KR20210144303A - Methods of forming seasoning thin film in apparatus for treating substrate - Google Patents

Abstract

One aspect of the present invention provides a method for forming a seasoning thin film in a substrate processing apparatus, wherein the substrate processing apparatus comprises: a process chamber having a process space for processing a substrate; a showerhead provided above the process space in order to supply a gas into the process chamber; and a susceptor provided under the process space and seating a substrate to be processed. The method for forming the seasoning thin film in the substrate processing apparatus comprises: a cleaning step of cleaning the inside of the process chamber using a gas containing fluorine; and a seasoning step of depositing a seasoning thin film on the susceptor by supplying a seasoning gas into the process chamber, wherein the warpage of the seasoning thin film is adjusted to be -10 to +100 μm such that the fluorine can be diffused to the seasoning thin film in order to reduce the fluorine remaining on the susceptor. The present invention can prevent the occurrence of susceptor cracks.

Description

Methods of forming seasoning thin film in apparatus for treating substrate }

The present invention relates to a method for forming a thin film, and more particularly, to a method for forming a seasoning thin film in a substrate processing apparatus.

The thin film of the semiconductor device is formed on the substrate by a sputtering method, a vapor deposition method, a CVD method, a PVD method, an ALD method, or the like. A substrate processing apparatus for performing this method typically includes a process chamber, a gas line for supplying various gases into the process chamber, a showerhead for ejecting various gases into the process chamber, and a station for mounting a semiconductor substrate. Includes scepter. However, reaction products generated during the thin film forming process using the substrate processing apparatus are deposited (adhered) on the surface of the thin film as well as the inner surface of the chamber. Since the mass-production substrate processing apparatus processes a large amount of substrates, if the thin film forming process is continued while the reaction product is attached to the inside of the process chamber, the reaction product is peeled off and particles are generated. These particles may cause defects in the deposition process and may be attached to the substrate to reduce the yield of the semiconductor device. For this reason, it is necessary to clean the inside of the chamber after a predetermined time or a predetermined number of substrate deposition processes are completed. Recently, an in-situ cleaning method using fluorine (F) has been used. However, as fluorine remaining after the cleaning process accumulates in the susceptor, there is a problem in that the susceptor is cracked. In addition, problems caused by residual fluorine after the cleaning process may appear not only in the susceptor but also in the chamber and components inside the chamber.

An object of the present invention is to provide a method for forming a seasoning thin film in a substrate processing apparatus to prevent susceptor cracks from being generated by accumulating fluorine remaining in a susceptor after a cleaning process. . However, these problems are exemplary, and the scope of the present invention is not limited thereto.

According to an aspect of the present invention, a method for forming a seasoning thin film in a substrate processing apparatus includes a process chamber having a processing space for processing a substrate, a showerhead provided above the processing space to supply a gas into the process chamber, and the process chamber; A method of forming a seasoning thin film in a substrate processing apparatus provided in a lower portion of a processing space and including a susceptor for seating a substrate to be processed, the method comprising: a cleaning step of cleaning the inside of the process chamber using a gas containing fluorine; and a seasoning step of depositing a seasoning thin film on the susceptor by supplying a seasoning gas into the process chamber, wherein the fluorine is transferred to the seasoning thin film to reduce the fluorine remaining on the susceptor. It is characterized in that the warpage of the seasoning thin film is adjusted to be -10 to +100 μm so that it can be diffused.

In the method of forming a seasoning thin film of the substrate processing apparatus, the seasoning may include: a first seasoning step of supplying a first seasoning gas into the process chamber to deposit a first seasoning thin film having a first stress on the susceptor; and a second seasoning step of depositing a second seasoning thin film having a second stress on the first seasoning thin film by supplying a second seasoning gas into the process chamber. may be different from each other of tensile stress and compressive stress so that at least some of them may be offset from each other.

In the method of forming a seasoning thin film of the substrate processing apparatus, the first seasoning thin film may have tensile stress, and the second seasoning thin film may have compressive stress.

In the method of forming a seasoning thin film of the substrate processing apparatus, the first seasoning thin film may have compressive stress, and the second seasoning thin film may have tensile stress.

In the method of forming a seasoning thin film of the substrate processing apparatus, the first seasoning thin film may be a PEOX film, and the second seasoning thin film may be a silicon nitride film. In this case, the first seasoning gas is a combination _{of SiH 4} and N _{2 O;} a combination of SiH ₄ and O _{2 ;} or _{a combination of SiH 4} , NH ₂ and N ₂ , wherein the second seasoning gas is a combination _{of SiH 4} and NH _{3 ;} a combination of SiH ₄ and N _{2 ;} or _{a combination of SiH 4} , NH ₃ and N ₂ ; it may be.

In the method of forming a seasoning thin film of the substrate processing apparatus, the first seasoning thin film may be a PEOX film, and the second seasoning thin film may be a TEOS film. In this case, the first seasoning gas is a combination _{of SiH 4} and N _{2 O;} a combination of SiH ₄ and O _{2 ;} or _{a combination of SiH 4} , NH ₂ and N ₂ , wherein the second seasoning gas is a combination _{of TEOS and O 2 ;} Or a combination of TEOS, Ar and O ₂ ; may be.

In the method of forming a seasoning thin film of the substrate processing apparatus, warpage of the seasoning thin film may be implemented by adjusting HF power or LF power applied in the seasoning step.

In the method of forming a seasoning thin film of the substrate processing apparatus, warpage of the seasoning thin film may be implemented by adjusting a gap between the showerhead and the susceptor in the seasoning step.

In the method of forming a seasoning thin film of the substrate processing apparatus, warpage of the seasoning thin film may be implemented by adjusting a flow rate of a reactant gas supplied in the seasoning step.

According to an embodiment of the present invention made as described above, it is possible to implement a method of forming a seasoning thin film of a substrate processing apparatus for preventing susceptor cracks from being generated by accumulating fluorine remaining in the susceptor after the cleaning process. Of course, the scope of the present invention is not limited by these effects.

1 is a flowchart illustrating a method of forming a seasoning thin film in a substrate processing apparatus according to an embodiment of the present invention.
2 is a view showing the specimen structure, warpage, and FT-IR analysis results according to an experimental example of the present invention.
3 is a view showing a Raman analysis result of a specimen according to an experimental example of the present invention.
4 is a view showing a TEM analysis result of a specimen according to an experimental example of the present invention.
5 is a view showing a TOF SIMS analysis result of a specimen according to an experimental example of the present invention.

Hereinafter, several preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

Examples of the present invention are provided to more completely explain the present invention to those of ordinary skill in the art, and the following examples may be modified in various other forms, and the scope of the present invention is as follows It is not limited to an Example. Rather, these embodiments are provided so as to more fully and complete the present disclosure, and to fully convey the spirit of the present invention to those skilled in the art. In addition, in the drawings, the thickness or size of each layer is exaggerated for convenience and clarity of description.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described with reference to the drawings schematically illustrating ideal embodiments of the present invention. In the drawings, variations of the illustrated shape can be expected, for example depending on manufacturing technology and/or tolerances. Accordingly, embodiments of the inventive concept should not be construed as limited to the specific shape of the region shown in the present specification, but should include, for example, changes in shape caused by manufacturing.

1 is a flowchart illustrating a method of forming a seasoning thin film in a substrate processing apparatus according to an embodiment of the present invention.

Referring to FIG. 1 , in the method of forming a seasoning thin film of a substrate processing apparatus according to an embodiment of the present invention, a process chamber in which a processing space for processing a substrate is formed and an upper portion of the processing space to supply a gas into the process chamber A method of forming a seasoning thin film in a substrate processing apparatus including a showerhead provided in the processing space and a susceptor provided under the processing space for seating a substrate to be processed, wherein a gas containing fluorine is used to form a seasoning thin film inside the process chamber A cleaning step of cleaning (S100); and a seasoning step (S200) of supplying a seasoning gas into the process chamber to deposit a seasoning thin film on the susceptor. Further, the seasoning step (S200); After seating the substrate on the susceptor, depositing a target thin film on the substrate may be further performed.

In the method of forming a seasoning thin film of a substrate processing apparatus according to an embodiment of the present invention, in order to reduce the fluorine remaining on the susceptor, the warpage ( warpage) is characterized in that it is adjusted to be -10 to +100 μm.

The cleaning of the inside of the chamber ( S100 ) is performed to remove a reaction product adhering to the inner surface of the process chamber during a thin film forming process using a substrate processing apparatus.

Reaction products generated during the thin film forming process using the substrate processing apparatus are deposited (adhered) on the surface of the thin film as well as the inner surface of the chamber. Since the mass-production substrate processing apparatus processes a large amount of substrates, if the thin film forming process is continued while the reaction product is attached to the inside of the process chamber, the reaction product is peeled off and particles are generated. These particles may cause defects in the deposition process and may be attached to the substrate to reduce the yield of the semiconductor device. For this reason, it is necessary to clean the inside of the chamber after a predetermined time or a predetermined number of substrate deposition processes are completed.

The cleaning step S100 may include an in-situ cleaning method using fluorine (F). That is, the inner wall of the chamber and the susceptor may be cleaned by injecting a cleaning gas containing fluorine into the process chamber. The cleaning gas containing fluorine may include any one of cleaning gas of NF ₃ , C ₃ F ₈ , CF ₄ , C ₂ F ₆ , C ₃ F ₈ , SiF ₄ and F ₂ . However, as a predetermined time or a predetermined number of substrate deposition processes are performed, fluorine remaining after the cleaning process is continuously accumulated in the susceptor (chuck heater), thereby causing cracks in the susceptor. In addition, a problem caused by fluorine remaining after the cleaning process may appear not only in the susceptor but also in the chamber and components inside the chamber made of aluminum.

After cleaning the inside of the process chamber (S100), even if the same material as the material to be deposited in the subsequent step, a material with strong adhesion that does not fall off even during the subsequent process, or particles are generated, it does not significantly affect the thin film to be subsequently deposited. By seasoning the inside of the chamber with a non-material material ( S200 ), the atmosphere of the chamber after cleaning the chamber can be created in an optimal condition to promote stable production of semiconductor devices.

In the present invention, after performing the cleaning step (S100), in performing the seasoning step (S200) of depositing a seasoning thin film on the susceptor by supplying a seasoning gas into the process chamber, the stress of the seasoning thin film is reduced. It was confirmed that the fluorine remaining on the susceptor can be reduced by adjusting.

For example, by reducing the stress of the seasoning thin film having compressive stress or adding a seasoning thin film having tensile stress to facilitate diffusion of fluorine remaining in the susceptor to the seasoning thin film, It was confirmed that fluorine remaining on the scepter can be reduced.

The present inventors have discovered that it is necessary to adjust the warpage of the seasoning thin film to be -10 to +100 μm in order to implement these characteristics. When the warpage of the seasoning thin film is less than -10 μm, it is difficult for fluorine remaining in the susceptor to diffuse into the seasoning thin film due to the high compressive stress of the seasoning thin film. The self-stress is increased, and the seasoning thin film is broken. When the warpage of the seasoning thin film is adjusted to be -10 to +100 μm, the compressive stress of the seasoning thin film is relieved and diffusion to the seasoning thin film, which is fluorine, accumulated in the susceptor becomes easier.

Since fluorine diffused from the susceptor to the seasoning thin film is removed in the next cleaning step ( S100 ), eventually fluorine accumulation in the susceptor may be alleviated to slow or prevent susceptor cracking. Accordingly, it is possible to increase the period of use of the expensive susceptor, thereby reducing the manufacturing cost.

Various embodiments of a method of forming the above-described seasoning thin film will be described below.

The seasoning step ( S200 ) may include a first seasoning step of supplying a first seasoning gas into the process chamber to deposit a first seasoning thin film having a first stress on the susceptor; and a second seasoning step of depositing a second seasoning thin film having a second stress on the first seasoning thin film by supplying a second seasoning gas into the process chamber. may be different from each other of tensile stress and compressive stress so that at least some of them may be offset from each other.

For example, the first seasoning thin film may have tensile stress, the second seasoning thin film may have compressive stress, and the warpage of the composite seasoning thin film including the first and second seasoning thin films It can be adjusted to be -10 to +100 μm.

As another example, the first seasoning thin film may have compressive stress, the second seasoning thin film may have tensile stress, and the warpage of the composite seasoning thin film including the first and second seasoning thin films It can be adjusted to be -10 to +100 μm.

The seasoning thin film implemented in the seasoning step S200 may be a single seasoning thin film made of a single film or a complex seasoning thin film made of a plurality of films.

Referring to an example in which the seasoning thin film is a complex seasoning thin film, the first seasoning thin film may be a PEOX film, and the second seasoning thin film may be a silicon nitride film. In this case, the first seasoning gas is a combination _{of SiH 4} and N _{2 O;} a combination of SiH ₄ and O _{2 ;} or _{a combination of SiH 4} , NH ₂ and N ₂ , wherein the second seasoning gas is a combination _{of SiH 4} and NH _{3 ;} a combination of SiH ₄ and N _{2 ;} or _{a combination of SiH 4} , NH ₃ and N ₂ ; it may be.

Looking at another example in which the seasoning thin film is a complex seasoning thin film, the first seasoning thin film may be a PEOX film, and the second seasoning thin film may be a TEOS film. In this case, the first seasoning gas is a combination _{of SiH 4} and N _{2 O;} a combination of SiH ₄ and O _{2 ;} or _{a combination of SiH 4} , NH ₂ and N ₂ , wherein the second seasoning gas is a combination _{of TEOS and O 2 ;} Or a combination of TEOS, Ar and O ₂ ; may be.

The seasoning thin film may be made of the same or different materials from the target thin film implemented in the step of depositing the target thin film, which is a subsequent process. The target thin film may be, for example, an oxide or nitride based on Si, or a stacked structure thereof. However, the technical spirit of the present invention is not limited by the above-described exemplary types of the target thin film.

For example, the target thin film may be a TEOS film, and the seasoning thin film may be a composite seasoning thin film including a plasma enhanced oxide (PEOX) film and a silicon nitride film. In this case, the target thin film may have a compressive stress in which the TEOS film has a warpage of about -30 μm. On the other hand, since the PEOX film has a compressive stress having a warpage of about -12 μm and a silicon nitride layer has a tensile stress with a warpage of about +6 μm, the composite seasoning thin film exhibits a compressive stress with a warpage of about -6 μm. can have Therefore, the stress of the seasoning thin film is designed to have a lower compressive stress component than the stress of the target thin film, and at the same time, even if a material or particle with strong adhesiveness that does not fall off is generated even during a subsequent process, it greatly affects the thin film to be subsequently deposited. It is possible to implement a seasoning thin film that does not extend.

In the method for forming a seasoning thin film of a substrate processing apparatus according to an embodiment of the present invention, the warpage of the seasoning thin film can be implemented by controlling the stress of the seasoning thin film, so factors that can control the stress of the seasoning thin film will be described.

For example, the stress of the seasoning thin film may be implemented by adjusting the HF power or the LF power applied in the seasoning step. HF power, for example, can be adjusted in the range of 5 ~ 2000W, when the HF power is increased, because the ion bombardment effect increases, the density of the seasoning thin film increases and moves in the direction of compressive stress. do. LF power, for example, can be adjusted in the range of 5 ~ 1000W, when the LF power is applied or increased, since the ion bombardment effect rapidly increases, the density of the seasoning thin film increases and compressive stress move in the direction

As another example, the stress of the seasoning thin film may be implemented by adjusting a gap between the showerhead and the susceptor in the seasoning step. A gap between the showerhead and the susceptor may be adjusted, for example, in a range of 5 to 20 mm.

As another example, the stress of the seasoning thin film may be implemented by adjusting the flow rate of a _{reactant gas (N 2} , Ar, He, O _{2, etc.) supplied in the seasoning step.} The flow rate of the reaction gas supplied in the seasoning step may be adjusted, for example, in the range of 5 to 30000 sccm.

Experimental example

Hereinafter, it will be described that the stress of the seasoning thin film deposited on the susceptor is related to the susceptor crack through an experimental example. The heater mentioned in this experimental example means a susceptor, a precoat layer means a season thin film, and ON (SiN on PEOX) means a composite thin film in which a silicon nitride film is formed on the PEOX film, , OT (TEOS on PEOX) refers to a composite thin film in which a TEOS layer is formed on a PEOX layer.

1. Background

The regular removal of thin films deposited in chemical vapor deposition (CVD) process chambers is an important requirement in semiconductor manufacturing technology. Plasma etching with a fluorine-containing gas such as SF ₆ or NF ₃ is widely applied because of the efficient reaction of fluorine radicals. However, the plasma enhanced CVD (PECVD) chamber and internal components are made of aluminum containing anodized aluminum oxide. . Fluorine radicals generated in the etching process affect the exposed surfaces of the chamber and the aluminum that makes up the interior components, which can accumulate a layer of aluminum fluoride contaminants. This is because aluminum is easily oxidized and fluorine is a much more powerful oxidizing agent than oxygen. The aluminum fluoride contamination layer can shorten the life of anodized aluminum parts. During the conversion of aluminum to aluminum fluoride, the surfaces of the chamber and internal components can become rougher and thinner. For example, showerheads made of aluminum are susceptible to fluorine, and a continuous increase in fluorine concentration can destroy the chuck heater. When a showerhead is exposed to fluorine, aluminum fluoride forms around the surface of the showerhead. As the amount of aluminum fluoride increases, the emissivity of the showerhead changes and, consequently, the thickness uniformity of the thin film deposited on the wafer. The cost also increases. Ultimately, aluminum fluoride must be removed to maintain thin film properties within a given process window. Because aluminum fluoride is water-soluble, wet chemical cleaning is commonly used to restore PECVD chamber performance. However, wet cleaning is It involves disassembling the chamber and cleaning the chamber components while the PECVD chamber is not in operation. Thus, wet chemical cleaning causes significant chamber downtime during wet cleaning.

In a typical PECVD process, seasoning is performed after a cleaning process using fluorine radicals to maintain a stable environment in the chamber and minimize damage caused by plasma. Since the seasoning film is in direct contact with the aluminum fluoride layer of the chamber surface and internal components, fluorine can easily diffuse into the seasoning film. Once this is done, the seasoning thin film is periodically removed and deposited as the PECVD process progresses, and as a result, the fluorine concentration in the chamber and internal components can be reduced. The inventors show the diffusion of aluminum fluoride and damage formed by fluorine radicals due to the stress of the seasoning thin film in this experimental example. Since the information that can be analyzed in an amorphous material is limited, in this experimental example, a single crystal silicon wafer was treated with a fluorine radical, and sample preparation and irradiation were performed.

2. Experimental process

2 is a view showing the specimen structure, warpage and FT-IR analysis results according to the experimental example of the present invention, FIG. 3 is a view showing the Raman analysis result of the specimen according to the experimental example of the present invention, and FIG. 4 is this It is a view showing the TEM analysis result of the specimen according to the experimental example of the present invention, and FIG. 5 is a view showing the TOF SIMS analysis result of the specimen according to the experimental example of the present invention.

Fluorine plasma treatment was performed on A-class bare wafers in the same manner as Clean Step conditions of Clean Recipe ON (SiN on PEOX) and OT (TEOS on PEOX) precoat layers were respectively deposited (see FIG. 2 ). The surface condition of the fluorine-treated Class A Si wafer and the degree of defect occurrence after deposition of the precoating layer were analyzed by FT IR. HR TEM was used for this purpose, and TOF SIMS was used to analyze the Fluorine Depth Profile of the pre-coat film and wafer.

3. Experimental Results and Analysis

The Si wafer was fluorinated in the same process as the Clean Step condition in the actual Clean Recipe, and the treated Si wafer was analyzed by FT-IR.

Referring to FIG. 2 , a 610 cm ^{-1 peak caused by Si-Si phonon interaction and a 618 cm -1} peak caused by Defect/Impurity/Lattice Distortion and the like could be observed. Similar FT-IR absorption peaks could be observed in the two wafers treated with fluorine, indicating that the two wafers were treated with fluorine at a similar level. The warpage of the precoat film deposited on the fluorine-treated Si wafer was -12㎛ (@PEOX), -30㎛ (@TEOS), and 6㎛ (@SiN), respectively. The warpage of the OT precoat film was -42㎛, it was found to be much higher than -6㎛ of ON pre-coating film. After fluorine treatment, both wafers showed an increase in defect peak and an increase in peak FWHM. FWHM (Full Width at Half Maximum) means the peak width at half the peak intensity and is used for crystallinity analysis. The smaller the FWHM, the better the crystallinity. The above results mean that defects are formed while fluorine is diffused into the Si wafer by the fluorine plasma treatment. Defect Peak Intensity and FWHM decreased after deposition of the ON precoat film, which can be understood as a partial recovery of the crystallinity of the Si wafer deteriorated by fluorine treatment. However, there was no change in the absorption peak in the sample on which the OT pre-coating film was deposited.

3 is a result of analysis by Confocal Raman Spectroscopy, and was analyzed with a Si peak located at ^{520 cm -1 .} Bare Si wafers showed very uniform crystallinity without specific contrast, and specific contrast after deposition of the precoat film (@Si Peak Intensity). When the thin film used as the precoat film was analyzed by HR TEM, it was judged that nanocrystals did not exist. It is considered that there is Since SiO ₂ and SiN have an amorphous structure in which nanocrystals do not exist, they cannot appear as sharp peaks in the Raman spectrum. After fluorine treatment, the crystallinity of the Si wafer is deteriorated due to diffusion of fluorine, and the deteriorated crystallinity of the Si wafer is partially recovered in the sample of the ON precoat film after deposition of the precoat film (diffusion into the precoat film which is fluorine present in the wafer) It is presumed to show a lighter contrast than the sample of the OT pre-coated film because the fluorine of the wafer is reduced. In the case of the sample of the OT pre-coated film, the contrast is very clear. In particular, there is a region showing very low intensity and wide FWHM, and the peak position of the region is also rapidly changed. This means that the stress of the sample of the OT precoat film remains larger than that of the sample of the ON precoat film. The Si-F peak was not observed because the residual amount of fluorine was very small. HR TEM (High-Resolution TEM) analysis was performed to analyze the structural properties of the Si wafer and the PEOX film (see FIG. 4 ).

In the case of the sample of the OT precoat film, a layer presumed to be _{SiO 2 containing a trace amount of fluorine was observed.} This will be described again in TOF SIMS analysis, which will be described later. In the Si wafer, not only point defects, but also regions in which the lattice structure was significantly destroyed were identified in various places. In the sample of the ON precoat film, no additional contrast (SiO2:F) was observed between the Si wafer and the precoat film, and only a few point defects were observed. This result means that in the case of the ON precoat film, the residual fluorine in the Si wafer is further reduced. TEM EDS analysis was performed to analyze the Fluorine Depth Profile of the two samples, and it was shown that the fluorine in the Si wafer diffused more into the PEOX film in the sample of the ON pre-coated film. However, since it contains a very trace amount of fluorine, sufficient quantitative analysis was not possible because the Fluorine Peak Intensity was at the noise level. TOF SIMS analysis was performed to analyze quantitative Fluorine Depth Profile (XPS & TEM Resolution Limit: 0.5% / SIMS: Measurable in ppm units).

5 is a result of TOF SIMS analysis of samples of ON and OT pre-coated films. In the case of the sample of the OT pre-coated film, it was found that fluorine diffusion was limited in the PEOX film adjacent to the Si wafer. This proves that there is a limit to diffusion of fluorine present in the wafer into the precoat film due to the compressive stress of the precoat film (@Fluorine Ion Depth Profile). Due to the compressive stress of the precoat film, continuous diffusion to the upper portion of the precoat film is not possible, so fluorine accumulates in the region adjacent to the surface of the Si wafer, and a SiO2:F layer is formed in the TEM result. On the other hand, in the case of the ON precoat film sample with low compressive stress, it shows that fluorine in the Si wafer diffuses to the upper layer of the precoat film. This is a decisive result that proves that the assumption that the degree of fluorine diffusion in the Si wafer (heater) varies according to the stress of the precoat film is valid. It can be seen that the residual amount of fluorine in the Si wafer can be reduced as more fluorine diffuses into the ON precoat layer.

Through the above-described experimental examples and analysis, it was proved that fluorine remaining in the Si wafer can be reduced by reducing the compressive stress of the precoating layer. This phenomenon is understood as a result sufficiently applicable to a susceptor (Chuck Heater) made of AlN and Y ₂ O _{3 .} Furthermore, when the main deposition film is a HT TEOS film, it is expected that the HT TEOS precoating layer can be changed to an ON Mask precoating layer. It is expected that the application of the pre-coat structure of ON Mask, which is already being mass-produced after verification, rather than a new pre-coat structure, is expected to bear relatively little risk.

Although the present invention has been described with reference to the embodiment shown in the drawings, which is merely exemplary, those skilled in the art will understand that various modifications and equivalent other embodiments are possible therefrom. Therefore, the true technical protection scope of the present invention should be determined by the technical spirit of the appended claims.

Claims (11)

A process chamber in which a processing space for processing a substrate is formed, a showerhead provided in an upper portion of the processing space to supply gas into the process chamber, and a susceptor provided in a lower portion of the processing space to seat a substrate to be processed A method of forming a seasoning thin film of a substrate processing apparatus comprising:
a cleaning step of cleaning the inside of the process chamber using a gas containing fluorine; and a seasoning step of depositing a seasoning thin film on the susceptor by supplying a seasoning gas into the process chamber.
In order to reduce the fluorine remaining on the susceptor, the warpage of the seasoning thin film is adjusted to be -10 to +100 μm so that the fluorine can be diffused into the seasoning thin film,
A method of forming a seasoning thin film in a substrate processing apparatus. The method of claim 1,
The seasoning step
a first seasoning step of supplying a first seasoning gas into the process chamber to deposit a first seasoning thin film having a first stress on the susceptor; and
a second seasoning step of supplying a second seasoning gas into the process chamber to deposit a second seasoning thin film having a second stress on the first seasoning thin film;
The first stress and the second stress are characterized in that at least a part of each of the tensile stress and the compressive stress is different from each other,
A method of forming a seasoning thin film in a substrate processing apparatus. 3. The method of claim 2,
The first seasoning thin film has a tensile stress, and the second seasoning thin film has a compressive stress,
A method of forming a seasoning thin film in a substrate processing apparatus. 3. The method of claim 2,
The first seasoning thin film has a compressive stress, and the second seasoning thin film has a tensile stress,
A method of forming a seasoning thin film in a substrate processing apparatus. 3. The method of claim 2,
The first season thin film is a PEOX film, and the second season thin film is a silicon nitride film,
A method of forming a seasoning thin film in a substrate processing apparatus. 6. The method of claim 5,
The first seasoning gas is a combination _{of SiH 4} and N _{2 O;} a combination of SiH ₄ and O _{2 ;} or a combination of _{SiH 4} , NH ₂ and N _{2 ;}
The second seasoning gas may be a combination _{of SiH 4} and NH _{3 ;} a combination of SiH ₄ and N _{2 ;} or _{a combination of SiH 4} , NH ₃ and N ₂ ; characterized in that
A method of forming a seasoning thin film in a substrate processing apparatus. 3. The method of claim 2,
The first seasoning thin film is a PEOX film, and the second seasoning thin film is a TEOS film,
A method of forming a seasoning thin film in a substrate processing apparatus. 8. The method of claim 7,
The first seasoning gas is a combination _{of SiH 4} and N _{2 O;} a combination of SiH ₄ and O _{2 ;} or a combination of _{SiH 4} , NH ₂ and N _{2 ;}
The second seasoning gas may be a combination _{of TEOS and O 2 ;} Or a combination of TEOS, Ar and O ₂ ; characterized in that
A method of forming a seasoning thin film in a substrate processing apparatus. The method of claim 1,
The warpage of the seasoning thin film is characterized in that it is implemented by adjusting the HF power or LF power applied in the seasoning step,
A method of forming a seasoning thin film in a substrate processing apparatus. The method of claim 1,
The warpage of the seasoning thin film is characterized in that it is implemented by adjusting a gap between the showerhead and the susceptor in the seasoning step,
A method of forming a seasoning thin film in a substrate processing apparatus. The method of claim 1,
The warpage of the seasoning thin film is characterized in that it is implemented by adjusting the flow rate of the reactant gas supplied in the seasoning step,
A method of forming a seasoning thin film in a substrate processing apparatus.

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