KR20230049897A - Simulation apparatus and simulation method - Google Patents

Abstract

A simulation apparatus and method are provided. The simulation method comprises the steps of: performed by a computing device and preparing a model including first to third micro-patterns sequentially arranged to have different first and second intervals, a first chemical liquid filled to have a first pressure between the first and second micro-patterns, and a second chemical liquid filled to have a second pressure between the second and third micro-patterns; and calculating the displacement of the first to third micro-patterns deformed by an external force, the difference between the first and second pressures by considering the deviation of a first gap between the first and second micro-patterns before deformation and a second gap between the second and third micro-patterns, and the height of the first to third micro-patterns at which the elastic recovery properties of the first to third micro-patterns are balanced.

Description

Simulation apparatus and method {Simulation apparatus and simulation method}

The present invention relates to a simulation apparatus and method.

As the degree of integration of a semiconductor device increases, the line width of a pattern continuously decreases and the aspect ratio increases accordingly. A micropattern having a high aspect ratio is easily deformed by an external force, and when the pattern deformity is severe, a leaning phenomenon in which the patterns adhere to each other may occur without being restored to the original state. Such pattern leaning is considered a defect because it interferes with the intended function of the device, and has a great impact on the production and yield of the device.

Meanwhile, when manufacturing a semiconductor device, various processes such as photography, etching, ashing, ion implantation, thin film deposition, and cleaning are performed. Such a process may be performed through a liquid chemical solution such as IPA or DIW, or a chemical solution phase-changed to a supercritical state.

Pattern thinning mainly occurs in the process of drying the cleaning solution after the cleaning process, and capillary action due to the surface tension of the cleaning solution is known as one cause. In order to stably perform such a cleaning process, there is an increasing need to accurately predict the line width and height of the micropattern.

Meanwhile, a theoretical method can be used to predict the thinning condition of the micropattern in relation to the pressure of the chemical solution used in the process. A conventional theoretical model is a model that calculates a critical height of a micropattern at which the pressure of a chemical liquid filled between micropatterns and the elastic restoring force of the micropattern are in equilibrium. Through this, it is possible to predict a critical aspect ratio at which thinning of the micropattern does not occur. However, it is difficult to accurately predict actual micro-pattern leaning conditions because it does not consider processing deviation of the micro-pattern before deformation by external force occurs in the micro-pattern.

An object to be solved by the present invention is to provide a simulation device and method for accurately predicting the thinning conditions of a micropattern in consideration of the processing deviation of the micropattern before deformation by an external force occurs in the micropattern.

The tasks of the present invention are not limited to the tasks mentioned above, and other tasks not mentioned will be clearly understood by those skilled in the art from the following description.

One aspect (aspect) of the simulation method of the present invention for achieving the above object is, in the simulation method performed by a computing device, the first to third fine particles sequentially arranged to have different first and second intervals. pattern, and a first chemical solution filled to have a first pressure between the first and second micropatterns and a second chemical solution filled to have a second pressure different from the first pressure between the second and third micropatterns preparing a model, and displacement of the first to third micropatterns deformed by an external force, and a first interval between the first and second micropatterns before the deformation and the second and third micropatterns. Calculating heights of the first to third micropatterns at which the difference between the first and second pressures and the elastic restoring force of the first to third micropatterns are balanced in consideration of the deviation of the second interval therebetween include

Inclinations of sidewalls of the first to third micropatterns may form an acute angle.

After calculating the heights of the first to third micropatterns, the aspect ratio of the first to third micropatterns is divided by the height of the first to third micropatterns by the width of the first to third micropatterns. It may further include the step of calculating .

As the modulus of elasticity of the first to third micropatterns increases, the heights of the first to third micropatterns may increase.

As the surface tension of the first and second liquid chemicals decreases, the heights of the first to third micropatterns may increase.

When the contact angle of the first chemical between the first and second micropatterns and the contact angle of the second chemical between the second and third micropatterns are 90, the heights of the first to third micropatterns are can be max.

The first to third micropatterns may include Si.

The first and second liquid chemicals may be isopropyl alcohol (IPA) or deionized water (DIW).

을 만족하는 상기 제1 내지 제3 미세패턴의 임계 높이를 계산하되, 상기 제1 내지 제3 미세패턴의 임계 높이를 계산하는 것은, 서로 인접한 상기 제1 및 제2 미세패턴 사이의 간격 및 서로 인접한 상기 제2 및 제3 미세패턴 사이의 간격의 편차를 고려하는 것을 포함한다.One aspect (aspect) of the simulation method of the present invention for achieving the above object is, in the simulation method performed by a computing device, the first to third fine particles sequentially arranged to have different first and second intervals. pattern, and a first chemical solution filled to have a first pressure between the first and second micropatterns and a second chemical solution filled to have a second pressure different from the first pressure between the second and third micropatterns A model is prepared, and by the following Equations (1), (2) and (3), a function of the displacement of the first to third micropatterns by an external force

Calculating the critical heights of the first to third micropatterns that satisfy and considering the deviation of the interval between the second and third micropatterns.

Equation (1)

Equation (2)

Equation (3)

θ: 제1 및 제2 약액의 접촉각, E: 제1 내지 제3 미세패턴의 탄성계수, t: 제1 내지 제3 미세패턴의 폭, H: 제1 내지 제3 미세패턴의 임계 높이이다)(Where, P1: first pressure, P2: second pressure, F1: elastic restoring force of the first to third micropatterns, δ: displacement by external force of the first to third micropatterns, D1: first and second micropatterns spacing of micropatterns, D2: spacing of second and third micropatterns, γ: surface tension of chemical solution, α: inclination of sidewalls of first to third micropatterns,

θ: contact angle of the first and second chemical solutions, E: elastic modulus of the first to third micropatterns, t: width of the first to third micropatterns, H: critical height of the first to third micropatterns)

As the moduli of elasticity of the first to third micropatterns increase, the critical heights of the first to third micropatterns may increase.

As the surface tension of the first and second liquid chemicals decreases, critical heights of the first to third micropatterns may increase.

When the contact angles of the first and second liquid chemicals are 90 degrees, the critical heights of the first to third micropatterns may be maximum.

One side of the simulation apparatus of the present invention for achieving the other object includes a processor and a memory, wherein the memory has first to third processors sequentially arranged to have first and second intervals different from each other. micropatterns, a first chemical liquid filled to have a first pressure between the first and second micropatterns, and a second chemical liquid filled to have a second pressure different from the first pressure between the second and third micropatterns A model including the displacement of the first to third micropatterns deformed by an external force, and the first spacing between the first and second micropatterns before the deformation and the second and third micropatterns Instructions for calculating heights of the first to third micropatterns at which the difference between the first and second pressures and the elastic restoring forces of the first to third micropatterns are balanced in consideration of a deviation of 2 intervals. ) can be stored.

Details of other embodiments are included in the detailed description and drawings.

1 is a flowchart illustrating a simulation method according to some embodiments of the present invention.
FIG. 2 is an exemplary diagram for explaining a model used in the simulation method of FIG. 1 .
FIG. 3 is a view for explaining a relationship between a difference in pressure of a chemical liquid and an elastic restoring force of a micropattern in the model used in the simulation method of FIG. 1 .
FIG. 4 is an exemplary diagram for explaining a model used in the simulation method of FIG. 1 .
5 is a block diagram for explaining a simulation device according to some embodiments of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. Advantages and features of the present invention, and methods for achieving them, will become clear with reference to the embodiments described below in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below and may be implemented in various different forms, only the present embodiments make the disclosure of the present invention complete, and the common knowledge in the art to which the present invention belongs It is provided to fully inform the holder of the scope of the invention, and the present invention is only defined by the scope of the claims. Like reference numbers designate like elements throughout the specification.

When an element or layer is referred to as being "on" or "on" another element or layer, it is not only directly on the other element or layer, but also when another layer or other element is intervening therebetween. All inclusive. On the other hand, when an element is referred to as “directly on” or “directly on”, it indicates that another element or layer is not intervened.

The spatially relative terms "below", "beneath", "lower", "above", "upper", etc. It can be used to easily describe the correlation between elements or components and other elements or components. Spatially relative terms should be understood as encompassing different orientations of elements in use or operation in addition to the orientations shown in the figures. For example, when flipping elements shown in the figures, elements described as “below” or “beneath” other elements may be placed “above” the other elements. Thus, the exemplary term “below” may include directions of both below and above. Elements may also be oriented in other orientations, and thus spatially relative terms may be interpreted according to orientation.

Although first, second, etc. are used to describe various elements, components and/or sections, it is needless to say that these elements, components and/or sections are not limited by these terms. These terms are only used to distinguish one element, component or section from another element, component or section. Accordingly, it goes without saying that the first element, first element, or first section referred to below may also be a second element, second element, or second section within the spirit of the present invention.

Terminology used herein is for describing the embodiments and is not intended to limit the present invention. In this specification, singular forms also include plural forms unless specifically stated otherwise in a phrase. As used herein, "comprises" and/or "comprising" means that a stated component, step, operation, and/or element is present in the presence of one or more other components, steps, operations, and/or elements. or do not rule out additions.

Unless otherwise defined, all terms (including technical and scientific terms) used in this specification may be used in a meaning commonly understood by those of ordinary skill in the art to which the present invention belongs. In addition, terms defined in commonly used dictionaries are not interpreted ideally or excessively unless explicitly specifically defined.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the description with reference to the accompanying drawings, the same or corresponding components regardless of reference numerals are given the same reference numerals, Description is omitted.

The simulation method described below may be performed by a computing device. The computing device includes at least one of a computer, workstation, server, desktop PC, netbook, smart phone, tablet PC, mobile phone, video phone, e-book reader, PDA, PMP, MP3 player, medical device, electronic device, or wearable device. can include Also, the computing device may be implemented as a centrally managed data storage environment or a distributed data storage environment.

1 is a flowchart illustrating a simulation method according to some embodiments of the present invention. FIG. 2 is an exemplary diagram for explaining a model used in the simulation method of FIG. 1 . FIG. 3 is a view for explaining a relationship between a difference in pressure of a chemical liquid and an elastic restoring force of a micropattern in the model used in the simulation method of FIG. 1 . FIG. 4 is an exemplary diagram for explaining a model used in the simulation method of FIG. 1 .

A model used in the simulation method according to some embodiments is implemented by a simulation device (ie, a computing device). Specifically, the simulation device includes at least one module for simulating a process in the chamber (ie, a process environment change in the chamber according to the progress of a specific process). The simulation device includes, for example, a temperature module for simulating a temperature change in the chamber, a pressure module for simulating a pressure change in the chamber, a chemical solution module for simulating the movement/density of the chemical solution in the chamber, and a movement of the chemical solution. A control for predicting and calculating the movement (evaporation, displacement, etc.) of a chemical solution by controlling a modeling module for copying the shape (eg, pattern) of a substrate, a temperature module, a pressure module, a chemical solution module, a modeling module, etc. modules, etc.

Such a simulation device may be modeled as shown in FIGS. 2 and 4 , for example.

Specifically, the model models the micropattern 100 . Here, the micropattern 100 may have a trench shape, a via hole shape, a line and space pattern shape, or the like. That is, the fine pattern 100 may mean a pattern in which at least one etching process has been performed. In FIGS. 2 and 4 , a trench shape is illustratively shown, but is not limited thereto.

The model may be constructed as a database including at least one of surface characteristics (wettability), size, shape, and process environment (temperature, pressure) of the micropattern 100 .

Referring to FIGS. 1 to 4 , a model including first to third micropatterns 101 , 102 , and 103 sequentially arranged to have first and second intervals D1 and D2 is prepared. In this case, the second micropattern 102 may be disposed between the first and third micropatterns 101 and 103 .

That is, the first and second micropatterns 101 and 102 may be adjacent to each other, and the second and third micropatterns 102 and 103 may be adjacent to each other. In this case, trenches may be formed between the first and second micropatterns 101 and 102 and between the second and third micropatterns 102 and 103, respectively.

In addition, each of the first to third micropatterns 101, 102, and 103 may include Si (silicon). For example, each of the first to third micropatterns 101, 102, and 103 is made of silicon oxide (SiO ₂ ). or poly-Si. However, it is not limited thereto.

The first chemical liquid 110 filled to have a first pressure P1 between the first and second micropatterns 101 and 102 and the second pressure P2 between the second and third micropatterns 102 and 103 ) Prepare a model including the second chemical liquid 120 filled to have. That is, the first chemical liquid 110 and the second chemical liquid 120 may fill each trench.

Here, the first pressure P1 and the second pressure P2 may be different from each other (S10). In addition, the first and second liquid chemicals 110 and 120 may be isopropyl alcohol (IPA) and/or deionized water (DIW), but are not limited thereto.

Each of the first to third micropatterns 101 , 102 , and 103 may be formed on the support member 130 . The support member 130 may include the same material as the micropattern 100 . However, the material of the support member 130 is not particularly limited as long as it can support the micropattern 100 to form a model used in the simulation method according to some embodiments.

)는 지지 부재(130)의 상면과 제1 내지 제3 미세패턴의(101, 102, 103) 측벽 각각이 이루는 각도를 의미할 수 있다.Inclination of sidewalls of the first to third micropatterns 101, 102, and 103 to be described later (

) may mean an angle formed between the upper surface of the support member 130 and the sidewalls of the first to third micropatterns 101, 102, and 103, respectively.

Considering the displacement (δ) of the first to third micropatterns 101, 102, and 103 deformed by an external force, the difference between the first and second pressures (P ₁ -P ₂ ) and the first to third micropatterns The heights (H) of the first to third micropatterns 101, 102, and 103 in which the elastic restoring forces (F ₁ ) of the patterns 101, 102, and 103 are balanced are calculated.

In some embodiments, the external force may mean perturbation that may cause collapse or leaning of the micropattern. However, the technical spirit of the present invention is not limited thereto.

Deformation occurring in the micropattern 100 due to disturbance may be referred to as displacement δ of the first to third micropatterns 101 , 102 , and 103 deformed by an external force. Here, the displacement (δ) is the upper surface of each of the first to third micropatterns 101, 102, and 103 before the external force acts and the first to third micropatterns 101, 102, and 103 after the external force acts. It may mean a difference in distance between each top surface.

Referring to FIG. 2(a) , the first pressure P ₁ of the first chemical liquid 110 and the second pressure P ₂ of the second chemical liquid 120 do not coincide with each other. That is, when the slope of each sidewall of the first to third micropatterns 101, 102, and 103 is 90 degrees, the first pressure P ₁ of the first chemical liquid 110 and the second chemical liquid 120 The second pressure P ₂ may be calculated using Equations (1) and (2) below, respectively.

[Equation (1)]

[Equation (2)]

는 제1 및 제2 약액(110, 120) 각각의 표면장력을 의미한다. t는 제1 내지 제3 미세패턴(101, 102, 103) 각각의 폭을 의미한다. p는 제1 내지 제3 미세패턴(101, 102, 103) 간의 간격 즉 피치(pitch)를 의미한다. In the above expression,

Means the surface tension of each of the first and second liquid chemicals (110, 120). t denotes a width of each of the first to third micropatterns 101, 102, and 103. p denotes an interval between the first to third micropatterns 101, 102, and 103, that is, a pitch.

In addition, the elastic restoring force (F 1 ) of each of the pattern walls of the first to third micropatterns 101, 102, and ₁₀₃ in which the displacement (δ) has occurred may be calculated by Equation (3) below.

[Equation (3)]

는 제1 내지 제3 미세패턴(101, 102, 103) 각각의 탄성계수를 의미한다.In the above expression,

Means the elastic modulus of each of the first to third micropatterns 101, 102, and 103.

An inclination of sidewalls of the first to third micropatterns 101 , 102 , and 103 may be 90 degrees with respect to the upper surface of the support member 130 . In this case, the simulation model may be referred to as a vertical model.

In this case, the difference in pressure between the first and second liquid chemicals 110 and 120 (P ₁ -P ₂ ) acting on the micropattern 100 and the elasticity of the first to third micropatterns 101, 102, and 103 The equilibrium between the restoring forces (F ₁ ) becomes imbalanced. Referring to FIG. 3 , at this time, the leaning condition of the micropattern 100 can be predicted from the relation of the force applied to the micropattern 100 .

일 때)에는 미세패턴(100)의 리닝이 일어나는 임계 변위(δ_s)보다 작은 변위(δ)는 탄성 회복력(F_1a)에 의해 회복 가능하다. When the pressure difference (P ₁ -P ₂ ) of the chemical solution acting on the micropattern 100 is smaller than the elastic restoring force (F _1a ) (ie,

When ), the displacement (δ) smaller than the critical displacement (δ _s ) at which the thinning of the micropattern 100 occurs is recoverable by the elastic restoring force (F _1a ).

일 때)에는 미세패턴(100)의 변위(δ)는 탄성 회복력(F_1c)에 의해 회복되지 않으므로 미세패턴(100)의 리닝이 일어나게 된다.However, when the difference in pressure of the chemical solution acting on the micropattern 100 (P ₁ -P ₂ ) is greater than the elastic restoring force (F _1c ) (ie,

When ), the displacement δ of the micropattern 100 is not recovered by the elastic restoring force F _1c , so that the micropattern 100 is thinned.

That is, it is important to predict the critical displacement (δ _s ) of the micropattern 100 recoverable by the elastic restoring force (F _1b ), and at this time, the height (H) of the micropattern 100 is the following displacement (δ Corresponds to a height that satisfies Equation (4) for ).

[Equation (4)]

는 전술한 수학식(1), (2)로부터 다음과 같이 수학식(5)로 나타낼 수 있다.here,

Can be expressed as Equation (5) from the above-described Equations (1) and (2) as follows.

[Equation (5)]

The displacement (δ) for which the value of Equation (5) above satisfies 0 can be expressed by Equation (6) as follows.

[Equation (6)]

)가 될 수 있다.In Equation (6) above, in order for displacement (δ) to have a real value, the value in the root must be greater than or equal to 0, and the height when the value becomes 0 is the critical height of the micropattern 100 (

) can be

[Equation (7)]

)는 예각을 이룰 수 있다. 제1 내지 제3 미세패턴(101, 102, 103) 각각은 상면의 폭이 하면의 폭보다 작은 테이퍼진(tapered) 형상일 수 있다. 이 경우, 시뮬레이션 모델은 trapezoidal 모델로 지칭되어 vertical 모델과 구분될 수 있다. 이 경우, vertical 모델의 경우에 비하여 미세패턴(100)의 상면의 폭(t)이 작을 수 있다.Meanwhile, referring to FIG. 2(b), the slope of the sidewalls of the first to third micropatterns 101, 102, and 103 (

) can form an acute angle. Each of the first to third micropatterns 101, 102, and 103 may have a tapered shape in which an upper surface width is smaller than a lower surface width. In this case, the simulation model is referred to as a trapezoidal model and can be distinguished from a vertical model. In this case, the width t of the upper surface of the fine pattern 100 may be smaller than that of the vertical model.

)가 예각인 경우의 제1 내지 제3 미세패턴(101, 102, 103)의 임계 높이(

)를 계산할 수 있다.In this case, the elastic restoring force (F ₁ ) is calculated using the principle of virtual work, and through this, the slope of the sidewall of the first to third micropatterns 101, 102, and 103 (

) is an acute angle, the critical height (

) can be calculated.

[Equation (8)]

와

는 다음 수학식(9), (10)과 같다.in the above expression

and

Is equal to the following equations (9) and (10).

[Equation (9)]

[Equation (10)]

)를 고려하여 각각 하기의 수학식(11), (12)로 계산될 수 있다.In this case, the first pressure (P ₁ ) of the first chemical liquid 110 and the second pressure (P ₂ ) of the second chemical liquid 120 are the slope of the side wall (

) and can be calculated by the following equations (11) and (12), respectively.

[Equation (11)]

[Equation (12)]

)를 하기의 수학식(13)과 같이 계산할 수 있다.As in FIG. 2(a), the height H of the micropattern 100 corresponds to a height that satisfies Equation (4) for displacement δ, and the critical height of the micropattern 100 (

) can be calculated as in Equation (13) below.

[Equation (13)]

1 and 4, calculating the height H of the first to third micropatterns 101, 102, and 103 described above is based on the first distance D ₁ before deformation and the second distance ( D ₂ ) includes considering the deviation between (S20).

That is, in addition to the displacement that occurs in the micropattern 100 due to external force, a difference in distance between upper surfaces of the micropattern 100 that may occur during processing of the micropattern 100 may be considered. In this case, the first distance D ₁ and the second distance D ₂ may not coincide with each other due to deviations occurring during processing of the micropattern 100 . Here, the first distance D ₁ and the second distance D ₂ are the distance between the upper surfaces of the first and second micropatterns 101 and 102 and the distances of the second and third micropatterns 102 and 103, respectively. Means the distance between the top surfaces.

Referring to FIG. 4(a) , when the slope of each sidewall of the first to third micropatterns 101, 102, and 103 is 90 degrees, the first pressure P ₁ of the first liquid chemical 110 and The second pressure P ₂ of the second liquid chemical 120 may be calculated using Equations (14) and (15) below, respectively.

[Equation (14)]

[Equation (15)]

In addition, as in FIG. 2(a), the elastic restoring force (F ₁ ) of each pattern wall of the first to third micropatterns 101, 102, and 103 may be calculated by Equation (3) described above. . The height (H) of the micropattern 100 corresponds to a height that satisfies Equation (4) for displacement (δ).

)는 예각을 이룰 수 있다. Meanwhile, referring to FIG. 4(b), the slope of the sidewalls of the first to third micropatterns 101, 102, and 103 (

) can form an acute angle.

)가 예각인 경우의 제1 내지 제3 미세패턴(101, 102, 103)의 임계 높이(

)를 계산할 수 있다.In this case, as in FIG. 2 (b), the elastic restoring force (F ₁ ) is calculated using the principle of virtual work, and through this, the first to third micropatterns 101, 102, and 103 ), the slope of the sidewall of (

) is an acute angle, the critical height (

) can be calculated.

)를 고려하여 각각 하기의 수학식(16), (17)로 계산될 수 있다.In this case, the first pressure (P ₁ ) of the first chemical liquid 110 and the second pressure (P ₂ ) of the second chemical liquid 120 are the slope of the side wall (

) can be calculated by the following equations (16) and (17), respectively.

[Equation (16)]

[Equation (17)]

A correlation between the material of the micropattern 100 and/or the mechanical properties of the micropattern 100 and the leaning condition of the micropattern 100 may be predicted by a simulation method according to some embodiments. For example, as the modulus of elasticity of the first to third micropatterns 101, 102, and 103 increases, the height H of the first to third micropatterns 101, 102, and 103 may increase. .

In addition, a correlation between the type, temperature, and/or surface tension of the chemical solution filled between the micropatterns 100 and the thinning conditions of the micropatterns 100 can be predicted by the simulation method according to some embodiments. For example, as the surface tension of the first and second liquid chemicals 110 and 120 increases, the heights H of the first to third micropatterns 101 , 102 and 103 may decrease.

In addition, the correlation between the contact angles of the first and second liquid chemicals 110 and 120 filled between the micropatterns 100 and the leaning conditions of the micropatterns 100 can be predicted by the simulation method according to some embodiments. there is. For example, the contact angle of the first chemical liquid 110 between the first and second micropatterns 101 and 102 and the contact angle of the second chemical liquid 120 between the second and third micropatterns 102 and 103 are When each is 90, the height H of the first to third micropatterns 101, 102, and 103 may be maximum.

A critical aspect ratio of the micropattern 100 may be predicted by preparing a model in which the IPA is filled with the chemicals 110 and 120 between the micropattern 100, which is a silicon pattern. Here, the critical aspect ratio may be calculated as a value obtained by dividing the critical height by the width t of the micropattern 100 . In this case, as modeling conditions, the contact angle (θ) between the chemical liquids 110 and 120 and the micropattern 100 is 5 degrees, the modulus of elasticity (E) of the micropattern 110 is 130 GPa, and the chemical liquids 110 and 120 are It was modeled under the condition that the surface tension (γ) was 18.7 mN/m and the temperature was 323K.

[Table 1] and [Table 2] below show simulation results of predicting the critical aspect ratio according to the above conditions. As a result of the simulation, in both the model in which the slope of the sidewall of the micropattern 100 is 90 degrees and the model in which the inclination of the sidewall of the micropattern 100 is an acute angle, when the width t of the micropattern 100 increases, the critical height ( H) increased. In addition, the critical height was predicted to be about 20% higher in the model in which the inclination of the sidewall of the micropattern 100 is an acute angle than in the model in which the inclination of the sidewall of the micropattern 100 is 90 degrees.

In addition, when there is a deviation between the first and second intervals D ₁ and D ₂ of the micropattern 100, the critical aspect ratio does not consider the deviation between the first and second intervals D ₁ and D ₂ . was predicted to decrease.

Referring to [Table 1], in a model in which the slope of the sidewall of the micropattern 100 is 90 degrees, the critical height of the micropattern 100 is the first and second intervals D regardless of the width of the micropattern 100. ₁ , D ₂ ) was predicted to decrease by about 4.7% when the deviation was 3%, and about 6.7% when the deviation between the first and second intervals D ₁ and D ₂ was 5%.

Model Critical aspect ratio at t = 7 nm Critical aspect ratio at t = 10 nm Critical aspect ratio at t=15 nm A model that does not consider the deviation of the first and second intervals 8.0 8.7 9.7 A model considering that the deviation of the first and second intervals is 3% 7.6 8.3 9.2 A model considering that the deviation of the first and second intervals is 5% 7.5 8.1 9.1

Referring to [Table 2], the critical aspect ratio of the micropattern 100 in a model in which the inclination of the sidewall of the micropattern 100 is an acute angle is 3% when the deviation of the first and second intervals D ₁ and D ₂ is 3%. It was predicted to decrease by about 6% in the case of , and about 8% in the case where the deviation of the first and second intervals D ₁ and D ₂ is 5%.

Model Critical aspect ratio at t = 7 nm Critical aspect ratio at t = 10 nm Critical aspect ratio at t=15 nm A model that does not consider the deviation of the first and second intervals 9.6 10.7 12.2 A model considering that the deviation of the first and second intervals is 3% 9.1 10.1 11.5 A model considering that the deviation of the first and second intervals is 5% 8.9 9.9 11.2

That is, in predicting the critical height or critical aspect ratio of the micropattern 100, the first and second intervals D ₁ of the micropattern 100 in the model in which the inclination of the sidewall is more acute than in the model in which the inclination of the sidewall is 90 degrees. , D ₂ ) was predicted to be significantly affected by the deviation.

5 is a block diagram for explaining a simulation device according to some embodiments of the present invention. 5 is an exemplary computing device for performing the simulation method described with reference to FIGS. 1-4.

Referring to FIG. 5 , the simulation device according to some embodiments of the present invention includes an input/output device 210, a display 220, a processor 230, a memory 240, a bus 250, and the like.

Through the bus 250, various components such as the input/output device 210, the display 220, the processor 230, and the memory 240 can be interconnected and communicated (ie control message transfer and data transfer). .

The processor 230 may include one or more of a central processing unit, an application processor, or a communication processor (CP). The processor 230 may, for example, execute calculations or data processing related to control and/or communication of at least one other element of the computing device.

The display 220 may be, for example, a liquid crystal display (LCD), a light emitting diode (LED) display, an organic light emitting diode (OLED) display, a microelectromechanical systems (MEMS) display, or an electronic paper display. can include The display 220 may display various types of content (eg, text, image, video, icon, and/or symbol) to the user. The display 220 may include a touch screen, and may receive, for example, a touch, gesture, proximity, or hovering input using an electronic pen or a part of the user's body.

The memory 240 may include volatile memory (eg, DRAM, SRAM, or SDRAM) and/or non-volatile memory (eg, one time programmable ROM (OTPROM), PROM, EPROM, EEPROM, mask ROM, flash ROM, flash memory, PRAM, RRAM, MRAM, hard drive, or solid state drive (SSD)). The memory 240 may include internal memory and/or external memory. The memory 240 may store, for example, commands or data related to at least one other element of the electronic device. Also, memory 240 may store software and/or programs. Programs may include, for example, kernels, middleware, application programming interfaces (APIs), and/or application programs (or "applications"). At least part of a kernel, middleware, or API may be referred to as an operating system.

The memory 240 stores instructions for performing the simulation method described with reference to FIG. 1 . For example, the memory 240 may have the processor 230 apply a first pressure between first to third micropatterns sequentially arranged to have first and second intervals different from each other and between the first and second micropatterns. A model including a first chemical solution filled to have a pressure and a second chemical solution filled to have a second pressure different from the first pressure between the second and third micropatterns is prepared, and the first to third micropatterns deformed by an external force are formed. Considering the displacement and the deviation of the first spacing between the first and second micropatterns and the second spacing between the second and third micropatterns before deformation, the difference between the first and second pressures and the first to third micropatterns Stores instructions for calculating the heights of the first to third micropatterns in which elastic restoring forces are balanced.

Here, the slopes of sidewalls of the first to third micropatterns may form an acute angle.

Here, after calculating the heights of the first to third micropatterns, the aspect ratios of the first to third micropatterns are calculated by dividing the heights of the first to third micropatterns by the widths of the first to third micropatterns. may further include

In addition, as the modulus of elasticity of the first to third micropatterns increases, the heights of the first to third micropatterns may increase.

In addition, as the surface tension of the first and second liquid chemicals increases, the heights of the first to third micropatterns may decrease.

In addition, when the contact angle of the first chemical between the first and second micropatterns and the contact angle of the second chemical between the second and third micropatterns are 90 degrees, the heights of the first to third micropatterns are maximum. can

Meanwhile, a non-transitory computer readable medium in which a program for sequentially performing simulation methods according to some embodiments of the present invention is stored may be provided. A non-transitory computer-readable medium is not a medium that stores data for a short moment, such as a register, cache, or memory, but a medium that stores data semi-permanently and is readable by a computer. Specifically, the various applications or programs described above may be stored and provided in non-transitory readable media such as CD, DVD, hard disk, Blu-ray disk, USB, memory card, ROM, and the like.

The communication module 210 enables a computing device to communicate with the outside via a network. Here, the network includes both wired and wireless methods. In particular, wireless communication includes, for example, LTE, LTE Advance (LTE-A), code division multiple access (CDMA), wideband CDMA (WCDMA), universal mobile telecommunications system (UMTS), wireless broadband (WiBro), or GSM. (Global System for Mobile Communications). Alternatively, wireless communication may include wireless fidelity (WiFi), light fidelity (LiFi), Bluetooth, Bluetooth Low Energy (BLE), Zigbee, near field communication (NFC), magnetic secure transmission, radio frequency ( RF), or a body area network (BAN). Alternatively, wireless communication may include GNSS. The GNSS may be, for example, a Global Positioning System (GPS), a Global Navigation Satellite System (Glonass), a Beidou Navigation Satellite System (hereinafter “Beidou”) or Galileo, the European global satellite-based navigation system. Wired communications include, for example, USB (universal serial bus), HDMI (high definition multimedia interface), RS-232 (recommended standard 232), power line communications, or POTS (plain old telephone service), computer networks such as LAN or WAN) and the like.

Although the embodiments of the present invention have been described with reference to the above and accompanying drawings, those skilled in the art to which the present invention pertains can implement the present invention in other specific forms without changing the technical spirit or essential features. You will understand that there is Therefore, the embodiments described above should be understood as illustrative in all respects and not limiting.

100: fine pattern 101: first fine pattern
102: second fine pattern 103: third fine pattern
110: first chemical solution 120: second chemical solution
130: support member 210: communication module
220: display 230: processor
240: memory 250: bus

Claims (13)

In the simulation method performed by a computing device,
First to third micropatterns sequentially arranged to have first and second distances different from each other, and a first chemical liquid filled to have a first pressure between the first and second micropatterns and the second and third micropatterns preparing a model including a second chemical solution filled between patterns to have a second pressure different from the first pressure; and
Displacement of the first to third micropatterns deformed by an external force, and deviation of a first distance between the first and second micropatterns before deformation and a second distance between the second and third micropatterns and calculating heights of the first to third micropatterns at which the difference between the first and second pressures and the elastic restoring force of the first to third micropatterns are balanced. According to claim 1,
The simulation method of claim 1 , wherein slopes of sidewalls of the first to third micropatterns form an acute angle. According to claim 1,
After calculating the heights of the first to third micropatterns,
The simulation method further comprises calculating an aspect ratio of the first to third micropatterns by dividing a height of the first to third micropatterns by a width of the first to third micropatterns. According to claim 1,
The simulation method, wherein the heights of the first to third micropatterns increase as the moduli of elasticity of the first to third micropatterns increase. According to claim 1,
The simulation method, wherein the heights of the first to third micropatterns decrease as the surface tensions of the first and second liquid chemicals increase. According to claim 1,
When the contact angle of the first chemical between the first and second micropatterns and the contact angle of the second chemical between the second and third micropatterns are 90, respectively, the heights of the first to third micropatterns A simulation method in which is maximal. According to claim 1,
Wherein the first to third micropatterns include Si. According to claim 1,
The first and second chemical liquids are IPA (Isopropyl Alcohol) or DIW (DeIonized Water), simulation method. In the simulation method performed by a computing device,
First to third micropatterns sequentially arranged to have first and second distances different from each other, and a first chemical liquid filled to have a first pressure between the first and second micropatterns and the second and third micropatterns Preparing a model including a second chemical liquid filled to have a second pressure different from the first pressure between the patterns;
A function of the displacement of the first to third micropatterns by an external force by the following Equations (1), (2) and (3)

Calculate critical heights of the first to third micropatterns that satisfy
Calculating the critical heights of the first to third micropatterns includes considering deviations in the spacing between the first and second micropatterns adjacent to each other and the spacing between the second and third micropatterns adjacent to each other. , simulation method.
Equation (1)

Equation (2)

Equation (3)

(Where, P1: first pressure, P2: second pressure, F1: elastic restoring force of the first to third micropatterns, δ: displacement by external force of the first to third micropatterns, D1: first and second micropatterns spacing of micropatterns, D2: spacing of second and third micropatterns, γ: surface tension of chemical solution, α: inclination of sidewalls of first to third micropatterns,

θ: contact angle of the first and second chemical solutions, E: elastic modulus of the first to third micropatterns, t: width of the first to third micropatterns, H: critical height of the first to third micropatterns) According to claim 9,
The simulation method, wherein a critical height of the first to third micropatterns increases as the modulus of elasticity of the first to third micropatterns increases. According to claim 9,
The simulation method, wherein the critical heights of the first to third micropatterns decrease as the surface tensions of the first and second liquid chemicals increase. According to claim 9,
When the contact angles of the first and second liquid chemicals are 90 degrees, the critical heights of the first to third micropatterns are maximum, the simulation method. processor; and
comprising a memory, wherein the memory
the processor
First to third micropatterns sequentially arranged to have first and second distances different from each other, and a first chemical liquid filled to have a first pressure between the first and second micropatterns and the second and third micropatterns Preparing a model including a second chemical liquid filled to have a second pressure different from the first pressure between the patterns;
Considering the displacement of the first to third micropatterns deformed by an external force and the deviation of the first spacing between the first and second micropatterns and the second spacing between the second and third micropatterns before the deformation The simulation device for storing instructions for calculating heights of the first to third micropatterns at which the difference between the first and second pressures and the elastic restoring force of the first to third micropatterns are balanced.

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