KR20210145418A - XFL lift off apparatus - Google Patents

Abstract

The present invention provides a xenon flash lamp (XFL) lift off device, which includes: a stage unit capable of positioning an object on the upper surface; and an XFL module unit positioned spaced apart from the stage unit and including one or more XFLs for irradiating light toward the object. The device can reduce the manufacturing cost and maintenance cost of a flexible electronic element.

Description

XFL lift off apparatus

The present invention relates to a lift-off device using a xenon flash lamp (XFL), and more particularly, to separate a flexible substrate from a carrier plate including a light-to-heat conversion layer, the upper or lower surface of the carrier plate is irradiated with XFL It relates to a lift-off device that can scan the surface.

Unlike glass, flexible substrates are light and impact-resistant, so there is no fear of breaking them easily. Accordingly, when a flexible electronic device including such a flexible substrate is manufactured, it can be used as a portable electronic device because it is light and not easily broken compared to a conventional glass-based electronic device, and can be designed as desired by the user. This is possible.

While the flexibility of the flexible substrate has various advantages as described above, it has various difficult problems during the actual process. First, since the flexible substrate is easily bent, it is not easy to handle, and since the substrate itself is easily bent by the heat treatment process, it is not easy to maintain the flatness of the flexible substrate. In particular, when a thin film used for a flexible electronic device is applied on a flexible substrate, this phenomenon becomes more pronounced, making it difficult to perform a post-process.

For this reason, in order to use a flexible substrate while using a flexible electronic device manufacturing technology, a transferable support substrate that can sufficiently support the flexible substrate is attached to the lower portion of the flexible substrate so that the use of the flexible substrate is easy and handling is easy. will proceed with Recently, in order to separate the support substrate and the flexible substrate such as plastic, a method of separating the flexible substrate by forming a sacrificial layer under the flexible substrate or using a laser lift-off device has been used.

When the flexible substrate is separated using the laser lift-off device, high energy laser light is irradiated to the flexible substrate surface, and the flexible substrate absorbs the laser light to cause thermal damage, so that the flexible substrate is absorbed A laser light in the ultraviolet region that can do this is required, and a high-energy laser light is required to secure a high process speed.

In particular, in the case of laser lift-off (LLO) technology using an excimer laser, high power can be easily secured, but the initial equipment investment cost is high, _{and expensive gases such as chlorine (Cl 2} ) and xenon (Xe) are required. Since expensive consumable parts such as an optical amplifier tube and high reflectivity are required, there is a disadvantage that a large amount of cost is required for maintenance and repair.

In a method of manufacturing a flexible electronic device, there is a need for a new lift-off device that can reduce manufacturing and maintenance costs by not using expensive equipment, can reduce thermal damage to a flexible substrate, and ensure high process speed do.

Republic of Korea Patent Registration No. 10-1172791

In order to solve the problems of the prior art described above, the present invention is a stage unit capable of positioning an object on the upper surface; and an XFL module unit positioned spaced apart from the stage unit and including one or more xenon flash lamps (XFL) for irradiating light toward the object; An object of the present invention is to provide an XFL lift-off device comprising a.

In addition, the present invention comprises the steps of preparing a subject; positioning the object on a stage; fixing the stage to a stage fixing device; and irradiating light on an upper surface or a lower surface of the object to lift off the object; Another object of the present invention is to provide a lift-off method of a flexible substrate comprising a.

One aspect of the present invention for achieving the above object, the stage unit capable of positioning the object on the upper surface; and an XFL module unit positioned spaced apart from the stage unit and including one or more xenon flash lamps (XFL) for irradiating light toward the object; It provides an XFL lift-off device comprising a.

In an embodiment of the present invention, the stage unit includes a first through hole, and includes a first seating groove and a window for mounting a window under the first through hole, and positions the object on the upper portion of the window. a stage in the form of a frame that can be made; and a plate-shaped stage fixing device including a second through hole and including a second seating groove in which the stage can be mounted under the second through hole.

In an embodiment of the present invention, the window may include a transmissive material capable of transmitting a wavelength of 100 nm or more.

In one embodiment of the present invention, the one or more xenon flash lamps may be arranged in multiple rows.

In an embodiment of the present invention, the object includes a carrier plate including a support substrate and a light to heat conversion layer (LTHC) positioned on the support substrate; a flexible substrate positioned on the carrier plate; and an electronic device layer positioned on the flexible substrate.

In an embodiment of the present invention, the XFL lift-off device may separate the carrier plate and the flexible substrate by performing a surface scan.

One aspect of the present invention comprises the steps of preparing a subject; positioning the object on a stage; fixing the stage to a stage fixing device; and irradiating light on an upper surface or a lower surface of the object to lift off the object; It provides a lift-off method of a flexible substrate comprising a.

In one embodiment of the present invention, the lifting off step may be performed by scanning the surface of the stage unit or the XLF module unit moving left and right.

In an embodiment of the present invention, the moving speed of the stage unit or the XFL module unit may be 1 mm/s to 500 mm/s.

In one embodiment of the present invention, in the lifting-off step, the pulse width of the irradiated light may be 0.1 ms to 50 ms.

In an embodiment of the present invention, in the lifting-off step, the energy per pulse of the irradiated light may be 1 J/cm ² to 15 J/cm ² .

In an embodiment of the present invention, in the lifting-off step, the frequency of the irradiated light may be 1 Hz to 50 Hz.

The above-described XFL lift-off apparatus of the present invention is inexpensive compared to the conventional laser lift-off apparatus, and has an economical advantage because it is possible to reduce the manufacturing cost and maintenance cost of the flexible electronic device.

In addition, the XFL lift-off method of the present invention can reduce thermal damage to the flexible substrate when the carrier plate and the flexible substrate are separated, and a surface scan method of a xenon flash lamp (XFL) rather than a line scan method such as a laser As it is carried out by this, a high process speed can be secured.

It should be understood that the effects of the present invention are not limited to the above-described effects, and include all effects that can be inferred from the configuration of the invention described in the detailed description or claims of the present invention.

1 and 2 are a front view ( FIG. 1 ) and a side view ( FIG. 2 ) of an XFL lift-off device 1 of the present invention, respectively.
It is a schematic diagram of the stage part of the XFL lift-off apparatus of this invention.
It is a schematic diagram of the XFL module part of the XFL lift-off apparatus of this invention.
5 is a schematic diagram when an XFL lift-off device is driven according to an embodiment of the present invention.
6 is a schematic diagram of an object according to an embodiment of the present invention.
7 is a schematic diagram of a cross-section of a carrier plate according to an embodiment of the present invention.
8 is a schematic diagram illustrating an absorption coefficient in a complex refractive index according to an embodiment of the present invention.
9 is a schematic diagram of a cross-section of a carrier plate when light is irradiated according to an embodiment of the present invention.
10 is a schematic diagram of a cross-section of an electronic device layer according to an embodiment of the present invention.
11 is a flowchart of a method for lifting off a flexible substrate according to the present invention.
12 is a flowchart of a specific process of preparing an object of the present invention.
13 is a flowchart (a) of a specific process of forming a flexible substrate of the present invention and a flowchart (b) of a specific process of forming an electronic device layer, respectively.
14 is a schematic diagram of a lift-off step of the present invention.
15 is a schematic diagram of a top-down light irradiation method (a) and a bottom-up light irradiation method (b) in the lift-off method of the flexible substrate of the present invention.
16 and 17 are schematic diagrams of a lift-off process through a surface scan according to an embodiment of the present invention.
18 is a schematic diagram (a) of a carrier plate according to an embodiment of the present invention and a graph (b) of observing light absorption characteristics of the carrier plate.
19 is a photograph of a lower surface (a) and an upper surface (b) of a carrier plate according to an embodiment of the present invention, a photograph of an upper surface (c) of a PI-coated carrier plate, and an upper surface of the separated carrier plate after the lift-off process; and a photograph (d) of the PI film.

Hereinafter, the present invention will be described with reference to the accompanying drawings. However, the present invention may be embodied in several different forms, and thus is not limited to the embodiments described herein. And in order to clearly explain the present invention in the drawings, parts irrelevant to the description are omitted, and similar reference numerals are attached to similar parts throughout the specification.

Throughout the specification, when a part is “connected (connected, contacted, coupled)” with another part, it is not only “directly connected” but also “indirectly connected” with another member interposed therebetween. "Including cases where In addition, when a part "includes" a certain component, this means that other components may be further provided without excluding other components unless otherwise stated.

The terms used herein are used only to describe specific embodiments, and are not intended to limit the present invention. The singular expression includes the plural expression unless the context clearly dictates otherwise. In this specification, terms such as "comprises" or "have" are intended to designate that the features, numbers, steps, operations, components, parts, or combinations thereof described in the specification exist, but one or more other features It should be understood that this does not preclude the existence or addition of numbers, steps, operations, components, parts, or combinations thereof.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 and 2 are a front view ( FIG. 1 ) and a side view ( FIG. 2 ) of an XFL lift-off device 1 of the present invention, respectively.

1 and 2, the XFL lift-off apparatus 1 of the present invention includes a stage 100 capable of positioning an object 2 on an upper surface; and an XFL module unit 200 including one or more xenon flash lamps (XFL) 210 positioned spaced apart from the stage unit 100 and irradiating light toward the object 2; do.

First, the XFL lift-off apparatus 1 of the present invention includes a stage unit 100 capable of positioning the object 2 on the upper surface of the XFL lift-off apparatus 1 .

3 : is a schematic diagram of the stage part 100 of the XFL lift-off apparatus 1 of this invention.

Referring to FIG. 3 , the stage unit 100 includes a first through hole 111 , and a first seating groove 112 in which the window 113 can be mounted under the first through hole 111 . and a frame-shaped stage 110 including a window 113 and capable of positioning the object 2 on the window 113; and a second through-hole 121, and a plate-shaped stage fixing device 120 including a second seating groove 122 in a lower portion of the second through-hole 121 for mounting the stage 110. ); includes.

In one embodiment of the present invention, the stage part 100 is a place where the object 2 can be positioned, and it is characterized in that it has an open shape including the first through hole 111 and the second through hole 121 . do it with

In addition, the object 2 is positioned above the window 113 included in the stage 110 , and the window 113 passes through the light irradiated from the XFL module 200 to be described later to the object. In order to be effectively transmitted to the lower part of (2), a transmissive material capable of transmitting a wavelength of about 100 nm or more may be included.

For example, the transparent material constituting the window 113 may be MgF ₂ or SiO ₂ (quartz), but is not limited thereto.

In an embodiment of the present invention, the stage unit 100 may be exchanged according to the type of the object 2 .

For example, depending on the size of the object 2 , the size of the stage 110 , and the size of the stage 110 , the first through-hole 111 , the second through-hole 121 , and the stage The size of the fixing device 120 and the window 113 may be different.

Next, the XFL lift-off device 1 of the present invention is positioned spaced apart from the stage 100 and includes one or more xenon flash lamps (XFL) 210 irradiating light toward the object 2 . It includes an XFL module unit 200 .

4 is a schematic diagram of the XFL module unit 200 of the XFL lift-off device 1 of the present invention.

Referring to FIG. 4 , the XFL module unit 200 of an embodiment of the present invention may include one or more xenon flash lamps (XFLs) 210, and the XFLs 210 may be arranged in multiple columns, and , the XFL 210 may be arranged such that a light overlapping portion 212 in which the light distribution 211 irradiated to the object overlaps is formed.

When the area of the object 2 increases, there may be a limit in which the length of the XFL 210 cannot be infinitely increased depending on the area to which light is irradiated. In order to solve this, by disposing multiple XFLs 210 in multiple columns, it is possible to uniformly scan the large area object 2 .

In one embodiment of the present invention, the stage unit 100 or the XFL module unit 200 can be moved left and right in order to uniformly irradiate the XFL to the large-area object 2 to perform a uniform scan.

The stage unit 100 may further include a stage driving unit (not shown) capable of moving the stage unit 100 left and right at a constant speed, and the XFL module unit 200 controls the pulse and frequency of the XFL. An adjustable control unit (not shown), an XFL module driving unit (not shown) capable of moving the XFL module unit 200 from side to side at a constant speed, and a reflection unit 220 for reflecting the light irradiated from the XFL are further added. may be included.

Fig. 5 is a schematic diagram when the XFL lift-off device 1 is driven according to an embodiment of the present invention.

Referring to FIG. 5 , the XFL module unit 200 is fixed, the stage unit 100 is moved left and right, and the lower portion of the object 2 can be scanned (Fig. 5a), or the The stage unit 100 is fixed, the XFL module unit 200 is moved left and right, and the lower part of the object 2 may be scanned ( FIG. 5 b ).

FIG. 5 shows a method in which the stage unit 100 or the XFL module unit 200 moves left and right to scan a surface, but the stage unit 100 and the XFL module unit 200 are movable. It is not limited to an Example. A more detailed description is set forth in the following aspects.

6 is a schematic diagram of an object 2 that is lifted off when the XFL lift-off device 1 of the present invention is driven.

Referring to FIG. 6 , the object 2 includes a carrier plate 10 including a support substrate 11 and a light to heat conversion (LTHC) 12 positioned on the support substrate 11 . ; a flexible substrate 20 positioned on the carrier plate 10; and an electronic device layer 30 positioned on the flexible substrate 20 .

First, the object 2 of the present invention includes a carrier plate 10 .

In the present specification, the carrier plate 10 refers to a substrate that is bonded to the flexible substrate 20 to facilitate use and handling of the flexible substrate 20 in manufacturing the flexible electronic device. The carrier plate 10 should be able to sufficiently support the flexible substrate 20 and be transportable, and in one embodiment of the present invention, the carrier plate 10 is the XFL lift-off device 1 of the present invention. As a surface to be scanned during driving, it means a substrate separated from the flexible substrate 20 as a result of driving the XFL lift-off device 1 .

7 is a schematic diagram of a cross-section of a carrier plate 10 according to an embodiment of the present invention.

Referring to FIG. 7 a), the carrier plate 10 includes a support substrate 11; a light-to-heat conversion layer 12 positioned on the support substrate 11; and a protective layer 13 positioned on the light-to-heat conversion layer 12 .

First, the carrier plate 10 includes a support substrate 11 . The support substrate 11 may sequentially stack a light-to-heat conversion layer 12 and a protective layer 13 thereon, and the lower surface of the support substrate 11 corresponds to a light-irradiated surface directly irradiated with XFL. . Accordingly, the support substrate 11 may have light transmittance, and the material of the support substrate 11 may be a material through which light is transmitted, for example, a glass substrate or a quartz substrate.

Next, the carrier plate 10 includes a light-to-heat conversion layer (12). The light-to-heat conversion layer 12 is formed on the support substrate 11, and when light is irradiated to a specific point of the light-to-heat conversion layer 12, the light is absorbed by the light-to-heat conversion layer 12 to generate heat. can occur For example, the light-to-heat conversion layer 12 may absorb 90% or more of the light irradiated from the XFL of the present invention and convert it into heat.

In an embodiment of the present invention, heat generated by the photothermal conversion layer 12 may separate the flexible substrate 20 and the carrier plate 10 from each other.

Referring to FIG. 7 b , in an embodiment of the present invention, the photothermal conversion layer 12 may include a metal layer 12a.

In one embodiment of the present invention, the light-to-heat conversion layer 12 may be formed in a single-layer structure of the metal layer (12a).

In this case, the thickness of the metal layer 12a is preferably set to 10 nm to 500 nm. When the thickness of the metal layer 12a is less than 10 nm, the light transmittance is high, and the light irradiated from the XFL may damage the device substrate.

In one embodiment of the present invention, the metal layer 12a is a metal capable of absorbing broadband visible light (350 nm to 800 nm), for example, molybdenum (Mo), chromium (Cr), It may be made of any one of titanium (Ti), tin (Sn), tungsten (W), iridium (Ir), cobalt (Co), nickel (Ni), and an alloy including one or more of these metals.

Referring to FIG. 7 c), in an embodiment of the present invention, the photothermal conversion layer 12 includes a structure in which a first metal layer 12b, a buffer layer 12c, and a second metal layer 12d are sequentially stacked. can do.

In one embodiment of the present invention, the thickness of the first metal layer 12b may be thinner than the thickness of the second metal layer 12d, and the first metal layer 12b and the second metal layer 12d have a complex refractive index. A product (nxk) of a refractive index (n) and an extinction coefficient (k) may be 2 or more at 550 nm.

In an embodiment of the present invention, the first metal layer 12b and the second metal layer 12d have a complex refractive index consisting of a refractive index (n) and an extinction coefficient (k) = n + It can be expressed as a jk value.

8 shows the absorption coefficient in the complex refractive index when the thickness of each metal is 10 nm at a wavelength of 550 nm.

Referring to FIG. 8 , as the product (nxk) of a refractive index (n) and an extinction coefficient (k) in the complex refractive index increases, the light absorptance increases and the broadband visible light (350 nm to 800 nm), it can be seen that it has a high light absorptivity characteristic.

In an embodiment of the present invention, the product (nxk) of a refractive index (n) and an extinction coefficient (k) in a complex refractive index of the first metal layer 12b and the second metal layer 12d is 550 nm may be 2 or more, and thus may have a characteristic of high light absorptivity.

In one embodiment of the present invention, the thickness of the first metal layer 12b and the second metal layer 12d may be 1 nm to 20 nm, respectively, and the thickness of the second metal layer 12d is the first metal layer for a reflective role. It may be thicker than (12b).

In an embodiment of the present invention, the first metal layer 12b and the second metal layer 12d are a metal capable of absorbing broadband visible light (350 nm to 800 nm), for example, molybdenum. (Mo), chromium (Cr), titanium (Ti), tin (Sn), tungsten (W), iridium (Ir), cobalt (Co), nickel (Ni), and any one of alloys containing one or more of these metals It may be composed of one material.

In an embodiment of the present invention, the first metal layer 12b and the second metal layer 12d may include the same metal, but may include different types of metal.

In one embodiment of the present invention, a buffer layer 12c may be included between the first metal layer 12b and the second metal layer 12d.

In an embodiment of the present invention, the buffer layer 12c is selected from the group consisting of a transparent oxide, for example, a silicon oxide film, a silicon nitride film or a silicon oxynitride film, aluminum oxide (Al ₂ O ₃ ), ITO, and combinations thereof. It may include any one of the

9 is a schematic diagram of a cross-section of the carrier plate 10 when light is irradiated in one embodiment of the present invention.

Referring to FIG. 9 , in one embodiment of the present invention, the light-to-heat conversion layer 12 maximizes light absorption in the optimal conditions of optical interference, absorption and dispersion of the metal layer. can

For example, the second metal layer 12d is a thicker metal layer than the first metal layer 12b and mainly plays a reflective role, and the buffer layer 13 is a phase-matching layer of the phase of light reflected from the second metal layer ( phase) may play a role. In this case, the first metal layer 12b is a thin metal layer compared to the second metal layer 12d, and transmission, reflection, and absorption may occur.

In one embodiment of the present invention, the intensity of the light reflected from the first metal layer 12b (① and ② in FIG. 9) and the intensity of the light reflected from the second metal layer 12d (③ in FIG. 9) are the same and by adjusting the thickness of the buffer layer 13 to make a phase difference of 180 degrees to minimize the intensity of light reflected between the first metal layer 12b and the support substrate 11, for example, it can be made to 0, and through this light absorption can be maximized.

Referring to FIG. 7d), the photothermal conversion layer 12 may include a pattern layer 12e between the support substrate 11 and the first metal layer 12b.

The pattern layer 12e is for improving the uniformity of large-area lift-off when the XFL lift-off device 1 of the present invention is driven, and a pattern may be formed of aluminum (Al) or silver (Ag), but this It is not limited.

Next, the carrier plate 10 includes a protective layer 13 . The flexible substrate 20 is directly coated on the upper surface of the protective layer 13 to prevent damage to the lower layer of the flexible substrate 20 .

In addition, the protective layer 13 is laminated on the upper surface of the light-to-heat conversion layer 12, and prevents the surface of the light-to-heat conversion layer 12 from being exposed and oxidized. Accordingly, the carrier plate 10 may be reusable.

In an embodiment of the present invention, the protective layer 13 is, for example, a silicon oxide film, a silicon nitride film or a silicon oxynitride film, aluminum oxide (Al ₂ O ₃ ), any one selected from the group consisting of ITO and combinations thereof may contain one.

Next, the object 2 of the present invention includes the flexible substrate 20 positioned on the carrier plate 10 described above. The flexible substrate 20 may be a thin glass substrate, a metal foil substrate, or a polymer (plastic) substrate, for example, PET (polyethylene terephthalate), polyester, PC (Polycarbonate), PI (polyimide), Any one polymer selected from the group consisting of PEN (polyethylene naphthalate), PEEK (polyether ether ketone), PAR (polyarylate), PCO (polycylicolefin), polyorbornene, PES (polyethersulphone) and COP (cycloolefin polyer) may include, but is not limited to.

Next, the object 2 of the present invention includes an electronic device layer 30 positioned on the flexible substrate 20 .

10 is a schematic diagram of a cross-section of an electronic device layer 30 according to an embodiment of the present invention.

Referring to FIG. 10 , the object 2 may be an electronic device layer 30 including an OLED electronic device, and the electronic device layer 30 includes a barrier layer 31 , a TFT layer 32 , and an OLED layer. (33) and a TFE layer (34).

In one embodiment of the present invention, the barrier layer 31 may mean a layer having a barrier to the permeation of oxygen, moisture, nitrogen oxide, sulfur oxide or ozone in the atmosphere. The material of the barrier layer 31 may be a material having a function of preventing substances that promote device deterioration, such as moisture and oxygen, from entering the device, for example, In, Sn, Pb, Au, Cu, Ag. , metals such as Al, Ti and Ni; TiO, TiO ₂ , Ti ₃ O ₃ , Al ₂ O ₃ , MgO, SiO, SiO ₂ , GeO, NiO, CaO, BaO, Fe ₂ O ₃ , Y ₂ O ₃ , ZrO ₂ , Nb ₂ O ₃ and CeO ₂ and metal oxides such as; metal nitrides such as SiN; metal oxynitrides such as SiON; metal fluorides such as MgF ₂ , LiF, AlF ₃ and CaF _{2 ;} may include The thickness of the barrier layer 3a is not particularly limited and may be appropriately selected depending on the intended use.

In addition, the TFT (Thin Film Transistor) of the TFT layer 32 means a thin film transistor. The TFT is a type of small semiconductor and refers to an element that controls an electrical signal to act as a switch, and may include, for example, a pixel electrode.

In addition, the OLED (Organic Light Emitting Diodes) of the OLED layer 33 means a device that expresses an image using an organic light emitting material in a pixel, which is a basic unit of a display, and uses an organic material that emits light when current flows. It uses a method of emitting light.

In addition, the TFE layer 34 may have a structure in which an organic layer and an inorganic layer are stacked in a multilayer structure, in this case, the organic layer is an acrylate-based material, and the inorganic layer is one selected from SiO₂, SiNx, and Al₂O₃. It may be a material of

One aspect of the present invention provides a lift-off method of the flexible substrate 20 .

11 is a flowchart of a lift-off method of the flexible substrate 20 of the present invention.

Referring to FIG. 11 , the lift-off method of the flexible substrate 20 according to the present invention includes the steps of preparing an object 2 ( S100 ); positioning the object 2 on the stage 110 (S200); fixing the stage 110 to the stage fixing device 120 (S300); and irradiating light on the upper or lower surface of the object 2 to lift off the object 2 (S400).

First, the lift-off method of the flexible substrate 20 of the present invention includes the step of preparing the object 2 ( S10 ).

In one embodiment of the present invention, the object 2 may be the object 2 described in the above aspect, for example, it may be for manufacturing an OLED device including the OLED layer 33 .

12 is a flowchart of a specific process of preparing the object 2 ( S100 ).

Referring to FIG. 12 , the step of preparing the object 2 ( S100 ) includes providing a carrier plate 10 ( S110 ); forming a flexible substrate 20 (S120); and forming the electronic device layer 30 (S130).

First, preparing the object 2 ( S100 ) includes providing the carrier plate 10 ( S110 ).

The carrier plate 10 refers to a substrate that is bonded to the flexible substrate 20 to facilitate use and handling of the flexible substrate 20 in manufacturing a flexible electronic device. The carrier plate 10 should be able to sufficiently support the flexible substrate 20 and be transportable. In one embodiment of the present invention, the carrier plate 10 is the XFL lift-off device 1 of the present invention. As a surface to be scanned during driving, it means a substrate that is separated from the flexible substrate 20 as a result of driving the XFL lift-off device 1 .

Referring to FIG. 7 a), the carrier plate 10 includes a support substrate 11; a light-to-heat conversion layer 12 positioned on the support substrate 11; and a protective layer 13 positioned on the light-to-heat conversion layer 12 .

A detailed description of each configuration of the carrier plate 10 is replaced with that described in the above aspect.

Next, the step of preparing the object 2 ( S100 ) includes forming the flexible substrate 20 on the upper surface of the carrier plate 10 ( S120 ).

In an embodiment of the present invention, the flexible substrate 20 may correspond to a substrate of an electronic device manufactured by being lifted off according to an embodiment of the present invention, and the flexible substrate 20 is, for example, a thin It may be a glass substrate, a metal foil substrate, or a polymer (plastic) substrate, for example, PET (polyethylene terephthalate), polyester, PC (polycarbonate), PI (polyimide), PEN (polyethylene naphthalate), PEEK ( Polyether ether ketone), PAR (polyarylate), PCO (polycylicolefin), polynorbornene (polyorbornene), PES (polyethersulphone) and COP (cycloolefin polyer) may include any one polymer selected from the group consisting of, but is not limited thereto. it is not

13A is a flowchart of a specific process of forming the flexible substrate 20 ( S120 ).

13 a), forming the flexible substrate 20 (S120) may include coating a liquid polymer (S121) and curing the coated liquid polymer (S122). can

In one embodiment of the present invention, the flexible substrate may include, for example, PI, for example, after directly coating PAA (poly amic acid) on the upper surface of the carrier plate 20, it is already It can be cured to form the flexible substrate 20 including PI.

The PI has a relatively low crystallinity or mostly amorphous structure, is easy to synthesize, can make a thin film, and does not require a crosslinking group for curing, as well as excellent heat resistance and chemical resistance due to transparency and a rigid chain structure, It is a polymer material with excellent mechanical properties, electrical properties and dimensional stability.

In a specific embodiment of the present invention, the PAA may be obtained by reacting a diamine monomer and a dianhydride monomer at a molar ratio of about 1.0: 1.05 at room temperature.

In a specific embodiment of the invention, the obtained PAA may be coated on the upper surface of the carrier plate 10, and the PAA-coated upper surface of the carrier plate 10 is heat treated to imide-cured, and the upper surface of the flexible substrate A carrier plate 10 coated with (20) can be obtained.

Next, the step of preparing the object 2 ( S100 ) includes forming the electronic device layer 30 on the flexible substrate 10 ( S130 ). In an embodiment of the present invention, the flexible electronic device manufactured by being lifted off may be an organic light emitting diode (OLED).

13 b) is a flowchart of a specific process of forming the electronic device layer 30 (S130).

Referring to FIG. 13 b), the step of forming the electronic device layer 30 (S130) may include forming a barrier layer 31 on the flexible substrate 20 (S131); forming a TFT layer 32 on the barrier layer 31 (S132); forming an OLED layer 33 on the TFT layer 32 (S133); forming a TFE layer 34 on the OLED layer 33 (S134); may include.

First, forming the electronic device layer 30 ( S130 ) may include forming a barrier layer 31 on the flexible substrate 20 ( S131 ).

The step (S131) of forming the barrier layer 31 may be performed, for example, by a process such as sputtering, PECVD, ALD, etc., but if it is obvious to a person skilled in the art to which this specification belongs , but not limited thereto.

For example, the barrier layer 31 may mean a layer that prevents the permeation of oxygen, moisture, nitrogen oxide, sulfur oxide, or ozone in the atmosphere. The material of the barrier layer 31 may be a material having a function of preventing substances that promote device deterioration, such as moisture and oxygen, from entering the device, for example, In, Sn, Pb, Au, Cu, Ag. , metals such as Al, Ti and Ni; TiO, TiO ₂ , Ti ₃ O ₃ , Al ₂ O ₃ , MgO, SiO, SiO ₂ , GeO, NiO, CaO, BaO, Fe ₂ O ₃ , Y ₂ O ₃ , ZrO ₂ , Nb ₂ O ₃ and CeO ₂ and metal oxides such as; metal nitrides such as SiN; metal oxynitrides such as SiON; metal fluorides such as MgF ₂ , LiF, AlF ₃ and CaF _{2 ;} may include The thickness of the barrier layer 31 is not particularly limited and may be appropriately selected according to its intended use.

Next, the step of forming the electronic device layer 30 ( S130 ) of the present invention may include the step ( S132 ) of forming the TFT layer 32 on the barrier layer 31 .

The TFT (Thin Film Transistor) means a thin film transistor. The TFT is a type of small semiconductor and refers to an element that controls an electrical signal to act as a switch, and may include, for example, a pixel electrode.

Forming the TFT layer 32 ( S132 ) is not limited as long as it is obvious to a person skilled in the art to which this specification belongs.

Next, the step of forming the electronic device layer 30 of the present invention (S130) includes the step of forming the OLED layer 33 on the TFT layer 32 (S133).

The OLED (Organic Light Emitting Diodes) refers to a device that uses an organic light emitting material to express an image in a pixel, which is the basic unit of a display, and uses a method of emitting light using an organic material that emits light when current flows. .

In one embodiment of the present invention, the step (S133) of forming the OLED layer 33 may be formed by depositing an organic fluorescent material on the pixel electrode of the TFT layer 32 by an evaporation method, but to which this specification belongs If it is obvious to those of ordinary skill in the art, the present invention is not limited thereto.

Next, the step of forming the electronic device layer 30 of the present invention (S130) includes the step of forming the TFE layer 34 on the OLED layer 33 (S134).

The step of forming the TFE layer 34 is performed through an encapsulation process. The encapsulation process is a process for protecting the organic material and electrode inside the OLED device formed in the step (S133) of forming the OLED layer 33 from oxygen and moisture in the atmosphere.

In an embodiment of the present invention, the TFE layer 34 may have a structure in which an organic layer and an inorganic layer are stacked in a multi-layer structure, in this case, the organic layer is an acrylate-based material, and the inorganic layer is SiO₂, It may be one material selected from SiNx and Al₂O₃.

The step of forming the TFE layer 34 ( S134 ) may be performed through ALD, but is not limited thereto as long as it is obvious to a person skilled in the art to which this specification belongs.

Next, the lift-off method of the flexible substrate 20 of the present invention includes the steps of positioning the object 2 on a stage 110 ( S200 ); and fixing the stage 110 to the stage fixing device 120 ( S300 ) and lifting off the object 2 by irradiating light to the upper or lower surface of the object 2 ( S400 ).

14 is a schematic diagram of the lifting-off step (S400) of the present invention, and FIG. 15 is a schematic diagram of a top-down light irradiation method (a) and a bottom-up light irradiation method (b) in the lift-off method of a flexible substrate of the present invention .

Referring to FIG. 14 , the XFL 210 included in the XFL module unit 200 of the XFL lift-off device 1 of the present invention is laminated with the flexible substrate 20 of the carrier plate 10 of the object 2 . When light is irradiated toward a surface opposite to the surface to be used, the flexible substrate 20 may be separated from the carrier plate 10 in the object 2 .

15, in the lifting-off step (S400), the light irradiation method may be performed in a top-down (Fig. 15a) or bottom-up (Fig. 15b), depending on the light irradiation method, the stage ( In the step ( S200 ) of positioning the object 2 on the stage 110 , a method in which the object 2 is positioned on the stage 110 may vary.

For example, the surface of the carrier plate 10 of the object 2 on which the flexible substrate 20 is laminated may be positioned under the stage 110 . When the object 2 is positioned on the stage 110 in this form, a surface scan may be possible by uniformly irradiating light to the object 2 through a top-down light irradiation method (FIG. 15a).

As another example, the object 2 may be positioned in the carrier plate 10 such that a surface opposite to the surface on which the flexible substrate 20 is laminated is positioned below the stage 110 . When the object 2 is positioned on the stage 110 in this form, a surface scan may be possible by uniformly irradiating light to the object 2 through a bottom-up light irradiation method (FIG. 15b).

The carrier plate 10 means a surface to be scanned when the XFL lift-off device 1 of the present invention is driven.

Accordingly, in the lifting-off step ( S400 ), the upper surface of the object 2 is located at the lower portion of the stage 110 , in which the surface on which the flexible substrate 20 of the carrier plate 10 is laminated is located on the upper surface of the carrier plate 10 . In this case, it may be a surface of the carrier plate 10 exposed to light irradiated by a top-down light irradiation method.

In addition, in the lifting-off step ( S400 ), the lower surface of the object 2 is the opposite surface to the surface on which the flexible substrate 20 of the carrier plate 10 is laminated in the other embodiment of the stage 110 . ), it may be a surface of the carrier plate 10 that passes through the window 113 of the stage 110 and is exposed to light irradiated by a bottom-up light irradiation method.

In an embodiment of the present invention, the lifting off step ( S400 ) may be performed due to thermal energy of the XFL.

For example, when light by the XFL 210 is irradiated to the object 2, the light to heat conversion layer 12 including the object 2 converts the light into thermal energy, and the thermal energy is the protection The flexible substrate 20 stacked on the upper surface of the layer 13 is heated, and due to the heating, the flexible substrate 20 can be momentarily separated from the carrier plate 10 .

In an embodiment of the present invention, the carrier plate 10 and the flexible substrate 20 may be separated by adjusting a driving waveform of the irradiated light. For example, the pulse width of the XFL to be irradiated may be 0.1 ms to 50 ms, in this case, the energy per pulse may be 1 J/cm ² to 15 J/cm ² , and the frequency is 1 Hz to It may be 50 Hz.

In an embodiment of the present invention, the lifting off step (S400) may be performed by scanning the surface of the stage unit 100 or the XLF module unit 200 by moving left and right, and in this case, the XFL module unit 200 ) or the moving speed of the stage unit 100 may be 1 mm/s to 500 mm/s.

16 and 17 are schematic diagrams of a lift-off process through a surface scan according to an embodiment of the present invention.

Specifically, FIG. 16 is a schematic view of irradiating light in a bottom-up method, fixing the XFL module unit 200, and moving the stage unit 100. The XFL module unit 200 includes three XFLs 210a. , 210b and 220c), and the stage unit 100 may include an object 2, wherein the object 2 is a lift-off area _{of A 1} , A ₂ and A _{3 and each light.} The distribution 211 may include an overlapping light overlapping portion 212 . 16 is a schematic diagram of the XFL lift-off device 1 viewed from the side, and the following upper and lower surfaces may correspond to the left and right directions when the XFL lift-off device 1 is viewed from the front.

When the lift-off method of the present invention is described in detail with reference to FIG. 16, the stage unit 100 moves to the upper surface with reference to FIG. 16 at a speed of 1 mm/s to 500 mm/s, and at the same time, When the XFL 210a irradiates light with a frequency of 1 Hz to 50 Hz, the irradiated light has a light distribution 211 over the _{A 1 area, and the A 1} area of the object 2 undergoes a lift-off process. can proceed.

Next, the stage unit 100 moves to the lower surface at a speed of 1 mm/s to 500 mm/s with reference to FIG. 16 and at the same time XFL (210b) irradiates light with a frequency of 1 Hz to 50 Hz When the light is irradiated to have the light distribution 211 over the area a ₂ and a ₂ zone of the target object (2) it can proceed the lift-off process.

Subsequently, the stage unit 100 moves to the upper surface at a speed of 1 mm/s to 500 mm/s with reference to FIG. 16 , and at the same time, the XFL 210c emits light at a frequency of 1 Hz to 50 Hz. When irradiated, the irradiated light has a light distribution 211 over area _{A 3} , and a lift-off process may be performed on area _{A 3 of the object 2 .}

At this time, A ₁ and A ₂ , A- ₂ and A ₃ preferably include a light overlapping portion 212 in which the irradiated light overlaps, and each of the XFLs 210a, 210b and 210c is the lift. In the turning off step ( S400 ), the object 2 may be positioned to include the light overlapping part 212 .

Specifically, FIG. 17 is a schematic view of irradiating light in a top-down method, fixing the XFL module unit 200, and moving the stage unit 100, wherein the XFL module unit 200 includes one XFL (210). ), and the stage unit 100 may include an object 2 , wherein the object 2 is _{a lift-off area of B 1} , B ₂ , B ₃ and B ₄ and a light distribution of each. 211 may include an overlapping light overlapping portion 212 .

When the lift-off method of the present invention is described in detail with reference to FIG. 17 , first, _{the stage unit 100 is positioned so that the B 1} region is located on the lower surface of the XFL module unit 200 , and then the light is emitted from the XFL. began to examine, by moving to the left side of the stage unit 100, based on the 17 bottom surface of the object (2) B _1, B _2, B ₃ and B ₄ zone wherein the XFL module 200 to This may be performed by sequentially irradiating light to the areas B ₁ , B ₂ , B _{3 ,} and B _{4 , and lifting them off.}

In this case, B ₁ and B ₂ , B _-2 and B _{3 ,} and B ₃ and B ₄ preferably include a light overlapping portion 212 in which the irradiated light overlaps, and the light overlapping portion 212 . In order to include, when the width of the light distribution 211 of the light irradiated by the XFL is, for example, D mm, the moving speed of the stage unit 100 may be d mm/s (in this case, D > d). have.

Conventionally, in the process of separating the carrier plate 10 and the flexible substrate 20 for manufacturing a flexible electronic device, a method of forming a sacrificial layer under the flexible substrate 20 or irradiating a laser, UV, etc. was performed. .

In the lift-off method of the present invention, using the XFL lift-off device 1 of the present invention, large-area irradiation is possible, and it can be quickly separated using the photothermal conversion layer 12 . In addition, the carrier plate 10 separated from the flexible substrate 20 through the method of the present invention can prevent the light-to-heat conversion layer 12 from being exposed to the outside due to the protective layer 13, thereby, The carrier plate 10 may be recycled.

Therefore, the XFL lift-off device 1 of the present invention is inexpensive compared to the conventional laser lift-off device, and it is possible to reduce the manufacturing cost and maintenance cost of the flexible electronic device, thereby having economic advantages, and the XFL lift-off method of the present invention When the silver carrier plate 10 and the flexible substrate 20 are separated, thermal damage to the flexible substrate 10 can be reduced, and the surface scan method of the xenon flash lamp 210 rather than the line scan method such as laser As it is carried out by this, a high process speed can be secured.

Example

Preparation Example 1.

_{5 nm of Mo as a first metal layer, 90 nm of SiO 2} as a buffer layer, 200 nm of Mo as a second metal layer, and 200 nm of 200 nm as a protective layer were sequentially stacked on an upper portion of a support substrate, which is a glass substrate, to fabricate a carrier plate, schematic diagram is shown in FIG. 18 a).

Experimental Example 1. Light absorption characteristics

In order to measure the light absorptivity of the carrier plate prepared in Preparation Example 1, XFL was irradiated with different wavelengths, and the absorptivity according to the wavelength was irradiated, and the results are shown in FIG. 18 b).

Referring to FIG. 18 b), when a light source having a wavelength of about 450 nm or more was irradiated, it was confirmed that the light absorption rate was about 90% or more, and the light absorption rate was 95% or more in the visible light band wavelength. Therefore, it can be seen that the light reflected between the first metal layer and the support substrate becomes almost 0, and a reflectance of about 4% is formed between the air layer (Air) and the support substrate.

Experimental Example 2. Desorption of the flexible substrate

In order to test whether the flexible substrate is detached or not, PI was coated on the carrier plate prepared in Preparation Example 1, and a lift-off process was performed using the XFL lift-off apparatus of the present invention.

The PI-coated carrier plate is placed on the stage with the supporting substrate surface facing the lower surface, fixed to the stage fixing device, the stage is moved left and right, and the XFL of the XFL module is directed toward the lower surface of the carrier plate under the following conditions The surface was scanned with: Voltage: 500V, Pulse Width: 5ms, Frequency: 1 Hz, Pulse Count: 1 EA

19 is a photograph of the lower surface (a) and the upper surface (b) of the carrier plate manufactured in Preparation Example 1, a photograph of the upper surface (c) of the PI-coated carrier plate, and the upper surface of the separated carrier plate after the lift-off process; and a photograph (d) of the PI film.

As a result of the experiment, it was confirmed that the carrier plate and the flexible substrate could be separated cleanly without any residue when the lift-off process was performed using the XFL lift-off process apparatus of the present invention.

Although the technical spirit of the present invention described above has been specifically described in the preferred embodiment, it should be noted that the embodiment is for the description and not the limitation. In addition, those of ordinary skill in the technical field of the present invention will understand that various embodiments are possible within the scope of the technical spirit of the present invention. Accordingly, the true technical protection scope of the present invention should be defined by the technical spirit of the appended claims.

1: XFL lift-off device
2: object
10: carrier plate
11: Support substrate
12: light-to-heat conversion layer
13: protective layer
12a: metal layer
12b: first metal layer
12c: buffer layer
12d: second metal layer
12e: pattern layer
20: flexible substrate
30: electronic device layer
31: barrier layer
32: TFT layer
33: OLED layer
34: TFE layer
100: stage part
110: stage
111: first through hole
112: a first seating groove;
113: window
120: stage fixing device
121: second through hole
122: second seating groove
200: XFL module unit
210: xenon flash lamp (XFL)
211: light distribution (XFL effective area)
212: optical overlap
220: reflector

Claims (12)

a stage unit capable of positioning an object on the upper surface; and
an XFL module unit positioned spaced apart from the stage unit and including one or more xenon flash lamps (XFL) for irradiating light toward the object;
An XFL lift-off device comprising a. The method of claim 1,
The stage part,
a frame-shaped stage including a first through hole, a first seating groove in which a window can be mounted in a lower portion of the first through hole, and a window, and capable of positioning an object on the upper portion of the window; and
a plate-shaped stage fixing device including a second through hole and a second seating groove in a lower portion of the second through hole for mounting the stage;
XFL lift-off device comprising a. 3. The method of claim 2,
XFL lift-off device, characterized in that the window comprises a transmissive material capable of transmitting a wavelength of 100 nm or more. The method of claim 1,
The XFL lift-off device for manufacturing an OLED display, characterized in that the one or more xenon flash lamps are arranged in multiple rows. The method of claim 1,
The subject is
a carrier plate including a support substrate and a light to heat conversion (LTHC) layer disposed on the support substrate;
a flexible substrate positioned on the carrier plate; and
an electronic device layer positioned on the flexible substrate;
XFL lift-off device comprising a. 6. The method of claim 5,
XFL lift-off device, characterized in that the carrier plate and the flexible substrate are separated by scanning the surface. In the lift-off method using the XFL lift-off device of claim 1,
preparing the subject;
positioning the object on a stage;
fixing the stage to a stage fixing device; and
lifting off the object by irradiating light on an upper surface or a lower surface of the object;
A lift-off method of a flexible substrate comprising a. 8. The method of claim 7,
The lifting off step is a lift-off method of a flexible substrate, characterized in that the stage unit or the XLF module unit is moved to the left and right to perform a surface scan. 9. The method of claim 8,
The lift-off method of the flexible substrate, characterized in that the moving speed of the stage part or the XFL module part is 1 mm/s to 500 mm/s. 8. The method of claim 7,
In the lifting off step, a pulse width of the irradiated light is 0.1 ms to 50 ms. 8. The method of claim 7,
In the lifting off step, the energy per pulse of the irradiated light is 1 J/cm ² to 15 J/cm ² The lift-off method of the flexible substrate, characterized in that. 8. The method of claim 7,
In the lifting off, the frequency of the irradiated light is 1 Hz to 50 Hz.

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