KR20220013777A - Biodegradable electroceuticals and method of manufacturing the same - Google Patents

Abstract

The present invention provides a biodegradable electronic medicine that realizes lightweightness, thinness, shortness, and simplicity by integrating an electronic circuit, and dissolves in the body after a certain period of time and does not require an additional surgery. The biodegradable electronic medicine comprises: a laminated plurality of material layers comprising at least one among an insulator area, a conductor area, and a semiconductor area; one or more electronic elements configured by a combination of the plurality of material layers; and a penetration hollow part wherein a nerve cell is inserted into a center part of the plurality of material layers.

Description

Biodegradable electroceuticals and method of manufacturing the same

The technical idea of the present invention relates to an electronic drug, and more particularly, to a biodegradable electronic drug that self-decomposes in the body and a method for manufacturing the same.

In recent years, life expectancy has increased, and medical technology has been remarkably developed. In particular, research on new electronic drugs is increasing. Electroceutical is a compound word of electronic and pharmaceutical, and can produce therapeutic effects by controlling nerve function using electrical energy. Conventional drugs flow along blood vessels, so there is a fear that side effects may occur in areas where treatment is not desired. However, electronic drugs are relatively safe because they select a specific site requiring treatment.

Conventional electronic drugs or nerve stimulators have the following limitations. First, it is made of semi-permanent material, and additional surgery is required to remove it from the body after treatment is finished. Second, it has a complicated wiring configuration for configuring an electronic circuit, which causes great inconvenience when inserted into the human body. The fabrication of electronic devices corresponding to a single shape is complicated and there is a risk of functional deterioration, and fourthly, it requires a wide space for invasiveness in the body by electrodes and nerve stimulators disposed in the body.

US Patent Publication No. 2018/0305569

The technical problem to be achieved by the technical idea of the present invention is to solve the above problems, and a biodegradable electronic drug that does not require additional surgery because it is light and thin by integrating an electronic circuit, and is decomposed in the body after a certain period of time, and its To provide a manufacturing method.

However, these tasks are exemplary, and the technical spirit of the present invention is not limited thereto.

According to one aspect of the present invention, there is provided a biodegradable electronic drug and a method for manufacturing the same, which realize light, thin and simple by integrating electronic circuits, and are decomposed in the body after a certain period of time and do not require additional surgery,

According to an embodiment of the present invention, the biodegradable electronic drug includes at least one of an insulator region, a conductor region, and a semiconductor region, and includes: a plurality of stacked material layers; one or more electronic devices configured by a combination of the plurality of material layers; and a through-hollow part into which nerve cells are inserted in the center of the plurality of material layers.

According to an embodiment of the present invention, the electronic devices may be configured across a plurality of material layers in a vertical direction.

According to an embodiment of the present invention, the electronic devices may include at least one of a diode, a capacitor, an inductor, a resistor, a transistor, an electrode, a rectifying device, a switching device, a memory device, a power storage device, and a vibration device. .

According to an embodiment of the present invention, the material layers include: a first layer comprising a first conductive region; a second layer comprising a semiconductor region; and a third layer including a second conductor region, wherein the first layer, the second layer, and the third layer are sequentially stacked, the first conductor region, the semiconductor region, and the second conductor The regions may be vertically aligned to constitute a diode as the electronic device.

According to an embodiment of the present invention, the material layers include: a first layer comprising a first conductive region; a second layer comprising an insulator region; and a second layer including a second conductor region, wherein the first layer, the second layer, and the third layer are sequentially stacked, the first conductor region, the insulator region, and the second conductor The regions may be vertically aligned to constitute the capacitor as the electronic device.

According to an embodiment of the present invention, the material layers include: a first layer comprising a first conductive region; a second layer comprising a first insulator region; a third layer comprising a second conductive region; a fourth layer comprising a second insulator region; a fifth layer comprising a third conductive region; a sixth layer comprising a third insulator region; a seventh layer including a fourth conductor region; wherein the first to seventh layers are sequentially stacked, the first conductor region and the third conductor region are electrically connected, and the second conductor region and the fourth conductor region are electrically connected, and the first conductor region, the first insulator region, and the second conductor region are vertically aligned to constitute the first capacitor, the second conductor region, the A second insulator region, and the third conductor region are vertically aligned to constitute the second capacitor, and the third conductor region, the third insulator region, and the fourth conductor region are vertically aligned to form the third capacitor. Capacitors can be configured.

According to an embodiment of the present invention, the first capacitor and the second capacitor or the second capacitor and the third capacitor are arranged to cross each other and engage,

According to an embodiment of the present invention, the material layers may include: a first layer including a first conductor region and a first insulator region disposed so that both ends of the first conductor region are not connected; a second layer comprising a second conductor region in contact with an end of the first conductor region and a second insulator region disposed to cover and insulate the remainder of the first conductor region; and a third layer including a third conductor region in contact with the second conductor region at an end thereof and a third insulator region disposed so that both ends of the first conductor region are not connected to each other. A second layer and a third layer may be sequentially stacked, and the first conductor region, the second conductor region, and the third conductor region may be vertically disposed to configure the inductor as the electronic device.

According to an embodiment of the present invention, the first conductor region, the second conductor region, and the third conductor region may be arranged to wind the through hollow portion in the same direction.

According to an embodiment of the present invention, the electronic devices may include a diode, a capacitor, and an inductor, and the capacitor and the inductor may be connected in parallel and connected to the diode in series.

According to an embodiment of the present invention, the capacitor and the inductor may be insulated from each other by an insulator region formed in the plurality of material layers.

According to an embodiment of the present invention, an upper electrode electrically connecting the uppermost side of the capacitor and the uppermost side of the inductor may be further included.

According to an embodiment of the present invention, a lower electrode electrically connecting the lowermost side of the diode may be further included.

According to an embodiment of the present invention, at least one of the insulator region, the conductor region, and the semiconductor region may include a biodegradable metal material.

According to an embodiment of the present invention, the conductive region includes magnesium (Mg), iron (Fe), zinc (Zn), molybdenum (Mo), tungsten (W), calcium (Ca), potassium (K), and sodium. (Na), silicon (Si), a-IGZO, germanium (Ge), or an alloy thereof may be included.

According to an embodiment of the present invention, the method for manufacturing the biodegradable electronic drug comprises the steps of: providing an electronic circuit including one or more electronic circuit elements; designing a three-dimensional electronic drug design structure based on the electronic circuit; designing a plurality of design layers by tomographically decomposing the three-dimensional electronic drug design structure; stacking a plurality of material layers based on the design layers; and combining the plurality of material layers to form a biodegradable electronic drug in which electronic devices corresponding to the electronic circuit elements are respectively formed and disposed.

According to an embodiment of the present invention, the biodegradable electronic drug may include a through hollow part into which a nerve cell is inserted in the center of the plurality of material layers.

According to an embodiment of the present invention, the step of stacking the plurality of material layers may be performed by discharging at least one material of a conductor, an insulator, and a semiconductor using a 3D printer.

According to an embodiment of the present invention, in the step of stacking the plurality of material layers, at least one material of a conductor, an insulator, and a semiconductor is discharged directly on the previously formed material layer using the 3D printer. This can be done by forming a layer of another material.

According to an embodiment of the present invention, the bonding of the plurality of material layers may be performed using at least one of heat treatment, light irradiation treatment, chemical treatment, and electrochemical treatment.

According to the technical spirit of the present invention, the biodegradable electronic drug can overcome the limitations of the conventional implantable electronic drug. Conventional implantable electronic drugs, up to now, require removal of the body after use due to the use of permanent substances, the need for complex wiring connections between electronic devices, the need to manufacture electronic devices according to the complex shape of the body, and efficient use of internal space for electrode and device placement There are limitations such as the need for use. Therefore, the biodegradable electronic drug according to the technical idea of the present invention is constructed using a biodegradable material, thereby inducing natural extinction after use, and manufacturing using a 3D printer method, thereby simplifying the complex shape and configuration and manufacturing method. You can do it simply.

The above-described effects of the present invention have been described by way of example, and the scope of the present invention is not limited by these effects.

1 is a schematic diagram showing a biodegradable electronic drug according to an embodiment of the present invention.
2 is a flowchart illustrating a method for manufacturing a biodegradable electronic drug according to an embodiment of the present invention.
3 is a circuit diagram showing an electronic circuit of a biodegradable electronic drug according to an embodiment of the present invention.
4 is a schematic diagram illustrating a three-dimensional stacked model for designing a three-dimensional electronic drug design structure of a biodegradable electronic drug according to an embodiment of the present invention.
5 is a schematic diagram illustrating a biodegradable electronic drug according to an embodiment of the present invention.
6 to 21 show a method for manufacturing a biodegradable electronic drug according to an embodiment of the present invention according to the manufacturing process.
22 is a schematic diagram illustrating a three-dimensional printing apparatus for performing a method for manufacturing a biodegradable electronic drug according to an embodiment of the present invention.
23 is a photograph showing a laminated structure formed by using a 3D printing apparatus for performing a method for manufacturing a biodegradable electronic drug according to an embodiment of the present invention.
24 is a photograph illustrating a biodegradable electronic drug formed by using a 3D printing apparatus for performing a method for manufacturing a biodegradable electronic drug according to an embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments of the present invention are provided to more completely explain the technical idea of the present invention to those of ordinary skill in the art, and the following examples may be modified in various other forms, The scope of the technical idea is not limited to the following examples. Rather, these embodiments are provided so as to more fully and complete the present disclosure, and to fully convey the technical spirit of the present invention to those skilled in the art. In this specification, the same reference numerals refer to the same elements throughout. Furthermore, various elements and regions in the drawings are schematically drawn. Accordingly, the technical spirit of the present invention is not limited by the relative size or spacing drawn in the accompanying drawings.

In this specification, a "design layer" refers to a layer on a blueprint, and a "material layer" refers to a layer implemented as a real thing in a biodegradable electronic drug. In addition, "electronic circuit element" refers to an electronic element on a circuit diagram, and "electronic element" refers to an electronic element implemented as a real thing in a biodegradable electronic drug.

The electronic drug refers to a medical device that generates a drug-like effect on the human body by stimulating the central peripheral nervous system using an electronic device that generates an electrical signal, unlike general drugs made of chemical substances. The range to which the electronic drug can be applied may include all diseases that can be treated using electrical stimulation, for example, chronic intractable diseases such as diabetes, asthma, chronic airway obstruction, arthritis, high blood pressure, gastrointestinal disorders, and the like. The electronic jar is divided into non-wearable (1st grade), wearable (2nd grade) and insertable (3rd grade and 4th grade) types. In the U.S. and Europe, the number of approvals and success cases for such e-drugs is increasing and investment is being made continuously.

1 is a schematic diagram showing a biodegradable electronic drug 100 according to an embodiment of the present invention.

Referring to Figure 1, the biodegradable electronic drug 100 is provided with a through hollow portion 190 therein. A treatment target nerve cell (NC) requiring treatment may be inserted into the through hollow part 190 . For example, the nodes of the nerve cells NC to be treated in the cut or damaged region CR to be treated may be respectively inserted from the upper side and the lower side of the through hollow part 190 to be connected to each other. Then, by transmitting an electrical signal to the target nerve cell (NC) by the electronic devices provided in the biodegradable electronic drug 100, it is possible to bond and treat the target nerve cell (NC). In addition, the biodegradable electronic drug 100 may be formed as a biodegradable material, and thus may be decomposed and absorbed in the human body after treatment is completed or a certain period of time has elapsed, thus eliminating the need for a separate removal operation.

Hereinafter, the configuration and manufacturing method of the biodegradable electronic drug 100 will be described by way of example. However, the following description is exemplary and the present invention is not limited thereto.

2 is a flowchart illustrating a method (S100) for manufacturing a biodegradable electronic drug according to an embodiment of the present invention.

Referring to Figure 2, the manufacturing method (S100) of the biodegradable electronic drug, providing an electronic circuit including one or more electronic circuit elements (S110); Based on the electronic circuit, designing a three-dimensional electronic drug design structure (S120); designing a plurality of design layers by tomographically decomposing the three-dimensional electronic drug design structure (S130); stacking a plurality of material layers based on the design layers (S140); and combining the plurality of material layers to form a biodegradable electronic drug, in which electronic devices corresponding to the electronic circuit elements are formed and disposed, respectively (S150).

A biodegradable electronic drug may be formed by using the biodegradable electronic drug manufacturing method ( S100 ) of FIG. 2 .

The biodegradable electronic drug includes at least one of an insulator region, a conductor region, and a semiconductor region, and includes: a plurality of stacked material layers; one or more electronic devices configured by a combination of the plurality of material layers; and a through-hollow part into which nerve cells are inserted in the center of the plurality of material layers.

The electronic devices may be configured to span multiple layers of the material in a vertical direction.

The electronic devices may include at least one of a diode, a capacitor, an inductor, a resistor, a transistor, an electrode, a rectifying device, a switching device, a memory device, a power storage device, and a vibration device.

The material layers may include: a first layer comprising a first conductive region; a second layer comprising a semiconductor region; and a third layer including a second conductor region, wherein the first layer, the second layer, and the third layer are sequentially stacked, the first conductor region, the semiconductor region, and the second conductor The regions may be vertically aligned to constitute a diode as the electronic device.

The material layers may include: a first layer comprising a first conductive region; a second layer comprising an insulator region; and a second layer including a second conductor region, wherein the first layer, the second layer, and the third layer are sequentially stacked, the first conductor region, the insulator region, and the second conductor The regions may be vertically aligned to constitute the capacitor as the electronic device.

The material layers may include: a first layer comprising a first conductive region; a second layer comprising a first insulator region; a third layer comprising a second conductive region; a fourth layer comprising a second insulator region; a fifth layer comprising a third conductor region; a sixth layer comprising a third insulator region; a seventh layer including a fourth conductor region; wherein the first to seventh layers are sequentially stacked, the first conductor region and the third conductor region are electrically connected, and the second conductor region and the fourth conductor region are electrically connected, and the first conductor region, the first insulator region, and the second conductor region are vertically aligned to constitute the first capacitor, the second conductor region, the A second insulator region, and the third conductor region are vertically aligned to constitute the second capacitor, and the third conductor region, the third insulator region, and the fourth conductor region are vertically aligned to form the third capacitor. Capacitors can be configured.

The first capacitor and the second capacitor or the second capacitor and the third capacitor may be disposed to cross each other and engage with each other.

The material layers may include: a first layer including a first conductor region and a first insulator region disposed so that both ends of the first conductor region are not connected; a second layer comprising a second conductor region in contact with an end of the first conductor region and a second insulator region disposed to cover and insulate the remainder of the first conductor region; and a third layer including a third conductor region in contact with the second conductor region at an end thereof and a third insulator region disposed so that both ends of the first conductor region are not connected to each other. A second layer and a third layer may be sequentially stacked, and the first conductor region, the second conductor region, and the third conductor region may be vertically disposed to configure the inductor as the electronic device.

The first conductor region, the second conductor region, and the third conductor region may be arranged to wind the through hollow portion in the same direction.

The electronic devices may include diodes, capacitors, and inductors. The capacitor and the inductor may be connected in parallel to be connected in series to the diode.

The capacitor and the inductor may be insulated from each other by insulator regions formed in the plurality of material layers.

An upper electrode electrically connecting the uppermost side of the capacitor and the uppermost side of the inductor may be further included.

A lower electrode electrically connecting the lowermost side of the diode may be further included.

At least one of the insulator region, the conductor region, and the semiconductor region may include a biodegradable metal material.

The insulator region may include various insulating materials or dielectric materials.

The conductor region includes magnesium (Mg), iron (Fe), zinc (Zn), molybdenum (Mo), tungsten (W), calcium (Ca), potassium (K), sodium (Na), silicon (Si), a-IGZO, germanium (Ge), or an alloy thereof may be included.

The semiconductor region may include various semiconductor materials, and may include a semiconductor material having p-type or n-type characteristics by doping.

Hereinafter, an example of the biodegradable electronic drug 100 formed by the manufacturing method (S100) of the biodegradable electronic drug will be described.

First, the step of providing an electronic circuit including one or more electronic circuit elements of FIG. 2 ( S110 ) is performed. Accordingly, the circuit diagram of FIG. 3 can be derived.

Figure 3 is a circuit diagram showing the electronic circuit (100_C) of the biodegradable electronic drug 100 according to an embodiment of the present invention.

Referring to FIG. 3 , an example of implementing the step S110 of providing the electronic circuit is shown. The electronic circuit 100_C is an electronic circuit for the biodegradable electronic drug 100, and includes a diode (DI), a capacitor (CA), and an inductor (IN) as the electronic circuit elements. The electronic circuit elements may include various electronic circuit elements, for example, at least one of a diode, a capacitor, and an inductor, a resistor, a transistor, an electrode, a rectifying element, a switching element, a memory element, a power storage element, and a vibration element. may include

In the electronic circuit 100_C, the capacitor CA and the inductor IN may be connected in parallel to the diode DI in series. Although the diode DI, the capacitor CA, and the inductor IN are illustrated in the singular, these are exemplary and a case in which each is included as a plurality is also included in the technical spirit of the present invention. In addition, the present invention is not limited to the number, arrangement, and type of the electronic circuit elements.

The electronic circuit 100_C may receive power wirelessly from the external wireless power source 105 . That is, the LC circuit in the electronic circuit 100_C resonates by the induced current from the external wireless power source 105 to receive power.

The electronic circuit 100_C may have a first wiring 108 and a second wiring 109 , and the first wiring 108 and the second wiring 109 are electrically or physically connected to the treatment target nerve cell NC. can be connected or contacted. Accordingly, the electronic circuit 100_C receives power from the external wireless power source 105 to generate an electrical signal, and transmits the electrical signal to the treatment target nerve cell NC through the first wiring 108 and the second wiring 109 . ), and thus an electrical signal for treatment may be transmitted to the treatment target region CR.

Next, based on the electronic circuit of FIG. 2, a step (S120) of designing a three-dimensional electronic drug design structure is performed. Illustratively, conditions for designing the three-dimensional electronic drug design structure based on the electronic circuit 100_C are as follows. The resonant frequency is 25 MHz, the capacitor includes at least four layers, the inductor is composed of a coil wound through the hollow portion 190 5 times, and the diode is disposed on the lower side. Accordingly, the 3D stacked model 100_M of FIG. 4 may be derived.

4 is a schematic diagram illustrating a three-dimensional stacked model 100_M for designing a three-dimensional electronic drug design structure of the biodegradable electronic drug 100 according to an embodiment of the present invention.

Referring to FIG. 4 , the three-dimensional stacked model 100_M of the biodegradable electronic drug 100 may be configured by stacking a plurality of planar layers in three dimensions. In the three-dimensional stacked model 100_M, a diode is arranged on the lower side, a capacitor is arranged on one side, an inductor surrounding the through hollow part 190 is arranged on the other side, and an electrode is arranged on the uppermost side and the lowest side. can be designed as

Next, the three-dimensional electronic drug design structure 100_D of FIG. 2 is tomographically decomposed to design a plurality of design layers ( S130 ). Then, based on the design layers, the step of forming material layers ( S140 ) is performed. Then, by stacking the plurality of material layers, the electronic devices corresponding to each of the electronic circuit elements are formed and arranged, forming a biodegradable electronic drug (S150); is performed. Accordingly, the biodegradable electronic drug 100 of FIG. 5 may be formed.

The step ( S140 ) of stacking the material layers may be performed using a 3D printer. Specifically, the step of stacking the plurality of material layers ( S140 ) may be performed by discharging at least one material of a conductor, an insulator, and a semiconductor using a 3D printer. In addition, the stacking of the plurality of material layers ( S140 ) may include discharging at least one material of a conductor, an insulator, and a semiconductor directly onto the previously formed material layer using the 3D printer to form another material layer. This can be done by forming

Combining the plurality of material layers ( S150 ) may be performed using at least one of heat treatment, light irradiation treatment, chemical treatment, and electrochemical treatment.

5 is a schematic diagram illustrating a biodegradable electronic drug 100 according to an embodiment of the present invention.

Referring to FIG. 5 , the illustrated biodegradable electronic drug 100 may also be applied to a diagram showing the three-dimensional electronic drug design structure 100_D described above. That is, the description of the biodegradable electronic drug 100 below may also be understood as a description of the three-dimensional electronic drug design structure 100_D.

The biodegradable electronic drug 100 may have a configuration in which a plurality of material layers are stacked in three dimensions. Therefore, when the biodegradable electronic drug 100 is monolayer decomposed, it can be separated into a plurality of material layers. In the same manner, the three-dimensional electronic drug design structure 100_D may have a configuration in which a plurality of design layers are stacked in three dimensions. can be separated into

The biodegradable electronic drug 100 may have a through hollow part 190 into which a nerve cell is inserted in the center. In addition, the three-dimensional electronic drug design structure 100_D of the biodegradable electronic drug 100 has a diode disposed on the lower side, a capacitor (shown in blue) is disposed on one side, and a through hollow part 190 on the other side. An extended inductor is disposed while wrapping to include the inside. The diode, the capacitor, and the inductor are formed in a direction perpendicular to a plane formed by the design layer. In this case, each of the diode, the capacitor, and the inductor may be designed to span a plurality of design layers.

The forming of the material layers may be performed using a 3D printer.

6 to 21 show a manufacturing method of the biodegradable electronic drug 100 according to an embodiment of the present invention according to the manufacturing process.

6 to 21 , a top view is shown on the left, and side views for each side are shown on the right. In addition, the following manufacturing process will be exemplarily described for forming the biodegradable electronic drug 100 using a three-dimensional printing apparatus described below. The term "line" described below may be formed by the filament discharged by the 3D printing device. Also, note that in FIGS. 6 to 21, "layer" is described to refer to "design layer" and "material layer".

Referring to FIG. 6 , a first layer 1 is formed. The first layer 1 may be formed by forming the first insulator region 121 and the first conductor region 141 .

In the first side surface 11 , the first conductor region 141 may be formed to extend outwardly, and may be formed by one or more lines. In addition, the first conductor region 141 may extend to be inserted between the first insulator region 121 from the second side surface 12 .

In the second side surface 12 , the first insulator region 121 may be formed to extend outwardly, and may be formed by one or more lines. The first conductor region 141 may extend to be disposed between the first insulator regions 121 . The first conductor region 141 disposed on the second side surface 12 may be formed of one or more lines.

On the third side surface 13 , the first insulator region 121 may be formed to extend outwardly, and may be formed in one or more lines.

On the fourth side surface 14 , the first insulator region 121 may be formed to extend outwardly, and may be formed by one or more lines.

The first conductor region 141 formed on the first side 11 and the first insulator region 121 formed on the second side 12 , the third side 13 and the fourth side 14 form an outer wall. can do.

Referring to FIG. 7 , a second layer 2 is formed. The second layer 2 may be formed by forming the second insulator region 122 , the second conductor region 142 , and the semiconductor region 152 .

In the first side 11 , the second conductor region 142 may be formed to extend outwardly, and may be formed by one or more lines.

In the second side surface 12 , the second insulator region 122 may be formed to extend outwardly and may be formed in one or more lines. In addition, the semiconductor region 152 may be formed to extend between the second insulator regions 122 . The semiconductor region 152 disposed on the second side surface 12 may be formed of one or more lines.

On the third side surface 13 , the second insulator region 122 may be formed to extend outwardly and may be formed as at least one line. In addition, the second conductor region 142 may be formed to extend so as to be disposed inside the second insulator region 122 , or may be formed in one or more lines.

On the fourth side surface 14 , the second insulator region 122 may be formed to extend to the outermost portion, and may be formed by at least one line. In addition, the second conductor region 142 may be formed to extend so as to be disposed inside the second insulator region 122 , or may be formed in one or more lines.

A second conductor region 142 formed on the first side 11 and a second insulator region 122 formed on the second side 12 , the third side 13 and the fourth side 14 form an outer wall. can do.

The first conductor region 141 of the first layer 1 and the second conductor region 142 of the second layer 2 in contact with each other may be bonded to each other to be electrically connected to each other. The first insulator region 121 of the first layer 1 and the second insulator region 122 of the second layer 2 in contact with each other may be bonded to each other by sintering or the like.

Referring to FIG. 8 , a third layer 3 is formed. The third layer 3 may be formed by forming the third insulator region 123 and the third conductor region 143 .

In the first side 11 , the third conductor region 143 may be formed to extend outwardly, and may be formed by one or more lines.

In the second side surface 12 , the third insulator region 123 may be formed to extend outwardly, and may be formed by one or more lines. The third conductor region 143 may extend to be disposed between the third insulator regions 123 . The third conductor region 143 disposed on the second side 12 may be formed of one or more lines. That is, the third conductor region 143 and the third insulator region 123 may be alternately disposed.

On the third side surface 13 , the third insulator region 123 may be formed to extend outwardly, and may be formed by one or more lines.

On the fourth side surface 14 , the third insulator region 123 may be formed to extend outwardly, and may be formed by one or more lines.

A third insulator region 123 formed on the first side 11 , the second side 12 , the third side 13 , and the fourth side 14 may form an outer wall.

The second conductor region 142 of the second layer 2 and the third conductor region 143 of the third layer 3 contacting each other may be bonded to each other to be electrically connected to each other. The second insulator region 122 of the second layer 2 and the second insulator region 123 of the third layer 3 in contact with each other may be bonded to each other by sintering or the like.

Referring to FIG. 9 , a fourth layer 4 is formed. A fourth layer 4 may be formed by forming the fourth insulator region 124 and the fourth conductor region 144 .

In the first side 11 , the fourth conductor region 144 may be formed to extend outwardly, and may be formed by one or more lines. In addition, the fourth insulator region 124 may be formed to extend so as to be disposed inside the fourth conductor region 144 , or may be formed in one or more lines.

On the second side surface 12 , the fourth conductor region 144 may be formed to extend outwardly, and may be formed from one or more lines. In addition, the fourth insulator region 124 may be formed to extend so as to be disposed inside the fourth conductor region 144 , or may be formed in one or more lines.

On the third side surface 13 , the fourth insulator region 124 may be formed to extend outwardly, and may be formed by one or more lines.

In the fourth side surface 14 , a fourth insulator region 124 is formed in an outermost partial region, and may be formed of one or more lines. In addition, the fourth conductor region 144 may be formed in some other outermost region, and may be formed in one or more lines. The fourth insulator region 124 may be formed to extend so as to be disposed inside the fourth conductor region 144 , and may be formed in one or more lines.

A fourth conductor region 144 formed on the first side 11 , the second side 12 and the fourth side 14 , and a fourth insulator region formed on the third side 13 and the fourth side 14 ( 124) may form an outer wall.

The third conductor region 143 of the third layer 3 and the fourth conductor region 144 of the fourth layer 4 contacting each other may be bonded to each other to be electrically connected to each other. The third insulator region 123 of the third layer 3 and the fourth insulator region 124 of the fourth layer 4 in contact with each other may be bonded to each other by sintering or the like.

Referring to FIG. 10 , a fifth layer 5 is formed. The fifth layer 5 may be formed by forming the fifth insulator region 125 and the fifth conductor region 145 .

In the first side surface 11 , the fifth insulator region 125 may be formed to extend outwardly, and may be formed by one or more lines.

In the second side surface 12 , the fifth conductor region 145 may be formed to extend to a partial region of the outermost portion, and may be formed in one or more lines. In addition, the fifth insulator region 125 may be formed in another partial region of the outermost portion, and may be formed of one or more lines. In addition, the fifth insulator region 125 may be formed to extend so as to be disposed inside the fifth conductor region 145 , or may be formed in one or more lines.

On the third side surface 13 , the fifth insulator region 125 may be formed to extend outwardly, and may be formed by one or more lines.

On the fourth side surface 14 , a fifth insulator region 125 is formed in an outermost partial region, and may be formed of one or more lines. In addition, the fifth conductor region 145 may be formed in some other outermost region, and may be formed in one or more lines. The fifth insulator region 125 may be formed to extend so as to be disposed inside the fifth conductor region 145 , or may be formed in one or more lines.

A fifth conductor region 145 formed on the second side 12 and the fourth side 14 , and the first side 11 , the second side 12 , the third side 13 , and the fourth side 14 . ) formed in the fifth insulator region 125 may form an outer wall.

The fourth conductor region 144 of the fourth layer 3 and the fifth conductor region 145 of the fifth layer 5 contacting each other may be bonded to each other to be electrically connected to each other. The fourth insulator region 124 of the fourth layer 4 and the fifth insulator region 125 of the fifth layer 5 in contact with each other may be bonded to each other by sintering or the like.

Referring to FIG. 11 , a sixth layer 6 is formed. A sixth layer 6 may be formed by forming the sixth insulator region 126 and the sixth conductor region 146 .

In the first side surface 11 , the sixth conductor region 146 may be formed to extend to an outermost partial region, and may be formed in one or more lines. In addition, the sixth insulator region 126 may be formed in another partial region of the outermost portion, and may be formed of one or more lines. In addition, the sixth insulator region 126 may be formed to extend so as to be disposed inside the sixth conductor region 146 , or may be formed in one or more lines.

In the second side surface 12 , the sixth conductor region 146 may be formed to extend to a partial region of the outermost portion, and may be formed in one or more lines. The sixth conductor regions 146 may be spaced apart and disposed on both sides in a separated state. A sixth insulator region 126 may be disposed in some other outermost region to isolate the sixth conductor region 146 , and a sixth insulator region 126 is formed inside the sixth conductor region 146 . To be arranged, it may be formed to extend, and may be formed from one or more lines. In addition, the sixth conductor region 146 may be formed to extend to be disposed inside the sixth insulator region 126 . In addition, the sixth insulator region 126 may be formed to extend to be disposed inside the sixth conductor region 146 . That is, the sixth conductor region 146 and the sixth insulator region 126 may be alternately disposed.

On the third side surface 13 , the sixth conductor region 146 may be formed to extend outwardly, and may be formed by one or more lines. In addition, the sixth insulator region 126 may be formed to extend so as to be disposed inside the sixth conductor region 146 , or may be formed in one or more lines.

On the fourth side 14 , a sixth conductor region 146 may be formed extending outwardly, and may be formed of one or more lines. In addition, the sixth insulator region 126 may be formed to extend so as to be disposed inside the sixth conductor region 146 , or may be formed in one or more lines.

A sixth conductor region 146 formed on the first side 11 , the second side 12 , the third side 13 , and the fourth side 14 , and a sixth insulator region formed on the first side 11 ( 126) may form an outer wall.

The fifth conductor region 145 of the fifth layer 5 and the sixth conductor region 146 of the sixth layer 6 in contact with each other may be bonded to each other to be electrically connected to each other. The fifth insulator region 125 of the fifth layer 5 and the sixth insulator region 126 of the sixth layer 6 in contact with each other may be bonded to each other by sintering or the like.

Referring to FIG. 12 , a seventh layer 7 is formed. A seventh layer 7 may be formed by forming the seventh insulator region 127 and the seventh conductor region 147 .

In the first side surface 11 , the seventh conductor region 147 may be formed to extend to a partial region of the outermost portion, and may be formed in one or more lines. In addition, the seventh insulator region 127 may be formed in some other outermost region, and may be formed in one or more lines. In addition, the seventh insulator region 127 may be formed to extend so as to be disposed inside the seventh conductor region 147 , or may be formed in one or more lines.

In the second side surface 12 , the seventh conductor region 147 may be formed to extend to a partial region of the outermost portion, and may be formed in one or more lines. The seventh conductor regions 147 may be spaced apart and disposed on both sides in a separated state. A seventh insulator region 127 may be disposed in some other outermost region to isolate the seventh conductor region 147 , and a seventh insulator region 127 is formed inside the seventh conductor region 147 . To be arranged, it may be formed to extend, and may be formed from one or more lines.

On the third side surface 13 , the seventh insulator region 127 may be formed to extend outwardly, and may be formed in one or more lines.

On the fourth side surface 14 , the seventh insulator region 127 may be formed to extend outwardly, and may be formed by one or more lines.

A seventh conductor region 147 formed on the first side 11 and a seventh insulator region 147 formed on the first side 11 , the second side 12 , the third side 13 and the fourth side 14 ( 127) may form an outer wall.

The sixth conductor region 146 of the sixth layer 6 and the seventh conductor region 147 of the seventh layer 7 in contact with each other may be bonded to each other to be electrically connected to each other. The sixth insulator region 126 of the sixth layer 6 and the seventh insulator region 127 of the seventh layer 7 in contact with each other may be bonded to each other by sintering or the like.

Referring to FIG. 13 , an eighth layer 8 is formed. An eighth layer 8 may be formed by forming the eighth insulator region 128 and the eighth conductor region 148 .

In the first side 11 , the eighth conductor region 148 may be formed to extend outwardly, and may be formed by one or more lines. In addition, the eighth insulator region 128 may be formed to extend so as to be disposed inside the eighth conductor region 148 , or may be formed in one or more lines.

In the second side surface 12 , the eighth conductor region 148 may be formed to extend to the outermost portion of the region, and may be formed by one or more lines. The eighth conductor regions 148 may be spaced apart and disposed on both sides in a separated state. An eighth insulator region 128 may be disposed in some other outermost region to isolate the eighth conductor region 148 , and an eighth insulator region 128 may be disposed inside the eighth conductor region 148 . To be arranged, it may be formed to extend, and may be formed from one or more lines. In addition, the eighth conductor region 148 may be formed to extend to be disposed in a partial region of the inside of the eighth insulator region 128 . Also, the eighth insulator region 128 may be formed to extend to be disposed inside the eighth conductor region 148 . That is, the eighth conductor region 148 and the eighth insulator region 128 may be alternately disposed.

On the third side surface 13 , the eighth conductor region 148 may be formed to extend outwardly, and may be formed by one or more lines. In addition, the eighth insulator region 128 may be formed to extend so as to be disposed inside the eighth conductor region 148 , or may be formed in one or more lines.

On the fourth side 14 , the eighth conductor region 148 may be formed to extend outwardly, and may be formed by one or more lines. In addition, the eighth insulator region 128 may be formed to extend so as to be disposed inside the eighth conductor region 148 , or may be formed in one or more lines.

An eighth conductor region 148 formed on the first side 11 , the second side 12 , the third side 13 , and the fourth side 14 , and an eighth insulator region formed on the second side 12 ( 128) may form an outer wall.

The seventh conductor region 147 of the seventh layer 7 and the eighth conductor region 148 of the eighth layer 8 in contact with each other may be bonded to each other to be electrically connected to each other. The seventh insulator region 127 of the seventh layer 7 and the eighth insulator region 128 of the eighth layer 8 in contact with each other may be bonded to each other by sintering or the like.

Referring to FIG. 14 , a ninth layer 9 is formed. The ninth layer 9 may be formed by forming the ninth insulator region 129 and the ninth conductor region 149 .

In the first side surface 11 , the ninth insulator region 129 may be formed to extend outwardly, and may be formed in one or more lines.

In the second side surface 12 , the ninth conductor region 149 may be formed to extend to an outermost partial region, and may be formed in one or more lines. The ninth conductive regions 149 may be spaced apart and disposed on both sides in a separated state. A ninth insulator region 129 may be disposed in some other outermost region to isolate the ninth conductor region 149 , and the ninth insulator region 129 may be disposed inside the ninth conductor region 149 . To be arranged, it may be formed to extend, and may be formed from one or more lines. In addition, the ninth conductor region 149 may be formed to extend to be disposed in a partial region inside the ninth insulator region 129 . In addition, the ninth insulator region 129 may extend to be disposed inside the eighth conductor region 149 . That is, the eighth conductor region 149 and the eighth insulator region 129 may be alternately disposed.

In the third side surface 13 , the ninth insulator region 129 may be formed to extend outwardly, and may be formed in one or more lines.

On the fourth side surface 14 , the ninth insulator region 129 may be formed to extend outwardly, and may be formed by one or more lines.

A ninth conductor region 149 formed on the second side 12 and a ninth insulator region 149 formed on the first side 11 , the second side 12 , the third side 13 and the fourth side 14 ( 129) may form an outer wall.

The eighth conductor region 148 of the eighth layer 8 and the ninth conductor region 149 of the ninth layer 9 in contact with each other may be bonded to each other to be electrically connected to each other. The eighth insulator region 128 of the eighth layer 8 and the ninth insulator region 129 of the ninth layer 9 in contact with each other may be bonded to each other by sintering or the like.

Referring to FIG. 15 , a tenth layer 10 is formed. The tenth insulator region 130 and the tenth conductor region 150 may be formed to form the tenth layer 10 .

In the first side surface 11 , the tenth conductor region 150 may be formed to extend outwardly, and may be formed by one or more lines. In addition, the tenth insulator region 130 may be formed to extend so as to be disposed inside the tenth conductor region 150 , or may be formed in one or more lines.

In the second side surface 12 , the tenth conductor region 150 may be formed to extend to an outermost partial region, and may be formed in one or more lines. The tenth conductor regions 150 may be spaced apart and disposed on both sides in a separated state. The tenth insulator region 130 may be disposed in some other outermost region to separate the tenth conductor region 150 , and the tenth insulator region 130 is formed inside the tenth conductor region 150 . To be arranged, it may be formed to extend, and may be formed from one or more lines. Also, the tenth conductor region 150 may be formed to extend to be disposed inside the tenth insulator region 130 . Also, the tenth insulator region 130 may extend to be disposed inside the tenth conductor region 150 . That is, the tenth conductor region 150 and the tenth insulator region 130 may be alternately disposed.

In the third side surface 13 , the tenth insulator region 130 is formed in a partial region of the outermost portion, and may be formed of one or more lines. In addition, the tenth conductor region 150 may be formed in some other outermost region, and may be formed in one or more lines. The tenth insulator region 130 may be formed to extend so as to be disposed inside the tenth conductor region 150 , or may be formed in one or more lines.

In the fourth side 14 , the tenth conductor region 150 may be formed to extend outwardly, and may be formed by one or more lines. In addition, the tenth insulator region 130 may be formed to extend so as to be disposed inside the tenth conductor region 150 , or may be formed in one or more lines.

A tenth conductor region 150 formed on the first side 11 , the second side 12 , the third side 13 , and the fourth side 14 , the second side 12 , and the third side 13 ) formed in the tenth insulator region 130 may form an outer wall.

The ninth conductor region 149 of the ninth layer 9 and the tenth conductor region 150 of the tenth layer 10 contacting each other may be bonded to each other to be electrically connected to each other. The ninth insulator region 129 of the ninth layer 9 and the tenth insulator region 130 of the tenth layer 10 in contact with each other may be bonded to each other by sintering or the like.

Referring to FIG. 16 , an eleventh layer 11 is formed. An eleventh layer 11 may be formed by forming the eleventh insulator region 131 and the eleventh conductor region 151 .

In the first side surface 11 , the eleventh insulator region 131 may be formed to extend outwardly, and may be formed in one or more lines.

In the second side surface 12 , the eleventh conductor region 151 may be formed to extend to an outermost partial region, and may be formed in one or more lines. The eleventh conductive regions 151 may be spaced apart and disposed on both sides in a separated state. The eleventh insulator region 131 may be disposed in some other outermost region to separate the eleventh conductor region 151 , and the eleventh insulator region 131 is disposed inside the eleventh conductor region 151 . To be arranged, it may be formed to extend, and may be formed from one or more lines.

In the third side surface 13 , the eleventh insulator region 131 is formed in the outermost partial region and may be formed of one or more lines. In addition, the eleventh conductor region 151 may be formed in some other outermost region, and may be formed in one or more lines. The eleventh insulator region 131 may extend to be disposed inside the eleventh conductor region 151 , or may be formed in one or more lines.

On the fourth side surface 14 , the eleventh insulator region 131 may be formed to extend outwardly, and may be formed by one or more lines.

An eleventh conductor region 151 formed on the second side 12 and the third side 13 and the first side 11 , the second side 12 , the third side 13 and the fourth side 14 . ) formed in the eleventh insulator region 131 may form an outer wall.

The tenth conductor region 150 of the tenth layer 10 and the eleventh conductor region 151 of the eleventh layer 11 in contact with each other may be bonded to each other to be electrically connected to each other. The tenth insulator region 130 of the tenth layer 10 and the eleventh insulator region 131 of the eleventh layer 11 in contact with each other may be bonded to each other by sintering or the like.

Referring to FIG. 17 , a twelfth layer 12 is formed. The twelfth layer 12 may be formed by forming the twelfth insulator region 132 and the twelfth conductor region 152 .

In the first side surface 11 , the twelfth conductor region 152 may be formed to extend outwardly, and may be formed by one or more lines. In addition, the twelfth insulator region 132 may be formed to extend so as to be disposed inside the twelfth conductor region 152 , or may be formed in one or more lines.

In the second side surface 12 , the twelfth conductor region 152 may be formed to extend to an outermost partial region, and may be formed in one or more lines. The twelfth conductor regions 152 may be spaced apart and disposed on both sides in a separated state. The twelfth insulator region 132 may be disposed in some other outermost region to separate the twelfth conductor region 152 , and the twelfth insulator region 132 is formed inside the twelfth conductor region 152 . To be arranged, it may be formed to extend, and may be formed from one or more lines. Also, the twelfth conductor region 152 may extend to be disposed inside the twelfth insulator region 132 . In addition, the twelfth insulator region 132 may extend to be disposed inside the twelfth conductor region 152 . That is, the twelfth conductor region 152 and the twelfth insulator region 132 may be alternately disposed.

In the third side surface 13 , the twelfth conductor region 152 may be formed to extend outwardly, and may be formed by one or more lines. In addition, the twelfth insulator region 132 may be formed to extend so as to be disposed inside the twelfth conductor region 152 , or may be formed in one or more lines.

In the fourth side surface 14 , the twelfth insulator region 132 is formed in the outermost partial region, and may be formed of one or more lines. In addition, the twelfth conductor region 152 may be formed in some other outermost region, and may be formed in one or more lines. The twelfth insulator region 132 may be formed to extend so as to be disposed inside the twelfth conductor region 152 , and may be formed in one or more lines.

A twelfth conductor region 152 formed on the first side 11 , the second side 12 , the third side 13 and the fourth side 14 , and the second side 12 and the fourth side 14 . The twelfth insulator region 132 formed in the junction may form an outer wall.

The eleventh conductor region 151 of the eleventh layer 11 and the twelfth conductor region 152 of the twelfth layer 12 in contact with each other may be bonded to each other to be electrically connected to each other. The eleventh insulator region 131 of the eleventh layer 11 and the twelfth insulator region 132 of the twelfth layer 12 in contact with each other may be bonded to each other by sintering or the like.

Referring to FIG. 18 , a thirteenth layer 13 is formed. A thirteenth layer 13 may be formed by forming the thirteenth insulator region 133 and the thirteenth conductor region 153 .

In the first side surface 11 , the thirteenth insulator region 133 may be formed to extend outwardly, and may be formed by one or more lines.

In the second side surface 12 , the thirteenth conductor region 153 may be formed to extend to an outermost partial region, and may be formed in one or more lines. In addition, the thirteenth insulator region 133 may be formed in another partial region of the outermost portion, and may be formed of one or more lines. In addition, the thirteenth insulator region 133 may be formed to extend so as to be disposed inside the thirteenth conductor region 153 , or may be formed in one or more lines.

In the third side surface 13 , the thirteenth insulator region 133 may be formed to extend outwardly, and may be formed by one or more lines.

In the fourth side surface 14 , a thirteenth insulator region 133 is formed in an outermost partial region, and may be formed of one or more lines. In addition, the thirteenth conductor region 153 may be formed in another partial region of the outermost portion, and may be formed of one or more lines. The thirteenth insulator region 133 may be formed to extend so as to be disposed inside the thirteenth conductor region 153 , or may be formed in one or more lines.

A thirteenth conductor region 153 formed on the second side 12 , and the fourth side 14 , and the first side 11 , the second side 12 , the third side 13 , and the fourth side 14 . ) formed in the thirteenth insulator region 133 may form an outer wall.

The twelfth conductor region 152 of the twelfth layer 12 and the thirteenth conductor region 153 of the thirteenth layer 13 contacting each other may be bonded to each other to be electrically connected to each other. The twelfth insulator region 132 of the twelfth layer 12 and the thirteenth insulator region 133 of the thirteenth layer 13 in contact with each other may be bonded to each other by sintering or the like.

Referring to FIG. 19 , a fourteenth layer 14 is formed. A fourteenth layer 14 may be formed by forming the fourteenth insulator region 134 and the fourteenth conductor region 154 .

In the first side surface 11 , a fourteenth insulator region 134 may be formed to extend outwardly, and may be formed by one or more lines.

On the second side 12 , a fourteenth conductor region 154 may be formed to extend outwardly, and may be formed by one or more lines. In addition, the fourteenth insulator region 134 may be formed to extend so as to be disposed inside the fourteenth conductor region 154 , or may be formed in one or more lines.

On the third side surface 13 , a fourteenth conductor region 154 may be formed to extend outwardly, and may be formed by one or more lines. In addition, the fourteenth insulator region 134 may be formed to extend so as to be disposed inside the fourteenth conductor region 154 , or may be formed in one or more lines.

On the fourth side surface 14 , a fourteenth conductor region 154 may be formed to extend outwardly, and may be formed by one or more lines. In addition, the fourteenth insulator region 134 may be formed to extend so as to be disposed inside the fourteenth conductor region 154 , or may be formed in one or more lines.

A fourteenth conductor region 154 formed on the second side 12 , the third side 13 , and the fourth side 14 , and a fourteenth insulator region 134 formed on the first side 11 form an outer wall. can do.

The thirteenth conductor region 153 of the thirteenth layer 13 and the fourteenth conductor region 154 of the fourteenth layer 14 contacting each other may be bonded to each other to be electrically connected to each other. The thirteenth insulator region 133 of the thirteenth layer 13 and the fourteenth insulator region 134 of the fourteenth layer 14 in contact with each other may be bonded to each other by sintering or the like.

Referring to FIG. 20 , a fifteenth layer 15 is formed. A fifteenth layer 15 may be formed by forming the fifteenth insulator region 135 and the fifteenth conductor region 155 .

In the first side surface 11 , the fifteenth insulator region 135 may be formed to extend outwardly, and may be formed in one or more lines.

In the second side surface 12 , a fifteenth insulator region 135 may be formed to extend outwardly, and may be formed in one or more lines. In addition, the fifteenth conductor region 155 may be formed to extend so as to be disposed inside the fifteenth insulator region 135 , or may be formed in one or more lines.

On the third side surface 13 , a fifteenth insulator region 135 may be formed to extend outwardly, and may be formed in one or more lines.

On the fourth side surface 14 , a fifteenth insulator region 135 may be formed to extend outwardly, and may be formed by one or more lines.

A fifteenth insulator region 135 formed on the first side surface 11 , the second side surface 12 , the third side surface 13 , and the fourth side surface 14 may form an outer wall.

The fourteenth conductor region 154 of the fourteenth layer 14 and the fifteenth conductor region 155 of the fifteenth layer 15 contacting each other may be bonded to each other to be electrically connected to each other. The fourteenth insulator region 134 of the first layer 14 and the fifteenth insulator region 135 of the fifteenth layer 15 in contact with each other may be bonded to each other by sintering or the like.

Referring to FIG. 21 , a sixteenth layer 16 is formed. The sixteenth insulator region 136 and the sixteenth conductor region 156 may be formed to form the sixteenth layer 16 .

In the first side surface 11 , the sixteenth insulator region 136 may be formed to extend outwardly, and may be formed in one or more lines. In addition, the sixteenth conductor region 156 may be formed to extend so as to be disposed inside the sixteenth insulator region 136 , or may be formed in one or more lines.

In the second side surface 12 , a sixteenth insulator region 136 may be formed to extend outwardly, and may be formed by one or more lines. In addition, the sixteenth conductor region 156 may be formed to extend so as to be disposed inside the sixteenth insulator region 136 , or may be formed in one or more lines.

On the third side surface 14 , a sixteenth insulator region 136 may be formed to extend outwardly, and may be formed by one or more lines. In addition, the sixteenth conductor region 156 may be formed to extend so as to be disposed inside the sixteenth insulator region 136 , or may be formed in one or more lines.

On the fourth side surface 14 , the sixteenth insulator region 136 may be formed to extend outwardly, and may be formed by one or more lines. In addition, the sixteenth conductor region 156 may be formed to extend so as to be disposed inside the sixteenth insulator region 136 , or may be formed in one or more lines.

A sixteenth insulator region 136 formed on the first side 11 , the second side 12 , the third side 13 , and the fourth side 14 may form an outer wall.

The fifteenth conductor region 155 of the fifteenth layer 15 and the sixteenth conductor region 156 of the sixteenth layer 16 contacting each other may be bonded to each other to be electrically connected to each other. The fifteenth insulator region 135 of the first layer 15 and the sixteenth insulator region 136 of the sixteenth layer 15 in contact with each other may be bonded to each other by sintering or the like.

The first conductor region 141 formed in the first layer 1 and the second conductor region 142 formed in the second layer 2 may constitute a lower electrode.

In the biodegradable electronic drug 100, a diode among the electronic devices may be configured as follows.

The first conductor region 141 formed in the first layer 1 , the semiconductor region 152 formed in the second layer 1 , and the third conductor region 143 formed in the third layer 3 are vertically aligned can be, and thus a diode can be configured.

In the biodegradable electronic drug 100, a capacitor among the electronic devices may be configured as follows.

The fourth conductor region 144 formed in the fourth layer 4, the fifth insulator region 125 formed in the fifth layer 5, and the sixth conductor region 146 formed in the sixth layer 6 are It can be vertically aligned on the two sides 12 , thereby constituting a capacitor.

A sixth conductor region 146 formed in the sixth layer 6 , a seventh insulator region 127 formed in the seventh layer 7 , and an eighth conductor region 148 formed in the eighth layer 8 are It can be vertically aligned on the two sides 12 , thereby constituting a capacitor.

The eighth conductor region 148 formed in the eighth layer 8, the ninth insulator region 129 formed in the ninth layer 9, and the tenth conductor region 148 formed in the tenth layer 10 are It can be vertically aligned on the two sides 12 , thereby constituting a capacitor.

The tenth conductor region 150 formed on the tenth layer 10, the eleventh insulator region 131 formed on the eleventh layer 11, and the twelfth conductor region 152 formed on the twelfth layer 12 are It can be vertically aligned on the two sides 12 , thereby constituting a capacitor.

A twelfth conductor region 152 formed on the twelfth layer 12 , a thirteenth insulator region 133 formed on the thirteenth layer 13 , and a fourteenth conductor region 154 formed on the fourteenth layer 14 are It can be vertically aligned on the two sides 12 , thereby constituting a capacitor.

The capacitors may be disposed to cross each other and engage with each other.

The fourth conductor region 144 , the eighth conductor region 148 , and the twelfth conductor region 152 may be electrically connected. For example, fourth conductor region 144 and eighth conductor region 148 may be electrically connected through fifth conductor region 145 , another portion of sixth conductor region 146 , and seventh conductor region 147 . can be connected to The eighth conductor region 148 and the twelfth conductor region 152 may be electrically connected through the ninth conductor region 149 , another portion of the tenth conductor region 150 , and the eleventh conductor region 151 . .

The sixth conductor region 146 , the tenth conductor region 150 , and the fourteenth conductor region 154 may be electrically connected. For example, the sixth conductor region 146 and the tenth conductor region 150 may be electrically connected through the seventh conductor region 147 , another portion of the eighth conductor region 148 , and the ninth conductor region 149 . can be connected to The tenth conductor region 150 and the fourteenth conductor region 154 may be electrically connected through the eleventh conductor region 151 , another portion of the twelfth conductor region 152 , and the thirteenth conductor region 153 . .

In the biodegradable electronic drug 100, an inductor among the electronic devices may be configured as follows.

The fourth to fourteenth conductor regions 144 to 154 formed in the fourth to fourteenth layers 4-14 are vertically aligned and arranged to wind the through hollow provided therein in the same direction, and are vertically aligned. It is possible to configure an extended inductor with

The fifteenth conductor region 155 formed in the fifteenth layer 15 and the sixteenth conductor region 156 formed in the sixteenth layer 16 may constitute an upper electrode.

The lower electrode and the upper electrode may function as the first wiring 108 and the second wiring 109 of FIG. 3 and may contact the treatment target nerve cell NC.

The first layer 1 to the sixteenth layer 16 may each consist of one layer or each of a plurality of layers.

Then, the plurality of layers may be combined using at least one of heat treatment, light irradiation treatment, chemical treatment, and electrochemical treatment to form the biodegradable electronic drug 100 . For example, the insulator region and the semiconductor region may be joined by a sintering method, and the conductor region may be joined by a fusion method or an alloying method.

When describing the electrochemical treatment, the conductor region may be composed of a conductive material filler and a surface oxide layer, and the surface oxide layer is reduced and decomposed by an oxidation-reduction reaction of an acid catalyst, and the conductive material filler is combined to conduct conduction. A bonding method to form a network may be achieved. The coupling method may also be applied to the semiconductor region.

At least one of the above-described conductor regions, insulator regions, and semiconductor region may include a biodegradable metal material. The biodegradability means a substance that can be absorbed in the human body and is harmless after absorption. The conductor regions are, for example, magnesium (Mg), iron (Fe), zinc (Zn), molybdenum (Mo), tungsten (W), calcium (Ca), potassium (K), sodium (Na), silicon ( Si), a-IGZO, germanium (Ge), or an alloy thereof may be included. The insulator regions are, for example, magnesium (Mg), iron (Fe), zinc (Zn), molybdenum (Mo), tungsten (W), calcium (Ca), potassium (K), sodium (Na), silicon ( Si), a-IGZO, germanium (Ge), or oxides thereof may be included. The semiconductor region may include a material in which a conductive material is doped into a material constituting the insulator region. For example, the semiconductor region may include zinc oxide doped with aluminum.

The biodegradable electronic drug according to an embodiment of the present invention may be formed by a three-dimensional printing method.

22 is a schematic diagram illustrating a three-dimensional printing apparatus 900 for performing a method for manufacturing a biodegradable electronic drug according to an embodiment of the present invention.

Referring to FIG. 22 , the 3D printing apparatus 900 includes a spinning liquid tank 910 , a spinning nozzle 920 , a spinning nozzle tip 930 , and a collector 950 .

The 3D printing apparatus 900 is a method of directly forming and stacking the spinning solution 960 in a direct ink writing (DIW) method. In the direct ink writing method, when a spinning solution 960 such as ink or paste is pushed out using a screw, a piston, or pressure, the spinning solution 960 is discharged to the outside through the spinning nozzle 920 . The discharged spinning solution 960 is then solidified on the collector 950 . Once a layer of one layer is solidified, the layers of another layer can then be stacked and solidified to form a three-dimensional structure. At this time, as a method of solidifying, it may be by an external stimulus, such as a reaction with ultraviolet rays or CaCl ₂ , or by a characteristic of the spinning solution 960 itself, for example, rapid evaporation of a solvent on the surface or formation of an oxide layer. The biodegradable electronic drug according to an embodiment of the present invention pushes the spinning solution 960 with pressure and may use a solidification method using its own characteristics of the spinning solution 960 . However, this is exemplary and the technical spirit of the present invention is not limited thereto.

The spinning liquid tank 910 may store the spinning liquid 960 . The spinning solution tank 910 may provide the spinning solution 960 to the spinning nozzle 920 by pressurizing the spinning solution 960 using a built-in pump (not shown). The spinning nozzle 920 may receive the spinning solution 960 from the spinning solution tank 910 and radiate the spinning solution 960 through the spinning nozzle tip 930 located at one end. Spinning nozzle tip 930 After the spinning solution 960 is pressurized by the pump to fill the nozzle tube inside, the spinning solution 960 can be radiated by the voltage applied by the power source 940. The collector 950 has a spinning nozzle. It is located on the lower side of the 920 and accommodates the spinning solution 960 to be spun.

The positional relationship between the collector 950 and the spinning nozzle 920 is exemplary, and the technical spirit of the present invention is not limited thereto. For example, a case in which the collector 950 is located above the spinning nozzle 920 and the spinning liquid 960 radiated from the spinning nozzle 920 is radiated upward is also included in the technical concept of the present invention. For example, a case in which the collector 950 is horizontally positioned with respect to the spinning nozzle 920 and the spinning liquid 960 radiated from the spinning nozzle 920 is radiated in the horizontal direction is also included in the technical concept of the present invention. The collector 950 may be positioned horizontally with the spinneret 920 or may be on the same spatial axis.

Conditions for three-dimensional printing of the spinning solution 960 in a pneumatic manner are as follows. The spinning solution 960 must be discharged in the form of a filament through the spinning nozzle 920 . In addition, the layer formed of the spinning solution 960 should be easily laminated. When the shear stress applied to the spinning solution 960 is increased, the shear modulus of the spinning solution 960 is maintained and then there must be a viscoelastic property that is decreased. As the shear rate of the spinning solution 960 increases, the viscosity of the spinning solution 960 should have a shear thinning characteristic.

The spinning solution 960 may change according to a material for which spinning is desired, and may include, for example, materials constituting the above-described conductor region, insulator region, and semiconductor region, respectively. The spinning solution 960 may form ink or paste by mixing a polymer and conductive particles. Accordingly, the conductivity of the conductor region may be reduced compared to the case in which only the pure conductor is formed. Accordingly, in order to increase the conductivity of the conductor region, a conductive network of conductive particles included in the conductor region may be formed through sintering using light irradiation, heating, or chemical reaction. For example, in the present invention, a method of sintering through an electrochemical method may be used. For example, after the oxide film formed on the surface of the conductive particles is removed using an acid, the ionized conductive atoms are reduced again, and then a conductive network between the conductive particles may be formed.

Each of the layers formed by radiation from the 3D printing device are stacked. In all cases, it can be seen that the formation and lamination of the layers are easy.

23 is a photograph showing a laminated structure formed by using a 3D printing apparatus for performing a method for manufacturing a biodegradable electronic drug according to an embodiment of the present invention.

Referring to FIG. 23 , (a) is a stacked structure of zinc (Zn) that can constitute a conductor region of a biodegradable electronic drug, and (b) is a structure of aluminum-doped zinc oxide (AZO) that can constitute a semiconductor region It is a laminated structure, and (c) is a laminated structure _of silicon oxide/magnesium oxide (SiO2/MgO) which can constitute an insulator region. The stacked structures are formed by stacking the layers of each layer formed by radiating from the 3D printing apparatus. In all cases, it can be confirmed that the formation of the laminated structure is easy, and there is a possibility of freely changing the shape. For reference, the interior photos exemplarily show the layer formed by radiating from the 3D printing apparatus for each case.

24 is a photograph showing a biodegradable electronic drug formed by using a 3D printing apparatus for performing a method for manufacturing a biodegradable electronic drug according to an embodiment of the present invention.

Referring to FIG. 24 , zinc (Zn) constituting a conductor region, aluminum doped zinc oxide (AZO) constituting a semiconductor region, and silicon oxide (SiO ₂ ) or silicon oxide constituting an insulator region The stacked biodegradable electronic drugs including /magnesium oxide (SiO ₂ /MgO) and the like are shown. In the biodegradable electronic drugs, it can be confirmed that, according to the manufacturing method of the present invention, a stack of materials having different properties of a conductor, a semiconductor, and an insulator is easily formed. It was confirmed that the size of the biodegradable electronic drug can be formed in various sizes in the range of 5 mm to 15 mm in diameter. However, these sizes are exemplary, and the technical spirit of the present invention is not limited thereto.

The biodegradable electronic drug according to the technical idea of the present invention can form an electrical circuit as a biodegradable conductive, semiconducting, and dielectric paste through 3D printing in the medical industry, and embed it therein. Accordingly, it is possible to actively control a structure that can only be controlled passively by adding electronic functionalities such as wireless communication and electrical stimulation to the simple structure. For example, an implantable biodegradable electronic drug with a built-in circuit and electrode that can give wireless electrical stimulation accelerates the healing and regeneration of cells in vivo, or forms a pressure sensor or a tension sensor in the biodegradable electronic drug This can open up a new field of monitoring the pressure or stress applied while being inserted into the body. In addition, the biodegradable electronic drug may be applied to biotechnology such as food and agriculture. Specifically, the biodegradable electronic drug is an implantable medical device that accelerates the regeneration of peripheral nerves using a biodegradable electric stimulator tailored to the body structure, and accelerates differentiation through electrical stimulation by putting stem cells in a biodegradable scaffold with built-in electrodes. can be done

In addition, the method for forming a biodegradable electronic drug according to the technical idea of the present invention, specifically, a three-dimensional stacking method using a three-dimensional printer, etc., is applied to food smart packaging, and is a sensor for measuring internal humidity, temperature, and impact of fruit packaging. etc. can be used. In addition, biodegradable electronic drugs can be applied to smart farms and used as soil pH, moisture, temperature sensors and air temperature, humidity, fine dust sensors, etc.

The technical spirit of the present invention described above is not limited to the above-described embodiments and the accompanying drawings, and it is the technical spirit of the present invention that various substitutions, modifications and changes are possible within the scope without departing from the technical spirit of the present invention. It will be apparent to those of ordinary skill in the art to which this belongs.

Claims (20)

a plurality of stacked material layers including at least one of an insulator region, a conductor region, and a semiconductor region;
one or more electronic devices configured by a combination of the plurality of material layers; and
Containing;
Biodegradable electronic drug. The method of claim 1,
wherein the electronic devices are configured across a plurality of layers of the material in a vertical direction;
Biodegradable electronic drug. The method of claim 1,
The electronic devices include at least one of a diode, a capacitor, and an inductor, a resistor, a transistor, an electrode, a rectifying device, a switching device, a memory device, a power storage device, and a vibration device,
Biodegradable electronic drug. The method of claim 1,
The material layers are
a first layer comprising a first conductive region;
a second layer comprising a semiconductor region; and
a third layer including a second conductive region; and
The first layer, the second layer, and the third layer are sequentially stacked,
the first conductor region, the semiconductor region, and the second conductor region are vertically aligned to constitute a diode as the electronic device,
Biodegradable electronic drug. The method of claim 1,
The material layers are
a first layer comprising a first conductive region;
a second layer comprising an insulator region; and
a second layer comprising a second conductive region; and
The first layer, the second layer, and the third layer are sequentially stacked,
the first conductor region, the insulator region, and the second conductor region are vertically aligned to constitute the capacitor as the electronic device;
Biodegradable electronic drug. The method of claim 1,
The material layers are
a first layer comprising a first conductive region;
a second layer comprising a first insulator region;
a third layer comprising a second conductive region;
a fourth layer comprising a second insulator region;
a fifth layer comprising a third conductor region;
a sixth layer comprising a third insulator region;
a seventh layer including a fourth conductor region; and
The first to seventh layers are sequentially stacked,
the first conductor region and the third conductor region are electrically connected;
the second conductor region and the fourth conductor region are electrically connected;
the first conductor region, the first insulator region, and the second conductor region are vertically aligned to constitute the first capacitor;
the second conductor region, the second insulator region, and the third conductor region are vertically aligned to constitute the second capacitor;
wherein the third conductor region, the third insulator region, and the fourth conductor region are vertically aligned to constitute the third capacitor;
Biodegradable electronic drug. 7. The method of claim 6,
wherein the first capacitor and the second capacitor or the second capacitor and the third capacitor are arranged to cross each other and engage;
Biodegradable electronic drug. The method of claim 1,
The material layers are
a first layer including a first conductor region and a first insulator region disposed so that both ends of the first conductor region are not connected;
a second layer comprising a second conductor region in contact with an end of the first conductor region and a second insulator region disposed to cover and insulate the remainder of the first conductor region; and
a third layer including a third conductor region in contact with the second conductor region at an end thereof and a third insulator region disposed so that both ends of the first conductor region are not connected;
The first layer, the second layer, and the third layer are sequentially stacked,
The first conductor region, the second conductor region, and the third conductor region are vertically arranged to constitute the inductor as the electronic device,
Biodegradable electronic drug. 9. The method of claim 8,
The first conductor region, the second conductor region, and the third conductor region are arranged to wind the through hollow portion in the same direction,
Biodegradable electronic drug. The method of claim 1,
The electronic devices include a diode, a capacitor, and an inductor,
The capacitor and the inductor are connected in parallel, connected in series with the diode,
Biodegradable electronic drug. 11. The method of claim 10,
wherein the capacitor and the inductor are insulated from each other by an insulator region formed in the plurality of material layers;
Biodegradable electronic drug. 11. The method of claim 10,
Further comprising an upper electrode electrically connecting the uppermost side of the capacitor and the uppermost side of the inductor,
Biodegradable electronic drug. 11. The method of claim 10,
Further comprising a lower electrode electrically connecting the lowermost side of the diode,
Biodegradable electronic drug. The method of claim 1,
At least one of the insulator region, the conductor region, and the semiconductor region comprises a biodegradable metal material,
Biodegradable electronic drug. The method of claim 1,
The conductor region includes magnesium (Mg), iron (Fe), zinc (Zn), molybdenum (Mo), tungsten (W), calcium (Ca), potassium (K), sodium (Na), silicon (Si), a-IGZO, including germanium (Ge) or alloys thereof,
Biodegradable electronic drug. providing an electronic circuit comprising one or more electronic circuit elements;
designing a three-dimensional electronic drug design structure based on the electronic circuit;
designing a plurality of design layers by tomographically decomposing the three-dimensional electronic drug design structure;
stacking a plurality of material layers based on the design layers; and
Combining the plurality of material layers to form a biodegradable electronic drug in which electronic elements corresponding to the electronic circuit elements are formed and disposed, respectively;
A method for manufacturing a biodegradable electronic drug. 17. The method of claim 16,
The biodegradable electronic drug includes a through hollow part into which nerve cells are inserted in the center of the plurality of material layers,
A method for manufacturing a biodegradable electronic drug. 17. The method of claim 16,
The step of stacking the plurality of material layers comprises:
It is performed by discharging at least one material of a conductor, an insulator, and a semiconductor using a three-dimensional printer,
A method for manufacturing a biodegradable electronic drug. 19. The method of claim 18,
The step of stacking the plurality of material layers comprises:
It is performed by discharging at least one material of a conductor, an insulator, and a semiconductor using the 3D printer directly on the material layer formed first to form another material layer,
A method for manufacturing a biodegradable electronic drug. 17. The method of claim 16,
The bonding of the plurality of material layers is performed using at least one of heat treatment, light irradiation treatment, chemical treatment, and electrochemical treatment,
A method for manufacturing a biodegradable electronic drug.

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