KR20210155779A - QLED manufacturing method using selective laser curing and QLED by the same and Manufacturing equipment for the same - Google Patents

Abstract

The present invention provides a QLED manufacturing method for forming a light emitting element of ultra-high resolution using selective laser curing and etching, a QLED thereby, and equipment for manufacturing the QLED. The QLED manufacturing method using selective laser curing comprises the steps of: coating a first light emitting layer on a top surface of a base substrate; irradiating curing laser to a first light emitting element region forming a first light emitting element in the first light emitting layer to selectively cure the first light emitting element; etching the first light emitting layer while irradiating etch laser on a top surface of the first light emitting layer to form a first light emitting element; coating a second light emitting layer on a region including a top surface of a base substrate exposed around the first light emitting element; irradiating curing laser on a second light emitting element region formed therein with the second light emitting element in the second light emitting layer to selectively cure the second light emitting element region; etching the second light emitting layer while irradiating etch laser on a top surface of the second light emitting layer to form a second light emitting element; coating a second light emitting layer on a region including a top surface of a base substrate exposed around the first light emitting element and the second light emitting element; irradiating curing laser on a third light emitting element region formed therein with the third light emitting element in the third light emitting layer to selectively cure the third light emitting element region; and etching the third light emitting layer while irradiating etch laser on a top surface of the third light emitting layer to form a third light emitting element.

Description

QLED manufacturing method using selective laser curing, QLED using same, and manufacturing apparatus for manufacturing the same

The present invention relates to a method for manufacturing a QLED, and to a QLED and an apparatus for manufacturing the same.

Quantum dot light-emitting diodes (QLED) panels are formed by including a light emitting device including quantum dots (quantum dots). The quantum dot light emitting diode includes an R light emitting device, a G light emitting device, and a B light emitting device. The RGB light emitting device can be formed by patterning each layer containing quantum dot particles of different sizes, however, a commercial level patterning technology that can pattern the RGB light emitting layer into a light emitting device This situation has not been developed.

Currently commercialized OLEDs can be patterned using a fine metal mask, but in QLED, it is difficult to use a fine metal mask due to differences in material properties constituting the light emitting layer. As a patterning method for the RGB light emitting layer that has been developed so far, a physical patterning method such as a stamp method, a photoresist method, or an ink-jet printing method is mainly used. However, in this physical patterning method, phenomena such as mask/printer head/nib clogging, stains, barrier rib formation, and pattern downsizing occur, and act as a cause to increase the process defect rate. In addition, since this phenomenon occurs more frequently as the light emitting layer pattern becomes more sophisticated and fine, it acts as a major obstacle to the ultra-high resolution fine patterning technology. In addition, the chemical patterning method is a method using a chemical reaction of the quantum dot material, and utilizes the difference in chemical resistance of the quantum dot. However, the chemical patterning method can secure the uniformity of the patterned ultrafine quantum dot device, but there are many difficulties in the reduction of quantum dot emission characteristics and the limitation of usable quantum dot materials.

An object of the present invention is to provide a QLED manufacturing method for forming an ultra-high-resolution light emitting device using selective laser curing and etching, and a QLED and a manufacturing apparatus for manufacturing the same.

A QLED manufacturing method using selective laser curing according to an embodiment of the present invention includes a first light emitting layer coating step of coating a first light emitting layer on an upper surface of a base substrate, and a first light emitting device forming a first light emitting device in the first light emitting layer A first light emitting device region curing step of selectively curing by irradiating a curing laser to the device region, and a first light emitting device forming a first light emitting device by etching the first light emitting layer while irradiating an etching laser to the upper surface of the first light emitting layer A second light emitting layer coating step of forming a second light emitting layer in a region including the upper surface of the base substrate exposed to the periphery of the first light emitting device and coating a second light emitting layer, and a second light emitting device is formed in the second light emitting layer A second light emitting device region curing step of selectively curing by irradiating the curing laser to the second light emitting device region, and etching the second light emitting layer while irradiating the etching laser to the upper surface of the second light emitting layer to form a second light emitting device A second light emitting device forming step, and a third light emitting layer coating step of coating a third light emitting layer on a region including the upper surface of the base substrate exposed to the periphery of the first light emitting device and the second light emitting device; A third light emitting device region curing step of selectively curing by irradiating the curing laser to the third light emitting device region where the third light emitting device is formed in the light emitting layer, and irradiating the etching laser to the upper surface of the third light emitting layer, the third light emitting layer and a third light emitting device forming step of forming a third light emitting device by etching.

In addition, the QLED manufacturing method using selective laser curing of the present invention may further include a light emitting device etching step of etching the upper surfaces of the first light emitting device and the second light emitting device with an etching laser after the third light emitting device forming step. .

In addition, in the step of etching the light emitting device, the upper surface of the third light emitting device may also be etched with the etching laser.

In addition, the first light emitting layer may be coated to a thickness of 1 to 20% thicker than the thickness of the first light emitting device, and the second light emitting layer may be coated to a thickness of 1 to 20% thicker than the thickness of the second light emitting device.

Also, the first light emitting layer and the second light emitting layer may be formed to have a thickness greater than that of the third light emitting layer.

In addition, the first light emitting layer and the second light emitting layer may be formed to have a thickness of 1 to 20% thicker than that of the third light emitting layer.

In addition, the curing laser may be an ultraviolet laser.

In addition, the first light emitting layer, the second light emitting layer, and the third light emitting layer are formed of a laser photoreactive quantum dot composite material including a quantum dot material, a base material, and a photoinitiator, and the first light emitting layer is the quantum dot material has an emission wavelength range of 570 ~ It is a red quantum dot material of 780 nm, the second light emitting layer is a green quantum dot material in which the quantum dot material has an emission wavelength range of 480 to 570 nm, and the third light emission layer is a blue quantum dot material having an emission wavelength range of 380 to 480 nm, and the base material includes a monomer and an oligomer, and the photoinitiator is an ultraviolet initiator, and may be a benzoin ether or an amine.

In addition, the etching laser may be a visible laser or an infrared laser.

In addition, the first light emitting layer, the second light emitting layer, and the third light emitting layer may further include a light absorbing material absorbing light of a visible light wavelength band or a light absorbing material absorbing light of an infrared wavelength band.

In addition, the etching laser may be irradiated as a whole to the first emission layer, the second emission layer, or the third emission layer.

In addition, the etch laser includes a first light emitting layer in an uncured region except for a region where the first light emitting device is formed, or a second light emitting layer or the third light emitting layer in an uncured region except for a region in which the second light emitting device is formed. It may be irradiated to the third light emitting layer in the uncured region except for the region where the device is formed.

In addition, the first light emitting device forming step, the second light emitting device forming step, and the third light emitting device forming step may be performed while cooling the base substrate or spraying a cooling gas to the upper portion of the light emitting layer.

In addition, the first light emitting device forming step, the second light emitting device forming step, and the third light emitting device forming step may be performed while blowing an inert gas into the region to which the etching laser is irradiated.

In addition, the QLED of the present invention can be manufactured by the above method.

In addition, the QLED manufacturing apparatus of the present invention is a manufacturing apparatus for applying the QLED manufacturing method as described above, and a quantum dot material coating module for coating a quantum dot material on the base substrate, and a substrate support for seating the base substrate. and a substrate cooling module for cooling the base substrate to a required temperature, a laser irradiation module for irradiating the curing laser and the etching laser, and a gas blowing module for blowing an inert gas into the area to which the curing laser and the etching laser are irradiated. can

The QLED manufacturing method using selective laser curing according to an embodiment of the present invention and the QLED and the manufacturing apparatus for the same according to an embodiment of the present invention use selective laser curing and laser etching to form a QLED including an RGB light emitting device more precisely. can

In addition, since the present invention directly forms the RGB light emitting device on the substrate, it is possible to form the RGB light emitting device for the ultra-high-resolution QLED panel without using an additional device such as a fine metal mask or transfer equipment.

In addition, since the present invention does not use the fine metal mask, it is possible to reduce the increase in process time due to cleaning of residual organic matter of the fine metal mask or increase in cost due to the increase in replacement time and replacement cost due to deformation and damage of the fine metal mask. .

In addition, the present invention can form an ultra-high-resolution QLED panel compared to the conventional method.

1 is a flowchart of a QLED manufacturing method using selective laser curing according to an embodiment of the present invention.
2 is a process diagram for the first light emitting layer coating step of the QLED manufacturing method using selective laser curing according to an embodiment of the present invention.
3 is a process diagram of a first light emitting device region selective curing step of a QLED manufacturing method using selective laser curing according to an embodiment of the present invention.
4 is a process diagram of a first light emitting device forming step of a QLED manufacturing method using selective laser curing according to an embodiment of the present invention.
5 is a process diagram for the second light emitting layer coating step of the QLED manufacturing method using selective laser curing according to an embodiment of the present invention.
6 is a process diagram of a second light emitting device region selective curing step of the QLED manufacturing method using selective laser curing according to an embodiment of the present invention.
7 is a process diagram of a second light emitting device forming step of a QLED manufacturing method using selective laser curing according to an embodiment of the present invention.
8 is a process diagram for the third light emitting layer coating step of the QLED manufacturing method using selective laser curing according to an embodiment of the present invention.
9 is a process diagram of a third light emitting device region selective curing step of the QLED manufacturing method using selective laser curing according to an embodiment of the present invention.
10 is a process diagram of a third light emitting device forming step of a QLED manufacturing method using selective laser curing according to an embodiment of the present invention.
11 is a process diagram of a light emitting device etching step of a QLED manufacturing method using selective laser curing according to an embodiment of the present invention.
12 is a partial perspective view of a QLED by a QLED manufacturing method using selective laser curing according to an embodiment of the present invention.

Hereinafter, a QLED manufacturing method using selective laser curing according to an embodiment of the present invention with reference to the accompanying drawings, a QLED and a manufacturing apparatus for manufacturing the same will be described.

First, a QLED manufacturing method using selective laser curing according to an embodiment of the present invention will be described.

1 is a flowchart of a QLED manufacturing method using selective laser curing according to an embodiment of the present invention. 2 is a process diagram for the first light emitting layer coating step of the QLED manufacturing method using selective laser curing according to an embodiment of the present invention. 3 is a process diagram of a first light emitting device region selective curing step of a QLED manufacturing method using selective laser curing according to an embodiment of the present invention. 4 is a process diagram of a first light emitting device forming step of a QLED manufacturing method using selective laser curing according to an embodiment of the present invention. 5 is a process diagram for the second light emitting layer coating step of the QLED manufacturing method using selective laser curing according to an embodiment of the present invention. 6 is a process diagram of a second light emitting device region selective curing step of the QLED manufacturing method using selective laser curing according to an embodiment of the present invention. 7 is a process diagram of a second light emitting device forming step of a QLED manufacturing method using selective laser curing according to an embodiment of the present invention. 8 is a process diagram for the third emission layer coating step of the QLED manufacturing method using selective laser curing according to an embodiment of the present invention. 9 is a process diagram for the third light emitting device region selective curing step of the QLED manufacturing method using selective laser curing according to an embodiment of the present invention. 10 is a process diagram of a third light emitting device forming step of a QLED manufacturing method using selective laser curing according to an embodiment of the present invention. 11 is a process diagram of a light emitting device etching step of a QLED manufacturing method using selective laser curing according to an embodiment of the present invention. 12 is a partial perspective view of a QLED by a QLED manufacturing method using selective laser curing according to an embodiment of the present invention.

A QLED manufacturing method using selective laser curing according to an embodiment of the present invention, with reference to FIGS. 1 to 12 , a first light emitting layer coating step (S10), a first light emitting device region curing step (S20), and a second 1 light emitting device forming step (S30), a second light emitting layer coating step (S40), the second light emitting device region curing step (S50), a second light emitting device forming step (S60), and a third light emitting layer coating step ( S70), a third light emitting device region curing step (S80), and a third light emitting device forming step (S90) may be included. The QLED manufacturing method using the selective laser curing may further include a light emitting device etching step (S100).

The quantum dot light emitting diode (QLED) may be formed in a conventionally known general structure. For example, in the quantum dot light emitting diode, a lower electrode may be formed on an upper surface of a base substrate, RGB light emitting devices may be arranged in a lattice shape on the upper surface, and an upper electrode may be formed on an upper surface of each RGB light emitting device. Here, the quantum dot light emitting diode may have a structure in which a lower electrode is formed on an upper surface of a base substrate or a structure in which a base substrate is formed as a lower electrode. In addition, the base substrate may be integrally formed with the lower electrode. In addition, in the quantum dot light emitting diode, an additional layer may be formed between the base substrate and the lower electrode. In addition, in the quantum dot light emitting diode, an additional layer for improving efficiency may be formed between the lower electrode and the light emitting layer or between the light emitting layer and the upper electrode. For example, an electron transport layer may be formed between the lower electrode and the emission layer, and a hole transport layer may be formed between the emission layer and the upper electrode. In addition, a hole injection layer may be further formed between the hole transport layer and the upper electrode. For the hole transport layer and the hole injection layer, general materials used in QLED or OLED may be used. In addition, as the electron transport layer, a general material used in QLED or OLED may be used.

In the QLED manufacturing method, an RGB light emitting device may be formed by etching the light emitting layer by applying an optimized high-resolution patterning process using a laser direct writing lithography method. The QLED manufacturing method is centered on a method of forming each RGB light emitting diode constituting a quantum dot light emitting diode by laser etching after selective laser curing. In the QLED manufacturing method, an RGB light emitting device may be manufactured using a laser light-reactive quantum dot composite material. In the QLED manufacturing method, a laser photoreactive quantum dot composite material is mixed in a light emitting layer and a laser in a wavelength band reacting to the photoreactive quantum dot composite material is used to laser harden the light emitting device area relatively strongly. In addition, the QLED manufacturing method may use a laser having a wavelength band different from the wavelength band used in the curing process to etch the light emitting layer in the region other than the light emitting device.

For example, in the QLED manufacturing method, a laser light-reactive quantum dot composite material is coated on a substrate to form a light emitting layer, then firstly, a curing laser for selectively curing the light emitting element region of the light emitting layer is irradiated, and secondly, the light emitting element region It can proceed by irradiating an etching laser for etching the light emitting layer except for the light emitting layer. In the QLED manufacturing method, an ultraviolet laser may be used as a curing laser in the light emitting element region of the light emitting layer. In this case, the light emitting layer including the photoinitiator whose activity is promoted by the ultraviolet laser may be selectively cured by polymer polymerization and crosslinking reaction proceeding only in the region of the light emitting device to which the ultraviolet laser is irradiated. In addition, the QLED manufacturing method may etch the material of the light emitting layer except for the cured light emitting device region by irradiating the entire light emitting layer with visible light or infrared laser with an etching laser. When the etching laser is irradiated as a whole, the cured light emitting device region is etched relatively slowly, and the region other than the uncured light emitting device region is etched rapidly, thereby selectively forming a pattern for the light emitting device. In addition, the QLED manufacturing method may be etched while sequentially irradiating an etching laser to the light emitting layer except for the light emitting device region. On the other hand, the QLED manufacturing method may use a different type of laser from the curing laser and the etching laser according to the type and characteristics of the composite material forming the light emitting layer. For example, a visible light laser may be used as the curing laser, and an infrared laser may be used as the etching laser.

In addition, in the above, the first light emitting layer and the first light emitting device may be any one of the R light emitting layer and the R light emitting device, the G light emitting layer and the G light emitting device, and the B light emitting layer and the B light emitting device. In addition, the second light emitting layer and the second light emitting device may be any one of the R light emitting layer and the R light emitting device, the G light emitting layer and the G light emitting device, and the B light emitting layer and the B light emitting device. Also, the third light emitting layer and the third light emitting device may be the other one of the R light emitting layer and the R light emitting device, the G light emitting layer and the G light emitting device, and the B light emitting layer and the B light emitting device. Hereinafter, the first light emitting layer and the first light emitting device are the R light emitting layer and the R light emitting device, the second light emitting layer and the second light emitting device are the G light emitting layer and the G light emitting device, and the third light emitting layer and the third light emitting device are the B light emitting layer and the B light emitting device. It will be described based on the small size.

In addition, in the following description process, when the distinction between the first light emitting layer, the second light emitting layer, and the third light emitting layer is not necessary, it is referred to as a light emitting layer, and when the distinction between the first light emitting element, the second light emitting element and the third light emitting element is not necessary can be referred to as a light emitting device. The light emitting layer may refer to a continuously coated layer, and the light emitting device may refer to a thin film formed separately from each other while the light emitting layer is laser etched.

In the QLED manufacturing method, the quantum dot material for forming the first light emitting layer is coated on the entire area where the RGB light emitting devices are formed on the base substrate, and then the first light emitting device area is cured by irradiating a curing laser, and the area except for the light emitting device area is cured. An ultra-precise curing and etching method in which the first light emitting device is formed by irradiating with an etching laser and etching may be performed. Here, the laser curing may refer to a process of curing the light emitting layer using a curing laser. Also, the laser etching may refer to a process of etching the emission layer using a laser. In the QLED manufacturing method, R light emitting device, G light emitting device, and B light emitting device can be sequentially formed by repeatedly performing light emitting layer coating, laser curing, and laser etching for each RGB light emitting device.

In the QLED manufacturing method, it may be possible to implement a QLED panel having an ultra-high resolution through micro- or nano-sized laser irradiation. In addition, in the QLED manufacturing method, the light emitting device may be formed by ultra-short layer curing or etching of the light emitting layer with a laser. Accordingly, the light emitting layer may be formed of a laser light-reactive quantum dot composite material having a characteristic that the etched cross-section can maintain a vertical shape while being smoothly cured or etched in the laser curing or etching process. That is, the laser light-reactive quantum dot composite material of the light emitting layer may be formed of an optimal material for proper curing or etching by laser.

In addition, in the laser, the shape and size of the laser beam, the overlapping irradiation of the laser, the power of the laser, the wavelength of the laser, the laser irradiation time, the scan speed of the laser, and the scan width of the laser can be controlled for precise curing or etching of the light emitting layer. have. For example, by controlling the intensity and irradiation time of the laser, the thickness and size of the light emitting layer to be cured or etched can be precisely controlled on a nanoscale.

In addition, while the laser is irradiated using a vertical irradiation method using a telecentric lens or an array lens, the light emitting layer may be more precisely cured or etched to be patterned. In addition, since the laser is irradiated using a telecentric lens, the light emitting device can be uniformly formed on the light emitting layer over a large area. In addition, the laser may use a vertical cavity surface emitting laser (VCSEL).

In addition, the laser may be irradiated using a telecentric lens and a laser transmission control reticle. The laser transmission control reticle may control the characteristics of the transmission surface and the non-transmission surface of the laser so that the laser is precisely irradiated to the light emitting device region in the emission layer. For example, the laser transmittance control reticle may control the transmittance of the transmittance and non-transmitting surfaces of the laser to precisely irradiate the laser to the light emitting device region or areas other than the light emitting device region at a nano scale.

In addition, the base substrate may be formed of a material that can be minimized to be damaged by the laser irradiated during the etching process of the light emitting layer. In addition, the base substrate may be formed of a general substrate used in a flat panel display device. The base substrate may be a glass substrate or a transparent plastic substrate. In addition, the base substrate may be cooled to an appropriate temperature so that the light emitting layer is smoothly etched during the etching process of the light emitting layer and the other layers are minimally affected. In addition, the etched light emitting layer may be cooled by spraying a cooling gas cooled to an appropriate temperature to the upper surface of the light emitting layer. The cooling gas may be an inert gas.

The lower electrode and the upper electrode may be formed of a metal oxide suitable for each transparent/opaque condition, including a metal, or other non-oxide inorganic material. The upper electrode may be made of a transparent conductive metal such as ITO, IZO, ITZO, or AZO, which is transparent for upper emission. The lower electrode is formed of a metal having a small work function to facilitate electron injection, that is, I, Ca, Ba, Ca/Al, LiF/Ca, LiF/Al, BaF2/Al, BaF2/Ca/Al, Al, Mg, Ag: Mg alloy or the like can be used. In addition, the lower electrode and the upper electrode may provide top emission, bottom emission, or both sides emission depending on the type of material to be formed. In addition, the lower electrode and the upper electrode may be positioned oppositely according to the structure of the base substrate and the light emitting layer.

_{In addition, an inert gas (N 2} gas, argon gas) may be blown adjacent to the laser irradiation position in order to quickly remove fumes or vapors formed by volatilizing the light emitting layer in the process of curing or etching the light emitting layer by irradiating a laser. have. In addition, the fume or vapor may be inhaled and discharged to the outside. In this case, it is possible to minimize the re-coating of the material of the light emitting layer that is volatilized onto the upper surface of the light emitting device. In addition, in the process of curing or etching the light emitting layer, the light emitting devices may be individually cured or etched, or etched to form each device after etching in units of rows.

The laser photoreactive quantum dot composite material used in the light emitting layer may include a quantum dot material, a base material, and a photoinitiator. The quantum dot material may include a quantum dot material that emits light in a wavelength region required for each light emitting layer. The base material may include a monomer and an oligomer. The monomer and oligomer may be a vinyl-based or acrylate-based material. The photoinitiator may be an ultraviolet initiator when ultraviolet light is used as the curing laser. The photoinitiator may be benzoin ether-based or amine-based. Meanwhile, when a visible light laser is used as the curing laser, the photoinitiator may be a visible light initiator. In addition, when an infrared laser is used as the curing laser, the photoinitiator may be an infrared initiator. In the laser light-reactive quantum dot composite material, the base material is mixed in less than 10% by weight compared to the quantum dot material, so that the reduction in quantum dot efficiency can be minimized. The laser photoreactive quantum dot composite material may further include a solvent.

The laser photoreactive quantum dot composite material may be prepared through colloidal synthesis. In general, the quantum dot material may be formed surrounded by an organic ligand having a hydrophobic alkyl structure and dispersed in an organic solvent. In addition, although the glass ligand has a surface stabilization property, the hydrophobic alkyl structure may have poor compatibility with mixed composite materials. Therefore, the laser light-reactive quantum dot composite material can be improved in compatibility with the base material and the photoinitiator by replacing the ligand of the quantum dot material with a chemically reactive ligand material containing a functional group.

The quantum dot material may be a colloidally synthesized material in the form of a core/shell. For example, the quantum dot material may be indium-based (Red/green) or zinc telluride-based (Blue). In addition, as the quantum dot material, a general quantum dot material used in QLED may be used.

The quantum dot material may display a basic color such as blue, green, or red or a color combining them. The quantum dot material may be selected from the group consisting of, for example, a red quantum dot material having an emission wavelength region of 570 to 780 nm, a green quantum dot material having an emission wavelength region of 480 to 570 nm, and a blue quantum dot material having an emission wavelength region of 380 to 480 nm. . The quantum dot material may be a generally known semiconductor crystal material. In addition, the quantum dot material may be a light emitting material having a size of several nanometers to several tens of nanometers. The quantum dot material can control the emission wavelength in various ranges through size control. In addition, the quantum dot material can control the emission wavelength in a variety of ranges through alloying or doping of various materials. The quantum dot material may include a group II-VI compound, a group III-V compound, a group IV-VI compound, a group IV compound, and combinations thereof.

The group II-VI compound may be a binary compound selected from the group consisting of CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, and mixtures thereof; CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgZnTe, HgZnS, HgZnSe, HgZnTe, MgZnS, MgZnS and mixtures of three members selected from the group consisting of: bovine compounds; and HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, and mixtures thereof.

The group III-V compound is a binary compound selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, and mixtures thereof; a ternary compound selected from the group consisting of GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, and mixtures thereof; and GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, and mixtures thereof.

The group IV-VI compound is a binary compound selected from the group consisting of SnS, SnSe, SnTe, PbS, PbSe, PbTe, and mixtures thereof; a ternary compound selected from the group consisting of SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, and mixtures thereof; and a quaternary compound selected from the group consisting of SnPbSSe, SnPbSeTe, SnPbSTe, and mixtures thereof.

The group IV element may be selected from the group consisting of Si, Ge, and mixtures thereof, and the group IV compound may be a binary compound selected from the group consisting of SiC, SiGe, and mixtures thereof. In addition, oxides of group II; oxides of group III; oxides of group VI; oxides of group V; or an oxide of Group VI.

In the quantum dot material having the core/shell structure, an average particle diameter of a core may be 2 nm to 6 nm, and an average thickness of the shell may be 3 nm to 7 nm. In addition, the average particle diameter of the quantum dot material may be 5nm to 20nm. The shape of the quantum dot material is not particularly limited to a generally used shape, but more specifically, spherical, pyramidal, multi-arm, or cubic nanoparticles, nanotubes, nanowires, and nanoparticles It may be formed in the shape of fibers, nanoplatelet particles, and the like.

The laser light-reactive quantum dot composite material used for the first light emitting layer, the second light emitting layer, and the third light emitting layer may include quantum dot materials having different sizes. For example, the quantum dot material of the first light emitting layer may have a relatively large size, and the quantum dot material of the second light emitting layer and the quantum dot material of the third light emitting layer may have a relatively small size.

In addition, the quantum dot material may further include a light-absorbing material having a high absorption rate for a wavelength band of an etching laser used to etch the light emitting layer. For example, in the case of using a visible light band laser as the etching laser, the laser photoreactive quantum dot composite material may further include a light absorbing material that absorbs a relatively large amount of light in the visible light band (eg, 532 nm band). can For example, the light absorbing material may be an azo dye. Therefore, when irradiating a laser of 532 nm band to etch the light emitting layer, the light emitting layer absorbs more laser due to the action of the light absorbing material, and thus the light emitting layer is heated relatively more, and the etching efficiency can be increased.

In addition, in the case of using a laser in the infrared band (eg, 1,064 nm band) as the etching laser, the laser photoreactive quantum dot composite material may include a light absorbing material that absorbs a relatively large amount of light in the 1,064 nm band. have. For example, the light-absorbing material may be a cyan-based dye. Therefore, when irradiating a laser in the infrared band to etch the light emitting layer, the light emitting layer absorbs more of the laser by the action of the light absorbing material, so that the light emitting layer is heated relatively more, and the etching efficiency can be increased.

In addition, when a laser of an ultraviolet band (eg, 355 nm band) is used as the etching laser, the laser light-reactive quantum dot composite material may include a light absorbing material that absorbs a relatively large amount of light in the 355 nm band. For example, the light-absorbing material may be a metal oxide (eg, MoO ₃ ), BC-EDTA, or MeO-TPD material. Therefore, when irradiating a laser in the ultraviolet band to etch the light emitting layer, the light emitting layer absorbs more of the laser by the action of the light absorbing material, so that the light emitting layer is heated relatively more, and the etching efficiency can be increased.

The first light-emitting layer coating step ( S10 ) is a step of coating the first light-emitting layer 20a on the upper surface of the base substrate 10 , referring to FIG. 2 . In the first light emitting layer coating step (S10), various commonly used coating methods can be applied. For example, the first light-emitting layer coating step ( S10 ) may be performed by a dry process or a wet process. Here, the base substrate 10 may have a structure in which a lower electrode is formed on an upper surface of the base substrate 10 or a structure in which the base substrate 10 is formed as a lower electrode. The same applies to the description below.

The first light emitting layer 20a may be coated with a composite material including various quantum dot materials generally used to form an R light emitting device. The first light emitting layer 20a may be coated with a laser light-reactive quantum dot composite material. The laser photoreactive quantum dot composite material may be formed by mixing a quantum dot material, a base material, and a photoinitiator. The quantum dot material may be a red quantum dot material having an emission wavelength range of 570 to 780 nm. The base material may include a monomer and an oligomer. The photoinitiator may be an ultraviolet initiator. The photoinitiator may be benzoin ether-based or amine-based.

In addition, the first light emitting layer 20a is a light absorbing material that absorbs a relatively large amount of light in the visible light band (eg, 532 nm band) or absorbs relatively much light in the infrared band (eg, 1,064 nm band). It may include a light-absorbing material. Accordingly, the first light emitting layer 20a is heated while absorbing a relatively large amount of light when the etching laser is irradiated to increase etching efficiency. The light-absorbing material may be an azo-based dye or a cyan-based dye.

The first light emitting device region curing step S20 is a step of selectively curing by irradiating a curing laser to the first light emitting device region where the first light emitting device is formed in the first light emitting layer 20a, referring to FIG. 3 . . In the first light emitting device region curing step ( S20 ), an ultraviolet laser may be used as the curing laser (a). The curing laser may be irradiated to the first light emitting device region where the first light emitting device 20 is formed in the first light emitting layer 20a to selectively cure only the first light emitting device region. Since the first light emitting layer 20a contains a photoinitiator whose activity is promoted by the ultraviolet laser, the polymer polymerization and crosslinking reaction proceed only in the region of the first light emitting device to which the ultraviolet laser is irradiated, thereby selectively curing the first light emitting layer 20a.

In the first light emitting device forming step (S30), referring to FIG. 4 , the first light emitting layer 20a is etched while irradiating an etching laser b to the upper surface of the first light emitting layer 20a to form a first light emitting device. is a step to In the first light emitting device forming step ( S30 ), an etching laser may be irradiated as a whole to the first light emitting layer 20a. In addition, in the first light emitting device forming step ( S30 ), an etching laser may be irradiated to the uncured first light emitting layer 20a in a region except for a region where the first light emitting device 20 is formed. The etching laser (b) may be a visible light laser or an infrared laser. That is, the etching laser (b) may be a laser of 532 nm band or a laser of 1,064 nm band. Since the first light emitting layer 20a includes a light absorbing material that absorbs a relatively large amount of light in the visible light band or a light absorption material that absorbs a relatively large amount of light in the infrared band, it emits a relatively large amount of light when the etching laser is irradiated. It is heated while absorbing, and the etching efficiency may be increased.

In the first light emitting device forming step S30 , the first light emitting device 20 and the upper surface of the base substrate 10 (or lower electrode) excluding the region where the first light emitting device 20 is formed may be exposed. The first light emitting device 20 may be an R light emitting device.

In the first light emitting device forming step (S30), it is necessary to minimize damage to the base substrate 10 (or lower electrode) positioned under the first light emitting layer 20a in the process of etching the first light emitting layer 20a. do. Accordingly, in the forming of the first light emitting device ( S30 ), the etching thickness of the first light emitting layer 20a may be controlled by using soft laser scanning during the laser etching process. In addition, the first light emitting device forming step ( S30 ) may control the temperature of the base substrate 10 . For example, a temperature control means (not shown) may be provided on the lower surface of the base substrate 10 to heat or cool the base substrate 10 to a required process temperature.

In the second light emitting layer coating step (S40), referring to FIG. 5 , the second light emitting layer 30a is coated on the area including the upper surface of the base substrate 10 exposed to the periphery of the first light emitting device 20 . is a step The second light emitting layer may be entirely or partially coated on the upper surface of the first light emitting device 20 . The second light-emitting layer coating step (S40) may be applied by the same coating method as the first light-emitting layer coating step (S10). For example, the second light-emitting layer coating step ( S40 ) may be performed by a dry process or a wet process.

In contrast to the first light emitting layer 20a, the second light emitting layer 30a may be coated with the same or similar composite material except for the quantum dot material. The second light emitting layer 30a may be coated with a composite material including various quantum dot materials generally used to form a G light emitting device. The second light emitting layer 30a may be coated with a laser light-reactive quantum dot composite material. The laser photoreactive quantum dot composite material may be formed by mixing a quantum dot material, a base material, and a photoinitiator. The quantum dot material may be a green quantum dot material having an emission wavelength range of 480 to 570 nm. The base material may include a monomer and an oligomer. The photoinitiator may be an ultraviolet initiator. The photoinitiator may be benzoin ether-based or amine-based.

In addition, the second light emitting layer 30a is a light absorbing material that absorbs a relatively large amount of light in the visible light band (eg, 532 nm band) or absorbs a relatively large amount of light in the infrared band (eg, 1,064 nm band). It may include a light-absorbing material. Accordingly, the second emission layer 30a is heated while absorbing a relatively large amount of light when the etching laser is irradiated, so that etching efficiency may be increased. The light-absorbing material may be an azo-based dye or a cyan-based dye. Meanwhile, since the second light-emitting layer 30a is removed after being coated on the upper surface of the first light-emitting device 20, it is preferably formed of a material having little reactivity with the material forming the first light-emitting layer 20a. In addition, the second light-emitting layer 30a is preferably formed of a material that is easily separated from the material forming the first light-emitting layer 20a.

In the second light emitting device region curing step (S50), referring to FIG. 6 , the second light emitting device region in the second light emitting layer 30a is selectively cured by irradiating a curing laser to the second light emitting device region where the second light emitting device 30 is formed. It is a step to The second light emitting device region curing step (S50) may be performed in the same manner as or similarly to the first light emitting device region curing step (S20). In the second light emitting device region curing step ( S50 ), an ultraviolet laser may be used as the curing laser (a). The curing laser (a) may be irradiated to the second light emitting device region where the second light emitting device 30 is formed in the second light emitting layer 30a to selectively cure only the second light emitting device region. Since the second light emitting layer 30a contains a photoinitiator whose activity is promoted by the ultraviolet laser, the polymer polymerization and crosslinking reaction proceeds only in the area of the second light emitting device irradiated with the ultraviolet laser, thereby selectively curing.

Referring to FIG. 7 , the second light emitting device forming step S60 is a step of etching the second light emitting layer 30a by irradiating an etching laser b to the upper surface of the second light emitting layer 30a. The second light emitting device forming step ( S60 ) may be performed in the same way as or similarly to the first light emitting device forming step ( S30 ). In the step of forming the second light emitting device ( S60 ), the etch laser (b) may be irradiated as a whole to the second light emitting layer 30a. In addition, in the step of forming the second light emitting device ( S60 ), the etching laser b may be irradiated to the second light emitting layer 30a in an uncured area except for the area where the second light emitting device 30 is formed. The etching laser (b) may be a visible light laser or an infrared laser. That is, the etching laser may be a laser of 532 nm band or a laser of 1,064 nm band. Since the second light emitting layer 30a includes a light absorbing material absorbing a relatively large amount of light in the visible light band or a light absorbing material absorbing a relatively large amount of light in the infrared band, when the etching laser b is irradiated, it is relatively It is heated while absorbing a lot of light, and etching efficiency may be increased.

In the second light emitting device forming step (S60), the first light emitting device 20, the second light emitting device 30, and the base substrate (excluding the region where the first light emitting device 20 and the second light emitting device 30 are formed) 10) (or the lower electrode) may be exposed.

In the second light emitting device forming step (S60), the first light emitting device 20 and the base substrate 10 (or lower electrode) positioned under the second light emitting layer 30a in the process of etching the second light emitting layer 30a ) to minimize damage to Accordingly, in the forming of the second light emitting device ( S60 ), the etching thickness of the second light emitting layer 30a may be controlled using soft laser scanning during the laser etching process. In addition, the second light emitting device forming step ( S60 ) may control the temperature of the base substrate 10 .

In the third light-emitting layer coating step (S70), referring to FIG. 8 , on the upper surface of the base substrate 10 (or lower electrode) exposed to the periphery of the first light-emitting device 20 and the second light-emitting device 30 . This is a step of coating the third light emitting layer 40a. The third light emitting layer 40a may be entirely or partially coated on the upper surfaces of the first light emitting device 20 and the second light emitting device 30 . The third light-emitting layer coating step (S70) may be applied by the same coating method as the first light-emitting layer coating step (S10) or the second light-emitting layer coating step (S40). For example, the third light emitting layer coating step ( S47 ) may be performed by a dry process or a wet process.

In contrast to the first light emitting layer 20a or the second light emitting layer 30a, the third light emitting layer 40a may be coated with the same or similar composite material except for the quantum dot material. The third light emitting layer 40a may be coated with a composite material including various quantum dot materials generally used to form the B light emitting device. The third light emitting layer 40a may be coated with a laser light-reactive quantum dot composite material. The laser photoreactive quantum dot composite material may be formed by mixing a quantum dot material, a base material, and a photoinitiator. The quantum dot material may be a blue quantum dot material having an emission wavelength range of 380 to 480 nm. The base material may include a monomer and an oligomer. The photoinitiator may be an ultraviolet initiator. The photoinitiator may be benzoin ether-based or amine-based.

In addition, the third light emitting layer 40a is a light absorbing material that absorbs a relatively large amount of light in the visible light band (eg, 532 nm band) or absorbs a relatively large amount of light in the infrared band (eg, 1,064 nm band). It may include a light-absorbing material. Accordingly, the third light emitting layer 40a is heated while absorbing a relatively large amount of light when the etching laser is irradiated to increase etching efficiency. The light-absorbing material may be an azo-based dye or a cyan-based dye. On the other hand, since the third light-emitting layer 40a is removed after being coated on the upper surfaces of the first light-emitting device 20 and the second light-emitting device 30 , the material forming the first light-emitting layer 20a and the second light-emitting layer 30a It is preferable to be formed of a material with little hyperreactivity. In addition, the third light-emitting layer 40a is preferably formed of a material that is easily separated from the material forming the first light-emitting layer 20a and the second light-emitting layer 30a.

In the third light emitting device region curing step (S80), referring to FIG. 9 , a curing laser (a) is irradiated to the third light emitting device region where the third light emitting device 40 is formed in the third light emitting layer 40a. This is a selective curing step. The third light emitting device region curing step ( S80 ) may be performed in the same manner as or similarly to the first light emitting device region curing step ( S20 ) or the second light emitting device region curing step ( S50 ). In the third light emitting device region curing step ( S80 ), an ultraviolet laser may be used as the curing laser (a). The curing laser may be irradiated to the third light emitting device region where the third light emitting device 40 is formed in the third light emitting layer 40a to selectively cure only the third light emitting device region. Since the third light emitting layer 40a contains a photoinitiator whose activity is promoted by the ultraviolet laser, the polymer polymerization and crosslinking reaction proceeds only in the area of the second light emitting device irradiated with the ultraviolet laser, so that it can be selectively cured.

Referring to FIG. 10 , the third light emitting device forming step S90 is a step of etching the third light emitting layer 30a by irradiating an etching laser b to the upper surface of the third light emitting layer 30a. The third light emitting device forming step ( S90 ) may be performed in the same way as or similarly to the first light emitting device forming step ( S30 ) or the second light emitting device forming step ( S60 ). In the third light emitting device forming step ( S90 ), the etch laser b may be irradiated as a whole to the third light emitting layer 40a. In addition, in the third light emitting device forming step S90 , the etching laser b may be irradiated to the third light emitting layer 40a in an uncured area except for the area where the third light emitting device 40 is formed. The etching laser (b) may be a visible light laser or an infrared laser. That is, the etching laser may be a laser of 532 nm band or a laser of 1,064 nm band. Since the third light emitting layer 40a includes a light absorbing material that absorbs a relatively large amount of light in the visible light band or a light absorption material that absorbs a relatively large amount of light in the infrared band, when the etching laser b is irradiated, it is relatively It is heated while absorbing a lot of light, and etching efficiency may be increased.

In the third light emitting device forming step ( S90 ), the first light emitting device 20 , the second light emitting device 30 , the third light emitting device 40 , and the first light emitting device 20 and the second light emitting device 30 . and the upper surface of the base substrate 10 (or lower electrode) excluding the region where the third light emitting device 40 is formed may be exposed. Accordingly, after the third light emitting device forming step S90 , the first light emitting device 20 , the second light emitting device 30 , and the third light emitting device 40 may be formed on the upper surface of the base substrate 10 . .

In the third light emitting device forming step (S90), in the process of etching the third light emitting layer 40a, the first light emitting device 20, the second light emitting device, and the base substrate 10 positioned under the third light emitting layer 40a ) (or lower electrode) is necessary to minimize damage. Accordingly, in the forming of the third light emitting device ( S90 ), the etching thickness of the third light emitting layer 40a may be controlled by using soft laser scanning during the laser etching process. In addition, the third light emitting device forming step ( S90 ) may control the temperature of the base substrate 10 .

In the light emitting device etching step ( S100 ), referring to FIG. 11 , the upper surfaces of the first light emitting device 20 and the second light emitting device 20 are additionally etched with a laser. In the light emitting device etching step S100 , the upper surface of the third light emitting device 40 may be further etched with a laser. The light emitting device etching step ( S100 ) may be performed using an etching laser. In addition, in the light emitting device etching step ( S100 ), a laser having a wavelength may be used by reflecting the characteristics of the light emitting devices. Since the first light emitting device 20 and the second light emitting device 30 are etched after the second light emitting layer 20a or the third light emitting layer 30a is coated on the upper surface, respectively, the second light emitting layer 20a or the second light emitting layer 30a is formed on the upper surface. 3 The quantum dot material of the emission layer 30a may remain. Accordingly, in the light emitting device etching step S100 , the upper surfaces of the first light emitting device 20 and the second light emitting device 30 may be further etched to remove the quantum dot material remaining on the upper surfaces. The third light emitting device 40 may be etched at the same height to match the thickness of the first light emitting device 20 and the second light emitting device 300. Therefore, after the light emitting device etching step S100, the first light emission The device 20, the second light emitting device 30, and the third light emitting device 40 may be formed to have the same thickness.

In addition, the light emitting device etching step ( S100 ) may be performed together in the process of forming the third light emitting device 40 by etching the third light emitting layer 40a. To this end, when the first light emitting layer 20a is coated, the first light emitting layer 20a may be coated to a thickness greater than that of the final first light emitting device 20 . For example, the first light emitting layer 20a may be coated to a thickness of 1 to 20% of the thickness of the first light emitting device 20 . Also, the second light emitting layer 30a may be coated to a thickness of 1 to 20% of the thickness of the second light emitting device 30 in the same manner. In addition, the first light-emitting layer 20a and the second light-emitting layer 30a may be formed to have a thickness greater than that of the third light-emitting layer 40a. The first light-emitting layer 20a and the second light-emitting layer 30a may be formed to have a thickness of 1 to 20% thicker than that of the third light-emitting layer 40a.

In addition, the first light emitting device 20 and the second light emitting device 30 are etched together in the process of forming the third light emitting device 40 by etching the third light emitting layer 40a to form the first light emitting device required. (20) and the thickness of the second light emitting device 30 may be formed. In addition, the third light emitting layer 40a may be formed to have a thickness corresponding to the thickness of the third light emitting device 40 in order to be etched in the same manner as that of the first light emitting device 20 and the second light emitting device 30 . . That is, the third light emitting layer 40a may be coated with the same thickness as that of the third light emitting device 40 . In the process of etching the third emission layer 40a, the thickness of the third emission layer 40a and the increased thickness of the first emission layer 20a and the second emission layer 30a may be etched. In this case, the top surfaces of the first light emitting device 20 and the second light emitting device 30 are over-etched so that no other quantum dot material remains on the top surfaces.

For example, if the final set thickness of the first light emitting device 20, the second light emitting device 30, and the third light emitting device 40 is 300 nm, the first light emitting layer 20a and the second light emitting layer 30a Silver may be formed to a thickness of 310 nm. Accordingly, the first light emitting device 20 and the second light emitting device 30 may be primarily formed to have a thickness of 310 nm in the process of etching the first light emitting layer 20a and the second light emitting layer 30a. Next, after the third light emitting layer 40a is coated to a thickness of 300 nm, it may be etched to a thickness of 310 nm in the process of forming the third light emitting device 40 . In this case, other quantum dot materials remaining on the upper surfaces of the first light emitting device 20 and the second light emitting device 30 may be removed together with an additional 10 nm etch. Finally, the first light emitting device 20 , the second light emitting device 30 , and the third light emitting device 40 may each be formed to have a thickness of 300 nm.

On the other hand, since the third light emitting layer 40a is removed after being coated on the upper surfaces of the first light emitting device 20 and the second light emitting device 30 , the material forming the first light emitting layer 20a and the second light emitting layer 30a) It is preferable to be formed of a material that is less reactive with the material forming the . In addition, the third light-emitting layer 40a is preferably formed of a material that is easily separated from the material forming the first light-emitting layer 20a and the second light-emitting layer 30a.

In the above description, the first light emitting device 20 is the R light emitting device, the second light emitting device 30 is the G light emitting device, and the third light emitting device 40 is the B light emitting device. That is, since the first light emitting device 20, the second light emitting device 30, and the third light emitting device 40 are sequentially formed, the R light emitting device, the G light emitting device, and the B light emitting device can be sequentially formed. . In addition, the R light emitting device, the G light emitting device, and the B light emitting device may be formed in different order. That is, the B light emitting device may be formed first, and then the R light emitting device and the G light emitting device may be formed.

On the other hand, when the electron transport layer is formed between the base substrate 10 and the emission layers 20a, 30a, and 40a, and the hole transport layer is formed on the emission layer, the process may proceed as follows. For example, in the QLED manufacturing method, after forming an electron transport layer on the upper surface of the base substrate 10 (or lower electrode) and forming the first light emitting layer 20a, laser curing and etching may be performed. That is, in the process of forming the first light emitting device 20 , the electron transport layer and the first light emitting layer 20a are sequentially formed on the upper surface of the base substrate 10 , and then laser curing and etching are performed. In this case, in the laser etching process, only the first light emitting layer 20a in a region excluding the region where the first light emitting device 20 is formed may be etched.

In addition, in the process of forming the second light emitting device 30 , after forming the second light emitting layer 30a on the upper surface of the electron transport layer, laser curing and etching may be performed. In this case, in the laser etching process, only the second light emitting layer 30a in a region excluding the region where the second light emitting device 30 is formed may be etched.

In addition, in the process of forming the third light emitting device 40 , after the third light emitting layer 40a is formed on the upper surface of the electron transport layer, laser curing and etching may be performed. In this case, in the laser etching process, only the third light emitting layer 40a in a region excluding the region where the third light emitting device 40 is formed may be etched.

Next, the first light emitting device 20 and the second light emitting device 30 may be etched to have the same thickness as the third light emitting device 40 . Also, the third light emitting device 40 may be etched together. In this case, the electron transport layer may also be etched. A hole transport layer may be coated on the upper surface of the light emitting device 20 , 30 , 40 and the upper surface of the base substrate 10 . In addition, the hole transport layer may be removed by etching in areas other than the light emitting devices 20 , 30 , and 40 . Meanwhile, the electron transport layer may be etched together with the hole transport layer.

In addition, in the QLED manufacturing method, when the first light emitting layer 20a is etched in the process of forming the first light emitting device 20 , the electron transport layer located thereunder may be etched together. In this case, an electron transport layer may be additionally formed on the upper surface of the base substrate 10 before the second emission layer 30a and the third emission layer 40a are formed. That is, when the second light-emitting layer 30a is coated, the electron transport layer may be first coated and the second light-emitting layer 30a may be formed. In addition, when the second light emitting device 30 is formed, the electron transport layer and the second light emitting layer 30a may be etched together. In addition, when coating the third light emitting layer 40a, the electron transport layer may be first coated to form the third light emitting layer 40a. When the third light emitting device 30 is formed, the electron transport layer and the third light emitting layer 40a may be etched.

Next, the first light emitting device 20 and the second light emitting device 30 may be etched to have the same thickness as the third light emitting device 40 . Also, the third light emitting device 40 may be etched together. A hole transport layer may be coated on the upper surface of the light emitting device 20 , 30 , 40 and the upper surface of the base substrate 10 . In addition, the hole transport layer may be removed by etching in areas other than the light emitting devices 20 , 30 , and 40 .

The QLED according to an embodiment of the present invention may be manufactured by the above-described QLED manufacturing method. Accordingly, in the QLED, traces of laser etching may remain on the upper surfaces of the first light emitting device 20 and the second light emitting device 30 . In addition, when the third light emitting device 30 is also etched as described above, an etched trace may remain on the same upper surface. In general, since the first light emitting device 20 , the second light emitting device 30 , and the third light emitting device 30 are formed by coating, no trace due to etching remains on the upper surface.

In addition, traces of etching by the etching laser may remain on the side surfaces of the first light emitting device 20 , the second light emitting device 30 , and the third light emitting device 30 . In addition, the first light emitting device 20 , the second light emitting device 30 , and the third light emitting device 30 may have uniform size and spacing.

In the QLED according to an embodiment of the present invention, referring to FIG. 12 , the first light emitting device 20 , the second light emitting device 30 , and the third light emitting device 40 may be formed to form one pixel. . In addition, in the QLED, pixels by the first light emitting device 20 , the second light emitting device 30 , and the third light emitting device 40 are arranged in a grid shape to form a QLED panel.

The QLED manufacturing apparatus according to an embodiment of the present invention may be a manufacturing apparatus for applying the QLED manufacturing method using laser etching. Accordingly, the QLED manufacturing apparatus may include a laser irradiation module, a substrate cooling module, and a gas blowing module together with a coating module for coating the quantum dot material.

The coating module may be formed of a coating module of a generally used quantum dot material. For example, the coating module may be formed of a dry coating module or a wet coating module.

The laser irradiation module may irradiate a curing laser for selectively curing the light emitting element region of the light emitting layer and an etching laser for etching the light emitting layer. Accordingly, the laser irradiation module may include a curing laser module irradiating a curing laser and an etching laser module irradiating an etching laser. In addition, the laser irradiation module includes the beam shape and size of the irradiated curing laser and the etching laser, the overlapping irradiation of the curing laser and the etching laser, the power of the curing laser and the etching laser, the wavelength of the curing laser and the etching laser, the curing laser and the etching laser The irradiation time, the scan speed of the curing laser and the etching laser, and the scan width of the curing laser and the etching laser can be controlled.

In addition, the laser irradiation module may further include a telecentric lens or an array lens. In addition, the laser irradiation module may include a VCSEL (Vertical Cavity Surface Emitting Laser, vertical resonance surface emitting laser). In addition, the laser irradiation module may include a telecentric lens and a laser transmission control reticle (reticle).

The substrate cooling module is located below the substrate support for seating the substrate and can cool the substrate to a required temperature. The substrate cooling module may include a cooling passage formed in the substrate support or a cooling means positioned below the substrate support.

The gas blowing module may blow an inert gas into an area to which a curing laser and an etching laser are irradiated. The gas blowing module may include a nozzle for injecting an inert gas and a gas pipe for supplying the gas to the nozzle.

So far, the present invention has been described in detail with reference to the preferred embodiments shown in the drawings. These embodiments are not intended to limit the present invention, but are merely illustrative, and should be considered in an illustrative rather than a restrictive sense. The true technical protection scope of the present invention should be determined by the technical spirit of the appended claims rather than the above description.

10: base substrate
20a: first light emitting layer 20: first light emitting element
30a: second light emitting layer 30: second light emitting element
40a: third light emitting layer 40: third light emitting element

Claims (16)

A first light-emitting layer coating step of coating the first light-emitting layer on the upper surface of the base substrate;
A first light emitting device region curing step of selectively curing by irradiating a curing laser to a first light emitting device region forming a first light emitting device in the first light emitting layer;
forming a first light emitting device by etching the first light emitting layer while irradiating an etching laser to the upper surface of the first light emitting layer to form a first light emitting device;
A second light emitting layer coating step of coating a second light emitting layer on a region including the upper surface of the base substrate exposed to the periphery of the first light emitting device;
A second light emitting device region curing step of selectively curing by irradiating the curing laser to a second light emitting device region where a second light emitting device is formed in the second light emitting layer;
forming a second light emitting device by etching the second light emitting layer while irradiating the etching laser to the upper surface of the second light emitting layer to form a second light emitting device;
A third light emitting layer coating step of coating a third light emitting layer on a region including the upper surface of the base substrate exposed to the periphery of the first light emitting device and the second light emitting device;
A third light emitting device region curing step of selectively curing by irradiating the curing laser to a third light emitting device region where the third light emitting device is formed in the third light emitting layer;
and forming a third light emitting device by etching the third light emitting layer while irradiating the etching laser to the upper surface of the third light emitting layer. The method of claim 1,
After the third light emitting device forming step
The QLED manufacturing method according to claim 1, further comprising: etching the upper surfaces of the first light emitting element and the second light emitting element with an etching laser. 3. The method of claim 2,
The light emitting device etching step is
A QLED manufacturing method, characterized in that the upper surface of the third light emitting device is also etched with the etching laser. 3. The method of claim 2,
The first light emitting layer is coated to a thickness of 1 to 20% thicker than that of the first light emitting device, and the second light emitting layer is coated to a thickness of 1 to 20% thicker than that of the second light emitting device. 3. The method of claim 2,
The QLED manufacturing method, characterized in that the first light emitting layer and the second light emitting layer are formed to have a thickness greater than that of the third light emitting layer. 3. The method of claim 2,
The QLED manufacturing method, characterized in that the first light emitting layer and the second light emitting layer are formed to have a thickness of 1 to 20% thicker than that of the third light emitting layer. The method of claim 1,
The curing laser is a QLED manufacturing method, characterized in that the ultraviolet laser. 8. The method of claim 7,
The first light-emitting layer, the second light-emitting layer, and the third light-emitting layer are formed of a laser photoreactive quantum dot composite material including a quantum dot material, a base material, and a photoinitiator,
In the first light emitting layer, the quantum dot material is a red quantum dot material having an emission wavelength range of 570 to 780 nm, the second light emitting layer is a green quantum dot material in which the quantum dot material has an emission wavelength range of 480 to 570 nm, and the third light emitting layer is light emitting It is a blue quantum dot material with a wavelength range of 380 to 480 nm,
The base material includes a monomer and an oligomer,
The photoinitiator is a UV initiator, QLED manufacturing method, characterized in that the benzoin ether-based or amine-based. 8. The method of claim 7,
The etching laser is a QLED manufacturing method, characterized in that the visible laser or infrared laser. 10. The method of claim 9,
The first light emitting layer, the second light emitting layer, and the third light emitting layer further include a light absorbing material absorbing light of a visible light wavelength band or a light absorbing material absorbing light of an infrared wavelength band. The method of claim 1,
The etching laser is a QLED manufacturing method, characterized in that the whole is irradiated to the first light emitting layer, the second light emitting layer or the third light emitting layer. The method of claim 1,
The etch laser includes a first light emitting layer in an uncured region except for a region where the first light emitting device is formed, or a second light emitting layer or a third light emitting device in an uncured region except for a region in which the second light emitting device is formed. A method for manufacturing a QLED, characterized in that the third light emitting layer is irradiated on the uncured region except for the region to be formed. The method of claim 1,
The QLED manufacturing method, characterized in that the forming of the first light emitting element, the forming of the second light emitting element, and the forming of the third light emitting element are performed while cooling the base substrate or spraying a cooling gas onto the upper portion of the light emitting layer. The method of claim 1,
The QLED manufacturing method, characterized in that the forming of the first light emitting element, the forming of the second light emitting element, and the forming of the third light emitting element are performed while blowing an inert gas into the region to which the etching laser is irradiated. 15. A QLED manufactured by the QLED manufacturing method according to any one of claims 1 to 14. A manufacturing apparatus for applying the QLED manufacturing method according to claim 1, comprising:
A quantum dot material coating module for coating the quantum dot material on the base substrate;
a substrate cooling module located under the substrate support for seating the base substrate and cooling the base substrate to a required temperature;
a laser irradiation module for irradiating the curing laser and the etching laser; and
and a gas blowing module for blowing an inert gas into an area to which the curing laser and the etching laser are irradiated.

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