KR20220147480A - Light emitting element and display device including the same - Google Patents

Abstract

According to the present invention, a light emitting element comprises: a light emitting cell that emits first color light and second color light; an insulating layer covering the light emitting cell and having a flat upper surface; a first trench exposing a first semiconductor layer; a second trench exposing a second semiconductor layer; a first electrode in contact with the first semiconductor layer; a second electrode in contact with the second semiconductor layer; and a third electrode in contact with the third semiconductor layer.

Description

A light emitting device and a display device including the same

An exemplary embodiment of the present disclosure relates to a light emitting device and a display device including the same.

Micro LED displays are made by arranging hundreds of thousands of LEDs with a size of several to hundreds of um or more on a substrate, and each micro LED functions as a sub-pixel of the display and has high efficiency, high resolution, and high resolution compared to existing LCD or OLED displays. . When manufacturing such a micro LED display, it is necessary to transfer from the substrate (silicon or sapphire) on which the LED chip is grown to the display substrate (glass). A process that needs to be repaired may be added, thereby increasing manufacturing cost. Therefore, for the commercialization of micro LED displays, a high-yield transfer technology that can overcome the transfer limitations of the conventional pick and place method and requires little additional transfer or repair is required.

Currently, various types of fluidic self-assembly (FSA) technology are being developed for such high-yield/low-cost micro LED transfer. When manufacturing a micro LED display device in this way, in order to realize full color, the RGB method that transfers micro LEDs emitting red, green, and blue light respectively, or red sub-pixels after transferring all the micro LEDs emitting blue light and a method of using a color conversion layer in which each color conversion layer is disposed on a green sub-pixel.

According to an exemplary embodiment, a light emitting device capable of emitting two or more color lights is provided.

According to an exemplary embodiment, there is provided a light emitting device in which the heights of a plurality of electrodes disposed on the light emitting device are substantially the same as each other or are substantially close to each other.

A light emitting device according to an exemplary embodiment includes a first semiconductor layer, a first active layer emitting a first color light, a second semiconductor layer, a second active layer emitting a second color light, and a third semiconductor layer, The light emitting cells are sequentially arranged from above, the insulating layer covering the light emitting cells and having a flat upper surface, the first trench penetrating the insulating layer to expose the first semiconductor layer, and the insulating layer exposing the second semiconductor layer a second trench, a first electrode extending to the upper surface of the insulating layer along the first trench while in contact with the first semiconductor layer, a second electrode extending to the upper surface of the insulating layer along the second trench in contact with the second semiconductor layer It may include an electrode and a third electrode in contact with the third semiconductor layer.

In addition, the insulating layer is disposed on the first insulating layer covering the upper surface of the light emitting cell, the side surface of the first trench and the side surface of the second trench, and the first insulating layer, the first electrode extending out of the first trench and a second insulating layer configured to reduce a difference between the height of the portion and the height of the portion of the second trench extending out of the second trench.

In addition, the height of the first electrode and the height of the second electrode are substantially the same as a predetermined height from the lower surface of the light emitting element, or the height of the first electrode and the height of the second electrode and the predetermined height and the height difference are the thickness of the light emitting element may be less than 10% of

Further, a third trench penetrating through the insulating layer and a partial region of the light emitting cell to expose the third semiconductor layer, wherein the third electrode is in contact with the third semiconductor layer and along the third trench, the upper surface of the insulating layer can be extended to

In addition, the first active layer may emit a first color light, the second active layer may emit a second color light, and only one of the first active layer or the second active layer may be disposed in a portion of the light emitting cell viewed from above.

Alternatively, the first semiconductor layer and the third semiconductor layer have the same polarity, the second semiconductor layer has a different polarity from the first semiconductor layer, the first electrode and the third electrode have the same polarity, and the second electrode has the second electrode. It may have a polarity opposite to that of the first electrode.

Further, as the second electrode is connected to the first electrode, the light emitting cell may emit the first color light, and as the second electrode is connected to the third electrode, the light emitting cell may emit the second color light.

Alternatively, the second semiconductor layer includes a first sub-semiconductor layer and a second sub-semiconductor layer, the second trench includes a first sub-trench and a second sub-trench spaced apart from each other, and the first sub-trench includes an insulating layer The first sub-semiconductor layer is exposed therethrough, the second sub-trench penetrates the insulating layer and a partial region of the light emitting cell to expose the second sub-semiconductor layer, and the second electrode includes the first sub-electrode and the second spaced apart from each other. a sub-electrode, wherein the first sub-electrode is in contact with the first sub-semiconductor layer and extends to the upper surface of the insulating layer along the first sub-trench, and the second sub-electrode is in contact with the second sub-semiconductor layer and is in contact with the second sub-trench It may extend along the trench to the upper surface of the insulating layer.

In addition, the second sub-semiconductor layer may have a width greater than that of the first sub-semiconductor layer.

Alternatively, the first electrode is electrically connected to the first sub-electrode so that the first active layer emits the first color light, and the third electrode is electrically connected to the second sub-electrode so that the second active layer emits the second color light. can do.

The position of the first electrode or the first sub-electrode of the light emitting device disposed in one direction is the position of the second sub electrode or the third sub electrode of the light emitting device disposed in a direction rotated by 180 degrees in one direction. It may not overlap with the location.

Further, the light emitting cell includes a first color light emitting structure and a second color light emitting structure, and a second semiconductor layer is commonly included in the first color light emitting structure and the second color light emitting structure, and the first color light A bonding layer may not be disposed between the emitting structure and the second color light emitting structure.

Alternatively, it further comprises a DBR (Distributed Bragg Reflector) layer disposed between the first active layer and the second active layer, wherein the DBR layer has a reflectance of the first color light higher than a transmittance of the first color light, and a second color light. A transmittance of the light may be higher than a reflectance of the second color light.

And, the third electrode is disposed on the lower surface of the light emitting cell, the second electrode is electrically connected to the first electrode so that the first active layer emits the first color light, and the second electrode is electrically connected to the third electrode so that the second active layer can emit a second color light.

Alternatively, the light emitting cell may further include a third active layer emitting a third color light, and the first color light, the second color light, and the third color light may constitute one pixel.

And, the second electrode is disposed in the center of the light emitting device, the first electrode is a light emitting device symmetrical with respect to the center of the light emitting device.

For example, the planar shape of the light emitting device may be rotationally symmetric with respect to at least one angle.

For example, the light emitting device may have a circular, elliptical, or polygonal planar shape.

A display device according to an exemplary embodiment includes a plurality of type 1 light emitting devices and a plurality of light emitting devices having a different planar shape from the type 1 light emitting device and emitting a plurality of color lights different from those emitted by the first type light emitting device. A light emitting layer including a type 2 light emitting device, a substrate including a plurality of wells, and a driving layer including a plurality of transistors, the plurality of wells including first and second wells adjacent to each other, and the first well The first type light emitting device may be exclusively disposed in the , and the second type light emitting device may be exclusively disposed in the second well, and the first well and the second well may constitute one pixel.

The first well has a first depth, and the first depth is such that the first to third electrodes included in the first type light emitting device disposed in the first well are positioned at a substantially predetermined height from the lower surface of the substrate, respectively. The depth, or a depth such that the first to third electrodes each have a difference between a predetermined height and a height within 10% of the thickness of the first type light emitting device, the second well has a second depth, and the second depth is the second A depth such that at least one electrode included in the second type light emitting device disposed in the 2-well is substantially located at a predetermined height or a depth such that the predetermined height has a height difference within 10% of the thickness of the first type light emitting device can

A light emitting device according to an exemplary embodiment may emit two or more color lights.

Since the plurality of electrodes of the light emitting device according to the exemplary embodiment are positioned at substantially the same height in the direction of one surface of the light emitting device, it may be suitable for a transfer and bonding process, and may be suitable for manufacturing a display device.

Since the light emitting device according to the exemplary embodiment can emit light of two or more colors, full color can be realized by using at most two or less types of light emitting devices instead of three types when transferring the corresponding light emitting device. A degree of freedom may be increased in designing a planar shape and a planar shape of a light emitting device corresponding thereto.

1 is a plan view of a light emitting device according to an exemplary embodiment.
FIG. 2 is a cross-sectional view taken along line A-A' of the light emitting device of FIG. 1 .
3 is a cross-sectional view of a light emitting device according to an exemplary embodiment.
4 is a plan view of a light emitting device according to an exemplary embodiment.
5A is a cross-sectional view taken along line B-B' of the light emitting device of FIG. 4 .
FIG. 5B is a view illustrating that the light emitting device according to FIG. 5A is inserted into a well of a substrate.
FIG. 5C is a view illustrating that the light emitting device according to FIG. 5A is rotated 180 degrees and inserted into the well of the substrate.
6 is a plan view illustrating a light emitting device according to an exemplary embodiment.
7 is a cross-sectional view of the light emitting device of FIG. 6 taken along line CC'.
8 is a cross-sectional view illustrating a light emitting device according to an exemplary embodiment.
9 is a perspective view illustrating a substrate of a display device according to an exemplary embodiment.
10A is a diagram illustrating a type 1 light emitting device and a type 2 light emitting device disposed in a first well and a second well of a substrate of a display device according to an exemplary embodiment.
10B is a diagram illustrating a third type light emitting device and a fourth type light emitting device disposed in the third and fourth wells of a substrate of a display device according to another exemplary embodiment.
11 is a cross-sectional view illustrating a substrate of a display device according to an exemplary embodiment.
12A is a cross-sectional view of a display device according to an exemplary embodiment.
12B is a cross-sectional view illustrating that the display device according to an exemplary embodiment further includes a color conversion layer.
13 is a block diagram of an electronic device including a display device according to an exemplary embodiment.
Fig. 14 shows an example in which a display device according to an exemplary embodiment is applied to a mobile device.
Fig. 15 shows an example in which a display device according to an exemplary embodiment is applied to a vehicle.
16 illustrates an example in which a display device according to an exemplary embodiment is applied to augmented reality glasses or virtual reality glasses.
Fig. 17 shows an example in which a display device according to an exemplary embodiment is applied to a large-sized signage.
18 illustrates an example in which a display device according to an exemplary embodiment is applied to a wearable display.

Hereinafter, an embodiment will be described in detail with reference to the accompanying drawings. The described embodiments are merely exemplary, and various modifications are possible from these embodiments. In the following drawings, the same reference numerals refer to the same components, and the size of each component in the drawings may be exaggerated for clarity and convenience of description.

Hereinafter, what is described as "upper" or "upper" may include not only directly on in contact, but also on non-contacting. Likewise, references to “below” or “below” may include those directly below in contact as well as below in non-contact.

The singular expression includes the plural expression unless the context clearly dictates otherwise. Also, when a part "includes" a certain component, it means that other components may be further included, rather than excluding other components, unless otherwise stated.

The use of the term “above” and similar referential terms may be used in both the singular and the plural.

The meaning of “connection” may include not only a physical connection, but also an optical connection, an electrical connection, and the like.

In addition, the use of all exemplary terms (eg, etc.) is merely for describing the technical idea in detail, and unless limited by the claims, the scope of rights is not limited by these terms.

Terms such as first, 1-1, etc. may be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another.

The same or identical length units such as height, depth, and thickness may include differences within an error range recognized by those skilled in the art.

1 is a plan view of a light emitting device according to an exemplary embodiment, and FIG. 2 is a cross-sectional view taken along line A-A' of the light emitting device according to FIG. 1 .

1 and 2 , a light emitting device 10 according to an exemplary embodiment includes a first semiconductor layer 111 , a first active layer 151 emitting a first color light, and a second semiconductor layer 112 . , a second active layer 152 emitting a second color light, and a third semiconductor layer 113 , the light emitting cell 100 arranged in sequence from the top in this order, and the light emitting cell 100 while covering the upper portion The insulating layer 300 having a flat surface, the insulating layer 300 and the first trench 211 penetrating through a partial region of the light emitting cell 100 to expose the first semiconductor layer 111, the insulating layer 300, and the light emission A second trench 212 penetrating through a partial region of the cell 100 to expose the second semiconductor layer 112 , and the insulating layer 300 along the first trench 211 while in contact with the first semiconductor layer 111 . A first electrode 411 extending to the upper surface of A third electrode 413 in contact with the third semiconductor layer 113 may be included. The insulating layer 300 is formed on the first insulating layer 310 and the first insulating layer 310 covering the upper surface of the light emitting cell 100 , the side surface of the first trench 211 , and the side surface of the second trench 212 . It may include a second insulating layer 330 configured to reduce a difference between the height of the first electrode 411 and the height of the second electrode 412 , and the height of the first electrode 411 and the second insulating layer 330 . The height of the second electrode 412 may be substantially the same as a predetermined height from the lower surface of the light emitting device 10 , or a difference therebetween may be within 10% of the thickness of the light emitting device 10 .

In addition, the light emitting device 10 according to the exemplary embodiment further includes a third trench 213 penetrating through the insulating layer 300 and a partial region of the light emitting cell 100 to expose the third semiconductor layer 113 . The third electrode 413 may extend to the upper surface of the insulating layer along the third trench 213 while contacting the third semiconductor layer 113 .

When the height of each of the first electrode 411 and the second electrode 412 of the light emitting device 10 according to an exemplary embodiment is substantially the same, the convenience of the transfer process and the bonding process can be increased, Accordingly, it may be advantageous when manufacturing a display device. In addition, since the light emitting device 10 according to the exemplary embodiment can emit a plurality of color lights, the well planar shape and the corresponding light emitting device 10 when the transfer method is performed by fluidic self-assembly ) The degree of freedom for flat design can be increased.

Next, the light emitting device 10 will be described in detail.

The light emitting device 10 according to an exemplary embodiment includes a first semiconductor layer 111 , a first active layer 151 emitting a first color light, a second semiconductor layer 112 , and a second semiconductor layer 112 emitting a second color light. The light emitting cell 100 including the second active layer 152 and the third semiconductor layer 113 may be included, and may be sequentially disposed or arranged from top to bottom in this order. At least one of the first semiconductor layer 111 , the second semiconductor layer 112 , and the third semiconductor layer 113 may be formed of a group II-VI or group III-V compound semiconductor material. At least one of the first semiconductor layer 111 , the second semiconductor layer 112 , and the third semiconductor layer 113 serves to provide electrons and holes to the active layer 150 . To this end, the first semiconductor layer 111 may be doped with an n-type or a p-type, and the second semiconductor layer 112 may be doped with a conductivity type that is electrically opposite to that of the first semiconductor layer 111 . The first semiconductor layer 111 and the third semiconductor layer 113 may be doped with the same conductivity type. For example, the first semiconductor layer 111 may be doped with p-type, the second semiconductor layer 112 may be doped with n-type, and the first semiconductor layer 111 may be doped with n-type, and the second semiconductor layer 111 may be doped with n-type. The semiconductor layer 112 may be doped with p-type. When doping the second semiconductor layer 112 with n-type, for example, silicon (Si) may be used as a dopant, and when doping the first semiconductor layer 111 with p-type , for example, zinc (Zn) may be used as a dopant. At this time, the n-type doped second semiconductor layer 112 may provide electrons to the active layer 150 , and the p-type doped first semiconductor layer 111 may provide holes to the active layer 150 . can

The active layer 150 has a quantum well structure in which quantum wells are disposed between barriers. In the active layer 150 disposed between the two semiconductor layers among the semiconductor layers 110 , electrons and holes provided from the two semiconductor layers are recombined in the quantum well structure in the active layer 150 , and light may be emitted. For example, light may be emitted while electrons and holes provided from the first semiconductor layer 111 and the second semiconductor layer 112 are recombined in the quantum well structure in the first active layer 151 . The wavelength of light generated in the active layer 150 may be determined according to a band gap of a material constituting the quantum well in the active layer 150 . The active layer 150 may have a single quantum well structure or a multi-quantum well (MQW) structure in which multiple quantum wells and a plurality of barriers are alternately disposed. The thickness of the active layer 150 or the number of quantum wells in the active layer 150 may be appropriately selected in consideration of the driving voltage and luminous efficiency of the light emitting device 10 to be manufactured.

The active layer 150 may include a quantum barrier layer and a quantum well layer. For example, the quantum barrier layer may be formed of gallium nitride (GaN), and the quantum well layer may be formed of indium gallium nitride (In _x Ga _1-x N (0≤x≤1)). The quantum barrier layer or quantum well layer may be formed of various materials without being limited to the above example. The active layer 150 may have a structure in which quantum barrier layers and quantum well layers are alternately stacked N times (where N is a natural number equal to or greater than 1).

The light emitting cell 100 according to FIGS. 1 and 2 may be in the form of a light emitting cell 100 using the second semiconductor layer 112 as a common semiconductor layer. That is, a voltage may be applied between the first semiconductor layer 111 and the second semiconductor layer 112 to emit the first color light from the first active layer 151 , and the second active layer 152 may emit the second color light. A voltage may be applied between the second semiconductor layer 112 and the third semiconductor layer 113 to emit color light. The second semiconductor layer 112 commonly related to the emission of the first color light and the emission of the second color light may be referred to as a common semiconductor layer. The light emitting cell 100 may include a portion associated with emission of a first color light and a portion associated with emission of a second color light. The portion related to the first color light emission may include the first semiconductor layer 111 , the first active layer 151 , and the second semiconductor layer 112 , and the portion related to the second color light emission is the second semiconductor layer. It may include a layer 112 , a second active layer 152 , and a third semiconductor layer 113 . The portion related to emission of the first color light and the portion related to emission of the second color light may include the second semiconductor layer 112 in common. Since the second semiconductor layer 112 is used as a common semiconductor layer, a separate bonding layer may not be included between the portion related to emission of the first color light and the portion related to emission of the second color light. For example, the first semiconductor layer 111 and the third semiconductor layer 113 may each have the same polarity, and the second semiconductor layer 112 may have a polarity opposite to that of the first semiconductor layer 111 . can A first active layer 151 may be disposed between the first semiconductor layer 111 and the second semiconductor layer 112 , and a second active layer ( ) between the second semiconductor layer 112 and the third semiconductor layer 113 . 152) can be arranged. The first active layer 151 may emit a first color light, the second active layer 152 may emit a second color light, and the first color light and the second color light are different colors or different from each other. can have a wave. When the first semiconductor layer 111 and the second semiconductor layer 112 are electrically connected and a voltage is applied from the outside, the first color light may be emitted from the first active layer 151 . When the second semiconductor layer 112 and the third semiconductor layer 113 are electrically connected and a voltage is applied from the outside, the second color light may be emitted from the second active layer 152 . The emission of the first color light and the emission of the second color light may be independent of each other. In other words, only the first color light may be emitted according to the voltage application, only the second color light may be emitted, and both the first color light and the second color light may be emitted. For example, the first color light may be blue light (B), and the second color light may be green light (G). Blue light (B) may have a wavelength of about 420 nm to 495 nm, and green light (G) may have a wavelength of about 495 nm to 570 nm. However, the present invention is not limited thereto, and color light of a different color or wavelength may be emitted. For example, red light R may be emitted as one color light, and red light R may have a wavelength of about 620 nm to 750 nm. According to another example, the plurality of colored light is not limited to blue light (B), green light (G), and/or red light (R), but has a wavelength of about 380 nm to 450 nm Violet color light, Cyan color light having a wavelength of about 475 nm to 510 nm, Yellow color light having a wavelength of about 565 nm to 590 nm, and/or Orange having a wavelength of about 590 nm to 620 nm ) may be colored light. It may be desirable for the active layer disposed on the far side from the light exit direction to emit light of a longer wavelength than the active layer disposed on the near side. For example, if the direction in which the light exits is the upper part with respect to the light emitting device 10 , the wavelength of the second color light may be greater than the wavelength of the first color light. If the light exiting direction is lower with respect to the light emitting device 10 , the wavelength of the second color light may be smaller than the wavelength of the first color light.

Only one of the first active layer 151 or the second active layer 152 may be disposed on a portion of the plane of the light emitting cell 100 viewed from the upper portion of the light emitting device 10 . For example, referring to FIGS. 1 and 2 , only the second active layer 152 may be disposed near the center of the light emitting device 10 , and the region in which only the second active layer 152 is disposed is formed on the second light emitting plane ( SP2). The first active layer 151 and the second active layer 152 may be simultaneously disposed in the vicinity of the edge except for the center of the light emitting device 10 . A region in which the first active layer 152 is disposed except for the second emission plane SP2 may be referred to as a first emission plane SP1 . The first color light and the second color light may be emitted from the first emission plane SP1 , and only the second color light may be emitted from the second emission plane SP1 . However, the present invention is not limited thereto, and only the first active layer 151 may be disposed on the first emission plane SP1 , or only the first color light may be emitted from the first emission plane SP1 . If two or more active layers 150 are disposed on one light emitting plane, it may be preferable that the active layer disposed on the far side from the light exit direction emits light of a longer wavelength than the active layer disposed on the near side.

The light emitting device 10 according to an exemplary embodiment may further include a Distributed Bragg Reflector Layer (DBR layer) (not shown) between the first active layer 151 and the second active layer 152 . The DBR layer transmits the first color light to the upper portion of the light emitting device 10 so that the first color light emitted from the first active layer 151 is reabsorbed by the second active layer 152 and does not activate the second active layer 152 . It may be configured to be reflective. The DBR layer may be configured so that the second color light may be transmitted through the upper portion of the light emitting device 10 . The DBR layer may have a multilayer structure including a plurality of layers having the same height.

The first trench 211 , the second trench 212 , and the third trench 213 of the light emitting device 10 according to an exemplary embodiment penetrate the insulating layer 300 and a partial region of the light emitting cell 100 . and each may have a predetermined depth. A partial region of the light emitting cell 100 passing through each trench 210 may be different. For example, the first trench 211 may penetrate a partial region of the first semiconductor layer 111 , or may penetrate only the insulating layer 300 without penetrating a partial region of the light emitting cell 100 . . The second trench 212 may penetrate a partial region of the second semiconductor layer 112 , or may penetrate only the insulating layer 300 without penetrating a partial region of the light emitting cell 100 . The third trench 213 may pass through the first semiconductor layer 111 , the first active layer 151 , the second semiconductor layer 112 , and the second active layer 152 , and additionally a third semiconductor layer ( 113) may be penetrated. The first trench 211 , the second trench 212 , and the third trench 213 may be indented from the upper surface of the light emitting cell 100 in an inner direction of the light emitting cell 100 . Each of the first trench 211 , the second trench 212 , and the third trench 213 may be symmetric with respect to the central axis of the plane of the light emitting device 10 , but is not limited thereto. The second trench 212 may be located at the center of the plane of the light emitting device 10 , but is not limited thereto.

The first trench 211 , the second trench 212 , and the third trench 213 may include side surfaces and a bottom surface. The side surface may be parallel to the height direction of the light emitting element 10 , or may be an inclined surface having an inclination angle with respect to the height direction of the light emitting element 10 . For example, if the widths of the plurality of trenches 210 decrease as they move away from the upper surface of the light emitting cell 100 , side surfaces of the plurality of trenches 210 may be inclined surfaces. In this case, the area of the active layer removed or etched by the trench 210 may be reduced, so that the emission area may be increased. The depth of the trench 210 may be smaller than the height of the light emitting device 10 , and the bottom surface of the trench 210 may be in contact with one semiconductor layer 110 . One semiconductor layer 110 may be the first semiconductor layer 111 , the second semiconductor layer 112 or the third semiconductor layer 113 . For example, the first trench 211 may have a predetermined depth t ₁ of the insulating layer 300 to be in contact with the first semiconductor layer 111 , and the second trench 212 may have a second semiconductor layer. A predetermined depth t ₂ may be penetrated through the insulating layer 300 so as to be in contact with the 112 , and the third trench 213 may be in contact with the third semiconductor layer 113 so as to be in contact with the insulating layer 300 and light emission. It may have a predetermined depth t ₃ through a portion of the cell 100 . In order for the first trench 211 to contact the first semiconductor layer 111 , it may be necessary to etch the insulating layer 300 . However, the present invention is not limited thereto, and the first semiconductor layer 111 may be partially etched together with the insulating layer 300 . In order for the second trench 212 to contact the second semiconductor layer 112 , it may be necessary to etch the insulating layer 300 . However, the present invention is not limited thereto, and the second semiconductor layer 112 may be partially etched together with the insulating layer 300 . In order for the third trench 213 to contact the third semiconductor layer 113 , the third trench 213 includes the insulating layer 300 , the first semiconductor layer 111 , the first active layer 151 , and the second semiconductor layer. (112), the second active layer 152 may be formed by etching. However, the present invention is not limited thereto, and a partial thickness of the third semiconductor layer 113 may be etched to form the third trench 213 .

The light emitting device 10 according to an exemplary embodiment may include an insulating layer 300 having a flat upper surface while covering the light emitting cell 100 . The insulating layer 300 is formed on the first insulating layer 310 and the first insulating layer 310 covering the upper surface of the light emitting cell 100 , the side surface of the first trench 211 , and the side surface of the second trench 212 . It may include a second insulating layer 330 disposed to reduce a difference between the height of the first electrode 411 and the height of the second electrode 412 . The first insulating layer 310 is not limited to covering the side surface of the first trench 211 and the side surface of the second trench 212 , and may also cover side surfaces of a plurality of other trenches 210 . The first insulating layer 310 may cover not only the upper surface of the light emitting cell 100 but also the side surface of the light emitting cell 100 . Since the first insulating layer 310 is disposed to cover the side surfaces of the plurality of trenches 210 , one trench 210 may expose only one semiconductor layer 110 and one electrode ( 410 may be in electrical contact with only one semiconductor layer 110 . For example, the first electrode 411 of the first trench 211 may contact only the first semiconductor layer 111 , and the second electrode 412 of the second trench 212 may contact the second semiconductor layer 112 . ), and the third electrode 413 of the third trench 213 may contact only the third semiconductor layer 113 . The first insulating layer 310 may include an oxide or the like, and the insulating layer 300 may include a light-transmitting material. The transmissive material may be transparent, for example, the light transmittance may be substantially equal to or greater than about 85%. The light-transmitting material may mean a material having a light transmittance greater than about 85%. In addition, in order to reduce color distortion, a material having a transmittance difference of less than 10% in the entire visible light spectrum may be used. In addition, the light-transmitting material may include a transparent material.

The first electrode 411 of the light emitting device 10 according to the exemplary embodiment may extend to the upper surface of the insulating layer 300 along the first trench 211 while in contact with the first semiconductor layer 111 , , the second electrode 412 may extend to the upper surface of the insulating layer 300 along the second trench 212 while in contact with the second semiconductor layer 112 . The upper surface of the insulating layer 300 may mean the upper surface of the light emitting device 10, but is not limited thereto.

One electrode of the plurality of electrodes 410 may be in electrical contact with only one semiconductor layer of the plurality of semiconductor layers 110 . At least one of the first electrode 411 , the second electrode 412 , or the third electrode 413 may include a light-transmitting material, for example, the first electrode 411 and the second electrode 412 . Alternatively, at least one material of the third electrode 413 may be indium tin oxide (ITO) or the like. The transmissive material may be transparent, for example, the light transmittance may be substantially equal to or greater than about 85%.

Each of the first electrode 411 , the second electrode 412 , and the third electrode 413 may be disposed to extend along the corresponding trench 210 on the bottom surface and the side surface of the trench 210 . A portion of each of the first electrode 411 , the second electrode 412 , and the third electrode 413 extends around or outside the corresponding trench 210 on the insulating layer 300 or of the light emitting device 10 . It may be disposed on the upper surface. Alternatively, each of the first electrode 411 , the second electrode 412 , and the third electrode 413 may be said to extend onto the upper surface of the light emitting device 10 . However, the electrode 410 is not limited to being disposed on the trench 210 , and one of the first electrode 411 , the second electrode 412 , or the third electrode 413 is located below the light emitting device 10 . may be placed.

The first electrode 411 and the third electrode 413 may have the same polarity, and the second electrode 412 may have a polarity opposite to the polarity. For example, if the first semiconductor layer 111 and the third semiconductor layer 113 are n-type and the second semiconductor layer 112 is p-type, the first electrode 411 and the third electrode 413 are It may be an n-type electrode, and the second electrode 412 may be a p-type electrode.

A portion of each of the first electrode 411 , the second electrode 412 , and the third electrode 413 disposed outside the corresponding trench 210 is extended onto the insulating layer 300 to form the first insulating layer 310 . Alternatively, it may be disposed on the second insulating layer 330 . For example, a portion of the first electrode 411 may be disposed on the first insulating layer 310 , and a portion of the third electrode 413 may also be disposed on the first insulating layer 310 , In this case, the portion of the first insulating layer 310 in which the part of the first electrode 411 is disposed and the part of the first insulating layer 310 in which the part of the third electrode 413 is disposed are the light emitting devices 10 . ) may be positioned at a predetermined height t ₁₀ substantially equal to each other based on the lower surface of the . Alternatively, the part of the first electrode 411 and the part of the second electrode 422 may be disposed on the second insulating layer 330 disposed on the first insulating layer 310 . A portion of the second electrode 412 may be disposed on the second insulating layer 330 . However, the present invention is not limited thereto, and the portion of the first electrode 411 and the portion of the third electrode 413 may be disposed at different heights. In order to reduce the difference between the heights of the electrodes, the second insulating layer 330 may be additionally disposed below or on the side of the electrode having a lower height, or the second insulating layer 330 may have a thicker thickness. 1 and 2 , a portion of the first electrode 411 extending outside the first trench 211 and a portion of the third electrode 413 extending outside the third trench 213 are respectively second It is disposed on the insulating layer 330 and has a height of a part of the second insulating layer 330 in which a part of the first electrode 411 is positioned and a second insulating layer 330 in which a part of the third electrode 413 is positioned. It can be said that the partial height is substantially the same with respect to the lower surface of the light emitting device 10 . The second insulating layer 330 in which a portion of the first electrode 411 extending outside the first trench 211 is disposed is a portion of the second electrode 412 extending outside the second trench 212 is disposed. Since the height of the first insulating layer 310 is different from that of the first insulating layer 310 , the second insulating layer 330 may be disposed below the second electrode 412 and/or between the second electrode 412 and the first electrode 411 . and/or a second insulating layer 330 may be disposed between the second electrode 412 and the third electrode 413 . Accordingly, a portion of the second electrode 412 extending outside the second trench 212 may be disposed on the second insulating layer 330 . The second insulating layer 330 can adjust the height at which the second electrode 412 can be disposed, and a portion of the second electrode 412 (eg, a portion extending outside the second trench 212 ). A height of the second insulating layer 330 is adjusted by the second insulating layer 330 to form a height of a portion of the first electrode 411 (eg, a portion extending outside the first trench 211 ) and a portion of the third electrode 413 . It may have a height substantially equal to or almost the same as a height of (eg, a portion extending outside the third trench 213 ). The height may be substantially equal to a predetermined height t ₁₀ from the lower surface of the light emitting element 10 with respect to the lower surface of the light emitting element 10 . The height of a portion of the first electrode 411 , the second electrode 412 , and the third electrode 413 is not limited to being substantially equal to the predetermined height t ₁₀ , but the first electrode 411 , the second electrode ( 412 ) and a partial height of the third electrode 413 may have a difference of about 10% or less between the predetermined height t ₁₀ and the thickness of the light emitting device 10 , and the electrodes 410 may be disposed. For example, the difference between the height of a portion of the first electrode 411 , the second electrode 412 , and the third electrode 413 is about 5% or less between the predetermined height t− ₁₀ and the thickness of the light emitting device 10 . can have

The second insulating layer 330 of the light emitting device 10 according to an exemplary embodiment may be disposed below one electrode 410 or between the plurality of electrodes 410 to reduce the height difference of each portion between the plurality of electrodes. have. For example, in order to reduce a difference between the heights of a portion of the first electrode 411 extending outside the first trench 211 and a portion of the second electrode 412 extending outside the second trench 212 , the first electrode The second insulating layer 330 may be disposed under the lower electrode 411 and the second electrode 412 or between the first electrode 411 and the second electrode 412 . Since each portion of the plurality of electrodes 410 (the portion extending outside the corresponding trench 210 ) through the second insulating layer 330 may be disposed at substantially the same height, processes such as transfer and bonding processes Convenience of viewing may be increased, and it may be advantageous when manufacturing a display device.

The second insulating layer 330 may be substantially the same as or different from the first insulating layer 310 . The second insulating layer 330 may be disposed through spin coating or the like. The second insulating layer 330 may include an oxide or an insulator. The second insulating layer 330 may be made of a light-transmitting material so that color light can pass through the second insulating layer 330 . The light-transmitting material may mean a material having a light transmittance substantially equal to 85% or greater than about 85%. In addition, in order to reduce color distortion, a material having a transmittance difference of less than 10% in the entire visible light spectrum may be used. In addition, the light-transmitting material may include a transparent material.

The light emitting device 10 according to an exemplary embodiment may be rotationally symmetric with respect to at least one angle. However, the present invention is not limited thereto and there may be no rotationally symmetrical angle. For example, the light emitting device 10 may have a circular, oval, or polygonal plane.

In comparison with the prior art of emitting light of three different colors to realize full color and transferring light emitting devices having three different planar shapes to the wells of the corresponding substrates, according to an exemplary embodiment Since one light emitting element 10 can emit a plurality of color light, the degree of freedom for a planar shape design of the light emitting element 10 can be increased. For example, if the light emitting device 10 according to the exemplary embodiment can emit green light (G) and blue light (B), a full color can be implemented together with other light emitting devices capable of emitting red light (R). have. As described above, since full color can be realized through two types of light emitting devices instead of three different types of light emitting devices, when transferring a plurality of light emitting devices including the light emitting device 10 according to the exemplary embodiment by the FSA transfer method, the well The degree of freedom with respect to the shape and the planar shape design of the light emitting device may be increased. In addition, through the second insulating layer 330 , the height of the electrode 410 or a portion of the electrode 410 disposed on the light emitting device 10 (a portion extending outside the corresponding trench 210 ) is substantially the same. Or it could be about the same height. Accordingly, a process such as transfer or bonding may be facilitated, and favorable conditions may be created when manufacturing a display device. In addition, since one pixel can be configured with two light emitting devices, the number of light emitting devices can be reduced compared to manufacturing a display by configuring one pixel with at least three light emitting devices, thereby lowering the manufacturing cost. The light emitting device 10 and other light emitting devices according to the exemplary embodiment that can constitute one pixel may have the same thickness or different thickness, and in order to compensate for the thickness difference when disposed on a substrate (not shown), that is, The depth of the well corresponding to each light emitting device may be adjusted in order to make the heights of the two light emitting devices disposed in the substrate well substantially the same or nearly the same with respect to the lower surface of the substrate. More details on this will be provided later. However, as in the above example, the light emitting device 10 may emit two color lights, but is not limited thereto and may emit three or more color lights.

Next, look at other exemplary embodiments of the light emitting device.

3 is a cross-sectional view of a light emitting device 11 according to an exemplary embodiment.

In the light emitting device 11 according to an exemplary embodiment, one of the first electrode 411 or the third electrode 413a may be disposed on the corresponding trench 210 , and the other light emitting device 11 may be disposed on the corresponding trench 210 . It may be disposed in contact with the lower surface of the. The second electrode 412 may be disposed on the second trench 212 . At this time, it can be said that the electrode disposed on the lower surface of the light emitting device 11 has a vertical electrode structure with the second electrode 412 , and the electrode disposed on the trench 210 includes the second electrode 412 and the second electrode 412 . It can be said that it has a horizontal electrode structure. However, the present invention is not limited thereto, and the third electrode may be disposed along a trench (not shown) penetrating the light emitting device 11 on the lower surface of the light emitting device 11 , or the second electrode 412 may be disposed on the light emitting device ( 11) may be disposed along a trench (not shown) penetrating the light emitting device 11 on the lower surface. Referring to FIG. 3 , the third electrode 413a may be disposed on the lower surface of the light emitting device 11 . The third electrode 413a may have a planar shape such as a ring, a circle, an ellipse, or a polygon. The third electrode 413a disposed on the lower surface of the light emitting device 11 may directly contact the third semiconductor layer 113 . Since the third electrode 413a is disposed on the lower surface of the light emitting device 11 , the third trench 213 may not be formed. The third electrode 413a and the second electrode 412 may have a vertical electrode structure. The second electrode 412 may be disposed on the second trench 212 , and has a height of a portion of the second electrode 412 extending outside the second trench 212 and extending out of the first trench 211 . The height of a portion of the first electrode 411 may be substantially the same with respect to the lower surface of the light emitting device 11 . In other words, the height of the portion of the first electrode 411 and the height of the portion of the second electrode 412 may be substantially equal to or approximately equal to the predetermined height t ₁₁ . The first electrode 411 and the second electrode 412 may have a horizontal electrode structure. The electrode disposed in a vertical electrode structure may preferably be an electrode corresponding to a semiconductor layer close to the lower surface of the light emitting device 11 among the semiconductor layers 110 . In this case, the electrode corresponding to the semiconductor layer close to the lower surface of the light emitting device 11 among the semiconductor layers 110 may be disposed without a trench on the lower surface.

4 is a plan view of a light emitting device according to an exemplary embodiment, FIG. 5A is a cross-sectional view taken along line B-B′ of the light emitting device of FIG. 4 , and FIG. 5B is a light emitting device according to FIG. 4 inserted into a well of a substrate 5c is a view showing that the light emitting device according to FIG. 4 is rotated 180 degrees and inserted into the well of the substrate.

Referring to FIGS. 4 and 5A , the second semiconductor layer 122 of the light emitting device 12 according to an exemplary embodiment is a first sub-semiconductor layer 122a and a second semiconductor layer 122a under the first sub-semiconductor layer 122a. The sub-semiconductor layer 122b may be included, and the second trench 222 may include a first sub-trench 222a and a second sub-trench 222b spaced apart from each other, and the second electrode 422 may include It may include a first sub-electrode 422a and a second sub-electrode 422b that are spaced apart from each other. The first sub-trench 222a may penetrate the insulating layer 300 and a partial region of the light emitting cell 100 to expose the first sub-semiconductor layer 122a, and the second sub-trench 222b may be formed through the insulating layer ( The second sub-semiconductor layer 122b may be exposed through 300 . The first sub-trench 222a may penetrate the first semiconductor layer 121 and the first active layer 151 , and may additionally penetrate a portion of the thickness of the first sub-semiconductor layer 122a. The second sub-trench 222b may penetrate a portion of the thickness of the second sub-semiconductor layer 122b in addition to the insulating layer 300 . Accordingly, the light emitting cell 100 includes a first semiconductor layer 121 , a first active layer 151 , a first sub-semiconductor layer 122a , a second sub-semiconductor layer 122b , a second active layer 152 and a second The three semiconductor layers 123 may be included, and may be sequentially disposed or arranged from the top in the above order. When the first semiconductor layer 121 and the first sub-semiconductor layer 122a are electrically connected and a voltage is applied, the first color light may be emitted from the first active layer 151 . When the second sub-semiconductor layer 122b and the third semiconductor layer 123 are electrically connected and a voltage is applied, the second color light may be emitted from the second active layer 152 . The first color light and the second color light may be emitted independently of each other. That is, the light emitting device 12 according to the exemplary embodiment may emit only the first color light, only the second color light, or both the first color light and the second color light.

The second sub-semiconductor layer 122b may have a width greater than the width of the first sub-semiconductor layer 122a. A portion of the light emitting cell 100 including the first semiconductor layer 121 , the first active layer 151 , and the first sub-semiconductor layer 122a may be referred to as a first light emitting cell 100a and a second sub semiconductor A portion of the light emitting cell including the layer 122b, the second active layer 152 and the third semiconductor layer 123 may be referred to as a second light emitting cell 100b. The second light emitting cell 100b may have a width greater than that of the first light emitting cell 100a.

Only one of the first active layer 151 or the second active layer 152 may be disposed on a portion of the plane of the light emitting cell 100 viewed from the upper portion of the light emitting device 12 . 4 and 5A , only the second active layer 152 may be disposed on the left half of the light emitting device 12 , and the region where only the second active layer 152 is disposed will be referred to as a second light emitting plane SP2 . can A first active layer 151 and a second active layer 152 may be simultaneously disposed on the right half of the light emitting device 12 . A region in which the first active layer 151 is disposed except for the second emission plane SP2 may be referred to as a first emission plane SP1 . The first light emitting plane SP1 may emit the first color light and the second color light, and the second light emitting plane SP2 may emit only the second color light. However, the present invention is not limited thereto, and the first light emitting plane SP1 may be wider or narrower (ie, the second light emitting plane SP2 may be narrower or wider), or the first light emitting plane SP1 may have a second light emitting plane SP1. Only one active layer 151 may be disposed. If two or more active layers 150 are disposed on one light emitting plane, it may be preferable that the active layer disposed on the far side from the light exit direction emits light of a longer wavelength than the active layer disposed on the near side.

A DBR layer may be disposed between the first active layer 151 and the second active layer 152 . The DBR layer may be configured to reflect the first color light emitted from the first active layer 151 and may be configured to transmit the second color light emitted from the second active layer 152 . The first sub-semiconductor layer 122a and the second sub-semiconductor layer 122b may contact each other, but the present invention is not limited thereto and a DBR layer is disposed between the first sub-semiconductor layer 122a and the second sub-semiconductor layer 122b. it might be

4 and 5A , the light emitting device 12 according to the exemplary embodiment includes a first trench 221 , a first sub-trench 222a , a second sub-trench 222b , and a third trench 223 . may include. For example, the first trench 221 may have a predetermined depth t _1a in contact with the first semiconductor layer 121 to expose the first semiconductor layer 121 , and the first sub-trench 222a may In order to expose the first sub-semiconductor layer 122a, it may have a predetermined depth t _2a in contact with the first sub-semiconductor layer 122a, and the second sub-trench 222b forms the second sub-semiconductor layer 122b. It may have a predetermined depth t _2b in contact with the second sub-semiconductor layer 122b to expose it, and the third trench 223 is in the third semiconductor layer 123 to expose the third semiconductor layer 123 . It may have a predetermined depth t _3a in contact.

The first electrode 421 , the first sub-electrode 422a , the second sub-electrode 422b , and the third electrode 423 of the light emitting device 12 are in contact with the corresponding semiconductor layer 120 and have corresponding trenches. It may extend along 220 to the upper surface of insulating layer 300 . A sidewall of the trench 220 may be insulated by the first insulating layer 310 . According to FIGS. 4 and 5A , the heights of the first light emitting cell 100a and the second light emitting cell 100b are different from each other with respect to the lower surface of the light emitting device 12 , and thus the In order to reduce the difference between the heights of the first trench 221 and the first sub-trench 222a and the heights of the second sub-trench 222b and the third trench 223 disposed in the second light emitting cell 100b, that is, The second insulating layer 330 may be disposed so that the heights of the plurality of trenches 220 are substantially the same with respect to the lower surface of the light emitting device 12 . One portion of each of the first electrode 421 , the first sub-electrode 422a , the second sub-electrode 422b , and the third electrode 423 (eg, a portion extending outside the corresponding trench 220 ) ) from the lower surface of the light emitting device 12 may be substantially equal to a predetermined height t ₁₂ , or a height difference thereof may be arranged to have about 10% or less of the thickness of the light emitting device 12 .

The light emitting device 12 according to an exemplary embodiment may have a rectangular planar shape as shown in FIG. 4 . However, the present invention is not limited thereto and may have various shapes.

5B and 5C , the light emitting device 12 according to FIG. 4 may be disposed in the well 1010 of the substrate. A planar shape of the light emitting device 12 may be a rectangle, the left half of the plane of the light emitting device 12 may be the second light emitting plane SP2, and the right half of the plane of the light emitting device 12 may be the first light emitting plane SP1. have. In this case, the first trench 221 and the first sub-trench 222a may be positioned in the first light-emitting plane SP1 , and the second sub-trench 222b and the third trench in the second light-emitting plane SP2 . (223) may be located. A corresponding electrode 420 may be disposed in each trench 220 . The position of the first trench 221 and the position of the first sub-trench 222a of the light emitting device 12, the position of the second sub-trench 222b, and the position of the third trench 223 are the first light emitting plane ( It may be rotationally asymmetric with respect to a tangent line between SP1) and the second light emitting plane SP2. Alternatively, the position of the first electrode 421 and the position of the first sub-electrode 422a of the light emitting element 12, and the position of the second sub-electrode 422b and the third electrode 423 of the light emitting element 12 are the first light emitting planes. It may be rotationally asymmetric with respect to a tangent line between SP1 and the second light emitting plane SP2. In other words, the position of the first electrode 421 may not overlap the position of the second sub-electrode 422b or the position of the third electrode 423 when the position of the first electrode 421 is rotated 180 degrees with respect to the center of the tangent line. The position of the sub-electrode 422a may not overlap the position of the second sub-electrode 422b or the position of the third electrode 423 when the tangent line is rotated by a specific angle. Referring to FIG. 5B , the position of the first electrode 421 and the position of the first sub-electrode 422a when the light emitting device 12 is disposed in the well 1010 of the substrate in one direction is shown in FIG. 5C , , the position of the second sub-electrode 422b and the position of the third electrode 423 of the light emitting device 12 disposed in the well 1010 of the substrate in a direction rotated 180 degrees in one direction may not overlap. . As described above, when the positions of the first electrode 421 and the first sub-electrode 422a and the positions of the second sub-electrode 422b and the third electrode 423 are rotationally asymmetric with respect to an angle of 180 degrees, the light emitting device Even when 12 rotates 180 degrees, the electrodes 421 and 422a of the first light emitting plane SP1 are connected to the electrode pad 601 corresponding to the first light emitting plane SP1, and the second light emitting plane SP2 The electrodes 422b and 423 may be connected to the electrode pad 602 corresponding to the second light emitting plane SP2 . On the other hand, in the case of rotationally symmetrical with respect to 180 degrees, when the light emitting device 12 is rotated by 180 degrees, the electrodes 421 and 422a of the first light emitting plane SP1 and the electrode pads 602 corresponding to the second light emitting plane SP2 are rotated by 180 degrees. ), and the electrodes 422b and 423 of the second light emitting plane SP2 are connected to the electrode pad 601 corresponding to the first light emitting plane SP1, which may cause problems in electrical connection and color realization. have.

The electrode pad 600 of the driving layer may be embedded in the well 1010 of the substrate. The electrode pad 600 of the driving layer may include an electrode pad 601 corresponding to the first emission plane SP1 and an electrode pad 602 corresponding to the second emission plane SP2 . The electrode pad 600 of the driving layer may be rotationally symmetric with respect to a tangent line between the first light emitting plane SP1 and the second light emitting plane SP2 . In this case, the first light emitting plane SP1 of the light emitting device 12 is transferred to the right side of the well 1010 (eg, FIG. 5B ) or the first light emitting plane SP1 of the light emitting device 12 (eg, FIG. 5B ) In both cases where SP1) is transferred to the left side of the well 1010 (eg, FIG. 5C ), the electrodes 421 and 422a of the first light emitting plane SP1 correspond to the first light emitting plane SP1. It may be connected to the electrode pad 601 , and the electrodes 422b and 423 of the second light emitting plane SP2 may be connected to the electrode pad 602 corresponding to the second light emitting plane SP2 .

6 is a plan view showing a light emitting device according to an exemplary embodiment, FIG. 7 is a cross-sectional view taken along the line C-C′ of the light emitting device according to FIG. 6 , and FIG. 8 is a light emitting device according to an exemplary embodiment It is a cross section.

The light emitting devices 10, 11, 12, and 13 according to the exemplary embodiment may emit at least two color lights, and the light emitting device 13 according to the exemplary embodiments according to FIGS. 6 and 7 includes three It can emit colored light. The light emitting device 13 may include four semiconductor layers 130 and three active layers 150 disposed between each semiconductor layer. If the three color lights are red light (R), green light (G), and blue light (B), respectively, one light emitting device 13 may form one pixel. The light emitting cell 100 of the light emitting device 13 includes a first semiconductor layer 131 , a first active layer 151 , a second semiconductor layer 132 , a second active layer 152 , a third semiconductor layer 133 , It may include a third active layer 153 and a fourth semiconductor layer 134 , and may be sequentially disposed or arranged from the top in this order. The first semiconductor layer 131 may have the same polarity as the third semiconductor layer 133 . The second semiconductor layer 132 may have a polarity opposite to that of the first semiconductor layer 131 , and may have the same polarity as the fourth semiconductor layer 134 . When a voltage is applied between the first semiconductor layer 131 and the second semiconductor layer 132 , the first color light may be emitted from the first active layer 151 . When a voltage is applied between the second semiconductor layer 132 and the third semiconductor layer 133 , the second color light may be emitted from the second active layer 152 . When a voltage is applied between the third semiconductor layer 133 and the fourth semiconductor layer 134 , the third color light may be emitted from the third active layer 153 . The second semiconductor layer 132 may be a common semiconductor layer as it relates to emitting the first color light and the second color light. The third semiconductor layer 133 may be a common semiconductor layer as it relates to the emission of the second color light and the third color light. For example, the first color light may be blue light (B), the second color light may be green light (G), and the third color light may be red light (R). It may be desirable for the active layer disposed on the far side from the light exit direction to emit light of a longer wavelength than the active layer disposed on the near side. For example, the color light emitted from the second active layer 152 may preferably have a longer wavelength than the color light emitted from the first active layer 151 , and the color light emitted from the third active layer 153 may be 2 It may be desirable to have a longer wavelength than the color light emitted from the active layer 152 .

A first DBR layer may be disposed between the first active layer 151 and the second active layer 152 , and/or a second DBR layer may be disposed between the second active layer 152 and the third active layer 153 . can The first DBR layer may be configured such that the first color light emitted from the first active layer 151 is reflected, and the second color light emitted from the second active layer 152 is transmitted. The second DBR layer may be configured such that the second color light emitted from the second active layer 152 is reflected, and the third color light emitted from the third active layer 153 is transmitted.

Only one of the first active layer 151 , the second active layer 152 , or the third active layer 153 may be disposed on a portion of the plane of the light emitting cell 100 viewed from the upper portion of the light emitting device 13 . 6 and 7 , only the third active layer 153 may be disposed near the center of the light emitting device 13 , and the region in which only the third active layer 153 is disposed may be referred to as a third light emitting plane SP3 . have. A region in which the second active layer 152 is disposed without the first active layer 151 except for the third light emitting plane SP3 may be referred to as a second light emitting plane SP2 . Except for the second light emitting plane SP2 and the third light emitting plane SP3 , the region in which the first active layer 151 is disposed may be referred to as a first light emitting plane SP1 . The first color light, the second color light, and the third color light may be emitted from the first emission plane SP1 , and the second color light and the second color light may be emitted from the second emission plane SP2 , , only the third color light may be emitted to the third light emitting plane SP3 . However, the present invention is not limited thereto, and various changes and modifications are possible.

The light emitting device 13 according to an exemplary embodiment may include a first trench 231 , a second trench 232 , a third trench 233 , and a fourth trench 234 . For example, the first trench 231 may have a predetermined depth so as to be in contact with the first semiconductor layer 131 to expose the first semiconductor layer 131 , and the second trench 232 may have a second semiconductor layer 131 . In order to expose the layer 132 , it may have a predetermined depth so as to be in contact with the second semiconductor layer 132 , and the third trench 233 may have a third semiconductor layer 133 to expose the third semiconductor layer 133 . ) may have a predetermined depth, and the fourth trench 234 may have a predetermined depth to contact the fourth semiconductor layer 134 to expose the fourth semiconductor layer 134 .

One of the first trench 231 , the second trench 232 , the third trench 233 , or the fourth trench 234 may be centered on the plane of the light emitting device 13 . The plurality of trenches other than the trench disposed at the center may be symmetrical with respect to the center of the plane of the light emitting device 13 .

The first electrode 431 may be disposed on the first trench 231 , the second electrode 423 may be disposed on the second trench 232 , and the third electrode 433 may be disposed on the third trench ( 233 , and the fourth electrode 434 may be disposed in the fourth trench 234 . The first electrode 431 and the third electrode 433 may be n-type or p-type electrodes having the same polarity, and the second electrode 423 and the fourth electrode 434 are the first electrode 431 and the first electrode 434 . It may be an electrode having a polarity that is electrically opposite to that of the three electrodes 433 . The first electrode 431 may have the same conductivity type as the first semiconductor layer 131 . When adjacent electrodes of the light emitting device 13 are electrically connected and a voltage is applied to each of the adjacent electrodes, a plurality of color lights may be independently emitted. That is, according to the voltage application, the first color light alone, the second color light alone, the third color light alone, the first color light and the second color light, the second color light and the third color light, the first color light and A third color light, or first to third color light may be emitted.

A portion of the first electrode 431 , the second electrode 423 , the third electrode 433 , and the fourth electrode 434 (a portion extending outside the corresponding trench 230 ) is located at substantially the same height or Alternatively, the second insulating layer 330 may be disposed under each electrode 430 or between the electrodes 430 so that the height difference is within 10% of the thickness of the light emitting device 13 .

A portion of each electrode 430 extending out of the corresponding trench 230 may be located at a substantially predetermined height t ₁₃ or a height close thereto from the lower surface of the light emitting device 13 . In order to make the heights of the plurality of electrodes 430 substantially equal or similar, the second insulating layer 330 may be disposed below one electrode 430 or between the plurality of electrodes 430 . A detailed description thereof is the same as described above.

However, the present invention is not limited to the above description, and a vertical electrode structure may be included on the lower surface of the light emitting cell 100 instead of the one trench 230 . According to FIG. 8 , the fourth electrode 434a of the light emitting device 14 according to the exemplary embodiment may be disposed on the lower surface of the light emitting cell 100 instead of extending along the fourth trench 234 . . The fourth electrode 434a may be disposed in direct contact with the fourth semiconductor layer 134 . The first trench 231 , the second trench 232 , and the third trench 233 may be located at a substantially predetermined height t ₁₄ or a height close thereto.

The light emitting elements 13 and 14 according to FIGS. 6 to 8 can emit light of three different colors from one light emitting element 13 and 14, so that one light emitting element 13 and 14 can generate one pixel. can be implemented Accordingly, it can be said that full color can be realized by using the planar shape of the well of the substrate and the planar design of the light emitting devices 13 and 14 as one design, thereby increasing the degree of freedom in design, and the height of the plurality of electrodes 430 also emits light. The devices 13 and 14 have a height substantially equal to or close to a predetermined height (t ₁₃ or t ₁₄ ) from the lower surface of the device ( ₁₃ , ₁₄ ), thereby increasing convenience in processes such as transfer or bonding and may be advantageous in manufacturing a display device. In addition, since one pixel can be configured with one light emitting device 13 and 14, the number of light emitting devices can be reduced compared to manufacturing a display by configuring one pixel with at least three light emitting devices, thereby lowering the manufacturing cost. can

Next, a display device on which a light emitting element is transferred or disposed according to an exemplary embodiment will be described.

9 is a perspective view illustrating a substrate of a display device according to an exemplary embodiment, and FIG. 10A is a first type light emitting device disposed in the first and second wells of the substrate of the display device according to the exemplary embodiment; It is a view showing a type 2 light emitting device, and FIG. 10B is a view showing a type 3 light emitting device and a type 4 light emitting device disposed in the third well and the fourth well of the substrate of the display device according to another embodiment.

A display device according to an exemplary embodiment includes a substrate ( 1000) and a driving layer including a plurality of transistors. Here, the first type light emitting devices 10a and 10b may be the light emitting devices 10, 11, 12, 13, and 14 according to the exemplary embodiments described above. In addition, the type 2 light emitting devices 20a and 20b may have a different planar shape from the type 1 light emitting devices 10a and 10b, and the plurality of color lights emitted by the type 1 light emitting devices 10a and 10b and It can emit different color light. 9 and 10A , the plurality of wells 1010 may include a first well 1011 and a second well 1012 , and the first type light emitting device 10a is disposed in the first well 1011 . It may be exclusively disposed, and the second type light emitting device 20a may be exclusively disposed in the second well 1012 . The transistor of the driving layer may be electrically connected to the electrode of the light emitting device through the electrode pad of the driving layer to switch the light emitting device. For example, the light emitting layer and the driving layer may be electrically connected to each other at a predetermined height using methods such as soldering, eutectic, and anisotropic conductive film (ACF). However, it is not limited to the bonding method as described above, and the light emitting layer and the driving layer may be electrically connected by a method such as forming the driving layer through a photolithography process in a state in which the light emitting device is transferred onto the substrate.

To distinguish whether the first type light emitting device 10a, 10b and the second type light emitting device described above or to be described later are the light emitting devices 10, 11, 12, 13, 14 according to the exemplary embodiment, The type 1 light emitting devices 10a and 10b and the type 2 light emitting devices 20a and 20b may each have various planar shapes without any limitation. However, the type 2 light emitting devices 20a and 20b are not limited to light emitting devices other than the light emitting devices 10, 11, 12, 13, and 14 according to the exemplary embodiment, and the light emitting device ( 10, 11, 12, 13, 14) may be a light emitting device having a planar shape different from that of the first type light emitting devices 10a and 10b.

Referring to FIG. 9 , the well 1010 included in the substrate 1000 may be disposed to extend in a direction parallel to the substrate 1000 . The first well 1011 and the second well 1012 may be alternately disposed with each other, and the adjacent first and second wells 1011 and 1012 may constitute one pixel. When the type 1 light emitting device 10a and the type 2 light emitting device 20a are transferred to the substrate 1000, the type 1 light emitting device 10a and the type 2 light emitting device 20a suspended in the suspension are respectively the first type light emitting device 10a and the second type light emitting device 20a. It may be transferred exclusively to the first well 1011 and the second well 1012 . Since the type 1 light emitting device 10a according to the exemplary embodiment can emit a plurality of color lights, one pixel can be implemented only with the wells 1011 and 1012 having two shapes, so that the well 1010 has a planar shape design and The degree of freedom for the planar shape design of the light emitting device may be increased. However, the present invention is not limited thereto, and the substrate 1000 may include a third well 1013 and a fourth well 1014 that are different from the planar shapes of the first well 1011 and the second well 1012 , The first type light emitting device 10b and the second type light emitting device 20b may be exclusively disposed in the third well 1013 and the fourth well 1014 , respectively.

According to FIG. 10A , the first well 1011 of the plurality of wells 1010 of the substrate 1000 may have a circular plane, and the second well 1012 of the plurality of wells 1010 may have a square plane. have. The first type light emitting device 10a may be transferred and disposed to correspond to the first well 1011 , and the second type light emitting device 20a may be transferred and disposed to correspond to the second well 1012 . The first type light emitting device 10a is the light emitting device 10 , 11 , 12 , 13 , and 14 according to the exemplary embodiment described above, and may emit a plurality of color lights. The adjacent first well 1011 and second well 1012 may constitute one pixel. For example, the first type light emitting device 10a may emit green light G in the first emission plane SP1 and may emit blue light B in the second emission plane SP2 . Green light (G) may have a wavelength of about 495 nm to 570 nm, and blue light (B) may have a wavelength of about 420 nm to 495 nm. The type 2 light emitting device 20a may emit red light (R). The red light R may have a wavelength between about 620 nm and 750 nm. However, the wavelength range of the color light emitted from the first light emitting device 10a is not limited to the blue light (B), green light (G), or red light (R), and other wavelength ranges may be possible. For example, the color light emitted from the first light emitting device 10a is not limited to blue light (B), green light (G), and red light (R), and has a wavelength of about 380 nm to 450 nm. color light, cyan color light having a wavelength of about 475 nm to 510 nm, Yellow color light having a wavelength of about 565 nm to 590 nm, and/or a wavelength of about 590 nm to 620 nm It may include orange color light. Since the first type light emitting device 10a is capable of emitting two or more color lights, the planar shape of the well 1010 and the planar shape of the light emitting devices 10a and 20a are sufficient with two different designs. The design freedom of the well planar shape and the light emitting device planar shape can be increased compared to requiring three designs. However, the above example is only one exemplary embodiment, and the planar shape of the first well 1011 and the second well 1012 or the planar shape of the first type light emitting device 10a and the second type light emitting device 20a is not limited to the above example and may have various shapes.

Referring to FIG. 10B , the plurality of wells 1010 of the substrate 1000 may include a third well 1013 and a fourth well 1014 . A third well 1013 of the plurality of wells 1010 may have a rectangular plane, and a fourth well 1014 of the plurality of wells 1010 may have a circular plane. The first type light emitting device 10b may be transferred to the third well 1013, and in particular, the light emitting device 12 according to FIGS. 4 and 5A is the first type light emitting device 10b as the third well ( 1013) and may be disposed. The second type light emitting device 20b may be transferred to the fourth well 1014 in correspondence therewith. The left half of the type 1 light emitting device 10b may become the second light emitting plane SP2 emitting green light G, and the right half may become the first light emitting plane SP1 emitting blue light B. can In addition to the arrangement as described above, as described with reference to FIGS. 5B and 5C , the light emitting device 10b may be rotated 180 degrees to operate normally even when the light emitting device 10b is inserted and disposed.

11 is a cross-sectional view showing a substrate of a display device according to an exemplary embodiment.

Referring to FIG. 11 , a first type light emitting device 10a is disposed in a first well 1011 of a plurality of wells 1010 , and a second type light emitting device 20a is disposed in a second well 1012 of the plurality of wells 1010 . can be placed. The thickness t 10a of the first type light emitting device _10a and the thickness t _20a of the second type light emitting device 20a may be the same as or different from each other. In the former case, the depth of the first well 1011 and the second well 1012 may be configured to be substantially the same. In the latter case, the plurality of electrodes of the first type light emitting device 10a and at least one electrode of the second type light emitting device 20a are substantially equal to a predetermined height T ₁ from the lower surface of the substrate 1000 or The depth of the first well 1011 and the depth of the second well 1012 may be configured to be adjacent to each other. A portion of each electrode extending from each corresponding trench of the type 1 light emitting device 10a is positioned at substantially the same height as the predetermined height T ₁ , or is a type 1 light emitting device at the predetermined height T ₁ . The element 10a may be positioned with a height difference within 10% of the thickness. At least one electrode of the type 2 light emitting device 20a is positioned at substantially the same height as the predetermined height T ₁ , or 10 of the predetermined height T ₁ and the thickness of the type 1 light emitting device 10a. It can be positioned with a height difference within %. For example, when the thickness of the first type light emitting device 10a is greater than the thickness of the second type light emitting device 20a, the depth of the first well 1011 may be greater than the depth of the second well 1012 . . The difference between the thickness t 10a of the first type light emitting device _10a and the thickness t _20a of the second type light emitting device 20a is substantially the same as the depth difference between the first well 1011 and the second well 1012 . The same or a difference between the depth difference between the first well 1011 and the second well 1012 and the length difference of the thickness t _10a of the first type light emitting device 10a may be within 10%. The example is not limited thereto, and the type 1 light emitting device 10b having a different shape and the second type light emitting device 20b having a different shape may be disposed according to the planar shape of the well 1010 .

12A is a cross-sectional view of a display apparatus according to an exemplary embodiment, and FIG. 12B is a cross-sectional view illustrating that the display apparatus according to an exemplary embodiment further includes a color conversion layer.

12A and 12B , display apparatuses 1400a and 1400b according to an exemplary embodiment may include a plurality of light emitting devices according to the exemplary embodiment described above. At this time, at least one of the light emitting devices may be the light emitting devices 10, 11, 12, 13, and 14 described with reference to FIGS. 1 to 8 . The plurality of light emitting devices 10 , 11 , 12 , 13 and 14 may be transferred and fixed on the driving layer 1440 of the display devices 1400a and 1400b to form a plurality of pixels. When the plurality of light emitting devices are transferred to the driving layer 1440 , they may be electrically connected to the plurality of transistors, and the light emitting devices may be operated according to signals of the corresponding transistors. The light emitting layer 1475 including a plurality of light emitting devices may be passivated. In order for the display to realize full color, an RGB display method in which each of the light emitting devices emitting red light (R), green light (G), and blue light (B) is transferred and fixed to one pixel may be used, and one pixel A method of using a color conversion layer in which a color conversion layer 1495 is formed after transferring and fixing the light emitting devices emitting blue light (B) to the substrate may be used. Since at least one of the light emitting devices according to the exemplary embodiment can emit a plurality of color lights, it may be preferable to use the RGB display method. 12A shows a type 1 light emitting device 10a emitting green light (G) and blue light (B) and a type 2 light emitting device 20a emitting red light (R) are transferred into one pixel of the display device 1400a. that has been shown to be The type 1 light emitting device 10a and the type 2 light emitting device 20a of the display according to the exemplary embodiment may constitute one pixel. It is not limited to the above example, and a second type light emitting device having a different shape from that of the first type light emitting device 10b having a different shape may be disposed according to the shape of the well planar surface.

12B shows a plurality of first type light emitting devices 10a emitting green light (G) and blue light (B) are transferred to one pixel of the display device 1400b, and a color conversion layer 1495 is transferred onto the light emitting layer 1475 . This shows how it was placed. The color conversion layer 1495 includes a first color conversion layer that converts the first color light from the light emitting element 10a into third color light, a second color conversion layer that converts the second color light into third color light, and It may be a layer including a resin that transmits the first color light and the second color light so that there is no color conversion. The first color light may be green light (G), the second color light may be blue light (B), and the third color light may be red light (R). A resin 1495A is disposed on one light emitting device disposed in one pixel, and the single light emitting device 10a may emit green light (G) and blue light (B). A first color conversion layer 1495B and/or a second color conversion layer may be disposed on the other light emitting device 10a disposed in one pixel. When only the first color conversion layer 1495B is disposed, the other light emitting device may be electrically connected to the driving layer 1440 so as to emit only green light (G). When only the second color conversion layer is disposed, the other light emitting device may be electrically connected to the driving layer 1440 to emit only blue light (B). When the first color conversion layer 1495B and the second color conversion layer are disposed, the first color conversion layer 1495B may be disposed on the second color conversion layer, and the other light emitting device emits green light (G). ) and/or may be electrically connected to the driving layer 1440 to emit blue light (B). Since the color light passing through the color conversion layer through the other light emitting device is color converted into red light (R) by the color conversion layer 1495, the two first type light emitting devices 10a constitute one pixel. can do.

However, it is not limited to the above example, and since one light emitting device 13 and 14 according to an exemplary embodiment may constitute one pixel by emitting light of three or more different colors, the RGB display method or color conversion It is also possible to implement full color without using a layer method.

13 is a block diagram of an electronic device including a display device according to an exemplary embodiment.

Referring to FIG. 13 , an electronic device 5201 may be provided in a network environment 5200 . In the network environment 5200, the electronic device 5201 communicates with another electronic device 5202 through a first network 5298 (a short-range wireless communication network, etc.), or a second network 5299 (a long-distance wireless communication network, etc.) ) through another electronic device 5204 and/or the server 5208 . The electronic device 5201 may communicate with the electronic device 5204 through the server 5208 . The electronic device 5201 includes a processor 5220 , a memory 5230 , an input device 5250 , an audio output device 5255 , a display device 5260 , an audio module 5270 , a sensor module 5276 , and an interface 5277 . ), a haptic module 5279 , a camera module 5280 , a power management module 5288 , a battery 5289 , a communication module 5290 , a subscriber identification module 5296 , and/or an antenna module 5297 . can In the electronic device 5201, some of these components may be omitted or other components may be added. Some of these components may be implemented as one integrated circuit. For example, the sensor module 5276 (fingerprint sensor, iris sensor, illuminance sensor, etc.) may be implemented by being embedded in the display device 5260 (display, etc.).

The processor 5220 may execute software (such as a program 5240) to control one or a plurality of other components (hardware, software components, etc.) of the electronic device 5201 connected to the processor 5220, and , various data processing or operations can be performed. As part of data processing or computation, the processor 5220 loads commands and/or data received from other components (sensor module 5276, communication module 5290, etc.) into volatile memory 5232, and It may process commands and/or data stored in 5232 , and store the resulting data in non-volatile memory 5234 . The processor 5220 includes a main processor 5221 (central processing unit, application processor, etc.) and a secondary processor 5223 (graphic processing unit, image signal processor, sensor hub processor, communication processor, etc.) that can be operated independently or together therewith. may include The auxiliary processor 5223 may use less power than the main processor 5221 and may perform a specialized function.

The coprocessor 5223 operates on behalf of the main processor 5221 while the main processor 5221 is in the inactive state (sleep state), or the main processor 5221 while the main processor 5221 is in the active state (the application execution state). Together with the processor 5221 , functions and/or states related to some of the components of the electronic device 5201 (eg, the display device 5260 , the sensor module 5276 , the communication module 5290 , etc.) may be controlled. can The auxiliary processor 5223 (image signal processor, communication processor, etc.) may be implemented as a part of other functionally related components (camera module 5280, communication module 5290, etc.).

The memory 5230 may store various data required by components of the electronic device 5201 (the processor 5220 , the sensor module 5276, etc.). The data may include, for example, input data and/or output data for software (such as program 5240) and instructions related thereto. The memory 5230 may include a volatile memory 5232 and/or a non-volatile memory 5234 .

The program 5240 may be stored as software in the memory 5230 , and may include an operating system 5242 , middleware 5244 , and/or an application 5246 .

The input device 5250 may receive commands and/or data to be used by a component (eg, the processor 5220 ) of the electronic device 5201 from outside the electronic device 5201 (eg, a user). The input device 5250 may include a remote controller, a microphone, a mouse, a keyboard, and/or a digital pen (such as a stylus pen).

The sound output device 5255 may output a sound signal to the outside of the electronic device 5201 . The sound output device 5255 may include a speaker and/or a receiver. The speaker can be used for general purposes such as multimedia playback or recording playback, and the receiver can be used to receive incoming calls. The receiver may be integrated as a part of the speaker or may be implemented as an independent separate device.

The display device 5260 may visually provide information to the outside of the electronic device 5201 . The display device 5260 may include a display, a hologram device, or a projector and a control circuit for controlling the corresponding device. The display device 5260 may include the light emitting devices 10 , 11 , 12 , 13 , and 14 described with reference to FIGS. 1 to 8 . The display device 5260 may include a touch circuitry configured to sense a touch, and/or a sensor circuitry configured to measure the intensity of force generated by the touch (such as a pressure sensor).

The audio module 5270 may convert a sound into an electric signal or, conversely, convert an electric signal into a sound. The audio module 5270 obtains a sound through the input device 5250 or other electronic device (such as the electronic device 8102) directly or wirelessly connected to the sound output device 5255 and/or the electronic device 5201 ) can output sound through the speaker and/or headphones.

The sensor module 5276 detects an operating state (power, temperature, etc.) of the electronic device 5201 or an external environmental state (user state, etc.), and generates an electrical signal and/or data value corresponding to the sensed state. can do. The sensor module 5276 may include a gesture sensor, a gyro sensor, a barometric pressure sensor, a magnetic sensor, an acceleration sensor, a grip sensor, a proximity sensor, a color sensor, an IR (Infrared) sensor, a biometric sensor, a temperature sensor, a humidity sensor, and/or an illuminance sensor. It may include a sensor.

The interface 5277 may support one or more designated protocols that may be used by the electronic device 5201 to directly or wirelessly connect with another electronic device (such as the electronic device 8102 ). The interface 5277 may include a High Definition Multimedia Interface (HDMI), a Universal Serial Bus (USB) interface, an SD card interface, and/or an audio interface.

The connection terminal 5278 may include a connector through which the electronic device 5201 may be physically connected to another electronic device (eg, the electronic device 5202 ). The connection terminal 5278 may include an HDMI connector, a USB connector, an SD card connector, and/or an audio connector (such as a headphone connector).

The haptic module 5279 may convert an electrical signal into a mechanical stimulus (vibration, movement, etc.) or an electrical stimulus that the user can perceive through tactile or kinesthetic sense. The haptic module 5279 may include a motor, a piezoelectric element, and/or an electrical stimulation device.

The camera module 5280 may capture still images and moving images. The camera module 5280 may include a lens assembly including one or more lenses, image sensors, image signal processors, and/or flashes. The lens assembly included in the camera module 5280 may collect light emitted from a subject, which is an image to be captured.

The power management module 5288 may manage power supplied to the electronic device 5201 . The power management module 8388 may be implemented as part of a Power Management Integrated Circuit (PMIC).

The battery 5289 may supply power to components of the electronic device 5201 . Battery 5289 may include a non-rechargeable primary cell, a rechargeable secondary cell, and/or a fuel cell.

Communication module 5290 establishes a direct (wired) communication channel and/or wireless communication channel between the electronic device 5201 and other electronic devices (electronic device 8102, electronic device 8104, server 8108, etc.); and performing communication through an established communication channel. The communication module 5290 may include one or more communication processors that operate independently of the processor 5220 (such as an application processor) and support direct communication and/or wireless communication. The communication module 5290 may include a wireless communication module 5292 (a cellular communication module, a short-range wireless communication module, a Global Navigation Satellite System (GNSS, etc.) communication module) and/or a wired communication module 5294 (Local Area Network (LAN) communication). module, power line communication module, etc.). Among these communication modules, a corresponding communication module is a first network 5298 (a short-range communication network such as Bluetooth, WiFi Direct, or Infrared Data Association (IrDA)) or a second network 5299 (a cellular network, the Internet, or a computer network (LAN) , WAN, etc.) through a telecommunication network) and may communicate with other electronic devices. These various types of communication modules may be integrated into one component (single chip, etc.) or implemented as a plurality of components (plural chips) separate from each other. The wireless communication module 5292 uses subscriber information stored in the subscriber identification module 5296 (such as an International Mobile Subscriber Identifier (IMSI)) within a communication network, such as the first network 5298 and/or the second network 5299 . may check and authenticate the electronic device 5201 in .

The antenna module 5297 may transmit or receive signals and/or power to the outside (eg, other electronic devices). The antenna may include a radiator having a conductive pattern formed on a substrate (PCB, etc.). The antenna module 5297 may include one or a plurality of antennas. When a plurality of antennas are included, an antenna suitable for a communication method used in a communication network such as the first network 5298 and/or the second network 5299 is selected from among the plurality of antennas by the communication module 5290 . can Signals and/or power may be transmitted or received between the communication module 5290 and another electronic device through the selected antenna. In addition to the antenna, other components (eg, RFIC) may be included as part of the antenna module 5297 .

Some of the components are connected to each other through communication methods between peripheral devices (bus, GPIO (General Purpose Input and Output), SPI (Serial Peripheral Interface), MIPI (Mobile Industry Processor Interface), etc.) and signals (commands, data, etc.) ) are interchangeable.

The command or data may be transmitted or received between the electronic device 5201 and the external electronic device 5204 through the server 8108 connected to the second network 5299 . The other electronic devices 5202 and 5204 may be the same or different types of electronic devices 5201 . All or part of the operations executed in the electronic device 5201 may be executed in one or more of the other electronic devices 5202 , 5204 , and 5208 . For example, when the electronic device 5201 needs to perform a function or service, it requests one or more other electronic devices to perform part or all of the function or service instead of executing the function or service itself. can One or more other electronic devices receiving the request may execute an additional function or service related to the request, and transmit a result of the execution to the electronic device 5201 . For this purpose, cloud computing, distributed computing, and/or client-server computing technologies may be used.

Fig. 14 shows an example in which a display device according to an exemplary embodiment is applied to a mobile device. The mobile device 6100 may include a display device 6110 according to an exemplary embodiment. The display device 6110 may include the light emitting devices 10 , 11 , 12 , 13 , and 14 described with reference to FIGS. 1 to 8 . The display device 6110 may have a foldable structure, and may be applied to, for example, a multi-folder display. Here, although the mobile device 6100 is illustrated as a clamshell display, it may be applicable to a general flat panel display.

Fig. 15 shows an example in which a display device according to an exemplary embodiment is applied to a vehicle. The display device may be applied to a head-up display device for a vehicle. The head-up display device 6200 includes a display device 6210 provided in an area of the vehicle, and at least one light path changing member ( 6220).

16 illustrates an example in which a display device according to an exemplary embodiment is applied to augmented reality glasses or virtual reality glasses. The augmented reality glasses 6300 may include a projection system 6310 that forms an image, and at least one element 6330 that guides the image from the projection system 6310 into the user's eye. The projection system 6310 may include the light emitting elements 10 , 11 , 12 , 13 , and 14 described with reference to FIGS. 1 to 8 .

Fig. 17 shows an example in which a display device according to an exemplary embodiment is applied to a large-sized signage. The signage 6400 may be used for outdoor advertisement using a digital information display, and may control advertisement contents and the like through a communication network. The signage 6400 may be implemented, for example, through the electronic device described with reference to FIG. 13 .

18 illustrates an example in which a display device according to an exemplary embodiment is applied to a wearable display. The wearable display 6500 may include the light emitting devices 10, 11, 12, 13, and 14 described with reference to FIGS. 1 to 8 , and may be implemented through the electronic device described with reference to FIG. 13 .

The display device according to the exemplary embodiment may also be applied to various products such as a rollable TV and a stretchable display.

The above-described embodiments are merely exemplary, and various modifications and equivalent other embodiments are possible by those skilled in the art. Accordingly, the true technical protection scope according to the exemplary embodiment should be determined by the technical spirit of the invention described in the claims below.

10,11,12,13,14: light emitting element 10a, 10b: type 1 light emitting element
20a, 20b: type 2 light emitting device 100: light emitting cell
110,120,130: semiconductor layer 111,121,131: first semiconductor layer
112,122,132: second semiconductor layer 113,123,133: third semiconductor layer
122a: first sub-semiconductor layer 122b: second sub-semiconductor layer
134: fourth semiconductor layer 150: active layer
151: first active layer 152: second active layer
153: third active layer 210: trench
211,221,231: first trench 212,222,232: second trench
213,223,233: third trench 222a: first sub-trench
222b: second sub-trench 234: fourth trench
300: insulating layer 310: first insulating layer
330: second insulating layer 410: electrode
411,421,431: first electrode 412,422,432: second electrode
413,423,433,413a: third electrode 422a: first sub-electrode
422b: second sub-electrode 434,434a: fourth electrode
600: electrode pad
601: a first electrode pad corresponding to the first light emitting cell
602: second electrode pad corresponding to the second light emitting cell
1000: substrate
1010: well 1011: first well
1012: second well 1013: third well
1014: fourth well SP1: first light emitting plane
SP2: second light emitting plane 1400a, 1400b: display device
1440: driving layer 1475: light emitting layer
1495: color conversion layer

Claims (20)

light emitting comprising a first semiconductor layer, a first active layer emitting a first color light, a second semiconductor layer, a second active layer emitting a second color light, and a third semiconductor layer, arranged in this order from top to bottom cell;
an insulating layer covering the light emitting cell and having a flat upper surface;
a first trench penetrating through the insulating layer to expose the first semiconductor layer;
a second trench penetrating the insulating layer to expose the second semiconductor layer;
a first electrode extending to an upper surface of the insulating layer along the first trench while in contact with the first semiconductor layer;
a second electrode extending to an upper surface of the insulating layer along the second trench while in contact with the second semiconductor layer; and
and a third electrode in contact with the third semiconductor layer. According to claim 1,
The insulating layer is
a first insulating layer covering an upper surface of the light emitting cell, a side surface of the first trench, and a side surface of the second trench;
disposed on the first insulating layer and configured to reduce a difference between a height of a portion of the first electrode extending out of the first trench and a height of a portion of the second trench extending out of the second trench A light emitting device comprising a second insulating layer. 3. The method of claim 2,
A height of the first electrode and a height of the second electrode are substantially the same as a predetermined height from the lower surface of the light emitting device, or a difference between a height of the first electrode and a height of the second electrode and a height of the predetermined height is within 10% of the thickness of the light emitting device. According to claim 1,
a third trench penetrating through the insulating layer and a partial region of the light emitting cell to expose the third semiconductor layer;
The third electrode is in contact with the third semiconductor layer and extends along the third trench to the upper surface of the insulating layer. 5. The method of claim 4,
the first active layer emits a first color light;
the second active layer emits a second color light;
A light emitting device in which only one of a first active layer or a second active layer is disposed in a partial region of the light emitting cell as viewed from above. 5. The method of claim 4,
The first semiconductor layer and the third semiconductor layer have the same polarity, and the second semiconductor layer has a different polarity from the first semiconductor layer,
The first electrode and the third electrode have the same polarity, and the second electrode has a polarity opposite to that of the first electrode. 5. The method of claim 4,
The light emitting cell emits the first color light as the second electrode is connected to the first electrode,
A light emitting device in which the light emitting cell emits the second color light as the second electrode is connected to the third electrode. 5. The method of claim 4,
The second semiconductor layer includes a first sub-semiconductor layer and a second sub-semiconductor layer,
The second trench includes a first sub-trench and a second sub-trench spaced apart from each other,
the first sub-trench penetrates the insulating layer to expose the first sub-semiconductor layer;
the second sub-trench penetrates the insulating layer and a partial region of the light emitting cell to expose the second sub-semiconductor layer;
The second electrode includes a first sub-electrode and a second sub-electrode spaced apart from each other,
the first sub-electrode extends to the upper surface of the insulating layer along the first sub-trench while in contact with the first sub-semiconductor layer;
The second sub-electrode is in contact with the second sub-semiconductor layer and extends along the second sub-trench to an upper surface of the insulating layer. 9. The method of claim 8,
The second sub-semiconductor layer has a width greater than a width of the first sub-semiconductor layer. 9. The method of claim 8,
the first electrode is electrically connected to the first sub-electrode so that the first active layer emits the first color light;
The third electrode is electrically connected to the second sub-electrode so that the second active layer emits the second color light. 9. The method of claim 8,
The position of the first electrode or the position of the first sub-electrode of the light emitting device arranged in one direction is,
A light emitting device that does not overlap a position of a second sub-electrode or a position of a third sub-electrode of the light emitting device disposed in a direction rotated by 180 degrees in the one direction. According to claim 1,
wherein the light emitting cell comprises a first color light emitting structure and a second color light emitting structure,
the second semiconductor layer is included in common in the first color light emitting structure and the second color light emitting structure;
A light emitting device in which a bonding layer is not disposed between the first color light emitting structure and the second color light emitting structure. According to claim 1,
Further comprising a DBR (Distributed Bragg Reflector) layer disposed between the first active layer and the second active layer,
In the DBR layer, a reflectance of the first color light is higher than a transmittance of the first color light, and a transmittance of the second color light is higher than a reflectance of the second color light. According to claim 1,
The third electrode is disposed on the lower surface of the light emitting cell,
the second electrode is electrically connected to the first electrode so that the first active layer emits the first color light;
The second electrode is electrically connected to the third electrode so that the second active layer emits the second color light. According to claim 1,
The light emitting cell further includes a third active layer emitting a third color light,
The first color light, the second color light, and the third color light constitute one pixel. According to claim 1,
The second electrode is disposed in the center of the light emitting device,
The first electrode is a light emitting device that is symmetrical with respect to a center of the light emitting device. According to claim 1,
A planar shape of the light emitting device is rotationally symmetric with respect to at least one angle. According to claim 1,
The light emitting device is a light emitting device having a circular, elliptical, or polygonal plane. A plurality of first type light emitting devices according to claim 1 and a plurality of second light emitting devices having a different planar shape from the first type light emitting device and emitting a plurality of color lights different from the plurality of color lights emitted by the first type light emitting device a light emitting layer including a light emitting device; and
a substrate including a plurality of wells and a driving layer including a plurality of transistors; and
The plurality of wells include first and second wells adjacent to each other;
The first type light emitting device is exclusively disposed in the first well,
The second type light emitting device is exclusively disposed in the second well,
The first well and the second well constitute one pixel. 20. The method of claim 19,
the first well has a first depth;
The first depth is a depth such that the first to third electrodes included in the first type light emitting device disposed in the first well are located at a substantially predetermined height from the lower surface of the substrate, respectively, or It is a depth such that the first electrode to the third electrode have a height difference within 10% of the predetermined height and the thickness of the first type light emitting device, respectively,
the second well has a second depth;
The second depth is a depth such that at least one electrode included in the second type light emitting device disposed in the second well is substantially located at the predetermined height, or a difference between the predetermined height and the first type light emitting device thickness. A display device that is a depth to have a height difference within 10%.

Images