KR20220136661A - Clamp for disk type semiconductor stack - Google Patents

Clamp for disk type semiconductor stack Download PDF

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Publication number
KR20220136661A
KR20220136661A KR1020210042583A KR20210042583A KR20220136661A KR 20220136661 A KR20220136661 A KR 20220136661A KR 1020210042583 A KR1020210042583 A KR 1020210042583A KR 20210042583 A KR20210042583 A KR 20210042583A KR 20220136661 A KR20220136661 A KR 20220136661A
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South Korea
Prior art keywords
clamp
circumferential surface
holes
male
outer circumferential
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KR1020210042583A
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Korean (ko)
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KR102494494B1 (en
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정임홍
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(주)새명산전
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J3/00—Circuit arrangements for ac mains or ac distribution networks
    • H02J3/18—Arrangements for adjusting, eliminating or compensating reactive power in networks
    • H02J3/1821—Arrangements for adjusting, eliminating or compensating reactive power in networks using shunt compensators
    • H02J3/1835—Arrangements for adjusting, eliminating or compensating reactive power in networks using shunt compensators with stepless control
    • H02J3/1864—Arrangements for adjusting, eliminating or compensating reactive power in networks using shunt compensators with stepless control wherein the stepless control of reactive power is obtained by at least one reactive element connected in series with a semiconductor switch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
    • Y02E40/10—Flexible AC transmission systems [FACTS]

Abstract

The present invention relates to a clamp for a disk type semiconductor (SCR, IGCT, and IGBT) stack having a structure in which a male clamp is coupled to a T-shaped clamp in which a plurality of disk springs are fitted, via a female clamp. According to the present invention, a T-shaped clamp has a groove formed in a circumferential direction on an outer circumferential surface of an upper end of a shaft to which a disk spring is fitted. A male clamp has a plurality of through holes formed at regular intervals in a circumferential direction in a socket part at a lower end into which the upper end of the T-shaped clamp is inserted to be arranged adjacent to the groove inside and outside, and includes a plurality of balls respectively inserted into the through holes. Also, the female clamp is formed by dividing an inner circumferential surface coupled to an outer circumferential surface of the socket part into an upper contact inner circumferential surface and a lower receiving groove part. Accordingly, when the contact inner circumferential surface faces an outer circumferential surface of the through holes in accordance with a coupling position in a vertical axial direction with respect to the socket part, the T-shaped clamp and the male clamp are coupled to each other by allowing an inner end of each ball in the through holes to be received in the groove. In addition, when the receiving groove part faces the outer circumferential surface of the through-holes, an outer end of each ball of the through-holes is received in the receiving groove part to release the coupling between the T-shaped clamp and the male clamp. Accordingly, a conventional screw fastening method is improved to a one-touch method, such that fastening can be performed simply, quickly, and accurately.

Description

디스크 타입 반도체 스택용 클램프{CLAMP FOR DISK TYPE SEMICONDUCTOR STACK}CLAMP FOR DISK TYPE SEMICONDUCTOR STACK

본 발명은 고압전력설비로서 정지형 무효전력 보상장치인 스태콤(STATCOM: Static Synchronous Compensator)이나 SVC(Static Var Compensator)에 적용되는 디스크 타입의 반도체(SCR, IGCT, IGBT) 스택용 클램프에 관한 것이다.The present invention relates to a clamp for a disk-type semiconductor (SCR, IGCT, IGBT) stack applied to a static synchronous compensator (STATCOM) or a static var compensator (SVC), which is a static reactive power compensator as a high voltage power facility.

본 발명이 적용되는 디스크 타입 반도체(SCR, IGCT, IGBT) 스택(1)은 도 1에 도시된 바와 같이 상단의 클램프(10)를 체결함으로써 전체 스택(1)을 고정시켜 준다.The disk type semiconductor (SCR, IGCT, IGBT) stack 1 to which the present invention is applied fixes the entire stack 1 by fastening the clamp 10 at the top as shown in FIG. 1 .

종래의 클램프(10)는 도 2에 도시된 바와 같이 T형 클램프(11)에 다수의 접시 스프링(12)을 끼운 상태에서 플레이트(2)를 관통하고, 반대편(상측)으로는 암 클램프(13)와 수 클램프(14)를 나사식으로 회전시켜 결합하는 구조를 취하였다.As shown in FIG. 2, the conventional clamp 10 penetrates the plate 2 in a state where a plurality of disc springs 12 are inserted into the T-type clamp 11, and the female clamp 13 is opposite (upper side) to the opposite side (upper side). ) and the male clamp 14 were screwed to rotate to combine the structure.

그러나, 이와 같은 종래 클램프(10)의 나사식 체결 방식은 조립과 분해가 불편하고 시간이 많이 걸린다는 단점이 있었다.However, the screw fastening method of the conventional clamp 10 has a disadvantage that assembly and disassembly are inconvenient and take a lot of time.

따라서, 본 발명의 목적은 기존의 나사식 체결방식을 원터치 방식으로 개선함으로써 간편하면서도 신속, 정확하게 체결할 수 있는 디스크 타입 반도체 스택용 클램프를 제공하는 데 있다.Accordingly, an object of the present invention is to provide a clamp for a disk-type semiconductor stack that can be fastened simply, quickly, and accurately by improving the existing screw-type fastening method into a one-touch method.

상기 목적을 달성하기 위해 본 발명은 다수의 접시 스프링이 끼워진 T형 클램프에 암 클램프를 매개로 하여 수 클램프를 결합시킨 구조의 디스크 타입 반도체 스택용 클램프에 있어서, 상기 T형 클램프는 접시 스프링이 끼워지는 축의 상단부 외주면에 원주방향으로 그루브가 형성되고, 상기 수 클램프는 상기 T형 클램프의 상단부가 삽입되는 하단의 소켓부에 원주방향을 따라 일정한 간격으로 다수의 관통공이 형성되어 상기 그루브와 내외간 이웃하게 배치되고, 상기 다수의 관통공에 각각 삽입되는 다수의 볼을 포함하며, 상기 암 클램프는 상기 소켓부의 외주면에 결합하는 내주면이 상측의 접촉내주면부와 하측의 수용홈부로 구분하여 형성됨으로써 상기 소켓부에 대한 상하 축방향의 결합위치에 따라, 상기 접촉내주면부가 상기 다수의 관통공의 외주면에 대면하는 경우에는 상기 다수의 관통공 내 각 볼의 내측단부가 상기 그루브에 수용되게 함으로써 상기 T형 클램프와 상기 수 클램프를 서로 결합시키고, 상기 수용홈부가 상기 다수의 관통공의 외주면에 대면하는 경우에는 상기 다수의 관통공 내 각 볼의 외측단부가 상기 수용홈부에 수용되게 함으로써 상기 T형 클램프와 상기 수 클램프의 결합을 해제시키는 것을 특징으로 하는 디스크 타입 반도체 스택용 클램프를 제공한다.In order to achieve the above object, the present invention provides a clamp for a disk-type semiconductor stack having a structure in which a male clamp is coupled to a T-type clamp in which a plurality of disk springs are inserted through a female clamp, wherein the T-type clamp is fitted with a disk spring. A groove is formed in the circumferential direction on the outer peripheral surface of the upper end of the shaft, and in the male clamp, a plurality of through holes are formed at regular intervals along the circumferential direction in the socket part of the lower end into which the upper end of the T-type clamp is inserted, so that the groove and the inside and outside are adjacent to each other. and a plurality of balls respectively inserted into the plurality of through-holes, wherein the arm clamp has an inner circumferential surface coupled to the outer circumferential surface of the socket portion divided into an upper contact inner circumferential portion and a lower receiving groove portion, whereby the socket portion When the contact inner peripheral surface faces the outer peripheral surface of the plurality of through-holes, the inner end of each ball in the plurality of through-holes is accommodated in the groove, so that the T-type clamp and When the male clamps are coupled to each other, and when the receiving grooves face the outer circumferential surfaces of the plurality of through holes, the outer ends of the balls in the plurality of through holes are accommodated in the receiving grooves, whereby the T-type clamp and the male It provides a clamp for a disk-type semiconductor stack, characterized in that the clamp is released.

여기서, 상기 수 클램프의 소켓부 외주면에는 원주방향으로 일정한 간격으로 다수의 경사홈이 형성되고, 상기 암 클램프의 내주면에는 상기 다수의 경사홈에 수용되는 다수의 안내돌기가 형성됨으로써, 상기 암 클램프는 상기 수 클램프에 대해 상대적으로 회전함과 동시에 상하 축방향으로 상기 결합위치가 전환되는 구성을 취할 수도 있다.Here, a plurality of inclined grooves are formed on the outer peripheral surface of the socket part of the male clamp at regular intervals in the circumferential direction, and a plurality of guide protrusions accommodated in the plurality of inclined grooves are formed on the inner peripheral surface of the female clamp, so that the arm clamp is It may be configured to rotate relative to the male clamp and to switch the engaging position in the vertical axial direction at the same time.

그리고, 상기 암 클램프의 외주면에는 널링(nurling) 가공이 이루어진 구성을 취할 수도 있다.In addition, the outer peripheral surface of the arm clamp may take a configuration in which knurling (nurling) processing is made.

이상과 같이, 본 발명에 따른 디스크 타입 반도체 스택용 클램프에 의하면 수 클램프의 소켓부 외주면에 결합된 암 클램프를 상하 축방향으로 승강시키는 간단한 조작만으로도 그 내측에 수용되는 다수의 볼을 매개로 한 상기 수 클램프와 그 내측의 T형 클램프 간의 체결 및 체결해제를 달성할 수 있다. 이에 따라, 기존의 나사식 체결방식을 상기와 같은 원터치 방식으로 개선함으로써 간편하면서도 신속, 정확하게 클램프를 체결할 수 있다.As described above, according to the clamp for a disk-type semiconductor stack according to the present invention, the female clamp coupled to the outer circumferential surface of the socket part of the male clamp is lifted up and down in the axial direction only by a simple operation through the plurality of balls accommodated inside the clamp. It is possible to achieve fastening and disengaging between the male clamp and the T-clamp on the inside thereof. Accordingly, by improving the existing screw-type fastening method to the one-touch method as described above, it is possible to fasten the clamps simply, quickly and accurately.

도 1은 본 발명이 적용되는 디스크 타입 반도체 스택의 사시도,
도 2는 도 1에 적용되는 종래기술에 따른 디스크 타입 반도체 스택용 클램프가 설치된 모습의 단면도,
도 3은 본 발명의 실시예에 따른 디스크 타입 반도체 스택용 클램프의 사시도,
도 4는 도 3의 일 구성요소인 T형 클램프의 단면도,
도 5는 도 3의 일 구성요소인 암 클램프의 단면도,
도 6은 도 3의 일 구성요소인 수 클램프의 단면도,
도 7a 및 도 7b는 본 발명의 실시예에 따른 디스크 타입 반도체 스택용 클램프가 설치된 모습으로서 체결 및 체결해제 상태를 도시한 단면도,
도 8a 및 도 8b는 도 3에서 암 클램프의 조작에 따른 체결 및 체결해제 상태를 도시한 주요부의 투시도이다.1 is a perspective view of a disk-type semiconductor stack to which the present invention is applied;
2 is a cross-sectional view of a state in which a clamp for a disk-type semiconductor stack according to the prior art applied to FIG. 1 is installed;
3 is a perspective view of a clamp for a disk-type semiconductor stack according to an embodiment of the present invention;
4 is a cross-sectional view of a T-type clamp, which is a component of FIG. 3;
5 is a cross-sectional view of the arm clamp, which is one component of FIG. 3 ;
Fig. 6 is a cross-sectional view of a male clamp which is a component of Fig. 3;
7A and 7B are cross-sectional views illustrating a state in which a clamp for a disk-type semiconductor stack according to an embodiment of the present invention is installed and is fastened and unfastened;
8A and 8B are perspective views of main parts showing fastening and disengaging states according to operation of the arm clamp in FIG. 3 .

본 발명의 실시예에 따른 디스크 타입 반도체 스택용 클램프(20)는 도 3에 도시된 바와 같이 다수의 접시 스프링(22)이 끼워진 T형 클램프(21), 암 클램프(23)를 매개로 하여 상기 T형 클램프(21)에 결합하는 수 클램프(24)를 포함한다.As shown in FIG. 3 , the clamp 20 for a disk-type semiconductor stack according to an embodiment of the present invention includes a T-type clamp 21 in which a plurality of disc springs 22 are fitted and a female clamp 23 as a medium. and a male clamp (24) for coupling to a T-clamp (21).

T형 클램프(21)는 도 4에 도시된 바와 같이 축(21a)의 외주면으로 상기 접시 스프링(22)이 적층하여 끼워지고, 상기 축(21a)의 상단부 외주면에는 그루브(groove, 21b)가 원주방향으로 형성된다.As shown in FIG. 4 , the T-type clamp 21 is fitted with the disc spring 22 stacked on the outer circumferential surface of the shaft 21a, and a groove 21b is formed on the outer circumferential surface of the upper end of the shaft 21a. formed in the direction

암 클램프(23)는 도 5에 도시된 바와 같이 원통 형상의 내주면이 상측의 접촉내주면부(23a)와 하측의 수용홈부(23b)로 구분하여 형성된다. 접촉내주면부(23a)에는 다수의 안내돌기(23c)가 원주방향으로 일정한 간격으로 형성된다.As shown in FIG. 5, the arm clamp 23 has a cylindrical inner peripheral surface divided into an upper contact inner peripheral surface portion 23a and a lower receiving groove portion 23b. A plurality of guide projections 23c are formed at regular intervals in the circumferential direction on the contact inner peripheral surface portion 23a.

수 클램프(24)는 도 6에 도시된 바와 같이 하단을 이루는 소켓부(24a)에 다수의 관통공(24b)이 원주방향을 따라 일정한 간격으로 형성된다.As shown in FIG. 6 , the male clamp 24 has a plurality of through-holes 24b formed at regular intervals along the circumferential direction in the socket portion 24a forming the lower end.

상기와 같은 구성별 형상에 따라, 본 발명의 실시예에 따른 디스크 타입 반도체 스택용 클램프(20)는 도 7a에 도시된 바와 같은 결합구조로써 그 체결된 상태를 이룬다.According to the configuration for each configuration as described above, the clamp 20 for a disk-type semiconductor stack according to the embodiment of the present invention is in a fastened state with a coupling structure as shown in FIG. 7A .

플레이트(2)의 하부에서 이를 관통하는 T형 클램프(21)에는 다수의 접시스프링(22)이 끼워진 상태에서 축(21a)이 상측으로 돌출하고, 상기 축(21a)의 상단부 외주면으로는 수 클램프(24)의 소켓부(24a)가 끼워진다.A shaft 21a protrudes upward in a state where a plurality of plate springs 22 are fitted to the T-clamp 21 penetrating from the lower portion of the plate 2, and a male clamp is applied to the outer peripheral surface of the upper end of the shaft 21a. The socket portion 24a of (24) is fitted.

이때, 축(21a)의 외주면에 형성된 그루브(21b)는 소켓부(24a)에 형성된 관통공(24b)과 반경방향으로 내외간 이웃하게 배치된다. 이와 같이 연결된 그루브(21b)와 관통공(24b)에는 각기 볼(25)이 삽입되되, 상기 소켓부(24a)의 외주면으로는 암 클램프(23)가 결합하여 그 상측 내주면에 해당하는 접촉내주면부(23a)가 다수의 관통공(24b)의 외주면에 밀착 대면하게 됨으로써 관통공(24b) 내의 볼(25)의 내측단부가 그루브(21b)로 밀려 이에 수용되게 유지해준다. 이로써 T형 클램프(21)와 수 클램프(24) 간의 결합이 유지된다.At this time, the groove 21b formed on the outer circumferential surface of the shaft 21a is disposed adjacent to the through hole 24b formed in the socket portion 24a in the radial direction. The balls 25 are respectively inserted into the grooves 21b and the through-holes 24b connected in this way, and the female clamp 23 is coupled to the outer circumferential surface of the socket portion 24a and the contact inner circumferential portion corresponding to the upper inner circumferential surface thereof. 23a is brought into close contact with the outer peripheral surface of the plurality of through-holes 24b, so that the inner end of the ball 25 in the through-hole 24b is pushed into the groove 21b to be accommodated therein. This maintains the engagement between the T-shaped clamp 21 and the male clamp 24 .

이러한 T형 클램프(21)와 수 클램프(24) 간의 결합을 해제하기 위해서는 암 클램프(23)를 소켓부(24a)를 따라 도 7b에 도시된 바와 같이 상측으로 슬라이드시킨다. 이로 인해, 암 클램프(23)의 수용홈부(23b)가 소켓부(24a)측 다수의 관통공(24b)에 대면하도록 하여 관통공(24b) 내의 볼(25)이 수용홈부(23b)측으로 흘러나오게 함으로써 T형 클램프(21)와 수 클램프(24) 간의 결합이 해제된다.In order to release the coupling between the T-type clamp 21 and the male clamp 24, the female clamp 23 is slid upward along the socket part 24a as shown in FIG. 7B. For this reason, the ball 25 in the through hole 24b flows toward the receiving groove portion 23b so that the receiving groove portion 23b of the arm clamp 23 faces the plurality of through holes 24b on the socket portion 24a side. By releasing it, the coupling between the T-shaped clamp 21 and the male clamp 24 is released.

상기와 같은 작동원리는 도 8a 및 도 8b에서도 동일하게 확인할 수 있으며, 특히 수 클램프(24)의 소켓부(24a) 외주면에는 다수의 경사홈(24c)이 원주방향으로 일정한 간격으로 형성되도록 하여, 이들 경사홈(24c)에 암 클램프(23)측 접촉내주면부(23a)에 형성된 안내돌기(23c)가 각각 수용되게 한다. 이에 따라, 암 클램프(23)는 경사홈(24c)을 따라 나선상으로 정역 회동하는 방식으로 수 클램프(24)에 대해 상하 축방향으로 결합위치가 전환될 수 있다.The principle of operation as described above can also be confirmed in FIGS. 8a and 8b, and in particular, a plurality of inclined grooves 24c are formed at regular intervals in the circumferential direction on the outer peripheral surface of the socket part 24a of the male clamp 24, The guide projections 23c formed on the contact inner peripheral surface portion 23a on the side of the arm clamp 23 are accommodated in these inclined grooves 24c, respectively. Accordingly, the engagement position of the female clamp 23 can be switched in the vertical axial direction with respect to the male clamp 24 in a spirally forward and reverse rotation along the inclined groove 24c.

한편, 암 클램프(23)의 승강 조작, 자세히는 나선상으로의 회전조작을 보다 원활히 수행할 수 있도록 암 클램프(23)의 외주면에는 도 3에 도시된 바와 같이 널링(nurling, 23d) 가공을 행함이 바람직하다.On the other hand, as shown in FIG. 3 , it is preferable to perform knurling (23d) processing on the outer peripheral surface of the arm clamp 23 so that the lifting operation of the arm clamp 23, specifically, the spiral rotation operation can be performed more smoothly. do.

이상과 같이 설명된 디스크 타입 반도체 스택용 클램프(20)는 후술하는 청구범위 내지 그 균등범위에 의해 정의되는 본 발명의 권리범위 내지 기술적 범위를 한정하는 것으로 해석되어서는 안 된다.The clamp 20 for a disk-type semiconductor stack described above should not be construed as limiting the scope of the present invention or the technical scope defined by the claims to be described later and their equivalents.

20: 디스크 타입 반도체 스택용 클램프
21: T형 클램프
21a: 축
21b: 그루브(groove)
22: 접시스프링
23: 암 클램프
23a: 접촉내주면부
23b: 수용홈부
23c: 안내돌기
23d: 널링(nurling)
24: 수 클램프
24a: 소켓부
24b: 관통공
25: 볼20: Clamp for disk type semiconductor stack
21: T-type clamp
21a: axis
21b: groove
22: plate spring
23: arm clamp
23a: contact inner peripheral surface
23b: receiving groove
23c: guide projection
23d: nulling
24: male clamp
24a: socket part
24b: through hole
25: ball

Claims (3)

다수의 접시 스프링이 끼워진 T형 클램프에 암 클램프를 매개로 하여 수 클램프를 결합시킨 구조의 디스크 타입 반도체 스택용 클램프에 있어서,
상기 T형 클램프는 접시 스프링이 끼워지는 축의 상단부 외주면에 원주방향으로 그루브가 형성되고,
상기 수 클램프는 상기 T형 클램프의 상단부가 삽입되는 하단의 소켓부에 원주방향을 따라 일정한 간격으로 다수의 관통공이 형성되어 상기 그루브와 내외간 이웃하게 배치되고,
상기 다수의 관통공에 각각 삽입되는 다수의 볼을 포함하며,
상기 암 클램프는 상기 소켓부의 외주면에 결합하는 내주면이 상측의 접촉내주면부와 하측의 수용홈부로 구분하여 형성됨으로써 상기 소켓부에 대한 상하 축방향의 결합위치에 따라, 상기 접촉내주면부가 상기 다수의 관통공의 외주면에 대면하는 경우에는 상기 다수의 관통공 내 각 볼의 내측단부가 상기 그루브에 수용되게 함으로써 상기 T형 클램프와 상기 수 클램프를 서로 결합시키고, 상기 수용홈부가 상기 다수의 관통공의 외주면에 대면하는 경우에는 상기 다수의 관통공 내 각 볼의 외측단부가 상기 수용홈부에 수용되게 함으로써 상기 T형 클램프와 상기 수 클램프의 결합을 해제시키는 것을 특징으로 하는 디스크 타입 반도체 스택용 클램프.A clamp for a disk-type semiconductor stack having a structure in which a male clamp is coupled via a female clamp to a T-type clamp fitted with a plurality of disc springs,
The T-type clamp has a groove formed in the circumferential direction on the outer circumferential surface of the upper end of the shaft into which the disc spring is fitted,
In the male clamp, a plurality of through-holes are formed at regular intervals along the circumferential direction in the socket part of the lower end into which the upper end of the T-type clamp is inserted, and are disposed adjacent to the inside and outside of the groove,
It includes a plurality of balls respectively inserted into the plurality of through holes,
In the arm clamp, an inner circumferential surface coupled to the outer circumferential surface of the socket portion is divided into an upper contact inner circumferential portion and a lower accommodating groove portion, so that the contact inner circumferential portion passes through the plurality of penetrations according to the upper and lower axial coupling positions with respect to the socket portion When facing the outer circumferential surface of the ball, the T-type clamp and the male clamp are coupled to each other by allowing the inner end of each ball in the plurality of through-holes to be accommodated in the groove, and the receiving groove portion is the outer circumferential surface of the plurality of through-holes. The clamp for a disk-type semiconductor stack, characterized in that the coupling between the T-type clamp and the male clamp is released by allowing the outer end of each ball in the plurality of through-holes to be accommodated in the receiving groove. 제1항에 있어서,
상기 수 클램프의 소켓부 외주면에는 원주방향으로 일정한 간격으로 다수의 경사홈이 형성되고,
상기 암 클램프의 내주면에는 상기 다수의 경사홈에 수용되는 다수의 안내돌기가 형성됨으로써,
상기 암 클램프는 상기 수 클램프에 대해 상대적으로 회전함과 동시에 상하 축방향으로 상기 결합위치가 전환되는 것을 특징으로 하는 디스크 타입 반도체 스택용 클램프.According to claim 1,
A plurality of inclined grooves are formed at regular intervals in the circumferential direction on the outer peripheral surface of the socket part of the male clamp,
By forming a plurality of guide protrusions accommodated in the plurality of inclined grooves on the inner peripheral surface of the arm clamp,
The female clamp is rotated relative to the male clamp and the coupling position is switched in the vertical axial direction at the same time. 제2항에 있어서,
상기 암 클램프의 외주면에는 널링(nurling) 가공이 이루어진 것을 특징으로 하는 디스크 타입 반도체 스택용 클램프.3. The method of claim 2,
A clamp for a disk-type semiconductor stack, characterized in that a knurling process is performed on an outer circumferential surface of the arm clamp.
KR1020210042583A 2021-04-01 2021-04-01 Clamp for disk type semiconductor stack KR102494494B1 (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030040105A (en) * 2001-11-13 2003-05-22 가부시키가이샤 코스멕 Rotary clamp
KR20110041546A (en) * 2008-08-06 2011-04-21 파스칼 엔지니어링 가부시키가이샤 Clamp device
KR200460549Y1 (en) * 2011-09-02 2012-06-04 안정선 Grinding Wheel Flange
KR101648081B1 (en) * 2015-10-30 2016-08-16 주용준 Clamp Device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030040105A (en) * 2001-11-13 2003-05-22 가부시키가이샤 코스멕 Rotary clamp
KR20110041546A (en) * 2008-08-06 2011-04-21 파스칼 엔지니어링 가부시키가이샤 Clamp device
KR200460549Y1 (en) * 2011-09-02 2012-06-04 안정선 Grinding Wheel Flange
KR101648081B1 (en) * 2015-10-30 2016-08-16 주용준 Clamp Device

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