KR20220015630A - Gas distributing apparatus, gas distributing method, plasma reaction apparatus and substrate processing system - Google Patents

Abstract

The present invention relates to a gas distribution device and a gas distribution method and a plasma reaction device and a substrate processing system that controls a flow of gas to improve a plasma generation efficiency. The plasma reaction device may comprise: a reaction main body wherein a gas inlet part is formed on one side, a gas outlet part is formed on the other side, and an annular loop space is formed therein; and a gas distribution device that double-distributes the gas introduced through the gas inlet part to the annular loop space.

Description

Gas distribution apparatus, gas distribution method, plasma reaction apparatus, and substrate processing system TECHNICAL FIELD

The present invention relates to a gas distribution apparatus, a gas distribution method, a plasma reaction apparatus, and a substrate processing system, and more particularly, to a gas distribution apparatus and a gas distribution method for improving plasma generation efficiency by actively controlling a gas flow and a plasma reaction apparatus and a substrate processing system.

Plasma discharge is used for gas excitation to generate active gases containing ions, free radicals, atoms, and molecules. Active gas is widely used in various fields and is typically used in various ways such as semiconductor manufacturing processes, such as etching, deposition, cleaning, and ashing.

In recent years, wafers and LCD glass substrates for manufacturing semiconductor devices are becoming larger. Therefore, there is a demand for a plasma source with high controllability for plasma ion energy and an easily expandable plasma source having a large-area processing capability.

It is known that the use of remote plasma in a semiconductor manufacturing process using plasma is very useful.

For example, it is useful in cleaning process chambers or ashing processes for photoresist streams. However, the volume of the process chamber is also increasing as the size of the target substrate increases, so a plasma source capable of remotely supplying a high-density active gas sufficiently is required.

On the other hand, a remote plasma reactor (or referred to as a remote plasma generator) is one using a transformer coupled plasma source (transformer coupled plasma source) and one using an inductively coupled plasma source (inductively coupled plasma source). A remote plasma reactor using a transformer coupled plasma source has a structure in which a magnetic core having a primary winding coil is mounted on a reactor body of a toroidal structure. A remote plasma reactor using an inductively coupled plasma source has a structure in which an inductively coupled antenna is mounted on a reactor body of a hollow tube structure.

For example, the gas injected into the plasma reactor makes a gaseous material into a plasma form including ions, free radicals, atoms, and molecules by electrical force, and this plasma is etched, deposited, cleaned, etc. is used for this purpose.

Such a conventional plasma reaction apparatus is installed in a form surrounding the reaction body to generate plasma by exciting the gas in the annular loop space, and may include a magnetic core having a primary winding.

In this conventional plasma reactor, when gas is introduced into the annular loop space, the gas introduced through the gas inlet is divided into the left and right loop spaces of the annular loop space, that is, two gallons to generate plasma discharge in both spaces. can

However, in this conventional plasma reactor, when gas is distributed to the left and right loop spaces of the annular loop space, the flow of gas is non-uniformly distributed to both sides, and the left and right electrical characteristics due to the difference in plasma discharge Deviation, plasma pressure deviation, temperature deviation, etc. are generated, which causes many problems, such as greatly lowering plasma generation efficiency.

The present invention is to solve various problems including the above problems, by actively controlling the flow of gas to form a vortex so that the gas can be uniformly distributed to the left and right roof spaces of the annular roof space An object of the present invention is to provide a gas distribution apparatus, a gas distribution method, a plasma reaction apparatus, and a substrate processing system. However, these problems are exemplary, and the scope of the present invention is not limited thereto.

Plasma reaction apparatus according to the spirit of the present invention for solving the above problems, a reaction body in which a gas inlet is formed on one side, a gas outlet is formed on the other side, and an annular loop space is formed therein; and a gas distribution device for double-distributing the gas introduced through the gas inlet to the annular roof space.

In addition, according to the present invention, the gas distribution device, a distribution body having a gas inlet hole formed on one side and a distribution space formed therein; a first gas distribution block installed on one side of the distribution body and primarily distributing the gas introduced into the gas inlet hole; and a second gas distribution block installed on the other side of the distribution body to be spaced apart from the first gas distribution block and redistributing the firstly distributed gas to the second.

In addition, according to the present invention, the first gas distribution block, a plurality of perforations having the same diameter in at least a portion may be arranged at equal intervals.

In addition, according to the present invention, in the second gas distribution block, at least one first gas hole having a first diameter is formed in at least one part, and at least one having a second diameter smaller than the first diameter in the other part. of the second gas hole may be formed.

Also, according to the present invention, the first gas hole may be formed as a directional hole so as to be directed injection at a predetermined angle.

Also, according to the present invention, the second gas hole may be formed in a vertical direction so as to be injected in the vertical direction.

Also, according to the present invention, a plurality of the first gas holes may be arranged at least in one line to form at least one straight arrangement line or at least one curved arrangement line by being spaced apart from each other.

Further, according to the present invention, the arrangement line of the straight line or the arrangement line of the curved line may start at a portion corresponding to the left roof space and end at a portion corresponding to the right roof space when the annular roof space is viewed from above. It may be formed symmetrically left-right or diagonally symmetrically.

In addition, according to the present invention, a magnetic core formed in a shape surrounding at least a portion of the reaction body and having a primary winding to generate plasma by exciting the gas in the annular loop space may be further included. .

On the other hand, the gas distribution device according to the spirit of the present invention for solving the above problems, but supplies a gas to the reaction body in which the plasma annular loop space is formed therein, using a double distribution structure to the left and right of the annular loop space uniformly gas can be distributed.

In addition, according to the present invention, the gas inlet hole is formed on one side, the distribution body in which the distribution space is formed; a first gas distribution block installed on one side of the distribution body and primarily distributing the gas introduced into the reaction body; and a second gas distribution block installed on the other side of the distribution body to be spaced apart from the first gas distribution block and redistributing the firstly distributed gas to the second.

In addition, according to the present invention, the first gas distribution block, a plurality of perforations having the same diameter in at least a portion may be arranged at equal intervals.

In addition, according to the present invention, in the second gas distribution block, at least one first gas hole having a first diameter is formed in at least one part, and at least one having a second diameter smaller than the first diameter in the other part. of the second gas hole may be formed.

Also, according to the present invention, the first gas hole may be formed as a directional hole so as to be directed injection at a predetermined angle.

Also, according to the present invention, the second gas hole may be formed in a vertical direction so as to be injected in the vertical direction.

On the other hand, a substrate processing system according to an aspect of the present invention for solving the above problems, a process chamber in which a processing space capable of processing a substrate is formed; a plasma reaction device supplying a plasma gas to the process chamber; a gas supply line installed in the plasma reactor and supplying a plasma source gas; and in the first mode, it is possible to control the plasma source gas to be supplied to the process chamber by bypassing (bypassing) the gas supply line or the plasma reaction device, and in the second mode, the downstream gas is supplied to the and a bypass line installed between the gas supply line and the process chamber so as to bypass (bypass) the plasma reactor and be supplied to the process chamber.

In addition, according to the present invention, the plasma reaction apparatus, a reaction body having a gas inlet portion formed on one side, a gas exhaust portion formed on the other side, and an annular loop space formed therein; and a gas distribution device for double-distributing the gas introduced through the gas inlet to the annular roof space.

On the other hand, in the gas distribution method of the plasma reaction apparatus according to the spirit of the present invention for solving the above problems, a reaction body in which a gas inlet is formed on one side, a gas outlet is formed on the other side, and an annular loop space is formed therein; In the gas distribution method of a plasma reaction apparatus including a gas distribution device installed in the gas inlet and distributing gas to the annular loop space, (a) uniformly distributing the gas using a plurality of perforations having the same diameter First dispensing at one pressure; and (b) using gas holes having different diameters or angles so that the firstly distributed gas forms a vortex with deflection and is equally distributed to the left and right roof spaces of the annular roof space. It may include; a step of distributing the secondary to be biased with non-uniform pressure.

According to the gas distribution apparatus, the gas distribution method, the plasma reaction apparatus, and the substrate processing system according to an embodiment of the present invention made as described above, the gas flows to the left side of the annular loop space by actively controlling the flow of the gas to form a vortex. It can be evenly distributed between the roof space and the right roof space, and through this, the plasma generation efficiency can be maximized by preventing the left and right electrical characteristic deviation phenomenon, plasma pressure deviation phenomenon, and temperature deviation phenomenon due to the difference in plasma discharge. to have an effect. Of course, the scope of the present invention is not limited by these effects.

1 is a front cross-sectional view showing a plasma reaction apparatus according to some embodiments of the present invention.
FIG. 2 is a side cross-sectional view illustrating the plasma reaction apparatus of FIG. 1 .
3 is a plan view illustrating an example of a first gas distribution block of the plasma reactor of FIG. 1 .
4 is a plan view illustrating an example of a second gas distribution block of the plasma reactor of FIG. 1 .
FIG. 5 is a plan view illustrating another example of a second gas distribution block of the plasma reactor of FIG. 1 .
6 is a plan view illustrating another example of a second gas distribution block of the plasma reactor of FIG. 1 .
7 is a plan view illustrating another example of a second gas distribution block of the plasma reactor of FIG. 1 .
8 is a conceptual diagram illustrating a substrate processing system according to some exemplary embodiments.
9 is a flowchart illustrating a gas distribution method of the plasma reaction apparatus 100 according to some embodiments of the present invention.

Hereinafter, several preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

Examples of the present invention are provided to more completely explain the present invention to those of ordinary skill in the art, and the following examples may be modified in various other forms, and the scope of the present invention is as follows It is not limited to an Example. Rather, these embodiments are provided so as to more fully and complete the present disclosure, and to fully convey the spirit of the present invention to those skilled in the art. In addition, in the drawings, the thickness or size of each layer is exaggerated for convenience and clarity of description.

1 is a cross-sectional view illustrating a plasma reaction apparatus 100 according to some embodiments of the present invention, and FIG. 2 is a side cross-sectional view illustrating the plasma reaction apparatus 100 of FIG. 1 .

First, as shown in FIGS. 1 and 2 , the plasma reaction apparatus 100 according to some embodiments of the present invention is largely a reaction body 10 , a gas distribution apparatus 20 and a magnetic core 30 . may include

For example, as shown in FIGS. 1 and 2, the reaction body 10 has a gas inlet portion 10a formed on one side (upper side) and a gas outlet portion 10b formed on the other side (lower side). An annular loop space (B) is formed therein as a tubular structure having an overall annular shape, and the reaction body 10 can be applied to a toroidal type, that is, a remote plasma generator (RPG) of a transformer-coupled type. have.

However, the reaction body 10 is not necessarily limited to the drawings, and may be manufactured integrally, as well as a plurality of blocks may be adhered to or assembled with each other, and quartz or insulating surface-treated aluminum It can be manufactured in various shapes and materials such as blocks.

Accordingly, as shown in FIG. 1 , the gas G is introduced into the reaction body 10 through the gas inlet 10a, and the left loop space B1 of the annular roof space B is ) and the right roof space B2, respectively, may be excited into a plasma state, and this plasma may be discharged to the outside through the gas discharge unit 10b of the reaction body 10 .

In addition, for example, as shown in FIGS. 1 and 2 , the gas distribution device 20 may induce a flow of gas before the gas G is introduced into the interior of the reaction body 10 . As such, it may be a device installed in the gas inlet 10a to distribute the gas G to the annular roof space B.

More specifically, for example, as shown in FIGS. 1 and 2 , the gas distribution device 20 includes a gas inlet hole 21a formed on one side and a distribution space A formed therein. a body 21, a first gas distribution block 22-1 installed on one side of the distribution body 21 and primarily distributing the gas G introduced into the gas inlet hole 21a, and the A second gas distribution block 22-2 installed on the other side of the distribution body 21 to be spaced apart from the first gas distribution block 22-1 and redistributing the firstly distributed gas (G) to a second may include

Accordingly, the gas G is introduced into the distribution body 21 before being introduced into the reaction body 10 to the first gas distribution block 22-1 and the second gas distribution block. While passing through (22-2), the flow of the gas (G) may be actively controlled.

3 is a plan view illustrating an example of the first gas distribution block 22-1 of the plasma reaction apparatus 100 of FIG. 1 .

More specifically, for example, as shown in FIGS. 1 and 3 , in the first gas distribution block 22-1, the gas G introduced into the gas inlet hole 21a has a uniform pressure. A plurality of drilling spheres (H) having the same diameter (D) in at least a portion may be arranged at the same interval (S) so as to be distributed as a first.

Accordingly, the gas G has the same diameter D in the first gas distribution block 22-1 regardless of the position of the gas inlet hole 21a or the flow shape or pressure of the initial gas. By reducing the pressure deviation in the front, back, left, and right directions while passing through the plurality of perforations (H) arranged as (S), a uniform pressure can be primarily distributed in the interior of the distribution space (A).

Therefore, the gas G that has passed through the first gas distribution block 22-1 is distributed at a uniform pressure to reach the second gas distribution block 22-2, which will be described in more detail below. can

4 is a plan view illustrating an example of the second gas distribution block 22 - 2 of the plasma reaction apparatus 100 of FIG. 1 .

For example, as shown in FIGS. 1 and 4 , in the second gas distribution block 22-2, the gas G having passed through the first gas distribution block 22-1 has a deflection. At least one first gas hole (H1) having a first diameter (D1) in at least a portion to be redistributed to the annular roof space (B) is formed at a first interval (S1), and the first diameter in the other portion At least one second gas hole H2 having a second diameter D2 smaller than (D1) may be formed at a second interval S2. Here, the first interval S1 and the second interval S2 may be the same or different from each other.

More specifically, for example, as shown in FIG. 3 , a plurality of the first gas holes H1 are spaced apart from each other by the first interval S1 to form a single straight arrangement line L1 . can be

Here, as shown in FIG. 4, the arrangement line L1 of such a straight line starts at a portion corresponding to the left roof space B1 when the annular roof space B is viewed from above, and is then formed in the right roof space ( B2) and may be formed symmetrically left and right so that it can end with a corresponding part.

Also, for example, as shown in FIG. 2 , the first gas hole H1 may be formed as a hole in a vertical direction, but may be formed as a directional hole to be sprayed at a predetermined angle K. This is by direct injection of the gas G so as to collide with the inner circumferential surface of the reaction body 10 to form the vortex pattern of FIG. The effect of uniformly spreading into the left loop space B1 and the right loop space B2 of the can be expected.

On the other hand, the second gas hole H2 may be formed as a hole in a vertical direction. This is formed by the main stream by further accelerating the flow of the main stream of the gas G is injected in the vertical direction (vertical arrow direction in FIG. 2 ) and injected through the second gas hole H2. The vortex pattern can be displayed more clearly.

For example, the second gas hole H2 may be disposed to further promote the vortex pattern of the main stream, and may have various positions in various forms, such as being biased in the vicinity of the first gas hole H1 . can be placed in

Accordingly, the gas G having passed through the first gas distribution block 22-1 with a uniform pressure is deflected by the second gas distribution block 22-2 into the annular loop space B. can be redistributed, and this deflection can form a vertical vortex in the annular loop space B, and by actively controlling the directionality of the gas G through this vertically rotated controllable vortex , it can be expected to evenly distribute the gas G to the left roof space B1 and the right roof space B2 of the annular roof space B.

Therefore, by actively controlling the flow of the gas G to actively form a vortex in the vertical direction, the gas G is transferred to the left loop space B1 and the right loop space B2 of the annular roof space B. ), and through this, the plasma generation efficiency can be maximized by preventing the left and right electrical characteristic deviation phenomenon, plasma pressure deviation phenomenon, and temperature deviation phenomenon due to the difference in plasma discharge.

However, the second gas distribution block 22 - 2 is not necessarily limited to the drawings, and the first gas holes H1 and the second gas holes H1 of a wide variety of shapes and types are various. It can be arranged and applied in the form.

5 is a plan view illustrating another example of the second gas distribution block 22 - 3 of the plasma reaction apparatus 100 of FIG. 1 .

As shown in FIG. 5 , a plurality of first gas holes H1 of the second gas distribution block 22 - 3 are spaced apart from each other by the first interval S1 , and are arranged in two straight lines L1 . ) can be arranged to achieve

Here, as shown in FIG. 5 , one of the arrangement lines L1 of such a straight line starts from a portion corresponding to the left roof space B1 when the annular roof space B is viewed from above and starts at the middle portion. , and the other one may be formed diagonally symmetrically so as to start from a portion corresponding to the right roof space B2 and end with an intermediate portion.

Accordingly, the gas G having passed through the first gas distribution block 22-1 with a uniform pressure is deflected by the second gas distribution block 22-3 into the annular loop space B. can be redistributed, and this deflection can form a left vortex and a right vortex in the vertical direction in the annular loop space B, respectively, and through these controllable left vortex and right vortex rotated in the vertical direction, the gas ( By actively controlling the directionality of G), an even distribution of the gas G to the left roof space B1 and the right roof space B2 of the annular roof space B can be expected.

FIG. 6 is a plan view illustrating another example of the second gas distribution block 22-4 of the plasma reactor of FIG. 1 .

As shown in FIG. 6 , a plurality of first gas holes H1 of the second gas distribution block 22 - 4 are spaced apart from each other by the first interval S1 to form one curved arrangement line L2 . ) can be arranged to achieve

Here, as shown in FIG. 6 , the arrangement line L2 of this curve starts from a portion corresponding to the left roof space B1 when the annular roof space B is viewed from above, and the right roof space ( B2) and may be formed symmetrically left and right so that it can end at the corresponding part.

Accordingly, the gas G having passed through the first gas distribution block 22-1 with a uniform pressure is deflected by the second gas distribution block 22-4 into the annular loop space B. can be redistributed, and this deflection can form a vertical vortex in the annular loop space B, respectively, and actively control the directionality of the gas G through a controllable vortex that rotates in the vertical direction By doing so, it is possible to expect an even distribution of the gas G to the left roof space B1 and the right roof space B2 of the annular roof space B.

FIG. 7 is a plan view illustrating another example of the second gas distribution block 22-5 of the plasma reactor of FIG. 1 .

As shown in FIG. 7 , a plurality of first gas holes H1 of the second gas distribution block 22 - 5 are spaced apart from each other by the first interval S1 to form two curved arrangement lines L2 . ) can be arranged to achieve

Here, as shown in FIG. 7 , one of the arrangement lines L2 of such a curve starts at a portion corresponding to the left roof space B1 when the annular roof space B is viewed from above, and starts at the middle portion. , and the other one may be formed diagonally symmetrically so as to start from a portion corresponding to the right roof space B2 and end with an intermediate portion.

Accordingly, the gas G having passed through the first gas distribution block 22-1 with a uniform pressure is deflected by the second gas distribution block 22-5 into the annular loop space B. can be redistributed, and this deflection can form a left vortex and a right vortex in the vertical direction in the annular loop space B, respectively, and through these controllable left vortex and right vortex rotated in the vertical direction, the gas ( By actively controlling the directionality of G), equal distribution of the gas G into the left roof space B1 and the right roof space B2 of the annular roof space B can be expected.

In addition, for example, as shown in FIG. 1 , the magnetic core 30 is formed in a shape surrounding at least a portion of the reaction body 10 , and the gas G in the annular loop space B It may include a magnetic material having a primary winding to excite the plasma to generate plasma.

8 is a conceptual diagram illustrating a substrate processing system 1000 according to some exemplary embodiments.

As shown in FIG. 8 , the substrate processing system 1000 according to some embodiments of the present disclosure includes a process chamber C in which a processing space capable of processing a substrate W is formed, and the process chamber ( C) a plasma reaction apparatus 100 for supplying plasma gas, a gas supply line L1 installed in the plasma reaction apparatus 100 and supplying a plasma source gas (Gas 1), in the first mode, It is possible to control plasma source gas to be supplied to the process chamber by bypassing (bypassing) the gas supply line or the plasma reaction device, and in the second mode, the downstream gas (Gas 2 ) is the plasma reaction A bypass line L2 installed between the gas supply line L1 and the process chamber C to bypass (bypass) the apparatus 100 and be supplied to the process chamber C may be included. have.

Accordingly, the substrate processing system 1000 of the present invention can control the gas supply to the process chamber side through the valve switching control. For example, in the first mode, the plasma gas source Gas 1 is connected to the first valve switch ( By controlling the SV1 to be on and the second valve switch SV2 to be turned off, the plasma reaction apparatus 100 may be bypassed to control gas supply.

In addition, the downstream gas Gas 2 may control the gas supply by controlling the first valve switch SV1 to be turned off and the second valve switch SV2 to be turned on.

Here, the plasma gas source (Gas 1) may be O ₂ , N ₂ , Ar, NF ₃ , He gas, and the downstream gas source (Gas 2) is NF ₃ , CF ₄ , CHF ₃ , C ₂ F ₆ , C ₂ HF ₅ , C ₃ F ₈ , C ₄ F ₈ , XeF ₂ , Cl ₂ , ClF ₃ , H ₂ , NH ₃ .

In addition, for example, as shown in FIGS. 1 to 7 , in the plasma reaction apparatus 100 , a gas inlet 10a is formed on one side and a gas outlet 10b is formed on the other side, and the inside It may include a reaction body 10 in which the annular loop space is formed, and a gas distribution device 20 for double-distributing the gas introduced through the gas inlet to the annular loop space.

9 is a flowchart illustrating a gas distribution method of the plasma reaction apparatus 100 according to some embodiments of the present invention.

As shown in FIG. 9 , in the gas distribution method of the plasma reaction apparatus 100 according to some embodiments of the present invention reflecting the technical spirit of the present invention, a gas inlet 10a is formed on one side, and the other side A gas outlet 10b is formed in the reaction body 10 having an annular loop space B formed therein, and installed in the gas inlet 10a, and gas G is introduced into the annular loop space B In the gas distribution method of the plasma reaction apparatus 100 including the gas distribution apparatus 20 for distributing the The first distribution by pressure and (b) the first distribution of the gas G has a deflection and forms a vortex into the left loop space B1 and the right loop space B2 of the annular roof space B The method may include the step of distributing the gas (G) biasedly to a non-uniform pressure secondary by using the gas holes (H1) and (H2) having different diameters or angles to be evenly distributed.

Although the present invention has been described with reference to the embodiments shown in the drawings, which are merely exemplary, those skilled in the art will understand that various modifications and equivalent other embodiments are possible therefrom. Therefore, the true technical protection scope of the present invention should be determined by the technical spirit of the appended claims.

10: reaction body
10a: gas inlet
10b: gas outlet
G: gas
A: distribution space
B: annular loop space
B1: left loop space
B2: Right roof space
20: gas distribution device
21: dispensing body
21a: gas inlet hole
22-1: first gas distribution block
22-2, 22-3, 22-4, 22-5: second gas distribution block
30: magnetic core
D: diameter
D1: first diameter
D2: second diameter
H: punch ball
H1: first gas hole
H2: second gas hole
S: thickness
S1: first interval
S2: second interval
L1, L2: batch line
W: substrate
C: process chamber
L-1: gas supply line
L-2: Bypass line
100: plasma reaction device
1000: substrate processing system

Claims (18)

a reaction body having a gas inlet portion formed on one side, a gas outlet portion formed on the other side, and an annular loop space formed therein; and
A plasma reaction apparatus including a; a gas distribution device for double-distributing the gas introduced through the gas inlet to the annular loop space. The method of claim 1,
The gas distribution device,
a distribution body having a gas inlet hole formed on one side and a distribution space formed therein;
a first gas distribution block installed on one side of the distribution body and primarily distributing the gas introduced into the gas inlet hole; and
a second gas distribution block installed on the other side of the distribution body so as to be spaced apart from the first gas distribution block and redistributing the firstly distributed second gas;
Containing, plasma reaction device. 3. The method of claim 2,
The first gas distribution block,
A plurality of perforations having the same diameter are disposed at equal intervals in at least a portion of the plasma reactor. 3. The method of claim 2,
The second gas distribution block,
At least one first gas hole having a first diameter is formed in at least one portion, and at least one second gas hole having a second diameter smaller than the first diameter is formed in the other portion. 5. The method of claim 4,
The first gas hole,
Plasma reaction apparatus that is formed with a directional hole so as to be directed injection at a predetermined angle. 5. The method of claim 4,
The second gas hole,
Plasma reaction device that is formed in a vertical direction hole so as to be sprayed in the vertical direction. 5. The method of claim 4,
A plurality of the first gas holes are spaced apart from each other and arranged at least in one line to form at least one linear arrangement line or at least one curved arrangement line. 8. The method of claim 7,
The arrangement line of a straight line or the arrangement line of a curve is,
When the annular roof space is viewed from above, the plasma reactor is formed symmetrically or diagonally so as to start at a portion corresponding to the left roof space and end at a portion corresponding to the right roof space. The method of claim 1,
a magnetic core formed in a shape surrounding at least a portion of the reaction body and having a primary winding configured to generate a plasma by exciting the gas in the annular loop space;
Further comprising a, plasma reaction device. A gas distribution device for supplying a gas to a reaction body having a plasma annular loop space formed therein, and uniformly distributing the gas to left and right sides of the annular loop space using a dual distribution structure. 11. The method of claim 10,
a distribution body having a gas inlet hole formed on one side and a distribution space formed therein;
a first gas distribution block installed on one side of the distribution body and primarily distributing the gas introduced into the reaction body; and
a second gas distribution block installed on the other side of the distribution body so as to be spaced apart from the first gas distribution block and redistributing the firstly distributed second gas;
A gas distribution device comprising a. 12. The method of claim 11,
The first gas distribution block,
A gas distribution device, wherein a plurality of perforations of the same diameter are disposed at equal intervals in at least a portion thereof. 12. The method of claim 11,
The second gas distribution block,
At least one first gas hole having a first diameter is formed in at least one portion, and at least one second gas hole having a second diameter smaller than the first diameter is formed in the other portion. 14. The method of claim 13,
The first gas hole,
A gas distribution device, which is formed into a directional hole for directed injection at an angle. 14. The method of claim 13,
The second gas hole,
A gas distribution device that is formed in a vertical direction hole so as to be sprayed in the vertical direction. a process chamber in which a processing space capable of processing a substrate is formed;
a plasma reaction device supplying a plasma gas to the process chamber;
a gas supply line installed in the plasma reactor and supplying a plasma source gas; and
In the first mode, the plasma source gas may be controlled to be supplied to the process chamber by bypassing (bypassing) the gas supply line or the plasma reactor, and in the second mode, the downstream gas may be supplied to the plasma a bypass line installed between the gas supply line and the process chamber so as to bypass (bypass) the reactor and be supplied to the process chamber;
A substrate processing system comprising: 17. The method of claim 16,
The plasma reaction device,
a reaction body having a gas inlet portion formed on one side, a gas outlet portion formed on the other side, and an annular loop space formed therein; and
a gas distribution device for double-distributing the gas introduced through the gas inlet to the annular roof space;
A substrate processing system comprising a. A gas inlet portion is formed on one side, a gas outlet portion is formed on the other side, a reaction body having an annular loop space formed therein, and a gas distribution device installed in the gas inlet portion and distributing gas to the annular loop space A method for distributing gas in a plasma reaction apparatus, the method comprising:
(a) first distributing the gas at a uniform pressure using a plurality of perforations having the same diameter; and
(b) gas holes having different diameters or angles so that the firstly distributed gas forms a vortex with deflection so that it can be equally distributed to the left and right roof spaces of the annular roof space Secondary dispensing biased with non-uniform pressure;
Including, a gas distribution method of a plasma reaction device.

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