KR20230021029A - display device - Google Patents

Abstract

The display device includes a substrate; A display panel including a display unit formed on a front surface of a substrate and a flexible substrate unit extending from the display unit and covering a side surface of the substrate and a part of the rear surface of the substrate; A pair of curved surfaces disposed between the side surface of the substrate and the flexible substrate portion and including a support layer supporting the flexible substrate portion, and the flexible substrate portion is spaced apart from the support layer; It may include a side cover connecting a pair of curved surfaces and contacting the support layer.

Description

display device

The present invention relates to a display device.

Recently, display devices having excellent characteristics such as thinness and flexibility have been developed in the field of display technology.

Conventional displays are represented by liquid crystal displays (LCDs) and active matrix organic light emitting diodes (AMOLEDs).

However, in the case of LCD, there are problems of not fast response time and implementation of flexibility, and in the case of AMOLED, short lifespan and poor mass production yield exist.

On the other hand, Light Emitting Diode (LED) is a well-known semiconductor light emitting device that converts current into light. Starting with the commercialization of red LEDs using GaAsP compound semiconductors in 1962, information has been growing along with GaP:N series green LEDs. It has been used as a light source for display images in electronic devices including communication devices. A method for solving the above problem by implementing a display using the semiconductor light emitting device may be proposed. These light emitting diodes have various advantages over filament-based light emitting devices, such as long lifespan, low power consumption, excellent initial drive characteristics, and high vibration resistance.

As an example of a display, Korean Patent Registration Publication No. 10-1895217 (published on September 7, 2018) discloses a tiling multi-display. The tiling multi-display includes a pixel area in which pixels are formed, and a bezel formed at the edge of the pixel area. A flexible panel comprising an area; and a support substrate to which the flexible panel is bonded, wherein a pixel area of the flexible panel is bonded to an upper surface, and a bezel area of the flexible panel is folded and bonded to side surfaces and lower surfaces connected to the upper surface. , the radius of curvature (r) of the folded portion of the flexible panel is less than 1/2 of the length (S) between pixels.

Another example of the display is a flexible display device disclosed in Patent Publication No. 10-2017-0071047 A (published on June 23, 2017), the flexible display device includes a display area and a non-display area, and within the non-display area a substrate having a bending area; a link wire provided in a non-display area on the substrate; and a bending connection wire provided in a bending area on the substrate and connected to the wire through a contact hole, wherein the bending connection wire is positioned on a neutral plane to reduce the size of a bezel and improve aesthetics.

Display devices according to the prior art have problems in that when wire electrodes such as bending connection wires are excessively bent, the wire electrodes are damaged, resulting in increased resistance and disconnection.

In the display device according to the related art, when the wire electrode is gently bent to prevent disconnection of the wire electrode, the non-display area is increased and the size of the bezel is enlarged.

An object of the present invention is to provide a highly reliable display device by minimizing a sharply bent portion and disconnection among wire electrodes.

Another object of the present invention is to provide a display device with a minimized bezel with a simple structure.

The display device according to the present embodiment includes a substrate; A display panel including a display unit formed on a front surface of a substrate and a flexible substrate unit extending from the display unit and covering a side surface of the substrate and a part of the rear surface of the substrate; A support layer disposed between the side surface of the substrate and the flexible substrate portion to support the flexible substrate portion may be included.

A pair of curved surfaces that are spaced apart from the flexible base unit support layer; And it may include a side cover that connects the pair of curved surfaces and contacts the support layer.

The display panel includes a flexible substrate in contact with the substrate; a wiring electrode formed on a flexible substrate; A plurality of semiconductor light emitting elements formed on the wiring electrodes and a protective layer covering the wiring electrodes and the plurality of semiconductor light emitting elements may be included.

The side cover portion may be spaced apart from the side surface and may be parallel to the side surface.

The radius of curvature of the curved portion may be less than half of the thickness of the substrate.

The length of the support layer may be shorter than the limiting length of twice the radius of curvature of the curved portion in the thickness of the substrate.

The support layer may be coated on the flexible substrate.

The display device may further include an adhesive coated on the support layer and the flexible substrate and attached to the side surface of the substrate.

The support layer includes a first surface facing the side of the substrate and a second surface facing the flexible substrate, and the area of the second surface may be greater than that of the first surface.

The side of the substrate may be orthogonal to the front side of the substrate and the back side of the substrate.

The display device may include a plurality of display modules disposed at a predetermined pitch, and each of the plurality of display modules may include a substrate; It may include a display panel and a support layer, and the flexible base part of the display panel may come into contact with the flexible base part of another adjacent display panel.

A method of manufacturing a display device includes forming a display panel on a front surface of a substrate; exposing a portion of the rear surface of the display panel by removing a portion of the plate; coating a support layer on the exposed rear surface of the display panel; It may include coating an adhesive on the support layer and the display panel and bending the display panel to fix it to the side surface of the substrate and a part of the rear surface of the substrate, the display panel comprising: a pair of curved portions spaced apart from the support layer; And it may include a side cover that connects the pair of curved surfaces and contacts the support layer.

According to an embodiment of the present invention, it is possible to minimize damage or disconnection of the wiring electrode by minimizing the sudden bending of the wiring electrode.

In addition, a bezel between a plurality of display panels can be minimized and high resolution can be secured.

In addition, the flexible substrate portion can be reliably held on the substrate by the support layer.

1 is a conceptual diagram illustrating an embodiment of a display device using a semiconductor light emitting device according to the present invention.
FIG. 2 is a partially enlarged view of part A of FIG. 1 , and FIGS. 3A and 3B are cross-sectional views taken along lines BB and CC of FIG. 2 .
FIG. 4 is a conceptual diagram illustrating the flip chip type semiconductor light emitting device of FIG. 3 .
5A to 5C are conceptual diagrams illustrating various forms of implementing colors in relation to a flip chip type semiconductor light emitting device.
6 is cross-sectional views showing a method of manufacturing a display device using a semiconductor light emitting device of the present invention.
7 is a perspective view showing another embodiment of a display device using the semiconductor light emitting device of the present invention.
FIG. 8 is a cross-sectional view taken along line DD in FIG. 7 .
FIG. 9 is a conceptual diagram illustrating the vertical type semiconductor light emitting device of FIG. 8 .
10 is a diagram illustrating a display device according to an exemplary embodiment.
FIG. 11 is an enlarged view of portion A of FIG. 10 .
12 is an enlarged view showing a first comparative example compared to the present embodiment.
13 is an enlarged view showing a second comparative example compared to the present embodiment.
14 is a diagram comparing the display panel of this embodiment with a comparative example.
15 is a diagram illustrating a display panel formed on a front surface of a substrate according to an exemplary embodiment.
16 is a diagram illustrating a process of removing a part of the substrate shown in FIG. 15;
FIG. 17 is a diagram illustrating a process of coating a support layer on the display panel of FIG. 16 .
18 is a diagram illustrating a process of coating an adhesive on the support layer of FIG. 17;
19 is a diagram illustrating a process of bending the display panel shown in FIG. 18;
20 is a view showing a modified example of the support layer according to this embodiment.

Hereinafter, specific embodiments of the present invention will be described in detail with drawings.

Hereinafter, the embodiments disclosed in this specification will be described in detail with reference to the accompanying drawings, but the same or similar elements are given the same reference numerals regardless of reference numerals, and redundant description thereof will be omitted. The suffixes "module" and "unit" for components used in the following description are given or used together in consideration of ease of writing the specification, and do not have meanings or roles that are distinct from each other by themselves. In addition, in describing the embodiments disclosed in this specification, if it is determined that a detailed description of a related known technology may obscure the gist of the embodiment disclosed in this specification, the detailed description thereof will be omitted. In addition, it should be noted that the accompanying drawings are only for easy understanding of the embodiments disclosed in this specification, and should not be construed as limiting the technical idea disclosed in this specification by the accompanying drawings.

It is also to be understood that when an element such as a layer, region or substrate is referred to as being “on” another element, it may be directly on the other element or intervening elements may exist therebetween. There will be.

The display devices described in this specification include mobile phones, smart phones, laptop computers, digital broadcasting terminals, personal digital assistants (PDAs), portable multimedia players (PMPs), navigation devices, and slate PCs. , Tablet PC, Ultra Book, digital TV, desktop computer, etc. However, those skilled in the art will readily recognize that the configuration according to the embodiment described in this specification may be applied to a device capable of displaying even a new product type to be developed in the future.

1 is a conceptual diagram illustrating an embodiment of a display device using a semiconductor light emitting device according to the present invention.

According to the illustration, information processed by the controller of the display device 100 may be displayed using a display (flexible display).

An example of the display may be bendable, bendable, twistable, foldable, or rolled by an external force. For example, the display may be a flexible display manufactured on a thin and flexible substrate that can be bent, bent, folded, or rolled like paper while maintaining display characteristics of a conventional flat panel display.

In a state in which the flexible display is not bent (eg, a state in which the radius of curvature is infinite, hereinafter referred to as a first state), the display area of the flexible display is flat. In a state bent by an external force in the first state (eg, a state having a finite radius of curvature, hereinafter referred to as a second state), the display area may be a curved surface. As shown, information displayed in the second state may be visual information output on a curved surface.

The visual information of the display is implemented by independently controlling light emission of sub-pixels arranged in a matrix form. The unit pixel means a minimum unit for implementing one color.

A unit pixel of the display may be implemented by a semiconductor light emitting device. In the present invention, a light emitting diode (LED) is exemplified as a type of semiconductor light emitting device that converts current into light. The light emitting diode is formed in a small size, and through this, it can serve as a unit pixel even in the second state.

Hereinafter, a display implemented using the light emitting diode will be described in more detail with reference to drawings.

2 is a partially enlarged view of part A of FIG. 1, FIGS. 3A and 3B are cross-sectional views taken along lines B-B and C-C of FIG. 2, and FIG. 4 is a conceptual diagram showing the flip chip type semiconductor light emitting device of FIG. 3A, 5A to 5C are conceptual diagrams illustrating various forms of implementing colors in relation to a flip chip type semiconductor light emitting device.

Referring to FIGS. 2, 3A and 3B , the display device 100 using a semiconductor light emitting device of a passive matrix (PM) type is exemplified as the display device 100 using a semiconductor light emitting device. However, the example described below is also applicable to an active matrix (AM) type semiconductor light emitting device.

The display device 100 includes a substrate 110, a first electrode 120, a conductive adhesive layer 130, a second electrode 140, and a plurality of semiconductor light emitting devices 150.

An example of the substrate 110 may be a flexible substrate. For example, in order to implement a flexible display device, the substrate 110 may include glass or polyimide (PI). In addition, as long as it is an insulating and flexible material, for example, PEN (Polyethylene Naphthalate), PET (Polyethylene Terephthalate), etc. may be used. In addition, the substrate 110 may be any transparent material or opaque material.

The substrate 110 may be a wiring board on which the first electrode 120 is disposed, and thus the first electrode 120 may be positioned on the substrate 110 .

According to the illustration, the insulating layer 160 may be disposed on the substrate 110 on which the first electrode 120 is located, and the auxiliary electrode 170 may be located on the insulating layer 160 . In this case, a state in which the insulating layer 160 is stacked on the substrate 110 may become one wiring substrate. More specifically, the insulating layer 160 is made of an insulating and flexible material such as polyimide (PI, Polyimide), PET, PEN, etc., and may be integrally formed with the substrate 110 to form a single substrate.

The auxiliary electrode 170 is an electrode that electrically connects the first electrode 120 and the semiconductor light emitting device 150, and is located on the insulating layer 160 and is disposed corresponding to the position of the first electrode 120. For example, the auxiliary electrode 170 has a dot shape and may be electrically connected to the first electrode 120 through an electrode hole 171 penetrating the insulating layer 160 . The electrode hole 171 may be formed by filling the via hole with a conductive material.

Referring to the drawings, a conductive adhesive layer 130 is formed on one surface of the insulating layer 160, but the present invention is not necessarily limited thereto. For example, a layer performing a specific function is formed between the insulating layer 160 and the conductive adhesive layer 130, or the conductive adhesive layer 130 is disposed on the substrate 110 without the insulating layer 160. It is also possible. In a structure in which the conductive adhesive layer 130 is disposed on the substrate 110, the conductive adhesive layer 130 may serve as an insulating layer.

The conductive adhesive layer 130 may be a layer having adhesiveness and conductivity, and for this purpose, a material having conductivity and a material having adhesiveness may be mixed in the conductive adhesive layer 130 . In addition, the conductive adhesive layer 130 has ductility, and through this, a flexible function is possible in the display device.

As an example, the conductive adhesive layer 130 may be an anisotropic conductive film (ACF), an anisotropic conductive paste, a solution containing conductive particles, or the like. The conductive adhesive layer 130 may be configured as a layer that allows electrical interconnection in the Z direction penetrating the thickness but has electrical insulation properties in the horizontal X-Y direction. Accordingly, the conductive adhesive layer 130 may be referred to as a Z-axis conductive layer (however, it will be referred to as a 'conductive adhesive layer' hereinafter).

The anisotropic conductive film is a film in which an anisotropic conductive medium is mixed with an insulating base member, and when heat and pressure are applied, only a specific portion becomes conductive by the anisotropic conductive medium. Hereinafter, it will be described that heat and pressure are applied to the anisotropic conductive film, but other methods are also possible for the anisotropic conductive film to partially have conductivity. This method may be, for example, applying only one of the heat and pressure or UV curing.

Also, the anisotropic conductive medium may be, for example, conductive balls or conductive particles. According to the illustration, in this example, the anisotropic conductive film is a film in which conductive balls are mixed with an insulating base member, and when heat and pressure are applied, only a specific portion has conductivity by the conductive balls. The anisotropic conductive film may be in a state in which a core of a conductive material contains a plurality of particles covered by an insulating film made of polymer, and in this case, the portion to which heat and pressure are applied becomes conductive by the core as the insulating film is destroyed. . At this time, the shape of the core is deformed to form layers that contact each other in the thickness direction of the film. As a more specific example, heat and pressure are applied to the anisotropic conductive film as a whole, and electrical connection in the Z-axis direction is partially formed due to a difference in height between the counterparts adhered by the anisotropic conductive film.

As another example, the anisotropic conductive film may be in a state in which a plurality of particles coated with a conductive material are contained in an insulating core. In this case, the portion to which heat and pressure are applied deforms (presses) the conductive material and becomes conductive in the thickness direction of the film. As another example, a form in which the conductive material passes through the insulating base member in the Z-axis direction to have conductivity in the thickness direction of the film is also possible. In this case, the conductive material may have sharp ends.

According to the drawing, the anisotropic conductive film may be a fixed array anisotropic conductive film configured in a form in which conductive balls are inserted into one surface of an insulating base member. More specifically, the insulating base member is formed of a material having adhesive properties, and the conductive balls are intensively disposed on the bottom portion of the insulating base member, and when heat and pressure are applied from the base member, the conductive balls are deformed together. conduction in the vertical direction.

However, the present invention is not necessarily limited to this, and the anisotropic conductive film has a form in which conductive balls are randomly mixed in an insulating base member, or a form in which conductive balls are disposed on any one layer composed of a plurality of layers (double- ACF), etc. are all possible.

The anisotropic conductive paste is a combination of paste and conductive balls, and may be a paste in which conductive balls are mixed with an insulating and adhesive base material. In addition, the solution containing conductive particles may be a solution containing conductive particles or nano particles.

Referring back to the drawing, the second electrode 140 is spaced apart from the auxiliary electrode 170 and positioned on the insulating layer 160 . That is, the conductive adhesive layer 130 is disposed on the insulating layer 160 where the auxiliary electrode 170 and the second electrode 140 are located.

After forming the conductive adhesive layer 130 with the auxiliary electrode 170 and the second electrode 140 positioned on the insulating layer 160, the semiconductor light emitting device 150 is connected in a flip chip form by applying heat and pressure. , the semiconductor light emitting device 150 is electrically connected to the first electrode 120 and the second electrode 140 .

Referring to FIG. 4 , the semiconductor light emitting device may be a flip chip type light emitting device.

For example, the semiconductor light emitting device includes a p-type electrode 156, a p-type semiconductor layer 155 on which the p-type electrode 156 is formed, an active layer 154 formed on the p-type semiconductor layer 155, and an active layer ( 154), an n-type semiconductor layer 153 formed on the n-type semiconductor layer 153, and an n-type electrode 152 spaced apart from the p-type electrode 156 in a horizontal direction. In this case, the p-type electrode 156 may be electrically connected to the auxiliary electrode 170 through the conductive adhesive layer 130, and the n-type electrode 152 may be electrically connected to the second electrode 140.

Referring back to FIGS. 2 , 3A and 3B , the auxiliary electrode 170 may be formed long in one direction, so that one auxiliary electrode may be electrically connected to the plurality of semiconductor light emitting devices 150 . For example, p-type electrodes of left and right semiconductor light emitting elements centered on the auxiliary electrode may be electrically connected to one auxiliary electrode.

More specifically, the semiconductor light emitting device 150 is press-fitted into the conductive adhesive layer 130 by heat and pressure, and through this, a gap between the p-type electrode 156 and the auxiliary electrode 170 of the semiconductor light emitting device 150 is formed. Only the portion and the portion between the n-type electrode 152 and the second electrode 140 of the semiconductor light emitting device 150 have conductivity, and the other portion does not have conductivity because the semiconductor light emitting device is not press-fitted. In this way, the conductive adhesive layer 130 not only mutually couples the semiconductor light emitting device 150 and the auxiliary electrode 170 and between the semiconductor light emitting device 150 and the second electrode 140, but also forms an electrical connection.

In addition, the plurality of semiconductor light emitting devices 150 constitutes a light emitting device array, and a phosphor layer 180 is formed in the light emitting device array.

The light emitting device array may include a plurality of semiconductor light emitting devices having different luminance values. Each semiconductor light emitting device 150 constitutes a unit pixel and is electrically connected to the first electrode 120 . For example, the number of first electrodes 120 may be plural, the semiconductor light emitting elements may be arranged in several rows, and the semiconductor light emitting elements of each row may be electrically connected to one of the plurality of first electrodes.

In addition, since the semiconductor light emitting elements are connected in a flip chip form, semiconductor light emitting elements grown on a transparent dielectric substrate can be used. Also, the semiconductor light emitting devices may be, for example, nitride semiconductor light emitting devices. Since the semiconductor light emitting device 150 has excellent luminance, individual unit pixels can be configured even with a small size.

According to the drawing, barrier ribs 190 may be formed between the semiconductor light emitting devices 150 . In this case, the barrier rib 190 may serve to separate individual unit pixels from each other, and may be integrally formed with the conductive adhesive layer 130 . For example, by inserting the semiconductor light emitting device 150 into the anisotropic conductive film, the base member of the anisotropic conductive film may form the barrier rib.

In addition, if the base member of the anisotropic conductive film is black, the barrier rib 190 may have reflective properties and increase contrast even without a separate black insulator.

As another example, a reflective barrier rib may be separately provided as the barrier rib 190 . In this case, the barrier rib 190 may include a black or white insulator according to the purpose of the display device. When the barrier rib of the white insulator is used, reflectivity may be increased, and when the barrier rib of the black insulator is used, the contrast ratio may be increased while having a reflective characteristic.

The phosphor layer 180 may be positioned on an outer surface of the semiconductor light emitting device 150 . For example, the semiconductor light emitting device 150 is a blue semiconductor light emitting device emitting blue (B) light, and the phosphor layer 180 performs a function of converting the blue (B) light into a color of a unit pixel. The phosphor layer 180 may be a red phosphor 181 or a green phosphor 182 constituting individual pixels.

That is, a red phosphor 181 capable of converting blue light into red (R) light may be stacked on a blue semiconductor light emitting element at a position forming a red unit pixel, and at a position forming a green unit pixel, a blue phosphor 181 may be stacked. A green phosphor 182 capable of converting blue light into green (G) light may be stacked on the semiconductor light emitting device. In addition, only a blue semiconductor light emitting device may be used alone in a portion constituting a blue unit pixel. In this case, red (R), green (G), and blue (B) unit pixels may form one pixel. More specifically, phosphors of one color may be stacked along each line of the first electrode 120 . Accordingly, one line in the first electrode 120 may be an electrode for controlling one color. That is, red (R), green (G), and blue (B) colors may be sequentially disposed along the second electrode 140, and through this, a unit pixel may be implemented.

However, the present invention is not necessarily limited to this, and the semiconductor light emitting device 150 and the quantum dot (QD) are combined instead of the phosphor to implement red (R), green (G), and blue (B) unit pixels. there is.

In addition, a black matrix 191 may be disposed between each phosphor layer to improve contrast. That is, the black matrix 191 can improve the contrast between light and dark.

However, the present invention is not necessarily limited thereto, and other structures for realizing blue, red, and green may be applied.

Referring to FIG. 5A , each semiconductor light emitting device 150 is mainly made of gallium nitride (GaN), and indium (In) and/or aluminum (Al) are added together to emit high-output light emitting various lights including blue. It can be implemented as an element.

In this case, the semiconductor light emitting device 150 may be a red, green, and blue semiconductor light emitting device to form a sub-pixel, respectively. For example, red, green, and blue semiconductor light emitting devices R, G, and B are alternately disposed, and red, green, and blue unit pixels are provided by the red, green, and blue semiconductor light emitting devices. These form one pixel, and through this, a full color display can be implemented.

Referring to FIG. 5B , the semiconductor light emitting device may include a white light emitting device W including a yellow phosphor layer for each device. In this case, in order to form a unit pixel, a red phosphor layer 181, a green phosphor layer 182, and a blue phosphor layer 183 may be provided on the white light emitting device W. In addition, a unit pixel may be formed by using a color filter in which red, green, and blue colors are repeated on the white light emitting element W.

Referring to FIG. 5C , a structure in which a red phosphor layer 181, a green phosphor layer 182, and a blue phosphor layer 183 are provided on the ultraviolet light emitting device UV is also possible. In this way, the semiconductor light emitting device can be used in the entire range of visible light as well as ultraviolet (UV), and can be expanded to a semiconductor light emitting device in which ultraviolet (UV) can be used as an excitation source of an upper phosphor. .

Looking again at this example, the semiconductor light emitting device 150 is positioned on the conductive adhesive layer 130 to constitute a unit pixel in the display device. Since the semiconductor light emitting device 150 has excellent luminance, individual unit pixels can be configured even with a small size. Each semiconductor light emitting device 150 may have a side length of 80 μm or less, and may be a rectangular or square device. In the case of a rectangle, it may be 20 X 80 μm or less in size.

In addition, even when a square semiconductor light emitting device 150 having a side length of 10 μm is used as a unit pixel, sufficient brightness is obtained to form a display device. Therefore, in the case where the size of a unit pixel is a rectangular pixel having one side of 600 μm and the other side of 300 μm, for example, the distance between the semiconductor light emitting devices is relatively large. Accordingly, in this case, it is possible to implement a flexible display device having a high image quality higher than that of HD image quality.

The display device using the semiconductor light emitting device described above can be manufactured by a new type of manufacturing method. Hereinafter, the manufacturing method will be described with reference to FIG. 6 .

6 is cross-sectional views illustrating a method of manufacturing a display device using a semiconductor light emitting device of the present invention.

Referring to this figure, first, a conductive adhesive layer 130 is formed on the insulating layer 160 where the auxiliary electrode 170 and the second electrode 140 are positioned. The insulating layer 160 is stacked on the first substrate 110 to form one substrate (or wiring board), and the first electrode 120, the auxiliary electrode 170 and the second electrode 140 are formed on the wiring board. this is placed In this case, the first electrode 120 and the second electrode 140 may be disposed in directions orthogonal to each other. In addition, in order to implement a flexible display device, each of the first substrate 110 and the insulating layer 160 may include glass or polyimide (PI).

The conductive adhesive layer 130 may be implemented by, for example, an anisotropic conductive film, and for this purpose, the anisotropic conductive film may be applied to the substrate on which the insulating layer 160 is positioned.

Next, the second substrate 112 on which the plurality of semiconductor light emitting devices 150 corresponding to the positions of the auxiliary electrode 170 and the second electrode 140 and constituting individual pixels is located is disposed on the semiconductor light emitting device 150. ) is disposed to face the auxiliary electrode 170 and the second electrode 140.

In this case, the second substrate 112 is a growth substrate on which the semiconductor light emitting device 150 is grown, and may be a sapphire substrate or a silicon substrate.

When the semiconductor light emitting device is formed in a wafer unit, it can be effectively used in a display device by having a gap and a size that can achieve a display device.

Then, the wiring substrate and the second substrate 112 are thermally compressed. For example, the wiring board and the second board 112 may be thermally compressed by applying an ACF press head. The wiring substrate and the second substrate 112 are bonded by the thermal compression bonding. Due to the characteristics of the anisotropic conductive film having conductivity by thermal compression, only the portion between the semiconductor light emitting device 150, the auxiliary electrode 170, and the second electrode 140 has conductivity, and through this, the electrodes and semiconductor light emitting Element 150 may be electrically connected. At this time, the semiconductor light emitting device 150 is inserted into the anisotropic conductive film, through which a barrier rib may be formed between the semiconductor light emitting devices 150 .

Then, the second substrate 112 is removed. For example, the second substrate 112 may be removed using a laser lift-off (LLO) or chemical lift-off (CLO) method.

Finally, the second substrate 112 is removed to expose the semiconductor light emitting devices 150 to the outside. If necessary, a transparent insulating layer (not shown) may be formed by coating silicon oxide (SiOx) or the like on the wiring board to which the semiconductor light emitting device 150 is bonded.

In addition, a step of forming a phosphor layer on one surface of the semiconductor light emitting device 150 may be further included. For example, the semiconductor light emitting device 150 is a blue semiconductor light emitting device that emits blue (B) light, and a red or green phosphor for converting the blue (B) light into a color of a unit pixel is the blue semiconductor light emitting device. A layer may be formed on one side of the device.

The manufacturing method or structure of the display device using the semiconductor light emitting device described above may be modified in various forms. As an example, a vertical type semiconductor light emitting device may also be applied to the display device described above. Hereinafter, a vertical structure will be described with reference to FIGS. 5 and 6 .

In addition, in the modified examples or embodiments described below, the same or similar reference numerals are assigned to components identical or similar to those in the previous example, and the description is replaced with the first description.

7 is a perspective view showing another embodiment of a display device using the semiconductor light emitting device of the present invention, FIG. 8 is a cross-sectional view taken along line D-D of FIG. 7, and FIG. 9 is a conceptual view showing the vertical type semiconductor light emitting device of FIG. am.

Referring to the drawings, a display device may be a display device using a passive matrix (PM) type vertical semiconductor light emitting device.

The display device includes a substrate 210, a first electrode 220, a conductive adhesive layer 230, a second electrode 240, and a plurality of semiconductor light emitting devices 250.

The substrate 210 is a wiring board on which the first electrode 220 is disposed, and may include polyimide (PI) to implement a flexible display device. In addition, any insulating and flexible material may be used.

The first electrode 220 is positioned on the substrate 210 and may be formed as a bar-shaped electrode that is long in one direction. The first electrode 220 may serve as a data electrode.

The conductive adhesive layer 230 is formed on the substrate 210 where the first electrode 220 is located. Like a display device to which a flip chip type light emitting element is applied, the conductive adhesive layer 230 includes an anisotropic conductive film (ACF), an anisotropic conductive paste, and a solution containing conductive particles. ) and so on. However, in this embodiment, a case in which the conductive adhesive layer 230 is implemented by an anisotropic conductive film is exemplified.

After the anisotropic conductive film is placed on the substrate 210 in a state where the first electrode 220 is located, when the semiconductor light emitting device 250 is connected by applying heat and pressure, the semiconductor light emitting device 250 first It is electrically connected to the electrode 220. At this time, it is preferable that the semiconductor light emitting device 250 be disposed on the first electrode 220 .

As described above, the electrical connection is generated because the anisotropic conductive film partially has conductivity in the thickness direction when heat and pressure are applied. Therefore, the anisotropic conductive film is divided into a conductive portion and a non-conductive portion in the thickness direction.

In addition, since the anisotropic conductive film contains an adhesive component, the conductive adhesive layer 230 implements mechanical coupling as well as electrical connection between the semiconductor light emitting device 250 and the first electrode 220 .

As such, the semiconductor light emitting device 250 is positioned on the conductive adhesive layer 230, and constitutes an individual pixel in the display device through this. Since the semiconductor light emitting device 250 has excellent luminance, individual unit pixels can be configured even with a small size. Each semiconductor light emitting device 250 may have a side length of 80 μm or less, and may be a rectangular or square device. In the case of a rectangle, it may be 20 X 80 μm or less in size.

The semiconductor light emitting device 250 may have a vertical structure.

Between the vertical semiconductor light emitting devices, a plurality of second electrodes 240 disposed in a direction crossing the longitudinal direction of the first electrode 220 and electrically connected to the vertical semiconductor light emitting device 250 are positioned.

Referring to FIG. 9 , the vertical semiconductor light emitting device includes a p-type electrode 256, a p-type semiconductor layer 255 formed on the p-type electrode 256, and an active layer 254 formed on the p-type semiconductor layer 255. ), an n-type semiconductor layer 253 formed on the active layer 254, and an n-type electrode 252 formed on the n-type semiconductor layer 253. In this case, the p-type electrode 256 located at the bottom may be electrically connected to the first electrode 220 by the conductive adhesive layer 230, and the n-type electrode 252 located at the top may be electrically connected to the second electrode 240, which will be described later. ) and electrically connected. The vertical type semiconductor light emitting device 250 has a great advantage in that the chip size can be reduced because the electrodes can be arranged vertically.

Referring back to FIG. 8 , a phosphor layer 280 may be formed on one surface of the semiconductor light emitting device 250 . For example, the semiconductor light emitting device 250 is a blue semiconductor light emitting device 251 emitting blue (B) light, and includes a phosphor layer 280 for converting the blue (B) light into a color of a unit pixel. It can be. In this case, the phosphor layer 280 may include a red phosphor 281 and a green phosphor 282 constituting individual pixels.

That is, a red phosphor 281 capable of converting blue light into red (R) light may be stacked on a blue semiconductor light emitting element at a position forming a red unit pixel, and at a position forming a green unit pixel, a blue phosphor 281 may be stacked. A green phosphor 282 capable of converting blue light into green (G) light may be stacked on the semiconductor light emitting device. In addition, only a blue semiconductor light emitting element may be used alone in a portion constituting a blue unit pixel. In this case, red (R), green (G), and blue (B) unit pixels may form one pixel.

However, the present invention is not necessarily limited thereto, and as described above in a display device to which a flip chip type light emitting element is applied, other structures for realizing blue, red, and green may be applied.

Referring again to this embodiment, the second electrode 240 is positioned between the semiconductor light emitting devices 250 and electrically connected to the semiconductor light emitting devices 250 . For example, the semiconductor light emitting devices 250 may be arranged in a plurality of columns, and the second electrode 240 may be positioned between the columns of the semiconductor light emitting devices 250 .

Since the distance between the semiconductor light emitting devices 250 forming individual pixels is sufficiently large, the second electrode 240 may be positioned between the semiconductor light emitting devices 250 .

The second electrode 240 may be formed as an electrode in the form of a bar long in one direction, and may be disposed in a direction perpendicular to the first electrode.

In addition, the second electrode 240 and the semiconductor light emitting device 250 may be electrically connected by a connection electrode protruding from the second electrode 240 . More specifically, the connection electrode may be an n-type electrode of the semiconductor light emitting device 250 . For example, the n-type electrode is formed as an ohmic electrode for ohmic contact, and the second electrode covers at least a portion of the ohmic electrode by printing or deposition. Through this, the second electrode 240 and the n-type electrode of the semiconductor light emitting device 250 may be electrically connected.

According to the drawing, the second electrode 240 may be positioned on the conductive adhesive layer 230 . In some cases, a transparent insulating layer (not shown) including silicon oxide (SiOx) or the like may be formed on the substrate 210 on which the semiconductor light emitting device 250 is formed. When the second electrode 240 is positioned after the transparent insulating layer is formed, the second electrode 240 is positioned on the transparent insulating layer. Also, the second electrode 240 may be formed to be spaced apart from the conductive adhesive layer 230 or the transparent insulating layer.

If a transparent electrode such as ITO (Indium Tin Oxide) is used to position the second electrode 240 on the semiconductor light emitting device 250, the ITO material has a problem of poor adhesion to the n-type semiconductor layer. there is. Accordingly, the present invention has the advantage of not having to use a transparent electrode such as ITO by placing the second electrode 240 between the semiconductor light emitting devices 250 . Accordingly, the light extraction efficiency can be improved by using a conductive material having good adhesion to the n-type semiconductor layer as a horizontal electrode without being restricted in selecting a transparent material.

According to the drawing, barrier ribs 290 may be positioned between the semiconductor light emitting devices 250 . That is, barrier ribs 290 may be disposed between the vertical semiconductor light emitting devices 250 to isolate the semiconductor light emitting devices 250 constituting individual pixels. In this case, the barrier rib 290 may serve to separate individual unit pixels from each other, and may be integrally formed with the conductive adhesive layer 230 . For example, by inserting the semiconductor light emitting device 250 into the anisotropic conductive film, the base member of the anisotropic conductive film may form the barrier rib.

In addition, when the base member of the anisotropic conductive film is black, the barrier rib 290 may have reflective characteristics and increase contrast even without a separate black insulator.

As another example, a reflective barrier rib may be separately provided as the barrier rib 190 . The barrier rib 290 may include a black or white insulator according to the purpose of the display device.

If the second electrode 240 is directly positioned on the conductive adhesive layer 230 between the semiconductor light emitting devices 250, the barrier rib 290 is formed between the vertical semiconductor light emitting device 250 and the second electrode 240. can be placed in between. Therefore, by using the semiconductor light emitting device 250, individual unit pixels can be formed even with a small size, and the distance between the semiconductor light emitting devices 250 is relatively large enough to allow the second electrode 240 to be connected to the semiconductor light emitting device 250. ), and there is an effect of realizing a flexible display device having HD quality.

Also, according to the drawing, a black matrix 291 may be disposed between each phosphor to improve contrast. That is, the black matrix 291 can improve contrast between light and dark.

As described above, the semiconductor light emitting device 250 is positioned on the conductive adhesive layer 230 and constitutes an individual pixel in the display device through this. Since the semiconductor light emitting device 250 has excellent luminance, individual unit pixels can be configured even with a small size. Accordingly, a full color display in which red (R), green (G), and blue (B) unit pixels constitute one pixel can be realized by the semiconductor light emitting device.

FIG. 10 is a view showing a display device according to the present embodiment, FIG. 11 is an enlarged view of part A of FIG. 10, and FIG. 12 is an enlarged view showing a first comparative example compared to the present embodiment. 13 is an enlarged view showing a second comparative example compared to the present embodiment.

The display device may include a substrate 310 , a display panel D, and a support layer 400 .

The substrate 310, the display panel D, and the support layer 400 may configure the display module 300.

The display module 300 may be a combination of a plurality of members, and the display module 300 is, for example, a Micro LED Display (LDM), a passive-matrix OLED (PMOLED), or an active matrix organic light emitting diode (PMOLED). It may be a light emitting diode (Active-matrix OLED; AMOLED) or a quantum dot semiconductor light emitting device (quantum　dot LED; QLED).

The display device may include a plurality of display modules 300 . In the display device, 4, 9, or 16 display modules 300 may be assembled.

A plurality of display modules 300 may be arrayed close to each other. The plurality of display modules 300 may be arranged in multiple rows in a vertical direction and in multiple columns in a left-right direction.

The plurality of display modules 300 may be unit displays 300a and 300b. The plurality of display modules 300 will be described including a first unit display 300a and a second unit display 300b that are closely arranged. Hereinafter, a common configuration of the first unit display 300a and the second unit display 300b will be referred to as the display module 300 and described.

Each of the plurality of display modules 300 may include a substrate 310 , a display panel D, and a support layer 400 .

The substrate 310 may be a base substrate on which the display panel D is formed. The substrate 310 may be a support substrate supporting the display panel D.

The substrate 310 may be made of a flexible material or a rigid material. An example of the substrate 310 may include a glass substrate. The substrate 310 is not limited to a glass substrate and may be made of plastic or the like.

The substrate 310 may be a rectangular parallelepiped, the front surface 311 of the substrate 310 may face forward, and the rear surface 312 of the substrate 310 may face backward.

The substrate 310 may have a plate body shape having a small intestine thickness, and the front surface 311 and the rear surface 312 may be connected by a circumferential surface 313 .

The peripheral surface 313 of the substrate 310 is a circuit edge of the substrate 310, and the peripheral surface 313 of the substrate 310 excludes the front surface 311 and the rear surface 312 of the substrate 310. side can be defined.

Hereinafter, the circumferential surface 313 of the substrate 310 is referred to as the side surface 313 of the substrate 310 and described, and the circumferential surface of the substrate 310 and the side surface of the substrate 310 are described using the same reference numerals. .

The side surface 313 of the substrate 310 may have a flat shape rather than a curved shape. A side surface 313 of the substrate 310 may be orthogonal to a front surface 311 of the substrate 310 and a rear surface 312 of the substrate 310 .

The display panel D may be composed of a combination of a plurality of members. The display panel D may include a plurality of pixels 350 . Each of the plurality of pixels 350 may be a combination of red (R), green (G), and blue (B) unit pixels. The pixels 350 may be arranged at a predetermined pitch.

The display panel D may be a flexible display in which a plurality of pixels 350 are formed and can be bent or bent.

The display panel D may include a flexible substrate 318 , a wiring electrode 320 , a plurality of pixels 350 and a protective layer 390 .

The flexible substrate 318 may contact the substrate 310 .

The wiring electrode 320 may be formed on the flexible substrate 318 .

An example of the pixel 350 may be the semiconductor light emitting device 350 . Hereinafter, the pixel 350 and the semiconductor light emitting device 350 will be described using the same reference numerals.

A plurality of semiconductor light emitting devices 350 may be formed on the wiring electrode 320 .

The protective layer 390 may cover the wiring electrode 320 and the plurality of semiconductor light emitting devices 350 .

The display panel (D) may include a display unit (E) and a flexible base unit (F).

The display unit E may be defined as a portion of the display panel D formed on the front surface 311 of the substrate 310 .

The display unit E may be defined as a pixel area or a display area.

The display unit E is a region where the semiconductor light emitting device 350 is formed, and may include a flexible substrate 318, a wiring electrode 320, a plurality of semiconductor light emitting devices 350, and a protective layer 390. can

The flexible substrate portion (F) may be defined as a portion surrounding a portion of the side surface 313 of the substrate 310 and the rear surface 312 of the substrate 310 . The flexible base unit (F) may be formed to extend from the display unit (E).

The flexible substrate portion F may be defined as a bezel area or a non-display area.

The flexible substrate portion F is a region in which the semiconductor light emitting device 350 is not formed, and may include all of the flexible substrate 318 , the wiring electrode 320 , and the protective layer 390 .

The flexible substrate portion F may include a pair of curved portions 410 and 420 and a side cover portion 430 connecting the pair of curved portions 410 and 420 and contacting the support layer 350. there is.

The pair of curved portions 410 and 420 may be spaced apart in the front-rear direction. The pair of curved portions 410 and 420 may include a front curved portion 410 and a rear curved portion 420 that is spaced apart from the front curved portion 410 in the front-rear direction.

Each of the pair of curved portions 410 and 420 may have an arc shape in cross-section, and particularly may have an arc shape. A central angle of each of the pair of curved portions 410 and 420 may be 80° to 100°.

The pair of curved portions 410 and 420 each have a radius of curvature r, and the curved portions 410 and 420 are preferably formed so as not to be sharply bent, and the radius of curvature r is not too large. it is desirable to be

The side cover part 430 may be spaced apart from the side surface 313 of the substrate 310 and parallel to the side surface 313 of the substrate 310 . The side cover part 430 may be defined as a flat part formed between a pair of curved parts 410 and 420 .

The side cover portion 430 may be defined as a portion parallel to the side surface 313 of the substrate 310 among the flexible substrate portions F. Depending on the position of the side cover part 4300, the size and shape of the curved parts 410 and 420 may be determined, and the radius of curvature r of the curved parts 410 and 420 may be determined.

The position of the side cover part 430 may be determined by the support layer 400 , and the curved parts 410 and 420 may have a curvature radius (r) within an appropriate range by the support layer 400 .

The support layer 400 may be disposed between the side surface 313 of the substrate 310 and the flexible substrate portion F. The support layer 400 may support the flexible substrate portion (F). The support layer 400 may be positioned between the side surface 313 of the substrate 310 and the side cover part 430 and may support the side cover part 430 .

The support layer 400 may be fixed to one of the side surface 313 of the substrate 310 and the flexible substrate portion F, and may be attached to the other.

An example of the support layer 400 may be attached to the side surface 313 of the substrate 310 after being formed on the rear surface of the flexible substrate portion F. Another example of the support layer 400 may be formed on the side surface 303 of the substrate 310 and then attached to the flexible substrate portion F.

An example of the support layer 400 may be coated on the flexible substrate portion (F). The support layer 400 may maintain the side cover part 430 so that the side cover part 430 is spaced apart from the side surface 313 of the substrate 310 .

The support layer 400 may support the side cover part 430 so that the side cover part 430 does not approach the side surface 313 of the substrate 310 .

The pair of curved portions 410 and 420 may not directly support the support layer 400 and may be spaced apart from the support layer 400 . The pair of curved portions 410 and 420 may not come into contact with the support layer 400 .

The pair of curved portions 410 and 420 may be defined as curved portions separated from the support layer 400 and bent in a curved shape.

The support layer 400 may hold the side cover part 430 so that the side cover part 430 does not move in a direction away from the side surface 313 of the substrate 310 .

The support layer 400 may be fixed to the side surface 313 of the substrate 310 after being fixed to the flexible substrate portion F.

The display device may further include an adhesive 440 . The adhesive 440 may be coated on the support layer 400 and the flexible substrate portion F. The adhesive 440 may be disposed to cover the support layer 400 . Adhesive 440 may be attached to side 313 of substrate 310 .

The adhesive 440 may fix the support layer 400 to the side surface 313 of the substrate 310 .

The support layer 400 may include a first surface 401 facing the side surface 313 of the substrate 310 and a second surface 402 facing the flexible substrate portion F. The supporting layer 400 may have a trapezoidal cross-sectional shape.

Each of the first surface 401 and the second surface 402 may be a flat surface rather than a curved surface.

The adhesive 440 may be attached to the first surface 401 and the flexible substrate portion F, and may be attached to the side surface of the substrate 310 .

The area of the second surface 402 may be larger than that of the first surface 401 .

The support layer 400 and the adhesive 440 may be surrounded and protected by the side surface 313 of the substrate 310 and the flexible substrate portion F.

Meanwhile, the display module 300 of this embodiment does not include a separate adhesive 440, and the support layer 400 itself may have adhesive strength.

A portion of the flexible base unit F may be disposed on the rear surface 313 of the substrate 310 . A portion of the flexible substrate portion F located on the rear surface of the substrate 310 may be defined as a connection portion 450 .

The connection part 450 may include a flexible substrate 318 , a wiring electrode 320 and a protective layer 390 .

A driver 460 ( FIG. 10 ) may be disposed behind the substrate 310 to control driving of the pixel 350 . The driving unit 460 may be connected to the flexible base unit (F), and may be connected to the connection unit 450 of the flexible base unit (F).

The driving part 460 may be connected to the wiring electrode 320 among the connection parts 450 and may be connected to a part of the wiring electrode 320 positioned behind the substrate 310 .

Each flexible substrate portion F of the display module 300 may be adjacent to other display modules in contact with the flexible substrate portion F.

An outer surface of the flexible substrate portion F of the first unit display 300a may face an outer surface of the flexible substrate portion F of the second unit display 300b.

Between the substrate 310 of the first unit display 300a and the substrate 310 of the second unit display 300b, an adhesive 440, a support layer 400, and a flexible substrate of the first unit display 300a The unit F, the flexible substrate unit F of the second unit display 300b, the support layer 400, and the adhesive 440 may be disposed.

A space between the substrate 310 of the first unit display 300a and the substrate 310 of the second unit display 300b may be a bezel area L that does not actually display a screen.

It is preferable that the plurality of display modules 300 can minimize the bezel area L and have high reliability of the display panel D.

The first comparative example shown in FIG. 12 is a case where the support layer 400 of the present embodiment is not provided and the bezel area L' is smaller than that of the present embodiment.

The second comparative example shown in FIG. 13 is a case where the support layer 400 of the present embodiment is not provided and the bezel area L" is smaller than that of the present embodiment.

In the first comparative example shown in FIG. 12, the size of the bezel area L' is small because the display panel D is abruptly bent, but the wiring resistance of the sharply bent portion C of the wiring electrode 320 may increase, and a disconnection defect of the wiring electrode 320 may occur. That is, when the wire electrode 320 is bent, due to the respective thicknesses of the flexible substrate 318, the wire electrode 320, and the protective layer 390, the curved portions 410 and 420 have a limit radius of curvature, If bent below the radius of curvature, the wiring electrode 320 is damaged, resistance increases, and a wire breakage occurs.

Meanwhile, in the second comparative example illustrated in FIG. 13 , the display panel D may be gently bent to protect the wire electrode 320 , whereas the size of the bezel area L may be increased.

14 is a diagram comparing the display panel of this embodiment with a comparative example.

The curvature r of the curved portions 410 and 420 may be smaller than half of the thickness h of the substrate 310 .

14(a) and 14(b) show cases in which the thickness h of the substrate 310 is greater than twice the radius of curvature r of the curved portions 410 and 420. (ie, 2r <h) And, the length (M) of the support layer 400 can be formed shorter than the length limiting the radius of curvature (r) of the curved parts 410 and 420 twice in the thickness (h) of the substrate 310. .(i.e. M<h-2r)

In (c) of FIG. 14, the thickness (h) of the substrate 310 is equal to twice that of the curved portions 410 and 420, and the support layer 400 is not provided. (2r=h)

14 (a) and 14 (b), when the thickness (h) of the substrate 310 is greater than twice the limit radius of curvature (r, bending limit) of the flexible substrate 318, the support layer ( 400) may be formed.

15 to 19 are views illustrating a manufacturing process of a display device.

15 is a diagram illustrating a display panel formed on a front surface of a substrate according to an exemplary embodiment.

As shown in FIG. 15 , the display manufacturing method according to this embodiment may include forming a display panel D on the front surface 311 of a substrate 310' (ie, a display panel forming step).

In the display panel forming step, a flexible substrate 318 may be formed on the front surface 311 of the substrate 310', a wiring electrode 320 may be formed on the flexible substrate 318, and a plurality of pixels may be formed on the wiring electrode 320. 350 may be formed, and a protective layer 390 may be formed to cover a portion of the plurality of pixels 350 and the wiring electrode 320 .

16 is a diagram illustrating a process of removing a part of the substrate shown in FIG. 15;

The display manufacturing method of this embodiment may further include a step of removing a part 310" of the substrate 310' (ie, a removing step) as shown in FIG. 16 after the step of forming the display panel.

The removing step may be a step of exposing a part of the rear surface of the display panel D by removing a portion 310" of the substrate 310'. The removing step may include a portion of the flexible substrate 318 adjacent to the edge of the substrate 310. It may be a step to expose.

In the removing step, a scribing process is performed on the portion 310" to be removed of the substrate 310', and then a cutting process of cutting the substrate 310' by using a laser device (not shown) or the like. A separation process may be performed to separate the cut portion 310 "of the substrate 310' from the display panel D.

FIG. 17 is a diagram illustrating a process of coating a support layer on the display panel of FIG. 16 .

The display manufacturing method according to this embodiment may include a step of forming a support layer 400 (ie, a step of forming a support layer) as shown in FIG. 17 after the removal step.

The step of forming the support layer may be a step of coating the support layer 400 on the exposed rear surface of the display panel D.

In the support layer forming step, a portion of the flexible substrate 318 adjacent to the side surface 313 of the substrate 310 may be coated with a polymer resin and cured.

The support layer 400 may be disposed next to the side surface 313 of the substrate 310 and spaced apart from the side surface 313 of the substrate 310, and does not cover the front surface 311 of the flexible substrate 318. It can be exposed along with parts that are not.

18 is a diagram illustrating a process of coating an adhesive on the support layer of FIG. 17 .

The display manufacturing method of the present embodiment may include a step of coating an adhesive 440 on the support layer 400 and the display panel D (ie, the support layer coating step) as shown in FIG. 18 after the step of forming the support layer. there is.

In the support layer coating step, the adhesive 440 may be coated so that the adhesive 440 covers the support layer 400 and the periphery of the support layer 400 in the display panel (D). The adhesive 440 may be coated on the back surface of the flexible substrate 318 .

FIG. 19 is a diagram illustrating a process of bending the display panel shown in FIG. 18 .

In the display manufacturing method of the present embodiment, after the support layer coating step, the display panel (D) is bent and fixed to the side surface 313 of the substrate 310 and a part of the rear surface 312 of the substrate 310 (ie, flexible substrate fixing step). ) may be included.

The display panel D shown in FIG. 18 may be divided into a display unit E located in front of the substrate 310 and a flexible base unit F not located in front of the substrate 310 .

The flexible substrate fixing step is a step of bending the flexible substrate portion (F) such that the flexible substrate portion (F) surrounds a portion of the side surface 313 of the substrate 310 and the rear surface 312 of the substrate 310 (ie, the bending step ) can be.

The adhesive 440 coated on the display panel D may be attached to the side surface 313 of the substrate 310 while being coated on the support layer 400 and the flexible substrate portion F.

The adhesive 440 may be attached to the side surface 313 of the substrate 310 and the rear surface 312 of the substrate 310, and the support layer 400 may be attached to the side surface 313 of the substrate 310 and the flexible substrate portion (F ), and may be positioned between the flexible substrate portion (F), in particular, the side cover portion 430 may be maintained.

During the bending step, the display panel (D), in particular, the flexible substrate portion (F) connects the pair of curved portions 410 and 420 and the pair of curved portions 410 and 420 and contacts the support layer 400. It may include a side cover portion 430 to be.

20 is a view showing a modified example of the support layer according to this embodiment.

The flexible base unit F includes a pair of curved portions 410 and 420 with which the support layer 440 comes into contact and a side cover portion 430 connecting the pair of curved portions, and the support layer 400 is a front support layer. (400a) and a rear support layer (400b) may be included.

The front support layer 400a may contact the front curved portion 410 positioned at the front of the pair of curved portions 410 and 420 .

The rear support layer 400b may contact the rear curved portion 420 of the pair of curved portions 410 and 420 located at the rear.

The front support layer 400a and the rear support layer 400b may be spaced apart in the front and rear directions.

The front support layer (400a) and the rear support layer (400b) have a curved surface facing the flexible substrate portion (F). The front supporting layer 400a and the rear supporting layer 400b have a flat surface facing the side surface 313 of the substrate 310 .

The side cover portion 430 may maintain a flat surface by supporting the pair of curved portions 410 and 420 on the pair of support layers 400a and 400b.

The display device shown in FIG. 20 may have the same or similar configurations as the display device shown in FIG. 14 in configurations other than the location and shape of the support layer 400, and to avoid redundant description, description thereof is made. omit

The above description is merely an example of the technical idea of the present invention, and various modifications and variations can be made to those skilled in the art without departing from the essential characteristics of the present invention.

Therefore, the embodiments disclosed in the present invention are not intended to limit the technical idea of the present invention, but to explain, and the scope of the technical idea of the present invention is not limited by these embodiments.

The protection scope of the present invention should be construed according to the following claims, and all technical ideas within the equivalent range should be construed as being included in the scope of the present invention.

Claims (20)

Board;
a display panel including a display unit formed on the front surface of the substrate, and a flexible substrate unit extending from the display unit and covering a side surface of the substrate and a portion of the rear surface of the substrate; and
A support layer disposed between the side surface of the substrate and the flexible substrate portion to support the flexible substrate portion;
The flexible base unit
a pair of curved portions spaced apart from the support layer;
A display device comprising a side cover portion connecting the pair of curved portions and contacting the support layer. According to claim 1,
the display panel
a flexible substrate in contact with the substrate;
a wiring electrode formed on the flexible substrate;
a plurality of semiconductor light emitting elements formed on the wiring electrode; and
A display device comprising a protective layer covering the wire electrode and the plurality of semiconductor light emitting elements. According to claim 1,
The side cover portion is spaced apart from the side surface, the display device parallel to the side surface. According to claim 1,
The display device of claim 1 , wherein a radius of curvature of the curved portion is less than half of a thickness of the substrate. According to claim 1,
The display device of claim 1, wherein the length of the support layer is shorter than the length obtained by dividing the radius of curvature of the curved portion by twice the radius of curvature of the curved portion in the thickness of the substrate. According to claim 1,
The support layer is a display device coated on the flexible substrate. According to claim 1,
A display device further comprising an adhesive coated on the support layer and the flexible substrate and attached to a side surface of the substrate. According to claim 1,
the support layer
A first surface facing the side of the substrate and a second surface facing the flexible substrate portion,
The area of the second surface is larger than the area of the first surface. In the display device in which a plurality of display modules are arranged at a predetermined pitch,
Each of the plurality of display modules
Board;
a display panel including a display unit formed on the front surface of the substrate, and a flexible substrate unit extending from the display unit and covering a side surface of the substrate and a portion of the rear surface of the substrate; and
A support layer disposed between the side surface of the substrate and the flexible substrate portion to support the flexible substrate portion;
The flexible base unit
a pair of curved portions spaced apart from the support layer; and
Connecting the pair of curved surfaces and contacting the support layer, including a side cover portion parallel to the side surface,
A display device in which another display panel adjacent to the flexible base unit is in contact with the flexible base unit. According to claim 9,
the display panel
a flexible substrate in contact with the substrate;
a wiring electrode formed on the flexible substrate;
a semiconductor light emitting element formed on the wiring electrode; and
A display device comprising a protective layer covering the wiring electrode and the semiconductor light emitting element. According to claim 9,
The display device of claim 1 , wherein a radius of curvature of the curved portion is less than half of a thickness of the substrate. According to claim 9,
The display device of claim 1, wherein the length of the support layer is shorter than the length obtained by dividing the radius of curvature of the curved portion by twice the radius of curvature of the curved portion in the thickness of the substrate. According to claim 9,
The support layer is a display device coated on the flexible substrate. According to claim 9,
A display device further comprising an adhesive coated on the support layer and the flexible substrate and attached to a side surface of the substrate. Forming a display panel on the front surface of the substrate;
exposing a portion of the rear surface of the display panel by removing a portion of the substrate;
coating a support layer on the exposed rear surface of the display panel;
coating an adhesive material on the support layer and the display panel; and
Bending the display panel to fix it to a side surface of the substrate and a part of the rear surface of the substrate;
the display panel
a pair of curved portions spaced apart from the support layer; and
A method of manufacturing a display device comprising a side cover portion connecting the pair of curved portions and contacting the support layer. According to claim 15,
The side cover part is spaced apart from the side surface, and the display device manufacturing method is parallel to the side surface. According to claim 15,
A display device manufacturing method further comprising an adhesive coated on the support layer and the flexible substrate and attached to a side surface of the substrate. According to claim 15,
The method of manufacturing a display device wherein the radius of curvature of the curved portion is less than half of the thickness of the substrate. According to claim 15,
The method of manufacturing a display device in which the length of the support layer is shorter than the length obtained by limiting twice the radius of curvature of the curved portion in the thickness of the substrate. According to claim 15,
The side surface of the substrate is orthogonal to the front surface of the substrate and the back surface of the substrate.

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