KR20220027766A - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

Provided is technology capable of improving the throughput of a substrate treatment apparatus. The substrate treatment apparatus includes a connection apparatus, a carrying apparatus and a control apparatus. The connection apparatus connects first and second substrates to manufacture a combined substrate. The connection apparatus includes a first holding part, a second holding part and a moving mechanism. The first holding part holds the first substrate from an upper side. The second holding part holds the second substrate from a lower side. The moving mechanism moves relative positions of the first and second holding parts between a substrate delivery position and a connection position. The control apparatus leads the carrying apparatus to arrive at a substrate carry-in/carry-out position after when the carrying apparatus starts to move from the substrate carry-in/carry-out position for the connection apparatus, and also, at the same time as or before when the relative positions to the first and second holding parts are returned to the substrate delivery position.

Description

Substrate processing apparatus and substrate processing method {SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD}

The present disclosure relates to a substrate processing apparatus and a substrate processing method.

In the bonding system described in Patent Documents 1 to 3, a first substrate and a second substrate are bonded to each other to produce a polymerized substrate. A bonding system is equipped with a surface modification apparatus, a surface hydrophilization apparatus, a bonding apparatus, and a conveyance apparatus. The surface modification apparatus modifies the first substrate and the second substrate. The surface hydrophilization apparatus hydrophilizes the modified first substrate and the second substrate. The bonding apparatus bonds the hydrophilized first substrate and the second substrate to produce a polymerized substrate. The transport device transports the first substrate, the second substrate, and the polymerization substrate.

Japanese Patent Laid-Open No. 2018-010922 Japanese Patent Laid-Open No. 2018-026414 Japanese Patent Laid-Open Publication No. 2018-093018

One aspect of the present disclosure provides a technique for improving the throughput of a substrate processing apparatus.

A substrate processing apparatus according to an aspect of the present disclosure includes a bonding apparatus, a conveying apparatus, and a control apparatus. The bonding apparatus bonds the first substrate and the second substrate to produce a polymerized substrate. The conveying apparatus carries in the first substrate and the second substrate into the bonding apparatus, and carries out the polymerized substrate. The said control apparatus controls the said bonding apparatus and the said conveyance apparatus. The said bonding apparatus contains a 1st holding|maintenance part, a 2nd holding|maintenance part, and a moving mechanism. The first holding unit holds the first substrate from above. The second holding unit holds the second substrate from below. The said moving mechanism moves the relative position of the said 1st holding part and the said 2nd holding part between a board|substrate delivery position and a bonding position. The control device includes: after the transport device starts moving from the substrate loading/unloading position with respect to the bonding device, and the relative position of the first holding part and the second holding part returns to the substrate transport position; Simultaneously or before returning, the conveying device is brought to the substrate loading/unloading position.

According to one aspect of the present disclosure, it is possible to improve the throughput of the substrate processing apparatus.

1 is a plan view illustrating a substrate processing apparatus according to an embodiment.
FIG. 2 is a front view of the substrate processing apparatus of FIG. 1 .
3 is a side view showing an example of a first substrate and a second substrate.
4 is a flowchart illustrating a substrate processing method according to an embodiment.
It is a side view which shows an example of a conveyance apparatus.
6 is a side view showing an example of a position adjusting device.
It is a top view which shows an example of a bonding apparatus.
Fig. 8 is a front cross-sectional view of the bonding device of Fig. 7;
FIG. 9 is a front cross-sectional view showing the first holding part and the second holding part of FIG. 7 .
FIG. 10 is a flowchart showing details of step S109 of FIG. 4 .
Fig. 11(A) is a cross-sectional view showing an example at the start of bonding, Fig. 11(B) is a cross-sectional view showing an example in the middle of bonding, and Fig. 11(C) is at the completion of bonding. It is sectional drawing which shows an example.
It is a top view which shows an example of the anisotropy of advancing speed|rate of joining.
It is sectional drawing which shows an example of a nozzle.
14 is a flowchart showing a first example of timing for transmitting a preparation command to the transport apparatus.
15 is a flowchart showing a second example of timing for transmitting a preparation command to the carrying apparatus.
16 is a flowchart showing a third example of timing at which a preparation command is transmitted to the carrying apparatus.

EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this indication is described with reference to drawings. In addition, in each figure, the same code|symbol is attached|subjected to the same or corresponding structure, and description may be abbreviate|omitted. In addition, the X-axis direction, the Y-axis direction, and the Z-axis direction are directions perpendicular to each other, the X-axis direction and the Y-axis direction are horizontal directions, and the Z-axis direction is a vertical direction.

First, with reference to FIG. 1 and FIG. 2, the substrate processing apparatus 1 which concerns on this embodiment is demonstrated. The substrate processing apparatus 1 bonds the first substrate W1 and the second substrate W2 to form a polymerization substrate T. The first substrate W1 is a substrate in which a plurality of electronic circuits are formed on a semiconductor substrate such as a silicon wafer or a compound semiconductor wafer, for example. The second substrate W2 is, for example, a bare wafer on which no electronic circuit is formed. In addition, similarly to the 1st board|substrate W1, the 2nd board|substrate W2 may be a board|substrate on which the electronic circuit was formed. The first substrate W1 and the second substrate W2 have approximately the same diameter. Although the compound semiconductor wafer is not specifically limited, For example, they are a GaAs wafer, a SiC wafer, a GaN wafer, or an InP wafer.

Hereinafter, the first substrate W1 will be referred to as 'upper wafer W1', the second substrate W2 will be referred to as 'lower wafer (W2)', and the polymerized substrate T will be referred to as 'polymerized wafer (T)'. There are cases. As shown in Fig. 3, among the plate surfaces of the upper wafer W1, the plate surface on the side to be bonded to the lower wafer W2 is described as a 'bonding surface W1j', and the plate surface on the opposite side to the bonding surface W1j is It is described as 'non-bonding surface (W1n)'. In addition, among the plate surfaces of the lower wafer W2, the plate surface on the side bonded to the upper wafer W1 is described as a 'bonded surface (W2j)', and the plate surface on the opposite side to the bonded surface (W2j) is referred to as a 'non-bonded surface ( W2n)'.

As shown in FIG. 1 , the substrate processing apparatus 1 includes a carry-in/out station 2 and a processing station 3 . The carrying-in/out station 2 and the processing station 3 are arranged in order of the carrying-in/out station 2 and the processing station 3 along the X-axis positive direction. In addition, the carrying-in/out station 2 and the processing station 3 are integrally connected.

The carrying-in/out station 2 includes a mounting table 10 and a carrying area 20 . The mounting table 10 includes a plurality of mounting plates 11 . Cassettes C1, C2, and C3 for accommodating a plurality of (for example, 25) substrates in a horizontal state are respectively disposed on each of the placement plates 11 . The cassette C1 is a cassette accommodating the upper wafer W1, the cassette C2 is a cassette accommodating the lower wafer W2, and the cassette C3 is a cassette accommodating the polymerization wafer T. Further, in the cassettes C1 and C2, the upper wafer W1 and the lower wafer W2 are accommodated in the same direction with the bonding surfaces W1j and W2j as the upper surfaces, respectively.

The conveyance area|region 20 is arrange|positioned adjacent to the X-axis positive direction side of the mounting table 10. As shown in FIG. In such a transport region 20 , a transport path 21 extending in the Y-axis direction and a transport device 22 movable along the transport path 21 are provided. The conveying device 22 is movable also in the X-axis direction and is pivotable around the Z-axis, and includes cassettes C1 to C3 disposed on the mounting table 10 and a processing station 3 to be described later. 3 Between the processing block G3, the upper wafer W1, the lower wafer W2, and the superposed|polymerized wafer T are conveyed.

In addition, the number of cassettes C1 to C3 arranged on the mounting table 10 is not limited to the illustrated one. Moreover, on the mounting table 10, in addition to the cassettes C1, C2, and C3, a cassette for recovering a defective substrate or the like may be disposed.

The processing station 3 is provided with, for example, three processing blocks G1 , G2 , G3 . For example, a first processing block G1 is provided on the back side of the processing station 3 (the Y-axis positive side in FIG. 1 ), and the front side of the processing station 3 (the Y-axis negative side in FIG. 1 ). ), a second processing block G2 is provided. In addition, a third processing block G3 is provided on the processing station 3 on the carry-in/out station 2 side (X-axis negative direction side in FIG. 1 ).

Moreover, the conveyance area|region 60 is formed in the area|region surrounded by the 1st process block G1 - the 3rd process block G3. In the conveyance area 60, the conveyance apparatus 61 is arrange|positioned. The conveying apparatus 61 has a conveying arm which is movable about a vertical direction, a horizontal direction, and a vertical axis, for example. In addition, the detail of the conveyance apparatus 61 is mentioned later using FIG.

The conveying apparatus 61 moves within the conveyance area 60 , and is set in the first processing block G1 , the second processing block G2 , and the third processing block G3 adjacent to the conveyance area 60 . The upper wafer W1, the lower wafer W2, and the polymerization wafer T are transferred to the apparatus.

In the first processing block G1 , a surface modification device 33 and a surface hydrophilization device 34 are disposed. The surface modification apparatus 33 modifies the bonding surface W1j of the upper wafer W1 and the bonding surface W2j of the lower wafer W2. The surface hydrophilization device 34 hydrophilizes the bonding surface W1j of the modified upper wafer W1 and the bonding surface W2j of the lower wafer W2.

For example, the surface modification apparatus 33 cut|disconnects the bond _of SiO2 in the bonding surfaces W1j, W2j, forms unbonded water of Si, and enables subsequent hydrophilization. In the surface modifying device 33 , for example, in a reduced pressure atmosphere, oxygen gas, which is a processing gas, is excited to be plasmaized and ionized. Then, oxygen ions are irradiated to the bonding surface W1j of the upper wafer W1 and the bonding surface W2j of the lower wafer W2, whereby the bonding surfaces W1j and W2j are plasma-treated and modified. The processing gas is not limited to oxygen gas, and may be, for example, nitrogen gas or the like.

The surface hydrophilization device 34 hydrophilizes the bonding surface W1j of the upper wafer W1 and the bonding surface W2j of the lower wafer W2 with a hydrophilization treatment liquid such as pure water, for example. The surface hydrophilization device 34 also has a role of cleaning the bonding surfaces W1j and W2j. In the surface hydrophilization device 34, for example, while rotating the upper wafer W1 or the lower wafer W2 held by the spin chuck, pure water is supplied onto the upper wafer W1 or the lower wafer W2. . Thereby, pure water diffuses on the bonding surfaces W1j and W2j, OH groups attach to the Si unbound water, and the bonding surfaces W1j and W2j become hydrophilic.

In the second processing block G2 , a bonding device 41 and a substrate temperature control device 42 are disposed. The bonding device 41 bonds the hydrophilized upper wafer W1 and the lower wafer W2 to produce a superposed wafer T. The substrate temperature controller 42 temperature-controls the upper wafer W1 before bonding and the lower wafer W2 before bonding, respectively. In addition, the detail of the bonding apparatus 41 is mentioned later using FIGS. 7-9.

As shown in FIG. 2 , in the third processing block G3 , the position adjusting device 51 and the transition devices 53 , 54 are stacked in this order from above to below. In addition, the arrangement place of each device in the third processing block G3 is not limited to the arrangement place shown in FIG. 2 . The position adjusting device 51 adjusts the horizontal directions of the upper wafer W1 and the lower wafer W2 . Further, the position adjusting device 51 inverts the upper wafer W1 up and down so that the bonding surface W1j of the upper wafer W1 faces downward. In the transition device 53 , the upper wafer W1 is temporarily disposed. Further, in the transition device 54 , the lower wafer W2 or the superimposed wafer T is temporarily disposed.

The substrate processing apparatus 1 includes a control apparatus 90 . The control device 90 is, for example, a computer, and includes a CPU (Central Processing Unit) 91 and a storage medium 92 such as a memory. The storage medium 92 stores a program for controlling various processes executed in the substrate processing apparatus 1 . The control device 90 controls the operation of the substrate processing apparatus 1 by causing the CPU 91 to execute the program stored in the storage medium 92 .

Next, with reference to FIG. 4, the substrate processing method of this embodiment is demonstrated. Steps S101 to S109 shown in FIG. 4 are performed under control by the control device 90 .

First, a cassette C1 accommodating a plurality of upper wafers W1, a cassette C2 accommodating a plurality of lower wafers W2, and an empty cassette C3 are placed on the mounting table of the carrying-in/out station 2 (10) is placed on top.

Next, the transfer apparatus 22 takes out the upper wafer W1 in the cassette C1 and transfers it to the transition apparatus 53 of the third processing block G3 of the processing station 3 . Thereafter, the transfer apparatus 61 takes out the upper wafer W1 from the transition apparatus 53 , and transfers it to the surface modification apparatus 33 of the first processing block G1 .

Then, the surface modification apparatus 33 reforms the bonding surface W1j of the upper wafer W1 (step S101). Modification of the bonding surface W1j is performed in the state facing the bonding surface W1j upward. Thereafter, the transfer apparatus 61 takes out the upper wafer W1 from the surface modification apparatus 33 , and transfers it to the surface hydrophilization apparatus 34 .

Then, the surface hydrophilization device 34 hydrophilizes the bonding surface W1j of the upper wafer W1 (step S102). Hydrophilization of the bonding surface W1j is performed in the state facing the bonding surface W1j upward. Thereafter, the transfer apparatus 61 takes out the upper wafer W1 from the surface hydrophilization apparatus 34 , and transfers it to the position adjustment apparatus 51 of the third processing block G3 .

Next, the position adjusting device 51 adjusts the horizontal direction of the upper wafer W1, and reverses the upper and lower sides of the upper wafer W1 (step S103). As a result, the notch N (refer to Fig. 12) of the upper wafer W1 is directed in a predetermined orientation, and the bonding surface W1j of the upper wafer W1 is directed downward. Thereafter, the transfer device 61 takes out the upper wafer W1 from the position adjustment device 51 , and transfers it to the substrate temperature controller 42 of the second processing block G2 .

Then, the substrate temperature controller 42 adjusts the temperature of the upper wafer W1 (step S104). The temperature control of the upper wafer W1 is performed in a state in which the bonding surface W1j of the upper wafer W1 faces downward. Thereafter, the transfer apparatus 61 takes out the upper wafer W1 from the substrate temperature control apparatus 42 , and transfers it to the bonding apparatus 41 .

In parallel with the above processing for the upper wafer W1, the following processing for the lower wafer W2 is performed. First, the transfer apparatus 22 takes out the lower wafer W2 in the cassette C2 and transfers it to the transition apparatus 54 of the third processing block G3 of the processing station 3 . Thereafter, the transfer apparatus 61 takes out the lower wafer W2 from the transition apparatus 54 , and transfers it to the surface modification apparatus 33 of the first processing block G1 .

Next, the surface modification apparatus 33 reforms the bonding surface W2j of the lower wafer W2 (step S105). The modification of the bonding surface W2j is performed in the state facing the bonding surface W2j upward. Thereafter, the transfer apparatus 61 takes out the lower wafer W2 from the surface modification apparatus 33 , and transfers it to the surface hydrophilization apparatus 34 .

Next, the surface hydrophilization device 34 hydrophilizes the bonding surface W2j of the lower wafer W2 (step S106). Hydrophilization of the bonding surface W2j is performed in the state facing the bonding surface W2j upward. Thereafter, the transfer apparatus 61 takes out the lower wafer W2 from the surface hydrophilization apparatus 34 , and transfers it to the position adjustment apparatus 51 of the third processing block G3 .

Next, the position adjusting device 51 adjusts the horizontal direction of the lower wafer W2 (step S107). As a result, the notch N of the lower wafer W2 is oriented in a predetermined direction. Thereafter, the transfer device 61 takes out the lower wafer W2 from the positioning device 51 , and transfers it to the substrate temperature controller 42 of the second processing block G2 .

Then, the substrate temperature controller 42 adjusts the temperature of the lower wafer W2 (step S108). The temperature control of the lower wafer W2 is performed in a state in which the bonding surface W2j of the lower wafer W2 faces upward. Thereafter, the transfer apparatus 61 takes out the lower wafer W2 from the substrate temperature controller 42 , and transfers it to the bonding apparatus 41 .

Next, the bonding apparatus 41 bonds the upper wafer W1 and the lower wafer W2 to produce a superposed wafer T (step S109). Thereafter, the transfer apparatus 61 takes out the polymerization wafer T from the bonding apparatus 41 , and transfers it to the transition apparatus 54 of the third processing block G3 .

Finally, the transfer device 22 takes out the polymerization wafer T from the transition device 54 , and transfers it to the cassette C3 on the mounting table 10 . Thereby, a series of processing ends.

Next, with reference to FIG. 5, an example of the conveyance apparatus 61 is demonstrated. The conveyance apparatus 61 is provided with the 1st holding part 62a, the 2nd holding part 62b provided below the 1st holding part 62a, and the 1st drive part 64. As shown in FIG. The first holding portion 62a is disposed opposite to the second holding portion 62b. The second holding unit 62b holds the upper wafer W1 with the bonding surface W1j of the upper wafer W1 facing upward before step S103 . On the other hand, the first holding unit 62a holds the upper wafer W1 with the bonding surface W1j of the upper wafer W1 facing downward after the step S103 and before the step S109 . In addition, the second holding part 62b holds the lower wafer W2 with the bonding surface W2j of the lower wafer W2 facing upward before the step S109.

The first holding part 62a is connected to the vacuum pump 62a2 via the suction pipe 62a1, and vacuum-sucks the upper wafer W1 by the operation of the vacuum pump 62a2. On the other hand, the second holding part 62b is connected to the vacuum pump 62b2 via the suction pipe 62b1, and vacuum-sucks the lower wafer W2 by the operation of the vacuum pump 62b2.

The first driving unit 64 is connected to the first holding unit 62a and the second holding unit 62b. The first driving unit 64 drives the first holding unit 62a and the second holding unit 62b to move integrally with respect to the base 65 in the vertical direction, the horizontal direction, and the circumference of the vertical axis. Moreover, although the illustration is abbreviate|omitted, the 1st drive part 64 contains drive sources, such as a motor, and power transmission mechanisms, such as a belt.

The transfer apparatus 61 holds the upper wafer W1 by the first holding unit 62a when transferring the upper wafer W1 and the lower wafer W2 to the bonding apparatus 41 , The lower wafer W2 is held by the two holding units 62b, and the upper wafer W1 and the lower wafer W2 are transported together.

Moreover, the conveying apparatus 61 is provided with the 3rd holding part 62c, the 4th holding part 62d, and the 2nd drive part 66 further. The fourth holding portion 62d is disposed opposite to the third holding portion 62c. The third holding part 62c holds the superimposed wafer T with the upper wafer W1 facing upward after the step S109. On the other hand, the fourth holding part 62d holds a wafer for testing.

The third holding part 62c is connected to the vacuum pump 62c2 via the suction pipe 62c1, and vacuum-sucks the polymerized wafer T, for example, by the operation of the vacuum pump 62c2. A vacuum pump 62d2 is connected to the fourth holding part 62d via a suction pipe 62d1, and the vacuum pump 62d2 operates to vacuum-suck the test wafer.

The second driving unit 66 is connected to the third holding unit 62c and the fourth holding unit 62d. The second driving unit 66 drives the third holding unit 62c and the fourth holding unit 62d to move integrally with respect to the base 65 in the vertical direction, the horizontal direction, and the circumference of the vertical axis. In addition, although the illustration is abbreviate|omitted, the 2nd drive part 66 contains drive sources, such as a motor, and power transmission mechanisms, such as a belt.

The transfer apparatus 61 carries the upper wafer W1 and the lower wafer W2 into the bonding apparatus 41 by the first holding part 62a and the second holding part 62b, and the third The superposition|polymerization wafer T is carried out with respect to the bonding apparatus 41 by the holding|maintenance part 62c. The unloading of the superimposed wafer T produced by the n (n is a natural number of 1 or more) bonding and the loading of the upper wafer W1 and the lower wafer W2 bonded by the n+1th bonding are successively performed. . In addition, the structure of the conveyance apparatus 61 is not limited to the structure shown in FIG.

Next, with reference to FIG. 6, an example of the position adjustment device 51 is demonstrated. The position adjusting device 51 includes a base 51a, a holding part 51b for adsorbing and holding the upper wafer W1 and the lower wafer W2 and rotating them, and the upper wafer W1 and the lower wafer W2. It has the detection part 51c which detects the position of the notch N, and the base inversion part 51d which inverts the base 51a.

While the holding unit 51b adsorbs and holds the upper wafer W1 and rotates it, the detection unit 51c detects the position of the notch N of the upper wafer W1, so that the position of the notch N is adjusted, The horizontal direction of the wafer W1 is adjusted. The horizontal direction of the lower wafer W2 is also adjusted similarly.

The base inverting unit 51d includes, for example, a motor, to vertically invert the base 51a, and vertically invert the upper wafer W1 held by the holding unit 51b. Thereby, the bonding surface W1j of the upper wafer W1 becomes downward.

Next, an example of the bonding apparatus 41 is demonstrated with reference to FIGS. 7-9. As shown in FIG. 7 , the bonding device 41 includes a processing container 210 that can seal the inside. A carry-in/out port 211 is formed on the side surface of the processing container 210 on the conveyance area 60 side, and an opening/closing shutter 212 is provided at the carrying-in/out port 211 . The upper wafer W1 , the lower wafer W2 , and the superimposed wafer T are carried in and out through the carry-in/out port 211 .

As shown in FIG. 8 , an upper chuck 230 and a lower chuck 231 are provided inside the processing container 210 . The upper chuck 230 holds the upper wafer W1 from above with the bonding surface W1j of the upper wafer W1 facing down. In addition, the lower chuck 231 is provided below the upper chuck 230 , the bonding surface W2j of the lower wafer W2 faces upward, and holds the lower wafer W2 from below.

The upper chuck 230 is supported by a support member 280 provided on the ceiling surface of the processing container 210 . On the other hand, the lower chuck 231 is supported by the first lower chuck moving part 291 provided below the lower chuck 231 .

The first lower chuck moving unit 291 moves the lower chuck 231 in the horizontal direction (Y-axis direction) as will be described later. In addition, the first lower chuck moving unit 291 is configured to be able to move the lower chuck 231 in the vertical direction and to be rotatable about the vertical axis.

The first lower chuck moving unit 291 is provided on the lower surface side of the first lower chuck moving unit 291 and is attached to a pair of rails 295 extending in the horizontal direction (Y-axis direction). The first lower chuck moving part 291 is configured to be movable along the rail 295 . The rail 295 is provided in the second lower chuck moving part 296 .

The second lower chuck moving unit 296 is provided on the lower surface side of the second lower chuck moving unit 296 and is mounted on a pair of rails 297 extending in the horizontal direction (X-axis direction). The second lower chuck moving unit 296 is configured to be movable along the rail 297 , that is, to move the lower chuck 231 in a horizontal direction (X-axis direction). In addition, the pair of rails 297 are provided on the mounting table 298 provided on the bottom surface of the processing container 210 .

The first lower chuck moving unit 291 and the second lower chuck moving unit 296 constitute the moving mechanism 290 . The moving mechanism 290 moves the relative positions of the upper chuck 230 and the lower chuck 231 between the substrate transfer position and the bonding position.

In the substrate transfer position, the upper chuck 230 receives the upper wafer W1 from the transfer apparatus 61 , and the lower chuck 231 receives the lower wafer W2 from the transfer apparatus 61 , and the lower chuck 231 receives the lower wafer W2 from the transfer apparatus 61 , It is a position where the chuck 231 transfers the polymerization wafer T to the transfer device 61 . The substrate transfer position is the unloading of the superimposed wafer T produced by the n (n is a natural number of 1 or more) bonding and the loading of the upper wafer W1 and the lower wafer W2 bonded by the n+1 bonding. This position is continuously performed. The substrate transfer position is, for example, a position shown in FIGS. 7 and 8 .

When transferring the upper wafer W1 to the upper chuck 230 , the transfer device 61 enters directly under the upper chuck 230 . In addition, when the transfer device 61 receives the polymerization wafer T from the lower chuck 231 and transfers the lower wafer W2 to the lower chuck 231 , it enters directly above the lower chuck 231 . . The upper chuck 230 and the lower chuck 231 are set aside so that the conveying device 61 can easily enter, and the vertical distance between the upper chuck 230 and the lower chuck 231 is also large.

On the other hand, the bonding position is a position where the upper wafer W1 and the lower wafer W2 are made to face each other at a predetermined interval and bonded. A bonding position is a position shown in FIG. 9, for example. In the bonding position, compared with the substrate transfer position, the distance between the upper wafer W1 and the lower wafer W2 in the vertical direction is narrow. Further, in the bonding position, unlike the substrate transfer position, the upper wafer W1 and the lower wafer W2 overlap when viewed in the vertical direction.

The moving mechanism 290 moves the relative positions of the upper chuck 230 and the lower chuck 231 in the horizontal direction (both directions in the X-axis direction and the Y-axis direction) and in the vertical direction. In addition, although the moving mechanism 290 moves the lower chuck 231 in this embodiment, either the lower chuck 231 and the upper chuck 230 may move, and it may move both. In addition, the moving mechanism 290 may rotate the upper chuck 230 or the lower chuck 231 around a vertical axis.

As shown in FIG. 9 , the upper chuck 230 is divided into a plurality of (for example, three) regions 230a, 230b, and 230c. These regions 230a , 230b , and 230c are provided in this order from the center to the periphery of the upper chuck 230 . The region 230a has a circular shape in a plan view, and the regions 230b and 230c have an annular shape in a plan view.

In each area 230a, 230b, 230c, suction pipe 240a, 240b, 240c is provided independently, respectively. Different vacuum pumps 241a, 241b, 241c are respectively connected to each suction pipe 240a, 240b, 240c. The upper chuck 230 can vacuum the upper wafer W1 for each of the regions 230a, 230b, and 230c.

The upper chuck 230 is provided with a plurality of retaining pins 245 that are vertically movable. The plurality of holding pins 245 are connected to the vacuum pump 246 and vacuum the upper wafer W1 by operation of the vacuum pump 246 . The upper wafer W1 is vacuum-adsorbed to the lower ends of the plurality of holding pins 245 .

The plurality of holding pins 245 protrude from the holding surface of the upper chuck 230 by descending. In this state, the plurality of holding pins 245 vacuum-suck the upper wafer W1 and receive it from the transfer device 61 . After that, the plurality of holding pins 245 are raised so that the upper wafer W1 comes into contact with the holding surface of the upper chuck 230 . Next, the upper chuck 230 vacuum-sucks the upper wafer W1 horizontally in each of the regions 230a, 230b, and 230c by the operation of the vacuum pumps 241a, 241b, and 241c.

In addition, a through hole 243 penetrating the upper chuck 230 in the vertical direction is formed in the center of the upper chuck 230 . A pressing part 250 to be described later is inserted through the through hole 243 . The pressing part 250 presses the center of the upper wafer W1 disposed at a distance from the lower wafer W2 to contact the lower wafer W2 .

The pushing part 250 has the pushing pin 251 and the outer cylinder 252 which is the raising/lowering guide of the said pushing pin 251. The push pin 251 is inserted through the through hole 243 by a driving unit (not shown) having a built-in motor, for example, and protrudes from the holding surface of the upper chuck 230 , and the upper wafer W1 . Press the center of

The lower chuck 231 is divided into a plurality (eg, two) regions 231a and 231b. These regions 231a and 231b are provided in this order from the center of the lower chuck 231 toward the periphery. In addition, the region 231a has a circular shape in a plan view, and the region 231b has an annular shape in a plan view.

In each region 231a, 231b, suction pipes 260a, 260b are provided independently, respectively. Different vacuum pumps 261a and 261b are respectively connected to the suction pipes 260a and 260b. The lower chuck 231 can vacuum the lower wafer W2 for each of the regions 231a and 231b.

The lower chuck 231 is provided with a plurality of retaining pins 265 that are vertically movable. The lower wafer W2 is disposed on top of the plurality of holding pins 265 . In addition, the lower wafer W2 may be vacuum-adsorbed to the upper end of the some holding pin 265 .

The plurality of holding pins 265 protrude from the holding surface of the lower chuck 231 by rising. In this state, the plurality of holding pins 265 receive the lower wafer W2 from the transfer device 61 . After that, the plurality of holding pins 265 are lowered so that the lower wafer W2 comes into contact with the holding surface of the lower chuck 231 . Next, the upper chuck 230 vacuum-sucks the lower wafer W2 horizontally in each of the regions 231a and 231b by the operation of the vacuum pumps 261a and 261b.

Next, with reference mainly to FIGS. 10 and 11, the detail of step S109 of FIG. 4 is demonstrated. First, the transfer apparatus 61 carries in the upper wafer W1 and the lower wafer W2 into the bonding apparatus 41 at the substrate carrying-in/out position indicated by the dashed-dotted line in FIG. 7 (step S111)) . The substrate carry-in/out position is a position outside the processing container 210 and is adjacent to the loading/unloading port 211 of the processing container 210 . In step S111 , the relative positions of the upper chuck 230 and the lower chuck 231 are the substrate transfer positions shown in FIGS. 7 and 8 .

Specifically, first, the transfer device 61 carries the upper wafer W1 directly under the upper chuck 230 . Next, the plurality of holding pins 245 descend to receive the upper wafer W1 from the transfer device 61 . After that, the plurality of holding pins 245 are raised so that the upper wafer W1 comes into contact with the holding surface of the upper chuck 230 . Next, the upper chuck 230 holds the upper wafer W1 from above.

Next, the transfer device 61 carries the lower wafer W2 directly above the lower chuck 231 . Next, the plurality of holding pins 265 are raised to receive the lower wafer W2 from the transfer device 61 . After that, the plurality of holding pins 265 are lowered so that the lower wafer W2 comes into contact with the holding surface of the lower chuck 231 . Next, the lower chuck 231 holds the lower wafer W2 from below.

Next, the moving mechanism 290 moves the relative positions of the upper chuck 230 and the lower chuck 231 from the substrate transfer position shown in Figs. 7 and 8 to the bonding position shown in Fig. 9 (step S112). )). As a result, the upper wafer W1 and the lower wafer W2 are disposed to face each other with a predetermined interval therebetween. The space|interval is 80 micrometers - 200 micrometers, for example. Further, when viewed from the vertical direction, the alignment mark of the upper wafer W1 and the alignment mark of the lower wafer W2 overlap.

Next, the operation of the vacuum pump 241a is stopped, and as shown in FIG. 11A , the vacuum suction of the upper wafer W1 in the region 230a is canceled. Thereafter, the pressing pin 251 of the pressing unit 250 descends, pressing the center of the upper wafer W1 to contact the lower wafer W2 (step S113). As a result, the centers of the upper wafer W1 and the lower wafer W2 are joined.

Since the bonding surface W1j of the upper wafer W1 and the bonding surface W2j of the lower wafer W2 are each modified, first, a van der Waals force (intermolecular force) is generated between the bonding surfaces W1j and W2j. Thus, the bonding surfaces W1j and W2j are joined to each other. In addition, since the bonding surface W1j of the upper wafer W1 and the bonding surface W2j of the lower wafer W2 are each hydrophilized, hydrophilic groups (for example, OH groups) are hydrogen-bonded, and the bonding surface W1j, W2j) are strongly bonded to each other.

Next, the operation of the vacuum pump 241b is stopped, and as shown in FIG. 11B , the vacuum suction of the upper wafer W1 in the region 230b is canceled. Next, the operation of the vacuum pump 241c is stopped, and as shown in FIG. 11C , the vacuum suction of the upper wafer W1 in the region 230c is canceled.

In this way, from the center to the periphery of the upper wafer W1 , the vacuum suction of the upper wafer W1 is released step by step, and the upper wafer W1 drops stepwise to the lower wafer W2 and comes into contact with it. Then, bonding of the upper wafer W1 and the lower wafer W2 proceeds sequentially from the center toward the periphery (step S114). As a result, the bonding surface W1j of the upper wafer W1 and the bonding surface W2j of the lower wafer W2 contact from the front side, the upper wafer W1 and the lower wafer W2 are bonded, and the polymerization wafer ( T) is obtained. Thereafter, the push pin 251 is raised to its original position.

Next, the moving mechanism 290 moves the relative positions of the upper chuck 230 and the lower chuck 231 from the bonding position shown in Fig. 9 to the substrate transfer position shown in Figs. 7 and 8 (step S115). )). For example, the moving mechanism 290 lowers the lower chuck 231 first to widen the distance between the lower chuck 231 and the upper chuck 230 in the vertical direction. Next, the moving mechanism 290 moves the lower chuck 231 laterally to set the lower chuck 231 and the upper chuck 230 aside.

Next, the transfer apparatus 61 carries out the polymerization wafer T to the bonding apparatus 41 at the substrate carrying-in/out position shown by the dashed-dotted line in FIG. 7 (step S116). Specifically, first, the lower chuck 231 releases the holding of the polymerization wafer T. Next, the plurality of holding pins 265 are raised to transfer the superimposed wafer T to the transfer device 61 . Thereafter, the plurality of holding pins 265 descend to their original positions.

In addition, the transfer device 61 transports the superimposed wafer T produced by bonding at the n (n is a natural number equal to or greater than 1) times, and the upper wafer W1 and the lower wafer W2 to be joined by bonding at the n+1 time. ) is carried in continuously.

Next, an example of the displacement detection unit 220 will be described with reference to FIGS. 12 and 13 . The displacement detecting unit 220 detects a downward displacement of the upper wafer W1 with respect to the upper chuck 230 at a point away from the center of the upper wafer W1 . The displacement detection unit 220 may detect the separation of the upper wafer W1 from the upper chuck 230 , or may detect a contact between the upper wafer W1 and the lower wafer. In addition, there is a time lag from the time the upper wafer W1 detaches from the upper chuck 230 until it comes into contact with the lower wafer W2 . When the upper wafer W1 contacts the lower wafer W2, the distance between the upper wafer W1 and the lower wafer W2 becomes a predetermined distance.

The displacement detection unit 220 measures a distance between the upper chuck 230 and the upper wafer W1 . For example, as shown in FIG. 13 , the displacement detection unit 220 includes a nozzle 221 that sucks in or discharges gas. The tip of the nozzle 221 is disposed above the holding surface of the upper chuck 230 and spaced apart from the upper wafer W1 .

The displacement detection unit 220 measures the distance between the upper chuck 230 and the upper wafer W1 by detecting the flow rate of the gas of the nozzle 221 . Whether the nozzle 221 sucks the gas or the nozzle 221 discharges the gas, as the distance between the upper chuck 230 and the upper wafer W1 is narrower, the flow resistance of the gas increases. the flow rate is reduced. The relationship between the gas flow rate and the distance is obtained in advance by an experiment, and data stored in the storage medium 92 is read and used.

In addition, the displacement detection unit 220 may measure the distance between the upper chuck 230 and the upper wafer W1 using ultrasonic waves, light, or an image. For example, the displacement detecting unit 220 irradiates ultrasonic waves or light to the upper wafer W1 , receives the reflected wave or reflected light, and measures the distance between the upper chuck 230 and the upper wafer W1 . The measurement method is, for example, a confocal method, a spectral interference method, or a triangulation method. The light source is an LED or a laser or the like.

The displacement detection unit 220 may image the upper chuck 230 and the upper wafer W1 from the side, image the image, and measure the distance between the upper chuck 230 and the upper wafer W1 .

The displacement detection unit 220 may receive the reflected light from the upper wafer W1 , and measure the distance between the upper chuck 230 and the upper wafer W1 based on the received light amount. The upper wafer W1 is slanted from the time it detaches from the upper chuck 230 until it comes into contact with the lower wafer W2 . At this time, the amount of light received of the reflected light temporarily decreases. The relationship between the amount of light received and the distance of the reflected light is obtained in advance by an experiment, and data stored in the storage medium 92 is read and used.

The displacement detection unit 220 may measure the distance between the upper chuck 230 and the upper wafer W1 by measuring the capacitance between the displacement detection unit 220 and the upper wafer W1 . As the distance between the upper chuck 230 and the upper wafer W1 decreases, the gap between the displacement detection unit 220 and the upper wafer W1 becomes narrower, and thus the capacitance increases. The relationship between the capacitance and the distance is obtained in advance by an experiment, and the data stored in the storage medium 92 is read and used.

In addition, the displacement detecting unit 220 measures the distance between the upper chuck 230 and the upper wafer W1 , and may simply detect the separation of the upper wafer W1 from the upper chuck 230 . However, there is a time lag from the time the upper wafer W1 detaches from the upper chuck 230 until it comes into contact with the lower wafer W2 . In the case of measuring the distance, the timing of contact between the upper wafer W1 and the lower wafer W2 can be accurately detected as compared to the case of detecting deviation.

The advancing speed of bonding of the upper wafer W1 and the lower wafer W2 may have anisotropy as shown in FIG. In FIG. 12, the area|region A shown by hatching is an area|region which has been joined at a certain timing. 12, (100) is a plane index, and [0-11], [001], [011], and [010] are direction indices. A negative Miller exponent is usually expressed by adding a '-' (bar) above the number, but in the present specification, it is expressed by adding a negative sign in front of the number. The Miller index shown in Fig. 12 is that of a single crystal silicon wafer.

The advancing speed of bonding of the upper wafer W1 and the lower wafer W2 changes with a 90 degree cycle. This is because the Young's modulus, Poisson's ratio, and shear modulus of the single crystal silicon wafer change at a 90° cycle.

As shown in FIG. 12, the displacement detection part 220 is provided in both the direction with the fastest advancing speed of bonding, and the direction with the slowest advancing speed of bonding. Thereby, the anisotropy of the advancing speed|rate of bonding can be detected.

The displacement detection unit 220 detects the downward displacement of the upper wafer W1 at a plurality of points provided in the direction in which the bonding speed is fastest and the distance from the center of the upper wafer W1 is different. Thereby, the fastest progress speed can be detected.

In addition, the displacement detection unit 220 detects the downward displacement of the upper wafer W1 at a plurality of points provided in the direction in which the bonding progress speed is slowest and the distance from the center of the upper wafer W1 is different. . Thereby, the slowest advancing speed in the same direction can be detected.

The displacement detection unit 220 transmits a signal indicating the detection result to the control device 90 . The control device 90 monitors that the bonding of the upper wafer W1 and the lower wafer W2 advances from the center toward the periphery using the detection result of the displacement detection unit 220 . For example, the control device 90 uses the plurality of displacement detection units 220 to determine the advancing speed of bonding the upper wafer W1 and the lower wafer W2, or the upper wafer W1 and the lower wafer ( It is judged whether or not the splicing of W2) is successful.

Next, with reference to FIG. 14, the 1st example of the timing which transmits a preparation instruction|command with respect to the conveyance apparatus 61 is demonstrated. Steps S201 to S208 shown in FIG. 14 are performed under control by the control device 90 .

First, the pressing part 250 starts pressing the center of the upper wafer W1 (step S201). Specifically, the pressing pin 251 of the pressing unit 250 is started to descend. Thereafter, the control device 90 measures the elapsed time from step S201 with a timer.

Next, the control device 90 checks whether or not a set time has elapsed from step S201 (step S202). When the set time has not elapsed (step S202, NO), the control device 90 executes the step S202 again after the lapse of the unit time.

On the other hand, when the set time has elapsed (step S202, YES), since bonding between the upper wafer W1 and the lower wafer W2 has sufficiently progressed, the upper chuck 230 is attached to the periphery of the upper wafer W1. release the maintenance (step S203). As a result, the periphery of the upper wafer W1 falls into contact with the periphery of the lower wafer W2, and advancing of bonding is completed, and the superposition|polymerization wafer T is obtained.

Then, the movement mechanism 290 starts movement of the lower chuck 231 (step S204). The lower chuck 231 starts moving from the bonding position toward the substrate transfer position. First, the lower chuck 231 is lowered and then set aside.

Then, the moving mechanism 290 completes the movement of the lower chuck 231 (step S205). The lower chuck 231 stops at the substrate transfer position. Thereafter, the unloading of the superposed wafer T produced by the n-th bonding and the loading of the upper wafer W1 and the lower wafer W2 bonded by the n+1-th bonding are successively performed. This series of operations is hereinafter also referred to as "loading of the upper wafer W1, etc.".

The control device 90 completes the movement of the lower chuck 231 in order to shorten the waiting time from the completion of the movement of the lower chuck 231 (step S205) to the start of the loading of the upper wafer W1, etc. Before that, a preparation command is transmitted to the conveying apparatus 61 . Hereinafter, the timing of transmitting a preparation command to the conveyance apparatus 61 is demonstrated.

First, the control device 90 checks whether or not a set time has elapsed from the start of the pressing by the pressing unit 250 (step S201) (step S206). When the set time has not elapsed (step S206, NO), the control device 90 executes the step S206 again after the lapse of the unit time.

On the other hand, when the set time has elapsed (step S206, YES), the control device 90 transmits a preparation command to the conveying device 61 (step S207). Upon receiving the preparation command, the transfer device 61 takes out the upper wafer W1 and the lower wafer W2 from the substrate temperature control device 42, and starts moving toward the substrate carry-in/out position indicated by the dashed-dotted line in FIG. 7 . do.

In addition, the board|substrate temperature control apparatus 42 may not be needed. In this case, when the transfer device 61 receives the preparation command, the upper wafer W1 and the lower wafer W2 are taken out from the positioning device 51, and the substrate carrying-in/out position shown by the dashed-dotted line in FIG. 7 is determined. start moving towards

Next, the conveyance apparatus 61 completes the movement to the board|substrate carrying-in/out position (step S208). If the timing of the completion of movement of the conveying apparatus 61 (step S208) is the same as or before the timing of completion of the movement of the lower chuck 231 (step S205), the waiting time becomes zero, and the bonding apparatus ( 41), the utilization rate is improved.

As described above, the control device 90 transmits a preparation command to the transport device 61 by triggering the pressing of the upper wafer W1 by the pressing unit 250 (step S201), and the transport device (61) is started to move toward the board|substrate carrying-in/out position. Compared to the case where the transfer device 61 is started to move toward the substrate loading/unloading position after the movement of the lower chuck 231 is completed (step S205)), from the completion of the movement of the lower chuck 231, the upper wafer W1 is The waiting time until the start of carrying in etc. can be shortened, and the throughput of the substrate processing apparatus 1 can be improved.

The control device 90 controls the transfer device 61 simultaneously with or before the completion of the movement of the lower chuck 231 (step S205), that is, simultaneously with or before the lower chuck 231 returns to the substrate transfer position. The board arrives at the loading/unloading position. The waiting time from the completion of movement of the lower chuck 231 to the start of loading of the upper wafer W1, etc. can be made zero, and the throughput of the substrate processing apparatus 1 can be improved more.

The control device 90 transmits a preparation command to the transport device 61 after a set time has elapsed from the start of the pressing of the upper wafer W1 by the pressing unit 250 (step S201), and the transport device ( 61) is started to move toward the substrate carry-in/out position. By appropriately delaying the transmission of the preparation command, it is possible to shorten the waiting time from the completion of the movement of the transfer device 61 (step S208) to the start of the loading of the upper wafer W1 or the like. Therefore, the operation rate of the conveying apparatus 61 can be improved. In addition, temperature changes of the upper wafer W1 and the lower wafer W2 can be suppressed.

Next, with reference to FIG. 15, the 2nd example of the timing which transmits a preparation instruction|command with respect to the conveyance apparatus 61 is demonstrated. Steps S301 to S309 shown in FIG. 15 are performed under control by the control device 90 .

First, the pressing part 250 starts pressing the center of the upper wafer W1 (step S301). Specifically, the pressing pin 251 of the pressing unit 250 is started to descend.

Next, the displacement detecting unit 220 detects a downward displacement of the upper wafer W1 with respect to the upper chuck 230 at a point away from the center of the upper wafer W1 (step S302 ). The displacement detection unit 220 may detect separation of the upper wafer W1 with respect to the upper chuck 230 , or may detect a contact between the upper wafer W1 and the lower wafer W2 .

Thereafter, the control device 90 measures the elapsed time from step S302 with a timer. Although the number and combination of the displacement detection units 220 used here are not particularly limited, they are set in advance and stored in the storage medium 92 . When all the preset displacement detection units 220 detect displacement, measurement by a timer is started.

Next, the control device 90 checks whether or not a set time has elapsed from step S302 (step S303). When the set time has not elapsed (step S303, NO), the control device 90 executes the step S303 again after the lapse of the unit time.

On the other hand, when the set time has elapsed (step S303 , YES), since bonding between the upper wafer W1 and the lower wafer W2 has sufficiently progressed, the upper chuck 230 is attached to the periphery of the upper wafer W1. Release the maintenance of (step S3 04). As a result, the periphery of the upper wafer W1 falls into contact with the periphery of the lower wafer W2, and advancing of bonding is completed, and the superposed|polymerized wafer T is obtained.

Then, the movement mechanism 290 starts movement of the lower chuck 231 (step S305). The lower chuck 231 starts moving from the bonding position toward the substrate transfer position. The lower chuck 231 is lowered and then set aside.

Then, the moving mechanism 290 completes the movement of the lower chuck 231 (step S306). The lower chuck 231 stops at the substrate transfer position. Thereafter, the unloading of the superposed wafer T produced by the n-th bonding and the loading of the upper wafer W1 and the lower wafer W2 bonded by the n+1-th bonding are successively performed. This series of operations is hereinafter also referred to as "loading of the upper wafer W1, etc.".

The control device 90 completes the movement of the lower chuck 231 in order to shorten the waiting time from the completion of the movement of the lower chuck 231 (step S306) to the start of the loading of the upper wafer W1, etc. Before that, a preparation command is transmitted to the conveying apparatus 61 . Hereinafter, the timing of transmitting a preparation command to the conveyance apparatus 61 is demonstrated.

First, the control device 90 checks whether a set time has elapsed from the displacement detection by the displacement detection unit 220 (step S302) (step S307). When the set time has not elapsed (step S307, NO), the control device 90 executes the step S307 again after the lapse of the unit time.

On the other hand, when the set time has elapsed (step S307, YES), the control apparatus 90 transmits a preparation command to the conveyance apparatus 61 (step S308). Upon receiving the preparation command, the transfer device 61 takes out the upper wafer W1 and the lower wafer W2 from the substrate temperature control device 42, and starts moving toward the substrate carry-in/out position indicated by the dashed-dotted line in FIG. 7 . do.

In addition, the board|substrate temperature control apparatus 42 may not be needed. In this case, when the transfer device 61 receives the preparation command, the upper wafer W1 and the lower wafer W2 are taken out from the positioning device 51, and the substrate carrying-in/out position shown by the dashed-dotted line in FIG. 7 is determined. start moving towards

Next, the conveyance apparatus 61 completes the movement to the board|substrate carrying-in/out position (step S309). If the timing of the completion of the movement of the conveying device 61 (step S309) is the same as or before the timing of the completion of the movement of the lower chuck 231 (step S306), the waiting time becomes zero, and the bonding apparatus ( 41), the utilization rate is improved.

As described above, the control device 90 transmits a preparation command to the transport device 61 by triggering the displacement detection unit 220 to detect the displacement (step S302), and control the transport device 61 . A movement is started toward the board|substrate carrying-in/out position. Compared to the case where the transfer device 61 is started to move toward the substrate loading/unloading position after the lower chuck 231 has been moved (step S306), the lower chuck 231 starts moving after the upper wafer W1 is moved. The waiting time until the start of carrying in etc. can be shortened, and the throughput of the substrate processing apparatus 1 can be improved.

The control device 90 controls the transfer device 61 simultaneously with or before the completion of the movement of the lower chuck 231 (step S306), that is, simultaneously with or before the lower chuck 231 returns to the substrate transfer position. The board arrives at the loading/unloading position. The waiting time from the completion of movement of the lower chuck 231 to the start of loading of the upper wafer W1, etc. can be made zero, and the throughput of the substrate processing apparatus 1 can be improved more.

The control device 90 transmits a preparation command to the transport device 61 after a set time has elapsed from detection of the displacement by the displacement detection unit 220 (step S302), and carries the transport device 61 in and out of the substrate. Start moving towards the position. By appropriately delaying the transmission of the preparation command, it is possible to shorten the waiting time from the completion of the movement of the transfer device 61 (step S309 ) to the start of the loading of the upper wafer W1 , etc. . Therefore, the operation rate of the conveying apparatus 61 can be improved. In addition, temperature changes of the upper wafer W1 and the lower wafer W2 can be suppressed.

If the displacement detection unit 220 is used, the progress of bonding between the upper wafer W1 and the lower wafer W2 can be monitored. When the advancing of bonding cannot be monitored, from the start of pressing the upper wafer W1 by the pressing part 250 ( S201 in FIG. 14 ), the holding of the periphery of the upper wafer W1 by the upper chuck 230 is released. The waiting time up to (S203 in Fig. 14) is set to be long in consideration of safety. If the progress of bonding is monitored using the displacement detection unit 220 , a useless waiting time can be shortened.

Next, with reference to FIG. 16, the 3rd example of the timing which transmits a preparation instruction|command with respect to the conveyance apparatus 61 is demonstrated. Steps S401 to S408 shown in FIG. 16 are implemented under control by the control device 90 .

First, the pressing part 250 starts pressing the center of the upper wafer W1 (step S401). Specifically, the pressing pin 251 of the pressing unit 250 is started to descend. Thereafter, the control device 90 measures the elapsed time from step S401 with a timer.

Next, the control device 90 checks whether a set time has elapsed from step S401 (step S402). When the set time has not elapsed (step S402, NO), the control device 90 executes the step S402 again after the lapse of the unit time.

On the other hand, when the set time has elapsed (step S402, YES), since bonding between the upper wafer W1 and the lower wafer W2 has sufficiently progressed, the upper chuck 230 is attached to the periphery of the upper wafer W1. release of the maintenance (step S403). As a result, the periphery of the upper wafer W1 falls into contact with the periphery of the lower wafer W2, and advancing of bonding is completed, and the superposition|polymerization wafer T is obtained.

Next, the movement mechanism 290 starts movement of the lower chuck 231 (step S404). The lower chuck 231 starts moving from the bonding position toward the substrate transfer position. The lower chuck 231 is lowered and then set aside.

Then, the moving mechanism 290 completes the movement of the lower chuck 231 (step S405). The lower chuck 231 stops at the substrate transfer position. Thereafter, the unloading of the superposed wafer T produced by the n-th bonding and the loading of the upper wafer W1 and the lower wafer W2 bonded by the n+1-th bonding are successively performed. This series of operations is hereinafter also referred to as "loading of the upper wafer W1, etc.".

The control device 90 completes the movement of the lower chuck 231 in order to shorten the waiting time from the completion of the movement of the lower chuck 231 (step S405 ) to the start of the loading of the upper wafer W1 , etc. Before that, a preparation command is transmitted to the conveying apparatus 61 . Hereinafter, the timing of transmitting a preparation command to the conveyance apparatus 61 is demonstrated.

First, the control device 90 checks whether a set time has elapsed from the start of movement of the lower chuck 231 (step S404) (step S406). When the set time has not elapsed (step S406, NO), the control device 90 executes the step S406 again after the lapse of the unit time.

On the other hand, when the set time has elapsed (step S406, YES), the control device 90 transmits a preparation command to the conveying device 61 (step S4)07. Upon receiving the preparation command, the transfer device 61 takes out the upper wafer W1 and the lower wafer W2 from the substrate temperature control device 42, and starts moving toward the substrate carry-in/out position indicated by the dashed-dotted line in FIG. 7 . do.

In addition, the board|substrate temperature control apparatus 42 may not be needed. In this case, when the transfer device 61 receives the preparation command, the upper wafer W1 and the lower wafer W2 are taken out from the positioning device 51, and the substrate carrying-in/out position shown by the dashed-dotted line in FIG. 7 is determined. start moving towards

Next, the conveyance apparatus 61 completes the movement to the board|substrate carrying-in/out position (step S408). If the timing of the completion of the movement of the conveying device 61 (step S408) is the same as or before the timing of the completion of the movement of the lower chuck 231 (step S405), the waiting time becomes zero, and the bonding apparatus ( 41), the utilization rate is improved.

As mentioned above, the control apparatus 90 transmits a preparation command to the conveyance apparatus 61 with the movement start of the lower chuck 231 (step S404) as a trigger, and the conveyance apparatus 61 carries in a board|substrate. The movement is started toward the unloading position. Compared to the case where the transfer device 61 is started to move toward the substrate loading/unloading position after the lower chuck 231 has been moved (step S405)), from the completion of the movement of the lower chuck 231, the upper wafer W1 The waiting time until the start of carrying in etc. can be shortened, and the throughput of the substrate processing apparatus 1 can be improved.

The control device 90 controls the transfer device 61 at the same time or before the completion of the movement of the lower chuck 231 (step S405), that is, at the same time or before the lower chuck 231 returns to the substrate transfer position. The board arrives at the loading/unloading position. The waiting time from the completion of movement of the lower chuck 231 to the start of loading of the upper wafer W1, etc. can be made zero, and the throughput of the substrate processing apparatus 1 can be improved more.

The control apparatus 90 transmits a preparation command to the transfer apparatus 61 after a set time has elapsed from the start of movement of the lower chuck 231 (step S404), and the transfer apparatus 61 sets the board|substrate carrying-in/out position. start moving towards By appropriately delaying the transmission of the preparation command, it is possible to shorten the waiting time from the completion of the movement of the transfer device 61 (step S408 ) to the start of the loading of the upper wafer W1 , and the like. Therefore, the operation rate of the conveying apparatus 61 can be improved. In addition, temperature changes of the upper wafer W1 and the lower wafer W2 can be suppressed.

In addition, the control device 90 includes the initiation of pressing of the upper wafer W1 by the pressing unit 250 (step S201), the detection of the displacement by the displacement detecting unit 220 (step S302), and the lower What is necessary is just to transmit a preparation instruction|command to the conveyance apparatus 61 using at least one of the movement start (step S404) of the chuck|zipper 231 as a trigger. The control device may transmit a preparation command to the conveying device 61 by triggering two or more selected from steps S201, S302, and S404. Although the number and type of triggers are not particularly limited, they are set in advance and stored in the storage medium 92 .

It is preferable that the control apparatus 90 transmits a preparation instruction|command to the conveyance apparatus 61 as a trigger at least detection of displacement by the displacement detection part 220 (step S302). The displacement detection unit 220 can monitor the progress of bonding of the upper wafer W1 and the lower wafer W2 . A preparation command can be transmitted to the conveyance apparatus 61 at the timing according to the progress of bonding.

When the control device 90 does not detect the displacement by the preset displacement detecting unit 220 within a set time from the start of the pressing of the upper wafer W1 by the pressing unit 250 (step S201), the control device 90, It is judged that there is a problem in the progress of splicing, and transmission of the preparation command is prohibited. Thereafter, the control device 90 may notify the user of the substrate processing apparatus 1 of an alarm.

In addition, when the control device 90 does not detect displacements in both the displacement detecting unit 220 in the direction having the fastest moving speed and the displacement detecting unit 220 in the direction having the slowest moving speed, there is a problem in advancing the bonding. is determined to have occurred, and transmission of the preparation command is prohibited. Thereafter, the control device 90 may notify the user of the substrate processing apparatus 1 of an alarm.

In addition, if the control apparatus 90 confirms that the movement of the conveyance apparatus 61 does not interfere with another sensor etc., it may restart transmission of a preparation instruction|command.

As mentioned above, although embodiment etc. of the substrate processing apparatus and substrate processing method which concern on this indication were described, this indication is not limited to the said embodiment etc. Various changes, modifications, substitutions, additions, deletions, and combinations are possible within the scope of the claims. Naturally, they also fall within the technical scope of the present disclosure.

Claims (15)

a bonding apparatus for bonding the first substrate and the second substrate to produce a polymerized substrate;
a transport device for loading the first substrate and the second substrate into the bonding device and unloading the polymerized substrate;
a control device for controlling the bonding device and the conveying device;
The bonding apparatus includes a first holding part for holding the first substrate from above, a second holding part for holding the second substrate from below, and a relative position between the first holding part and the second holding part. a moving mechanism for moving between the substrate transfer position and the bonding position;
The control device includes: after the transport device starts moving from the substrate loading/unloading position with respect to the bonding device, the relative position of the first holding part and the second holding part returns to the substrate transport position; The substrate processing apparatus which makes the said conveyance apparatus arrive at the said board|substrate carrying-in/out position simultaneously or before returning. The method of claim 1,
The bonding apparatus includes: a pressing part that presses the center of the first substrate disposed at a distance from the second substrate to contact the second substrate; and the first holding part at a point away from the center of the first substrate. a displacement detection unit for detecting a downward displacement of the first substrate;
The said control apparatus is at least among pressing of the said 1st board|substrate by the said pushing part, detection of the said displacement by the said displacement detection part, and the start of movement from the said bonding position to the said board|substrate delivery position of the said relative position by the said moving mechanism. The substrate processing apparatus which starts moving the said conveyance apparatus toward the said board|substrate carrying-in/out position using one as a trigger. 3. The method of claim 2,
The displacement detection unit is provided in plurality, and detects the displacement at a plurality of points having different distances from the center of the first substrate,
wherein the control device determines, by a plurality of the displacement detection units, a progress rate of bonding of the first substrate and the second substrate, or determines whether bonding of the first substrate and the second substrate is successful. Device. 4. The method of claim 2 or 3,
The advancing speed of the bonding of the first substrate and the second substrate has anisotropy,
The displacement detection unit is provided in both of the direction in which the moving speed is the fastest and the moving speed is the slowest direction, the substrate processing apparatus. 3. The method of claim 1 or 2,
The said control apparatus causes the said conveyance apparatus to start moving toward the said board|substrate carrying-in/out position after a set time elapses from the start of the press of the said 1st board|substrate by the said press part. 3. The method of claim 1 or 2,
The said control apparatus causes the said conveyance apparatus to start moving toward the said board|substrate carrying-in/out position after a set time elapses from detection of the said displacement by the said displacement detection part at one or more points|pieces. 3. The method of claim 1 or 2,
The said control apparatus causes the said conveyance apparatus to start moving toward the said board|substrate carrying-in/out position after set time elapses from the start of movement from the said bonding position of the said relative position by the said movement mechanism to the said board|substrate delivery position. . 4. The method of claim 2 or 3,
and the displacement detecting unit measures a distance between the first holding unit and the first substrate. 9. The method of claim 8,
The first holding part includes a nozzle for sucking or discharging gas,
The displacement detecting unit detects a flow rate of the gas of the nozzle to measure a distance between the first holding unit and the first substrate. 9. The method of claim 8,
The displacement detecting unit measures a distance between the first holding unit and the first substrate by ultrasonic waves, light, or an image. 9. The method of claim 8,
The displacement detection unit,
receiving the reflected light from the first substrate, and measuring the distance between the first holding unit and the first substrate by the amount of light received;
or a distance between the first holding unit and the first substrate is measured by measuring the capacitance between the displacement detecting unit and the first substrate. 4. The method of claim 2 or 3,
and the displacement detecting unit detects separation of the first substrate with respect to the first holding unit. 3. The method of claim 2,
The said control apparatus commands the said conveyance apparatus to move toward the said board|substrate carrying-in/out position, when the said displacement detection part does not detect the said displacement within a set time from the start of pressing of the said 1st board|substrate by the said push part. A substrate processing apparatus that prohibits the transmission of 5. The method of claim 4,
The control device is configured to, when not detecting the displacement in both the displacement detecting unit in the direction having the fastest traveling speed and the displacement detecting unit in the direction having the slowest traveling speed, move the conveying device toward the substrate loading/unloading position. A substrate processing apparatus that prohibits transmission of a command to move. A substrate processing method for bonding the first substrate and the second substrate using the substrate processing apparatus according to any one of claims 1 to 3, comprising:
After the transfer device starts moving from the substrate carrying-in/out position, and at the same time or before returning to the substrate transfer position, the relative positions of the first holding part and the second holding part return to the substrate transfer position. and making it arrive at the substrate loading/unloading position.

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