KR20220095497A - Unit for supporting substrate and method for manufacturing thereof - Google Patents

Abstract

A substrate support unit comprises: a seating part on which a substrate is placed; a support part with an end extending from the seating part and formed to be stepped downward; and a focusing ring including a lower ring provided to face a stepped portion at the end of the support part and an upper ring provided on an upper portion of the lower ring and having an inclined portion facing a side surface of the substrate when surrounding the substrate placed on the support part. In particular, a first suction hole for sucking air when the support part and the lower ring are coupled is formed in the stepped portion. A second suction hole for sucking air when the lower ring and the upper ring are coupled is formed in the lower ring. The support part and the lower ring, and the lower ring and the upper ring may be coupled to have a bonding structure. According to the present invention, it is possible to provide a substrate support unit with a focusing ring that is relatively advantageous in terms of cost.

Description

Substrate support unit and manufacturing method thereof

The present invention relates to a substrate support unit and a method for manufacturing the same. More particularly, the present invention relates to a substrate support unit including a support portion provided to place a substrate and a focus ring provided to surround the support portion, and a method of manufacturing the same.

An integrated circuit device such as a semiconductor device may be generally manufactured using a substrate processing apparatus including various process chambers such as a deposition chamber, a sputtering chamber, an etching chamber, a cleaning chamber, a drying chamber, and the like.

In addition, components constituting the process chambers may be damaged while various processes are performed. As an example of the damaged components, it is disposed in a process chamber in which a plasma etching process is performed to focus plasma generated from a process gas onto a substrate. and a focus ring.

Accordingly, although the aforementioned focus ring needs periodic replacement, since it is made of an expensive material such as silicon carbide, there may be a disadvantage in terms of cost.

An object of the present invention is to provide a substrate support unit having a focus ring, which is relatively advantageous in terms of cost.

Another object of the present invention is to provide a method of manufacturing a substrate support unit having a focus ring, which is relatively advantageous in terms of cost.

A substrate support unit on which a substrate is placed according to exemplary embodiments for achieving the object of the present invention includes a seating portion on which the substrate is placed, and an end extending from the seating portion is provided to be stepped downward, and the A lower ring provided to face the step portion at the end of the support portion, and an upper ring provided on the lower ring and facing the side surface of the substrate when enclosing the substrate placed on the support portion is inclined A focus ring may be included, and in particular, a first suction hole for sucking air when the support part and the lower ring are coupled is formed in the step portion, and the lower ring sucks air when the lower ring and the upper ring are coupled. A second suction hole is formed for the , and the support and the lower ring, and the lower ring and the upper ring may be coupled to have a bonding structure.

In example embodiments, the support part may be an electrostatic chuck provided to adsorb the substrate by an electrostatic force.

In example embodiments, the lower ring may be made of silicon, the upper ring may be made of silicon, silicon carbide, or a mixture thereof, and the bonding structure may be formed by using a heat transfer silicon pad.

In example embodiments, the first suction holes may be formed at three locations at intervals of 120°.

In exemplary embodiments, a groove is formed in a portion of the upper ring facing the lower ring, and a bonding material for bonding is filled in the groove to protrude from the groove, and the upper ring and the lower ring are It may be provided to have a structure coupled by the bonding material through the air suction in the second suction hole.

In the method of manufacturing a substrate support unit according to exemplary embodiments for achieving the other object of the present invention, there is a seating portion on which a substrate is placed, and an end extending from the seating portion is stepped downward and the step portion has air A step of providing a support portion provided with a first suction hole for suction, and preparing a lower ring having a second suction hole for air suction while being in contact with a stepped portion at an end of the support portion; The step of providing an upper ring provided so that a groove is formed in a portion that is in contact with the lower ring as well as in contact with the lower ring, and applying a bonding material to the stepped portion and/or the lower ring and the stepped portion and coupling the support part and the lower ring through air suction in the first suction hole after the lower ring is interviewed, and filling the groove of the upper ring with a bonding material to protrude, and the lower part After the ring and the upper ring are interviewed, the lower ring is coupled to the upper ring through air suction in the first suction hole and the second suction hole.

In example embodiments, the lower ring may be made of silicon, and the upper ring may be made of silicon, silicon carbide, or a mixture thereof.

In example embodiments, the bonding material may be a heat transfer silicon pad.

In exemplary embodiments, the first suction holes may be formed in three places at intervals of 120°.

A substrate support unit and a method for manufacturing the same according to exemplary embodiments of the present invention divide the focus ring into an upper ring and a lower ring, and select a relatively inexpensive material for the upper ring and/or the lower ring in terms of cost. Since it can be manufactured, the advantage of lowering the manufacturing cost in terms of equipment can be expected.

Accordingly, the substrate support unit and the method for manufacturing the same according to the exemplary embodiments of the present invention can lower the manufacturing cost in terms of device, so that the price competitiveness of the manufacturing apparatus for manufacturing an integrated circuit device such as a semiconductor device. can be expected to secure the effect.

However, the effects of the present invention are not limited to the above-mentioned effects, and may be variously expanded without departing from the spirit and scope of the present invention.

1 is a schematic diagram for explaining a substrate processing apparatus provided with a substrate support unit according to exemplary embodiments of the present invention.
2 is a schematic diagram illustrating a process chamber in a substrate processing apparatus provided with a substrate support unit according to exemplary embodiments of the present invention.
3 and 4 are schematic views for explaining a substrate support unit according to exemplary embodiments of the present invention.

Since the present invention may have various changes and may have various forms, embodiments will be described in detail in the text. However, this is not intended to limit the present invention to the specific disclosed form, it should be understood to include all modifications, equivalents and substitutes included in the spirit and scope of the present invention. In describing each figure, like reference numerals have been used for like elements. Terms such as first, second, etc. may be used to describe various elements, but the elements should not be limited by the terms. The above terms are used only for the purpose of distinguishing one component from another. The terms used in the present application are only used to describe specific embodiments, and are not intended to limit the present invention. The singular expression includes the plural expression unless the context clearly dictates otherwise. In the present application, terms such as "comprises" or "consisting of" are intended to designate that a feature, number, step, operation, component, part, or combination thereof described in the specification exists, but one or more other features It is to be understood that this does not preclude the possibility of addition or existence of numbers, steps, operations, components, parts, or combinations thereof.

Unless defined otherwise, all terms used herein, including technical and scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with the meaning in the context of the related art, and should not be interpreted in an ideal or excessively formal meaning unless explicitly defined in the present application. does not

In addition, exemplary embodiments will be described in more detail with reference to the accompanying drawings. The same reference numerals are used for the same components in the drawings, and duplicate descriptions of the same components are omitted.

1 is a schematic diagram for explaining a substrate processing apparatus provided with a substrate support unit according to exemplary embodiments of the present invention.

Referring to FIG. 1 , a substrate processing apparatus according to exemplary embodiments of the present invention may include an index module 10 and a processing module 20 , and the processing module 20 includes a load lock module 30 . ) and a process module 40 .

The index module 10 may include a load port 50 and a transfer frame 60 , and the load port 50 may have a cassette 70 capable of accommodating a plurality of substrates therein.

For example, the cassette 70 may include a Front Opening Unified Pod (FOUP), and the index module 10 may include a plurality of load ports 50 .

The index module 10 may include a carrier storage unit 80 , but the carrier storage unit 80 may have a structure similar to that of the cassette 70 .

The carrier storage unit 80 may be disposed adjacent to the load port 50 , and optionally, the position of the carrier storage unit 80 may be changed according to the configuration of the substrate processing apparatus.

The transfer frame 60 may transfer the substrate between the cassette 70 accommodated in the load port 50 and the load lock module 30 , and the transfer frame 60 includes an index rail 90 and an index robot. (100) may be provided.

Accordingly, the index robot 100 may move along the index rail 90 , and may transfer a substrate between the cassette 70 and the load lock module 30 .

In addition, the index robot 100 may include an index robot base 105 , a body 110 , an index robot arm 115 , and an index hand 120 .

The index robot base 105 may move on the index rail 90 , the body 110 may be coupled to the index robot base 105 , and move together with the index robot base 105 .

The body 110 may rotate on the index robot base 105 , and the index robot arm 115 may be coupled to the body 110 , and may freely move or rotate on the body 110 .

The index robot 100 may include a plurality of index robot arms 115 operable individually, some of the plurality of index robot arms 115 transferring a substrate from the process module 40 to the cassette 70 . Another portion of the plurality of index robot arms 115 may transfer the substrate from the cassette 70 to the process module 40 .

The load lock module 30 may be disposed between the transfer frame 60 and the transfer unit 150 , and the load lock module 30 accommodates a substrate transferred between the transfer unit 150 and the transfer frame 60 . It can give you space to do it.

The load lock module 30 may maintain the vacuum pressure in the index module 10 substantially the same as that of the process module 40 while transferring the substrate from the index module 10 into the process module 40 , and also The load lock module 30 may maintain the pressure in the process module 40 substantially the same as that of the index module 10 while transferring the substrate from the process module 40 to the index module 10 .

The load lock module 30 may include a load lock chamber 130 and an unload lock chamber 135 . A substrate transferred from the index module 10 into the process module 40 is temporarily stored in the load lock chamber 130 . may be accommodated, and the substrate transferred from the process module 40 into the index module 10 may be temporarily accommodated in the unload lock chamber 135 .

The process module 40 may include a transfer unit 150 and a plurality of process chambers 180 .

The transfer unit 150 may transfer the substrate between the load lock chamber 130 , the unload lock chamber 135 and the process chambers 180 , and may include a transfer chamber 155 and a transfer robot 160 . can

A load lock chamber 130 , an unload lock chamber 135 , and the plurality of process chambers 180 may be disposed around the transfer chamber 155 , and a transfer space 165 accommodating a substrate may be provided. .

The transfer robot 160 may be disposed in the transfer space 165 , and may transfer a substrate between the load lock chamber 130 , the unload lock chamber 135 and the process chambers 180 , and transfer the substrate. In order to do this, a transfer robot arm 170 and a transfer hand 175 may be provided. Alternatively, the transfer robot 160 may include a plurality of transfer robot arms 170 and a plurality of transfer hands 175 . .

The substrate processing apparatus according to the exemplary embodiments of the present invention may include a plurality of process chambers 180 , and although not limited thereto, the process chambers 180 may include an etch chamber, a deposition chamber, a cleaning chamber, and a drying chamber. It may include a chamber, a coating chamber, a developing chamber, an exposure chamber, and the like, and in the process chambers 180 , desired processes including a deposition process, an etching process, a cleaning process, a coating process, a developing process, and/or an exposure process are performed. can be performed on the substrate.

2 is a schematic diagram illustrating a process chamber in a substrate processing apparatus provided with a substrate support unit according to exemplary embodiments of the present invention.

Referring to FIG. 2 , a process chamber 180 in a substrate processing apparatus according to exemplary embodiments of the present invention may be formed of a plasma etching chamber or the like.

Accordingly, the aforementioned process chamber 180 includes a housing 200 , a substrate support unit (hereinafter, referred to as a 'support unit') 300 , a gas supply unit 400 , a plasma generation unit 500 , and an exhaust unit ( 600) and the like.

The housing 200 may provide a process space 205 in which a desired process such as an etching process may be performed on the substrate W therein, and the housing 200 may have a substantially cylindrical shape. , may be made of a metal such as aluminum.

And an opening for loading and unloading the substrate W may be provided at one side of the housing 200, and this opening may be opened or closed by the door 210, and a hole ( 220 may be provided, the hole 220 of the housing 200 may be connected to a vacuum member (not shown), and the process space 205 may be maintained substantially in a vacuum by the vacuum member.

The support unit 300 may be disposed in the process space 205 of the housing 200 , and for example, the support unit 300 is performed to form a desired structure including patterns on the substrate W. It is possible to support the substrate W during the plasma etching process.

In the process chamber 180 according to the exemplary embodiments of the present invention, the support unit 300 may include an electrostatic chuck capable of supporting the substrate W using an electrostatic force. 300 may support the substrate W in the same manner as clamping.

In example embodiments, when the support unit 300 includes an electrostatic chuck, the support unit 300 includes a support 305 , an internal electrode 310 , a heater 315 , a base 320 , and a cooling passage ( 325), a focus ring 350, and the like may be provided.

The support part 305 may be provided to have a structure in which a seating part on which the substrate W is placed and an end extending from the seating part are stepped downward as shown in FIG. 3 to be described later.

In addition, the support 305 may be made of a dielectric material to provide electrostatic force, and may have a substantially circular plate shape.

The support 305 may have substantially the same diameter as the substrate W or may have a smaller diameter than the substrate W, and the size of the support 305 may vary depending on the size of the substrate W. .

The internal electrode 310 may be disposed in the support 305 . Power may be applied to the internal electrode 310 from a power source (not shown), and thus an electrostatic force may be generated between the substrate W and the support part 305 .

In addition, a heater 315 capable of heating the substrate W may be mounted in the support 305 , and the heater 315 may be disposed under the internal electrode 310 , for example, a spiral coil. may include

The base 320 may be coupled to the support 305 , and may support the support 305 , wherein a central portion of the base 320 may be substantially higher than a periphery of the base 320 , in this case the base 320 . ) of the central portion may have substantially the same size as the size of the support portion 305, and may be made of metal.

The cooling passage 325 may be installed in the base 320 , and may provide a passage through which a cooling fluid may circulate therein. For example, it may have a substantially spiral shape.

An external high-frequency power source (not shown) may be connected to the base 320 , and the high-frequency power may apply a predetermined power to the base 320 , and the applied power may be applied to the process space 205 of the housing 200 . Plasma generated from the process gas introduced therein may be guided to move toward the base 320 .

At least one focus ring 350 may be disposed on the periphery of the base 320 , and the focus ring 350 may be provided to focus plasma generated from the process gas onto the substrate W.

The gas supply unit 400 may supply a process gas onto the substrate W supported by the support unit 300 , and may include a gas storage tank 405 and a supply line 410 .

The supply line 410 may connect the gas storage tank 405 and the gas inlet port 415 provided on the upper part of the housing 200 , and the process gas stored in the gas storage tank 405 is the supply line 410 and the gas It may be introduced into the process space 205 of the housing 200 through the inlet port 415 .

The plasma generating unit 500 may convert the process gas introduced into the housing 200 from the gas supply unit 400 into a plasma state, and the plasma source of the plasma supply unit 500 is an inductively coupled plasma. (ICP) sources may be included.

The plasma supply unit 500 may include an antenna 505 and an external power supply 510 , and the external power supply 510 may apply power to the antenna 505 .

Accordingly, a discharge region may be formed in the process space 205 , and the process gas introduced into the discharge region may be converted into a plasma state.

The exhaust unit 600 may be disposed in the process space 205 adjacent to the support unit 300 , and the exhaust unit 600 may include a plurality of exhaust holes 605 , and plasma may be generated in the process space. The plasma may be exhausted to be substantially uniformly distributed throughout the 205 , for example, the exhaust unit 600 may have a substantially ring shape.

The focus ring 350 may be disposed to surround the support 305 and the substrate W. For example, the support 305 and the substrate W may be positioned on the central portion of the focus ring 350 . and the substrate W seated on the support 305 by the focus ring 350 having the above-described structure may maintain its original position.

In addition, the focus ring 350 may expand an area in which an electric field is formed in the process space 205 so that the substrate W is positioned in the center of the process space 205 where the plasma is formed.

Hereinafter, structures for the support part and the focus ring in the substrate support unit according to exemplary embodiments of the present invention will be described.

3 and 4 are schematic views for explaining a substrate support unit according to exemplary embodiments of the present invention.

3 and 4 , the support 305 in the substrate support unit (hereinafter, referred to as the support unit) 300 according to exemplary embodiments of the present invention provides a place where the substrate is placed. , the support 305 may be an electrostatic chuck provided to adsorb the substrate by electrostatic force when the substrate is placed.

In addition, since the support part 305 may be provided to have a structure in which the focus ring 350 surrounds the circumference of the support part 305, an end extending from the seating part together with the seating part on which the substrate is placed is stepped downward to have a structure. can be provided.

As mentioned above, the focus ring 350 is provided to surround the end of the support part 305 , and may be provided to surround a stepped portion at the end of the support part 305 .

The focus ring 350 may include a lower ring 351 and an upper ring 353 , the lower ring 351 may be provided to face the stepped portion of the support part 305 , and the upper ring 353 may have a lower portion It may be provided to interview the ring 351 .

And the upper ring 353 has a structure in which the portion facing the side of the substrate seated on the support 305 is inclined so that the substrate seated on the support 305 can be maintained in the correct position of the support 305 as mentioned above. As may be provided to have a, the inclined structure of the upper ring 353 may be provided so that the substrate seated on the support portion 305 can flow down toward the seating portion.

The lower ring 351 in the substrate support unit 300 according to the exemplary embodiments of the present invention may be made of silicon, and the upper ring 353 may be made of silicon, silicon carbide, or a mixture thereof.

And the lower ring 351 may be provided to have a structure coupled to the step portion in the support portion 305, the upper ring 353 may be provided to have a structure coupled to the lower ring 351, in particular, the step The portion and the lower ring 351 and the lower ring 351 and the upper ring 353 may be coupled to have a bonding structure, and the bonding structure may be achieved by using the heat transfer silicon pads 355 and 357 .

The use of the heat transfer silicon pads 355 and 357 when bonding the aforementioned bonding structure is to facilitate heat transfer between the lower ring 351 and the upper ring 353 during the process.

In addition, a first suction hole 361 capable of sucking air may be formed in the stepped portion of the support portion 305 to increase the coupling force when the step portion of the support portion 305 and the lower ring 351 are coupled to each other, and the lower ring A second suction hole 363 capable of sucking air may be formed in the lower ring 351 to increase the coupling force when the 351 and the upper ring 353 are coupled, and the first suction hole 361 and the second suction The hole 363 will not be limited to a position formed when it does not interfere with the suction of air, but the second suction hole 363 may be formed to be located between the grooves 359 to be described later.

And in the case of the first suction hole 361, if the support portion 305 has a circular structure, it may be formed in three places at intervals of about 120°.

In the upper ring 353 of the focus ring 350 of the support unit 300 according to exemplary embodiments of the present invention, a groove 359 may be formed in a portion facing the lower ring 351 . A heat transfer silicon pad 357 , which is a bonding material for bonding, may be filled in the 359 to protrude from the groove 359 , and for example, about 0.03 to 0.05 m from the groove 359 may be filled to protrude.

In addition, since the focus ring 350 may have a circular structure, the groove 359 may be provided to have a ring structure along the upper ring 353 .

Accordingly, the heat transfer silicon pad 357, which is a bonding material in the groove 359, is applied toward the surface of the lower ring 351 through air suction in the second suction hole 363, thereby forming the upper ring 353 and the lower ring. It may be provided to have a structure in which 351 is coupled.

As such, in the substrate support unit 300 according to exemplary embodiments of the present invention, the focus ring 350 is divided into an upper ring 353 and a lower ring 351 , and an upper ring 353 and/or a lower portion The ring 351 may be manufactured by selecting a relatively inexpensive material in terms of cost.

Hereinafter, a method of coupling a support part and a focus ring, which is a method of manufacturing a substrate support unit according to exemplary embodiments of the present invention, will be described.

First, a support portion 305 having a structure in which a seating portion on which a substrate is placed and an end extending from the seating portion are stepped downward, and a first suction hole 361 for air suction is provided in the stepped portion.

And the lower ring 351 having a structure in which a second suction hole 363 for air suction is provided as well as in contact with the step portion at the end of the support portion 305, the lower ring 351 as well as the lower ring Each of the upper rings 353 having a structure in which a groove 359 is formed is provided at a portion in contact with the ring 351 .

Then, after applying the heat transfer silicon pad 355, which is a bonding material, to the stepped portion or/and the lower ring 351, the step portion and the lower ring 351 are surfaced, and then air suction in the first suction hole 361 is performed. Through the support 305 and the lower ring 351 is coupled.

Subsequently, the heat transfer silicon pad 357, which is a bonding material, is filled in the groove 359 of the upper ring 353 to protrude, and then the lower ring 351 and the upper ring 353 are surfaced and then the second suction hole ( The lower ring 351 and the upper ring 353 are coupled through the air suction at 363 , and the air suction at the second suction hole 363 may be made through the first suction hole 361 .

As described above, in the method of manufacturing a substrate support unit according to exemplary embodiments of the present invention, the focus ring 350 is divided into an upper ring 353 and a lower ring 351 , and the upper ring 353 and/or the lower The ring 351 can be easily obtained by selecting a material that is relatively inexpensive in terms of cost and performing simple bonding using the heat transfer silicon pads 355 and 357 .

The substrate support unit and the method for manufacturing the same according to exemplary embodiments of the present invention can be applied to an etching process in manufacturing an integrated circuit device such as a semiconductor device, etc., and can be obtained through, for example, an etching process. It will be more easily applied to the manufacture of DRAM, NAND, system semiconductor, image sensor, and the like.

Although the above has been described with reference to the preferred embodiments of the present invention, those skilled in the art can variously modify and change the present invention within the scope without departing from the spirit and scope of the present invention as set forth in the following claims. You will understand that you can.

10: index module 20: processing module
30: load lock module 40: process module
50: load port 60: transport frame
70: cassette 80: carrier storage unit
90: index rail 100: index robot
105: index robot base 110: body
115: index robot arm 120: index hand
130: load lock chamber 135: unload lock chamber
150: transfer unit 155: transfer chamber
160: transfer robot 165: transfer space
170: transfer robot arm 175: transfer hand
180: process chamber 200: housing
205: process space 210: door
220: hole 300: support unit
305: support 310: internal electrode
315: heater 320: base
325: cooling flow path 350: focus ring
351: lower ring 353: upper ring
355, 357: silicone pad 359: groove
361: first suction hole 363: second suction hole
400: gas supply unit 405: gas storage tank
410: supply line 415: gas inlet port
500: plasma generating unit 505: antenna
510: external power 600: exhaust unit
605: exhaust hole

Claims (9)

A substrate support unit on which a substrate is placed, comprising:
a support part having a seating part on which the substrate is placed, and an end extending from the seating part being provided to be stepped downward; and
A lower ring provided to face the step portion at the end of the support, and an upper ring provided on the lower ring and facing the side of the substrate when surrounding the substrate placed on the support is inclined. A focus ring comprising:
A first suction hole for sucking air is formed in the step portion when the support part and the lower ring are coupled, and a second suction hole for sucking air when the lower ring and the upper ring are coupled to the lower ring is formed in the lower ring. , the support part and the lower ring, and the lower ring and the upper ring are coupled to have a bonding structure. According to claim 1,
The support unit is an electrostatic chuck provided to adsorb the substrate by an electrostatic force. According to claim 1,
wherein the lower ring is made of silicon, the upper ring is made of silicon, silicon carbide or a mixture thereof, and the bonding structure is made by using a heat transfer silicon pad. According to claim 1,
The first suction hole is a substrate support unit, characterized in that formed in three places at intervals of 120 °. According to claim 1,
In the upper ring, a groove is formed in a portion facing the lower ring, and a bonding material for bonding is filled in the groove to protrude from the groove, and the upper ring and the lower ring suck air in the second suction hole. A substrate support unit, characterized in that it is provided to have a structure coupled by the bonding material through the. A method of manufacturing a substrate support unit on which a substrate is placed, comprising:
providing a support part having a seating part on which the substrate is placed, and an end extending from the seating part being stepped downward and having a first suction hole for air suction in the stepped part;
providing a lower ring having a second suction hole for air suction while being in contact with the stepped portion at the end of the support;
providing an upper ring having a groove formed in a portion of the lower ring and the lower ring to face the lower ring;
applying a bonding material to the stepped portion and/or the lower ring and, after interviewing the stepped portion and the lower ring, coupling the support portion and the lower ring through air suction in the first suction hole; and
A bonding material is filled in the groove of the upper ring to protrude, and after the lower ring and the upper ring are surfaced, the lower ring is the upper part through air suction in the first and second suction holes. A method of manufacturing a substrate support unit comprising the step of engaging the ring. 7. The method of claim 6,
The lower ring is made of silicon, and the upper ring is made of silicon, silicon carbide, or a mixture thereof. 7. The method of claim 6,
The method of claim 1, wherein the bonding material is a heat transfer silicon pad. 7. The method of claim 6,
The method of manufacturing a substrate support unit, characterized in that the first suction holes are formed in three places at intervals of 120 °.

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