KR20230104957A - Cathode unit for magnetron sputtering device and magnetron sputtering device - Google Patents

Abstract

Provision of a cathode unit (CU) for a magnetron sputtering device (SM) capable of increasing target use efficiency by making the eroded area of a target substantially uniform according to the progress of sputtering without causing local loss of plasma, etc. do. The center magnet 52 in which the magnet units 5 ₁ to 5 ₄ provided on the sputtered surfaces and the oriented side of the targets 4 ₁ to 4 ₄ disposed in the vacuum chamber 1 are linearly disposed, and the straight portion (53a, 53b) and a bridging portion 53c for bridging both free ends of the linear portions, respectively, and a peripheral magnet 53 surrounding the central magnet with the opposite polarity on the target side provided, the vertical component of the magnetic field A magnetic field Mf leaking from the sputtering surface is generated so that a line passing through this zero position extends along the longitudinal direction of the center magnet and is closed in a race track shape, and the center magnet maintains the attitude of the surrounding magnets. Both ends of the central magnet were shifted to different linear parts of the peripheral magnets according to the polarity of the target side of .

Description

Cathode unit for magnetron sputtering device and magnetron sputtering device

The present invention relates to a cathode unit for a magnetron device and a magnetron sputtering device for forming a predetermined thin film on a substrate to be processed by a magnetron sputtering method.

A magnetron sputtering apparatus is generally provided with a magnet unit on the side oriented to the sputtering surface of a target disposed on (opposite to) a processing target substrate in a vacuum chamber. And, when sputtering the sputter surface of the target by introducing a rare gas such as argon gas into a vacuum chamber in a vacuum atmosphere and applying a direct current voltage or an alternating current voltage having a negative potential to the target, electrons ionized from the front of the sputter surface and sputtering Secondary electrons generated by the plasma are captured to increase the electron density, and the plasma density is increased by increasing the probability of electrons colliding with rare gas molecules.

In the case of forming a film on a substrate to be processed (hereinafter referred to as a "substrate") having a rectangular outline such as a glass substrate, a target having an outline equivalent to that of the substrate is usually used. As the magnet unit at this time, a center magnet arranged linearly on one side of a rectangular support plate (yoke) installed in parallel to the target, a straight line part extending in parallel and at equal intervals on both sides of the center magnet, and both straight lines It is generally used to have a bridging portion that bridges both free ends of the portion, and to have peripheral magnets that surround the periphery of the central magnet by changing the polarity on the target side (hereinafter, the direction from the sputter surface to the substrate is the Z-axis direction upward, center The length direction of the magnet is the X-axis direction, and the width direction of the central magnet orthogonal to the X-axis direction is the Y-axis direction). As a result, the magnetic field leaking from the sputter surface acts so that the line passing through the position where the vertical component of the magnetic field becomes zero extends in the X-axis direction and closes in a race track shape, and the space between the sputter surface and the substrate (sputter surface In the upper space), plasma in the shape of a race track is generated. At this time, the electrons in the plasma are bent by the electromagnetic field at both ends of the magnet unit in the X-axis direction and change direction, clockwise or counterclockwise along the race track according to the upper magnetism of the central magnet and the peripheral magnets. It moves in a circumferential trajectory in the direction of

Here, it is known that when a predetermined thin film is formed on a substrate using the magnetron sputtering device, the distribution of the film thickness or film quality is deteriorated in a corner region of the substrate located on a diagonal line. This is because when the electrons in the plasma are bent by the electromagnetic field and change direction, inertial motion remains. Especially, at both ends of the magnet unit in the X-axis direction (ie, the corner of the race track), the plasma moves outside the Y-axis direction. It was thought to be due to the local spread to the side. For this reason, when reciprocating the magnet unit with a predetermined stroke length in the Y-axis direction in order to make the erosion area of the target uniform according to the progress of sputtering, considering the inertia motion of the electrons, the stroke length is set short. It is necessary to do this, but rather the non-erosion area becomes large and the efficiency of using the target deteriorates. Therefore, each straight line part of the center magnet and the peripheral magnet is moved at equal intervals, and one side of the straight part and both ends of the center magnet at both ends in the longitudinal direction of the magnet unit are moved to the side of the other straight part, so that the center magnet and each straight part It has been proposed to configure so that the interval of is narrower than that in the central region (for example, refer to Patent Document 1).

However, when forming a film on a large-area substrate such as a glass substrate used in the manufacture of a flat panel display, the target must be made long, so the length of the central magnet or the peripheral magnet of the magnet unit is also increased accordingly. In this case, when the sputter surface is sputtered while reciprocating the magnet unit in the Y-axis direction using the magnet unit of Patent Document 1, in a range of a predetermined length adjacent to both ends in the longitudinal direction of the magnet unit and facing inward, It has been found that there are cases where the plasma becomes unstable or disappears.

Therefore, the inventors of the present application focused on the trajectories and densities of electrons and secondary electrons (hereinafter referred to as "circling electrons") in the plasma that circled along the race track, and studied intensively, and found the following. That is, as an initial magnet unit, a conventional magnet unit having a linear portion extending in parallel and at equal intervals on both sides of the central magnet and a bridging portion respectively bridging both free ends of both straight portions, as in Patent Document 1, one side of the straight portion and A magnet unit in which both ends of the center magnet are moved to the side of the other straight portion so that the distance between the center magnet and each straight portion is narrower than in the central region is used as a correction magnet unit. In addition, among the race track-shaped plasma generated in the space between the sputtering surface and the substrate to be processed, the area near the central magnet is taken as the central area, and the area in the reverse direction is taken as the peripheral area. And, if the density distribution of the orbiting electrons in the plasma is simulated, in the initial magnet unit, the density of the orbiting electrons in the peripheral area before being bent by the electromagnetic field in the XY plane and changing direction is locally high, and in the peripheral area after changing the direction It was found that the density of the main rotor of was locally lowered. From this, when paying attention to the trajectory of the main rotor in the XZ plane, it was found that the main rotor was scattered toward the target substrate side (upward in the Z-axis direction) in the central region after the direction was changed.

In the correction magnet unit, there is not much difference in the density of the main rotors in the peripheral area before and after the direction change in the XY plane, and the scattering of the main rotors in the central area after the direction change in the XZ plane to the processing target substrate side is the initial magnet It was found to be more suppressed than the unit (ie, trapped in the stray field). On the other hand, after changing the direction in the XY plane, a range of predetermined lengths adjacent to both ends in the longitudinal direction of the magnet unit and directed inward (the distance between the central magnet and each straight line part is returned to be equal to that of the central area) In a range of a predetermined length starting from the position), it was confirmed that the density of the orbiting electrons in the peripheral area not only increased but also spread in the Y-axis direction. This is considered to cause local dissipation of plasma or the like when the magnet unit is reciprocally moved in the Y-axis direction at a predetermined stroke length. Therefore, if it is possible to suppress diffusion of main rotor electrons in the peripheral area after changing direction while suppressing scattering of main rotor electrons in the central area after changing direction to the processing target substrate side, during sputtering, almost symmetrically in the X-axis It has been found that it is possible to generate a race track shaped plasma with an electron density distribution.

Patent Document 1: Japanese Unexamined Patent Publication No. 2008-127601

The present invention has been made based on the above findings, and it is possible to make the erosion area of the target substantially uniform according to the progress of sputtering without causing local loss of plasma, etc., thereby increasing the efficiency of using the target. Its object is to provide a cathode unit and a magnetron sputtering device.

In order to solve the above problems, a cathode unit for a magnetron sputtering apparatus of the present invention includes a magnet unit installed on a side oriented to the sputtering surface of a target disposed in a vacuum chamber, and the magnet unit is a center magnet disposed linearly. and a linear portion extending parallel to and at equal intervals on both sides of the central magnet, and a bridging portion respectively bridging both free ends of both linear portions, and surrounding the central magnet, the polarity of which is reversed on the target side. , A magnetic field leaking from the sputtering surface is generated so that a line passing through the position where the vertical component of the magnetic field becomes zero extends along the longitudinal direction of the central magnet and closes in a race track shape, maintaining the posture of the peripheral magnets. , It is characterized in that both ends of the central magnet are shifted to different straight line portions of the peripheral magnets according to the polarity of the target side of the central magnet.

According to this, if the density distribution of the winding electrons in the plasma is simulated, not only scattering of the winding electrons in the central region after changing direction to the processing target substrate side is suppressed, but also the Y of the winding electrons in the peripheral region after changing direction is suppressed. Diffusion in the axial direction can also be suppressed. Accordingly, when the cathode unit of the present invention is assembled in a magnetron sputtering device and plasma is generated as described above, a race track-shaped plasma with an electron density distribution almost symmetrical to the X-axis over almost the entire length of the magnet unit. . In this case, the length of both ends of the center magnet to be shifted is appropriately set depending on the length of the magnet unit in the X-axis direction, the distance between the sputtering surface and the substrate to be processed, and the power supplied to the target during sputtering. For example, It is set at least twice the distance between the two straight lines. At this time, if a configuration is adopted in which both ends of the center magnet are shifted toward both ends of the center magnet so that the distance from the straight portion is gradually reduced, Density difference can be made smaller. In addition, contrary to the above, it is also conceivable to set the central magnet as fixed and shift both ends (and bridging parts) of both linear parts of the peripheral magnets in different directions relative to the central magnet, but in this way, after changing the direction The diffusion of main rotor electrons in the peripheral area cannot be suppressed.

In addition, in order to solve the above problems, a magnet unit disposed under the target with the sputter surface side of the target disposed facing the substrate to be processed in the vacuum chamber facing upward, a power supply for supplying power to the target, and a vacuum atmosphere In the magnetron sputtering apparatus according to the present invention, which is provided with gas introduction means for introducing inert gas into a vacuum chamber, the magnet units include a central magnet arranged linearly and straight portions extending parallelly and at equal intervals on both sides of the central magnet. and a bridging portion for bridging both free ends of both linear portions, and peripheral magnets surrounding the center magnet with the polarity on the target side reversed, and the longitudinal direction of the center magnet is orthogonal to the X-axis direction and the X-axis direction, A driving means is further provided for reciprocating the magnet unit in at least the Y-axis direction with a predetermined stroke length, with the Y-axis direction being the direction from the central magnet toward the linear portion of the peripheral magnets, and supplying an inert gas to a vacuum chamber in a vacuum atmosphere. When the plasma in the shape of a race track is generated in the space above the sputter surface by supplying power to the target, when the electrons in the plasma change direction at the corners of the race track by the electromagnetic field, the electrons are emitted upward. It is characterized by providing means for suppressing electron emission.

In the present invention, in a state in which the posture of the peripheral magnets is maintained, both end portions of the central magnet are shifted to different linear portions of the peripheral magnets according to the polarity of the target side of the central magnet to constitute an electron emission suppression means. can On the other hand, for example, a permanent magnet or an electromagnet is installed outside the vacuum chamber or at a location where sputtered particles are not scattered in the vacuum chamber to apply a magnetic field, and when changing direction, electrons that try to emit upward (to the substrate side to be processed) are originally emitted. It can also be made to trap in the trajectory of .

[Fig. 1] is a schematic partial sectional view of a magnetron sputtering device equipped with a cathode unit of this embodiment.
[Fig. 2] (a) is a plan view of the magnet unit used in the cathode unit of the present embodiment in which parts thereof are omitted; (b) is a diagram explaining the density distribution of orbiting electrons in the plasma in the XY plane; (c) is a diagram. It is a diagram explaining the density distribution of orbiting electrons in the plasma in the XZ plane.
[Fig. 3] (a) is a diagram explaining the density distribution of orbiting electrons in the plasma in the XY plane of a magnet unit of a conventional example, and (b) is a diagram explaining the density distribution of the orbiting electrons in the plasma in the XZ plane.
[Fig. 4] (a) is a diagram explaining density distribution of orbiting electrons in plasma in the XY plane of a magnet unit of another conventional example, and (b) is a diagram explaining density distribution of orbiting electrons in plasma in the XZ plane.

Hereinafter, with reference to the drawings, a target substrate is a large-area glass substrate (hereinafter referred to as 'substrate Sw') used in the manufacture of a flat panel display, and a plurality of targets having rectangular outlines in one direction are applied. Embodiments of a cathode unit for a magnetron sputtering device and a magnetron sputtering device according to the present invention will be described by taking a so-called multi-target type magnetron sputtering device installed side by side at intervals as an example. Hereinafter, terms indicating directions as above and below are based on FIG. 1, which is the installation posture of the magnetron sputtering device (SM), and the direction from the sputter surface of the target to the substrate Sw is upward in the Z-axis direction, which will be described later. The longitudinal direction of the center magnet to be used is the X-axis direction, and the width direction of the center magnet orthogonal to the X-axis direction is the Y-axis direction.

Referring to FIG. 1 , the magnetron sputtering device SM of the present embodiment includes a vacuum chamber 1 defining a film formation chamber 11 . An exhaust port 12 is openly installed on the wall of the vacuum chamber 1, and an exhaust pipe 13 from a vacuum exhaust unit Pu composed of a rotary pump, a dry pump, a turbo molecular pump, etc. is connected to the exhaust port 12. , It is possible to maintain a predetermined pressure (eg, 1Х10 ^-5 Pa) by evacuating the inside of the film formation chamber 11 . Gas supply ports 21a and 21b are further open on the wall surface of the vacuum chamber 1, and gas pipes 23a and 23b are provided with mass flow controllers 22a and 22b between the gas supply ports 21a and 21b. These are connected to each other, and a rare gas (inert gas) such as argon gas with a controlled flow rate and a reactive gas such as oxygen gas can be introduced into the film formation chamber 11 as necessary, and these gas introducing means of the present embodiment can be introduced. make up

In the upper space in the vacuum chamber 1, the substrate conveying means 3 is installed. The substrate transport means 3 includes a carrier 31 that holds the substrate Sw with its lower surface (film formation surface) open, and a drive source out of the drawing capable of transporting the carrier 31 in the Y-axis direction. In addition, since a known substrate transport means 3 can be used, detailed description is omitted here. Then, the cathode unit CU of the present embodiment is installed in the lower part of the vacuum chamber 1 so as to face the substrate Sw held by the carrier 31 transported to a predetermined position in the film formation chamber 11 . The cathode unit (CU) includes four targets 4 ₁ to 4 ₄ installed side by side at equal intervals in the Y-axis direction so that the upper surface (sputter surface) when not in use is located in the XY plane, and each target 4 ₁ to 4 ₄ ) is provided with magnet units 5 ₁ to 5 ₄ respectively disposed in the lower space (outside the vacuum chamber). Each of the targets 4 ₁ to 4 ₄ manufactured _according to the composition of the film to be formed on the lower surface of the substrate Sw has the same substantially rectangular parallelepiped shape and is installed side by side when facing the substrate Sw. The dimensions (length in the X-axis direction _and width in the Y-axis direction) of each of the targets 4 ₁ to 4 ₄ are set, respectively, so that the outline of -4 4 is much larger than that of the substrate Sw. On the lower surface of each target 4 ₁ to 4 ₄ , a backing plate 41 made of copper is bonded through a bonding material (not shown) such as indium, respectively, to secure each target 4 ₁ to 4 ₄ during sputtering. Each is installed on the bottom surface of the vacuum chamber 1 through the insulator 42 in a state that can be cooled. The targets 4 ₁ , 4 ₂ and 4 ₃ , 4 ₄ adjacent to each other are paired, respectively, and the output 61 from the AC power source 6 is connected to each pair of targets 4 ₁ to 4 ₄ , respectively. Then, AC power of a predetermined frequency (eg, 1 kHz to 100 kHz) can be injected between the target 4 ₁ , 4 ₂ and 4 ₃ , 4 ₄ forming a pair, respectively, by the AC power supply 6 . In addition, depending on the type of target, for example, DC power having a negative potential may be injected into each of the targets 4 ₁ to 4 ₄ .

Referring to FIG. 2, each of the magnet units 5 ₁ to 5 ₄ has the same shape, is installed in parallel to the backing plate 41, and includes a support plate 51 (yoke) composed of a flat plate made of magnetic material. provide At the center of the upper surface of the support plate 51, a center magnet 52 disposed linearly in the X-axis direction, straight portions 53a and 53b extending in parallel and at equal intervals on both sides of the center magnet 52, and both straight portions By changing the polarity on the target side (e.g., the center The magnet 52 has an S pole and the peripheral magnet 53 has a N pole). In this case, the central magnet 52 and the peripheral magnets 53 are integrally made of neodymium magnets or the like, or formed by installing magnet pieces of neodymium magnets or the like in a row, and the central magnet 52 and the peripheral magnets ( 53) is designed to have the same volume when converted to the same magnetization. Thereby, in the space in the film formation chamber 11 between the upper surface (sputter surface) of each target 4 ₁ to 4 ₄ and the lower surface of the substrate Sw, a line passing through the position where the vertical component of the magnetic field becomes zero is drawn. A magnetic field Mf leaking from the sputter surface extending in the X-axis direction and closed in a race track shape is generated, respectively. In addition, nut members 54 protrude and are installed on the lower surface of the support plate 51 of each magnet unit 5 ₁ to 5 ₄ , and each nut member 54 has a feed screw Fs connected to the motor Mt. By being screwed together, each of the magnet units 5 ₁ to 5 ₄ can be reciprocally moved in the Y-axis direction at a predetermined stroke length during sputtering, and these constitute the driving means of this embodiment. In addition, each magnet unit 5 ₁ to 5 ₄ may be reciprocally moved in the X-axis direction at a predetermined stroke length.

In the case of forming a film on the lower surface of the substrate Sw using the magnetron sputtering device SM, a predetermined position in the film formation chamber 11 facing each target 4 ₁ to 4 ₄ by the substrate transport means 3 The furnace substrate Sw is conveyed, and the film formation chamber 11 is evacuated to a predetermined pressure. When the film formation chamber 11 reaches a predetermined pressure, a rare gas (reactive gas if necessary) is introduced while the flow rate is controlled by the mass flow controllers 22a and 22b, and the AC power supply 6 controls each pair of targets. AC power is supplied between (4 ₁ ~ 4 ₄ ). Then, a race track-shaped plasma (PL) is generated above the sputter surface of each of the targets 4 ₁ to 4 ₄ . At this time, the electrons in the plasma (PL) are bent by the electromagnetic field at both ends of the X-axis direction of each magnet unit (5 ₁ to 5 ₄ ) and change direction, while the upper side of the central magnet 52 and the peripheral magnet 53 Depending on the magnetism, it moves in a clockwise or counterclockwise circling orbit along the race track. Then, the sputter surface is sputtered by ions of the rare gas ionized by the plasma PL, and sputter particles scattered from the sputter surface adhere to the lower surface of the substrate Sw according to a predetermined cosine law, and are deposited to form a film. At this time, by integrally reciprocating the magnet units 5 ₁ to 5 ₄ in the Y-axis direction at a predetermined stroke length, the respective targets 4 ₁ to 4 ₄ are eroded substantially equally in the Y-axis direction.

Here, as shown in FIG. 3(a), straight portions 530a and 530b extending at equal intervals and parallel to both sides of the center magnet 520 provided on the support plate 510 and both straight portions 530a and 530b An existing magnet unit having a bridging portion 530c bridging both free ends, respectively, is used as an initial magnet unit Mu1. Further, as shown in Fig. 4(a), the straight portions 531a, 531b extending at equal intervals and parallel to both sides of the center magnet 521 provided on the supporting plate 511 and the amount of both straight portions 531a, 531b Based on the magnet unit having the bridge portion 531c for bridging the free ends, as in Patent Document 1, one side of the straight portion 531a and both ends of the central magnet 521 are connected to the other straight portion 531b. ) side so that the distance between the center magnet 521 and each of the linear portions 531a and 531b is narrower than that in the central area, is used as a correction magnet unit Mu2. 1, the region near the central magnet 521 of the race track-shaped plasma PL generated in the space between the sputter surface and the substrate Sw is referred to as the central region Pc, as shown by the dotted line in FIG. Let the area be the peripheral area (Pp1, Pp2). Then, if the trajectory and density distribution of the orbiting electrons in the plasma PL are simulated, in the initial magnet unit Mu1, in the XY plane as shown in Figs. 3 (a) and (b) (amount of the initial magnet unit Mu1) At the end), the density of the main rotor electrons in the peripheral region Pp1 before being bent by the electromagnetic field and changing direction is locally high, while the density of the main rotor electrons in the peripheral region Pp2 after changing direction is locally low. Also, when looking at the trajectory of the main rotor in the XZ plane, the main rotor is scattered upward in the Z-axis direction in the central region Pc after changing direction. In addition, in Figs. 2 to 4, the orbit of the orbit of the orbit is shown by a thin curve, and the density of the orbit of the orbit is indicated by shading.

In the correction magnet unit Mu2, as shown in Figs. 4(a) and (b), there is not much difference in the density of the orbiting electrons in the peripheral regions Pp1 and Pp2 before and after the direction change in the XY plane, and the direction in the XZ plane The scattering of the main rotor toward the substrate Sw side in the central region Pc after changing is suppressed more than in the initial magnet unit Mu1 (in other words, it is trapped in the leakage magnetic field Mf). On the other hand, after changing the direction, each adjacent to both ends in the longitudinal direction and facing the inside of a predetermined length range Lp (the distance between the central magnet 521 and each straight line portion 531a, 531b is equal to that of the central area In a range of a predetermined length starting from the returned position), the density of main rotors in the peripheral region Pp2 increases and spreads in the Y-axis direction. For this reason, when the correction magnet unit Mu2 is reciprocally moved in the Y-axis direction at a predetermined stroke length, it is considered that plasma is locally dissipated or the like.

In each of the magnet units 5 ₁ to 5 ₄ of the present embodiment, as shown in Fig. 2(a), in a state in which the posture of the peripheral magnet 53 is maintained, according to the polarity of the center magnet 52 on the target side ( That is, in accordance with the direction in which the electrons rotate), a configuration is employed in which the opposite end portions 52a and 52b of the central magnet 52 are shifted to the different linear portions 53a and 53b of the peripheral magnet 53, respectively. In this case, the length L1 of both ends 52a and 52b of the shifted center magnet 52 is the length of the magnet units 5 ₁ to 5 ₄ in the X-axis direction, and the distance between the sputtering surface and the substrate Sw. However, it is appropriately set according to the power supplied to the targets 4 ₁ to 4 ₄ during sputtering, and is set to, for example, more than twice the distance L2 between the two linear portions 53a and 53b. At this time, the both end portions 52a and 52b of the center magnet 52 may be shifted so that the distance between them and the linear portions 53a and 53b gradually decreases (stepwise) toward the end of the center magnet. On the other hand, the both end portions 52a and 52b of the center magnet 52 may be shifted so that the distance between the straight portions 53a and 53b continuously decreases as they move toward the end of the center magnet (for example, the center magnet 52 Both end portions 52a and 52b of ) are installed inclined with respect to the X-axis direction).

When the trajectory and density distribution of the orbiting electrons in the plasma PL are simulated using the magnet units 5 ₁ to 5 ₄ of the present embodiment, as shown in FIGS. 2(b) and (c), the directions in the XY plane are obtained. There is not much difference in the density of the main rotors in the peripheral regions Pp1 and Pp2 before and after switching, and the scattering of the main rotors with respect to the substrate Sw side in the central region Pc after the orientation in the XZ plane is changed, and the correction magnet It was confirmed that the unit Mu2 is more suppressed (that is, trapped in the leakage magnetic field Mf). Even after changing the direction, it was confirmed that the density of the orbiting electrons in the peripheral region Pp2 did not spread in the Y-axis direction on a par with other positions. Through this, the configuration of shifting both end portions 52a and 52b of the central magnet 52 to the different linear portions 53a and 53b of the peripheral magnet 53, respectively, suppresses the circulating electrons from being emitted upward. It can be seen that it is a divergence suppression means.

According to this embodiment, it is possible to form race track-shaped plasma PL with electron density distribution almost symmetrical to the X-axis over almost the entire length of the magnet units 5 ₁ to 5 ₄ . Therefore, when a predetermined thin film is formed on the substrate Sw using the magnetron sputtering device SM equipped with the magnet units 5 ₁ to 5 ₄ , the film can be formed so that the film thickness or film quality is well distributed over the entire surface. Also, since the reciprocating stroke length of the Y-axis direction by the driving means (Mt, Fs) can be set long, the utilization efficiency of each target (4 ₁ to 4 ₄ ) can be improved. In addition, although not separately illustrated and described, contrary to the above, the central magnet 52 is fixed, and both ends of both linear portions 53a and 53b of the peripheral magnet 53 (and It is also conceivable to shift the cross-linking portion) in different directions, but it has been confirmed that in this way, diffusion of main rotor electrons in the peripheral area after the direction is changed cannot be suppressed.

In the above, although the embodiment of the present invention has been described, various modifications are possible without departing from the scope of the technical idea of the present invention. In the above embodiment, the electron emission suppression means is configured by shifting the opposite end portions 52a and 52b of the central magnet 52 to the different linear portions 53a and 53b of the peripheral magnet 53, respectively. It is not limited to this, as long as it can suppress scattering of the main rotor electrons to the substrate Sw side in the central region Pc after the direction is changed. Although not separately illustrated and described, for example, a permanent magnet or an electromagnet is installed outside the vacuum chamber 1 or at a location where sputter particles are not scattered in the vacuum chamber 1 to apply a magnetic field to the upper side when changing the direction (processing target) substrate side) may be made to trap electrons to be emitted to the original orbit.

In the above embodiment, a so-called multi-target type magnetron sputtering device (SM) in which a plurality of targets 4 ₁ to 4 ₄ are arranged side by side at equal intervals has been described as an example, but is not limited thereto. The present invention can also be applied to a magnetron sputtering device in which a single magnet unit is disposed on one target or a so-called multi-magnet type magnetron sputtering device in which a plurality of magnet units are installed side by side at equal intervals on one target.

SM… Magnetron Sputtering Device
CU… cathode unit
One… vacuum chamber
21a, 21b... Gas inlet (component of gas introduction means)
22a, 22b... … Mass flow controller (component of gas introduction means)
23a, 23b... … Gas pipe (component of gas introduction means)
4 ₁ to 4 ₄ … target
5 ₁ to 5 ₄ … magnet unit
52... central magnet
52a, 52b... Both ends of the center magnet 52 (electron emission suppression means)
53... magnet around
53a, 53b... straight part
53c... bridge
Mf... magnetic field
6... AC power (power supply)
Mt... motor (component of driving means)
Fs... feed screw (component of drive means)
54... Nut member (component of driving means)

Claims (4)

Equipped with a magnet unit installed on a side oriented to the sputtering surface of a target disposed in a vacuum chamber, and the magnet unit is arranged in parallel with a central magnet arranged linearly at equal intervals and on both sides of the central magnet. Peripheral magnets having a bridging portion bridging both free ends of the extending straight portion and both straight portions, respectively, and surrounding the center magnet, having different polarities on the target side, are provided, and the vertical component of the magnetic field is zero. In a cathode unit for a magnetron sputtering device that generates a magnetic field leaking from the sputter surface so that a line passing through the position extends along the longitudinal direction of the central magnet and is closed in a race track shape,
Cathode for a magnetron sputtering device, characterized in that both ends of the central magnet are shifted to different linear portions of the peripheral magnet according to the polarity of the target side of the central magnet while maintaining the posture of the peripheral magnet. unit. The method of claim 1,
The cathode unit for a magnetron sputtering apparatus, characterized in that the both ends of the central magnet are shifted so that the distance from the straight part becomes gradually smaller as it goes toward both ends of the central magnet. A magnet unit disposed under the target with the sputter surface side facing up in the vacuum chamber facing the substrate to be processed, a power source for supplying power to the target, and an inert gas supplied to the vacuum chamber in a vacuum atmosphere. In a magnetron sputtering device having a gas introducing means for introducing,
The magnet unit has a center magnet arranged linearly, a straight portion extending at equal intervals and parallel to both sides of the center magnet, and a bridging portion bridging both free ends of both straight portions, respectively, and surrounds the center magnet. Peripheral magnets are provided with different polarities on the target side, the longitudinal direction of the center magnet is the X-axis direction, and the width direction of the center magnet orthogonal to the X-axis direction is the Y-axis direction, and the magnet unit is moved along a predetermined stroke In the case where a driving means for reciprocating at least in the Y-axis direction is installed in the length,
By introducing an inert gas into the vacuum chamber under a vacuum atmosphere and supplying power to the target, when a race track-shaped plasma is generated in the space above the sputter surface, electrons in the plasma are generated at the corners of the race track by an electromagnetic field. A magnetron sputtering apparatus characterized by providing an electron emission suppression means for suppressing the emission of the electrons upward when changing direction. The method of claim 3,
In a state in which the attitude of the peripheral magnets is maintained, the electron emission suppression means is configured by shifting both ends of the central magnet to different linear portions of the peripheral magnets according to the polarity of the target side of the central magnet. , a magnetron sputtering device.

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