KR20230077041A - Method of removing the deposition of collimator for sputter equipment in semiconductor manufacturing - Google Patents

Method of removing the deposition of collimator for sputter equipment in semiconductor manufacturing Download PDF

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KR20230077041A
KR20230077041A KR1020210163862A KR20210163862A KR20230077041A KR 20230077041 A KR20230077041 A KR 20230077041A KR 1020210163862 A KR1020210163862 A KR 1020210163862A KR 20210163862 A KR20210163862 A KR 20210163862A KR 20230077041 A KR20230077041 A KR 20230077041A
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collimator
sputter equipment
minutes
deposits
semiconductor manufacturing
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KR1020210163862A
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Korean (ko)
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김창관
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주식회사 큐라텍
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Publication of KR20230077041A publication Critical patent/KR20230077041A/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus

Abstract

본 발명은 sputter 장비에 사용되는 collimator에 증착된 증착물을 부품에 손상을 주지않고 제거하기위한 반도체 제조시 sputter 장비용 collimator의 증착물의 제거방법에 관한 발명으로 증착공정을 다회 거치며 증착물이 증착되어 효율이 하락한 collimator에 손상을 주지않고 증착된 증착물을 제거하기위해 초음파 세척기로 아세톤용액에 4~6분, 물에 4~10분간 세척하는 불순물 제거단계와 불산에 4~8분간 침지하는 산화막 제거단계와 650℃~750℃로 50~70초간 가열 후 급랭시키는 열처리단계와 5~6시간 60℃~70℃의 가열을 동반한 질산(4) : 황산(2) : 물(4)의 비율로 혼합된 부식액을 사용하는 에칭단계를 거쳐 sputter 장비에 사용되는 collimator에 증착된 증착물을 부품에 손상을 주지않고 제거할 수 있는 반도체 제조시 sputter 장비용 collimator의 증착물의 제거방법을 제공한다.The present invention relates to a method for removing deposits deposited on a collimator used in a sputter equipment without damaging components, and a method for removing deposits from a collimator for sputter equipment during semiconductor manufacturing. In order to remove deposited deposits without damaging the fallen collimator, the impurity removal step of washing in acetone solution for 4 to 6 minutes and water for 4 to 10 minutes with an ultrasonic cleaner and the oxide film removal step of immersing in hydrofluoric acid for 4 to 8 minutes and 650 Heat treatment step of heating to ℃ ~ 750 ℃ for 50 ~ 70 seconds and then rapidly cooling, accompanied by heating at 60 ℃ ~ 70 ℃ for 5 ~ 6 hours, nitric acid (4): sulfuric acid (2): corrosion solution mixed in the ratio of water (4) Provides a method for removing the deposits of the collimator for sputter equipment during semiconductor manufacturing that can remove the deposits deposited on the collimator used in the sputter equipment without damaging the parts through the etching step using.

Description

반도체 제조시 sputter 장비용 collimator의 증착물의 제거방법{Method of removing the deposition of collimator for sputter equipment in semiconductor manufacturing}Method of removing the deposition of collimator for sputter equipment in semiconductor manufacturing}

본 발명은 sputter 장비에 사용되는 collimator에 증착된 증착물을 부품에 손상을 주지않고 제거하기위한 반도체 제조시 sputter 장비용 collimator의 증착물의 제거방법에 관한 발명이다.The present invention relates to a method for removing deposits of a collimator for sputter equipment during semiconductor manufacturing for removing deposits deposited on collimators used in sputter equipment without damaging components.

반도체 제조장비 중 sputter 장비에는 chamber 내에 collimator라는 반도체 장비 부품이 사용된다. collimator는 증착공정(sputtering)에서 증착한 박막의 밑면과 벽면의 두께를 최대한 동일한 두께로 형성되는 것을 돕기위한 장비 부품으로, 웨이퍼에 티타늄 혹은 질화티타늄의 증착시 티타늄 합금으로 제조된 collimator를 사용한다. 증착공정을 반복함에 따라 collimator에 포획된 티타늄과 질화티타늄의 증착으로 collimator의 구멍이 좁아져 증착공정의 효율이 하락한다. 이렇게 오염된 collimator는 장비의 수명을 단축시키기 때문에 증착된 증착물을 제거해야하는데, 이때 과도한 제거공정을 거칠 경우 collimator가 손상되는 문제가 발생할 수 있어, collimator에 손상을 주지않고 증착된 증착물을 제거할 수 있는 반도체 제조시 sputter 장비용 collimator의 증착물의 제거방법이 필요한 실정이다.Among semiconductor manufacturing equipment, sputter equipment uses a semiconductor equipment component called a collimator in the chamber. The collimator is an equipment component to help form the thickness of the bottom and wall of the thin film deposited in the deposition process (sputtering) to the same thickness as possible. When depositing titanium or titanium nitride on a wafer, a collimator made of titanium alloy is used. As the deposition process is repeated, the hole of the collimator narrows due to the deposition of titanium and titanium nitride captured in the collimator, reducing the efficiency of the deposition process. Since the contaminated collimator shortens the lifespan of the equipment, the deposited deposit must be removed. At this time, if an excessive removal process is performed, the collimator may be damaged, so the deposited deposit can be removed without damaging the collimator. There is a need for a method of removing deposits of a collimator for sputter equipment when manufacturing semiconductors.

본 발명은 collimator가 증착공정을 다회 거치며 증착물이 증착되어 효율이 하락하는 문제와, 오염된 collimator의 증착물의 제거공정 시 발생할 수 있는 collimator 손상 문제를 해결하고자 한다.The present invention is to solve the problem that the collimator goes through the deposition process multiple times and the deposit is deposited to reduce the efficiency and the problem of collimator damage that may occur during the removal process of the deposit from the contaminated collimator.

초음파 세척기로 아세톤용액에 4~6분, 물에 4~10분간 세척하는 불순물 제거단계와 불산에 4~8분간 침지하는 산화막 제거단계와 650℃~750℃로 50~70초간 가열 후 급랭시키는 열처리단계와 5~6시간 60℃~70℃의 가열을 동반한 질산(4) : 황산(2) : 물(4)의 비율로 혼합된 부식액을 사용하는 에칭단계를 거쳐 sputter 장비에 사용되는 collimator에 증착된 증착물을 부품에 손상을 주지않고 제거할 수 있는 반도체 제조시 sputter 장비용 collimator의 증착물의 제거방법을 제공하여 상기 문제를 해결하고자 한다.The impurity removal step of washing in acetone solution for 4 to 6 minutes and water for 4 to 10 minutes with an ultrasonic cleaner, the oxide film removal step of immersing in hydrofluoric acid for 4 to 8 minutes, and the heat treatment of heating at 650℃ to 750℃ for 50 to 70 seconds and then rapidly cooling Through the etching step using the caustic solution mixed in the ratio of nitric acid (4): sulfuric acid (2): water (4) accompanied by heating at 60 ℃ ~ 70 ℃ for 5 to 6 hours, the collimator used in the sputter equipment It is intended to solve the above problem by providing a method of removing the deposited material of a collimator for sputter equipment during semiconductor manufacturing that can remove the deposited material without damaging the component.

본 발명을 통해 collimator의 증착물을 제거할 경우, 장비의 수명을 증가시키고 보다 다회차 사용이 가능하여 제조비용이 감소하고 산업폐기물의 발생을 억제하여 환경오염을 방지하는 효과가 있다.When the deposits of the collimator are removed through the present invention, the life of the equipment is increased and it can be used more often, thereby reducing manufacturing costs and preventing environmental pollution by suppressing the generation of industrial waste.

본 발명의 구체적인 내용을 설명함에 앞서 본 발명의 실시예에 이용된 장비 부품의 차이와 같은 현장에 익숙한 실무자의 유동적인 판단에 따른 차이에 한계를 두지 않음을 명시한다.Prior to explaining the specific details of the present invention, it is specified that there is no limit to differences according to the flexible judgment of practitioners familiar with the field, such as differences in equipment parts used in the embodiments of the present invention.

본 발명의 반도체 제조시 sputter 장비용 collimator의 증착물의 제거방법에 있어 증착물이 증착된 제거대상인 collimator는 티타늄 97.32%, 규소 1.69%, 알루미늄 0.42%로 구성된 티타늄합금소재로 제조된 반도체 장비부품으로 제거대상인 증착물은 티타늄 혹은 질화티타늄 혹은 그 혼합물로 구성되어있다. 증착물의 제거공정은 불순물 제거단계, 산화막 제거단계, 열처리 단계, 에칭 단계를 갖는다.In the method of removing the deposited material of the collimator for sputter equipment during semiconductor manufacturing of the present invention, the collimator, which is a removal target on which the deposited material is deposited, is a semiconductor equipment component made of a titanium alloy material composed of 97.32% titanium, 1.69% silicon, and 0.42% aluminum. The deposits consist of titanium or titanium nitride or mixtures thereof. The deposition material removal process includes an impurity removal step, an oxide film removal step, a heat treatment step, and an etching step.

불순물 제거단계는 산화막 제거를 시행함에 앞서 오염된 collimator의 표면에 불순물을 제거하기위해 초음파 세척기로 아세톤용액에 4~6분, 물에 4~10분간 세척한다. 다만, 본 발명의 발명자가 실시함에 있어서 초음파 세척기를 사용하였으나, 장비의 이용에 있어 그 장비를 초음파 세척기로 제한하지 않으며 환경과 여건에 따라 유동적으로 활용될 수 있음을 명시한다.In the impurity removal step, in order to remove impurities on the surface of the contaminated collimator prior to removing the oxide film, wash with an ultrasonic cleaner for 4 to 6 minutes in acetone solution and 4 to 10 minutes in water. However, although the inventors of the present invention used an ultrasonic cleaner in the practice, it is specified that the equipment can be used flexibly depending on the environment and conditions without limiting the equipment to the ultrasonic cleaner.

산화막 제거단계는 최종적으로 화학적으로 부식작용을 이용해 습식으로 증착물제거를 진행하는 에칭단계에 앞서 산화막이 부식액의 작용을 방해하고 증착물을 보호하는 것을 방지하기 위해 수행한다. 산화막 제거단계는 오염된 collimator를 불산에 4~8분간 침지하여 진행한다. 본 발명의 실시에 있어 오염된 collimator를 불산에 침지할 경우 산화막의 제거되며 얇은 비늘과 같은 형태로 증착된 증착물이 산화막과 함께 표면이 탈락함을 확인할 수 있다. 하지만 장시간 불산에 침지할 경우 증착물 뿐 아니라 collimator 본체에도 손상이 가해지기 때문에 본 발명은 4~8분으로 침지시간을 제한하였다.The oxide film removal step is performed to prevent the oxide film from interfering with the action of the etchant and protecting the deposited material prior to the etching step of finally removing the deposited material in a wet manner using a chemical corrosion action. The oxide film removal step is performed by immersing the contaminated collimator in hydrofluoric acid for 4 to 8 minutes. In the practice of the present invention, when the contaminated collimator is immersed in hydrofluoric acid, the oxide film is removed, and it can be seen that the deposited material deposited in the form of thin scales is removed from the surface together with the oxide film. However, when immersed in hydrofluoric acid for a long time, damage is applied to the collimator body as well as the deposited material, so the immersion time is limited to 4 to 8 minutes in the present invention.

열처리단계는 열처리 후 급성냉각을 시켜 오염된 collimator와 증착물 간에 크랙을 유도한다. 다만, 본 발명의 발명자가 실시함에 있어서 전기로를 사용하였으나, 장비의 이용에 있어 그 장비를 전기로로 제한하지 않으며 환경과 여건에 따라 유동적으로 활용될 수 있음을 명시한다. 오염된 collimator를 650℃~750℃로 50~70초간 가열 후 급랭시킨다. 본 발명의 실시에 있어 650℃보다 낮을 경우 그 효과성이 떨어지며, 750℃보다 높을 경우 증착물의 크랙유도에 효과적이나 collimator에 변형이 발생하는 문제가 발생하였다.In the heat treatment step, rapid cooling is performed after heat treatment to induce cracks between the contaminated collimator and the deposited material. However, although the inventor of the present invention used an electric furnace in the practice, it is specified that the equipment is not limited to the electric furnace in use and can be used flexibly depending on the environment and conditions. After heating the contaminated collimator at 650℃~750℃ for 50~70 seconds, cool it rapidly. In the practice of the present invention, when the temperature is lower than 650 ° C., the effectiveness is reduced, and when the temperature is higher than 750 ° C., it is effective in inducing cracks in the deposited material, but there is a problem that deformation occurs in the collimator.

에칭단계에서 부식액으로는 혼합용액을 사용하여 5~6시간 에칭공정을 진행한다. 또한, 에칭공정에서 전열기를 사용하여 60℃~70℃의 가열을 동시에 수행한다. 다만, 본 발명의 발명자가 실시함에 있어서 전열기를 사용하였으나, 장비의 이용에 있어 그 장비를 전열기로 제한하지 않으며 환경과 여건에 따라 유동적으로 활용될 수 있음을 명시한다. 부식액으로 사용되는 혼합용액은 질산(4) : 황산(2) : 물(4)의 비율로 혼합되었으며, 60℃~70℃로 5~6시간 가열을 동반한 에칭공정을 실시한다.In the etching step, an etching process is performed for 5 to 6 hours using a mixed solution as an etchant. In addition, in the etching process, heating of 60 ° C to 70 ° C is performed at the same time using an electric heater. However, although the inventor of the present invention used an electric heater in the practice, it is specified that the equipment can be used flexibly according to the environment and conditions without limiting the equipment to the electric heater. The mixed solution used as the caustic solution was mixed in a ratio of nitric acid (4): sulfuric acid (2): water (4), and an etching process accompanied by heating at 60 ° C to 70 ° C was performed for 5 to 6 hours.

상기 단계들을 거쳐 증착물이 제거된 오염된 collimator는 증착물이 떨어져 나간 단면의 다소간의 손상을 보여 무한히 사용할 수 없으나, 종래의 collimator의 재사용 빈도보다 월등히 높은 재사용 효율을 보인다.The contaminated collimator from which the deposits are removed through the above steps shows some damage to the cross section where the deposits are removed, so it cannot be used indefinitely, but shows a reuse efficiency that is significantly higher than the reuse frequency of conventional collimators.

Claims (1)

반도체 제조시 sputter 장비용 collimator의 증착물의 제거방법에있어 초음파 세척기로 아세톤용액에 4~6분, 물에 4~10분간 세척하는 불순물 제거단계; 불산에 4~8분간 침지하는 산화막 제거단계; 650℃~750℃로 50~70초간 가열 후 급랭시키는 열처리단계; 5~6시간 60℃~70℃의 가열을 동반한 질산(4) : 황산(2) : 물(4)의 비율로 혼합된 부식액을 사용하는 에칭단계;를 포함하는 반도체 제조시 sputter 장비용 collimator의 증착물의 제거방법Impurity removal step of washing in acetone solution for 4 to 6 minutes and water for 4 to 10 minutes with an ultrasonic cleaner in the method of removing deposits of the collimator for sputter equipment during semiconductor manufacturing; An oxide film removal step of immersing in hydrofluoric acid for 4 to 8 minutes; A heat treatment step of heating at 650 ° C to 750 ° C for 50 to 70 seconds and then rapidly cooling; Etching step using an etchant mixed in a ratio of nitric acid (4): sulfuric acid (2): water (4) accompanied by heating at 60℃ to 70℃ for 5 to 6 hours; collimator for sputter equipment during semiconductor manufacturing, including Method for removing deposits of
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