KR20220043424A - Polishing pad, manufacturing method thereof and preparing method of semiconductor device using the same - Google Patents

Abstract

The present invention relates to a polishing pad, a manufacturing method of the polishing pad, and a manufacturing method of a semiconductor device using the same. The polishing pad comprises an unexpanded solid foaming agent in a polishing composition when a polishing layer is manufactured to enable the solid foaming agent to be expanded during a hardening process to have a plurality of uniform pores inside the polishing layer to prevent a defect generated on a surface of a semiconductor substrate. Moreover, the present invention can provide the manufacturing method of a semiconductor device using the polishing pad.

Description

A polishing pad, a method of manufacturing a polishing pad, and a method of manufacturing a semiconductor device using the same

The present invention relates to a polishing pad used in a chemical mechanical planarization (CMP) process, a method of manufacturing the same, and a method of manufacturing a semiconductor device using the same.

In the chemical mechanical planarization (CMP) process of the semiconductor manufacturing process, in a state where a wafer is attached to a head and brought into contact with the surface of a polishing pad formed on a platen, a slurry is supplied to chemically prepare the wafer surface. It is a process of mechanically planarizing the uneven part of the wafer surface by moving the platen and the head relative to each other while reacting.

"Dishing" means that CMP polishing is a metal recess in a low area, such as an oxide cavity or trough, where the metal layer must remain parallel or coplanar with the underlying layer of the substrate wafer after CMP polishing, but does not. refers to a phenomenon that causes

The dishing problem has been recognized as a major problem in recent years as semiconductor wafers and devices become increasingly complex with microscopic features and more metallization layers. This trend calls for better performance for consumables used in polishing processes to maintain flatness and limit polishing defects.

Defects in these wafers and devices can cause electrical isolation or short circuits in conductive lines that render the semiconductor device inoperable. Abrasive defects can be reduced by using a soft polishing pad to reduce abrasive defects such as micro-scratches or chatter marks.

Also, CMP polishing of soft metal layers may reduce abrasive bonding through the use of softer CMP polishing pads.

However, while CMP polishing using a soft pad can improve defects in the polished substrate, such a soft pad may pose a problem of increased dishing on the metallized semiconductor wafer surface due to the flexible nature of the soft pad.

Accordingly, it is possible to reduce dishing on the substrate surface that may occur due to the CMP polishing process for the metal surface in the semiconductor wafer or device substrate, minimize polishing defects that may occur in the wafer, and improve polishing performance suitable for the process. There is a need for development of a polishing pad that can show.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a polishing pad, a method of manufacturing the polishing pad, and a method of manufacturing a semiconductor device using the same.

Another object of the present invention is to provide a polishing pad capable of preventing defects occurring on the surface of a semiconductor substrate by controlling the pore size of the polishing layer in the polishing pad to be uniformly formed.

Another object of the present invention is to include an unexpanded solid foaming agent in the polishing composition when the polishing layer is manufactured, and the solid foaming agent expands during the curing process to form a plurality of uniform pores in the polishing layer. To provide a method for manufacturing a pad.

Another object of the present invention is to provide a method of manufacturing a semiconductor device to which the polishing pad is applied.

In order to achieve the above object, a polishing pad according to an embodiment of the present invention includes a polishing layer, the polishing layer includes a plurality of pores, and a value according to Equation 1 is 0.5 to 1.5:

[Equation 1]

here,

D10 is the diameter of the pores on the 10% volume cumulative distribution,

D50 is the diameter of the pores on the 50% volume cumulative distribution,

D90 is the diameter of the pores on the 90% volume cumulative distribution.

A method of manufacturing a polishing pad according to another embodiment of the present invention includes the steps of: i) preparing a prepolymer composition; ii) preparing a composition for preparing an abrasive layer comprising the prepolymer composition, a foaming agent and a curing agent; and iii) curing the composition for preparing an abrasive layer to prepare an abrasive layer.

A method of manufacturing a semiconductor device according to another embodiment of the present invention includes: 1) providing a polishing pad including a polishing layer; and 2) polishing the semiconductor substrate while relatively rotating the polishing surface of the polishing layer so that the polished surface of the semiconductor substrate is in contact with the polishing surface.

In the present invention, the polishing pad includes an unexpanded solid foaming agent in the polishing composition when the polishing layer is manufactured, and the solid foaming agent expands during the curing process to form a plurality of pores with a uniform size in the polishing layer. By forming it, it is possible to prevent defects occurring on the surface of the semiconductor substrate.

In addition, the present invention may provide a method of manufacturing a semiconductor device to which the polishing pad is applied.

1 is a graph of a volume cumulative diameter according to an embodiment of the present invention.
2 is a conceptual diagram of a solid foaming agent included in the manufacture of an abrasive layer according to an embodiment of the present invention.
Figure 3 is a conceptual diagram relating to the foaming of the solid foaming agent during the manufacture of the abrasive layer according to an embodiment of the present invention.
4 is a schematic process diagram of a semiconductor device manufacturing process according to an embodiment of the present invention.
5 is an SEM measurement result of the pores of the polishing layer according to an embodiment of the present invention.
6 is an SEM measurement result of the pores of the abrasive layer according to an embodiment of the present invention.
7 is a SEM measurement result of the pores of the polishing layer according to an embodiment of the present invention.
8 is a SEM measurement result of the pores of the polishing layer according to an embodiment of the present invention.
9 is a SEM measurement result of the pores of the polishing layer according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail so that those of ordinary skill in the art can easily carry out the present invention. However, the present invention may be embodied in several different forms and is not limited to the embodiments described herein.

It should be understood that numbers expressing quantities of components, properties such as molecular weight, reaction conditions, etc. used in the present invention are modified by the term “about” in all instances.

In the present invention, unless otherwise stated, all percentages, parts, ratios, etc. are by weight.

In the present invention, when "included", it means that other components may be additionally included, rather than excluding other components, unless otherwise stated.

As used herein, “a plurality” refers to more than one.

In the present invention, "10% cumulative diameter by volume", "50% cumulative diameter by volume" and "90% cumulative diameter by volume" are particle diameters (diameters) representing 10%, 50%, and 90% of the cumulative frequency distribution of the volume particle diameter, respectively. am. In more detail, as shown in FIG. 1 , the Y-axis means volume (%) and the X-axis means diameter (㎛), and the cumulative frequency distribution of the pore volume with respect to the diameter of the pores increases as the diameter of the pores increases. , is the sum of the volumes of pores up to that diameter divided by the sum of the volumes of all pores. That is, the 10% volume cumulative diameter is when the volume of pores having a gradually large diameter from the pores having the smallest diameter is cumulatively added, and the cumulatively added volume is 10%, the corresponding diameter, that is, the largest means the diameter. In addition, the 50% volume cumulative diameter is when the volume of pores having a gradually larger diameter from the pores having the smallest diameter are cumulatively added, and when the cumulatively added volume is 50%, the corresponding diameter, that is, the largest means the diameter. In addition, the 90% volume cumulative diameter is when the volume of pores having a gradually large diameter from the pores having the smallest diameter is cumulatively added, and when the cumulatively added volume is 90%, the corresponding diameter, that is, the largest means the diameter.

A polishing pad according to an embodiment of the present invention includes a polishing layer, the polishing layer includes a plurality of pores, and a value according to Equation 1 is 0.5 to 1.5:

[Equation 1]

here,

D10 is the diameter of the pores on the 10% volume cumulative distribution,

D50 is the diameter of the pores on the 50% volume cumulative distribution,

D90 is the diameter of the pores on the 90% volume cumulative distribution.

In the conventional manufacturing of the polishing layer in the polishing pad, pores having an irregular size and arrangement are formed by a physical method or a chemical method. According to the conventional method of manufacturing the polishing layer, pores of various shapes and sizes are arranged in irregularly dispersed forms on the surface and inside the polishing layer made of a polymer material.

Among the conventional methods of forming pores or holes in the abrasive layer, a physical method is to mix a micro-sized material with the forming material of the abrasive layer. In this case, micro-sized materials with pores should be put in to mix well with the polymer at the beginning of the abrasive layer manufacturing.

However, in a physical method, it is difficult to initially mix well the micro-sized material with the polymer, and the size of the micro-sized material is also not uniform.

In general, the average pore diameter formed by a physical method is about 100 micrometers, and the diameter of each pore ranges from several tens of micrometers to several hundreds of micrometers. This is a phenomenon that occurs because of the limitations of the technology for making qigong. In addition, when the polishing pad is manufactured, the distribution is also different for each position due to gravity, so it is not easy to manufacture a polishing layer having uniform performance.

The abrasive layer manufactured by the above physical method has a problem in that the size or distribution of the formed pores is not constant, so that when the semiconductor substrate is polished with high precision, the efficiency varies depending on the area or time in contact with the polishing layer.

Alternatively, by a chemical method, pores can be formed on the CMP polishing pad, and when water or a liquid that can easily change to a gaseous state is put together with a polymer solution and heated to a low temperature, the liquid turns into a gas and the pores use the phenomena

However, this method of forming pores inside using a gas also has a problem in that it is difficult to keep the size of the pores constant.

A polishing pad is a consumable item used to polish the surface of a semiconductor substrate, and is an essential component. The slurry exists between the polishing pad and the surface of the plate conductor substrate during the polishing process and chemically and mechanically polishes the surface of the semiconductor substrate, and the used slurry is discharged to the outside.

For the slurry to remain on the polishing pad for a period of time, the polishing pad must be able to store the slurry. The slurry storage function of the polishing pad may be performed by pores or grooves formed in the polishing pad.

That is, the slurry penetrates into the pores or grooves formed in the polishing pad to efficiently polish the surface of the semiconductor substrate for a long time. In order for the polishing pad to suppress the flow of slurry as much as possible and achieve good polishing efficiency, the shape of pores or grooves must be well controlled, and physical properties such as hardness of the polishing pad must be maintained in optimum conditions.

Accordingly, in the polishing pad of the present invention, defects occurring during the polishing process can be prevented by controlling the plurality of pores formed in the polishing layer to have a predetermined size.

More specifically, the polishing layer has a plurality of pores and is 0.5 to 1.5, preferably 0.5 to 1.1, according to the following formula:

[Equation 1]

here,

D10 is the diameter of the pores on the 10% volume cumulative distribution,

D50 is the diameter of the pores on the 50% volume cumulative distribution,

D90 is the diameter of the pores on the 90% volume cumulative distribution.

Equation 1 means the relationship to the diameter of the pores on the cumulative volume distribution, and compared to the diameter of the pores on the 50% cumulative distribution, the size difference for the pores on the 90% cumulative distribution and the 10% on the cumulative distribution Through the ratio of the size difference to the pores, the degree of uniformity of the plurality of pores formed in the abrasive layer can be confirmed.

When the value according to Equation 1 is included within the scope of the present invention, it means that the size of the pores on the cumulative volume distribution is uniform, which means that the plurality of pores formed in the polishing layer are formed in a uniform size distribution, In use, it is possible to prevent the occurrence of defects in the semiconductor substrate.

In order to form uniform pores in the abrasive layer of the present invention, the preheating temperature of the mold and the type of foaming agent play an important role when the composition for preparing the abrasive layer is injected into the mold.

The composition including the urethane-based prepolymer, the curing agent, and the foaming agent is injected into a preheated mold and cured, and the preheating temperature of the mold is 50 to 150°C.

As will be described later, the foaming agent included for preparing the abrasive layer of the present invention is an unexpanded particle, and the foaming agent is included in the composition for preparing the abrasive layer, injected into a preheated mold, and then foamed during the curing process. to form a plurality of pores.

At this time, a difference occurs in the heat and pressure provided to the foaming agent by the preheated mold, and a difference appears in the diameter of the pores generated by the difference.

The preheating temperature of the mold may be 50 to 150 ℃, preferably 90 to 140 ℃, more preferably 100 to 130 ℃. When the composition for preparing the polishing layer is injected into the preheated mold within the above range, the diameter of the pores formed in the polishing layer may be uniformly formed.

A 50% volume cumulative diameter (D50) of the pores formed in the polishing layer may be 20 to 65 μm. When the pore diameter is formed within the above range, when applied to a polishing process, it is possible to control the polishing rate and prevent the occurrence of defects in the semiconductor substrate.

A difference appears in the diameter of D50 depending on the preheating temperature of the mold. Specifically, when the preheating temperature of the mold is 100° C., D50 is 20 to 25 μm, preferably 21 to 22 μm, and the preheating temperature of the mold is 115 ° C., D50 is 35 to 55 µm, preferably 40 to 50 µm, and when the preheating temperature of the mold is 130 ° C, D50 is 50 to 70 µm, preferably 55 to 65 µm. there is.

As described above, as the preheating temperature of the mold increases, heat and pressure applied to the non-expanded particles included in the blowing agent increase, and it can be seen that the diameter of the generated pores increases.

When curing is performed within the preheating temperature range of the mold of the present invention, pores formed in the polishing layer have an appropriate diameter, thereby preventing the occurrence of defects in the semiconductor substrate even when applied to the polishing process.

As described above, a physical method or a chemical method is used to form the pores in the abrasive layer, and a chemical method is recently used for manufacturing the abrasive layer.

That is, a liquid foaming agent or gas is injected into the foaming agent to form pores, but in the case of the above method, since the liquid foaming agent is vaporized during the curing process to form pores, it is not easy to control the size of the formed pores, and the gas Even in the case of injection, it is not easy to control the size when forming pores.

The blowing agent of the present invention is an unexpanded particle 10 as shown in FIG. 2 , and the unexpanded particle 10 is a resin material shell 11 and an expansion-inducing component 12 enclosed in the shell. may include

The unexpanded particles 10 are non-expanded particles, and refer to particles whose final size is determined by being expanded by heat or pressure applied during the manufacturing process of the abrasive layer.

The unexpanded particles 10 may be foamed by a curing process to form a plurality of pores in the abrasive layer.

In order to prepare a conventional abrasive layer, the expanded particles used are not separately expanded during the curing process. However, the blowing agent of the present invention may include non-expanded particles as the blowing agent 10, and using the non-expanded particles 10, expand 20 during the curing process to form a plurality of pores. .

In order to prepare the abrasive layer of the present invention, as described above, the composition for preparing the abrasive layer is injected into the preheated mold, the cured product is used, and the mold is preheated to control the size of pores formed in the abrasive layer. A plurality of pores having a uniform size distribution can be formed by controlling the temperature within a certain range and using the non-expanded particles as a blowing agent to expand during the curing process.

As described above, by controlling the preheating temperature of the mold to control the diameter size of the pores within a certain range, and forming pores having a uniform size distribution using non-expanded particles as a blowing agent, the polishing process of the present invention When the polishing layer is applied, it is possible to prevent the occurrence of defects in the semiconductor substrate.

The non-expandable particles 10 include a resin material shell 11; And it may include an expansion-inducing component (12) present in the interior enclosed by the shell.

For example, the shell 11 may include a thermoplastic resin, and the thermoplastic resin is a group consisting of a vinylidene chloride-based copolymer, an acrylonitrile-based copolymer, a methacrylonitrile-based copolymer, and an acrylic-based copolymer. It may be at least one selected from

The expansion-inducing component 12 may include one selected from the group consisting of a hydrocarbon compound, a chlorofluoro compound, a tetraalkylsilane compound, and combinations thereof.

Specifically, the hydrocarbon compound is ethane, ethylene, propane, propene, n-butane, isobutene, n-butene, isobutene, n-pentane, isopentane, neopentane, n-hexane, heptane, petroleum ether, and their It may include one selected from the group consisting of combinations.

The chlorofluoro compound is a trichlorofluoromethane (trichlorofluoromethane, CCl3F), dichlorodifluoromethane (dichlorodifluoromethane, CCl2F2), chlorotrifluoromethane (chlorotrifluoromethane, CClF3), tetrafluoroethylene (tetrafluoroethylene, CClF ₂ -CClF) ₂ ) and may include one selected from the group consisting of combinations thereof.

The tetraalkylsilane compound is selected from the group consisting of tetramethylsilane, trimethylethylsilane, trimethylisopropylsilane, trimethyl-n-propylsilane, and combinations thereof. may contain one.

Specifically, the non-expanded particles 10 include a shell 11 of a thermoplastic resin and a hydrocarbon gas 12 inside the shell. The internal hydrocarbon gas serves to expand the thermoplastic shell by heat applied during the curing process.

As described above, when the size of the polymer shell is expanded by the expansion and the internal hydrocarbon gas is discharged to the outside, pores in the abrasive layer can be formed.

The content of the solid foaming agent may be 0.5 parts by weight to 10 parts by weight, for example, 1 part by weight to 7 parts by weight, for example, 1 part by weight to 5 parts by weight based on 100 parts by weight of the urethane-based prepolymer. The type and content of the solid foaming agent may be designed according to the desired pore structure and physical properties of the polishing layer.

The composition for preparing the abrasive layer of the present invention may include one selected from the group consisting of an expanded solid foaming agent, a gas phase foaming agent, a liquid foaming agent, and combinations thereof, as well as the non-expanded solid foaming agent described above. .

The gas-phase foaming agent may include an inert gas. The gas-phase foaming agent may be used as a pore-forming element by being added during a reaction between the urethane-based prepolymer and the curing agent.

The type of the inert gas is not particularly limited as long as it does not participate in the reaction between the urethane-based prepolymer and the curing agent. For example, the inert gas may include one selected from the group consisting of nitrogen gas (N ₂ ), argon gas (Ar), helium gas (He), and combinations thereof. Specifically, the inert gas may include nitrogen gas (N2) or argon gas (Ar).

The type and content of the gas-phase foaming agent can be designed according to the desired pore structure and physical properties of the abrasive layer.

The particles of the thermally expanded solid foaming agent may be particles having an average particle diameter of about 5 μm to about 200 μm. The average particle diameter of the thermally expanded particles is about 5 μm to about 100 μm, for example, about 10 μm to about 80 μm, for example, about 20 μm to about 70 μm, for example, about 20 μm to about 50 μm. μm, for example from about 30 μm to about 70 μm, such as from about 25 μm to 45 μm, such as from about 40 μm to about 70 μm, such as from about 40 μm to about 60 μm there is. The average particle diameter is defined as the D50 of the thermally expanded particles.

In one embodiment, the density of the thermally expanded particles is from about 30 kg/m to about 80 kg/m, such as from about 35 kg/m to about 80 kg/m, such as from about 35 kg/m to about 75 kg/m, For example, it may be from about 38 kg/m to about 72 kg/m, such as from about 40 kg/m to about 75 kg/m, such as from about 40 kg/m to about 72 kg/m.

In one embodiment, the foaming agent may include a gas phase foaming agent. For example, the foaming agent may include a solid foaming agent and a gas phase foaming agent. Matters regarding the solid foaming agent are the same as described above.

The gas-phase foaming agent may include nitrogen gas.

The vapor-phase foaming agent may be injected through a predetermined injection line while the urethane-based prepolymer, the solid-state foaming agent, and the curing agent are mixed. The injection rate of the gas phase blowing agent is from about 0.8 L/min to about 2.0 L/min, such as from about 0.8 L/min to about 1.8 L/min, such as from about 0.8 L/min to about 1.7 L/min. , for example, from about 1.0 L/min to about 2.0 L/min, such as from about 1.0 L/min to about 1.8 L/min, such as from about 1.0 L/min to about 1.7 L/min there is.

In one embodiment, the polishing layer may include an abrasive layer including a cured product formed from a composition including a urethane-based prepolymer, a curing agent, and a foaming agent. The foaming agent is the same as described above, and will be excluded from the following description.

Each component included in the composition will be specifically described below.

The term 'prepolymer' refers to a polymer having a relatively low molecular weight in which the polymerization degree is stopped at an intermediate stage to facilitate molding in the production of a cured product. The prepolymer can be molded into a final cured product either on its own or after reacting with other polymerizable compounds.

In one embodiment, the urethane-based prepolymer may be prepared by reacting an isocyanate compound with a polyol.

As the isocyanate compound used in the preparation of the urethane-based prepolymer, one selected from the group consisting of aromatic diisocyanate, aliphatic diisocyanate, cycloaliphatic diisocyanate, and combinations thereof may be used.

The isocyanate compound is, for example, 2,4-toluenediisocyanate (2,4-TDI), 2,6-toluenediisocyanate (2,6-toluenediisocyanate, 2,6-TDI) Naphthalene-1,5-diisocyanate, para-phenylenediisocyanate, tolidinediisocyanate, 4,4'-diphenylmethane diisocyanate (4,4) It may include one selected from the group consisting of '-diphenylmethanediisocyanate), hexamethylenediisocyanate, dicyclohexylmethanediisocyanate, isophorone diisocyanate, and combinations thereof.

The 'polyol' refers to a compound including at least two hydroxyl groups (-OH) per molecule. The polyol is, for example, one selected from the group consisting of polyether polyol, polyester polyol, polycarbonate polyol, acrylic polyol, and combinations thereof. may include

The polyol is, for example, polytetramethylene ether glycol, polypropylene ether glycol, ethylene glycol, 1,2-propylene glycol, 1,3-propylene glycol, 1,2-butanediol, 1,3-butanediol, 2-methyl -1,3-propanediol, 1,4-butanediol, neopentyl glycol, 1,5-pentanediol, 3-methyl-1,5-pentanediol, 1,6-hexanediol, diethylene glycol, dipropylene glycol , may include one selected from the group consisting of tripropylene glycol and combinations thereof.

The polyol may have a weight average molecular weight (Mw) of about 100 g/mol to about 3,000 g/mol. The polyol may have a weight average of, for example, from about 100 g/mol to about 3,000 g/mol, such as from about 100 g/mol to about 2,000 g/mol, such as from about 100 g/mol to about 1,800 g/mol. It may have a molecular weight (Mw).

In one embodiment, the polyol is a low molecular weight polyol having a weight average molecular weight (Mw) of about 100 g/mol or more and less than about 300 g/mol, and a high molecular weight having a weight average molecular weight (Mw) of about 300 g/mol or more and about 1800 g/mol or less polyols.

The urethane-based prepolymer may have a weight average molecular weight (Mw) of about 500 g/mol to about 3,000 g/mol. The urethane-based prepolymer may have a weight average molecular weight (Mw) of, for example, about 600 g/mol to about 2,000 g/mol, for example, about 800 g/mol to about 1,000 g/mol.

In one embodiment, the isocyanate compound for preparing the urethane-based prepolymer may include an aromatic diisocyanate compound, and the aromatic diisocyanate compound is, for example, 2,4-toluene diisocyanate (2,4-TDI) and 2,6-toluenediisocyanate (2,6-TDI). The polyol compound for preparing the urethane-based prepolymer may include polytetramethylene ether glycol (PTMEG) and diethylene glycol (DEG).

In another embodiment, the isocyanate compound for preparing the urethane-based prepolymer may include an aromatic diisocyanate compound and an alicyclic diisocyanate compound, for example, the aromatic diisocyanate compound is 2,4-toluene diisocyanate (2 ,4-TDI) and 2,6-toluene diisocyanate (2,6-TDI), and the alicyclic diisocyanate compound may include dicyclohexylmethane diisocyanate (H12MDI). The polyol compound for preparing the urethane-based prepolymer may include polytetramethylene ether glycol (PTMEG) and diethylene glycol (DEG).

The urethane-based prepolymer has an isocyanate end group content (NCO%) of about 5 wt% to about 11 wt%, for example, about 5 wt% to about 10 wt%, for example, about 5 wt% to about 8 wt% , for example, from about 8% to about 10% by weight. When the NCO% is within the above range, the physical properties of the polishing layer in the appropriate polishing pad are maintained, the polishing performance required for the polishing process such as the polishing rate and the polishing profile is maintained, and defects that may be generated on the wafer during the polishing process are minimized. can

In addition, by controlling the polishing selectivity (Ox RR/Nt RR) of the oxide film and the nitride film, dishing, recess, and erosion are prevented, and the surface in the wafer is planarized. can be achieved

The isocyanate end group content (NCO%) of the urethane-based prepolymer is determined by the type and content of the isocyanate compound and polyol compound for preparing the urethane-based prepolymer, the process conditions such as temperature, pressure, and time of the process for preparing the urethane-based prepolymer, and the urethane-based prepolymer It can be designed by comprehensively controlling the type and content of additives used in the preparation of the prepolymer.

The curing agent is a compound for chemically reacting with the urethane-based prepolymer to form a final cured structure in the polishing layer, and may include, for example, an amine compound or an alcohol compound. Specifically, the curing agent may include one selected from the group consisting of aromatic amines, aliphatic amines, aromatic alcohols, aliphatic alcohols, and combinations thereof.

For example, the curing agent is 4,4'-methylenebis(2-chloroaniline) (4,4'-methylenebis(2-chloroaniline); MOCA), diethyltoluenediamine (DETDA), diaminodiphenyl Methane (diaminodiphenylmethane), dimethyl thio-toluene diamine (DMTDA), propanediol bis p-aminobenzoate (propanediol bis p-aminobenzoate), Methylene bis-methylanthranilate, diaminodiphenylsulfone (diaminodiphenylsulfone), m -xylylenediamine, isophoronediamine, ethylenediamine, diethylenetriamine, triethylenetetramine, polypropylenediamine, polypropylenetriamine (polypropylenetriamine), bis (4-amino-3-chlorophenyl) methane (bis (4-amino-3-chlorophenyl) methane), and may include one selected from the group consisting of combinations thereof.

The amount of the curing agent is about 18 parts by weight to about 27 parts by weight, for example, about 19 parts by weight to about 26 parts by weight, for example, about 20 parts by weight to about 26 parts by weight based on 100 parts by weight of the urethane-based prepolymer. can When the content of the curing agent satisfies the above range, it may be more advantageous to realize the desired performance of the polishing pad.

The composition for preparing the polishing layer may further include other additives such as a surfactant and a reaction rate controlling agent. The names such as 'surfactant' and 'reaction rate regulator' are arbitrary names based on the main role of the corresponding substance, and each corresponding substance does not necessarily perform only a function limited to the role by the corresponding name.

The surfactant is not particularly limited as long as it is a material that serves to prevent aggregation or overlapping of pores. For example, the surfactant may include a silicone-based surfactant.

The surfactant may be used in an amount of about 0.2 parts by weight to about 2 parts by weight based on 100 parts by weight of the urethane-based prepolymer. Specifically, the surfactant is about 0.2 parts by weight to about 1.9 parts by weight, for example, about 0.2 parts by weight to about 1.8 parts by weight, for example, about 0.2 parts by weight to about 1.7 parts by weight based on 100 parts by weight of the urethane-based prepolymer. It may be included in an amount of, for example, about 0.2 parts by weight to about 1.6 parts by weight, for example, about 0.2 parts by weight to about 1.5 parts by weight, for example, about 0.5 parts by weight to 1.5 parts by weight. When the surfactant is included in an amount within the above range, pores derived from the gas-phase foaming agent may be stably formed and maintained in the mold.

The reaction rate controlling agent serves to promote or delay the reaction, and depending on the purpose, a reaction accelerator, a reaction retarder, or both may be used. The reaction rate controlling agent may include a reaction accelerator. For example, the reaction accelerator may be one or more reaction accelerators selected from the group consisting of a tertiary amine-based compound and an organometallic compound.

Specifically, the reaction rate controlling agent is triethylenediamine, dimethylethanolamine, tetramethylbutanediamine, 2-methyl-triethylenediamine, dimethylcyclohexylamine, triethylamine, triisopropanolamine, 1,4-diazabicyclo( 2,2,2)octane, bis(2-methylaminoethyl)ether, trimethylaminoethylethanolamine, N,N,N,N,N''-pentamethyldiethylenetriamine, dimethylaminoethylamine, dimethylamino Propylamine, benzyldimethylamine, N-ethylmorpholine, N,N-dimethylaminoethylmorpholine, N,N-dimethylcyclohexylamine, 2-methyl-2-azanovonein, dibutyltin dilaurate, Contains at least one selected from the group consisting of stannous octoate, dibutyltin diacetate, dioctyltin diacetate, dibutyltin maleate, dibutyltin di-2-ethylhexanoate and dibutyltin dimercaptide can do. Specifically, the reaction rate controlling agent may include at least one selected from the group consisting of benzyldimethylamine, N,N-dimethylcyclohexylamine and triethylamine.

The reaction rate controlling agent may be used in an amount of about 0.05 parts by weight to about 2 parts by weight based on 100 parts by weight of the urethane-based prepolymer. Specifically, the reaction rate controlling agent is about 0.05 parts by weight to about 1.8 parts by weight, for example, about 0.05 parts by weight to about 1.7 parts by weight, for example, about 0.05 parts by weight to about 100 parts by weight of the urethane-based prepolymer. 1.6 parts by weight, such as about 0.1 parts by weight to about 1.5 parts by weight, such as about 0.1 parts by weight to about 0.3 parts by weight, such as about 0.2 parts by weight to about 1.8 parts by weight, for example, about 0.2 parts by weight to about 1.7 parts by weight, such as about 0.2 parts by weight to about 1.6 parts by weight, such as about 0.2 parts by weight to about 1.5 parts by weight, such as about 0.5 parts by weight to about 1 parts by weight. It can be used in negative amounts. When the reaction rate controlling agent is used in the above-described content range, the curing reaction rate of the prepolymer composition may be appropriately controlled to form an abrasive layer having pores of a desired size and hardness.

When the polishing pad includes a cushion layer, the cushion layer serves to absorb and disperse an external impact applied to the polishing layer while supporting the polishing layer, thereby causing damage to the polishing object during the polishing process to which the polishing pad is applied. And it is possible to minimize the occurrence of defects.

The cushion layer may include, but is not limited to, nonwoven fabric or suede.

In one embodiment, the cushion layer may be a resin-impregnated nonwoven fabric. The nonwoven fabric may be a fiber nonwoven fabric including one selected from the group consisting of polyester fibers, polyamide fibers, polypropylene fibers, polyethylene fibers, and combinations thereof.

The resin impregnated into the nonwoven fabric is a polyurethane resin, polybutadiene resin, styrene-butadiene copolymer resin, styrene-butadiene-styrene copolymer resin, acrylonitrile-butadiene copolymer resin, styrene-ethylene-butadiene-styrene copolymer resin, silicone rubber resin , it may include one selected from the group consisting of a polyester-based elastomer resin, a polyamide-based elastomer resin, and combinations thereof.

Hereinafter, a method of manufacturing the polishing pad will be described in detail.

In another embodiment according to the present invention, the method comprising the steps of preparing a prepolymer composition; preparing a composition for preparing an abrasive layer comprising the prepolymer composition, a foaming agent and a curing agent; and curing the composition for preparing the polishing layer to prepare a polishing layer.

The preparing of the prepolymer composition may be a process of preparing a urethane-based prepolymer by reacting a diisocyanate compound and a polyol compound. The diisocyanate compound and the polyol compound are the same as those described above with respect to the polishing pad.

The isocyanate group (NCO group) content of the prepolymer composition is from about 5% to about 15% by weight, for example, from about 5% to about 8% by weight, for example, from about 5% to about 7% by weight, For example, from about 8% to about 15% by weight, such as from about 8% to about 14% by weight, such as from about 8% to about 12% by weight, such as from 8% to about 12% by weight It may be about 10% by weight.

The isocyanate group content of the prepolymer composition may be derived from terminal isocyanate groups of the urethane-based prepolymer, unreacted unreacted isocyanate groups in the diisocyanate compound, and the like.

The viscosity of the prepolymer composition may be from about 100 cps to about 1,000 cps at about 80° C., for example, from about 200 cps to about 800 cps, for example, from about 200 cps to about 600 cps, for example, It may be from about 200 cps to about 550 cps, for example, from about 300 cps to about 500 cps.

The foaming agent may be included as an unexpanded solid foaming agent as described above, and a foaming agent selected from the group consisting of an expanded solid foaming agent, a liquid foaming agent, a gaseous foaming agent, and a mixture thereof may be mixed with the unexpanded solid foaming agent.

For example, it may include an unexpanded solid foaming agent and an expanded solid foaming agent, may include an unexpanded solid foaming agent, an expanded solid foaming agent, and a gas phase foaming agent, and may include an unexpanded solid foaming agent and a liquid foaming agent. , may include an unexpanded solid foaming agent, a liquid foaming agent and a gas phase foaming agent, and may include an unexpanded solid foaming agent, an expanded solid foaming agent, a liquid foaming agent and a gas phase foaming agent, wherein the foaming agent comprises an unexpanded solid foaming agent By including, the type and content of the foaming agent can be designed according to the desired pore structure and physical properties of the abrasive layer.

When the foaming agent includes a solid foaming agent, preparing the composition for preparing an abrasive layer may include preparing a first preliminary composition by mixing the prepolymer composition and the solid foaming agent; and mixing the first preliminary composition and a curing agent to prepare a second preliminary composition.

The viscosity of the first preliminary composition may be from about 1,000 cps to about 2,000 cps at about 80° C., for example, from about 1,000 cps to about 1,800 cps, for example, from about 1,000 cps to about 1,600 cps. may be, for example, about 1,000 cps to about 1,500 cps.

When the foaming agent includes a gas-phase foaming agent, preparing the composition for preparing the polishing layer may include preparing a third preliminary composition including the prepolymer composition and the curing agent; and injecting the gas-phase foaming agent into the third preliminary composition to prepare a fourth preliminary composition.

In one embodiment, the third preliminary composition may further include a solid foaming agent.

In one embodiment, the process of manufacturing the polishing layer comprises: preparing a mold preheated to a first temperature; and injecting and curing the composition for preparing the polishing layer into the preheated mold; and post-curing the cured composition for preparing the polishing layer under a second temperature condition higher than the preheating temperature.

In one embodiment, the first temperature may be about 60 °C to about 100 °C, for example, about 65 °C to about 95 °C, for example, about 70 °C to about 90 °C.

In one embodiment, the second temperature may be from about 100°C to about 130°C, for example, from about 100°C to 125°C, for example, from about 100°C to about 120°C.

The step of curing the composition for preparing an abrasive layer under the first temperature is about 5 minutes to about 60 minutes, for example, about 5 minutes to about 40 minutes, for example, about 5 minutes to about 30 minutes, for example , from about 5 minutes to about 25 minutes.

The step of post-curing the composition for preparing an abrasive layer cured under the first temperature under the second temperature is about 5 hours to about 30 hours, for example, about 5 hours to about 25 hours, for example, about 10 hours to about 10 hours. about 30 hours, such as about 10 hours to about 25 hours, such as about 12 hours to about 24 hours, such as about 15 hours to about 24 hours.

The solid foaming agent of the present invention is non-expanded particles, and the non-expanded particles included in the composition for preparing an abrasive layer are expanded by heat and pressure provided during the curing process to form a plurality of pores in the abrasive layer. .

Specifically, as shown in FIG. 3, when the composition for preparing an abrasive layer is injected into a preheated mold and the curing process 30 proceeds, the non-expanded particles 10 included in the composition for preparing an abrasive layer are expanded and a plurality of pores ( 40) is formed.

The method of manufacturing the polishing pad may include processing at least one surface of the polishing layer. The processing step may be to form a groove (groove).

In another embodiment, the step of machining at least one surface of the polishing layer comprises the steps of forming a groove (groove) on at least one surface of the polishing layer (1); line turning (2) at least one surface of the abrasive layer; and roughening at least one surface of the polishing layer (3).

In the step (1), the groove (groove) is a concentric circular groove formed spaced apart from the center of the polishing layer at a predetermined interval; and at least one of a radial groove continuously connected from the center of the polishing layer to an edge of the polishing layer.

In the step (2), the line turning may be performed by using a cutting tool to cut the abrasive layer by a predetermined thickness.

In step (3), the roughening may be performed by processing the surface of the abrasive layer with a sanding roller.

The method of manufacturing the polishing pad may further include laminating a cushion layer on the back surface of the polishing surface of the polishing layer.

The abrasive layer and the cushion layer may be laminated using a heat-sealing adhesive.

The heat sealing adhesive is applied on the back surface of the polishing surface of the polishing layer, the heat sealing adhesive is applied on the surface to be in contact with the polishing layer of the cushion layer, and the surfaces to which the respective heat sealing adhesives are applied are in contact After laminating the abrasive layer and the cushion layer to the surface, the two layers may be fusion-bonded using a pressure roller.

In yet another embodiment, the method comprising: providing a polishing pad including an abrasive layer; and grinding the polishing object while relatively rotating the polishing surface of the polishing layer so that the polished surface of the polishing object is in contact with the polishing surface.

4 is a schematic flowchart of a semiconductor device manufacturing process according to an exemplary embodiment. Referring to FIG. 4 , after the polishing pad 110 according to the embodiment is mounted on the surface plate 120 , the semiconductor substrate 130 to be polished is disposed on the polishing pad 110 . At this time, the polished surface of the semiconductor substrate 130 is in direct contact with the polishing surface of the polishing pad 110 . For polishing, the polishing slurry 150 may be sprayed on the polishing pad through the nozzle 140 . The flow rate of the polishing slurry 150 supplied through the nozzle 140 may be selected according to the purpose within the range of about 10 cm 3 /min to about 1,000 cm 3 /min, for example, from about 50 cm 3 /min to about It may be 500 ㎤ / min, but is not limited thereto.

Thereafter, the semiconductor substrate 130 and the polishing pad 110 may be rotated relative to each other, so that the surface of the semiconductor substrate 130 may be polished. In this case, the rotation direction of the semiconductor substrate 130 and the rotation direction of the polishing pad 110 may be in the same direction or in opposite directions. The rotation speed of the semiconductor substrate 130 and the polishing pad 110 may be selected depending on the purpose in the range of about 10 rpm to about 500 rpm, respectively, for example, it may be about 30 rpm to about 200 rpm, However, the present invention is not limited thereto.

The semiconductor substrate 130 is mounted on the polishing head 160 and is pressed against the polishing surface of the polishing pad 110 by a predetermined load to abut the surface, and then the surface may be polished. The load applied to the polishing surface of the polishing pad 110 on the surface of the semiconductor substrate 130 by the polishing head 160 may be selected according to the purpose in the range of about 1 gf/cm 2 to about 1,000 gf/cm 2 . and may be, for example, about 10 gf/cm 2 to about 800 gf/cm 2 , but is not limited thereto.

In one embodiment, in the method of manufacturing the semiconductor device, in order to maintain the polished surface of the polishing pad 110 in a state suitable for polishing, the semiconductor substrate 130 is polished and the conditioner 170 is used simultaneously with the polishing. The method may further include processing the polishing surface of the pad 110 .

In the polishing pad including the polishing layer of the present invention, the target film quality is silicon oxide, the polishing load is 4.0 psi, the polishing pad is rotated at 150 rpm, the calcined ceria slurry is injected at a speed of 250 ml/min, and the surface plate is rotated at 150 rpm When the polishing process is performed by rotating for 60 seconds, the polishing rate of the oxide film according to the polishing process is 2,000 to 4,000 Å/min.

When the polishing pad including the polishing layer of the present invention is applied to the polishing process of the oxide film, it is possible to provide a polishing pad that not only exhibits a polishing rate within the above range but also prevents occurrence of defects.

Hereinafter, specific embodiments of the present invention are presented. However, the examples described below are only for specifically illustrating or explaining the present invention, and the present invention is not limited thereto.

Example 1

Manufacture of polishing pad

TDI, H ₁₂ MDI, polytetramethylene ether glycol and diethylene glycol were put into a four-neck flask and reacted at 80 ° C for 3 hours to obtain a prepolymer having an NCO% of 8 to 12%. prepared.

In a casting machine equipped with a prepolymer, curing agent, an inert gas injection line, and a liquid foaming agent injection line for the production of the top pad, the prepared prepolymer is filled in the prepolymer tank, and the curing agent tank is filled with bis(4-amino- 3-chlorophenyl) methane (Bis (4-amino-3-chlorophenyl) methane) (Ishihara Corporation) was charged, nitrogen (N ₂ ) as an inert gas, and FC3283 (3M Corporation) as a liquid foaming agent were prepared.

A solid foaming agent (Akzonobel, 551DU40) and a silicone-based surfactant (Evonik) were mixed with the prepolymer in a separate line.

At the time of casting, the equivalent of the prepolymer and the curing agent is adjusted at 1:1 and discharged at a rate of 10 kg per minute, the amount of inert gas nitrogen (N ₂ ) is injected with respect to the volume with respect to the total flow amount, and the mixing head (Mixing Head), after mixing each injection raw material, preheated to 100 ℃ It was injected and cured into a mold with a width of 1000 mm, a length of 1000 mm and a height of 3 mm. At this time, by controlling the amount of nitrogen in the inert gas, the density was adjusted to 0.7 to 0.9 and injected into the mold, to prepare a porous polyurethane sheet.

Thereafter, the surface of the prepared porous polyurethane sheet was ground using a grinding machine, and through a process of grooved using a tip, an average thickness of 2 mm and an average diameter of 76.2 cm were prepared.

The polyurethane sheet and suede (base layer, average thickness: 1 mm) were heat-sealed at 120° C. using a hot melt film (manufacturer: SKC, product name: TF-00) to prepare a polishing pad.

Example 2

It was prepared in the same manner as in Example 1, except that the preheating temperature of the mold was adjusted to 115°C.

Example 3

It was prepared in the same manner as in Example 1, except that the preheating temperature of the mold was adjusted to 130°C.

Comparative Example 1

It was prepared in the same manner as in Example 1 except that the mold was not preheated.

Comparative Example 2

It was prepared in the same manner as in Example 1, except that the preheating temperature of the mold was adjusted to 180°C.

Contents and manufacturing conditions for the Examples and Comparative Examples are shown in Table 1 below.

Example 1 Example 2 Example 3 Comparative Example 1 Comparative Example 2 NCO content of prepolymer (%) 8% 8% 8% 8% 8% Casting mold type Closed Type,
single sheet Closed Type,
single sheet Closed Type,
single sheet Closed Type,
single sheet Closed Type,
single sheet Casting mold preheating temperature (℃) 100℃ 115℃ 130℃ room temperature 180℃ Seat Machining (Casting, Cutting, Grooving) sequential sequential sequential sequential sequential prepolymer weight
(parts by weight) 100 100 100 100 100 Surfactants
(parts by weight) 0.2~1.5 0.2~1.5 0.2~1.5 0.2~1.5 0.2~1.5 solid blowing agent weight
(parts by weight) 1-5 1-5 1-5 1-5 1-5 Inert gas (L/min) 0.1~0.5 0.1~0.5 0.1~0.5 0.1~0.5 0.1~0.5

Experimental Example 1

Evaluation of the physical properties of the abrasive layer

(1) hardness

The Shore D hardness of the polishing pad prepared according to the above Examples and Comparative Examples was measured, and the polishing pad was cut to a size of 2 cm Х 2 cm (thickness: 2 mm) in an environment with a temperature of 25° C. and a humidity of 50±5%. was left for 16 hours. Thereafter, the hardness of the polishing pad was measured using a durometer (D-type durometer).

(2) elastic modulus

For each of the polishing pads manufactured according to the above Examples and Comparative Examples, the highest strength value just before fracture was obtained while testing at a speed of 500 mm/min using a universal testing machine (UTM), and then, through the obtained value, strain-Stress The slope in the region of 20 to 70% of the curve was calculated.

(3) elongation

For each of the polishing pads manufactured according to the above Examples and Comparative Examples, the maximum deformation amount just before fracture was measured while testing at a speed of 500 mm/min using a universal testing machine (UTM), and then the ratio of the maximum deformation amount to the initial length was expressed as a percentage (%).

(4) seal

For each of the polishing pads manufactured according to the above Examples and Comparative Examples, the highest strength value just before fracture was obtained while testing at a speed of 500 mm/min using a universal testing machine (UTM), and then, through the obtained value, strain-Stress The slope in the region of 20 to 70% of the curve was calculated.

(5) specific gravity

The specific gravity of the window prepared according to the above Examples and Comparative Examples was measured, and the polishing pad was cut to a size of 2 cm Х 2 cm (thickness: 2 mm) and left at a temperature of 25° C. and humidity of 50±5% for 16 hours. did After that, the density was calculated after measuring the initial weight and the weight when immersed in water using an electronic densimeter.

Evaluation　Items Example 1 Example 2 Example 3 Comparative Example 1 Comparative Example 2 thickness (mm) 2 2 2 2 2 Hardness (Shore D) 57.8 58.2 57.9 72.3 70.1 Specific gravity (g/cc) 0.78 0.78 0.78 1.08 0.97 Tensile (N/mm2) 22.3 22.2 22 55.39 54.073 Elongation (%) 87.5 81.9 71.0 227.08 227.09 elastic modulus 105.4 133.1 182.7 11.75 13.97

As a result of the physical property evaluation, it can be seen that there is a large difference in hardness, specific gravity, tensile, elongation, and elastic modulus between the abrasive layer of the example of the present invention and the abrasive layer of the comparative example.

That is, the polishing layer of the comparative example is provided as a harder polishing layer than the polishing layer of the embodiment, and thus the polishing rate may be relatively high.

Experimental Example 2

Measuring the pore size of the abrasive layer

The diameter size of pores for the abrasive layers of Examples and Comparative Examples was measured.

Specifically, a cross section of a polished surface of 1 mm ² cut into a 1 mm × 1 mm square (thickness: 2 mm) was observed from an image magnified by 100 times using a scanning electron microscope (SEM). By measuring the diameters of all pores from the images obtained using image analysis software, the number average diameter of pores, the distribution of the sum of the cross-sectional areas for each pore diameter, the number of pores, and the total area of the pores were obtained. The width/length of the SEM 100x image = 959.1 μm/1279 μm.

The measurement results are shown in Table 3 below.

Item Unit Example 1 Example 2 Example 3 Comparative Example 1 Comparative Example 2 Pore
Size D10 μm 15.9 20.8 39.5 9.1 119.5 D50 21.6 46.5 63.6 11.3 261.8 D90 27.2 74.1 76.2 15.2 285.9

0.98 1.07 0.52 1.77 0.17

As shown in Table 3, it can be seen that the size distribution of pores is uniformly distributed in the polishing layer of Examples. On the other hand, in the case of the comparative example, it can be seen that the difference in the size of the pores appears due to the preheating temperature of the mold, in Comparative Example 1, the size of the pores is too small, the size distribution of the pores is not uniform, and in the case of Comparative Example 2, the pores is too large, and the size distribution of the pores is not uniform.

In addition, the size of the pores as described above was additionally confirmed through SEM measurement, and as a result of confirming the size of the pores by magnification of 100 as shown in FIGS. 5 to 9, FIGS. 5 to 7 are the polishing layer of the embodiment, the pores It can be confirmed that this is uniformly distributed, and it can be seen that the size distribution of the comparative examples of FIGS. 8 and 9 is non-uniform.

Experimental Example 3

Measurement of polishing performance of polishing pad

(1) Measurement of polishing rate

After installing a silicon wafer having a diameter of 300 mm on which silicon oxide is deposited by a CVD process using CMP polishing equipment, the silicon oxide layer of the silicon wafer is turned down on the surface to which the polishing pads of Examples and Comparative Examples are bonded. was set. Thereafter, the polishing load was adjusted to be 4.0 psi and the silicon oxide film was polished by rotating the platen at 150 rpm for 60 seconds while injecting the calcined ceria slurry onto the polishing pad at a rate of 250 ml/min while rotating the polishing pad at 150 rpm. .

After polishing, the silicon wafer was removed from the carrier, mounted on a spin dryer, washed with purified water (DIW), and then dried with nitrogen for 15 seconds. The film thickness change was measured before and after polishing the dried silicon wafer using an optical interference type thickness measuring device (manufacturer: Kyence, model name: SI-F80R). Thereafter, the polishing rate was calculated using Equation 1 below.

[Equation 1]

Polishing rate = Silicon wafer polishing thickness (Å) / polishing time (50 seconds)

(2) Measurement of cutting rate of polishing pad (pad cut-rate, ㎛/hr)

The polishing pads including the polishing layers of Examples and Comparative Examples were pre-conditioned with deionized water for an initial 10 minutes, and then conditioned while sprayed with deionized water for 1 hour. At this time, the thickness change was measured while conditioned for 1 hour. The equipment used for conditioning is CTS' AP-300HM, the conditioning pressure is 6 lbf, the rotation speed is 100 to 110 rpm, and the disk used for conditioning is Saesol CI-45.

(3) Defect measurement method

Grinding is carried out in the same manner as in (1) above, and after polishing, the silicon wafer is moved to a cleaner, 1% HF and purified water (DIW), 1% H ₂ NO ₃ , purified water (DIW) was washed for 10 seconds using each. Then, it was moved to a spin dryer, washed with purified water (DIW), and then dried with nitrogen for 15 seconds. Defect change was measured before and after polishing the dried silicon wafer using a defect measuring device (manufacturer: Tenkor, model name: XP+).

Example 1 Example 2 Example 3 Comparative Example 1 Comparative Example 2 Ox RR
(Å/min) 2735 3256 3689 7231 6897 Cutting rate (㎛/hr) 19.2 20.1 19.5 55.3 46.7 Defect 4 2 3 75 68

As a result of the polishing performance measurement, the comparative example showed a higher polishing rate than the example, but when measuring the defect, it was confirmed that not only the number of defects was large, but also the cutting rate of the abrasive layer showed a high value.

Although preferred embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements by those skilled in the art using the basic concept of the present invention as defined in the following claims are also provided. is within the scope of the

10: unexpanded particles
11: Integument of unexpanded particles
12: swelling-inducing component
20: expanded particles
30: curing process
40: pores in the abrasive layer
110: polishing pad
120: surface plate
130: semiconductor substrate
140: nozzle
150: polishing slurry
160: abrasive head
170: conditioner

Claims (9)

comprising an abrasive layer;
The polishing layer includes a plurality of pores,
A value according to the following formula 1 is 0.5 to 1.5
polishing pad:
[Equation 1]

here,
D10 is the diameter of the pores on the 10% volume cumulative distribution,
D50 is the diameter of the pores on the 50% volume cumulative distribution,
D90 is the diameter of the pores on the 90% volume cumulative distribution. According to claim 1,
The pores formed in the polishing layer have a D50 of 20 to 65 μm.
polishing pad. According to claim 1,
The abrasive layer comprises a shell derived from an unexpanded solid foaming agent.
polishing pad. According to claim 1,
The abrasive layer has a target film quality of silicon oxide, a polishing load of 4.0 psi, a polishing pad is rotated at 150 rpm, a calcined ceria slurry is injected at a speed of 250 ml/min, and a surface plate is rotated at 150 rpm for 60 seconds to complete the polishing process. as it proceeds,
The polishing rate of the oxide film according to the polishing process is 2,000 to 4,000 Å/min.
polishing pad. i) preparing a prepolymer composition;
ii) preparing a composition for preparing an abrasive layer comprising the prepolymer composition, a foaming agent and a curing agent; and
iii) curing the composition for preparing an abrasive layer to prepare an abrasive layer;
comprising an abrasive layer;
The polishing layer includes a plurality of pores,
A value according to the following formula 1 is 0.5 to 1.5
Method of making a polishing pad:
[Equation 1]

here,
D10 is the diameter of the pores on the 10% volume cumulative distribution,
D50 is the diameter of the pores on the 50% volume cumulative distribution,
D90 is the diameter of the pores on the 90% volume cumulative distribution. 6. The method of claim 5,
In step iii), the composition for preparing an abrasive layer is injected into a preheated mold to harden,
The preheating temperature of the mold is 50 to 150 ℃
A method of manufacturing a polishing pad. 6. The method of claim 5,
The blowing agent is an unexpanded particle,
It is expanded by the curing process of step iii) to form a plurality of pores with a uniform size.
A method of manufacturing a polishing pad. 6. The method of claim 5,
The abrasive layer comprises a shell derived from an unexpanded solid foaming agent.
A method of manufacturing a polishing pad. 1) providing a polishing pad including a polishing layer; and
2) polishing the semiconductor substrate while relatively rotating so that the polished surface of the semiconductor substrate is in contact with the polishing surface of the polishing layer;
comprising an abrasive layer;
The polishing layer includes a plurality of pores,
A value according to the following formula 1 is 0.5 to 1.5
A method of manufacturing a semiconductor device:
[Equation 1]

here,
D10 is the diameter of the pores on the 10% volume cumulative distribution,
D50 is the diameter of the pores on the 50% volume cumulative distribution,
D90 is the diameter of the pores on the 90% volume cumulative distribution.

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