KR20220091385A - Manufacturing method for led assembly, led assembly and display including the same - Google Patents

Abstract

The present invention relates to a method for manufacturing an LED assembly, an LED assembly, and a display including the same, and more particularly, to a first mounting electrode patterned on a substrate, and a second mounting electrode disposed to be spaced apart from the first mounting electrode forming a barrier rib on the mounting electrode according to the pattern of the mounting electrode; injecting a dispersion including an LED element between the partition walls; and applying power to the mounting electrode to self-align one end of the LED device to the first mounting electrode and the other end of the LED device to overlap the second mounting electrode, respectively. It relates to an LED assembly and a display comprising the same.

Description

LED assembly manufacturing method, LED assembly, and display including the same

The present invention relates to a method for manufacturing an LED assembly, an LED assembly, and a display including the same, and more particularly, to a method for manufacturing an LED assembly with improved alignment of LED elements, an LED assembly, and a display including the same.

An LED (Light Emitting Diode, light emitting diode) is a semiconductor having a structure in which an n-type semiconductor crystal in which a plurality of carriers are electrons and a p-type semiconductor crystal in which a plurality of carriers are holes by using the characteristics of a compound semiconductor are bonded to each other. It is a semiconductor device that is expressed by converting light into light having a wavelength band of a desired region.

These LED semiconductors have high light conversion efficiency, so they consume very little energy, have a semi-permanent lifespan, and are environmentally friendly. Recently, with the development of compound semiconductor technology, high-brightness red, orange, green, blue and white LEDs have been developed, and by using them, many fields such as traffic lights, mobile phones, automobile headlights, outdoor electric signs, LCD BLU (back light unit), and indoor/outdoor lighting It is being applied in and active research continues at home and abroad.

Among these series of studies, research using ultra-small LED devices in which the size of LEDs are manufactured in nano or micro units is being actively conducted, and research to utilize these ultra-small LED devices for lighting, displays, etc. continues. The areas that are continuously attracting attention in these studies are the electrode that can apply power to the ultra-small LED device, the electrode arrangement for the purpose of use and reduction of the space occupied by the electrode, and the method of mounting the micro LED device on the disposed electrode. are things

Among them, there is a problem in that it is very difficult to place and mount the micro LED device on the electrode as intended due to size restrictions of the micro LED device in the method of mounting the micro LED device on the disposed electrode. This is because the ultra-small LED device is nano-scale or micro-scale, so it is impossible to place and mount it on a target electrode area by human hand or equipment.

Accordingly, there is a need to realize an LED device that can be mounted on a target electrode region by laying down the ultra-small LED device in the longitudinal direction, and improving the alignment of the mounted device.

An object of the present invention is to provide a method for manufacturing an LED assembly capable of further improving alignment of mounted LED devices.

And, the technical problem to be achieved by the present invention is to provide an LED assembly with improved alignment of LED elements.

In addition, the technical problem to be achieved by the present invention is to provide a display including the LED assembly.

The problems to be solved by the present invention are not limited to the problems mentioned above, and other problems not mentioned will be clearly understood by those skilled in the art from the following description.

According to embodiments of the present invention for achieving the above object, on a mounting electrode including a first mounting electrode patterned on a substrate and a second mounting electrode spaced apart from the first mounting electrode, the forming a barrier rib along the pattern of the mounting electrode; injecting a dispersion including an LED element between the partition walls; and applying power to the mounting electrode to self-align one end of the LED element to the first mounting electrode and the other end of the LED element to overlap the second mounting electrode, respectively. provided

A width of the barrier rib may be narrower than a width of the mounting electrode.

The length of the LED element may be longer than a distance between the first and second mounting electrodes adjacent to each other and shorter than a distance between the adjacent barrier ribs.

The barrier rib may include a portion in which the width of the barrier rib becomes wider as it approaches the mounting electrode.

The material of the barrier rib may include a material having low miscibility with the dispersion.

The partition wall may include a fluorine-based material.

Before forming the barrier rib, the method may further include forming an insulating layer on the mounting electrode.

After the self-aligning step, the step of forming a fixing pattern for fixing the LED device on the LED device may be further included.

The fixed pattern may be patterned through a negative photoresist.

After the self-aligning step, the method may further include removing the barrier rib.

The barrier rib may be removed by a barrier rib removing solvent including a fluorine-based solvent.

According to other embodiments of the present invention, a substrate; a mounting electrode including a first mounting electrode on the substrate and a second mounting electrode spaced apart from the first mounting electrode; and at least one LED element arranged so that one end overlaps and is positioned on the first mounting electrode and the other end overlaps and is positioned on the second mounting electrode, wherein among the total number of LED elements per unit area of the substrate There is provided an LED assembly in which the ratio of the number of the LED elements overlapping both ends is 90% or more.

A difference between the overlapping length of the first mounting electrode and one end of the LED element and the overlapping length of the second mounting electrode and the other end of the LED element may be within 10% of the total length of the LED element.

The LED element may include a first LED element and a second LED element, a length in which one end of the first LED element and the first mounting electrode overlap, and one end of the second LED element and the second LED element. A difference in length of overlapping one mounting electrode may be within 10% of an average length of the first LED element and the second LED element.

It may further include an insulating film disposed on the mounting electrode to insulate between the mounting electrode and the LED element, the first driving electrode overlapping one end of the LED element and electrically connected to the first driving electrode and the other end of the LED element overlap and may further include a driving electrode including a second driving electrode electrically connected thereto.

A difference between the overlapping length of the first driving electrode and one end of the LED element and the overlapping length of the second driving electrode and the other end of the LED element may be within 10% of the total length of the LED element.

A fixing pattern for fixing the LED element on the LED element may be further included.

The LED element may include a first LED element and a second LED element, and the fixing pattern may connect the first LED element and the second LED element.

According to another embodiment of the present invention, there is provided a display including the above-described LED assembly according to the present invention.

According to embodiments of the present invention, in the process of mounting the LED device, due to the barrier rib formed along the pattern of the mounting electrode, the LED device can be arranged in a more uniform and straight shape during self-alignment.

In addition, by providing the LED element with improved alignment and uniformity, the light emission uniformity of the light emitting device can be further improved.

Furthermore, the LED assembly according to the present invention can be widely applied to various industries including electronic devices such as lighting and displays.

1 is a flowchart illustrating a method of manufacturing an LED assembly according to an embodiment of the present invention.
2 is a cross-sectional view schematically illustrating a method for manufacturing an LED assembly according to an embodiment of the present invention.
3 is a cross-sectional view schematically illustrating a state in which an insulating film is formed on a mounting electrode in a method of manufacturing an LED assembly according to another embodiment of the present invention.
4 is a cross-sectional view schematically illustrating an arrangement of LED elements on an insulating film and an acute angle θ at the second point (B) side.
5 is a flowchart illustrating a method of manufacturing an LED assembly according to another embodiment of the present invention.
6 is a cross-sectional view schematically showing a state in which a fixing pattern is formed in an LED assembly according to another embodiment of the present invention.
7 is a cross-sectional view schematically illustrating a method of forming the fixing pattern of FIG. 6 .
8 is a flowchart illustrating a method of manufacturing an LED assembly according to another embodiment of the present invention.
9 is a cross-sectional view schematically showing a state in which a driving electrode is formed in an LED assembly according to another embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

Examples of the present invention to be described below are provided to more clearly explain the present invention to those of ordinary skill in the art, and the scope of the present invention is not limited by the following examples, The embodiment may be modified in many different forms.

The terminology used herein is used to describe specific embodiments, not to limit the present invention. As used herein, terms in the singular form may include the plural form unless the context clearly dictates otherwise. Also, as used herein, the terms “comprise” and/or “comprising” refer to a referenced shape, step, number, action, member, element, and/or group that specifies the existence of these groups. and does not exclude the presence or addition of one or more other shapes, steps, numbers, acts, elements, elements, and/or groups thereof. In addition, as used herein, the term “connection” not only means that certain members are directly connected, but also includes indirectly connected members with other members interposed therebetween.

In addition, in the present specification, when a member is said to be located "on" another member, this includes not only a case in which a member is in contact with another member but also a case in which another member is present between the two members. As used herein, the term “and/or” includes any one and any combination of one or more of those listed items. In addition, as used herein, terms such as "about", "substantially", etc. are used in the meaning of the range or close to the numerical value or degree, in consideration of inherent manufacturing and material tolerances, and to help the understanding of the present application The exact or absolute figures provided for this purpose are used to prevent the infringer from using the mentioned disclosure unfairly.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The size or thickness of the regions or parts shown in the accompanying drawings may be slightly exaggerated for clarity and convenience of description. Like reference numerals refer to like elements throughout the detailed description.

1 is a flowchart illustrating a method for manufacturing an LED assembly according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view schematically showing a method for manufacturing an LED assembly according to an embodiment of the present invention.

1 and 2, the LED assembly manufacturing method according to an aspect of the present invention,

On the mounting electrodes 21 and 22 including the first mounting electrode 21 patterned on the substrate 10 and the second mounting electrode 22 spaced apart from the first mounting electrode 21, forming a barrier rib 30 along the pattern of the mounting electrodes 21 and 22 (eg, step S10);

injecting the dispersion liquid 41 including the LED element 40 between the partition walls 30 (eg, step S20 ); and

Self-aligning by applying power to the mounting electrodes 21 and 22 so that one end of the LED element 40 overlaps the first mounting electrode and the other end of the LED element overlaps the second mounting electrode, respectively; For example, step S30) is included.

Among the manufacturing methods of the LED assembly, with respect to a method for mounting a miniature LED device on an disposed electrode, there is a problem in that it is difficult to dispose the LED device on a target portion due to the ultra-small size of the LED device. However, as in the present invention, the barrier rib formed along the pattern of the mounting electrode serves as a guide for positioning the ultra-small LED devices to correspond to the positions desired by the user, so that when the LED devices are self-aligned in the future, a more uniform and straight shape is obtained. It becomes possible to arrange the LED elements. Accordingly, it is possible to further improve the light emission uniformity of the light emitting device including the LED assembly manufactured according to the present invention.

First, the substrate 10 is prepared.

The substrate 10 may be selected from the group consisting of, for example, quartz, silicon, silicon carbide, zinc oxide, gallium nitride, aluminum nitride, zirconium diboride, gallium arsenide, and the like, but is not limited thereto. In addition, other heterogeneous substrates such as glass, sapphire, silicon carbide, GaAs, GaP, AlGaINP, Ge, SiSe, GaN, AlInGaN, InGaN, etc. may be used, and plastics and flexible polymer films that can be bent may be used. More specifically, the substrate 10 may be transparent. However, it is not limited to the above type, and in the case of a substrate on which an ordinary electrode can be formed, it may be used without limitation.

The first mounting electrode 21 and the second mounting electrode 22 may be disposed on the substrate 10 . The electrode forming materials of the first mounting electrode 21 and the second mounting electrode 22 are each independently from the group consisting of aluminum, copper, gold, silver, titanium, palladium, chromium, nickel, indium, and alloys thereof. Any one or more selected metal materials may be used, and ITO (Indium Tin Oxide), FTO (Fluorine Tin Oxide), ZnO (Zinc Oxide), AZO (Aluminum Zinc Oxide), GZO (Gallium Zinc Oxide), IZO (Indium Zinc Oxide), ), IGZO (Indium Gallium Zinc Oxide), and mixtures thereof may be any one or more materials selected from the group consisting of, specifically, the first mounting electrode 21 and the second mounting electrode 22 may be transparent. can When two or more types of electrode forming materials are used, specifically, the first mounting electrode 21 and the second mounting electrode 22 may each have a structure in which two or more materials are stacked or a single layer structure in which two or more materials are mixed. More specifically, each of the first mounting electrode 21 and the second mounting electrode 22 may be an electrode made of an aluminum/titanium alloy material. However, the first mounting electrode 21 and the second mounting electrode 22 are not limited to those described above. In addition, materials forming the first mounting electrode 21 and the second mounting electrode 22 may be the same or different.

In addition, the width of the first mounting electrode 21 and the second mounting electrode 22 may be 100 nm to 50 µm, specifically 1 µm to 5 µm, respectively, and the thickness is 0.1 to 10 µm, specifically may be 0.5 to 2 μm, but is not limited thereto.

In addition, the first mounting electrode 21 and the second mounting electrode 22 are chemical vapor deposition, physical vapor deposition, thermal deposition, vacuum deposition, atomic layer deposition, e-beam deposition, sputtering deposition, pulsed laser deposition, and It may be formed by forming and patterning an electrode forming material on the substrate 10 by a method such as screen printing.

Next, the barrier rib 30 is formed on the mounting electrodes 21 and 22 along the patterns of the mounting electrodes 21 and 22 , and may be formed by a process using a photoresist. First, the photoresist may be any one selected from a positive photoresist and a negative photoresist.

Photoresist refers to a resin that causes a chemical change when irradiated with light, and can be divided into positive photoresist and negative photoresist. A positive photoresist refers to a photosensitive resin in which the resist disappears by solubilizing only the portion touched by light, while a negative photoresist refers to a photosensitive resin in which the polymer is insolubilized only in the portion touched by light and the resist remains.

As a method of forming the photoresist, a generally known method such as spin coating, spray coating, screen printing, inkjet printing, etc. may be used.

At this time, on the transparent substrate, the barrier rib 30 can be formed through a rear exposure method in which the photoresist is exposed from the opposite side.

Here, the width of the barrier rib 30 may be narrower than the width of the mounting electrodes 21 and 22. When this condition is satisfied, the first mounting electrode 21 and the second mounting electrode 22 are adjacent to each other. ), the spacing between the adjacent partition walls 30 is larger than the spacing between them.

Meanwhile, the barrier rib 30 may include a portion in which the width of the barrier rib 30 becomes wider as it approaches the mounting electrodes 21 and 22 , that is, as it approaches the lower surface of the barrier rib 30 . At this time, the partition wall 30 includes an inclined surface. Due to the inclined surface, the case where the LED elements 40 are disposed on the partition wall 30 is reduced, and the LED elements 40 are spaced apart from the partition walls 30 . Movement to the lower surface of the , that is, the portion where the LED elements 40 are to be substantially aligned can be made more easily.

Referring to FIG. 2 , the cross section of the partition wall 30 shows a rectangular structure, but, unlike this, a trapezoidal cross-section having a wider lower surface, a triangular cross-section having a wider lower surface, a semi-circular cross-section, a quadrangular cross-section, etc. , the cross-section of the partition wall 30 may have various structures.

In addition, the material of the partition wall 30 may include a material having low miscibility with the dispersion liquid 41 . That is, the material of the partition wall 30 has a liquid-repellent property, and by applying a repulsive force to the dispersion liquid 41, it can act to push the dispersion liquid 41 and the LED element 40 dispersed therein. . Accordingly, the dispersion liquid 41 and the LED element 40 are prevented from being attached to the side surface of the barrier rib 30 , and the LED elements 40 are more easily moved to the lower surface of the space between the barrier ribs 30 . can do it

In this case, the material having low miscibility with the dispersion 41 may be a fluorine-based binder, specifically, a fluorine-based binder or a fluorine-based monomer. The partition wall 30 may be made of a fluorine-based material. And, in the case of the barrier rib made of the fluorine-based material, both the binder material and the monomer material may be made of the fluorine-based material.

The binder material may be an acryl-based polymer having a fluorine substituent, an epoxy-based polymer having a fluorine substituent, or a cyan-based polymer having a fluorine substituent, and the weight average molecular weight (Mw) may be in a range of 5,000 to 20,000. A specific example may be a fluorine-based material having the following structure, but this only corresponds to a specific embodiment, and a fluorine-based material having various structures is possible.

At this time, in the fluorine-based material having the above structure, a:b:c:d:e may be about 4:1.5:1.5:1.5:1.5 to 8:0.5:0.5:0.5:0.5, and more specifically about 6 It may be about 1:1:1:1:1, but is not limited thereto, and R may be hydrogen, halogen, an alkyl group, or an alkyl group substituted with a halogen, specifically an alkyl group, and more specifically a methyl group may be, but is not limited thereto.

And, the monomer material may be an acrylic monomer having a fluorine substituent, an epoxy-based monomer having a fluorine substituent, or a cyan-based monomer having a fluorine substituent, and specific examples include a fluorine-based material having the following structure, but this is in a specific embodiment Only applicable, fluorine-based materials of various structures are possible.

In addition to the monomers having a fluorine substituent, it may optionally further include a non-fluorine-based polymerizable monomer that does not contain a fluorine substituent. , but is not particularly limited, and a specific example thereof may be a monomer having the following structure.

It may further include an initiator, for example, may be an oxime ester-based, acetophenone-based, but is not limited thereto.

Furthermore, it may further include an additive such as a surfactant.

Of the total content of the barrier rib composition for forming the barrier rib 30, the content of the fluorine-based binder is 30 to 60% by weight, the content of the fluorine-based monomer is 5 to 30% by weight, and the content of the non-fluorine-based polymerizable monomer is 5 to 30% by weight. , the content of the initiator is 5 to 15% by weight, and may include a solvent such that the content of the solid content is 30 to 40% by weight.

Next, the dispersion liquid 41 including the LED element 40 is introduced between the partition walls 30 .

The LED device 40 may be employed without limitation as long as it is a known LED device that can be applied to lighting, displays, and the like. When the LED device 40 is described, the LED device 40 includes a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer formed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer. may include

When the first conductivity-type semiconductor layer includes an n-type semiconductor layer, the second conductivity-type semiconductor layer may include a p-type semiconductor layer.

When the LED device is a blue light emitting device, the n-type semiconductor layer may be a nitride-based or zinc oxide-based layer of Al, Ga, In, and more specifically, In _x Al _y Ga _1-xy N (0≤x≤ 1, 0 ≤ y ≤ 1, 0 ≤ x + y ≤ 1), and may include, for example, AlN, GaN, InN, AlGaN, AlInN, GaInN and InAlGaN, etc., In _x Al _y Zn _1-xy O (0≤x≤1, 0≤y≤1, 0≤x+y≤1) when expressed in the formula, for example, ZnO, AlO, AlZnO, InZnO, InO, InAlZnO. AlInO and the like may be included. In addition, the n-type semiconductor layer may be doped with a conductive dopant (eg, an n-type dopant such as Si, Ge, Sn). The n-type semiconductor layer may have a thickness of 100 nm to 5 μm, but is not limited thereto. Since the light emission of the LED device is not limited to blue, when the light emission color is different, there is no limitation in using a different type of group III-V semiconductor material as the n-type semiconductor layer. In addition, when the LED device is a blue light emitting device, the p-type semiconductor layer may be nitride-based or zinc oxide-based, specifically, In _x Al _y Ga _1-xy N (0 ≤ x ≤ 1, 0 ≤ y ≤ 1) , 0≤x+y≤1), and may include, for example, AlN, GaN, InN, AlGaN, AlInN, GaInN and InAlGaN, etc., In _x Al _y Zn _1-xy O (0≤x≤1, 0≤y≤1, 0≤x+y≤1), for example, ZnO, AlO, AlZnO, InZnO, InO, InAlZnO. AlInO and the like may be included. Also, the p-type semiconductor layer may be doped with a conductive dopant (eg, a p-type dopant such as Mg, Zn, Ca, Sr, or Ba). The thickness of the p-type semiconductor layer may be 100 nm to 5 μm, but is not limited thereto. Since the light emission of the LED device is not limited to blue, when the light emission color is different, there is no limitation in using a different type of group III-V semiconductor material as the p-type semiconductor layer.

The active layer may be formed interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, and when a voltage is applied to the device, the active layer generates light of a specific wavelength by bonding electron-hole pairs. do. Such an active layer may be formed of a single or multiple quantum well structure, a quantum wire (Quantum-Wire) structure, or a quantum dot (Quantum Dot) structure. The active layer may include at least one of BAlGaN, GaAlNP, GaAlNAs, InAlGaN, GaAlNSb, GaInNP, GaInNAs, and GaInNSb, and specifically, InGaN. A clad layer doped with a conductive dopant may be formed above and/or below the active layer, and the clad layer doped with a conductive dopant may be implemented as an AlZnO layer, an AlGaN layer, an InAlGaN layer, or the like. More specifically, the thickness of the active layer may be 10 ~ 500nm, but is not limited thereto. The position of the active layer may be variously formed depending on the type of LED. Such an active layer may be used without limitation as long as it is an active layer used in a typical LED device.

Meanwhile, the LED element 40 may be injected between the partition walls 30 in the form of a dispersion liquid 41 dispersed in a dispersion solvent capable of dispersing the LED elements 40 .

The dispersion may be in the form of ink or paste. The dispersion solvent may be used without limitation as long as it is a volatile solvent, and specifically, one or two or more kinds of acetone, water, alcohol, and toluene may be selected, for example, acetone.

In addition, the LED devices 40 may be included in an amount of 0.001 to 100 parts by weight based on 100 parts by weight of the dispersion solvent, and specifically, the LED devices 40 may be included in an amount of 1 to 70 parts by weight based on 100 parts by weight of the dispersion solvent.

Then, power is applied to the mounting electrodes 21 and 22 so that one end of the LED device 40 overlaps the first mounting electrode and the other end of the LED device 40 overlaps the second mounting electrode, respectively. sort In this case, the voltage of the power applied to the first mounting electrode 21 and the second mounting electrode 22 may be 0.1 to 2,000 V, and the frequency of the power may be 50 kHz to 1 GHz.

The mounting electrodes 21 and 22 not only serve to self-align the LED element 40, but also serve as a driving electrode for directly driving the LED assembly after being manufactured as an LED assembly in the absence of a separate driving electrode. It can also play a role.

The length of the LED element 40 may be 0.5 to 5㎛, and the diameter may be 0.05 to 2.5㎛, but is not limited thereto. However, if the diameter of the LED element 40 is less than the numerical range, the resistance in the LED element 40 may increase, which causes heat generation of the LED element 40, which may result in a shortened lifespan. .

In addition, the length of the LED element 40 may be longer than a distance between the first mounting electrode 21 and the second mounting electrode 22 adjacent to each other and shorter than a distance between the partition walls 30 adjacent to each other. By satisfying these conditions, the center of the LED element is positioned between the first mounting electrode 21 and the second mounting electrode 22 , and any one of the first mounting electrode 21 and the second mounting electrode 22 is don't lean to the side. Accordingly, when power is applied, in the upper space of the first mounting electrode 21 and the second mounting electrode 22, certain portions of both ends of the LED device are formed by the first mounting electrode 21 and the second mounting electrode 22, respectively. While overlapping the two mounting electrodes 22 may be uniformly arranged. Specifically, the overlapping length of the LED element 40 on the first mounting electrode 21 and the second mounting electrode 22 may be about 10% of the length of the LED element, but is not limited thereto.

And, the difference between the distance (L ₁ ) between any adjacent LED elements in any first pixel and the distance (L ₂ ) between any adjacent LED elements in any second pixel adjacent to the first pixel is The less light, the better the brightness of the LED assembly, i.e. average illuminance. The value calculated through Equation 1 below may be 25% or less, specifically 20% or less, and more specifically 15% or less.

[Formula 1]

Meanwhile, FIG. 3 is a cross-sectional view schematically illustrating a state in which an insulating film is formed on a mounting electrode in a method of manufacturing an LED assembly according to another embodiment of the present invention.

Referring to FIG. 3 , in the aforementioned step (S10), before forming the barrier rib 30, the step (S10′) of forming an insulating film 50 on the mounting electrodes 21 and 22 is further included. can do.

Through these steps, the insulating film 50 can be formed on the mounting electrodes 21 and 22 and the substrate 10 exposed to the outside, and a portion of the substrate 10 exposed to the outside and The mounting electrodes 21 and 22 are blocked from the outside. If the active layer of the LED element 40 is in direct contact with the mounting electrodes 21 and 22 when the LED element 40 is aligned, an electrical short may occur. However, the insulating film 50 may serve to prevent the active layer of the LED device 40 from directly contacting the mounting electrodes 21 and 22 .

The thickness of the insulating film 50 varies depending on the voltage of the power applied to the mounting electrodes 21 and 22, the length of the LED element 40, and the distance between the adjacent first and second mounting electrodes 21 and 22, etc. can Specifically, it may be 0.01 to 5 μm, and more specifically, 0.1 to 3 μm, but is not limited thereto. If the thickness of the insulating film 50 is less than the numerical range, a short circuit of the LED device may occur, and if it exceeds the numerical range, there is a problem in that the mountability of the LED element may be deteriorated.

And, the insulating film 50 is SiO ₂ , Si ₃ N ₄ , SiN _x , P ₂ O ₅ , B ₂ O ₃ , Al ₂ O ₃ , ZrO ₂ , HfO ₂ , Y ₂ O ₃ and TiO ₂ A group consisting of It may include any one or more selected from, and more specifically, may be Si ₃ N ₄ , but is not limited thereto.

Meanwhile, FIG. 4 is a cross-sectional view schematically illustrating an arrangement of LED elements on an insulating film and an acute angle θ at the second point B side.

Referring to FIG. 4 , the acute angle θ on the side of the second point B may be obtained from the diameter and length of the LED element 40 , the thickness of the mounting electrodes 21 and 22 , and the thickness of the insulating film 50 . . Using the imaginary triangle formed by the first to third points A to C, the acute angle θ at the second point B may be obtained through mathematical calculation.

For reference, the first point (A) is a surface extending in the vertical direction from the side of the first mounting electrode (21), and the first point extending in the longitudinal direction from the center point of the LED element (40) to both ends of the LED element (40). It may be a point where one extension line meets, and the second point (B) may be a point located at an end in the opposite direction to the first point (A) based on the center point of the LED element 40 on the first extension line, The third point C may be a point where a second extension line extending in a direction perpendicular to the first extension line from the first point A meets the lowermost end of the side surface of the first mounting electrode 21 .

The second point (B) side acute angle θ may be 25° to 50°, specifically 28° to 46°, more specifically 32.5° to 42.5°. If it is less than the numerical range, the mountability of the LED element 40 may increase, but the possibility of a short circuit of the LED element 40 increases, the brightness of the LED assembly may decrease, and the diameter of the LED element 40 is excessively large. As it becomes smaller, the lifetime characteristics may be lowered due to heat generated due to an increase in the resistance of the LED element 40, and when the numerical range is exceeded, the possibility of short circuit of the LED element 40 decreases, but the mounting of the LED element 40 There is a problem that sex may decrease.

Meanwhile, FIG. 5 is a flowchart showing a method of manufacturing an LED assembly according to another embodiment of the present invention, FIG. 6 is a cross-sectional view schematically showing a state in which a fixing pattern is formed on the LED assembly, and FIG. 7 is a method of forming a fixing pattern is a cross-sectional view schematically showing the

5 to 7 , the LED assembly manufacturing method according to another embodiment of the present invention is performed after the step S30, and fixing the LED element 40 on the LED element 40 is fixed. The step of forming the pattern 60 (step S35) may be further included.

The fixing pattern 60 may be formed by a process using a photoresist, which is similar to that described in the section related to the formation of the barrier rib 30 . However, it is more preferable to use a negative photoresist 61 for the fixing pattern 60 .

When explaining the formation process of the fixed pattern 60 in more detail, first, a negative photoresist 61 is applied to the entire upper surface of the result of step (S30), and then the fixed pattern 60 is applied to the upper surface of the fixed pattern 60. After aligning the mask 62 on which the pattern for exposing the region to be formed is formed, UV is irradiated to insolubilize the exposed region of the negative photoresist 61 , that is, the region corresponding to the fixed pattern 60 . can do it

The fixed pattern 60 thus formed serves to fix the LED element 40 , and serves to prevent the LED element 40 from being lost when the barrier rib 30 is removed later.

However, since the UV irradiation time varies depending on the amount of UV light to be irradiated, it can be appropriately adjusted.

Meanwhile, FIG. 8 is a flowchart illustrating a method of manufacturing an LED assembly according to another embodiment of the present invention. The method for manufacturing an LED assembly according to another embodiment of the present invention may further include, after the step (S30), the step of removing the barrier rib 30 (step S40).

In this case, the barrier rib 30 may be removed by a barrier rib removing solvent. Specifically, the barrier rib removal solvent may be a fluorine-based solvent, and non-limiting examples of the fluorine-based solvent include perfluorooctane, hexafluoroisopropanol, trifluoroethanol, and the like.

Meanwhile, FIG. 9 is a cross-sectional view schematically illustrating a state in which a driving electrode is formed in an LED assembly.

9, the LED assembly manufacturing method according to another embodiment of the present invention is performed after the step (S40) of removing the barrier rib 30, and the step of forming the driving electrodes 71 and 72 is further performed. may include

In detail, the first driving in contact with at least a portion of both ends of the LED device 40 arranged so that both ends are positioned on the first and second mounting electrodes 21 and 22, respectively. An electrode 71 and a second driving electrode 72 may be formed.

When the insulating film 50 is formed on the first mounting electrode 21 and the second mounting electrode 22, even when power is applied, the first mounting electrode 21 and the second mounting electrode 22 are the LEDs. It is not possible to drive the LED element 40 because it cannot be electrically connected to the element 40 . Accordingly, the first driving electrode 71 and the second driving electrode 72 may be formed to be electrically connected to the LED element 40 disposed on the insulating layer.

At this time, the first driving electrode 71 and the second driving electrode 72 are chemical vapor deposition, physical vapor deposition, thermal deposition, vacuum deposition, atomic layer deposition, e-beam deposition, sputtering deposition, pulse laser deposition, and It may be formed by forming an electrode-forming material by a method such as screen printing and patterning it through a photoresist process or the like.

In particular, the driving electrodes 71 and 72 may be formed by both a process using a positive photoresist and a process using a negative photoresist, provided that the above-described fixing pattern 60 is not present. However, if the above-described fixed pattern 60 is formed by a process using a negative photoresist, forming the driving electrodes 71 and 72 by a process using a positive photoresist will improve the easiness of the subsequent etching process. It is preferable for

In addition, the first driving electrode 71 and the second driving electrode 72 are each independently from the group consisting of aluminum, copper, gold, silver, titanium, palladium, chromium, nickel, indium, and alloys thereof. Any one or more selected metal materials may be used, and ITO (Indium Tin Oxide), FTO (Fluorine Tin Oxide), ZnO (Zinc Oxide), AZO (Aluminum Zinc Oxide), GZO (Gallium Zinc Oxide), IZO (Indium Zinc Oxide), ), IGZO (Indium Gallium Zinc Oxide), and mixtures thereof may be any one or more materials selected from the group consisting of, specifically, the first driving electrode 71 and the second driving electrode 72 may be transparent. can When the electrode-forming materials are two or more, specifically, the first driving electrode 71 and the second driving electrode 72 may each have a structure in which two or more materials are stacked or a single-layer structure in which two or more kinds of materials are mixed. . More specifically, each of the first driving electrode 71 and the second driving electrode 72 may be an electrode made of an aluminum/titanium alloy material. However, the first driving electrode 71 and the second driving electrode 72 are not limited thereto. In addition, materials forming the first driving electrode 71 and the second driving electrode 72 may be the same or different.

The width of the first driving electrode 71 and the second driving electrode 72 may be 100 nm to 50 μm, specifically, 1 μm to 5 μm, respectively, and the thickness is 0.1 to 10 μm, specifically may be 0.5 to 2 μm, but is not limited thereto.

On the other hand, referring to the above drawings, the LED assembly according to another aspect of the present invention, the substrate 10; mounting electrodes (21, 22) including a first mounting electrode (21) on the substrate (10) and a second mounting electrode (22) spaced apart from the first mounting electrode (21); and at least one LED element 40 arranged so that one end overlaps on the first mounting electrode 21 and the other end overlaps on the second mounting electrode 22 , the substrate A ratio of the number of the LED elements having both ends overlapping among the total number of LED elements per unit area of may be 90% or more, and specifically, the ratio of the number of the overlapping LED elements may be 95% or more. In this case, the brightness and lifetime of the LED assembly can be improved.

In the LED assembly according to the present invention, the length at which one end of the first mounting electrode 21 and the LED element 40 overlap, and the second mounting electrode 22 and the other end of the LED element 40 are The difference in overlapping length may be within 10% of the total length of the LED element 40, specifically within 5% of the total length of the LED element 40, more specifically, the entire length of the LED element 40 It may be within 3% of the length. In this case, the light efficiency may be improved to increase the lifespan of the LED assembly.

Detailed configurations of the LED assembly according to the present invention are the same as those described in the above detailed description of the present invention, and thus a detailed description thereof will be omitted.

In addition, the LED element 40 includes a first LED element and a second LED element, a length in which one end of the first LED element and the first mounting electrode overlap, and one end of the second LED element. The difference between the overlapping length of the first mounting electrode and the first mounting electrode may be within 10% of the average length of the first LED element and the second LED element, specifically, the average of the first LED element and the second LED element It may be within 5% of the length, more specifically, within 3% of the average length of the first LED element and the second LED element. In this case, the brightness and lifetime of the LED assembly can be improved.

In addition, it further includes an insulating film 50 disposed on the mounting electrode to insulate between the mounting electrodes 21 and 22 and the LED element 40, overlapping one end of the LED element 40 and electrically It may further include driving electrodes 71 and 72 including a first driving electrode 71 connected to each other and a second driving electrode 72 electrically connected to the second driving electrode 72 overlapping the other end of the LED element 40 .

The difference between the overlapping length of one end of the first driving electrode 71 and the LED element 40 and the overlapping length of the second driving electrode 72 and the other end of the LED element 40 is the It may be within 10% of the total length of the LED element 40, specifically, within 5% of the average length of the first LED element and the second LED element, more specifically, the first LED element and the second LED element may be within 3% of the average length of

Here, the number of LED elements satisfying the difference in overlapping lengths may be 80% or more, specifically, 90% or more of the total number of LED elements existing in an arbitrary unit light emitting area. More specifically, 100%, that is, all the LED elements present in the unit light emitting area may satisfy the difference in the overlapping length.

When these conditions are satisfied, the LED element 40 is formed on the first mounting electrode 21 and the second mounting electrode 22 so as not to be biased toward any one of the mounting electrodes, and as a result, the driving electrode 71, 72) and the LED element 40 do not generate a short circuit, and the contact area between the driving electrodes 71 and 72 and both ends of the LED element 40 becomes uniform, making the LED element 40 more stable and balanced. ) can be emitted.

Here, a fixing pattern 60 for fixing the LED device 40 on the LED device 40 may be further included, and the role of the fixing pattern 60 is as described above.

In this case, the LED element 40 may include a first LED element and a second LED element, and the fixing pattern 60 may connect the first LED element and the second LED element.

On the other hand, the display according to another aspect of the present invention includes the above-described LED assembly according to the present invention.

Hereinafter, an LED assembly manufactured by the method for manufacturing an LED assembly according to an embodiment of the present invention will be described in detail with reference to Examples and Comparative Examples. In addition, the examples shown below are examples for helping understanding of the present invention, and the scope of the present invention is not limited thereto.

<Example 1>

First, a first mounting electrode made of an aluminum/titanium alloy material and a second mounting electrode made of an aluminum/titanium alloy material are formed on a substrate having a crystal material thickness of 850 μm to be spaced apart from the first mounting electrode. After forming an insulating film having a thickness of 1 μm of Si ₃ N ₄ material on the upper surfaces of the first mounting electrode and the second mounting electrode and the exposed upper surface of the substrate, The barrier ribs were formed to increase in width toward the bottom along the region on the insulating layer. At this time, the width of each of the first mounting electrode and the second mounting electrode was 3 μm and the thickness was 0.5 μm, and the partition wall was formed by a partition wall composition for forming a partition wall, and the partition wall composition is a binder material and is represented by Formula 1 below. 45% by weight of the compound represented by 20% by weight and 25% by weight of the compound represented by the following Chemical Formula 2 as a fluorine-based monomer material and 20% by weight and 25% by weight of the compound represented by the following Chemical Formula 3 as a non-fluorine-based monomer material, respectively, as an initiator OXE-01 and Irgacure 369 was included in an amount of 5 wt%, respectively, and PGMEA was included as a solvent so that the solid content was 35 wt%. The average width of the barrier ribs was 2.4 µm, the bottom width of the barrier ribs was 2.5 µm, and the distance between the first and second mounting electrodes adjacent to each other was 2 µm.

[Formula 1]

a:b:c:d:e is 6:1:1:1:1, Mw is 10,000, used in random copolymer form

[Formula 2]

[Formula 3]

Then, in the region between the formed partition walls, a second conductivity type semiconductor layer made of p-GaN material, an active layer made of InGaN material, and a first conductivity type semiconductor material made of n-GaN material are sequentially stacked with respect to 100 parts by weight of acetone as a dispersion solvent. A dispersion solution containing 1 part by weight of an LED device having a length of 2.5 μm including a layer and a radius of cross section of 0.25 μm was added, and AC power with a voltage of VAc = 30 V and a frequency of 950 kHz was applied to the mounting electrode for 1 minute. The LED element was self-aligned.

Then, in order to connect and fix the upper surface of each LED device, negative photoresist is applied, masked, UV irradiation, and heat treatment at 100° C. for 1.5 minutes to form a fixing pattern, and trifluoroethanol is included as a fluorine-based solvent The barrier ribs were removed through a barrier rib removal solvent.

Thereafter, each of the first and second driving electrodes made of an aluminum/titanium alloy material in contact with at least a portion of both ends of the self-aligned LED device, respectively, to have a width of 3.5 μm and a thickness of 0.5 μm, respectively, the LED The assembly was prepared.

<Example 2>

An LED assembly was manufactured in the same manner as in Example 1, except that the widths of the upper and lower ends of the barrier rib were the same.

<Example 3>

An LED assembly was manufactured in the same manner as in Example 1, but without forming a fixed pattern.

<Example 4>

It was manufactured in the same manner as in Example 1, except that the barrier rib composition used in Example 1 was used to form the barrier ribs, and additional barrier ribs were added in a direction perpendicular to the pattern direction of the first mounting electrode and the second mounting electrode. After forming (horizontal barrier ribs), a subsequent process was performed to manufacture an LED assembly. At this time, the average width of the transverse barrier ribs was 2.4 μm, and the width of the lower end of the transverse barrier ribs was 2.5 μm.

<Example 5>

It was manufactured in the same manner as in Example 1, except that the barrier rib composition used in Example 1 was used to form the barrier rib, and additional barrier ribs were added in a direction perpendicular to the pattern direction of the first mounting electrode and the second mounting electrode. After forming (horizontal barrier ribs), a subsequent process was performed to manufacture an LED assembly. At this time, the width of the transverse partition wall was 2.4 μm, and the widths of the upper and lower ends were the same.

<Example 6>

It was manufactured in the same manner as in Example 1, except that the thickness of each of the first and second mounting electrodes was changed to 0.44 μm, the thickness of the insulating film was changed to 0.56 μm, and the radius of the cross section of the LED element was changed to 0.1 μm to manufacture an LED assembly. did

<Example 7>

It was manufactured in the same manner as in Example 1, except that the thickness of each of the first and second mounting electrodes was 0.45 μm, the thickness of the insulating film was changed to 0.7 μm, and the radius of the cross section of the LED element was changed to 0.15 μm to manufacture an LED assembly. did

<Example 8>

It was manufactured in the same manner as in Example 1, except that the thickness of each of the first and second mounting electrodes was 0.47 μm, the thickness of the insulating film was 0.88 μm, and the radius of the cross section of the LED element was changed to 0.2 μm to manufacture an LED assembly. did

<Example 9>

An LED assembly was manufactured in the same manner as in Example 1, except that the thickness of the first and second mounting electrodes was changed to 0.56 μm and the thickness of the insulating film was changed to 1.14 μm.

<Example 10>

An LED assembly was manufactured by changing the thickness of each of the first mounting electrode and the second mounting electrode to 0.64 μm and the thickness of the insulating film to 1.26 μm.

<Example 11>

An LED assembly was manufactured in the same manner as in Example 1 except that the thickness of each of the first and second mounting electrodes was changed to 0.75 μm and the thickness of the insulating film was changed to 1.5 μm.

<Example 12>

Manufactured in the same manner as in Example 1, but without removing the barrier rib, and then proceeding with the subsequent process to manufacture an LED assembly.

<Comparative Example 1>

It was manufactured in the same manner as in Example 1, but an LED assembly was manufactured without forming a partition wall during the manufacturing process.

<Comparative Example 2>

It was manufactured in the same manner as in Example 1, except that a barrier rib was not formed on the insulating film corresponding to the pattern of the first mounting electrode and the second mounting electrode during the manufacturing process. After forming a barrier film made of silicon dioxide to prevent leakage of the dispersion containing the device, the dispersion was introduced and the subsequent process was performed to manufacture an LED assembly.

<Comparative Example 3>

An LED device to be manufactured in the same manner as in Example 1, but mounted on a substrate including a mounting electrode without forming barrier ribs on the insulating film corresponding to the patterns of the first mounting electrode and the second mounting electrode during the manufacturing process After forming a slit-shaped mounting guide extending in the direction of the second mounting electrode adjacent to the first mounting electrode, which is the longitudinal direction of did

<Experimental Example 1>

The following items were evaluated for the LED assemblies manufactured according to Examples 1 to 3 and Comparative Examples 1 to 3 and are shown in Table 1 below.

1. Ratio of LED elements with one end and the other end overlapping the mounting electrode

With respect to the LED assemblies manufactured according to the above Examples and Comparative Examples, the ratio of the LED elements having one end and the other end overlapped with the mounting electrode among all the LED elements was counted through an optical microscope.

2. Measurement of the ratio of the difference in length overlapping with the mounting electrode compared to the total length of the LED element

With respect to the LED assembly manufactured according to the embodiment and the comparative example, for 100 arbitrary LED elements in which one end and the other end overlap the mounting electrode, the length at which the first mounting electrode and one end of the LED element overlap; 2 The difference between the overlapping length of the mounting electrode and the other end of the LED device was measured. Then, the ratio of the measured length difference with respect to the total length of the LED element was calculated.

3. Measurement of the ratio of the difference in length overlapping with the driving electrode compared to the total length of the LED element

With respect to the LED assembly manufactured according to the embodiment and the comparative example, for 100 arbitrary LED elements in which one end and the other end overlap the driving electrode, the length at which the first driving electrode and the one end of the LED element overlap; 2 The difference between the overlapping length of the driving electrode and the other end of the LED device was measured. Then, the ratio of the measured length difference with respect to the total length of the LED element was calculated.

4. LED device emission evaluation

For the LED assemblies manufactured according to the above Examples and Comparative Examples, power was applied to each LED assembly, and the number of LED elements emitting light within a radius of 150 μm based on the center of the LED assembly was counted through an optical microscope. . In this case, the number of LED elements emitting light in Examples 1 to 3 and Comparative Examples 1 to 3 was calculated on the basis of the case where the number of LED elements emitting light in Comparative Example 1 was 100.

5. LED assembly brightness evaluation

With respect to the LED assemblies manufactured according to the Examples and Comparative Examples, the average illuminance of the LED elements emitting light by applying power to each LED assembly was measured. At this time, the average illuminance of the LED assemblies according to Examples 1 to 3 and Comparative Examples 1 to 3 was calculated based on the case where the average illuminance of the LED assembly according to Comparative Example 1 was 100.

6. LED assembly lifetime evaluation

For the LED assemblies manufactured according to the above Examples and Comparative Examples, power was applied to each LED assembly to evaluate the lifespan of the LED assembly. At this time, the point in time when the illuminance decreased by 30% compared to the initial illuminance of each LED assembly was measured, and Examples 1 to 3 and Comparative Examples 1 to 3 based on the case where the lifetime of the LED assembly according to Comparative Example 1 was 100. The lifetime of the LED assembly was calculated according to

For reference, in relation to the item "Ratio (%) of the difference in length overlapping with the driving electrode relative to the total length of the LED device" in Table 1, the difference in overlapping length as the results of each of Examples and Comparative Examples The satisfactory number of LED elements occupied 80% or more of the total number of LED elements existing in the unit light emitting area.

division Example 1 Example 2 Example 3 Comparative Example 1 Comparative Example 2 Comparative Example 3 Ratio (%) of the LED element in which one end and the other end overlap the mounting electrode 96 92 91 64 71 76 Ratio (%) of the difference in length overlapping with the mounting electrode compared to the total length of the LED element 0.4 3.6 5.8 13.2 10.3 7.9 Ratio of the difference in length overlapping with the driving electrode compared to the total length of the LED element (%) 0.3 3.5 5.6 12.9 10.6 8.2 LED element emission evaluation 373 265 192 100 128 135 LED assembly brightness evaluation 258 201 188 100 108 121 LED assembly lifetime evaluation 276 220 207 100 113 133

As can be seen in Table 1 above, Examples 1 to 3 in which the barrier ribs were formed during the manufacturing process showed luminescence evaluation results, brightness evaluation results, and lifetime evaluation results compared to Comparative Examples 1 to 3 in which barrier ribs were not formed. It can be confirmed that all of them are remarkably excellent at the same time.

<Experimental Example 2>

The following items were evaluated for the LED assemblies manufactured according to Examples 1, 4, and 5, and are shown in Table 2 below.

1. Distance between any adjacent LED elements within a pixel (L _One ) and the distance between any adjacent LED elements in adjacent pixels (L ₂ ) measure the difference

After additionally manufacturing one LED assembly (Example 1-1, Example 4-1, and Example 5-1) in the same manner as in Examples 1, 4 and 5, Example 1 Measure the distance (L ₁ ) between any adjacent (based on the width direction of the LED element) LED elements in the LED assembly manufactured according to ) After measuring the distance (L ₂ ) between the LED elements, the difference between the distances was measured according to Equation 1 below. At this time, in the same manner as the method for measuring the distance difference between adjacent LED elements in the LED assembly manufactured according to Examples 1 and 1-1, Examples 4 and 4-1 and 5 and 5-1 The distance difference between adjacent LED elements in the LED assembly manufactured according to the method was measured.

[Formula 1]

2. LED assembly brightness evaluation

For the LED assemblies manufactured according to Example 1, Example 1-1, Example 4, Example 4-1, Example 5, and Example 5-1, power is applied to each LED assembly to emit light. The average illuminance of the LED device was measured. At this time, based on the case where the average illuminance of the LED assemblies according to Examples 1 and 1-1 is 100, the average illuminance of the LED assemblies according to Examples 4 and 4-1, and Examples 5 and 1-1 The average illuminance of the LED assembly according to 5-1 was calculated, respectively.

division Examples 1 and 1-1 Examples 4 and 4-1 Examples 5 and 5-1 (|L ₁ -L ₂ |)/L ₁ (%) 22 13 17 LED assembly brightness evaluation 100 109 106

As can be seen from Table 2, in Examples 4 and 4-1 and Examples 5 and 5-1 in which additional partition walls (transverse partition walls) were formed, the value of (|L ₁ -L ₂ |)/L ₁ was was smaller, meaning that the distance between arbitrary adjacent LED elements within the unit light emitting area and the distance between arbitrary adjacent LED elements within another unit light emitting area adjacent to the unit light emitting area were similar. That is, it can be seen that as the value of (|L ₁ -L ₂ |)/L ₁ decreases, the alignment uniformity improves and the brightness of the LED assembly becomes brighter.

In particular, in Examples 4 and 4-1, in which the cross-sectional shape of the additional barrier ribs are trapezoidal, the value of (|L ₁ -L ₂ |)/L ₁ was the smallest.

<Experimental Example 3>

The following items were evaluated for the LED assemblies manufactured according to Examples 1 and 6 to 11, and are shown in Table 4 below.

1. Angle measurement

With respect to the LED assembly manufactured according to Examples 1 and 6 to 11, a surface extending in a vertical direction from the side of any one of the first and second mounting electrodes and the center point of the LED element A first point at which a first extension line extending in the longitudinal direction to both ends of the LED element meets, a second point located at an end opposite to the first point on the first extension line with respect to the center point of the LED element, and the first The acute angle θ on the side of the second point was measured through an imaginary triangle formed by the third point where the lowermost end of the side of the mounting electrode meets the second extension line extending in the direction perpendicular to the first extension line from the point (Fig. see 4).

When the overlapping length of the LED device and the first or second mounting electrode on one side of the LED device is 0.25 μm, which is 10% of the length of the LED device, the acute angle θ at the second point of the embodiments is shown in Table 3 below. It can be obtained from the listed data.

division Example 1 Example 6 Example 7 Example 8 Example 9 Example 10 Example 11 LED element radius (㎛) 0.25 0.1 0.15 0.2 0.25 0.25 0.25 Mounting electrode thickness (㎛) 0.5 0.44 0.45 0.47 0.56 0.64 0.75 Insulation film thickness (㎛) One 0.56 0.7 0.88 1.14 1.26 1.5 θ(°) 37.87 26.05 30.02 34.56 40.91 43.70 48.01

2. LED element light emission evaluation (mountability evaluation according to the increase in insulating film thickness)

With respect to the LED assemblies manufactured according to Examples 1 and 6 to 11, by applying power to each LED assembly, the number of LED elements emitting light within a radius of 150 μm with respect to the center of the LED assembly is determined. Counting was performed through an optical microscope. At this time, the number of LED elements emitting light in Examples 6 to 11 was calculated on the basis of the case where the number of LED elements emitting light in Example 1 was 100.

3. LED assembly brightness evaluation (evaluation of occurrence of short circuit due to reduction in insulating film thickness)

With respect to the LED assemblies manufactured according to Examples 1 and 6 to 11, the average illuminance of the LED elements emitting light by applying power to each LED assembly was measured. In this case, the average illuminance of the LED assemblies according to Examples 6 to 11 was calculated based on the case where the average illuminance of the LED assembly according to Example 1 was 100.

4. LED assembly lifetime evaluation (lifetime evaluation due to reduced radius of LED element)

For the LED assemblies manufactured according to Example 1 and Examples 6 to 11, power was applied to each LED assembly to evaluate the lifespan of the LED assembly. At this time, the point in time when the illuminance decreased by 30% compared to the initial illuminance of each LED assembly was measured, and the LED assembly according to Examples 6 to 11 based on the case where the lifespan of the LED assembly according to Example 1 was 100. was calculated.

division Example 1 Example 6 Example 7 Example 8 Example 9 Example 10 Example 11 Second point side acute angle (°) 37.87 26.05 30.02 34.56 40.91 43.70 48.01 LED element emission evaluation 100 106 104 101 99 92 79 LED assembly brightness evaluation 100 85 94 99 99 93 81 LED assembly lifetime evaluation 100 80 92 98 100 101 99

As can be seen from Table 4, as the thickness of the insulating film increases, the mountability of the LED element decreases, and it can be seen that the number of emitting LED elements tends to decrease. Conversely, as the thickness of the insulating film decreases, the short circuit of the LED element As the probability of occurrence increases, it can be seen that the brightness of the LED assembly tends to decrease. Furthermore, it can be seen that as the radius of the LED element decreases, the lifespan of the LED assembly decreases due to an increase in heat generation of the LED element.

<Experimental Example 4>

The following items were evaluated for the LED assemblies manufactured according to Examples 1 and 12, and are shown in Table 5 below.

1. LED device emission evaluation

With respect to the LED assemblies manufactured according to Examples 1 and 12, power is applied to each LED assembly, and the number of LED elements emitting light within a radius of 150 μm based on the center of the LED assembly is measured through an optical microscope. counted. At this time, the number of LED elements emitting light in Example 1 was calculated on the basis of the case where the number of LED elements emitting light in Example 12 was 100.

2. LED assembly brightness evaluation

With respect to the LED assemblies manufactured according to Examples 1 and 12, the average illuminance of the LED elements emitting light by applying power to each LED assembly was measured. At this time, the average illuminance of the LED assembly according to Example 1 was calculated based on the case where the average illuminance of the LED assembly according to Example 12 was 100.

division Example 1 Example 12 Whether the bulkhead is removed ○ × LED element emission evaluation 137 100 LED assembly brightness evaluation 114 100

As can be seen from Table 5 above, when the barrier rib is not removed, the driving electrode formation region is relatively less secured, and the contact area between the driving electrode and the LED device is reduced, thereby reducing the number of emitting LED devices. There was a tendency to decrease the brightness of the LED assembly.

In the present specification, preferred embodiments of the present invention have been disclosed, and although specific terms are used, these are only used in a general sense to easily explain the technical content of the present invention and help the understanding of the present invention, and to limit the scope of the present invention. It is not meant to be limiting. It will be apparent to those of ordinary skill in the art to which the present invention pertains that other modifications based on the technical spirit of the present invention can be implemented in addition to the embodiments disclosed herein. For example, those of ordinary skill in the art can see that the LED assembly manufacturing method, the LED assembly, and the display including the same according to the embodiment described with reference to FIGS. 1 to 9 can be variously modified. There will be. Accordingly, the scope of the invention should not be defined by the described embodiments, but should be defined by the technical idea described in the claims.

10: substrate
21: first mounting electrode 22: second mounting electrode
30: bulkhead 40: LED element
41: dispersion 50: insulating film
60: fixed pattern 61: negative photoresist
62: mask
71: first driving electrode 72: second driving electrode

Claims (19)

forming barrier ribs along the pattern of the mounting electrodes on a mounting electrode including a first mounting electrode patterned on a substrate and a second mounting electrode spaced apart from the first mounting electrode;
injecting a dispersion including an LED element between the partition walls; and
and applying power to the mounting electrode to self-align one end of the LED element to the first mounting electrode and the other end of the LED element to overlap the second mounting electrode, respectively. According to claim 1,
The width of the barrier rib is narrower than the width of the mounting electrode LED assembly manufacturing method. According to claim 1,
The length of the LED element is longer than a distance between the first and second mounting electrodes adjacent to each other and shorter than a distance between the adjacent barrier ribs. According to claim 1,
The barrier rib includes a portion in which the width of the barrier rib becomes wider as it approaches the mounting electrode. According to claim 1,
The material of the barrier rib includes a material having low miscibility with the dispersion. According to claim 1,
The barrier rib is an LED assembly manufacturing method comprising a fluorine-based material. According to claim 1,
Before forming the barrier rib, the LED assembly manufacturing method further comprising the step of forming an insulating film on the mounting electrode. According to claim 1,
After the self-aligning step,
The LED assembly manufacturing method further comprising the step of forming a fixing pattern for fixing the LED element on the LED element. 9. The method of claim 8,
The fixing pattern is a method of manufacturing an LED assembly that is patterned through a negative photoresist. According to claim 1,
After the self-aligning step,
LED assembly manufacturing method further comprising the step of removing the barrier rib. 11. The method of claim 10,
The method for manufacturing an LED assembly wherein the barrier rib is removed by a barrier rib removal solvent containing a fluorine-based solvent. Board;
a mounting electrode including a first mounting electrode on the substrate and a second mounting electrode spaced apart from the first mounting electrode; and
and at least one LED element arranged so that one end is positioned to overlap on the first mounting electrode and the other end is positioned to overlap on the second mounting electrode,
An LED assembly in which a ratio of the number of the LED elements overlapping both ends of the total number of LED elements per unit area of the substrate is 90% or more. 13. The method of claim 12,
The difference between the overlapping length of one end of the first mounting electrode and the LED element and the overlapping length of the second mounting electrode and the other end of the LED element is within 10% of the total length of the LED element. 13. The method of claim 12,
The LED element includes a first LED element and a second LED element,
The difference between the overlapping length of one end of the first LED element and the first mounting electrode and the overlapping length of the one end of the second LED element and the first mounting electrode is the difference between the first LED element and the second An LED assembly that is within 10% of the average length of the LED element. 13. The method of claim 12,
Further comprising an insulating film disposed on the mounting electrode to insulate between the mounting electrode and the LED element,
The LED assembly further comprising a driving electrode including a first driving electrode overlapping one end of the LED element and electrically connected to and a second driving electrode overlapping and electrically connected to the other end of the LED element. 16. The method of claim 15,
The difference between the overlapping length of the first driving electrode and one end of the LED element and the overlapping length of the second driving electrode and the other end of the LED element is within 10% of the total length of the LED element. 13. The method of claim 12,
The LED assembly further comprising a fixing pattern for fixing the LED element on the LED element. 18. The method of claim 17,
The LED element includes a first LED element and a second LED element,
The fixing pattern is an LED assembly connecting the first LED element and the second LED element. A display comprising the LED assembly according to claim 12 .

Images