KR20220161819A - Atomic layer deposition system - Google Patents

Abstract

The present invention relates to an atomic layer deposition system. In the present invention, without taking unreasonable measures such as increasing the injection amount of process gas per unit time or the injection time of process gas on the side of the product producer, it is possible to effectively solve various serious problems caused by non-uniform formation of an atomic layer deposition film. According to the present invention, the atomic layer deposition system comprises: a process chamber having a substrate for atomic layer deposition and defining a process gas flow space surrounded by upper and lower inner walls so that process gas can flow from an injection part to an exhaust part; and a vacuum pump connected to the exhaust part side of the process chamber through a gas pumping line and pumping the process gas to the outside.

Description

Atomic layer deposition system {Atomic layer deposition system}

The present invention relates to an atomic layer deposition system, and more particularly, <the upper inner wall of a vacuum chamber defining a process gas flow space, the size of the process gas flow space may gradually decrease from the injection part to the exhaust part. tilted downward so that the process gas flow space is tilted upward so that the size of the process gas flow space gradually decreases from the injection part to the exhaust part. arranging measures>, <the inner wall of the upper side of the vacuum chamber defining the flow space of the process gas is tilted downward so that the size of the process gas flow space gradually decreases from the injection part to the exhaust part, Reducing the relative size of the process gas flow space on the exhaust side (i.e., forming a reduced size compared to the size on the injection side) by flexibly taking a measure of arranging the lower inner wall upward, and the like, through which, Even under circumstances in which the process gas passes through the injection part (ie, the process gas is first adsorbed on a part of the substrate for atomic layer deposition on the injection part side and undergoes a series of consumption processes), and reaches the exhaust part of the process chamber, By inducing the 'concentration per unit area' above the normal level to be maintained (that is, the process gas reaching the exhaust side reduces the concentration and In the end, without taking unreasonable measures such as increasing the injection amount per unit time of the process gas or increasing the injection time of the process gas on the side of the product producer, It relates to an atomic layer deposition system capable of effectively solving various serious problems caused by non-uniform formation of an atomic layer deposition film.

Recently, with the rapid development of semiconductor-related technologies, various types of atomic layer deposition systems are being widely developed/distributed.

For example, Korean Patent Publication No. 10-2006-13282 (Name: process gas exhaust method and atomic layer deposition method and atomic layer deposition apparatus using the same) (published on February 9, 2006), Korean Patent Publication No. 10-2017 -21210 (Name: Composition-matched curtain gas mixtures for edge uniformity adjustment in alternative ALD reactors) (published on February 27, 2017), Republic of Korea Patent No. 10-795487 (Name: Laminar flow control device and Chemical vapor deposition reactor equipped with the same) (published on Jan. 16, 2008), Korean Registered Patent No. 10-1536257 (name: horizontal flow deposition apparatus and deposition method using the same) (published on Jul. 13, 2015), US registered patent No. 5711811 (Name: Apparatus and method for thin film growth) (registered on January 27, 1998) discloses an example of atomic layer deposition systems according to the prior art in more detail.

On the other hand, under such a conventional system, as shown in FIG. 1, the atomic layer deposition system 1 is provided with an atomic layer deposition target substrate (W), process gas (eg, source gas A (G1), The process gas surrounded by the upper inner wall (T-CW) and the lower inner wall (B-CW) so that the source gas B (G2), purge gas (G3), etc.) can flow from the injection part (IY) to the exhaust part (OY). A process chamber (C) defining a flow space (CA), a gas storage container (5) for storing process gases, for example, source gas A (G1), source gas B (G2), purge gas (G3), etc. , In the state of having the gas supply opening/closing valve 6, while connecting the gas storage container 5 and the injection part IY of the process chamber C, according to the open/closed state of the gas supply opening/closing valve 6, A gas supply guideline 9 for supplying source gas A (G1), source gas B (G2), purge gas (G3), etc. stored in the gas storage container (5) to the process chamber (C) side, the process chamber ( While connected to the exhaust part (OY) side of C), process gases inside the process chamber (C) supplied through the gas supply guide line (9), that is, source gas A (G1) and source gas B (G2) ), the vacuum pump 4 for pumping the purge gas (G3) to the outside, the gas supply shut-off valve 6 and the vacuum pump 4 electrically wired or wirelessly connected, the gas supply shut-off valve 6, The process controller 8 and the like that control the vacuum pump 4 and the like are systematically combined. In this case, an injection baffle 7 (baffle) may be additionally disposed in the injection part IY of the process chamber C, and an exhaust baffle 3 may be disposed in the exhaust part OY of the process chamber C. can be placed further.

Under this circumstance, the process controller 8 side controls the open/closed state of the gas supply on/off valve 6, the pumping state of the vacuum pump 4, etc. ), and adsorbing the source gas A (G1) to the surface of the substrate (W)>, <Supplying the purge gas P (G3) into the process chamber (C), the source gas A ( Step of removing unnecessary reaction residues, unnecessary physical binding materials, etc. of G1), <supplying source gas B (G2) into the process chamber (C), and supplying the corresponding source gas B (G2) to the substrate (W) adsorbing on the surface of the source gas>, <step of supplying the purge gas P(G3) into the process chamber C to remove unnecessary reaction residues and unnecessary physically bound substances from the source gas B(G2)>, etc. An atomic layer deposition film having a desired thickness is formed on the atomic layer deposition target substrate W by repeating the unit cycle of the atomic layer deposition process consisting of a plurality of times (eg, 10 unit cycles to 1000 unit cycles).

Under this conventional system, the process gas flow space (eg, source gas A (G1), source gas B (G2)) from the injection part (IY) side to the exhaust part (OY) side of the process chamber (C). CA), the mechanism of being deposited on the substrate (W) for atomic layer deposition is shown.

However, in this way, when the process gas flows through the process gas flow space CA from the injection part IY side to the exhaust part OY side of the process chamber C and is deposited on the substrate W for atomic layer deposition, the corresponding On the process gas side, before reaching the exhaust part (OY) of the process chamber (C), there is no choice but to show a mechanism in which the gas is first adsorbed to and consumed by a part of the atomic layer deposition target substrate (W) on the injection part (IY) side.

Of course, in this way, when the process gas (eg, source gas A (G1), source gas B (G2)) is first adsorbed and consumed by a part of the atomic layer deposition target substrate (W) on the injection part (IY) side, the exhaust part The concentration of the process gas in the process gas flow space CA on the (OY) side inevitably becomes very low, and eventually, the amount of the process gas adsorbed to the other part of the substrate W on the OY side is the injection Compared to the negative (IY) side, there is no choice but to significantly decrease.

Naturally, under this circumstance, on the side of the atomic layer deposition film to be deposited/formed on the substrate W to be deposited/formed for atomic layer deposition, depending on its location (that is, depending on whether it is on the inlet (IY) side or the exhaust port (OY) side), very It is inevitable to show uneven quality, and eventually, unless special measures are taken, the product producer has no choice but to bear various serious damages caused by it.

As one way to solve this problem, a detour measure to increase the injection amount per unit time of the process gas (eg, source gas A (G1), source gas B (G2)) or increase the injection time of the process gas this may be explored.

However, in this way, when the injection amount per unit time of the process gas (eg, source gas A (G1), source gas B (G2)) is increased, or the injection time of the process gas is increased, the product producer side Another serious problem in that the overall production cost is significantly increased due to a significantly longer process time or excessive consumption of process gas is inevitable.

In particular, when the injection amount per unit time of the process gas (eg, source gas A (G1), source gas B (G2)) is increased or the injection time of the process gas is increased, correspondingly, the purge gas P The injection amount and injection time of (G3) are also forced to increase significantly, and in the end, on the product producer side, the overall process time is greatly lengthened or the overall production cost is drastically increased due to excessive consumption of purge gas. So you have no choice but to accept it.

Korean Patent Publication No. 10-2016-105497 (Name: Film deposition using spatial atomic layer deposition or pulsed chemical vapor deposition) (published on September 6, 2016) Korean Patent Publication No. 10-2006-13282 (Title: process gas exhaust method, atomic layer deposition method and atomic layer deposition apparatus using the same) (published on February 9, 2006) Korean Patent Publication No. 10-2017-21210 (Name: Composition-matched curtain gas mixtures for edge uniformity adjustment in alternative ALD reactors) (published on February 27, 2017) Republic of Korea Patent Registration No. 10-795487 (Name: Laminar Flow Control Device and Chemical Vapor Deposition Reactor equipped with the same) (Announced on January 16, 2008) Republic of Korea Patent Registration No. 10-1536257 (Name: Horizontal flow deposition apparatus and deposition method using the same) (Announced on July 13, 2015) US Patent Registration No. 5711811 (Name: Apparatus and method for thin film growth) (registered on January 27, 1998)

Accordingly, an object of the present invention is to arrange an upper inner wall of a vacuum chamber defining a process gas flow space by tilting it downward so that the size of the process gas flow space gradually decreases from the injection part to the exhaust part. >, <Measures for arranging the lower inner wall of the vacuum chamber defining the process gas flow space upward so that the size of the process gas flow space gradually decreases from the injection part to the exhaust part>, <process gas flow space> The upper inner wall of the vacuum chamber defining the flow space of is tilted downward so that the size of the process gas flow space gradually decreases from the injection part to the exhaust part, and the lower inner wall is tilted upward. by flexibly taking measures> to induce a relative size reduction of the process gas flow space on the exhaust side (ie, formation of a reduced size compared to the size on the inlet side), through which the process gas passes through the inlet side (That is, after the process gas is first adsorbed on a part of the substrate for atomic layer deposition on the injection part side and undergoes a series of consumption processes), even under the circumstances of reaching the exhaust part of the process chamber, 'concentration per unit area' above a certain level By inducing to maintain (that is, the processing gas reaching the exhaust side constant through the reduction of the surrounding activity space due to the size reduction of the process gas flow space, similar to the concentration on the injection side) In the end, it is due to the non-uniformity of the atomic layer deposition film without taking unreasonable measures such as increasing the injection amount of process gas per unit time or the process gas injection time on the side of the product producer. It helps to effectively solve various serious problems.

Other objects of the present invention will become more apparent from the following detailed description and accompanying drawings.

In order to achieve the above object, in the present invention, a process chamber including a substrate for atomic layer deposition and defining a process gas flow space surrounded by an upper inner wall and a lower inner wall so that process gas can flow from the injection part to the exhaust part, and ; and a vacuum pump that is connected to the exhaust side of the process chamber through a gas pumping line and pumps the process gas to the outside, and the inner wall of the upper side of the vacuum chamber has the size of the process gas flow space doubled from the injection part. Disclosed is an atomic layer deposition system characterized in that it is disposed inclined downward so as to gradually decrease toward the base.

In another aspect of the present invention, a process chamber including a substrate for atomic layer deposition and defining a process gas flow space surrounded by an upper inner wall and a lower inner wall so that process gas can flow from the injection part to the exhaust part; A vacuum pump is connected to the exhaust side of the process chamber through a gas pumping line and pumps the process gas to the outside, and the lower inner wall of the vacuum chamber has a size larger than that of the injection part. Disclosed is an atomic layer deposition system characterized in that it is disposed inclined upward so as to gradually decrease towards the base.

Furthermore, in another aspect of the present invention, a process chamber having an atomic layer deposition target substrate and defining a process gas flow space surrounded by upper and lower inner walls so that process gas can flow from the injection part to the exhaust part; and a vacuum pump that is connected to the exhaust side of the process chamber through a gas pumping line and pumps the process gas to the outside, and the inner wall of the upper side of the vacuum chamber has the size of the process gas flow space doubled from the injection part. The lower inner wall of the vacuum chamber is inclined upward so that the size of the process gas flow space gradually decreases from the injection part to the exhaust part. Disclosed is an atomic layer deposition system characterized in that.

In the present invention, <Measures for arranging the upper inner wall of the vacuum chamber defining the process gas flow space downward so that the size of the process gas flow space gradually decreases from the injection part to the exhaust part>, <Process Measures to tilt the lower inner wall of the vacuum chamber defining the gas flow space upward so that the size of the process gas flow space gradually decreases from the injection part to the exhaust part>, <Process gas flow space Measures of arranging the upper inner wall of the vacuum chamber defined by tilting it downward and tilting the lower inner wall upward so that the size of the process gas flow space gradually decreases from the injection part to the exhaust part> etc. Since the relative size reduction of the process gas flow space on the exhaust side (ie, formation of a reduced size compared to the size on the injection side) is induced by flexibly taking (i.e., first adsorbed on a part of the substrate for atomic layer deposition on the injection part side and undergoing a series of consumption processes), even under the circumstances of reaching the exhaust part of the process chamber, 'concentration per unit area' above a certain level is achieved. It can be maintained normally (that is, on the side of the process gas reaching the exhaust side, through the reduction of the surrounding activity space due to the size reduction of the process gas flow space, the concentration similar to that of the injection part can be maintained constant, ), after all, on the side of the product producer, without taking unreasonable measures such as increasing the injection amount of process gas per unit time or increasing the injection time of process gas, various serious problems due to the non-uniformity of the atomic layer deposition film are formed. You can effectively solve problems.

1 is an exemplary view conceptually showing an atomic layer deposition system according to the prior art.
2 is an exemplary diagram conceptually illustrating an atomic layer deposition system according to an embodiment of the present invention.
3 is an exemplary view conceptually showing the shape of a baffle for exhaust according to the present invention;
4 is an exemplary diagram conceptually illustrating an atomic layer deposition system according to another embodiment of the present invention.
5 to 8 conceptually illustrate an atomic layer deposition system according to another embodiment of the present invention.

Hereinafter, an atomic layer deposition system according to the present invention will be described in more detail with reference to the accompanying drawings.

As shown in FIG. 2, the atomic layer deposition system 100 according to an embodiment of the present invention includes a substrate W for atomic layer deposition, and a process gas (eg, source gas A (G1), source gas A (G1), The process gas flow surrounded by the upper inner wall (T-CW) and the lower inner wall (B-CW) so that gas B (G2), purge gas (G3), etc.) can flow from the injection part (IY) to the exhaust part (OY). A process chamber (C) defining the space (CA), a gas storage container (105) for storing process gases, for example, source gas A (G1), source gas B (G2), purge gas (G3), etc. In the state in which the gas supply opening/closing valve 106 is provided, while connecting the gas storage container 105 and the injection part IY of the process chamber C, according to the open/closed state of the gas supply opening/closing valve 106, the gas A gas supply guide line 109 for supplying source gas A (G1), source gas B (G2), purge gas (G3), etc. stored in the storage container 105 to the process chamber (C) side, a gas pumping line ( 102), the process gas inside the process chamber C supplied through the gas supply guide line 109 while being connected to the exhaust part OY side of the process chamber C, that is, the source gas A (G1 ), the vacuum pump 104 for pumping the source gas B (G2), the purge gas (G3), etc. to the outside, while electrically wired or wirelessly connected to the gas supply opening/closing valve 106 and the vacuum pump 104, the gas A process controller 108 that controls the supply opening/closing valve 106 and the vacuum pump 104 is systematically combined.

In this case, an injection baffle 7 (baffle) may be additionally disposed in the injection part IY of the process chamber C, and an exhaust baffle 3 may be disposed in the exhaust part OY of the process chamber C. It may be additionally disposed, and the vacuum pump 104 side may take a structure connected to the exhaust baffle 103 through the gas pumping line 102.

At this time, in the present invention, the process chamber (C) so that the process gas supplied to the inside of the process chamber (C) can pass through the surface of the substrate (W) to be atomic layer deposition in a laminar flow or Knudsen flow ( Measures are taken to narrow the inner width (H) of C) to 1 mm to 10 mm.

Even under this circumstance, the process controller 108 side controls the open/closed state of the gas supply on/off valve 106, the pumping state of the vacuum pump 104, etc., for example, <source gas A (G1) to the process chamber ( Supplying the source gas A (G1) to the surface of the substrate (W) by supplying it to the inside of C), <Supplying the purge gas P (G3) into the process chamber (C) to adsorb the source gas A (G1) on the surface of the substrate (W)> Step of removing unnecessary reaction residues, unnecessary physical bonding materials, etc. of (G1), <supplying source gas B (G2) into the process chamber (C), and supplying the corresponding source gas B (G2) to the substrate (W ), <Step of supplying purge gas P(G3) to the inside of the process chamber (C) to remove unnecessary reaction residues, unnecessary physically bound substances, etc. of source gas B(G2)> An atomic layer deposition film having a desired thickness is formed on the atomic layer deposition target substrate W by repeating the unit cycle of the atomic layer deposition process consisting of the above and the like a plurality of times (eg, 10 unit cycles to 1000 unit cycles).

Of course, even under the framework of the present invention, the process gas (eg, source gas A (G1), source gas B (G2)) side flows from the injection part (IY) side to the exhaust part (OY) side of the process chamber (C). While flowing through the gas flow space CA, a mechanism of being deposited on the substrate W for atomic layer deposition is shown.

As such, when the process gas flows through the process gas flow space CA from the injection part IY side of the process chamber C to the exhaust part OY side and is deposited on the substrate W for atomic layer deposition, the corresponding process gas On the side, before reaching the exhaust part OY of the process chamber C, there is no choice but to show a mechanism in which it is first absorbed and consumed by a part of the substrate W to be deposited on the atomic layer deposition target side of the injection part IY.

Of course, in this way, when the process gas (eg, source gas A (G1), source gas B (G2)) is first adsorbed and consumed by a part of the atomic layer deposition target substrate (W) on the injection part (IY) side, the exhaust part The concentration of the process gas in the process gas flow space CA on the (OY) side inevitably becomes very low, and eventually, the amount of the process gas adsorbed to the other part of the substrate W on the OY side is the injection Compared to the negative (IY) side, there is no choice but to significantly decrease.

Naturally, under this circumstance, on the side of the atomic layer deposition film to be deposited/formed on the substrate W to be deposited/formed for atomic layer deposition, depending on its location (that is, depending on whether it is on the inlet (IY) side or the exhaust port (OY) side), very It is inevitable to show uneven quality, and eventually, unless special measures are taken, the product producer has no choice but to bear various serious damages caused by it.

Under such a sensitive situation, in the present invention <the upper inner wall (T-CW) of the vacuum chamber (C) defining the process gas flow space (CA), the size of the process gas flow space (CA) is the injection part (IY ) to the exhaust part OY, so that it is gradually reduced toward the exhaust part OY.

Of course, under these measures, the size of the process gas flow space CA2 on the exhaust side can be formed relatively small compared to the process gas flow space CA1 on the injection side.

Naturally, under the circumstances that the process gas flow space CA2 on the exhaust side forms a relatively small size compared to the process gas flow space CA1 on the injection side (ie, the process gas flow space CA2 on the exhaust side is injected). Under a situation where the relative size is reduced compared to the process gas flow space (CA1) on the negative side), the process gas is first adsorbed on a part of the substrate (W) to be atomic layer deposition on the injection part (IY) side, and then undergoes a series of consumption processes , Even in a situation where the exhaust part (OY) of the process chamber (C) is reached, the process gas side through the reduction of the surrounding activity space due to the size reduction of the process gas flow space (CA2) on the exhaust part side, a certain level The above 'concentration per unit area' can be maintained normally.

Of course, in this way, through the reduction of the surrounding activity space due to the size reduction of the process gas flow space CA2 on the exhaust side on the process gas side, the 'concentration per unit area' above a certain level can be achieved on the exhaust side OY side. If it can be maintained normally, on the side of the process gas, it is possible to satisfy the 'amount adsorbed to the substrate (W) for atomic layer deposition from the exhaust part (OY)' almost similar / identical to that of the injection part (IY) side, , After all, under this circumstance, on the side of the atomic layer deposition film deposited/formed on the substrate W for atomic layer deposition, regardless of whether its formation position is on the inlet (IY) side or the exhaust port (OY) side, very uniform quality can be expressed.

In this way, in one embodiment of the present invention, the upper inner wall of the vacuum chamber defining the process gas flow space is tilted downward so that the size of the process gas flow space gradually decreases from the injection part to the exhaust part. Since the relative size of the process gas flow space on the exhaust side is reduced (that is, the formation of a reduced size compared to the size on the injection side) by flexibly taking a measure of arrangement>, under the implementation environment of the present invention, on the process gas side , Through the injection part side (that is, after being first adsorbed on a part of the substrate for atomic layer deposition on the injection part side and undergoing a series of consumption processes), even under the circumstances of reaching the exhaust part of the process chamber, the 'unit area' above a certain level It is possible to maintain the 'sugar concentration' normally (that is, on the process gas side reaching the exhaust side, through the reduction of the surrounding activity space due to the size reduction of the process gas flow space, the concentration similar to the concentration on the injection side is constant. In the end, on the side of the product producer, without taking unreasonable measures such as increasing the injection amount of process gas per unit time or increasing the injection time of process gas, it is possible to form non-uniformity of the atomic layer deposition film It is possible to effectively solve various serious problems caused by

On the other hand, as shown in FIG. 3, under the practice of the present invention, an exhaust baffle 103 (baffle) is additionally installed in the exhaust part OY of the process chamber C. In this case, the exhaust baffle 103 is further provided with exhaust inlet holes 103a, 103b, and 103c exposed toward the process gas flow space CA2 and an exhaust outlet hole 103e connected to the gas pumping line 102. do.

At this time, in the present invention, the size of the exhaust inlet holes 103a, 103b, and 103c (that is, the total size of the exhaust inlet holes 103a, 103b, and 103c) is smaller than the size of the exhaust outlet hole 103e. We will take unique measures to make it happen.

Of course, in this way, the size of the exhaust inlet holes 103a, 103b, and 103c (ie, the total size of all the exhaust inlet holes 103a, 103b, and 103c) is smaller than the size of the exhaust outlet hole 103e. Under circumstances, when the pumping action of the process gas is performed by the operation of the vacuum pump 104, the suction force of the vacuum pump 104 is applied to the exhaust inlet holes 103a, 103b, and 103c without any difficulty on the side of the exhaust outlet hole 103e. It works very evenly on all of them.

Naturally, due to the difference in size between the exhaust outflow hole 103e and the exhaust inlet holes 103a, 103b, and 103c, the suction force of the vacuum pump 104 passes through the exhaust outflow hole 103e, and the exhaust inlet holes 103a and 103b ,103c) Under the situation that it acts very uniformly on all, it is possible to maintain a very high pumping speed on the process gas side, and eventually, under the implementation environment of the present invention, on the product producer side, problems due to the lowering of the pumping speed of the process gas (For example, a problem in which an unexpected chemical vapor deposition process proceeds due to mixing of process gases (eg, source gas A and source gas B) can be easily avoided.

On the other hand, as shown in FIG. 4, in another embodiment of the present invention, the structure of the process chamber (C) is a process chamber platform in which independent process chambers each having an atomic layer deposition target substrate (W) are stacked in multiple layers. Changed measures to change> may be sought.

Of course, in this other embodiment of the present invention, each process chamber (C) <upper inner wall (T-CW) defining the process gas flow space (CA), the size of the process gas flow space (CA) is injected Relative size reduction of the process gas flow space (CA2) on the exhaust side (i.e., injection part Since the formation of a size reduced compared to the size of the side flow space CA1), the process gas side passes through the injection part (ie, it is first adsorbed to a part of the substrate for atomic layer deposition on the injection part side and consumes a series of After going through the process), even under the circumstances of reaching the exhaust part of the process chamber, it is possible to normally maintain a 'concentration per unit area' above a certain level. It is possible to effectively solve various serious problems caused by non-uniform formation of the atomic layer deposition film without taking unreasonable measures such as increasing the process gas injection time or increasing the injection time of the process gas.

On the other hand, as shown in FIG. 5, in another embodiment of the present invention, <the lower inner wall (B-CW) of the vacuum chamber (C) defining the flow space (CA) of the process gas, the corresponding process gas flow space A measure of tilting upward is taken so that the size of CA can gradually decrease from the injection part IY to the exhaust part OY.

Of course, under these measures, the size of the process gas flow space CA2 on the exhaust side can be formed relatively small compared to the process gas flow space CA1 on the injection side.

Naturally, under the circumstances that the process gas flow space CA2 on the exhaust side forms a relatively small size compared to the process gas flow space CA1 on the injection side (ie, the process gas flow space CA2 on the exhaust side is injected). Under a situation where the relative size is reduced compared to the process gas flow space (CA1) on the negative side), the process gas is first adsorbed on a part of the substrate (W) to be atomic layer deposition on the injection part (IY) side, and then undergoes a series of consumption processes , Even in a situation where the exhaust part (OY) of the process chamber (C) is reached, the process gas side through the reduction of the surrounding activity space due to the size reduction of the process gas flow space (CA2) on the exhaust part side, a certain level The above 'concentration per unit area' can be maintained normally.

Of course, in this way, through the reduction of the surrounding activity space due to the size reduction of the process gas flow space CA2 on the exhaust side on the process gas side, the 'concentration per unit area' above a certain level can be achieved on the exhaust side OY side. If it can be maintained normally, on the side of the process gas, it is possible to satisfy the 'amount adsorbed to the substrate (W) for atomic layer deposition from the exhaust part (OY)' almost similar / identical to that of the injection part (IY) side, , After all, under this circumstance, on the side of the atomic layer deposition film deposited/formed on the substrate W for atomic layer deposition, regardless of whether its formation position is on the inlet (IY) side or the exhaust port (OY) side, very uniform quality can be expressed.

In this way, in another embodiment of the present invention, <the lower inner wall of the vacuum chamber defining the flow space of the process gas is tilted upward so that the size of the process gas flow space gradually decreases from the injection part to the exhaust part. Since the relative size of the process gas flow space on the exhaust side is reduced (that is, the formation of a reduced size compared to the size on the injection side) by flexibly taking a measure of arrangement>, under the implementation environment of the present invention, on the process gas side , Through the injection part side (that is, after being first adsorbed on a part of the substrate for atomic layer deposition on the injection part side and undergoing a series of consumption processes), even under the circumstances of reaching the exhaust part of the process chamber, the 'unit area' above a certain level It is possible to maintain the 'sugar concentration' normally (that is, on the process gas side reaching the exhaust side, through the reduction of the surrounding activity space due to the size reduction of the process gas flow space, the concentration similar to the concentration on the injection side is constant. In the end, on the side of the product producer, without taking unreasonable measures such as increasing the injection amount of process gas per unit time or increasing the injection time of process gas, it is possible to form non-uniformity of the atomic layer deposition film It is possible to effectively solve various serious problems caused by

Meanwhile, as shown in FIG. 3 above, even under another embodiment of the present invention, an exhaust baffle 103 (baffle) is additionally installed in the exhaust part OY of the process chamber C. Even in this case, in the exhaust baffle 103, the exhaust inlet holes 103a, 103b, and 103c exposed toward the process gas flow space CA2 and the exhaust outlet hole 103e connected to the gas pumping line 102 are additionally provided. are provided

Even at this time, in the present invention, the size of the exhaust inlet holes 103a, 103b, and 103c (ie, the total size of the exhaust inlet holes 103a, 103b, and 103c) is larger than the size of the exhaust outlet hole 103e. We will devise unique measures to reduce it.

Of course, in this way, the size of the exhaust inlet holes 103a, 103b, and 103c (ie, the total size of all the exhaust inlet holes 103a, 103b, and 103c) is smaller than the size of the exhaust outlet hole 103e. Under circumstances, when the pumping action of the process gas is performed by the operation of the vacuum pump 104, the suction force of the vacuum pump 104 is applied to the exhaust inlet holes 103a, 103b, and 103c without any difficulty on the side of the exhaust outlet hole 103e. It works very evenly on all of them.

Naturally, due to the difference in size between the exhaust outflow hole 103e and the exhaust inlet holes 103a, 103b, and 103c, the suction force of the vacuum pump 104 passes through the exhaust outflow hole 103e, and the exhaust inlet holes 103a and 103b ,103c) Under the situation that it acts very uniformly on all, it is possible to maintain a very high pumping speed on the process gas side, and eventually, under the implementation environment of the present invention, on the product producer side, problems due to the lowering of the pumping speed of the process gas (For example, a problem in which an unexpected chemical vapor deposition process proceeds due to mixing of process gases (eg, source gas A and source gas B) can be easily avoided.

On the other hand, as shown in FIG. 6, in another embodiment of the present invention, the structure of the process chamber (C) is a process chamber platform in which independent process chambers each having an atomic layer deposition target substrate (W) are stacked in multiple layers. Changed measures to change to> may be devised.

Of course, in this other embodiment of the present invention, each process chamber (C) <lower inner wall (B-CW) defining the process gas flow space (CA), the size of the process gas flow space (CA) is injected Relative size reduction of the process gas flow space (CA2) on the exhaust side (i.e., injection part Since the formation of a size reduced compared to the size of the side flow space CA1), the process gas side passes through the injection part (ie, it is first adsorbed to a part of the substrate for atomic layer deposition on the injection part side and consumes a series of After going through the process), even under the circumstances of reaching the exhaust part of the process chamber, it is possible to normally maintain a 'concentration per unit area' above a certain level. It is possible to effectively solve various serious problems caused by non-uniform formation of the atomic layer deposition film without taking unreasonable measures such as increasing the process gas injection time or increasing the injection time of the process gas.

On the other hand, as shown in FIG. 7, in another embodiment of the present invention, <the upper inner wall T-CW of the vacuum chamber C defining the process gas flow space CA, the corresponding process gas flow space A measure of tilting downward so that the size of CA can gradually decrease from the inlet (IY) to the exhaust (OY) side>, <Vacuum chamber (C) defining the process gas flow space (CA) A measure of arranging the lower inner wall (B-CW) of the process gas flow space (CA) by tilting it upward so that the size of the process gas flow space (CA) gradually decreases from the injection part (IY) to the exhaust part (OY)> get drunk

Of course, even under these complex measures, the process gas flow space CA2 on the exhaust side can form a relatively small size compared to the process gas flow space CA1 on the injection side.

Naturally, under the circumstances that the process gas flow space CA2 on the exhaust side forms a relatively small size compared to the process gas flow space CA1 on the injection side (ie, the process gas flow space CA2 on the exhaust side is injected). Under a situation where the relative size is reduced compared to the process gas flow space (CA1) on the negative side), the process gas is first adsorbed on a part of the substrate (W) to be atomic layer deposition on the injection part (IY) side, and then undergoes a series of consumption processes , Even in a situation where the exhaust part (OY) of the process chamber (C) is reached, the process gas side through the reduction of the surrounding activity space due to the size reduction of the process gas flow space (CA2) on the exhaust part side, a certain level The above 'concentration per unit area' can be maintained normally.

Of course, in this way, through the reduction of the surrounding activity space due to the size reduction of the process gas flow space CA2 on the exhaust side on the process gas side, the 'concentration per unit area' above a certain level can be achieved on the exhaust side OY side. If it can be maintained normally, on the side of the process gas, it is possible to satisfy the 'amount adsorbed to the substrate (W) for atomic layer deposition from the exhaust part (OY)' almost similar / identical to that of the injection part (IY) side, , After all, under this circumstance, on the side of the atomic layer deposition film deposited/formed on the substrate W for atomic layer deposition, regardless of whether its formation position is on the inlet (IY) side or the exhaust port (OY) side, very uniform quality can be expressed.

In this way, in another embodiment of the present invention, <the upper inner wall of the vacuum chamber defining the flow space of the process gas is moved downward so that the size of the process gas flow space gradually decreases from the injection part to the exhaust part. Tilting Arrangement>, <Measures of arranging the lower inner wall of the vacuum chamber defining the process gas flow space upward so that the size of the process gas flow space gradually decreases from the injection part to the exhaust part> Since the relative size of the process gas flow space on the exhaust side is reduced (ie, the formation of a reduced size compared to the size on the injection side) by flexibly and complexly taking the etc., even under another implementation environment of the present invention, the process On the gas side, it passes through the injection part (ie, it is first adsorbed on a part of the substrate for atomic layer deposition on the injection part side and undergoes a series of consumption processes), and even under the circumstances that it reaches the exhaust part of the process chamber, 'more than a certain level' It is possible to maintain the 'concentration per unit area' normally (that is, on the process gas side reaching the exhaust side, through the reduction of the surrounding activity space due to the size reduction of the process gas flow space, the concentration similar to that of the injection part can be maintained. In the end, the non-uniformity of the atomic layer deposition film can be maintained without taking unreasonable measures, such as increasing the amount of injection of process gas per unit time or increasing the injection time of process gas on the part of the product producer. It is possible to effectively solve various serious problems caused by formation.

On the other hand, as shown in FIG. 3, even under another embodiment of the present invention, an exhaust baffle 103 (baffle) is additionally installed in the exhaust part OY of the process chamber C. Even in this case, in the exhaust baffle 103, the exhaust inlet holes 103a, 103b, and 103c exposed toward the process gas flow space CA2 and the exhaust outlet hole 103e connected to the gas pumping line 102 are additionally provided. are provided

Even at this time, in the present invention, the size of the exhaust inlet holes 103a, 103b, and 103c (ie, the total size of the exhaust inlet holes 103a, 103b, and 103c) is larger than the size of the exhaust outlet hole 103e. We will devise unique measures to reduce it.

Of course, in this way, the size of the exhaust inlet holes 103a, 103b, and 103c (ie, the total size of all the exhaust inlet holes 103a, 103b, and 103c) is smaller than the size of the exhaust outlet hole 103e. Under circumstances, when the pumping action of the process gas is performed by the operation of the vacuum pump 104, the suction force of the vacuum pump 104 is applied to the exhaust inlet holes 103a, 103b, and 103c without any difficulty on the side of the exhaust outlet hole 103e. It works very evenly on all of them.

Naturally, due to the difference in size between the exhaust outflow hole 103e and the exhaust inlet holes 103a, 103b, and 103c, the suction force of the vacuum pump 104 passes through the exhaust outflow hole 103e, and the exhaust inlet holes 103a and 103b ,103c) Under the situation that it acts very uniformly on all, it is possible to maintain a very high pumping speed on the process gas side, and eventually, even under another implementation environment of the present invention, on the product producer side, the pumping speed of the process gas can be reduced. It is possible to easily avoid the resulting problems (eg, a problem that an unexpected chemical vapor deposition process proceeds due to mixing of process gases (eg, mixing of source gas A and source gas B)).

On the other hand, as shown in FIG. 8, in another embodiment of the present invention, the structure of the process chamber (C) is a process chamber platform in which independent process chambers each having an atomic layer deposition target substrate (W) are stacked in multiple layers. Changed measures to change to> may be devised.

Of course, in this other embodiment of the present invention, each process chamber (C) <upper inner wall (T-CW) defining the process gas flow space (CA), the size of the process gas flow space (CA) is injected Measures of arranging the lower inner wall (B-CW) defining the process gas flow space (CA) so that it is gradually reduced from the part (IY) to the exhaust part (OY) Process gas flow space on the exhaust side by flexibly and complexly implementing measures such as tilting upward so that the size of the flow space (CA) can gradually decrease from the injection part (IY) to the exhaust part (OY). Since the relative size reduction of (CA2) is taken (ie, formation of a size reduced compared to the size of the flow space CA1 on the injection part side), the process gas side passes through the injection part side (ie, the atomic layer on the injection part side) After being first adsorbed on a part of the substrate to be deposited and undergoing a series of consumption processes), it is possible to maintain the 'concentration per unit area' above a certain level normally even under the circumstances of reaching the exhaust part of the process chamber, and eventually, product production On the subject side, without taking unreasonable measures such as increasing the injection amount of process gas per unit time or increasing the injection time of process gas, various serious problems caused by non-uniform formation of atomic layer deposition can be effectively solved. do.

The present invention is not limited to a specific field, and exhibits useful effects in general in various types of thin film manufacturing processes.

And, in the foregoing, although specific embodiments of the present invention have been described and illustrated, it is obvious that the present invention is likely to be practiced with various modifications by those skilled in the art.

Such modified embodiments should not be individually understood from the technical spirit or viewpoint of the present invention, and such modified embodiments should fall within the scope of the appended claims of the present invention.

W: Substrate for atomic layer deposition
C: process chamber
CA: process gas flow space
IY: inlet
OY: Exhaust
CA1: Process gas flow space on the inlet side
CA2: Process gas flow space on the exhaust side
1,100: atomic layer deposition system
2,102: gas pumping line
3,103: baffle for exhaust
4,104: vacuum pump
5,105: gas storage container
6,106: gas supply opening and closing valve
7,107: injection baffle
8,108: process controller
9,109: gas supply line

Claims (5)

a process chamber having a substrate for atomic layer deposition and defining a process gas flow space surrounded by an upper inner wall and a lower inner wall so that process gas can flow from the injection part to the exhaust part;
A vacuum pump connected to the exhaust side of the process chamber through a gas pumping line and pumping the process gas to the outside;
The atomic layer deposition system, characterized in that the upper inner wall of the vacuum chamber is inclined downward so that the size of the process gas flow space gradually decreases from the injection part to the exhaust part. a process chamber having a substrate for atomic layer deposition and defining a process gas flow space surrounded by an upper inner wall and a lower inner wall so that process gas can flow from the injection part to the exhaust part;
A vacuum pump connected to the exhaust side of the process chamber through a gas pumping line and pumping the process gas to the outside;
The atomic layer deposition system, characterized in that the lower inner wall of the vacuum chamber is inclined upward so that the size of the process gas flow space gradually decreases from the injection part to the exhaust part. a process chamber having a substrate for atomic layer deposition and defining a process gas flow space surrounded by an upper inner wall and a lower inner wall so that process gas can flow from the injection part to the exhaust part;
A vacuum pump connected to the exhaust side of the process chamber through a gas pumping line and pumping the process gas to the outside;
The upper inner wall of the vacuum chamber is inclined downward so that the size of the process gas flow space gradually decreases from the injection part to the exhaust part, and the lower inner wall of the vacuum chamber is disposed to reduce the size of the process gas flow space. An atomic layer deposition system, characterized in that disposed inclined upward so that the size can gradually decrease from the injection part to the exhaust part. The method according to any one of claims 1 to 3, wherein an exhaust inlet hole exposed toward the process gas flow space and an exhaust outlet hole connected to the gas pumping line are installed in the exhaust part of the process chamber. An atomic layer deposition system further comprising an exhaust baffle, wherein a size of the exhaust inlet hole is smaller than a size of the exhaust outlet hole. The method of any one of claims 1 to 3, wherein the process gas passes through the surface of the substrate for atomic layer deposition in a laminar flow or a Knudsen flow at the side of the process chamber. An atomic layer deposition system characterized by having an internal width of ~10 mm.

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