KR20220135015A - Solid state circuit breaker(sscb), current sensor of the sscb, and control method of the sscb and the current sensor - Google Patents

Abstract

The present invention relates to a solid state circuit breaker. A current sensor detects the occurrence of overcurrent according to the change in the magnitude of the current flowing into the semiconductor circuit breaker, transmits a signal notifying the occurrence of overcurrent to a control unit of a semiconductor circuit breaker, and determines whether the overcurrent is a noise overcurrent or a fault current based on an integral value obtained by integrating the magnitude of the current detected according to the time elapsed after the occurrence of the overcurrent. A semiconductor circuit breaker including the current sensor limits the amount of current that can be output from the semiconductor switch unit by limiting the gate voltage applied to the gate terminal of each semiconductor switch when an overcurrent occurs, and depending on the type of overcurrent determined by the current sensor, the gate drivers of each semiconductor switch are controlled so that the load and the semiconductor circuit breaker are cut off from the power system or the limited gate voltage is restored.

Description

A semiconductor circuit breaker, a current sensor of the semiconductor circuit breaker, and a control method of the semiconductor circuit breaker and the current sensor

The present invention relates to a semiconductor circuit breaker (SSCB) using a semiconductor switch for power and a current sensor provided in the semiconductor circuit breaker.

When a failure occurs in the power system that supplies power, abnormal currents such as overcurrent or fault current may flow into the load through the power system. And the introduced abnormal current may cause damage to the load. Therefore, when a failure of the power system occurs, a circuit breaker that cuts off the load from the power system in order to block the current inflow to the load in order to prevent the abnormal current from flowing into the load may be used.

On the other hand, in the case of a conventional mechanical circuit breaker, it takes a relatively long time of several tens of msec until the circuit is cut, and there is a problem that an abnormal current flows into the load during that time. Therefore, these days, a semiconductor circuit breaker (SSCB) capable of high-speed current interruption, including a semiconductor switch made of a power semiconductor having a high-speed switching frequency and capable of conducting a large current, is being used.

In the case of such a semiconductor circuit breaker, since the time for detecting a current is very short compared to a circuit breaker such as a molded case circuit breaker (MCCB), there is an advantage that the circuit can be broken at high speed.

On the other hand, in the case of an abnormal current that instantaneously increases but returns to a normal state within a short time, such as noise overcurrent or inrush current, it does not cause or is unlikely to cause damage to the load. When the circuit is cut off, the loss due to the blockage of the circuit may be rather large.

However, in the case of a semiconductor circuit breaker, since the current detection time is very short as described above, there is a problem in that the circuit is blocked even when a current that does not need to be interrupted or should not be interrupted is generated, such as the noisy overcurrent or inrush current. In addition, if the normal driving of the load is not maintained as such unnecessary circuit break is repeated, there is a problem that a corresponding loss may occur.

Therefore, the semiconductor circuit breaker distinguishes between the temporarily generated overcurrent (hereinafter referred to as noise overcurrent) and the fault current caused by a short circuit or a ground fault, and a method of not blocking the circuit when the noise overcurrent occurs is currently available. It is being actively researched.

The present invention aims to solve the above and other problems. A semiconductor circuit breaker and a method for controlling the semiconductor circuit breaker are provided.

In addition, in the present invention, when an overcurrent occurs, the generated overcurrent is classified as a noisy overcurrent or an accidental current and the result is transmitted to the semiconductor circuit breaker. An object of the present invention is to provide a current sensor capable of maintaining a state and a method for controlling the current sensor.

According to one aspect of the present invention to achieve the above or other object, in the present invention, in the current sensor provided in the semiconductor circuit breaker, the magnitude of the current from the voltage of the current flowing into any one of the semiconductor switches of the semiconductor circuit breaker A current detection unit for detecting a change, and as a result of detecting a change in the magnitude of the current, when the magnitude of the current increases, an integrator for integrating the magnitude of the current detected according to a time elapsed from a first time point at which the magnitude of the current is increased, and the When the current detection unit detects an increase in the current magnitude, an overcurrent detection signal indicating the occurrence of overcurrent is transmitted to the control unit of the semiconductor circuit breaker, and the value integrated according to the time elapsed from the first time point according to the integration result of the integrating unit and a detection control unit for transmitting a fault current detection signal indicating generation of a fault current to the control unit of the semiconductor circuit breaker according to a comparison result compared with a preset threshold value.

In an embodiment, the current detection unit detects a change in the magnitude of the current flowing from the power system based on a voltage between the source terminal and the drain terminal of the one semiconductor switch according to a desaturation fault detection (DESAT) method. It characterized in that it further comprises a semiconductor current detection unit.

In one embodiment, the detection control unit, as a result of the detection of the current detection unit, when the current level detected after the first time point is restored to a normal level, a current restoration signal indicating that the current state has been restored of the semiconductor circuit breaker It is characterized in that it is further transmitted to the control unit.

In an embodiment, the detection control unit controls the integrator to calculate an integrated value for a preset time after the first time point and compares the calculated value with the threshold value.

In an embodiment, the current sensor further comprises an initial charging circuit for preventing overcurrent from being detected by inrush current generated when one of the semiconductor switches is turned on, wherein the first time point is, It is characterized in that it is a point in time at which the magnitude of the current flowing into the one of the semiconductor switches increases as an overcurrent greater than the overcurrent absorbed by the hardware at the front end of the current detection unit including the initial charging circuit occurs.

In addition, according to one aspect of the present invention, in the method for controlling a current sensor provided in a semiconductor circuit breaker, the present invention includes detecting a change in the magnitude of the current from the voltage of the current flowing into any one of the semiconductor switches of the semiconductor circuit breaker. and transmitting an overcurrent detection signal for notifying the occurrence of an overcurrent when the magnitude of the current increases as a result of the detection to a control unit of the semiconductor circuit breaker; Integrating the magnitude of the current detected according to and transmitting a fault current detection signal indicating generation of a fault current to a control unit of the semiconductor circuit breaker when the value is greater than or equal to the threshold value.

In an embodiment, the change in the magnitude of the current is detected based on a voltage between the source terminal and the drain terminal of the one semiconductor switch according to a desaturation fault detection (DESAT) method.

In an embodiment, the comparing the integrated value with a preset threshold value includes: when the integrated value is less than the threshold value as a result of the comparison, a change in the magnitude of the current flowing into the one semiconductor switch Re-detecting, and transmitting a current restoration signal indicating that the current state is restored according to the re-detection result to a control unit of the semiconductor circuit breaker.

In an embodiment, the step of integrating the magnitude of the detected current is a step of integrating the magnitude of the detected current from after the first time point until a preset time elapses, and the integrated value is The step of comparing with the preset threshold value is characterized in that the step of comparing the value accumulated for the preset time with the preset threshold value.

In an embodiment, the current sensor further comprises an initial charging circuit for preventing overcurrent from being detected by inrush current generated when one of the semiconductor switches is turned on, wherein the first time point is, It is characterized in that it is a point in time when the magnitude of the current flowing into the one of the semiconductor switches increases as an overcurrent greater than the overcurrent absorbed by the hardware of the current sensor including the initial charging circuit occurs.

In addition, according to an aspect of the present invention, in the semiconductor circuit breaker including the current sensor, a cut-off switch for physically connecting or insulating the semiconductor circuit breaker and the load from the power system, and a gate terminal A semiconductor switch unit including a plurality of semiconductor switches in which a maximum amount of current supplied from the power system to the load is determined according to an applied gate voltage, and a gate voltage is applied to each gate terminal of the plurality of semiconductor switches is a plurality of gate drivers, the current sensor sensing the current flowing from the power system, and when an overcurrent detection signal indicating generation of an overcurrent is received from the current sensor, a limited gate voltage is applied to each gate terminal. A plurality of gate drivers are controlled, and when a fault current detection signal indicating generation of a fault current is received from the current sensor in a state where the gate voltage is limited, the circuit breaker and the load are controlled from the power system by controlling the cut-off switch. It is characterized in that it comprises a control unit to insulate.

In an embodiment, the limited gate voltage is a voltage lower than a normal gate voltage output by the gate driver in a normal operation state, and the plurality of semiconductor switches limits the maximum amount of output current as the gate voltage is limited. characterized by being

In an embodiment, the controller is configured to, when a current restoration signal indicating that the magnitude of the current flowing from the power system is restored from the current sensor in a state in which the gate voltage is limited, is received by the plurality of gate voltages to restore the limited gate voltage. It is characterized in that it controls the gate driver of

In an embodiment, when the overcurrent detection signal is received, the controller maintains a state in which the gate voltage is limited until the fault current detection signal or the current restoration signal is received.

According to another aspect of the present invention, in the method of controlling a semiconductor circuit breaker including the current sensor, a cut-off switch and a gate driver for applying a gate voltage to a plurality of semiconductor switches provided in the semiconductor circuit switch driving the devices to electrically connect between the power system and the load, and detecting whether an overcurrent detection signal indicating that an overcurrent is flowing from the power system is received from the current sensor, and the overcurrent detection signal is received In this case, controlling the gate drivers to apply the limited gate voltage, and controlling the gate drivers to apply the limited gate voltage, indicating that the fault current detection signal indicating the occurrence of the fault current or the current magnitude is restored checking whether a current restoration signal is received from the current sensor, and as a result of the check, controlling the cut-off switch according to the signal received from the current sensor to insulate the semiconductor circuit breaker and the load from the power system or controlling the plurality of gate drivers to restore the limited gate voltage.

In an embodiment, the limited gate voltage is a voltage lower than a normal gate voltage output by the gate driver in a normal operation state, and the plurality of semiconductor switches limits the maximum amount of output current as the gate voltage is limited. characterized by being

The effects of the semiconductor circuit breaker and the semiconductor circuit breaker control method according to the present invention will be described as follows.

According to at least one of the embodiments of the present invention, the current sensor of the semiconductor circuit breaker according to the present invention detects a current flowing into the semiconductor circuit breaker, and when the overcurrent is detected, whether the detected overcurrent is a noisy overcurrent or a fault current It is determined whether or not and the determination result is transmitted to the semiconductor circuit breaker. Therefore, since the semiconductor circuit breaker according to the present invention does not block the circuit in case of noise overcurrent according to the detection result of the current sensor, it is possible to prevent unnecessary circuit breakage due to the generation of the noise overcurrent.

In addition, the semiconductor circuit breaker according to an embodiment of the present invention limits the amount of current flowing in the circuit by limiting the gate driver output voltage of the semiconductor switch while the current sensor identifies the type of the introduced overcurrent. Accordingly, when the generated overcurrent is a fault current, it is possible to prevent damage to an internal circuit and a load due to the fault current flowing in during the time when the current sensor determines the type of the overcurrent.

1 is a circuit diagram illustrating a circuit structure of a semiconductor circuit breaker according to an embodiment of the present invention.
2 is a conceptual diagram for explaining an example in which a bidirectional current is conducted through a semiconductor circuit breaker according to an embodiment of the present invention.
3A is a circuit diagram illustrating a current sensor circuit structure of a semiconductor circuit breaker according to an embodiment of the present invention.
FIG. 3B is a block diagram illustrating the configuration of an overcurrent detection unit included in the current sensor illustrated in FIG. 3A .
4 is a graph showing an example of a noise overcurrent and a fault current through a current magnitude graph according to time.
5 is a flowchart illustrating an operation process in which a detection control unit determines an overcurrent in a current sensor of a semiconductor circuit breaker according to an embodiment of the present invention.
6 is a graph showing the difference in the amount of accumulated current with respect to the noise overcurrent and the fault current according to time.
7 is a flowchart illustrating an operation process in which a detection control unit determines whether an overcurrent exists before a predetermined time elapses in a current sensor of a semiconductor circuit breaker according to an embodiment of the present invention.
8 is a flowchart illustrating an operation process of a semiconductor circuit breaker according to an exemplary embodiment of the present invention according to the overcurrent determination result detected by the current sensor.

It should be noted that technical terms used herein are used only to describe specific embodiments, and are not intended to limit the present invention. Also, as used herein, the singular expression includes the plural expression unless the context clearly dictates otherwise. The suffixes "module" and "part" for the components used in the following description are given or mixed in consideration of only the ease of writing the specification, and do not have a meaning or role distinct from each other by themselves.

As used herein, "consisting of." or "includes." The term such as, etc., should not be construed as necessarily including all of the various components or steps described in the specification, some of which may not be included, or additional components or steps. It should be construed as being able to include more.

In addition, in describing the technology disclosed in this specification, if it is determined that a detailed description of a related known technology may obscure the gist of the technology disclosed in this specification, the detailed description thereof will be omitted.

In addition, the accompanying drawings are only for easy understanding of the embodiments disclosed in this specification, and the technical idea disclosed herein is not limited by the accompanying drawings, and all changes included in the spirit and scope of the present invention , should be understood to include equivalents or substitutes. In addition, each of the embodiments described below, as well as combinations of embodiments, are changes, equivalents, or substitutes included in the spirit and scope of the present invention, which may correspond to the spirit and scope of the present invention. .

First, in order to help a complete understanding of the present invention, the basic principle of the present invention is described. The present invention is to prevent a case in which a circuit is cut off even when a noisy overcurrent occurs due to a current detection time being too short. When the current sensor of the circuit breaker detects the overcurrent, it is possible to determine whether the introduced overcurrent is a fault current or a noise overcurrent based on a result of accumulating the magnitude of the overcurrent introduced for a predetermined time. And by transmitting the determination result to the semiconductor circuit breaker, even when noise overcurrent occurs, the semiconductor circuit breaker can maintain the circuit connection state.

Meanwhile, in the semiconductor circuit breaker according to an embodiment of the present invention, in order to prevent damage to the inside of the circuit and the load due to the current flowing in for the predetermined time during which the current sensor identifies the overcurrent when the fault current is introduced, the predetermined time During the period, it is possible to limit the output voltage of the gate drivers, which determines the amount of current output from each semiconductor switch. Accordingly, since the maximum amount of current that can flow through each semiconductor switch is reduced, it is possible to prevent the fault current from flowing into the load.

1 is a circuit diagram illustrating a circuit structure of a semiconductor circuit breaker 10 according to an embodiment of the present invention. And FIG. 2 is a conceptual diagram for explaining an example in which a bidirectional current is conducted through the semiconductor circuit breaker 10 according to an embodiment of the present invention.

Referring to FIG. 1 , the semiconductor circuit breaker 10 according to an embodiment of the present invention can be turned on/off between system A and system B and connected in series with each other. The semiconductor switch unit 110 including the first semiconductor switch 111 and the second semiconductor switch 112 , the cut-off switch 150 , the first and second gate drivers 141 and 142 , and the overvoltage suppressor 130 . , it may be configured to include a current sensor 160 and the SSCB control unit 100 .

Here, system A and system B may be different power systems. Alternatively, one of the grid A and the grid B may be a power grid and the other may be a load. 2 shows an example of a semiconductor circuit breaker 10 disposed between the A system and the B system to conduct a current between the A system and the B system or to block the flowing current.

Referring to (a) of FIG. 2 , in (a) of FIG. 2 it is assumed that system A is a power system and system B is a load. In this case, the current flow from the A system to the B system may be formed. On the other hand, when system A is a load and system B is a power system as shown in FIG. 2(b), a current flow from system B to system A may be formed.

In addition, both the A system and the B system may be a power system. For example, system A and system B may be different micro grids. In this case, as shown in (c) of FIG. 2, a bidirectional current flow from system A to system B as well as from system B to system A may be formed. And the current flow from the A system to the B system, the current flow from the B system to the A system, and the bidirectional current flow between the A system and the B system by the semiconductor circuit breaker 10 according to the embodiment of the present invention can be blocked.

For this bidirectional blocking, the first semiconductor switch 111 and the second semiconductor switch 112 block the circuit not only when the current flows from the A system to the B system, but also when the current flows from the B system to the A system. It can be formed to enable this. For example, the first semiconductor switch 111 and the second semiconductor switch 112 may be semiconductor switches including an N-channel MOSFET device in which a source and a drain are disposed in opposite directions.

The first semiconductor switch 111 and the second semiconductor switch 112 include first and second diodes disposed in the opposite direction to the current flow to prevent damage to the MOSFET device due to reverse voltage when the circuit is blocked by the fault current. 121, 122) may be further included. In this case, the anode and cathode of each of the first and second diodes 121 and 122 may be connected to the source terminal and the drain terminal of each of the MOSFET devices 111 and 112 .

Accordingly, the first diode 121 may be connected in parallel with the MOSFET device of the first semiconductor switch 111 to be disposed in the opposite direction to the current flowing from the A system to the B system. In addition, the second diode 122 may be connected in parallel with the MOSFET device of the second semiconductor switch 112 to be disposed in a direction opposite to the current flowing from the B system to the A system. As described above, the semiconductor circuit breaker 10 according to the embodiment of the present invention includes the first semiconductor switch 111 and the second semiconductor switch 112 configured in a complementary symmetric shape to block all fault currents flowing in both directions. can be formed to

Meanwhile, in the following description, it is assumed that system A is the power system and system B is the load for convenience of explanation. However, as described above, the semiconductor circuit breaker 10 according to the embodiment of the present invention is formed to block all fault currents flowing in both directions, and the present invention is not limited thereto.

In addition, the cut-off switch 150 may block the connection of the semiconductor circuit breaker 10 and the other system from any one system. The cut-off switch 150 may be a mechanical switch, and may physically insulate the semiconductor circuit breaker 10 to cut off an accidental power system.

The cut-off switch 150 may be disposed between the A system and the semiconductor switch unit 110 as shown in FIG. 1 . Meanwhile, the location of the cut-off switch 150 is not limited thereto, and of course, it may be disposed at any other location (eg, between the system B and the semiconductor switch unit 110 ).

Meanwhile, the overvoltage suppressor 130 may prevent an overvoltage from being formed at both ends of the semiconductor switch unit 110 due to a residual current when the semiconductor circuit breaker 10 breaks a circuit due to an accident current. The overvoltage suppressor 130 may include a snubber circuit or a device for suppressing overvoltage, for example, a Transient Voltage Suppressor (TVS) device. Alternatively, the overvoltage suppressor 130 may include free wheeling circuits formed of at least one diode and a resistor and connected to both ends of the semiconductor switch unit 110 , respectively.

In addition, the current sensor 160 detects a current flowing into the semiconductor circuit breaker 10 and, when the sensed current is an overcurrent, may determine whether it is a noisy overcurrent or a fault current. In addition, a detection signal corresponding to the determined type of overcurrent may be transmitted to the SSCB control unit 100 .

The current sensor 160 may include a diode for protecting an internal circuit when a high-voltage overcurrent flows in, and at least one voltage suppressor for lowering the voltage level of the current flowing into the semiconductor switch unit 110 . And when an overcurrent occurs, it is determined whether the generated overcurrent is a noise overcurrent or a fault current, and a result of the determination of the overcurrent can be transmitted to the SSCB control unit 100 .

The configuration of the current sensor 160 will be described with reference to FIGS. 3A and 3B below, and the process of detecting the occurrence of the overcurrent and identifying the type of the generated overcurrent by the current sensor 160 will be described with reference to FIG. 4 below. Let's take a look in detail.

Meanwhile, the current sensor 160 may be disposed between the semiconductor switch unit 110 and the cutoff switch 150 as shown in FIG. 1 . In this case, the current sensor 210 may detect the current supplied to the semiconductor switch unit 110 from the system A through the cut-off switch 150 . However, the present invention is not limited thereto, and may be disposed at any other location. For example, the current sensor 160 may be disposed between the semiconductor switch unit 110 and the system B to detect a current flowing between the semiconductor switch unit 110 and the system B.

Meanwhile, the first and second gate drivers 141 and 142 respectively apply gate voltages to the first and second semiconductor switches 111 and 112 constituting the semiconductor switch unit 110 under the control of the SSCB control unit 100 . can be authorized In this case, when a gate voltage exceeding the threshold voltage of each of the first and second semiconductor switches 111 and 112 is applied, the resistance of the output terminals of the first and second semiconductor switches 111 and 112 becomes smaller than that of the input terminals, and accordingly An input terminal and an output terminal of the first and second semiconductor switches 111 and 112 may be electrically connected to form a circuit between the system A and the system B.

In this case, as the applied gate voltage increases, the resistance of the output terminals of the first and second semiconductor switches 111 and 112 may decrease. Accordingly, a current may flow more easily through the semiconductor switch, and the amount of current allowed by the first and second semiconductor switches 111 and 112 , that is, the allowable current tolerance may be increased. Therefore, a larger current can be supplied from the power grid to the load.

On the other hand, when a gate voltage lower than the threshold voltage of each of the first and second semiconductor switches 111 and 112 is applied, or when no gate voltage is applied, the output terminal resistance of the first and second semiconductor switches 111 and 112 is applied. can be equal to or greater than the input resistance. Accordingly, the input and output terminals of the first and second semiconductor switches 111 and 112 may not conduct, and the A system and the B system may be electrically separated (insulated) from each other to cut off the circuit connection.

As such, in the case of the semiconductor switch, the resistance of the semiconductor switch output terminal may vary according to the voltage applied to the gate terminal through the gate driver, that is, the gate driver output voltage. In addition, the magnitude of the drain current, that is, the magnitude of the current that can be supplied through the semiconductor switches, may be determined according to the resistance of the semiconductor switch output terminal. Accordingly, the allowable current tolerance of each of the semiconductor switches 111 and 112 is determined according to the gate driver output voltage, and accordingly, the magnitude of the current supplied from the power system to the load may be determined.

Meanwhile, the SSCB control unit 100 of the semiconductor circuit breaker 10 according to an embodiment of the present invention may control a gate driver that applies a voltage to the gate terminals of each of the semiconductor switches 111 and 112 . For example, the SSCB controller 100 may control the output voltages of each of the gate drivers 141 and 142 so that each of the gate drivers 141 and 142 applies a voltage greater than the threshold voltage to the gate terminal of each semiconductor switch. .

In this case, since the resistance of the output terminals of each semiconductor switch 111 and 112 is reduced by the voltage (gate driver output voltage) applied through the gate drivers 141 and 142, the current supplied from the power system (system A) is It may be applied to a load (system B) through the semiconductor switches 111 and 112 .

Meanwhile, as described above, by using the characteristic that the allowable current tolerance of each semiconductor switch 111 and 112 is determined according to the output voltage applied from the gate drivers 141 and 142 , the SSCB control unit 100 controls the semiconductor circuit breaker ( 10), it is possible to limit the magnitude of the current flowing from one system to another.

That is, the SSCB control unit 100 of the semiconductor circuit breaker 10 according to an embodiment of the present invention may limit the output voltages of the gate drivers 141 and 142 according to the detection result of the current sensor 160 . . That is, when an overcurrent flows in, the SSCB control unit 100 sets a gate voltage lower than the voltage (gate voltage) applied to each gate terminal by the gate drivers 141 and 142 when the rated current flows in each semiconductor switch. The gate drivers 141 and 142 may be controlled to be applied to the gate terminals of (111, 112).

In this case, the allowable current tolerance of the semiconductor switches 141 and 142 may be reduced due to the lowered gate driver output voltage, and as a result, the amount of current output from the semiconductor switch unit 110 may be limited.

In addition, the SSCB control unit 100 may control the cut-off switch 150 according to the detection result of the current sensor 160 . That is, the SSCB control unit 100 determines that the semiconductor circuit breaker 10 is connected to the A system (blocking switch on) when the incoming overcurrent is a noise overcurrent as a result of detection of the current sensor 160 . can keep

Accordingly, even when an overcurrent flows, the semiconductor circuit breaker 10 may be connected to the A system, and in this case, the A system and the B system may be electrically conducted via the semiconductor circuit breaker 10 . Then, a current having a magnitude according to the allowable current tolerance of the semiconductor switch unit 110 may be supplied from the A system to the B system.

On the other hand, when the incoming current is an accident current as a result of detection of the current sensor 160 , the semiconductor switch unit 110 and the cut-off switch 150 may be controlled to cut off the connection between the system A and the system B.

On the other hand, when the generated overcurrent is a noisy overcurrent, the magnitude of the incoming current may be restored to a normal magnitude when a predetermined time elapses. Then, the current sensor 160 transmits a detection signal indicating that the current state is restored to the SSCB control unit 100, and the SSCB control unit 100 restores the output voltages of the gate drivers 141 and 142 to a normal state to the semiconductor switch unit. Allowable current tolerance of (110) can be restored.

Meanwhile, in the above description, the semiconductor switch including the N-channel MOSFET device has been described as an example, but the present invention is not limited thereto. For example, the first and second semiconductor switches 111 and 112 are all devices capable of being turned on/off by the gate drive voltage applied by the SSCB controller 100, for example, IGBT, GTO, IGCT, etc. Of course, it is also possible to use instead of the MOSFET device.

Meanwhile, FIG. 3A is a circuit diagram illustrating a circuit structure of the current sensor 160 of the semiconductor circuit breaker 10 according to an embodiment of the present invention.

Referring to FIG. 3A , the current sensor 160 of the semiconductor circuit breaker 10 according to an embodiment of the present invention is generated by the channel resistance Rds between the drain terminal and the source terminal of the semiconductor switch 111 . Current for measuring the current flowing into the semiconductor switch according to the DESAT (Desaturation Fault Detection) method of measuring the magnitude of the current based on the voltage drop between the drain terminal and the source terminal and the voltage Vds between the drain terminal and the source terminal A sensor (hereinafter referred to as a semiconductor current sensor) 303 may be included. Here, the semiconductor current sensor 303 may be a current sensor embedded in a semiconductor device. For the convenience of the following description, it is assumed that system A is a power system that supplies current to a load or another power system (system B), and the current sensor 160 detects the current flowing into the semiconductor switch unit 110 from the system A. It is assumed that this will be explained. In this case, as shown in FIG. 1 , the current sensor 160 may detect a current flowing from the A system to the first semiconductor switch 111 , and accordingly, the current sensor 160 may detect the current flowing from the power system. It is assumed that a semiconductor switch connected to detect a current is the first semiconductor switch 111 (hereinafter, referred to as a semiconductor switch).

To this end, the current sensor 160 may be connected to the drain terminal of the semiconductor switch 111 as shown in FIG. 3A . In addition, a voltage between the source terminal and the drain terminal of the semiconductor switch 111 may be sensed through the semiconductor current sensor 303 of the detection unit 300 . In this case, when a high-voltage current flows, it is turned off and may include an overvoltage protection diode (High Voltage Block Diode) 310 for protecting the circuit inside the current sensor 160, and determining whether the overcurrent is present The voltage level may include a voltage drop unit 320 for lowering the voltage level sensed by the semiconductor current sensor 303 . The voltage drop unit 320 may include at least one zener diode 321 and a resistor 322 .

Meanwhile, when the semiconductor switch 111 is switched from an off state to an on state, the current sensor 160 includes an initial charging circuit 330 for preventing overcurrent detection due to inrush current caused by the initial driving of the semiconductor switch 111 . ) may be further included. The initial charging circuit 330 may include at least one capacitor to absorb an overcurrent (inrush current) according to the initial driving of the semiconductor switch 111 .

As described above, when the current sensor 160 is formed including the voltage drop unit 320 including the overvoltage protection diode 310 , the Zener diode 321 , and the resistor 322 , the semiconductor current sensor of the detection unit 300 . The voltage sensed at 303 is the voltage Vds between the drain terminal and the source terminal of the semiconductor switch 111 , the shear voltage of the overvoltage protection diode 310 , the voltage across both ends of the Zener diode 321 , and the resistance of the resistor 322 . It may be formed by the sum of the voltages at both ends.

Meanwhile, the detection unit 300 may include a bias current source or a bias resistor 301 for switching the overvoltage protection diode 310 to the on state to determine the overcurrent when the semiconductor switch 111 is in the on state. In addition, when the semiconductor switch 111 is turned off, it may include an initialization unit 302 that initializes the state of the current detection line by lowering the voltage so that the overvoltage protection diode 310 is turned off. In addition, it may be formed to include an overcurrent detection unit 350 for detecting an overcurrent by comparing the voltage sensed by the semiconductor current sensor 303 with a preset reference voltage.

FIG. 3B is a block diagram illustrating the configuration of an overcurrent detection unit included in the current sensor illustrated in FIG. 3A .

As described above, in the case of a noisy overcurrent in which a current larger than the rated current is temporarily generated due to a noise phenomenon such as a disturbance or an electromagnetic phenomenon, it means a current that is temporarily generated as much as is caused by the noise phenomenon. As an example of such a noisy overcurrent, there may be an inrush current that occurs between the power system and the load during energization and is several to several tens of times larger than the electric current and occurs for several cycles.

On the other hand, the fault current refers to a current much larger than the rated current that occurs due to an accident such as a short-circuit accident or a ground fault. have.

Therefore, in the case of the noise overcurrent, since the current state is restored to a normal level of current after a certain period of time has elapsed, the possibility of damage to the load and the like is not large. Therefore, it is not necessary to cut off the noise-related overcurrent, and it is more preferable to prevent unnecessary circuit blocking by not blocking the circuit in the case of a noisy over-current in consideration of losses caused by interruption of the power supply to the load.

On the other hand, in the case of a fault current, an overcurrent may continuously flow in, and thus the load may be damaged. In this case, in order to prevent damage to the load, it is desirable to protect the load or other power system by cutting off the connection with the power system into which the fault current flows.

Therefore, when the overcurrent is detected, the overcurrent detecting unit 350 of the current sensor 160 according to an embodiment of the present invention determines whether the generated overcurrent is caused by a noise overcurrent or an accidental current, and returns the determined result. By transmitting to the SSCB control unit 100, the SSCB control unit 100 maintains the connection state with the power system into which the overcurrent flows or blocks the connection with the power system.

To this end, the overcurrent detection unit 350 of the current sensor 160 according to an embodiment of the present invention may include an integrator 352 , a storage unit 353 , and a detection control unit 351 .

First, the integrator 3352 calculates the total amount of current flowing in for a certain time, that is, the current integration amount, according to the voltage change of the overcurrent detected for a certain time when an overcurrent occurs under the control of the detection controller 351 . can

To this end, the integrator 352 may integrate a current value corresponding to the voltage detected by the semiconductor current sensor 303 for the predetermined time. For example, the integrator 352 converts the voltage detected by the semiconductor current sensor 303 into a current value, and integrates the change in the current value for the predetermined time to calculate the current integrated amount for the predetermined time. can

The detection control unit 351 may compare the current integration amount calculated by the integrator 352 with a preset threshold value. In addition, it may be determined whether the generated overcurrent is a noisy overcurrent or a fault current based on the comparison result. In addition, a notification signal corresponding to the determined type of overcurrent may be transmitted to the SSCB control unit 100 . Also, the detection control unit 351 may determine a current value flowing into the semiconductor switch 111 based on the voltage detected by the semiconductor current sensor 303 , and when the determined current value is restored to the rated current level, A notification signal indicating that the current state is restored may be transmitted to the SSCB control unit 100 .

Meanwhile, the storage unit 353 may include various data related to the control of the detection control unit 351 . For example, the storage unit 353 may store information on the threshold value as reference data for determining the type of overcurrent based on the accumulated current value.

Also, the storage unit 353 may store information about a time during which the integrator 352 integrates the current value, that is, the predetermined time. Here, the threshold value and the predetermined time may be an optimized threshold value and time determined by the results of an experiment related to the present invention performed a plurality of times. Alternatively, the threshold value and the predetermined time may be determined by a user.

Hereinafter, with reference to FIGS. 4 to 7 , the detection control unit 351 of the current sensor 160 according to an embodiment of the present invention controls the integrator 352 and determines according to the integration result of the integrator 352 . An operation process of transmitting a notification signal corresponding to the overcurrent to the SSCB control unit 100 will be described in detail.

First, FIG. 4 is a graph showing an example of a noise-related overcurrent and a fault current through a graph of the magnitude of the current over time.

Referring to FIG. 4 , both the noise overcurrent and the fault current maintain a constant level of current until the first time point t _{off_1} , and the current level rapidly increases from the time point when the first time point t _{off_1} elapses. it can be seen that Even if overcurrent occurs, the current sensor 160 is a voltage drop unit 320 composed of an overvoltage protection diode 310, a Zener diode 321 and a resistor 322, and an initial charging circuit 330. This is because, by including the configuration, the hardware according to the additional configuration can absorb a certain level of overcurrent by itself.

For example, since the initial charging circuit 330 can absorb overcurrent as much as the capacitance of the provided capacitor, only when an overcurrent exceeding the capacity absorbed by the initial charging circuit 330 occurs, the semiconductor current sensor ( 303) may increase the current value detected.

That is, until the first time point t _{off_1} , it is difficult to detect a current value by the current sensor 160 , and it is a time point exceeding the total amount of overcurrent absorbed by the additional configuration, that is, the first time point t _{off_1} ). Thereafter, the current value detected by the semiconductor current sensor 303 may increase.

On the other hand, as shown in FIG. 4 , in the case of the noisy overcurrent 401 , when a predetermined time elapses after the overcurrent occurs, the current gradually decreases, and when the second time point t _{off_2} , the current state becomes the rated current level can be restored to

On the other hand, in the case of the fault current 402, the current state is not restored as an overcurrent generated due to an accident as the cause. Accordingly, as shown in FIG. 4 , an overcurrent may be continuously introduced.

5 is a flowchart illustrating an operation process in which the detection control unit 351 determines the type of overcurrent in the current sensor 160 of the semiconductor circuit breaker 10 according to an embodiment of the present invention.

Referring to FIG. 5 , when connected to the power system according to the driving of the cut-off switch 150, the detection control unit 351 may detect a change in the magnitude of the current flowing into the semiconductor switch 111 from the power system ( S500). Here, the magnitude of the current detected by the detection controller 351 may be a current corresponding to the voltage detected by the semiconductor current sensor 303 .

Then, as a result of detecting the change in the magnitude of the current, the detection control unit 351 may determine whether the current starts to increase ( S502 ). For example, when the current flowing from the power system is less than the absorption amount according to the hardware characteristics of the current sensor 160, the current detected in step S500 may be constantly maintained. That is, when a current of a rated current level is detected, or when a current less than an absorption amount according to the hardware characteristic increases, the voltage detected by the semiconductor current sensor 303 may be constantly maintained. Then, the detection control unit 351 may detect a current flowing into the semiconductor switch 111 and repeat steps S500 and S502 of detecting a change in the magnitude of the current.

However, as a result of the determination in step S502, when an overcurrent exceeding the absorption amount according to the hardware characteristics occurs, the voltage detected by the semiconductor current sensor 303 may be increased (the first time point t _{off_1} in FIG. 4 ) Then), accordingly, the detection control unit 351 may determine that the overcurrent is introduced from the power system. Accordingly, the detection control unit 351 may transmit a signal for notifying that the current overcurrent is flowing, that is, an overcurrent detection signal, to the SSCB control unit 100 ( S504 ).

Meanwhile, when the overcurrent detection signal is transmitted, the detection controller 351 controls the integrator 352 to integrate the detected current value according to the time elapsed from the time when the current starts to increase (the first time t _{off_1} ). It can be done (S506). Then, it is detected whether a preset time has elapsed (S508), and if the preset time has not elapsed, the process may proceed to step S506 again to continuously integrate the current value detected over time.

On the other hand, if the preset time has elapsed as a result of the detection in step S508, it is possible to determine whether the integral value is equal to or greater than the threshold value by comparing the integrated value, that is, the integral value with a preset threshold value (S510). .

Here, the preset time, like the second time point t _{off_2} of FIG. 4 , may be a time determined based on a time at which the current value is restored due to the characteristic of the noisy overcurrent. In this case, the preset time may be a time from the first time point t _{off_1} to the second time point t _{off_2} of FIG. 4 , that is, ΔT _CB . In this case, the integrated amount of the current integrated for the preset time, that is, the integrated value may be expressed as in Equation 1 below.

Here, F(i) is an integral value, t _{off_1} is a time point at which an increase in the detected current value starts, t _{off_2} is a time point determined according to a preset time value, i is a current value, and t is t _{off_1} to t _{off_2} means the time until

Meanwhile, as described above, the noisy overcurrent 401 is generated for a predetermined time and then naturally disappears. Therefore, in the case of noise overcurrent, the accumulated current is increased for the predetermined time, and the current value is restored as the predetermined time elapses and is no longer integrated. On the other hand, in the case of a fault current, since the current value is not restored, an overcurrent continuously flows in and the accumulated current continuously increases.

6 is a graph showing the difference in the amount of accumulated current with respect to the noise overcurrent and the fault current according to time.

FIG. 6A is a graph illustrating a change in the current integration amount F(i) with respect to the noisy overcurrent 401 of FIG. 4 . And FIG. 6 (b) is a graph showing a change in the current integration amount (F(i)) with respect to the fault current (402).

Referring to (a) and (b) of FIG. 6 , it can be seen that, in the case of the initial detection of overcurrent, since both the noisy overcurrent 401 and the fault current 402 abruptly increase the current, the amount of accumulated current also increases sharply. . However, in the case of the noisy overcurrent 401, the overcurrent is resolved after a certain period of time and the current state is restored to the rated current level. is slowed, and as the predetermined time elapses, the current integration amount no longer occurs.

On the other hand, in the case of the fault current 402, an overcurrent may continuously flow in as described above. Accordingly, as shown in (b) of FIG. 6 , the current integration amount F(i) may continue to increase.

Therefore, as a result of integrating the current of the noisy overcurrent 401, the threshold value Ic is greater than the accumulated current for the predetermined time and smaller than the accumulated current of the fault current 402 corresponding to the predetermined time. When it is determined, the detection control unit 351 may determine the currently generated overcurrent as either a fault current or a noise overcurrent according to a result of comparing the current integration amount, that is, the integral value and the determined threshold value Ic.

Therefore, the threshold value Ic may be a measure for determining the sensitivity of the current sensor 160 according to an embodiment of the present invention. The possibility increases, and when the threshold value Ic is set to be large, the possibility of determining the generated overcurrent as a noise overcurrent may increase.

The threshold value Ic may be set by the user arbitrarily. Alternatively, the threshold value Ic may be a value determined based on statistical values according to accumulated amounts of noisy overcurrent collected through a plurality of experimental results related to the present invention.

Meanwhile, as a result of comparing the integral value and the preset threshold value as a result of the detection in step S510 , if the integral value is greater than or equal to the threshold value, the detection control unit 351 determines that the overcurrent flowing into the semiconductor switch 111 is caused by the fault current. can judge Accordingly, the detection control unit 351 may transmit a fault current detection signal notifying that the fault current has occurred to the SSCB control unit 100 (S512).

On the other hand, as a result of comparing the detection result of step S510 with the preset threshold value, if the integral value is less than the threshold value, the detection control unit 351 receives the semiconductor switch ( 111), it may be detected whether or not the state of the current flowing in is restored (S514).

As an example, the detection control unit 351 may determine that the state of the current flowing into the semiconductor switch 111 is restored when the voltage detected by the semiconductor current sensor 303 is restored to the rated voltage level as a result of the detection in step S514 . . Then, the detection control unit 351 may transmit a current restoration signal notifying that the current state is restored to the SSCB control unit 100 (S512).

The detection control unit 351 may control the initialization unit 302 to initialize the state of the current detection line ( S518 ). In addition, the process proceeds to step S500 to detect a current flowing into the semiconductor switch 111 . Accordingly, the accumulated current calculated so far is initialized, and the process from step S500 to step S518 may be performed again according to a change in the detected current.

On the other hand, looking at the process of FIG. 5 described above, when the overcurrent is detected, the current sensor 160 according to the embodiment of the present invention determines whether it is a noise overcurrent or a fault current. An overcurrent detection signal indicating occurrence of an overcurrent may be transmitted.

Therefore, even when the overcurrent is detected, the SSCB control unit 100 may maintain the state in which the power system and the load or other power system are connected until the overcurrent is determined as the fault current. Therefore, when the detected overcurrent is a noisy overcurrent, the state in which the circuit is connected can be maintained.

On the other hand, if the detected overcurrent is a fault current rather than a noise overcurrent, the overcurrent according to the fault current may be directly supplied to the load or other power system until the overcurrent is determined as the fault current. In this case, there is a risk that the load or other components of the power system may be damaged by the fault current.

Accordingly, when the overcurrent detection signal is transmitted from the current sensor 160, the SSCB control unit 100 of the semiconductor circuit breaker 10 according to the embodiment of the present invention prevents damage due to overcurrent, each of the semiconductor switches 111 and 112. ) by limiting the gate voltage applied to the gate terminal to limit the allowable current output through each of the semiconductor switches 111 and 112 .

Meanwhile, the SSCB control unit 100 maintains a state of limiting the allowable current tolerance of each semiconductor switch 111 and 112 through the gate voltage limit until the fault current detection signal or the current restoration signal is transmitted from the current sensor 160 . can In addition, when the fault current detection signal is received, the cutoff switch 150 may be turned off to cut off a load or another power system receiving the current from the power system to which the current is supplied.

On the other hand, when the current restoration signal is received, the SSCB control unit 100 may restore the limited gate voltage to release the limited allowable current tolerance. Hereinafter, the operation process of the SSCB control unit 100 that controls the gate driver outputting the gate voltage of each semiconductor switch 111 according to a signal transmitted from the current sensor 160 according to an embodiment of the present invention is described with reference to FIG. 8 . So let's take a closer look.

Meanwhile, in FIG. 5 described above, it is detected whether a predetermined time has elapsed, and when the predetermined time has elapsed, a value accumulated through integration for the predetermined time is compared with a preset threshold value, and the currently generated overcurrent is noise-related. Although it is determined whether it is an overcurrent or a fault current, if the integrated value is equal to or greater than a preset threshold value, it is of course also possible to determine the current generated overcurrent as the fault current even before the lapse of the predetermined time.

To this end, the detection control unit 351 may determine whether the integral value integrated to date is equal to or greater than the threshold value even before the predetermined time has elapsed in step S506, and according to the result, the fault current detection signal is transmitted to the SSCB control unit. (100) can be transmitted.

7 is a flowchart illustrating an operation process in which the detection control unit 351 determines whether an overcurrent is present before a predetermined time elapses in the current sensor 160 of the semiconductor circuit breaker 10 according to an embodiment of the present invention.

Referring to FIG. 7 , the detection control unit 351 according to an embodiment of the present invention detects when the preset time has not elapsed in step S508 of FIG. 5 , after the first time point t _{off_1} when the current value starts to increase. It is possible to integrate the current value from to the present time (S700). In addition, it may be detected whether the integral value integrated so far is equal to or greater than the threshold value (S702).

And if the integrated value integrated so far is equal to or greater than the threshold as a result of the detection in step S702, the detection control unit 351 may transmit a fault current detection signal informing the SSCB control unit 100 that a fault current has occurred (S704). ).

Therefore, even before the preset time elapses, when the integral value exceeds the threshold value, the fault current detection signal is directly transmitted to the SSCB controller 100 without waiting until the predetermined time has elapsed, so that the SSCB controller 100 ) can control the cut-off switch 150 more quickly to protect the load or other power system from the power system into which the fault current flows.

On the other hand, if it is determined in step S702 that the integral value to date is less than the threshold, the detection control unit 351 may proceed to step S508 of FIG. 5 to determine whether a preset time has elapsed. In addition, when the preset time has elapsed, in step S510 of FIG. 5 , it may be detected whether the value accumulated for the preset time, ie, the integral value, is equal to or greater than the threshold value.

However, if it is determined in step S508 that the preset time has not elapsed, the detection control unit 351 may proceed to step S700 again and integrate the current value from the first time point t _{off_1} to the current time point. . Then, according to the determination result of step S702, the fault current detection signal may be transmitted (S704) or the process of entering step S508 of FIG. 5 may be performed again.

Meanwhile, in the above description, the current sensor 160 of the semiconductor circuit breaker 10 according to the embodiment of the present invention detects the occurrence of overcurrent, identifies whether the detected overcurrent is a noise overcurrent or a fault current, and identifies the result The operation process of transmitting to the SSCB control unit 100 that controls the overall operation of the semiconductor circuit breaker 10 has been described.

In the following description, the operation process of the SSCB control unit 100 for controlling the operation of the semiconductor circuit breaker 10 according to the detection signal received from the current sensor 160 according to the embodiment of the present invention is shown in FIG. Let's take a look and see.

8 is a flowchart illustrating an operation process of the semiconductor circuit breaker 10 according to an embodiment of the present invention according to the overcurrent identification result detected from the above-described current sensor 160 .

Referring to FIG. 8 , the SSCB control unit 100 of the semiconductor circuit breaker 10 according to an embodiment of the present invention first turns on the cut-off switch 150 to supply a current to the power system and the load (or other power system). ) may be connected via the semiconductor circuit breaker 10 . And by driving the provided current sensor 160, it is possible to detect the current flowing from the power system (S800).

In this case, the SSCB control unit 100 controls the gate drivers 141 and 142 of each of the semiconductor switches 111 and 112 so that a predetermined gate voltage is applied to the gate terminals of each of the semiconductor switches 111 and 112 . ) can be driven. Accordingly, conduction may occur between the input terminal and the output terminal of each semiconductor switch according to the output voltage of the gate drivers, that is, the gate voltage, and accordingly, the power system and the load (or other power system) pass through the semiconductor circuit breaker 10 . can be electrically connected.

In such a state that the power system and the load (or other power system) are connected, the SSCB control unit 100 may check whether an overcurrent detection signal is received from the current sensor 160 ( S802 ). And when the overcurrent detection signal is received from the current sensor 160, the SSCB control unit 100 may control each of the gate drivers 141 and 142 so that the output voltage is limited to a certain level (S804).

Then, each of the gate drivers 141 and 142 may apply a lower voltage than a voltage output in a normal state to the gate terminal of each of the semiconductor switches 111 and 112 . Accordingly, the resistance difference between the input terminal and the output terminal of each of the semiconductor switches 111 and 112 is reduced, and the maximum amount of current that can flow through each of the semiconductor switches 111 and 112, that is, the allowable current tolerance can be reduced.

Then, the magnitude of the current output from the semiconductor switch unit 110 may be limited according to the reduced allowable current tolerance. Here, the current limited according to the reduced allowable current tolerance may be less than or equal to the allowable current in the semiconductor circuit breaker 10 .

Meanwhile, in step S804, when the output voltage of the gate driver is limited, the SSCB control unit 100 checks whether a current restoration signal indicating that the current level flowing from the power system is restored is received from the current sensor 160. It can be (S806).

And if the current restoration signal is received, the gate driver output voltage limited in step S804 may be restored to a normal level voltage (S808). Accordingly, the voltage applied to the gate terminal is increased to a normal voltage, and the allowable current tolerance of each of the semiconductor switches 111 and 112 may be restored. Then, the SSCB control unit 100 may proceed to step S802 again to check whether an overcurrent detection signal is received from the current sensor 160 .

Meanwhile, if the current restoration signal is not received in step S806, the SSCB control unit 100 may check whether a fault current detection signal is received from the current sensor 160 (S810).

And if it is determined that the fault current detection signal is not received as a result of the check in step S810, the process proceeds to step S806 to check whether a current recovery signal indicating that the current level flowing into the semiconductor switch unit 110 has been restored is received. can Then, according to the check result, it is possible to restore the gate driver output voltage by going to step S808 , or to check whether the fault current detection signal is received from the current sensor 160 again in step S810 .

On the other hand, as a result of the check in step S810, if the fault current detection signal is received, the SSCB control unit 100 may determine that the current flowing from the power system is an overcurrent according to the fault current. Therefore, the SSCB control unit 100 blocks the connection between the power system and the load (or other power system) in which the fault current has occurred by controlling the cut-off switch 150 to protect the load (or other power system) from the fault current. It can be done (S812).

As described above, when an overcurrent is detected, the current sensor 160 according to an embodiment of the present invention provides an overcurrent detection signal indicating that the overcurrent has occurred before determining whether the overcurrent is a noise overcurrent or a fault current. Transmits to the SSCB control unit 100, when the overcurrent detection signal is received, the fault current detection signal indicating that the overcurrent is a fault current is received from the current sensor 160, or the current state is restored It allows the gate driver to remain in the state of limiting the output voltage until a current recovery signal indicating that it has been reached is received.

Therefore, the semiconductor circuit breaker 10 according to an embodiment of the present invention may not block the connection between the power system and the load (or other power system) despite the occurrence of the overcurrent.

In addition, the semiconductor circuit breaker 10 according to an embodiment of the present invention limits the allowable current tolerance output through the semiconductor switch unit 110 through limiting the output voltage of the gate driver even when the current inflow overcurrent is a fault current. , it is possible to prevent the load or other power system from being damaged due to the overcurrent flowing during the time when the overcurrent is determined as the fault current.

The control method of the SSCB control unit 100 for controlling the semiconductor circuit breaker 10 related to the present invention described above and the detection control unit 351 for controlling the current sensor 160 of the semiconductor circuit breaker 10, the program is recorded It is possible to implement it as computer-readable code on a medium that has been created. The computer-readable medium includes all types of recording devices in which data readable by a computer system is stored.

Examples of computer-readable media include Hard Disk Drive (HDD), Solid State Disk (SSD), Silicon Disk Drive (SDD), ROM, RAM, CD-ROM, magnetic tape, floppy disk, optical data storage device, etc. There is also a carrier wave (eg, transmission over the Internet) that is implemented in the form of. In addition, the computer may include the SSCB control unit 100 of the semiconductor circuit breaker 10 or the detection control unit 351 of the current sensor 160 .

Accordingly, the detailed description should not be construed as restrictive in all respects and should be considered as illustrative. The scope of the present invention should be determined by a reasonable interpretation of the appended claims, and all modifications within the equivalent scope of the present invention are included in the scope of the present invention.

10: semiconductor circuit breaker
100: SSCB control unit 110: semiconductor switch unit
111: first semiconductor switch 112: second semiconductor switch
121: first diode 122: second diode
130: overvoltage suppressor 141: first gate driver
142: second gate driver 150: cut-off switch
160: current sensor

Claims (16)

In the current sensor provided in the semiconductor circuit breaker,
a current detector for detecting a change in the magnitude of the current from the voltage of the current flowing into any one of the semiconductor switches of the semiconductor circuit breaker;
as a result of detecting the change in the magnitude of the current, when the magnitude of the current increases, an integrator integrating the magnitude of the current detected according to a time elapsed from a first time point at which the magnitude of the current is increased; and,
When the detection result of the current detection unit increases the current level, an overcurrent detection signal indicating the occurrence of overcurrent is transmitted to the control unit of the semiconductor circuit breaker, and according to the integration result of the integrator, it is integrated according to the time elapsed from the first time point. and a detection control unit configured to transmit a fault current detection signal indicating generation of fault current to the control unit of the semiconductor circuit breaker according to a comparison result of comparing the value with a preset threshold value. According to claim 1, wherein the current detection unit,
Based on the voltage between the source terminal and the drain terminal of the one semiconductor switch according to the DESAT (Desaturation fault detection) method, it further comprises a semiconductor current detection unit for detecting a change in the magnitude of the current flowing from the power system. current sensor. According to claim 1, wherein the detection control unit,
As a result of the detection of the current detector, when the current level detected after the first time point is restored to a normal level, the current sensor further transmits a current restoration signal indicating that the current state is restored to the controller of the semiconductor circuit breaker . According to claim 1, wherein the detection control unit,
The current sensor, characterized in that by controlling the integrator to calculate an integrated value for a preset time after the first time point, and compare the calculated value with the threshold value. According to claim 1,
The current sensor is
Further comprising an initial charging circuit for preventing overcurrent from being detected by inrush current generated when any one of the semiconductor switches is turned on,
The first time point is
The current sensor, characterized in that, as an overcurrent greater than or equal to the overcurrent absorbed by the hardware at the front end of the current detection unit including the initial charging circuit occurs, it is a point in time when the magnitude of the current flowing into the one semiconductor switch increases. In the control method of a current sensor provided in a semiconductor circuit breaker,
detecting a change in the magnitude of the current from the voltage of the current flowing into any one of the semiconductor switches of the semiconductor circuit breaker;
transmitting an overcurrent detection signal for notifying the occurrence of overcurrent to a control unit of the semiconductor circuit breaker when the magnitude of the current increases as a result of the detection;
integrating the magnitude of the detected current according to a time elapsed from the first time point at which the increase in the magnitude of the current is detected;
comparing an integrated value for a time elapsed from the first time point and a preset threshold value according to the integration result; and,
and transmitting a fault current detection signal indicating generation of a fault current to a control unit of the semiconductor circuit breaker when the integrated value is equal to or greater than the threshold as a result of the comparison. According to claim 6, The change in the magnitude of the current,
A control method of a current sensor, characterized in that the detection is performed based on a voltage between a source terminal and a drain terminal of the one semiconductor switch according to a desaturation fault detection (DESAT) method. 7. The method of claim 6,
The step of comparing the integrated value with a preset threshold value,
re-detecting a change in the magnitude of the current flowing into the one semiconductor switch when the integrated value is less than the threshold value as a result of the comparison; and,
and transmitting a current restoration signal indicating that the current state is restored according to the re-detection result to a control unit of the semiconductor circuit breaker. 7. The method of claim 6,
Integrating the magnitude of the detected current comprises:
Integrating the magnitude of the detected current from after the first time point until a preset time elapses,
The step of comparing the integrated value with a preset threshold value,
The method of controlling a current sensor, characterized in that the step of comparing the value accumulated for the preset time with the preset threshold value. 7. The method of claim 6,
The current sensor is
Further comprising an initial charging circuit for preventing overcurrent from being detected by inrush current generated when any one of the semiconductor switches is turned on,
The first time point is
The control method of a current sensor, characterized in that when the amount of the current flowing into the one of the semiconductor switches increases as an overcurrent greater than the overcurrent absorbed by the hardware of the current sensor including the initial charging circuit occurs. The semiconductor circuit breaker comprising the current sensor of claim 1,
a disconnect switch that physically connects or insulates the semiconductor circuit breaker and the load from the power system;
a semiconductor switch unit including a plurality of semiconductor switches in which a maximum amount of current supplied from the power system to the load is determined according to a gate voltage applied to a gate terminal;
a plurality of gate drivers for applying a gate voltage to each gate terminal of the plurality of semiconductor switches;
the current sensor sensing the current flowing in from the power system; and,
When an overcurrent detection signal indicating occurrence of overcurrent is received from the current sensor, controlling the plurality of gate drivers so that a limited gate voltage is applied to each gate terminal;
In a state in which the gate voltage is limited, when a fault current detection signal indicating generation of a fault current is received from the current sensor, a control unit for controlling the cut-off switch to insulate the semiconductor circuit breaker and the load from the power system. Characterized by a semiconductor circuit breaker. 12. The method of claim 11,
The limited gate voltage is
a voltage lower than the normal gate voltage output by the gate driver in a normal operating state,
The plurality of semiconductor switches,
The semiconductor circuit breaker according to claim 1, wherein the maximum amount of output current is limited as the gate voltage is limited. The method of claim 11, wherein the control unit,
In a state in which the gate voltage is limited, when a current restoration signal indicating that the magnitude of the current flowing from the power system is restored is received from the current sensor, controlling the plurality of gate drivers to restore the limited gate voltage semiconductor circuit breaker. The method of claim 13, wherein the control unit,
When the overcurrent detection signal is received, the gate voltage is maintained in a limited state until the fault current detection signal or the current restoration signal is received. In the control method of a semiconductor circuit breaker comprising the current sensor of claim 1,
electrically connecting a power system and a load by driving a blocking switch and gate drivers applying a gate voltage to a plurality of semiconductor switches provided in the semiconductor circuit breaker;
detecting, from the current sensor, whether an overcurrent detection signal indicating that an overcurrent flows from the power system is received;
controlling the gate drivers to apply a limited gate voltage when the overcurrent detection signal is received;
checking whether a fault current detection signal indicating generation of a fault current or a current recovery signal indicating that a current magnitude has been restored is received from the current sensor while controlling the gate drivers to apply the limited gate voltage; and,
As a result of the check, controlling the cut-off switch according to the signal received from the current sensor to insulate the semiconductor circuit breaker and the load from the power system, or to control the plurality of gate drivers to restore the limited gate voltage A method of controlling a semiconductor circuit breaker comprising the steps of. 16. The method of claim 15,
The limited gate voltage is
a voltage lower than the normal gate voltage output by the gate driver in a normal operating state,
The plurality of semiconductor switches,
The control method of a semiconductor circuit breaker, characterized in that the maximum amount of output current is limited as the gate voltage is limited.

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