KR20230099302A - Polishing slurry composiotion - Google Patents

Abstract

The present invention relates to a polishing slurry composition. The polishing slurry composition according to an embodiment of the present invention includes a polishing liquid containing abrasive particles and an oxide film booster containing an alkyl glucoside represented by the structure of chemical formula 1. In the chemical formula 1, m is an integer from 0 to 10, and R3 is a linear or branched C8 to C18 alkyl group.

Description

Polishing slurry composition {POLISHING SLURRY COMPOSIOTION}

The present invention relates to an abrasive slurry composition.

A chemical mechanical polishing (CMP) process is used as a planarization technique for removing steps in a specific film formed on a substrate in manufacturing semiconductor devices. For example, it is used in a process for removing an excessively formed interlayer dielectric (ILD) or in a process for planarization of an insulating film for shallow trench isolation (STI).

The CMP process is performed by putting a slurry containing abrasive particles on a substrate and using a polishing pad mounted on a polishing device. The abrasive particles included in the slurry receive pressure from the polishing device to mechanically polish the surface, The chemical component included in the slurry composition chemically reacts with the surface of the substrate to chemically remove the surface of the substrate.

In such a CMP process, the polishing rate, the flatness of the polishing surface, and the degree of occurrence of scratches and dishing are important factors to be considered, and they are determined by the CMP process conditions, the type of slurry, the type of polishing pad, and the like.

In particular, as semiconductor devices are highly integrated and patterns on the semiconductor surface become more complex, the impact of the level difference, scratches, and dishing on the performance of the device is increasing. There is an increasing need to develop abrasive slurries that can be controlled.

On the other hand, in the case of currently commercialized CMP slurries, anionic polymers are used as additives. In the case of such slurries, not only the polishing speed is remarkably low, but also the level of defects such as flaws and scratches after polishing is high, and the level of dishing due to over polishing is high. there is

Accordingly, it is necessary to develop an abrasive capable of controlling the polishing selectivity of a silicon oxide film and a silicon nitride film while improving the oxide film polishing rate.

The above background art is possessed or acquired by the inventor in the process of deriving the disclosure of the present application, and cannot necessarily be said to be known art disclosed to the general public prior to the present application.

The present invention is to solve the above problems, and an object of the present invention is to provide a polishing slurry composition capable of increasing the polishing rate for a silicon oxide film.

However, the problem to be solved by the present invention is not limited to those mentioned above, and other problems not mentioned will be clearly understood by those skilled in the art from the description below.

The polishing slurry composition according to an embodiment of the present invention includes:

[Formula 1]

(In Formula 1, m is an integer from 0 to 10, R3 is a linear or branched C8-C18 alkyl group).

In one embodiment, the alkyl polyglucoside is Lauryl Glucoside, Coco-Glucoside, Decyl Glucoside, Caprylyl/Capryl Glucoside , Caprylyl Glucoside, C8-C10 alkyl polyglucoside, and C12-C16 alkyl polyglucoside may include at least one selected from the group consisting of.

In one embodiment, the alkyl polyglucoside is AG6206 ^® (Lion Specialty Chemicals Co., Ltd.), SIMULSOL SL4 ^® (SEPPIC), TRITON CG-110 ^® (Sigma-Aldrich), Plantapon ^® (BASF g), Plantacare ^® (Company BASF), Mazon ^® (Company BASF), Atplus ^® (Company Croda), Agnique PG 8107 ^® , Agnique ^{Glucopon 425} N (CAS 110615-47-9 and 68515-73-1 by BASF) (sold in some markets as GLUCOPON 425 N/HH by BASF), Glucopon 600 UP (CAS 110615-47-9) (as GLUCOPON 600 CSUP Sold in some markets, BASF) and Glucopon 650 EC (BASF) may include at least one selected from the group consisting of.

In one embodiment, the alkyl polyglucoside may be 0.01% to 5% by weight of the polishing slurry composition.

In one embodiment, the abrasive particles include at least one selected from the group consisting of a metal oxide, a metal oxide coated with an organic or inorganic material, and the metal oxide in a colloidal state, and the metal oxide is silica. , ceria, zirconia, alumina, titania, barium titania, germania, mangania, and may include at least one selected from the group consisting of magnesia.

In one embodiment, the abrasive particles may be produced by a solid phase method or a liquid phase method.

In one embodiment, the abrasive particles may include primary particles having a particle size of 5 nm to 150 nm and secondary particles having a particle size of 30 nm to 300 nm.

In one embodiment, the abrasive particles may be 0.1% to 10% by weight of the polishing slurry composition.

In one embodiment, the polishing liquid further includes at least one dispersant selected from the group consisting of an ammonium salt dispersant and a polymer dispersant, and the polymer dispersant is polyacrylic acid, polysulfonic acid, polyacrylic acid ammonium salt, polymethacrylic acid , Polyammonium methacrylate, polyacrylic maleic acid, acrylic styrene copolymer, polystyrene-co-acrylic acid (PAA-PS), polyacrylamide/acrylic acid copolymer, polyacrylic acid/sulfonic acid copolymer, It includes at least one selected from the group consisting of polysulfonic acid/acrylamide copolymer and polyacrylic acid/malonic acid copolymer, and the ammonium salt dispersant is ammonium polyacrylate, ammonium polymethacrylate, ammonium nitrate, and ammonium phosphate. , It may include at least one selected from the group consisting of ammonium acetate, ammonium chloride, ammonium sulfate, ammonium formate, ammonium carbonate and ammonium citrate.

In one embodiment, the dispersant may be 0.1% to 5% by weight of the polishing slurry composition.

In one embodiment, the polishing slurry composition further comprises an additive solution containing a pH adjusting agent, wherein the pH adjusting agent is nitric acid, hydrochloric acid, phosphoric acid, sulfuric acid, hydrofluoric acid, hydrobromic acid, iodic acid, formic acid, malonic acid , maleic acid, oxalic acid, acetic acid, adipic acid, citric acid, adipic acid, acetic acid, propionic acid, fumaric acid, lactic acid, salicylic acid, pimelic acid, benzoic acid, succinic acid, phthalic acid, butyric acid, glutaric acid, glutamic acid, glycolic acid, lactic acid, an acidic substance containing at least one selected from the group consisting of aspartic acid, tartaric acid, and salts thereof; and selected from the group consisting of ammonia, 2-amino-2-methyl-1-propanol, tetramethylammonium hydroxide, potassium hydroxide, sodium hydroxide, magnesium hydroxide, rubidium hydroxide, cesium hydroxide, sodium hydrogen carbonate, sodium carbonate and imidazole. It may include at least one selected from the group consisting of;

In one embodiment, the polishing slurry composition further includes an additive solution containing a dishing inhibitor containing an anionic polymer, wherein the anionic polymer is polyacrylic acid, polyacrylic acid, ammonium salt, polymethacrylic acid, poly Ammonium methacrylate, polyacrylic maleic acid, polystyrene-co-acrylic acid (PAA-PS), polyacrylamide/acrylic acid copolymer, polyacrylic acid/sulfonic acid copolymer, polysulfonic acid/acrylamide copolymer , It may include at least one selected from the group consisting of polyacrylic acid/malonic acid copolymers.

In one embodiment, the dishing inhibitor may be 0.1% to 5% by weight of the polishing slurry composition.

In one embodiment, the polishing slurry composition may have a pH of 7 to 8.

In one embodiment, when polishing a wafer using the polishing slurry composition, a polishing rate of a non-patterned wafer (NPW) oxide film may be 7,000 Å/min or more.

The polishing slurry composition according to an embodiment of the present invention can increase the polishing rate of the silicon oxide film according to the control of the addition amount of the oxide film booster.

Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. However, since various changes can be made to the embodiments, the scope of the patent application is not limited or limited by these embodiments. It should be understood that all changes, equivalents or substitutes to the embodiments are included within the scope of rights.

Terms used in the examples are used only for descriptive purposes and should not be construed as limiting. Singular expressions include plural expressions unless the context clearly dictates otherwise. In this specification, terms such as "include" or "have" are intended to designate that there is a feature, number, step, operation, component, part, or combination thereof described in the specification, but one or more other features It should be understood that the presence or addition of numbers, steps, operations, components, parts, or combinations thereof is not precluded.

Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by a person of ordinary skill in the art to which the embodiment belongs. Terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with the meaning in the context of the related art, and unless explicitly defined in the present application, they should not be interpreted in an ideal or excessively formal meaning. don't

In addition, in the description with reference to the accompanying drawings, the same reference numerals are given to the same components regardless of reference numerals, and overlapping descriptions thereof will be omitted. In describing the embodiment, if it is determined that a detailed description of a related known technology may unnecessarily obscure the gist of the embodiment, the detailed description will be omitted.

In addition, in describing the components of the embodiment, terms such as first, second, A, B, (a), and (b) may be used. These terms are only used to distinguish the component from other components, and the nature, order, or order of the corresponding component is not limited by the term.

Components included in one embodiment and components having common functions will be described using the same names in other embodiments. Unless stated to the contrary, descriptions described in one embodiment may be applied to other embodiments, and detailed descriptions will be omitted to the extent of overlap.

Hereinafter, the polishing slurry composition of the present invention will be described in detail with reference to Examples and drawings. However, the present invention is not limited to these examples and drawings.

The polishing slurry composition according to an embodiment of the present invention includes:

[Formula 1]

(In Formula 1, m is an integer from 0 to 10, R3 is a linear or branched C8-C18 alkyl group).

In Formula 1, m is 0 to 10; 1 to 10; 3 to 10; 5 to 10; 7 to 10; 0 to 7; 1 to 7; 3 to 7; 5 to 7; 0 to 5; 1 to 5; 3 to 5; 0 to 3; or 1 to 3; it may be.

In one embodiment of the present invention, the polishing slurry composition further comprises at least one additive selected from the group consisting of amino acids, organic acids, polyhydric alcohol derivatives, amine compounds, nonionic polymers, water-soluble polymers, and pH adjusting agents. may include

The additive solution refers to a material added to the polishing slurry composition other than water to adjust the polishing properties such as polishing speed and polishing selectivity, the dispersibility of the abrasive particles, and the storage stability of the abrasive particles.

The polishing slurry composition according to an embodiment of the present invention can increase the polishing rate of the silicon oxide film according to the control of the addition amount of the oxide film booster.

In one embodiment, when the oxide film booster is added to the polishing liquid, it contacts the abrasive grains through hydrolysis, and then reacts between the abrasive grains and the surface of the silicon oxide film to promote the contact frequency of the abrasive grains.

In one embodiment, an alkyl polyglucoside is a glucose ether in which an anomeric alcohol group is replaced by an alkyl group. In one embodiment, the alkyl chain has a length ranging from about 8 to about 18 carbon atoms (or 8-11 carbon atoms, or 9-12 carbon atoms, or 10-11 carbon atoms). For example, alkyl chain length is characterized by average carbon chain length. Thus, in one embodiment, the average alkyl chain length ranges from about 8.9 to about 12.8. In one embodiment, the degree of polymerization ("DP") of the alkyl polyglucoside ranges from about 1 to about 2. In one embodiment, DP ranges from about 1.5 to about 1.8.

In one embodiment, the alkyl polyglucoside is Lauryl Glucoside, Coco-Glucoside, Decyl Glucoside, Caprylyl/Capryl Glucoside , Caprylyl Glucoside, C8-C10 alkyl polyglucoside, and C12-C16 alkyl polyglucoside may include at least one selected from the group consisting of.

In one embodiment, the alkyl polyglucoside is commercially available as a product.

In one embodiment, the alkyl polyglucoside is AG6206 ^® (Lion Specialty Chemicals Co., Ltd.), SIMULSOL SL4 ^® (SEPPIC), TRITON CG-110 ^® (Sigma-Aldrich), Plantapon ^® (BASF g), Plantacare ^® (Company BASF), Mazon ^® (Company BASF), Atplus ^® (Company Croda), Agnique PG 8107 ^® , Agnique ^{Glucopon 425} N (CAS 110615-47-9 and 68515-73-1 by BASF) (sold in some markets as GLUCOPON 425 N/HH by BASF), Glucopon 600 UP (CAS 110615-47-9) (as GLUCOPON 600 CSUP Sold in some markets, BASF) and Glucopon 650 EC (BASF) may include at least one selected from the group consisting of.

In one embodiment, the alkyl polyglucoside may be 0.01% to 5% by weight of the polishing slurry composition. When the alkyl polyglucoside is less than 0.01% by weight in the polishing slurry composition, the increase in the silicon oxide film polishing rate is insignificant, and when it is greater than 5% by weight, the polishing selectivity may not be realized and wafer surface defects may increase.

In one embodiment, the abrasive particles include at least one selected from the group consisting of a metal oxide, a metal oxide coated with an organic or inorganic material, and the metal oxide in a colloidal state, and the metal oxide is silica. , ceria, zirconia, alumina, titania, barium titania, germania, mangania, and may include at least one selected from the group consisting of magnesia.

In one embodiment, the abrasive particles may be produced by a solid phase method or a liquid phase method.

Preferably, the abrasive particles may be solid ceria or negatively charged colloidal ceria.

In one embodiment, the solid phase method may be prepared by calcining the abrasive particle precursor at a temperature of 400 ° C to 1,000 ° C.

In one embodiment, the abrasive particles may include those produced by a liquid phase method. The liquid phase method is a sol-gel method in which abrasive particle precursors undergo a chemical reaction in an aqueous solution to grow crystals to obtain microparticles, a coprecipitation method in which abrasive particle ions are precipitated in an aqueous solution, and abrasive particles are formed under high temperature and high pressure. It can be prepared by applying a hydrothermal synthesis method, etc. The abrasive particles produced by the liquid phase method are dispersed so that the surface of the abrasive particles has a positive charge.

In one embodiment, the abrasive particles may be monocrystalline. When monocrystalline abrasive particles are used, a scratch reduction effect can be achieved compared to polycrystalline abrasive particles, dishing can be improved, and cleaning properties after polishing can be improved.

In one embodiment, the shape of the abrasive particles may include at least one selected from the group consisting of spherical, prismatic, needle-shaped and plate-shaped, preferably spherical it could be

In one embodiment, the abrasive particles, particle diameter 5 nm to 150 nm; 10 nm to 150 nm; 30 nm to 150 nm; 50 nm to 150 nm; 100 nm to 150 nm; 5 nm to 130 nm; 10 nm to 130 nm; 30 nm to 130 nm; 50 nm to 130 nm; 100 nm to 130 nm; 5 nm to 100 nm; 10 nm to 100 nm; 30 nm to 100 nm; 50 nm to 100 nm; 5 nm to 50 nm; or primary particles of 10 nm to 30 nm; 30 nm to 300 nm; 30 nm to 200 nm; 30 nm to 100 nm; 50 nm to 300 nm; 50 nm to 200 nm; 50 nm to 100 nm; 100 nm to 300 nm; or 200 nm to 300 nm; may include secondary particles.

For example, the measurement of the average particle diameter of the abrasive grains is an average value of the particle diameters of a plurality of grains within a field of view that can be measured by scanning electron microscopy or dynamic light scattering.

In one embodiment, the size of the primary particles must be 150 nm or less to ensure particle uniformity, and if the size is less than 5 nm, the polishing rate may be reduced, and the secondary of the polishing slurry composition for the STI process Regarding the size of the particles, if the size of the secondary particles is less than 30 nm, excessive generation of small particles due to milling leads to deterioration in detergency, excessive defects on the wafer surface, and excessive polishing if the size exceeds 300 nm This makes it difficult to control the selectivity, and dishing, erosion, and surface defects may occur.

According to one aspect, the abrasive particles may use mixed particles having a multi-dispersion type of particle distribution in addition to single-sized particles, for example, a mixture of two types of abrasive particles having different average particle sizes. It may have a bimodal particle distribution or have a particle size distribution showing three peaks by mixing abrasive particles having three different average particle sizes. Alternatively, four or more types of abrasive particles having different average particle sizes may be mixed to form a polydisperse particle distribution. By mixing relatively large abrasive particles and relatively small abrasive particles, it has better dispersibility and an effect of reducing scratches on the wafer surface can be expected.

In one embodiment, the abrasive particles, 0.1% to 10% by weight of the polishing slurry composition; 0.5% to 10% by weight; 0.5% to 10% by weight; 0.5% to 10% by weight; 1% to 10% by weight; 3% to 10% by weight; 5% to 10% by weight; Or 7% by weight to 10% by weight; it may be. If the abrasive particles are less than 0.1% by weight of the polishing slurry composition, the polishing rate is lowered, and if it is greater than 10% by weight, there may be a problem in that defects caused by the abrasive particles are concerned.

In one embodiment, the polishing liquid may further include at least one dispersant selected from the group consisting of an ammonium salt dispersant and a polymer dispersant.

In one embodiment, the dispersant can increase the oxide film polishing rate by increasing the conductivity of the polishing slurry composition by increasing the number of ions involved in polishing.

In one embodiment, the polymer dispersant is polyacrylic acid, polysulfonic acid, polyammonium acrylate, polymethacrylic acid, polyammonium methacrylate, polyacrylic maleic acid, acrylic styrene copolymer, polystyrene/acrylic acid copolymer (polystyrene- at least one selected from the group consisting of co-acrylic acid; PAA-PS), polyacrylamide/acrylic acid copolymer, polyacrylic acid/sulfonic acid copolymer, polysulfonic acid/acrylamide copolymer, and polyacrylic acid/malonic acid copolymer may include

In one embodiment, the ammonium salt dispersant is ammonium polyacrylate, ammonium polymethacrylate, ammonium nitrate, ammonium phosphate, ammonium acetate, ammonium chloride, ammonium sulfate, ammonium formate, ammonium carbonate and ammonium citrate. It may include at least one selected from the group consisting of. However, it is not limited thereto, and any salt of an ammonium-based compound may be used without limitation.

In one embodiment, the dispersant may be 0.1% to 5% by weight of the polishing slurry composition. When the dispersant is less than 0.1% by weight in the polishing slurry composition, the action of adsorbing to the polishing surface is small, resulting in a decrease in the polishing rate, and when it is greater than 5% by weight, dispersion stability is reduced due to the input of an excessive amount of the dispersant, resulting in aggregation. As a result, micro defects and scratches occur.

In one embodiment, the polishing slurry composition may further include an additive solution including a pH adjusting agent.

In one embodiment, the pH adjusting agent is nitric acid, hydrochloric acid, phosphoric acid, sulfuric acid, hydrofluoric acid, hydrobromic acid, iodic acid, formic acid, malonic acid, maleic acid, oxalic acid, acetic acid, adipic acid, citric acid, adipic acid, acetic acid, An acid comprising at least one selected from the group consisting of propionic acid, fumaric acid, lactic acid, salicylic acid, pimelic acid, benzoic acid, succinic acid, phthalic acid, butyric acid, glutaric acid, glutamic acid, glycolic acid, lactic acid, aspartic acid, tartaric acid, and salts thereof matter; and selected from the group consisting of ammonia, 2-amino-2-methyl-1-propanol, tetramethylammonium hydroxide, potassium hydroxide, sodium hydroxide, magnesium hydroxide, rubidium hydroxide, cesium hydroxide, sodium hydrogen carbonate, sodium carbonate and imidazole. It may include at least one selected from the group consisting of;

In one embodiment, the polishing slurry composition may be neutral.

In one embodiment, the polishing slurry composition may have a pH of 7 to 8.

In one embodiment, the polishing slurry composition may further include an additive solution including a dishing inhibitor including an anionic polymer.

In one embodiment, the anionic polymer is polyacrylic acid, polyacrylic acid ammonium salt, polymethacrylic acid, polyammonium methacrylate salt, polyacrylic maleic acid, polystyrene/acrylic acid copolymer (polystyrene-co-acrylic acid; PAA- PS), polyacrylamide/acrylic acid copolymer, polyacrylic acid/sulfonic acid copolymer, polysulfonic acid/acrylamide copolymer, and polyacrylic acid/malonic acid copolymer.

According to one embodiment, when the anionic polymer is a copolymer, it is a polystyrene/acrylic acid copolymer, and the polystyrene ratio in the polystyrene/acrylic acid copolymer is 20% to 30%; 20% to 28%; 20% to 26%; 20% to 24%; or 20% to 22%; it may be. Preferably, the ratio of the polystyrene in the polystyrene/acrylic acid copolymer may be 30%. When the polystyrene ratio is low, dishing may be deteriorated.

In one embodiment, the dishing inhibitor is 0.1% to 5% by weight of the polishing slurry composition; 0.1% to 4% by weight; 0.1% to 3% by weight; 0.1% to 2% by weight; 0.1 wt % to 1 wt %; 0.1% to 0.5% by weight; 1% to 5% by weight; 1% to 3% by weight; 1% to 2% by weight; 3% to 5% by weight; Or 3% by weight to 4% by weight; it may be. When the dishing inhibitor is less than 0.1% by weight in the polishing slurry composition for improving dishing, the polishing selectivity is lowered, and when it is greater than 5% by weight, the polishing rate of the oxide film is lowered, and agglomeration of the abrasive particles of the polishing slurry is caused to improve dispersion stability It is lowered.

In one embodiment, the polishing slurry composition may include a concentration preparation and dilution process in the manufacturing process. According to one side, the polishing slurry composition for improving dishing further includes water, and the ratio of the polishing liquid:water:additive may be 1:3 to 10:1 to 8. The water may include, for example, deionized water, ion-exchanged water, and ultrapure water.

In one embodiment, it may be provided in a two-component form in which the polishing liquid and the additive solution are separately prepared and mixed immediately before polishing, or may be provided in a one-component form in which the polishing liquid and the additive solution are mixed.

In one embodiment, when polishing a wafer using the polishing slurry composition, a polishing rate of a Non Patterned Wafer (NPW) oxide film may be 7,000 Å/min or more. The oxide film booster according to an embodiment of the present invention is added to the polishing liquid When added, the polishing rate of the oxide film is increased by promoting contact between the abrasive particles and the wafer surface, and thus a high polishing rate of 7,000 Å/min or more can be realized.

Hereinafter, the present invention will be described in more detail by examples and comparative examples.

However, the following examples are only for illustrating the present invention, and the content of the present invention is not limited to the following examples.

[Example]

Example 1

An abrasive solution was prepared by mixing ceria abrasive particles, a polystyrene/acrylic acid copolymer dispersant, and 1.0% by weight of Glucopon of Formula 2 as an oxide film booster in ultrapure water.

[Formula 2]

Example 2

A polishing slurry composition was prepared in the same manner as in Example 1, except that 2.0% by weight of Glucopon was added in Example 1.

Example 3

A polishing slurry composition was prepared in the same manner as in Example 1, except that 3.0% by weight of Glucopon was added in Example 1.

Example 4

A polishing slurry composition was prepared in the same manner as in Example 1, except that 4.0% by weight of Glucopon was added in Example 1.

Example 5

A polishing slurry composition was prepared in the same manner as in Example 1, except that 5.0% by weight of Glucopon was added in Example 1.

Comparative Example 1

A polishing slurry composition was prepared in the same manner as in Example 1, except that Glucopon was not added in Example 1.

Non-pattern wafers (NPW) were polished using the polishing slurry compositions prepared in Examples 1 to 5 and Comparative Example 1 under the following polishing conditions.

[Polishing conditions]

1. Grinding machine: SP-01 (KCTech)

2. Pad: IC1000 (DOW Company) 3. Polishing time: 30 s

4. Table RPM: 93

5. Spindle RPM: 87

6. Flow rate: 200 ml/min 7. Wafer used: PE-TEOS non-patterned wafer

8. Pressure: 4.0 psi

Table 1 below shows the results of silicon oxide film removal rate, silicon nitride film removal rate and selectivity after polishing non-patterned wafers using the polishing slurry compositions of Examples 1 to 5 and Comparative Example 1 of the present invention.

Comparative Example 1 Example 1 Example 2 Example 3 Example 4 Example 5 polishing liquid abrasive grain ceria ceria ceria ceria ceria ceria dispersant polystyrene
/Acrylic acid
copolymer polystyrene
/Acrylic acid
copolymer polystyrene
/Acrylic acid
copolymer polystyrene
/Acrylic acid
copolymer polystyrene
/Acrylic acid
copolymer polystyrene
/Acrylic acid
copolymer oxide film
booster
(Glucopon) - 1x 2x 3x 4x 5x grinding
evaluation Oxide NPW
RR
60s
(Å/min) 6101 7688 7848 8008 8166 8326

1x = 1.0% by weight

Referring to Table 1, in the case of Examples 1 to 5 in which the oxide film booster was added, it can be seen that the polishing rate of the oxide film is improved according to the amount added, and a high polishing rate of 7,000 Å / min or more is realized. can

That is, the polishing slurry composition according to the present invention can implement an oxide film polishing rate of 7,000 Å/min or more by adding an alkyl polyglucoside as an oxide film booster, and can implement an oxide film polishing rate of 8,000 Å/min or more by adjusting the ratio. It can be seen that

As described above, although the embodiments have been described with limited drawings, those skilled in the art can apply various technical modifications and variations based on the above. For example, the described techniques may be performed in an order different from the method described, and/or the components of the described system, structure, device, circuit, etc. may be combined or combined in a different form than the method described, or other components may be used. Or even if it is replaced or substituted by equivalents, appropriate results can be achieved.

Therefore, other implementations, other embodiments, and equivalents of the claims are within the scope of the following claims.

Claims (15)

An abrasive liquid including an oxide film booster including abrasive particles and an alkyl glucoside represented by the structure of Formula 1 below;
including,
Polishing slurry composition:
[Formula 1]

(In Formula 1, m is an integer from 0 to 10, R3 is a linear or branched C8-C18 alkyl group).
According to claim 1,
The alkyl polyglucoside,
Lauryl Glucoside, Coco-Glucoside, Decyl Glucoside, Caprylyl/Capryl Glucoside, Caprylyl Glucoside, C8- It contains at least one selected from the group consisting of C10 alkyl polyglucoside and C12-C16 alkyl polyglucoside,
Polishing slurry composition.
According to claim 1,
The alkyl polyglucoside,
AG6206 ^® (Lion Specialty Chemicals, Inc.), SIMULSOL SL4 ^® (SEPPIC), TRITON CG-110 ^® (Sigma-Aldrich), Plantapon ^® (BASF), Plantacare ^® (BASF), Mason ^® (BASF), Atplus ^® (Croda), Agnique PG 8107 ^® , Agnique ^{Glucopon 425} N (CAS 110615-47-9 and 68515-73-1 by BASF) (sold in some markets as GLUCOPON 425 N/HH by BASF), Glucopon 600 UP (CAS 110615-47-9) (as GLUCOPON 600 CSUP Sold in some markets, comprising at least one selected from the group consisting of BASF) and Glucopon 650 EC (BASF),
Polishing slurry composition.
According to claim 1,
The alkyl polyglucoside is 0.01% to 5% by weight of the polishing slurry composition,
Polishing slurry composition.
According to claim 1,
The abrasive particles include at least one selected from the group consisting of a metal oxide, a metal oxide coated with an organic or inorganic material, and the metal oxide in a colloidal state,
The metal oxide includes at least one selected from the group consisting of silica, ceria, zirconia, alumina, titania, barium titania, germania, mangania, and magnesia,
Polishing slurry composition.
According to claim 1,
The abrasive particles are prepared by a solid phase method or a liquid phase method,
Polishing slurry composition.
According to claim 1,
The abrasive particles,
To include primary particles having a particle size of 5 nm to 150 nm and secondary particles having a particle size of 30 nm to 300 nm,
Polishing slurry composition.
According to claim 1,
The abrasive particles are 0.1% to 10% by weight of the polishing slurry composition,
Polishing slurry composition.
According to claim 1,
The polishing liquid further includes at least one dispersant selected from the group consisting of an ammonium salt dispersant and a polymer dispersant,
The polymer dispersant is polyacrylic acid, polysulfonic acid, polyacrylic acid ammonium salt, polymethacrylic acid, polymethacrylic acid ammonium salt, polyacrylic maleic acid, acrylic styrene copolymer, polystyrene/acrylic acid copolymer (polystyrene-co-acrylic acid; PAA) -PS), including at least one selected from the group consisting of polyacrylamide/acrylic acid copolymer, polyacrylic acid/sulfonic acid copolymer, polysulfonic acid/acrylamide copolymer, and polyacrylic acid/malonic acid copolymer,
The ammonium salt dispersant is at least selected from the group consisting of ammonium polyacrylate, ammonium polymethacrylate, ammonium nitrate, ammonium phosphate, ammonium acetate, ammonium chloride, ammonium sulfate, ammonium formate, ammonium carbonate and ammonium citrate which includes any one,
Polishing slurry composition.
According to claim 9,
The dispersant is 0.1% to 5% by weight of the polishing slurry composition,
Polishing slurry composition.
According to claim 1,
The polishing slurry composition further comprises an additive solution containing a pH adjusting agent,
The pH adjusting agent is nitric acid, hydrochloric acid, phosphoric acid, sulfuric acid, hydrofluoric acid, hydrobromic acid, iodic acid, formic acid, malonic acid, maleic acid, oxalic acid, acetic acid, adipic acid, citric acid, adipic acid, acetic acid, propionic acid, fumaric acid, lactic acid, an acidic substance comprising at least one selected from the group consisting of salicylic acid, pimelic acid, benzoic acid, succinic acid, phthalic acid, butyric acid, glutaric acid, glutamic acid, glycolic acid, lactic acid, aspartic acid, tartaric acid, and salts thereof; and
selected from the group consisting of ammonia, 2-amino-2-methyl-1-propanol, tetramethylammonium hydroxide, potassium hydroxide, sodium hydroxide, magnesium hydroxide, rubidium hydroxide, cesium hydroxide, sodium hydrogen carbonate, sodium carbonate and imidazole Alkaline material containing at least one;
To include at least one selected from the group consisting of,
Polishing slurry composition.
According to claim 1,
The polishing slurry composition further includes an additive solution including a dishing inhibitor including an anionic polymer,

The anionic polymer,
Polyacrylic acid, polyacrylic acid ammonium salt, polymethacrylic acid, polymethacrylic acid ammonium salt, polyacrylic maleic acid, polystyrene/acrylic acid copolymer (PAA-PS), polyacrylamide/acrylic acid copolymer, poly comprising at least one selected from the group consisting of acrylic acid/sulfonic acid copolymer, polysulfonic acid/acrylamide copolymer, and polyacrylic acid/malonic acid copolymer,
Polishing slurry composition.
According to claim 12,
The dishing inhibitor is 0.1% to 5% by weight of the polishing slurry composition,
Polishing slurry composition.
According to claim 1,
The pH of the polishing slurry composition is 7 to 8,
Polishing slurry composition.
According to claim 1,
When polishing a wafer using the polishing slurry composition,
The polishing rate of the NPW (Non Patterned Wafer) oxide film is 7,000 Å / min or more,
Polishing slurry composition.