KR102571936B1 - Materials for semiconductor manufacturing - Google Patents

Abstract

The present invention relates to a material for manufacturing a semiconductor, and more specifically, to a photosensitive polymer and a resist composition including a repeating unit derived from an aromatic sulfone compound represented by the following formula (1).
[Formula 1]

In the above formula, R1 is hydrogen or a methyl group, R2 is hydrogen; or an alkyl group or cycloalkyl group including a polar group selected from the group consisting of a hydroxyl group, a carboxyl group, a sulfonyl group, and combinations thereof. The alkyl group is a C1 to C14 alkyl group, and the cycloalkyl group is a C3 to C14 cycloalkyl group. Here, n is 0 to 2, and when n=0, only one adjacent oxygen exists.

Description

Materials for semiconductor manufacturing {MATERIALS FOR SEMICONDUCTOR MANUFACTURING}

The present invention relates to materials for manufacturing semiconductors, and more specifically, to materials for manufacturing semiconductors using a functional aromatic sulfone compound, a photosensitive polymer composed of the functional aromatic sulfone compound and excellent in high sensitivity characteristics of a resist and excellent dry etching resistance, and a resist composition containing the photosensitive polymer. will be.

Semiconductor manufacturing requires fine pattern formation as the semiconductor manufacturing process becomes complicated and the degree of integration of semiconductor devices increases. Accordingly, a resist material using an ArF excimer laser (193 nm) using a shorter wavelength than a resist material using a conventional KrF excimer laser (248 nm) is used even in a photoresist material for pattern formation essential for semiconductor manufacturing.

However, in a semiconductor device having a capacity of 16 gigabit or more, as the design rule requires a pattern size of 70 nm or less, the thickness of the resist film gradually decreases and the process margin in the process of etching the lower film is reduced. As the number of materials decreases, limitations are gradually emerging in the use of resist materials using ArF excimer lasers.

Resist materials used for lithography using such an ArF excimer laser have many problems in commercialization compared to conventional resist materials. The most typical problem is resistance to dry etching of the photosensitive resin.

As conventional ArF resists known so far, acrylic or methacrylic polymers have been mainly used. Among them, poly(methacrylate)-based polymer materials are most commonly used. A serious problem with these polymers is their very poor resistance to dry etching. That is, these materials have difficulty in performing an etching process because their selectivity is too low in a dry etching process using a plasma gas during a semiconductor device manufacturing process.

Accordingly, in order to increase resistance to dry etching, an alicyclic compound, which is a material having strong resistance to dry etching, such as an isobornyl group, an adamantyl group, or a tricyclo A method of introducing a tricyclodecanyl group or the like as a substituent of a polymer was used. However, in order to satisfy the solubility in the developing solution and the adhesive property to the lower film, which are the requirements of the photosensitive resin to satisfy the characteristics of the photoresist material, the polymer form mainly has a structure of more than a terpolymer, but these Since the portion occupied by the alicyclic group is small, resistance to dry etching is still weak. In addition, since an alicyclic compound is hydrophobic, if a large amount of an alicyclic compound is included in the above-described triple copolymer structure, the adhesive property of the resist film to the lower film quality is deteriorated.

As another polymer according to the prior art, a cycloolefin-maleic anhydride (COMA) alternating polymer has been proposed. In the production of COMA-type copolymers, while the production cost of raw materials is low, there are still problems in terms of synthesis yield and resolution during production of polymers.

In addition, the polymers synthesized with the above structure have a very hydrophobic alicyclic group as a backbone, and thus have poor adhesion properties to membranes. In addition, above all, in the case of the COMA type photosensitive resin, there is a problem of storage stability of the resist composition as a disadvantage.

Patent Document 1: KR 10-2013-0004905

The present invention is intended to provide a material for semiconductor manufacturing.

To this end, the present invention is intended to provide a novel aromatic sulfone compound that is easy to manufacture, has excellent resistance to dry etching and resist sensitivity, and is stable and can be conveniently applied to the production of photosensitive polymers.

The present invention is also intended to provide a photosensitive polymer having excellent resistance to dry etching and high sensitivity to light, including the novel aromatic sulfone compound as a monomer.

Another object of the present invention is to provide a resist composition capable of providing excellent lithography performance even in a lithography process using a light source in an extreme wavelength region such as 248 nm, 193 nm, and EUV (13.5 nm) using the photosensitive polymer.

However, the technical problems to be achieved by the present invention are not limited to the above-mentioned problems, and other technical problems will be clearly understood by those skilled in the art from the following description.

In order to achieve the above object, according to one embodiment of the present invention, a novel aromatic sulfone compound is used as a monomer to provide a photosensitive polymer including a repeating unit derived from the compound.

According to another embodiment of the present invention, a resist composition including the photosensitive polymer is provided.

Details of other embodiments of the present invention are included in the detailed description below.

A photosensitive polymer and a chemically amplified resist composition having high sensitivity to light and excellent dry etching resistance can be easily prepared using the novel aromatic sulfone compound according to the present invention.

In addition, the photosensitive polymer material prepared by using the novel aromatic sulfone compound as a monomer has etching resistance to dry etching and at the same time has a compound form having an aromatic sulfone functional group capable of reacting to light as its basic structure.

Therefore, the resist composition obtained from the photosensitive polymer according to the present invention has excellent dry etching characteristics and high sensitivity characteristics compared to existing resist materials for KrF and ArF, and can be very useful in manufacturing next-generation semiconductor devices in the future. there is.

Hereinafter, embodiments of the present invention will be described in detail. However, this is presented as an example, and the present invention is not limited thereby, and the present invention is only defined by the scope of the claims to be described later.

In this specification, unless otherwise specified, "alkyl" means a C1 to C20 alkyl group, more preferably a C1 to C12 alkyl group, "lower alkyl" means a C1 to C4 alkyl group, and "alkoxy" Means a C1 to C20 alkoxy group, more preferably a C1 to C12 alkoxy group, "alkylene" means a C1 to C20 alkylene group, more preferably a C1 to C12 alkylene group, "aryl " means a C6 to C20 aryl group, more preferably a C6 to C12 aryl group, and "cycloalkyl" means a C3 to C14 cycloalkyl group.

A novel aromatic sulfone compound according to an embodiment of the present invention has a structure represented by Chemical Formula 1 below.

[Formula 1]

In the above formula, R1 is hydrogen or a methyl group, R2 is hydrogen; or an alkyl group or cycloalkyl group including a polar group selected from the group consisting of a hydroxyl group, a carboxyl group, a sulfonyl group, and combinations thereof. The alkyl group is a C1 to C14 alkyl group, and the cycloalkyl group is a C3 to C14 cycloalkyl group. Preferable examples include hydrogen, hydroxyethyl, isopropyl and the like. Here, n is 0 to 2, and when n=0, only one adjacent oxygen exists.

The novel aromatic sulfone compound can be easily synthesized into a photosensitive copolymer by radical polymerization with a (meth)acrylic monomer or a styrene-based monomer having various functional substituents.

The photosensitive copolymers prepared as described above have etching resistance to dry etching, excellent adhesion to a lower film, and excellent light sensitivity, which are very advantageous in resist pattern formation. As a result, it can serve as a sufficient etching mask even in semiconductor devices requiring higher resolution by overcoming the disadvantage of dry etching resistance of existing KrF or ArF resist materials.

The photosensitive polymer may further include repeating units derived from compounds represented by Chemical Formulas 2, 3, and 4, together with repeating units composed of novel aromatic sulfone compounds.

[Formula 2]

[Formula 3]

[Formula 4]

In the above formula, R3 and R5 are each independently hydrogen or methyl, and R4 is an acid-labile group of C4 to C20 or a lactone derivative that decomposes in the presence of an acid catalyst.

Preferably, the acid decomposable group is norbornyl, isobornyl, cyclodecanyl, adamantyl, norbornyl substituted with a lower alkyl group, isobornyl substituted with a lower alkyl group, cyclodecanyl substituted with a lower alkyl group, or lower alkyl group. Substituted adamantyl, alkoxycarbonyl, alkoxycarbonylalkyl, amyloxycarbonyl, amyloxycarbonylalkyl, 2-tetrahydropyranyloxycarbonylalkyl, 2-tetrahydrofuranyloxycarbonylalkyl, tertiary It is selected from the group consisting of an alkyl group and an acetal group, more preferably 2-methyl-2-norbornyl, 2-ethyl-2-norbornyl, 2-methyl-2-isobornyl, 2-ethyl-2-isobornyl , 8-methyl-8-tricyclodecanyl, 8-ethyl-8-tricyclodecanyl, 2-methyl-2-adamantyl, 2-ethyl-2-adamantyl, 2-propyl-2-alpha Damantyl, t-butoxycarbonyl, t-butoxycarbonylmethyl, t-amyloxycarbonyl, t-amyloxycarbonylmethyl, 1-ethoxyethoxycarbonylmethyl, 2-tetrahydropyranyloxy Selected from the group consisting of carbonylalkyl, 2-tetrahydrofuranyloxycarbonylalkyl, t-butyl group, triethylcarbyl group, 1-methylcyclohexyl group, 1-ethylcyclopentyl group, t-amyl group and acetal group can be heard

In addition, the lactone derivative is a lactone derivative group, and preferably includes substituents having structures represented by Chemical Formulas 5 and 6 below.

[Formula 5]

[Formula 6]

In Formula 5, two of X1 to X4 are each independently C=O and O, and the rest excluding C=O and O are CR8 (where R8 is hydrogen, alkyl, or an alkylene forming a fused ring with a pentagonal ring) am.

In Formula 6, two of X5 to X9 are each independently C=O and O, and the rest excluding C=O and O are CR9 (where R9 is hydrogen, alkyl, or an alkylene forming a fused ring with a hexagonal ring) is; X5 to X9 are all CR9 (wherein R9 is hydrogen, an alkyl, or an ester group-containing alkylene forming a fused ring with a hexagonal ring), and at least two R9 are linked together to form a lactone ring.

More preferably, R4 is selected from butyrolactonyl, valerolactonyl, 1,3-cyclohexanecarbolactonyl, 2,6-norbonanecarbolacton-5-yl, and 7-oxa-2,6-norm. It is selected from the group consisting of bonancarbolactone-5-yl.

R6 is hydrogen; or an alkyl group or cycloalkyl group including a polar functional group selected from the group consisting of a hydroxyl group, a carboxyl group, and combinations thereof. The alkyl group is a C2 to C14 alkyl group, and the cycloalkyl group is a C3 to C14 cycloalkyl group. Preferably, 2-hydroxyethyl, 3-hydroxy-1-adamantyl, etc. are mentioned.

R7 is hydrogen; or an alkyl group or cycloalkyl group including a polar group selected from the group consisting of a hydroxyl group, a carboxyl group, a sulfonyl group, and combinations thereof. The alkyl group is a C2 to C14 alkyl group, and the cycloalkyl group is a C3 to C14 cycloalkyl group. Preferably, hydrogen, a hydroxyl group, fluorine, a methyl group, methoxy, etc. are mentioned.

The photosensitive polymer has a random copolymer form of the novel aromatic sulfone compound of Formula 1 and the compounds of Formulas 2, 3 and 4. Preferably, the photosensitive polymer preferably has a weight average molecular weight (Mw) of 3,000 to 30,000. More preferably, it has a weight average molecular weight (Mw) of 5,000 to 20,000.

In addition, the photosensitive polymer preferably has a degree of dispersion (Mw/Mn) of 1.5 to 2.5. Within the above range, excellent etching resistance and resolution may be exhibited.

The photosensitive polymers according to the present invention are in the form of copolymers obtained from novel aromatic sulfone compounds, and have an advantage in that a resist composition having excellent dry etching and high sensitivity to light characteristics can be obtained compared to conventional resist materials.

When the resist composition obtained therefrom is applied to a photolithography process, very excellent lithography performance can be obtained, which is advantageous for semiconductor manufacturing.

According to another embodiment of the present invention, a resist composition including the photosensitive polymer is provided.

Specifically, the resist composition includes (a) a photosensitive polymer, (b) a photoacid generator (PAG), and (c) a solvent.

Hereinafter, each component included in the resist composition according to an embodiment of the present invention will be described in detail.

(a) photosensitive polymer

The photosensitive polymer is the same as described above. Here, the photosensitive polymer is preferably included in an amount of 5 to 50 parts by weight based on 100 parts by weight of the resist composition.

When included in the resist composition in the above content range, excellent etching resistance and high sensitivity characteristics can be obtained.

(b) photoacid generator (PAG)

The photoacid generator may be selected from the group consisting of inorganic onium salts, organic sulfonates, and mixtures thereof. Specifically, a sulfonium salt or iodonium salt selected from triarylsulfonium salts, diaryliodonium salts, sulfonates, or mixtures thereof may be used. More preferably, triarylsulfonium triflate, diaryliodonium triflate, triarylsulfonium nonaplate, diaryliodonium nonaplate, succinimidyl triflate, 2,6-dinitrobenzyl sulfonate and mixtures thereof.

The photoacid generator is preferably included in an amount of 1 to 10 parts by weight based on 100 parts by weight of the photosensitive polymer. If the content of the photoacid generator is less than 1 part by weight, there is a concern that the exposure amount of the resist composition may be excessively increased, and if it exceeds 10 parts by weight, the transmittance of the resist composition may be insufficient.

(c) solvent

The solvent includes propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monomethyl ether (PGME), ethyl lactate (EL), cyclohexanone, 2-heptanone, gamma-butyro One or more types may be selected and used from the group consisting of lactone (GBL) and the like.

The solvent is included as the remaining components in the resist composition, and the content thereof is not particularly limited, but is preferably included in an amount of 50 parts by weight to 95 parts by weight based on 100 parts by weight of the resist composition.

(d) acid quenchers

The resist composition, together with the components (a) to (c), may further include an organic base for the purpose of adjusting the exposure amount and forming a resist profile.

The organic base is mainly composed of a trivalent amine (amine) form, for example, an amine-based compound selected from triethylamine, triisobutylamine, trioctylamine, triisodecylamine, triethanolamine or mixtures thereof may be used. can

The content of the organic base is preferably included in an amount of 0.01 to 1 part by weight based on 100 parts by weight of the photosensitive polymer. If the content of the organic base is less than 0.01 part by weight, the desired effect cannot be expected, and if it exceeds 1 part by weight, the exposure amount may be excessively increased, and in severe cases, pattern formation may not be possible.

In order to form a desired pattern using the resist composition having the above composition, the following process is used.

A bare silicon wafer or a silicon wafer having a lower surface such as a silicon oxide film, a silicon nitride film, or a silicon oxynitride film formed thereon is prepared, and the silicon wafer is treated with an HMDS treatment or an organic antireflection film. Thereafter, the resist composition is coated on the silicon wafer to a thickness of about 100 to 500 nm to form a resist film.

The silicon wafer on which the resist film is formed is prebaked (SB) at a temperature range of about 90 to 150 ° C. for about 60 to 120 seconds to remove the solvent, and various exposure light sources, such as KrF, ArF or extreme UV (EUV) ), after exposure using an E-beam, etc., post-exposure baking (PEB) is performed at a temperature range of about 90 to 120 ° C. for about 60 to 120 seconds to cause a chemical reaction in the exposed area of the resist film. .

Then, the resist film is developed with a 2.38wt% tetramethylammonium hydroxide (TMAH) solution. At this time, the exposed portion exhibits a very high solubility characteristic with respect to a basic aqueous solution developer, so that it is well dissolved and removed during development.

When the exposure light source used is an ArF excimer laser, a line and space pattern of 80 to 100 nm can be formed at a dose of about 5 to 30 mJ/cm 2 .

Using the resist pattern obtained from the process as described above as a mask, the underlying film material, such as a silicon oxide film, is etched using a plasma such as a specific etching gas, for example, a halogen gas or a CxFy gas. Subsequently, a desired silicon oxide film pattern may be formed by removing the resist pattern remaining on the wafer using a stripper.

The present invention will be described in more detail with reference to the following examples, but the following examples are only preferred examples of the present invention and the present invention is not limited to the following examples.

Example-1) Synthesis of monomers

Dissolve 17 g of Bis[4-(2-hydroxyethoxy)phenyl] Sulfone and 5.5 g of triethylamine (TEA) in THF (100 mL) in a 250 mL flask, then add 5 g of methacryloyl chloride (diluted in 30 mL of THF). The solution was slowly added dropwise and reacted at about 60 degrees for about 4 hours.

After the reaction was completed, an appropriate amount of the THF solvent was blown off by distillation under reduced pressure, the reactant was dropped into an excess of water, neutralized with dilute hydrochloric acid, extracted with diethyl ether, and column chromatography (hexane: ethyl acetate = 3:1) to obtain a monomer (yield: 50%).

Example-2) Synthesis of photosensitive polymer

Monomers synthesized in Example-1 (20 mmol), t-butyl methacrylate (40 mmol), γ-butyrolactonyl methacrylate (GBLMA) (20 mmol), and 3-hydroxy-1-adamantyl After putting methacrylate (HAMA) (20mmol) in a round flask and dissolving it in a dioxane solvent (3 times the total weight of the monomers), BPO (2% of the monomer concentration) was added thereto as a polymerization initiator and nitrogen was applied for about 20 minutes. After about purging, polymerization was performed at 80° C. for about 20 hours.

After the polymerization was completed, the reactants were slowly precipitated in an excess of methanol/water co-solvent, and the resulting precipitate was filtered, and then the precipitate was dissolved in an appropriate amount of THF and re-precipitated in methanol/water co-solvent. Thereafter, the obtained precipitate was dried in a vacuum oven at 80° C. for about 24 hours to synthesize a polymer (yield: 80%).

The synthesized polymer had a weight average molecular weight (Mw) of 15,100 and a degree of dispersion (Mw/Mn) of 1.7.

Example-3) Synthesis of photosensitive polymer

The monomer synthesized in Example-1 (20 mmol), t-butyl methacrylate (40 mmol), γ-butyrolactonyl methacrylate (GBLMA) (20 mmol), and 1-adamantyl methacrylate (20 mmol) ) was polymerized in the same manner as in Example-2) to synthesize a polymer (yield: 75%).

At this time, the weight average molecular weight (Mw) of the obtained polymer was 14,500, and the degree of dispersion (Mw/Mn) was 1.7.

Example-4) Synthesis of photosensitive polymer

The monomer (20 mmol) synthesized in Example-1), t-butyl methacrylate (40 mmol), γ-butyrolactonyl methacrylate (GBLMA) (20 mmol), and styrene (20 mmol) were prepared in Example-2 ) to synthesize a polymer by polymerization in the same way (yield: 75%).

At this time, the weight average molecular weight (Mw) of the obtained polymer was 15,200, and the degree of dispersion (Mw/Mn) was 1.7.

Example-5) Synthesis of photosensitive polymer

The monomer (20 mmol) synthesized in Example-1), t-butyl methacrylate (40 mmol), γ-butyrolactonyl methacrylate (GBLMA) (20 mmol), and 4-hydroxy styrene (20 mmol) A polymer was synthesized by polymerization in the same manner as in Example-2) (yield: 75%).

At this time, the weight average molecular weight (Mw) of the obtained polymer was 15,100, and the degree of dispersion (Mw/Mn) was 1.8.

Example-6) Synthesis of photosensitive polymer

Example-1) synthesized monomer (20mmol), t-butyl methacrylate (40mmol), γ-butyrolactonyl methacrylate (GBLMA) (20mmol), and isobornyl acrylate (20mmol) Polymerization was performed in the same manner as in -2) to synthesize a polymer (yield: 75%).

At this time, the weight average molecular weight (Mw) of the obtained polymer was 15,900, and the degree of dispersion (Mw/Mn) was 1.7.

Example-7) Synthesis of photosensitive polymer

The monomers (20 mmol) synthesized in Example-1), t-butyl methacrylate (40 mmol), 2-hydroxyethyl methacrylate (20 mmol), and isobornyl acrylate (20 mmol) were prepared in Example-2) A polymer was synthesized by polymerization in the same manner as in (yield: 70%).

At this time, the weight average molecular weight (Mw) of the obtained polymer was 14,800, and the degree of dispersion (Mw/Mn) was 1.7.

Example-8) Synthesis of photosensitive polymer

The monomer synthesized in Example-1 (20mmol), t-butyl methacrylate (20mmol), 2-hydroxyethyl methacrylate (30mmol), and 2-methyl-2-adamantyl methacrylate ( MAMA) (30 mmol) was polymerized in the same manner as in Example-2) to synthesize a polymer (yield: 75%).

At this time, the weight average molecular weight (Mw) of the obtained polymer was 14,300, and the degree of dispersion (Mw/Mn) was 1.7.

Example-9) Synthesis of photosensitive polymer

The monomers (20 mmol) synthesized in Example-1), γ-butyrolactonyl methacrylate (40 mmol), and 2-methyl-2-adamantyl methacrylate (40 mmol) were prepared in the same manner as in Example-2). A polymer was synthesized by polymerization using the method (yield: 80%).

At this time, the weight average molecular weight (Mw) of the obtained polymer was 15,100, and the degree of dispersion (Mw/Mn) was 1.7.

Example-10) Synthesis of photosensitive polymer

Example-2 ) to synthesize a polymer by polymerization in the same way (yield: 75%).

At this time, the weight average molecular weight (Mw) of the obtained polymer was 15,500, and the degree of dispersion (Mw/Mn) was 1.7.

Comparative Example) Synthesis of photosensitive polymer

Example- A polymer was synthesized by polymerization in the same manner as in 2) (yield: 80%).

At this time, the weight average molecular weight (Mw) of the obtained polymer was 15,900, and the degree of dispersion (Mw/Mn) was 1.7.

Example-11) Preparation of resist composition and lithography performance

After dissolving each of the photosensitive polymers (1g) synthesized in Examples-2 to 10) and Comparative Examples in PGMEA/EL (6/4) (17g) together with triphenylsulfonium nonaplate (0.02g) , Triethanolamine (1 mg), an organic base, was completely dissolved to prepare each resist composition.

Example-12) Evaluation of resist resolution

Each of the resist solutions prepared in Example-11) was filtered using a 0.1 μm membrane filter. The filtered resist solution was coated on an organic BARC (AR46, Rhom & Hass Company) 600 Å thick silicon wafer to a thickness of 140 nm, followed by pre-baking (soft baking: SB) at 130° C. for 60 seconds.

20~50mj/cm2 exposure was performed using an ArF scanner (0.78NA, dipole), followed by PEB (post-exposure bake) at 110°C for 60 seconds, followed by development in a 2.38% by weight TMAH solution for 60 seconds. As a result, a clean 90 ~ 100nm L / S pattern result was obtained as shown in Table-1 below, and it was confirmed that the resolution was excellent compared to the comparative example polymer.

polymer type Exposure Energy (Eop) resolution Example 2 30mJ/cm2 90 nm Example 3 30mJ/cm2 90nm Example 4 30mJ/cm2 90nm Example 5 30mJ/cm2 100 nm Example 6 30mJ/cm2 100 nm Example 7 30mJ/cm2 100 nm Example 8 30mJ/cm2 100 nm Example 9 30mJ/cm2 100 nm Example 10 30mJ/cm2 100 nm Comparative Example 30mJ/cm2 120 nm

Example-13) Evaluation of etching resistance

In order to evaluate the etch characteristics of each resist composition prepared in Example-11), bulk etching ( bulk etch) evaluation was performed. At this time, the reference used was normalized and evaluated based on the etching rate of polyhydroxystyrene (PHS) polymer, which is a resist for KrF. The measurement results are shown in Table-2. In the case of the polymer of the present invention, the etching rate is about 1.1 times (normalized) compared to the polymer for KrF, and in the case of the polymer of the comparative example, the etch rate is about 1.5 times It was confirmed that the polymers of the present invention have very strong etch resistance.

polymer type PHS (normalized) Etch rate (%) Example 2 100% 110 Example 3 100% 110 Example 4 100% 108 Example 5 100% 108 Example 6 100% 108 Example 7 100% 108 Example 8 100% 105 Example 9 100% 108 Example 10 100% 105 Comparative Example 100% 150

In the above, the present invention has been described in detail with preferred embodiments, but the present invention is not limited to the above embodiments, and various modifications may be made by those skilled in the art within the scope of the technical idea of the present invention. possible.

Claims (11)

A photosensitive polymer comprising a repeating unit derived from an aromatic sulfone compound represented by Formula 1 below.
[Formula 1]

In the above formula, R1 is hydrogen or a methyl group, and R2 is an alkyl group or cycloalkyl group including a hydroxyl group. The alkyl group is a C1 to C14 alkyl group, and the cycloalkyl group is a C3 to C14 cycloalkyl group. Here, n is 1-2. According to claim 1,
A photosensitive polymer further comprising a repeating unit derived from a compound represented by Formula 2, 3, or 4 below.
[Formula 2] [Formula 3] [Formula 4]

R3 and R5 are hydrogen or methyl, respectively, R4 is an acid-labile group or a lactone derivative of C4 to C20 that decomposes in the presence of an acid catalyst, R6 is hydrogen; It is an alkyl group or cycloalkyl group containing a polar group selected from the group consisting of a hydroxyl group, a carboxyl group, and combinations thereof. R7 is hydrogen; or an alkyl group or cycloalkyl group including a polar group selected from the group consisting of a hydroxyl group, a carboxyl group, a sulfonyl group, and combinations thereof. According to claim 2,
The acid decomposable group is norbornyl, isobornyl, cyclodecanyl, adamantyl, norbornyl substituted with a lower alkyl group, isobornyl substituted with a lower alkyl group, cyclodecanyl substituted with a lower alkyl group, or adamane substituted with a lower alkyl group. ethyl, alkoxycarbonyl, alkoxycarbonylalkyl, amyloxycarbonyl, amyloxycarbonylalkyl, 2-tetrahydropyranyloxycarbonylalkyl, 2-tetrahydrofuranyloxycarbonylalkyl, tertiary alkyl groups, and acetals A photosensitive polymer selected from the group consisting of groups. According to claim 2,
The lactone derivative is a photosensitive polymer having a structure of Formula 5 or 6 below.
[Formula 5] [Formula 6]

In Formulas 5 and 6, two of X1 to X4 are each independently C=O and O, and the rest excluding C=O and O are CR8 (where R8 is hydrogen, alkyl or a pentagonal ring and forms a fused ring) is an alkylene),
two of X5 to X9 are each independently C=0 and O, and other than C=0 and O are CR9, wherein R9 is hydrogen, alkyl or an alkylene forming a fused ring with a hexagonal ring; X5 to X9 are all CR9 (wherein R9 is hydrogen, an alkyl, or an ester group-containing alkylene forming a fused ring with a hexagonal ring), and at least two R9 are linked together to form a lactone ring. According to claim 2,
The photosensitive polymer is a photosensitive polymer having a weight average molecular weight (Mw) of 3,000 to 30,000 (a) the photosensitive polymer according to any one of claims 1 to 5;
(b) a photoacid generator (PAG); and
(c) A resist composition comprising an organic solvent. According to claim 6,
The photosensitive polymer is included in 5 to 50 parts by weight based on 100 parts by weight of the resist composition. According to claim 6,
The photoacid generator is included in 1 to 10 parts by weight based on 100 parts by weight of the photosensitive polymer. According to claim 6,
The resist composition of claim 1 , wherein the photoacid generator is any one selected from the group consisting of triarylsulfonium salts, diaryliodonium salts, sulfonates, and mixtures thereof. According to claim 6,
The resist composition further comprises 0.01 to 1.0 parts by weight of an organic base based on 100 parts by weight of the photosensitive polymer. According to claim 10,
wherein the organic base is selected from the group consisting of triethylamine, triisobutylamine, trioctylamine, triisodecylamine, triethanolamine, and mixtures thereof.