CN116322240A - Display device and method for manufacturing the same - Google Patents
Display device and method for manufacturing the same Download PDFInfo
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- CN116322240A CN116322240A CN202211205338.1A CN202211205338A CN116322240A CN 116322240 A CN116322240 A CN 116322240A CN 202211205338 A CN202211205338 A CN 202211205338A CN 116322240 A CN116322240 A CN 116322240A
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Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
- H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M5/00—Duplicating or marking methods; Sheet materials for use therein
- B41M5/0041—Digital printing on surfaces other than ordinary paper
- B41M5/007—Digital printing on surfaces other than ordinary paper on glass, ceramic, tiles, concrete, stones, etc.
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M5/00—Duplicating or marking methods; Sheet materials for use therein
- B41M5/0041—Digital printing on surfaces other than ordinary paper
- B41M5/0064—Digital printing on surfaces other than ordinary paper on plastics, horn, rubber, or other organic polymers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
- H10K71/236—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers using printing techniques, e.g. applying the etch liquid using an ink jet printer
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention provides a method for manufacturing a display device capable of easily removing ink which is erroneously dropped. The substrate processing method includes: forming a bank (bank) defining an ink ejection area on a substrate; forming a sacrificial pattern on the bank; ejecting ink onto the ink ejection area; forming a first cover pattern on the ink of the ink ejection area and forming a second cover pattern on the sacrificial pattern; the sacrificial pattern and the second cover pattern are removed to expose an upper surface of the bank.
Description
Technical Field
The present invention relates to a display device and a method of manufacturing the same.
Background
In order to manufacture a display device such as a liquid crystal display device (Liquid Crystal Display Device, LCD), an organic light emitting display device (Organic Light Emitting Diode Display Device, OLED), or the like, a printing process of ejecting ink may be performed.
Disclosure of Invention
Problems to be solved by the invention
On the other hand, ink must be printed in the pixel area. However, ink may be erroneously dropped to a region other than the pixel region, which may cause a defect in a subsequent process. Therefore, the ink that drips by mistake is removed by the repair process. For example, misdropped ink may be removed using a laser.
However, the larger the number of erroneously dropped inks, the longer the repair process time. If the number of ink droplets by mistake exceeds the preset number, the repair is not performed, and the entire substrate is treated as defective. Since the higher the resolution is, the more the number of pixels is, the number of ink erroneously dropped may become larger.
The invention provides a method for manufacturing a display device capable of easily removing ink which is erroneously dropped.
Another object of the present invention is to provide a display device manufactured by the above manufacturing method.
The problems of the present invention are not limited to the above-mentioned problems, and other problems not mentioned can be clearly understood by those skilled in the art from the following description.
Means for solving the problems
An aspect (aspect) of the method for manufacturing a display device according to the present invention for solving the above-described problems includes: forming a bank (bank) defining an ink ejection area on a substrate; forming a sacrificial pattern on the bank; ejecting ink onto the ink ejection area; forming a first cover pattern on the ink of the ink ejection area and forming a second cover pattern on the sacrificial pattern; the sacrificial pattern and the second cover pattern are removed to expose an upper surface of the bank.
Another aspect of the method for manufacturing a display device according to the present invention for solving the above-described problems includes: forming a bank defining an ink ejection area on a substrate, the bank containing a first photosensitive substance; forming a sacrificial pattern on the bank, the sacrificial pattern including a second photosensitive material different from the first photosensitive material; ejecting quantum dot ink onto the ink ejection area, and ejecting quantum dot ink with false drops on the sacrificial pattern; forming a first cover pattern on the quantum dot ink of the ink ejection region and forming a second cover pattern on the sacrificial pattern and the erroneously dropped quantum dot ink, and exposing at least a portion of a side surface of the sacrificial pattern by making an upper surface of the sacrificial pattern higher than an upper surface of the first cover pattern; the sacrificial pattern and the second cover pattern are removed to remove quantum dot ink erroneously dropped onto the sacrificial pattern, and the removal is performed with a chemical solution having a higher selectivity ratio of the second photosensitive material to the first photosensitive material.
One aspect of the display device of the present invention for solving the other problem described above includes: a bank formed on the substrate and defining an ink ejection area; an ink formed on the ink ejection area; and a cover pattern formed on the ink, an upper surface of the cover pattern being flush with or lower than an upper surface of the bank.
Specific details of other embodiments are included in the detailed description and the accompanying drawings.
Drawings
Fig. 1 is a flowchart for explaining a manufacturing method of a display device according to a first embodiment of the present invention.
Fig. 2 to 7 are intermediate step diagrams for explaining the manufacturing method of fig. 1.
Fig. 8 is a diagram for explaining a manufacturing method of a display device according to a second embodiment of the present invention.
Fig. 9 is a diagram for explaining a manufacturing method of a display device according to a third embodiment of the present invention.
Fig. 10 is a cross-sectional view showing a first substrate (color conversion substrate) of a display device manufactured by the manufacturing method of a display device according to the third embodiment of the present invention.
Fig. 11 is a cross-sectional view for explaining a display device manufactured using the first substrate (color conversion substrate) shown in fig. 10.
Fig. 12 is a sectional view for explaining a display device according to still another embodiment of the present invention.
Detailed Description
Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The advantages, features and methods of accomplishing the same may be apparent by reference to the accompanying drawings and the detailed embodiments described below. However, the present invention is not limited to the embodiments disclosed below, but may be embodied in various manners different from each other, which are provided only for completely disclosing the present invention and completely informing one of ordinary skill in the art to which the present invention pertains of the scope of the present invention, which is defined only by the scope of the claims. Throughout the specification, like reference numerals refer to like constituent elements.
"lower", "upper", and the like as spatially relative terms may be used to more easily describe a correlation between one element or constituent element and another element or constituent element as shown in the figures. Spatially relative terms are to be understood as comprising, in addition to the orientation shown in the figures, also the terms "orientation" and "orientation" of the elements when used or operated upon. For example, in the case where an element shown in the drawings is turned over, an element described as "below" or "under" of another element may be placed "above" the other element, and thus, the exemplary term "below" may include all of the below and above.
It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, components and/or sections, these elements, components and/or sections should not, of course, be limited by these terms. These terms are only used to distinguish one element, component, or section from another element, component, or section. Therefore, it is needless to say that the first element, the first constituent element, or the first portion mentioned below may be the second element, the second constituent element, or the second portion within the technical idea of the present invention.
Hereinafter, embodiments according to the present invention will be described in detail with reference to the accompanying drawings, and the same or corresponding constituent elements will be given the same reference numerals and repeated descriptions thereof will be omitted.
Fig. 1 is a flowchart for explaining a manufacturing method of a display device according to a first embodiment of the present invention. Fig. 2 to 7 are intermediate step diagrams for explaining the manufacturing method of fig. 1.
Referring to fig. 1 and 2, banks 380 defining ink ejection areas (or light transmitting areas) TAl, TA2, TA3 are formed on a substrate 310 (S10).
Specifically, the base 310 is made of a material that can transmit light, and may be, for example, a glass substrate or a plastic substrate, but is not limited thereto. The bank 380 may be a substance that causes a chemical change when light is irradiated (i.e., a first photosensitive substance). For example, the banks 380 may include negative photoresist (e.g., aromatic bis-azides (bis-azides), methacrylates (methacrylic acid ester), etc.), positive photoresist (e.g., polymethyl methacrylate, diazidonaphthoquinone, etc.). In addition, the bank 380 may alternatively contain a black matrix, a black pigment, a metal substance, or the like to function as a light shielding layer, or may further include a reflective substance such as Al, ag to improve light efficiency.
Referring to fig. 1 and 3, a sacrificial pattern 410 is formed on a bank 380 (S20).
Specifically, the sacrificial material is formed on the entire surface of the substrate 310 on which the bank 380 is formed. The sacrificial material may be a material that causes a chemical change when irradiated with light (i.e., a second photosensitive material). The sacrificial material may be a negative photoresist or a positive photoresist, and may be a material different from the first photosensitive material constituting the bank 380.
The sacrificial material formed in the ink ejection areas TA1, TA2, and TA3 is removed, and the sacrificial pattern 410 is formed by leaving the sacrificial material only on the bank 380. In the case of using a photosensitive material as the sacrificial material, only the sacrificial material formed in the ink ejection areas TA1, TA2, TA3 can be selectively removed by an exposure and development process.
Referring to fig. 1 and 4, the inks 330, 340, 350 are ejected to the ink ejection areas TA1, TA2, TA3 (S30). For example, the first ink 330 may be printed to the first ink ejection area TA1, the second ink 340 may be printed to the second ink ejection area TA2, and the third ink 350 may be printed to the third ink ejection area TA3 by an inkjet device.
For example, the first ink 330 may be for blue light, the second ink 340 may be for red light, and the third ink 350 may be for green light. For example, the first ink 330 transmits blue light, the second ink 340 wavelength-converts or changes the blue light to make it red light, and the third ink 350 wavelength-converts or changes the blue light to make it green light. A detailed description thereof will be described later with reference to fig. 10. At least one of the first to third inks 330 to 350 may include quantum dots. Among them, the ink including quantum dots is called quantum dot ink.
In addition, as shown, the inks 330, 340, 350 are ejected such that the upper surface of the bank 380 is higher than the upper surface of the inks 330, 340, 350. This is, for example, to prevent the first ink 330 from exceeding the corresponding first ink ejection area TA1 and thereby affecting the adjacent second ink ejection area TA2. Since the first ink 330 and the second ink 340 are of mutually different kinds, the first ink 330 and the second ink 340 must not be mixed with each other. Therefore, the first ink 330 should not be ejected to the second ink ejection area TA2.
On the other hand, when the inks 330, 340, 350 are ejected to the ink ejection areas TA1, TA2, TA3, some of the inks 330a, 340a may be erroneously dropped to areas other than the ink ejection areas TA1, TA2, TA3. That is, a part of the ink 330a, 340a may be erroneously dropped onto the sacrificial pattern 410.
Referring to fig. 1 to 5, a first overlay pattern 451 is formed on the inks 330, 340, 350 of the ink ejection areas TA1, TA2, TA3, and a second overlay pattern 452 is formed on the sacrificial pattern 410 (S40).
Specifically, the second cover pattern 452 is mainly formed on the upper surface 410u of the sacrificial pattern 410, and is hardly formed on the side 410s of the sacrificial pattern 410. In addition, the first cover pattern 451 is formed not to be higher than the sacrificial pattern 410. That is, the upper surface 410u of the sacrificial pattern 410 is higher than the upper surface 451u of the first cover pattern 451 (refer to reference numeral H1). Accordingly, at least a portion of the side 410s of the sacrificial pattern 410 is exposed.
In order to form the first and second cover patterns 451 and 452 in this manner, a Plasma enhanced chemical vapor deposition (Plasma-enhanced chemical vapor deposition, PECVD) method may be used, for example, but is not limited thereto. The first and second cover patterns 451 and 452 may be, for example, oxide films, nitride films, or oxynitride films, but are not limited thereto.
As shown, since a portion of the ink 330a, 340a is erroneously dropped on the sacrificial pattern 410, if the second cover pattern 452 is formed on the sacrificial pattern 410, the erroneously dropped ink 330a, 340a can be located between the sacrificial pattern 410 and the second cover pattern 452.
Referring to fig. 1, 6 and 7, the sacrificial pattern 410 and the second cover pattern 452 (refer to fig. 6) are removed to expose the upper surface 380u of the bank 380 (refer to fig. 7).
Specifically, the sacrificial pattern 410 may be removed using a liquid medicine. As the sacrificial pattern 410 is removed, the second cover pattern 452 on the sacrificial pattern 410 is also removed together. The erroneously dropped inks 330a, 340a located between the sacrificial pattern 410 and the second cover pattern 452 are also removed together.
Here, the chemical solution for removing the sacrificial pattern 410 uses a chemical solution having a higher selectivity for the sacrificial pattern 410 than the bank 380. That is, in the case where the bank 380 includes the first photosensitive material and the sacrificial pattern 410 includes the second photosensitive material, the selection ratio of the liquid medicine to the second photosensitive material should be higher with respect to the first photosensitive material. For example, the chemical may be tetramethylammonium hydroxide (Tetramethylammonium hydroxide, TMAH), but is not limited thereto.
As shown in fig. 5, the upper surface 410u of the sacrificial pattern 410 is configured to be higher than the upper surface 451u of the first cover pattern 451, or the upper surface of the first cover pattern 451 is configured to be flush with the upper surface 380u of the bank 380 or lower than the upper surface 380u of the bank 380. Accordingly, since at least a portion of the side surface 410s of the sacrificial pattern 410 is exposed, the sacrificial pattern 410 can be easily removed by the chemical solution.
Further, since the first cover pattern 451 is disposed on the ink 330, 340, 350, the ink 330, 340, 350 is not damaged by the chemical liquid.
According to the method of manufacturing a display device according to the first embodiment of the present invention, the erroneously dropped inks 330a, 340a can be easily removed by the sacrificial pattern 410. Since an additional repair process using a laser or the like can be omitted or minimized, a yield drop caused by an increase in repair process time can be prevented.
Fig. 8 is a diagram for explaining a manufacturing method of a display device according to a second embodiment of the present invention. For convenience of explanation, the differences from those explained with reference to fig. 1 to 7 will be mainly explained.
In the manufacturing method of the display device according to the first embodiment of the present invention, regarding the S40 step of fig. 1, when the first cover pattern 451 is formed on the ink 330, 340, 350, the upper surface 451u of the first cover pattern 451 and the upper surface 380u of the bank 380 may be located at the same height (refer to fig. 5). Therefore, even after the sacrificial pattern 410 is removed, the upper surface 451u of the first cover pattern 451 and the upper surface 380u of the bank 380 can be located at the same height (refer to fig. 7).
On the other hand, in the manufacturing method of the display device according to the second embodiment of the present invention, regarding the S40 step of fig. 1, when the first cover pattern 451 is formed on the ink 330, 340, 350, the upper surface 451u of the first cover pattern 451 may be formed lower than the upper surface 380u of the bank 380. If the first cover pattern 451 is formed in this manner, the boundary surface between the bank 380 and the sacrificial pattern 410 is exposed, and thus the sacrificial pattern 410 can be removed more easily by the chemical solution when the sacrificial pattern 410 is removed. If the sacrificial pattern 410 is removed, it may be formed as a cross section as shown in fig. 8. That is, the upper surface 451u of the first cover pattern 451 and the upper surface 380u of the dike 380 may differ by a given height H2.
Fig. 9 is a diagram for explaining a manufacturing method of a display device according to a third embodiment of the present invention. For convenience of explanation, the differences from those explained with reference to fig. 1 to 7 will be mainly explained.
Referring to fig. 9, an additional cover film 393 may be formed over the result of fig. 7. That is, an additional cover film 393 may be formed on the upper surface 380u of the exposed bank 380 and the upper surface 451u of the first cover pattern 451. The additional coating film 393 may be an oxide film, a nitride film, or an oxynitride film. If both the first cover pattern 451 and the additional cover layer 393 are inorganic, the portion of the first cover pattern 451 in contact with the additional cover film 393 may constitute an inorganic-inorganic bond, and the inflow of moisture or air from the outside may be effectively blocked.
Fig. 10 is a cross-sectional view showing a part of a display device manufactured by the manufacturing method of a display device according to the third embodiment of the present invention. Fig. 10 shows a first substrate (or color conversion substrate) 30a in the display device.
Referring to fig. 10, a first light transmitting area TA1, a second light transmitting area TA2, a third light transmitting area TA3, a first light shielding area BA1, a second light shielding area BA2, and a third light shielding area BA3 are defined in the substrate 310. The first to third light transmitting areas TA1, TA2, TA3 correspond to the ink ejection areas TA1, TA2, TA3 of fig. 2.
The substrate 310 is provided with a first color filter 231, a second color filter 233, and a third color filter 235.
The first color filter 231 disposed in the first light-transmitting region TA1 may selectively transmit light of a first color (e.g., blue light) and block or absorb light of a second color (e.g., red light) and light of a third color (e.g., green light). The first color filter 231 may be a blue color filter (blue color filter) and may include a blue colorant (blue pigment) such as blue dye (blue dye) or blue pigment (blue pigment). The coloring material in the present specification is a concept including both dye (dye) and pigment (pigment).
The second color filter 233 disposed at the second light transmitting region TA2 may block or absorb light of the first color (e.g., blue light). That is, the second color filter 233 can function as a blue light blocking filter that blocks blue light. The second color filter 233 may selectively transmit light of a second color (e.g., red light) and block or absorb light of a first color (e.g., blue light) and light of a third color (e.g., green light). The second color filter 233 may be a red color filter (red color filter) and may include a red pigment (red color) such as a red dye (blue dye) or a red pigment (red pigment).
The third color filter 235 disposed at the third light transmitting region TA3 may block or absorb the light of the first color (e.g., blue light). That is, the third color filter 235 can also function as a blue blocking color filter. The third color filter 235 may selectively transmit light of a third color (e.g., green light) and block or absorb light of a first color (e.g., blue light) and light of a second color (e.g., red light). The third color filter 235 may be a green color filter (red color filter) and may include a green colorant (red color) such as green dye (green dye) or green pigment (green pigment).
The first to third light shielding members 221, 222, 223 may be formed on the color patterns 251, 252, 253.
The first cover layer 391 may be conformally (conformally) formed on the first to third color filters 231, 233, 235, the first to third light shielding members 221, 222, 223. The first cover layer 391 can prevent the colored patterns 251, 252, 253, the first to third light shielding members 221, 222, 223, and the like from being damaged or contaminated by the infiltration of impurities such as moisture or air from the outside. The first cover layer 391 can prevent the coloring material included in the first color filter 231, the second color filter 233, and the third color filter 235 from diffusing to a different structure from the first color filter 231, the second color filter 233, and the third color filter 235, for example, the first wavelength conversion pattern 340, the second wavelength conversion pattern 350, and the like. In some embodiments, the first cover layer 391 may be composed of an inorganic substance. For example, the first capping layer 391 may be formed including silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, silicon oxynitride, and the like.
The bank 380 may be located on the first to third light-shielding areas BAl, BA2, BA3. The shape of the bank 380 in plan view may be a lattice shape.
A light-transmitting pattern 330 (corresponding to the first ink 330 of fig. 4) is formed on the first color filter 231 of the first light-transmitting region TA 1. The light-transmitting pattern 330 may be composed of a first base resin 331 and a first diffuser 333. The first base resin 331 is composed of a material having high light transmittance, and may be an organic material such as an epoxy-based resin, an acrylic-based resin, a cardo (cardo) based resin, or an imide-based resin, for example. The first scatterer 333 may be a light scattering particle, and may be, for example, a metal oxide particle or an organic particle. Examples of the metal oxide include titanium oxide (TiO 2), zirconium oxide (ZrO 2), aluminum oxide (Al 2O 3), indium oxide (In 2O 3), zinc oxide (ZnO), and tin oxide (SnO 2), and examples of the material of the organic particles include acrylic resin and urethane resin. The first scatterer 333 may not substantially convert the wavelength of the light transmitted through the light transmission pattern 330 and scatter the light in a random direction regardless of the incident direction of the incident light.
The light-transmitting pattern 330 may transmit incident light. The incident light is filtered by the red/green light component and emitted as blue light while passing through the light-transmitting pattern 330 and the first color filter 231.
A first wavelength conversion pattern 340 (corresponding to the second ink 340 of fig. 4) is formed on the second color filter 233 of the second light transmitting region TA2. The first wavelength conversion pattern 340 includes a second base resin 341, a second scatterer 343, and a first wavelength changer 345.
The second base resin 341 may be the same substance as the first base resin 331, or may contain at least one of substances illustrated as constituent substances of the first base resin 331. The second scatterer 343 may be the same substance as the first scatterer 333, or may contain at least one of substances illustrated as constituent substances of the first scatterer 333.
The first wavelength shifter 345 may convert or shift the peak wavelength of the incident light to another specific peak wavelength. The first wavelength shifter 345 may convert incident light (e.g., blue light) into red light having a single peak wavelength in a range of about 610nm to about 650nm and emit the same.
Examples of the first wavelength changer 345 include quantum dots, quantum rods, and phosphors. For example, quantum dots may emit particulate matter of a particular color as electrons transition from the conduction band to the valence band.
The quantum dots may be semiconductor nanocrystal materials. The quantum dots may have a specific band gap according to their composition and size, and emit light having an inherent wavelength after absorbing the light. Examples of the semiconductor nanocrystals of the quantum dot include group IV nanocrystals, group II-VI compound nanocrystals, group III-V compound nanocrystals, group IV-VI nanocrystals, and combinations thereof.
The group II-VI compound may be selected from the group consisting of: a binary compound selected from the group consisting of CdSe, cdTe, znS, znSe, znTe, znO, hgS, hgSe, hgTe, mgSe, mgS and mixtures thereof; a ternary element compound selected from the group consisting of InZnP, agInS, cuInS, cdSeS, cdSeTe, cdSTe, znSeS, znSeTe, znSTe, hgSeS, hgSeTe, hgSTe, cdZnS, cdZnSe, cdZnTe, cdHgS, cdHgSe, cdHgTe, hgZnS, hgZnSe, hgZnTe, mgZnSe, mgZnS and mixtures thereof; and a four element compound selected from the group consisting of HgZnTeS, cdZnSeS, cdZnSeTe, cdZnSTe, cdHgSeS, cdHgSeTe, cdHgSTe, hgZnSeS, hgZnSeTe, hgZnSTe and mixtures thereof.
The III-V compound may be selected from the group consisting of: a binary compound selected from the group consisting of GaN, gaP, gaAs, gaSb, alN, alP, alAs, alSb, inN, inP, inAs, inSb and mixtures thereof; a ternary element compound selected from the group consisting of GaNP, gaNAs, gaNSb, gaPAs, gaPSb, alNP, alNAs, alNSb, alPAs, A1PSb, inGaP, inNP, inAlP, inNAs, inNSb, inPAs, inPSb, gaAlNP and mixtures thereof; and a four element compound selected from the group consisting of GaAlNAs, gaAlNSb, gaAlPAs, gaAlPSb, gaInNP, gaInNAs, gaInNSb, gaInPAs, gaInPSb, inAlNP, inAlNAs, inAlNSb, inAlPAs, inAlPSb and mixtures thereof.
The group IV-VI compound may be selected from the group consisting of: a binary compound selected from the group consisting of SnS, snSe, snTe, pbS, pbSe, pbTe and mixtures thereof; a ternary element compound selected from the group consisting of SnSeS, snSeTe, snSTe, pbSeS, pbSeTe, pbSTe, snPbS, snPbSe, snPbTe and mixtures thereof; and a four-element compound selected from the group consisting of SnPbSSe, snPbSeTe, snPbSTe and mixtures thereof. The group IV element may be selected from the group consisting of Si, ge, and a mixture thereof. The group IV compound may be a binary mixture selected from the group consisting of SiC, siGe, and a mixture thereof.
At this time, the binary, ternary, or quaternary element compound may be present in the particle at a uniform concentration, or may be present in the same particle in a state in which the concentration distribution is partially different. In addition, it is also possible to have a core/shell structure in which one quantum dot surrounds another quantum dot. The interface of the core and the shell may have a concentration gradient (gradient) in which the concentration of the element present in the shell is lower toward the center.
In some embodiments, the quantum dots may have a core-shell structure comprising a core of the foregoing nanocrystals and a shell surrounding the core. The shell of the quantum dot can function as a protective layer for preventing chemical modification of the core to maintain semiconductor characteristics and/or a charging layer (charging layer) for imparting electrophoretic characteristics to the quantum dot. The shell may be a single layer or multiple layers. The interface of the core and the shell may have a concentration gradient (gradient) in which the concentration of the element present in the shell is lower toward the center. Examples of the quantum dot shell include metal or nonmetal oxides, semiconductor compounds, and combinations thereof.
For example, the metal or nonmetal oxide may be exemplified by binary compounds such as SiO2, al2O3, tiO2, znO, mnO, mn O3, mn3O4, cuO, feO, fe O3, fe3O4, coO, co3O4, niO, or ternary compounds such as MgAl2O4, coFe2O4, niFe2O4, and CoMn2O4, but the present invention is not limited thereto.
Further, cdS, cdSe, cdTe, znS, znSe, znTe, znSeS, znTeS, gaAs, gaP, gaSb, hgS, hgSe, hgTe, inAs, inP, inGaP, inSb, alAs, alP, alSb and the like can be exemplified as the semiconductor compound, but the present invention is not limited thereto.
A second wavelength conversion pattern 350 (corresponding to the third ink 350 of fig. 4) is formed on the third color filter 235 of the third light transmitting region TA3.
The second wavelength conversion pattern 350 includes a third base resin 351, a third scatterer 353, and a second wavelength changer 355.
The third base resin 351 may be the same material as the first base resin 331, or may include at least one of the materials illustrated as constituent materials of the first base resin 331. The third scatterer 353 may be the same material as the first scatterer 333, or may include at least one of the materials illustrated as the constituent materials of the first scatterer 333.
The second wavelength changer 355 is capable of converting or changing the peak wavelength of the incident light to another specific peak wavelength. The second wavelength changer 355 may convert incident light (e.g., blue light) into green light having a peak wavelength in a range of about 510nm to about 550nm and emit.
Examples of the second wavelength changer 355 include quantum dots, quantum rods, and phosphors. For example, quantum dots may be particulate matter that emits a particular color as electrons migrate from the conduction band to the valence band.
The first cover pattern 451 is formed on the light-transmitting pattern 330, the first wavelength conversion pattern 340, and the second wavelength conversion pattern 350, respectively. The upper surface of the first cover pattern 451 may be configured to be flush with the upper surface of the bank 380 or lower than the upper surface of the bank 380. The second capping layer 393 (corresponding to the additional capping film 393 of fig. 9) may be located on the first capping pattern 451, the light-transmitting pattern 330, the first wavelength conversion pattern 340, and the second wavelength conversion pattern 350.
The first and second cover patterns 451 and 393 may seal the light transmission pattern 330, the first wavelength conversion pattern 340, and the second wavelength conversion pattern 350. Accordingly, it is possible to prevent impurities such as moisture or air from penetrating from the outside to damage or contaminate the light-transmitting pattern 330, the first wavelength conversion pattern 340, and the second wavelength conversion pattern 350.
Fig. 11 is a cross-sectional view for explaining a display device manufactured using the first substrate (color conversion substrate) shown in fig. 10.
Referring to fig. 11, the first substrate 30a and the second substrate 10 formed with the display image, which will be described using fig. 10, are coupled to each other. The filler material 70 may be located in a space between the first substrate 30a and the second substrate 10.
Since the first substrate 30a has been described using fig. 10, a description thereof is omitted.
In the second substrate 10, the first light emitting region LA1, the second light emitting region LA2, the third light emitting region LA3, and the non-light emitting region NLA are defined on the base 110, if the second substrate 10 is described. The first, second, and third light emitting areas LA1, LA2, and LA3 correspond to the first to third light transmitting areas TA1, TA2, and TA3 of the first substrate 30a, and the non-light emitting area NLA corresponds to the light shielding areas BA1, BA2, and BA3 of the first substrate 30a.
The first switching element T1 and the first light emitting element ED1 are located in the first light emitting area LA1, the second switching element T2 and the second light emitting element ED2 are located in the second light emitting area LA2, and the third switching element T3 and the third light emitting element ED3 are located in the third light emitting area LA3.
The first light emitting element ED1 includes a first anode electrode AE1, a light emitting layer OL, and a cathode electrode CE, the second light emitting element ED2 includes a second anode electrode AE2, a light emitting layer OL, and a cathode electrode CE, and the third light emitting element ED3 includes a third anode electrode AE3, a light emitting layer OL, and a cathode electrode CE.
The insulating film 130 may be positioned at the first, second, and third switching elements T1, T2, and T3. In some embodiments, the insulating film 130 may be a planarization film.
The first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3 are located on the insulating film 130. The pixel defining film 150 may be positioned on the first, second, and third anode electrodes AE1, AE2, AE 3. The pixel defining film 150 may include an opening exposing the first anode electrode AE1, an opening exposing the second anode electrode AE2, and an opening exposing the third anode electrode AE3, and may define the first light emitting region LA1, the second light emitting region LA2, the third light emitting region LA3, and the non-light emitting region NLA.
The first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3 may be located on the insulating film 130. The first anode electrode AE1 may be located within the first light emitting area LA1, at least a portion of which extends to the non-light emitting area NLA. The first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3 may be reflective electrodes, and in this case, the first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3 may be metal layers containing a metal such as Ag, mg, al, pt, pd, au, ni, nd, ir and Cr, for example. In another embodiment, the first, second, and third anode electrodes AE1, AE2, AE3 may further include a metal oxide layer laminated on the metal layer. In an exemplary embodiment, the first, second and third anode electrodes AE1, AE2 and AE3 may also have a 2-layer configuration of ITO/Ag, ag/ITO, ITO/Mg, ITO/MgF or a multi-layer configuration such as ITO/Ag/ITO.
The light emitting layer OL may be located on the first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE 3. The light emitting layer OL may have a shape of a continuous film formed across the plurality of light emitting regions LA1, LA2, LA3, LA4, LA5, LA6 and the non-light emitting region NLA.
The cathode electrode CE may have semi-permeability or permeability. In the case where the cathode electrode CE has the semi-permeability, the cathode electrode CE may contain Ag, mg, cu, al, pt, pd, au, ni, nd, ir, cr, li, ca, liF/Ca, liF/Al, mo, ti, or a compound or mixture thereof, for example, a mixture of Ag and Mg. In addition, in the case where the thickness of the cathode electrode CE is several tens to several hundreds angstroms, the cathode electrode CE may have semi-permeability.
In case the cathode electrode CE is transparent, the cathode electrode CE may comprise a transparent conductive oxide (ransparent conductive oxide, TCO). For example, the cathode electrode CE may include WxOx (tungsten oxide), tiO2 (titanium oxide), ITO (indium tin oxide), IZO (indium zinc oxide), znO (zinc oxide), ITZO (indium tin zinc oxide), mgO (magnesium oxide), and the like.
The light L1 emitted from the light emitting layer OL is blue light, and includes a long wavelength component, an intermediate wavelength component, and a short wavelength component. Therefore, the final light emitting layer OL is enabled to emit blue light having a light emission peak (peak) of a slightly wide distribution (broad) as the light (L1).
A thin film sealing layer 170 is disposed on the cathode electrode CE. The thin film sealing layer 170 is commonly disposed in the first, second, third, and non-light emitting areas LA1, LA2, LA3, and NLA.
The thin film sealing layer 170 may include a first sealing inorganic film 171, a sealing organic film 173, and a second sealing inorganic film 175 sequentially laminated on the cathode electrode CE. The first sealing inorganic film 171 and the second sealing inorganic film 175 may be each composed of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, silicon oxynitride (SiON), or the like. The sealing organic film 173 may be composed of an acrylic resin, a methacrylic resin, polyisoprene, a vinyl resin, an epoxy resin, a urethane resin, a cellulose resin, a perylene resin, or the like.
In addition, the panel light shielding member 190 may be positioned on the film sealing layer 170. The panel light shielding member 190 may be located on the thin film sealing layer 170 and within the non-light emitting region NLA. The panel light shielding member 190 can prevent color mixing due to intrusion of light between adjacent light emitting regions, and thus can further improve color reproducibility.
Such a second substrate 10 and the first substrate 30a described with reference to fig. 10 are bonded to each other. The filler material 70 may be located in a space between the second substrate 10 and the first substrate 30a. The filler 70 may be made of a material that transmits light. In some embodiments, the filler material 70 may be composed of an organic substance. The filler 70 may be composed of, for example, a silicon (Si) organic substance, an epoxy organic substance, or the like, but is not limited thereto.
The light L1 generated in the first light emitting element ED1 passes through the light transmission pattern 330 of the first substrate 30a and the first color filter 231 and is emitted as blue light. The light L1 generated in the second light emitting element ED2 passes through the first wavelength conversion pattern 340 of the first substrate 30a and the second color filter 233 and is emitted as red light. The light L1 generated in the third light emitting element ED3 passes through the second wavelength conversion pattern 350 of the first substrate 30a and the third color filter 235 to be emitted as green light.
Fig. 12 is a sectional view for explaining a display device according to another embodiment of the present invention. For convenience of explanation, substantially the same contents as those explained using fig. 10 and 11 are omitted.
Referring to fig. 12, in the first substrate 10b, not only the first light emitting element EDl, the second light emitting element ED2, and the third light emitting element ED3, but also the light transmission pattern 330, the first wavelength conversion pattern 340, and the second wavelength conversion pattern 350, the color filters 231a, 233a, 235a, the first cover pattern 451, the color filter 250a, and the light shielding member 220a are formed on the base 110.
It may be that the second substrate 30b including the base 310 is located on the first substrate 10b, and the filler material 70 is located between the first substrate 10b and the second substrate 30 b.
Although the embodiments of the present invention have been described with reference to the above and drawings, it will be understood by those of ordinary skill in the art that the present invention can be practiced in other specific ways without changing its technical ideas or essential features. Accordingly, it should be understood that the above-described embodiments are illustrative in all respects, rather than restrictive.
Claims (18)
1. A method of manufacturing a display device, comprising:
forming a bank defining an ink ejection area on a substrate;
forming a sacrificial pattern on the bank;
ejecting ink onto the ink ejection area;
forming a first cover pattern on the ink of the ink ejection area and forming a second cover pattern on the sacrificial pattern; and
the sacrificial pattern and the second cover pattern are removed to expose an upper surface of the bank.
2. The method for manufacturing a display device according to claim 1, wherein,
ejecting the ink onto the ink ejection area includes: when ink is ejected onto the ink ejection area, ink that is erroneously dropped onto the sacrificial pattern is ejected,
removing the sacrificial pattern and the second cover pattern includes: and removing the ink which is erroneously dropped onto the sacrificial pattern together with the sacrificial pattern and the second cover pattern.
3. The method for manufacturing a display device according to claim 1, wherein,
ejecting ink onto the ink ejection area includes: ink is ejected such that the upper surface of the bank is higher than the upper surface of the ink.
4. The method for manufacturing a display device according to claim 3, wherein,
forming the first and second overlay patterns includes: at least a portion of a side of the sacrificial pattern is exposed by making an upper surface of the sacrificial pattern higher than an upper surface of the first cover pattern.
5. The method for manufacturing a display device according to claim 3, wherein,
forming the first and second overlay patterns includes: the first cover pattern is formed such that an upper surface of the first cover pattern is lower than an upper surface of the bank.
6. The method for manufacturing a display device according to claim 1, wherein,
the bank contains a first photosensitive material, the sacrificial pattern contains a second photosensitive material different from the first photosensitive material,
removing the sacrificial pattern and the second cover pattern includes: the sacrificial pattern is removed without removing the bank using a chemical solution having a higher selectivity ratio for the second photosensitive material relative to the first photosensitive material.
7. The method for manufacturing a display device according to claim 6, wherein,
the liquid medicine is TMAH, namely tetramethyl ammonium hydroxide.
8. The method for manufacturing a display device according to claim 1, wherein,
the first cover pattern and the second cover pattern include an oxide film, a nitride film, or a oxynitride film.
9. The method for manufacturing a display device according to claim 8, wherein,
forming the first and second overlay patterns includes: PECVD, plasma enhanced chemical vapor deposition, is utilized.
10. The manufacturing method of the display device according to claim 1, further comprising:
an additional coating film is formed on the upper surface of the first coating pattern formed in the ink ejection area and the exposed upper surface of the bank.
11. The manufacturing method of the display device according to claim 1, further comprising:
a color filter is formed on the substrate prior to forming the banks.
12. A method of manufacturing a display device, comprising:
forming a bank defining an ink ejection area on a substrate, the bank containing a first photosensitive substance;
forming a sacrificial pattern on the bank, the sacrificial pattern including a second photosensitive material different from the first photosensitive material;
ejecting quantum dot ink onto the ink ejection area, and ejecting quantum dot ink with false drops on the sacrificial pattern;
forming a first cover pattern on the quantum dot ink of the ink ejection region and forming a second cover pattern on the sacrificial pattern and the erroneously dropped quantum dot ink, and exposing at least a portion of a side surface of the sacrificial pattern by making an upper surface of the sacrificial pattern higher than an upper surface of the first cover pattern; and
the sacrificial pattern and the second cover pattern are removed to remove quantum dot ink erroneously dropped onto the sacrificial pattern, and the removal is performed with a chemical solution having a higher selectivity ratio of the second photosensitive material to the first photosensitive material.
13. The method for manufacturing a display device according to claim 12, wherein,
the first cover pattern and the second cover pattern include an oxide film, a nitride film, or a oxynitride film.
14. The method for manufacturing a display device according to claim 13, wherein,
forming the first and second overlay patterns includes: PECVD, plasma enhanced chemical vapor deposition, is utilized.
15. The method for manufacturing a display device according to claim 12, wherein,
forming the first and second overlay patterns includes: the first cover pattern is formed such that an upper surface of the first cover pattern is lower than an upper surface of the bank.
16. The method for manufacturing a display device according to claim 12, wherein,
the liquid medicine is TMAH, namely tetramethyl ammonium hydroxide.
17. A display device, comprising:
a bank formed on the substrate and defining an ink ejection area;
an ink formed on the ink ejection area; and
a cover pattern formed on the ink,
the upper surface of the cover pattern is flush with or lower than the upper surface of the bank.
18. The display device of claim 17, wherein,
the display device further includes an additional cover film provided on an upper surface of the bank and an upper surface of the cover pattern.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020210182190A KR20230092632A (en) | 2021-12-17 | 2021-12-17 | Display device and manufacturing method thereof |
| KR10-2021-0182190 | 2021-12-17 |
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| Publication Number | Publication Date |
|---|---|
| CN116322240A true CN116322240A (en) | 2023-06-23 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202211205338.1A Pending CN116322240A (en) | 2021-12-17 | 2022-09-29 | Display device and method for manufacturing the same |
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| KR (1) | KR20230092632A (en) |
| CN (1) | CN116322240A (en) |
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| JP4469872B2 (en) | 2007-04-27 | 2010-06-02 | 東京エレクトロン株式会社 | Coating method and pattern forming method |
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