KR20220056413A - Thin Film Deposition Apparatus - Google Patents

Abstract

Disclosed is a thin film deposition device improved to prevent a byproduct from being formed in an undesirable area except a substrate. The thin film deposition device comprises: a substrate support unit disposed inside a chamber and supporting the substrate to be moved; a gas supply unit adsorbed on the substrate to supply a plurality of gases forming a thin film; and a plasma generation unit generating a trap gas in a plasma state to react with at least a portion of the gas activated in the plasma state among the plurality of gases.

Description

Thin Film Deposition Apparatus

The present invention relates to a thin film deposition apparatus, and more particularly, to a thin film deposition apparatus configured to form a thin film on a substrate by an atomic layer deposition method.

Recently, as a method for forming a thin film on a substrate such as a semiconductor or a display, atomic layer deposition (ALD) is widely used.

In the atomic layer deposition method, the precursor supply, purging, reactant supply, and purge steps are time-divided and sequentially injected into the reactor, and two precursors and reactants present in physically different locations are sequentially supplied. A spatial partitioning method is used.

Among them, in the case of the atomic layer deposition method using the space division method, the productivity is higher than the time division method in that the purge step between supplying the precursor and the reactant can be reduced, and compared to the time division method, it has the advantage of being able to process a large substrate. .

However, in the atomic layer deposition process using the space division method, when the source gas remaining in the chamber without being adsorbed on the substrate reacts with a reactive gas activated in a plasma state, particularly radicals, a by-product is formed. However, there may be a problem in that these by-products are formed in unwanted areas other than the substrate in the chamber.

SUMMARY OF THE INVENTION An object of the present invention is to provide an improved thin film deposition apparatus capable of preventing the formation of by-products in unwanted areas other than the substrate.

The problems of the present invention are not limited to the problems mentioned above, and other problems not mentioned will be clearly understood by those skilled in the art from the following description.

A thin film deposition apparatus according to an embodiment of the present invention for solving the above problems includes: a substrate support unit disposed inside a chamber and configured to be movable by supporting a substrate; and adsorbed on the substrate to form a thin film a gas supply unit configured to supply a plurality of gases; and a plasma generation unit configured to generate a trap gas in a plasma state to react with at least a portion of the gas activated in a plasma state among the plurality of gases.

The gas supply unit includes: at least one source gas supply pipe supplying a source gas; and at least one reaction gas supply pipe supplying a reaction gas reacting with the source gas adsorbed on the substrate; The reactive gas supply pipe may include a plasma forming unit for activating the reactive gas into a plasma state.

The gas supply unit may further include a plurality of purge gas supply pipes for supplying a purge gas for purging the source gas or the reaction gas remaining in the chamber.

The plasma generating unit communicates with at least one of the plurality of purge gas supply pipes, and the trap gas in a plasma state generated by the plasma generating unit is configured to be supplied into the chamber through at least one of the plurality of purge gas supply pipes. can

The gas supply unit may include a trap gas supply pipe disposed at one side of the at least one reaction gas supply pipe to supply the trap gas in a plasma state generated by the plasma generating unit into the chamber.

The plasma generating unit may include a remote plasma source (RPS) disposed outside the chamber.

The plasma generating unit may be disposed at one end of at least one of the plurality of purge gas supply pipes to generate plasma.

The plasma generating unit may include a plasma generating pipe installed at one end of at least one of the plurality of purge gas supply pipes, a plasma antenna installed to surround the outside of the plasma generating pipe, and supplying high-frequency power to the plasma antenna. It may include a high-frequency power supply for

The plasma generating unit may include a first electrode disposed inside at least one of the plurality of purge gas supply pipes, a second electrode spaced apart from the first electrode, and disposed between the first electrode and the second electrode It may contain a dielectric that becomes

The plurality of purge gas supply pipes may be disposed between the source gas supply pipe and the reactive gas supply pipe, respectively.

The trap gas may include argon or helium.

In addition, a thin film deposition apparatus according to an embodiment of the present invention includes a chamber having a deposition space therein; a substrate support disposed in the chamber and configured to support a substrate; and a substrate supported by the substrate supporter at least one first gas supply channel for supplying a first gas toward at least one third gas supply channel provided between the first gas supply channel and the second gas supply channel and supplying a third gas; and a plasma that converts the third gas supplied to the third gas supply channel into a plasma generating unit;

According to the present invention, since the reactive gas in the plasma state is removed by reacting with other gases in the plasma state that are generated and supplied inside or outside the chamber in a region other than the substrate, a by-product is formed in an unwanted region other than the substrate. phenomenon is prevented.

In addition, since the formation of by-products in unwanted areas other than the substrate is prevented, separate maintenance for removing these by-products is unnecessary, thereby improving productivity.

1 is a diagram schematically illustrating a thin film deposition apparatus according to an embodiment of the present invention.
FIG. 2 is an enlarged view illustrating a partial configuration of the gas supply unit of FIG. 1 , and is a diagram illustrating an embodiment in which a supply pipe of the plasma generating unit is connected to a purge gas supply pipe.
3 is a view illustrating an embodiment in which a trap gas supply pipe communicating with a supply pipe of a plasma generating unit is provided on one side of the reactive gas supply pipe.
4 is a flowchart illustrating a thin film forming process using the atomic layer deposition apparatus according to an embodiment of the present invention shown in FIG. 1 .
5 is a diagram schematically illustrating a thin film deposition apparatus according to another embodiment of the present invention.
FIG. 6 is a diagram illustrating the plasma generating unit of FIG. 5 .
7 is a diagram schematically illustrating a thin film deposition apparatus according to another embodiment of the present invention.
FIG. 8 is a diagram illustrating the plasma generating unit of FIG. 7 .

Hereinafter, various embodiments will be described in more detail with reference to the accompanying drawings. The embodiments described herein may be variously modified. Certain embodiments may be depicted in the drawings and described in detail in the detailed description. However, the specific embodiments disclosed in the accompanying drawings are only provided to facilitate understanding of the various embodiments. Accordingly, the technical spirit is not limited by the specific embodiments disclosed in the accompanying drawings, and it should be understood to include all equivalents or substitutes included in the spirit and scope of the invention.

In this specification, when it is described that a certain element is formed "on" another element, the case where another element is present between the certain element and the other element is not excluded. That is, the certain component may be formed in direct contact with the other component, or another component may be interposed between the certain component and the other component.

Terms including an ordinal number such as 1st, 2nd, etc. may be used to describe various components, but these components are not limited by the above-mentioned terms. The above terminology is used only for the purpose of distinguishing one component from another component.

When an element is referred to as being “connected” or “connected” to another element, it is understood that it may be directly connected or connected to the other element, but other elements may exist in between. it should be

The singular expression includes the plural expression unless the context clearly dictates otherwise.

Hereinafter, embodiments of the thin film deposition apparatus of the present invention will be described with reference to the accompanying drawings.

1 is a diagram schematically illustrating a thin film deposition apparatus according to an embodiment of the present invention.

FIG. 2 is an enlarged view illustrating a partial configuration of the gas supply unit of FIG. 1 , and is a diagram illustrating an embodiment in which a supply pipe of the plasma generating unit is connected to a purge gas supply pipe.

1 to 2 , the thin film deposition apparatus 100 includes a chamber 110 , a substrate support unit 120 , a gas supply unit 130 , and a plasma generation unit 140 .

The chamber 110 accommodates the substrate W and provides a space S in which a thin film deposition process is performed. The inside of the chamber 110 may be maintained in a vacuum state by vacuum equipment such as a pump (not shown).

The chamber 110 includes a chamber body 112 and a chamber lid 114 covering an upper portion of the chamber body 112 .

A first opening 112a and a second opening 112b are respectively provided on both sides of the chamber body 112 . The substrate W may be moved into the chamber 110 through the first opening 112a and, after a deposition process, may be moved to the outside of the chamber 110 through the second opening 112b. 1 illustrates a structure in which openings are formed on both sides of the chamber body 112, a structure in which the substrate W is entered and discharged through one opening on one side of the chamber body 112 is also applicable.

A gas supply unit 130 is disposed on the chamber lid 114 . The chamber lid 114 includes a plurality of flow passages 114a, 114b, and 114c and a plurality of discharge pipes 114d.

The plurality of flow paths 114a , 114b , and 114c communicate with the gas supply unit 130 to allow gases to be introduced into the gas supply unit 130 .

The plurality of discharge pipes 114d are disposed between the plurality of flow passages 114a, 114b, and 114c. The source gas, the reaction gas, and the purge gas remaining in the chamber 110 without being adsorbed to the substrate W may be discharged to the outside of the chamber 110 through the plurality of discharge pipes 114d.

The substrate support unit 120 on which the substrate W is seated is disposed inside the chamber 110 .

The substrate support unit 120 includes a substrate support 122 , a heat supply plate 124 , and a plate support 126 .

The substrate support 122 is installed to be movable relative to the gas supply unit 130 . At least one of the substrate support 122 and the gas supply unit 130 may be installed to move relative to the other in a horizontal direction. For example, both the substrate support 122 and the gas supply unit 130 may be configured to be movable relative to each other, or any one of the substrate support 122 and the gas supply unit 130 may be configured to move relative to the other. can

A heat supply plate 124 for heating the substrate W and a plate support 126 coupled to the heat supply plate 124 to support the heat supply plate 124 are disposed below the substrate support 122 .

The heat supply plate 124 is spaced apart from the substrate support 122 and is configured to apply heat to the substrate W seated on the substrate support 122 to control the deposition temperature of the thin film.

Referring to FIG. 2 , the gas supply unit 130 supplies a source gas supply pipe 132 for supplying a source gas into the chamber 110 and a reactive gas reacting with the source gas adsorbed on the substrate W. It includes a reactive gas supply pipe 134 and a purge gas supply pipe 136 for supplying a purge gas for removing the source gas or the reactive gas remaining in the chamber 110 .

The source gas supply pipe 132 is disposed at the end of the source gas supply channel 132a communicating with the first flow path 114a formed in the chamber lid 114 and the source gas supply channel 132a to enter the chamber 110 . and a source gas injection port 132b for injecting the source gas. The source gas supply channel 132a extends downward from the first flow path 114a toward the substrate W.

The source gas passing through the source gas supply channel 132a is injected through the source gas injection hole 132b and then is adsorbed onto the substrate W.

The reactive gas supply pipe 134 is disposed at the ends of the reactive gas supply channel 134a communicating with the second flow path 114b formed in the chamber lid 114 and the reactive gas supply channel 134a to enter the chamber 110 . and a reactive gas injection port 134b for injecting a reactive gas. The reaction gas supply channel 134a extends downward from the second flow path 114b toward the substrate W.

The reactive gas supply pipe 134 further includes a plasma forming unit 134c disposed in the reactive gas supply channel 134a.

The plasma forming unit 134c includes a power electrode 134c1 installed on one inner wall of the reactive gas supply pipe 134 and a ground electrode 134c2 installed on the other inner wall of the reactive gas supply pipe 134 . The ground electrode 134c2 may not be separately provided, and the other inner wall itself may be grounded to serve as a ground electrode.

The reactive gas is activated in the plasma state in the plasma forming unit 134c while passing through the reactive gas supply channel 134a, and the reactive gas activated in the plasma state is injected through the reactive gas injection hole 134b in the form of an activation atom or radical. After that, it reacts with the source gas adsorbed on the substrate W to form a thin film.

The purge gas supply pipe 136 is disposed at the end of the purge gas supply channel 136a and the purge gas supply channel 136a communicating with the third flow path 114c formed in the chamber lid 114 to enter the chamber 110 . and a purge gas injection port 136b for injecting a purge gas. The purge gas supply channel 136a extends downward from the third flow path 114c toward the substrate W.

The purge gas passing through the purge gas supply channel 136a pushes the source gas and the reaction gas remaining in the chamber 110 to be discharged through the plurality of discharge pipes 114d.

The source gas supply pipe 132 and the reaction gas supply pipe 134 are spaced apart from each other in a direction in which the substrate support 122 or the gas supply unit 130 moves, that is, in a horizontal direction.

Accordingly, as the substrate support 122 or the gas supply unit 130 moves, the source gas and the reaction gas may be sprayed with a time difference to be adsorbed onto the substrate W.

A purge gas supply pipe 136 is spaced apart between the source gas supply pipe 132 and the reactive gas supply pipe 134 . The purge gas supply pipe 136 may be disposed on both sides of the source gas supply pipe 132 , respectively.

Accordingly, the source gas that is not adsorbed on the substrate W and remains is through the plurality of discharge pipes 114d by the purge gas supplied into the chamber 110 through the purge gas supply pipe 136 before the reactive gas is supplied. can be emitted.

In addition, the reactive gas not adsorbed on the substrate W, that is, the reactive gas remaining without reacting with the source gas adsorbed on the substrate W to form a thin film is passed through the purge gas supply pipe 136 to the chamber 110 . It is discharged through the plurality of discharge pipes 114d by the purge gas supplied therein.

The plurality of discharge pipes 114d may be disposed between the source gas supply pipe 132 and the purge gas supply pipe 136 or between the reaction gas supply pipe 134 and the purge gas supply pipe 136 .

The source gas and reactive gas remaining in the chamber 110 and the purge gas supplied into the chamber 110 to remove the source gas and the reactive gas are discharged to the outside of the chamber 110 through the plurality of discharge pipes 114d. can be

The source gas supply pipe 132 , the reaction gas supply pipe 134 , the purge gas supply pipe 136 , and the plurality of discharge pipes 114d shown in FIG. 2 may be repeatedly arranged in the same arrangement structure in the gas supply unit 130 . can

The source gas supplied to the inside of the thin film forming apparatus according to embodiments of the present invention may include trimethyl aluminum (TMA, (CH3)3Al).

The reactive gas supplied to the inside of the thin film forming apparatus according to the embodiments of the present invention may include O2, NH3, NO2, etc. which may react with trimethyl aluminum to form a thin film.

The purge gas supplied to the inside of the apparatus for forming a thin film according to embodiments of the present invention may include an inert gas such as argon (Ar) or helium (He).

The plasma generating unit 140 is disposed outside the chamber 110 to generate a remote plasma source 142 (RPS) for generating plasma, and a plasma generated from the remote plasma source 142 inside the chamber 110 . Includes a supply pipe 144 for guiding to. The supply pipe 144 may communicate with the third flow path 114c formed in the chamber lid 114 . Accordingly, the plasma passing through the supply pipe 144 may be injected into the chamber 110 through the third flow path 114c and the purge gas supply pipe 136 communicating with the third flow path 114c.

The reactive gas in the plasma state injected into the chamber 110 through the purge gas supply pipe 136 is injected through the reactive gas supply channel 134a and then reacts with other reactive gases in the activated plasma state.

Therefore, before the activated atoms or radicals of the reactive gas injected and activated through the reactive gas supply channel 134a react with the source gas remaining in the chamber 110 to form by-products, it is generated in the remote plasma source 142 and It may be removed by reacting with other reactive gases in a plasma state injected into the chamber 110 through the purge gas supply pipe 136 . (Hereinafter, the gas in the plasma state generated by the remote plasma source 142 is referred to as a 'trap gas'.)

As an example, the present invention is an apparatus for depositing an Al2O3 encapsulation film of a display substrate by ALD, and uses TMA as a source gas and O2 plasma as a reaction gas. At this time, the trap gas serves to convert the remaining O2-radical into a gaseous molecular state. The gas molecular state is weak in reactivity and does not react even when mixed with the source gas.

In one embodiment, as the trap gas, it is preferable to use an inert gas (eg, Ar or He) that is not reactive even when recombination occurs in a radical state.

In the above, the plasma generating unit 140 communicates with the purge gas supply pipe 136 , and the trap gas in a plasma state generated by the remote plasma source 142 is injected into the chamber 110 through the purge gas supply pipe 136 . Although the structure has been described, a structure in which the trap gas in a plasma state generated by the remote plasma source 142 is injected through other components of the gas supply unit 130 other than the purge gas supply pipe 136 is also applicable.

3 is a view illustrating an embodiment in which a trap gas supply pipe communicating with a supply pipe of a plasma generating unit is provided on one side of the reactive gas supply pipe.

As shown in FIG. 3 , the gas supply unit 130 may be provided in a structure including the purge gas supply pipe 136 and the trap gas supply pipe 148 separately disposed. The trap gas supply pipe 148 may be disposed on one side of the reaction gas supply pipe 134 .

The trap gas in a plasma state that has passed through the supply pipe 144 may be injected into the chamber 110 through the trap gas supply pipe 148 . The trap gas injected into the chamber 110 reacts with the reactive gas in an activated plasma state after being injected through the reactive gas supply channel 134a.

Therefore, before the activated atoms or radicals of the reactive gas injected and activated through the reactive gas supply channel 134a react with the source gas remaining in the chamber 110 to form by-products, it is generated in the remote plasma source 142 and It may be removed by reacting with other reactive gases in a plasma state injected into the chamber 110 through the trap gas supply pipe 148 .

Hereinafter, a thin film forming process using the atomic layer deposition apparatus 100 according to an embodiment of the present invention will be described.

4 is a flowchart illustrating a thin film forming process using the atomic layer deposition apparatus according to an embodiment of the present invention shown in FIG. 1 .

After the substrate W is moved into the chamber 110 through the first opening 112a, it may be loaded onto the substrate support 122 disposed inside the chamber 110 (S10).

The internal space S of the chamber 110 may be made in a vacuum state by a vacuum equipment such as a pump (not shown). When heat is supplied to the heat supply plate 124 in a state in which the substrate W is loaded, the substrate W may be heated to a set process temperature.

Next, a source gas, a purge gas, a reaction gas, and a trap gas may be simultaneously supplied into the chamber 110 ( S20 ).

In a state in which a source gas, a purge gas, a reactive gas, and a trap gas are supplied into the chamber 110 , the substrate support 122 includes a section in which the source gas is supplied, a section in which the purge gas is supplied, and a section in which the reaction gas is supplied. It moves sequentially to the section, again to the section to which the purge gas is supplied. (S30)

The source gas is injected through the source gas supply pipe 132 of the gas supply unit 130 positioned above the chamber 110 to be supplied into the chamber 110 . When the substrate support 122 is moved to a section where the source gas is supplied, the source gas may be supplied for a preset time and adsorbed on the substrate W.

When the substrate support 122 is moved to a section where the purge gas is supplied, the purge gas may perform a first purging in the chamber 110 .

The source gas remaining without being adsorbed on the substrate W by the first purging may be discharged through the plurality of discharge pipes 114d. The purge gas may be injected into the chamber 110 through the purge gas supply pipe 136 of the gas supply unit 130 . The purge gas may be injected for a preset time. An inert gas such as argon (Ar) or helium (He) may be used as the purge gas.

The reaction gas may be supplied for a preset time.

When a high-frequency voltage is applied to the power electrode 134c1 while the reactive gas passes through the reactive gas supply channel 134a of the reactive gas supply pipe 134 , the reactive gas is activated in a plasma state in the plasma forming unit 134c. . The reactive gas in the plasma state includes ions, activating atoms, or radicals, and may have high reactivity.

The reactive gas activated in the plasma state may be injected through the reactive gas injection hole 134b.

When the substrate support 122 is moved to a section where the reaction gas is supplied, radicals of the reaction gas supplied into the chamber 110 react with the source gas adsorbed on the substrate W to form a thin film having a desired atomic layer thickness. to form

After the trap gas is activated in a plasma state in the plasma generating unit 140 , the trap gas may be introduced into the chamber 110 through the purge gas supply pipe 136 or a separate trap gas supply pipe 148 .

The trap gas introduced into the chamber 110 reacts with radicals among the reactive gases that are not adsorbed on the substrate W, and is removed. That is, the trap gas reacts with the radicals of the reactive gas in an activated state before reacting with the source gas remaining in the chamber 110 without being adsorbed on the substrate W. Therefore, a phenomenon in which radicals react with the source gas remaining in the chamber 110 to form a thin film in unnecessary areas other than the substrate W, for example, the inner wall of the chamber 110 and the inner wall of the discharge pipes 114d, can be suppressed. can

When the substrate support 122 is moved to a section where the purge gas is supplied, the purge gas may perform a second purging in the chamber 110 .

Source gas, reaction gas, trap gas, and other reaction byproducts remaining in the chamber 110 without being adsorbed on the substrate W by the second purging to form a thin film may be discharged through the plurality of discharge pipes 114d. there is. When the second purging is completed, a single-layer thin film may be formed on the substrate W.

When a thin film of a desired thickness is formed on the substrate W, the substrate W is cooled and then the substrate W is unloaded from the substrate support 122, and the second opening 112b passes through the chamber ( 110) can be moved to the outside.

5 is a diagram schematically illustrating a thin film deposition apparatus according to another embodiment of the present invention, and FIG. 6 is a diagram illustrating the plasma generating unit of FIG. 5 .

Among the components included in the thin film deposition apparatus 200 according to another embodiment of the present invention shown in FIGS. 5 and 6 except for the plasma generating unit 240 , the remaining components are one embodiment of the present invention shown in FIGS. 1 to 3 . Since the components are the same as those included in the thin film deposition apparatus 100 according to the example, the same reference numerals are applied and detailed descriptions thereof are omitted.

Hereinafter, the plasma generating unit 240 will be described.

5 and 6 , the plasma generating unit 240 is disposed inside the chamber 110 to generate plasma. The plasma generating unit 240 is disposed to be spaced apart from the substrate support 122 by a predetermined distance so that the plasma generated therein does not directly contact the substrate W.

Specifically, the plasma generating unit 240 includes a plasma generating pipe 242 installed at at least one end of the purge gas supply pipe 136 and a plasma antenna 244 installed to surround the outside of the plasma generating pipe 242 and , and a high-frequency power supply 246 for supplying high-frequency power to the plasma antenna 244 .

A space S1 in which a trap gas is introduced to be activated in a plasma state is provided in the plasma generating tube 242 .

The plasma generating pipe 242 may be disposed substantially parallel to the purge gas supply channel 136a of the purge gas supply pipe 136 . The trap gas passing through the purge gas supply channel 136a may be introduced into the plasma generating tube 242 to be activated in a plasma state.

The plasma generating tube 242 may be formed of an insulating member, and the insulating member constituting the plasma generating tube 242 may include quartz.

The plasma antenna 244 is wound in a coil shape on the outer surface of the plasma generating tube 242 to induce the generation of an electromagnetic field in the inner space S1 of the plasma generating tube 242 . That is, the plasma antenna 244 may generate plasma using an inductively coupled plasma (ICP) method.

A high frequency power supply 246 for supplying high frequency power may be connected to the plasma antenna 244 . An impedance matcher 248 may be further disposed between the plasma antenna 244 and the high frequency power source 246 for impedance matching.

When the trap gas is introduced into the inner space S1 of the plasma generating tube 242 and high-frequency power is applied to the plasma antenna 244 , an electromagnetic field is formed in the plasma generating tube 242 to generate plasma discharge. By plasma discharge, the trap gas in the internal space S1 of the plasma generating tube 242 is activated from a gaseous state to a plasma state, and the plasma trap gas is a purge gas supply pipe 136 communicating with the plasma generating tube 242 . is injected into the chamber 110 through the

The trap gas in the plasma state injected into the chamber 110 through the purge gas supply pipe 136 is injected through the reactive gas supply channel 134a and then reacts with the reactive gas in the activated plasma state.

Therefore, before the activated atoms or radicals of the reactive gas injected and activated through the reactive gas supply channel 134a react with the source gas remaining in the chamber 110 to form a by-product, it is generated in the plasma generating tube 242 and It may be removed by reacting with the trap gas in a plasma state injected into the chamber 110 through the purge gas supply pipe 136 .

7 is a diagram schematically illustrating a thin film deposition apparatus according to another embodiment of the present invention, and FIG. 8 is a diagram illustrating the plasma generating unit of FIG. 7 .

Among the components included in the thin film deposition apparatus 300 according to another embodiment of the present invention shown in FIGS. 7 and 8 , other components except for the plasma generating unit 340 are the ones of the present invention shown in FIGS. 1 to 3 . Since the components are the same as those included in the thin film deposition apparatus 100 according to the embodiment, the same reference numerals are applied and detailed descriptions thereof are omitted.

Hereinafter, the plasma generating unit 340 will be described.

7 and 8 , the plasma generating unit 340 is disposed inside the chamber 110 to generate plasma. The plasma generating unit 340 is disposed to be spaced apart from the substrate support 122 by a predetermined distance so that the plasma generated therein does not directly contact the substrate W.

Specifically, the plasma generating unit 340 includes a first electrode 342 disposed inside at least one of the purge gas supply pipe 136 , a second electrode 344 disposed spaced apart from the first electrode 342 , and a second electrode 344 . It includes a dielectric material 346 disposed between the first electrode 342 and the second electrode 344 , and an AC power supply 348 for supplying AC power to the first electrode 342 .

The first electrode 342 and the second electrode 344 are vertically spaced apart from each other, and the dielectric 346 is disposed between the first electrode 342 and the second electrode 344 or the first electrode 342 or It may be disposed in contact with at least one of the second electrodes 344 .

A space S2 is provided between the first electrode 342 and the second electrode 344 , in which a trap gas is introduced and activated in a plasma state.

The first electrode 342 is disposed inside the purge gas supply pipe 136 so as not to be exposed to the space S inside the chamber 110 , and the second electrode 344 is disposed in the space S inside the chamber 110 . placed so as to be exposed to

The first electrode 342 and the second electrode 344 may include a conductive metal such as stainless steel, aluminum, or copper.

The dielectric 346 prevents the first electrode 342 or the second electrode 344 from being damaged due to an arc generated when plasma is generated. As a material of the dielectric 346 , quartz or ceramic may be used.

The AC power supply 348 is connected to the first electrode 342 to supply high-frequency AC power. The second electrode 344 may be grounded.

When a trap gas is introduced between the first electrode 342 and the second electrode 344 through the purge gas supply pipe 136 and AC power is applied to the first electrode 342 , the first electrode 342 and the The trap gas is activated in a plasma state by the electric field generated in the space S2 between the two electrodes 344 , and the trap gas in the plasma state is directly discharged into the chamber 110 .

The plasma trap gas is highly reactive because it consists of not only ions and electrons but also high-density activated radicals. Accordingly, the trap gas in the plasma state reacts with the reactive gas in the plasma state that is activated after being injected through the reactive gas supply channel 134a.

Therefore, before the activated atoms or radicals of the reactive gas injected through the reactive gas supply channel 134a react with the source gas remaining in the chamber 110 to form by-products, the first electrode 342 and the second It may be removed by reacting with a trap gas in a plasma state that is formed between the electrodes 344 and is emitted.

In the above, preferred embodiments of the present invention have been illustrated and described, but the present invention is not limited to the specific embodiments described above, and it is common in the technical field to which the present invention pertains without departing from the gist of the present invention as claimed in the claims. Various modifications are possible by those having the knowledge of, of course, and these modifications should not be individually understood from the technical spirit or perspective of the present invention.

100, 200, 300. Thin film deposition device
110. Chamber
120. Substrate support unit
130. Gas supply unit
140, 240, 340. Plasma generating unit

Claims (12)

a substrate support unit disposed inside the chamber and configured to be movable by supporting the substrate;
a gas supply unit configured to supply a plurality of gases adsorbed on the substrate to form a thin film; and
a plasma generating unit generating a trap gas in a plasma state so as to react with at least a portion of the gas activated in a plasma state among the plurality of gases
A thin film deposition apparatus comprising. The method of claim 1,
The gas supply unit,
at least one source gas supply pipe for supplying a source gas;
At least one reactive gas supply pipe for supplying a reactive gas reacting with the source gas adsorbed to the substrate;
The at least one reactive gas supply pipe includes a plasma forming unit for activating the reactive gas into a plasma state. 3. The method of claim 2,
The gas supply unit,
The thin film deposition apparatus further comprising a plurality of purge gas supply pipes for supplying a purge gas for purging the source gas or the reactive gas remaining in the chamber. 4. The method of claim 3,
The plasma generating unit communicates with at least one of the plurality of purge gas supply pipes, and the plasma trap gas generated by the plasma generating unit is configured to be supplied into the chamber through at least one of the plurality of purge gas supply pipes thin film deposition apparatus. 4. The method of claim 3,
The gas supply unit includes a trap gas supply pipe disposed on one side of the at least one reaction gas supply pipe to supply the trap gas in a plasma state generated by the plasma generating unit to the inside of the chamber. The method of claim 1,
The plasma generating unit is a thin film deposition apparatus including a remote plasma source (RPS, Remote Plasma Source) disposed outside the chamber. 4. The method of claim 3,
The plasma generating unit is disposed at one end of at least one of the plurality of purge gas supply pipes to generate plasma. 8. The method of claim 7,
The plasma generating unit,
a plasma generating pipe installed at one end of at least one of the plurality of purge gas supply pipes;
a plasma antenna installed to surround the outside of the plasma generating tube;
and a high-frequency power supply for supplying high-frequency power to the plasma antenna. 8. The method of claim 7,
The plasma generating unit,
a first electrode disposed inside at least one of the plurality of purge gas supply pipes;
a second electrode spaced apart from the first electrode;
and a dielectric disposed between the first electrode and the second electrode. 4. The method of claim 3,
The plurality of purge gas supply pipes are respectively disposed between the source gas supply pipe and the reactive gas supply pipe. The method of claim 1,
The trap gas is a thin film deposition apparatus containing argon or helium. a chamber having a deposition space therein;
a substrate support disposed within the chamber and configured to support a substrate;
at least one first gas supply channel for supplying a first gas toward the substrate supported on the substrate support;
at least one second gas supply channel for supplying a second gas in a plasma state toward the substrate supported on the substrate support;
at least one third gas supply channel provided between the first gas supply channel and the second gas supply channel and supplying a third gas;
a plasma generating unit configured to convert the third gas supplied to the third gas supply channel into a plasma;
A thin film deposition apparatus comprising.

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