KR20220087350A - Thin film using medium entropy alloy and preparation method thereof - Google Patents
Thin film using medium entropy alloy and preparation method thereof Download PDFInfo
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- 239000000956 alloy Substances 0.000 title claims abstract description 79
- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 78
- 239000010409 thin film Substances 0.000 title claims abstract description 56
- 238000002360 preparation method Methods 0.000 title description 2
- 238000000034 method Methods 0.000 claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 claims abstract description 17
- 239000011159 matrix material Substances 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims description 15
- 238000004544 sputter deposition Methods 0.000 claims description 13
- 229910052759 nickel Inorganic materials 0.000 claims description 11
- 229910052804 chromium Inorganic materials 0.000 claims description 9
- 229910052720 vanadium Inorganic materials 0.000 claims description 9
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims 1
- 239000012495 reaction gas Substances 0.000 claims 1
- 229910052723 transition metal Inorganic materials 0.000 abstract description 2
- 150000003624 transition metals Chemical class 0.000 abstract description 2
- 239000000126 substance Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000000704 physical effect Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C30/00—Alloys containing less than 50% by weight of each constituent
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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Abstract
본 발명은 고강도 중엔트로피 합금 박막 및 이의 제조방법에 관한 것으로 보다 구체적으로 본 발명의 박막은 다원계 합금 기지와 Si를 포함하며 FCC(Face Centered Cubic)계 상을 갖는 합금을 포함하여 FCC계 단상을 유지하면서 기존의 전이금속 합금보다 더 높은 강도와 고윤활성을 갖는다.The present invention relates to a high-strength medium entropy alloy thin film and a method for manufacturing the same. More specifically, the thin film of the present invention includes a multi-component alloy matrix and Si and includes an alloy having a face centered cubic (FCC)-based phase comprising an FCC-based single phase. It has higher strength and higher lubricity than existing transition metal alloys while maintaining it.
Description
본 발명은 신규의 중엔트로피 합금 소재를 이용한 박막 및 이의 제조 방법에 관한 것이다.The present invention relates to a thin film using a novel mesoentropic alloy material and a method for manufacturing the same.
우주, 항공, 자동차, 선박, 중장비의 터빈, 압축기, 기어박스 등에서부터 초소형 기어 등 초정밀 기계류에 이르기까지 모든 기계 시스템에는 상대접촉을 통해 동력을 전달하여 작동하거나 지지하는 부품이 반드시 포함된다. From space, aerospace, automobile, ship, and heavy equipment turbines, compressors, and gearboxes to ultra-precision machinery such as miniature gears, all mechanical systems must include parts that operate or support them by transmitting power through relative contact.
이런 부품들 간의 마찰과 마모되는 부분에는 고경도와 동시에 윤활성을 가지는 표면 특성이 매우 중요하다. 따라서, 이러한 부품에 적용되는 기존 사용재료의 경도, 인성 등 기본적인 기계적 성질 요구를 충족함과 동시에, 사용 환경에 맞춰 고기능성을 적절히 조절할 수 있도록 하는 신소재 개발 기술을 요구하고 있다.Surface properties with high hardness and lubricity are very important for friction and wear between these parts. Therefore, there is a demand for a new material development technology that satisfies the basic mechanical property requirements such as hardness and toughness of the existing materials applied to these parts, and allows high functionality to be appropriately adjusted according to the usage environment.
코팅용 모합금의 주 적용분야인 압축기 베어링 표면 특성 또한 고강성와 고경도의 기본적인 특성을 요구함과 동시에 앞서 언급한 특성과 개념적으로 서로 상충되는 저마찰계수와 고윤활성을 필요로 한다. Compressor bearing surface characteristics, which are the main application fields of the master alloy for coating, also require basic characteristics of high rigidity and high hardness, and at the same time require low friction coefficient and high lubricity, which are conceptually contradictory to the above-mentioned characteristics.
이러한 특성을 모두 충족시키기 위해서 통상적으로 복합재료 및 복합구조화를 사용하고 있고, 금속재료의 측면에서는 고경도-고내식성의 비정질을 기지로 결정질 강화상을 포함시키도록 개발하고 있다. 하지만 비정질 형성에 필요한 제조 공정 조건이 일반적인 대량 생산에는 적합하지 않고 복잡한 부품으로의 형상 가공이 매우 어렵다는 큰 단점이 있다.In order to satisfy all these characteristics, composite materials and composite structures are usually used, and in terms of metal materials, high hardness-high corrosion resistance amorphous bases are being developed to include crystalline reinforced phases. However, the manufacturing process conditions required for amorphous formation are not suitable for general mass production, and there is a big disadvantage that it is very difficult to shape a complex part.
본 발명은 상술한 문제점을 해결하기 위한 것으로, 본 발명의 목적은 중엔트로피 합금을 이용한 박막 및 이의 제조방법을 제공하는 것이다.SUMMARY OF THE INVENTION The present invention is to solve the above problems, and an object of the present invention is to provide a thin film using a medium entropy alloy and a method for manufacturing the same.
본 발명의 목적들은 이상에서 언급한 목적으로 제한되지 않으며, 언급되지 않은 본 발명의 다른 목적 및 장점들은 하기의 설명에 의해서 이해될 수 있고, 본 발명의 실시예에 의해 보다 분명하게 이해될 것이다. 또한, 본 발명의 목적 및 장점들은 특허 청구 범위에 나타낸 수단 및 그 조합에 의해 실현될 수 있음을 쉽게 알 수 있을 것이다.The objects of the present invention are not limited to the above-mentioned objects, and other objects and advantages of the present invention not mentioned may be understood by the following description, and will be more clearly understood by the examples of the present invention. Further, it will be readily apparent that the objects and advantages of the present invention may be realized by the means and combinations thereof indicated in the claims.
상술한 바와 같은 과제를 해결하기 위한 본 발명에 따른 중엔트로피 합금 박막은 다원계 합금 기지 및 Si를 포함하고, 상기 다원계 합금 기지는 Cr, Co, Ni 및 V 가운데 2종 이상을 포함하며, FCC(Face Centered Cubic)계 상을 갖는 합금을 포함하고, 기재 상에 형성된 박막(Thin film)의 형태를 갖는다.The medium entropy alloy thin film according to the present invention for solving the above-described problems includes a multi-component alloy matrix and Si, and the multi-component alloy matrix includes two or more of Cr, Co, Ni and V, FCC It includes an alloy having a (Face Centered Cubic)-based phase, and has the form of a thin film formed on a substrate.
본 발명의 다른 일실시예에 따른 중엔트로피 합금 박막의 제조방법은 모재를 스퍼터링 장치에 로딩하는 단계; 및 상기 장치 내부로 Si를 포함하는 반응 가스를 투입하면서 타겟을 스퍼터링하여 상기 모재 표면에 박막을 형성하는 단계;를 포함하고, 상기 타겟은 Cr, Co, Ni 및 V 가운데 2종 이상을 포함하는 합금 타겟이다.A method for manufacturing a medium entropy alloy thin film according to another embodiment of the present invention comprises: loading a base material into a sputtering device; and forming a thin film on the surface of the base material by sputtering a target while injecting a reactive gas containing Si into the device, wherein the target is an alloy containing two or more of Cr, Co, Ni and V is the target
바람직하게는, 본 발명의 일실시예에 따른 중엔트로피 합금 박막은 하기 화학식 1로 표시되며, FCC(Face Centered Cubic)계 단상을 갖는 합금을 포함할 수 있다.Preferably, the medium entropy alloy thin film according to an embodiment of the present invention is represented by the following Chemical Formula 1, and may include an alloy having a Face Centered Cubic (FCC)-based single phase.
[화학식 1][Formula 1]
CrCoNiSix CrCoNiSix
(O<x≤0.4의 조건을 만족한다)(It satisfies the condition of O<x≤0.4)
또한 바람직하게는 상기 x는 0.15≤x≤0.3의 조건을 만족할 수 있다.Also preferably, x may satisfy the condition of 0.15≤x≤0.3.
아울러 본 발명의 일실시예에 따른 중엔트로피 합금 박막은 하기 화학식 2로 표시되며, FCC(Face Centered Cubic)계 단상을 갖는 합금을 포함할 수 있다.In addition, the medium entropy alloy thin film according to an embodiment of the present invention is represented by the following Chemical Formula 2, and may include an alloy having a Face Centered Cubic (FCC)-based single phase.
[화학식 2][Formula 2]
CoNiSix CoNiSi x
(O<x≤0.25의 조건을 만족한다)(O<x≤0.25 satisfies the condition)
또한 본 발명의 일실시예에 따른 중엔트로피 합금 박막은 하기 화학식 3으로 표시되며, FCC(Face Centered Cubic)계 단상을 갖는 합금을 포함할 수 있다.In addition, the medium entropy alloy thin film according to an embodiment of the present invention is represented by the following Chemical Formula 3, and may include an alloy having a Face Centered Cubic (FCC)-based single phase.
[화학식 3][Formula 3]
VCoNiSix VCoNiSi x
(O<x≤0.1의 조건을 만족한다)(O<x≤0.1 satisfies the condition)
본 발명은 상온과 고온에서 기계적 특성이 향상된 신규의 중엔트로피 합금 박막을 제공할 수 있다.The present invention can provide a novel medium entropy alloy thin film with improved mechanical properties at room temperature and high temperature.
또한, 본 발명에 따른 중엔트로피 합금 박막은 FCC계 단상을 유지하면서 기존의 전이금속 합금보다 더 높은 강도를 갖는다. In addition, the medium entropy alloy thin film according to the present invention has higher strength than the conventional transition metal alloy while maintaining the FCC-based single phase.
또한, 본 발명에 따른 중엔트로피 합금 박막은 저마찰계수와 고윤활성을 갖는다.In addition, the medium entropy alloy thin film according to the present invention has a low coefficient of friction and high lubricity.
아울러, 본 발명의 중엔트로피 합금 박막의 제조방법은 중엔트로피 합금의 미세 조직을 변화시켜 강화 효과를 극대화시킬 수 있다.In addition, the method for manufacturing a medium entropy alloy thin film of the present invention can maximize the strengthening effect by changing the microstructure of the medium entropy alloy.
상술한 효과와 더불어 본 발명의 구체적인 효과는 이하 발명을 실시하기 위한 구체적인 사항을 설명하면서 함께 기술한다.In addition to the above-described effects, the specific effects of the present invention will be described together while describing specific details for carrying out the invention below.
도 1 내지 3은 본 발명의 실시예에 따른 본 발명의 실시예에 따른 박막의 물성 평가 결과를 도시한 그래프이다.1 to 3 are graphs showing results of evaluation of physical properties of a thin film according to an embodiment of the present invention according to an embodiment of the present invention.
전술한 목적, 특징 및 장점은 첨부된 도면을 참조하여 상세하게 후술되며, 이에 따라 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자가 본 발명의 기술적 사상을 용이하게 실시할 수 있을 것이다. 본 발명을 설명함에 있어서 본 발명과 관련된 공지 기술에 대한 구체적인 설명이 본 발명의 요지를 불필요하게 흐릴 수 있다고 판단되는 경우에는 상세한 설명을 생략한다. 이하, 본 발명에 따른 바람직한 실시예를 상세히 설명하기로 한다. The above-described objects, features and advantages will be described below in detail with reference to the accompanying drawings, and accordingly, those of ordinary skill in the art to which the present invention pertains will be able to easily implement the technical idea of the present invention. In describing the present invention, if it is determined that a detailed description of a known technology related to the present invention may unnecessarily obscure the gist of the present invention, the detailed description will be omitted. Hereinafter, preferred embodiments according to the present invention will be described in detail.
명세서 전체에서, 특별히 반대되는 기재가 없는 한, 각 구성요소는 단수일 수도 있고 복수일 수도 있다. Throughout the specification, unless otherwise stated, each element may be singular or plural.
본 명세서에서 사용되는 단수의 표현은 문맥상 명백하게 다르게 뜻하지 않는 한, 복수의 표현을 포함한다. 본 출원에서, "구성된다" 또는 "포함한다" 등의 용어는 명세서 상에 기재된 여러 구성 요소들, 또는 여러 단계들을 반드시 모두 포함하는 것으로 해석되지 않아야 하며, 그 중 일부 구성 요소들 또는 일부 단계들은 포함되지 않을 수도 있고, 또는 추가적인 구성 요소 또는 단계들을 더 포함할 수 있는 것으로 해석되어야 한다. As used herein, the singular expression includes the plural expression unless the context clearly dictates otherwise. In the present application, terms such as “consisting of” or “comprising” should not be construed as necessarily including all of the various components or various steps described in the specification, some of which components or some steps are It should be construed that it may not include, or may further include additional components or steps.
이하에서는, 본 발명에 따른 중엔트로피 합금 박막 및 이의 제조방법에 대해 설명하도록 한다.Hereinafter, a medium entropy alloy thin film and a method for manufacturing the same according to the present invention will be described.
중엔트로피 합금 박막Medium entropy alloy thin film
FCC 계열 고엔트로피 및 중엔트로피 합금의 낮은 강도 특성을 보완하기 위해, 본 발명은 종래의 합금에 Si를 도핑하고 도핑량을 조절하여 기계적 특성이 우수한 신규의 합금 박막을 제공한다.In order to compensate for the low strength characteristics of the FCC series high-entropy and medium-entropy alloys, the present invention provides a novel alloy thin film having excellent mechanical properties by doping Si in the conventional alloy and controlling the doping amount.
본 발명에 따른 중엔트로피 합금 박막은 다원계 합금 기지 및 Si를 포함하고, 상기 다원계 합금 기지는 Cr, Co, Ni 및 V 가운데 2종 이상을 포함하며, FCC(Face Centered Cubic)계 상을 갖는 합금을 포함한다.The medium entropy alloy thin film according to the present invention includes a multi-component alloy matrix and Si, and the multi-component alloy matrix includes two or more of Cr, Co, Ni and V, and has a Face Centered Cubic (FCC)-based phase. including alloys.
본 발명의 중엔트로피 합금 박막은 종래와 같이 다원계 합금 기지를 포함하고 상기 합금 기지는 Cr, Co, Ni 및 V 가운데 2종 이상을 포함한다. 그리고, 본 발명의 합금은 상기 합금 기지와 더불어 Si를 포함한다. 본 발명의 합금은 종래 합금에 상기 Si가 도핑되어 격자 뒤틀림이 증가되고 FCC계 단상을 유지할 수 있으며 경도와 강도가 증가하였다.The medium entropy alloy thin film of the present invention includes a multi-component alloy matrix as in the prior art, and the alloy matrix includes two or more of Cr, Co, Ni and V. And, the alloy of the present invention includes Si together with the alloy matrix. In the alloy of the present invention, Si is doped into the conventional alloy to increase lattice distortion, maintain FCC-based single phase, and increase hardness and strength.
바람직하게는, 본 발명의 합금 박막은 상기 2종 이상의 합금 기지를 동일 원자비(at%)로 포함할 수 있다. 또한 본 발명의 합금은 FCC계 단상을 갖는 것이 바람직하다.Preferably, the alloy thin film of the present invention may include the two or more kinds of alloy matrix in the same atomic ratio (at%). In addition, it is preferable that the alloy of the present invention has an FCC-based single phase.
보다 구체적으로, 본 발명의 일실시예에 따른 중엔트로피 합금 박막은 하기 화학식 1로 표시되며 FCC(Face Centered Cubic)계 단상을 갖는 합금을 포함할 수 있다.More specifically, the medium entropy alloy thin film according to an embodiment of the present invention may include an alloy represented by the following Chemical Formula 1 and having a Face Centered Cubic (FCC)-based single phase.
[화학식 1][Formula 1]
CrCoNiSix CrCoNiSix
(O<x≤0.4의 조건을 만족한다)(It satisfies the condition of O<x≤0.4)
또한 바람직하게는 상기 x는 0.15≤x≤0.3의 조건을 만족할 수 있다.Also preferably, x may satisfy the condition of 0.15≤x≤0.3.
다시 말해, 상기 화학식 1의 Cr, Co, Ni 및 Si는 1:1:1:x의 비를 갖는다.In other words, Cr, Co, Ni, and Si in Formula 1 have a ratio of 1:1:1:x.
아울러 본 발명의 일실시예에 따른 중엔트로피 합금 박막은 하기 화학식 2로 표시되며 FCC(Face Centered Cubic)계 단상을 갖는 합금을 포함할 수 있다.In addition, the medium entropy alloy thin film according to an embodiment of the present invention may include an alloy represented by the following Chemical Formula 2 and having a Face Centered Cubic (FCC)-based single phase.
[화학식 2][Formula 2]
CoNiSix CoNiSi x
(O<x≤0.25의 조건을 만족한다)(O<x≤0.25 satisfies the condition)
다시 말해, 상기 화학식 2의 Co, Ni 및 Si는 1:1:x의 비를 갖는다.In other words, Co, Ni, and Si in Formula 2 have a ratio of 1:1:x.
또한 본 발명의 일실시예에 따른 중엔트로피 합금 박막은 하기 화학식 3으로 표시되며 FCC(Face Centered Cubic)계 단상을 갖는 합금을 포함할 수 있다.In addition, the medium entropy alloy thin film according to an embodiment of the present invention may include an alloy represented by the following Chemical Formula 3 and having a Face Centered Cubic (FCC)-based single phase.
[화학식 3][Formula 3]
VCoNiSix VCoNiSi x
(O<x≤0.1의 조건을 만족한다)(O<x≤0.1 satisfies the condition)
다시 말해, 상기 화학식 3의 V, Co, Ni 및 Si는 1:1:1:x의 비를 갖는다.In other words, V, Co, Ni and Si in Formula 3 have a ratio of 1:1:1:x.
중엔트로피 합금 박막의 제조방법Method for manufacturing medium entropy alloy thin film
다음으로, 본 발명에 따른 중엔트로피 합금 박막의 제조방법은, 모재를 스퍼터링 장치에 로딩하는 단계; 및 상기 장치 내부로 Si를 포함하는 반응 가스를 투입하면서 타겟을 스퍼터링하여 상기 모재 표면에 박막을 형성하는 단계;를 포함하고, 상기 타겟은 Cr, Co, Ni 및 V 가운데 2종 이상을 포함하는 합금 타겟인 것을 구성상 특징으로 한다.Next, the method for manufacturing a medium entropy alloy thin film according to the present invention comprises the steps of: loading a base material into a sputtering apparatus; and forming a thin film on the surface of the base material by sputtering a target while injecting a reactive gas containing Si into the device, wherein the target is an alloy containing two or more of Cr, Co, Ni and V It is characterized in that it is a target.
먼저 본 발명의 제조방법은 박막을 형성시키기 위한 모재를 스퍼터링 장치에 로딩한다. 박막이 코팅되는 모재는 구조용 재료로 사용될 수 있는 모든 재료를 포함할 수 있다. 다만, 다른 재료보다는 금속이 바람직할 수 있고, 이는 금속 고유의 높은 열전도도에 의한 급속한 냉각이 가능하여 박막의 기지인 비정질 형성을 촉진시킬 수 있기 때문이다.First, in the manufacturing method of the present invention, a base material for forming a thin film is loaded into a sputtering apparatus. The base material on which the thin film is coated may include any material that can be used as a structural material. However, metal may be preferable over other materials, because rapid cooling is possible due to the high thermal conductivity inherent in the metal, thereby promoting the formation of an amorphous film, which is the base of the thin film.
다음으로, 본 발명은 상기 장치 내부로 Si를 포함하는 반응 가스를 투입하면서 타겟을 스퍼터링하여 상기 모재 표면에 박막을 형성하는 단계를 포함한다. Next, the present invention includes the step of forming a thin film on the surface of the base material by sputtering a target while injecting a reactive gas containing Si into the device.
본 발명에 사용되는 스퍼터링 방식은 특별히 제한되지 않으며, 물리적 화학 증착법이나 화학적 기상 증착법, PECVD 등이 적용될 수 있다.The sputtering method used in the present invention is not particularly limited, and physical chemical vapor deposition, chemical vapor deposition, PECVD, or the like may be applied.
또한 본 발명에서 Si의 첨가는 외부에서 기상을 통해 첨가될 수 있다. 보다 구체적으로 물리적 화학 증착법이나 화학적 기상 증착법에서 HMDSO(hexamethyldisiloxane, O[Si(CH3)3]2)과 같은 휘발성 유기 실리콘 화합물 형태로 제공될 수 있다.In addition, in the present invention, the addition of Si may be added through the gas phase from the outside. More specifically, it may be provided in the form of a volatile organic silicon compound such as hexamethyldisiloxane (HMDSO, O[Si(CH 3 ) 3 ] 2 ) in a physical chemical vapor deposition method or a chemical vapor deposition method.
예로서 반응성 스퍼터링은 DC 스퍼터링 방식에서 반응에 필요한 원하는 성분의 가스를 넣어주어 스퍼터링하는 방식이다. 예를 들면 Si의 첨가는 Si을 포함하는 가스(예를 들면 상기 HMDSO 가스)를 반응성 가스로 넣어주어 성막되는 코팅 내로 Si을 첨가할 수 있다.For example, reactive sputtering is a method of sputtering by putting a gas of a desired component necessary for a reaction in a DC sputtering method. For example, the addition of Si may be performed by introducing a gas containing Si (eg, the HMDSO gas) as a reactive gas to add Si into the coating being deposited.
이 때 형성되는 막의 성분 화학양론비는 주로 반응성 가스의 양으로 조절할 수 있다. 보다 구체적으로 통상 스퍼터링 증착 장비의 반응성 가스의 각각의 라인에는 질량 유량계(mass flow controller, MFC)가 장착되는데, 이 MFC를 조절함으로써 원하는 성분 및/또는 조성범위를 조절이 가능하다.At this time, the component stoichiometric ratio of the film to be formed can be mainly controlled by the amount of the reactive gas. More specifically, a mass flow controller (MFC) is mounted on each line of the reactive gas of the conventional sputtering deposition equipment, and a desired component and/or composition range can be adjusted by controlling the MFC.
합금 타겟의 경우, Cr, Co, Ni 및 V 가운데 2종 이상의 합금 기지를 이용하고, 상기 2종 이상의 합금 기지를 동일 원자비(at%)로 포함하는 것이 바람직하며, 또한 본 발명의 합금은 FCC계 단상을 갖는 것이 바람직하다. 상기 합금의 바람직한 원자% 비는 상술한 바와 같다.In the case of an alloy target, it is preferable to use two or more kinds of alloy bases among Cr, Co, Ni and V, and to include the two or more kinds of alloy bases in the same atomic ratio (at%), and the alloy of the present invention is FCC It is preferable to have a step phase. The preferred atomic % ratio of the alloy is as described above.
이하에서는 본 발명의 바람직한 실시예를 통하여 본 발명을 더욱 구체적으로 설명한다.Hereinafter, the present invention will be described in more detail through preferred embodiments of the present invention.
<실시예><Example>
실시예의 제조 및 물성 평가Preparation of Examples and Evaluation of Physical Properties
동일한 원자비%를 갖는 합금 기지 원소를 이용한 타겟을 준비하였다. 상기 타겟을 이용하여 스퍼터링법으로 박막을 성막하였다. 모재는 알루미늄을 이용하였다.A target using an alloy matrix element having the same atomic ratio was prepared. A thin film was formed by sputtering using the target. Aluminum was used as the base material.
코팅 조건과 박막의 물성 평가 결과는 아래 표와 같다.The coating conditions and the evaluation results of the properties of the thin film are shown in the table below.
위 표 1을 참조하면, 본 발명의 실시예들에 따른 박막의 코팅 공정 조건이 기재되어 있다. 아울러, 표 2를 참조하면, 본 발명의 실시예들에 따른 박막의 물성 평가 결과가 기재되어 있다. 또한, 도 1 내지 3을 참조하면, 본 발명의 실시예에 따른 박막의 물성 평가 결과를 도시한 그래프를 확인할 수 있다.Referring to Table 1 above, the coating process conditions of the thin film according to the embodiments of the present invention are described. In addition, referring to Table 2, the results of evaluation of physical properties of thin films according to embodiments of the present invention are described. In addition, referring to FIGS. 1 to 3 , graphs showing the results of evaluation of physical properties of the thin film according to an embodiment of the present invention can be confirmed.
이처럼 본 발명은 고경도-고윤활성을 갖는 중엔트로피 합금을 이용한 박막을 제공할 수 있음을 알 수 있다. As such, it can be seen that the present invention can provide a thin film using a medium entropy alloy having high hardness-high lubricity.
이상과 같이 본 발명에 대해서 바람직한 실시예를 기초로 설명하였으나, 본 명세서에 개시된 실시예에 의해 본 발명이 한정되는 것은 아니며, 본 발명의 기술사상의 범위 내에서 통상의 기술자에 의해 다양한 변형이 이루어질 수 있음은 자명하다. 아울러 앞서 본 발명의 실시 예를 설명하면서 본 발명의 구성에 따른 작용 효과를 명시적으로 기재하여 설명하지 않았을 지라도, 해당 구성에 의해 예측 가능한 효과 또한 인정되어야 함은 당연하다.As described above, the present invention has been described based on preferred embodiments, but the present invention is not limited by the embodiments disclosed herein, and various modifications may be made by those skilled in the art within the scope of the technical spirit of the present invention. It is self-evident that In addition, although the effects according to the configuration of the present invention have not been explicitly described and described while describing the embodiments of the present invention, it is natural that the effects predictable by the configuration should also be recognized.
Claims (11)
기재 상에 형성된 박막(Thin film)의 형태를 갖는
중엔트로피 합금 박막.
It includes a multi-component alloy matrix and Si, and the multi-component alloy matrix includes two or more of Cr, Co, Ni and V, and includes an alloy having a Face Centered Cubic (FCC)-based phase,
having the form of a thin film formed on the substrate
Medium entropy alloy thin film.
상기 합금은
하기 화학식 1로 표시되며
FCC(Face Centered Cubic)계 단상을 갖는
중엔트로피 합금 박막.
[화학식 1]
CrCoNiSix
(O<x≤0.4의 조건을 만족한다)
The method of claim 1,
the alloy is
It is represented by the following formula (1)
With FCC (Face Centered Cubic) phase
Medium entropy alloy thin film.
[Formula 1]
CrCoNiSix
(It satisfies the condition of O<x≤0.4)
상기 x는
0.15≤x≤0.3의 조건을 만족하는
중엔트로피 합금 박막.
3. The method of claim 2,
where x is
It satisfies the condition of 0.15≤x≤0.3
Medium entropy alloy thin film.
상기 합금은
하기 화학식 2로 표시되며
FCC(Face Centered Cubic)계 단상을 갖는
중엔트로피 합금 박막.
[화학식 2]
CoNiSix
(O<x≤0.25의 조건을 만족한다)
The method of claim 1,
the alloy is
It is represented by the following formula (2)
With FCC (Face Centered Cubic) phase
Medium entropy alloy thin film.
[Formula 2]
CoNiSi x
(O<x≤0.25)
상기 합금은
하기 화학식 3으로 표시되며
FCC(Face Centered Cubic)계 단상을 갖는
중엔트로피 합금 박막.
[화학식 3]
VCoNiSix
(O<x≤0.1의 조건을 만족한다)
The method of claim 1,
the alloy is
It is represented by the following formula (3)
With FCC (Face Centered Cubic) phase
Medium entropy alloy thin film.
[Formula 3]
VCoNiSi x
(It satisfies the condition of O<x≤0.1)
상기 장치 내부로 Si를 포함하는 반응 가스를 투입하면서 타겟을 스퍼터링하여 상기 모재 표면에 박막을 형성하는 단계;를 포함하고,
상기 타겟은 Cr, Co, Ni 및 V 가운데 2종 이상을 포함하는 합금 타겟인,
중엔트로피 합금 박막의 제조방법.
Loading the base material into the sputtering device; and
Forming a thin film on the surface of the base material by sputtering a target while introducing a reactive gas containing Si into the device;
The target is an alloy target comprising two or more of Cr, Co, Ni and V,
Method for manufacturing a medium entropy alloy thin film.
상기 박막은
하기 화학식 1로 표시되며
FCC(Face Centered Cubic)계 단상을 갖는
중엔트로피 합금 박막의 제조방법.
[화학식 1]
CrCoNiSix
(O<x≤0.4의 조건을 만족한다)
7. The method of claim 6,
The thin film
It is represented by the following formula (1)
With FCC (Face Centered Cubic) phase
Method for manufacturing a medium entropy alloy thin film.
[Formula 1]
CrCoNiSix
(It satisfies the condition of O<x≤0.4)
상기 x는
0.15≤x≤0.3의 조건을 만족하는
중엔트로피 합금 박막의 제조방법.
8. The method of claim 7,
where x is
It satisfies the condition of 0.15≤x≤0.3
Method for manufacturing a medium entropy alloy thin film.
상기 박막은
하기 화학식 2로 표시되며
FCC(Face Centered Cubic)계 단상을 갖는
중엔트로피 합금 박막의 제조방법.
[화학식 2]
CoNiSix
(O<x≤0.25의 조건을 만족한다)
7. The method of claim 6,
The thin film
It is represented by the following formula (2)
With FCC (Face Centered Cubic) phase
Method for manufacturing a medium entropy alloy thin film.
[Formula 2]
CoNiSi x
(O<x≤0.25)
상기 박막은
하기 화학식 1로 표시되며
FCC(Face Centered Cubic)계 단상을 갖는
중엔트로피 합금 박막의 제조방법.
[화학식 3]
VCoNiSix
(O<x≤0.1의 조건을 만족한다)
7. The method of claim 6,
The thin film
It is represented by the following formula (1)
With FCC (Face Centered Cubic) phase
Method for manufacturing a medium entropy alloy thin film.
[Formula 3]
VCoNiSi x
(It satisfies the condition of O<x≤0.1)
상기 Si를 포함하는 반응 가스는
HMDSO(헥사메틸디실록산)을 이용하는
중엔트로피 합금 박막의 제조방법.7. The method of claim 6,
The reaction gas containing Si is
HMDSO (hexamethyldisiloxane)
Method for manufacturing a medium entropy alloy thin film.
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| KR101910744B1 (en) * | 2017-07-26 | 2018-10-22 | 포항공과대학교 산학협력단 | Medium-entropy alloys with excellent cryogenic properties |
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| Elastic moduli and thermal expansion coefficients of medium-entropy subsystems of the CrMnFeCoNi high-entropy alloy, G. Laplanche et al., Journal of Alloys and Compounds 746 (2018) pp. 244-255, Available online 23 February 2018* * |
| Medium entropy alloy CoCrNi coatings: Enhancing hardness and damagetolerance through a nanotwinned structuring, Fuyang Caoa et al., Surface & Coatings Technology 335 (2018) pp. 257-264, Available online 10 December 2017* * |
| Novel Si-added CrCoNi medium entropy alloys achieving the breakthrough of strength-ductility trade-off, H. Chang et al., Materials and Design 197 (2021) 109202, Available online 2 October 2020* * |
| Vanadium is an optimal element for strengthening in both fcc and bcc high-entropy alloys, Binglun Yin et al., Acta Materialia, 188 (2020) pp.486-491, Available online 6 February 2020* * |
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| KR102607291B1 (en) | 2023-11-29 |
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| KR20220087348A (en) | 2022-06-24 |
| KR20220087349A (en) | 2022-06-24 |
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