KR20220107626A - OLED display device and method for manufacturing the same - Google Patents

Abstract

According to an aspect of the present invention, provided is a method for manufacturing an OLED display device comprising: a substrate loading step of loading a substrate on which a thin film transistor and each anode electrode corresponding to R, G, and B sub-pixels to be formed are formed; a sub pixel forming step of aligning a fine mask for a sub-pixel on which a pattern corresponding to one sub-pixel among the R, G, and B sub-pixels is formed and the substrate, and sequentially depositing a hole organic layer through which holes move, a light emitting layer, and an electron organic layer through which electrons move in a corresponding sub-pixel area; and a step of forming a cathode electrode layer on the substrate. In the sub pixel forming step, two layers selected from the hole organic layer, the light emitting layer, and the electron organic layer, and the remaining layer are deposited by using the fine mask for different sub-pixels. The present invention can minimize damage of the substrate.

Description

OLED display device and method for manufacturing the OLED display device

The present invention relates to an OLED display device and a method for manufacturing an OLED display device. More specifically, it is to provide an OLED display device and a method of manufacturing an OLED display device capable of minimizing damage to a substrate due to frequent replacement of a mask by forming a common layer together using a fine mask corresponding to a sub-pixel.

Organic Luminescence Emitting Device (OLED) is a self-luminous device that emits light by itself using the electroluminescence phenomenon that emits light when a current flows through a fluorescent organic compound. Therefore, a lightweight and thin flat panel display device can be manufactured.

A flat panel display using such an organic electroluminescent device has a fast response speed and a wide viewing angle, and thus is emerging as a next-generation display device.

In the organic electroluminescent device, the remaining organic material layers excluding the anode electrode and the cathode electrode, such as a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer, are made of an organic thin film, and such an organic thin film is formed on a substrate by a vacuum thermal deposition method. will be deposited on

The vacuum thermal deposition method consists of placing a substrate in a vacuum chamber, aligning a mask on which a predetermined pattern is formed on the substrate, and then heating the crucible of the evaporation source to deposit the deposited particles evaporated from the crucible on the substrate. .

The common layers, such as the hole injection layer and the hole common layer of the hole transport layer, and the electron common layer such as the electron transport layer and the electron injection layer, are deposited using an open metal mask (OMM). In the light emitting layer, organic material is deposited using a fine metal mask (FMM) for each R, G, and B sub-pixel. There is a possibility that defective pixels may be generated.

Republic of Korea Patent Publication No. 10-2067968 (Announcement on 2020.01.20)

An object of the present invention is to provide an OLED display device and a method for manufacturing an OLED display device that can minimize damage to a substrate due to frequent mask replacement by forming a common layer together using a fine mask corresponding to a sub-pixel.

According to one aspect of the present invention, a substrate loading step of loading a thin film transistor and a substrate on which anode electrodes corresponding to R, G, and B sub-pixels to be formed are formed; A fine mask for a sub-pixel having a pattern corresponding to any one of the R, G, and B sub-pixels is aligned with the substrate, and a hole organic layer and a light emitting layer in which holes move in the sub-pixel region and a sub-pixel forming step of sequentially depositing an electron organic layer through which electrons move; and forming a cathode electrode layer on the substrate, wherein the sub-pixel forming step includes depositing two layers selected from among the hole organic layer, the light emitting layer, and the electron organic layer and the remaining layers using different fine masks for sub-pixels. A method for manufacturing an OLED display device is provided.

An auxiliary electrode is formed between the anode electrodes on the substrate, and in this case, as the cathode electrode layer is formed in the step of forming the cathode electrode layer, the auxiliary electrode and the cathode electrode layer may be connected.

The anode electrode layer may be a transparent conductive indium tin oxide (ITO) transparent electrode, and the cathode electrode layer may be a thin metal electrode or a conductive oxide film.

The substrate may include: an auxiliary electrode formed between the anode electrodes; A bank may be further included at both ends of the auxiliary electrode to cover an edge of the anode electrode and an edge of the auxiliary electrode.

Each of the R, G, and B sub-pixels may be formed on the anode electrode between the banks.

According to another aspect of the present invention, there is provided a substrate comprising: a substrate on which an anode electrode layer including a thin film transistor and an anode electrode corresponding to each of the R, G, and B sub-pixels is formed; an R sub-pixel including a hole organic layer, an R emission layer, and an electron organic layer sequentially stacked on an anode electrode corresponding to the R sub-pixel; a G sub-pixel spaced apart from the R sub-pixel and including a hole organic layer, a G emission layer, and an electron organic layer sequentially stacked on an anode electrode corresponding to the G sub-pixel; a B sub-pixel spaced apart from the R sub-pixel and the G sub-pixel and including a hole organic layer, a B emission layer, and an electron organic layer sequentially stacked on an anode electrode corresponding to the B sub-pixel; a cathode electrode layer formed on the R sub-pixel, the G sub-pixel, and the B sub-pixel; An OLED display device is provided, wherein the layer and the remaining layers are deposited using fine masks for different sub-pixels.

An auxiliary electrode is formed between the anode electrodes on the substrate, and in this case, as the cathode electrode layer is formed, the auxiliary electrode and the cathode electrode layer between the R sub-pixel, the G sub-pixel, and the B sub-pixel can be connected

The anode electrode layer may be a transparent conductive indium tin oxide (ITO) transparent electrode, and the cathode electrode layer may be a thin metal electrode or a conductive oxide film.

The substrate may include: an auxiliary electrode formed between the anode electrodes; A bank may be further included at both ends of the auxiliary electrode to cover an edge of the anode electrode and an edge of the auxiliary electrode.

Each of the R sub-pixel, the G sub-pixel, and the B sub-pixel may be formed on the anode electrode between the banks.

According to an embodiment of the present invention, damage to the substrate due to frequent replacement of the mask can be minimized by forming the common layer together using the fine mask corresponding to the sub-pixel.

In addition, by depositing a common layer providing holes or electrons as the light emitting layer to be separated from each other for each sub-pixel, it is possible to prevent the omission of the etching process of the common layer and the propagation of pixel defects due to defects in the cathode layer.

1 is a flowchart of a method of manufacturing an OLED display device according to an embodiment of the present invention.
2 to 6 are flowcharts of a method of manufacturing an OLED display device according to an embodiment of the present invention.
7 to 9 are views for explaining a deposition process of an OLED display device manufacturing method according to an embodiment of the present invention.
10 and 11 are flowcharts of a method of manufacturing an OLED display device according to another embodiment of the present invention.
12 is a diagram schematically illustrating an OLED display device according to another embodiment of the present invention.

Since the present invention can apply various transformations and can have various embodiments, specific embodiments are illustrated in the drawings and described in detail in the detailed description. However, this is not intended to limit the present invention to specific embodiments, and should be understood to include all modifications, equivalents, and substitutes included in the spirit and scope of the present invention. In describing the present invention, if it is determined that a detailed description of a related known technology may obscure the gist of the present invention, the detailed description thereof will be omitted.

Terms such as first, second, etc. may be used to describe various elements, but the elements should not be limited by the terms. The above terms are used only for the purpose of distinguishing one component from another.

Hereinafter, an embodiment of an OLED display device and a method of manufacturing an OLED display device according to the present invention will be described in detail with reference to the accompanying drawings. and a redundant description thereof will be omitted.

1 is a flowchart of a method of manufacturing an OLED display device according to an embodiment of the present invention. And, FIGS. 2 to 6 are flowcharts of a method for manufacturing an OLED display device according to an embodiment of the present invention, and FIGS. 7 to 9 are for explaining a deposition process of the method for manufacturing an OLED display device according to an embodiment of the present invention. is a drawing for

2 to 9, the glass substrate 22, the thin film transistor 14, the planarization layer 16, the anode electrode 18, the anode electrode layer 19, the auxiliary electrode 20, the bank 21, the substrate ( 22), hole injection layer 24, hole transport layer 25, hole organic layer 26, R emission layer 28, electron transport layer 30, electron injection layer 31, electron organic layer 32, R sub-pixel (33), G emitting layer 34, G sub-pixel 35, B emitting layer 36, B sub-pixel 37, cathode electrode layer 38, fine mask for R sub-pixel 40, for G sub-pixel A fine mask 42, a fine mask 44 for the B sub-pixel is shown.

In the OLED display device manufacturing method according to the present embodiment, the thin film transistor 14 and the substrate 22 on which the anode electrode 18 corresponding to the R, G, and B sub-pixels 33, 35 and 37 to be formed are formed, respectively. a substrate loading step of loading Fine masks 40, 42, 44 for sub-pixels in which a pattern corresponding to any one of the R, G, and B sub-pixels 33, 35, and 37 is formed and the substrate 22 are aligned and sequentially depositing a hole organic layer 26 in which holes move, light emitting layers 28, 34, 36 and an electron organic layer 32 in which electrons move in the sub-pixel region; and forming a cathode electrode layer 38 on the substrate 22, wherein the sub-pixel forming step includes two layers selected from the hole organic layer 26, the light emitting layers 28, 34, 36, and the electron organic layer 32; The remaining layers may be deposited using different fine masks for sub-pixels.

The present invention relates to a method of depositing each sub-pixel so that each sub-pixel is separated from each other by sequentially depositing a common layer and a light emitting layer for one sub-pixel using a fine mask for a sub-pixel having a pattern corresponding to the sub-pixel formed therein. When sequentially depositing a common layer and a light emitting layer for a pixel, a fine mask for one sub-pixel is not used, but two selected from the hole organic layer, the light emitting layer, and the electron organic layer and the remaining layers are different fine masks for sub-pixels are used. Thus, it is possible to perform maintenance on reduction of contamination of the mask by depositing.

In this embodiment, referring to FIGS. 3 and 4 , the hole organic layer 26 and the light emitting layer 28 are selected from among the hole organic layer 26 , the light emitting layer 28 and the electron organic layer 32 , and these are combined into one sub-pixel. It is sequentially deposited using the fine mask 40 for use, and the remaining electron organic layer 32 is deposited on the light emitting layer 28 using the fine mask 40 for other sub-pixels.

On the other hand, FIGS. 10 and 11 are different embodiments, and the light emitting layer 28 and the electron organic layer 32 are selected among the hole organic layer 26, the light emitting layer 28, and the electron organic layer 32, but first, in FIG. As shown, after deposition on the substrate 22 using a fine mask 40 for one sub-pixel with respect to the hole organic layer 26 to be deposited, as shown in FIG. 11 , the light emitting layer 28 and The light emitting layer 28 and the electron organic layer 32 are sequentially deposited with respect to the electron organic layer 32 using a fine mask 40 for a different sub-pixel.

Hereinafter, a method of manufacturing an OLED display device according to the present embodiment will be described in detail with reference to FIGS. 2 to 8 .

First, as shown in FIG. 2 , a substrate 22 on which a thin film transistor 14 and an anode electrode 18 corresponding to the R, G, and B subpixels 33 , 35 and 37 to be formed is formed is prepared. do (S100). The prepared substrate 22 may be loaded into a deposition chamber for deposition.

As shown in FIG. 2 , the 'substrate 22' according to the present embodiment is a substrate prepared immediately before deposition on the R, G, and B sub-pixels 33, 35, and 37 is performed, and is a glass substrate. The thin film transistor 14 (thin film transistor), the planarization layer 16 , the anode electrode 18 electrically connected to the thin film transistor 14 , and the like are formed on the substrate 12 .

The anode electrode 18 may correspond to the R, G, and B sub-pixels 33, 35, and 37, respectively, and may be formed for each sub-pixel. Hereinafter, the layer in which the anode electrode 18 is formed for each sub-pixel is referred to as an anode electrode layer 19 .

In the OLED display, by applying a voltage between the anode electrode layer 19 and the cathode electrode layer 38, a difference in energy is formed in each sub-pixel (33, 35, 37) and self-luminescence. ) recombine and the remaining energy is generated as light. In this case, the wavelength of the emitted light can be adjusted according to the amount of the dopant of the organic material, and full color can be realized.

In this embodiment, a form formed by depositing a transparent conductive oxide film (Indium Tin Oxide: ITO) as the anode electrode layer 19 on the substrate 22 by a sputtering method is presented.

In this step, the substrate 22 on which the thin film transistor 14 , the anode electrode 18 , etc. are formed is prepared for deposition of an organic material.

On the other hand, the substrate 22, the auxiliary electrode 20 formed between the anode electrode 18; A bank 21 (bank) covering the edge of the anode electrode 18 and the edge of the auxiliary electrode 20 may be included at both ends of the auxiliary electrode 20 . When the bank 21 is formed on the substrate 22 , each of the sub-pixels 33 , 35 , and 37 may be formed on the anode electrode 18 between the banks 21 .

In order for the OLED display device to realize full color, the R sub-pixel 33 and G sub-pixel ( 35), the unit pixels composed of three sub-pixels of the B sub-pixel 37 are arranged at regular intervals. Each sub-pixel includes an organic material layer formed by sequentially depositing the hole injection layer 24, the hole transport layer 25, the corresponding emission layers 28, 34, 36, the electron transport layer 30, and the electron injection layer 31. do.

Next, the fine mask 40 for the R sub-pixel on which a pattern corresponding to the R sub-pixel 33 is formed and the substrate 22 are aligned, and as shown in FIG. 3, holes are moved to the R sub-pixel region. A hole organic layer 26 and an R emission layer 28 are sequentially deposited (S200). After the hole organic layer 26 and the R emission layer 28 are deposited, the fine mask 40 for the R sub-pixel used first is separated.

Next, in order to perform deposition on the remaining electron organic layer 32, a fine mask 40 for R sub-pixels different from the previous step is aligned to the substrate 22, and as shown in FIG. 4, the R sub-pixel An electron organic layer 32 through which electrons move is deposited on the R emission layer 28 in the pixel region (S300).

In general, the hole organic layer 26 in which holes move and the electron organic layer 32 in which electrons move are deposited on a substrate using an open mask with an open front surface, and the R emission layer, the G emission layer, The light emitting layer B is formed by depositing each sub-pixel in an independent chamber using a fine mask.

However, in the present embodiment, the hole organic layer and the sub-pixel emission layer are sequentially stacked using only the fine mask for sub-pixels having the pattern corresponding to one sub-pixel, and again using the fine mask for other sub-pixels having the same shape. The remaining electron organic layer is deposited to form the corresponding sub-pixel.

As in the present embodiment, when forming one sub-pixel, by using different fine masks for sub-pixels, it is possible to reduce a mask replacement cycle and reduce contamination of the mask due to frequent deposition.

In more detail, as shown in FIG. 7(b), a fine mask 40 for R sub-pixels having a pattern corresponding to the R sub-pixels 33 is aligned on the substrate 22, and in FIG. As shown, after sequentially depositing a hole organic layer 26 and an R light-emitting layer 28 through which holes move, a fine mask 40 for another R sub-pixel is aligned on the substrate 22, as shown in FIG. As shown, an R sub-pixel 33 is formed by depositing an electron organic layer 32 over the R emission layer 28 .

The hole organic layer 26 is an organic material layer for injecting holes into the light emitting layer, and may be composed of a hole injection layer 24 (Hole Injection Layer, HIL), a hole transport layer 25 (Hole Transport Layer, HTL), and an electron organic layer ( 32) is an organic material layer that generates and injects electrons into the emission layer, and may include an electron transport layer 30 (Electron Transfer Layer, ETL) and an electron injection layer 31 (Electron Injection Layer, EIL).

According to this embodiment, as shown in FIG. 3 , a hole injection layer 24 and a hole transport layer 25 are sequentially deposited on the corresponding anode electrode 18 using the fine mask 40 for the R sub-pixel. Thus, the hole organic layer 26 is deposited, and the R emission layer 28 is deposited directly thereon using the fine mask 40 for the R sub-pixel as it is. Then, by aligning the fine mask 40 for another R sub-pixel to the substrate 22, and depositing the electron transport layer 30 and the electron organic layer 32 of the electron injection layer 31 directly on the R light emitting layer 28, The substrate 22 on which the R sub-pixels 33 shown in (c) of 7 are formed can be obtained.

Next, as shown in FIG. 5 , the G sub-pixel 35 is formed in the same manner as the R sub-pixel formation method described above.

As shown in (a) of FIG. 8 , a fine mask 42 for the G sub-pixel, on which a pattern corresponding to the G sub-pixel is formed, is aligned with the substrate 22 on which the R sub-pixel 33 is formed. 5, after sequentially depositing the hole injection layer 24, the hole organic layer 26 of the hole transport layer 25, and the G emission layer 34 on the anode 18, the FIG. 8 by aligning another fine mask 42 for G sub-pixels on the substrate 22 and depositing an electron transport layer 30 and an electron organic layer 32 of the electron injection layer 31 on the G emission layer 34 The substrate 22 on which the R sub-pixels 33 and G sub-pixels 35 shown in (b) are formed can be obtained.

Next, as shown in FIG. 5 , a B sub-pixel 37 is formed in the same manner as the R sub-pixel and G sub-pixel formation method described above.

As shown in (a) of FIG. 9 , a fine mask 44 (fine mask) for the B sub-pixel in which a pattern corresponding to the B sub-pixel 37 is formed is applied to the R sub-pixel 33 and the G sub-pixel 35 . ) is aligned with the formed substrate 22, and, as shown in FIG. 5, on the corresponding anode electrode 18, the hole organic layer 26 of the hole injection layer 24, the hole transport layer 25, and the B light emitting layer ( After sequentially depositing 36), another fine mask 44 for sub-pixel B is aligned on the substrate 22, and an electron transport layer 30 and an electron injection layer 31 are directly on the B light-emitting layer 36. By sequentially depositing an electron organic layer 32 of can

Next, as shown in FIG. 6 , a cathode electrode layer 38 is formed on the substrate 22 ( S400 ). Referring to FIG. 6 , a cathode electrode layer 38 is formed on the substrate 22 on which the R sub-pixel 33 , the G sub-pixel 35 , and the B sub-pixel 37 are formed on the corresponding anode electrode 18 . do.

In contrast to the form formed as a transparent electrode by depositing a transparent conductive oxide film (Indium Tin Oxide: ITO) as the anode electrode layer 19, in this embodiment, a thin metal electrode is deposited on the organic material layer as the cathode electrode layer 38. present one form. A transparent cathode electrode can be formed by depositing a thin metal electrode, and it can be formed as a thin film of about 200 Å in order to transmit light generated from the organic material layer by forming it with Mg, Ag, Ca, Mg:Ag, Al:Li, etc. Of course, it is also possible to form the cathode electrode layer 38 as a conductive oxide film.

When the cathode electrode layer 38 is formed as a very thin thin film for transparency, there is a problem in that the luminance becomes non-uniform due to difficulty in hole formation due to high sheet resistance. To this end, by providing the auxiliary electrode 20 in each sub-pixel and connecting it to the cathode electrode layer 38, the sheet resistance of the cathode electrode can be supplemented to solve this problem.

In the conventional case, since the hole organic layer 26 and the electron organic layer 32 are deposited on the entire surface of the substrate 22 by an open mask, the upper portion of the auxiliary electrode 20 is formed to connect the auxiliary electrode 20 and the cascade electrode. The auxiliary electrode 20 and the cathode electrode were connected by removing the organic material layer or providing a separate barrier rib.

However, in the present embodiment, since the R sub-pixel 33 , the G sub-pixel 35 , and the B sub-pixel 37 are separated and deposited separately, the cathode electrode is assisted by the deposition of the cathode electrode layer 38 . It may be directly connected to the electrode 20 .

Since the OLED display device formed by the above method is separated for each sub-pixel, it is possible to prevent the propagation of defects to neighboring pixels due to a cathode electrode defect or a unit pixel defect.

10 and 11 are flowcharts of a method of manufacturing an OLED display device according to another embodiment of the present invention.

10 and 11, the glass substrate 12, the thin film transistor 14, the planarization layer 16, the anode electrode 18, the anode electrode layer 19, the auxiliary electrode 20, the bank 21, hole injection Layer 24 , hole transport layer 25 , hole organic layer 26 , R emissive layer 28 , electron transport layer 30 , electron injection layer 31 , electron organic layer 32 , R subpixel 33 are shown. has been

3 and 4, the hole organic layer 26 and the light emitting layers 28, 34, 36) is selected and these are sequentially deposited using a fine mask for one sub-pixel, and the remaining electron organic layer 32 is deposited on the emission layer using a fine mask for another sub-pixel.

On the other hand, in this embodiment, the emission layers 28 , 34 , 36 and the electron organic layer 32 are selected among the hole organic layer 26 , the emission layers 28 , 34 , 36 , and the electron organic layer 32 , but first the remaining hole organic layer After depositing 26 on the substrate 22 using a fine mask for one sub-pixel, the light-emitting layers 28 , 34 , 36 and the electronic organic layer 32 are sequentially formed thereon using a fine mask for another sub-pixel. It is a form of vapor deposition.

For example, as shown in FIG. 10 , a fine mask 40 for R sub-pixels having a pattern corresponding to the R sub-pixels 33 formed on the substrate 22 and the substrate 22 are aligned, and R After depositing the hole injection layer 24 and the hole organic layer 26 of the hole transport layer 25 in the sub-pixel region, as shown in FIG. 11 , an R emission layer is used using a fine mask 40 for another R sub-pixel. 28 , the electron transport layer 30 , and the electron organic layer 32 of the electron injection layer 31 are sequentially deposited to form the R subpixel 33 . In the same manner as described above, the G sub-pixel 35 and the B sub-pixel 37 may be formed.

12 is a diagram schematically illustrating an OLED display device according to another embodiment of the present invention.

In FIG. 12 , a substrate 22 , a thin film transistor 14 , a planarization layer 16 , an anode electrode layer 19 , an auxiliary electrode 20 , a bank 21 , an R sub-pixel 33 , and a G sub-pixel 35 . ), the B sub-pixel 37 , and the cathode electrode layer 38 are shown.

The OLED display device according to the present embodiment includes a substrate 22 on which an anode electrode layer 19 including a thin film transistor 14 and an anode electrode corresponding to the R, G, and B sub-pixels 33, 35, and 37, respectively, is formed. class; an R sub-pixel 33 including a hole organic layer, an R emission layer, and an electron organic layer sequentially stacked on an anode electrode corresponding to the R sub-pixel 33; a G sub-pixel 35 spaced apart from the R sub-pixel 33 and including a hole organic layer, a G emission layer, and an electron organic layer sequentially stacked on an anode electrode corresponding to the G sub-pixel 35; The R sub-pixel 33 and the G sub-pixel 35 are spaced apart, and the B sub-pixel including a hole organic layer, a B emission layer, and an electron organic layer sequentially stacked on an anode electrode corresponding to the B sub-pixel 37 . pixel 37; and a cathode electrode layer 38 formed on the R sub-pixel 33 , the G sub-pixel 35 , and the B sub-pixel 37 .

At this time, the two layers selected from the hole organic layer, the light emitting layer, and the electron organic layer of any one or more of the R, G, and B sub-pixels and the remaining layers are deposited using different fine masks for the sub-pixels.

As shown in FIG. 2 , the 'substrate 22' according to the present embodiment is a substrate prepared immediately before deposition on the R, G, and B sub-pixels 33, 35, and 37 is performed, and is a glass substrate. The thin film transistor 14 (thin film transistor), the planarization layer 16 , and an anode electrode electrically connected to the thin film transistor 14 may be formed on the substrate 12 .

As the anode electrode layer 19, a transparent conductive oxide film (Indium Tin Oxide: ITO) may be deposited on the substrate 22 by sputtering to form a transparent electrode.

The R sub-pixel 33 includes a hole organic layer in which holes move, an R emission layer, and an electron organic layer in which electrons move, which are sequentially stacked on the anode electrode corresponding to the R sub-pixel 33 .

In addition, the G sub-pixel 35 is spaced apart from the R sub-pixel 33 and sequentially stacked on the anode electrode corresponding to the G sub-pixel 35, a hole organic layer in which holes move, a G emission layer, and an electron It contains an organic layer of moving electrons.

In addition, the B sub-pixel 37 is spaced apart from the R sub-pixel 33 and the G sub-pixel 35 , and sequentially stacked on the anode electrode corresponding to the B sub-pixel 37 , through which holes move. It includes an organic layer, a B light emitting layer, and an electron organic layer through which electrons move.

The R sub-pixel 33 , the G sub-pixel 35 , and the B sub-pixel 37 are spaced apart from each other, and accordingly, the hole organic layer and the electron organic layer constituting each common layer are spaced apart from each other. This means that deposition is performed independently of each other for each sub-pixel.

At least one of the R sub-pixel 33 , the G sub-pixel 35 , and the B sub-pixel 37 has two layers selected from the hole organic layer, the light emitting layer, and the electron organic layer, and the remaining layers are different fine masks for sub-pixels. Deposition is performed using

For example, when forming the R sub-pixel 33 , first, a hole organic layer and an R emission layer are selected from among the hole organic layer, the R emission layer, and the electron organic layer, and these are sequentially deposited using a fine mask for one R sub-pixel. and the remaining electron organic layers are deposited on the emission layer using a fine mask for other R sub-pixels.

As another example, the R emission layer and the electron organic layer are selected from among the hole organic layer, the R emission layer, and the electron organic layer, and the remaining hole organic layer is deposited on a substrate using a fine mask for one R sub-pixel, and then on the other R sub-pixel fine It is a form in which an R emission layer and an electron organic layer are sequentially deposited using a mask.

Like the R sub-pixel 33, the G sub-pixel 35 and the B sub-pixel 37 also use two layers selected from among the hole organic layer, the light emitting layer, and the electron organic layer, and the remaining layers use different fine masks for sub-pixels. Thus, each sub-pixel can be formed separately from each other by depositing it.

The hole organic layer is an organic layer that injects holes into the light emitting layer, and may be composed of a hole injection layer (HIL) and a hole transport layer (HTL), and the electron organic layer is an organic layer that generates and injects electrons into the light emitting layer As such, it may be composed of an electron transfer layer (ETL) and an electron injection layer (EIL).

The cathode electrode layer 38 is formed on the R sub-pixel 33 , the G sub-pixel 35 , and the B sub-pixel 37 .

In contrast to the form formed as a transparent electrode by depositing a transparent conductive oxide film (Indium Tin Oxide: ITO) as the anode electrode layer 19, in this embodiment, a thin metal electrode is deposited on the organic material layer as the cathode electrode layer 38. present one form. A transparent cathode electrode can be formed by depositing a thin metal electrode, and it can be formed as a thin film of about 200 Å in order to transmit light generated from the organic material layer by forming it with Mg, Ag, Ca, Mg:Ag, Al:Li, etc. Of course, it is also possible to form the cathode electrode layer 38 as a conductive oxide film.

Meanwhile, the substrate 22 includes an auxiliary electrode 20 formed between the anode electrodes; A bank 21 (bank) covering the edge of the anode electrode and the edge of the auxiliary electrode 20 may be included at both ends of the auxiliary electrode 20 . When the banks 21 are formed on the substrate 22 , an organic material layer corresponding to each sub-pixel is formed on the anode electrode between the banks 21 .

In this embodiment, since the R sub-pixel 33, the G sub-pixel 35, and the B sub-pixel 37 are separated from each other, the cathode electrode is formed to prevent voltage drop by the deposition of the cathode electrode layer 38. It can be directly connected to the auxiliary electrode 20 to be used.

Since the OLED display device formed by the above method is separated for each sub-pixel, it is possible to prevent the propagation of defects to neighboring pixels due to a cathode electrode defect or a unit pixel defect.

Although the above has been described with reference to specific embodiments of the present invention, those of ordinary skill in the art may vary the present invention within the scope without departing from the spirit and scope of the present invention described in the claims below. It will be understood that modifications and changes can be made to

Many embodiments other than those described above are within the scope of the claims of the present invention.

12: glass substrate 14: thin film transistor
16: planarization layer 18: anode electrode
19: anode electrode layer 20: auxiliary electrode
22: substrate 24: hole injection layer
25: hole transport layer 26: hole organic layer
28: R emission layer 30: electron transport layer
31: electron injection layer 32: electron organic layer
33: R sub-pixel 34: G emitting layer
35: G sub-pixel 36: B light emitting layer
37: B sub-pixel 38: cathode electrode layer
39: fine mask for common layer 40: fine mask for R emission layer
42: fine mask for G light-emitting layer 44: fine mask for B light-emitting layer

Claims (10)

a substrate loading step of loading a thin film transistor and a substrate on which anode electrodes corresponding to R, G, and B sub-pixels to be formed are formed;
A fine mask for a sub-pixel having a pattern corresponding to any one of the R, G, and B sub-pixels is aligned with the substrate, and a hole organic layer and a light emitting layer in which holes move in the sub-pixel region and a sub-pixel forming step of sequentially depositing an electron organic layer through which electrons move;
Comprising the step of forming a cathode electrode layer on the substrate,
The sub-pixel forming step includes:
The method for manufacturing an OLED display device, characterized in that the two layers selected from the hole organic layer, the light emitting layer, and the electron organic layer and the remaining layers are deposited using different fine masks for sub-pixels.
According to claim 1,
An auxiliary electrode is formed on the substrate between the anode electrodes,
As the cathode electrode layer is formed in the step of forming the cathode electrode layer, the auxiliary electrode and the cathode electrode layer are connected to each other.
3. The method of claim 2,
The anode electrode layer is a transparent electrode of a transparent conductive oxide film (Indium Tin Oxide: ITO),
The cathode electrode layer is a thin metal electrode or a conductive oxide film, characterized in that, OLED display device manufacturing method.
The method of claim 1,
The substrate is
an auxiliary electrode formed between the anode electrodes;
The method of manufacturing an OLED display device, further comprising a bank (bank) covering an edge of the anode electrode and an edge of the auxiliary electrode at both ends of the auxiliary electrode.
5. The method of claim 4,
Each of the R, G, and B sub-pixels is formed in the anode electrode between the banks.
a substrate on which an anode electrode layer including a thin film transistor and an anode electrode corresponding to each of the R, G, and B sub-pixels is formed;
an R sub-pixel including a hole organic layer, an R emission layer, and an electron organic layer sequentially stacked on an anode electrode corresponding to the R sub-pixel;
a G sub-pixel spaced apart from the R sub-pixel and including a hole organic layer, a G emission layer, and an electron organic layer sequentially stacked on an anode electrode corresponding to the G sub-pixel;
a B sub-pixel spaced apart from the R sub-pixel and the G sub-pixel and including a hole organic layer, a B emission layer, and an electron organic layer sequentially stacked on an anode electrode corresponding to the B sub-pixel;
a cathode electrode layer formed on the R sub-pixel, the G sub-pixel, and the B sub-pixel;
OLED display, characterized in that the two layers selected from the hole organic layer, the light emitting layer, and the electron organic layer of any one or more of the R, G, and B sub-pixels and the remaining layers are deposited using different fine masks for the sub-pixels. device.
7. The method of claim 6,
An auxiliary electrode is formed on the substrate between the anode electrodes,
As the cathode electrode layer is formed, the auxiliary electrode between the R sub-pixel, the G sub-pixel, and the B sub-pixel is connected to the cathode electrode layer.
7. The method of claim 6,
The anode electrode layer is a transparent electrode of a transparent conductive oxide film (Indium Tin Oxide: ITO),
The cathode electrode layer is a thin metal electrode or a conductive oxide film, characterized in that, OLED display device.
7. The method of claim 6,
The substrate is
an auxiliary electrode formed between the anode electrodes;
The OLED display device further comprising a bank (bank) covering an edge of the anode electrode and an edge of the auxiliary electrode at both ends of the auxiliary electrode.
10. The method of claim 9,
wherein each of the R sub-pixel, the G sub-pixel and the B sub-pixel is formed in the anode electrode between the banks.

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