KR20220050418A - Wafer pre heating apparatus - Google Patents

Abstract

The present invention relates to a device for preheating a substrate such as a wafer to be inputted into a process chamber in a semiconductor manufacturing process before input. The present invention embodies a novel type of substrate-preheating method of installing an upper heating type heater in a predetermined chamber such as a load lock chamber and heating a substrate in the load lock chamber using the installed heater. The substrate can be preheated to a certain temperature using time when the substrate stands by in the load lock chamber, thereby increasing the speed of processing the substrate without congestion in the flow of the substrate and reducing the time required for heating the substrate in the process chamber. Therefore, provided is a device for preheating a substrate, wherein the yield of manufacturing semiconductors can be improved significantly.

Description

Substrate preheating apparatus

The present invention relates to an apparatus for preheating a substrate, and more particularly, to an apparatus for preheating a substrate such as a wafer, which is input into a process chamber in a semiconductor manufacturing process, before the input.

In general, semiconductor devices are implemented by depositing various materials in the form of thin films on a substrate such as a wafer and patterning them.

In each of these processes, a substrate, which is an object to be treated, is processed in a process chamber in which an environment suitable for the progress of the process is created.

As an example, a semiconductor etching apparatus for performing a semiconductor etching process in a high vacuum process chamber includes a process chamber, a load lock chamber for putting in and taking out a substrate, and between the process chamber and the load lock chamber, or between the process chamber and the process chamber. A transfer chamber in which a substrate is moved between the chambers is provided.

Here, the process chamber is a chamber for performing a desired deposition process on the substrate received from the transfer chamber, and since there are several chambers in one system, various film qualities can be deposited, and the process time is greatly reduced.

In addition, the load lock chamber is a place where substrates are put in and processed substrates are recovered, and is mainly composed of two or more. There is a robot called a load lock arm that moves it to the transfer chamber.

In addition, the transfer chamber moves the substrate entered through the load lock chamber to each process chamber designated by the user, and returns the processed substrate to another chamber or the load lock chamber. arm) to precisely move to each chamber.

Recently, a cluster-type semiconductor etching apparatus is being applied as a multi-chamber type apparatus including a transfer robot or handler and a plurality of chambers disposed around the transfer robot or handler.

Usually, since the processing process is performed in a high temperature atmosphere of about 400°C in the process chamber, when the substrate is mounted on the chuck, the processing process is started after heating the substrate to about 400°C.

In this way, there is a problem in that it takes a lot of time to create a high-temperature atmosphere in the process chamber for heating the substrate, and the yield of semiconductor manufacturing is significantly reduced.

Korean Patent Registration No. 10-0807600 Korean Patent Registration No. 10-1130558 Korean Patent Publication No. 10-2006-0016703

Accordingly, the present invention has been devised in view of such a point, and is a new type of heating in which a top heating type heater is installed in a predetermined chamber, for example, a load lock chamber, and the substrate in the load lock chamber is heated with the installed heater. By implementing the substrate preheating method, the substrate processing speed can be increased without stagnant substrate flow, such as preheating the substrate to a certain temperature by utilizing the time the substrate waits in the load lock chamber, as well as the substrate heating time in the process chamber It is an object of the present invention to provide a substrate preheating apparatus capable of shortening the process and eventually significantly improving the semiconductor manufacturing yield.

In order to achieve the above object, the substrate preheating apparatus provided in the present invention has the following characteristics.

The substrate preheating device is installed in a structure coupled to the upper end of the chamber to heat the substrate in the chamber from the upper portion. and a heater installed on the bottom surface of the heater plate to heat a substrate input into a chamber in which a vacuum environment is created, wherein the substrate input into the process chamber can be heated in advance from the upper part before input It is characterized by being.

Here, the heater is a halogen lamp type heater, and may be disposed over the entire surface of the ceiling inside the chamber while being installed on the bottom surface of the heater plate. .

In addition, the substrate preheating apparatus may further include a transparent heater cover that is installed on the bottom of the heater plate and protects the heater while accommodating the heater inside by using the heater mounting groove.

At this time, the heater mounting grooves are formed in a plurality of concentric circles while forming a circle and having different diameters. may be installed while making one-to-one matching with each heater mounting groove having the same diameter.

As a preferred embodiment, the heater plate may be installed in a structure that can be disassembled and assembled through bolt fastening while being seated in a stepped portion formed along the edge of the through hole formed at the upper end of the chamber.

In particular, at least one column or more of a vacuum conduit for preventing the heater cover from being damaged by discharging the vacuum pressure acting in the heater cover may be formed on the bottom surface of the heater plate.

As a preferred embodiment, the substrate preheating apparatus may further include a damping box installed on one side of the chamber and communicating with the inside of the chamber to prevent vortex generation during venting to prevent particles from flying.

In addition, a cooling water passage and a cover for supplying cooling water to prevent overheating may be formed on the upper surface of the heater plate.

As a preferred embodiment, the heater plate may be provided with a power stage for supplying power to the heater and a temperature sensor for measuring the temperature of the heater, wherein the power stage and the temperature sensor include a screw fastening structure between the holder and the cap and the inside thereof. It can be installed in a structure that can adjust the height through the pressing action of the pressing body in the.

The substrate preheating apparatus provided in the present invention has the following effects.

First, by installing an upper heating type heater in an airlock chamber or a load lock chamber, and installing a new substrate preheating device that heats the substrate in the chamber from the top with the heater installed in this way, the substrate waits in the chamber by utilizing the time the substrate waits in the chamber. can be preheated to a certain temperature, thus increasing the substrate processing speed without stopping the flow of the substrate, as well as shortening the substrate heating time in the process chamber, thereby significantly improving the semiconductor manufacturing yield.

Second, by providing a chamber-integrated substrate preheating apparatus in which a heater assembly is installed on the upper part of the chamber, space utilization can be increased, and there is an advantageous effect in terms of layout design related to robot behavior, substrate flow path, and the like.

Third, the time required to increase the temperature of the substrate by directly heating the substrate in the chamber and heating the substrate under a vacuum environment, and directly heating the substrate on the robot arm without loading and unloading the substrate can be shortened, and accordingly, there is an advantageous effect in terms of economics, such as reducing energy consumption related to heat treatment.

Fourth, by applying a heater cover as a finishing member for protecting the heater installed in the chamber, and applying a structure in which the vacuum pressure in the heater cover can be discharged out of the cover when a vacuum pressure is created in the chamber, the heater can be stably installed It has the effect of protecting the heater cover safely at the same time.

Fifth, a damping space is created on one side of the chamber to prevent a vortex phenomenon in the chamber when the vacuum pressure is discharged, and accordingly, it is possible to prevent the particles contained in the exhaust gas from sticking to the substrate while flying. It has the effect of reducing defects and securing quality.

Sixth, by adopting a structure capable of adjusting the installation height of the temperature sensor for measuring the temperature of the heater as well as the power stage for supplying power to the heater, there is an effect that can actively respond to the specifications of various substrates.

1 to 6 are perspective views illustrating a substrate preheating apparatus according to an embodiment of the present invention;
7 is a cross-sectional view illustrating an operating state of a substrate preheating apparatus according to an embodiment of the present invention;

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

1 to 6 are perspective views illustrating a substrate preheating apparatus according to an embodiment of the present invention.

As shown in FIGS. 1 to 6 , the substrate preheating apparatus is a device for preheating a substrate input to a process chamber before input, that is, a substrate waiting in an airlock chamber or a load lock chamber. This is a device that can shorten the substrate heating time in the process chamber by preheating the substrate to a certain temperature with a top heating type heater to increase the substrate processing speed without stagnant substrate flow.

To this end, the substrate preheating apparatus includes a chamber 10 as a means for providing a space for heating the substrate.

Here, the chamber 10 can apply various chambers, and the chamber 10 at this time is a load lock chamber or an air lock chamber for inserting a substrate such as a wafer and recovering a substrate after a process has been completed. can

The chamber 10 has a flat rectangular box-shaped structure in which a lower end is opened while creating a space therein, and a through hole 11, for example, a circular through hole 11, is formed at the upper end.

A gate 17 is formed on one side of the chamber 10 , and the substrate can enter the chamber 10 or go out of the chamber 10 through the gate 17 .

In addition, a step portion 16 is formed on the edge of the through hole 11 formed at the upper end of the chamber 10, and the heater plate 12 is mounted on the step portion 16 thus formed to be supported while being seated. structure can be installed.

Meanwhile, although not shown in the drawings, the chamber 10 may include a basic configuration of a known air lock chamber or a load lock chamber, for example, a configuration for creating a vacuum inside the chamber.

Such a chamber 10 is installed in a structure supported on a body frame (not shown) of the semiconductor manufacturing facility, and at this time, the bottom surface of the chamber 10, that is, the bottom surface around the open lower end hole, and the close contact portion between the body frame A ring-shaped seal member (not shown) for airtight maintenance may be interposed therebetween.

In addition, two holes 19a and 19b connected to the vacuum line side and the exhaust line side are formed in one side portion of the chamber 10, and each hole 19a, 19b at this time is a vent line (not shown). and a buffer line (not shown), respectively.

Here, a vacuum line extending from a known vacuum generator (not shown) is connected to one hole 19b among the two holes 19a and 19b, and eventually a vacuum environment is created inside the chamber 10 or a vacuum The environment can be released.

In addition, the substrate preheating apparatus includes a heater plate 12 as a means for installing a heater 13 for heating the substrate.

The heater plate 12 is a disk-shaped plate, and the lower peripheral portion of the thickness of the disk is fitted in the through-hole 11 formed at the upper end of the chamber 10, and the edge of the through-hole 11 is formed. It is installed in a structure to close the through-hole 11 while being placed on the stepped portion 16 formed along it and seated.

At this time, the O-ring 20 may be interposed between the bottom surface of the heater plate 12 and the top surface of the stepped portion 16 in contact with each other as a means for maintaining airtightness.

Here, the heater plate 12 is formed with a plurality of fastening portions protruding from the edge of the disc, and bolts passing through the fastening portions at this time are fastened to the chamber 10 , so that the heater plate 12 is connected to the chamber 10 . ) can be installed in a structure that is integrally assembled on the side.

The bottom surface of the heater plate 12 installed in this way is exposed while forming the inner skylight surface of the chamber, and the heater 13 can be disposed on the bottom surface of the heater plate 12 facing the inner space of the chamber 10 at this time. do.

In addition, the heater plate 12 can be disassembled and assembled from the chamber 10 side by necessity, such as inspection or replacement of the heater 13 , and accordingly, the substrate preheating apparatus including the heater 13 and the like as a whole It has advantages in terms of management and maintenance.

For example, after loosening the bolts fastened to the heater plate 12 and the chamber 10 , holding the handle 29 installed on the heater plate 12 and lifting the heater plate 12 , the chamber 10 ) side, the entire heater plate 12 including the heater 13 and the heater cover 15 can be easily separated, and after a predetermined inspection or repair, the heater plate 12 can be removed from the chamber 10 . When the step portion 16 is seated and bolts are fastened, the entire heater plate 12 including the heater 13 and the heater cover 15 can be easily mounted on the chamber 10 side.

In particular, at least one row of bracing pipelines 18, for example, two rows of bracing pipelines 18 that intersect in an “X” shape, are formed on the bottom surface of the heater plate 12, and these bracing pipelines 18 are The bottom surface of the heater plate 12 is dug long to a certain depth and can be formed in the form of a straight rectangular groove through which both edges are penetrated.

Accordingly, when vacuum pressure is applied to the inside of the chamber 10, the vacuum pressure is also applied to the heater cover 15 covering the heater 13 as well as being installed on the bottom of the heater plate 12, such as quartz material, etc. The heater cover 15 of Since the vacuum pressure acting on the surface is balanced, it is possible to effectively prevent the heater cover 15 from being damaged.

In addition, a plurality of power stages 21 for supplying power to the heater 13 are installed on the upper surface of the heater plate 12 , and a plurality of temperature sensors 22 for measuring the temperature of the heater 13 at the same time is installed

At this time, the power stage 21 is connected to the terminal side of the heater 13 disposed on the bottom of the heater plate 12 in a state that penetrates the heater plate 12 , and at the same time, the temperature sensor 22 is also connected to the heater plate 12 . ) is positioned close to the heater 13 disposed on the bottom surface of the heater plate 12 in a state penetrating it.

Here, the installation height of the power stage 21 and the temperature sensor 22 provided in the heater plate 12 can be adjusted.

To this end, a hole 30 for installing a power stage is formed in the heater plate 12, and a central axis is penetrated in the hole 30 for installing a power stage/temperature sensor at this time, and a male screw part is formed at the upper end of the holder ( 26) is installed, and in the center of the holder 26 installed in this way, the connection terminal 31 connected to the heater 13 side and the temperature sensor 22 for sensing the temperature of the heater 13 are penetrated, and at this time The connection terminal 31 and the temperature sensor 22 are installed in a structure that can slide up and down in the holder 26 .

In addition, a cap 27 having a hole for exposing the connection terminal 31 and the temperature sensor 22 to the outside is installed at the center of the holder 26 while having a female screw portion fastened to the male screw portion at the upper end of the holder 26 . A pressing body 28 and an elastic body 32 are sequentially installed between the cap bottom surface and the holder top surface inside the cap 27 to be used. At this time, the pressing body 28 is the connection terminal 31 and the temperature sensor 22 . ) serves to press the elastic body 32 fitted around each outer circumferential surface.

Accordingly, when the cap 27 is fastened to the holder 26 installed in the power stage/temperature sensor installation hole 30 of the heater plate 12, the pressing body pressed down by the cap 27 ( 28 presses the elastic body 32, so that the connection terminal 31 and the temperature sensor 22 can be firmly and fixed in the holder 26, while the connection terminal 31 or the temperature sensor 22 ), when the cap 27 is released to some extent, the pressing body 28 and the elastic body 32 are loosened, and in this state, the connection terminal 31 or the temperature sensor 22 is pulled out or When put down, the height of the connection terminal 31 or the temperature sensor 22 can be adjusted, and when the cap 27 is tightened again after height adjustment in this way, the connection terminal 31 or the temperature sensor 22 can be adjusted height can be fixed.

In this way, by enabling the height adjustment of the power stage 21 and the temperature sensor 22 by the fastening structure and allowing them to be easily separated, there is an advantage in applying the heater 13 of various specifications as well as the power stage ( 21) or the temperature sensor 22 can be properly taken out or inserted, the position of the heater 13 or the position of the temperature sensor 22 can be adjusted, and at the same time, work related to wiring connection and the like can be performed very easily.

At this time, since the connection terminal 31 and the temperature sensor 22 of the power terminal 21 have a terminal shape, there is an advantage that they can be easily connected to the wire-side terminal during wiring work.

In addition, the heater plate 12 includes a digital sensor 33 as a means for measuring the internal temperature of the chamber 10 to which the wafer belongs.

The digital sensor 33 is installed at the upper end of the sensor support pipe 34 installed on one side of the heater plate 12, and the digital sensor 33 installed in this way is transmitted through the inside of the sensor support pipe 34 to the chamber ( 10) will be able to communicate with the inside.

Accordingly, the digital sensor 33 can measure the internal temperature of the chamber 10 and provide it to the controller (not shown), and the controller has the chamber internal temperature and temperature sensor obtained from the digital sensor 33 . Based on the heater temperature obtained from (22), it is possible to appropriately control the internal temperature of the chamber 10 and the temperature of the heater 13, and eventually, by controlling the chamber internal temperature and the heater temperature in a balanced way, the substrate can be more efficiently and Preheating can be done accurately to the set temperature.

As a preferred embodiment, the heater plate 12 is provided with cooling water for protecting various electrical components, sensors, etc. from the heat of the heater 13 .

To this end, a circular cooling water passage 24 is formed on the upper surface of the heater plate 12, and cooling nipples 35a and 35b are respectively installed at the inlet side and the outlet side of the cooling water passage 24 thus formed.

In addition, the upper portion of the cooling water passage 24 is closed by a cover 25 having a shape corresponding thereto.

Accordingly, the cooling water supplied through the one cooling nipple 35a circulates through the cooling water passage 24 and then discharged through the other cooling nipple 35b, and by the circulating action of the cooling water, the heater plate 12 ), as well as the power stage 21 and the temperature sensor 22 installed here can be cooled, so that parts such as the power stage 21 and the temperature sensor 22 can be protected from heater heat do.

In addition, the substrate preheating apparatus includes a heater 13 as a means for substantially heating the substrate.

The heater 13 is installed on the bottom surface of the heater plate 12 and fixed to the power stage 21 side, and serves to heat the substrate input into the chamber 10 in which a vacuum environment is created. .

Here, the heater 13 may be a halogen lamp type heater, a ceramic heater, a carbon heat, or the like.

The present invention provides an example in which a halogen lamp type heater is applied.

To this end, the heater 13 may be a halogen lamp type heater, and the heater 13 is inserted into the heater mounting groove 14 in the heater cover 15 installed on the bottom surface of the heater plate 12 . As such, it can be installed in a structure positioned above the inside of the chamber.

These heaters 13 may form a circle as a whole, and some may form a straight line, and the heaters 13 forming a circle may be formed in a plurality of concentric circles and having different diameters.

For example, the heater 13 is composed of a second heater and a third heater having a relatively larger diameter from a first heater having a relatively smallest diameter while being disposed at the center, and a second heater and a third heater having a relatively larger diameter as they are disposed toward the outer side. The first to third heaters of the can be arranged to form concentric circles.

In this case, the straight fourth heaters forming a “U” shape can be arranged side by side in the radial direction from the center to the outer side.

Each of these heaters 13 can be installed while making one-to-one matching in each heater mounting groove 14 having the same diameter.

In addition, the connection terminals 31 of the power terminal 21 are connected to both ends of each heater 13 so that each heater 13 can be connected to the electric wire side through the connection terminal 31 . Therefore, at this time, the heater 13 can heat the substrate disposed below while being heated by the power applied through the electric wire.

In particular, each of the heaters 13 is individually connected to the power supply side and can be independently controlled by a controller (not shown), so that the heating amount of the heater can be adjusted.

For example, since the first to fourth heaters are individually controlled by the controller, the maximum heater heating value can be secured when all four heaters 13 are operated, and when one heater 13 is operated, the minimum It is possible to secure the heating value of the heater.

Accordingly, various temperatures or environments are required, such as being able to appropriately adjust the preheating temperature of the substrate according to the environment of various process chambers requiring various temperature conditions by appropriately adjusting the number of operation of the heater 13 to control the amount of heat generated by the heater. It has the advantage of being able to actively cope with various process conditions that are subject to change.

In addition, the substrate preheating apparatus includes a heater cover 15 as a means for protecting the heater 13 .

The heater cover 15 has an upper open circular housing shape having the same size as the heater plate 12, and overlaps the edge of the heater plate 12 by using the edge of the circular housing. It is installed in a detachable structure by being placed on the step portion 16 together at the time of installation.

At this time, the upper end of the heater cover 15 can be in close contact with the bottom surface of the heater plate 12 excluding the holding pipe 18 .

Here, the heater cover 15 may be made of a transparent material such as quartz or glass.

In particular, a heater mounting groove 14 for accommodating the heater 13 is formed on the bottom surface of the heater cover 15 .

These heater mounting grooves 14 have a semi-circular cross section and form a circle as a whole, and are arranged concentrically while forming a circle of a slightly broken form, and can be made in plurality with different diameters, Some of the heater mounting grooves 14 may be formed in a straight shape.

For example, the heater mounting groove 14 is disposed at the center of the circular housing from the first heater mounting groove having the smallest diameter to the second heater mounting groove having a relatively larger diameter as it is disposed toward the outer side of the circular housing. and a third heater mounting groove. In this case, the first to third heater mounting grooves can be arranged concentrically.

In addition, the fourth heater mounting groove for accommodating the straight fourth heater forming a “U” shape can be arranged in parallel along the radial direction from the center toward the outer side.

In addition, the substrate preheating apparatus includes a damping box 23 as a means to prevent particles from flying when the vacuum pressure is discharged.

The damping box 23 is installed on one side of the chamber 10, for example, on the side surface forming a 90° angle with the gate 17 in the chamber 10, and the damping box 23 thus installed has a hole 19a. ) and communicates with the interior of the chamber 10 through the vent line.

The damping box 23 serves to prevent the generation of a vortex of exhaust gas when venting is performed together with the release of vacuum pressure, and as a result, it prevents particles in the exhaust gas from flying, effectively preventing contamination of the substrate or exhaust gas be able to do

7 is a cross-sectional view illustrating an operating state of an apparatus for preheating a substrate according to an embodiment of the present invention.

As shown in FIG. 7 , a predetermined semiconductor manufacturing process (eg, an implant process) is in progress.

First, before putting the substrate 100 into the process chamber, the substrate 100 mounted on the robot (not shown) is introduced into the chamber 10 through the gate 17 of the chamber 10, and the chamber ( 10) to maintain the standby state by seating the substrate on a substrate support (not shown) such as pins provided inside.

Next, when the robot returns and the gate 17 is closed, a vacuum pump (not shown) is operated to remove air from the chamber 10 to create a vacuum environment inside the chamber 10 .

Next, when a vacuum environment is created inside the chamber 10 , the heater 13 is operated at the same time, and continuously by the heat emitted from the heater 13 installed in the upper part (ceiling part) of the chamber 10 . The substrate 100 is heated by a top heating method.

At this time, the substrate 100 is instantaneously heated to a temperature of about 150 to 200° C. for about 5 minutes.

Next, the substrate 100 heated in advance to a predetermined temperature inside the chamber 10 is discharged from the chamber 10 by the operation of the robot, and then is continuously transferred and put into the process chamber to be subjected to process treatment. .

Here, the method of operating a load lock chamber, including a method of inserting and discharging a substrate by the robot, a method of seating the substrate, a method of opening and closing a gate, and a method of creating a vacuum in the chamber, is commonly known in the art. As long as it is a known method, it can be adopted without particular limitation.

In this way, since the substrate is put into the process chamber after being preheated to a predetermined temperature in a separate chamber before being subjected to a predetermined process in the process chamber, it is possible to shorten the heating time of the substrate in the process chamber, and Since the substrate can be preheated to a certain temperature by utilizing the waiting time in the chamber before entering the process chamber, it is possible to significantly increase the semiconductor manufacturing yield, such as increasing the substrate processing speed without stopping the flow of the substrate.

As described above, in the present invention, a new type of substrate preheating apparatus is provided in which a top heating type heater is installed in a chamber of a semiconductor manufacturing facility, and the substrate in the chamber is heated with the heater and then put into the process chamber. By utilizing the waiting time in the chamber, the substrate processing speed can be increased without stopping the substrate flow, such as preheating the substrate to a certain temperature, and the substrate heating time in the process chamber can be shortened, thus, the semiconductor manufacturing yield can be significantly improved.

10: chamber
11: through hole
12: heater plate
13: heater
14: heater mounting groove
15: heater cover
16: step part
17 : gate
18: hold pipe
19a, 19b: Hall
20 : O-ring
21: power stage
22: temperature sensor
23 : damping box
24: coolant passage
25 : cover
26: holder
27 : cap
28: pressurized body
29 : handle
30: Hall for power stage/temperature sensor installation
31: connection terminal
32: elastic body
33: digital sensor
34: sensor support tube
35a, 35b : cooling nipple

Claims (10)

It is installed in a structure coupled to the upper end of the chamber 10 to heat the substrate in the chamber 10 from the upper portion,
a heater plate 12 installed in a structure to form a chamber ceiling surface through a bottom surface while closing the through-hole 11 formed at the upper end of the chamber 10;
a heater 13 installed on the bottom surface of the heater plate 12 to heat the substrate input into the chamber 10 in which a vacuum environment is created;
Including, a substrate preheating apparatus, characterized in that it is capable of pre-heating the substrate to be put into the process chamber from the upper part before the input (pre).
The method according to claim 1,
The heater 13 is a halogen lamp type heater, and is installed on the bottom surface of the heater plate 12 and is disposed over the entire surface of the ceiling inside the chamber.
3. The method according to claim 2,
Each of the heaters 13 is individually connected to the power supply side, and each of the heaters 13 is characterized in that it can be independently controlled. substrate preheating device.
The method according to claim 1,
In addition to being installed on the bottom of the heater plate 12, it further includes a transparent heater cover 15 for protecting the heater 13 while accommodating the heater 13 inside using the heater mounting groove 14. substrate preheating device.
5. The method according to claim 4,
The heater mounting groove 14 is formed in a plurality of concentric circles while forming a circle and having different diameters. , Each of the heaters 13 is a substrate preheating apparatus, characterized in that it is installed while forming a one-to-one matching with each heater mounting groove (14) forming the same diameter.
The method according to claim 1,
The heater plate 12 is seated on the step portion 16 formed along the edge of the through hole 11 formed at the upper end of the chamber 10 and is installed in a structure that can be disassembled and assembled through bolt fastening. A substrate preheating device, characterized in that.
5. The method according to claim 4,
The substrate, characterized in that at least one row of vacuum conduits (18) are formed on the bottom surface of the heater plate (12) to prevent the heater cover (15) from being damaged by discharging the vacuum pressure acting in the heater cover (15). preheating device.
The method according to claim 1,
The substrate preheating apparatus further comprising a damping box 23 installed on one side of the chamber 10 and communicating with the inside of the chamber to prevent vortex generation during venting to prevent particles from flying.
The method according to claim 1,
A substrate preheating apparatus, characterized in that a cooling water passage (24) and a cover (25) for supplying cooling water to prevent overheating are formed on the upper surface of the heater plate (12).
The method according to claim 1,
A power stage 21 for supplying power to the heater 13 and a temperature sensor 22 for measuring the temperature of the heater 13 are installed on the heater plate 12, and the power stage 21 and the temperature The sensor 22 is installed in a structure in which the height can be adjusted through a screw fastening structure between the holder 26 and the cap 27 and the pressing action of the pressing body 28 on the inside thereof.

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