KR20230052195A - Large area monitoring apparatus - Google Patents

Abstract

A monitoring device capable of measuring a large area capable of easily diagnosing the performance of equipment in a semiconductor process or display process is disclosed. The monitoring device includes a protective layer, a substrate arranged in a space inside the protective layer, and at least one electronic device arranged on the substrate. Here, the electronic device has at least one sensor, and the monitoring device uses the sensor to obtain temperature, slope, light, vibration, voltage, current, power, and pressure of a pidgin located outside the monitoring device and the pidgin. The identifiable body is diagnosed by measuring at least one of the distances between the body and other elements, an intaglio structure or an embossed structure is formed on the substrate, and the intaglio structure is filled with a material having characteristics different from that of the substrate or the embossed structure It is formed of a material having characteristics different from those of the substrate.

Description

Monitoring device capable of measuring large area {LARGE AREA MONITORING APPARATUS}

The present invention relates to a monitoring device capable of measuring a large area.

Semiconductors and displays are being developed following the large-diameter trend. In manufacturing semiconductors and displays, maintaining process uniformity within semiconductor equipment is a key factor in reducing defects. The semiconductor device or the display device should ensure the same level of process uniformity in each process, but performance may change over time by repeating temperature elevation, RF power opening and closing, and pressure elevation.

Process variations occurring in the semiconductor equipment or the display equipment cause defects in wafers or glass substrates. However, until now, there is no technology capable of accurately monitoring changes in these process conditions.

KR10-2276278

An object of the present invention is to provide a monitoring device capable of measuring a large area that can easily diagnose the performance of equipment in a semiconductor process or display process.

In order to achieve the above object, the monitoring device according to an embodiment of the present invention includes a protective layer; a substrate arranged in a space inside the protective layer; and at least one electronic device arranged over the substrate. Here, the electronic device has at least one sensor, and the monitoring device uses the sensor to obtain temperature, slope, light, vibration, voltage, current, power, and pressure of a pidgin located outside the monitoring device and the pidgin. The identifiable body is diagnosed by measuring at least one of the distances between the body and other elements, an intaglio structure or an embossed structure is formed on the substrate, and the intaglio structure is filled with a material having characteristics different from that of the substrate or the embossed structure It is formed of a material having characteristics different from those of the substrate.

A monitoring device according to another embodiment of the present invention includes a protective layer; a substrate arranged in a space inside the protective layer; and at least one electronic device arranged over the substrate. Here, the electronic device has at least one sensor, and the monitoring device uses the sensor to obtain temperature, slope, light, vibration, voltage, current, power, and pressure of a pidgin located outside the monitoring device and the pidgin. The identifiable entity is diagnosed by measuring at least one of the distances between the entity and other elements, an intaglio structure or an embossed structure is formed on the protective layer, and the intaglio structure is filled with a material having characteristics different from those of the protective layer or the The embossed structure is formed of a material having properties different from those of the protective layer.

A monitoring device according to another embodiment of the present invention includes a protective layer; a substrate arranged in a space inside the protective layer; at least one electronic device arranged over the substrate; and a member arranged outside the protective layer and doubly protecting the electronic device together with the protective layer. Here, the electronic device has at least one sensor, and the monitoring device uses the sensor to obtain temperature, slope, light, vibration, voltage, current, power, and pressure of a pidgin located outside the monitoring device and the pidgin. At least one of the distances between the object and another device is measured to diagnose the object to be examined.

The monitoring device according to the present invention may improve the flatness of the monitoring device by forming an intaglio structure or an embossed structure on a printed circuit board or a protective layer. As a result, the temperature sensor arranged on the printed circuit board can come into close contact with the object to be measured, and measurement accuracy can be improved by compensating for the horizontality of the vibration sensor and the displacement sensor arranged on the printed circuit board. It is possible to prevent the RF sensor from being distorted in the axial direction of the piddling unit arranged thereon, and to improve the sensitivity of receiving light quantity of the optical sensor arranged on the printed circuit board, and to transmit/receive transmission and reception of the wireless communication device arranged on the printed circuit board. Sensitivity can be improved.

In addition, damage to the monitoring device or the semiconductor equipment may be prevented by preventing the monitoring device from being twisted from a robot device that automatically conveys the monitoring device.

1 is a diagram illustrating a monitoring device inserted into a chamber according to an embodiment of the present invention.
2 is a diagram illustrating a monitoring device arranged on an electrostatic chuck according to an embodiment of the present invention.
3 is a diagram illustrating a monitoring device according to an embodiment of the present invention.
4 to 9 are diagrams illustrating monitoring devices according to other embodiments of the present invention.
10 is a diagram illustrating problems that may occur in the structure of a large area measurement system.
FIG. 11 is a diagram showing a concave or embossed structure for reducing tensile and compressive stresses.
12 is a diagram illustrating tensile stress or compressive stress that may occur in a large area measuring device.
13 is a diagram illustrating an example of an error occurring due to stress during robot transportation.
14 to 16 are diagrams illustrating a decrease in measurement accuracy due to tensile stress.

Singular expressions used herein include plural expressions unless the context clearly dictates otherwise. In this specification, terms such as "consisting of" or "comprising" should not be construed as necessarily including all of the various components or steps described in the specification, and some of the components or some of the steps It should be construed that it may not be included, or may further include additional components or steps. In addition, terms such as "...unit" and "module" described in the specification mean a unit that processes at least one function or operation, which may be implemented as hardware or software or a combination of hardware and software. .

The present invention relates to a monitoring device for effectively diagnosing a large-area typed object, and can determine an abnormal state of an electrostatic chuck used in, for example, a semiconductor process or a display process.

For example, the monitoring device may measure the temperature, electrostatic force, or degree of inclination of the electrostatic chuck.

As another example, the monitoring device may measure a state of vibration inside the semiconductor or display equipment or a distance between a shower head and an electrostatic chuck. For example, the monitoring device may measure a vibration state of a wafer during transport of a wafer cassette.

As another example, the monitor and device may measure voltage, current, or power applied to the semiconductor or display chamber, or may measure the amount of light of plasma within the semiconductor or display chamber.

According to one embodiment, this monitoring device has a structure for effectively measuring a large area, specifically, by arranging intaglio or embossed structures, tensile stress, compressive stress or thermal stress can be compensated for, and the printed circuit board A microprocessor, a wireless communication device, a wireless charging device, a sensor, and the like may be arranged on the top. As a result, electronic devices such as wireless communication devices can be effectively protected and contamination of the equipment can be minimized.

Hereinafter, various embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a diagram showing a monitoring device inserted into a chamber according to an embodiment of the present invention, and FIG. 2 is a diagram showing a monitoring device arranged on an electrostatic chuck according to an embodiment of the present invention. 3 is a view showing a monitoring device according to an embodiment of the present invention, and FIGS. 4 to 9 are views showing a monitoring device according to other embodiments of the present invention. 10 is a diagram showing problems that may occur in the structure of a large area measuring system, FIG. 11 is a diagram showing an intaglio or embossed structure for reducing tensile stress and compressive stress, and FIG. 12 is a diagram showing problems that may occur in a large area measuring device. It is a diagram showing tensile stress or compressive stress in 13 is a diagram showing an example of error occurrence due to stress during transport of the robot, and FIGS. 14 to 16 are diagrams illustrating a decrease in measurement accuracy due to tensile stress.

Referring to FIG. 1 , an electrostatic chuck 112 may be formed at an inner lower end of a chamber 110 in which a plasma process is performed, and a monitoring device 100 may be arranged on an upper surface of the electrostatic chuck 112 .

The monitoring device 100 determines whether or not the electrostatic chuck 112 has an abnormality before a process starts in a semiconductor process or a display process. When it is determined that the electrostatic chuck 112 has no abnormality, the monitoring device 100 is removed, and process can be performed. For example, after the monitoring device 100 is removed, wafers for a deposition process, an etching process, an implant process, and a photo process may be placed on the electrostatic chuck 112 .

According to another embodiment, the monitoring device 100 may measure the distance between the electrostatic chuck 112 and the shower head 113 .

According to another embodiment, the monitoring device 100 may measure RF voltage, current or power within the chamber 110 .

According to another embodiment, the monitoring device 100 may measure a vibration state in the chamber.

According to another embodiment, the monitoring device 100 may optically measure the characteristics of plasma in the chamber.

Hereinafter, problems and solutions for measuring large-area identifiable entities with the monitoring device 100 will be described.

As shown in FIG. 12 , the substrate of the monitoring device may be bent under the influence of compressive stress 401 and tensile stress 402 according to material characteristics of the monitoring device. As shown in FIG. 10, this substrate warpage causes the sensor 214 of the monitoring device to deviate from the desired alignment direction, thereby degrading the measurement accuracy of the sensor 214 and degrading the communication performance of the wireless communication device 211. , the charging performance of the wireless charging device 212 for charging the power supply device 213 may be degraded.

In addition, as shown in FIG. 14 , the sensor 214 may not come into close contact with the electrostatic chuck 112 due to the substrate warpage, and as a result, temperature measurement accuracy may decrease.

In addition, when measuring the distance between the electrostatic chuck 112 and the showerhead 113, the axis of the sensor 214 is distorted, and measurement accuracy may decrease.

Furthermore, as shown in FIG. 15 , RF voltage, current, or power measurement accuracy may be reduced because the radiation direction of the RF power and the reception direction of the sensor 214 are different.

On the other hand, as shown in FIG. 13, bending of the monitoring device may occur while the monitoring device is transported using the robot 310, and as a result, the monitoring device may malfunction or be damaged. can

In order to solve this problem, the monitoring device 100 may have a structure capable of preventing warping of the substrate.

Specifically, the monitoring device 100 of this embodiment includes a printed circuit board 205 and at least one microprocessor 210 arranged on the printed circuit board 205, a wireless communication device 211, and a wireless charging device 212. ), a power supply 213 and at least one sensor 214. That is, a plurality of electronic elements may be arranged on the printed circuit board 205 .

According to one embodiment, the printed circuit board 205 and the electronic elements may be arranged in the protective layer 201, and the printed circuit board 205 and the electronic elements in the protective layer 201 are an electromagnetic wave shielding layer ( 204) can be covered. As a result, the electromagnetic wave shielding layer 204 may be formed above or below the printed circuit board 205 on which the electronic elements are arranged.

The protective layer 201 can block contaminants emitted from the monitoring device 100 or prevent performance and quality deterioration of the monitoring device 100 due to external factors such as heat and moisture, and mechanically reinforces rigidity to impact shock. And scratches can be prevented.

In addition, the protective layer 201 may compensate for the measurement accuracy of the monitoring device 100 by adjusting the flatness and roughness of the surface through giga-processing or chemical polishing according to the measurement environment.

A structure for preventing bending or improving flatness may be implemented in the monitoring device 100 .

Referring to FIG. 3 , after forming an intaglio structure 203 on a printed circuit board 205 and filling the intaglio structure 203 with a material exhibiting an opposite stress, the flatness of the board can be improved by compensating for the stress. For example, since the tensile strength of the printed circuit board 205 decreases as the temperature rises, the flatness of the printed circuit board 205 can be improved by filling the intaglio structure 203 with a material capable of improving the tensile strength. can

In order to improve the tensile strength, the intaglio structure 203 is filled with materials such as metal materials such as copper, aluminum, silver, gold, silicon, silicon carbide, and oxides having higher thermal conductivity than the printed circuit board 205 to increase the tensile strength can improve

According to another embodiment, as shown in FIG. 4, the embossed structure 206 made of materials having different heat transfer coefficients may be formed on the printed circuit board 205 to improve tensile strength and flatness of the board. .

According to another embodiment, as shown in FIG. 5, an intaglio structure 206 is formed on the protective layer 201, and a material having a stress characteristic opposite to that of the protective layer 201 is filled in the intaglio structure 206 to be flat. figure can be improved. For example, when the protective layer 201 is formed of an oxide, since tensile strength is weak due to the nature of the oxide, stress may be compensated for by filling the intaglio structure 206 with nitride capable of improving tensile strength.

According to another embodiment, as shown in FIG. 6 , aspect ratio stress may be improved by forming embossed structures 206 made of materials having different heat transfer coefficients on the protective layer 201 .

According to another embodiment, as shown in FIGS. 7 and 8 , a member 208 protecting the electronic devices from the external environment may be arranged on at least a portion of the protective layer 201 . As a result, the electronic elements inside the monitoring device 100 can be double protected from the external environment. For example, the monitoring device 100 may be protected from process gas and plasma flowing into semiconductor equipment or display equipment.

For example, the temperature measurement accuracy may be improved by forming the member 208 with a material having a thermal conductivity similar to that of silicon.

As another example, when measuring in a high-temperature environment, the member 208 may be formed of a material having low thermal conductivity to protect an electronic device vulnerable to heat.

According to another embodiment, as shown in FIG. 9 , pockets 209 may be arranged in member 208 to protect electronic devices vulnerable to certain environments.

For example, when measuring in a high-temperature environment, an electronic device vulnerable to high temperatures may be protected by filling the pocket 209 with a material having low thermal conductivity.

As another example, an electronic device vulnerable to vibration may be protected by arranging an elastic material in the pocket 209 .

Meanwhile, an electromagnetic wave shielding layer 204 may surround the electronic elements in order to prevent penetration of electromagnetic waves into the electronic elements in the protective layer 201 . Positionally, at least one electromagnetic wave shielding layer 204 may be positioned above and below the printed circuit board 205 .

According to one embodiment, the electromagnetic wave shielding layer 204 is a sputtered metal material (nickel, silver, gold, etc.) or liquid metal or metal spray method, electromagnetic wave shielding film, mesh that protects internal electronic elements from electromagnetic waves generated in plasma. It may be formed as an electromagnetic wave shielding film of the form.

In addition, a multi-layered printed circuit board may be used as the electromagnetic wave shielding layer 204 by forming the entire area of the uppermost layer and the lowermost layer with a material used for wiring (eg, copper, silver, gold, etc.).

In addition, the electromagnetic wave shielding layer 204 may be composed of a metal material such as copper, nickel, aluminum, gold, or silver or a plurality of alloy materials, and may be composed of a spray coating composed of the above material, or a film composed of the above material It may be composed of tape, may be composed of liquid metal composed of the material, the material may be implemented by a sputtering semiconductor process, and may be composed of sheet composed of the material, the sheet may block the front surface, It may be configured in the form of a mesh.

According to another embodiment, a portion of the electromagnetic wave shielding layer 204 corresponding to the wireless communication device 211 may be partially opened, which is to smoothly perform wireless communication. Meanwhile, a portion corresponding to the electrical sensor portion of the electromagnetic wave shielding layer 204 may also be open.

The protective layer 201 and the member 208, which can be the surface layer of the monitoring device, can be formed of a material that can be injected into the chamber, for example, silicon-based material, oxide-based material, ceramic-based material, engineering plastic, Teflon, etc. .

The microprocessor 210 is formed above or below the printed circuit board 205 and may control the operation of the wireless communication device 211, the wireless charging device 212, or at least one sensor 214.

For example, the microprocessor 210 may collect data sensed by various sensors 214 and transmit the collected data to an external device (not shown) through the wireless communication device 211 .

As another example, the microprocessor 210 may receive a user setting value set by a user through the wireless communication device 211 and control internal electronic elements according to the received user setting value.

According to one embodiment, all areas of the printed circuit board 205 except for wiring and device footprints can be used as a ground plane, and as a result, noise removal can be excellent. Also, this ground plane can be used as the electromagnetic wave protection layer 204 .

The wireless communication device 211 may be arranged on the printed circuit board 205 as a connection passage for wirelessly communicating with the external device. The wireless communication device 211 may transmit sensing data including temperature information, tilt information, vibration information, and electrical information sensed by the sensor 214 to the external device. At this time, the external device may analyze the transmitted sensing data to determine whether the electrostatic chuck 112 has an abnormality.

The wireless charging device 214 may wirelessly charge the power supply 213 embedded in the printed circuit board 205 .

The sensor 214 is formed on the printed circuit board 205, and includes the temperature, inclination, and vibration of the electrostatic chuck 112, voltage and current generated from the plasma, optical wavelength of the plasma, distance between the upper and lower electrodes of the semiconductor device, or DC voltage and current of power can be measured. As the sensor 214, a temperature sensor may be used to measure temperature, a gyroscope may be used to measure inclination, and a vibration sensor may be used to measure vibration. In addition, as the sensor 214, a capacitor, an inductor, etc. may be used to measure voltage and current, an electrical sensor may be used for electrical measurement, an optical sensor may be used to measure the optical wavelength of plasma, and an electrode may be used. A displacement sensor can be used to measure the distance between them.

In summary, the monitoring device 100 of the present invention is arranged on the electrostatic chuck 112 and measures the temperature, inclination, vibration, voltage or current, distance between electrodes, etc. condition can be diagnosed. In addition, the monitoring device 100 may diagnose an abnormal state of RF voltage, current, and power applied to the semiconductor or display chamber 100 and an optical plasma wavelength applied to the chamber.

If it is determined that the electrostatic chuck 112 and the chamber 110 are in an abnormal state, appropriate measures can be taken to prevent great damage. In particular, since the electrostatic chuck 112 is a part that fixes the wafer and is directly related to the process result, all wafers subjected to the process must be discarded if designed parameters are not maintained. Since the chamber 110 is a space in which a wafer process is performed and is directly related to a process result, all wafers subjected to the process must be discarded if designed parameters are not maintained. By diagnosing these problems in advance, great damage can be prevented.

In addition, since the monitoring device 100 has improved flatness by controlling tensile strength and compressive strength, the monitoring device 100 is electrostatically chucked by inserting a robot into the chamber 110 without opening the chamber 110. (112) and process diagnostics can be performed. If the flatness of the monitoring device 100 is low, as shown in FIG. 13, when the monitoring device 100 is moved by a robot, the monitoring device 100 may be knocked down and not pass through the inlet, and the monitoring device 100 A problem of not properly arranging on the electrostatic chuck 112 may occur.

However, the flatness of the monitoring device 100 can be freely controlled according to measurement elements, measurement methods, and measurement environments.

On the other hand, although the abnormal state of the electrostatic chuck and the semiconductor chamber or display chamber has been determined above, the monitoring device 100 includes the temperature, tilt, or vibration degree of the baking chuck in the photo process, and the temperature, tilt, voltage, or vibration of the chuck performed in the implant equipment. It may also be used to diagnose the degree, temperature of a high-temperature chuck performed in the deposition process, and the like. When measuring the temperature of the high-temperature chuck, it can be measured at a long distance.

Also, the monitoring device 100 may be used to measure the temperature, vibration, or tilt of a photomask used in an exposure process. At this time, the monitoring device 100 may have the same structure as the structure mentioned above.

According to other embodiments, monitoring device 100 may not physically contact electrostatic chuck 112 . The monitoring device 100 may non-contactly monitor the temperature of the high-temperature chuck on the lift pin of the chuck to diagnose the high-temperature chuck in the deposition process.

In addition, the monitoring device 100 may be used for diagnosing an object to be diagnosed using an optical sensor that detects light or an electrical sensor that measures electrical components. At this time, in order to mount the optical sensor, the monitoring device 100 having the above structure is used, but a light receiving sensor for receiving light and a hole through which light can pass may be formed in the monitoring device 100. there is.

In addition, in order to mount the electrical sensor, an electrical sensor may be built into the monitoring device 100, and a hole through which an electrical component may pass may be formed in the monitoring device 100.

That is, as long as the monitoring device 100 uses a pocketed wafer and various elements such as sensors are mounted in the pocket, it can be used in various stages of a semiconductor process or a display process.

According to another embodiment, an adhesive layer may be configured to attach the printed circuit board 205 and the member 208 . At this time, the protective layer 201 may also serve as the adhesive layer.

According to another embodiment, an intaglio pattern or an embossed pattern may be formed to compensate for stress applied to the member 208 vertically and horizontally. Here, the pattern may be formed of a material capable of compensating for a coefficient of thermal expansion, such as a thermosetting resin, engineering plastic, ceramic, silicon, or micro wire.

On the other hand, the components of the above-described embodiment can be easily grasped from a process point of view. That is, each component can be identified as each process. In addition, the process of the above-described embodiment can be easily grasped from the viewpoint of components of the device.

The embodiments of the present invention described above have been disclosed for illustrative purposes, and those skilled in the art having ordinary knowledge of the present invention will be able to make various modifications, changes, and additions within the spirit and scope of the present invention, and such modifications, changes, and additions will be considered to fall within the scope of the following claims.

100: monitoring device 110: chamber
112: electrostatic chuck 113: shower head
201: protective layer 202: intaglio structure
203: embossed structure 204: electromagnetic wave shielding layer
205: printed circuit board 206: intaglio structure
207: embossed structure 208: member
209: pocket 210: microprocessor
211: wireless communication device 212: wireless charging device
213: power unit 214: sensor
240: normal measurement direction 241: abnormal measurement direction
310: wafer transport robot 401: compressive stress
402: tensile stress

Claims (22)

In the monitoring device,
protective layer;
a substrate arranged in a space inside the protective layer; and
Including at least one electronic device arranged on the substrate,
The electronic device has at least one sensor, and the monitoring device uses the sensor to determine the temperature, inclination, light, vibration, voltage, current, power, and pressure of the identifiable entity located outside the monitoring device and the Diagnosing the identifiable body by measuring at least one of the distances between different elements;
An intaglio structure or an embossed structure is formed on the substrate, and the intaglio structure is filled with a material having characteristics different from that of the substrate, or the embossed structure is formed of a material having characteristics different from those of the substrate. Monitoring device. The method of claim 1, wherein the substrate is a printed circuit board,
A material capable of compensating for the tensile or compressive force of the substrate is filled in the intaglio structure or the embossed structure is formed of a material capable of compensating for the tensile or compressive force of the substrate,
The monitoring device, characterized in that the flatness of the substrate is improved by compensating for the tensile force or the compressive force. 2. A monitoring device according to claim 1, wherein said other property is a coefficient of thermal expansion. The method of claim 3, wherein the material filled in the intaglio structure is a material having a higher thermal expansion coefficient than the substrate and is a thermosetting resin, engineering plastic, silicon, copper, aluminum, gold or silver,
The material of the embossed structure is a material having a higher coefficient of thermal expansion than the substrate and is a thermosetting resin, engineering plastic, silicon, copper, aluminum, gold or silver. According to claim 1,
Further comprising an electromagnetic wave blocking layer surrounding the substrate and the electronic device to block electromagnetic waves flowing from the outside,
The electronic device further includes a microprocessor, a wireless communication device, and a wireless charging device in addition to the sensor,
The microprocessor collects data measured by the sensor and transmits the data to an external device through the wireless communication device, and the wireless charging device charges a battery in the board. The monitoring device according to claim 1, wherein the protective layer is formed of silicon, oxide, ceramic or carbon. According to claim 1,
Further comprising a member arranged outside the protective layer,
The member is formed of a material having a different temperature characteristic or thermal conductivity characteristic from the protective layer to improve temperature measurement accuracy or protect an electronic element vulnerable to heat. 8. The monitoring device according to claim 7, wherein a pocket is formed in the member. The monitoring device according to claim 8, wherein the pocket is filled with a material having a different thermal conductivity from that of the member, or an elastic material is arranged inside the pocket. The monitoring device according to claim 1, wherein the detectable body is an electrostatic chuck, and the sensor measures temperature, slope, voltage, current, or degree of vibration of the electrostatic chuck. The method of claim 1, wherein the substrate is a printed circuit board,
A monitoring device, characterized in that an area of the substrate excluding the wiring and the footprint of the electronic device is used as a ground plane. The method of claim 1, wherein a wireless communication element, a light receiving sensor or an electrical sensor is arranged on the substrate,
A monitoring device, characterized in that a hole is formed in a portion corresponding to the wireless communication element, the light receiving sensor, or the electrical sensor of the protective layer. In the monitoring device,
protective layer;
a substrate arranged in a space inside the protective layer; and
Including at least one electronic device arranged on the substrate,
The electronic device has at least one sensor, and the monitoring device uses the sensor to determine the temperature, inclination, light, vibration, voltage, current, power, and pressure of the identifiable entity located outside the monitoring device and the Diagnosing the identifiable body by measuring at least one of the distances between different elements;
An intaglio structure or an embossed structure is formed on the protective layer, and the intaglio structure is filled with a material having characteristics different from that of the protective layer, or the embossed structure is formed of a material having characteristics different from that of the protective layer. device. 14. The method of claim 13, wherein the substrate is a printed circuit board,
A material capable of compensating for the tensile or compressive force of the protective layer is filled in the concave structure or the embossed structure is formed of a material capable of compensating for the tensile or compressive force of the protective layer,
A monitoring device, characterized in that the flatness of the protective layer is improved by compensating for the tensile force or the compressive force. [Claim 14] The monitoring device of claim 13, wherein a material filled in the intaglio structure or forming the embossed structure is a material having a stress characteristic opposite to that of the protection layer, and is a material such as nitride, carbon material, or silicon. According to claim 13,
Further comprising an electromagnetic wave blocking layer surrounding the substrate and the electronic device to block electromagnetic waves flowing from the outside,
The electronic device further includes a microprocessor, a wireless communication device, and a wireless charging device in addition to the sensor,
The microprocessor collects data measured by the sensor and transmits the data to an external device through the wireless communication device, and the wireless charging device charges a battery in the board. The method of claim 13, wherein a wireless communication element, a light receiving sensor or an electrical sensor is arranged on the substrate,
A monitoring device, characterized in that a hole is formed in a portion corresponding to the wireless communication element, the light receiving sensor, or the electrical sensor of the protective layer. According to claim 13,
Further comprising a member arranged outside the protective layer,
The member is formed of a material having a different temperature characteristic or thermal conductivity characteristic from the protective layer to improve temperature measurement accuracy or protect an electronic element vulnerable to heat. In the monitoring device,
protective layer;
a substrate arranged in a space inside the protective layer;
at least one electronic device arranged over the substrate; and
A member arranged outside the protective layer and doubly protecting the electronic device together with the protective layer,
The electronic device has at least one sensor, and the monitoring device uses the sensor to determine the temperature, inclination, light, vibration, voltage, current, power, and pressure of the identifiable entity located outside the monitoring device and the A monitoring device characterized in that for diagnosing the subject to be diagnosed by measuring at least one of distances between different elements. The monitoring device according to claim 19, wherein an intaglio or embossed pattern is formed on the member to compensate for stress applied vertically and horizontally. 21. The monitoring device according to claim 20, wherein the pattern is formed of thermosetting resin, engineering plastic, ceramic, silicon or micro wire to compensate for the thermal expansion coefficient of the member. The method of claim 19, wherein a pocket is formed in the member,
A monitoring device, characterized in that the pocket is filled with a material having a different thermal conductivity from that of the member or an elastic material is arranged inside the pocket.

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