KR20230030379A - Silicon-photonics-based optical modulator - Google Patents

Abstract

Disclosed is a silicon photonics-based optical modulator, which comprises: first RF metal electrodes operated as ground; phase shifters disposed between the first RF metal electrodes to optically modulate an optical signal transmitted along an optical waveguide; second RF metal electrodes disposed between the phase shifters to provide each of the phase shifters with an RF electrical signal received from a driving driver located outside the optical modulator through one end; terminating resistors connected to the other end of the second RF metal electrodes; an inductive line disposed between the terminating resistors and a supply power source (Vcc) to apply a bias voltage to the optical modulator and the driving driver; and a silicon capacitor disposed between the terminating resistors and the supply power source to prevent deterioration in RF frequency response characteristics of a silicon photonics-based optical modulator due to the inductive line. Therefore, the overall RF frequency response characteristics of the optical modulator cannot be impaired.

Description

Silicon photonics based light modulator {SILICON-PHOTONICS-BASED OPTICAL MODULATOR}

The present invention relates to a silicon photonics-based light modulator, and more particularly, to a structure that does not impair RF frequency response characteristics while supplying a bias voltage to metal electrodes constituting the light modulator.

Silicon photonics technology is a technology for integrating photonic devices into a single chip through a commercial CMOS (Complementary Metal-Oxide-Semiconductor) semiconductor process. Such silicon photonics technology enables low cost through mass production of optical communication devices, miniaturization through 2D or 3D integration, and high capacity through repeated arrangement of devices. In particular, silicon photonics-based light modulators are being considered as key functional devices to cope with data center traffic and telecom traffic that are recently increasing exponentially.

For example, the silicon photonics-based light modulator may include a first RF metal electrode connection part connected to a driving driver supplying an RF electrical signal and a second RF metal electrode connection part to which a DC supply voltage is supplied. An output of the driving driver may be input to an input edge of the first RF metal electrode connection part of the optical modulator to modulate an optical signal transmitted through silicon optical waveguides while propagating through the RF metal electrodes.

In this case, the second RF metal electrode connection part located near the end edge of the RF metal electrodes may be connected to a terminating resistor RL. And, these terminating resistors can be connected to the DC supply power (Vcc), through which the driving driver of the silicon photonics-based light modulator can be operated.

In addition, the third RF metal electrode connection part disposed at an arbitrary position of the RF metal electrodes can directly connect the DC supply power without a termination resistor (RL), through which a desired bias voltage for the phase shift of the silicon-based light modulator can be obtained. can be authorized.

Such a DC supply power is essential for the operation of silicon photonics-based light modulators and driving drivers, but has a serious problem of deteriorating overall RF frequency response characteristics of the light modulator because it is connected to RF-designed RF metal electrodes.

The present invention provides a bias voltage to the RF metal electrode by disposing a silicon capacitor between a terminating resistor or an RF metal electrode (in the case of direct connection without a terminating resistor) constituting a silicon photonics-based optical modulator and a supply power source located outside the optical modulator. However, we propose a structure that does not impair the overall RF frequency response characteristics of the light modulator.

An optical modulator based on silicon photonics according to an embodiment of the present invention includes first RF metal electrodes operating as ground; phase shifters disposed between the first RF metal electrodes to optically modulate an optical signal transmitted along an optical waveguide; second RF metal electrodes disposed between the phase shifters and providing an RF electrical signal received from a driving driver located outside the optical modulator through one end to each of the phase shifters; termination resistors connected to the other ends of the second RF metal electrodes; an inductive line disposed between the terminating resistor and a power supply (Vcc) to apply a bias voltage to the optical modulator and the driving driver; and a silicon capacitor disposed in parallel between the terminating resistor and a power supply to prevent deterioration of RF frequency response characteristics of the silicon photonics-based light modulator due to the inductive line. At this time, the silicon capacitor may be connected to the ground.

The silicon capacitor may be disposed in a trench region formed on a substrate constituting the optical modulator, and a size of the trench region may be determined based on a size of the silicon capacitor.

The depth of the trench region may be determined such that heights of RF metal electrodes formed on the substrate constituting the optical modulator match a height of a pad of the silicon capacitor.

The silicon capacitor may be separately manufactured and connected to a substrate constituting the optical modulator through wire bonding or bump bonding.

The silicon capacitor may be disposed on a separate submount substrate and then connected to a substrate constituting the optical modulator.

The silicon capacitor may be integrated into a single chip through the same CMOS semiconductor process as the silicon photonics-based light modulator.

When the first RF metal electrodes do not operate as a ground and a separate bias voltage is applied to each of the phase shifters, one end of the first RF metal electrodes and the bias power supplies (Vb1, Vb2) Disposed between additional inductive lines; and a silicon capacitor disposed between the first RF metal electrodes and bias power supplies to prevent deterioration of RF frequency response characteristics of the silicon photonics-based optical modulator due to the additional inductive lines.

An optical modulator based on silicon photonics according to an embodiment of the present invention includes RF metal electrodes for receiving an RF electrical signal from a driving driver located outside the optical modulator; phase shifters disposed between the RF metal electrodes to optically modulate an optical signal transmitted along an optical waveguide; a bias metal electrode disposed between the phase shifters and receiving a first bias voltage from a bias power supply (Vbias) located outside the optical modulator through one end; termination resistors connected to the other ends of the RF metal electrodes; an inductive line disposed between the terminating resistor and a power supply (Vcc) to apply a second bias voltage to the optical modulator and the driving driver; and a silicon capacitor disposed between the terminating resistor and the power supply to prevent deterioration of RF frequency response characteristics of the silicon photonics-based light modulator due to the inductive line.

The silicon capacitor may be disposed in a trench region formed on a substrate constituting the optical modulator, and a size of the trench region may be determined based on a size of the silicon capacitor.

The depth of the trench region may be determined such that heights of metal electrodes formed on the substrate constituting the optical modulator match a height of a pad of the silicon capacitor.

The silicon capacitor may be separately manufactured and connected to a substrate constituting the optical modulator through wire bonding or bump bonding.

The silicon capacitor may be disposed on a separate submount substrate and then connected to a substrate constituting the optical modulator.

The silicon capacitor may be integrated into a single chip through the same CMOS semiconductor process as the silicon photonics-based light modulator.

The phase shifters may be serially connected to each other through the bias metal electrode to operate in a series-push-pull structure.

An optical modulator based on silicon photonics according to an embodiment of the present invention includes RF metal electrodes for receiving an RF electrical signal from a driving driver located outside the optical modulator; phase shifters disposed between the RF metal electrodes to optically modulate an optical signal transmitted along an optical waveguide; a bias metal electrode disposed between the phase shifters and receiving a bias voltage from a bias power supply (Vbias) located outside the optical modulator through one end; terminating resistors connecting the other ends of the RF metal electrodes to each other; and a silicon capacitor disposed at front ends of the RF metal electrodes to AC-couple an RF electrical signal received from the driving driver.

The silicon capacitor may be disposed in a trench region formed on a substrate constituting the optical modulator, and a size of the trench region may be determined based on a size of the silicon capacitor.

The depth of the trench region may be determined such that heights of metal electrodes formed on the substrate constituting the optical modulator match a height of a pad of the silicon capacitor.

The silicon capacitor may be separately manufactured and connected to a substrate constituting the optical modulator through wire bonding or bump bonding.

The silicon capacitor may be disposed on a separate submount substrate and then connected to a substrate constituting the optical modulator.

The silicon capacitor may be integrated into a single chip through the same CMOS semiconductor process as the silicon photonics-based light modulator.

The phase shifters may be serially connected to each other through the bias metal electrode to operate in a series-push-pull structure.

The present invention provides a bias voltage to the RF metal electrode by disposing a silicon capacitor between a terminating resistor or an RF metal electrode (in the case of direct connection without a terminating resistor) constituting a silicon photonics-based optical modulator and a supply power source located outside the optical modulator. However, overall RF frequency response characteristics of the light modulator may not be impaired.

1 is a diagram illustrating a silicon photonics-based light modulator according to a first embodiment of the present invention.
2 is a diagram showing simulation results of scattering coefficients of a silicon photonics-based light modulator according to an embodiment of the present invention.
3 is a diagram showing an example of a structure in which a small capacitor is disposed in a silicon photonics-based light modulator according to an embodiment of the present invention.
4 is a diagram illustrating a silicon photonics-based light modulator according to a second embodiment of the present invention.
5 is a diagram illustrating a silicon photonics-based light modulator according to a third embodiment of the present invention.
6 is a diagram illustrating a silicon photonics-based light modulator according to a fourth embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a diagram illustrating a silicon photonics-based light modulator according to a first embodiment of the present invention.

Referring to FIG. 1 , in the silicon photonics-based optical modulator 100 of the present invention, an optical signal input to an optical waveguide 101 may be separated into different optical waveguides 103 and 104 through an optical splitter 102. At this time, in the silicon photonics-based optical modulator 100, a phase shifter 1 106 and a phase shifter 2 107 may be disposed along the optical waveguides 103 and 104. The shifter 2 (107) may be composed of a plurality of PN diodes connected in parallel.

In addition, an RF metal electrode 108 operating as a ground with the phase shifter 1 106 interposed therebetween and an RF metal electrode providing an RF electric signal received from the driving driver 200 to the phase shifter 1 106 ( 109) may be disposed, and the RF electric signal received from the RF metal electrode 110 and the driving driver 200 operating as a ground with the phase shifter 2 (107) interposed therebetween is transmitted to the phase shifter 2 (107). An RF metal electrode 111 provided may be disposed.

Among the outputs of the driving driver 200, a “Signal” RF electrical signal and an “Inverse Signal” RF electrical signal may be input near left edges of the RF metal electrode 109 and the RF metal electrode 111, respectively. At this time, the propagation speed of the RF electrical signal propagating through the RF metal electrodes 109 and 111 and the optical signal propagating through the optical waveguides 103 and 104 can be matched, which is known as a traveling wave modulator technology. there is.

A terminating resistor 112 and a terminating resistor 113 may be connected near right edges of the RF metal electrode 109 and the RF metal electrode 111, respectively, and each optical signal propagated along the optical waveguides 103 and 104 After being modulated by the phase shifter 1 (106) and the phase shifter 2 (107), may be optically coupled through the optical combiner (105).

)(130)이 연결될 수 있다. 이때, RF 메탈 전극(108, 109, 110, 111)은 RF 설계가 되어있지만 종단저항(112, 113)과 공급 전원(130)사이에 배치되는 인덕티브 라인(Inductive Line)(114)은 RF 설계가 어려울 수 있다.Supply power for providing DC voltage to the rear ends of the termination resistors 112 and 113 for the operation of the silicon photonics-based optical modulator 100 and the driving driver 200 located outside the optical modulator 100 (

) 130 may be connected. At this time, the RF metal electrodes 108, 109, 110, and 111 are designed for RF, but the inductive line 114 disposed between the terminating resistors 112 and 113 and the power supply 130 is designed for RF. can be difficult

The inductive line 114 includes ① a metal line formed on the light modulator chip in which the silicon photonics-based light modulator 100 is implemented, and ② a metal interface between the light modulator chip and an external printed circuit board (PCB) (eg, wire bonds, solder bumps, etc.), and ③ metal lines formed on an external PCB. Here, the external PCB is just one example and may be a separate submount board or semiconductor chip that plays the same role.

Due to the inductance of the inductive line 114, the RF frequency response characteristic of the silicon photonics-based optical modulator 100 is deteriorated. In the case of a wirebond metal line that is commonly used, it is found to have an inductance of 0.5-1.0 nH/mm. It is known.

In the present invention, in order to solve this problem, a small capacitor 115 may be disposed between the terminating resistor 112 or 113 of the silicon photonics-based light modulator 100 and the power supply 130. In this case, the small capacitor is ① implemented on the light modulator chip in which the silicon photonics-based light modulator 100 is implemented, ② manufactured separately from the light modulator chip and connected through a wire bond or solder bump, or ③ a separate capacitor containing a capacitor. The submount substrate of the semiconductor chip may be connected.

Through this structure, even if the inductive line 114 exists between the silicon photonics-based optical modulator 100 and the power supply 130, the optical modulator ( 100) and a DC-type supply voltage necessary for the operation of the driving driver 200.

2 is a diagram showing simulation results of scattering coefficients of a silicon photonics-based light modulator according to an embodiment of the present invention.

Figure 2 (a) is the S11 simulation result of the silicon photonics-based light modulator 100 according to the inductance value of the inductive line 114, Figure 2 (b) is according to the inductance value of the inductive line 114 This is the S21 simulation result of the silicon photonics-based light modulator 100. Referring to FIG. 2 , it can be seen that as the inductance value of the inductive line 114 increases from 0nH to 0.5nH to 1nH, the RF electrical signal reflection characteristic deteriorates.

Normally, S11 < -10dB or less. In addition, as the inductance increases, the attenuation characteristics of the RF electrical signal deteriorate. In the case of 0nH at 30GHz frequency (part marked m1), it has a loss value of -6.2dB, but in the case of 0.5nH, -8.3dB, and in the case of 1nH, -12.1dB. It can be seen that the loss of That is, as the power supply 130 is connected to the silicon photonics-based optical modulator 100 through the inductive line 114, a serious problem is that overall frequency characteristics are deteriorated.

To solve this problem, a small capacitor 115 may be disposed between the terminating resistor 112 or 113 of the silicon photonics-based light modulator 100 and the power supply 130 . Referring to (a) and (b) of FIG. 2 , when the silicon photonics-based light modulator 100 includes the small capacitor 115 (bold-line), 0nH (narrow-line) when there is no inductive line ) It can be seen that it has the same S11 and S21 frequency response characteristics.

3 is a diagram illustrating a silicon photonics-based light modulator according to a second embodiment of the present invention.

Referring to FIG. 3 , a structure in which a small capacitor 115 is connected between the terminating resistors 112 and 113 of the silicon photonics-based optical modulator 100 and the power supply 130, as well as the silicon photonics-based optical modulator 100 Another bias voltage required for the operation of may have a structure in which the RF metal electrodes 108 and 110 are applied.

)(131)과 바이어스 전원(

)(132)이 각각 연결되어 RF 메탈 전극(108 또는 110)에 DC 전압을 인가할 수 있다.In the silicon photonics-based optical modulator 100, specific bias voltages must be applied to and adjusted to phase shifter 1 106 and phase shifter 2 107 for optimal modulation performance. As shown in FIG. 3, the bias power supply to the RF metal electrode 108 and the RF metal electrode 110 (

) 131 and the bias power supply (

) 132 may be connected to apply a DC voltage to the RF metal electrode 108 or 110.

으로 나타낼 수 있고, 위상 천이기2(107)의 PN 다이오드 양단에 걸리는 전압은

으로 나타낼 수 있다. 여기서

은 광변조기(100)의 종단저항 값을 나타내고,

과

는 각각 바이어스 전원(131) 및 바이어스 전원(132)의 출력 전압 값을 나타내며,

과

는 광변조기(100)를 구성하는 RF 메탈 전극(108) 및 RF 메탈 전극(110)을 흐르는 DC 전류 값을 나타낸다.The voltage across the PN diode of phase shifter 1 (106) is

, and the voltage across the PN diode of phase shifter 2 (107) is

can be expressed as here

represents the terminating resistance value of the light modulator 100,

class

Represents the output voltage values of the bias power supply 131 and the bias power supply 132, respectively,

class

represents a DC current value flowing through the RF metal electrode 108 and the RF metal electrode 110 constituting the light modulator 100 .

관계를 만족할 수 있다. 참고로 도 1과 같이 RF 메탈 전극(108)과 RF 메탈 전극(110)이 그라운드(GND)와 연결되어 있으면 위상 천이기1(106) 및 위상 천이기2(107)에는

DC 전압이 인가될 수 있다.Normally, phase shifter 1 (106) and phase shifter 2 (107) receive reverse voltage, so

relationship can be satisfied. For reference, as shown in FIG. 1, if the RF metal electrode 108 and the RF metal electrode 110 are connected to the ground (GND), the phase shifter 1 (106) and the phase shifter 2 (107)

A DC voltage may be applied.

The RF metal electrode 108 and the RF metal electrode 110 of the silicon photonics-based optical modulator 100 are connected to the bias power supply 131 and the bias power supply 132 through the inductive line 116 and the inductive line 118, respectively. can be connected with At this time, since the inductive lines 116 and 118 are metal lines, as shown in FIG. 1 , RF frequency response characteristics of the silicon photonics-based optical modulator 100 may be impaired.

In order to solve this problem, the present invention inserts a small capacitor 117 between the RF metal electrode 108 and the bias power supply 131, and inserts a small capacitor 119 between the RF metal electrode 110 and the bias power supply 132. ), it is possible to prevent deterioration of the RF frequency response characteristics of the silicon photonics-based light modulator 100.

4 is a diagram showing an example of a structure in which a small capacitor is disposed in a silicon photonics-based optical modulator according to a second embodiment of the present invention.

In the present invention, a small capacitor connected to the silicon photonics-based light modulator 100 may be a separately manufactured silicon capacitor 117 or 119 as shown in FIG. 4 . Here, the number of silicon capacitors 117 or 119 is not limited to two and may be singular or one or more. The silicon capacitor 117 or 119 may have a large capacitance while being very small in size. In the present invention, the silicon capacitor 117 or 119 is described as one embodiment, and various types of small capacitors that are compact and can be implemented or connected to a silicon photonics chip can be used.

Referring to FIG. 4 , the silicon photonics-based optical modulator 100 of the present invention is formed on a silicon substrate constituting the optical modulator 100 to match the length x width x height of a silicon capacitor 117 or 119 through a trench process. The difficulty of chip-to-chip packaging can be reduced by forming the capacitor mounting unit 120 or 121 .

On the other hand, since the present invention is a technology for eliminating the effect of inductance between the silicon photonics-based light modulator 100 and the power supply 130, the electrical connection between the silicon photonics-based light modulator 100 and the silicon capacitor 117 or 119 length should be minimized.

To this end, the heights of the pads of the RF metal electrodes 108 and 110 constituting the silicon photonics-based optical modulator 100 and the ground (GND) pad are matched with the height of the pad of the silicon capacitor 117 or 119, so that for connection The length of the additional electrical connection line can be minimized.

The silicon capacitors 117 or 119 may have a structure that is manufactured and connected separately as described above, or the silicon photonics-based light modulator 100 and the silicon capacitors 117 or 119 may be manufactured at once through a CMOS semiconductor process. may be

5 is a diagram illustrating a silicon photonics-based light modulator according to a third embodiment of the present invention.

Referring to FIG. 5 , the silicon photonics-based light modulator 100 can be operated in a series-push-pull structure in which a phase shifter 1 106 and a phase shifter 2 107 are serially connected to each other. . An RF electrical signal is input from the drive driver 200 to the silicon photonics-based light modulator 100, and a power supply 130 is supplied to the rear end of the terminating resistor 112 or 113 for the operation of the light modulator 100 and the drive driver 200. ) is connected.

At this time, even if the inductive line 114 in the form of a metal line exists between the silicon photonics-based light modulator 100 and the power supply 130, the light modulator 100 It is possible to supply a DC voltage required for the operation of the optical modulator 100 and the driving driver 200 without impairing the RF frequency response characteristics of the ).

In this case, in the optical modulator 100 operating in a series push-pull structure, a DC voltage may be applied to the bias metal electrode 140 through the inductive line 141 connected to the bias power source V _BIAS 142 . Here, since the bias metal electrode 140 is independent of the RF metal electrode 108 or 110, even if it is “inductive” or “resistive,” the overall RF frequency response characteristics of the optical modulator 100 may not be affected.

6 is a diagram illustrating a silicon photonics-based light modulator according to a fourth embodiment of the present invention.

Referring to FIG. 6 , in the silicon photonics-based light modulator 100, a small capacitor 122 or 123 for receiving an AC-coupled RF electrical signal may be disposed at an input terminal of an RF metal electrode 108 or 110, respectively. .

In the embodiments of FIGS. 1 to 5, in order to eliminate the influence of the terminal resistors 112 and 113 of the silicon photonics-based light modulator 100 and the inductance metal line of the power supply 130, a small capacitor 115 is connected to the ground. connected.

However, in the embodiment of FIG. 6 , a small coffee sitter 122 or 123 may be disposed at the input terminal of the RF metal electrode 108 or 110, respectively, in order to AC-couple the input terminal of the RF metal electrode 108 or 110.

Since a very short RF interface is required between the driving driver 200 and the silicon photonics-based optical modulator 100, AC coupling can be performed while minimizing RF loss by using the small capacitor 122 or 123 proposed in the present invention. there is.

When the silicon photonics-based light modulator 100 operates in a serial push-pull structure as shown in FIG. 6 , the light modulator 100 uses a bias metal electrode through an inductive line 141 connected to a bias power supply (V _BIAS ) 142. A DC voltage may be applied to 140 . Here, since the bias metal electrode 140 is independent of the RF metal electrode 108 or 110, even if it is “inductive” or “resistive,” the overall RF frequency response characteristics of the optical modulator 100 may not be affected.

Meanwhile, in the silicon photonics-based light modulator 100 provided in FIG. 6, the RF metal electrodes 108 and 110 may be connected to each other through a termination resistor 112, and impedance matching with the characteristic impedance of the light modulator 100 through this. this can be done

Unlike the other examples, the example of FIG. 6 has a structure in which DC power is not supplied to the terminal, so the driver used in the structure may be a type that can operate without supplying DC power at the light modulator stage.

Meanwhile, the method according to the present invention is written as a program that can be executed on a computer and can be implemented in various recording media such as magnetic storage media, optical reading media, and digital storage media.

Implementations of the various techniques described herein may be implemented in digital electronic circuitry, or in computer hardware, firmware, software, or combinations thereof. Implementations may be a computer program product, i.e., an information carrier, e.g., a machine-readable storage, for processing by, or for controlling, the operation of a data processing apparatus, e.g., a programmable processor, computer, or plurality of computers. It can be implemented as a computer program tangibly embodied in a device (computer readable medium) or a radio signal. A computer program, such as the computer program(s) described above, may be written in any form of programming language, including compiled or interpreted languages, and may be written as a stand-alone program or in a module, component, subroutine, or computing environment. It can be deployed in any form, including as other units suitable for the use of. A computer program can be deployed to be processed on one computer or multiple computers at one site or distributed across multiple sites and interconnected by a communication network.

Processors suitable for processing a computer program include, by way of example, both general and special purpose microprocessors, and any one or more processors of any kind of digital computer. Generally, a processor will receive instructions and data from read only memory or random access memory or both. Elements of a computer may include at least one processor that executes instructions and one or more memory devices that store instructions and data. In general, a computer may include, receive data from, send data to, or both, one or more mass storage devices that store data, such as magnetic, magneto-optical disks, or optical disks. It can also be combined to become. Information carriers suitable for embodying computer program instructions and data include, for example, semiconductor memory devices, for example, magnetic media such as hard disks, floppy disks and magnetic tapes, compact disk read only memory (CD-ROM) ), optical media such as DVD (Digital Video Disk), magneto-optical media such as Floptical Disk, ROM (Read Only Memory), RAM (RAM) , Random Access Memory), flash memory, EPROM (Erasable Programmable ROM), EEPROM (Electrically Erasable Programmable ROM), and the like. The processor and memory may be supplemented by, or included in, special purpose logic circuitry.

In addition, computer readable media may be any available media that can be accessed by a computer, and may include both computer storage media and transmission media.

Although this specification contains many specific implementation details, they should not be construed as limiting on the scope of any invention or what is claimed, but rather as a description of features that may be unique to a particular embodiment of a particular invention. It should be understood. Certain features that are described in this specification in the context of separate embodiments may also be implemented in combination in a single embodiment. Conversely, various features that are described in the context of a single embodiment can also be implemented in multiple embodiments individually or in any suitable subcombination. Further, while features may operate in particular combinations and are initially depicted as such claimed, one or more features from a claimed combination may in some cases be excluded from that combination, and the claimed combination is a subcombination. or sub-combination variations.

Similarly, while actions are depicted in the drawings in a particular order, it should not be construed as requiring that those actions be performed in the specific order shown or in the sequential order, or that all depicted actions must be performed to obtain desired results. In certain cases, multitasking and parallel processing can be advantageous. Further, the separation of various device components in the embodiments described above should not be understood as requiring such separation in all embodiments, and the program components and devices described may generally be integrated together into a single software product or packaged into multiple software products. You have to understand that you can.

On the other hand, the embodiments of the present invention disclosed in this specification and drawings are only presented as specific examples to aid understanding, and are not intended to limit the scope of the present invention. In addition to the embodiments disclosed herein, it is obvious to those skilled in the art that other modified examples based on the technical idea of the present invention can be implemented.

100: silicon photonics based light modulator
101, 103, 104: optical waveguide
102: optical splitter
105: optical coupler
106: phase transition 1
107: phase transition 2
108, 109, 110, 111: RF metal electrode
112, 113: termination resistance
114: inductive line
115: small capacitor
130: supply power
200: drive driver

Claims (19)

In the silicon photonics-based optical modulator,
first RF metal electrodes operating as a ground;
phase shifters disposed between the first RF metal electrodes to optically modulate an optical signal transmitted along an optical waveguide;
second RF metal electrodes disposed between the phase shifters and providing an RF electric signal received from a driving driver located outside the optical modulator through one end to each of the phase shifters;
termination resistors connected to the other ends of the second RF metal electrodes;
an inductive line disposed between the terminating resistor and a power supply (Vcc) to apply a bias voltage to the optical modulator and the driving driver; and
A silicon capacitor disposed between the terminating resistor and the power supply to prevent deterioration of RF frequency response characteristics of the silicon photonics-based optical modulator due to the inductive line.
An optical modulator comprising a. According to claim 1,
The silicon capacitor,
disposed in a trench region formed on a substrate constituting the light modulator;
The size of the trench region is
An optical modulator determined based on the size of the silicon capacitor. According to claim 2,
The trench region,
The optical modulator having a depth determined such that a height of RF metal electrodes formed on a substrate constituting the optical modulator matches a height of a pad of the silicon capacitor. According to claim 1,
The silicon capacitor,
An optical modulator manufactured separately and connected to a substrate constituting the optical modulator through wire bonding or bump bonding. According to claim 1,
The silicon capacitor,
An optical modulator disposed on a separate submount substrate and then connected to a substrate constituting the optical modulator. According to claim 1,
The silicon capacitor,
A light modulator integrated into a single chip through the same CMOS semiconductor process as the silicon photonics-based light modulator. According to claim 1,
When the first RF metal electrodes do not operate as a ground and a separate bias voltage is applied to each of the phase shifters, one end of the first RF metal electrodes and the bias power supplies (Vb1, Vb2) Disposed between additional inductive lines; and
A silicon capacitor disposed between the first RF metal electrodes and bias power supplies to prevent deterioration of RF frequency response characteristics of the silicon photonics-based optical modulator due to the additional inductive lines.
An optical modulator further comprising a. In the silicon photonics-based optical modulator,
RF metal electrodes receiving RF electrical signals from a driving driver located outside the light modulator;
phase shifters disposed between the RF metal electrodes to optically modulate an optical signal transmitted along an optical waveguide;
a bias metal electrode disposed between the phase shifters and receiving a first bias voltage from a bias power supply (Vbias) located outside the optical modulator through one end;
termination resistors connected to the other ends of the RF metal electrodes;
an inductive line disposed between the terminating resistor and a power supply (Vcc) to apply a second bias voltage to the optical modulator and the driving driver; and
A silicon capacitor disposed between the terminating resistor and the power supply to prevent deterioration of RF frequency response characteristics of the silicon photonics-based optical modulator due to the inductive line.
An optical modulator comprising a. According to claim 8,
The silicon capacitor,
disposed in a trench region formed on a substrate constituting the light modulator;
The size of the trench region is
An optical modulator determined based on the size of the silicon capacitor. According to claim 9,
The trench region,
The light modulator having a depth determined such that a height of metal electrodes formed on a substrate constituting the light modulator and a height of a pad of the silicon capacitor match. According to claim 8,
The silicon capacitor,
An optical modulator manufactured separately and connected to a substrate constituting the optical modulator through wire bonding or bump bonding. According to claim 8,
The silicon capacitor,
An optical modulator disposed on a separate submount substrate and then connected to a substrate constituting the optical modulator. According to claim 8,
The phase shifters,
An optical modulator operating in a series-push-pull structure by being serially connected to each other through the bias metal electrode. In the silicon photonics-based optical modulator,
RF metal electrodes receiving RF electrical signals from a driving driver located outside the light modulator;
phase shifters disposed between the RF metal electrodes to optically modulate an optical signal transmitted along an optical waveguide;
a bias metal electrode disposed between the phase shifters and receiving a bias voltage from a bias power supply (Vbias) located outside the optical modulator through one end;
terminating resistors connecting the other ends of the RF metal electrodes to each other; and
A silicon capacitor disposed in front of the RF metal electrodes to AC-couple the RF electrical signal received from the driving driver
An optical modulator comprising a. According to claim 14,
The silicon cone capacitor,
disposed in a trench region formed on a substrate constituting the light modulator;
The size of the trench region is
An optical modulator determined based on the size of the silicon capacitor. According to claim 15,
The trench region,
The light modulator having a depth determined such that a height of metal electrodes formed on a substrate constituting the light modulator and a height of a pad of the silicon capacitor match. According to claim 14,
The silicon capacitor,
An optical modulator manufactured separately and connected to a substrate constituting the optical modulator through wire bonding or bump bonding. According to claim 14,
The silicon capacitor,
An optical modulator disposed on a separate submount substrate and then connected to a substrate constituting the optical modulator. According to claim 14,
The phase shifters,
An optical modulator operating in a series-push-pull structure by being serially connected to each other through the bias metal electrode.

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