KR20230011229A - Light Emitting Diode Display Device And Method Of Driving The Same - Google Patents

Abstract

The present invention provides a light emitting diode display, which includes: a display panel including a plurality of pixels; a light emitting diode disposed in each of the plurality of pixels; a first transistor connected between the light emitting diode and light emitting high potential voltage and being one of N type and P type; a second transistor which is connected between the light emitting diode and the light emitting low potential voltage and is the other of the N-type and P-type transistors. Accordingly, light emission luminance uniformity is improved.

Description

Light Emitting Diode Display Device And Method Of Driving The Same}

The present invention relates to a light emitting diode display device, and more particularly, to a light emitting diode display device including a pixel having an N-type transistor and a P-type transistor, and a method for driving the same.

An organic light emitting diode display device or a micro light emitting diode display device saves manufacturing costs by configuring a pixel with one type of transistor between an N-type transistor and a P-type transistor. can do. However, there is a problem in that a change in characteristics due to a change in power supply voltage or the like or restrictions on other operations may occur.

1 is a diagram showing one pixel of an organic light emitting diode display device according to a first example of the related art, and FIG. 2 is a waveform diagram showing signals used in the organic light emitting diode display device according to the first example of the related art. .

As shown in FIG. 1, one pixel P of the organic light emitting diode display device according to the first example of the related art includes P-type first to seventh transistors M1 to M7 and a first capacitor C1. , and includes a light emitting diode (Del).

The first transistor M1 switches the connection between the high potential voltage EVDD and the first capacitor C1 and the second and fourth transistors M2 and M4 according to the light emitting signal EM, and the second transistor ( M2) switches the connection between the data signal DATA and the first and fourth transistors M1 and M4 according to the Nth gate signal GATE(N).

The third transistor M3 is connected to the first capacitor C1, the fourth and fifth transistors M4 and M5 and the initialization voltage VINT according to the (N−1)th gate signal GATE(N−1). The connection between the seventh transistor M7 is switched, and the fourth transistor M4 has first and second transistors according to the voltages of the connection nodes of the first capacitor C1 and the third and fifth transistors M3 and M5. A connection between the transistors M1 and M2 and the fifth and sixth transistors M5 and M6 is switched.

The fifth transistor M5 is connected between the first capacitor C1, the third and fourth transistors M3 and M4, and the fourth and sixth transistors M4 and M6 according to the Nth gate signal GATE(N). and the sixth transistor M6 switches the connection between the fourth and fifth transistors M4 and M5 and the light emitting diode Del according to the light emitting signal EM.

The seventh transistor M7 switches the initialization voltage VINT and the connection between the third transistor M3 and the light emitting diode Del according to the Nth gate signal GATE(N).

The first electrode of the first capacitor C1 is connected to the high potential voltage EVDD and the first transistor M1, and the second electrode of the first capacitor C1 is connected to the third, fourth and fifth transistors M3. , M4, M5).

An anode of the light emitting diode Del is connected to the sixth and seventh transistors M6 and M7, and a cathode of the light emitting diode Del is connected to the low potential voltage EVSS.

As shown in FIG. 2, the data signal DATA has a valid period for each frame, and the (N−1)th gate signal GATE(N−1) is the value of the previous frame of the data signal DATA. It has a low level during the initialization period Tin corresponding to the valid period, and the Nth gate signal GATE(N) is low during the sensing and programming period Tsp corresponding to the valid period of the current frame of the data signal DATA. level, the light emitting signal EM has a low level during the corresponding light emitting period Tem after the effective period of the next frame of the data signal DATA.

Accordingly, during the initialization period Tin, the third transistor M3 is turned on and the initialization voltage VINT is charged in the first capacitor C1.

During the sensing and programming period Tsp, the second transistor M2 is turned on so that the data signal DATA is applied to the source of the fourth transistor M4, and the fifth transistor M5 is turned on and the data signal DATA is applied to the source of the fourth transistor M4. The signal DATA and the threshold voltage of the fourth transistor M4 are charged in the first capacitor C1, and the seventh transistor M7 is turned on to apply the initialization voltage VINT to the light emitting diode Del. .

During the light emitting period Tem, the first transistor M1 is turned on to apply the high potential voltage EVDD to the source of the fourth transistor M4, and the sixth transistor M6 is turned on to generate a data signal. A current corresponding to (DATA) is supplied to the light emitting diode (Del), and the light emitting diode (Del) emits light corresponding to the data signal (DATA).

However, since the pixel P operates based on the high potential voltage EVDD, when a change occurs in the high potential voltage EVDD supplied to each pixel P of the display panel, the fourth transistor M4 as a driving transistor ), the luminance of light displayed by each pixel P may be changed, and the overall luminance characteristic may be changed according to the average luminance of the display panel or the shape of the image.

Although such non-uniformity in light emission luminance may not be well recognized by a user in one display panel, in the case of configuring one large display system by connecting two or more display panels, such as in a tiled display device, the luminance between the display panels There is a problem in that the difference appears as a defect perceived by the user in the form of a stain.

3 is a diagram illustrating one pixel of an organic light emitting diode display device according to a second example of the related art.

As shown in FIG. 3, one pixel (P) of the organic light emitting diode display device according to the second example of the related art includes first to third N-type transistors (M1 to M3) and a first capacitor (C1). , and includes a light emitting diode (Del).

The gate of the first transistor M1, the source of the second transistor M2, and the first electrode of the first capacitor C1 are connected to each other to form a first node N1 and the source of the first transistor M1. , the source of the third transistor M3, the second electrode of the first capacitor C1, and the anode of the light emitting diode Del are connected to each other to form a second node N2.

The first transistor M1 switches the connection between the high potential voltage EVDD and the second node N2 according to the voltage of the first node N1, and the second transistor M2 responds to the gate signal GATE. Accordingly, the connection between the data signal DATA and the first node N1 is switched.

The third transistor M3 switches the connection between the reference voltage VREF and the second node N2 according to the reference signal REF.

A first electrode of the first capacitor C1 is connected to the first node N1, and a second electrode of the first capacitor C1 is connected to the second node N2.

The anode of the light emitting diode Del is connected to the second node N2, and the cathode of the light emitting diode Del is connected to the low potential voltage EVSS.

Accordingly, while the gate signal GATE and the reference signal REF have high levels, the second transistor M2 is turned on and the data signal DATA is applied to the first node N1, The third transistor M3 is turned on, the reference voltage VREF is applied to the second node N2, and the data signal DATA and the reference voltage are applied to the first and second electrodes of the first capacitor C1, respectively. (VREF) is entered.

During the period in which the gate signal GATE and the reference signal REF have a low level, the second and third transistors M2 and M3 are turned off, respectively, so that the voltage of the first node N1 corresponds to the threshold voltage It is boosted as much as possible, but the degree of boosting varies depending on the level of the low electric potential voltage (EVSS), so luminance non-uniformity may occur.

That is, when a change occurs in the low potential voltage (EVSS) supplied to each pixel P of the display panel, the current flowing through the first transistor M1, which is the driving transistor, is changed to change the intensity of light displayed by each pixel P. Luminance may be changed, and overall luminance characteristics may be changed according to the average luminance of the display panel or the shape of the image.

Although such non-uniformity in light emission luminance may not be well recognized by a user in one display panel, in the case of configuring one large display system by connecting two or more display panels, such as in a tiled display device, the luminance between the display panels There is a problem in that the difference appears as a defect perceived by the user in the form of a stain.

4 is a diagram illustrating a conventional large display system.

As shown in FIG. 4, a conventional large display system has a plurality of panels arranged in a 3*3 matrix in first to third panel rows PR1 to PR3 and first to third panel columns PC1 to PC3. It includes a light emitting diode display panel.

When the current of the driving transistor changes due to the variation of the high potential voltage (EVDD) or the low potential voltage (EVSS), the non-uniformity of light emitting luminance may not be recognized in one light emitting diode display panel, but the two-dimensionally tiled In a plurality of light emitting diode display panels, non-uniform light emission luminance may be recognized as a defect such as a surface stain.

The present invention has been made to solve the above problems, and by connecting a current source transistor and a source follower transistor to the anode and cathode of the light emitting diode, respectively, uniform current is supplied to the light emitting diode even when the power supply voltage fluctuates, resulting in uniform luminance. It is an object of the present invention to provide a light emitting diode display device with improved properties and a driving method thereof.

In addition, the present invention provides a light emitting diode display device and a driving method thereof, in which a test transistor is connected to the anode and the cathode of the light emitting diode, thereby improving the ability to detect defects in the manufacturing process and easily repairing defects to reduce manufacturing costs aims to

In order to achieve the above object, the present invention, a display panel including a plurality of pixels; a light emitting diode disposed in each of the plurality of pixels; at least one current source connected between the light emitting diode and the light emitting high potential voltage or between the light emitting diode and the light emitting low potential voltage; A light emitting diode display device including a control circuit unit supplying a control signal to the at least one current source is provided.

The at least one current source may include a first transistor connected between the light emitting diode and the light emitting high potential voltage, and which is one of an N-type and a P-type; A second transistor that is connected between the light emitting diode and the light emitting low potential voltage and is the other one of the N type and the P type transistor may be included.

In addition, the control circuit unit may include a latch connected between a digital high potential voltage and a digital low potential voltage and generating first and second output signals using image data and programming signals; A level shifter connected between a pin high potential voltage and a pin low potential voltage and generating third and fourth output signals for switching the first and second transistors using the first and second output signals, respectively can do.

The latch may include a P-type first digital transistor for switching transfer of the first output signal according to the programming signal; an N-type second digital transistor switching transmission of the image data according to the programming signal; an N-type third digital transistor switching transmission of the digital low potential voltage according to a reset signal; a P-type fourth digital transistor switching transmission of the digital high potential voltage according to the first output signal or the digital low potential voltage; an N-type fifth digital transistor for switching transmission of the digital low potential voltage according to the first output signal or the digital low potential voltage; a P-type sixth digital transistor switching transmission of the digital high-potential voltage according to the second output signal; and a seventh N-type digital transistor switching transmission of the digital low potential voltage according to the second output signal, wherein the level shifter switches transmission of the pin high potential voltage according to the third output signal. a P-type eighth digital transistor; an N-type ninth digital transistor switching transmission of the pin low potential voltage according to the first output signal; a P-type tenth digital transistor switching transmission of the pin high potential voltage according to the fourth output signal; An N-type 11th digital transistor for switching transmission of the pin low potential voltage according to the fourth output signal may be included.

In addition, the control circuit unit is connected between a pin high potential voltage and a pin low potential voltage, and first and second output signals respectively switch the first and second transistors using image data, a programming signal, and a light emitting signal. and an integrated level shifter that generates an N-type first digital transistor for switching transmission of the first output signal according to the light emitting signal; a P-type second digital transistor for switching transmission of the first output signal according to the programming signal; a third N-type digital transistor switching transmission of the image data according to the programming signal; a P-type fourth digital transistor switching transmission of the pin high potential voltage according to the first output signal or the image data; an N-type fifth digital transistor for switching transmission of the pin low potential voltage according to the first output signal or the image data; a sixth P-type digital transistor switching transmission of the pin high potential voltage according to the light emitting signal; a P-type seventh digital transistor switching transmission of the pin high potential voltage according to the second output signal; An N-type eighth digital transistor switching transmission of the pin low potential voltage according to the second output signal may be included.

The light emitting diode display device may further include a third transistor connected between an anode and a cathode of the light emitting diode, the first and third transistors may be N-type, and the second transistor may be P-type. .

In addition, the control circuit unit may include an N-type fourth transistor for switching a connection between a first data signal and a gate of the first transistor according to a first programming signal; an N-type fifth transistor for switching a connection between a second data signal and a source of the first transistor according to a second programming signal; A first capacitor connected between a gate and a source of the first transistor may be included.

The control circuit unit may include an N-type fourth transistor for switching a connection between a first data signal and the gate of the first transistor according to a programming signal; an N-type fifth transistor for switching a connection between a second data signal and a source of the first transistor according to the programming signal; A first capacitor connected between a gate and a source of the first transistor may be included.

The control circuit unit may include an N-type fourth transistor for switching a connection between a data signal and the gate of the first transistor according to a programming signal; an N-type fifth transistor for switching a connection between a reference signal and a source of the first transistor according to a sense signal; A first capacitor may be connected between the gate of the first transistor and the drain of the fifth transistor.

The control circuit unit is connected between a pin high potential voltage and a pin low potential voltage, and a level shifter generates first and second output signals using first and second image data, a programming signal, and an enable signal. Wow; a latch connected between the pin high potential voltage and the pin low potential voltage and generating third and fourth output signals respectively switching the first and second transistors using the first and second output signals; wherein the level shifter comprises: a first digital transistor for switching a connection between the pin high potential voltage and a drain of a third digital transistor according to the first output signal; a second digital transistor for switching a connection between the pin high potential voltage and the drain of a fourth digital transistor according to the second output signal; the third digital transistor for switching a connection between the drain of the first digital transistor and the drain of the ninth digital transistor according to the first output signal; the fourth digital transistor switching a connection between the drain of the second digital transistor and the drain of the ninth digital transistor according to the second output signal; a fifth digital transistor for switching a connection between the drain of the first digital transistor and the drain of the ninth digital transistor according to the voltage of the first electrode of the first capacitor; a sixth digital transistor for switching a connection between the drain of the second digital transistor and the drain of the ninth digital transistor according to the voltage of the first electrode of the second capacitor; a seventh digital transistor for switching a connection between the first image data and the gate of the fifth digital transistor according to the programming signal; an eighth digital transistor for switching a connection between the second image data and the gate of the sixth digital transistor according to the programming signal; the ninth digital transistor for switching a connection between sources of the third to sixth digital transistors and the pin low potential voltage according to the enable signal; the first capacitor connected between the source of the seventh digital transistor and the pin low potential voltage; and the second capacitor connected between the source of the eighth digital transistor and the pin low potential voltage.

In addition, the control circuit unit may include a level shifter connected between a pin high potential voltage and a pin low potential voltage and generating an output signal using image data, a programming signal, and a precharge signal; a latch connected between the pin high potential voltage and the pin low potential voltage and configured to generate third and fourth output signals respectively switching the first and second transistors using the output signal; The shifter includes: a first digital transistor for switching a connection between the pin high potential voltage and the drain of a third digital transistor according to the precharge signal; a second digital transistor for switching a connection between the pin high potential voltage and the drain of a fourth digital transistor according to the voltage of the first electrode of the second capacitor; the third digital transistor switching a connection between the drain of the first digital transistor and the drain of the sixth digital transistor according to the precharge; the fourth digital transistor for switching a connection between the drain of the second digital transistor and the pin low potential voltage according to the voltage of the first electrode of the second capacitor; a fifth digital transistor for switching a connection between the image data and the gate of the sixth digital transistor according to the programming signal; the sixth digital transistor switching the connection between the source of the third digital transistor and the pin low potential voltage according to the voltage of the first electrode of the first capacitor; a first capacitor coupled between the source of the fifth digital transistor and the pin low potential voltage; The second capacitor may be connected between a gate of the second digital transistor and the pin low potential voltage.

Further, the at least one current source includes a first transistor that is connected between the light emitting diode and the light emitting high potential voltage and is one of an N type and a P type, and the light emitting diode display device is connected to the anode of the light emitting diode and the test transistor. A third transistor connected between voltages may be further included, and a cathode of the light emitting diode may be connected to a light emitting low potential voltage.

In addition, the control circuit unit may include a latch connected between a digital high potential voltage and a digital low potential voltage and generating first and second output signals using image data and programming signals; A level shifter connected between a pin high potential voltage and a pin low potential voltage and generating a third output signal for switching the first transistor using the first and second output signals.

The control circuit unit includes an integrated level shifter connected between a pin high potential voltage and a pin low potential voltage and generating a first output signal for switching the first transistor using image data, a programming signal, and a light emitting signal. can include

In addition, the control circuit unit may include an N-type fourth transistor for switching a connection between a first data signal and a gate of the first transistor according to a first programming signal; an N-type fifth transistor for switching a connection between a second data signal and a source of the first transistor according to a second programming signal; A first capacitor connected between a gate and a source of the first transistor may be included.

The control circuit unit may include an N-type fourth transistor for switching a connection between a first data signal and the gate of the first transistor according to a programming signal; an N-type fifth transistor for switching a connection between a second data signal and a source of the first transistor according to the programming signal; A first capacitor connected between a gate and a source of the first transistor may be included.

The control circuit unit may include an N-type fourth transistor for switching a connection between a data signal and the gate of the first transistor according to a programming signal; an N-type fifth transistor for switching a connection between a reference signal and a source of the first transistor according to a sense signal; A first capacitor may be connected between the gate of the first transistor and the drain of the fifth transistor.

The control circuit unit may include a latch connected between a digital high potential voltage and a digital low potential voltage and generating first and second output signals using image data and programming signals; a fourth N-type transistor for switching a connection between the first output signal and a source of the first transistor according to a reference signal; a fifth N-type transistor for switching a connection between the second output signal and the gate of the first transistor according to the reference signal; a sixth P-type transistor for switching a connection between the emission high potential voltage and a source of the first transistor according to a first emission signal; a seventh N-type transistor for switching a connection between the drain of the first transistor and the anode of the light emitting diode according to a second light emitting signal; A first capacitor connected between a gate of the first transistor and a source of the first transistor may be included.

In addition, the control circuit unit may include a latch connected between a digital high potential voltage and a digital low potential voltage and generating first and second output signals using image data and programming signals; a fourth N-type transistor for switching a connection between the first output signal and the gate of the first transistor according to a reference signal; a fifth N-type transistor for switching a connection between the second output signal and a source of the first transistor according to the reference signal; a sixth P-type transistor for switching a connection between the emission high potential voltage and the drain of the first transistor according to a first emission signal; a seventh N-type transistor for switching a connection between the source of the first transistor and the anode of the light emitting diode according to a second light emitting signal; A first capacitor connected between a gate of the first transistor and a source of the first transistor may be included.

In the present invention, by connecting a current source transistor and a source follower transistor to the anode and cathode of the light emitting diode, respectively, a uniform current is supplied to the light emitting diode even when the power supply voltage changes, thereby improving the uniformity of light emitting luminance.

Further, in the present invention, by connecting the test transistor to the anode and the cathode of the light emitting diode, the ability to detect defects in the manufacturing process is improved and defects are easily repaired, thereby reducing manufacturing costs.

1 is a view showing one pixel of an organic light emitting diode display device according to a first example of the related art;
2 is a waveform diagram illustrating signals used in an organic light emitting diode display device according to a first example of the related art;
3 is a diagram illustrating one pixel of an organic light emitting diode display device according to a second example of the related art;
4 is a diagram showing a conventional large display system;
5 is a diagram showing a light emitting diode display device according to a first embodiment of the present invention.
6 is a diagram showing pixels of a light emitting diode display device according to a first embodiment of the present invention;
7 is a diagram showing pixels of a light emitting diode display device according to a first embodiment of the present invention;
8 is a waveform diagram showing signals used in pixels of the light emitting diode display device according to the first embodiment of the present invention.
9 is a waveform diagram showing signals used in pixels of a light emitting diode display device according to a second embodiment of the present invention;
10 is a diagram showing pixels of a light emitting diode display device according to a third embodiment of the present invention.
11 is a diagram showing pixels of a light emitting diode display device according to a fourth embodiment of the present invention;
12 is a waveform diagram showing signals used in pixels of a light emitting diode display device according to a fourth embodiment of the present invention;
13 is a diagram showing pixels of a light emitting diode display device according to a fifth embodiment of the present invention.
14 is a diagram showing pixels of a light emitting diode display device according to a sixth embodiment of the present invention.
15 is a diagram showing pixels of a light emitting diode display device according to a sixth embodiment of the present invention;
16 is a view showing a light emitting part of a pixel of a light emitting diode display device according to a seventh embodiment of the present invention.
17 is a view showing a light emitting part of a pixel of a light emitting diode display device according to an eighth embodiment of the present invention.
18 is a waveform diagram showing signals used in light emitting units of pixels of a light emitting diode display according to an eighth embodiment of the present invention;
19 is a view showing a light emitting part of a pixel of a light emitting diode display device according to a ninth embodiment of the present invention.
20 is a waveform diagram showing signals used in light emitting units of pixels of a light emitting diode display device according to a ninth embodiment of the present invention;
21 is a diagram showing pixels of a light emitting diode display device according to a tenth embodiment of the present invention.
22 is a waveform diagram showing signals used in pixels of a light emitting diode display device according to a tenth embodiment of the present invention.
23 is a diagram showing pixels of a light emitting diode display device according to an 11th embodiment of the present invention.
24 is a diagram showing pixels of a light emitting diode display device according to a twelfth embodiment of the present invention.
25 is a diagram showing pixels of a light emitting diode display device according to a thirteenth embodiment of the present invention;
26 is a diagram showing pixels of a light emitting diode display device according to a 14th embodiment of the present invention;
27 is a diagram showing a level shifter of a pixel of a light emitting diode display device according to a 14th embodiment of the present invention.
28 is a waveform diagram showing signals used in a level shifter of a pixel of a light emitting diode display device according to a 14th embodiment of the present invention.
29 is a view showing a level shifter of a pixel of a light emitting diode display device according to a fifteenth embodiment of the present invention.
30 is a waveform diagram showing signals used in a level shifter of a pixel of a light emitting diode display device according to a fifteenth embodiment of the present invention.
31 is a diagram showing pixels of a light emitting diode display device according to a sixteenth embodiment of the present invention;
32 is a diagram showing pixels of a light emitting diode display device according to a 17th embodiment of the present invention;

Hereinafter, specific details of the present invention will be described in detail with reference to the accompanying drawings.

5 is a view showing a light emitting diode display device according to the first embodiment of the present invention, and FIG. 6 is a view showing pixels of the light emitting diode display device according to the first embodiment of the present invention.

5 and 6, the light emitting diode display device 110 according to the first embodiment of the present invention includes a timing controller 120, a gate driver 130, a data driver 140, and a display panel ( 160).

The timing controller 120 receives an image signal (IMS) and a plurality of timing signals (DE, HSY, VSY, CLK) from an external system such as a TV system or a graphic card, and receives image data (RGB) and gate control signal (GCS). ) and a data control signal (DCS) are generated, the generated gate control signal (GCS) is supplied to the gate driver 130, and the generated image data (RGB) and the data control signal (DCS) are transferred to the data driver 140 supplied with

The gate driver 130 generates a plurality of switching signals such as a gate signal (gate voltage), a sensing signal, and a light emitting signal by using the gate control signal GCS, and transmits the generated plurality of switching signals to the display panel 160. supplied with

The data driver 140 converts the image data RGB into a data signal (data voltage) using the data control signal DCS, and transmits the converted data signal to the display panel 160 through the data line DL. supply

The display panel 160 displays an image using a gate signal and a data signal. To this end, the display panel 160 includes a gate line GL and a data line DL that cross each other to define the pixel P. and a latch (digital storage element) 172, a level shifter 174, first and second transistors M1 and M2, and a light emitting diode Del formed in each pixel P. include

The latch 172 of the control circuit unit for supplying control signals to the current source receives the image data (RGB), the programming signal (PGM), and the reset signal (RS), and receives the digital high potential voltage (VCC) and the digital low potential voltage ( VSS) is used to output the first and second output signals, and the first and second output signals may be inverted signals.

In another embodiment, the reset signal RS may be omitted.

The level shifter 174 of the control circuit unit for supplying the control signal to the current source receives the first and second output signals, and uses the pin high potential voltage PVDD and the pin low potential voltage PVSS to obtain the third and third output signals. Four output signals are output, and the third and fourth output signals may be inverted signals.

The first transistor M1 operating as the first current source 182 that allows a constant current to flow through the light emitting diode Del is connected between the light emitting high potential voltage EVDD and the light emitting diode Del according to the third output signal. and the second transistor M2 switches the connection between the light emitting diode Del and the emission low potential voltage EVSS according to the fourth output signal.

The first transistor M1 has an N-type (negative type), and the gate of the first transistor M1 is connected to the third output signal of the level shifter 174 to form a first node N1. The drain of the transistor M1 is connected to the emission high potential voltage EVDD, and the source of the first transistor M1 is connected to the anode of the light emitting diode Del to form the second node N2.

The second transistor M2 operating as the second current source 184 that allows a constant current to flow through the light emitting diode Del has a P-type (positive type), and the source of the second transistor M2 is the light emitting diode Del. ) is connected to the cathode of the third node N3, and the gate of the second transistor M2 is connected to the fourth output signal of the level shifter 174 to form the fourth node N4. A drain of the transistor M2 is connected to the emission low potential voltage EVSS.

The first and second transistors M1 and M2 and the light emitting diode Del constitute the light emitting part of each pixel P.

In such a pixel P, the current level of the light emitting diode Del is determined by the voltages of the first and fourth nodes N1 and N4 and the L-I-V characteristics of the light emitting diode Del.

That is, the voltage condition of the steady state is expressed as Equation (1) below.

V(N1) - V(N4) = Vgs(M1) + V(Del) + Vsg(M2) --- Equation (1)

V(N1) is the voltage of the first node N1, V(N4) is the voltage of the fourth node N4, Vgs(M1) is the voltage difference between the gate and the source of the first transistor M1, V(Del) is the voltage difference between the anode and cathode of the light emitting diode Del, and Vgs(M2) is the voltage difference between the source and gate of the second transistor M2.

If Equation (1) is solved with the voltages of the first to fourth nodes N1 to N4, it is expressed as Equation (2) below.

V(N1) - V(N4) = {V(N1) - V(N2)} + {V(N2) - V(N3)} + {V(N3) - V(4)} --- formula ( 2)

V(N2) is the voltage of the second node N2, and V(N3) is the voltage of the fourth node N4.

Therefore, the current level of the light emitting diode Del depends on the voltage of the first and fourth nodes N1 and N4 and the operation of the light emitting diode Del, regardless of the light emitting high potential voltage EVDD and the light emitting low potential voltage EVSS. Since it is determined by the characteristics, when there is no voltage drop due to DC bypass current in the level shifter 174, the current flowing through the light emitting diode Del is constant regardless of the luminance of the image. .

That is, when the level shifter 174 outputs the third and fourth output signals using the first and second signals of the latch 172 to which the digital storage concept is applied, the DC bypass current in the level shifter 174 can be prevented, and in this case, if the luminance of the image does not exceed the threshold (when the first and second transistors M1 and M2 operating as source followers for light emission operate in the saturation region), the light emitting diode Del is constant. It can emit light of luminance.

Here, the image data (RGB) input to the latch 172 has a digital type of digital voltage level.

In this way, in the pixel P of the light emitting diode display device 110 according to the first embodiment of the present invention, the latch 172 has first and second DC voltage levels constant so that flicker does not occur. The output signal is output, and the level shifter 174 applies the third and fourth signals necessary for light emission to the gates of the first and fourth transistors M1 and M4, thereby increasing the emission high potential voltage EVDD and the emission low potential. A constant current may flow through the light emitting diode Del regardless of the variation of the voltage EVSS.

And, when the pixel P includes the light emitting diode Del emitting red light, green light, and blue light, by adjusting the aspect ratio of the first and second transistors M1 and M2, red, green, A current reflecting the difference in operating characteristics of the blue light emitting diodes Del may flow through the light emitting diodes Del.

The latch 172 and the level shifter 174 may be composed of a plurality of transistors, which will be described with reference to the drawings.

7 is a diagram showing pixels of a light emitting diode display device according to the first embodiment of the present invention, and FIG. 8 is a waveform showing signals used in pixels of the light emitting diode display device according to the first embodiment of the present invention. As a diagram, it will be described with reference to FIGS. 5 and 6 together.

As shown in FIG. 7, the pixel P of the light emitting diode display device 110 according to the first embodiment of the present invention includes a latch 172, a level shifter 174, and first and second transistors M1. , M2), and a light emitting diode (Del), wherein the latch 172 includes the first to seventh digital transistors Q1 to Q7, and the level shifter 174 includes the eighth to eleventh digital transistors Q8 to Q7. Q11), the first and second transistors M1 and M2, and the light emitting diode Del constitute a light emitting unit.

The first, fourth, sixth, eighth, and tenth digital transistors Q1, Q4, Q6, Q8, and Q10 are P-type, and the second, third, fifth, seventh, ninth, and eleventh digital transistors are P-type. The digital transistors Q2, Q3, Q5, Q7, Q9, and Q11 are N-type.

The first digital transistor Q1 is connected between the first output signal and the gates of the fourth and fifth digital transistors Q4 and Q5 according to the programming signal PGM, which is a signal for inputting the image data RGB to the latch 172. The second digital transistor Q2 switches the connection between the image data RGB and the gates of the fourth and fifth digital transistors Q4 and Q5 according to the programming signal PGM.

The third digital transistor Q3 establishes a connection between the digital low potential voltage VSS and the gates of the fourth and fifth digital transistors Q4 and Q5 according to the reset signal RS, which is a signal for resetting the latch 172. switch

In another embodiment, the reset signal RS and the third digital transistor Q3 may be omitted.

The fourth digital transistor Q4 switches the connection between the digital high potential voltage VCC and the second output signal according to the first output signal or the digital low potential voltage VSS, and the fifth digital transistor Q5 switches the connection between the digital high potential voltage VCC and the second output signal. The connection between the digital low potential voltage (VSS) and the second output signal is switched according to one output signal or the digital low potential voltage (VSS).

The sixth digital transistor Q6 switches the connection between the digital high potential voltage VCC and the first output signal according to the second output signal, and the seventh digital transistor Q7 switches the digital low potential according to the second output signal. The connection between the voltage VSS and the second output signal is switched.

The eighth digital transistor Q8 switches the connection between the pin high potential voltage PVDD and the fourth output signal according to the third output signal, and the ninth digital transistor Q9 switches the pin low potential according to the first output signal. The connection between the voltage PVSS and the fourth output signal is switched.

The tenth digital transistor Q10 switches the connection between the pin high potential voltage PVDD and the third output signal according to the fourth output signal, and the eleventh digital transistor Q11 switches the pin low potential according to the fourth output signal. The connection between the voltage (PVSS) and the third output signal is switched.

Here, the pin high potential voltage (PVDD) and the pin low potential voltage (PVSS) allow current required for the first and second transistors M1 and M2 and the light emitting diode Del to flow, which are in charge of light emission, and The second transistors M1 and M2 may operate in a saturation region to have a voltage level that allows the source follower to operate normally.

For example, the pin high potential voltage PVDD may be greater than the digital high potential voltage VCC and smaller than the emission high potential voltage EVDD.

As shown in FIG. 8, the image data (RGB) has a valid period for each frame, and the reset signal (RS) is during the reset period (Trs) corresponding to the valid period of the current frame of the image data (RGB). has a high level, and the programming signal PGM has a high level during a programming period Tpg corresponding to an effective period of the current frame of the image data RGB.

Accordingly, during the reset period Trs, the first and second output signals of the latch 172 become low (0) and high (1), respectively, and are input to the level shifter 174, and the level shifter 174 The third and fourth output signals become low (0) and high (1), respectively, and are transmitted to the first and fourth nodes N1 and N4, and as a result, the first and second transistors M1 and M2 respectively When turned off, the light emitting diode Del does not emit light.

During the programming period Tpg, the first and second output signals of the latch 172 become high (1) and low (0) and are input to the level shifter 174, and the third and second output signals of the level shifter 174 The fourth output signal becomes high (1) and low (0) and transferred to the first and fourth nodes (N1, N4), and as a result, the first and second transistors (M1, M2) are turned on, respectively. The light emitting diode (Del) emits light.

That is, the section between the rising point of the reset section Trs and the rising point of the programming section Tpg becomes the non-light emitting section Tne in which the light emitting diode Del does not emit light, and the rising point of the programming section Tpg The section between the first and the rising point of the reset section Trs of the next frame becomes the light emitting section Tem in which the light emitting diode Del emits light.

As described above, in the light emitting diode display device 110 according to the first embodiment of the present invention, the first and second transistors M1 and M2 are connected to the anode and cathode of the light emitting diode Del, respectively, and a constant direct current is applied. The latch 172, which is a digital storage device for outputting first and second output signals of a voltage level, and the level shifter 174 outputting the third and fourth output signals of a voltage level required for light emission are used to generate the first and second output signals. By switching the two transistors M1 and M2, a constant current can flow through the light emitting diode Del regardless of the variation of the emission high potential voltage EVDD and the emission low potential voltage EVSS, and as a result, the emission luminance Uniformity can be improved.

In another embodiment, the reset period may not be used, which will be described with reference to the drawings.

9 is a waveform diagram showing signals used in pixels of a light emitting diode display device according to a second embodiment of the present invention, and descriptions of the same parts as those of the first embodiment are omitted.

As shown in FIG. 9, the image data (RGB) has a valid period for each frame, the reset signal (RS) has a low level, and the programming signal (PGM) has a current frame of the image data (RGB). It has a high level during the programming period Tpg corresponding to the effective period.

Accordingly, during the programming period Tpg, the first and second output signals of the latch 172 become high (1) and low (0) and are input to the level shifter 174, and the level shifter 174 The third and fourth output signals become high (1) and low (0) and transferred to the first and fourth nodes (N1, N4), and as a result, the first and second transistors (M1, M2) When turned on, the light emitting diode Del emits light.

That is, the section between the rising point of the programming section Tpg and the rising point of the programming section Tpg of the next frame becomes the light emitting section Tem in which the light emitting diode Del emits light.

As described above, in the light emitting diode display device according to the second embodiment of the present invention, the first and second transistors M1 and M2 are connected to the anode and cathode of the light emitting diode Del, respectively, and the latch 172 and By switching the first and second transistors M1 and M2 using the level shifter 174, a constant current is generated regardless of variations in the light emitting high potential voltage EVDD and the light emitting low potential voltage EVSS. ), and as a result, the uniformity of light emission luminance can be improved.

In another embodiment, defects may be detected and repaired by connecting both ends of the light emitting diode with a test transistor, which will be described with reference to the drawings.

10 is a diagram showing pixels of a light emitting diode display device according to a third embodiment of the present invention, and descriptions of the same parts as those of the first and second embodiments are omitted.

As shown in FIG. 10, the pixel P of the light emitting diode display device according to the third embodiment of the present invention includes a latch 172, a level shifter 174, and first, second, and third transistors M1. , M2, M3), and a light emitting diode (Del), wherein the latch 172 includes the first to seventh digital transistors (Q1 to Q7), and the level shifter 174 includes the eighth to eleventh digital transistors ( Q8 to Q11), the first, second and third transistors M1, M2 and M3, and the light emitting diode Del constitute a light emitting unit.

The first transistor M1, which operates as a current source that allows a constant current to flow through the light emitting diode Del, switches the connection between the light emitting high potential voltage EVDD and the light emitting diode Del according to the third output signal, and emits light. The second transistor M2, which operates as a current source that allows a constant current to flow through the diode Del, switches the connection between the light emitting diode Del and the light emitting low potential voltage EVSS according to the fourth output signal, and The transistor M3 switches the connection between the anode and cathode of the light emitting diode Del according to the test signal TE.

The gate of the first N-type transistor M1 is connected to the third output signal of the level shifter 174 to form the first node N1, and the drain of the first transistor M1 is connected to the emission high potential voltage EVDD. ), and the source of the first transistor M1 is connected to the anode of the light emitting diode Del to form the second node N2.

The source of the P-type second transistor M2 is connected to the cathode of the light emitting diode Del to form the third node N3, and the gate of the second transistor M2 is the fourth output of the level shifter 174. It is connected to the signal to form the fourth node N4, and the drain of the second transistor M2 is connected to the emission low potential voltage EVSS.

The drain and source of the third N-type transistor M3 are connected to the second and third nodes N2 and N3, respectively, and the gate of the third transistor M3 is connected to the test signal TE.

The light emitting diode display device according to the third embodiment of the present invention can operate in a display mode and a test mode.

In the display mode, the third transistor M3 is turned off, the light emitting diode Del emits light, and the light emitting diode display displays an image.

In the test mode, the third transistor (M3) is turned on so that the light emitting diode (Del) does not emit light, and the latch (172) ) and defects in the first to eleventh digital transistors Q1 to Q11 and the first and second transistors M1 and M2 of the level shifter 174 are detected.

Here, in the case where the light emitting diode Del is not connected between the second and third nodes N2 and N3 during the manufacturing process, the third transistor M3 is turned on to normalize elements other than the light emitting diode Del. operation can be detected.

After the light emitting diode Del is connected between the second and third nodes N2 and N3 during the manufacturing process, the voltage difference between the second and third nodes N2 and N3 is the light emitting threshold voltage of the light emitting diode Del. By turning on the third transistor M3 so as to be smaller than that, it is possible to detect whether elements other than the light emitting diode Del are normally operating.

As described above, in the light emitting diode display device according to the third embodiment of the present invention, the first and second transistors M1 and M2 are connected to the anode and cathode of the light emitting diode Del, respectively, and the latch 172 and By switching the first and second transistors M1 and M2 using the level shifter 174, a constant current is generated regardless of variations in the light emitting high potential voltage EVDD and the light emitting low potential voltage EVSS. ), and as a result, the uniformity of light emission luminance can be improved.

In addition, by connecting the third transistor M3 to the anode and cathode of the light emitting diode Del and turning on the third transistor M3, defects in the manufacturing process can be detected and repaired, resulting in manufacturing cost. this can be saved.

In the third embodiment of FIG. 10, the second transistor M2 is connected between the cathode of the light emitting diode Del and the light emitting low potential voltage EVSS as an example, but in another embodiment, the second transistor M2 It may be omitted and the cathode of the light emitting diode Del may be directly connected to the light emitting low potential voltage EVSS. In this case, the level shifter 174 outputs the third output signal and does not output the fourth output signal, and the third transistor ( The source of M3) may be connected to the test voltage TM instead of the third node N3, which will be described in detail with reference to FIGS. 14 and 15.

In another embodiment, the latch and the level shifter may be configured as one level shifter, which will be described with reference to the drawings.

11 is a diagram showing pixels of a light emitting diode display device according to a fourth embodiment of the present invention, and FIG. 12 is a waveform showing signals used in pixels of a light emitting diode display device according to a fourth embodiment of the present invention. As a figure, descriptions of the same parts as those of the first to third embodiments are omitted.

As shown in FIG. 11, the pixel P of the light emitting diode display device according to the fourth embodiment of the present invention includes an integrated level shifter 176, first and second transistors M1 and M2, and a light emitting diode ( Del), the first and second transistors M1 and M2 and the light emitting diode Del constitute the light emitting unit.

The integrated level shifter 176 of the control circuit unit for supplying control signals to the current source receives image data (RGB), programming signal (PGM), and light emitting signal (EM), and receives pin high potential voltage (PVDD) and pin low potential. First and second output signals are output using the voltage PVSS, and the first and second output signals may be mutually inverted signals.

The first transistor M1, which operates as a current source that allows a constant current to flow through the light emitting diode Del, switches the connection between the light emitting high potential voltage EVDD and the light emitting diode Del according to the first output signal, and emits light. The second transistor M2, which operates as a current source that allows a constant current to flow through the diode Del, switches the connection between the light emitting diode Del and the light emitting low potential voltage EVSS according to the second output signal.

The first transistor M1 has a negative type, and the gate of the first transistor M1 is connected to the first output signal of the integrated level shifter 176 to form a first node N1. The drain of one transistor M1 is connected to the emission high potential voltage EVDD, and the source of the first transistor M1 is connected to the anode of the light emitting diode Del to form the second node N2.

The second transistor M2 has a P-type (positive type), the source of the second transistor M2 is connected to the cathode of the light emitting diode Del to form a third node N3, and the second transistor M2 ) is connected to the second output signal of the integrated level shifter 176 to form a fourth node N4, and the drain of the second transistor M2 is connected to the emission low potential voltage EVSS.

The integrated level shifter 176 includes first to eighth digital transistors Q1 to Q8.

The second, fourth, sixth, and seventh digital transistors Q2, Q4, Q6, and Q7 are P-type, and the first, third, fifth, and eighth digital transistors Q1, Q3, Q5, and Q8 are P-type. has an N-type.

The first digital transistor Q1 switches the connection between the first output signal and the gates of the fourth and fifth digital transistors Q4 and Q5 according to the light emitting signal EM, and the second digital transistor Q2 is programmed. Connections between the first output signal and the gates of the fourth and fifth digital transistors Q4 and Q5 are switched according to the signal PGM.

The third digital transistor Q3 switches the connection between the image data RGB and the gates of the fourth and fifth digital transistors Q4 and Q5 according to the programming signal PGM.

The fourth digital transistor Q4 switches the connection between the pin high potential voltage PVDD and the second output signal according to the first output signal or the image data RGB, and the fifth digital transistor Q5 switches the first output signal. The connection between the pin low potential voltage (PVSS) and the second output signal is switched according to the signal or image data (RGB).

The sixth digital transistor Q6 switches the connection between the pin high potential voltage PVDD and the second output signal according to the emission signal EM, and the seventh digital transistor Q7 switches the pin high potential voltage according to the second output signal. The connection between the high potential voltage PVDD and the first output signal is switched, and the eighth digital transistor Q8 switches the connection between the pin low potential voltage PVSS and the first output signal according to the second output signal.

Here, the pin high potential voltage (PVDD) and the pin low potential voltage (PVSS) allow current required for the first and second transistors M1 and M2 and the light emitting diode Del to flow, which are in charge of light emission, and The second transistors M1 and M2 may operate in a saturation region to have a voltage level that allows the source follower to operate normally.

For example, the pin high potential voltage PVDD may have a smaller value than the emission high potential voltage EVDD.

In addition, by adjusting the aspect ratio of the first to eighth digital transistors Q1 to Q8, the integrated level shifter 176 converts the image data RGB to the pin high potential voltage PVDD and pin low potential voltage levels PVSS. It can perform both the function of changing voltage and the function of storing image data (RGB).

As shown in FIG. 12, the image data RGB has a valid section for each frame, and the light emitting signal EM has a non-storage section Tns corresponding to the valid section of the current frame of the image data RGB. The programming signal PGM has a high level during the programming period Tpg corresponding to the effective period of the current frame of the image data RGB.

Accordingly, during the non-storage period Tns, the first and second output signals of the integrated level shifter 176 become low (0) and high (1), respectively, to the first and fourth nodes N1 and N4. As a result, the first and second transistors M1 and M2 are turned off, so that the light emitting diode Del does not emit light.

During the programming period Tpg, the first and second output signals of the integrated level shifter 176 become high (1) and low (0) and transferred to the first and fourth nodes N1 and N4, respectively. As a result, the first and second transistors M1 and M2 are turned on, respectively, and the light emitting diode Del emits light.

That is, the section between the falling time of the non-storage section Tns and the rising time of the programming section Tpg becomes a non-emitting section Tne in which the light emitting diode Del does not emit light, and the rising time of the programming section Tpg A section between the start point and the falling point of the non-storage section Tns of the next frame becomes a light emitting section Tem in which the light emitting diode Del emits light.

Also, during a period in which the emission signal EM has a high level and the programming signal PGM has a low level, the image data RGB is stored in the integrated level shift 176 .

As described above, in the light emitting diode display device according to the fourth embodiment of the present invention, the first and second transistors M1 and M2 are connected to the anode and cathode of the light emitting diode Del, respectively, and the integrated level shifter 176 ) is used to switch the first and second transistors M1 and M2 so that a constant current flows through the light emitting diode Del regardless of variations in the emission high potential voltage EVDD and the emission low potential voltage EVSS. As a result, the uniformity of luminance can be improved.

In another embodiment, defects may be detected and repaired by connecting both ends of the light emitting diode with a test transistor, which will be described with reference to the drawings.

13 is a diagram showing pixels of a light emitting diode display device according to a fifth embodiment of the present invention, and descriptions of the same parts as those of the first to fourth embodiments are omitted.

As shown in FIG. 13, the pixel P of the light emitting diode display device according to the fifth embodiment of the present invention includes an integrated level shifter 176, first, second, and third transistors M1, M2, and M3. ), and a light emitting diode (Del), wherein the integrated level shifter 176 includes first to eighth digital transistors (Q1 to Q8), and the first, second and third transistors (M1, M2, M3) , the light emitting diode Del constitutes a light emitting unit.

The first transistor M1, which operates as a current source that allows a constant current to flow through the light emitting diode Del, switches the connection between the light emitting high potential voltage EVDD and the light emitting diode Del according to the first output signal, and emits light. The second transistor M2, which operates as a current source that allows a constant current to flow through the diode Del, switches the connection between the light emitting diode Del and the light emitting low potential voltage EVSS according to the second output signal, and The transistor M3 switches the connection between the anode and cathode of the light emitting diode Del according to the test signal TE.

The gate of the N-type first transistor M1 is connected to the first output signal of the integrated level shifter 176 to form the first node N1, and the drain of the first transistor M1 emits a high potential voltage ( EVDD), and the source of the first transistor M1 is connected to the anode of the light emitting diode Del to form the second node N2.

The source of the P-type second transistor M2 is connected to the cathode of the light emitting diode Del to form a third node N3, and the gate of the second transistor M2 is connected to the second node of the integrated level shifter 176. It is connected to the output signal to form the fourth node N4, and the drain of the second transistor M2 is connected to the emission low potential voltage EVSS.

The drain and source of the third N-type transistor M3 are connected to the second and third nodes N2 and N3, respectively, and the gate of the third transistor M3 is connected to the test signal TE.

The light emitting diode display device according to the fifth embodiment of the present invention can operate in a display mode and a test mode.

In the display mode, the third transistor M3 is turned off, the light emitting diode Del emits light, and the light emitting diode display displays an image.

In the test mode, the third transistor (M3) is turned on so that the light emitting diode (Del) does not emit light, and the integrated level shifter uses the image data (RGB), programming signal (PGM), and light emitting signal (EM). Defects in the first to eighth digital transistors Q1 to Q8 and the first and second transistors M1 and M2 of (176) are detected.

Here, in the case where the light emitting diode Del is not connected between the second and third nodes N2 and N3 during the manufacturing process, the third transistor M3 is turned on to normalize elements other than the light emitting diode Del. operation can be detected.

After the light emitting diode Del is connected between the second and third nodes N2 and N3 during the manufacturing process, the voltage difference between the second and third nodes N2 and N3 is the light emitting threshold voltage of the light emitting diode Del. By turning on the third transistor M3 so as to be smaller than that, it is possible to detect whether elements other than the light emitting diode Del are normally operating.

As described above, in the light emitting diode display device according to the fifth embodiment of the present invention, the first and second transistors M1 and M2 are connected to the anode and cathode of the light emitting diode Del, respectively, and the integrated level shifter 176 ) is used to switch the first and second transistors M1 and M2 so that a constant current flows through the light emitting diode Del regardless of variations in the emission high potential voltage EVDD and the emission low potential voltage EVSS. As a result, the uniformity of luminance can be improved.

In addition, by connecting the third transistor M3 to the anode and cathode of the light emitting diode Del and turning on the third transistor M3, defects in the manufacturing process can be detected and repaired, resulting in manufacturing cost. this can be saved.

In another embodiment, the second transistor M2 may be omitted and the cathode of the light emitting diode Del may be directly connected to the emission low potential voltage EVSS, which will be described with reference to the drawings.

14 is a diagram showing pixels of a light emitting diode display device according to a sixth embodiment of the present invention, and FIG. 15 is a waveform showing signals used in pixels of a light emitting diode display device according to a sixth embodiment of the present invention. As a figure, descriptions of the same parts as those of the first to fifth embodiments are omitted.

As shown in FIG. 14, the pixel P of the light emitting diode display device according to the sixth embodiment of the present invention includes an integrated level shifter 176, first and third transistors M1 and M3, and a light emitting diode ( Del), the first and third transistors M1 and M3 and the light emitting diode Del constitute the light emitting unit.

The integrated level shifter 176 of the control circuit unit for supplying control signals to the current source includes first to eighth digital transistors Q1 to Q8, including image data RGB, programming signals PGM, and light emitting signals EM. ) is input, and a first output signal is output using the pin high potential voltage (PVDD) and the pin low potential voltage (PVSS).

The first transistor M1, which operates as a current source that allows a constant current to flow through the light emitting diode Del, switches the connection between the light emitting high potential voltage EVDD and the light emitting diode Del according to a first output signal, and The third transistor M3 switches the connection between the anode of the light emitting diode Del and the test voltage TM according to the test signal TE.

The gate of the N-type first transistor M1 is connected to the first output signal of the integrated level shifter 176 to form the first node N1, and the drain of the first transistor M1 emits a high potential voltage ( EVDD), and the source of the first transistor M1 is connected to the anode of the light emitting diode Del to form the second node N2.

The drain and source of the third N-type transistor M3 are connected to the second node N2 and the test voltage TM, respectively, and the gate of the third transistor M3 is connected to the test signal TE.

The light emitting diode display device according to the sixth embodiment of the present invention can operate in a display mode and a test mode.

In the display mode, the third transistor M3 is turned off, the light emitting diode Del emits light, and the light emitting diode display displays an image.

In the test mode, the third transistor (M3) is turned on so that the light emitting diode (Del) does not emit light, and the second node (N2) is initialized to the test voltage (TM) to prevent the voltage from being reduced below a specific voltage. Alternatively, the characteristics of the first transistor M1 or the light emitting diode Del may be measured.

As shown in FIG. 15, in the test mode of the LED display device, the image data (RGB) has a test data (test input data) section, and the light emitting signal (EM) is in the test data section of the image data (RGB). It has a low level during the corresponding non-storage period Tns, the programming signal PGM has a high level during the programming period Tpg corresponding to the test data period of the image data RGB, and the test signal TE has an image It has a high level during the test period Tts corresponding to the next frame of the data RGB.

Accordingly, during the non-storage period Tns, the first output signal of the integrated level shifter 176 becomes low (0) and is transmitted to the first node N1, and the gate of the first transistor M1 is initialized. .

During the programming period Tpg, the first output signal of the integrated level shifter 176 becomes high (1) and is transferred to the first node N1, and the gate of the first transistor M1 reflects the pixel state.

During the test period Tts, the test signal TE becomes high (1), the third transistor M3 is turned on, and the test voltage TM is the source of the first transistor M1 at the second node. It is transferred to (N2) to detect a characteristic change of the first transistor M1 or the light emitting diode Del.

As described above, in the light emitting diode display device according to the sixth embodiment of the present invention, the first transistor M1 is connected to the anode of the light emitting diode Del, and the first transistor (M1) is connected using the integrated level shifter 176 ( By switching M1), a constant current can flow through the light emitting diode Del regardless of variations in the emission high potential voltage (EVDD) and the emission low potential voltage (EVSS), and as a result, the uniformity of emission luminance can be improved. can

In addition, by connecting the third transistor M3 to the anode of the light emitting diode Del and turning on the third transistor M3, defects in the manufacturing process can be detected and repaired, and as a result, manufacturing costs are reduced. It can be.

In another embodiment, a current source and a source follower may be connected to the anode and cathode of the light emitting diode, respectively, which will be described with reference to the drawings.

16 is a view showing a light emitting part of a pixel of a light emitting diode display device according to a seventh embodiment of the present invention, and descriptions of the same parts as those of the first to sixth embodiments are omitted.

As shown in FIG. 16, the light emitting part of the pixel P of the light emitting diode display device according to the seventh embodiment of the present invention includes N-type first, third to fifth transistors M1, M3 to M5, It includes a second N-type transistor M2, a first capacitor C1, and a light emitting diode Del.

The first transistor M1, which operates as a current source that allows a constant current to flow through the light emitting diode Del, establishes a connection between the light emitting high potential voltage EVDD and the light emitting diode Del according to the voltage of the first node N1. The second transistor M2, which operates as a current source for switching and allowing a constant current to flow through the light emitting diode Del, is connected between the light emitting diode Del and the emission low potential voltage EVSS according to the voltage of the third node N3. and the third transistor M3 switches the connection between the anode and cathode of the light emitting diode Del according to the test signal TE.

The fourth transistor M4 of the control circuit part supplying the control signal to the current source switches the connection between the first data signal DATA1 and the first node N1 according to the first programming signal PGM1, and controls the current source. The fifth transistor M5 of the control circuit unit supplying the signal switches the connection between the second data signal DATA2 and the second node N2 according to the second programming signal PGM2.

The first transistor M1 is N-type (negative type), the gate of the first transistor M1 is connected to the first node N1, and the drain of the first transistor M1 is connected to the emission high potential voltage EVDD. ), and the source of the first transistor M1 is connected to the second node N2.

The second transistor M2 has a P-type (positive type), the gate of the second transistor M2 is connected to the light emitting signal EM, and the source of the second transistor M2 is connected to the third node N3. and the drain of the second transistor M2 is connected to the emission low potential voltage EVSS.

The third transistor M3 has an N type, the gate of the third transistor M3 is connected to the test signal TE, the drain of the third transistor M3 is connected to the second node N2, and the third transistor M3 is connected to the second node N2. The source of the 3 transistor M3 is connected to the third node N3.

The fourth transistor M4 has an N type, the gate of the fourth transistor M4 is connected to the first programming signal PGM1, and the drain of the fourth transistor M4 is connected to the first data signal DATA1. and the source of the fourth transistor M4 is connected to the first node N1.

The fifth transistor M5 has an N type, the gate of the fifth transistor M5 is connected to the second programming signal PGM2, and the drain of the fifth transistor M5 is connected to the second data signal DATA2. and the source of the fifth transistor M5 is connected to the second node N2.

First and second electrodes of the first capacitor C1 of the control circuit unit supplying the control signal to the current source are connected to the first and second nodes N1 and N2, respectively.

An anode and a cathode of the light emitting diode Del are connected to the second and third nodes N2 and N3, respectively.

The gate of the first transistor (M1), the source of the fourth transistor (M4), and the first electrode of the first capacitor (C1) constitute the first node (N1), and the source of the first transistor (M1), the third The drain of the transistor M3, the source of the fifth transistor M5, the second electrode of the first capacitor C1, and the anode of the light emitting diode Del constitute the second node N2, and the second transistor M2 ), the source of the third transistor M3, and the cathode of the light emitting diode Del constitute the third node N3.

The light emitting diode display device according to the seventh embodiment of the present invention can operate in a display mode and a test mode.

In the display mode, the third transistor M3 is turned off, the light emitting diode Del emits light, and the light emitting diode display displays an image.

In the test mode, the third transistor M3 is turned on so that the light emitting diode Del does not emit light, and the first and second data signals DATA1 and DATA2, the first and second programming signals PGM1, PGM2) and the emission signal EM are used to detect defects in the first to fifth transistors M1 to M5.

Here, in the case where the light emitting diode Del is not connected between the second and third nodes N2 and N3 during the manufacturing process, the third transistor M3 is turned on to normalize elements other than the light emitting diode Del. operation can be detected.

After the light emitting diode Del is connected between the second and third nodes N2 and N3 during the manufacturing process, the voltage difference between the second and third nodes N2 and N3 is the light emitting threshold voltage of the light emitting diode Del. By turning on the third transistor M3 so as to be smaller than that, it is possible to detect whether elements other than the light emitting diode Del are normally operating.

As described above, in the light emitting diode display device according to the seventh embodiment of the present invention, the first and second transistors M1 and M2 are connected to the anode and cathode of the light emitting diode Del, respectively, and the fourth and fifth transistors M1 and M2 are respectively connected. By using the transistors M4 and M5 to operate the first and second transistors M1 and M2 as a current source and a source follower, respectively, it is independent of variations in the emission high potential voltage EVDD and the emission low potential voltage EVSS. It is possible to allow a constant current to flow through the light emitting diode Del, and as a result, uniformity of light emission luminance can be improved.

In addition, by connecting the third transistor M3 to the anode and cathode of the light emitting diode Del and turning on the third transistor M3, defects in the manufacturing process can be detected and repaired, resulting in manufacturing cost. this can be saved.

In the seventh embodiment of FIG. 16, the example is that the second transistor M2 is connected between the cathode of the light emitting diode Del and the emission low potential voltage EVSS, but in other embodiments similar to FIGS. 14 and 15, The second transistor M2 may be omitted and the cathode of the light emitting diode Del may be directly connected to the emission low potential voltage EVSS. In this case, the source of the third transistor M3 is the test voltage instead of the third node N3. (TM).

In another embodiment, the fourth and fifth transistors may be switched with one signal, which will be described with reference to the drawings.

17 is a view showing the light emitting part of the pixel of the light emitting diode display device according to the eighth embodiment of the present invention, and FIG. 18 is the light emitting part of the pixel of the light emitting diode display device according to the eighth embodiment of the present invention. This is a waveform diagram showing signals, and descriptions of the same parts as those of the first to seventh embodiments are omitted.

As shown in FIG. 17, the light emitting part of the pixel P of the light emitting diode display device according to the eighth embodiment of the present invention includes N-type first, third to fifth transistors M1, M3 to M5, It includes a second N-type transistor M2, a first capacitor C1, and a light emitting diode Del.

The first transistor M1, which operates as a current source that allows a constant current to flow through the light emitting diode Del, establishes a connection between the light emitting high potential voltage EVDD and the light emitting diode Del according to the voltage of the first node N1. The second transistor M2, which operates as a current source for switching and allowing a constant current to flow through the light emitting diode Del, is connected between the light emitting diode Del and the emission low potential voltage EVSS according to the voltage of the third node N3. and the third transistor M3 switches the connection between the anode and cathode of the light emitting diode Del according to the test signal TE.

The fourth transistor M4 of the control circuit part supplying the control signal to the current source switches the connection between the first data signal DATA1 and the first node N1 according to the programming signal PGM, and supplies the control signal to the current source. The fifth transistor M5 of the control circuit part to be supplied switches the connection between the second data signal DATA2 and the second node N2 according to the programming signal PGM.

The first transistor M1 is N-type (negative type), the gate of the first transistor M1 is connected to the first node N1, and the drain of the first transistor M1 is connected to the emission high potential voltage EVDD. ), and the source of the first transistor M1 is connected to the second node N2.

The second transistor M2 has a P-type (positive type), the gate of the second transistor M2 is connected to the light emitting signal EM, and the source of the second transistor M2 is connected to the third node N3. and the drain of the second transistor M2 is connected to the emission low potential voltage EVSS.

The third transistor M3 has an N type, the gate of the third transistor M3 is connected to the test signal TE, the drain of the third transistor M3 is connected to the second node N2, and the third transistor M3 is connected to the second node N2. The source of the 3 transistor M3 is connected to the third node N3.

The fourth transistor M4 has an N type, the gate of the fourth transistor M4 is connected to the programming signal PGM, and the drain of the fourth transistor M4 is connected to the first data signal DATA1. The source of the fourth transistor M4 is connected to the first node N1.

The fifth transistor M5 has an N type, the gate of the fifth transistor M5 is connected to the programming signal PGM, and the drain of the fifth transistor M5 is connected to the second data signal DATA2. The source of the fifth transistor M5 is connected to the second node N2.

First and second electrodes of the first capacitor C1 of the control circuit unit supplying the control signal to the current source are connected to the first and second nodes N1 and N2, respectively.

An anode and a cathode of the light emitting diode Del are connected to the second and third nodes N2 and N3, respectively.

The gate of the first transistor (M1), the source of the fourth transistor (M4), and the first electrode of the first capacitor (C1) constitute the first node (N1), and the source of the first transistor (M1), the third The drain of the transistor M3, the source of the fifth transistor M5, the second electrode of the first capacitor C1, and the anode of the light emitting diode Del constitute the second node N2, and the second transistor M2 ), the source of the third transistor M3, and the cathode of the light emitting diode Del constitute the third node N3.

The light emitting diode display device according to the eighth embodiment of the present invention can operate in a display mode and a test mode.

In the display mode, the third transistor M3 is turned off, the light emitting diode Del emits light, and the light emitting diode display displays an image.

In the test mode, the third transistor M3 is turned on so that the light emitting diode Del does not emit light, and the first and second data signals DATA1 and DATA2, the programming signal PGM, and the light emitting signal EM ) is used to detect defects in the first to fifth transistors M1 to M5.

Here, in the case where the light emitting diode Del is not connected between the second and third nodes N2 and N3 during the manufacturing process, the third transistor M3 is turned on to normalize elements other than the light emitting diode Del. operation can be detected.

After the light emitting diode Del is connected between the second and third nodes N2 and N3 during the manufacturing process, the voltage difference between the second and third nodes N2 and N3 is the light emitting threshold voltage of the light emitting diode Del. By turning on the third transistor M3 so as to be smaller than that, it is possible to detect whether elements other than the light emitting diode Del are normally operating.

As shown in FIG. 18, the first data signal DATA1 has a valid period for each frame, the second data signal DATA2 has a low level, and the light emitting signal EM has a first data signal ( DATA1) has a high level during the non-light-emitting period Tne corresponding to the valid period of the current frame and has a low level during the light-emitting period Tem other than the non-light-emitting period Tne, and the programming signal PGM is the first data The signal DATA1 has a high level during the programming period Tpg corresponding to the valid period of the current frame.

Accordingly, during the non-emission period Tne, the second transistor M2 is turned off so that the light emitting diode Del does not emit light.

During the programming period Tpg, the fourth and fifth transistors M4 and M5 are turned on and the first and second data signals DATA1 and DATA2 are transmitted to the first and second nodes N1 and N2, respectively. As a result, the voltage difference between the first and second data signals DATA1 and DATA2 is stored in the first capacitor C1.

During the light emission period Tem, the first transistor M1 is turned on by the voltage difference between the first and second data signals DATA1 and DATA2 of the first capacitor C1 and is a current source supplying a constant current. source), and the second transistor (M2) is turned on and operates as a source follower through which a constant current flows. Accordingly, the light emitting diode Del emits light with uniform luminance by a constant current regardless of variations in the emission high potential voltage EVDD and the emission low potential voltage EVSS.

As described above, in the light emitting diode display device according to the eighth embodiment of the present invention, the first and second transistors M1 and M2 are connected to the anode and cathode of the light emitting diode Del, respectively, and the fourth and fifth transistors M1 and M2 are respectively connected. By using the transistors M4 and M5 to operate the first and second transistors M1 and M2 as a current source and a source follower, respectively, it is independent of variations in the emission high potential voltage EVDD and the emission low potential voltage EVSS. It is possible to allow a constant current to flow through the light emitting diode Del, and as a result, uniformity of light emission luminance can be improved.

In addition, by connecting the third transistor M3 to the anode and cathode of the light emitting diode Del and turning on the third transistor M3, defects in the manufacturing process can be detected and repaired, resulting in manufacturing cost. this can be saved.

In the eighth embodiment of FIG. 17, the example is that the second transistor M2 is connected between the cathode of the light emitting diode Del and the emission low potential voltage EVSS, but in another embodiment, the second transistor M2 In this case, the source of the third transistor M3 may be connected to the test voltage TM instead of the third node N3. .

In another embodiment, the voltage of the second electrode of the first capacitor may be fixed, which will be described with reference to the drawings.

19 is a view showing the light emitting part of the pixel of the light emitting diode display device according to the ninth embodiment of the present invention, and FIG. 20 is the light emitting part of the pixel of the light emitting diode display device according to the ninth embodiment of the present invention. This is a waveform diagram showing signals, and descriptions of the same parts as those of the first to eighth embodiments are omitted.

As shown in FIG. 19, the light emitting part of the pixel P of the light emitting diode display device according to the ninth embodiment of the present invention includes N-type first, third to fifth transistors M1, M3 to M5, It includes a second N-type transistor M2, a first capacitor C1, and a light emitting diode Del.

The first transistor M1, which operates as a current source that allows a constant current to flow through the light emitting diode Del, establishes a connection between the light emitting high potential voltage EVDD and the light emitting diode Del according to the voltage of the first node N1. The second transistor M2, which operates as a current source for switching and allowing a constant current to flow through the light emitting diode Del, is connected between the light emitting diode Del and the emission low potential voltage EVSS according to the voltage of the third node N3. and the third transistor M3 switches the connection between the anode and cathode of the light emitting diode Del according to the test signal TE.

The fourth transistor M4 of the control circuit part supplying the control signal to the current source switches the connection between the data signal DATA and the first node N1 according to the programming signal PGM, and supplies the control signal to the current source. The fifth transistor M5 of the control circuit unit switches the connection between the reference signal REF and the second node N2 according to the sense signal SE.

The first transistor M1 is N-type (negative type), the gate of the first transistor M1 is connected to the first node N1, and the drain of the first transistor M1 is connected to the emission high potential voltage EVDD. ), and the source of the first transistor M1 is connected to the second node N2.

The second transistor M2 has a P-type (positive type), the gate of the second transistor M2 is connected to the light emitting signal EM, and the source of the second transistor M2 is connected to the third node N3. and the drain of the second transistor M2 is connected to the emission low potential voltage EVSS.

The third transistor M3 has an N type, the gate of the third transistor M3 is connected to the test signal TE, the drain of the third transistor M3 is connected to the second node N2, and the third transistor M3 is connected to the second node N2. The source of the 3 transistor M3 is connected to the third node N3.

The fourth transistor M4 has an N type, the gate of the fourth transistor M4 is connected to the programming signal PGM, the drain of the fourth transistor M4 is connected to the data signal DATA, and the fourth transistor M4 is connected to the data signal DATA. The source of the transistor M4 is connected to the first node N1.

The fifth transistor M5 has an N type, the gate of the fifth transistor M5 is connected to the sense signal SE, and the drain of the fifth transistor M5 is connected to the reference signal REF and the second capacitor of the first capacitor. 2 electrode), and the source of the fifth transistor M5 is connected to the second node N2.

The first electrode of the first capacitor C1 of the control circuit part supplying the control signal to the current source is connected to the first node N1, and the second electrode of the first capacitor C1 is connected to the reference signal REF and the fifth node N1. It is connected to the drain of transistor M5.

An anode and a cathode of the light emitting diode Del are connected to the second and third nodes N2 and N3, respectively.

The gate of the first transistor (M1), the source of the fourth transistor (M4), and the first electrode of the first capacitor (C1) constitute the first node (N1), and the source of the first transistor (M1), the third The drain of the transistor M3, the source of the fifth transistor M5, and the anode of the light emitting diode Del constitute the second node N2, and the source of the second transistor M2 and the source of the third transistor M3 The source and the cathode of the light emitting diode Del constitute the third node N3.

The light emitting diode display device according to the ninth embodiment of the present invention can operate in a display mode and a test mode.

In the display mode, the third transistor M3 is turned off, the light emitting diode Del emits light, and the light emitting diode display displays an image.

In the test mode, the third transistor (M3) is turned on so that the light emitting diode (Del) does not emit light, and the data signal (DATA), sense signal (SE), programming signal (PGM), and light emitting signal (EM) Defects in the first to fifth transistors M1 to M5 are detected using

Here, in the case where the light emitting diode Del is not connected between the second and third nodes N2 and N3 during the manufacturing process, the third transistor M3 is turned on to normalize elements other than the light emitting diode Del. operation can be detected.

After the light emitting diode Del is connected between the second and third nodes N2 and N3 during the manufacturing process, the voltage difference between the second and third nodes N2 and N3 is the light emitting threshold voltage of the light emitting diode Del. By turning on the third transistor M3 so as to be smaller than that, it is possible to detect whether elements other than the light emitting diode Del are normally operating.

As shown in FIG. 20, the data signal DATA has a valid period for each frame, and the emission signal EM has a non-emission period Tne corresponding to the valid period of the current frame of the data signal DATA. During the programming period Tpg corresponding to the effective period of the current frame of the data signal DATA, has a high level, and the sense signal SE has a high level during the sense period SE corresponding to the effective period of the current frame of the data signal DATA.

Accordingly, during the non-emission period Tne, the second transistor M2 is turned off so that the light emitting diode Del does not emit light.

During the programming period Tpg, the fourth transistor M4 is turned on and the data signal DATA is transmitted to the first node N1, and the voltage of the second electrode of the first capacitor C1 is the reference signal ( REF), and as a result, the voltage difference between the data signal DATA and the reference signal REF is stored in the first capacitor C1.

During the sense period SE, the fifth transistor M5 is turned on and the reference signal REF is transmitted to the second node N2, and as a result, the anode of the light emitting diode Del is initialized, and the video response time ( characteristics such as moving picture response time) are improved.

During the emission period Tem, the first transistor M1 is turned on by the data signal DATA of the first capacitor C1 and operates as a source follower through which a constant current flows, and the second transistor M1 is turned on by the data signal DATA of the first capacitor C1. M2) is turned on and operates as a source follower through which a constant current flows. Accordingly, the light emitting diode Del emits light with uniform luminance by a constant current regardless of variations in the emission high potential voltage EVDD and the emission low potential voltage EVSS.

Here, the current of the light emitting diode Del is determined by the voltage difference between the first and second transistors M1 and M2 operating as source followers, and the pixel P is a light emitting diode emitting red light, green light, and blue light ( Del), by adjusting the aspect ratio of the first and second transistors M1 and M2, the current reflecting the difference in operating characteristics of the red, green, and blue light emitting diodes Del is transmitted to the light emitting diodes Del. ) can be made to flow.

As described above, in the light emitting diode display device according to the ninth embodiment of the present invention, the first and second transistors M1 and M2 are connected to the anode and cathode of the light emitting diode Del, respectively, and the fourth and fifth transistors M1 and M2 are respectively connected. By using the transistors M4 and M5 to operate the first and second transistors M1 and M2 as source followers, respectively, the emission high potential voltage EVDD and the emission low potential voltage EVSS are constant regardless of variations. Current can flow through the light emitting diode Del, and as a result, uniformity of light emitting luminance can be improved.

In addition, by connecting the third transistor M3 to the anode and cathode of the light emitting diode Del and turning on the third transistor M3, defects in the manufacturing process can be detected and repaired, resulting in manufacturing cost. this can be saved.

In the ninth embodiment of FIG. 19, the example is that the second transistor M2 is connected between the cathode of the light emitting diode Del and the emission low potential voltage EVSS, but in another embodiment, the second transistor M2 In this case, the source of the third transistor M3 may be connected to the test voltage TM instead of the third node N3. .

In another embodiment, each pixel may be configured with a latch and a light emitting unit, which will be described with reference to the drawings.

21 is a diagram showing pixels of a light emitting diode display device according to the tenth embodiment of the present invention, and FIG. 22 is a waveform showing signals used in pixels of the light emitting diode display device according to the tenth embodiment of the present invention. As a figure, descriptions of the same parts as those of the first to ninth embodiments are omitted.

As shown in FIG. 21, the pixel P of the light emitting diode display device according to the tenth embodiment of the present invention includes a latch 172 and a light emitting unit 178. The seventh digital transistors Q1 to Q7 are included, and the light emitting unit 178 includes the first, third, fourth to seventh transistors M1, M3, M4 to M7, a first capacitor C1, and a light emitting diode. (Del).

The latch 172, the fourth to seventh transistors M4 to M7, and the first capacitor C1 form a control circuit unit supplying a control signal to the first transistor M1, which is a current source, and the first, fourth, The sixth digital transistors Q1, Q4, and Q6 have a P type, the second, third, fifth, and seventh digital transistors Q2, Q3, Q5, and Q7 have an N type, and the first and sixth digital transistors Q2, Q3, Q5, and Q7 have an N type. The transistors M1 and M6 are P-type, and the third to fifth and seventh transistors M3 to M5 and M7 are N-type.

The first digital transistor Q1 is connected between the first output signal and the gates of the fourth and fifth digital transistors Q4 and Q5 according to the programming signal PGM, which is a signal for inputting the image data RGB to the latch 172. The second digital transistor Q2 switches the connection between the image data RGB and the gates of the fourth and fifth digital transistors Q4 and Q5 according to the programming signal PGM.

The third digital transistor Q3 establishes a connection between the digital low potential voltage VSS and the gates of the fourth and fifth digital transistors Q4 and Q5 according to the reset signal RS, which is a signal for resetting the latch 172. switch

In another embodiment, the reset signal RS and the third digital transistor Q3 may be omitted.

The fourth digital transistor Q4 switches the connection between the digital high potential voltage VCC and the second output signal according to the first output signal or the digital low potential voltage VSS, and the fifth digital transistor Q5 switches the connection between the digital high potential voltage VCC and the second output signal. The connection between the digital low potential voltage (VSS) and the second output signal is switched according to one output signal or the digital low potential voltage (VSS).

The sixth digital transistor Q6 switches the connection between the digital high potential voltage VCC and the first output signal according to the second output signal, and the seventh digital transistor Q7 switches the digital low potential according to the second output signal. The connection between the voltage VSS and the second output signal is switched.

The first transistor M1, which operates as a current source that allows a constant current to flow through the light emitting diode Del, establishes a connection between the sixth transistor M6 and the seventh transistor M7 according to the voltage of the first node N1. switching, and the third transistor M3 switches the connection between the drain of the seventh transistor M7 and the test voltage TM according to the test signal TE.

The gate of the first transistor M1 is connected to the second electrode of the first capacitor C1 and the fifth transistor M5 to form a first node N1, and the source of the first transistor M1 is connected to the first node N1. The first electrode of the capacitor C1 is connected to the sixth transistor M6, and the drain of the first transistor M1 is connected to the third transistor M3 and the seventh transistor M7 to form a second node N2. make up

The fourth transistor M4 switches the connection between the first output signal and the first electrode of the first capacitor C1 according to the reference signal RF, and the fifth transistor M5 switches the connection between the first output signal and the first electrode of the first capacitor C1 according to the reference signal RF. A connection between the second output signal and the first node N1 is switched.

The sixth transistor M6 switches the connection between the emission high potential voltage EVDD and the first transistor M1 according to the first emission signal EM1, and the seventh transistor M7 switches the connection between the second emission signal EM2. ), the connection between the first transistor M1 and the light emitting diode Del is switched.

The first electrode of the first capacitor (C1) is connected to the first transistor (M1), the fourth transistor (M4), and the sixth transistor (M6), and the second electrode of the first capacitor (C1) is connected to the first node ( N1) is connected.

An anode of the light emitting diode Del is connected to the seventh transistor M7, and a cathode of the light emitting diode Del is connected to the light emitting low potential voltage EVSS.

The light emitting diode display device according to the tenth embodiment of the present invention can operate in a display mode and a test mode.

In the display mode, the third transistor M3 is turned off, the light emitting diode Del emits light, and the light emitting diode display displays an image.

In the test mode, the third transistor (M3) is turned on so that the light emitting diode (Del) does not emit light, and the second node (N2) is initialized to the test voltage (TM) to prevent the voltage from being reduced below a specific voltage. Alternatively, the characteristics of the first transistor M1 or the light emitting diode Del may be measured.

Here, in the case where the light emitting diode Del is not connected to the second node N2 during the manufacturing process, the third transistor M3 is turned on to detect normal operation of elements other than the light emitting diode Del. there is.

After the light emitting diode (Del) is connected to the second node (N2) during the manufacturing process, the third transistor is configured so that the voltage difference between the second and third nodes (N2, N3) is smaller than the emission threshold voltage of the light emitting diode (Del). By turning on M3, it is possible to detect normal operation of elements other than the light emitting diode Del.

As shown in FIG. 22, the third digital transistor Q3 is turned on according to the high-level reset signal RS between the first and second timings T1 and T2, and the fourth and fifth digital transistors Q3 are turned on. The gates of transistors Q4 and Q5 are reset to the digital low potential voltage (VSS).

Between the third and fourth timings T3 and T4, the image data RGB is input to the latch 172 according to the high-level programming signal PGM, and the first and second output signals are output from the latch 172. output

Between the fifth and tenth timings T5 and T10, the seventh transistor M7 is turned off according to the low-level second light emitting signal EM2, and is turned off at the sixth and ninth timings T6 and T9. According to the first light emitting signal EM1 of the level, the sixth transistor M6 is turned off, and the light emitting diode Del becomes a non-light emitting state.

Between the seventh and eighth timings T7 and T8, the fourth and fifth transistors M4 and M5 are turned on according to the high level reference signal RF, and the first and second transistors of the latch 172 are turned on. The output signal is transferred to the source and gate of the first transistor M1, respectively.

At the ninth and tenth timings T9 and T10, the sixth and seventh transistors M6 and M7 are turned on, so that the light emitting diode Del becomes a light emitting state. Accordingly, the first transistor M1 is turned on by the second output signal of the first capacitor C1 and operates as a source follower through which a constant current flows, and the light emitting diode Del has a high potential for light emitting. Light of uniform luminance is emitted by a constant current regardless of variations in voltage (EVDD) and emission low potential voltage (EVSS).

Here, the current of the light emitting diode Del is determined by the voltage difference between the first transistor M1 operating as a source follower and the emission low potential voltage EVSS, and the pixel P emits red light, green light, and blue light. When a light emitting diode (Del) is included, a current reflecting a difference in operating characteristics of the red, green, and blue light emitting diodes (Del) is reflected by adjusting the aspect ratio of the first transistor (M1) to the light emitting diode (Del). can flow into

As described above, in the light emitting diode display device according to the tenth embodiment of the present invention, the first transistor M1 is connected to the anode of the light emitting diode Del, and the fourth and fifth transistors M4 and M5 are used. By making the first transistor M1 operate as a source follower, a constant current can flow through the light emitting diode Del regardless of variations in the emission high potential voltage EVDD and the emission low potential voltage EVSS. As a result, the uniformity of light emission luminance can be improved.

In addition, by connecting the third transistor M3 to the anode of the light emitting diode Del and turning on the third transistor M3, defects in the manufacturing process can be detected and repaired, and as a result, manufacturing costs are reduced. It can be.

In another embodiment, the N-type first transistor M1 may be connected to the fourth transistor T4, which will be described with reference to the drawings.

23 is a diagram showing pixels of a light emitting diode display device according to an 11th embodiment of the present invention, and descriptions of the same parts as those of the 1st to 10th embodiments are omitted.

As shown in FIG. 23, the pixel P of the light emitting diode display device according to the eleventh embodiment of the present invention includes a latch 172 and a light emitting unit 178. The seventh digital transistors Q1 to Q7 are included, and the light emitting unit 178 includes the first, third to seventh transistors M1, M3 to M7, a first capacitor C1, and a light emitting diode Del. do.

The latch 172, the fourth to seventh transistors M4 to M7, and the first capacitor C1 form a control circuit unit supplying a control signal to a current source. The first, fourth, and sixth digital transistors Q1, Q4 and Q6 are P-type, and the second, third, fifth, and seventh digital transistors (Q2, Q3, Q5, and Q7) are N-type, respectively. The configuration and operation of the latch 172 of the pixel P is the same as the configuration and operation of the latch 172 of each pixel P of the light emitting diode display according to the tenth embodiment.

The sixth transistor M6 has a P-type, and the first, third to fifth, and seventh transistors M1, M3 to M5, and M7 have an N-type.

The first transistor M1, which operates as a current source that allows a constant current to flow through the light emitting diode Del, establishes a connection between the sixth transistor M6 and the seventh transistor M7 according to the voltage of the first node N1. switching, and the third transistor M3 switches the connection between the drain of the seventh transistor M7 and the test voltage TM according to the test signal TE.

The gate of the first transistor M1 is connected to the first electrode of the first capacitor C1 and the fourth transistor M4 to form a first node N1, and the drain of the first transistor M1 is connected to the sixth transistor M1. It is connected to the transistor M6, and the source of the first transistor M1 is connected to the second electrode of the first capacitor C1, the third transistor M3, the fifth transistor M5, and the seventh transistor M7. and constitutes the second node N2.

The fourth transistor M4 switches the connection between the first output signal and the first node N1 according to the reference signal RF, and the fifth transistor M5 switches the second output signal according to the reference signal RF. and the connection between the second node N2 is switched.

The sixth transistor M6 switches the connection between the emission high potential voltage EVDD and the first transistor M1 according to the first emission signal EM1, and the seventh transistor M7 switches the connection between the second emission signal EM2. ), the connection between the first transistor M1 and the light emitting diode Del is switched.

A first electrode of the first capacitor C1 is connected to the first node N1, and a second electrode of the first capacitor C1 is connected to the second node N2.

An anode of the light emitting diode Del is connected to the seventh transistor M7, and a cathode of the light emitting diode Del is connected to the light emitting low potential voltage EVSS.

The light emitting diode display device according to the eleventh embodiment of the present invention can operate in a display mode and a test mode.

In the display mode, the third transistor M3 is turned off, the light emitting diode Del emits light, and the light emitting diode display displays an image.

In the test mode, the third transistor (M3) is turned on so that the light emitting diode (Del) does not emit light, and the second node (N2) is initialized to the test voltage (TM) to prevent the voltage from being reduced below a specific voltage. Alternatively, the characteristics of the first transistor M1 or the light emitting diode Del may be measured.

Here, in the case where the light emitting diode Del is not connected to the second node N2 during the manufacturing process, the third transistor M3 is turned on to detect normal operation of elements other than the light emitting diode Del. there is.

After the light emitting diode (Del) is connected to the second node (N2) during the manufacturing process, the third transistor is configured so that the voltage difference between the second and third nodes (N2, N3) is smaller than the emission threshold voltage of the light emitting diode (Del). By turning on M3, it is possible to detect normal operation of elements other than the light emitting diode Del.

The light emitting diode display device according to the eleventh embodiment of the present invention operates according to the waveform diagram of FIG. 22 .

As described above, in the light emitting diode display device according to the eleventh embodiment of the present invention, the first transistor M1 is connected to the anode of the light emitting diode Del, and the fourth and fifth transistors M4 and M5 are used. By making the first transistor M1 operate as a source follower, a constant current can flow through the light emitting diode Del regardless of variations in the emission high potential voltage EVDD and the emission low potential voltage EVSS. As a result, the uniformity of light emission luminance can be improved.

In addition, by connecting the third transistor M3 to the anode of the light emitting diode Del and turning on the third transistor M3, defects in the manufacturing process can be detected and repaired, and as a result, manufacturing costs are reduced. It can be.

In another embodiment, the current source may be disposed on one of the anode and cathode of the light emitting diode, which will be described with reference to the drawings.

24 and 25 are diagrams showing pixels of the light emitting diode display device according to the twelfth and thirteenth embodiments, respectively, and descriptions of the same parts as those of the first to eleventh embodiments are omitted.

As shown in FIG. 24, the pixel P of the light emitting diode display device according to the twelfth embodiment of the present invention includes a latch 172, a level shifter 174, a current source 182, and a light emitting diode Del. Including, the latch 172 and the level shifter 174 constitute a control circuit unit for supplying a control signal to the current source 182, and the current source 182 and the light emitting diode (Del) constitute a light emitting unit.

The latch 172 receives the image data (RGB), the programming signal (PGM), and the reset signal (RS), and uses the digital high potential voltage (VCC) and the digital low potential voltage (VSS) to first and second To output an output signal, the first and second output signals may be inverted signals.

In another embodiment, the reset signal RS may be omitted.

The level shifter 174 receives the first and second output signals and outputs third and fourth output signals using the pin high potential voltage PVDD and the pin low potential voltage PVSS. The fourth output signals may be signals inverted from each other.

The current source 182 receives at least one of the third and fourth output signals, is connected to the anode of the light emitting diode Del, and uses at least one of the third and fourth output signals to output the light emitting diode ( Del) to allow a constant current to flow.

For example, the latch 172 and the level shifter 174 may include a plurality of transistors, and the current source 182 may include a transistor and a capacitor.

When the level shifter 174 outputs the third and fourth output signals using the first and second signals of the latch 172 to which the digital storage concept is applied, DC bypass current in the level shifter 174 is prevented. and the light emitting diode Del can emit light of constant luminance.

Here, the image data (RGB) input to the latch 172 has a digital type of digital voltage level.

As shown in FIG. 25, the pixel P of the light emitting diode display device according to the thirteenth embodiment of the present invention includes a latch 172, a level shifter 174, a current source 184, and a light emitting diode Del. The latch 172 and the level shifter 174 constitute a control circuit unit supplying a control signal to the current source 184, and the current source 184 and the light emitting diode Del constitute a light emitting unit.

The latch 172 receives the image data (RGB), the programming signal (PGM), and the reset signal (RS), and uses the digital high potential voltage (VCC) and the digital low potential voltage (VSS) to first and second To output an output signal, the first and second output signals may be inverted signals.

In another embodiment, the reset signal RS may be omitted.

The level shifter 174 receives the first and second output signals and outputs third and fourth output signals using the pin high potential voltage PVDD and the pin low potential voltage PVSS. The fourth output signals may be signals inverted from each other.

The current source 184 receives at least one of the third and fourth output signals, is connected to the cathode of the light emitting diode Del, and uses at least one of the third and fourth output signals to output the light emitting diode ( Del) to allow a constant current to flow.

For example, the latch 172 and the level shifter 174 may include a plurality of transistors, and the current source 182 may include a transistor and a capacitor.

When the level shifter 174 outputs the third and fourth output signals using the first and second signals of the latch 172 to which the digital storage concept is applied, DC bypass current in the level shifter 174 is prevented. and the light emitting diode Del can emit light of constant luminance.

Here, the image data (RGB) input to the latch 172 has a digital type of digital voltage level.

As described above, in the pixel P of the light emitting diode display device according to the twelfth and thirteenth embodiments of the present invention, the latch 172 has first and second DC voltage levels of constant DC voltage so that flicker does not occur. By outputting an output signal and applying at least one of the third and fourth output signals required for light emission by the level shifter 174 to the current sources 182 and 184, the emission high potential voltage (EVDD) and the emission low potential voltage (EVSS) ), a constant current may be allowed to flow through the light emitting diode Del, regardless of the variation of .

In another embodiment, an output signal of the level shifter may be stored in a latch and then supplied to a current source, which will be described with reference to the drawings.

26 is a view showing pixels of a light emitting diode display device according to a 14th embodiment of the present invention, and FIG. 27 is a view showing a level shifter of a pixel of a light emitting diode display device according to a 14th embodiment of the present invention. 28 is a waveform diagram showing signals used in a level shifter of a pixel of a light emitting diode display device according to a 14th embodiment of the present invention, and descriptions of the same parts as those of the 1st to 13th embodiments are omitted.

As shown in FIG. 26, the pixel P of the light emitting diode display device according to the 14th embodiment of the present invention includes a level shifter 174, a latch 172, and first and second current sources 182 and 184 , a light emitting diode (Del), and the level shifter 174 and the latch 172 constitute a control circuit unit for supplying control signals to the first and second current sources 182 and 184, and the first and second current sources (182, 184), the light emitting diode Del constitutes the light emitting part.

The level shifter 174 receives the image data (RGB), the programming signal (PGM), and the reset signal (RS), and uses the pin high potential voltage (PVDD) and the pin low potential voltage (PVSS) to first and second At least one of the two output signals is output, and the first and second output signals may be mutually inverted signals.

In another embodiment, the reset signal RS may be omitted.

The latch 172 receives at least one of the first and second output signals and outputs at least one of the third and fourth output signals using the pin high potential voltage PVDD and the pin low potential voltage PVSS. However, the third and fourth output signals may be inverted signals.

The first current source 182 receives the third output signal, is connected to the anode of the light emitting diode Del, and allows a constant current to flow through the light emitting diode Del using the third output signal. .

The second current source 184 receives the fourth output signal, is connected to the cathode of the light emitting diode Del, and allows a constant current to flow through the light emitting diode Del using the fourth output signal.

For example, the level shifter 174 and the latch 172 may include a plurality of transistors, and the first and second current sources 182 and 184 may include transistors and capacitors.

Here, the image data (RGB) input to the level shifter 174 has a digital type of digital voltage level.

As shown in FIG. 27, the level shifter 174 of the pixel P of the light emitting diode display device according to the 14th embodiment of the present invention includes the first to ninth digital transistors Q1 to Q9, the first and second digital transistors Q1 to Q9. It includes second capacitors C1 and C2.

The first and second digital transistors Q1 and Q2 are P-type, and the third to ninth digital transistors Q3 to Q9 are N-type.

The first digital transistor Q1 switches the connection between the pin high potential voltage PVDD and the drain of the third digital transistor Q3 according to the first output signal LSO1, and the second digital transistor Q2 switches the The connection between the pin high potential voltage (PVDD) and the drain of the fourth digital transistor (Q4) is switched according to the second output signal (LSO2).

The third digital transistor Q3 switches the connection between the drain of the first digital transistor Q1 and the drain of the ninth digital transistor Q9 according to the first output signal LSO1, and the fourth digital transistor Q4 switches the connection between the drain of the second digital transistor Q2 and the drain of the ninth digital transistor Q9 according to the second output signal LSO2.

The fifth digital transistor (Q5) switches the connection between the drain of the first digital transistor (Q1) and the drain of the ninth digital transistor (Q9) according to the voltage of the first electrode of the first capacitor (C1), and The digital transistor Q6 switches the connection between the drain of the second digital transistor Q2 and the drain of the ninth digital transistor Q9 according to the voltage of the first electrode of the second capacitor C2.

The seventh digital transistor Q7 transmits the first image data RGB1 and the fifth digital transistor according to the programming signal PGM, which is a signal for inputting the first and second image data RGB1 and RGB2 to the level shifter 174. The connection between the gate of Q5 is switched, and the eighth digital transistor Q8 switches the connection between the second image data RGB2 and the gate of the sixth digital transistor Q6 according to the programming signal PGM. .

The ninth digital transistor Q9 generates source and pin low potential voltages (PVSS) of the third to sixth digital transistors Q3 to Q6 according to the enable signal LSE, which is a signal for activating the output of the level shifter 174. switch the connection between them.

The first capacitor C1 is connected between the source of the seventh digital transistor Q7 and the pin low potential voltage PVSS, and the second capacitor C2 is connected between the source of the eighth digital transistor Q8 and the pin low potential voltage. (PVSS).

As shown in FIG. 28, the first and second image data RGB1 and RGB2 each have a valid section for each frame, and the programming signal PGM corresponds to the first and second image data RGB1 and RGB2. has a high level during the programming period Tpg corresponding to the effective period of the current frame, and the enable signal LSE has a high level during the output enable period Toe.

Accordingly, during the programming period Tpg, the seventh and eighth digital transistors Q7 and Q8 are turned on so that the first and second image data RGB1 and RGB2 are transferred to the first and second capacitors C1 and C2, respectively. ), and then valid first and second output signals LSO1 and LSO2 are output during the output enable period Toe, respectively.

Although not shown, the latch 172 may store the first and second output signals LSO1 and LSO2 and then supply them to the light emitting diode Del at an appropriate timing.

29 is a diagram showing a level shifter of a pixel of a light emitting diode display device according to a 15th embodiment of the present invention, and FIG. 30 is used for a level shifter of a pixel of a light emitting diode display device according to a 15th embodiment of the present invention. As a waveform diagram showing a signal to be, it will be described with reference to FIG. 26 together.

As shown in FIG. 29, the level shifter 174 of the pixel P of the light emitting diode display device according to the fifteenth embodiment of the present invention includes the first to sixth digital transistors Q1 to Q6, the first and second digital transistors Q1 to Q6. It includes second capacitors C1 and C2.

The first and second digital transistors Q1 and Q2 are P-type, and the third to sixth digital transistors Q3 to Q6 are N-type.

The first digital transistor Q1 switches the connection between the pin high potential voltage PVDD and the drain of the third digital transistor Q3 according to the precharge signal PCG, and the second digital transistor Q2 switches the second digital transistor Q2 to the second digital transistor Q2. The connection between the pin high potential voltage PVDD and the drain of the fourth digital transistor Q4 is switched according to the voltage of the first electrode of the capacitor C2.

The third digital transistor Q3 switches the connection between the drain of the first digital transistor Q1 and the drain of the sixth digital transistor Q6 according to the precharge signal PCG, and the fourth digital transistor Q4 The connection between the drain of the second digital transistor Q2 and the pin low potential voltage (PVSS) is switched according to the voltage of the first electrode of the second capacitor (C2).

The fifth digital transistor (Q5) switches the connection between the image data (RGB) and the gate of the sixth digital transistor (Q6) according to the programming signal (PGM), and the sixth digital transistor (Q6) is connected to the first capacitor (C1). The connection between the source of the third digital transistor Q2 and the pin low potential voltage (PVSS) is switched according to the voltage of the first electrode of ).

The first capacitor C1 is connected between the source of the fifth digital transistor Q5 and the pin low potential voltage PVSS, and the second capacitor C2 is connected between the gate of the second digital transistor Q2 and the pin low potential voltage. (PVSS).

The output signal LSO is output from a node between the drain of the second digital transistor Q2 and the drain of the fourth digital transistor Q4.

As shown in FIG. 30, the image data RGB has a valid section for each frame, and the pre-charge signal PCG has a pre-charge section Tpc preceding the valid section of the current frame of the image data RGB. ), and the programming signal PGM has a high level during the programming period Tpg corresponding to the effective period of the current frame of the image data RGB.

Accordingly, during the pre-charge period Tpc, the first digital transistor Q1 is turned on, the pin high potential voltage PVDD is stored in the second capacitor C2, and during the programming period Tpg, the fifth digital transistor Q1 is turned on. When (Q5) is turned on, the image data (RGB) is stored in the first capacitor (C1) and a valid output signal (LSO) is output.

Although not shown, the latch 172 may store the output signal LSO and supply it to the light emitting diode Del at an appropriate timing.

As described above, in the pixel P of the light emitting diode display device according to the 14th and 15th embodiments of the present invention, the level shifter 174 transmits image data RGB, programming signal PGM, and reset signal RS. By using and outputting one of the first and second output signals, and applying at least one of the third and fourth output signals necessary for the latch 172 to emit light to the current sources 182 and 184, the light emission high potential voltage ( A constant current may be allowed to flow through the light emitting diode Del regardless of changes in EVDD) and emission low potential voltage EVSS.

In another embodiment, the current source may be disposed on one of the anode and cathode of the light emitting diode, which will be described with reference to the drawings.

31 and 32 are diagrams showing pixels of the light emitting diode display device according to the sixteenth and seventeenth embodiments, respectively, and descriptions of the same parts as those of the first to fifteenth embodiments are omitted.

As shown in FIG. 31, the pixel P of the light emitting diode display device according to the 16th embodiment of the present invention includes a level shifter 174, a latch 172, a current source 184, and a light emitting diode Del. Including, the level shifter 174 and the latch 172 constitute a control circuit unit for supplying a control signal to the current source 184, and the current source 184 and the light emitting diode (Del) constitute a light emitting unit.

The level shifter 174 receives the image data (RGB), the programming signal (PGM), and the reset signal (RS), and uses the pin high potential voltage (PVDD) and the pin low potential voltage (PVSS) to first and second At least one of the two output signals is output, and the first and second output signals may be mutually inverted signals.

In another embodiment, the reset signal RS may be omitted.

The latch 172 receives at least one of the first and second output signals and outputs at least one of the third and fourth output signals using the pin high potential voltage PVDD and the pin low potential voltage PVSS. However, the third and fourth output signals may be inverted signals.

The current source 184 receives at least one of the third and fourth output signals, is connected to the cathode of the light emitting diode Del, and outputs the light emitting diode using at least one of the third and fourth output signals. Let a constant current flow through (Del).

For example, the level shifter 174 and the latch 172 may include a plurality of transistors, and the current source 184 may include a transistor and a capacitor.

Here, the image data (RGB) input to the level shifter 174 has a digital type of digital voltage level.

As shown in FIG. 32, the pixel P of the light emitting diode display device according to the 17th embodiment of the present invention includes a level shifter 174, a latch 172, a current source 182, and a light emitting diode Del. Including, the level shifter 174 and the latch 172 constitute a control circuit unit for supplying a control signal to the current source, and the current source 182 and the light emitting diode Del constitute a light emitting unit.

The level shifter 174 receives the image data (RGB), the programming signal (PGM), and the reset signal (RS), and uses the pin high potential voltage (PVDD) and the pin low potential voltage (PVSS) to first and second At least one of the two output signals is output, and the first and second output signals may be mutually inverted signals.

In another embodiment, the reset signal RS may be omitted.

The latch 172 receives at least one of the first and second output signals and outputs at least one of the third and fourth output signals using the pin high potential voltage PVDD and the pin low potential voltage PVSS. However, the third and fourth output signals may be inverted signals.

The current source 182 receives at least one of the third and fourth output signals, is connected to the anode of the light emitting diode Del, and outputs the light emitting diode using at least one of the third and fourth output signals. Let a constant current flow through (Del).

For example, the level shifter 174 and the latch 172 may include a plurality of transistors, and the current source 182 may include a transistor and a capacitor.

Here, the image data (RGB) input to the level shifter 174 has a digital type of digital voltage level.

In this way, in the pixel P of the light emitting diode display device according to the 16th and 17th embodiments of the present invention, the level shifter 174 transmits the image data RGB, the programming signal PGM, and the reset signal RS. By outputting one of the first and second output signals and applying at least one of the third and fourth output signals necessary for the latch 172 to emit light to the current sources 182 and 184, the emission high potential voltage (EVDD) ) and a constant current may flow through the light emitting diode Del regardless of the change in the light emitting low potential voltage EVSS.

Although the above has been described with reference to preferred embodiments of the present invention, those skilled in the art will variously modify and change the present invention within the scope not departing from the technical spirit and scope of the present invention described in the claims below. You will understand that it can be done.

110: light emitting diode display device P: pixel
M1, M2, M3: first, second, third transistors
Del: light emitting diode EVDD: light emitting high potential voltage
EVSS: light emission low potential voltage

Claims (21)

a display panel including a plurality of pixels;
a light emitting diode disposed in each of the plurality of pixels;
at least one current source connected between the light emitting diode and the light emitting high potential voltage or between the light emitting diode and the light emitting low potential voltage;
A control circuit unit for supplying a control signal to the at least one current source
A light emitting diode display comprising a.
According to claim 1,
The at least one current source,
a first transistor connected between the light emitting diode and the light emitting high potential voltage and being one of N type and P type;
and a second transistor connected between the light emitting diode and the light emitting low potential voltage and being the other one of the N type and the P type.
According to claim 2,
The control circuit part,
a latch connected between the digital high potential voltage and the digital low potential voltage and generating first and second output signals using image data and programming signals;
A level shifter connected between a pin high potential voltage and a pin low potential voltage and generating third and fourth output signals respectively switching the first and second transistors using the first and second output signals.
A light emitting diode display comprising a.
According to claim 3,
the latch,
a P-type first digital transistor switching transmission of the first output signal according to the programming signal;
an N-type second digital transistor switching transmission of the image data according to the programming signal;
a P-type fourth digital transistor switching transmission of the digital high potential voltage according to the first output signal or the digital low potential voltage;
an N-type fifth digital transistor for switching transmission of the digital low potential voltage according to the first output signal or the digital low potential voltage;
a P-type sixth digital transistor switching transmission of the digital high-potential voltage according to the second output signal;
A seventh N-type digital transistor switching transmission of the digital low potential voltage according to the second output signal.
including,
The level shifter,
an eighth P-type digital transistor switching transmission of the pin high potential voltage according to the third output signal;
an N-type ninth digital transistor switching transmission of the pin low potential voltage according to the first output signal;
a P-type tenth digital transistor switching transmission of the pin high potential voltage according to the fourth output signal;
An N-type 11th digital transistor switching transmission of the pin low potential voltage according to the fourth output signal.
A light emitting diode display comprising a.
According to claim 2,
The control circuit part,
An integrated level shifter connected between a pin high potential voltage and a pin low potential voltage and generating first and second output signals respectively switching the first and second transistors using image data, a programming signal, and a light emitting signal. include,
The integrated level shifter,
an N-type first digital transistor switching transmission of the first output signal according to the light emitting signal;
a P-type second digital transistor for switching transmission of the first output signal according to the programming signal;
a third N-type digital transistor switching transmission of the image data according to the programming signal;
a P-type fourth digital transistor switching transmission of the pin high potential voltage according to the first output signal or the image data;
an N-type fifth digital transistor for switching transmission of the pin low potential voltage according to the first output signal or the image data;
a sixth P-type digital transistor switching transmission of the pin high potential voltage according to the light emitting signal;
a P-type seventh digital transistor switching transmission of the pin high potential voltage according to the second output signal;
An N-type eighth digital transistor switching transmission of the pin low potential voltage according to the second output signal.
A light emitting diode display comprising a.
According to claim 2,
Further comprising a third transistor connected between the anode and the cathode of the light emitting diode,
The first and third transistors are N type, and the second transistor is P type.
According to claim 6,
a fourth N-type transistor for switching a connection between a first data signal and a gate of the first transistor according to a first programming signal;
an N-type fifth transistor for switching a connection between a second data signal and a source of the first transistor according to a second programming signal;
A first capacitor connected between the gate and the source of the first transistor
A light emitting diode display device further comprising a.
According to claim 6,
a fourth N-type transistor for switching a connection between a first data signal and a gate of the first transistor according to a programming signal;
an N-type fifth transistor for switching a connection between a second data signal and a source of the first transistor according to the programming signal;
A first capacitor connected between the gate and the source of the first transistor
A light emitting diode display device further comprising a.
According to claim 6,
a fourth N-type transistor for switching a connection between a data signal and the gate of the first transistor according to a programming signal;
an N-type fifth transistor for switching a connection between a reference signal and a source of the first transistor according to a sense signal;
a first capacitor connected between the gate of the first transistor and the drain of the fifth transistor;
A light emitting diode display device further comprising a.
According to claim 2,
The control circuit part,
a level shifter connected between a pin high potential voltage and a pin low potential voltage and generating first and second output signals using first and second image data, a programming signal, and an enable signal;
A latch connected between the pin high potential voltage and the pin low potential voltage and generating third and fourth output signals respectively switching the first and second transistors using the first and second output signals.
including,
The level shifter,
a first digital transistor for switching a connection between the pin high potential voltage and a drain of a third digital transistor according to the first output signal;
a second digital transistor for switching a connection between the pin high potential voltage and the drain of a fourth digital transistor according to the second output signal;
the third digital transistor for switching a connection between the drain of the first digital transistor and the drain of the ninth digital transistor according to the first output signal;
the fourth digital transistor switching a connection between the drain of the second digital transistor and the drain of the ninth digital transistor according to the second output signal;
a fifth digital transistor for switching a connection between the drain of the first digital transistor and the drain of the ninth digital transistor according to the voltage of the first electrode of the first capacitor;
a sixth digital transistor for switching a connection between the drain of the second digital transistor and the drain of the ninth digital transistor according to the voltage of the first electrode of the second capacitor;
a seventh digital transistor for switching a connection between the first image data and the gate of the fifth digital transistor according to the programming signal;
an eighth digital transistor for switching a connection between the second image data and the gate of the sixth digital transistor according to the programming signal;
the ninth digital transistor for switching a connection between sources of the third to sixth digital transistors and the pin low potential voltage according to the enable signal;
the first capacitor connected between the source of the seventh digital transistor and the pin low potential voltage;
The second capacitor connected between the source of the eighth digital transistor and the pin low potential voltage
A light emitting diode display comprising a.
According to claim 2,
The control circuit part,
a level shifter connected between a pin high potential voltage and a pin low potential voltage and generating an output signal using image data, a programming signal, and a precharge signal;
A latch connected between the pin high potential voltage and the pin low potential voltage and generating third and fourth output signals respectively switching the first and second transistors using the output signal.
including,
The level shifter,
a first digital transistor for switching a connection between the pin high potential voltage and a drain of a third digital transistor according to the precharge signal;
a second digital transistor for switching a connection between the pin high potential voltage and the drain of a fourth digital transistor according to the voltage of the first electrode of the second capacitor;
the third digital transistor switching a connection between the drain of the first digital transistor and the drain of the sixth digital transistor according to the precharge;
the fourth digital transistor for switching a connection between the drain of the second digital transistor and the pin low potential voltage according to the voltage of the first electrode of the second capacitor;
a fifth digital transistor for switching a connection between the image data and the gate of the sixth digital transistor according to the programming signal;
the sixth digital transistor switching the connection between the source of the third digital transistor and the pin low potential voltage according to the voltage of the first electrode of the first capacitor;
a first capacitor coupled between the source of the fifth digital transistor and the pin low potential voltage;
The second capacitor connected between the gate of the second digital transistor and the pin low potential voltage
A light emitting diode display comprising a.
According to claim 1,
A third transistor connected between an anode of the light emitting diode and a test voltage;
The at least one current source,
A first transistor connected between the light emitting diode and the light emitting high potential voltage and being one of N-type and P-type;
A cathode of the light emitting diode is connected to a light emitting low potential voltage.
According to claim 12,
The control circuit part,
a latch connected between the digital high potential voltage and the digital low potential voltage and generating first and second output signals using image data and programming signals;
A level shifter connected between a pin high potential voltage and a pin low potential voltage and generating a third output signal for switching the first transistor using the first and second output signals.
A light emitting diode display comprising a.
According to claim 12,
The control circuit part,
A light emitting diode display device comprising: an integrated level shifter connected between a pin high potential voltage and a pin low potential voltage and generating a first output signal for switching the first transistor using image data, a programming signal, and a light emitting signal.
According to claim 12,
a fourth N-type transistor for switching a connection between a first data signal and a gate of the first transistor according to a first programming signal;
an N-type fifth transistor for switching a connection between a second data signal and a source of the first transistor according to a second programming signal;
A first capacitor connected between the gate and the source of the first transistor
A light emitting diode display device further comprising a.
According to claim 12,
a fourth N-type transistor for switching a connection between a first data signal and a gate of the first transistor according to a programming signal;
an N-type fifth transistor for switching a connection between a second data signal and a source of the first transistor according to the programming signal;
A first capacitor connected between the gate and the source of the first transistor
A light emitting diode display device further comprising a.
According to claim 12,
a fourth N-type transistor for switching a connection between a data signal and the gate of the first transistor according to a programming signal;
an N-type fifth transistor for switching a connection between a reference signal and a source of the first transistor according to a sense signal;
a first capacitor connected between the gate of the first transistor and the drain of the fifth transistor;
A light emitting diode display device further comprising a.
According to claim 12,
a fourth N-type transistor for switching a connection between the first output signal and a source of the first transistor according to a reference signal;
a fifth N-type transistor for switching a connection between the second output signal and the gate of the first transistor according to the reference signal;
a sixth P-type transistor for switching a connection between the emission high potential voltage and a source of the first transistor according to a first emission signal;
a seventh N-type transistor for switching a connection between the drain of the first transistor and the anode of the light emitting diode according to a second light emitting signal;
A first capacitor connected between the gate of the first transistor and the source of the first transistor
Including more,
The control circuit part,
A light emitting diode display comprising a latch connected between a digital high potential voltage and a digital low potential voltage and generating first and second output signals using image data and programming signals.
According to claim 12,
a fourth N-type transistor for switching a connection between the first output signal and the gate of the first transistor according to a reference signal;
a fifth N-type transistor for switching a connection between the second output signal and a source of the first transistor according to the reference signal;
a sixth P-type transistor for switching a connection between the emission high potential voltage and the drain of the first transistor according to a first emission signal;
a seventh N-type transistor for switching a connection between the source of the first transistor and the anode of the light emitting diode according to a second light emitting signal;
A first capacitor connected between the gate of the first transistor and the source of the first transistor
Including more,
The control circuit part,
A light emitting diode display comprising a latch connected between a digital high potential voltage and a digital low potential voltage and generating first and second output signals using image data and programming signals.
According to claim 1,
The at least one current source,
and a first transistor connected between the light emitting diode and the light emitting high potential voltage and being one of an N-type and a P-type.
According to claim 1,
The at least one current source,
and a second transistor connected between the light emitting diode and the light emitting low potential voltage and being the other one of the N type and the P type.

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