KR20230092632A - Display device and manufacturing method thereof - Google Patents

Abstract

A method for manufacturing a display device capable of easily removing misplaced ink is provided. The substrate processing method includes forming a bank defining an ink ejection area on a base, forming a sacrificial pattern on the bank, ejecting ink on the ink ejection area, and forming a layer on the ink in the ink ejection area. The method may include forming a first capping pattern, forming a second capping pattern on the sacrificial pattern, and exposing the top surface of the bank by removing the sacrificial pattern and the second capping pattern.

Description

Display device and manufacturing method thereof

The present invention relates to a display device and a manufacturing method thereof.

In order to manufacture a display device such as a Liquid Crystal Display Device (LCD) or an Organic Light Emitting Diode Display Device (OLED), a printing process of discharging ink may be performed.

Republic of Korea Registered Patent Publication No. 10-1401687 (Announced on May 29, 2014)

On the other hand, ink must be printed in the pixel area. However, ink may be erroneously landed on an area other than the pixel area, which may cause a defect in a subsequent process. Therefore, misplaced ink is removed through the repair process. For example, misplaced ink may be removed using a laser.

However, as the number of misplaced inks increases, the repair process time increases. In addition, if the number of misplaced inks exceeds the preset number, the entire substrate is treated as defective without repair. Since the number of pixels increases as the resolution increases, the number of misplaced ink may increase.

An object to be solved by the present invention is to provide a method for manufacturing a display device capable of easily removing misplaced ink.

Another problem to be solved by the present invention is to provide a display device manufactured by the above manufacturing method.

The tasks of the present invention are not limited to the tasks mentioned above, and other tasks not mentioned will be clearly understood by those skilled in the art from the following description.

One aspect of the manufacturing method of the display device of the present invention for achieving the above object is to form a bank defining an ink ejection area on a base, form a sacrificial pattern on the bank, and eject the ink. ink is ejected on an area, a first capping pattern is formed on the ink in the ink ejection area, a second capping pattern is formed on the sacrificial pattern, and the sacrificial pattern and the second capping pattern are removed, Including exposing the top of the bank.

Here, the ejection of the ink onto the ink ejection area includes ejecting ink misplaced on the sacrificial pattern while the ink is ejected onto the ink ejection area, and wherein the sacrificial pattern and the second capping pattern are ejected. The removing of the ink may include removing ink misattached on the sacrificial pattern together with the sacrificial pattern and the second capping pattern.

Discharging the ink onto the ink ejection area may include discharging the ink so that an upper surface of the bank is higher than an upper surface of the ink. Forming the first capping pattern and the second capping pattern may include exposing at least a portion of a side surface of the sacrificial pattern because the top surface of the sacrificial pattern is higher than the top surface of the first capping pattern. Alternatively, forming the first capping pattern and the second capping pattern may include forming the first capping pattern such that a top surface of the first capping pattern is lower than a top surface of the bank.

The bank includes a first photosensitive material, the sacrificial pattern includes a second photosensitive material different from the first photosensitive material, and removing the sacrificial pattern and the second capping pattern may The sacrificial pattern may be removed using a chemical solution having a higher selectivity to the second photosensitive material than the second photosensitive material, but the bank may not be removed. Here, the chemical solution may be TMAH (Tetramethylammonium hydroxide).

The first capping pattern and the second capping pattern may include an oxide layer, a nitride layer, or an oxynitride layer. Forming the first capping pattern and the second capping pattern may include using plasma-enhanced chemical vapor deposition (PECVD).

The method may further include forming an additional capping layer on an upper surface of the first capping pattern formed in the ink ejection region and an upper surface of the exposed bank.

The method may further include forming a color filter on the base before forming the bank.

Another aspect of the manufacturing method of the display device of the present invention for achieving the above object is to form a bank defining an ink ejection area on a base, wherein the bank includes a first photosensitive material, and a sacrificial material is formed on the bank A pattern is formed, the sacrificial pattern includes a second photosensitive material different from the first photosensitive material, and quantum dot ink is ejected onto the ink ejection area, wherein misattached quantum dot ink is ejected on the sacrificial pattern. A first capping pattern is formed on the quantum dot ink in the ink ejection area, and a second capping pattern is formed on the sacrificial pattern and the misattached quantum dot ink, so that the upper surface of the sacrificial pattern is higher than the upper surface of the first capping pattern. At least a portion of a side surface of the sacrificial pattern is exposed, and quantum dot ink erroneously deposited on the sacrificial pattern is removed by removing the sacrificial pattern and the second capping pattern, wherein the second photosensitive material is more sensitive to the second photosensitive material than the first photosensitive material. It includes removing using a chemical solution with a high selectivity for

The first capping pattern and the second capping pattern include an oxide layer, a nitride layer, or an oxynitride layer. Forming the first capping pattern and the second capping pattern may include using plasma-enhanced chemical vapor deposition (PECVD).

Forming the first capping pattern and the second capping pattern may include forming the first capping pattern so that a top surface of the first capping pattern is lower than a top surface of the bank.

The chemical solution may be TMAH (Tetramethylammonium hydroxide).

One aspect of the display device of the present invention for achieving the above object is a bank formed on a base and defining an ink ejection area; ink formed on the ink ejection area; A capping pattern formed on the ink may be included, and an upper surface of the capping pattern may be equal to or lower than an upper surface of the bank.

An additional capping layer may be further included on the upper surface of the bank and the upper surface of the capping pattern.

Details of other embodiments are included in the detailed description and drawings.

1 is a flowchart illustrating a method of manufacturing a display device according to a first embodiment of the present invention.
2 to 7 are intermediate stage views for explaining the manufacturing method of FIG. 1 .
8 is a diagram for explaining a manufacturing method of a display device according to a second embodiment of the present invention.
9 is a diagram for explaining a manufacturing method of a display device according to a third embodiment of the present invention.
10 is a cross-sectional view illustrating a first substrate (color conversion substrate) of a display device manufactured using a method of manufacturing a display device according to a third embodiment of the present invention.
FIG. 11 is a cross-sectional view for explaining a display device manufactured using the first substrate (color conversion substrate) shown in FIG. 10 .
12 is a cross-sectional view for explaining a display device according to another exemplary embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. Advantages and features of the present invention, and methods for achieving them, will become clear with reference to the embodiments described below in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below and may be implemented in various different forms, only the present embodiments make the disclosure of the present invention complete, and the common knowledge in the art to which the present invention belongs It is provided to fully inform the holder of the scope of the invention, and the present invention is only defined by the scope of the claims. Like reference numbers designate like elements throughout the specification.

The spatially relative terms "below", "beneath", "lower", "above", "upper", etc. It can be used to easily describe the correlation between elements or components and other elements or components. Spatially relative terms should be understood as encompassing different orientations of elements in use or operation in addition to the orientations shown in the figures. For example, when flipping elements shown in the figures, elements described as “below” or “beneath” other elements may be placed “above” the other elements. Thus, the exemplary term “below” may include directions of both below and above. Elements may also be oriented in other orientations, and thus spatially relative terms may be interpreted according to orientation.

Although first, second, etc. are used to describe various elements, components and/or sections, it is needless to say that these elements, components and/or sections are not limited by these terms. These terms are only used to distinguish one element, component or section from another element, component or section. Accordingly, it goes without saying that the first element, first element, or first section referred to below may also be a second element, second element, or second section within the spirit of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the description with reference to the accompanying drawings, the same or corresponding components regardless of reference numerals are given the same reference numerals, Description is omitted.

1 is a flowchart illustrating a method of manufacturing a display device according to a first embodiment of the present invention. 2 to 7 are intermediate stage views for explaining the manufacturing method of FIG. 1 .

Referring to FIGS. 1 and 2 , banks 380 defining ink ejection areas (or transmissive areas) TA1 , TA2 , and TA3 are formed on the base 310 ( S10 ).

Specifically, the base 310 is a material through which light can pass, and may be, for example, a glass substrate or a plastic substrate, but is not limited thereto. The bank 380 may be a material that undergoes a chemical change when irradiated with light (ie, a first photosensitive material). For example, bank 380 may include a negative photoresist (e.g., aromatic bis-azide, methacrylic acid ester, etc.), a positive photoresist (e.g., polymetallic acid ester, etc.) methyl acrylate, naphtchinonediazide, etc.). Alternatively, the bank 380 may include a black matrix, black pigment, metal material, etc. to serve as a light blocking layer, or may include a reflective material such as Al or Ag to increase light efficiency.

Referring to FIGS. 1 and 3 , a sacrificial pattern 410 is formed on the bank 380 (S20).

Specifically, a sacrificial material is formed on the entire surface of the base 310 on which the bank 380 is formed. Here, the sacrificial material may be a material that causes a chemical change when irradiated with light (ie, the second photosensitive material). The sacrificial material may be a negative photoresist or a positive photoresist, but may be a material different from the first photosensitive material constituting the bank 380 .

The sacrificial material formed in the ink ejection areas TA1 , TA2 , and TA3 is removed, and the sacrificial material is left only on the bank 380 to form the sacrificial pattern 410 . When a photosensitive material is used as the sacrificial material, only the sacrificial material formed in the ink discharge areas TA1 , TA2 , and TA3 may be selectively removed through exposure and development processes.

Referring to FIGS. 1 and 4 , inks 330 , 340 , and 350 are ejected onto the ink ejection areas TA1 , TA2 , and TA3 ( S30 ). For example, the first ink 330 is applied to the first ink ejection area TA1, the second ink 340 is applied to the second ink ejection area TA2, and the third ink 350 is ejected through inkjet equipment. 3 It is possible to print on the ink ejection area TA3.

For example, the first ink 330 may be for blue light, the second ink 340 for red light, and the third ink 350 for green light. For example, the first ink 330 transmits blue light, the second ink 340 converts or shifts the blue light into red light, and the third ink 350 converts or shifts the blue light into green light. can be made A detailed description of this will be described later with reference to FIG. 10 . At least one of the first ink 330 to the third ink 350 may include quantum dots. Here, ink containing quantum dots is referred to as quantum dot ink.

Also, as shown, the inks 330, 340, and 350 are ejected so that the upper surface of the bank 380 is higher than the upper surface of the inks 330, 340, and 350. For example, this is to prevent the first ink 330 from exceeding the corresponding first ink discharge area TA1 and affecting the neighboring second ink discharge area TA2. Since the first ink 330 and the second ink 340 are of different types, the first ink 330 and the second ink 340 should not be mixed with each other. Therefore, the first ink 330 should not be ejected to the second ink ejection area TA2.

Meanwhile, while the inks 330, 340, and 350 are ejected onto the ink ejection areas TA1, TA2, and TA3, some of the inks 330a, 340a fall on areas other than the ink ejection areas TA1, TA2, and TA3. can get stuck That is, some of the inks 330a and 340a may be erroneously landed on the sacrificial pattern 410 .

Referring to FIGS. 1 and 5 , a first capping pattern 451 is formed on the inks 330 , 340 , and 350 of the ink ejection areas TA1 , TA2 , and TA3 , and a second capping pattern 451 is formed on the sacrificial pattern 410 . A pattern 452 is formed (S40).

Specifically, the second capping pattern 452 is mainly formed on the top surface 410u of the sacrificial pattern 410 and is rarely formed on the side surface 410s of the sacrificial pattern 410 . Also, the first capping pattern 451 is not formed higher than the sacrificial pattern 410 . That is, the upper surface 410u of the sacrificial pattern 410 is higher than the upper surface 451u of the first capping pattern 451 (refer to reference numeral H1). Thus, at least a portion of the side surface 410s of the sacrificial pattern 410 is exposed.

To form the first capping pattern 451 and the second capping pattern 452 in this form, for example, a plasma-enhanced chemical vapor deposition (PECVD) method may be used, but is not limited thereto. The first capping pattern 451 and the second capping pattern 452 may be, for example, an oxide layer, a nitride layer, or an oxynitride layer, but are not limited thereto.

As shown, since some of the inks 330a and 340a are erroneously deposited on the sacrificial pattern 410, when the second capping pattern 452 is formed on the sacrificial pattern 410, the sacrificial pattern 410 and Between the second capping patterns 452 , misattached inks 330a and 340a may be located.

Referring to FIGS. 1, 6, and 7, the sacrificial pattern 410 and the second capping pattern 452 are removed (see FIG. 6) to expose the top surface 380u of the bank 380 (see FIG. 7). ).

Specifically, the sacrificial pattern 410 may be removed using a chemical solution. As the sacrificial pattern 410 is removed, the second capping pattern 452 on the sacrificial pattern 410 is also removed. The misplaced inks 330a and 340a located between the sacrificial pattern 410 and the second capping pattern 452 are also removed.

Here, as the chemical solution for removing the sacrificial pattern 410 , a chemical solution having a higher selectivity for the sacrificial pattern 410 than that of the bank 380 is used. That is, when the bank 380 includes the first photosensitive material and the sacrificial pattern 410 includes the second photosensitive material, the chemical solution should have a higher selectivity for the second photosensitive material than for the first photosensitive material. For example, the chemical solution may be TMAH (Tetramethylammonium hydroxide), but is not limited thereto.

As described in FIG. 5 , the upper surface 410u of the sacrificial pattern 410 is higher than the upper surface 451u of the first capping pattern 451 or the upper surface 451u of the first capping pattern 451 is the bank 380 ), or lower than the upper surface 380u of the bank 380. Accordingly, since at least a portion of the side surface 410s of the sacrificial pattern 410 is exposed, the sacrificial pattern 410 can be easily removed by a chemical solution.

In addition, since the first capping pattern 451 is disposed on the inks 330, 340, and 350, the inks 330, 340, and 350 are not damaged by the chemical solution.

According to the manufacturing method of the display device according to the first embodiment of the present invention, the misplaced inks 330a and 340a can be easily removed using the sacrificial pattern 410 . Since a separate repair process using a laser or the like may not be used or minimized, a decrease in yield due to an increase in repair process time may be prevented.

8 is a diagram for explaining a manufacturing method of a display device according to a second embodiment of the present invention. For convenience of explanation, the description will focus on differences from those described with reference to FIGS. 1 to 7 .

In the manufacturing method of the display device according to the first embodiment of the present invention, when forming the first capping pattern 451 on the ink 330, 340, and 350 in relation to step S40 of FIG. 1, the first capping pattern 451 is formed. The top surface 451u of the pattern 451 and the top surface 380u of the bank 380 may be positioned at the same height (see FIG. 5 ). Therefore, even after the sacrificial pattern 410 is removed, the top surface 451u of the first capping pattern 451 and the top surface 380u of the bank 380 may be positioned at the same height (see FIG. 7 ).

On the other hand, in the manufacturing method of the display device according to the second exemplary embodiment of the present invention, when forming the first capping pattern 451 on the inks 330, 340, and 350 in step S40 of FIG. An upper surface 451u of the pattern 451 may be lower than an upper surface 380u of the bank 380 . When the first capping pattern 451 is formed in this way, since the interface between the bank 380 and the sacrificial pattern 410 is exposed, when the sacrificial pattern 410 is removed, the sacrificial pattern 410 is can be more easily removed. When the sacrificial pattern 410 is removed, a cross section as shown in FIG. 8 may be formed. That is, the top surface 451u of the first capping pattern 451 and the top surface 380u of the bank 380 may differ by a predetermined height H2.

9 is a diagram for explaining a manufacturing method of a display device according to a third embodiment of the present invention. For convenience of explanation, the description will focus on differences from those described with reference to FIGS. 1 to 7 .

Referring to FIG. 9 , an additional capping layer 393 may be formed on the result of FIG. 7 . That is, the additional capping layer 393 may be formed on the exposed upper surface 380u of the bank 380 and the upper surface 451u of the first capping pattern 451 . The additional capping layer 393 may be an oxide layer, a nitride layer, or an oxynitride layer. If both the first capping pattern 451 and the additional capping layer 393 are made of an inorganic material, an inorganic-inorganic bond can be formed at a portion where the first capping pattern 451 and the additional capping layer 393 come into contact, and moisture or moisture from the outside can be formed. It can effectively block the inflow of air.

10 is a cross-sectional view of a portion of a display device manufactured using a method of manufacturing a display device according to a third exemplary embodiment of the present invention. 10 illustrates the first substrate (or color conversion substrate) 30a of the display device.

Referring to FIG. 10 , the base 310 includes a first light transmission area TA1, a second light transmission area TA2, a third light transmission area TA3, a first light blocking area BA1, and a second light blocking area BA2. , a third light blocking area BA3 is defined. The first to third light transmitting areas TA1 to TA3 correspond to the ink ejection areas TA1 to TA3 of FIG. 2 .

A first color filter 231 , a second color filter 233 , and a third color filter 235 are disposed on the base 310 .

The first color filter 231 disposed in the first light transmitting area TA1 selectively transmits light of a first color (eg, blue light) and transmits light of a second color (eg, red light) and light of a third color. (e.g., green light) may be blocked or absorbed. The first color filter 231 may be a blue color filter and may include a blue colorant such as a blue dye or a blue pigment. In the present specification, a colorant is a concept including both a dye and a pigment.

The second color filter 233 disposed in the second light transmission area TA2 may block or absorb first color light (eg, blue light). That is, the second color filter 233 may function as a blue light blocking filter that blocks blue light. The second color filter 233 may selectively transmit light of a second color (eg, red light) and block or absorb light of a first color (eg, blue light) and light of a third color (eg, green light). there is. The second color filter 233 may be a red color filter and may include a red colorant such as red dye or red pigment.

The third color filter 235 disposed in the third light transmission area TA3 may block or absorb the first color light (eg, blue light). That is, the third color filter 235 may also function as a blue light blocking filter. The third color filter 235 may selectively transmit light of a third color (eg, green light) and block or absorb light of a first color (eg, blue light) and light of a second color (eg, red light). there is. The third color filter 235 may be a green color filter and may include a green colorant such as green dye or green pigment.

The color patterns 251, 252, and 253 are formed on the first to third light blocking areas BA1 to BA3. The color patterns 251 , 252 , and 253 may be made of the same material as the first color filter 231 and installed at the same level as the first color filter 231 .

First to third light blocking members 221 , 222 , and 223 may be formed on the color patterns 251 , 252 , and 253 .

The first capping layer 391 may be conformally formed on the first to third color filters 231 , 233 and 235 and the first to third light blocking members 221 , 222 and 223 . The first capping layer 391 prevents impurities such as moisture or air from penetrating from the outside to damage or contaminate the color patterns 251 , 252 , and 253 and the first to third light blocking members 221 , 222 , and 223 . that can be prevented In addition, in the first capping layer 391, the color material included in the first color filter 231, the second color filter 233, and the third color filter 235 is applied to the first color filter 231 and the second color filter ( 233) and the third color filter 235, such as the first wavelength conversion pattern 340 and the second wavelength conversion pattern 350, etc. to prevent diffusion. In some embodiments, the first capping layer 391 may be made of an inorganic material. For example, the first capping layer 391 may include silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, and silicon oxynitride. can be made including

The bank 380 may be located on the first to third blocking areas BA1 to BA3. A planar shape of the bank 380 may be a lattice shape.

A light transmission pattern 330 (corresponding to the first ink 330 of FIG. 4 ) is formed on the first color filter 231 of the first light transmission area TA1 . The light transmission pattern 330 may include a first base resin 331 and a first scattering material 333 . The first base resin 331 is made of a material having high light transmittance, and may be, for example, an organic material such as an epoxy-based resin, an acrylic-based resin, a cardo-based resin, or an imide-based resin. The first scattering material 333 may be a light scattering particle, for example, a metal oxide particle or an organic particle. Examples of the metal oxide include titanium oxide (TiO2), zirconium oxide (ZrO2), aluminum oxide (Al2O3), indium oxide (In2O3), zinc oxide (ZnO), or tin oxide (SnO2). As the example, acrylic resins or urethane resins can be exemplified. The first scattering body 333 may scatter light in a random direction regardless of an incident direction of incident light without substantially changing the wavelength of light passing through the light transmission pattern 330 .

The light transmission pattern 330 may transmit incident light. While the incident light passes through the light transmission pattern 330 and the first color filter 231, the red light/green light components are filtered and emitted as blue light.

A first wavelength conversion pattern 340 (corresponding to the second ink 340 of FIG. 4 ) is formed on the second color filter 233 of the second light transmission area TA2 . The first wavelength conversion pattern 340 includes a second base resin 341 , a second scattering material 343 , and a first wavelength shifter 345 .

The second base resin 341 may include the same material as the first base resin 331 or at least one of the materials exemplified as constituent materials of the first base resin 331 . The second scattering body 343 may also include the same material as the first scattering body 333 or at least one of the materials exemplified as constituent materials of the first scattering body 333 .

The first wavelength shifter 345 may convert or shift the peak wavelength of incident light to another specific peak wavelength. The first wavelength shifter 345 may convert incident light (eg, blue light) into red light having a single peak wavelength in a range of about 610 nm to about 650 nm and emit it.

Examples of the first wavelength shifter 345 include quantum dots, quantum rods, or phosphors. For example, a quantum dot may be a particulate material that emits a specific color while electrons transition from a conduction band to a valence band.

The quantum dots may be semiconductor nanocrystal materials. The quantum dots may have a specific bandgap according to their composition and size, absorb light, and then emit light having a unique wavelength. Examples of the quantum dot semiconductor nanocrystal include group IV nanocrystals, group II-VI compound nanocrystals, group III-V compound nanocrystals, group IV-VI nanocrystals, or combinations thereof.

The group II-VI compound is a binary element compound selected from the group consisting of CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, and mixtures thereof; InZnP, AgInS, CuInS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZn With Se, MgZnS and their mixtures A three-element compound selected from the group consisting of; And it may be selected from the group consisting of quaternary compounds selected from the group consisting of HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, and mixtures thereof.

Group III-V compound is a binary element compound selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb and mixtures thereof; A ternary compound selected from the group consisting of GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb, GaAlNP, and mixtures thereof; and a quaternary compound selected from the group consisting of GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, and mixtures thereof.

Group IV-VI compounds are SnS, SnSe, SnTe, PbS, PbSe, PbTe, and a binary element compound selected from the group consisting of mixtures thereof; a ternary compound selected from the group consisting of SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, and mixtures thereof; And it may be selected from the group consisting of quaternary compounds selected from the group consisting of SnPbSSe, SnPbSeTe, SnPbSTe, and mixtures thereof. Group IV elements may be selected from the group consisting of Si, Ge, and mixtures thereof. The group IV compound may be a binary element compound selected from the group consisting of SiC, SiGe, and mixtures thereof.

In this case, the two-element compound, the three-element compound, or the quaternary element compound may be present in the particle at a uniform concentration or may be present in the same particle in a state in which the concentration distribution is partially different. Also, one quantum dot may have a core/shell structure surrounding another quantum dot. The interface between the core and the shell may have a concentration gradient in which the concentration of elements present in the shell decreases toward the center.

In some embodiments, the quantum dot may have a core-shell structure including a core including the aforementioned nanocrystal and a shell surrounding the core. The shell of the quantum dots may serve as a protective layer for maintaining semiconductor properties by preventing chemical deterioration of the core and/or as a charging layer for imparting electrophoretic properties to the quantum dots. The shell may be monolayer or multilayer. The interface between the core and the shell may have a concentration gradient in which the concentration of elements present in the shell decreases toward the center. Examples of the quantum dot shell include metal or non-metal oxides, semiconductor compounds, or combinations thereof.

For example, the metal or nonmetal oxide may be SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, NiO, or a binary element compound such as MgAl2O4, CoFe2O4, or NiFe2O4. , CoMn 2 O 4 and the like can be exemplified, but the present invention is not limited thereto.

In addition, examples of the semiconductor compound include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, and the like. However, the present invention is not limited thereto.

A second wavelength conversion pattern 350 (corresponding to the third ink 350 of FIG. 4 ) is formed on the third color filter 235 of the third light transmission area TA3 .

The second wavelength conversion pattern 350 includes a third base resin 351 , a third scattering material 353 , and a second wavelength shifter 355 .

The third base resin 351 may include the same material as the first base resin 331 or at least one of materials exemplified as constituent materials of the first base resin 331 . The third scattering body 353 may also include the same material as the first scattering body 333 or at least one of the materials exemplified as constituent materials of the first scattering body 333 .

The second wavelength shifter 355 may convert or shift the peak wavelength of incident light to another specific peak wavelength. The second wavelength shifter 355 may convert incident light (eg, blue light) into green light having a peak wavelength in a range of about 510 nm to about 550 nm, and then emit the light.

Examples of the second wavelength shifter 355 include quantum dots, quantum rods, or phosphors. For example, a quantum dot may be a particulate material that emits a specific color while electrons transition from a conduction band to a valence band.

A first capping pattern 451 is formed on the light transmission pattern 330, the first wavelength conversion pattern 340, and the second wavelength conversion pattern 350, respectively. A top surface of the first capping pattern 451 may be disposed equal to or lower than a top surface of the bank 380 . A second capping layer 393 (additional capping layer 393 in FIG. )) may be located.

The first capping pattern 451 and the second capping layer 393 may seal the light transmission pattern 330 , the first wavelength conversion pattern 340 and the second wavelength conversion pattern 350 . Accordingly, it is possible to prevent impurities such as moisture or air from penetrating from the outside to damage or contaminate the light transmission pattern 330 , the first wavelength conversion pattern 340 , and the second wavelength conversion pattern 350 .

FIG. 11 is a cross-sectional view for explaining a display device manufactured using the first substrate (color conversion substrate) shown in FIG. 10 .

Referring to FIG. 11 , the first substrate 30a described with reference to FIG. 10 and the second substrate 10 on which a circuit for displaying an image is formed are coupled to each other. A filler 70 may be positioned in the space between the first substrate 30a and the second substrate 10 .

Since the first substrate 30a has been described with reference to FIG. 10 , a description thereof is omitted.

Referring to the second substrate 10, in the second substrate 10, the base 110 includes a first light emitting area LA1, a second light emitting area LA2, a third light emitting area LA3, and a non-light emitting area LA3. An area NLA is defined. The first light-emitting area LA1, the second light-emitting area LA2, and the third light-emitting area LA3 correspond to the first to third light-emitting areas TA1 to TA3 of the first substrate 30a, and are non-light-emitting areas. (NLA) corresponds to the light blocking areas BA1 to BA3 of the first substrate 30a.

The first switching element T1 and the first light emitting element ED1 are positioned in the first light emitting region LA1, and the second switching element T2 and the second light emitting element ED2 are positioned in the second light emitting region LA2. and the third switching element T3 and the third light emitting element ED3 are located in the third light emitting region LA3.

The first light emitting device ED1 includes a first anode electrode AE1, a light emitting layer OL, and a cathode electrode CE, and the second light emitting device ED2 includes a second anode electrode AE2 and a light emitting layer OL. and a cathode electrode CE, and the third light emitting element ED3 includes a third anode electrode AE3, an emission layer OL, and a cathode electrode CE.

An insulating layer 130 may be positioned on the first switching element T1 , the second switching element T2 , and the third switching element T3 . In some embodiments, the insulating layer 130 may be a planarization layer.

A first anode electrode AE1 , a second anode electrode AE2 , and a third anode electrode AE3 are positioned on the insulating layer 130 . A pixel defining layer 150 may be positioned on the first anode electrode AE1 , the second anode electrode AE2 , and the third anode electrode AE3 . The pixel defining layer 150 may include an opening exposing the first anode electrode AE1 , an opening exposing the second anode electrode AE2 , and an opening exposing the third anode electrode AE3 . A light emitting area LA1 , a second light emitting area LA2 , a third light emitting area LA3 , and a non-emitting area NLA may be defined.

A first anode electrode AE1 , a second anode electrode AE2 , and a third anode electrode AE3 may be positioned on the insulating layer 130 . The first anode electrode AE1 is positioned within the first light emitting area LA1, but at least a portion thereof may extend to the non-emitting area NLA. The first anode electrode AE1 , the second anode electrode AE2 , and the third anode electrode AE3 may be reflective electrodes, and in this case, the first anode electrode AE1 , the second anode electrode AE2 and The third anode electrode AE3 may be a metal layer including a metal such as Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, or Cr. In another embodiment, the first anode electrode AE1 , the second anode electrode AE2 , and the third anode electrode AE3 may further include a metal oxide layer stacked on the metal layer. In an exemplary embodiment, the first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3 may have a two-layer structure of ITO/Ag, Ag/ITO, ITO/Mg, ITO/MgF, or ITO It may have a multilayer structure such as /Ag/ITO.

An emission layer OL may be positioned on the first anode electrode AE1 , the second anode electrode AE2 , and the third anode electrode AE3 . The light emitting layer OL may have a shape of a continuous film formed over a plurality of light emitting areas LA1 , LA2 , LA3 , LA4 , LA5 , and LA6 and a non-light emitting area NLA.

The cathode electrode CE may have semi-transmissive or transmissive properties. When the cathode electrode CE has the above semi-permeability, the cathode electrode CE is Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, LiF/Ca, LiF /Al, Mo, Ti or compounds or mixtures thereof, such as Ag and Mg. In addition, when the thickness of the cathode electrode CE is several tens to hundreds of angstroms, the cathode electrode CE may have semi-permeability.

When the cathode electrode CE has transparency, the cathode electrode CE may include transparent conductive oxide (TCO). For example, the cathode electrode CE may be WxOx (tungsten oxide), TiO2 (titanium oxide), ITO (indium tin oxide), IZO (indium zinc oxide), ZnO (zinc oxide), ITZO (indium tin zinc oxide), MgO (magnesium oxide) and the like may be included.

The light L1 emitted from the light emitting layer OL is blue light and includes a long wavelength component, a medium wavelength component, and a short wavelength component. Therefore, finally, the light emitting layer OL can emit blue light having a broader emission peak as the light L1.

A thin film encapsulation layer 170 is disposed on the cathode electrode CE. The thin film encapsulation layer 170 is commonly disposed in the first light emitting area LA1 , the second light emitting area LA2 , the third light emitting area LA3 , and the non-light emitting area NLA.

The thin film encapsulation layer 170 may include a first encapsulation inorganic layer 171 , an encapsulation organic layer 173 , and a second encapsulation inorganic layer 175 sequentially stacked on the cathode electrode CE. The first encapsulating inorganic film 171 and the second encapsulating inorganic film 175 are silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, and cerium, respectively. oxide, silicon oxynitride (SiON), and the like. The encapsulation organic layer 173 may be made of acrylic resin, methacrylic resin, polyisoprene, vinyl resin, epoxy resin, urethane resin, cellulose resin, and perylene resin.

In addition, a panel light blocking member 190 may be positioned on the thin film encapsulation layer 170 . The panel light blocking member 190 may be positioned on the thin film encapsulation layer 170 and positioned within the non-emission area NLA. The panel light-blocking member 190 can prevent light from penetrating between adjacent light emitting regions and thus color mixing, thereby further improving color reproducibility.

The second substrate 10 and the first substrate 30a described with reference to FIG. 10 are coupled to each other. A filler 70 may be positioned in the space between the second substrate 10 and the first substrate 30a. The filler 70 may be made of a material capable of transmitting light. In some embodiments, filler 70 may be made of an organic material. Illustratively, the filler 70 may be made of a Si-based organic material, an epoxy-based organic material, or the like, but is not limited thereto.

The light L1 generated by the first light emitting device ED1 passes through the light transmission pattern 330 of the first substrate 30a and the first color filter 231, and is emitted as blue light. The light L1 generated by the second light emitting device ED2 passes through the first wavelength conversion pattern 340 and the second color filter 233 of the first substrate 30a, and is emitted as red light. The light L1 generated by the third light emitting device ED3 passes through the second wavelength conversion pattern 350 and the third color filter 235 of the first substrate 30a, and is emitted as green light.

12 is a cross-sectional view illustrating a display device according to another exemplary embodiment of the present invention. For convenience of description, the substantially same contents as those described with reference to FIGS. 10 and 11 will be omitted.

Referring to FIG. 12 , the first substrate 10b includes the first light emitting device ED1, the second light emitting device ED2, and the third light emitting device ED3 on the base 110, as well as a light transmission pattern ( 330), the first wavelength conversion pattern 340 and the second wavelength conversion pattern 350, the color filters 231a, 233a, and 235a, the first capping pattern 451, the color pattern 250a, and the light blocking member 220a. is formed

A second substrate 30b including a base 310 may be positioned on the first substrate 10b, and a filler 70 may be positioned between the first substrate 10b and the second substrate 30b.

Although the embodiments of the present invention have been described with reference to the above and accompanying drawings, those skilled in the art to which the present invention pertains can implement the present invention in other specific forms without changing the technical spirit or essential features. You will understand that there is Therefore, the embodiments described above should be understood as illustrative in all respects and not limiting.

310: base
330, 340, 350: ink
330a, 340a: misplaced ink
380: bank
410: Sacrificial Pattern
451: first capping pattern
452: second capping pattern

Claims (18)

On the base, forming a bank defining an ink ejection area;
Forming a sacrificial pattern on the bank;
ejecting ink on the ink ejection area;
forming a first capping pattern on the ink in the ink ejection area and a second capping pattern on the sacrificial pattern;
and exposing an upper surface of the bank by removing the sacrificial pattern and the second capping pattern. According to claim 1,
The ejection of the ink onto the ink ejection area includes ejecting ink misplaced on the sacrificial pattern while the ink is ejected onto the ink ejection area;
The method of manufacturing a display device, wherein the removing of the sacrificial pattern and the second capping pattern includes removing ink erroneously deposited on the sacrificial pattern together with the sacrificial pattern and the second capping pattern. According to claim 1,
The method of claim 1 , wherein the ejecting the ink onto the ink ejection area includes ejecting the ink such that an upper surface of the bank is higher than an upper surface of the ink. According to claim 3,
Forming the first capping pattern and the second capping pattern may include exposing at least a portion of a side surface of the sacrificial pattern because the top surface of the sacrificial pattern is higher than the top surface of the first capping pattern. method. According to claim 3,
The method of claim 1 , wherein forming the first capping pattern and the second capping pattern includes forming the first capping pattern such that a top surface of the first capping pattern is lower than a top surface of the bank. According to claim 1,
The bank includes a first photosensitive material, the sacrificial pattern includes a second photosensitive material different from the first photosensitive material,
The removing of the sacrificial pattern and the second capping pattern includes removing the sacrificial pattern using a liquid chemical having a higher selectivity for the second photosensitive material than the first photosensitive material and not removing the bank. , A method for manufacturing a display device. According to claim 6,
The method of manufacturing a display device, wherein the chemical solution is TMAH (Tetramethylammonium hydroxide). According to claim 1,
The method of manufacturing a display device, wherein the first capping pattern and the second capping pattern include an oxide layer, a nitride layer, or an oxynitride layer. According to claim 8,
The method of claim 1 , wherein forming the first capping pattern and the second capping pattern includes using plasma-enhanced chemical vapor deposition (PECVD). According to claim 1,
The method of claim 1 , further comprising forming an additional capping layer on an upper surface of the first capping pattern formed in the ink ejection region and on an upper surface of the exposed bank. According to claim 1,
The manufacturing method of the display device further comprising forming a color filter on the base before forming the bank. Forming a bank defining an ink ejection area on the base, wherein the bank includes a first photosensitive material;
Forming a sacrificial pattern on the bank, wherein the sacrificial pattern includes a second photosensitive material different from the first photosensitive material;
Quantum dot ink is ejected on the ink ejection area, and quantum dot ink that is misplaced is ejected on the sacrificial pattern;
A first capping pattern is formed on the quantum dot ink in the ink ejection area, and a second capping pattern is formed on the sacrificial pattern and the misattached quantum dot ink, wherein the upper surface of the sacrificial pattern is higher than the upper surface of the first capping pattern. At least a portion of a side surface of the sacrificial pattern is exposed;
Removing the sacrificial pattern and the second capping pattern to remove the quantum dot ink erroneously deposited on the sacrificial pattern, using a liquid chemical having a higher selectivity for the second photosensitive material than for the first photosensitive material. A method of manufacturing a display device, comprising: According to claim 12,
The method of manufacturing a display device, wherein the first capping pattern and the second capping pattern include an oxide layer, a nitride layer, or an oxynitride layer. According to claim 13,
The method of claim 1 , wherein forming the first capping pattern and the second capping pattern includes using plasma-enhanced chemical vapor deposition (PECVD). According to claim 12,
The method of claim 1 , wherein forming the first capping pattern and the second capping pattern includes forming the first capping pattern such that a top surface of the first capping pattern is lower than a top surface of the bank. According to claim 12,
The method of manufacturing a display device, wherein the chemical solution is TMAH (Tetramethylammonium hydroxide). a bank formed on the base and defining an ink ejection area;
ink formed on the ink ejection area;
A capping pattern formed on the ink;
A top surface of the capping pattern is equal to or lower than a top surface of the bank. According to claim 17,
The display device further comprises an additional capping layer disposed on upper surfaces of the bank and upper surfaces of the capping pattern.

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