KR20230050517A - Apparatus and method for processing substrate - Google Patents

Abstract

Provided is a method for processing a substrate which can increase the lifespan of an inkjet head and achieve uniform density of each cell. The method for processing a substrate comprises: discharging a first chemical solution containing ionized quantum dots onto a substrate; discharging a second chemical solution containing a reducing agent onto the first chemical solution; and reacting the first chemical solution and the second chemical solution, to synthesize quantum dot ink on the substrate.

Description

Substrate processing apparatus and method {Apparatus and method for processing substrate}

The present invention relates to a substrate processing apparatus and method.

To manufacture a display device such as an LCD panel, a PDP panel, or an LED panel, a printing process (eg, RGB patterning) of discharging ink on a substrate is performed.

However, quantum dot ink includes inorganic particles, and the inorganic particles may aggregate with each other. The aggregated inorganic particles shorten the life of the inkjet head. In addition, since it is difficult to eject quantum dot ink with a uniform density, the density may not be uniform for each cell.

An object to be solved by the present invention is to provide a substrate processing method capable of increasing the lifespan of an inkjet head and making the density uniform for each cell.

Another problem to be solved by the present invention is to provide a substrate processing apparatus capable of increasing the lifespan of an inkjet head and making the density uniform for each cell.

Another problem to be solved by the present invention is to provide a display device manufactured using the substrate processing method.

The tasks of the present invention are not limited to the tasks mentioned above, and other tasks not mentioned will be clearly understood by those skilled in the art from the following description.

One aspect of the substrate processing method of the present invention for achieving the above object is to discharge a first chemical solution containing ionized quantum dots onto a substrate, and a second chemical solution containing a reducing agent on the first chemical solution. and synthesizing quantum dot ink on the substrate by discharging a chemical solution and reacting the first chemical solution with the second chemical solution.

Here, when synthesizing the quantum dot ink, the substrate may be heat treated.

Alternatively, when synthesizing the quantum dot ink, UV irradiation or electron beam irradiation may be applied to the substrate.

The reducing agent includes a basic substance.

In addition, the second liquid chemical may further include at least one of a ligand, an antioxidant, and a binder. The ligand may include carboxylic acid, the antioxidant may include an amine group, and the binder may include at least one of epoxy, acrylic, and polyester.

Meanwhile, a plurality of banks defining a discharge area may be formed on the substrate, and the first chemical liquid and the second chemical liquid may be discharged into the discharge area. Here, a volume ratio of the first liquid liquid and the second liquid liquid discharged into the discharge area may be 5:5 to 7:3. Additionally, the volume ratio of the first chemical liquid and the second chemical liquid discharged into the ejection area is a:b, and the quantum dot ink synthesized in the ejection area is divided into a first area and a second chemical liquid disposed on the first area. It includes two regions, and the volumes of the first region and the second region are respectively a/(a+b) and b/(a+b) of the quantum dot ink synthesized in the ejection region, and the first region The amount of quantum dots formed in may be 70% or more of the total quantum dots of the quantum dot ink synthesized in the ejection area.

A first inkjet device that discharges the first chemical solution and a second inkjet device that discharges the second chemical solution may be different from each other.

One aspect of the substrate processing apparatus of the present invention for achieving the above object is a first inkjet apparatus for discharging a first liquid chemical containing ionized quantum dots onto a substrate; a second inkjet device for discharging a second liquid chemical containing a reducing agent onto the first liquid liquid of the substrate; and a heat treatment apparatus for synthesizing quantum dot ink on the substrate by heat-treating the substrate to react the first liquid chemical with the second liquid chemical.

The reducing agent may include a basic material.

In addition, the second liquid chemical may further include at least one of a ligand, an antioxidant, and a binder.

A plurality of banks defining a discharge area are formed on the substrate, the first inkjet device discharges the first liquid chemical into the discharge area, and the second inkjet device discharges the second chemical liquid into the discharge area. can Here, a volume ratio of the first liquid liquid and the second liquid liquid discharged into the discharge area may be 5:5 to 7:3. Additionally, the volume ratio of the first chemical liquid and the second chemical liquid discharged into the ejection area is a:b, and the quantum dot ink synthesized in the ejection area is divided into a first area and a second chemical liquid disposed on the first area. It includes two regions, and the volumes of the first region and the second region are respectively a/(a+b) and b/(a+b) of the quantum dot ink synthesized in the ejection region, and the first region The amount of quantum dots formed in may be 70% or more of the total quantum dots of the quantum dot ink synthesized in the ejection area.

One side of the display device of the present invention for achieving the above another object is a substrate; a plurality of banks formed on the substrate to define discharge regions; and quantum dot ink formed in the ejection area, wherein the quantum dot ink synthesized in the ejection area includes a first area and a second area disposed on the first area, the first area and the second area. The volumes of are 6/10 and 4/10 of the quantum dot ink synthesized in the ejection area, respectively, and the amount of quantum dots formed in the first area is 70% of the total quantum dots of the quantum dot ink synthesized in the ejection area. may be ideal

Details of other embodiments are included in the detailed description and drawings.

1 is a flowchart illustrating a substrate processing method according to an embodiment of the present invention.
2 to 4 are diagrams of intermediate steps for explaining each step of FIG. 1 .
FIG. 5 is an enlarged view of area A of FIG. 4 .
6 is a diagram for explaining a substrate processing apparatus according to an embodiment of the present invention.
7 is a flowchart illustrating a substrate processing method according to another embodiment of the present invention.
FIG. 8 is an exemplary diagram for explaining an inkjet device used in step S11 or step S21 of FIG. 7 .

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. Advantages and features of the present invention, and methods for achieving them, will become clear with reference to the embodiments described below in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below and may be implemented in various different forms, only the present embodiments make the disclosure of the present invention complete, and the common knowledge in the art to which the present invention belongs It is provided to fully inform the holder of the scope of the invention, and the present invention is only defined by the scope of the claims. Like reference numbers designate like elements throughout the specification.

The spatially relative terms "below", "beneath", "lower", "above", "upper", etc. It can be used to easily describe the correlation between elements or components and other elements or components. Spatially relative terms should be understood as encompassing different orientations of elements in use or operation in addition to the orientations shown in the figures. For example, when flipping elements shown in the figures, elements described as “below” or “beneath” other elements may be placed “above” the other elements. Thus, the exemplary term “below” may include directions of both below and above. Elements may also be oriented in other orientations, and thus spatially relative terms may be interpreted according to orientation.

Although first, second, etc. are used to describe various elements, components and/or sections, it is needless to say that these elements, components and/or sections are not limited by these terms. These terms are only used to distinguish one element, component or section from another element, component or section. Accordingly, it goes without saying that the first element, first element, or first section referred to below may also be a second element, second element, or second section within the spirit of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the description with reference to the accompanying drawings, the same or corresponding components regardless of reference numerals are given the same reference numerals, Description is omitted.

1 is a flowchart illustrating a substrate processing method according to an embodiment of the present invention. 2 to 4 are diagrams of intermediate steps for explaining each step of FIG. 1 . FIG. 5 is an enlarged view of area A of FIG. 4 .

Referring to FIGS. 1 and 2 , the first liquid chemicals 120R, 120G, and 120B including ionized quantum dots are discharged onto the substrate 100 (S10).

Specifically, a plurality of banks 110 may be formed on the substrate 100 . The plurality of banks 110 define regions (ie, discharge regions 101 , 102 , and 103 ) where the liquid medicine is to be discharged. The bank 110 may be an inorganic bank using oxide, nitride or oxynitride, or an organic bank using polyimide or the like. Alternatively, the bank 110 may have a form in which organic banks are stacked on inorganic banks.

The quantum dots included in the first chemical solutions 120R, 120G, and 120B may be in an ionized state.

Specifically, quantum dots are particles having a crystal structure of several to several tens of nanometers and may be composed of hundreds to thousands of atoms.

Since quantum dots are very small in size, a quantum confinement effect appears. The quantum confinement effect refers to a phenomenon in which a band gap of an object increases when the object is reduced to a nanometer size or less. Accordingly, when light having a wavelength greater than the band gap of the quantum dot is irradiated to the quantum dot, the quantum dot absorbs the light and becomes an excited state, and falls to the ground state while emitting light of a specific wavelength. At this time, the wavelength of the emitted light has a value corresponding to the band gap.

Quantum dots may have a core-shell structure including a core and a shell covering the core. Alternatively, the quantum dots may have a core-shell-shell structure including a core, a first shell covering the core, and a second shell covering the first shell.

The core of the quantum dot may include a group II-VI compound, a group III-VI compound, a group III-V compound, a group IV-VI compound, a group IV element or compound, a group I-III-VI compound, or a combination thereof. .

Group II-VI compounds include binary element compounds selected from the group consisting of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS and mixtures thereof; A ternary selected from the group consisting of CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS and mixtures thereof bovine compounds; and CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, and quaternary compounds selected from the group consisting of mixtures thereof.

Group III-VI compounds include binary element compounds such as In ₂ S ₃ , In ₂ Se ₃ and the like; ternary compounds such as InGaS ₃ and InGaSe ₃ ; or any combination thereof; may include.

Group III-V compound is a binary element compound selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb and mixtures thereof; A ternary compound selected from the group consisting of GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InAlP, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, and mixtures thereof; and a quaternary compound selected from the group consisting of GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, and mixtures thereof. The group III-V semiconductor compound may further include a group II metal (eg, InZnP, etc.).

Group IV-VI compounds are SnS, SnSe, SnTe, PbS, PbSe, PbTe, and a binary element compound selected from the group consisting of mixtures thereof; a ternary compound selected from the group consisting of SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, and mixtures thereof; And it may be selected from the group consisting of quaternary compounds selected from the group consisting of SnPbSSe, SnPbSeTe, SnPbSTe, and mixtures thereof. Group IV elements may be selected from the group consisting of Si, Ge, and mixtures thereof. The group IV compound may be a binary element compound selected from the group consisting of SiC, SiGe, and mixtures thereof.

Group I-III-VI semiconductor compounds AgInS, AgInS ₂ , CuInS, CuInS ₂ , CuGaO ₂ , AgGaO ₂ , AgAlO ₂ ternary compounds such as the like; or any combination thereof; may include.

In this case, the two-element compound, the three-element compound, or the quaternary element compound may be present in the particle at a uniform concentration or may be present in the same particle in a state in which the concentration distribution is partially different. Also, one "quantum dot" may have a core/shell structure surrounding another "quantum dot". The interface between the core and the shell may have a concentration gradient in which the concentration of elements present in the shell decreases toward the center.

As described above, the quantum dots may have a core-shell structure including a core and a shell surrounding the core. The shell may serve as a protective layer for maintaining semiconductor properties by preventing chemical denaturation of the core and/or as a charging layer for imparting electrophoretic properties to quantum dots. The shell may be monolayer or multilayer. The interface between the core and the shell may have a concentration gradient in which the concentration of elements present in the shell decreases toward the center.

Examples of such quantum dot shells include oxides of metals or non-metals, semiconductor compounds, or combinations thereof.

For example, oxides of metals or nonmetals are SiO ₂ , Al ₂ O ₃ , TiO ₂ , ZnO, MnO, Mn ₂ O ₃ , Mn ₃ O ₄ , CuO, FeO, Fe ₂ O ₃ , Fe ₃ O ₄ , CoO , Co ₃ O ₄ , two-element compounds such as NiO, or MgAl ₂ O ₄ , CoFe ₂ O ₄ , NiFe ₂ O ₄ , CoMn ₂ O ₄ and the like, but the present invention is not limited thereto. no.

Examples of the semiconductor compound include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, and the like. The present invention is not limited thereto.

In addition, the quantum dots may have a full width of half maximum (FWHM) of the emission wavelength spectrum of about 45 nm or less, preferably about 40 nm or less, more preferably about 30 nm or less, and color purity or color reproducibility within this range can improve In addition, since light emitted through these quantum dots is emitted in all directions, a wide viewing angle can be improved.

In addition, the shape of the quantum dots is not particularly limited to those commonly used in the field, but more specifically, spherical, pyramidal, multi-arm, or cubic nanoparticles, nanotubes, Forms such as nanowires, nanofibers, and nanoplate-like particles can be used.

Quantum dots can control the color of light emitted according to the particle size, and accordingly, quantum dots can have various luminous colors such as red, green, and blue.

For example, as shown in FIG. 2 , a first liquid chemical 120R for generating quantum dots capable of emitting red light may be discharged into the first discharge region 101 . A first liquid chemical 120G for generating quantum dots capable of emitting green light may be discharged into the second discharge region 102 . A first liquid chemical 120B for generating quantum dots capable of emitting blue light may be discharged to the third discharge region 103 .

Referring to FIGS. 1 and 3 , the second chemical liquid 130 containing a reducing agent is discharged into the first liquid chemicals 120R, 120G, and 120B (S20).

Specifically, the reducing agent may be in an ionized state.

In addition, a basic substance may be used as a reducing agent. For example, NaCl, NaOH, etc. may be used, but is not limited thereto. The reducing agent provides electrons to the ionized quantum dots, thereby reducing the ionized quantum dots.

Additionally, the second liquid chemical 130 may include various additives in addition to the reducing agent. For example, the second liquid chemical 130 may include a ligand, an antioxidant, a binder, a dispersing agent, a flow control agent, and the like.

The ligand may include, for example, a carboxylic acid. That is, oleic acid, formic acid, succinic acid, glutaric acid, and the like may be included.

Examples of antioxidants include amines.

Examples of the binder include at least one of epoxy, acrylic, and polyester.

Meanwhile, in FIG. 3, it has been described that the same second chemical liquid 130 is discharged to all the discharge areas 101, 102, and 103, but it is not limited thereto. That is, the second chemical liquid 130 suitable for each discharge area can be discharged. That is, the second liquid chemical 130 discharged into the first discharge region 101 is suitable for the first chemical liquid 120R, and the second chemical liquid 130 discharged into the second discharge region 102 is suitable for the first chemical liquid 120G. , and the second chemical liquid 130 discharged to the third discharge region 103 may be suitable for the first chemical liquid 120B.

Meanwhile, a volume ratio of the first liquid liquid 120R, 120G, 120B and the second liquid liquid 130 discharged into the discharge regions 101, 102, and 103 may be 5:5 to 7:3. That is, based on the first chemical liquid 120R/second chemical liquid 130 discharged within one discharge area (eg, 101), the amount of the first chemical liquid 120R is equal to the amount of the second chemical liquid 130 The amount of the first chemical liquid 120R may be equal to or greater than the amount of the second chemical liquid 130 . When the volume ratio of the first chemical liquid 120R and the second chemical liquid 130 is less than 5:5, the amount of quantum dots generated in one discharge region (eg, 101) may be smaller than a target value. On the other hand, when the volume ratio of the first chemical liquid 120R and the second chemical liquid 130 exceeds 7:3, the quantity of the reducing agent is very small, and thus quantum dots may not be sufficiently generated.

Referring to FIGS. 1 and 4 , quantum dot inks 150R, 150G, and 150B are synthesized by reacting the first liquid chemicals 120R, 120G, and 120B with the second chemical liquid 130 (S30).

Specifically, when synthesizing the quantum dot inks 150R, 150G, and 150B, the substrate 100 may be heat treated. Alternatively, when synthesizing the quantum dot inks 150R, 150G, and 150B, UV irradiation or e-beam irradiation may be applied to the substrate 100 . Alternatively, both heat treatment and UV/electron beam irradiation may be performed.

Here, the substrate processing method described above will be described as an example. Below, (l) means a liquid state, (s) a solid state, and (g) a gas state.

The state in which QDs are ionized by nitric acid can be expressed as QD ²⁺ (l) + NO ₃ ^2- (l) + H ₂ O (l). In addition, the ionized state of the reducing agent (NaCl) can be expressed as 2Na ⁺ (l) + 2Cl ^- (l) +H ₂ O (l). Accordingly, a process of synthesizing the quantum dot ink 150R, 150G, and 150B by reacting the first chemical liquid 120R, 120G, and 120B with the second chemical liquid 130 is expressed as follows. The synthesis results in the formation of solid-state QDs.

QD ²⁺ (l) + NO ₃ ^2- (l) +H ₂ O (l) +2Na ⁺ (l) + 2Cl ^- (l) =

QD ⁰ (s) + 2Na ⁺ (l) + NO ₃ ^2- (l) +H ₂ O (l) +2Cl (g)

Here, referring to FIG. 5 , the quantum dot ink 150R synthesized in the discharge area (eg, 101) has a first area 151 and a second area 152 disposed on the first area 151. can include

The first region 151 corresponds to the first liquid chemical 120R. That is, the volume of the first region 151 may correspond to the amount of the first liquid chemical 120R. The second region 152 corresponds to the second liquid chemical 130 . That is, the volume of the second region 152 may correspond to the amount of the second chemical solution 130 .

For example, when the volume ratio of the first chemical liquid 120R and the second chemical liquid 130 discharged into the discharge region 101 is a:b (as described above, a:b is 5:5 to 7: 3), the volume of the first region 151 is a/(a+b) of the quantum dot ink 150R, and the volume of the second region 152 is b/(a+b) of the quantum dot ink 150R. can be For example, the volume of the first region 151 is 6/10 of the quantum dot ink 150R synthesized in the ejection region 101, and the volume of the second region 152 is synthesized in the ejection region 101. It may be 4/10 of the quantum dot ink 150R.

As shown, the amount of quantum dots (QD) formed in the first region 151 may be significantly greater than the amount of quantum dots (QD) formed in the second region 152 . For example, the amount of quantum dots (QDs) formed in the first region 151 may be 70% or more of the total quantum dots (QDs) of the quantum dot ink 150R synthesized in the discharge region 101 .

The discharge amount of the first chemical solution 120R, 120G, and 120B, the discharge amount of the second chemical solution 130, the amount of ionized quantum dots in the first chemical solution 120R, 120G, and 120B, and the discharge amount of the second chemical solution 130 Depending on the amount of the reducing agent, the amount of quantum dots (QD) formed in the first region 151 may be changed. For example, it may be 80% or more or 90% or more of the total quantum dots (QDs) of the quantum dot ink 150R synthesized in the ejection area 101 .

As described above, when the quantum dot ink 150R is synthesized on the substrate 100 after discharging the first chemical liquid 120R, 120G, 120B containing ionized quantum dots and the second chemical liquid 130 containing a reducing agent, Quantum dots (QDs) do not aggregate. That is, when viewed from the plane of the discharge region 101 as a reference, the discharge region 101 may be evenly spread throughout.

Meanwhile, since the ionized quantum dots were included in the first chemical liquids 120R, 120G, and 120B, most of the first chemical liquids 120R, 120G, and 120B were discharged from the space (that is, corresponding to the first region 151). A quantum dot (QD) of is formed. Accordingly, most of the quantum dots (QDs) formed in the discharge region 101 (about 70% or more) may be located in the first region 151 .

In addition, since the quantum dots are ionized in the first chemical liquids 120R, 120G, and 120B, circulation of the first chemical liquids 120R, 120G, and 120B in the reservoir becomes easy. In addition, since the inkjet head discharges the first liquid chemicals 120R, 120G, and 120B containing ionized quantum dots, clogging of nozzles of the inkjet head, which may be caused by the agglomerated quantum dots, can be prevented. Thus, the life of the inkjet head can be increased.

In addition, since the first liquid chemicals 120R, 120G, and 120B including ionized quantum dots are used, the quantum dot ink QD can be generated at a uniform concentration regardless of the discharge regions 101, 102, and 103.

On the other hand, it has been described that the quantum dot ink 150R, 150G, 150B is synthesized on the substrate 100 by discharging the chemical solution twice, but it is necessary to form other members (eg, metal wiring, transparent wiring (ITO), etc.) can also be applied to

For example, a first liquid chemical containing an ionized metal material is discharged onto a substrate, a second chemical liquid containing an ionized reducing agent is discharged, and the first chemical liquid and the second chemical liquid are reacted to form a metal wire on the substrate. can form

For example, the state in which Ag is ionized by nitric acid can be expressed as Ag ²⁺ (l) + NO ₃ ^2- (l) +H ₂ O (l). In addition, the ionized state of the reducing agent (NaCl) can be expressed as 2Na ⁺ (l) + 2Cl ^- (l) +H ₂ O (l). Accordingly, a process of synthesizing a metal wire by reacting the first liquid chemical with the second liquid chemical is expressed as follows. The synthesis results in Ag in solid form.

Ag ²⁺ (l) + NO ₃ ^2- (l) +H ₂ O (l) +2Na ⁺ (l) + 2Cl ^- (l) =

Ag ⁰ (s) + 2Na ⁺ (l) + NO ₃ ^2- (l) +H ₂ O (l) +2Cl (g)

6 is a diagram for explaining a substrate processing apparatus according to an embodiment of the present invention.

Referring to FIG. 6 , a substrate processing apparatus according to an embodiment of the present invention includes a process stage PT, a first gantry 411, a second gantry 412, a first inkjet head module 421, and a second inkjet It includes a head module 422, a first image generating module 431, a second image generating module 432, a support module 440, a control module 450, and the like.

The process stage PT is a space for performing an inkjet process on the substrate G. The substrate 100 is supported on the support module 440 . The support module 440 may move the substrate 100 in the first direction (S). Unlike what is shown, the holder may hold and move the substrate G, or the substrate G may be moved by an air floating method. The substrate G may be, for example, a glass substrate. A device completed by the inkjet process may be a display device.

The first gantry 411 and the second gantry 412 may be spaced apart from each other and disposed to cross the process stage PT.

The first inkjet head module 421 and the first image generating module 431 are installed on the first gantry 411 and can move along the first gantry 411 (refer to reference numeral W1). The first inkjet head module 421 may eject the first liquid chemical (refer to 120R, 120G, and 120B in FIG. 2 ) including ionized quantum dots. The first image generating module 431 may capture the first liquid chemicals 120R, 120G, and 120B discharged onto the substrate G.

The second inkjet head module 422 and the second image generation module 432 are installed on the second gantry 412 and can move along the second gantry 412 (refer to reference numeral W2). The second inkjet head module 422 may eject a second liquid chemical (see 130 in FIG. 3 ) containing an ionized reducing agent. The second image generating module 432 may capture the second liquid chemical 130 discharged onto the substrate G.

The control module 450 controls the support module 440, the first inkjet head module 421, the first image generating module 431, the second inkjet head module 422, and the second image generating module 432. play a role

Describing the operation, the substrate 100 moves under the first gantry 411 . While the support module 440 performs a swath operation in the first direction (S), the first inkjet head module 421 moves in the second direction (W1), and the first inkjet head module 421 ) discharges the first liquid chemicals 120R, 120G, and 120B onto the substrate 100 .

Subsequently, when the discharge of the first liquid chemicals 120R, 120G, and 120B is completed, the substrate 100 moves below the second gantry 412 . While the support module 440 performs a swath operation in the first direction S, the second inkjet head module 422 moves in the second direction W2, and the second inkjet head module 422 ) discharges the second liquid chemical 130 onto the substrate 100 .

Subsequently, when the discharge of the second liquid chemical 130 is completed, the substrate 100 is moved to a heat treatment apparatus. The heat treatment apparatus heat-treats the substrate 100 to react the first chemical liquids 120R, 120G, and 120B with the second chemical liquid 130 to synthesize the quantum dot ink 150R, 150G, and 150B on the substrate 100. .

7 is a flowchart illustrating a substrate processing method according to another embodiment of the present invention. FIG. 8 is an exemplary diagram for explaining an inkjet device used in step S11 or step S21 of FIG. 7 . For convenience of description, the description will focus on differences from those described with reference to FIGS. 1 to 6 .

In the substrate processing method described in FIG. 6 , ejecting a first liquid chemical containing ionized quantum dots and ejecting a second liquid chemical containing an ionized reducing agent are performed in one inkjet device.

On the other hand, in the substrate processing method illustrated in FIG. 7 , the ejection of the first chemical solution containing ionized quantum dots and the ejection of the second chemical solution containing ionized reducing agent are performed in separate inkjet devices.

Specifically, referring to FIG. 7 , the first inkjet device ejects a first liquid chemical containing ionized quantum dots onto the substrate (S11).

Subsequently, a second inkjet device different from the first inkjet device discharges a second liquid chemical containing a reducing agent onto the first liquid chemical on the substrate (S21).

Subsequently, the heat treatment apparatus heat-treats the substrate to react the first chemical liquid with the second chemical liquid. As a result, quantum dot ink can be synthesized on the substrate (S31).

Here, referring to FIG. 8 , the substrate processing apparatus includes a process stage (PT), a gantry 410, an inkjet head module 420, an image generating module 430, a support module 440, a control module 450, and the like. include Only one gantry 410 may be disposed in the process stage PT. An inkjet head module 420 movable in the second direction (W) and an image generating module 430 are installed on the gantry 410 .

Describing the operation, the substrate 100 enters the first inkjet device (substrate processing device in FIG. 8 ). The first liquid chemicals 120R, 120G, and 120B are ejected onto the substrate 100 in the first inkjet device.

Subsequently, when the discharge of the first liquid chemicals 120R, 120G, and 120B is completed, the substrate 100 is moved from the first inkjet device to the second inkjet device (a device having substantially the same shape as the substrate processing device of FIG. 8 ). . The second liquid chemical 130 is ejected onto the substrate 100 in the second inkjet device.

Subsequently, when the discharge of the second liquid chemical 130 is completed, the substrate 100 is moved to a heat treatment apparatus. The heat treatment apparatus heat-treats the substrate 100 and reacts the first chemical liquids 120R, 120G, and 120B with the second chemical liquid 130 to synthesize the quantum dot ink 150R, 150G, and 150B on the substrate 100. .

Although the embodiments of the present invention have been described with reference to the above and accompanying drawings, those skilled in the art to which the present invention pertains can implement the present invention in other specific forms without changing the technical spirit or essential features. You will understand that there is Therefore, the embodiments described above should be understood as illustrative in all respects and not limiting.

100: substrate 110: bank
120R, 120G, 120B: first chemical liquid 130: second chemical liquid
150R, 150G, 150B: quantum dot ink 411: first gantry
412: second gantry 421: first inkjet head module
422: second inkjet head module 431: first image generating module
432: second image generation module 440: support module
450: control module

Claims (19)

Discharging a first liquid chemical containing ionized quantum dots onto the substrate;
discharging a second liquid chemical containing a reducing agent onto the first liquid liquid;
and synthesizing quantum dot ink on the substrate by reacting the first chemical with the second chemical. According to claim 1,
When synthesizing the quantum dot ink, the substrate processing method of heat-treating the substrate. According to claim 1,
When synthesizing the quantum dot ink, UV irradiation or electron beam irradiation is performed on the substrate, a substrate processing method. According to claim 1,
The reducing agent comprises a basic material, a substrate processing method. According to claim 1,
The second liquid chemical further includes at least one of a ligand, an antioxidant, and a binder. According to claim 5,
The substrate processing method of claim 1 , wherein the ligand comprises a carboxylic acid. According to claim 5,
The antioxidant is a substrate processing method comprising an amine-based. According to claim 5,
Wherein the binder comprises at least one of epoxy, acrylic, and polyester. According to claim 1,
A plurality of banks defining discharge regions are formed on the substrate;
The first chemical liquid and the second chemical liquid are discharged into the discharge region. According to claim 9,
The substrate processing method of claim 1 , wherein a volume ratio of the first chemical liquid and the second chemical liquid discharged into the discharge region ranges from 5:5 to 7:3. According to claim 10,
The volume ratio of the first liquid liquid and the second liquid liquid discharged into the discharge region is a:b;
The quantum dot ink synthesized in the ejection area includes a first area and a second area disposed on the first area,
The volumes of the first region and the second region are a/(a+b) and b/(a+b) of the quantum dot ink synthesized in the ejection region, respectively;
The amount of quantum dots formed in the first region is 70% or more of the total quantum dots of the quantum dot ink synthesized in the discharge region. According to claim 1,
The substrate processing method of claim 1 , wherein a first inkjet device for discharging the first liquid chemical is different from a second inkjet apparatus for discharging the second chemical liquid. a first inkjet device for discharging a first liquid chemical containing ionized quantum dots onto a substrate;
a second inkjet device for discharging a second liquid chemical containing a reducing agent onto the first liquid liquid of the substrate; and
and a heat treatment apparatus for synthesizing quantum dot ink on the substrate by heat-treating the substrate to react the first liquid chemical and the second liquid chemical. According to claim 13,
The reducing agent comprises a basic material, the substrate processing apparatus. According to claim 13,
The second liquid chemical further includes at least one of a ligand, an antioxidant, and a binder. According to claim 13,
A plurality of banks defining discharge regions are formed on the substrate;
The first inkjet device discharges the first liquid chemical into the discharge area;
wherein the second inkjet device discharges the second liquid chemical into the discharge region. According to claim 16,
The substrate processing apparatus of claim 1 , wherein a volume ratio of the first chemical liquid and the second chemical liquid discharged into the discharge region is 5:5 to 7:3. According to claim 17,
The volume ratio of the first liquid liquid and the second liquid liquid discharged into the discharge region is a:b;
The quantum dot ink synthesized in the ejection area includes a first area and a second area disposed on the first area,
The volumes of the first region and the second region are a/(a+b) and b/(a+b) of the quantum dot ink synthesized in the ejection region, respectively;
The amount of quantum dots formed in the first region is 70% or more of the total quantum dots of the quantum dot ink synthesized in the discharge region. Board;
a plurality of banks formed on the substrate to define discharge regions; and
Including quantum dot ink formed in the ejection area,
The quantum dot ink synthesized in the ejection area includes a first area and a second area disposed on the first area,
The volumes of the first region and the second region are 6/10 and 4/10 of the quantum dot ink synthesized in the ejection region, respectively;
The amount of quantum dots formed in the first region is 70% or more of the total quantum dots of the quantum dot ink synthesized in the discharge region.

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