KR20220146780A - A composition of photoresist and photosensitive polymers - Google Patents

Abstract

The present invention relates to a photosensitive polymer including a repeating unit derived from a phenyl (meth)acrylamide compound represented by a chemical formula 1 below, and a resist composition. The present invention is to provide the functional phenyl (meth)acrylamide compound that is easy to manufacture, has excellent resistance to dry etching and resist sensitivity, and at the same time, is stable and easily applicable to the production of photosensitive polymers.

Description

Photosensitive polymer and photoresist composition

The present invention relates to a photosensitive polymer comprising a functional phenyl (meth)acrylamide compound, and a resist composition, and more particularly, to a photosensitive polymer having excellent resist high sensitivity and dry etching resistance, and a resist composition comprising the photosensitive polymer .

As semiconductor manufacturing processes become more complex and the degree of integration of semiconductor devices increases, fine pattern formation is required. In the photoresist material, a resist material using an ArF excimer laser (193 nm) which uses a shorter wavelength than the resist material using a conventional KrF excimer laser (248 nm) has come to be used.

However, in a device having a semiconductor device having a capacity of 16 gigabit or more, as the design rule requires a pattern size of 70 nm or less, the thickness of the resist film becomes smaller and the process margin becomes smaller in the process of etching the underlying film quality. As the number decreases, there is a growing limitation in using a resist material using an ArF excimer laser.

The resist material used for lithography using the ArF excimer laser has many problems in commercialization compared to the conventional resist material. The most typical problem is the resistance to dry etching of the photosensitive resin.

As conventional ArF resists known so far, acrylic or methacrylic polymers have been mainly used. Among them, poly(methacrylate)-based polymer materials were most commonly used. A serious problem with these polymers is that they have very poor resistance to dry etching. That is, the selectivity of these materials is too low in the dry etching process using plasma gas during the semiconductor device manufacturing process, so it is difficult to proceed with the etching process.

Accordingly, in order to increase resistance to dry etching, an alicyclic compound, which is a material having strong resistance to dry etching, for example, an isobornyl group, an adamantyl group, and a tricyclo A method of introducing a decanyl group (tricyclodecanyl group) as a substituent of the polymer was used. However, in order to satisfy the solubility in the developer and the adhesive properties to the underlying film quality, which are the requirements of the photosensitive resin to satisfy the properties of the photoresist material, the polymer form mainly has a structure greater than or equal to a terpolymer. Since the portion occupied by the alicyclic group is small, the resistance to dry etching is still weak. In addition, since the alicyclic compound is hydrophobic, if a large amount of the alicyclic compound is included in the triple copolymer structure as described above, the adhesive property of the resist film to the lower film quality is deteriorated.

As another prior art polymer, a cycloolefin-maleic anhydride (COMA) alternating polymer has been proposed. In the production of the COMA-type copolymer, the raw material production cost is low, but there is still a problem in terms of synthesis yield and resolution when preparing the polymer.

In addition, the polymers synthesized with the above structure have a very hydrophobic alicyclic group as a backbone, and thus have poor adhesion to a film quality. In addition, above all, the COMA-type photosensitive resin has a disadvantage in the storage stability of the resist composition.

Patent Document 1: KR 10-2021-0044691

An object of the present invention is to provide a functional phenyl (meth)acrylamide compound that is easy to manufacture, has excellent resistance to dry etching and resist sensitivity, and can be applied to photosensitive polymer production stably and conveniently.

Another object of the present invention is to provide a photosensitive polymer having excellent resistance to dry etching and high sensitivity to light by including a functional phenyl (meth)acrylamide compound as a monomer.

Another object of the present invention is to provide a resist composition capable of providing excellent lithography performance even in a lithography process using a light source in an extreme wavelength region such as 248 nm, 193 nm region and EUV (13.5 nm) using the photosensitive polymer.

However, the technical problems to be achieved by the present invention are not limited to the above-mentioned problems, and other technical problems will be clearly understood by those skilled in the art from the following description.

In order to achieve the above object, according to an embodiment of the present invention, there is provided a photosensitive polymer including a repeating unit derived from the functional phenyl (meth)acrylamide compound as a monomer.

According to another embodiment of the present invention, there is provided a resist composition comprising the photosensitive polymer.

The specific details of other embodiments of the invention are included in the detailed description below.

By using the functional phenyl (meth)acrylamide compound according to the present invention, it is possible to easily prepare a photosensitive polymer and a chemically amplified resist composition having high sensitivity to light and excellent dry etching resistance.

In addition, the photosensitive polymer material prepared by using the functional phenyl (meth)acrylamide compound as a monomer has a structure advantageous for improving resist pattern profile in photopatterning.

Therefore, the resist composition obtained from the photosensitive polymer according to the present invention has superior dry etching properties and high sensitivity compared to conventional resist materials for KrF and ArF. have.

Hereinafter, embodiments of the present invention will be described in detail. However, this is presented as an example, and the present invention is not limited thereto, and the present invention is only defined by the scope of the claims to be described later.

Unless otherwise specified in the present specification, "alkyl" is a C1 to C20 alkyl group, more preferably a C1 to C12 alkyl group.

"lower alkyl" means a C1 to C4 alkyl group, "alkoxy" means a C1 to C20 alkoxy group, more preferably a C1 to C12 alkoxy group, "alkylene" means a C1 to C20 of an alkylene group, more preferably a C1 to C12 alkylene group, “aryl” means a C6 to C20 aryl group, more preferably a C6 to C12 aryl group, and “cycloalkyl” refers to a C3 to C12 aryl group. It means a C14 cycloalkyl group.

The functional phenyl (meth)acrylamide compound according to an embodiment of the present invention has a structure of the following formula (1).

[Formula 1]

where R1 is hydrogen or a methyl group,

R2 is hydrogen or a C1-C10 alkyl or alkenyl group, preferably consisting of hydrogen, hydroxy or the like.

The (meth)acrylamide compound can easily synthesize a photosensitive copolymer by radical polymerization with a (meth)acrylic monomer or a styrene-based monomer having various functional substituents.

The photosensitive copolymers prepared by the above method have etch resistance against dry etching, and at the same time have excellent adhesion properties to the underlying film quality, and have excellent light sensitivity properties, which is very advantageous for forming a resist pattern. As a result, the existing KrF or ArF resist material can serve as a sufficient etch mask even in a semiconductor device requiring higher resolution by overcoming the disadvantage of dry etching resistance.

The photosensitive polymer further comprises a repeating unit derived from a compound of Formulas 2, 3, and 4, together with a repeating unit composed of a functional phenyl (meth)acrylamide compound.

[Formula 2]

[Formula 3]

[Formula 4]

In the above formula, R3 and R5 are each independently hydrogen or a methyl group, and R4 is a substituent or lactone derivative that undergoes decomposition under a C4 to C20 acid catalyst. Here, the preferred substituent for acid decomposition may be selected from the group consisting of t-butyl, methyl cyclohexyl, ethyl cyclohexyl, methyl adamantyl, ethyl adamantyl, and the like.

In addition, as the lactone derivative, a lactone derivative group, preferably a substituent having the structures of the following Chemical Formulas 5 and 6, may be mentioned.

[Formula 5]

[Formula 6]

In Formula 5, two of X1 to X4 are each independently C=O and O, and the rest except for C=O and O are CR8 (where R8 is hydrogen, alkyl, or alkylene forming a fused ring with a pentagonal ring). .

In Formula 6, two of X5 to X9 are each independently C=O and O, and the rest except for C=O and O are CR9 (where R9 is hydrogen, alkyl, or alkylene forming a fused ring with a hexagonal ring) or ; X5 to X9 are all CR9 (wherein R9 is hydrogen, alkyl, or ester group-containing alkylene forming a fused ring with a hexagonal ring) and at least two R9s are linked to each other to form a lactone ring.

More preferred lactonyl groups for R4 are butyrolactonyl, valerolactonyl, 1,3-cyclohexanecarbolactonyl, 2,6-norbornanecarbonacton-5-yl, and 7-oxa-2,6 -norbornanecarbolactone-5-yl is selected from the group consisting of.

R6 is hydrogen; or an alkyl group or a cycloalkyl group including a polar group selected from the group consisting of a hydroxyl group, a carboxyl group, and combinations thereof. The alkyl group is a C2 to C14 alkyl group, and the cycloalkyl group is a C3 to C14 cycloalkyl group. Preferably, 2-hydroxyethyl, 3-hydroxy-1-adamantyl, etc. are mentioned.

R7 is hydrogen; or an alkyl group or a cycloalkyl group including a polar group selected from the group consisting of a hydroxyl group, a carboxyl group, a sulfonyl group, and combinations thereof. The alkyl group is a C2 to C14 alkyl group, and the cycloalkyl group is a C3 to C14 cycloalkyl group. Preferably, hydrogen, a hydroxyl group, fluorine, a methyl group, methoxy, etc. are mentioned.

That is, the photosensitive polymer has the form of a random copolymer of the functional phenyl (meth)acrylamide compound of Chemical Formula 1 and the compound of Chemical Formulas 2, 3 and 4. Preferably, the photosensitive polymer preferably has a weight average molecular weight (Mw) of 3,000 to 30,000. More preferably, it has a weight average molecular weight (Mw) of 5,000-20,000.

The photosensitive polymers according to the present invention are in the form of a copolymer obtained from a functional phenyl (meth)acrylamide compound, and have the advantage of obtaining a resist composition having very excellent dry etching and high sensitivity to light compared to conventional resist materials.

When the resist composition obtained therefrom is applied to a photolithography process, very good lithography performance can be obtained.

According to another embodiment of the present invention, there is provided a resist composition comprising the photosensitive polymer.

Specifically, the resist composition includes (a) a photosensitive polymer, (b) a photoacid generator (PAG), and (c) a solvent.

Hereinafter, each component included in the resist composition according to an embodiment of the present invention will be described in detail.

(a) photosensitive polymer

The photosensitive polymer is the same as described above. Here, the photosensitive polymer is preferably included in an amount of 5 to 50 parts by weight based on 100 parts by weight of the resist composition.

When included in the resist composition in the above content range, excellent etching resistance and high sensitivity characteristics can be obtained.

(b) photoacid generators (PAGs)

The photoacid generator may be selected from the group consisting of inorganic onium salts, organic sulfonates, and mixtures thereof. Specifically, a sulfonium salt or iodonium salt selected from triarylsulfonium salts, diaryliodonium salts, sulfonates, or mixtures thereof may be used. More preferably, triarylsulfonium triflate, diaryliodonium triflate, triarylsulfonium nonaflate, diaryliodonium nonaflate, succinimidyl triflate, 2,6-dinitrobenzyl sulfonate and mixtures thereof.

The photo-acid generator is preferably included in an amount of 1 to 10 parts by weight based on 100 parts by weight of the photosensitive polymer. If the content of the photo-acid generator is less than 1 part by weight, there is a fear that the exposure amount to the resist composition is excessively increased, and if it exceeds 10 parts by weight, there may be a problem of insufficient transmittance to the resist composition.

(c) solvents

The solvent is propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monomethyl ether (PGME), ethyl lactate (EL), cyclohexanone, 2-heptone (2-heptanone), gamma-butyro One or more types may be selected and used from the group consisting of lactones (GBL) and the like.

The solvent is included as the remaining component in the resist composition, and its content is not particularly limited, but is preferably included in an amount of 50 to 95 parts by weight based on 100 parts by weight of the resist composition.

(d) acid quencher

The resist composition may further include an organic base together with the components of (a) to (c) for the purpose of controlling the exposure amount and forming a resist profile.

The organic base is mainly composed of a trivalent amine (amine) form, for example, an amine-based compound selected from triethylamine, triisobutylamine, trioctylamine, triisodecylamine, triethanolamine or a mixture thereof. can

The content of the organic base is preferably included in an amount of 0.01 to 1 part by weight based on 100 parts by weight of the photosensitive polymer. If the content of the organic base is less than 0.01 part by weight, the desired effect cannot be expected, and when it exceeds 1 part by weight, the exposure amount is excessively increased, and in severe cases, there may be a problem that the pattern cannot be formed.

In order to form a desired pattern using the resist composition having the above composition, the following process is used.

A bare silicon wafer or a silicon wafer in which a lower film quality such as a silicon oxide film, a silicon nitride film or a silicon oxynitride film is formed on an upper surface is prepared, and the silicon wafer is treated with an HMDS treatment or an organic antireflection film. Thereafter, the resist composition is coated on the silicon wafer to a thickness of about 100 to 500 nm to form a resist film.

The silicon wafer on which the resist film is formed is prebaked (SB) in a temperature range of about 90 to 150° C. for about 60 to 120 seconds to remove the solvent, and various exposure sources, for example, KrF, ArF or EUV (extreme UV) After exposure using , E-beam, etc., post-exposure baking (PEB) is performed at a temperature of about 90 to 120° C. for about 60 to 120 seconds in order to cause a chemical reaction in the exposed region of the resist film.

Then, the resist film is developed with a 2.38 wt% tetramethylammonium hydroxide (TMAH) solution. In this case, the exposed part exhibits very high solubility in a basic aqueous developer solution, so that it is well dissolved and removed during development. When the used exposure source is an ArF excimer laser, a line and space pattern of 80 to 100 nm can be formed at a dose of about 5 to 30 mJ/cm 2 .

Using the resist pattern obtained from the process as described above as a mask, the underlying film quality such as a silicon oxide film is etched using a specific etching gas, for example, plasma such as a halogen gas or a CxFy gas. Then, a desired silicon oxide film pattern may be formed by removing the resist pattern remaining on the wafer using a stripper.

Hereinafter, the present invention will be described in more detail with reference to examples, but the following examples are only preferred examples of the present invention, and the present invention is not limited to the following examples.

Example-1) Synthesis of copolymer

4-hydroxyphenyl methacrylamide (20 mmol), γ-butyrolactonyl methacrylate (GBLMA) (40 mmol), and t-butyl methacrylate (40 mmol) were placed in a round flask and dioxane solvent (based on the total weight of monomers) 3 times), BPO (2% of monomer concentration) was added thereto as a polymerization initiator, purged with nitrogen for about 20 minutes, and then polymerized at 80° C. for about 20 hours.

After polymerization, the reactant was slowly precipitated in an excess of methanol/water co-solvent, the resulting precipitate was filtered, and the precipitate was again dissolved in an appropriate amount of THF and re-precipitated in methanol/water co-solvent. Thereafter, the obtained precipitate was dried in a vacuum oven at 80° C. for about 24 hours to synthesize a polymer (yield: 80%).

The weight average molecular weight (Mw) of the synthesized polymer was 14,900, and the degree of dispersion (Mw/Mn) was 1.7.

Example-2) Synthesis of photosensitive polymer

4-hydroxyphenyl methacrylamide (10 mmol), γ-butyrolactonyl methacrylate (GBLMA) (30 mmol), t-butyl methacrylate (40 mmol), and 3-hydroxy-1-adamantyl methacrylate A polymer was synthesized by polymerization of acrylate (HAMA) (20 mmol) in the same manner as in Example-1) (yield: 75%).

The weight average molecular weight (Mw) of the synthesized polymer was 15,100, and the degree of dispersion (Mw/Mn) was 1.7.

Example-3) Synthesis of photosensitive polymer

4-hydroxyphenyl methacrylamide (10 mmol), 2-hydroxyethyl methacrylate (30 mmol), t-butyl methacrylate (40 mmol), and 3-hydroxy-1-adamantyl methacrylate ( HAMA) (20 mmol) was polymerized in the same manner as in Example-1) to synthesize a polymer (yield: 78%).

At this time, the weight average molecular weight (Mw) of the obtained polymer was 14,500, and the dispersion degree (Mw/Mn) was 1.7.

Example-4) Synthesis of photosensitive polymer

4-hydroxyphenyl methacrylamide (20 mmol), γ-butyrolactonyl methacrylate (40 mmol), and 2-methyl-2-adamantyl methacrylate (HAMA) (40 mmol) in Example-1) A polymer was synthesized by polymerization in the same manner as described above (yield: 75%).

At this time, the weight average molecular weight (Mw) of the obtained polymer was 15,200, and the dispersion degree (Mw/Mn) was 1.7.

Example-5) Synthesis of photosensitive polymer

4-hydroxyphenyl methacrylamide (10 mmol), 2-hydroxyethyl methacrylate (20 mmol), γ-butyrolactonyl methacrylate (30 mmol), and 2-methyl-2-adamantyl methacryl A polymer was synthesized by polymerization of HAMA (40 mmol) in the same manner as in Example-1) (yield: 78%).

At this time, the weight average molecular weight (Mw) of the obtained polymer was 15,100, and the dispersion degree (Mw/Mn) was 1.8.

Example-6) Synthesis of photosensitive polymer

4-hydroxyphenyl methacrylamide (10 mmol), styrene (10 mmol), γ-butyrolactonyl methacrylate (40 mmol), and t-butyl methacrylate (40 mmol) were prepared in the same manner as in Example-1). was polymerized to synthesize a polymer (yield: 75%).

At this time, the weight average molecular weight (Mw) of the obtained polymer was 15,900, and the dispersion degree (Mw/Mn) was 1.7.

Example-7) Synthesis of photosensitive polymer

4-hydroxyphenyl methacrylamide (10 mmol), styrene (10 mmol), 2-hydroxyethyl methacrylate (40 mmol), and t-butyl methacrylate (40 mmol) were prepared in the same manner as in Example-1). was polymerized to synthesize a polymer (yield: 72%).

At this time, the weight average molecular weight (Mw) of the obtained polymer was 14,800, and the dispersion degree (Mw/Mn) was 1.7.

Example-8) Synthesis of photosensitive polymer

Phenyl acrylamide (10 mmol), 4-hydroxy styrene (10 mmol), 2-hydroxyethyl methacrylate (40 mmol), and t-butyl methacrylate (40 mmol) were prepared in the same manner as in Example-1). A polymer was synthesized by polymerization (yield: 65%).

At this time, the weight average molecular weight (Mw) of the obtained polymer was 14,300, and the dispersion degree (Mw/Mn) was 1.7.

Example-9) Synthesis of photosensitive polymer

Phenyl acrylamide (10 mmol), 4-hydroxy styrene (20 mmol), and t-butyl methacrylate (40 mmol), and 3-hydroxy-1-adamantyl methacrylate (30 mmol) were prepared in Example-1 ) to synthesize a polymer by polymerization in the same manner as (yield: 80%).

At this time, the weight average molecular weight (Mw) of the obtained polymer was 15,100, and the dispersion degree (Mw/Mn) was 1.7.

Example-10) Synthesis of photosensitive polymer

Phenyl acrylamide (10 mmol), styrene (10 mmol), and t-butyl methacrylate (40 mmol), and 3-hydroxy-1-adamantyl methacrylate (40 mmol) were prepared in the same manner as in Example-1). was polymerized to synthesize a polymer (yield: 75%).

At this time, the weight average molecular weight (Mw) of the obtained polymer was 15,500, and the dispersion degree (Mw/Mn) was 1.7.

Example-11) Synthesis of photosensitive polymer

Phenyl acrylamide (10 mmol), γ-butyrolactonyl methacrylate (20 mmol), and t-butyl methacrylate (40 mmol), and 3-hydroxy-1-adamantyl methacrylate (30 mmol) A polymer was synthesized by polymerization in the same manner as in Example-1) (yield: 70%).

At this time, the weight average molecular weight (Mw) of the obtained polymer was 15,900, and the dispersion degree (Mw/Mn) was 1.8.

Comparative Example) Synthesis of photosensitive polymer

t-Butyl methacrylate (40 mmol), γ-butyrolactonyl methacrylate (GBLMA) (40 mmol), and 3-hydroxy-1-adamantyl methacrylate (HAMA) (20 mmol) in Example- A polymer was synthesized by polymerization in the same manner as in 2) (yield: 80%).

At this time, the weight average molecular weight (Mw) of the obtained polymer was 15,900, and the dispersion degree (Mw/Mn) was 1.7.

Example-12) Preparation of resist composition and lithographic performance

Each of the photosensitive polymers (1 g) synthesized in Examples 2 to 11 and Comparative Examples was dissolved in PGMEA/EL (6/4) (17 g) together with triphenylsulfonium nonaplate (0.02 g), and then organic Each resist composition was prepared by adding triethanolamine (1 mg) as a base and completely dissolving it.

Example-13) Resist resolution evaluation

Each of the resist solutions prepared in Example 12) was filtered using a 0.1 μm membrane filter. The filtered resist solution was coated to a thickness of 140 nm on a silicon wafer treated with an organic BARC (AR46, Rhom & Hass Company) 600Å thick, and then pre-baked (soft baking: SB) at 130°C for 60 seconds.

After 20-50 mj/cm2 exposure using an ArF scanner (0.78NA, dipole), a post-exposure bake (PEB) was performed at 110°C for 60 seconds, and then developed in a 2.38 wt% TMAH solution for 60 seconds. As a result, a clean 90-100 nm L/S pattern result as shown in Table 1 below was obtained, and it was confirmed that the resolution was superior to that of the comparative example polymer.

polymer type Exposure energy (Eop) resolution Example 1 30mJ/cm2 90nm Example 2 30mJ/cm2 90nm Example 3 30mJ/cm2 90nm Example 4 30mJ/cm2 90nm Example 5 30mJ/cm2 90nm Example 6 30mJ/cm2 90nm Example 7 30mJ/cm2 100nm Example 8 30mJ/cm2 100nm Example 9 30mJ/cm2 90nm Example 10 30mJ/cm2 90nm Example 11 30mJ/cm2 90nm Comparative Example 30mJ/cm2 120nm

Example-14) Etch resistance evaluation

Bulk etching (composition; power 100W, pressure 5Pa, flow rate 30ml/min) condition in RIE (reactive ion etching) method to evaluate the etching properties of each resist composition prepared in Example-12) bulk etch) was evaluated. At this time, the reference used was evaluated by normalizing it based on the etching rate of polyhydroxystyrene (PHS) polymer, which is a resist for KrF. The measurement results are shown in Table 2, and in the case of the polymer of the present invention, the etching rate is approximately 1.1 times (normalized) compared to the polymer for KrF, respectively, and in the case of the polymer of the comparative example, the etching rate is about 1.5 times. It was confirmed that the polymers of the invention have very strong etch resistance.

polymer type Normalized (PHS) Etch rate (%) Example 1 100% 115 Example 2 100% 108 Example 3 100% 110 Example 4 100% 108 Example 5 100% 105 Example 6 100% 108 Example 7 100% 105 Example 8 100% 103 Example 9 100% 105 Example 10 100% 105 Example 11 100% 110 Comparative Example 100% 150

In the above, the present invention has been described in detail with reference to preferred embodiments, but the present invention is not limited to the above embodiments, and various modifications may be made by those skilled in the art within the scope of the technical spirit of the present invention. It is possible.

Claims (8)

A photosensitive polymer comprising a repeating unit derived from a phenyl (meth)acrylamide compound having the structure of Formula 1 below.
[Formula 1]

In the above formula, R1 is hydrogen or a methyl group, and R2 is hydrogen or a C1-C10 alkyl, alkenyl group, or hydroxy group. According to claim 1,
A photosensitive polymer further comprising a repeating unit derived from a compound of Formula 2, 3 or 4.
[Formula 2]

[Formula 3]

[Formula 4]

In the above formula, R3 and R5 are each independently hydrogen or a methyl group,
R4 is a substituent or lactone derivative that decomposes under a C4 to C20 acid catalyst,
R6 is hydrogen; or an alkyl group or a cycloalkyl group including a polar group selected from the group consisting of a hydroxyl group, a carboxyl group, and combinations thereof, the alkyl group is a C2 to C14 alkyl group, and the cycloalkyl group is a C3 to C14 cycloalkyl group,
R7 is hydrogen; or an alkyl group or a cycloalkyl group including a polar group selected from the group consisting of a hydroxyl group, a carboxyl group, a sulfonyl group, and combinations thereof. The alkyl group is a C2 to C14 alkyl group, and the cycloalkyl group is a C3 to C14 cycloalkyl group. 3. The method of claim 2,
The lactone derivative is a photosensitive polymer having a structure of Formula 5 or 6 below.
[Formula 5] [Formula 6]

In Formula 5, two of X1 to X4 are each independently C=O and O, and the rest except for C=O and O are CR8 (where R8 is hydrogen, alkyl, or alkylene forming a fused ring with a pentagonal ring). .
In Formula 6, two of X5 to X9 are each independently C=O and O, and the rest except for C=O and O are CR9 (where R9 is hydrogen, alkyl, or alkylene forming a fused ring with a hexagonal ring) or ; X5 to X9 are all CR9 (wherein R9 is hydrogen, alkyl, or ester group-containing alkylene forming a fused ring with a hexagonal ring), and at least two R9s are linked to each other to form a lactone ring. 3. The method of claim 2,
The photosensitive polymer is a photosensitive polymer having a weight average molecular weight (Mw) of 3,000 to 30,000. (a) the photosensitive polymer according to any one of claims 1 to 4;
(b) photoacid generators (PAGs); and
(c) a resist composition comprising an organic solvent. 6. The method of claim 5,
The photosensitive polymer is included in an amount of 5 to 50 parts by weight based on 100 parts by weight of the resist composition. 6. The method of claim 5,
The photo-acid generator is included in an amount of 1 to 10 parts by weight based on 100 parts by weight of the photosensitive polymer resist composition. 6. The method of claim 5,
The composition further comprises 0.01 to 1.0 parts by weight of the organic base based on 100 parts by weight of the photosensitive polymer.