KR20230017090A - Display module and wearable electronic device inculding the same - Google Patents

Abstract

A display module and a wearable electronic device comprising the same are disclosed. The disclosed display module may comprise: a substrate; a plurality of light-emitting device units arranged on the substrate; barrier ribs extending from the plurality of light-emitting device units and partitioning sub-pixel regions; a color conversion layer disposed on the plurality of light-emitting device units and emitting excitation light by means of light emitted from the plurality of light-emitting device units and emitting excitation light by the light emitted from the plurality of light-emitting device units; a common electrode including a metal layer which is disposed, as a portion of the plurality of light-emitting device units, on upper portions of the plurality of light-emitting device units that connect the respective light-emitting device units and inside the barrier ribs to be in contact with the upper portions of the plurality of light-emitting device units; and a plurality of individual electrodes which are respectively disposed on opposite surfaces of light-emitting surfaces of the plurality of light-emitting device units. Various other embodiments are possible. According to the present invention, a current can be stably supplied to each of sub-pixels so that the display uniformity can be remarkably enhanced.

Description

Display module and wearable electronic device including the same {DISPLAY MODULE AND WEARABLE ELECTRONIC DEVICE INCULDING THE SAME}

The present disclosure relates to a display module and a wearable electronic device including the display module.

Electronic devices for portable purposes are generally equipped with a flat panel display device and a battery, and have a bar-type, folder-type, or sliding-type appearance. Recently, with the development of electronic communication technology, electronic devices have been miniaturized, and wearable electronic devices that can be worn on a part of the body such as a wrist or head have been commercialized.

Wearable electronic devices have a shape such as a watch or glasses, so they are easy to carry, and as various functions are integrated into a miniaturized device, such as a mobile communication terminal, they satisfy consumer needs.

Various embodiments of the present disclosure may provide a wearable electronic device including a display module capable of stably supplying current to each subpixel.

A display module according to various embodiments of the present disclosure includes a substrate; a plurality of light emitting element units arranged on the substrate; barrier ribs extending from the plurality of light emitting device portions and partitioning sub-pixel regions; a color conversion layer disposed above the plurality of light emitting element units and emitting excitation light by light emitted from the plurality of light emitting element units; a common electrode including a metal layer as a part of the plurality of light emitting device units and disposed on the upper portions of the plurality of light emitting device units connecting the plurality of light emitting device units and inside the barrier rib to contact the upper portions of the plurality of light emitting device units; and a plurality of individual electrodes respectively disposed on opposite surfaces of the light emitting surfaces of the plurality of light emitting element units.

A wearable electronic device according to various embodiments of the present disclosure includes a display module including a substrate and a plurality of sub-pixels arranged on the substrate; a projection lens condensing light emitted from the display module; and a diffractive optical member for entering the light emitted from the projection lens from one side and radiating it to the other side, wherein the plurality of subpixels are formed to extend from a plurality of light emitting device units and to the plurality of light emitting device units, barrier ribs partitioning regions of the sub-pixels, an optical layer and a color conversion layer disposed between the barrier ribs, a plurality of color filter layers disposed on an upper portion of the color conversion layer and an upper portion of the optical layer, and the plurality of color conversion layers. A black matrix partitioning the filter layer, a plurality of microlenses disposed on the upper surfaces of the plurality of color filter layers, and a portion of the plurality of light emitting element parts connecting each light emitting element part as a part of the plurality of light emitting element parts and the barrier rib It may include a common electrode disposed inside and including a metal layer contacting a portion of the light emitting element unit, and a plurality of individual electrodes respectively disposed on opposite surfaces of light emitting surfaces of the plurality of light emitting element units.

According to various embodiments of the present disclosure, as a common electrode including a portion of a plurality of light emitting device units and a metal layer disposed inside the barrier rib and having a substantially lattice shape with respect to the entire area of the display module, each subpixel As the current can be stably applied, the uniformity of the display can be greatly improved.

In addition, the display module according to various embodiments of the present disclosure can increase work efficiency and improve manufacturing precision by not stacking barrier ribs between sub-pixels in a separate process.

1 is a block diagram of a wearable electronic device in a network environment according to various embodiments of the present disclosure.
2 is a schematic diagram for explaining the structure of a wearable electronic device according to an embodiment of the present disclosure.
3 is a cross-sectional view illustrating a pixel structure of a display module according to an exemplary embodiment of the present disclosure.
4 is a diagram illustrating an example in which a barrier rib and a metal layer of a display module according to an embodiment of the present disclosure are formed in a lattice arrangement.
5 is a flowchart schematically illustrating a method of manufacturing a display module according to an embodiment of the present disclosure.
6A to 6L are diagrams illustrating processes of manufacturing a display module according to an embodiment of the present disclosure.
7 is a cross-sectional view illustrating a pixel structure of a display module according to another exemplary embodiment of the present disclosure.
8 is a cross-sectional view illustrating a pixel structure of a display module according to another exemplary embodiment of the present disclosure.
9A to 9D are diagrams illustrating processes of manufacturing a display module according to another embodiment of the present disclosure.
10 is a cross-sectional view illustrating a pixel structure of a display module according to another exemplary embodiment of the present disclosure.
11A to 11D are diagrams illustrating processes of manufacturing a display module according to another embodiment of the present disclosure.
12 is a cross-sectional view illustrating a pixel structure of a display module according to another exemplary embodiment of the present disclosure.

Terms used in the present disclosure will be briefly described, and the present disclosure will be described in detail. In describing the present disclosure, detailed descriptions of related known technologies may be omitted, and redundant descriptions of the same configuration will be omitted as much as possible.

The terms used in the embodiments of the present disclosure have been selected from general terms that are currently widely used as much as possible while considering the functions in the present disclosure, but they may vary according to the intention or precedent of a person skilled in the art, or the emergence of new technologies. . In addition, in a specific case, there is also a term arbitrarily selected by the applicant, and in this case, the meaning will be described in detail in the description of the disclosure. Therefore, terms used in the present disclosure should be defined based on the meaning of the term and the general content of the present disclosure, not simply the name of the term.

Embodiments of the present disclosure may apply various transformations and may have various embodiments, and specific embodiments are illustrated in the drawings and described in detail in the detailed description. However, this is not intended to limit the scope to specific embodiments, and should be understood to include all transformations, equivalents, and substitutes included in the spirit and scope of technology disclosed. In describing the embodiments, if it is determined that a detailed description of a related known technology may obscure the subject matter, the detailed description will be omitted.

Terms such as first, second, and third may be used to describe various components, but the components should not be limited by the terms. The terms may only be used for the purpose of distinguishing one component from another. For example, a first element may be termed a second element, and similarly, a second element may be termed a first element, without departing from the scope of the present disclosure.

Expressions in the singular number include plural expressions unless the context clearly dictates otherwise. In this application, terms such as “comprise” or “consist of” are intended to indicate that there is a feature, number, step, operation, component, part, or combination thereof described in the specification, but one or more other It should be understood that the presence or addition of features, numbers, steps, operations, components, parts, or combinations thereof is not precluded.

In the present disclosure, a “module” or “unit” performs at least one function or operation, and may be implemented in hardware or software or a combination of hardware and software. In addition, multiple "modules" or multiple "units" may be integrated into at least one module and implemented by at least one processor, except for "modules" or "units" that need to be implemented with specific hardware.

Hereinafter, with reference to the accompanying drawings, embodiments of the present disclosure will be described in detail so that those skilled in the art can easily carry out the present disclosure. However, the present disclosure may be implemented in many different forms and is not limited to the embodiments described herein. And in order to clearly describe the present disclosure in the drawings, parts irrelevant to the description are omitted, and similar reference numerals are assigned to similar parts throughout the specification.

Furthermore, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings and the contents described in the accompanying drawings, but the present disclosure is not limited or limited by the embodiments.

Hereinafter, a wearable electronic device according to various embodiments of the present disclosure will be described in detail with reference to drawings.

1 is a block diagram of a wearable electronic device in a network environment according to various embodiments of the present disclosure. For reference, hereinafter, devices according to various embodiments of the present disclosure are collectively referred to as 'electronic devices' for convenience of description, but devices of various embodiments include electronic devices, wireless communication devices, display devices, or portable communication devices. can be

Referring to FIG. 1 , in a network environment 100, a wearable electronic device 101 communicates with an electronic device 102 through a first network 188 (eg, a short-range wireless communication network) or a second network 189 ) (eg, a long-distance wireless communication network) may communicate with at least one of the electronic device 104 or the server 108 . According to an embodiment, the wearable electronic device 101 may communicate with the electronic device 104 through the server 108 . According to an embodiment, the wearable electronic device 101 includes a processor 120, a memory 130, an input module 150, an audio output module 155, a display module 160, an audio module 171, and a sensor module. (172), haptic module 173, camera module 174, battery 175, power management module 176, interface 177, connection terminal 178, communication module 180, subscriber identification module 186 ), or the antenna module 187.

In some embodiments, in the wearable electronic device 101, at least one of these components (eg, the connection terminal 178) may be omitted or one or more other components may be added. In some embodiments, some of these components (eg, sensor module 172, camera module 174, or antenna module 187) are integrated into a single component (eg, display module 160). It can be.

According to an embodiment, the wearable electronic device 101 may display various images. Here, the image is a concept including still images and moving images, and the wearable electronic device 101 may display various images such as broadcast content and multimedia content. Also, the wearable electronic device 101 may display a user interface (UI) and icons. For example, the display module 160 may include a display driver IC (not shown) and display an image based on an image signal received from the processor 120 . For example, the display driver IC may display an image by generating a driving signal for a plurality of subpixels based on an image signal received from the processor 120 and controlling light emission of the plurality of subpixels based on the driving signal. .

According to an embodiment, the processor 120 may control overall operations of the wearable electronic device 101 . Processor 120 may consist of one or multiple processors. For example, the processor 120 may perform the operation of the wearable electronic device 101 according to various embodiments of the present disclosure by executing at least one instruction stored in a memory.

According to an embodiment, the processor 120 may include a digital signal processor (DSP) for processing digital image signals, a microprocessor, a graphics processing unit (GPU), an artificial intelligence (AI) processor, and an NPU. (neural processing unit) or TCON (time controller). However, it is not limited thereto, and a central processing unit (CPU), a micro controller unit (MCU), a micro processing unit (MPU), a controller, an application processor (AP), or It may include one or more of a communication processor (CP) and an ARM processor, or may be defined by the term. In addition, the processor 120 may be implemented in the form of a system on chip (SoC) or large scale integration (LSI) in which a processing algorithm is embedded, or may be implemented in the form of an application specific integrated circuit (ASIC) or a field programmable gate array (FPGA). may be

According to an embodiment, the processor 120 may control hardware or software components connected to the processor 120 by driving an operating system or an application program, and may perform various data processing and operations. Also, the processor 120 may load and process commands or data received from at least one of the other components into a volatile memory, and store various data in a non-volatile memory.

According to an embodiment, the processor 120 executes software (eg, the program 140) to perform at least one other component (eg, hardware or software component) of the wearable electronic device 101 connected to the processor 120. ), and can perform various data processing or calculations. According to one embodiment, as at least part of data processing or calculation, the processor 120 transfers commands or data received from other components (eg, sensor module 172 or communication module 180) to volatile memory 132. , processing commands or data stored in the volatile memory 132 , and storing resultant data in the non-volatile memory 134 . According to an embodiment, the processor 120 may include a main processor 121 (eg, a central processing unit or an application processor) or a secondary processor 123 (eg, a graphic processing unit, a neural network processing unit ( NPU: neural processing unit (NPU), image signal processor, sensor hub processor, or communication processor). For example, when the wearable electronic device 101 includes the main processor 121 and the auxiliary processor 123, the auxiliary processor 123 uses less power than the main processor 121 or is set to be specialized for a designated function It can be. The secondary processor 123 may be implemented separately from or as part of the main processor 121 .

According to one embodiment, the auxiliary processor 123 may take the place of the main processor 121 while the main processor 121 is in an inactive (eg, sleep) state, or the main processor 121 may be active (eg, an application At least one of the components of the electronic device 101 (eg, the display module 160, the sensor module 172, or the communication module 180) together with the main processor 121 while in the execution state. ) It is possible to control at least some of the related functions or states. According to one embodiment, the auxiliary processor 123 (eg, an image signal processor or a communication processor) may be implemented as part of other functionally related components (eg, the camera module 174 or the communication module 180). there is. According to an embodiment, the auxiliary processor 123 (eg, a neural network processing device) may include a hardware structure specialized for processing an artificial intelligence model. AI models can be created through machine learning. Such learning may be performed, for example, in the electronic device 101 itself where the artificial intelligence model is performed, or may be performed through a separate server (eg, the server 108). The learning algorithm may include, for example, supervised learning, unsupervised learning, semi-supervised learning or reinforcement learning, but the foregoing example not limited to An artificial intelligence model may include a plurality of artificial neural network layers. Artificial neural networks include deep neural networks (DNNs), convolutional neural networks (CNNs), recurrent neural networks (RNNs), restricted boltzmann machines (RBMs), deep belief networks (DBNs), bidirectional recurrent deep neural networks (BRDNNs), It may be one of deep Q-networks or a combination of two or more of the foregoing, but is not limited to the foregoing examples. The artificial intelligence model may include, in addition or alternatively, software structures in addition to hardware structures.

According to an embodiment, the memory 130 may store various data used by at least one component (eg, the processor 120 or the sensor module 172) of the wearable electronic device 101 . The data may include, for example, input data or output data for software (eg, program 140) and commands related thereto. The memory 130 may include volatile memory 132 or non-volatile memory 134 .

According to one embodiment, the processor 120 may be stored as software in the memory 130, and may include, for example, an operating system 142, middleware 144, or an application 146.

According to an embodiment, the input module 150 receives a command or data to be used in a component (eg, the processor 120) of the wearable electronic device 101 from an outside of the wearable electronic device 101 (eg, a user) can do. The input module 150 may include, for example, a microphone, a dome switch, a touch pad (contact capacitance method, pressure resistive film method, infrared sensing method, surface ultrasonic conduction method, integral tension measurement method, A piezo effect method, etc.) may be further provided, but is not limited thereto.

According to an embodiment, the sound output module 155 may output sound signals to the outside of the wearable electronic device 101 . The sound output module 155 may include, for example, a speaker or a receiver. The speaker can be used for general purposes such as multimedia playback or recording playback. A receiver may be used to receive an incoming call. According to one embodiment, the receiver may be implemented separately from the speaker or as part of it.

According to an embodiment, the display module 160 may visually provide information to the outside of the wearable electronic device 101 (eg, a user). The display module 160 may include, for example, a display, a hologram device, or a projector and a control circuit for controlling the device.

According to an embodiment, the audio module 170 may convert sound into an electrical signal or vice versa. According to an embodiment, the audio module 170 acquires sound through the input module 150, the sound output module 155, or an external electronic device connected directly or wirelessly to the wearable electronic device 101 (eg : Sound may be output through the electronic device 102) (eg, a speaker or a headphone).

According to an embodiment, the sensor module 172 detects an operating state (eg, power or temperature) or an external environmental state (eg, a user state) of the wearable electronic device 101, and responds to the detected state. It can generate electrical signals or data values. According to an embodiment, the sensor module 172 may include, for example, a terrestrial magnetic sensor, an acceleration sensor, a position sensor, and a gyroscope sensor. In addition, sensors for detecting bio-signals of the user, such as ECG (ELECTROCARDIOGRAPHY), GSR (GALVANIC SKIN REFLEX), and pulse waves, may be provided. In addition, a temperature sensor, a humidity sensor, an infrared sensor, an air pressure sensor, a proximity sensor, a magnetic sensor, a grip sensor, a color sensor, an illuminance sensor, and the like may be further included, but are not limited thereto.

According to an embodiment, the haptic module 173 may convert an electrical signal into a mechanical stimulus (eg, vibration or movement) or an electrical stimulus that a user can perceive through a tactile or kinesthetic sense. According to one embodiment, the haptic module 173 may include, for example, a motor, a piezoelectric element, or an electrical stimulation device.

According to an embodiment, the camera module 174 may capture still images and moving images. According to one embodiment, the camera module 174 may include one or more lenses, image sensors, image signal processors, or flashes.

According to an embodiment, the power management module 175 may manage power supplied to the wearable electronic device 101 . According to one embodiment, the power management module 175 may be implemented as at least a part of a power management integrated circuit (PMIC).

According to an embodiment, the battery 176 may supply power to at least one component of the electronic device 101 . According to one embodiment, the battery 176 may include, for example, a non-rechargeable primary battery, a rechargeable secondary battery, or a fuel cell.

According to an embodiment, the interface 177 may support one or more designated protocols that may be used to directly or wirelessly connect the wearable electronic device 101 to an external electronic device (eg, the electronic device 102).

According to an embodiment, the connection terminal 178 may include a connector through which the wearable electronic device 101 may be physically connected to an external electronic device (eg, the electronic device 102).

According to an embodiment, the communication module 180 directly (eg, wired communication) between the wearable electronic device 101 and an external electronic device (eg, the electronic device 102, the electronic device 104, or the server 108). Establishment of a communication channel or wireless communication channel, and communication through the established communication channel may be supported. The communication module 180 may include one or more communication processors that operate independently of the processor 120 (eg, an application processor) and support direct (eg, wired) communication or wireless communication. According to one embodiment, the communication module 180 is a wireless communication module 182 (eg, a cellular communication module, a short-range wireless communication module, or a global navigation satellite system (GNSS) communication module) or a wired communication module 184 (eg, : a local area network (LAN) communication module or a power line communication module). Among these communication modules, the corresponding communication module is a first network 188 (eg, a short-range communication network such as Bluetooth, wireless fidelity (WiFi) direct, or infrared data association (IrDA)) or a second network 189 (eg, a legacy communication module). It may communicate with the external electronic device 104 through a cellular network, a 5G network, a next-generation communication network, the Internet, or a telecommunications network such as a computer network (eg, a LAN or a WAN). These various types of communication modules may be integrated into one component (eg, a single chip) or implemented by a plurality of components (eg, multiple chips) separate from each other. The wireless communication module 182 uses subscriber information (eg, International Mobile Subscriber Identifier (IMSI)) stored in the subscriber identification module 186 within a communication network such as the first network 188 or the second network 189. The wearable electronic device 101 may be identified or authenticated.

According to an embodiment, the wireless communication module 182 may support a 5G network after a 4G network and a next-generation communication technology, for example, NR access technology (new radio access technology). NR access technologies include high-speed transmission of high-capacity data (enhanced mobile broadband (eMBB)), minimization of terminal power and access of multiple terminals (massive machine type communications (mMTC)), or high reliability and low latency (ultra-reliable and low latency (URLLC)). -latency communications)) can be supported. The wireless communication module 182 may support a high frequency band (eg, mmWave band) to achieve a high data rate, for example. The wireless communication module 182 uses various technologies for securing performance in a high frequency band, such as beamforming, massive multiple-input and multiple-output (MIMO), and full-dimensional multiplexing. Technologies such as input/output (FD-MIMO: full dimensional MIMO), array antenna, analog beam-forming, or large scale antenna may be supported. The wireless communication module 182 may support various requirements defined for the wearable electronic device 101, an external electronic device (eg, the electronic device 104), or a network system (eg, the second network 189). According to one embodiment, the wireless communication module 182 is a peak data rate for realizing eMBB (eg, 20 Gbps or more), a loss coverage for realizing mMTC (eg, 164 dB or less), or a U-plane latency for realizing URLLC (eg, Example: downlink (DL) and uplink (UL) each of 0.5 ms or less, or round trip 1 ms or less) may be supported.

According to an embodiment, the antenna module 187 may transmit or receive signals or power to the outside (eg, an external electronic device). According to an embodiment, the antenna module 187 may include a plurality of antennas (eg, an array antenna), and a communication method used in a communication network such as the first network 188 or the second network 189 At least one antenna suitable for may be selected from the plurality of antennas by, for example, communication module 180 .

According to one embodiment, the antenna module 187 may include a plurality of antennas (eg, an array antenna), and according to another embodiment, the antenna module 187 is formed on a substrate (eg, a PCB). An antenna including a radiator made of a conductor or a conductive pattern may be included.

According to one embodiment, the antenna module 187 may form a mmWave antenna module. According to one embodiment, the mmWave antenna module includes a printed circuit board, an RFIC disposed on or adjacent to a first surface (eg, a lower surface) of the printed circuit board and capable of supporting a designated high frequency band (eg, mmWave band); and a plurality of antennas (eg, array antennas) disposed on or adjacent to a second surface (eg, a top surface or a side surface) of the printed circuit board and capable of transmitting or receiving signals of the designated high frequency band. there is.

A signal or power may be transmitted or received between the communication module 180 and an external electronic device through at least one antenna. According to some embodiments, other components (eg, a radio frequency integrated circuit (RFIC)) may be additionally formed as a part of the antenna module 187 in addition to the radiator.

At least some of the components are connected to each other through a communication method between peripheral devices (eg, a bus, general purpose input and output (GPIO), serial peripheral interface (SPI), or mobile industry processor interface (MIPI)) and signal (e.g. commands or data) can be exchanged with each other.

Commands or data may be transmitted or received between the wearable electronic device 101 and the external electronic device 104 through the server 108 connected to the second network 189 . Each of the external electronic devices 102 or 104 may be the same as or different from the wearable electronic device 101 . According to an embodiment, all or part of operations executed in the wearable electronic device 101 may be executed in one or more external electronic devices among the external electronic devices 102 , 104 , or 108 . For example, when the wearable electronic device 101 needs to perform a certain function or service automatically or in response to a request from a user or other device, the wearable electronic device 101 executes the function or service by itself. Instead of or additionally, one or more external electronic devices may be requested to perform the function or at least part of the service. One or more external electronic devices receiving the request may execute at least a part of the requested function or service or an additional function or service related to the request, and deliver the execution result to the wearable electronic device 101 . The wearable electronic device 101 may provide the result as at least part of a response to the request as it is or additionally processed. To this end, for example, cloud computing, distributed computing, mobile edge computing (MEC), or client-server computing technology may be used. The wearable electronic device 101 may provide an ultra-low latency service using, for example, distributed computing or mobile edge computing. In another embodiment, the external electronic device 104 may include an internet of things (IoT) device. Server 108 may be an intelligent server using machine learning and/or neural networks. According to an embodiment, the external electronic device 104 or server 108 may be included in the second network 189 . The wearable electronic device 101 may be applied to intelligent services (eg, smart home, smart city, smart car, or health care) based on 5G communication technology and IoT-related technology.

2 is a schematic diagram for explaining the structure of a wearable electronic device according to an embodiment of the present disclosure.

Referring to FIG. 2 , the wearable electronic device 101 according to an embodiment includes a display module 160 and a projection lens 110 into which light emitted from a plurality of light emitting devices mounted on the display module 160 is incident, and , a diffractive optical member 111 into which light collected by the projection lens 110 is incident.

According to an embodiment, the light emitted from the display module 160 is condensed through a micro lens 390 (see FIG. 3) to be described later and then enters the projection lens 110. Light incident to the projection lens 110 may be projected to the user's eyes through the diffractive optical member 111 .

According to an embodiment, the size of the display module 160 may be equal to or smaller than that of the light incident surface of the projection lens 110 . Light emitted from the plurality of light emitting devices of the display module 160 is incident into the projection lens 110 through the light incident surface of the projection lens 110 .

According to an embodiment, the diffractive optical member 111 may be formed of, for example, a light guide made of a transparent material (eg, glass). A first diffraction grating 113 and a second diffraction grating 115 may be disposed on one side and the other side of the diffractive optical member 111, respectively. The first diffraction grating 113 may be disposed to correspond to the emission surface of the projection lens 110 and may cause light emitted from the emission surface of the projection lens 110 to enter the diffractive optical member 111 . The second diffraction grating 115 emits light passing through the inside of the diffractive optical member 111 to the outside of the diffractive optical member 111 . The second diffraction grating 115 may be disposed at a position where light is emitted toward the user's eyes 117 in a state where the wearable electronic device 101 is worn on the user's head.

According to an embodiment, the sub-pixel structure 200 (see FIG. 3) included in the display module 160 of the present disclosure does not spread light emitted from the light emitting elements 315a, 315b, and 315c (see FIG. 3). It can be focused on the front. For example, most of the light emitted from each sub-pixel structure 200 of the display module 160 may be concentrated onto the incident surface of the projection lens 110 without leaving the incident surface of the projection lens 110 .

FIG. 3 is a cross-sectional view illustrating a pixel structure of a display module according to an exemplary embodiment, and FIG. 4 is a diagram illustrating an example in which barrier ribs and a metal layer of the display module according to an exemplary embodiment are configured in a lattice arrangement.

Referring to FIG. 3 , a display module 160 according to an embodiment of the present disclosure includes a substrate 370, a plurality of subpixels 201, 202, and 203 arranged on the substrate, and each subpixel 201 , 202, 203 may include a micro lens 390 for projecting the light emitted from the projection lens 110 to the light incident surface.

According to one embodiment, the substrate 370 may be made of a transparent glass material (main component is SiO ₂ ). However, it is not limited thereto and may be formed of a transparent or translucent polymer. In this case, the polymer may be an insulating organic material such as polyether sulfone (PES), polyimide (PI), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), or polycarbonate (PC).

According to an embodiment, the substrate 370 is provided with a plurality of thin film transistors (TFTs). In the present disclosure, the TFT is not limited to a specific structure or type. For example, the TFT cited in the present disclosure includes a-Si (amorphous silicon) TFT, LTPS (low temperature polycrystalline silicon) TFT, LTPO (low temperature polycrystalline oxide) It may include a substrate that can be implemented in the form of a TFT, a hybrid oxide and polycrystalline silicon (HOP) TFT, a liquid crystalline polymer (LCP) TFT, an organic TFT (OTFT), or a graphene TFT.

According to an embodiment, the substrate 370 may have a plurality of substrate electrode pads 371 electrically connected to individual electrodes 320 of the light emitting device units 315a, 315b, and 315c to be described later. The plurality of substrate electrode pads 371 may be electrically connected to the plurality of TFT circuits provided on the substrate 370 .

According to an embodiment, one pixel 200 may include a plurality of sub-pixels 201, 202, and 203 emitting light of different colors. Here, member number 201 may be a subpixel emitting blue light, member number 202 may be a subpixel emitting red light, and member number 203 may be a subpixel emitting green light. Hereinafter, for convenience of description, the plurality of subpixels 201 , 202 , and 203 may be referred to as a first subpixel 201 , a second subpixel 202 , and a third subpixel 203 , respectively.

According to an embodiment, the first subpixel 201 includes the first light emitting device unit 315a, the second subpixel 202 includes the second light emitting device unit 315b, and the third subpixel 203 may include a third light emitting element unit 315c. For example, the first subpixel 201 may emit light in a blue wavelength band, the second subpixel 202 may emit light in a red wavelength band, and the third subpixel 203 may emit light in a red wavelength band. Light in a green wavelength band may be emitted.

According to an embodiment, all of the first to third light emitting device units 315a, 315b, and 315c may emit light of the same color (eg, blue light). The first to third light emitting device portions 315a, 315b, and 315c may have the same structure, and only the structure of the first light emitting device portion 315a will be described below.

According to an embodiment, the first light emitting device unit 315a is disposed between the first semiconductor layer 311, the second semiconductor layer 314, and the first semiconductor layer 311 and the second semiconductor layer 314. An active layer 313 may be included.

According to an embodiment, the first semiconductor layer 311, the active layer 313, and the second semiconductor layer 314 are formed by metal organic chemical vapor deposition (MOCVD) or chemical vapor deposition (CVD). , or plasma-enhanced chemical vapor deposition (PECVD).

According to an embodiment, the first semiconductor layer 311 may include, for example, an n-type semiconductor layer (cathode, cathode). The n-type semiconductor layer may be selected from, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, or AlInN, and may be doped with an n-type dopant such as Si, Ge, or Sn.

According to an embodiment, the second semiconductor layer 314 may include, for example, a p-type semiconductor layer (anode, oxide electrode). The p-type semiconductor layer may be selected from, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, or AlInN, and may be doped with a p-type dopant such as Mg, Zn, Ca, Sr, or Ba.

On the other hand, the first light emitting element unit 315a is not limited to the above configuration, and for example, the first semiconductor layer 311 includes a p-type semiconductor layer, and the second semiconductor layer 314 includes an n-type semiconductor layer. may also include

According to an embodiment, the active layer 313 is a region in which electrons and holes are recombinated, and as the electrons and holes recombine, the active layer 313 transitions to a lower energy level and can generate light having a wavelength corresponding thereto. The active layer 313 may include a semiconductor material, for example, amorphous silicon or polycrystalline silicon. However, the present embodiment is not limited thereto, and may contain an organic semiconductor material, and may have a single quantum well (SQW) structure or a multi quantum well (MQW) structure.

According to an embodiment, the first to third light emitting device units 315a, 315b, and 315c may be, for example, inorganic light emitting devices and may be micro light emitting diodes (LEDs) having a size of about 50 μm or less. In this case, the first to third light emitting device parts 315a, 315b, and 315c may be of a vertical type in which a common electrode 323 is disposed on the light emitting surface and individual electrodes 320 are respectively disposed on the opposite surface of the light emitting surface. can Here, the common electrode 323 may be a positive electrode, and the individual electrode 320 may be a negative electrode.

According to an embodiment, the common electrode 323 may be integrally formed on a portion constituting the light emitting surfaces of the first to third light emitting device portions 315a, 315b, and 315c. For example, the common electrode 323 may be an upper portion of the first semiconductor layer 311 of the first to third light emitting device portions 315a, 315b, and 315c. Accordingly, the common electrode 323 may electrically and physically connect the adjacent first to third light emitting device portions 315a, 315b, and 315c.

According to an embodiment, the common electrode 323 is made of a semiconductor material forming a part of the first semiconductor layer 311 . Therefore, the common electrode 323 may have relatively high electrical resistance compared to metal. Each sub-pixel receives current through the common electrode 323, and a voltage drop (IR Drop) phenomenon may occur due to a resistance difference according to a sub-pixel position on the display module 160. This may cause a difference in luminance between sub-pixels to deteriorate display uniformity. In an embodiment of the present disclosure, the common electrode 323 is disposed inside the barrier rib 312 as shown in FIG. 4 and may include a metal layer 340 having a substantially lattice shape with respect to the entire area of the display module 160 . As the common electrode 323 includes the metal layer 340 , electrical conductivity may be increased. Therefore, since each sub-pixel of the display module 160 can receive a required amount of current evenly through the common electrode 323 including the metal layer 340, the electrical resistance of each sub-pixel is reduced to improve display uniformity. can be greatly improved.

According to an embodiment, the barrier rib 312 disposed inside the metal layer 340 may be integrally formed with the first semiconductor layer 311 of the light emitting device units 315a, 315b, and 315c. For example, the barrier rib 312 is not formed of a material different from that of the light emitting device portions 315a, 315b, and 315c but is formed of the same material as the first semiconductor layer 311 constituting the light emitting device portions 315a, 315b, and 315c. It can be. In this case, in the process of forming the light emitting device portions 315a, 315b, and 315c, the remaining portion except for the portion used as the first semiconductor layer 311 among the regions used as the first semiconductor layer 311 is subjected to an etching process. A barrier rib 312 may be formed. Accordingly, according to an exemplary embodiment of the present disclosure, a separate process for forming the barrier rib 312 may be omitted apart from a process for forming the light emitting device portions 315a, 315b, and 315c. In addition, according to an exemplary embodiment of the present disclosure, the common electrode 323 as well as the barrier rib 312 uses a portion of the first semiconductor layer 311 of the light emitting device portions 315a, 315b, and 315c, so that the common electrode 323 ) It is possible to omit a separate process for forming. Therefore, in the present disclosure, as a high resolution is required, a small or subminiature display (eg, an augmented reality (AR) wearable device requiring high resolution in a small size) in which the density of subpixels increases and the size decreases display), it is possible to increase work efficiency and reduce manufacturing time and manufacturing cost by reducing the number of processes because barrier ribs are not stacked between subpixels in a separate process.

According to an embodiment, the metal layer 340 may serve as the common electrode 323 and reflect light directed to adjacent subpixels. As the light emitted from the light emitting surface of the first light emitting element unit 315a is reflected by the metal layer 340 without being incident to each adjacent subpixel, color interference between each subpixel (this can be referred to as crosstalk) is prevented. It can be prevented. Alternatively, the metal layer 340 may be made of a metal material having a high light absorption rate. In this case, color interference between subpixels can be prevented by absorbing light emitted from the light emitting surface of the first light emitting device unit 315a. .

According to one embodiment, the individual electrodes 320 may be made of Au or an alloy containing Au, but is not limited thereto.

Although not shown in the drawing, according to various embodiments, the light emitting device applied to the substrate 370 is not limited to an inorganic light emitting device and may be an organic light emitting diode (OLED).

According to an embodiment, the first to third light emitting device units 315a, 315b, and 315c may be disposed on the substrate 370 in a grid arrangement. However, the arrangement of the first to third light emitting device parts 315a, 315b, and 315c on the substrate 370 is not necessarily limited to the lattice arrangement. For example, a plurality of light emitting devices may be arranged in a pentile RGBG manner. The pentile RGBG method is a method of arranging the number of red, green, and blue sub-pixels at a ratio of 1:2:1 (RGBG) by using the characteristic that humans distinguish blue less and green the best. . The pen tile RGBG method is effective because it can increase yield, lower unit cost, and realize high resolution on a small surface.

According to an embodiment, since the first sub-pixel 201 uses the blue light emitted from the first light emitting device unit 315a without converting it, the first and second color conversion layers 382 and 383 are used instead of the color conversion layer. ) may include an optical layer 381 having a height corresponding to . The optical layer 381 may be formed of a transparent material that does not affect or minimizes the transmittance, reflectance, and refractive index of light emitted from the first light emitting device unit 315a. Alternatively, the optical layer 381 directs the emission direction of light toward the opening of the cell formed by the barrier rib 312 through refraction and reflection, thereby minimizing wasted light and improving luminance. A material such as an optical film material is adopted. can do.

According to an embodiment, the first sub-pixel 201 may have a structure in which a first color filter layer 384 is further added on top of the optical layer 381 . The first color filter layer 384 may be an organic material containing dyes or pigments. In this case, the first color filter layer 384 may filter a different wavelength from the wavelength of light emitted from the first light emitting device unit 315a.

According to an embodiment, the second subpixel 202 may include a first color conversion layer 382 capable of emitting red light by exciting blue light emitted from the second light emitting device unit 315b. . For example, the first color conversion layer 382 may be made of a photosensitive resin including phosphors or quantum dots. For example, the phosphor or quantum dot may absorb incident light from the second light emitting device unit 315b and isotropically emit light having a wavelength different from that of the incident light. The photosensitive resin may be made of a material having light transmission, and may be made of, for example, silicone resin, epoxy resin, acrylate, siloxane, or a light-transmitting organic material. Each of the plurality of quantum dots included in the first color conversion layer 382 may function as a point light source and increase the amount of light to a greater extent.

According to an embodiment, the second sub-pixel 202 may have a structure in which a second color filter layer 385 is further added on top of the first color conversion layer 382 . The second color filter layer 385 may be an organic material containing dyes or pigments. In this case, the second color filter layer 385 may block leakage light that is not completely converted by the first color conversion layer 382 .

According to an embodiment, the third subpixel 203 may include a second color conversion layer 383 capable of emitting green light by exciting blue light emitted from the third light emitting device unit 315c. . Like the first color conversion layer 382, the second color conversion layer 383 may be made of a photosensitive resin including a phosphor or quantum dots.

According to an embodiment, the third sub-pixel 203 may have a structure in which a third color filter layer 386 is further added on top of the second color conversion layer 383 . The third color filter layer 386 may be an organic material containing dyes or pigments. In this case, the third color filter layer 386 may block leakage light that is not completely converted by the second color conversion layer 382 .

According to an embodiment, the first color filter layer 384 , the second color filter layer 385 , and the third color filter layer 386 may be partitioned by the black matrix 387 . As the black matrix 387 is disposed substantially along the upper portion of the barrier rib 312 , it may be formed in a substantially lattice shape.

According to an embodiment, the black matrix 387 absorbs external light to solve a problem caused by reflection of external light, thereby improving a contrast ratio and black luminous feeling of a display and improving outdoor visibility. In addition, the black matrix 387 can improve the color gamut of the display by preventing light of different colors emitted from adjacent light emitting devices from being mixed.

According to an embodiment, a plurality of micro lenses 390 may be disposed on top of each sub-pixel 201 , 202 , and 230 . For example, in the first sub-pixel 201, the micro lens 390 is disposed on the first color filter layer 384, and in the second sub-pixel 202, the micro lens 390 is disposed on the second color filter layer 385. A lens 390 may be disposed, and in the third sub-pixel 203 , a micro lens 390 may be disposed on the third color filter layer 386 .

According to an embodiment, the plurality of micro lenses 390 may be included in a micro lens array formed in the form of a thin film sheet, for example. In this case, the pitch between the plurality of micro lenses 390 may be set to be substantially the same as the pitch between the plurality of subpixels 201 , 202 , and 203 provided in the display module 160 . Accordingly, as described above, each of the plurality of micro lenses 390 may be disposed to correspond to one sub-pixel. In this case, the plurality of micro lenses 390 may all have the same focal length. However, it is not limited thereto, and the plurality of micro lenses 390 may have different focal lengths for each area, such as a central area and an edge area of the micro lens array.

According to an embodiment, the micro lens array is manufactured in the form of a sheet as described above and then attached to the first color filter layer 384, the second color filter layer 385, and the third color filter layer 386 by a laminating method. can do. In this case, the micro lens array may cover a part of the black matrix 387 .

However, the micro lens array is not limited thereto and may be manufactured in various ways. For example, the microlens array may be formed using a high temperature reflow method, a grayscale mask photolithography method, a molding/imprinting method, or a dry etching pattern transfer method. ) can be formed in a variety of ways, such as

In the high-temperature reflow method, an optical layer made of a photosensitive polymer is laminated on the first color filter layer 384, the second color filter layer 385, the third color filter layer 386, and the black matrix 387, and the optical layers are respectively When cells corresponding to the microlenses are formed and the optical layer is heated for a predetermined time, the optical layer melts into a liquid state and forms a plurality of microlenses having a predetermined curvature by surface tension. In this case, the planarization layer may be made of an optical material or an optical adhesive. The planarization layer is a material that is cured in response to light (eg, ultraviolet light) of a designated band, and may include, for example, optical clear adhesive (OCA), optical clear resin (OCR), or super view resin (SVR). there is. Alternatively, the planarization layer may include a material capable of maintaining high transparency even in a high temperature or high humidity environment.

In the gray scale mask photolithography method, an optical layer made of a photosensitive polymer is laminated on a first color filter layer 384, a second color filter layer 385, a third color filter layer 386, and a black matrix 387 as a mask, This is a method in which the upper surface of the optical layer is formed into a plurality of micro lenses by exposing and developing the optical layer.

In the molding/imprinting method, an optical layer made of a photosensitive polymer is laminated on the first color filter layer 384, the second color filter layer 385, the third color filter layer 386, and the black matrix 387, and a stamp is applied in a predetermined manner. It is a method of molding the upper surface into a plurality of micro lenses by pressing the optical layer under a temperature. In this case, the stamp may have dome-shaped grooves corresponding to the plurality of microlenses to be formed on the optical layer.

In the dry pattern transfer method, an optical layer made of a photosensitive polymer is laminated on the first color filter layer 384, the second color filter layer 385, the third color filter layer 386, and the black matrix 387, and plasma etching is performed. It is a method of molding with multiple micro lenses.

Before forming the plurality of micro lenses 390 by the above-described various methods, the positions where the plurality of micro lenses 390 are to be formed are the light emitting element parts 315a, 315b, and 315c corresponding to each micro lens 390. ) may be preceded by a process of aligning with the position of.

Hereinafter, a method of manufacturing a display module according to an embodiment of the present disclosure will be sequentially described with reference to the drawings.

5 is a flowchart schematically illustrating a method of manufacturing a display module according to an embodiment of the present disclosure, and FIGS. 6A to 6L are views illustrating processes of manufacturing a display module according to an embodiment of the present disclosure.

Referring to FIG. 6A , the first semiconductor layer 311 , the active layer 313 , and the second semiconductor layer 314 may be sequentially epitaxially grown on the growth substrate 300 (51). In this case, the material of the growth substrate 300 may be silicon or sapphire.

According to an embodiment, the first semiconductor layer 311, the active layer 313, and the second semiconductor layer 314 are formed by metal organic chemical vapor deposition (MOCVD) or chemical vapor deposition (CVD). , or may be sequentially formed on the growth substrate 300 using a method such as plasma-enhanced chemical vapor deposition (PECVD).

According to an embodiment, the first semiconductor layer 311 may include, for example, an n-type semiconductor layer (cathode, cathode). The n-type semiconductor layer may be selected from, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, or AlInN, and may be doped with an n-type dopant such as Si, Ge, or Sn. According to an embodiment, the second semiconductor layer 314 may include, for example, a p-type semiconductor layer (anode, oxide electrode). The p-type semiconductor layer may be selected from, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, or AlInN, and may be doped with a p-type dopant such as Mg, Zn, Ca, Sr, or Ba. According to an embodiment, the active layer 313 is a region in which electrons and holes are recombinated, and as the electrons and holes recombine, the active layer 313 transitions to a lower energy level and can generate light having a wavelength corresponding thereto. The active layer 313 may include a semiconductor material, for example, amorphous silicon or polycrystalline silicon. However, the present embodiment is not limited thereto, and may contain an organic semiconductor material or the like, and may have a single quantum well (SQW) structure or a multi quantum well (MQW) structure.

According to an embodiment, the first semiconductor layer 311, the active layer 313, and the second semiconductor layer 314 may form a light emitting device unit.

According to an embodiment, after epitaxial growth, an electrode layer 320a to be used as an individual electrode of each light emitting element unit may be deposited on the second semiconductor layer 314 to a predetermined thickness through a process such as sputtering.

Referring to FIG. 6B , the first semiconductor layer 311, the active layer 313, the second semiconductor layer 314, and the electrode layer 320a are formed by repeatedly performing a photolithography process and an etching process, respectively. 315b, 315c) an isolation process is performed (52). In this case, predetermined spaces 330 may be formed between the respective light emitting device units 315a, 315b, and 315c.

Referring to FIG. 6C , a plurality of trenches 331 having a predetermined depth may be formed in the first semiconductor layer 311 exposed by the spaces 330 . The depth of the plurality of trenches 331 may determine the height of the metal layer 340 formed through a post process. For example, when the trench 331 is formed to a substantially middle height of the first semiconductor layer 311 as shown in FIG. 6C , the trench 331 may have a height lower than the height of the barrier rib 312 formed in a later process. Alternatively, when the trench 331 is formed to the lower end of the first semiconductor layer 311 , it may have substantially the same height as the height of the barrier rib 312 .

Referring to FIG. 6D , a plurality of metal layers 340 may be formed by filling the plurality of trenches 331 with a metal material (53). The metal layer 340 may partition each of the light emitting device portions 315a, 315b, and 315c together with a barrier rib while serving as a common electrode 323 . For example, the metal layer 340 may be made of a metal material having high conductivity and high reflectivity. Alternatively, the metal layer 340 may be made of a metal material having high conductivity and high light absorption. The metal layer 340 may prevent color interference between subpixels by reflecting or absorbing light.

According to an embodiment, a portion of the first semiconductor layer 311 may be used as the common electrode 323 as shown in FIG. 6D. The common electrode 323 may increase conductivity by including the metal layer 340 . Accordingly, since the common electrode 323 can stably apply a required amount of current to each sub-pixel, a voltage drop that may occur due to a difference in resistance depending on the position of the sub-pixel can be prevented, thereby improving display uniformity. .

Referring to FIG. 6E , a passivation layer 350 may be formed to protect each of the light emitting device portions 315a, 315b, and 315c from external environments such as moisture and oxygen. The passivation layer 350 includes the side surfaces of the light emitting device portions 315a, 315b, and 315c, the bottom portion 330a of the space, and a portion 340a of the metal layer 340 positioned substantially on the same plane as the bottom portion 330a. ) can be covered.

In one embodiment, the passivation layer 350 may include an inorganic insulating layer (eg, silicon oxide (SiO 2 )) and/or an organic insulating layer (eg, general purpose polymer (PMMA, PS)). For example, the passivation layer 350 may be formed with a composite stacked structure of an inorganic insulating film and an organic insulating film.

Referring to FIG. 6F, a planarization process may be performed after filling the spaces 351 (see FIG. 6E) located between the light emitting device units 315a, 315b, and 315c with a material such as SiO ₂ (54). . In this case, the surface 361 of the planarization layer 360 may be positioned on substantially the same plane as the surface 321 of the individual electrode 320 .

Referring to FIG. 6G , the growth substrate 300 may be turned over so that the planarized portion faces the substrate 370 having the TFT circuit and bonded to the substrate 370 through a thermal compression bonding process (55). In this case, the individual electrodes 320 may be electrically connected to corresponding substrate electrode pads 371 . In addition, the individual electrodes 320 may be physically connected as they are fused to the substrate electrode pads 371 during the thermal compression process.

Referring to FIG. 6H , the growth substrate 300 may be removed from the first semiconductor layer 311 through a laser lift-off (LLO) process.

Referring to FIG. 6I , barrier ribs 312 may be formed on one surface of the first semiconductor layer 311 from which the growth substrate 300 is removed through a photolithography process and an etching process (56). In this case, the barrier rib 312 may be integrally formed with the first semiconductor layer 311 by being formed on a part of the first semiconductor layer 311 without being formed of a separate material.

According to an embodiment, the barrier rib 312 may be disposed at a position substantially corresponding to the planarization layer 360, and each trench 316 is located above the corresponding light emitting device parts 315a, 315b, and 315c. can do. Each trench may be filled with an optical material or a color conversion material.

According to one embodiment, the metal layer 340 is positioned inside the barrier rib 312 . The barrier rib 312 is formed in a substantially lattice shape as shown in FIG. 4 , and the metal layer 340 located inside the barrier rib 312 may also be formed in a substantially lattice shape.

According to an embodiment, the height h1 of the barrier rib 312 may be greater than the height h2 of the metal layer 340 . However, the height h2 of the metal layer 340 is not limited thereto and may be formed lower than the height shown in FIG. 6i or, conversely, higher. According to an embodiment, the metal layer 340 may have a smaller width than the width of the barrier rib 312 so as to be disposed inside the barrier rib 312 .

According to an embodiment, a reflective film 317 may be deposited on a side surface of the barrier rib 312 . For example, the reflective film 317 may be made of a metal material (eg, aluminum) having high reflectivity. The reflective film 317 may block light emitted from the light emitting device units 315a, 315b, and 315c from being incident to adjacent subpixels. In this case, the lower end of the reflective film 317 is located above the common electrode 323, so that light emitted from the light emitting device parts 315a, 315b, and 315c passes through the common electrode 323 toward the adjacent subpixel. There is a chance to get hired. However, in the present disclosure, since the lower end of the metal layer 340 is disposed at a position lower than the lower end of the reflective film 317 (for example, a position in close contact with the passivation layer 350 on the planarization layer 360), the light emitting element units ( A room for light emitted from 315a, 315b, and 315c to be incident to adjacent subpixels through the common electrode 323 may be eliminated. Accordingly, color interference between adjacent subpixels can be prevented.

Referring to FIG. 6J , an optical layer 381 is formed by filling the trench 316 corresponding to the first light emitting device portion 315a with an optical material, and the second and third light emitting device portions 315b and 315c are respectively Corresponding trenches 316 may be filled with a color conversion material to form first and second color conversion layers 382 and 383 (57).

According to an embodiment, the color conversion material constituting the first color conversion layer 382 and the color conversion material constituting the second color conversion layer 383 excite incident light to emit light of different colors. . Color conversion materials may be in the form of phosphors or quantum dots included in a photosensitive resin.

Referring to FIG. 6K , a thin film encapsulation layer 375 covering the first and second color conversion layers 382 and 383 to protect the first and second color conversion layers 382 and 383 can form In this case, the thin film encapsulation layer 375 may cover not only the first and second color conversion layers 382 and 383 but also the upper surface of the barrier rib 312 and the optical layer 381 .

According to an embodiment, the first color filter layer 384, the second color filter layer 385, the third color filter layer 386, and the black matrix 387 may be formed on the thin film encapsulation layer 375 ( 58). In this case, the first to third color filter layers 384, 385, and 386 may filter different colors. For example, after sequentially forming the first color filter layer 384, the second color filter layer 385, and the third color filter layer 386 on the thin film encapsulation layer 375, the black matrix 387 may be formed. can However, the first color filter layer 384, the second color filter layer 385, the third color filter layer 386, and the black matrix 387 may not necessarily be formed in this order.

According to an embodiment, the first color filter layer 384 may be formed at a position corresponding to the optical layer 381, and have a width greater than that of the optical layer 381 so as to completely cover the optical layer 381. can be formed as The second color filter layer 385 may be formed at a position corresponding to the first color conversion layer 382 and may be wider than the width of the first color conversion layer 382 to completely cover the first color conversion layer 382 . It can be formed with a larger width. The third color filter layer 386 may be formed at a position corresponding to the second color conversion layer 383, and may be wider than the width of the second color conversion layer 383 to completely cover the second color conversion layer 383. It can be formed with a larger width.

The black matrix 387 may be formed substantially along the upper portion of the barrier rib 312 and may isolate the first color filter layer 384 , the second color filter layer 385 , and the third color filter layer 386 .

Referring to FIG. 6L , micro lenses 390 may be formed on the upper surfaces of the first color filter layer 384, the second color filter layer 385, and the third color filter layer 386, respectively (59). For example, the plurality of micro lenses 390 may attach sheets having a plurality of micro lens arrays to the upper surfaces of the first color filter layer 384, the second color filter layer 385, and the third color filter layer 386. there is. However, the plurality of micro lenses 390 may be manufactured in various ways without being limited thereto. For example, the microlens array may be formed using a high temperature reflow method, a grayscale mask photolithography method, a molding/imprinting method, or a dry etching pattern transfer method. ) can be formed in a variety of ways, such as

In one embodiment of the present disclosure, a display module having pixels 200 formed through various processes as described above may be formed. In this case, each of the sub-pixels 201 , 202 , and 203 constituting the pixel 200 may use a portion of the light emitting device portions 315a , 315b , and 315c as a common electrode 323 . In this case, the common electrode 323 including the metal layer 340 disposed inside the barrier rib 312 secures high electrical conductivity, so that required current can be stably applied to each sub-pixel of the display module. Accordingly, since a voltage drop due to a resistance difference according to sub-pixel positions can be minimized, display uniformity can be improved.

Hereinafter, a pixel structure according to various embodiments of the present disclosure will be described, but the same member number as the member number assigned to each component of the pixel 200 will be given to a component substantially the same as the pixel 200 described above, and a corresponding member number will be given. Description may be omitted.

7 is a cross-sectional view illustrating a pixel structure of a display module according to another exemplary embodiment of the present disclosure.

A pixel 200' of a display module according to another embodiment of the present disclosure is substantially the same as the pixel 200 described above, and has a difference in height h3 of the metal layer 340'.

According to an embodiment, an upper end of the metal layer 340' may have the same height as that of the barrier rib 312'. Each of the subpixels 201, 202, and 203 may substantially completely block light emitted from peripheral light emitting devices from being incident to adjacent subpixels by the metal layer 340'. In this case, since the metal layer 340' can replace the reflective film 317 formed on the side surface of the barrier rib 312', the reflective film 317 can be omitted in some cases.

8 is a cross-sectional view illustrating a pixel structure of a display module according to another embodiment of the present disclosure, and FIGS. 9A to 9D are views illustrating processes of manufacturing the display module according to another embodiment of the present disclosure.

Referring to FIG. 8 , in a pixel 200-1 of a display module according to another embodiment of the present disclosure, the structure of each of the sub-pixels 201-1, 202-1, and 203-1 is the pixel 200 described above. Most of them are substantially the same as each of the sub-pixels 201, 202, and 203 of ), and there are some differences.

For example, in each of the subpixels 201-1, 202-1, and 203-1, the first color filter layer 384, the second color filter layer 385, and the third color filter layer 386 form a black matrix 387. ) is different from the respective subpixels 201, 202, and 203.

According to an embodiment, the pixel 200-1 includes the above-mentioned pixels (refer to FIG. 6j) until the process of forming the optical layer 381, the first color conversion layer 382, and the second color conversion layer 383 (see FIG. 6j). 200) may be substantially the same as the manufacturing process. Hereinafter, the manufacturing process of the pixel 200-1 will be described with reference to FIGS. 9A to 9D following the above process (see FIG. 6J).

Referring to FIG. 9A , a black matrix 387-1 may be formed on the upper portion of the barrier rib 312. The black matrix 387-1 may have a width corresponding to that of the barrier rib 312 to substantially completely cover the upper portion of the barrier rib.

Referring to FIG. 9B , in order to protect the first and second color conversion layers 382 and 383, a thin film encapsulation layer 375-1 covering the first and second color conversion layers 382 and 383 may be formed. there is. In this case, the thin film encapsulation layer 375-1 may cover not only the first and second color conversion layers 382 and 383 but also the optical layer 381 and the black matrix 387-1.

According to an embodiment, the thin film encapsulation layer 375-1 may fill a step between the upper surface of the optical layer 381 and the first and second color conversion layers 382 and 383 and the black matrix 387-1. . In this case, the upper surface of the thin film encapsulation layer 375-1 may be planarized through a polishing process.

Referring to FIG. 9C , first to third color filter layers 384, 385, and 386 may be sequentially formed on the thin film encapsulation layer 375-1. For example, the first color filter layer 384 may be disposed at a position corresponding to the optical layer 381 and may have a width greater than that of the optical layer 381 . The second color filter layer 385 may be disposed at a position corresponding to the first color conversion layer 382 and may have a width greater than that of the first color conversion layer 382 . The third color filter layer 386 may be disposed at a position corresponding to the second color conversion layer 383 and may have a width greater than that of the second color conversion layer 383 .

Referring to FIG. 9D , micro lenses 390 may be formed on upper surfaces of the first color filter layer 384, the second color filter layer 385, and the third color filter layer 386, respectively. For example, the plurality of micro lenses 390 may attach sheets having a plurality of micro lens arrays to the upper surfaces of the first color filter layer 384, the second color filter layer 385, and the third color filter layer 386. there is. However, the plurality of micro lenses 390 may be manufactured in various ways without being limited thereto. For example, the microlens array may be used by a high temperature reflow method, a grayscale mask photolithography method, a molding/imprinting method, or a dry etching pattern transfer method. It can be formed in a variety of ways, such as

10 is a cross-sectional view illustrating a pixel structure of a display module according to another embodiment of the present disclosure, and FIGS. 11A to 11D are views illustrating processes of manufacturing the display module according to another embodiment of the present disclosure.

Referring to FIG. 10 , in a pixel 200-2 of a display module according to another embodiment of the present disclosure, the structure of each sub-pixel 201-2, 202-2, and 203-2 is the pixel 200 described above. -1) is substantially the same as each of the sub-pixels 201-1, 202-1, and 203-1, and is different in that a reflective layer 293 is further included below the micro lenses 390.

According to an embodiment, the pixel 200-2 is a thin film encapsulation layer covering the optical layer 381, the first color conversion layer 382, the second color conversion layer 383, and the black matrix 387-1. Up to the process of forming 375-1 (see FIG. 9B), the manufacturing process of the pixel 200 described above may be substantially the same. Hereinafter, the manufacturing process of the pixel 200-2 will be described with reference to FIGS. 11A to 11D following the above process (see FIG. 9B).

Referring to FIGS. 11A and 11B , a reflective layer 293 may be formed on the upper surface of the thin film encapsulation layer 375-1. For example, the reflective layer 293 may include a plurality of openings 295 through which light passes. In this case, each opening 295 may be disposed at a position corresponding to each of the light emitting device portions 315a, 315b, and 315c, and may have a width w2 smaller than the width w1 between the barrier ribs 312. .

According to one embodiment, the opening 295 may be disposed at a position substantially corresponding to the central portion of the light emitting device unit. However, it is not limited thereto and may be disposed at a position not out of the area of the light emitting element unit. For example, an opening corresponding to the light emitting device unit adjacent to the left side of the display module 160 may be disposed to be biased from the center of the light emitting device unit to the right. Alternatively, the opening corresponding to the light emitting device unit adjacent to the right side of the display module 160 may be disposed to be biased from the center of the light emitting device unit to the left. The arrangement of the openings 295 takes into account the condition of minimizing the wasted amount of light emitted from the front of the display module 160 and spreading beyond the edge of the display module 160 and maximizing the amount of light emitted forward. it could be

According to an embodiment, the reflective layer 293 may be made of a material having high light reflectivity. For example, the reflective layer 293 may be a metal layer, a resin layer containing metal oxide, or a distributed bragg reflection layer. The thickness of the reflective layer 293 may be approximately 100 nm to 500 nm. The metal layer may be Al, Au, Ag, Pt, Ni, Cr, Ti, or Cu. The resin layer containing the metal oxide may be a resin layer containing titanium oxide. In the diffuse Bragg reflective layer, a plurality of insulating films having different refractive indices may be repeatedly stacked several to hundreds of times, for example, 2 to 100 times. The insulating layer constituting the dispersed Bragg reflective layer may be an oxide or nitride of SiO ₂ , SiN, SiO _x Ny, TiO ₂ , Si ₃ N ₄ , Al ₂ O ₃ , TiN, AlN, ZrO ₂ , TiAlN, or TiSiN, and can be a combination.

Referring to FIG. 11C , first to third color filter layers 384 , 385 , and 386 may be sequentially formed on the reflective layer 293 . For example, the first color filter layer 384 may be disposed at a position corresponding to the optical layer 381 and may have a width greater than that of the optical layer 381 . The second color filter layer 385 may be disposed at a position corresponding to the first color conversion layer 382 and may have a width greater than that of the first color conversion layer 382 . The third color filter layer 386 may be disposed at a position corresponding to the second color conversion layer 383 and may have a width greater than that of the second color conversion layer 383 .

Referring to FIG. 11D , micro lenses 390 may be formed on upper surfaces of the first color filter layer 384 , the second color filter layer 385 , and the third color filter layer 386 , respectively. For example, the plurality of micro lenses 390 may attach sheets having a plurality of micro lens arrays to the upper surfaces of the first color filter layer 384, the second color filter layer 385, and the third color filter layer 386. can However, the plurality of micro lenses 390 may be manufactured in various ways without being limited thereto. For example, the microlens array may be formed using a high temperature reflow method, a grayscale mask photolithography method, a molding/imprinting method, or a dry etching pattern transfer method. ) can be formed in a variety of ways, such as

The pixel 200-2 formed through such a process may have a maximum amount of light emitted to the front. For example, after passing through the optical layer 381, a portion of the light emitted from the first light emitting device unit 315a is incident to the first color filter layer 384 through the opening 295, and the remainder is incident on the reflective layer 293. ) and may be reflected on the inner surface of the first light emitting device portion 315a or reflected again by the reflective layer 293. In this case, the remaining light may be reflected several times in the sub-pixel and then be incident to the first color filter layer 384 through the opening 295 . Accordingly, the light passing through the first color filter layer 384 may be condensed by the micro lens 390 and then emitted in a frontal direction (eg, a direction toward the incident surface of the projection lens 110). In this case, since the light emitted through the opening 295 may maximize the amount of light emitted toward the front, wasted light may be minimized and luminance may be improved. The lights emitted from the second light emitting element unit 315b and the third light emitting element unit 315c are collected when passing through the opening 295 of the reflective layer 293 and condensed by the microlens 390, and are then focused on the front surface (for example, , a direction toward the incident surface of the projection lens 110).

12 is a cross-sectional view illustrating a pixel structure of a display module according to another exemplary embodiment of the present disclosure.

Referring to FIG. 12 , in a pixel 200-3 of a display module according to another embodiment of the present disclosure, the structure of each sub-pixel 201-3, 202-3, and 203-3 is the pixel 200 described above. Most of them are substantially the same as each of the sub-pixels 201, 202, and 203 of ), and there are some differences.

According to an exemplary embodiment, in the pixel 200-3, a barrier rib (refer to reference numeral 312 in FIG. 3 ) partitioning subpixels 201-3, 202-3, and 203-3 is omitted, and the metal layer 340-3 is omitted. 3) Subpixels 201-3, 202-3, and 203-3 may be independently partitioned instead of the barrier rib.

According to an embodiment, an upper end of the metal layer 340 - 3 may have a height contacting the thin film encapsulation layer 375 . In this case, the reflective film (refer to reference numeral 317 in FIG. 3) disposed on the side surface of the barrier rib may be omitted.

The display module 160 according to various embodiments of the present disclosure includes a substrate 370, a plurality of light emitting device units 315a, 315b, and 315c arranged on the substrate 370, and a plurality of light emitting device units 315a and 315b. , 315c) and disposed above the barrier rib 312 that partitions the sub-pixel regions, and the plurality of light emitting element parts 315a, 315b, and 315c, and emitted from the light emitting element parts 315a, 315b, and 315c. The color conversion layers 382 and 383 emitting excitation light by light and a plurality of light emitting elements connecting the light emitting element parts 315a, 315b, and 315c as part of the plurality of light emitting element parts 315a, 315b, and 315c. A common electrode 323 including a metal layer 340 disposed on the upper portions of the device portions 315a, 315b, and 315c and inside the barrier rib 312 to contact the upper portions of the light emitting device portions 315a, 315b, and 315c, and , It may include a plurality of individual electrodes 320 respectively disposed on surfaces opposite to the light emitting surfaces of the plurality of light emitting device units 315a, 315b, and 315c.

According to various embodiments, the metal layer 340 may be formed in a lattice shape along the shape of the barrier rib 312 .

According to various embodiments, each of the plurality of light emitting device units 315a, 315b, and 315c has one side of a first semiconductor layer 311 integrally formed with a common electrode 323 and a second semiconductor connected to an individual electrode 320. The active layer 313 disposed between the layer 314 and the first semiconductor layer 311 and the second semiconductor layer 314 may be included.

According to various embodiments, the barrier rib 312 may extend from the common electrode 323 . In this case, the barrier rib 312 and the common electrode 323 are integral and may be formed of substantially the same material.

According to various embodiments, the height h2 of the metal layer 340 may be smaller than the height of the barrier rib 312 . Alternatively, the height h3 of the metal layer 340' may be substantially equal to the height of the barrier rib 312'.

According to various embodiments, a lower end of the metal layer 340 may be disposed at a position lower than lower ends of the color conversion layers 382 and 383 . In this case, the lower end of the metal layer 340 is disposed between the plurality of light emitting device portions 315a, 315b, and 315c to be positioned above the planarization layer 360 separating the plurality of light emitting device portions 315a, 315b, and 315c. can

According to various embodiments, a reflective film 317 may be formed on a side surface of the barrier rib 312 . Accordingly, it is possible to prevent light emitted from each of the light emitting device portions 315a, 315b, and 315c from being reflected in the trenches 316 provided between the barrier ribs 312 and emitted toward adjacent subpixels. For example, when the metal layer 340 is formed of a metal material having a high light reflectivity, light may be blocked from being emitted toward an adjacent subpixel.

According to various embodiments, an optical layer 381 may be disposed on some of the plurality of light emitting device units 315a, 315b, and 315c.

According to various embodiments, the plurality of light emitting device units 315a, 315b, and 315c may emit light (eg, blue light) of substantially the same wavelength band.

According to various embodiments, the display module 160 may further include a plurality of color filter layers 384, 385, and 386 disposed on the color conversion layers 382 and 383 and on the optical layer 381. .

According to various embodiments, the display module 160 may further include black matrices 387 and 387-1 partitioning the plurality of color filter layers 384, 385, and 386. In this case, the black matrices 387 and 387-1 may be positioned above the barrier rib 312.

According to various embodiments, the display module 160 may further include a plurality of micro lenses 390 disposed on top surfaces of the plurality of color filter layers 384 , 385 , and 386 .

According to various embodiments, the display module 160 includes a black matrix 387-1 disposed above the barrier rib 312, color conversion layers 382 and 383, an optical layer 381, and a black matrix 387-1. 1), a thin film encapsulation layer 375-1 covering the same, and a plurality of color filter layers disposed on the upper surface of the thin film encapsulation layer 375-1 and corresponding to the color conversion layers 382 and 383 and the optical layer 381 ( 384, 385, 386) may be further included. In this case, the display module 160 may further include a plurality of micro lenses 390 disposed on top surfaces of the plurality of color filter layers 384 , 385 , and 386 .

According to various embodiments, the display module 160 is disposed below the plurality of micro lenses 390 and collects light emitted from the plurality of light emitting device units 315a, 315b, and 315c into the corresponding micro lenses 390. A reflective layer 293 may be further included. In this case, the reflective layer 293 may include a plurality of openings 295 that reduce the light emission area before light emitted from each of the light emitting device parts 315a, 315b, and 315c is incident to the corresponding microlens 390. there is. In this case, the opening 295 may have a width w2 smaller than the width w1 of the space provided between the partition walls 312 .

According to various embodiments, the reflective layer 293 may be disposed between the thin film encapsulation layer 375-1 and the plurality of color filter layers 384, 385, and 386.

A wearable electronic device 101 according to various embodiments of the present disclosure includes a display module 160 including a substrate 370 and a plurality of subpixels 201, 202, and 203 arranged on the substrate 370, and the display module It may include a projection lens 110 for condensing light emitted from 160 and a diffractive optical member 111 for entering light emitted from the projection lens 110 from one side and radiating it to the other side. In this case, a plurality of subpixels (201, 202, 203; 201-1, 202-1, 203-1; 201-2, 202-2, 203-2; 201-3, 202-3, 203-3) between the plurality of light emitting device portions 315a, 315b, and 315c and the barrier rib 312 extending from the plurality of light emitting device portions 315a, 315b, and 315c and partitioning sub-pixel regions, and the barrier rib 312 An optical layer 381 and color conversion layers 382 and 383 disposed on the optical layer 381 and a plurality of color filter layers 384, 385 and 386 disposed on the upper part of the color conversion layers 382 and 383 ), black matrices 387 and 387-1 partitioning the plurality of color filter layers 384, 385 and 386, and a plurality of micro lenses disposed on the upper surfaces of the plurality of color filter layers 384, 385 and 386 ( 390) and the plurality of light emitting element parts 315a, 315b, 315c as a part of the plurality of light emitting element parts 315a, 315b, 315c connecting to each other, and the upper part of the barrier rib ( 312) disposed on the opposite surface of the light emitting surface of the common electrode 323 including the metal layer 340 disposed inside and in contact with the upper part of the light emitting element part and the plurality of light emitting element parts 315a, 315b, and 315c, respectively. It may include a plurality of individual electrodes 320 to be.

According to various embodiments, the metal layer 340 may be formed in a lattice shape along the shape of the barrier rib 312 , and the barrier rib 312 may extend from the common electrode 323 .

In the above, various embodiments of the present disclosure have been individually described, but each embodiment is not necessarily implemented alone, and the configuration and operation of each embodiment may be implemented in combination with at least one other embodiment. .

Although the above has been shown and described with respect to preferred embodiments of the present disclosure, the present disclosure is not limited to the specific embodiments described above, and is commonly used in the technical field belonging to the present disclosure without departing from the gist of the present disclosure claimed in the claims. Of course, various modifications and implementations are possible by those with knowledge of, and these modifications should not be individually understood from the technical spirit or perspective of the present disclosure.

101: wearable electronic device 110: projection lens
111: rotating optical member 160: display module
200: pixels 201, 202, 203: sub-pixels
312: barrier ribs 315a, 315b, 315c: light emitting element unit
340: metal layer 370: substrate
381: optical layer 382, 383: color conversion layer
384, 385, 386: color filter layer 390: micro lens

Claims (20)

Board;
a plurality of light emitting element units arranged on the substrate;
barrier ribs extending from the plurality of light emitting device portions and partitioning sub-pixel regions;
a color conversion layer disposed above the plurality of light emitting element units and emitting excitation light by light emitted from the plurality of light emitting element units;
a common electrode including a metal layer as a part of the plurality of light emitting device units and disposed on the upper portions of the plurality of light emitting device units connecting the plurality of light emitting device units and inside the barrier rib to contact the upper portions of the plurality of light emitting device units; and
A display module comprising: a plurality of individual electrodes respectively disposed on surfaces opposite to the light emitting surface of the plurality of light emitting element units. According to claim 1,
The metal layer is formed in a lattice form along the shape of the barrier rib, the display module. According to claim 1,
Each of the plurality of light emitting element parts,
a first semiconductor layer having one side integrally formed with the common electrode;
a second semiconductor layer connected to the individual electrode; and
A display module comprising: an active layer disposed between the first semiconductor layer and the second semiconductor layer. According to claim 3,
The barrier rib extends from the common electrode, the display module. According to claim 4,
The height of the metal layer is less than or equal to the height of the barrier rib, the display module. According to claim 1,
The lower end of the metal layer is disposed at a lower position than the lower end of the color conversion layer, the display module. According to claim 6,
The lower end of the metal layer is disposed between the plurality of light emitting element parts and is located on top of a planarization layer that isolates the plurality of light emitting element parts, the display module. According to claim 1,
The barrier rib is formed with a reflective film on the inside, the display module. According to claim 1,
An optical layer is disposed on some of the plurality of light emitting device units, the display module. According to claim 9,
The plurality of light emitting element units emit light of the same wavelength, the display module. According to claim 9,
Further comprising a plurality of color filter layers disposed on the upper portion of the color conversion layer and the upper portion of the optical layer, the display module. According to claim 11,
Further comprising a black matrix partitioning the plurality of color filter layers,
The black matrix is located above the barrier rib, the display module. According to claim 11,
The display module further comprises a plurality of micro lenses disposed on the upper surface of the plurality of color filter layers. According to claim 11,
a black matrix disposed above the barrier rib;
a thin film encapsulation layer covering the color conversion layer, the optical layer, and the black matrix; and
Disposed on the upper surface of the thin film encapsulation layer and a plurality of color filter layers corresponding to the color conversion layer and the optical layer; further comprising a display module. According to claim 14,
The display module further comprises a plurality of micro lenses disposed on the upper surface of the plurality of color filter layers. According to claim 15,
Further comprising a reflective layer disposed under the plurality of microlenses and concentrating light emitted from the plurality of light emitting elements into corresponding microlenses,
The display module, wherein the reflective layer includes a plurality of openings that reduce a light output area before light emitted from the light emitting element unit is incident to a corresponding microlens. According to claim 16,
Wherein the opening has a width smaller than a width of a space provided between the barrier ribs, the display module. According to claim 16,
The reflective layer,
Disposed between the thin film encapsulation layer and the plurality of color filter layers, the display module. a display module including a substrate and a plurality of sub-pixels arranged on the substrate;
a projection lens condensing light emitted from the display module; and
A diffractive optical member for entering the light emitted from the projection lens from one side and radiating it to the other side;
The plurality of subpixels,
A plurality of light emitting element units, barrier ribs extending from the plurality of light emitting unit units and dividing regions of the subpixels, an optical layer and a color conversion layer disposed between the barrier ribs, and an upper portion of the color conversion layer and the color conversion layer. A plurality of color filter layers disposed on the optical layer, a black matrix partitioning the plurality of color filter layers, a plurality of micro lenses disposed on the upper surface of the plurality of color filter layers, and each of the plurality of light emitting element units as part of each of the plurality of color filter layers. A common electrode including a metal layer disposed on the upper portion of the plurality of light emitting device portions connecting the light emitting device portions and inside the barrier rib and contacting the upper portion of the light emitting device portion, and a surface opposite to the light emitting surface of the plurality of light emitting device portions, respectively. A wearable electronic device comprising a plurality of individual electrodes disposed thereon. According to claim 19,
The metal layer is formed in a lattice form along the shape of the barrier rib,
The barrier rib extends from the common electrode, the wearable electronic device.

Images