KR20220134116A - Substrate processing apparatus - Google Patents

Abstract

Disclosed is a substrate processing device. The substrate processing device comprises: a process chamber for performing a processing process for a substrate; a substrate support part disposed in the process chamber and on which the substrate is placed; a microwave heater disposed on an upper part of the process chamber and providing microwaves onto the substrate to heat the substrate to a process temperature; a gas supply part that provides a process gas for processing the substrate inside the process chamber; and an upper part electrode disposed on the upper part of the process chamber to form the process gas into a plasma state. Therefore, the present invention enables a time to be greatly reduced.

Description

Substrate processing apparatus {SUBSTRATE PROCESSING APPARATUS}

Embodiments of the present invention relate to a substrate processing apparatus. More particularly, it relates to a substrate processing apparatus for performing a processing process on a substrate such as a silicon wafer in a semiconductor device manufacturing process.

Semiconductor devices can generally be formed on a silicon wafer used as a substrate by repeatedly performing a series of manufacturing processes, wherein the semiconductor devices are singulated through a dicing process, bonded on a printed circuit board, and then through a molding process. Packaging may be processed. For example, in order to manufacture the semiconductor devices, a deposition process for forming a thin film on the substrate, a photolithography process for forming a photoresist pattern on the thin film, and a thin film using the photoresist pattern An etching process for forming patterns having electrical characteristics, etc. may be repeatedly performed.

In the deposition process and the etching process, a process gas may be formed in a plasma state, and thin film formation and etching may be performed using the process gas formed in the plasma state. For example, a treatment process such as Plasma Enhanced Chemical Vapor Deposition (PECVD), Plasma Enhanced Atomic Layer Deposition (PEALD), or plasma etching may be performed on the substrate.

The plasma treatment process as described above is a process gas formed in a plasma state by a capacitively coupled plasma (CCP) source, an inductively coupled plasma (ICP) source, a microwave plasma source, etc. A deposition or etching process may be performed using the .

On the other hand, in the processing process as described above, the substrate may be heated to a preset temperature, and for this purpose, a substrate support part having a built-in heater for heating the substrate may be disposed in a process chamber for performing the processing process. . However, it takes a considerable amount of time to heat the substrate to a preset process temperature before performing the treatment process, and accordingly, it is necessary to shorten the time required for heating the substrate in order to improve the productivity of the semiconductor device.

Republic of Korea Patent Publication No. 10-2018-0069705 (published on June 25, 2018) Republic of Korea Patent Publication No. 10-2020-0114826 (published on 10/07/2020)

SUMMARY OF THE INVENTION An object of the present invention is to provide a substrate processing apparatus capable of reducing a time required for heating a substrate in a processing process for the substrate.

A substrate processing apparatus according to an aspect of the present invention for achieving the above object includes a process chamber for performing a processing process on a substrate, a substrate support part disposed in the process chamber and on which the substrate is placed, and the process chamber a microwave heater disposed on the upper portion and providing microwaves onto the substrate to heat the substrate to a process temperature; a gas supply unit providing a process gas for processing the substrate in the process chamber; It is disposed on the upper portion and may include an upper electrode for forming the process gas into a plasma state.

According to some embodiments of the present disclosure, the microwave heater includes a microwave generating module for generating the microwave, and connecting the microwave generating module and an upper portion of the process chamber to transmit the microwave into the process chamber It may include a waveguide.

According to some embodiments of the present invention, a dielectric window for transmitting the microwave is disposed on the upper portion of the process chamber, and the upper electrode is attached on the lower surface of the dielectric window and is made of a transparent material that allows the microwave to pass through. can

According to some embodiments of the present invention, the upper electrode may be disposed on the upper portion of the process chamber and made of a transparent material to allow the microwave to pass therethrough.

According to some embodiments of the present invention, the upper electrode may include phosphorus-tin oxide.

According to some embodiments of the present invention, the microwave heater may provide the microwave in a pulsed manner.

According to some embodiments of the present disclosure, the substrate processing apparatus may further include a temperature measuring unit configured to measure the temperature of the substrate by irradiating measurement light onto the substrate and detecting reflected light reflected from the substrate. .

According to some embodiments of the present invention, the wavelength of the measurement light may be about 1100 nm to about 1600 nm.

According to some embodiments of the present disclosure, the substrate processing apparatus controls the operation of the microwave heater based on a measurement signal of the temperature measuring unit so that the substrate is heated to the process temperature after the substrate is placed on the substrate support unit It may further include a temperature control unit.

According to some embodiments of the present invention, the process gas is supplied into the process chamber after the substrate reaches the process temperature, and the processing process of the substrate is performed by the process gas formed in the plasma state. During the operation, the temperature controller may control the operation of the microwave heater so that the temperature of the substrate is maintained at the process temperature based on the measurement signal of the temperature measuring unit.

According to the embodiments of the present invention as described above, the temperature of the substrate, particularly the upper surface temperature of the substrate, may be rapidly increased to the process temperature by the microwave, thereby taking the time required to perform the processing process This can be greatly shortened. That is, since the temperature of the upper surface of the substrate can be rapidly increased compared to the prior art of heating the substrate by embedding a heater in the substrate support, the time required for the processing process can be greatly shortened, and the near-infrared measurement light Since the temperature of the upper surface of the substrate can be measured in a non-contact manner using

1 is a schematic configuration diagram for explaining a substrate processing apparatus according to an embodiment of the present invention.
FIG. 2 is a schematic diagram for explaining the temperature measuring unit shown in FIG. 1 .
FIG. 3 is a schematic diagram for explaining a method of performing a processing process on a substrate using the substrate processing apparatus illustrated in FIG. 1 .

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention should not be construed as being limited to the embodiments described below and may be embodied in various other forms. The following examples are provided to fully convey the scope of the present invention to those skilled in the art, rather than being provided so that the present invention can be fully completed.

In embodiments of the present invention, when an element is described as being disposed or connected to another element, the element may be directly disposed or connected to the other element, and other elements may be interposed therebetween. it might be Alternatively, when one element is described as being directly disposed on or connected to another element, there cannot be another element between them. Although the terms first, second, third, etc. may be used to describe various items such as various elements, compositions, regions, layers and/or portions, the items are not limited by these terms. will not

The terminology used in the embodiments of the present invention is only used for the purpose of describing specific embodiments, and is not intended to limit the present invention. In addition, unless otherwise limited, all terms including technical and scientific terms have the same meaning as understood by one of ordinary skill in the art of the present invention. The above terms, such as those defined in conventional dictionaries, shall be interpreted as having meanings consistent with their meanings in the context of the relevant art and description of the present invention, ideally or excessively outwardly intuitive, unless clearly defined. will not be interpreted.

Embodiments of the present invention are described with reference to schematic diagrams of ideal embodiments of the present invention. Accordingly, variations from the shapes of the diagrams, eg, variations in manufacturing methods and/or tolerances, are those that can be fully expected. Accordingly, the embodiments of the present invention are not to be described as being limited to the specific shapes of the areas described as diagrams, but rather to include deviations in the shapes, and the elements described in the drawings are entirely schematic and their shapes It is not intended to describe the precise shape of the elements, nor is it intended to limit the scope of the invention.

1 is a schematic configuration diagram for explaining a substrate processing apparatus according to an embodiment of the present invention.

Referring to FIG. 1 , a substrate processing apparatus 100 according to an embodiment of the present invention may be used to perform a processing process on a substrate 10 such as a silicon wafer in a semiconductor device manufacturing process. For example, the substrate processing apparatus may be used to perform a PECVD process or a PEALD process for forming a thin film on the substrate 10 , and as another example, etching the thin film formed on the substrate 10 . It may be used to perform a plasma etching process for

According to an embodiment of the present invention, the substrate processing apparatus 100 includes a process chamber 102 providing a space for performing the processing process, and the substrate 10 disposed inside the process chamber 102 . It may include a substrate support unit 110 on which the substrate is placed, and a gas supply unit 120 that provides a process gas for processing the substrate 10 in the process chamber 102 . In particular, the substrate processing apparatus 100 may include a microwave heater 130 that provides microwaves to the substrate 10 to heat the substrate 10 to a preset process temperature.

Specifically, a waveguide 132 for transmitting the microwave may be connected to an upper portion of the process chamber 102 , and the waveguide 132 may be connected to a microwave generating module 134 for generating the microwave. In particular, a dielectric window 136 for transmitting the microwaves may be disposed above the process chamber 102 , and the microwaves may be provided onto the substrate 10 through the dielectric window 136 . . As an example, a dielectric window 136 made of quartz may be disposed above the process chamber 102 .

The gas supply unit 120 is connected to gas sources 122 for providing the process gas, for example, a source gas and a reaction gas, and the gas sources 122 and is inside the process chamber 102 . The furnace may include a plurality of gas nozzles 124 for supplying the process gas. On/off valves 126 and flow rate controllers 128 may be installed in supply pipes connecting between the gas sources 122 and the gas nozzles 124 .

According to an embodiment of the present invention, the substrate processing apparatus 100 includes an upper electrode 140 for forming the process gas supplied into the process chamber 102 into a plasma state 20 (refer to FIG. 2 ). may include A high frequency power source 142 for forming the process gas into a plasma state 20 may be connected to the upper electrode 140 through a matching unit 144 . As an example, a high frequency power source for plasma formation 142 having a frequency of about 60 MHz may be connected to the upper electrode 140 through a matching unit 144 . In addition, the high frequency power supply 112 for applying a bias may be applied to the substrate support 110 through the matching unit 114 . As an example, a high frequency power source 112 for applying a bias having a frequency of about 13.56 MHz may be connected to the substrate support 110 through a matching unit 114 .

In particular, the upper electrode 140 may be attached to the lower surface of the dielectric window 136 and may be made of a transparent material capable of transmitting the microwave. For example, the upper electrode 140 may be made of indium tin oxide (ITO). As an example, the dielectric window 136 may have a flat plate shape to form an upper portion of the process chamber 102 , and the upper electrode 140 may be attached to a lower portion of the dielectric window 136 . As another example, although not shown, the upper electrode 140 may be formed in a flat plate shape having a sufficient thickness to constitute an upper portion of the process chamber 102 and disposed on the process chamber 102 . In this case, the dielectric window 136 may be omitted.

On the other hand, a gate valve 104 for loading and unloading the substrate 10 may be provided at one side of the process chamber 102 , and although not shown, the substrate support unit 110 is provided with an external transfer mechanism. Lift pins and lift pins for loading the substrate 10 loaded into the process chamber 102 by the substrate support unit 110 and unloading the substrate 10 from the substrate support unit 110 . A drive mechanism for driving may be provided. In addition, the process chamber 102 may include an exhaust port for discharging the process gas and reaction by-products generated by the treatment process, and the exhaust port is provided through the exhaust pipe 150 in which the pressure control valve 152 is installed. It may be connected to the vacuum pump 154 .

According to an embodiment of the present invention, the substrate processing apparatus 100 measures the temperature of the substrate 10 by irradiating measurement light onto the substrate 10 and detecting reflected light reflected from the substrate 10 . It may include a temperature measuring unit 160 for The temperature measuring unit 160 is mounted on one side of the waveguide 132 and includes a light irradiator 162 for irradiating the measurement light to the inside of the waveguide 132 , and the measurement light is directed toward the substrate 10 . It may include a prism 164 for changing the path of the measurement light so as to change the path of the measurement light, and a focus lens 166 for focusing the measurement light on the upper surface of the substrate 10 . In this case, the focus lens 166 and the prism 164 may be disposed on the dielectric window 136 , and a transparent window 168 for passing the measurement light is provided at one side of the waveguide 132 . can be installed. As an example, a transparent window 168 made of quartz may be installed on one side of the waveguide 132 .

FIG. 2 is a schematic diagram for explaining the temperature measuring unit shown in FIG. 1 .

Referring to FIG. 2 , the temperature measuring unit 160 includes a light source 170 and a light circulator 172 for providing the measurement light, a light receiving unit 174 for detecting the reflected light, and the light receiving unit 174 . It may include an analog/digital converter 176 for converting a signal, and a calculator 178 for calculating the temperature of the substrate 10 by analyzing the digital signal converted by the analog/digital converter 176 . may include.

The light source 170 may provide near-infrared light of about 1100 nm to about 1600 nm, and as an example, a Super Luminescent Diode (SLD) may be used as a lighting lamp. The measurement light irradiated from the light source 170 may be emitted to the light irradiator 162 through the optical circulator 172, and the light irradiator 162 forms the measurement light as parallel light to form the prism ( 164) can be used. As an example, the light irradiator 162 may include a collimator lens.

The measurement light whose path is changed by the prism 164 may be irradiated onto the substrate 10 through the focus lens 166 , the dielectric window 136 , and the upper electrode 140 . The reflected light reflected from the substrate 10 may be guided to the optical circulator 172 in a reverse order with respect to the path of the measurement light, and may be provided to the light receiving unit 174 by the optical circulator 172 . . The light receiving unit 174 may detect the reflected light and output analog signals according to light intensity for each wavelength. As an example, a spectrometer may be used as the light receiving unit 174 , and digital signals converted by the analog/digital converter 176 may be provided to the calculating unit 178 . The light receiving unit 174 and the analog/digital converter 176 may provide the spectrum of the reflected light, and the calculating unit 178 is configured to calculate the temperature of the substrate 10 based on the reflected light spectrum, particularly the upper portion of the substrate 10 . The surface temperature can be calculated.

According to an embodiment of the present invention, the substrate processing apparatus 100 measures the temperature so that the substrate 10 is heated to the preset process temperature after the substrate 10 is placed on the substrate support 110 . It may include a temperature controller 180 that controls the operation of the microwave heater 130 based on the measurement signal of the unit 160 .

Hereinafter, a substrate processing method using the substrate processing apparatus 100 according to an embodiment of the present invention will be described with reference to the accompanying drawings.

First, referring to FIG. 1 , after the substrate 10 is placed on the substrate support 110 by the external transfer mechanism, the inside of the process chamber 102 is preset by the vacuum pump 154 . It may be formed in a vacuum state. In addition, the microwave heater 130 may provide microwaves onto the substrate 10 so that the temperature of the substrate 10 , particularly the upper surface temperature of the substrate 10 , reaches a preset process temperature. In this case, the microwave heater 130 may provide the microwave in a pulsed manner in order to shorten the temperature rise time of the substrate 10 .

The temperature of the substrate 10 may be measured by the temperature measuring unit 160 , and the temperature controlling unit 180 is the microwave heater 130 based on the temperature signal measured by the temperature measuring unit 160 . ) can be controlled.

FIG. 3 is a schematic diagram for explaining a method of performing a processing process on a substrate using the substrate processing apparatus illustrated in FIG. 1 .

After the temperature of the substrate 10 reaches the preset process temperature, a process gas is provided between the upper electrode 140 and the substrate 10 from the gas supply unit 120 as shown in FIG. 3 . can The process gas may be formed in the plasma state 20 by the high frequency power for plasma formation applied to the upper electrode 140 and the high frequency power for bias application applied to the substrate support 110, and the plasma state ( 20), a processing process for the substrate 10 may be performed by the process gas formed therein.

In particular, while the processing process is performed, the temperature of the substrate 10 may be measured by the temperature measuring unit 160 , and the temperature controlling unit 180 is based on the measurement signal of the temperature measuring unit 160 . Thus, the operation of the microwave heater 130 may be controlled so that the temperature of the substrate 10 is constantly maintained at the process temperature.

According to the embodiments of the present invention as described above, the temperature of the substrate 10 , particularly the upper surface temperature of the substrate 10 , may be rapidly increased to the process temperature by the microwave, whereby the processing process The time required to perform this can be greatly reduced. That is, since the temperature of the upper surface of the substrate 10 can be rapidly increased compared to the prior art of heating the substrate by embedding a heater in the substrate support, the time required for the processing process can be greatly reduced, and the Since the temperature of the upper surface of the substrate 10 may be measured in a non-contact manner using the near-infrared measurement light, the temperature of the upper surface of the substrate 10 may be constantly maintained during the processing process.

Although the above has been described with reference to the preferred embodiments of the present invention, those skilled in the art can variously modify and change the present invention without departing from the spirit and scope of the present invention as set forth in the following claims. You will understand that there is

10: substrate 100: substrate processing apparatus
102: process chamber 104: gate valve
110: substrate support 112: high frequency power supply for bias application
114: matching unit 120: gas providing unit
122: gas source 124: gas nozzle
126: on/off valve 128: flow controller
130: microwave heater 132: waveguide
134 microwave generation module 136 dielectric window
140: upper electrode 142: high-frequency power source for plasma formation
144: matching unit 150: exhaust pipe
152: pressure regulating valve 154: vacuum pump
160: temperature measuring unit 162: light irradiator
164: prism 166: focus lens
170: light source 172: optical circulator
174: light receiver 176: analog/digital converter
178: calculation unit 180: temperature control unit

Claims (10)

a process chamber for performing a processing process on the substrate;
a substrate support disposed in the process chamber and on which the substrate is placed;
a microwave heater disposed above the process chamber and configured to provide microwaves onto the substrate to heat the substrate to a process temperature;
a gas providing unit providing a process gas for processing the substrate into the process chamber; and
and an upper electrode disposed above the process chamber and configured to form the process gas in a plasma state. According to claim 1, wherein the microwave heater,
a microwave generating module for generating the microwave;
and a waveguide connecting the microwave generating module and an upper portion of the process chamber and transmitting the microwave into the process chamber. The method of claim 2, wherein a dielectric window for transmitting the microwave is disposed on the upper portion of the process chamber,
and the upper electrode is attached to a lower surface of the dielectric window and is made of a transparent material capable of transmitting the microwave. The apparatus of claim 2 , wherein the upper electrode is disposed above the process chamber and made of a transparent material to allow the microwave to pass therethrough. 5. The apparatus of claim 3 or 4, wherein the upper electrode comprises phosphorus-tin oxide. The substrate processing apparatus of claim 1 , wherein the microwave heater provides the microwave in a pulsed manner. The substrate processing apparatus of claim 1 , further comprising: a temperature measuring unit configured to measure a temperature of the substrate by irradiating measurement light onto the substrate and detecting reflected light reflected from the substrate. The substrate processing apparatus of claim 7 , wherein a wavelength of the measurement light ranges from 1100 nm to 1600 nm. 8. The method of claim 7, further comprising: a temperature controller configured to control an operation of the microwave heater based on a signal measured by the temperature measuring unit so that the substrate is heated to the process temperature after the substrate is placed on the substrate support. substrate processing equipment. 10. The method of claim 9, wherein the process gas is supplied into the process chamber after the substrate reaches the process temperature,
While the processing process of the substrate is performed by the process gas formed in the plasma state, the temperature controller controls the operation of the microwave heater so that the temperature of the substrate is maintained at the process temperature based on the measurement signal of the temperature measuring part. A substrate processing apparatus, characterized in that.

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