US20200395543A1 - Ink droplet volume measuring apparatus and ink droplet volume measuring method using the same, and thin film layer forming apparatus using the measuring apparatus, and manufacturing method of display apparatus using the thin film layer forming apparatus - Google Patents
Ink droplet volume measuring apparatus and ink droplet volume measuring method using the same, and thin film layer forming apparatus using the measuring apparatus, and manufacturing method of display apparatus using the thin film layer forming apparatus Download PDFInfo
- Publication number
- US20200395543A1 US20200395543A1 US16/794,102 US202016794102A US2020395543A1 US 20200395543 A1 US20200395543 A1 US 20200395543A1 US 202016794102 A US202016794102 A US 202016794102A US 2020395543 A1 US2020395543 A1 US 2020395543A1
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- US
- United States
- Prior art keywords
- ink droplet
- substrate
- ink
- film layer
- quantum dot
- Prior art date
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- Abandoned
Links
- 239000010409 thin film Substances 0.000 title claims description 71
- 238000000034 method Methods 0.000 title claims description 29
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000000758 substrate Substances 0.000 claims abstract description 78
- 230000001678 irradiating effect Effects 0.000 claims abstract description 7
- 239000002096 quantum dot Substances 0.000 claims description 55
- 238000012360 testing method Methods 0.000 claims description 15
- 239000002105 nanoparticle Substances 0.000 claims description 12
- 238000007789 sealing Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 77
- 150000001875 compounds Chemical class 0.000 description 25
- -1 polyethylene terephthalate Polymers 0.000 description 10
- 239000010408 film Substances 0.000 description 7
- 230000006870 function Effects 0.000 description 7
- 239000000945 filler Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000002245 particle Substances 0.000 description 5
- 239000003086 colorant Substances 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 229910017115 AlSb Inorganic materials 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 2
- 229910005542 GaSb Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910004262 HgTe Inorganic materials 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 229910007709 ZnTe Inorganic materials 0.000 description 2
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011258 core-shell material Substances 0.000 description 2
- SZVJSHCCFOBDDC-UHFFFAOYSA-N ferrosoferric oxide Chemical compound O=[Fe]O[Fe]O[Fe]=O SZVJSHCCFOBDDC-UHFFFAOYSA-N 0.000 description 2
- 229910021480 group 4 element Inorganic materials 0.000 description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052755 nonmetal Inorganic materials 0.000 description 2
- 239000010702 perfluoropolyether Substances 0.000 description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- 229910004611 CdZnTe Inorganic materials 0.000 description 1
- 229910002518 CoFe2O4 Inorganic materials 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N CuO Inorganic materials [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 241000764773 Inna Species 0.000 description 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- 229910026161 MgAl2O4 Inorganic materials 0.000 description 1
- 229910003264 NiFe2O4 Inorganic materials 0.000 description 1
- 229930040373 Paraformaldehyde Natural products 0.000 description 1
- 229910002665 PbTe Inorganic materials 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910005642 SnTe Inorganic materials 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052956 cinnabar Inorganic materials 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(II) oxide Inorganic materials [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- UBEWDCMIDFGDOO-UHFFFAOYSA-N cobalt(II,III) oxide Inorganic materials [O-2].[O-2].[O-2].[O-2].[Co+2].[Co+3].[Co+3] UBEWDCMIDFGDOO-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N iron oxide Inorganic materials [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- AMWRITDGCCNYAT-UHFFFAOYSA-L manganese oxide Inorganic materials [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 1
- VASIZKWUTCETSD-UHFFFAOYSA-N manganese(II) oxide Inorganic materials [Mn]=O VASIZKWUTCETSD-UHFFFAOYSA-N 0.000 description 1
- GEYXPJBPASPPLI-UHFFFAOYSA-N manganese(III) oxide Inorganic materials O=[Mn]O[Mn]=O GEYXPJBPASPPLI-UHFFFAOYSA-N 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 239000002059 nanofabric Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- NQNBVCBUOCNRFZ-UHFFFAOYSA-N nickel ferrite Chemical compound [Ni]=O.O=[Fe]O[Fe]=O NQNBVCBUOCNRFZ-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H01L51/0005—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B12/00—Arrangements for controlling delivery; Arrangements for controlling the spray area
- B05B12/08—Arrangements for controlling delivery; Arrangements for controlling the spray area responsive to condition of liquid or other fluent material to be discharged, of ambient medium or of target ; responsive to condition of spray devices or of supply means, e.g. pipes, pumps or their drive means
- B05B12/082—Arrangements for controlling delivery; Arrangements for controlling the spray area responsive to condition of liquid or other fluent material to be discharged, of ambient medium or of target ; responsive to condition of spray devices or of supply means, e.g. pipes, pumps or their drive means responsive to a condition of the discharged jet or spray, e.g. to jet shape, spray pattern or droplet size
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B13/00—Machines or plants for applying liquids or other fluent materials to surfaces of objects or other work by spraying, not covered by groups B05B1/00 - B05B11/00
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/015—Ink jet characterised by the jet generation process
- B41J2/04—Ink jet characterised by the jet generation process generating single droplets or particles on demand
- B41J2/045—Ink jet characterised by the jet generation process generating single droplets or particles on demand by pressure, e.g. electromechanical transducers
- B41J2/04501—Control methods or devices therefor, e.g. driver circuits, control circuits
- B41J2/04535—Control methods or devices therefor, e.g. driver circuits, control circuits involving calculation of drop size, weight or volume
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/015—Ink jet characterised by the jet generation process
- B41J2/04—Ink jet characterised by the jet generation process generating single droplets or particles on demand
- B41J2/045—Ink jet characterised by the jet generation process generating single droplets or particles on demand by pressure, e.g. electromechanical transducers
- B41J2/04501—Control methods or devices therefor, e.g. driver circuits, control circuits
- B41J2/0456—Control methods or devices therefor, e.g. driver circuits, control circuits detecting drop size, volume or weight
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/015—Ink jet characterised by the jet generation process
- B41J2/04—Ink jet characterised by the jet generation process generating single droplets or particles on demand
- B41J2/045—Ink jet characterised by the jet generation process generating single droplets or particles on demand by pressure, e.g. electromechanical transducers
- B41J2/04501—Control methods or devices therefor, e.g. driver circuits, control circuits
- B41J2/04593—Dot-size modulation by changing the size of the drop
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/026—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness by measuring distance between sensor and object
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0608—Height gauges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/28—Measuring arrangements characterised by the use of optical techniques for measuring areas
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F23/00—Indicating or measuring liquid level or level of fluent solid material, e.g. indicating in terms of volume or indicating by means of an alarm
- G01F23/22—Indicating or measuring liquid level or level of fluent solid material, e.g. indicating in terms of volume or indicating by means of an alarm by measuring physical variables, other than linear dimensions, pressure or weight, dependent on the level to be measured, e.g. by difference of heat transfer of steam or water
- G01F23/28—Indicating or measuring liquid level or level of fluent solid material, e.g. indicating in terms of volume or indicating by means of an alarm by measuring physical variables, other than linear dimensions, pressure or weight, dependent on the level to be measured, e.g. by difference of heat transfer of steam or water by measuring the variations of parameters of electromagnetic or acoustic waves applied directly to the liquid or fluent solid material
- G01F23/284—Electromagnetic waves
- G01F23/292—Light, e.g. infrared or ultraviolet
-
- H01L51/502—
-
- H01L51/56—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
- H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
- B41J2202/01—Embodiments of or processes related to ink-jet heads
- B41J2202/03—Specific materials used
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
- G01B2210/50—Using chromatic effects to achieve wavelength-dependent depth resolution
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/50—Forming devices by joining two substrates together, e.g. lamination techniques
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/70—Testing, e.g. accelerated lifetime tests
Definitions
- Exemplary embodiments of the invention relate generally to an ink droplet volume measuring apparatus, a method of measuring an ink droplet volume by using the ink droplet volume measuring apparatus, a thin-film layer forming apparatus using the ink droplet volume measuring apparatus, and a method of manufacturing a display apparatus by using the thin-film layer forming apparatus.
- each pixel comprises an organic light-emitting device generating single-colored light such as white or blue, and a quantum dot thin-film layer and a color filter as light-blocking units for converting the single-colored light into a desired color from among red, green, and blue and emit the converted light.
- the organic light-emitting device of each pixel when the organic light-emitting device of each pixel generates a single-colored light, the single-colored light passing through the quantum dot thin-film layer and the color filer is converted into one color from among red, green, and blue and then is emitted.
- An image of a desired color is realized by utilizing various combinations of colors of light emitted in appropriate colors.
- a quantum dot thin-film layer is formed by dropping an ink droplet from an inkjet printer.
- an ink droplet that is excessively large may get out of an appropriate position and form a stain, when the ink droplet is too small, the quantum dot thin-film layer may not properly function as a light-blocking unit.
- Exemplary embodiments of the invention provide an ink droplet volume measuring apparatus, which is improved to more precisely measure the volume of the actual ink droplet and reflect the volume to be used in control, a method of measuring a volume of the ink droplet, a thin-film layer forming apparatus using the ink droplet volume measuring apparatus, and a method of manufacturing the display apparatus using the thin-film layer forming apparatus.
- a plurality of the ink droplets may be dropped on the substrate.
- the chromatic confocal sensor may scan the plurality of ink droplets, and the controller may calculate a three-dimensional shape for each of the plurality of droplets.
- the ink droplet may include nanoparticles.
- the ink may include ink for forming a quantum dot thin-film layer.
- a thin-film layer forming apparatus including: an inkjet head including a nozzle dropping an ink droplet; a substrate on which the ink droplet is dropped; a chromatic confocal sensor irradiating light having a plurality of wavelengths to the ink droplet dropped on the substrate and scanning the ink droplet; and a controller feedback-controlling an ejection amount of the nozzle of the inkjet head by calculating the three-dimensional shape of the ink droplet from a signal scanned by the chromatic confocal sensor.
- a plurality of the nozzles may be provided to drop a plurality of ink droplets on the substrate.
- the chromatic confocal sensor may scan the plurality of ink droplets, and the controller may calculate a three-dimensional shape for each of the plurality of ink droplets to feedback-control the ejection amount of each of the plurality of nozzles.
- the ink droplet may include nanoparticles.
- the ink may include ink for forming a quantum dot thin-film layer.
- Another exemplary embodiment of the invention provides a method of measuring a volume of an ink droplet including: dropping an ink droplet on a substrate; irradiating light having a plurality of wavelengths by a chromatic confocal sensor to the ink droplet dropped on the substrate and scanning the ink droplet; and calculating a three-dimensional shape of the ink droplet from a signal scanned by the chromatic confocal sensor.
- a plurality of the ink droplets may be dropped on the substrate.
- the chromatic confocal sensor may scan the plurality of ink droplets to calculate a three-dimensional shape for each of the plurality of ink droplets.
- the ink droplet may include nanoparticles.
- the ink may include ink for forming a quantum dot thin-film layer.
- Another exemplary embodiment provides a method of manufacturing a display apparatus including forming a plurality of light-emitting devices on a first substrate, forming a plurality of quantum dot thin-film layers on a second substrate, and sealing the first substrate and the second substrate such that the plurality of emission devices and the plurality of quantum dot thin-film layers correspond to each other.
- the forming of the quantum dot thin-film layers includes: dropping an ink droplet for forming the quantum dot thin-film layer on a test substrate by using a nozzle of an inkjet head; scanning and irradiating light having a plurality of wavelengths by a chromatic confocal sensor on the ink droplet dropped on the test substrate; obtaining a three-dimensional shape of the ink droplet from a signal scanned by the chromatic confocal sensor to feedback-control an ejection amount of the nozzle; and dropping the feedback-controlled ink droplet on the second substrate to be the quantum dot thin-film layer.
- a plurality of the nozzle may be provided to drop a plurality of ink droplets on the test substrate.
- the chromatic confocal sensor may scan the plurality of ink droplets to calculate a three-dimensional shape for each of the plurality of ink droplets and feedback-control an ejection amount of each of the plurality of nozzles.
- the ink droplet may include nanoparticles.
- the second substrate and the test substrate may be respectively mounted on different stages.
- FIG. 1 is a schematic cross-sectional view of a configuration of a thin film layer forming apparatus including an ink droplet volume measuring apparatus according to an exemplary embodiment of the invention.
- FIG. 2 and FIG. 3 are respectively a side view and a top-plan view showing a volume measuring principle of the ink droplet volume measuring apparatus shown in FIG. 1 .
- FIG. 4 is a cross-sectional view of a display apparatus that is manufactured by using the thin film layer forming apparatus shown in FIG. 1 .
- FIGS. 5A, 5B, 5C, 5D, and 5E are cross-sectional views sequentially showing a process of manufacturing the display apparatus shown in FIG. 4 .
- the illustrated exemplary embodiments are to be understood as providing exemplary features of varying detail of some ways in which the inventive concepts may be implemented in practice. Therefore, unless otherwise specified, the features, components, modules, layers, films, panels, regions, and/or aspects, etc. (hereinafter individually or collectively referred to as “elements”), of the various embodiments may be otherwise combined, separated, interchanged, and/or rearranged without departing from the inventive concepts.
- an element such as a layer
- it may be directly on, connected to, or coupled to the other element or layer or intervening elements or layers may be present.
- an element or layer is referred to as being “directly on,” “directly connected to,” or “directly coupled to” another element or layer, there are no intervening elements or layers present.
- the term “connected” may refer to physical, electrical, and/or fluid connection, with or without intervening elements.
- the D1-axis, the D2-axis, and the D3-axis are not limited to three axes of a rectangular coordinate system, such as the x, y, and z-axes, and may be interpreted in a broader sense.
- the D1-axis, the D2-axis, and the D3-axis may be perpendicular to one another, or may represent different directions that are not perpendicular to one another.
- Spatially relative terms such as “beneath,” “below,” “under,” “lower,” “above,” “upper,” “over,” “higher,” “side” (e.g., as in “sidewall”), and the like, may be used herein for descriptive purposes, and, thereby, to describe one elements relationship to another element(s) as illustrated in the drawings.
- Spatially relative terms are intended to encompass different orientations of an apparatus in use, operation, and/or manufacture in addition to the orientation depicted in the drawings. For example, if the apparatus in the drawings is turned over, elements described as “below” or “beneath” other elements or features would then be oriented “above” the other elements or features.
- the exemplary term “below” can encompass both an orientation of above and below.
- the apparatus may be otherwise oriented (e.g., rotated 90 degrees or at other orientations), and, as such, the spatially relative descriptors used herein interpreted accordingly.
- exemplary embodiments are described herein with reference to sectional and/or exploded illustrations that are schematic illustrations of idealized exemplary embodiments and/or intermediate structures. As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, exemplary embodiments disclosed herein should not necessarily be construed as limited to the particular illustrated shapes of regions, but are to include deviations in shapes that result from, for instance, manufacturing. In this manner, regions illustrated in the drawings may be schematic in nature and the shapes of these regions may not reflect actual shapes of regions of a device and, as such, are not necessarily intended to be limiting.
- each block, unit, and/or module may be implemented by dedicated hardware, or as a combination of dedicated hardware to perform some functions and a processor (e.g., one or more programmed microprocessors and associated circuitry) to perform other functions.
- a processor e.g., one or more programmed microprocessors and associated circuitry
- each block, unit, and/or module of some exemplary embodiments may be physically separated into two or more interacting and discrete blocks, units, and/or modules without departing from the scope of the inventive concepts.
- the blocks, units, and/or modules of some exemplary embodiments may be physically combined into more complex blocks, units, and/or modules without departing from the scope of the inventive concepts.
- FIG. 1 is a schematic cross-sectional view of a configuration of a thin film layer forming apparatus including an ink droplet volume measuring apparatus according to an exemplary embodiment.
- the ink droplet volume measuring device includes: a test substrate 10 on an auxiliary stage 31 ; a chromatic confocal sensor 40 that measures a volume of an ink droplet that is dropped from a nozzle 51 of an inkjet head 50 to the test substrate 10 ; and a controller 60 that compares a value measured by the chromatic confocal sensor 40 with a reference value to feedback-control an ink ejection amount of the inkjet head 50 .
- a thin film layer forming operation is actually performed on a subject substrate 20 on a main stage 30 , and the ink droplet volume measuring apparatus, before actually performing the thin film layer forming operation on the subject substrate 20 , first measures, on the test substrate 10 , whether an appropriate amount of ink droplets are dropped from a plurality of nozzles 51 of the inkjet head 50 , and adjusts each of the nozzles to have an appropriate ejection amount.
- the thin film layer forming apparatus in addition to the ink droplet volume measuring apparatus, further includes the main stage 30 on which the subject substrate 20 is placed, the inkjet head 50 including the plurality of nozzles 51 that drop ink droplets, and the like.
- FIG. 1 shows a structure in which the inkjet head 50 has two nozzles 51 , but the structure is merely an example, and more than the two illustrated nozzles 51 may be arranged in a plurality of rows.
- an ink droplet is dropped on the test substrate 10 by the nozzle 51 of the inkjet head 50 , a volume of the ink droplet is measured by the ink droplet volume measuring apparatus, the controller 60 feedback-controls and adjusts an ejection amount of each nozzle 51 to drop an ink droplet of a desired volume.
- the thin film layer forming operation is actually performed on the subject substrate 20 of the main stage 30 by the nozzle 51 of the inkjet head 50 . Accordingly, the thin film layer is formed on the subject substrate 20 by using the inkjet head 50 , which is set in advance to drop an ink droplet having an accurate volume, and a fine thin film layer may be formed.
- the fine thin film layer may be formed only when the ink droplet volume measuring apparatus accurately measures a volume of an ink droplet.
- the ink droplet volume measuring apparatus accurately measures a volume of an ink droplet.
- the estimated value is calculated based on the assumption that the ink droplet is a hemisphere, but the actual ink droplet is not a perfect hemisphere and may be a shape having a dent spot. Therefore, the difference between the estimated value and the actual volume of the ink droplet further increases.
- a volume of an ink droplet is measured by using the chromatic confocal sensor 40 , as described above.
- FIGS. 2 and 3 are respectively a side view and a plan view schematically showing a principle of measuring a volume of an ink droplet 1 by using the chromatic confocal sensor 40 .
- the chromatic confocal sensor 40 irradiates light L onto the ink droplet 1 and receives reflected light to identify a position of a surface.
- the chromatic confocal sensor 40 does not irradiate light of a single wavelength but instead simultaneously irradiates light having a plurality of wavelengths L 1 , L 2 , and L 3 .
- L 1 , L 2 , and L 3 a case in which the light has three wavelengths L 1 , L 2 , and L 3 are shown to provide a brief example, but light having a greater number of wavelengths may be simultaneously irradiated.
- reflected light of light of a wavelength which is accurately focused on the surface of the ink droplet 1 is received, and a distance from the test substrate 10 to the surface of the ink droplet 1 , that is, a position in the Z direction, may be identified.
- Volume measurement values of the ink droplets obtained by this method is transmitted to the controller 60 , and the controller 60 compares the values with a reference value, increases or decreases an ejection amount from each nozzle 51 , and feedback-controls such that each of the nozzles 51 ejects an ink droplet 1 having an appropriate volume.
- the feedback-control operation may be performed one or more times until the ink droplets 1 each have an appropriate volume.
- a thin-film layer is formed by adjusting the ejection amount of each nozzle 51 based on accurate volume measurement values of the ink droplets 1 , and thus, a thin-film layer, such as a quantum dot thin-film layer, may be very uniformly formed in a desired thickness.
- FIG. 4 is a cross-sectional view of the display apparatus having the quantum dot thin-film layer. Although FIG. 4 only shows only one set of red, green, and blue pixels, it may be understood that an actual product of the inventive concepts includes a plurality of sets of the red, green, and blue pixels.
- the structure of the display apparatus includes a first substrate 110 , on which an organic light-emitting device 120 is arranged, a second substrate 210 , on which quantum dot thin-film layers 230 R and 230 G and color filters 220 R, 220 G, and 220 W as light-blocking units are arranged.
- the first substrate 110 and the second substrate 210 are sealed together with a filler 300 therebetween.
- the inorganic film may include silicon oxide, silicon nitride, and/or silicon oxynitride
- the organic film may include polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyethylene sulfonate, polyoxymethylene, polyarylate, hexamethyldisiloxane, an acryl-based resin (for example, polymethyl methacrylate, polyacrylic acid, and the like), or an arbitrary combination thereof.
- the light-blocking unit includes the quantum dot thin-film layers 230 R and 230 G and the color filters 220 R, 220 G, and 220 W.
- the quantum dot thin-film layers 230 R and 230 G convert the blue light generated from the organic light-emitting diode 120 into a desired color, such as red or green, and the color filter layers 220 R, 220 G, and 220 W filter stray light that may be partially mixed in the converted color to enhance color purity.
- the red pixel and the green pixel include all of the quantum dot thin-film layers 230 R and 230 G and the color filters 220 R and 220 G, and on the contrary, the blue pixel only includes a white color filter layer 220 W, for the light generated from the organic light-emitting diode 120 is blue light.
- the blue pixel since the blue pixel does not have to change the color of light and only transmits the light, the blue pixel only includes the white color filter layer 220 W for filtering the stray light.
- the filler 300 is between the first substrate 110 and the second substrate 210 .
- the filler 300 functions as a gap maintenance unit for maintaining an appropriate gap between the first substrate 110 and the second substrate 210 and also functions as a bonding material. Accordingly, by applying the filler 300 between the first substrate 110 and the second substrate 210 and bonding the first substrate 110 and the second substrate 210 together, the filler 300 appropriately maintains the gap between the first substrate 110 and the second substrate 210 and firmly bonds the first substrate 110 and the second substrate 210 to each other.
- the quantum dot thin-film layers 230 R and 230 G may be formed by dropping ink droplets by using the inkjet head.
- Quantum dots or cores which are light color conversion particles included in the ink for forming the quantum dot thin film layers 230 R and 230 G, may be selected from a Group II-VI compound, a Group III-V compound, a Group IV-VI compound, a Group IV element, a Group IV compound, and a combination thereof.
- a Group II-VI compound may be selected from among: a two-element compound selected from among CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, and a combination thereof; a three-element compound selected from among AgInS, CuInS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, and a combination thereof; and a four-element compound selected from among HgZnTes, CdZnS
- a Group III-V compound may be selected from among: a two-element compound selected from among GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, and a combination thereof; a three-element compound selected from among GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AINAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, and a combination thereof; and a four-element compound selected from among GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, and a combination thereof.
- a Group IV-VI compound may be selected from among: a two-element compound selected from among SnS, SnSe, SnTe, PbS, PbSe, PbTe, and a combination thereof; a three-element compound selected from among SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, and a combination thereof; and a four-element compound selected from among SnPbSSe, SnPbSeTe, SnPbSTe, and a combination thereof.
- a Group IV element may be selected from among Si, Ge, and a combination thereof.
- a Group IV compound may include a two-element compound selected from among SiC, SiGe, and a combination thereof.
- the two-element compound, the third-element compound, and the four-element compound may be included in particles in uniform concentrations, or be in a the same particle in a state of being partially divided according to different concentrations.
- the quantum dot may also have a core-shell structure in which a quantum dot surrounds another quantum dot.
- An interface between the core and the shell may have a concentration gradient in which a concentration of an element in the shell decreases toward a center.
- the quantum dot may have a core-shell structure including a core, which includes nanocrystals, and a shell that surrounds the core.
- the shell of the quantum dot may function as a protective layer for preventing chemical change of the core and maintain properties of the semiconductor and/or a charging layer for giving an electrophoretic property to the quantum dot.
- the shell may include a single layer or multiple layers.
- An interface between the core and the shell may have a concentration gradient in which a concentration of an element in the shell decreases toward a center.
- the shell in the quantum dot may include, for example, an oxide of a metal or non-metal, a semiconductor compound, or a combination thereof.
- the oxide of metal or non-metal may include a two-element compound, such as SiO 2 , Al 2 O 3 , TiO 2 , ZnO, MnO, Mn 2 O 3 , Mn 3 O 4 , CuO, FeO, Fe 2 O 3 , Fe 3 O 4 , CoO, Co 3 O 4 , NiO, or a three-element compound such as MgAl 2 O 4 , CoFe 2 O 4 , NiFe 2 O 4 , or CoMn 2 O 4 , but the inventive concepts are not limited thereto.
- a two-element compound such as SiO 2 , Al 2 O 3 , TiO 2 , ZnO, MnO, Mn 2 O 3 , Mn 3 O 4 , CuO, FeO, Fe 2 O 3 , Fe 3 O 4 , CoO, Co 3 O 4 , NiO, or a three-element compound such as MgAl 2 O 4 , CoFe 2 O 4 , NiFe 2 O
- the semiconductor compound may include, for example, Cds, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, and the like, but the inventive concepts are not related thereto.
- the quantum dot may have a full width of half maximum (FWHM) of about 45 nm or less, preferably about 40 nm or less, more preferably about 30 nm or less, and color purity or color gamut may be enhanced in the above-mentioned range.
- FWHM full width of half maximum
- a field angle of light may widen.
- the shape of a quantum dot is commonly used in the technical field and is not particularly limited.
- the shape of a quantum dot may include a sphere, a pyramid shape, a multi-arm shape or a cubic-shape nano particle, nano tube, nano wire, nano fabric, nano laminar particle, and the like.
- the quantum dot may adjust the color of emitted light according to sizes of particles, and therefore, the quantum dot may have various emission colors, such as blue, red, and green.
- the ink for forming the quantum dot thin-film layers 230 R and 230 G may contain nanoparticles, and the light irradiated from the chromatic confocal sensor 40 may be partially scattered due to the nanoparticles.
- the chromatic confocal sensor 40 irradiates the light having various wavelengths L 1 , L 2 , and L 3 . Therefore, the scattering has a very small influence. In other words, light having a single wavelength, such as laser light, may have a great measurement error when the light is scattered due to nanoparticles.
- the chromatic confocal sensor 40 irradiates the light having the various wavelengths L 1 , L 2 , and L 3 and measures the reflected light, the influence of the scattering breaks up and the scattering has a minimal influence on the measurement.
- the display apparatus including the quantum dot thin-film layers 230 R and 230 G having the above-mentioned structure, may be manufactured in a process as shown in FIGS. 5A through 5E .
- the organic light-emitting diodes 120 are formed on the first substrate 110 and covered by the thin-film encapsulation layer 130 .
- the black matrix 250 and the color filter layers 220 R, 220 G, and 220 W are respectively formed on the second substrate 210 in a photolithography process.
- the color filter layers 220 R, 220 G, and 220 W are formed to respectively correspond to the organic light-emitting diodes 120 .
- the bank 240 is formed to build a boundary between the pixels, as shown in FIG. 5C .
- the bank 240 may include a complex polymer, perfluoro polyether (PFPE), acryl, silicon, epoxy, or the like.
- PFPE perfluoro polyether
- the quantum dot thin-film layers 230 R and 230 G are selectively formed only in the red pixel and the green pixel except the blue pixel.
- the quantum dot thin-film layers 230 R and 230 G are formed at positions to respectively overlap the color filter layers 220 R and 220 G.
- the nozzles 51 of the inkjet head 50 drop ink droplets 1 at positions respectively overlapping the color filters 220 R and 220 G to form the quantum dot thin-film layers 230 R and 230 G.
- the target substrate 20 described with reference to FIG. 1 is the second substrate 210 including the color filters 220 R and 220 G when manufacturing the display apparatus.
- the second substrate 210 is mounted on the main stage 30 , a volume of the ink droplet 1 dropped on the test substrate 10 is measured by using the ink droplet volume measuring apparatus to adjust an ejection amount of each nozzle 51 , and ink droplets 1 having accurate volumes are dropped on the second substrate 210 to form the quantum dot thin-film layers 230 R and 230 G. Accordingly, the quantum dot thin-film layers 230 R and 230 G having very uniform thicknesses may be formed.
- the filler 300 is applied between the first substrate 110 and the second substrate 210 , and the first substrate 110 and the second substrate 210 are bonded to each other.
- the display apparatus in which the organic light-emitting device 120 , the quantum dot thin-film layers 230 R and 230 G, and the color filter layers 220 R, 220 G, and 220 W are realized.
- the present exemplary embodiment shows a case in which the organic light-emitting diode 120 and the organic emission layer 123 are each formed as a common layer over an entire pixel area, but the organic light-emitting diode 120 and the organic emission layer 123 may be separately formed for each pixel. That is, the organic emission layer 123 may be formed as a common layer or separately formed for each pixel.
- a volume of an actual ink droplet may be more precisely measured, feedback-control may be precisely performed, and therefore, stable quality and high productivity may be secured.
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Abstract
Description
- This application claims priority from and the benefit of Korean Patent Application No. 10-2019-0071767, filed on Jun. 17, 2019, which is hereby incorporated by reference for all purposes as if fully set forth herein.
- Exemplary embodiments of the invention relate generally to an ink droplet volume measuring apparatus, a method of measuring an ink droplet volume by using the ink droplet volume measuring apparatus, a thin-film layer forming apparatus using the ink droplet volume measuring apparatus, and a method of manufacturing a display apparatus by using the thin-film layer forming apparatus.
- A display apparatus, such as an organic light-emitting display, realizes an image by generating light according to a principle in which holes and electrons injected from an anode and cathode recombines in an emission layer to emit light. For example, the display apparatus includes pixels emitting light in one of red, green, and blue colors and exhibits a desired color by utilizing color combinations of the pixels.
- To do so, each pixel comprises an organic light-emitting device generating single-colored light such as white or blue, and a quantum dot thin-film layer and a color filter as light-blocking units for converting the single-colored light into a desired color from among red, green, and blue and emit the converted light. In other words, when the organic light-emitting device of each pixel generates a single-colored light, the single-colored light passing through the quantum dot thin-film layer and the color filer is converted into one color from among red, green, and blue and then is emitted. An image of a desired color is realized by utilizing various combinations of colors of light emitted in appropriate colors.
- A quantum dot thin-film layer is formed by dropping an ink droplet from an inkjet printer. In this case, an ink droplet that is excessively large may get out of an appropriate position and form a stain, when the ink droplet is too small, the quantum dot thin-film layer may not properly function as a light-blocking unit.
- Accordingly, in order to delicately form the quantum dot thin-film layer, it is required that a size of the ink droplet is precisely measured, fed back, and an ejection amount is calibrated. In the related art, a method of measuring a width of a bottom surface of a dropped ink droplet and calculating a volume of the ink droplet as an approximate estimated value from the width of the bottom surface of the dropped ink droplet. However, in the above-mentioned method, a volume and an error of an actual ink droplet inevitably increases, and therefore, the ink droplet may not be precisely controlled.
- The above information disclosed in this Background section is only for understanding of the background of the inventive concepts, and, therefore, it may contain information that does not constitute prior art.
- Exemplary embodiments of the invention provide an ink droplet volume measuring apparatus, which is improved to more precisely measure the volume of the actual ink droplet and reflect the volume to be used in control, a method of measuring a volume of the ink droplet, a thin-film layer forming apparatus using the ink droplet volume measuring apparatus, and a method of manufacturing the display apparatus using the thin-film layer forming apparatus.
- Additional features of the inventive concepts will be set forth in part in the description which follows and, in part, will be apparent from the description, or may be learned by practice of the inventive concepts.
- An exemplary embodiment of the invention provides an ink droplet volume measuring apparatus including: a substrate on which an ink droplet is dropped; a chromatic confocal sensor irradiating light having a plurality of wavelengths to the ink droplet dropped on the substrate and scanning the ink droplet; and a controller calculating a three-dimensional shape of the ink droplet from a signal scanned by the chromatic confocal sensor.
- A plurality of the ink droplets may be dropped on the substrate.
- The chromatic confocal sensor may scan the plurality of ink droplets, and the controller may calculate a three-dimensional shape for each of the plurality of droplets.
- The ink droplet may include nanoparticles.
- The ink may include ink for forming a quantum dot thin-film layer.
- Another exemplary embodiment of the invention provides a thin-film layer forming apparatus including: an inkjet head including a nozzle dropping an ink droplet; a substrate on which the ink droplet is dropped; a chromatic confocal sensor irradiating light having a plurality of wavelengths to the ink droplet dropped on the substrate and scanning the ink droplet; and a controller feedback-controlling an ejection amount of the nozzle of the inkjet head by calculating the three-dimensional shape of the ink droplet from a signal scanned by the chromatic confocal sensor.
- A plurality of the nozzles may be provided to drop a plurality of ink droplets on the substrate.
- The chromatic confocal sensor may scan the plurality of ink droplets, and the controller may calculate a three-dimensional shape for each of the plurality of ink droplets to feedback-control the ejection amount of each of the plurality of nozzles.
- The ink droplet may include nanoparticles.
- The ink may include ink for forming a quantum dot thin-film layer.
- Another exemplary embodiment of the invention provides a method of measuring a volume of an ink droplet including: dropping an ink droplet on a substrate; irradiating light having a plurality of wavelengths by a chromatic confocal sensor to the ink droplet dropped on the substrate and scanning the ink droplet; and calculating a three-dimensional shape of the ink droplet from a signal scanned by the chromatic confocal sensor.
- A plurality of the ink droplets may be dropped on the substrate.
- The chromatic confocal sensor may scan the plurality of ink droplets to calculate a three-dimensional shape for each of the plurality of ink droplets.
- The ink droplet may include nanoparticles.
- The ink may include ink for forming a quantum dot thin-film layer.
- Another exemplary embodiment provides a method of manufacturing a display apparatus including forming a plurality of light-emitting devices on a first substrate, forming a plurality of quantum dot thin-film layers on a second substrate, and sealing the first substrate and the second substrate such that the plurality of emission devices and the plurality of quantum dot thin-film layers correspond to each other. The forming of the quantum dot thin-film layers includes: dropping an ink droplet for forming the quantum dot thin-film layer on a test substrate by using a nozzle of an inkjet head; scanning and irradiating light having a plurality of wavelengths by a chromatic confocal sensor on the ink droplet dropped on the test substrate; obtaining a three-dimensional shape of the ink droplet from a signal scanned by the chromatic confocal sensor to feedback-control an ejection amount of the nozzle; and dropping the feedback-controlled ink droplet on the second substrate to be the quantum dot thin-film layer.
- A plurality of the nozzle may be provided to drop a plurality of ink droplets on the test substrate.
- The chromatic confocal sensor may scan the plurality of ink droplets to calculate a three-dimensional shape for each of the plurality of ink droplets and feedback-control an ejection amount of each of the plurality of nozzles.
- The ink droplet may include nanoparticles.
- The second substrate and the test substrate may be respectively mounted on different stages.
- It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the invention as claimed.
- The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate exemplary embodiments of the invention, and together with the description serve to explain the inventive concepts.
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FIG. 1 is a schematic cross-sectional view of a configuration of a thin film layer forming apparatus including an ink droplet volume measuring apparatus according to an exemplary embodiment of the invention. -
FIG. 2 andFIG. 3 are respectively a side view and a top-plan view showing a volume measuring principle of the ink droplet volume measuring apparatus shown inFIG. 1 . -
FIG. 4 is a cross-sectional view of a display apparatus that is manufactured by using the thin film layer forming apparatus shown inFIG. 1 . -
FIGS. 5A, 5B, 5C, 5D, and 5E are cross-sectional views sequentially showing a process of manufacturing the display apparatus shown inFIG. 4 . - In the following description, for the purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of various exemplary embodiments of the invention. As used herein “embodiments” are non-limiting examples of devices or methods employing one or more of the inventive concepts disclosed herein. It is apparent, however, that various exemplary embodiments may be practiced without these specific details or with one or more equivalent arrangements. In other instances, well-known structures and devices are shown in block diagram form in order to avoid unnecessarily obscuring various exemplary embodiments. Further, various exemplary embodiments may be different, but do not have to be exclusive. For example, specific shapes, configurations, and characteristics of an exemplary embodiment may be used or implemented in another exemplary embodiment without departing from the inventive concepts.
- Unless otherwise specified, the illustrated exemplary embodiments are to be understood as providing exemplary features of varying detail of some ways in which the inventive concepts may be implemented in practice. Therefore, unless otherwise specified, the features, components, modules, layers, films, panels, regions, and/or aspects, etc. (hereinafter individually or collectively referred to as “elements”), of the various embodiments may be otherwise combined, separated, interchanged, and/or rearranged without departing from the inventive concepts.
- The use of cross-hatching and/or shading in the accompanying drawings is generally provided to clarify boundaries between adjacent elements. As such, neither the presence nor the absence of cross-hatching or shading conveys or indicates any preference or requirement for particular materials, material properties, dimensions, proportions, commonalities between illustrated elements, and/or any other characteristic, attribute, property, etc., of the elements, unless specified. Further, in the accompanying drawings, the size and relative sizes of elements may be exaggerated for clarity and/or descriptive purposes. When an exemplary embodiment may be implemented differently, a specific process order may be performed differently from the described order. For example, two consecutively described processes may be performed substantially at the same time or performed in an order opposite to the described order. Also, like reference numerals denote like elements.
- When an element, such as a layer, is referred to as being “on,” “connected to,” or “coupled to” another element or layer, it may be directly on, connected to, or coupled to the other element or layer or intervening elements or layers may be present. When, however, an element or layer is referred to as being “directly on,” “directly connected to,” or “directly coupled to” another element or layer, there are no intervening elements or layers present. To this end, the term “connected” may refer to physical, electrical, and/or fluid connection, with or without intervening elements. Further, the D1-axis, the D2-axis, and the D3-axis are not limited to three axes of a rectangular coordinate system, such as the x, y, and z-axes, and may be interpreted in a broader sense. For example, the D1-axis, the D2-axis, and the D3-axis may be perpendicular to one another, or may represent different directions that are not perpendicular to one another. For the purposes of this disclosure, “at least one of X, Y, and Z” and “at least one selected from the group consisting of X, Y, and Z” may be construed as X only, Y only, Z only, or any combination of two or more of X, Y, and Z, such as, for instance, XYZ, XYY, YZ, and ZZ. As used herein, the term “and/or” includes any and all combinations of one or more of the associated listed items.
- Although the terms “first,” “second,” etc. may be used herein to describe various types of elements, these elements should not be limited by these terms. These terms are used to distinguish one element from another element. Thus, a first element discussed below could be termed a second element without departing from the teachings of the disclosure.
- Spatially relative terms, such as “beneath,” “below,” “under,” “lower,” “above,” “upper,” “over,” “higher,” “side” (e.g., as in “sidewall”), and the like, may be used herein for descriptive purposes, and, thereby, to describe one elements relationship to another element(s) as illustrated in the drawings. Spatially relative terms are intended to encompass different orientations of an apparatus in use, operation, and/or manufacture in addition to the orientation depicted in the drawings. For example, if the apparatus in the drawings is turned over, elements described as “below” or “beneath” other elements or features would then be oriented “above” the other elements or features. Thus, the exemplary term “below” can encompass both an orientation of above and below. Furthermore, the apparatus may be otherwise oriented (e.g., rotated 90 degrees or at other orientations), and, as such, the spatially relative descriptors used herein interpreted accordingly.
- The terminology used herein is for the purpose of describing particular embodiments and is not intended to be limiting. As used herein, the singular forms, “a,” “an,” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. Moreover, the terms “comprises,” “comprising,” “includes,” and/or “including,” when used in this specification, specify the presence of stated features, integers, steps, operations, elements, components, and/or groups thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. It is also noted that, as used herein, the terms “substantially,” “about,” and other similar terms, are used as terms of approximation and not as terms of degree, and, as such, are utilized to account for inherent deviations in measured, calculated, and/or provided values that would be recognized by one of ordinary skill in the art.
- Various exemplary embodiments are described herein with reference to sectional and/or exploded illustrations that are schematic illustrations of idealized exemplary embodiments and/or intermediate structures. As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, exemplary embodiments disclosed herein should not necessarily be construed as limited to the particular illustrated shapes of regions, but are to include deviations in shapes that result from, for instance, manufacturing. In this manner, regions illustrated in the drawings may be schematic in nature and the shapes of these regions may not reflect actual shapes of regions of a device and, as such, are not necessarily intended to be limiting.
- As is customary in the field, some exemplary embodiments are described and illustrated in the accompanying drawings in terms of functional blocks, units, and/or modules. Those skilled in the art will appreciate that these blocks, units, and/or modules are physically implemented by electronic (or optical) circuits, such as logic circuits, discrete components, microprocessors, hard-wired circuits, memory elements, wiring connections, and the like, which may be formed using semiconductor-based fabrication techniques or other manufacturing technologies. In the case of the blocks, units, and/or modules being implemented by microprocessors or other similar hardware, they may be programmed and controlled using software (e.g., microcode) to perform various functions discussed herein and may optionally be driven by firmware and/or software. It is also contemplated that each block, unit, and/or module may be implemented by dedicated hardware, or as a combination of dedicated hardware to perform some functions and a processor (e.g., one or more programmed microprocessors and associated circuitry) to perform other functions. Also, each block, unit, and/or module of some exemplary embodiments may be physically separated into two or more interacting and discrete blocks, units, and/or modules without departing from the scope of the inventive concepts. Further, the blocks, units, and/or modules of some exemplary embodiments may be physically combined into more complex blocks, units, and/or modules without departing from the scope of the inventive concepts.
- Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure is a part. Terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and should not be interpreted in an idealized or overly formal sense, unless expressly so defined herein.
-
FIG. 1 is a schematic cross-sectional view of a configuration of a thin film layer forming apparatus including an ink droplet volume measuring apparatus according to an exemplary embodiment. - The ink droplet volume measuring device includes: a
test substrate 10 on anauxiliary stage 31; a chromaticconfocal sensor 40 that measures a volume of an ink droplet that is dropped from anozzle 51 of aninkjet head 50 to thetest substrate 10; and acontroller 60 that compares a value measured by the chromaticconfocal sensor 40 with a reference value to feedback-control an ink ejection amount of theinkjet head 50. That is, a thin film layer forming operation is actually performed on asubject substrate 20 on amain stage 30, and the ink droplet volume measuring apparatus, before actually performing the thin film layer forming operation on thesubject substrate 20, first measures, on thetest substrate 10, whether an appropriate amount of ink droplets are dropped from a plurality ofnozzles 51 of theinkjet head 50, and adjusts each of the nozzles to have an appropriate ejection amount. - The thin film layer forming apparatus, in addition to the ink droplet volume measuring apparatus, further includes the
main stage 30 on which thesubject substrate 20 is placed, theinkjet head 50 including the plurality ofnozzles 51 that drop ink droplets, and the like.FIG. 1 shows a structure in which theinkjet head 50 has twonozzles 51, but the structure is merely an example, and more than the two illustratednozzles 51 may be arranged in a plurality of rows. - Therefore, on the
auxiliary stage 31, an ink droplet is dropped on thetest substrate 10 by thenozzle 51 of theinkjet head 50, a volume of the ink droplet is measured by the ink droplet volume measuring apparatus, thecontroller 60 feedback-controls and adjusts an ejection amount of eachnozzle 51 to drop an ink droplet of a desired volume. After setting is completed, the thin film layer forming operation is actually performed on thesubject substrate 20 of themain stage 30 by thenozzle 51 of theinkjet head 50. Accordingly, the thin film layer is formed on thesubject substrate 20 by using theinkjet head 50, which is set in advance to drop an ink droplet having an accurate volume, and a fine thin film layer may be formed. - However, the fine thin film layer may be formed only when the ink droplet volume measuring apparatus accurately measures a volume of an ink droplet. As mentioned above, in the related art, when a bottom surface width of a dropped ink droplet is used to calculate a volume of the ink droplet as an approximate estimated value, there is a great difference between the estimated value and an actual volume of the ink droplet. Furthermore, the estimated value is calculated based on the assumption that the ink droplet is a hemisphere, but the actual ink droplet is not a perfect hemisphere and may be a shape having a dent spot. Therefore, the difference between the estimated value and the actual volume of the ink droplet further increases.
- In the present exemplary embodiment, a volume of an ink droplet is measured by using the chromatic
confocal sensor 40, as described above. -
FIGS. 2 and 3 are respectively a side view and a plan view schematically showing a principle of measuring a volume of anink droplet 1 by using the chromaticconfocal sensor 40. - First, referring to
FIG. 2 , the chromaticconfocal sensor 40 irradiates light L onto theink droplet 1 and receives reflected light to identify a position of a surface. In this case, the chromaticconfocal sensor 40 does not irradiate light of a single wavelength but instead simultaneously irradiates light having a plurality of wavelengths L1, L2, and L3. In the present exemplary embodiment, a case in which the light has three wavelengths L1, L2, and L3 are shown to provide a brief example, but light having a greater number of wavelengths may be simultaneously irradiated. By doing so, reflected light of light of a wavelength which is accurately focused on the surface of theink droplet 1 is received, and a distance from thetest substrate 10 to the surface of theink droplet 1, that is, a position in the Z direction, may be identified. - Accordingly, as shown in
FIG. 3 , when the chromaticconfocal sensor 40 scans the ink droplet on an X-Y plane and collects positions of spots in a Z axis direction, a three-dimensional shape of theink droplet 1 is obtained. - Since the three-dimensional shape obtained in this way is a result of directly measuring the shape of the
ink droplet 1, by calculating a volume based on the three-dimensional shape, an accurate volume of theink droplet 1 may be obtained. InFIG. 1 , only oneink droplet 1 is shown. However, as each of the plurality of nozzles drop one ink droplet, the light L of the chromatic confocal sensor L passes scanning above all the ink droplets dropped on thetest substrate 10, a three-dimensional shape and a volume may be obtained for eachink droplet 1. - Volume measurement values of the ink droplets obtained by this method is transmitted to the
controller 60, and thecontroller 60 compares the values with a reference value, increases or decreases an ejection amount from eachnozzle 51, and feedback-controls such that each of thenozzles 51 ejects anink droplet 1 having an appropriate volume. The feedback-control operation may be performed one or more times until theink droplets 1 each have an appropriate volume. - Accordingly, a thin-film layer is formed by adjusting the ejection amount of each
nozzle 51 based on accurate volume measurement values of theink droplets 1, and thus, a thin-film layer, such as a quantum dot thin-film layer, may be very uniformly formed in a desired thickness. - Before describing a process of manufacturing a quantum dot thin-film layer by using the thin-film forming apparatus which includes the ink droplet volume measuring apparatus, a structure of the display apparatus having the quantum dot thin-film layer will be first described in detail with reference to
FIG. 4 . -
FIG. 4 is a cross-sectional view of the display apparatus having the quantum dot thin-film layer. AlthoughFIG. 4 only shows only one set of red, green, and blue pixels, it may be understood that an actual product of the inventive concepts includes a plurality of sets of the red, green, and blue pixels. - As shown in
FIG. 4 , the structure of the display apparatus includes afirst substrate 110, on which an organic light-emittingdevice 120 is arranged, asecond substrate 210, on which quantum dot thin-film layers color filters first substrate 110 and thesecond substrate 210 are sealed together with afiller 300 therebetween. - First, the organic light-emitting
device 120 has a structure in which anorganic emission layer 123 is arranged between ananode electrode 122 and acathode electrode 124 and generates light according to a principle in which holes and electrons injected from theanode electrode 122 and thecathode electrode 124 recombine and emit light. In this case, in the organic light-emittingdiode 120, all of the red, green, blue pixels generate the same blue light. That is, the organic light-emittingdevice 120 emits the same blue light, and the light-blocking unit of each pixel converts the blue light into red, green, and blue lights. -
Reference numeral 121 denotes a pixel circuit connected to theanode electrode 122, wherein the pixel circuit includes elements such as a thin-film transistor and a capacitor.Reference numeral 130 denotes a thin-film encapsulation layer which covers and protects the organic light-emitting device. The thin-film encapsulation layer may be a single film including an organic material or an inorganic material, or alternatively, the thin-film encapsulation layer may be multiple films in which organic films and inorganic films are alternately stacked. The inorganic film may include silicon oxide, silicon nitride, and/or silicon oxynitride, and the organic film may include polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyethylene sulfonate, polyoxymethylene, polyarylate, hexamethyldisiloxane, an acryl-based resin (for example, polymethyl methacrylate, polyacrylic acid, and the like), or an arbitrary combination thereof. - The light-blocking unit includes the quantum dot thin-
film layers color filters film layers diode 120 into a desired color, such as red or green, and the color filter layers 220R, 220G, and 220W filter stray light that may be partially mixed in the converted color to enhance color purity. Here, the red pixel and the green pixel include all of the quantum dot thin-film layers color filters color filter layer 220W, for the light generated from the organic light-emittingdiode 120 is blue light. In other words, since the blue pixel does not have to change the color of light and only transmits the light, the blue pixel only includes the whitecolor filter layer 220W for filtering the stray light. -
Reference numeral 250 denotes a black matrix arranged between the pixels for blocking lights, andreference numeral 240 denotes a bank for making a boundary between the light-blocking units of each pixel. - The
filler 300 is between thefirst substrate 110 and thesecond substrate 210. Thefiller 300 functions as a gap maintenance unit for maintaining an appropriate gap between thefirst substrate 110 and thesecond substrate 210 and also functions as a bonding material. Accordingly, by applying thefiller 300 between thefirst substrate 110 and thesecond substrate 210 and bonding thefirst substrate 110 and thesecond substrate 210 together, thefiller 300 appropriately maintains the gap between thefirst substrate 110 and thesecond substrate 210 and firmly bonds thefirst substrate 110 and thesecond substrate 210 to each other. - As described above, the quantum dot thin-
film layers - A Group II-VI compound may be selected from among: a two-element compound selected from among CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, and a combination thereof; a three-element compound selected from among AgInS, CuInS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, and a combination thereof; and a four-element compound selected from among HgZnTes, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, and a combination thereof.
- A Group III-V compound may be selected from among: a two-element compound selected from among GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, and a combination thereof; a three-element compound selected from among GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AINAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, and a combination thereof; and a four-element compound selected from among GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, and a combination thereof.
- A Group IV-VI compound may be selected from among: a two-element compound selected from among SnS, SnSe, SnTe, PbS, PbSe, PbTe, and a combination thereof; a three-element compound selected from among SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, and a combination thereof; and a four-element compound selected from among SnPbSSe, SnPbSeTe, SnPbSTe, and a combination thereof. A Group IV element may be selected from among Si, Ge, and a combination thereof. A Group IV compound may include a two-element compound selected from among SiC, SiGe, and a combination thereof.
- In this case, the two-element compound, the third-element compound, and the four-element compound may be included in particles in uniform concentrations, or be in a the same particle in a state of being partially divided according to different concentrations. The quantum dot may also have a core-shell structure in which a quantum dot surrounds another quantum dot. An interface between the core and the shell may have a concentration gradient in which a concentration of an element in the shell decreases toward a center.
- In some exemplary embodiments, the quantum dot may have a core-shell structure including a core, which includes nanocrystals, and a shell that surrounds the core. The shell of the quantum dot may function as a protective layer for preventing chemical change of the core and maintain properties of the semiconductor and/or a charging layer for giving an electrophoretic property to the quantum dot. The shell may include a single layer or multiple layers. An interface between the core and the shell may have a concentration gradient in which a concentration of an element in the shell decreases toward a center. The shell in the quantum dot may include, for example, an oxide of a metal or non-metal, a semiconductor compound, or a combination thereof.
- For example, the oxide of metal or non-metal may include a two-element compound, such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, NiO, or a three-element compound such as MgAl2O4, CoFe2O4, NiFe2O4, or CoMn2O4, but the inventive concepts are not limited thereto.
- The semiconductor compound may include, for example, Cds, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, and the like, but the inventive concepts are not related thereto.
- The quantum dot may have a full width of half maximum (FWHM) of about 45 nm or less, preferably about 40 nm or less, more preferably about 30 nm or less, and color purity or color gamut may be enhanced in the above-mentioned range. In addition, as light emitted from the quantum dot is irradiated in all directions, a field angle of light may widen.
- In addition, the shape of a quantum dot is commonly used in the technical field and is not particularly limited. However, more specifically, the shape of a quantum dot may include a sphere, a pyramid shape, a multi-arm shape or a cubic-shape nano particle, nano tube, nano wire, nano fabric, nano laminar particle, and the like.
- The quantum dot may adjust the color of emitted light according to sizes of particles, and therefore, the quantum dot may have various emission colors, such as blue, red, and green.
- As described above, the ink for forming the quantum dot thin-
film layers confocal sensor 40 may be partially scattered due to the nanoparticles. However, as described above, the chromaticconfocal sensor 40 irradiates the light having various wavelengths L1, L2, and L3. Therefore, the scattering has a very small influence. In other words, light having a single wavelength, such as laser light, may have a great measurement error when the light is scattered due to nanoparticles. However, since the chromaticconfocal sensor 40 irradiates the light having the various wavelengths L1, L2, and L3 and measures the reflected light, the influence of the scattering breaks up and the scattering has a minimal influence on the measurement. - The display apparatus, including the quantum dot thin-
film layers FIGS. 5A through 5E . - First, as shown in
FIG. 5A , the organic light-emittingdiodes 120 are formed on thefirst substrate 110 and covered by the thin-film encapsulation layer 130. - As shown in
FIG. 5B , theblack matrix 250 and the color filter layers 220R, 220G, and 220W are respectively formed on thesecond substrate 210 in a photolithography process. The color filter layers 220R, 220G, and 220W are formed to respectively correspond to the organic light-emittingdiodes 120. - Next, the
bank 240 is formed to build a boundary between the pixels, as shown inFIG. 5C . Thebank 240 may include a complex polymer, perfluoro polyether (PFPE), acryl, silicon, epoxy, or the like. - Next, as shown in
FIG. 5D , the quantum dot thin-film layers film layers - In this case, the
nozzles 51 of theinkjet head 50drop ink droplets 1 at positions respectively overlapping thecolor filters film layers target substrate 20 described with reference toFIG. 1 is thesecond substrate 210 including thecolor filters second substrate 210 is mounted on themain stage 30, a volume of theink droplet 1 dropped on thetest substrate 10 is measured by using the ink droplet volume measuring apparatus to adjust an ejection amount of eachnozzle 51, andink droplets 1 having accurate volumes are dropped on thesecond substrate 210 to form the quantum dot thin-film layers film layers - After forming the quantum dot thin-
film layers FIG. 5E , thefiller 300 is applied between thefirst substrate 110 and thesecond substrate 210, and thefirst substrate 110 and thesecond substrate 210 are bonded to each other. By doing so, as shown inFIG. 4 , the display apparatus in which the organic light-emittingdevice 120, the quantum dot thin-film layers - The present exemplary embodiment shows a case in which the organic light-emitting
diode 120 and theorganic emission layer 123 are each formed as a common layer over an entire pixel area, but the organic light-emittingdiode 120 and theorganic emission layer 123 may be separately formed for each pixel. That is, theorganic emission layer 123 may be formed as a common layer or separately formed for each pixel. - Therefore, as described above, by using the ink droplet volume measuring apparatus, the method of measuring the ink droplet volume, and the method of forming a quantum dot thin-film layer of the display apparatus, a volume of an actual ink droplet may be more precisely measured, feedback-control may be precisely performed, and therefore, stable quality and high productivity may be secured.
- Although certain exemplary embodiments have been described herein, other embodiments and modifications will be apparent from this description. Accordingly, the inventive concepts are not limited to such embodiments, but rather to the broader scope of the appended claims and various obvious modifications and equivalent arrangements as would be apparent to a person of ordinary skill in the art.
Claims (20)
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US18/605,154 US20240251648A1 (en) | 2019-06-17 | 2024-03-14 | Ink droplet volume measuring apparatus and ink droplet volume measuring method using the same, and thin film layer forming apparatus using the measuring apparatus, and manufacturing method of display apparatus using the thin film layer forming apparatus |
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KR1020190071767A KR20200144198A (en) | 2019-06-17 | 2019-06-17 | Ink droplet volume measuring apparatus and the ink droplet volume measuring method using the same, and the thin film layer forming apparatus using the measuring apparatus, and the manufacturing method of a display apparatus using the forming apparatus |
KR10-2019-0071767 | 2019-06-17 |
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US18/605,154 Pending US20240251648A1 (en) | 2019-06-17 | 2024-03-14 | Ink droplet volume measuring apparatus and ink droplet volume measuring method using the same, and thin film layer forming apparatus using the measuring apparatus, and manufacturing method of display apparatus using the thin film layer forming apparatus |
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CN112097674A (en) | 2020-12-18 |
KR20200144198A (en) | 2020-12-29 |
US20240251648A1 (en) | 2024-07-25 |
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