KR20220096899A - Liquid crystal panel - Google Patents

Abstract

In accordance with an embodiment of the present invention, a liquid crystal display panel manufacturing method includes the following steps of: forming a transistor on a third substrate including a silicon component of first density and provided with a fifth thickness; forming a color filter on a fourth substrate including a silicon component of second density relatively smaller than the first density and provided with the fifth thickness; forming a laminated substrate by laminating the third substrate with the fourth substrate; providing a chemical fluid onto the laminated substrate for a chemical fluid exposure time; and forming a first substrate having a first thickness by removing the third thickness from the third substrate through control on the chemical fluid exposure time, and forming a second substrate having a second thickness by removing the fourth thickness from the fourth substrate. Accordingly, the first thickness of the first substrate can be 1.3 to 1.7 times greater than the second thickness of the second substrate. Therefore, the present invention is capable of minimizing the damage defect from a pad part.

Description

Liquid crystal panel {Liquid crystal panel}

The present invention relates to a liquid crystal display panel, and more particularly, to a liquid crystal display panel capable of minimizing damage to a pad portion of a liquid crystal display device by making an array substrate thicker than a color filter substrate.

The liquid crystal display device occupies a very large portion in information display technology. A liquid crystal display device displays information by inserting a liquid crystal between both glass substrates, injecting power through electrodes located above and below the glass substrate, and converting it in each liquid crystal to emit light.

A general liquid crystal display device includes a liquid crystal display panel in which an array substrate and a color filter substrate are bonded, and a pad unit for supplying power is disposed on the array substrate. Accordingly, the array substrate may be formed to be larger than the color filter substrate, and the pad portion may be disposed in the larger portion.

The liquid crystal display panel performs a process of chemically etching the color filter substrate and the array substrate to reduce the cell thickness in which the color filter substrate and the array substrate are bonded.

Here, the color filter substrate and the array substrate use the same chemical solution, and since the substrate of the same component is used, the color filter substrate and the array substrate have the same thickness.

Chemical etching performed as a part of reducing the cell thickness causes damage to the pad portion exposed as a single plate as the cell thickness of the liquid crystal display panel becomes thinner.

In other words, the pad portion of the liquid crystal display panel is a region exposed from the color filter substrate and formed as a single plate of the array substrate, and thus has a structure inevitably vulnerable to damage due to its thin thickness.

The present invention applies a glass having a different etch rate to the first substrate on which the transistor is formed and the second substrate on which the color filter is formed. After etching, the thickness of the first substrate on which the transistor is formed is thicker than the second substrate on which the color filter is formed. To provide a liquid crystal display panel that minimizes damage to the pad part.

A method of manufacturing a liquid crystal display panel according to an embodiment of the present invention includes: forming a transistor on a third substrate including a silicon component having a first density and having a fifth thickness; Forming a color filter on a fourth substrate including a silicon component having a density and having a fifth thickness, bonding the third substrate and the fourth substrate to form a bonded substrate, and a chemical solution on the bonding substrate providing a chemical solution for an exposure time and controlling the exposure time of the chemical solution to form a first substrate having a first thickness by removing a third thickness from the third substrate, and removing a fourth thickness from the fourth substrate and forming a second substrate having a second thickness.

Here, the first thickness of the first substrate may be 1.3 to 1.7 times the second thickness of the second substrate.

In the step of providing the chemical solution to the third substrate and the fourth substrate for the same time period, the chemical solution may be a step of forming a first etch removal region to remove one surface of the third substrate to the third thickness. .

In the step of providing a chemical solution to the third substrate and the fourth substrate for the same chemical exposure time, forming a second etch removal region in which the chemical solution removes one surface of the fourth substrate to the fourth thickness can

The fourth thickness may be in a range of 1.3 to 1.7 times the third thickness.

The exposure time of the chemical solution provided to the third substrate and the fourth substrate may be in the range of 80 min to 120 min, and the same exposure time may be provided to the third substrate and the fourth substrate.

The chemical may be a mixture of hydrofluoric acid and nitric acid.

The silicon component of the first density of the third substrate may be in the range of 60% by weight to 70% by weight.

The silicon component of the second density of the fourth substrate may be in the range of 70% by weight to 75% by weight.

A second thickness of the second substrate may be formed in a range of 100 μm to 250 μm, and a first thickness of the first substrate may be formed in a range of 150 μm to 300 μm.

The fifth thickness may be in the range of 300um to 800um.

The bonding substrate may include a bonding region in which the third substrate and the fourth substrate overlap each other, and an open region formed by exposing the third substrate from the fourth substrate, and a pad portion may be formed on the open region. have,

A first substrate having a first thickness is formed by removing a third thickness of the third substrate by controlling the chemical exposure time, and a second substrate having a second thickness is formed by removing the fourth thickness of the fourth substrate. In the forming, a difference in thickness between the bonding region and the open region may be minimized.

In a liquid crystal display panel according to an embodiment of the present invention, a transistor is disposed, a first substrate including a silicon component of a first density, a first substrate having a first thickness, and a color filter are disposed, a second density of a silicon component is disposed, and a second A second substrate having a thickness may be included.

Here, the silicon component of the first density is formed in a range of 65% to 70% by weight, the silicon component of the second density is formed in a range of 70% by content to 75% by weight, and the first thickness is the second thickness. It may be 1.3 times to 1.7 times of

It may include a bonding region in which the first substrate and the second substrate overlap each other, and an open region formed by exposing the first substrate from the second substrate, and a pad portion may be formed on the open region.

The first substrate and the second substrate may minimize a difference in thickness between the bonding region and the open region.

The details of other embodiments are included in the detailed description and drawings.

In the liquid crystal display panel according to the embodiment of the present invention, a type of glass having a different etch rate with respect to the same chemical solution is applied to the first substrate on which the transistor is formed and the second substrate on which the color filter is formed. By forming the thickness of the first substrate on which the transistor is formed to be thick, it is possible to minimize the failure of the pad part.

In addition, the liquid crystal display panel according to the embodiment of the present invention minimizes the difference in thickness between the bonding region where the first substrate and the second substrate are bonded and the open region where the pad part is formed, so that the impact applied by an external force is relatively thin. It is possible to minimize the occurrence of defects that are transmitted to the part and the pad part is damaged.

The effect according to the present invention is not limited by the contents exemplified above, and more various effects are included in the present specification.

1 is a plan view of a liquid crystal display panel according to an embodiment of the present invention.
FIG. 2 is a perspective view of area “A” of FIG. 1 .
3 is a cross-sectional view comparing the substrate thickness of the liquid crystal display panel according to the embodiment of the present invention and the substrate thickness of the conventional liquid crystal display panel.
4 is a cross-sectional view illustrating a manufacturing process of a liquid crystal display panel according to an embodiment of the present invention.
5 is a schematic diagram schematically illustrating an etching mechanism of a liquid crystal display panel according to an embodiment of the present invention.
6 is a diagram illustrating a molecular structure of a silicon component constituting a substrate of a liquid crystal display panel according to an embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. Like reference numerals refer to substantially identical elements throughout. In the following description, if it is determined that a detailed description of a known technology or configuration related to the present invention may unnecessarily obscure the subject matter of the present invention, the detailed description thereof will be omitted. In describing various embodiments, the same components are representatively described in the introduction and may be omitted in other embodiments.

Terms including an ordinal number such as 1st, 2nd, etc. may be used to describe various elements, but the elements are not limited by the terms. The above terms are used only for the purpose of distinguishing one component from another.

Each feature of the various embodiments of the present specification may be partially or wholly combined or combined with each other, technically various interlocking and driving are possible, and each embodiment may be independently implemented with respect to each other or may be implemented together in a related relationship. may be

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a plan view of a liquid crystal display panel according to an embodiment of the present invention, FIG. 2 is a perspective view of area “A” of FIG. 1, and FIG. 3 is a substrate thickness of a liquid crystal display panel according to an embodiment of the present invention and a conventional These are cross-sectional views comparing the substrate thickness of the liquid crystal display panel.

1 to 3 , in the liquid crystal display panel 10 according to the embodiment of the present invention, a first substrate 100 on which transistors are disposed, including a silicon component of a first density, and having a first thickness D1 . and a second substrate 200 on which a color filter is disposed and includes a silicon component having a second density and having a second thickness D2.

Here, the first thickness D1 may be 1.3 to 1.7 times the second thickness D2. In other words, the first thickness D1 of the first substrate 100 may be 1.3 to 1.7 times thicker than the second thickness D2 of the second substrate 200 . In addition, the first substrate 100 may be formed to be larger than the second substrate 200 , and may include a pad part PDA exposed from the second substrate 200 .

The first substrate 100 and the second substrate 200 may be formed of a glass-based material including silicon dioxide.

When the liquid crystal display panel 10 is schematically described, a transistor may be disposed on the first substrate 100 . The transistor may include a gate electrode disposed on the first substrate 100 , a gate insulating layer disposed on the gate electrode, a semiconductor layer disposed on the gate insulating layer, and source/drain electrodes disposed on the semiconductor layer. can In addition, a pixel electrode connected to any one of the source/drain electrodes may be included.

The pixel electrode of the transistor formed as described above forms an electric field with the common electrode formed on the first substrate 100 or the second substrate 200 to be disposed between the first substrate 100 and the second substrate 200 . An image can be displayed by turning on/off the liquid crystal of the liquid crystal layer.

In addition, a color filter may be disposed on the second substrate. The color filter selectively transmits light to express color.

As described above, the liquid crystal layer is interposed between the color filter and the substrate on which the transistor is formed, and the first substrate 100 and the second substrate 200 are bonded to each other to form the liquid crystal display panel 10 . Accordingly, in the liquid crystal display panel 10 , the bonding area HA in which the first substrate 100 and the second substrate 200 are bonded is formed, and the pad part PDA is an open area open from the second substrate 200 . (OPA) may be formed.

The first substrate 100 includes a silicon component having a first density. And the second substrate 200 includes a silicon component having a second density. Here, the first density and the second density are defined as different densities. Specifically, the first density is a relatively higher density than the second density.

Specifically, the silicon component of the first density contained on the first substrate 100 is formed in the range of 65 content% to 70 content%, and the silicon component of the second density contained on the first substrate 100 . Silver may be formed in the range of 70 content % to 75 content %.

Since the silicon component has different reactivity to a chemical solution, which will be described later, the slimming rate of the first substrate 100 and the second substrate 200 may be controlled. That is, the difference in the density of the silicon component causes a difference in the slimming rate, so that the first substrate 100 and the second thickness of the first thickness D1 of the liquid crystal display panel 10 according to the embodiment of the present invention. The second substrate 200 of (D2) may be formed. Here, the first substrate 100 having the first thickness D1 may be formed to be 1.3 times to 1.7 times thicker than the second substrate 200 having the second thickness D2.

On the other hand, as shown in (a) of FIG. 3 , conventionally, the first substrate 100-1 and the second substrate 200-1 having the same component were used. Here, when the same chemical solution is used in the process performed to reduce the cell thickness of the conventional liquid crystal display panel 10-1, the first substrate 100-1 and the second substrate 200-1 of the same component are etched. The thicknesses used become the same, and finally, the first substrate 100-1 and the second substrate 200-1 are formed to have the same thickness Q1.

Here, in the case of the first substrate 100-1, since the pad part PDA is provided, the first substrate 100 and the second substrate 200 are bonded together on the open area OPA where the pad part PDA is formed. Since it is relatively thinner than the area HA, a defect may occur even when an impact is applied by a small external force.

However, as shown in FIG. 3B , the liquid crystal display panel 10 according to the embodiment of the present invention has the first substrate 100 formed to be relatively thicker than the second substrate 200 . A thickness difference between the bonding area HA in which the substrate 100 and the second substrate 200 are bonded and the open area OPA in which the pad part PDA is formed may be minimized. Accordingly, it is possible to minimize the occurrence of a defect in which an impact applied by an external force is transmitted to the pad part PDA having a relatively thin thickness, and the pad part PDA is damaged.

As described above, in the liquid crystal display panel 10 according to the embodiment of the present invention, a type of glass having a different etching rate with respect to the same chemical solution is applied to the first substrate 100 on which the transistor is formed and the second substrate 200 on which the color filter is formed. By applying this, the thickness of the first substrate 100 on which the transistor is formed is thicker than that of the second substrate 200 on which the color filter is formed after etching, thereby minimizing damage to the pad part PDA.

In addition, the liquid crystal display panel 10 according to the embodiment of the present invention has a bonding area HC in which the first substrate 100 and the second substrate 200 are bonded and an open area OPA in which the pad part PDA is formed. By minimizing the thickness difference in the , an impact applied by an external force is transmitted to the pad part PDA having a relatively thin thickness, thereby minimizing the occurrence of a defect in which the pad part PDA is damaged.

4 is a cross-sectional view illustrating a manufacturing process of a liquid crystal display panel according to an embodiment of the present invention, and FIG. 5 is a schematic diagram schematically illustrating an etching mechanism of the liquid crystal display panel according to an embodiment of the present invention. 6 is a view showing a molecular structure of a silicon component constituting a substrate of a liquid crystal display panel according to an embodiment of the present invention.

4 to 6 will be described with reference to FIGS. 1 to 3 to avoid overlapping description and for easy explanation.

4 to 6 , in the method of manufacturing the liquid crystal display panel 10 according to an embodiment of the present invention, the third substrate 300 including the silicon component of the first density and provided with the fifth thickness D5 is Forming a transistor on the substrate, forming a color filter on the fourth substrate 400 including a silicon component having a second density that is relatively less than the first density and having a fifth thickness D5, the third substrate The step of bonding 300 and the fourth substrate 400 to form a cemented substrate 10a, providing a chemical solution (LFN) on the cemented substrate 10a for an exposure time of the chemical solution (LFN), and a third substrate ( The third thickness D3 of 300 is removed to form the first substrate 100 having the first thickness D1, and the fourth thickness D4 of the fourth substrate 400 is removed to form a second thickness ( and forming a second substrate 200 having D2).

Here, the first thickness D1 of the first substrate 100 may be 1.3 to 1.7 times the second thickness D2 of the second substrate 200 . In other words, the first thickness D1 of the first substrate 100 may be 1.3 to 1.7 times thicker than the second thickness D2 of the second substrate 200 .

A step of forming a transistor on the third substrate 300 including the silicon component of the first density and having a fifth thickness D5 is performed. As described above, a plurality of transistors are formed on the third substrate 300 .

In addition, a step of forming a color filter on the fourth substrate 400 including a silicon component having a second density that is relatively less than the first density and having a fifth thickness D5 is performed. As described above, a color filter that transmits a specific wavelength is formed on the fourth substrate 400 .

Here, the third substrate 300 and the fourth substrate 400 may be provided to have the same thickness as the fifth thickness D5 . In other words, when the third substrate 300 and the fourth substrate 400 are provided with different thicknesses, the slimming rate can be controlled, but the first substrate 100 and the second substrate finally formed It can be difficult to control the thickness ratio of (200).

And, the fifth thickness D5 may be in the range of 300um to 800um. When the fifth thickness (D5) is less than 300um, the thickness of the substrate is thin and it is difficult to control the slimming rate, and when the fifth thickness (D5) is more than 800um, the chemical exposure time to be carried out later becomes longer and the process time is reduced can increase

Meanwhile, the silicon component of the first density and the silicon component of the second density will be described later.

A bonded substrate 10a may be formed by bonding the third substrate 300 and the fourth substrate 400 to each other. Here, in the bonding substrate 10a, a liquid crystal layer (not shown) may be interposed between the third substrate 300 and the fourth substrate 400 . The bonding substrate 10a includes a bonding area HA in which the third substrate 300 and the fourth substrate 400 are overlapped, and an open area formed by exposing the third substrate 300 from the fourth substrate 400 . (OPA) may be included. A pad part PDA may be disposed on the open area OPA. Accordingly, the thickness of the bonding area HA of the bonding substrate 10a may be approximately twice that of the open area OPA.

The step of providing the chemical solution LFN on the bonding substrate 10a during the exposure time of the chemical solution is performed. As the chemical solution (LFN), a mixture of hydrofluoric acid (HF) and nitric acid (HNO) may be used.

5 and 6 , the reaction mechanism between the chemical liquid LFN and the substrates (the third substrate 300 and the fourth substrate 400 ) may be defined by the following equation.

[Formula 1]

H₂(SiF₆) + 2H₂O+ ESiO ₂ + 6HF

H ₂ (SiF ₆ ) + 2H ₂ O+ E

Here, E may be defined as thermal energy generated by a reaction between the substrates (the third substrate 300 and the fourth substrate 400 ) and the chemical liquid LFN.

The slimming of the substrates (the third substrate 300 and the fourth substrate 400 ) may be performed by a reaction between silicon dioxide (SiO ₂ ), hydrofluoric acid (HF), nitric acid (HNO), and a mixture thereof. Here, hydrofluoric acid (HF) will be described as an example. Si-O- of the substrates (the third substrate 300 and the fourth substrate 400) according to the reaction of the chemical liquid (LFN) in contact with the surfaces of the substrates (the third substrate 300 and the fourth substrate 400) By breaking the network structure of Si and releasing the constituent molecules from the bulk substrates (the third substrate 300 and the fourth substrate 400), the substrate (the third substrate 300 and the fourth substrate 400) ) can be implemented.

Therefore, in the configuration of the substrates (the third substrate 300 and the fourth substrate 400 ), a large amount of silicon dioxide (SiO ₂ ) may mean a large amount of Si-O-Si network structure. That is, since the time for breaking the network structure of Si-O-Si per unit chemical solution (LFN) exposure time is fixed, it means that the time required for breaking the network structure of Si-O-Si becomes longer.

Therefore, the third substrate 300 including the silicon dioxide (SiO ₂ ) component at a first density, and the fourth substrate 400 including the silicon dioxide (SiO ₂ ) component having a second density that is relatively smaller than the first density. ) to the chemical solution (LFN) for the same time, the degree of etching can be formed differently. Accordingly, the same chemical solution (LFN) exposure time is provided to the third substrate 300 and the fourth substrate 400 to obtain substrates (the third substrate 300 and the fourth substrate 400) having a constant thickness through the etching process. should be

Here, the exposure time of the chemical solution (LFN) may be in the range of 80 min to 120 min. When the chemical exposure time is less than 80 min, the reaction time is small, so it is difficult to generate a thickness difference between the third substrate 300 and the fourth substrate 400, and when the chemical exposure time is more than 120 min, the chemical solution (LFN) exposure time This lengthening may increase the tact time (Tact tome), thereby reducing productivity.

For example, as shown in FIG. 4B , a first etch removal region ED1 having a third thickness D3 is formed on the surface of the third substrate 300 containing a large amount of silicon dioxide. and a second etch removal region ED2 having a third thickness D3 may be formed on the surface of the fourth substrate 400 containing less silicon dioxide. Here, the fourth thickness D4 formed as the second etch removal region ED2 may be formed in a range of 1.3 to 1.7 times the third thickness D3 at which the first etch removal region ED1 is formed.

As described above, the first substrate 100 may be formed by removing the third thickness D3 that is the first etch-removed region ED1 from the third substrate 300 . In addition, the second substrate 200 may be formed by removing the fourth thickness D4 that is the second etch removal region ED2 from the fourth substrate 400 .

Accordingly, the first thickness D1 of the first substrate 100 may be 1.3 to 1.7 times the second thickness D2 of the second substrate 200 . The second thickness D2 of the second substrate 200 may be formed in a range of 100 μm to 250 μm, and the first thickness D1 of the first substrate 100 may be formed in a range of 150 μm to 300 μm. Accordingly, as the first thickness D1 of the first substrate 100 is thicker than the second thickness D2 of the second substrate 200, the thickness difference between the bonding area HA and the open area OPA is minimized. can do it

As described above, in the method of manufacturing the liquid crystal display panel 10 according to the embodiment of the present invention, the etching rate is different for the same chemical solution on the first substrate 100 on which the transistor is formed and the second substrate 200 on which the color filter is formed. By applying the glass of , the thickness of the first substrate 100 on which the transistor is formed is thicker than that of the second substrate 200 on which the color filter is formed after etching, so that the failure of the pad part PDA can be minimized.

In addition, in the method of manufacturing the liquid crystal display panel 10 according to the embodiment of the present invention, the bonding area HC in which the first substrate 100 and the second substrate 200 are bonded and the open area in which the pad part PDA is formed. By minimizing the thickness difference in the OPA, an impact applied by an external force is transmitted to the pad part PDA having a relatively thin thickness, thereby minimizing the occurrence of a defect in which the pad part PDA is damaged.

Those skilled in the art through the above description will be able to make various changes and modifications without departing from the technical spirit of the present invention. Accordingly, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification, but should be defined by the claims.

10: liquid crystal display panel 100: first substrate
200: second substrate 300: third substrate
400: fourth substrate ED1: first etch removal region
ED2: second etch removal area OPA: open area
HC: Adhesion region LFN: Chemical solution

Claims (15)

forming a transistor on a third substrate including a silicon component having a first density and having a fifth thickness;
forming a color filter on a fourth substrate including a silicon component having a second density that is relatively less than the first density and having a fifth thickness;
bonding the third substrate and the fourth substrate to form a bonded substrate;
providing a chemical solution for an exposure time of the chemical solution on the bonding substrate; and
A first substrate having a first thickness is formed by removing a third thickness from the third substrate by controlling the exposure time to the chemical, and a second substrate having a second thickness is formed by removing a fourth thickness from the fourth substrate. Forming; including,
The first thickness of the first substrate is 1.3 to 1.7 times the second thickness of the second substrate.
According to claim 1,
In the step of providing a chemical solution to the third substrate and the fourth substrate for the same time,
and forming a first etch removal region in which the chemical solution removes one surface of the third substrate to the third thickness.
According to claim 1,
In the step of providing a chemical solution to the third substrate and the fourth substrate for the same exposure time to the chemical,
and forming a second etch removal region in which the chemical solution removes one surface of the fourth substrate to the fourth thickness.
According to claim 1,
The fourth thickness is in the range of 1.3 to 1.7 times the third thickness.
According to claim 1,
The exposure time of the chemical solution provided to the third and fourth substrates ranges from 80 min to 120 min, and the same exposure time is provided to the third and fourth substrates.
According to claim 1,
The method of manufacturing a liquid crystal display panel, characterized in that the chemical is a mixture of hydrofluoric acid and nitric acid.
According to claim 1,
The method of manufacturing a liquid crystal display panel, characterized in that the silicon component of the first density of the third substrate is in the range of 65 content % to 70 content %.
According to claim 1,
The method of manufacturing a liquid crystal display panel, characterized in that the silicon component of the second density of the fourth substrate is in the range of 70% by content to 75% by content.
According to claim 1,
The second substrate has a second thickness in the range of 100um to 250um,
A method of manufacturing a liquid crystal display panel, characterized in that the first thickness of the first substrate is formed in the range of 150um to 300um.
According to claim 1,
The fifth thickness is a method of manufacturing a liquid crystal display panel, characterized in that in the range of 300um to 800um.
According to claim 1,
The bonding substrate is
a bonding region in which the third substrate and the fourth substrate overlap each other;
and an open region formed by exposing a third substrate from the fourth substrate;
A method of manufacturing a liquid crystal display panel in which a pad part is formed on the open area.
12. The method of claim 11,
A first substrate having a first thickness is formed by removing a third thickness of the third substrate by controlling the exposure time to the chemical, and a second substrate having a second thickness is formed by removing the fourth thickness of the fourth substrate. The forming step is
A method of manufacturing a liquid crystal display panel, characterized in that the difference in thickness between the bonding region and the open region is minimized.
a first substrate having a first thickness and comprising a silicon component of a first density on which the transistor is disposed; and
a second substrate on which the color filter is disposed, the second substrate including a silicon component of a second density and having a second thickness; including,
The silicon component of the first density is formed in the range of 65% by weight to 70% by weight,
The silicon component of the second density is formed in the range of 70% by weight to 75% by weight,
The first thickness of the liquid crystal display panel, characterized in that 1.3 times to 1.7 times the second thickness.
14. The method of claim 13,
a bonding region in which the first substrate and the second substrate overlap each other;
and an open region formed by exposing the first substrate from the second substrate;
A liquid crystal display panel in which a pad part is formed on the open area.
15. The method of claim 14,
The first substrate and the second substrate minimize a thickness difference between the bonding region and the open region.

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