KR20220082463A - Composition for Hard Mask - Google Patents

Abstract

The present invention provides a composition for a hard mask comprising a solvent and a polymer having a specific structure including a heteroarylene group and a hydroxyl group connected by a C-N bond. The composition for a hard mask according to the present invention can secure etch resistance, chemical resistance and solubility at the same time.

Description

Composition for Hard Mask

The present invention relates to a composition for a hard mask, and more particularly, to a composition for a hard mask capable of securing etch resistance, chemical resistance and solubility at the same time.

In the fields of semiconductor manufacturing, microelectronics, etc., as the degree of integration of structures such as circuits, wirings, and insulating patterns is continuously improved, a photolithography process technology for fine patterning of the structures is also developed.

In general, a photoresist layer is formed by coating a photoresist on an etch target layer, and a photoresist pattern is formed through exposure and development processes. Then, a predetermined pattern may be formed by partially removing the etch target layer using the photoresist pattern as an etch mask. After image transfer to the etch target layer is performed, the photoresist pattern may be removed through an ashing and/or strip process.

As the pattern becomes finer, an anti-reflective coating (ARC) layer is formed between the etch target layer and the photoresist layer to suppress light reflection in the exposure process to increase photolithography resolution. can In addition, a resist lower layer, ie, a hardmask layer, may be added between the antireflection coating layer and the etch target layer.

The hardmask needs to have sufficient etch resistance (or etch resistance), chemical resistance, and heat resistance for a high-temperature etching process. In addition, the hard mask preferably satisfies characteristics for being formed to a uniform thickness by a spin-on coating process, for example, solubility and flatness.

Republic of Korea Patent Publication No. 10-2010-0082844

An object of the present invention is to provide a composition for a hard mask capable of securing etch resistance, chemical resistance and solubility at the same time.

On the other hand, the present invention provides a composition for a hard mask comprising a polymer and a solvent represented by the following formula (1) or (2).

[Formula 1]

[Formula 2]

In the above formula,

Ar ¹ is a substituted or unsubstituted C3 to C50 heteroarylene group containing a nitrogen atom and the nitrogen atom is bonded to Ar ² ,

Ar ² and Ar ³ are each independently a substituted or unsubstituted C6 to C50 arylene group,

R ¹ to R ² are each independently hydrogen or a C1 to C6 alkyl group,

R ³ to R ⁴ are each independently hydrogen, a C1 to C6 alkyl group, a hydroxy group, an amino group or a thiol group,

n and m are each independently an integer from 3 to 30.

In one embodiment of the present invention, Ar ¹ may be derived from a compound represented by the following formula (3).

[Formula 3]

In the above formula,

R ³ and R ⁴ are each independently hydrogen, a C1 to C6 alkyl group, a hydroxy group, an amino group or a thiol group,

a and b are each independently an integer of 0 to 5,

c and d are each independently an integer from 0 to 5;

In one embodiment of the present invention, Ar ² and Ar ³ are each independently benzene, biphenyl, naphthalene, anthracene, phenanthrene, chrysene, pyrene or 4,6a-dihydrofluoranthene (4, It may include an arylene group derived from 6a-dihydrofluoranthene).

In one embodiment of the present invention, R ¹ and R ² may be hydrogen.

In one embodiment of the present invention, the polymer may be represented by the following Chemical Formula 1a, 2a or 2b.

[Formula 1a]

[Formula 2a]

[Formula 2b]

In the above formula,

n and m are each independently an integer from 3 to 30.

In one embodiment of the present invention, the polymer may have a weight average molecular weight of 1,000 to 20,000.

The composition for a hard mask according to an embodiment of the present invention may further include one or more selected from the group consisting of a crosslinking agent, a catalyst, and a surfactant.

The composition for a hard mask according to the present invention can secure etch resistance, chemical resistance and solubility at the same time.

Hereinafter, the present invention will be described in more detail.

One embodiment of the present invention relates to a composition for a hard mask comprising a polymer (A) having a specific structure including a heteroarylene group and a hydroxyl group connected by a C-N bond and a solvent (B).

The composition for a hard mask may be applied between, for example, a photoresist layer and an etch target layer to form a hard mask layer used as a resist lower layer. The hard mask layer may be partially removed through a photoresist pattern to form a hard mask, and the hard mask may be used as an additional etching mask.

The hardmask layer or hardmask may be used as, for example, a spin-on hardmask (SOH).

Polymer (A)

In one embodiment of the present invention, the polymer (A) is a copolymer of an aromatic compound (eg, a condensation polymer), and the carbon content (C-contents: C%) per unit molecule increases to improve etch resistance and Heat resistance can be improved. In particular, the polymer (A) has a structure in which a nitrogen (N) atom-containing heteroarylene group is connected to an adjacent arylene group by a C-N bond, thereby exhibiting high solubility. In addition, by including a hydroxyl group in the molecule, solubility can be further improved, and crosslinking properties after post-baking are also improved, thereby increasing etch resistance and chemical resistance.

The N-heteroaryl group of the present invention promotes intermolecular interaction through oxidative coupling, so that packing properties may be improved, and consequently, etch resistance and heat resistance may be improved. In other words, the N-heteroaryl group of the present invention is affected by oxidative coupling by oxygen in the air during a baking process at a high temperature. By such oxidative coupling, polymers may form a stack structure while bonding, and thus etch resistance and heat resistance may be improved.

The polymer (A) is a polymer represented by the following formula (1) or (2).

[Formula 1]

[Formula 2]

In the above formula,

Ar ¹ is a substituted or unsubstituted C3 to C50 heteroarylene group containing a nitrogen atom and the nitrogen atom is bonded to Ar ² ,

Ar ² and Ar ³ are each independently a substituted or unsubstituted C6 to C50 arylene group,

R ¹ to R ² are each independently hydrogen or a C1 to C6 alkyl group,

R ³ to R ⁴ are each independently hydrogen, a C1 to C6 alkyl group, a hydroxy group, an amino group or a thiol group,

n and m are each independently an integer from 3 to 30.

As used herein, the C3 to C50 heteroarylene group includes both divalent heteroaromatic groups and partially reduced derivatives thereof. In the present specification, the heteroaromatic group is a simple or fused cyclic having 3 to 50 carbon atoms, and essentially includes nitrogen, and optionally further includes oxygen or sulfur. Examples of representative heteroarylene groups include pyridinylene, indolylene, quinolinylene, imidazolinylene, oxazolylene, thiazolylene, and the like. However, the present invention is not limited thereto. The heteroarylene group may be directly bonded to an adjacent functional group. It may be bonded through a linking group such as C1-C6 alkylene, C1-C6 oxyalkylene, C1-C6 thioalkylene, oxygen or sulfur.

As used herein, the C6 to C50 arylene group includes both divalent aromatic groups and partially reduced derivatives thereof. The aromatic group is a simple or fused cyclic having 6 to 50 carbon atoms. Representative examples of arylene groups include phenylene, naphthylene, tetrahydronaphthylene, anthracenylene, phenanthrenylene, chrysenylene, pyrenylene, 4,6a-dihydrofluoranthenylene, fluorenylene, diphenyl fluorenylene, dinaphthalenylfluorenylene, carbazolylene, biphenylene, and the like, but is not limited thereto. The arylene group may be directly bonded to an adjacent functional group. It may be bonded through a linking group such as a C1-C6 alkylene group, a C1-C6 oxyalkylene group, a C1-C6 thioalkylene group, oxygen, or sulfur.

As used herein, the C1-C6 alkylene group means a straight-chain or branched divalent hydrocarbon composed of 1 to 6 carbon atoms, and includes, for example, methylene, ethylene, propylene, butylene, etc., but is limited thereto not.

As used herein, the C1-C6 oxyalkylene group refers to a functional group in which at least one of the chain carbons is substituted with oxygen in a linear or branched divalent hydrocarbon having 1 to 6 carbon atoms, for example, oxymethylene, oxyethylene, oxypropylene, oxybutylene, oxypentylene, oxyhexylene, and the like.

As used herein, the C1-C6 thioalkylene group refers to a straight-chain or branched divalent hydrocarbon having 1 to 6 carbon atoms substituted with sulfur, for example, thiomethylene, thioethylene, thiopropylene, thiobutyl Ren and the like are included, but are not limited thereto.

As used herein, the C1 to C6 alkyl group refers to a linear or branched monovalent hydrocarbon having 1 to 6 carbon atoms, for example, methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl , tert-butyl, sec-butyl, 1-methyl-butyl, 1-ethyl-butyl, n-pentyl, isopentyl, neopentyl, tert-pentyl, n-hexyl, 1-methylpentyl, 2-methylpentyl, 4 -methyl-2-pentyl, 3,3-dimethylbutyl, 2-ethylbutyl, and the like are included, but are not limited thereto.

As used herein, the term 'substituted' means that one or more hydrogens in the compound include, but are not limited to, a hydroxy group, a C1 to C20 alkyl group, a C2 to C20 alkenyl group, a C2 to C20 alkynyl group, C3 to C15 cycloalkyl group, C3 to C15 cycloalkenyl group, C2 to C14 heterocycloalkyl group, C2 to C14 heterocycloalkyloxy group, C1 to C20 haloalkyl group, C1 to C20 alkoxy group, C1 to C20 Thioalkoxy group, C6 to C30 aryl group, C3 to C30 heteroaryl group, C7 to C31 arylalkyl group, C4 to C31 heteroarylalkyl group, acyl group, thio group, halogen (F, Br, Cl , or I), an amino group, an alkoxycarbonyl group, a carboxy group, a carbamoyl group, a cyano group, a nitro group, an azido group, an amidino group, a hydrazino group, a hydrazono group, one or more substituents selected from the group consisting of a sulfonic acid group and a phosphate group means replaced with

In one embodiment of the present invention, Ar ¹ may be derived from a compound represented by the following formula (3).

[Formula 3]

In the above formula,

R ³ and R ⁴ are each independently hydrogen, a C1 to C6 alkyl group, a hydroxyl group, an amino group or a thiol group,

a and b are each independently an integer of 0 to 5,

c and d are each independently an integer from 0 to 5;

For example, Ar ¹ may be derived from a compound represented by the following Chemical Formula 3a.

[Formula 3a]

In the above formula,

R ³ to R ⁴ are each independently hydrogen, a C1 to C6 alkyl group, a hydroxy group, an amino group, or a thiol group.

In one embodiment of the present invention, Ar ² and Ar ³ are each independently benzene, biphenyl, naphthalene, anthracene, phenanthrene, chrysene, pyrene or 4,6a-dihydrofluoranthene (4, It may include an arylene group derived from 6a-dihydrofluoranthene).

In one embodiment of the present invention, R ¹ and R ² may be hydrogen.

Preferably, the polymer may be represented by the following Chemical Formulas 1a, 2a or 2b.

[Formula 1a]

[Formula 2a]

[Formula 2b]

In the above formula,

n and m are each independently an integer from 3 to 30.

In one embodiment of the present invention, the weight average molecular weight of the polymer may be 1,000 to 20,000, preferably about 1,000 to 5,000. When the weight average molecular weight of the polymer is less than 1,000, the heat resistance of the hard mask may be excessively lowered, and cracks and etching damage may be severe. When the weight average molecular weight of the polymer exceeds 20,000, the coating property of the composition is weakened, and a hard mask layer or hard mask having a uniform thickness or height may not be formed.

Polydispersity index (PDI) of the polymer [weight average molecular weight (Mw) / number average molecular weight (Mn)] may be about 1.3 to 6.0, preferably about 1.5 to 4.0. In the polydispersity index range, the coating properties and heat resistance of the hard mask composition may be improved.

In one embodiment of the present invention, the content of the polymer is not particularly limited, but may be about 1 to 35% by weight based on the total weight of the composition. If the content of the polymer is out of the above range, it may be difficult to form a hard mask layer having a desired thickness, or heat resistance of the hard mask may be reduced.

Solvent (B)

In one embodiment of the present invention, as the solvent (B), an organic solvent capable of ensuring sufficient solubility of the above-described polymer may be used without limitation.

For example, as the solvent, propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monomethyl ether (PGME), cyclopentanone, cyclohexanone, ethyl lactate, gamma-butyrolactone (γ-butyrolactone; GBL), acetyl acetone, and the like, and preferably propylene glycol monomethyl ether acetate (PGMEA) or cyclopentanone alone or two or more of them may be used in combination.

In one embodiment of the present invention, the content of the solvent is not particularly limited, and may be included in the remaining amount excluding the above-described components and other additive components. For example, it may be included in an amount of about 50 to 95% by weight, preferably 80 to 95% by weight, based on 100% by weight of the total composition for a hard mask in consideration of applicability, solubility, and dryness of the composition.

The composition for a hard mask according to an embodiment of the present invention may further include one or more selected from the group consisting of a crosslinking agent, a catalyst, and a surfactant.

The crosslinking agent is capable of crosslinking the repeating units included in the polymer with each other, and may react with, for example, a hydroxyl group included in the polymer. By the crosslinking agent, the curing characteristics of the composition for a hard mask may be further strengthened.

Examples of the crosslinking agent include melamine, an amino resin, a glycoluryl compound, or a bisepoxy compound.

The crosslinking agent is, for example, an etherified amino resin, such as a methylated or butylated melamine (specifically N-methoxymethyl-melamine or N-butoxymethyl-melamine) and a methylated or butylated melamine urea resin (specific example, Cymel U-65 Resin or UFR 80 Resin), glycoluryl derivative (compound represented by the following formula 4, specific example is Powderlink 1174), bis (hydroxy methyl)-p-cresol compounds and the like. In addition, a bis-epoxy compound represented by the following Chemical Formula 6 and a melamine-based compound represented by the following Chemical Formula 7 may be used as a crosslinking agent.

[Formula 4]

[Formula 5]

[Formula 6]

[Formula 7]

An acid catalyst or a basic catalyst may be used as the catalyst.

The acid catalyst may be a thermally activated acid catalyst. As an example of the acid catalyst, an organic acid such as p-toluene sulfonic acid can be used. As the acid catalyst, a compound of a thermal acid generator (TAG) system may be used. Examples of the thermal acid generator system catalyst include pyridinium p-toluene sulfonate, 2,4,4,6-tetrabromocyclohexadienone, benzointosylate, 2-nitrobenzyltosyl and alkyl esters of organic sulfonic acids.

As the basic catalyst, any one selected from ammonium hydroxide represented by NH ₄ OH or NR ₄ OH (R is a C1 to C6 alkyl group) may be used.

When the crosslinking agent is included, the content of the crosslinking agent may be 1 to 30 parts by weight, preferably 5 to 20 parts by weight, more preferably 5 to 10 parts by weight based on 100 parts by weight of the polymer.

When the catalyst is included, the amount of the catalyst may be 0.001 to 5 parts by weight, preferably 0.1 to 2 parts by weight, and more preferably 0.1 to 1 parts by weight based on 100 parts by weight of the polymer.

Within the content range of the crosslinking agent and the catalyst, appropriate crosslinking properties may be obtained without deteriorating etch resistance, heat resistance, solubility, and flatness of the polymer.

The surfactant is used to improve the surface properties and adhesion of the hard mask, and for example, alkylbenzenesulfonate, alkylpyridinium salt, polyethylene glycol, quaternary ammonium salt, etc. may be used, but the present invention is not limited thereto. The content of the surfactant may be, for example, 0.1 to 10 parts by weight based on 100 parts by weight of the polymer.

Hereinafter, the present invention will be described in more detail by way of Examples, Comparative Examples and Experimental Examples. These Examples, Comparative Examples, and Experimental Examples are only for illustrating the present invention, and it is apparent to those skilled in the art that the scope of the present invention is not limited thereto.

Synthesis Example 1: Synthesis of Polymer A-1

Polymer A-1 represented by the following formula (1a) was synthesized as follows.

[Formula 1a]

A 1L three-necked flask equipped with a thermometer, condenser, stirrer and dropping funnel was installed in an oil container, and 9,9-bis(indolyl)fluorene and 4,4'-difluorobenzophenone were 1:1 in the reactor. was added at a molar ratio of and dissolved in 200 g of NMP (N-Methyl-2-pyrrolidone). Then K ₂ CO ₃ anhydride (0.02 mol) was added. The polymerization reaction was performed by stirring for 10 hours while maintaining the temperature inside the reactor at 150°C. After the polymerization was completed, water was added to precipitate, and the precipitate was dissolved again in THF (Tetrahydrofurn), and then NaBH ₄ was added thereto. And stirred at room temperature for an additional 24 hours. The reaction mixture obtained by cooling to room temperature was precipitated using distilled water, the precipitated polymer was filtered, and then the polymer A-1 was obtained by distillation under reduced pressure. The polymer A-1 had a weight average molecular weight (Mw) of 4000, and a degree of dispersion (Mw/Mn) of 2.2.

Synthesis Example 2: Synthesis of Polymer A-2

Polymer A-2 represented by the following Chemical Formula 2a was synthesized in the same manner as in Synthesis Example 1, except that 2,6-bis(4-fluorobenzoyl)naphthalene was used instead of 4,4'-difluorobenzophenone. The polymer A-2 had a weight average molecular weight (Mw) of 4500, and a degree of dispersion (Mw/Mn) of 2.7.

[Formula 2a]

Synthesis Example 3: Synthesis of Polymer A-3

In the same manner as in Synthesis Example 1, except that 4,4'-bis(4-fluorobenzoyl)-1,1'-biphenyl was used instead of 4,4'-difluorobenzophenone, Polymer A-3 was synthesized. The polymer A-3 had a weight average molecular weight (Mw) of 5000, and a degree of dispersion (Mw/Mn) of 2.4.

[Formula 2b]

Synthesis Example 4: Synthesis of Polymer A-4

Polymer A-4 represented by the following formula (a) was synthesized as follows.

[Formula a]

A 1L three-necked flask equipped with a thermometer, condenser, stirrer and dropping funnel was installed in an oil container, and 9,9-bis(indolyl)fluorene and 4,4'-difluorobenzophenone were 1:1 in the reactor. was added at a molar ratio of and dissolved in 200 g of NMP (N-Methyl-2-pyrrolidone). Then K ₂ CO ₃ anhydride (0.02 mol) was added. The polymerization reaction was performed by stirring for 10 hours while maintaining the temperature inside the reactor at 150°C. After polymerization was completed, water was added to precipitate the polymer, and the precipitated polymer was filtered and distilled under reduced pressure to obtain polymer A-4. The polymer A-4 had a weight average molecular weight (Mw) of 4500, and a degree of dispersion (Mw/Mn) of 2.4.

Synthesis Example 5: Synthesis of Polymer A-5

Polymer A-5 represented by the following formula (b) in the same manner as in Synthesis Example 4 except for using 4,4'-difluorobenzil instead of 4,4'-difluorobenzophenone was synthesized. The polymer A-5 had a weight average molecular weight (Mw) of 5000 and a degree of dispersion (Mw/Mn) of 2.2.

[Formula b]

Synthesis Example 6: Synthesis of Polymer A-6

Polymer A-6 having a structural unit represented by the following formula (c) was synthesized as follows.

[Formula c]

A 1L three-necked flask equipped with a thermometer, condenser, stirrer and dropping funnel was installed in an oil container, 12.8 g (0.1 mol) of naphthalene and 23.0 g (0.1 mol) of 1-pyrenecarboxaldehyde were added to the reactor and 200 g of propylene It was dissolved in glycol monomethyl ether acetate (PGMEA). Then, 0.38 g (0.002 mol) of para-toluenesulfonic acid hydrate was added. After polymerization by stirring for 12 hours while maintaining the temperature inside the reactor at 120° C., 0.45 g (0.003 mol) of triethanolamine as a neutralizing agent was added to the reactor, followed by stirring for additional 1 hour at room temperature. The reaction mixture obtained by cooling to room temperature was precipitated using distilled water/methanol having a mass ratio of 3:7, and the precipitated polymer was filtered and distilled under reduced pressure to obtain a polymer A-6 having a structural unit represented by the above formula (c). The polymer A-6 had a weight average molecular weight (Mw) of 2460, and a degree of dispersion (Mw/Mn) of 1.6.

Examples 1 to 3 and Comparative Examples 1 to 3: Preparation of a composition for a hard mask

A composition for a hard mask was prepared by mixing each component with the composition shown in Table 1 below (unit: wt%).

polymer menstruum type content type content type content Example 1 A-1 10 B-1 50 B-2 40 Example 2 A-2 10 B-1 50 B-2 40 Example 3 A-3 10 B-1 50 B-2 40 Comparative Example 1 A-4 10 B-1 50 B-2 40 Comparative Example 2 A-5 10 B-1 50 B-2 40 Comparative Example 3 A-6 10 B-1 50 B-2 40

A-1: Polymer of Synthesis Example 1

A-2: Polymer of Synthesis Example 2

A-3: Polymer of Synthesis Example 3

A-4: Polymer of Synthesis Example 4

A-5: Polymer of Synthesis Example 5

A-6: Polymer of Synthesis Example 6

B-1: PGMEA (propylene glycol monomethyl ether acetate)

B-2: CPN (Cyclopentanone)

Experimental Example 1:

Etching resistance, chemical resistance, and solubility of the hardmask compositions prepared in Examples and Comparative Examples were measured in the following manner, and the results are shown in Table 2 below.

(1) etch resistance

The compositions for hard masks according to Examples and Comparative Examples were respectively coated on a silicon wafer by a spin-coating method, heat treated at 400° C. for 90 seconds to form a thin film, and then the initial thin film thickness was measured. Each of the formed film-coated wafers was dry-etched using a dry etching equipment (Dielectric etcher) under CF ₄ /CHF ₃ mixed gas conditions, and the thin film thickness was measured. The etching rate (A/min) was calculated by dividing the difference between the initial thin film thickness (Å) and the post-etched thin film thickness (Å) by the etching time (min).

(2) chemical resistance

The compositions for hard masks according to Examples and Comparative Examples were spin-coated and heat treated in the same manner as in the evaluation of etch resistance to form a thin film. The thickness change of the thin film was measured by immersing the formed thin film-coated wafer in a petri dish containing a diluent for 30 seconds. The residual film ratio represents the initial thin film thickness (Å) compared to the thin film thickness (Å) after immersion. Chemical resistance was evaluated according to the following evaluation criteria according to the remaining film rate.

<Evaluation criteria>

◎: Remaining film ratio of 95% or more

○: Remaining film ratio of 90% or more to less than 95%

△: Remaining film ratio 85% or more to less than 90%

×: Less than 85% of the remaining film and thin film peeling occurs

(3) solubility

Each polymer used in the composition for hard mask according to Examples and Comparative Examples was diluted with propylene glycol monomethyl ether acetate (PGMEA) to check the concentration (wt%) of the completely soluble polymer. . Solubility was evaluated according to the following evaluation criteria.

<Evaluation criteria>

◎: 15wt% or more

○: 10wt% or more to less than 15wt%

△: 5 wt% or more to less than 10 wt%

×: less than 5 wt% or insoluble

Etch resistance (etch rate, Å/min) chemical resistance solubility Example 1 685 ◎ ◎ Example 2 765 ◎ ◎ Example 3 752 ◎ ◎ Comparative Example 1 1050 △ ○ Comparative Example 2 1118 × ○ Comparative Example 3 1124 △ ×

As shown in Table 2 above, according to the present invention, the compositions for hard masks of Examples 1 to 3 comprising a polymer having a specific structure having a heteroarylene group and a hydroxyl group connected by a C-N bond according to the present invention have etch resistance, resistance to It was confirmed that chemical properties and solubility could be secured at the same time.

On the other hand, the composition for a hard mask of Comparative Examples 1 and 2, including a polymer having no hydroxyl group in the molecule, and a heteroarylene group connected by a C-N bond, and a polymer having no hydroxyl group, in Comparative Example 3, has etch resistance. , it was found that chemical resistance and solubility could not be secured at the same time.

As the specific part of the present invention has been described in detail above, for those of ordinary skill in the art to which the present invention pertains, it is clear that these specific techniques are only preferred embodiments, and the scope of the present invention is not limited thereto. do. Those of ordinary skill in the art to which the present invention pertains will be able to make various applications and modifications within the scope of the present invention based on the above contents.

Accordingly, the substantial scope of the present invention will be defined by the appended claims and their equivalents.

Claims (7)

A composition for a hard mask comprising a polymer and a solvent represented by the following Chemical Formula 1 or 2:
[Formula 1]

[Formula 2]

In the above formula,
Ar ¹ is a substituted or unsubstituted C3 to C50 heteroarylene group containing a nitrogen atom and the nitrogen atom is bonded to Ar ² ,
Ar ² and Ar ³ are each independently a substituted or unsubstituted C6 to C50 arylene group,
R ¹ to R ² are each independently hydrogen or a C1 to C6 alkyl group,
R ³ to R ⁴ are each independently hydrogen, a C1 to C6 alkyl group, a hydroxy group, an amino group or a thiol group,
n and m are each independently an integer from 3 to 30. The composition for a hard mask according to claim 1, wherein Ar ¹ is derived from a compound represented by the following formula (3):
[Formula 3]

In the above formula,
R ³ and R ⁴ are each independently hydrogen, a C1 to C6 alkyl group, a hydroxy group, an amino group or a thiol group,
a and b are each independently an integer of 0 to 5,
c and d are each independently an integer from 0 to 5; The method according to claim 1, wherein Ar ² and Ar ³ are each independently benzene, biphenyl, naphthalene, anthracene, phenanthrene, chrysene, pyrene or 4,6a-dihydrofluoranthene (4,6a- A composition for a hard mask comprising an arylene group derived from dihydrofluoranthene). The composition for a hard mask according to claim 1, wherein R ¹ and R ² are hydrogen. The composition for a hard mask according to claim 1, wherein the polymer is represented by the following Chemical Formula 1a, 2a or 2b:
[Formula 1a]

[Formula 2a]

[Formula 2b]

In the above formula,
n and m are each independently an integer from 3 to 30. The composition for a hard mask according to claim 1, wherein the polymer has a weight average molecular weight of 1,000 to 20,000. The composition for a hard mask according to claim 1, further comprising at least one selected from the group consisting of a crosslinking agent, a catalyst, and a surfactant.