KR20220102452A - Sputtering apparatus and sputtering method using the same - Google Patents

Abstract

The present invention relates to a sputtering device and a sputtering method, and more specifically, to a sputtering device and a sputtering method, wherein deposition uniformity is improved for an object for deposition. The sputtering device according to an embodiment of the present invention comprises: a hollow outer-side rotating shaft; an inner rotating shaft arranged in the hollow of the outer-side rotating shaft and capable of rotating independently of the outer-side rotating shaft; a first arm connected to any one rotating shaft of the outer-side rotating shaft and the inner-side rotating shaft and rotated around the one rotating shaft by the rotation of the one rotating shaft; a second arm provided on one side of the first arm and capable of being rotated around one side of the first arm by the rotation of the other rotating shaft of the outer-side rotating shaft and the inner-side rotating shaft; and a first magnet assembly connected to one side of the second arm.

Description

Sputtering apparatus and sputtering method {Sputtering apparatus and sputtering method using the same}

The present invention relates to a sputtering apparatus and a sputtering method, and more particularly, to a sputtering apparatus and a sputtering method for improving deposition uniformity on an object to be deposited.

Sputtering, also called Physical Vapor Deposition (PVD), is the most widely known method for depositing metal layers and related materials in the fabrication of semiconductor integrated circuits. The most commercially important form of sputtering is plasma sputtering, which uses a magnetron behind a target to increase the density of the plasma and increase the sputtering rate.

Recently, plasma sputtering using a small magnetron has been widely used, and the small magnetron is rotated adjacent to the circumference of the target and the center of the small magnetron is adjacent to the sputtering surface of the target to generate a high-density plasma by projecting a strong magnetic field. It not only increases the sputtering rate but also generates a large amount of ionized sputter particles. Even when the magnetron is positioned away from the center of the target, the ions tend to diffuse towards the center and sputter deposits across the entire substrate (or wafer). In practice, unless other methods are devised, sputter deposition tends to result in the sputtering area (or area) of the target affecting the substrate edge being smaller than the substrate center so that the substrate edge is deposited thinner than the substrate center. There is this.

However, circumferentially located small magnetrons have the problem of (re)depositing a significant amount of sputtered particles or impurities on areas of the target that are not sputtered. Material deposited in the center of the target is not susceptible to further sputtering and forms thickening films that do not adhere well to the underlying target. In some ways, this (re)deposited film peels off the target, creating an excessively large number of particles in the chamber. These particles tend to fall on the substrate being processed and cause defects in the final integrated circuit due to the resulting loss of yield or reduced device reliability. As a result, it has become common practice to occasionally clean the target. In the cleaning mode, the sputtering conditions are changed due to production wafers that are not normally in the sputtering chamber, so that the center of the target is sputtered to remove (re)deposited sputter material at the center of the target.

Korean Patent Publication No. 10-0786713

The present invention provides a sputtering apparatus and a sputtering method for improving deposition uniformity on an object to be deposited by precisely controlling the rotational trajectory of a magnet assembly.

Sputtering apparatus according to an embodiment of the present invention is a hollow outer rotating shaft; an inner rotating shaft disposed in the hollow of the outer rotating shaft and rotatable independently of the outer rotating shaft; a first arm connected to any one of the outer rotating shaft and the inner rotating shaft and rotating about the one rotating shaft by rotation of the one rotating shaft; a second arm provided on one side of the first arm and rotatable about one side of the first arm by rotation of the other one of the outer rotating shaft and the inner rotating shaft; and a first magnet assembly connected to one side of the second arm.

a first rotating body connected to the other rotating shaft and rotating by rotation of the other rotating shaft; and a second rotating body connected to the second arm and rotating by the rotational force transmitted from the first rotating body to rotate the second arm.

a first magnetic counterweight connected to the other side of the second arm; and a counterweight connected to the other side of the first arm.

The counterweight may have a greater weight than the first magnetic counterweight.

a third arm provided on the other side of the first arm; a second magnet assembly connected to one side of the third arm; a first magnetic counterweight connected to the other side of the second arm; and a second magnetic counterweight connected to the other side of the third arm.

The third arm may be fixed to the other side of the first arm.

A third rotating body connected to the third arm and rotated by the rotational force transmitted from the first rotating body; further comprising, the third arm is the first arm of the third rotating body by rotation of the third rotating body. It can rotate around the other side.

It may further include; a control unit for respectively controlling the rotation of the outer rotation shaft and the inner rotation shaft.

The controller may temporally divide the process to differently control a difference in rotational speed between the outer rotating shaft and the inner rotating shaft.

The control unit may control the rotational speeds of the outer rotating shaft and the inner rotating shaft to be the same in the first half of the process, and differently control the rotational speeds of the outer rotating shaft and the inner rotating shaft in the second half of the process have.

The control unit may change the rotational trajectory of the first magnet assembly by controlling rotational speeds of the outer rotation shaft and the inner rotation shaft.

The controller may determine a rotation path of the first magnet assembly according to a deposition object.

The method may further include a reference position detector configured to detect reference positions of the first arm and the second arm.

The controller may position the first arm and the second arm at the reference position before starting the process.

A sputtering method according to another embodiment of the present invention includes a first arm connected to any one of the independently rotatable outer and inner rotating shafts to rotate around the one of the rotating shafts, and one side thereof The first magnet assembly is connected to the first sputtering while rotating the second arm rotating around one side of the first arm at the same speed by the rotation of the other one of the outer rotating shaft and the inner rotating shaft. process; and performing second sputtering while rotating the first arm and the second arm at different speeds.

The second sputtering process may be performed by lowering the rotation speed of the second arm than the rotation speed of the first arm.

A third arm to which a second magnet assembly is connected to one side of the other side of the first arm may be provided.

The first sputtering process may be performed while rotating the first arm and the second arm while the third arm is fixed to the first arm.

The first sputtering process or the second sputtering process may be performed by making the rotation start positions of the first magnet assembly and the second magnet assembly different.

The method may further include positioning the first arm and the second arm at a reference position.

The method may further include determining a rotation path of the first magnet assembly according to the deposition object.

The sputtering device according to the embodiment of the present invention can precisely control the rotation trajectory of the magnet assembly (or the first magnet assembly) by independently controlling the rotation of the outer rotation shaft and the inner rotation shaft, Accordingly, the deposition uniformity of the deposition target (or substrate) may be improved. In addition, even with a small magnet assembly (magnetron), the entire area of the sputtering target can be covered, and deposition uniformity can be secured regardless of the type of target material.

And by adjusting the rotational trajectory of the magnet assembly by giving a difference in rotational speed between the outer and inner rotational shafts, the rotational path of the magnet assembly can be set, and the rotational path of the magnet assembly can be determined according to the deposition object (or sputtering purpose) and sputtering suitable for the deposition target may be performed.

In addition, by temporally bisecting the sputtering process to differently control the difference in rotational speed between the outer and inner rotating shafts, the sputtering process is performed by dividing the main regions by the edges and the center of the deposition object in the first half and the second half of the process can be performed, and thus deposition uniformity on the deposition target can be further improved.

In addition, the reference position of the first arm and the second arm can be detected through the reference position detection unit, and the rotation start position and rotation end position of the magnet assembly can be confirmed through this, and the magnet assembly is positioned at the rotation start position in each process. When this is done, the process can be started and the process can be finished at the rotation end position. Accordingly, the sputtering uniformity between each process may be increased.

On the other hand, two magnet assemblies can be used by adding a second magnet assembly symmetrical to the first magnet assembly, and the deposition rate of the edge of the deposition target, which has been conventionally deposited relatively thinly, can be compensated, and thus In addition to improving the deposition uniformity of the film, it is possible to reduce the process time for mainly depositing the edge of the deposition object.

1 is a schematic perspective view showing a sputtering apparatus according to an embodiment of the present invention.
Figure 2 is a schematic cross-sectional view showing a sputtering apparatus according to an embodiment of the present invention.
Figure 3 is a conceptual diagram for explaining the rotation of the magnet assembly according to an embodiment of the present invention.
Figure 4 is a diagram showing a sputtering apparatus including two magnet assemblies according to an embodiment of the present invention.
5 is a diagram showing a deposition profile according to an embodiment of the present invention.
6 is a diagram for explaining a rotation path of the magnet assembly according to an embodiment of the present invention.
7 is a diagram showing a reference position detection unit according to an embodiment of the present invention.
8 is a conceptual diagram illustrating reference positions of a first arm and a second arm according to an embodiment of the present invention.
9 is a flowchart illustrating a sputtering method according to another embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in more detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in a variety of different forms, only these embodiments allow the disclosure of the present invention to be complete, and the scope of the invention to those of ordinary skill in the art completely It is provided to inform you. In the description, the same reference numerals are assigned to the same components, and the sizes of the drawings may be partially exaggerated in order to accurately describe the embodiments of the present invention, and the same reference numerals refer to the same elements in the drawings.

1 is a schematic perspective view showing a sputtering apparatus according to an embodiment of the present invention, Figure 2 is a schematic cross-sectional view showing a sputtering apparatus according to an embodiment of the present invention.

1 and 2, the sputtering apparatus 100 according to an embodiment of the present invention is a hollow outer rotating shaft 111; an inner rotation shaft 112 disposed in the hollow of the outer rotation shaft 112 and rotatable independently of the outer rotation shaft 111; It is connected to any one of the outer rotating shafts 111 and the inner rotating shaft 112 , and is rotated by the rotation of any one of the rotating shafts 111 or 112 . a first arm 121 rotating about the shaft 111 or 112; The first arm 121 is provided on one side of the first arm 121 and is rotated by the rotation of the other one of the outer rotating shaft 111 and the inner rotating shaft 112 . a second arm 122 rotatable about one side of the; and a first magnet assembly 131 connected to one side of the second arm 122 .

The outer rotation shaft 111 is tubular and may have a hollow in the center, and may rotate around the central rotation shaft 11 .

The inner rotation shaft 112 may be disposed in the hollow of the outer rotation shaft 112 and may rotate independently of the outer rotation shaft 111 . At this time, the inner rotation shaft 112 may also rotate around the rotation shaft 11 .

Here, first and second driving units 171 and 172 may be provided to the outer rotating shaft 111 and the inner rotating shaft 112 , respectively, and the outer rotating shaft 111 is the rotating shaft 11 by the first driving unit 171 . ), and the inner rotation shaft 112 may rotate about the rotation shaft 11 by the second driving unit 172 . For example, the first driving unit 171 may include a first motor 171a, a first pulley 171b, and a first belt 171c, and the second driving unit 172 may include a second motor 172a. , may include a second pulley (172b) and a second belt (172c). At this time, the outer rotation shaft 111 may have a first connection part 111b connected to the first pulley 171b by a first belt 171c, and a first pulley 171b by a first motor 171a. When rotated, the rotational force of the first pulley 171b may be transmitted by the first belt 171c to rotate the outer rotation shaft 111 . And in the inner rotation shaft 112, the second connection portion 112a may be connected to the second pulley 172b by the second belt 172c, and the second pulley 172b is rotated by the second motor 172a. When the rotational force of the second pulley 172b is transmitted by the second belt 172c, the inner rotation shaft 112 may rotate. Meanwhile, the first and second driving units 171 and 172 may be configured in a gear type, and in this case, the first connection unit 111b and the second connection unit 112a may be configured in a tooth shape.

The first arm 121 may be connected to any one of the rotating shafts 111 or 112 among the outer rotating shaft 111 and the inner rotating shaft 112, It can be rotated around any one of the rotation shafts 111 or 112 by this. For example, the outer rotating shaft 111 may be connected to the center of the first arm 121 , and according to the rotation of the outer rotating shaft 111 , the first arm 121 is rotated around the outer rotating shaft 111 . It can be rotated (or axially).

The second arm 122 may be provided on one side of the first arm 121 , and is formed by rotation of the other one of the outer rotating shaft 111 and the inner rotating shaft 112 . 1 It may be provided to be rotatable about one side of the arm 121 . Here, the second arm 122 may be rotatably connected to the other rotating shaft 112 or 111 about one side of the first arm 121 . For example, the center of the second arm 122 may be positioned to correspond to one side of the first arm 121 , and the center of the second arm 122 corresponding to one side of the first arm 121 may be an axis. The second arm 122 may rotate toward (or about). At this time, the second arm 122 may be rotated by the rotation of the second rotating body 142 to be described later, and the second rotating body rotated by the rotational force transmitted from the other rotating shaft 112 or 111 . It is connected to the 142 and can rotate together, and a detailed description of the rotation of the second arm 122 will be described later.

The first magnet assembly 131 may be connected to one side of the second arm 122 , and together with the second arm 122 by rotation of the first arm 121 , any one of the rotation shafts 111 or 112 . may be rotated around the , and may be rotated about one side of the first arm 121 by the rotation of the second arm 122 (eg, the center of the second arm as an axis). That is, the first magnet assembly 131 is displaced and rotated from one side of the first arm 121 , and one side of the first arm 121 orbits around the one of the rotation shafts 111 or 112 . or by rotating, a complex trajectory may be formed on one side of the second arm 122 .

Here, the first magnet assembly 131 includes an inner magnet portion 131a having a first polarity and an outer magnet portion 131b surrounding the inner magnet portion 131a and having a second polarity opposite to the first polarity. can do. The inner magnet part 131a has a first polarity and may be disposed in a central portion of the first magnet assembly 131 . In this case, the inner magnet part 131a may include one large magnet or a plurality of magnets.

The external magnet part 131b may surround the internal magnet part 131a , may have a second polarity opposite to the first polarity, and may be disposed on an edge of the first magnet assembly 131 . In this case, the outer magnet portion 131b may include a plurality of magnets and the inner magnet portion 131a may be disposed along the periphery, or may be formed of a ring-shaped magnet.

On the other hand, the first magnet assembly 131 may be a balanced magnetron in which the magnetic flux ratio of the inner magnet part 131a and the external magnet part 131b is the same, and the magnetic flux of the external magnet part 131b is the magnetic flux of the internal magnet part 131a. It could also be a larger unbalanced magnetron. At this time, in the unbalanced magnetron, the magnetic flux ratio between the inner magnet part 131a and the external magnet part 131b may be 1.5 to 2, and may be 3 to 5 or more for deep hole filling. Here, the first magnet assembly 131 is a magnetic yoke (131c, magnetic yoke) for supporting the inner magnet portion (131a) and the outer magnet portion (131b), the magnetic yoke (131c) opposite to the inner magnet portion (131a) It may further include a first magnetic pole piece (131d) covering the open end and a second magnetic pole piece (131e) facing the magnetic yoke (131c) and covering the open end of the external magnet portion (131b). have. The magnetic yoke 131c may be made of magnetically flexible stainless steel or the like, and upper ends of the inner magnet portion 131a and the outer magnet portion 131b may be attached and supported.

The first magnetic pole piece 131d may be provided to face the magnetic yoke 131c, and may cover the lower end of the opened inner magnet portion 131a. In this case, the first magnetic pole piece 131d may be provided in a circular shape.

The second magnetic pole piece 131e may be provided to face the magnetic yoke 131c, and may cover the lower end of the open external magnet portion 131b. In this case, the second magnetic pole piece 131e may be provided in an annular or ring shape.

The first magnet assembly 131 may generate a magnetic field component parallel to the plane of the sputtering target 30 placed underneath, and thus a high sputtering speed and a high sputtering rate in the adjacent portion of the sputtering target 30 It can create a small region of high density plasma that forms a highly metal ionized portion. And when the first magnet assembly 131 is an unbalanced magnetron, it is possible to generate magnetic field components that protrude from the sputtering target 30 toward the deposition object such as the substrate (or wafer) and induce metal ions to the deposition object, In the case of a balanced magnetron, a balanced (or symmetrical) magnetic field distribution may be generated by parallel and projecting magnetic field components.

The sputtering apparatus 100 according to the present invention includes a first rotating body 141 connected to the other rotating shaft 112 or 111 and rotating by the rotation of the other rotating shaft 112 or 111; and a second rotating body 142 connected to the second arm 122 and rotating by the rotational force transmitted from the first rotating body 141 to rotate the second arm 122. can

The first rotating body 141 may be connected to the other rotating shaft 112 or 111 and may be rotated by the rotation of the other rotating shaft 112 or 111 . That is, the first rotating body 141 may be connected to the other rotating shaft 112 or 111 to rotate about the rotating shaft 11 together with the other rotating shaft 112 or 111 . Meanwhile, the first rotating body 141 may be integrally formed with the other rotating shaft 112 or 111 .

The second rotating body 142 may be connected to the second arm 122 , and may transmit a rotational force from the first rotating body 141 , and may rotate by the rotational force transmitted from the first rotating body 141 . and, through this, the second arm 122 may be rotated around one side of the first arm 121 . For example, the second rotating body 142 may be provided on one side of the first arm 121 , may be supported on the first arm 121 , may be connected to the center of the second arm 122 , and may be The second arm 122 may be rotated around one side of the first arm 121 by rotating by the rotational force transmitted from the first rotating body 141 . Here, the second rotating body 142 may be connected to the second arm 122 by a shaft provided on the central shaft 142a, and the shaft provided on the central shaft 142a is the first arm 121 . It may be rotatably connected to one side. At this time, the second rotating body 142 may directly contact the first rotating body 141 to transmit rotational force, and is connected through a power transmission member (not shown) to transmit the rotational force from the first rotating body 141 . it might be

Here, the first rotating body 141 and the second rotating body 142 may be a cog wheel or a rotating wheel. When the first rotating body 141 and the second rotating body 142 are gears, they are composed of a first gear and a second gear and meshed with each other, so that the second rotating body in the first rotating body 141 is The rotational force may be transmitted to the 142, and an auxiliary rotational body (or auxiliary gear) is interposed as a power transmission member (not shown) between the first rotational body 141 and the second rotational body 142 to the first As the second rotating body 142 is engaged with the auxiliary rotating body that rotates in engagement with the rotating body 141 , the rotational force is transmitted from the first rotating body 141 to the second rotating body 142 through the auxiliary rotating body. it might be On the other hand, a chain may be used as a power transmission member (not shown), and the first rotating body 141 and the second rotating body 142 may be connected to each other by the chain, and the chain may be used for the first rotation. The second rotating body 142 may be rotated while being engaged with the entire 141 and the second rotating body 142 and being rotated by the rotation of the first rotating body 141 .

And when the first rotating body 141 and the second rotating body 142 are rotating wheels, the first rotating body 141 and the second rotating body 142 are composed of a pulley, and a power transmission member (not shown). By connecting to each other by a belt (belt) as a), the rotational force may be transmitted from the first rotating body 141 to the second rotating body 142 , and the surface of the first rotating body 141 and the second rotating body By direct contact with the surface of 142 , rotational force may be transmitted from the first rotating body 141 to the second rotating body 142 .

Meanwhile, the first rotating body 141 and the second rotating body 142 may be accommodated in an accommodation space formed by the first arm 121 and the gear cover 125 .

3 is a conceptual diagram for explaining the rotation of the magnet assembly according to an embodiment of the present invention.

Referring to FIG. 3 , the first magnet assembly 131 may be rotated about the rotation shaft 11 coincident with the center of the sputtering target 30 by the rotation of any one of the rotation shafts 111 or 112 , , may be rotated together with the second arm 122 along the first arm 121 that rotates about the rotation shaft 11 by the rotation of the one of the rotation shafts 111 or 112 . In addition, the first magnet assembly 131 may be rotated about one side of the first arm 121 (ie, the central axis of the second rotating body) by the rotation of the other rotating shaft 112 or 111 . In addition, rotational force is transmitted from the first rotating body 141 rotated by the rotation of the other rotating shaft 112 or 111 and the second rotating body 142 is rotated, so that the It may rotate together along the second arm 122 that rotates about the central axis 142a of the second rotating body 142 located on one side.

In other words, the second rotating body 142 positioned on one side of the first arm 121 may perform planetary orbital rotation about the rotating shaft 11 , and is connected to one side of the second arm 122 . The first magnet assembly 131 may be rotated in a satellite orbit around the central axis 142a of the second rotating body 142 that rotates the planetary orbit. Here, the planetary orbit rotation means that a planet rotates like an orbit around the sun, and the satellite orbit rotation means a satellite (eg, the moon) rotates around a planet (eg, the Earth) It means to rotate like an orbit. Accordingly, the first magnet assembly 131 is not only the edge portion (or the peripheral portion) of the sputtering target 30 through the planetary orbit rotation, but also the center (or near the center) of the sputtering target 30 through the satellite orbit rotation. A rotation path may be formed, and even with a size smaller than the sputtering target 30 , sputtering may be performed by covering the entire area (or the entire area) of the sputtering target 30 .

Therefore, the sputtering apparatus 100 of the present invention can independently control the rotation of the outer rotation shaft 111 and the inner rotation shaft 112, respectively, and accordingly, the rotation trajectory of the first magnet assembly 131 can be precisely controlled It is possible to control the entire area of the sputtering target 30 even with the small size of the first magnet assembly 131 . Accordingly, by adjusting the rotation trajectory of the first magnet assembly 131 by controlling the rotation of the outer rotation shaft 111 and the rotation of the inner rotation shaft 112, respectively, it is possible to improve the deposition uniformity for the deposition object, Deposition uniformity may be ensured regardless of the type of target material.

The sputtering apparatus 100 according to the present invention includes a first magnetic counterweight 151 connected to the other side of the second arm 122; and a counterweight 155 connected to the other side of the first arm 121 .

The first magnetic counterweight 151 may be connected to the other side of the second arm 122 , and may be provided symmetrically with the first magnet assembly 131 , and at the center of the second arm 122 (or the first magnet assembly 131 ). 2 It is possible to achieve (weight) equilibrium with the first magnet assembly 131 (about the central axis of the rotating body). For example, the first magnet counterweight 151 may have the same mass (or weight) as the first magnet assembly 131 , and will be balanced with the first magnet assembly 131 in the second arm 122 . Also, there may be a mass difference of ±10% in the mass of the first magnet assembly 131 .

The counterweight 155 may be connected to the other side of the first arm 121 , and may be provided symmetrically with the second arm 122 , and at the center of the first arm 121 (or about the rotation axis). ) The first magnet assembly 131 and the first magnet counterweight 151 may be in equilibrium with the second arm 122 connected (weight). For example, the counterweight 155 may have the same mass as the total weight of the second arm 122 to which the first magnet assembly 131 and the first magnet counterweight 151 are connected, and the first arm ( In 121), the first magnet assembly 131 and the first magnetic counterweight 151 may be in equilibrium with the connected second arm 122, the first magnet assembly 131 and the first magnetic counterweight 151 There may be a mass difference of ± 10% in the total weight of the second arm 122 to which is connected. On the other hand, the mass of the counterweight 155 is not only the total weight of the second arm 122 to which the first magnet assembly 131 and the first magnet counterweight 151 are connected, but also one side from the center of the first arm 121 . The weight of the first rotating body 141 and/or the second rotating body 142 provided as .

Here, the first magnetic counterweight 151 and the counterweight 155 may be implemented as integrated bodies of circular symmetrical shape, and a double counterweight of the first magnetic counterweight 151 and the counterweight 155 . The configuration consists of the first magnet assembly 131 and the first magnet assembly 131 due to the complex trajectory of the first magnet assembly 131 despite the absence of a mechanical support opposing the first arm 121 and/or the second arm 122 . Vibration of the connected first arm 121 and the second arm 122 may be suppressed or prevented. That is, even if the first arm 121 and the second arm 122 are formed in a cantilever type with only the first magnet assembly 131 , there is no excessive vibration by the first magnetic counterweight 151 and the counterweight 155 . It can enable eccentric and cantilevered movements. Accordingly, it is possible to suppress or prevent a decrease in deposition uniformity due to vibration of the first magnet assembly 131 .

And the counterweight 155 may have a greater weight than the first magnetic counterweight 151 . The counterweight 155 may primarily balance the first arm 121 with respect to the rotation shaft 11 on which the first arm 121 is rotated, and the first magnetic counterweight 151 is secondary With respect to the central axis 142a of the second rotating body 142 on which the second arm 122 is rotated, the balance of the second arm 122 can be adjusted. Since only the first magnet assembly 131 is provided on one side of the second arm 122 , the first magnetic counterweight 151 only needs to have the same weight as the mass of the first magnet assembly 131 , but the first arm 121 ) is provided on one side of the second arm 122 to which the first magnet assembly 131 and the first magnetic counterweight 151 are connected, as well as the second rotating body 142 and the like are supported, so the counterweight 155 is supported. should have the weight of not only the mass of the first magnet assembly 131 but also the mass of the first magnet counterweight 151 , the second arm 122 and the second rotating body 142 . Accordingly, the counterweight 155 may have a greater weight than the first magnetic counterweight 151 , and thus the balance of the second arm 122 with respect to the central axis 142a of the second rotating body 142 . Not only this can be made, but also the balance of the first arm 121 with respect to the rotation shaft 11 can be achieved. Accordingly, vibration of the first magnet assembly 131 due to the complex trajectory of the first magnet assembly 131 may be suppressed or prevented, and deterioration of deposition uniformity due to vibration of the first magnet assembly 131 may also be suppressed or prevented. can do.

On the other hand, the first arm 121 , the second arm 122 , the first magnet assembly 131 , the first magnetic counterweight 151 and the counterbalance weight 155 are the sputtering target 30 and the cover part 105 . ) may be accommodated and provided in the internal space formed.

Figure 4 is a picture showing a sputtering apparatus including two magnet assemblies according to an embodiment of the present invention, Figure 4 (a) is a cross-sectional view of the sputtering apparatus, Figure 4 (b) is a bottom view of the sputtering apparatus.

Referring to FIG. 4 , the sputtering apparatus 100 according to the present invention includes a third arm 123 provided on the other side of the first arm 121 ; a second magnet assembly 132 connected to one side of the third arm 123; a first magnetic counterweight 151 connected to the other side of the second arm 122; and a second magnetic counterweight 152 connected to the other side of the third arm 123 .

The third arm 123 may be provided on the other side of the first arm 121 , and may be provided symmetrically with the second arm 122 . For example, the center of the third arm 123 may be positioned to correspond to the other side of the first arm 121 .

The second magnet assembly 132 may be connected to one side of the third arm 123 , and together with the third arm 123 by rotation of the first arm 121 , any one of the rotation shafts 111 or 112 . can be rotated around In addition, when the third arm 123 is rotatable, the third arm 123 rotates about the other side of the first arm 121 (eg, with the center of the third arm as an axis). can do. Through this, the second magnet assembly 132 is displaced and rotated from the other side of the first arm 121 , and the other side of the first arm 121 orbits around the one of the rotation shafts 111 or 112 . or by rotating, a complex trajectory may be formed on one side of the third arm 123 .

Here, the second magnet assembly 132 corresponds to the first magnet assembly 131 , and may be configured in the same manner as the first magnet assembly 131 , and includes an internal magnet part 132a and an external magnet part 132b . may include In addition, the second magnet assembly 132 may further include a magnetic yoke 132c and a first magnetic pole piece 132d and a second magnetic pole piece 132e like the first magnet assembly 131 .

The first magnetic counterweight 151 may be connected to the other side of the second arm 122 , and may be provided symmetrically with the first magnet assembly 131 , and the first magnet assembly at the center of the second arm 122 . (131) and weight equilibrium can be achieved. For example, the first magnet counterweight 151 may have the same mass as the first magnet assembly 131 , and may be balanced with the first magnet assembly 131 in the second arm 122 .

The second magnetic counterweight 152 may be connected to the other side of the third arm 123 , and may be provided symmetrically with the second magnet assembly 132 , and may be located at the center of the third arm 123 . (132) and (weight) equilibrium can be achieved. For example, the second magnet counterweight 152 may have the same mass as the second magnet assembly 132 , and may be balanced with the second magnet assembly 132 in the third arm 123 , There may be a mass difference of ±10% in the mass of the two magnet assembly 132 . At this time, the second magnetic counterweight 152 may be configured the same as the first magnetic counterweight 151 , and may have the same mass as the magnet assembly 132 .

Through this, the balance of the first arm 121 can be easily adjusted with respect to the rotation shaft 11 on which the first arm 121 is rotated. That is, the second arm 122 to which the first magnet assembly 131 and the first magnetic counterweight 151 are connected, and the third arm 123 to which the second magnet assembly 132 and the second magnetic counterweight 152 are connected. ) are symmetrical to each other so that the balance of the first arm 121 with respect to the axis of rotation 11 can be naturally adjusted. Accordingly, in order to adjust the mass of the counterweight 155 to the total weight of the second arm 122 to which the first magnet assembly 131 and the first magnet counterweight 151 are connected, the first magnet assembly 131 and The process of weighing or calculating the total weight of the second arm 122 to which the first magnetic counterweight 151 is connected may be omitted.

When the second magnet assembly 132 is further included in addition to the first magnet assembly 131 , the second magnet assembly 132 may be responsible for edge deposition of the deposition object, so that deposition is relatively thin in the prior art. It is possible to compensate for the deposition rate of the edge of the deposition target, which was previously used, and solves the problem of depositing thinner than the center (part) of the deposition target at the edge (part) of the deposition target without an additional sputtering process, thereby depositing the deposition target The uniformity can be improved.

Here, the third arm 123 may be fixed to the other side of the first arm 121 . For example, the third arm 123 may not rotate in a state disposed in the extending direction of the first arm 121 , and the second magnet assembly 132 may move away from the rotation shaft 11 by the sputtering target 30 . It may be located corresponding to the edge of the.

While the second arm 122 and the third arm 123 are rotated, the first magnet assembly 131 and the second magnet assembly 132 are both close to the rotation shaft 11 and are positioned to correspond to the center of the sputtering target 30 In this case, a repulsive force (or repulsive force) is generated between the external magnet part 131b of the first magnet assembly 131 and the external magnet part 132b of the second magnet assembly 132 of the same polarity. By this, abnormal driving of the first magnet assembly 131 and/or the second magnet assembly 132 may occur, and the first magnet assembly 131 and/or the second magnet assembly 132 may deviate from the set rotation path. may be

However, when the third arm 123 is fixed to the other side of the first arm 121 so that the second magnet assembly 132 is located only in correspondence with the edge of the sputtering target 30 away from the rotation shaft 11, The case where both the first magnet assembly 131 and the second magnet assembly 132 are positioned to correspond to the center of the sputtering target 30 close to the rotation shaft 11 does not occur, and the first magnet assembly 131 and Abnormal driving of the first magnet assembly 131 and the second magnet assembly 132 by the repulsive force (or repulsive force) between the second magnet assembly 132 can be prevented, and the first magnet assembly from the set rotation path ( 131) and the separation of the second magnet assembly 132 may be prevented.

In addition, when the second magnet assembly 132 is positioned to correspond to the edge of the sputtering target 30 away from the rotation shaft 11, the second magnet assembly 132 may be responsible for edge deposition of the deposition target. It is possible to compensate for the deposition rate of the edge of the deposition target, which has been conventionally deposited relatively thinly, and solves the problem of depositing thinner than the center of the deposition target at the edge of the deposition target without an additional sputtering process, so that the deposition on the deposition target The uniformity can be improved. In addition, when depositing by dividing the edge of the deposition target and the center of the deposition target, a (process) time for (mainly) depositing the edge of the deposition target may be reduced.

The sputtering apparatus 100 according to the present invention may further include a;

The third rotating body 143 may be connected to the third arm 123 , and may be rotated by a rotational force transmitted from the first rotating body 141 . For example, the third rotating body 143 may be provided on the other side of the first arm 121 , may be supported by the first arm 121 , and may be connected to the center of the third arm 123 , The third arm 123 may be rotated around the other side of the first arm 121 by rotating by the rotational force transmitted from the first rotating body 141 . Here, the third rotation body 143 may be connected to the third arm 122 by a shaft provided on the central shaft 143a, and the shaft provided on the central shaft 143a is the first arm 121 . It may be rotatably connected to the other side. At this time, the third rotating body 143 may directly contact the first rotating body 141 to transmit rotational force, and is connected through a power transmission member (not shown) to transmit the rotational force from the first rotating body 141 . it might be

And the third arm 123 may rotate around the other side of the first arm 121 by the rotation of the third rotating body 143 . The third rotation body 143 rotated by the rotational force transmitted from the first rotation body 141 is provided on the other side of the first arm 121 and is connected to the third arm 123 , thereby making the third rotation body 143 . ), the third arm 123 may rotate around the other side of the first arm 121 by the rotation. For example, the center of the third arm 123 may be positioned to correspond to the other side of the first arm 121 , and the center of the third arm 123 corresponding to the other side of the first arm 121 may be an axis. The third arm 123 may rotate toward (or to the center).

Here, the second magnet assembly 132 may be rotated about the rotation shaft 11 coincident with the center of the sputtering target 30 by the rotation of the one of the rotation shafts 111 or 112, It may rotate together with the third arm 123 along the first arm 121 that rotates about the rotation shaft 11 by the rotation of the rotation shaft 111 or 112 of the . In addition, the second magnet assembly 132 may rotate about the other side of the first arm 121 (ie, the central axis of the third rotation body) by the rotation of the other rotation shaft 112 or 111 . In addition, rotational force is transmitted from the first rotating body 141 rotated by the rotation of the other rotating shaft 112 or 111 and the third rotating body 143 rotates, so that the first arm 121 It can rotate together along the third arm 123 that rotates about the central axis 143a of the third rotating body 143 located on the other side.

In other words, the third rotating body 143 positioned on the other side of the first arm 121 may perform a planetary orbit rotation about the rotational shaft 11 , and the second second body 143 connected to one side of the third arm 123 . The magnet assembly 132 may perform satellite orbit rotation about the central axis 143a of the third rotating body 143 for planetary orbit rotation. Accordingly, the second magnet assembly 132 may have a rotation path formed in the center of the sputtering target 30 through the satellite orbit as well as the edge of the sputtering target 30 through the planetary orbit rotation, and the sputtering target Even with a size smaller than (30), sputtering may be performed by covering the entire area (or the entire area) of the sputtering target 30 .

In this case, the rotation start position of the first magnet assembly 131 and the rotation start position of the second magnet assembly 132 may be different. For example, the rotation starting position of the first magnet assembly 131 may correspond to the edge of the sputtering target 30 , and the rotation starting position of the second magnet assembly 132 is at the center of the sputtering target 30 . Correspondingly, the rotation speed of the second rotation body 142 and the rotation speed of the third rotation body 143 may be the same, and the rotation speed of the second arm 122 and the rotation speed of the third arm 123 may be the same. The speed may be the same. In this case, when the first magnet assembly 131 is positioned to correspond to the center of the sputtering target 30 close to the rotation shaft 11 , the second magnet assembly 132 is far from the rotation shaft 11 sputtering target 30 . is positioned to correspond to the edge of the first magnet assembly 131 and the second magnet assembly 132 to prevent abnormal driving of the first magnet assembly 131 and the second magnet assembly 132 due to the repulsive force It is also possible to prevent the separation of the first magnet assembly 131 and the second magnet assembly 132 from the set rotation path.

Meanwhile, the second rotating body 142 and the third rotating body 143 may have different sizes. That is, the rotation speed of the second rotation body 142 and the rotation speed of the third rotation body 143 may be different, and accordingly, the rotation speed of the second arm 122 and the rotation speed of the third arm 123 . may be different. When the rotation speed of the second rotation body 142 and the rotation speed of the third rotation body 143 are the same, the sputtering target is once every time the second rotation body 142 and the third rotation body 143 rotate once. The first magnet assembly 131 and the second magnet assembly 132 meet at the center of the 30 , and the number of times that a repulsive force is generated between the first magnet assembly 131 and the second magnet assembly 132 increases. do. However, when the rotation speed of the second rotation body 142 and the rotation speed of the third rotation body 143 are different from each other, the first magnet assembly 131 and the second magnet assembly 132 in the center of the sputtering target 30 . ) may be reduced, the number of times that a repulsive force is generated between the first magnet assembly 131 and the second magnet assembly 132 may be reduced, and the first magnet assembly 131 and the second magnet assembly ( It is possible to suppress the abnormal driving of the 132 and the separation of the first magnet assembly 131 and the second magnet assembly 132 from the set rotation path. In addition, since the rotation speed of the second arm 122 and the rotation speed of the third arm 123 are different from each other, the time for the first magnet assembly 131 and the second magnet assembly 132 to be adjacent to each other may be relatively reduced. Relatively, the repulsive force between the first magnet assembly 131 and the second magnet assembly 132 may be reduced.

The sputtering apparatus 100 according to the present invention may further include a control unit (not shown) for controlling the rotation of the outer rotating shaft 111 and the inner rotating shaft 112 , respectively.

A controller (not shown) may control the rotation of the outer rotation shaft 111 and the inner rotation shaft 112 , respectively, and control the rotation speed of the outer rotation shaft 111 and the rotation speed of the inner rotation shaft 112 , respectively can do. For example, a control unit (not shown) may be connected to the first and second driving units 171 and 172, and control the first and second driving units 171 and 172 to control the rotation speed of the outer rotating shaft 111 and the inner rotating shaft ( 112) can control the rotation speed, respectively. The rotation of the outer rotation shaft 111 and the inner rotation shaft 112 can be independently controlled through a control unit (not shown), and accordingly, the first magnet assembly 131 and/or the second magnet assembly 132 . By precisely controlling the rotation trajectory of In addition, the rotation path of the first magnet assembly 131 and/or the second magnet assembly 132 may be set by giving a difference in rotation speed between the outer rotation shaft 111 and the inner rotation shaft 112 .

5 is a diagram showing a deposition profile according to an embodiment of the present invention. FIG. 5 (a) shows a deposition profile in which the rotation speed of the first arm and the second arm are the same, and FIG. 5 (b) is the first arm. shows a deposition profile in which the rotation speed of the second arm is faster than the rotation speed of the second arm. A deposition profile made faster than the rotational speed of the second arm is shown. In addition, in the rotation trajectories of FIGS. 5A and 5B , a dotted line indicates a rotation trajectory of one side of the first arm (or a center of the second arm), and a solid line indicates a rotation trajectory of the first magnet assembly.

Referring to FIG. 5 , the controller (not shown) may temporally divide the process to differently control the rotational speed difference between the outer rotation shaft 111 and the inner rotation shaft 112 . For example, the sputtering process for one deposition object may be temporally bisected into the first half and the second half (or the first sputtering process and the second sputtering process), and in any one part (or section) of the first half and the second half It is possible to make the rotation speed of the outer rotation shaft 111 and the inner rotation shaft 112 the same so that there is no rotation speed difference between the outer rotation shaft 111 and the inner rotation shaft 112, and the other part of the first half and the second half In , the rotational speed of the outer rotating shaft 111 and the inner rotating shaft 112 may be different to be different between the outer rotating shaft 111 and the inner rotating shaft 112 . That is, the rotation speed of the first arm 121 and the second arm 122 can be the same by making the rotation speed of the outer rotation shaft 111 and the inner rotation shaft 112 the same in any one part, In the other part, the rotation speed of the first arm 121 and the second arm 122 may be different by making the rotation speed of the outer rotation shaft 111 and the inner rotation shaft 112 different.

When the rotation speeds of the outer rotation shaft 111 and the inner rotation shaft 112 are the same and thus the rotation speeds of the first arm 121 and the second arm 122 are the same, as shown in FIG. It can be deposited thicker than the center at the edges. And when the rotation speed of the outer rotation shaft 111 is faster than the rotation speed of the inner rotation shaft 112, the rotation speed of the first arm 121 is faster than the rotation speed of the second arm 122 (b) As shown, the deposition may be thicker than the edges at the center of the deposition object.

Accordingly, the control unit (not shown) can control the rotational speeds of the outer rotation shaft 111 and the inner rotation shaft 112 equally in the first half of the process, and the outer rotation shaft 111 and the inner rotation shaft 111 in the second half of the process The rotation speed of the rotating shaft 112 may be controlled differently. For example, in the first half of the process, the rotational speed of the first arm 121 and the second arm 122 may be the same by making the rotational speed of the outer rotating shaft 111 and the inner rotating shaft 112 the same. In the second half of the process, the rotation speed of the first arm 121 and the second arm 122 may be different by making the rotation speed of the outer rotation shaft 111 and the inner rotation shaft 112 different.

In general sputtering, the sputtering area (or area) of the sputtering target 30 that affects the edge of the deposition target (or provides sputtered particles to be deposited) is reduced from the center of the substrate, so that at the edge of the deposition target, the It is deposited thinner than the center. Accordingly, it is possible to cover the edge of the sputtering target 30 by making the rotation speed of the first arm 121 and the second arm 122 the same in the first half of the process, and accordingly, the edge of the deposition target is closer to the center than the center. It can be deposited thicker, and can compensate for the deposition rate of the edge of the deposition target, which has been conventionally deposited relatively thinly. In the second half of the process, the rotation speed of the first arm 121 and the second arm 122 may be different to cover the entire area of the sputtering target 30, and provide (or influence) the sputtering particles to be deposited. The sputtering area of the sputtering target 30 is relatively wider than the edge of the deposition target, so it can be deposited thicker than the edge at the center of the deposition target, and the sputtering process for one deposition target (first half + In the second half), as shown in FIG. 5(c) , the deposition uniformity for one deposition target may be improved.

Accordingly, the sputtering apparatus 100 of the present invention divides the sputtering process in time through a control unit (not shown) to differently control the rotational speed difference between the outer rotating shaft 111 and the inner rotating shaft 112. The sputtering process may be performed by dividing the main regions by the edges and the center of the deposition target in the first half and the second half of the process, and thus the deposition uniformity of the deposition target may be further improved. For example, by depositing mainly the edge of the deposition object in the first half of the process, and mainly depositing the center of the deposition object in the second half of the process, the area of the deposition object in the entire process for one deposition object Star deposition uniformity may be improved.

6 is a diagram for explaining a rotation path of the magnet assembly according to an embodiment of the present invention, FIG. 6 (a) is a rotation orbit and a rotation path in which the rotation speed of the second arm is faster than the rotation speed of the first arm 6(b) shows a rotational trajectory and a rotational path in which the rotational speed of the first arm is faster than the rotational speed of the second arm. Here, the blue line indicates the rotation trajectory of one side of the first arm (or the center of the second arm), and the green line indicates the rotation trajectory and the rotation path of the first magnet assembly.

Referring to FIG. 6 , a controller (not shown) may change (or adjust) the rotational trajectory of the first magnet assembly 131 by controlling the rotational speeds of the outer rotation shaft 111 and the inner rotation shaft 112 . . A control unit (not shown) may control the rotation speed of the outer rotation shaft 111 and the inner rotation shaft 112 to adjust the rotation speed of the first arm 121 and the second arm 122, and the first arm ( The rotational trajectory of the first magnet assembly 131 may be changed according to the rotational speeds of the 121 and the second arm 122 . In this case, the rotation path of the first magnet assembly 131 may be set by adjusting the rotation trajectory of the first magnet assembly 131 . Here, the rotational path of the first magnet assembly 131 means the entire path of the first magnet assembly 131 formed by the rotational trajectory of the first magnet assembly 131 .

For example, the rotational orbit in which the rotational speed of the first arm 121 is faster than the rotational speed of the second arm 122 may be a spiral rotational orbit as shown in FIG. 6(b), and the second arm ( A rotational trajectory in which the rotational speed of the 122 is faster than the rotational speed of the first arm 121 may form a radially shaped rotational path as shown in FIG. 6( a ). In addition, when the rotation speed of the first arm 121 is much faster than the rotation speed of the second arm 122 , a corolla type rotation path may be formed. For example, the rotation path of the fire type may be a rotation path such as actinomorphic, wheel-shaped rotate, tongue-shaped ligulate, and the like.

Here, the controller (not shown) may determine the rotation path of the first magnet assembly 131 according to the deposition object. The rotation path of the first magnet assembly 131 may be determined according to the deposition object, and the deposition object may be changed according to the purpose of sputtering. That is, the rotation path of the first magnet assembly 131 may be determined according to the purpose of sputtering, and the controller (not shown) controls the rotation path of the first magnet assembly 131 according to the deposition object (or the purpose of sputtering). can decide

For example, when a deposition substrate is used as the deposition object to perform a deposition process on the substrate, the rotational path of the first magnet assembly 131 may be determined as a radial rotational path, and the sputtering target 30 . It is possible to achieve uniform (or high uniformity) sputtering over the entire area of .

Meanwhile, cleaning of the sputtering target 30 may be performed in order to remove contaminants and the like from the surface of the sputtering target 30 . For example, a small first magnet assembly 131 smaller than the sputtering target 30 may have a significant amount of sputtered particles or impurities deposited on the non-sputtered region of the center (part) of the sputtering target 30, and , The material deposited in the center (part) of the sputtering target 30 in this way is not easy to be further sputtered, and forms a thick film that does not adhere well to the base target and is peeled off from the sputtering target 30. In the chamber (not shown) Excessively many particles may be generated, or they may fall on the deposition substrate and act as particles (or contaminants). Due to this, the cleaning of the sputtering target 30 can be performed, and a dummy substrate is provided as the deposition target to remove the sputtered particles or impurities deposited in the center (part) of the sputtering target 30. can

When a dummy substrate is used as the deposition object for cleaning the sputtering target 30, a rotation path (or The rotation path of the first magnet assembly 131 can be determined by the spiral rotation path), and the sputtered material (or sputtered particles) or impurities deposited in the center of the sputtering target 30 can be effectively removed by sputtering. . In this case, the sputtering material removed by sputtering from the center of the sputtering target 30 may be deposited on the dummy substrate.

In addition, the controller (not shown) may adjust the rotational trajectory of the second magnet assembly 132 in a similar (or the same) manner as the first magnet assembly 131 , and determine the rotational path of the second magnet assembly 132 . .

Therefore, the sputtering apparatus 100 of the present invention gives a difference in rotational speed to the outer rotating shaft 111 and the inner rotating shaft 112 through a control unit (not shown) to give the first magnet assembly 131 and/or the second magnet By adjusting (or changing) the rotational trajectory of the assembly 132, a rotational path of the first magnet assembly 131 and/or the second magnet assembly 132 can be set, and the first magnet assembly ( 131) and/or the rotation path of the second magnet assembly 132 may be determined, and sputtering suitable for the deposition object may be performed.

7 is a diagram illustrating a reference position detection unit according to an embodiment of the present invention. FIG. 7 (a) is a top view showing a first detection unit and a second detection unit, and FIG. to be.

Referring to FIG. 7 , the sputtering apparatus 100 according to the present invention may further include a reference position detection unit 160 for detecting reference positions of the first arm 121 and the second arm 122 .

The reference position detection unit 160 may detect reference positions of the first arm 121 and the second arm 122 . For example, the reference position detection unit 160 includes a first detection unit 161 that detects the reference position of the first arm 121 and a second detection unit 162 that detects the reference position of the second arm 122 . can do. The first detection unit 161 may detect a reference position of the first arm 121 , and detect the first movable body 161b and the first movable body 161b whose positions change according to the rotation of the first arm 121 . and a first sensor unit 161a. For example, the first movable body 161b may be provided on the upper end 111a of the outer rotating shaft 111 , and may be rotationally moved about the rotating shaft 11 by the outer rotating shaft 111 , and the first As the arm 121 also rotates by the outer rotation shaft 111 , the position of the first movable body 161b may change according to the rotation of the first arm 121 .

The first sensor unit 161a may detect the first movable body 161b, detect the movement of the first movable body 161b, and move one side of the first arm 121 according to the position of the first movable body 161b. position can be detected.

The second detector 162 may detect a reference position of the second arm 122 , and detect the second movable body 162b and the second movable body 162b whose positions change according to the rotation of the second arm 122 . and a second sensor unit 162a. For example, the second movable body 162b may be provided on an upper portion of the second pulley 172b that rotates together with the inner rotation shaft 112, and may rotate about the central axis of the second pulley 172b. , may be rotated in proportion to (or inversely proportional to) the rotation of the inner rotating shaft 112 . Here, as the second arm 122 also rotates by the inner rotation shaft 112 , the position of the second movable body 162b may change according to the rotation of the second arm 122 , and the second movable body 162b The position of one side of the second arm 122 may be known according to the position.

The second sensor unit 162a may detect the second movable body 162b, detect the movement of the second movable body 162b, and move one side of the second arm 122 according to the position of the second movable body 162b. position can be detected.

On the other hand, when the outer rotation shaft 111 rotates the second arm 122 and the inner rotation shaft 112 rotates the first arm 121 , the first detection unit 161 and the second detection unit 162 . may be interchanged with each other.

Figure 8 is a conceptual view for explaining the reference position of the first arm and the second arm according to an embodiment of the present invention, Figure 8 (a) is a first magnet assembly is located corresponding to the edge of the sputtering target 1 shows the position, and FIG. 8 (b) shows the second position where the first magnet assembly is rotated 90° clockwise from the position corresponding to the edge of the sputtering target, and FIG. 8 (c) is the first magnet assembly Shows a third position positioned corresponding to the center of the sputtering target, Figure 8 (d) shows a fourth position in which the first magnet assembly is rotated 90° clockwise from a position corresponding to the center of the sputtering target.

Referring to FIG. 8 , the controller (not shown) may position the first arm 121 and the second arm 122 at the reference position before the process starts. For example, the first position of the first arm 121 and the second arm 122 so that the first magnet assembly 131 is positioned to correspond to the edge of the sputtering target 30 (FIG. 8(a)) , A second position of the first arm 121 and the second arm 122 such that the first magnet assembly 131 is rotated 90° clockwise from a position corresponding to the edge of the sputtering target 30 ( 8 (b)), a third position of the first arm 121 and the second arm 122 so that the first magnet assembly 131 is positioned to correspond to the center of the sputtering target 30 (FIG. 8 (c)) )) and a fourth position of the first arm 121 and the second arm 122 such that the first magnet assembly 131 is rotated 90° clockwise from a position corresponding to the center of the sputtering target 30 Any one of (FIG. 8(d)) may be set as the reference position, and the first arm 121 and the second arm 122 may be positioned at the reference position before starting the sputtering process. At this time, the first arm 121 and the second arm ( 122) may be positioned at the reference position.

Meanwhile, the setting range of the reference position may be widened by adding the fifth to the eighth positions at each angle (45°) between the first to fourth positions. In this case, the selection of the reference position may vary depending on the type of the target material, and the reference position may be different depending on the type of the target material.

The sputtering apparatus 100 of the present invention may detect the reference positions of the first arm 121 and the second arm 122 through the reference position detection unit 160, through which the first magnet assembly 131 and / Alternatively, the rotation start position and rotation end position of the second magnet assembly 132 may be checked, and the first magnet assembly 131 and/or the second magnet assembly 132 may be configured for every sputtering process (or each of the deposition objects). It is possible to start the process when it is positioned at the rotation start position and to finish the process at the rotation end position. In addition, a rotation start position and a rotation end position of the first magnet assembly 131 and/or the second magnet assembly 132 may be determined according to the type of the target material. Accordingly, sputtering uniformity between each sputtering process (or each of the deposition targets) may be increased, and deposition uniformity may be secured regardless of the type of target material.

9 is a flowchart illustrating a sputtering method according to another embodiment of the present invention.

A sputtering method according to another embodiment of the present invention will be described in more detail with reference to FIG. 9 , but matters overlapping with those described above in relation to the sputtering apparatus according to an embodiment of the present invention will be omitted.

The sputtering method according to another embodiment of the present invention is connected to any one of the rotating shafts 111 or 112 of the independently rotatable outer rotating shaft 111 and the inner rotating shaft 112 to the one of the rotating shafts ( 111 or 112), and a first magnet assembly 131 is connected to one side thereof to rotate the other of the outer rotating shaft 111 and the inner rotating shaft 112. performing first sputtering while rotating the second arm 122 rotating around one side of the first arm 121 at the same speed by the rotation of the shaft 112 or 111 (S100); and performing second sputtering while rotating the first arm 121 and the second arm 122 at different speeds (S200).

The first rotating shaft 111 or 112 connected to any one of the independently rotatable outer rotating shaft 111 and the inner rotating shaft 112 and rotating around the one rotating shaft 111 or 112 The arm 121 and the first magnet assembly 131 are connected to one side thereof by rotation of the other rotating shaft 112 or 111 of the outer rotating shaft 111 and the inner rotating shaft 112 . The first sputtering is performed while rotating the second arm 122 rotating around one side of the first arm 121 at the same speed (S100). The first sputtering may be performed while rotating the first arm 121 and the second arm 122 at the same speed, and the first arm 121 has an independently rotatable outer rotating shaft 111 and an inner rotating shaft 112 . ) is connected to any one of the rotating shafts (111 or 112) and can rotate around the one of the rotating shafts (111 or 112), and the second arm 122 is a first magnet assembly 131 on one side. may be connected to rotate around one side of the first arm 121 by rotation of the other one of the outer rotating shaft 111 and the inner rotating shaft 112 . At this time, the second arm 122 can rotate about one side of the first arm 121 by the rotation of the second rotating body 142 to which the rotational force is transmitted from the other rotating shaft 112 or 111 . and may be connected to the second rotating body 142 and rotate together with the second rotating body 142 by the rotation of the other rotating shaft 112 or 111 .

In the first sputtering, the edge of the sputtering target 30 may be covered by making the rotation speed of the first arm 121 and the second arm 122 the same, and accordingly, the edge of the deposition target is deposited thicker than the center. In this case, it is possible to compensate for the deposition rate of the edge of the deposition target, which is conventionally deposited relatively thinly.

Then, a second sputtering is performed while rotating the first arm 121 and the second arm 122 at different speeds ( S200 ). In the second sputtering, the first arm 121 and the second arm 122 may have different rotational speeds to cover the entire area of the sputtering target 30, and the sputtering target 30 provides sputtered particles to be deposited. ), the sputtering region may be relatively wider than the edge of the deposition object, so that the deposition target may be deposited thicker than the edge at the center of the deposition target.

Here, the first sputtering process (S100) and the second sputtering process (S200) are not limited in order, and after performing the first sputtering process (S100), the second sputtering process (S200) ), or after performing the second sputtering process (S200), the first sputtering process (S100) may be performed. A sputtering method including the first sputtering step (S100) and the second sputtering step (S200) is sufficient.

In the first sputtering process (S100), the deposition rate of the edge of the deposition target, which was conventionally deposited relatively thinly, is compensated, and in the second sputtering process (S200), the entire area of the sputtering target 30 is covered. By performing the first sputtering process (S100) and the second sputtering process (S200) for one deposition object, in the first sputtering process (S100), the edge of the deposition object is greater than the center It is deposited relatively thickly, and in the second sputtering process ( S200 ), the center of the deposition object is deposited relatively thicker than the edge, so that deposition uniformity for one deposition object may be improved as a whole.

In this case, performing the second sputtering process ( S200 ) after performing the first sputtering process ( S100 ) may be easy to adjust the deposition thickness deposited on the deposition object to a predetermined thickness.

Here, the second sputtering process ( S200 ) may be performed by making the rotation speed of the second arm 122 slower than the rotation speed of the first arm 121 . That is, by making the rotational speed of the second arm 122 slower than the rotational speed of the first arm 121 , the rotational trajectory of the first magnet assembly 131 may be adjusted to be a helical rotational trajectory. The deposition rate at the center of the deposition object may be increased by using a rotation path (or a spiral rotation path) set by . In the first sputtering process (S100), since the deposition rate of the edge of the deposition object is high, in the second sputtering process (S200), the second sputtering process (S100) is opposite to the first sputtering process (S100) through a spiral rotation trajectory. It is possible to increase the deposition rate at the center of the deposition target. Accordingly, it is possible to improve the deposition uniformity of the one deposition object as a whole.

A third arm 123 to which the second magnet assembly 132 is connected to one side of the other side of the first arm 121 may be provided. When the second magnet assembly 132 is further included in addition to the first magnet assembly 131 , the second magnet assembly 132 may be responsible for edge deposition of the deposition object, so that deposition is relatively thin in the prior art. It is possible to compensate for the deposition rate of the edge of the deposition object, which was previously used, and to improve the deposition uniformity on the deposition object by solving the problem of depositing thinner than the center of the deposition object at the edge of the deposition object without an additional sputtering process. .

The first sputtering process ( S100 ) may be performed while rotating the first arm 121 and the second arm 122 while the third arm 123 is fixed to the first arm 121 . For example, the third arm 123 may not rotate in a state disposed in the extending direction of the first arm 121 , and the second magnet assembly 132 may move away from the rotation shaft 11 by the sputtering target 30 . It may be located corresponding to the edge of the.

While the second arm 122 and the third arm 123 are rotated, the first magnet assembly 131 and the second magnet assembly 132 are both close to the rotation shaft 11 and are positioned to correspond to the center of the sputtering target 30 In this case, a repulsive force (or repulsive force) is generated between the external magnet part 131b of the first magnet assembly 131 and the external magnet part 132b of the second magnet assembly 132 of the same polarity. By this, abnormal driving of the first magnet assembly 131 and/or the second magnet assembly 132 may occur, and the first magnet assembly 131 and/or the second magnet assembly 132 may deviate from the set rotation path. may be

However, when the third arm 123 is fixed to the other side of the first arm 121 so that the second magnet assembly 132 is located only in correspondence with the edge of the sputtering target 30 away from the rotation shaft 11, The case where both the first magnet assembly 131 and the second magnet assembly 132 are positioned to correspond to the center of the sputtering target 30 close to the rotation shaft 11 does not occur, and the first magnet assembly 131 and Abnormal driving of the first magnet assembly 131 and the second magnet assembly 132 by the repulsive force (or repulsive force) between the second magnet assembly 132 can be prevented, and the first magnet assembly from the set rotation path ( 131) and the separation of the second magnet assembly 132 may be prevented.

In addition, when the second magnet assembly 132 is positioned to correspond to the edge of the sputtering target 30 away from the rotation shaft 11, the second magnet assembly 132 may be responsible for edge deposition of the deposition target. It is possible to compensate for the deposition rate of the edge of the deposition target, which has been conventionally deposited relatively thinly, and solves the problem of depositing thinner than the center of the deposition target at the edge of the deposition target without an additional sputtering process, so that the deposition on the deposition target The uniformity can be improved. In addition, when depositing by dividing the edge of the deposition target and the center of the deposition target, a (process) time for (mainly) depositing the edge of the deposition target may be reduced.

The first sputtering process ( S100 ) or the second sputtering process ( S200 ) may be performed by making the rotation start positions of the first magnet assembly 131 and the second magnet assembly 132 different. That is, the rotation start position of the first magnet assembly 131 and the rotation start position of the second magnet assembly 132 may be different. For example, the rotation starting position of the first magnet assembly 131 may correspond to the edge of the sputtering target 30 , and the rotation starting position of the second magnet assembly 132 is at the center of the sputtering target 30 . may correspond, and the rotation speed of the second arm 122 and the rotation speed of the third arm 123 may be the same. In this case, when the first magnet assembly 131 is positioned to correspond to the center of the sputtering target 30 close to the rotation shaft 11 , the second magnet assembly 132 is far from the rotation shaft 11 sputtering target 30 . is positioned to correspond to the edge of the first magnet assembly 131 and the second magnet assembly 132 to prevent abnormal driving of the first magnet assembly 131 and the second magnet assembly 132 due to the repulsive force It is also possible to prevent the separation of the first magnet assembly 131 and the second magnet assembly 132 from the set rotation path.

Meanwhile, the first sputtering process ( S100 ) or the second sputtering process ( S200 ) may be performed while rotating the second arm 122 and the third arm 123 at different speeds. When the rotation speed of the second rotation body 142 and the rotation speed of the third rotation body 143 are the same, the sputtering target is once every time the second rotation body 142 and the third rotation body 143 rotate once. The first magnet assembly 131 and the second magnet assembly 132 meet at the center of the 30 , and the number of times that a repulsive force is generated between the first magnet assembly 131 and the second magnet assembly 132 increases. do. However, when the rotation speed of the second rotation body 142 and the rotation speed of the third rotation body 143 are different from each other, the first magnet assembly 131 and the second magnet assembly 132 in the center of the sputtering target 30 . ) may be reduced, the number of times that a repulsive force is generated between the first magnet assembly 131 and the second magnet assembly 132 may be reduced, and the first magnet assembly 131 and the second magnet assembly ( It is possible to suppress the abnormal driving of the 132 and the separation of the first magnet assembly 131 and the second magnet assembly 132 from the set rotation path. In addition, since the rotation speed of the second arm 122 and the rotation speed of the third arm 123 are different from each other, the time for the first magnet assembly 131 and the second magnet assembly 132 to be adjacent to each other may be relatively reduced. Relatively, the repulsive force between the first magnet assembly 131 and the second magnet assembly 132 may be reduced.

The sputtering method according to the present invention may further include a step of positioning the first arm 121 and the second arm 122 at a reference position (S50).

The first arm 121 and the second arm 122 may be positioned at a reference position (S50). By positioning the first arm 121 and the second arm 122 at the reference position before the sputtering process, the first magnet assembly 131 and/or the second magnet assembly 132 for each sputtering process (or each of the deposition objects) ) may start the sputtering process at the same rotation starting position (ie, the reference position), and thus the sputtering uniformity between each sputtering process (or each of the deposition objects) may be increased. For example, the reference positions of the first arm 121 and the second arm 122 may be detected through the reference position detection unit 160 , and through this, the first magnet assembly 131 and/or the second magnet assembly may be detected. The rotation start position and rotation end position of the 132 can be checked, and the first magnet assembly 131 and/or the second magnet assembly 132 is rotated when the first magnet assembly 131 and/or the second magnet assembly 132 is positioned at the rotation start position for every sputtering process. It is possible to allow the process to finish at the end location. In addition, a rotation start position and a rotation end position of the first magnet assembly 131 and/or the second magnet assembly 132 may be determined according to the type of the target material. Accordingly, sputtering uniformity between each sputtering process may be increased, and deposition uniformity may be secured regardless of the type of target material.

The sputtering method according to the present invention may further include a step (S40) of determining a rotation path of the first magnet assembly 131 according to a deposition object.

A rotation path of the first magnet assembly 131 may be determined according to the deposition object ( S40 ). The rotation path of the first magnet assembly 131 may be determined according to the deposition object, and the deposition object may be changed according to the purpose of sputtering. That is, the rotation path of the first magnet assembly 131 may be determined according to the purpose of sputtering, and the controller (not shown) controls the rotation path of the first magnet assembly 131 according to the deposition object (or the purpose of sputtering). can decide

For example, when a deposition substrate is used as the deposition object to perform a deposition process on the substrate, the rotational path of the first magnet assembly 131 may be determined as a radial rotational path, and the sputtering target 30 . It is possible to achieve uniform (or high uniformity) sputtering over the entire area of .

Meanwhile, cleaning of the sputtering target 30 may be performed in order to remove contaminants and the like from the surface of the sputtering target 30 . For example, a small first magnet assembly 131 smaller than the sputtering target 30 may have a significant amount of sputtered particles or impurities deposited on the non-sputtered region of the center (part) of the sputtering target 30, and , The material deposited in the center (part) of the sputtering target 30 in this way is not easy to be further sputtered, and by forming a thick film that does not adhere well to the base target and peeling off from the sputtering target 30, in the chamber (not shown) Excessively many particles may be generated, or they may fall on the deposition substrate and act as particles (or contaminants). Due to this, the cleaning of the sputtering target 30 can be performed, and a dummy substrate is provided as the deposition target to remove the sputtered particles or impurities deposited in the center (part) of the sputtering target 30. can

When the dummy substrate is used as the deposition object for cleaning the sputtering target 30, the rotation path (or spiral rotation path) for setting the rotational orbit of the first magnet assembly 131 to the spiral rotational orbit The rotation path of the first magnet assembly 131 may be determined, and the sputtered material (or sputtered particles) or impurities deposited in the center of the sputtering target 30 may be effectively removed by sputtering. In this case, the sputtering material removed by sputtering from the center of the sputtering target 30 may be deposited on the dummy substrate.

Accordingly, the sputtering apparatus 100 of the present invention gives a difference in rotational speed to the outer rotation shaft 111 and the inner rotation shaft 112 through a control unit (not shown) to give the first magnet assembly 131 and/or the second magnet By adjusting (or changing) the rotational trajectory of the assembly 132, the rotational path of the first magnet assembly 131 and/or the second magnet assembly 132 can be set, and the first magnet assembly ( 131) and/or a rotation path of the second magnet assembly 132 may be determined, and sputtering suitable for the deposition object may be performed.

Meanwhile, the sputtering method according to the present invention may further include a step of determining a rotation path of the second magnet assembly 132 according to the deposition object (S45). According to the deposition object, the rotational trajectory of the second magnet assembly 132 may be adjusted in a similar (or the same) manner as that of the first magnet assembly 131 , and the rotational path of the second magnet assembly 132 may be determined.

As described above, in the present invention, by independently controlling the rotations of the outer rotating shaft and the inner rotating shaft, the rotation trajectory of the magnet assembly can be precisely controlled, and thus, deposition uniformity on the deposition object can be improved. In addition, even with a small magnet assembly, the entire area of the sputtering target can be covered, and deposition uniformity can be ensured regardless of the type of target material. And by adjusting the rotational trajectory of the magnet assembly by giving a difference in rotational speed to the outer rotational shaft and the inner rotational shaft, the rotational path of the magnet assembly can be set, the rotational path of the magnet assembly can be determined according to the deposition object, and the deposition object Appropriate sputtering can be achieved. In addition, by temporally bisecting the sputtering process to differently control the rotational speed difference between the outer rotating shaft and the inner rotating shaft, the sputtering process can be carried out by dividing the main regions by the edges and the center of the deposition object in the first half and the second half of the process. Accordingly, the deposition uniformity of the deposition target may be further improved. In addition, the reference position of the first arm and the second arm can be detected through the reference position detection unit, and the rotation start position and rotation end position of the magnet assembly can be confirmed through this, and the magnet assembly is positioned at the rotation start position in each process. When it is done, the process can be started and the process can be finished at the rotation end position. Accordingly, the sputtering uniformity between each process may be increased. On the other hand, two magnet assemblies may be used by adding a second magnet assembly symmetrical to the first magnet assembly, and the deposition rate of the edge of the deposition target, which has been conventionally deposited relatively thinly, may be compensated, and accordingly, the deposition target It is possible to not only improve the deposition uniformity of the film, but also reduce the process time for mainly depositing the edge of the deposition object.

Although preferred embodiments of the present invention have been illustrated and described above, the present invention is not limited to the above-described embodiments, and common knowledge in the field to which the present invention pertains without departing from the gist of the present invention as claimed in the claims It will be understood by those having the above that various modifications and equivalent other embodiments are possible therefrom. Accordingly, the technical protection scope of the present invention should be defined by the following claims.

11: axis of rotation 30: sputtering target
100: sputtering device 105: cover part
111: outer rotating shaft 111a: upper end of the outer rotating shaft
111b: first connection portion 112: inner rotation shaft
112a: second connection portion 121: first arm
122: second arm 123: third arm
125: gear cover 131: first magnet assembly
132: second magnet assembly 131a, 132a: inner magnet part
131b, 132b: external magnet part 131c, 132c: magnetic yoke
131d,132d: first magnetic pole piece 131e,132e: second magnetic pole piece
141: first rotating body 142: second rotating body
142a: central axis of the second rotating body 143: third rotating body
143a: central axis of the third rotating body 151: first magnetic counterweight
152: second magnetic counterweight 155: counterbalance weight
160: reference position detection unit 161: first detection unit
161a: first sensor unit 161b: first movable body
162: second detection unit 162a: second sensor unit
162b: second moving body 171: first driving unit
171a: first motor 171b: first pulley
171c: first belt 172: second driving unit
172a: second motor 172b: second pulley
172c: second belt

Claims (21)

hollow outer rotating shaft;
an inner rotating shaft disposed in the hollow of the outer rotating shaft and rotatable independently of the outer rotating shaft;
a first arm connected to any one of the outer rotating shaft and the inner rotating shaft and rotating about the one rotating shaft by rotation of the one rotating shaft;
a second arm provided on one side of the first arm and rotatable about one side of the first arm by rotation of the other one of the outer rotating shaft and the inner rotating shaft; and
A sputtering device comprising a; a first magnet assembly connected to one side of the second arm. The method according to claim 1,
a first rotating body connected to the other rotating shaft and rotating by rotation of the other rotating shaft; and
A second rotating body connected to the second arm and rotated by the rotational force transmitted from the first rotating body to rotate the second arm. The method according to claim 1,
a first magnetic counterweight connected to the other side of the second arm; and
The sputtering device further comprising a; counterweight connected to the other side of the first arm. 4. The method of claim 3,
The counterweight is a sputtering device having a greater weight than the first magnetic counterweight. The method according to claim 1,
a third arm provided on the other side of the first arm;
a second magnet assembly connected to one side of the third arm;
a first magnetic counterweight connected to the other side of the second arm; and
A sputtering device further comprising a; a second magnetic counterweight connected to the other side of the third arm. 6. The method of claim 5,
The third arm is a sputtering device fixed to the other side of the first arm. 6. The method of claim 5,
A third rotating body connected to the third arm and rotating by the rotational force transmitted from the first rotating body; further comprising,
The third arm is a sputtering device that rotates about the other side of the first arm by the rotation of the third rotating body. The method according to claim 1,
The sputtering apparatus further comprising; a control unit for controlling the rotation of the outer rotation shaft and the inner rotation shaft, respectively. 9. The method of claim 8,
The control unit is a sputtering apparatus for differentiating the rotational speed difference between the outer rotating shaft and the inner rotating shaft by bisecting the process in time. 10. The method of claim 9,
The control unit is
In the first half of the process, the rotational speed of the outer rotating shaft and the inner rotating shaft are equally controlled,
A sputtering apparatus for differently controlling the rotational speeds of the outer rotating shaft and the inner rotating shaft in the second half of the process. 9. The method of claim 8,
The control unit controls the rotational speed of the outer rotation shaft and the inner rotation shaft to change the rotational trajectory of the first magnet assembly sputtering device. 12. The method of claim 11,
The control unit is a sputtering apparatus for determining a rotation path of the first magnet assembly according to the deposition object. 9. The method of claim 8,
The sputtering apparatus further comprising a; a reference position detection unit for detecting the reference position of the first arm and the second arm. 14. The method of claim 13,
The control unit is a sputtering apparatus for positioning the first arm and the second arm at the reference position before the start of the process. A first arm that is connected to any one of the independently rotatable outer and inner rotation shafts and rotates around the one of the rotation shafts, and a first magnet assembly is connected to one side thereof to rotate the outside performing first sputtering while rotating a second arm rotating around one side of the first arm at the same speed by rotation of the other one of the shaft and the inner rotating shaft; and
and performing second sputtering while rotating the first arm and the second arm at different speeds. 16. The method of claim 15,
The second sputtering process is performed by slowing the rotation speed of the second arm than the rotation speed of the first arm. 16. The method of claim 15,
A sputtering method in which a third arm to which a second magnet assembly is connected to one side is provided on the other side of the first arm. 18. The method of claim 17,
The first sputtering process is performed while rotating the first arm and the second arm while the third arm is fixed to the first arm. 18. The method of claim 17,
The first sputtering process or the second sputtering process is a sputtering method performed by making the rotation start positions of the first magnet assembly and the second magnet assembly different. 16. The method of claim 15,
The sputtering method further comprising; positioning the first arm and the second arm at a reference position. 16. The method of claim 15,
The sputtering method further comprising a; determining a rotation path of the first magnet assembly according to the deposition object.

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