KR20210109069A - Substrate processing apparatus and method of controlling the same - Google Patents

Abstract

The present invention relates to a substrate processing device and a substrate processing method. More specifically, the present invention relates to the substrate processing device capable of optimizing a property of a thin film, and the substrate processing method. Disclosed, in the present invention, is the substrate processing device comprising: a power supply part (100) that generates RF power for generating plasma; a matching part (200) provided between the power supply part (100) and the process chamber (10) to match an impedance; a power distribution part (300) comprising variable capacitors provided between the matching part (200) and the process chamber (10) to branch and supply the RF power to the plurality of processing spaces (S1, S2, S3, S4), and provided to correspond to each of the plurality of processing spaces (S1, S2, S3, S4) to adjust the branched RF power; and a control part (400) for controlling a distribution of power supplied from the power distribution part (300) to the plurality of processing spaces (S1, S2, S3, S4), wherein by using a correlation between a thin film thickness deviation of each of the substrates formed by substrate processing performed in the plurality of processing spaces (S1, S2, S3, S4) and the variable capacitors, the control part (400) adjusts the RF power distributed and supplied to the plurality of processing spaces (S1, S2, S3, S4) by controlling each of the variable capacitors to minimize the thin film thickness deviation of the substrates processed in the plurality of processing spaces (S1, S2, S3, S4).

Description

Substrate processing apparatus and method of controlling the same

The present invention relates to a substrate processing apparatus and a substrate processing method, and more particularly, to a substrate processing apparatus and a substrate processing method capable of optimizing the properties of a thin film.

In general, plasma enhanced chemical vapor deposition (PECVD) equipment uses a chemical reaction of a gas in a vacuum state during a display manufacturing process or a semiconductor manufacturing process to deposit an insulating film, a protective film, an oxide film, a metal film, etc. on a substrate used to make

At this time, plasma refers to a state in which negatively charged electrons and positively charged ions are separated at ultra-high temperature, and plasma discharge is used for gas excitation to generate an active gas containing ions, free radicals, atoms, and molecules.

In recent years, wafers and glass substrates for manufacturing semiconductor devices are becoming larger, and a highly scalable plasma source having a high control capability for plasma ion energy and a large-area processing capability is required.

On the other hand, there are cases in which substrate processing for a plurality of substrates is performed in one process chamber for various purposes such as improvement in productivity of the substrate processing apparatus and process uniformity.

For example, such a substrate processing apparatus includes a process chamber for performing substrate processing, a plurality of gas injection units installed above the process chamber to inject a process gas into the processing space, and a plurality of gas injection units corresponding to the plurality of gas injection units within the process chamber. It is installed and includes a plurality of substrate support parts for supporting the substrate.

That is, a plasma atmosphere can be formed by applying RF power to a substrate processing apparatus capable of processing a plurality of substrates through a plurality of processing spaces. A plasma atmosphere may be formed in each of the spaces.

On the other hand, in this case, the thickness deviation between the substrates on which the substrate processing is performed in each processing space is generated according to the RF power distributed to each processing space. distribution technology to each processing space of

Conventionally, an impedance parameter is measured through a sensor installed at the end of a distributor of RF power corresponding to each processing space, and the measured parameter is compared with each other to control a variable capacitor of the RF power stage distributed among a plurality of processing spaces. By doing so, the distribution of RF power provided to each processing space was controlled.

In this case, due to the decrease in sensitivity of the sensor, it is difficult to accurately measure the phase difference between the current and the voltage, the reliability of the measured parameter is lowered, and when RF power is distributed based on the measured parameter, processing is performed in each processing space. There is a problem in that the consistency of the thickness deviation of the substrates to be used is insufficient.

In particular, when a parameter is measured through a sensor installed to correspond to each processing space and RF power is distributed, the impedance value for other processing spaces is compensated for by compensating for the distribution value of RF power for a specific processing space. There is a problem in that the RF power cannot be distributed to minimize the thickness deviation of the substrates by affecting the

It is an object of the present invention to provide a substrate processing apparatus and a substrate processing method capable of distributing RF power so that the consistency of thickness deviation between substrates processed in a plurality of processing spaces is excellent in order to solve the above problems .

The present invention was created to achieve the object of the present invention as described above, and the present invention is a process chamber 10 in which a plurality of processing spaces (S1, S2, S3, S4) for processing different substrates are formed. ), a plurality of substrate support parts 30 provided corresponding to the plurality of processing spaces S1, S2, S3, and S4 on which the substrate is mounted, and the plurality of processing spaces S1, S2, S3, S4 ) and includes a plurality of gas supply units 20 for supplying gas to each of the plurality of processing spaces S1, S2, S3, and S4, and the plurality of processing spaces S1, S2, A substrate processing apparatus for distributing and supplying RF power to each of S3 and S4 to generate plasma, comprising: a power supply unit 100 for generating RF power for generating plasma; a matching unit 200 provided between the power supply unit 100 and the process chamber 10 to match impedance; It is provided between the matching unit 200 and the process chamber 10 to branch and supply the RF power to the plurality of processing spaces S1, S2, S3, and S4, and to adjust the branched RF power. a power distribution unit 300 including variable capacitors provided to correspond to the plurality of processing spaces S1, S2, S3, and S4, respectively; and a control unit 400 for controlling distribution of power supplied from the power distribution unit 300 to the plurality of processing spaces S1, S2, S3, and S4, wherein the control unit 400 includes the plurality of The plurality of processing spaces (S1, S2, S3, S1, S2, S3, Disclosed is a substrate processing apparatus for controlling the RF power distributed and supplied to a plurality of processing spaces ( S1 , S2 , S3 , S4 ) by controlling each of the variable capacitors to minimize the thin film thickness variation of the substrates processed in S4). .

The control unit 400 may calculate a relational expression using each of the variable capacitors as a variable for each thin film thickness of a substrate on which substrate processing is performed in the plurality of processing spaces S1, S2, S3, and S4. .

The relation is,

(T1, T2, T3, and T4 are the thin film thicknesses of each substrate in the processing spaces S1, S2, S3, and S4, respectively, and V1, V2, V3, and V4 are variable capacitors corresponding to the processing spaces S1, S2, S3, and S4, respectively. of capacitance value).

In addition, the present invention forms a plurality of different processing spaces ( S1 , S2 , S3 , S4 ), and the plurality of processing spaces ( S1 , S2 , S3 , S3 , A substrate processing method of a substrate processing apparatus for distributing RF power to each of S4), and branching the RF power supplied through the power supply unit 100 to the plurality of processing spaces (S1, S2, S3, S4) and RF power distribution step (S200) to supply; and a substrate processing step (S300) of processing substrates through plasma respectively formed in the plurality of processing spaces (S1, S2, S3, S4) through the distributed RF power, wherein the RF power distribution step (S200) is, a sampling deposition step (S220) of performing deposition in order to measure a thin film thickness value of each of the substrates on which substrate processing is performed in the plurality of processing spaces (S1, S2, S3, S4); Based on the value measured through the sampling and deposition step (S220), the variable capacitors are used as variables for each thin film thickness of the substrate on which the substrate processing is performed in the plurality of processing spaces ( S1 , S2 , S3 , S4 ) a relational expression calculation step (S230) of calculating a relational expression; Disclosed is a substrate processing method comprising a setting step (S240) of varying the variable capacitors to minimize the thin film thickness deviation of the substrates processed in the plurality of processing spaces (S1, S2, S3, S4) based on the calculated relational expression. .

Before the sampling and deposition step (S220), the reference setting for setting the capacitance value of the variable capacitors so that the RF power distributed and supplied to the plurality of processing spaces (S1, S2, S3, S4) is equally distributed to each other It may include step S210.

The sampling and deposition step (S220) is a first-time deposition for measuring the thin film thickness of each of the substrates when the capacitance values of the variable capacitors are set as a reference through the reference setting step (S210), and the variable capacitors are Deposition may be performed a plurality of times according to the number of the plurality of processing spaces S1 , S2 , S3 , S4 for measuring the thin film thickness of each of the substrates according to the variable.

In the setting step (S240), the thin film thickness deviation of the substrates processed in the plurality of processing spaces (S1, S2, S3, S4) is the minimum based on the relational expression calculated through the relational expression calculation step (S230). Capacitance values of the variable capacitors may be set as much as possible.

An impedance matching step (S100) of matching the impedance between the process chamber 10 and the power supply unit 100 for supplying the RF power may be further included before the RF power distribution step (S200).

A substrate processing apparatus and a substrate processing method according to the present invention set a relation function between a substrate thickness result value according to substrate processing in a plurality of processing spaces ( S1 , S2 , S3 , S4 ) and a variable capacitor control value to set the RF power By distributing , there is an advantage in that the consistency of the thickness of the substrate between the plurality of processing spaces S1, S2, S3, and S4 is excellent.

In particular, in the substrate processing apparatus and substrate processing method according to the present invention, the resultant value of the substrate thickness according to the substrate processing of the plurality of processing spaces S1, S2, S3, and S4, and the variable capacitor control value through the relationship function between the RF When power is distributed, it is possible to achieve stable matching of substrate thickness deviations between the plurality of processing spaces (S1, S2, S3, S4) through adjustment of the functionalized variable capacitor value regardless of the conventional sensor sensitivity. .

1 is a conceptual diagram schematically illustrating a substrate processing apparatus according to the present invention.
FIG. 2 is a flowchart illustrating a substrate processing method of the substrate processing apparatus of FIG. 1 .

Hereinafter, a substrate processing apparatus and a substrate processing method according to the present invention will be described with reference to the accompanying drawings.

As shown in FIG. 1, the substrate processing apparatus according to the present invention includes a process chamber 10 in which a plurality of processing spaces S1, S2, S3, and S4 for processing different substrates are formed, and the plurality of A plurality of substrate support units 30 provided to correspond to the processing spaces S1 , S2 , S3 , and S4 on which the substrate is mounted, and the plurality of processing spaces S1 , S2 , S3 , and S4 to correspond to each other. and a plurality of gas supply units 20 for supplying gas to each of the plurality of processing spaces S1, S2, S3, and S4, and each of the plurality of processing spaces S1, S2, S3, and S4 A substrate processing apparatus for distributing and supplying RF power to generate plasma,

a power supply unit 100 for generating RF power for generating plasma; a matching unit 200 provided between the power supply unit 100 and the process chamber 10 to match impedance; It is provided between the matching unit 200 and the process chamber 10 to branch and supply the RF power to the plurality of processing spaces S1, S2, S3, and S4, and to adjust the branched RF power. a power distribution unit 300 including variable capacitors provided to correspond to the plurality of processing spaces S1, S2, S3, and S4, respectively; and a control unit 400 for controlling distribution of power supplied from the power distribution unit 300 to the plurality of processing spaces S1, S2, S3, and S4.

At this time, the control unit 400 uses the correlation between the variable capacitors and the deviation of the thin film thickness of each of the substrates formed by performing the substrate processing in the plurality of processing spaces S1, S2, S3, and S4. Each of the variable capacitors is controlled to minimize the thin film thickness deviation of the substrates processed in the plurality of processing spaces S1, S2, S3, and S4, and distributed and supplied to the plurality of processing spaces S1, S2, S3, and S4. RF power can be adjusted.

In addition, the substrate processing apparatus according to the present invention includes a plurality of gas injection units 20 installed in each of the plurality of processing spaces S1 , S2 , S3 , and S4 in the process chamber 10 to inject a process gas; , may further include a plurality of substrate support parts 30 to be disposed opposite to each of the plurality of gas injection parts 20 to support the substrate.

Also, the substrate processing apparatus according to the present invention may include a first RF sensor 500 that is disposed at the output end of the matching unit 200 and measures an output value of RF power.

In addition, in the substrate processing apparatus according to the present invention, a plurality of second RF sensors 600 corresponding to the plurality of processing spaces S1 , S2 , S3 , and S4 measure RF power distributed through the power distribution unit 300 . ) may include

Here, the substrate according to the present invention is a configuration in which substrate processing such as deposition and etching is performed, and any substrate such as a semiconductor manufacturing substrate, a LCD manufacturing substrate, an OLED manufacturing substrate, a solar cell manufacturing substrate, and a transparent glass substrate is possible.

In addition, the substrate processing performed by the substrate processing apparatus according to the present invention may be any process, such as a PECVD process, as long as it is a substrate processing process that performs substrate processing using plasma, such as deposition and etching, in a processing space.

The process chamber 10 is a configuration that forms a processing space for substrate processing, and various configurations are possible.

For example, the process chamber 10 may include a chamber body having an opening formed at an upper side thereof, and an upper lid detachably coupled to the opening of the chamber body to form a processing space together with the chamber body.

In addition, the process chamber 10 may form a plurality of different processing spaces S1 , S2 , S3 and S4 for substrate processing for a plurality of substrates, and a plurality of processing spaces S1 , S2 , S3 and S4 are not completely separated from each other in the process chamber 10, but may be spatially separated processing spaces.

That is, the process chamber 10 may form a plurality of different processing spaces S1 , S2 , S3 , and S4 for substrate processing for a plurality of substrates, and each of the plurality of processing spaces S1 and S2 , S3 , and S4 may include gas injection units 20 for injecting gas to each, and substrate support units 30 for supporting the substrate at positions opposite to the gas injection units 20 , respectively.

Furthermore, in the process chamber 10 , a plasma atmosphere is formed in each of the plurality of processing spaces S1 , S2 , S3 , and S4 , so that a plurality of substrates may be processed using plasma.

In this case, each of the plurality of processing spaces ( S1 , S2 , S3 , S4 ) through the power distribution unit 300 and variable capacitors provided to correspond to the plurality of processing spaces ( S1 , S2 , S3 , S4 ) to be described later. ), the plasma atmosphere for each can be adjusted individually.

The gas injection units 20 are installed in each of the plurality of processing spaces S1 , S2 , S3 , and S4 to inject the process gas, and various configurations are possible.

In particular, the gas injection units 20 are connected to a power supply unit 100 to be described later, so that RF power generated from the power supply unit 100 and distributed through the power distribution unit 300 may be applied, and installed opposite to each other. A plasma atmosphere can be formed in the processing space by forming a potential difference between the substrate support unit 30 and the substrate support unit 30 .

On the other hand, in this case, the gas injection unit 20, by applying the RF power distributed through the power distribution unit 300, individual control of plasma for each of the plurality of processing spaces (S1, S2, S3, S4) It may be possible.

The substrate support units 30 are disposed to face each of the plurality of gas injection units 20 to support the substrate, and various configurations are possible.

For example, the substrate support units 30 may be installed in each of the plurality of processing spaces S1 , S2 , S3 , and S4 to serve as a ground to form a potential difference between the substrate support unit 20 and the gas injection unit 20 . .

Meanwhile, the plurality of processing spaces S1 , S2 , S3 , and S4 may form two or more processing spaces, for example, as shown in FIG. 1 , may be composed of four processing spaces. .

In this case, in order to apply the RF power generated from the single power supply unit 100 to each of the plurality of processing spaces S1, S2, S3, and S4, it is necessary to distribute and supply the RF power. In the process, the plasma atmosphere formed in each processing space is different according to the distribution of RF power, so that the thickness of the thin film between the substrates to be processed in each processing space may be different.

In addition, even when RF power is equally distributed, the plasma atmosphere formed in each processing space is different according to the variable capacitor corresponding to each processing space, so that the thickness of the thin film between the substrates processed in each processing space may occur.

Since the variation in the thickness of the thin film thus generated makes it difficult to maintain a constant quality of the product, it is necessary to control the RF distribution in order to minimize the variation in the thickness of the thin film of the substrates processed in each processing space.

To this end, a substrate processing apparatus according to the present invention includes a power supply unit 100 for generating RF power for generating plasma; a matching unit 200 provided between the power supply unit 100 and the process chamber 10 to match impedance; It is provided between the matching unit 200 and the process chamber 10 to branch and supply the RF power to the plurality of processing spaces S1, S2, S3, and S4, and to adjust the branched RF power. a power distribution unit 300 including variable capacitors provided to correspond to the plurality of processing spaces S1, S2, S3, and S4, respectively; and a control unit 400 for controlling distribution of power supplied from the power distribution unit 300 to the plurality of processing spaces S1, S2, S3, and S4.

Also, the substrate processing apparatus according to the present invention may include a first RF sensor 500 that is disposed at the output end of the matching unit 200 and measures an output value of RF power.

In addition, in the substrate processing apparatus according to the present invention, a plurality of second RF sensors 600 corresponding to the plurality of processing spaces S1 , S2 , S3 , and S4 measure RF power distributed through the power distribution unit 300 . ) may include

The power supply unit 100 is a configuration for generating RF power for generating plasma, and various configurations are possible.

For example, the power supply unit 100 is a single power supply unit 100, each of a plurality of processing spaces (S1, S2, S3, S4) in the matching unit 200 and the power distribution unit 300 to be described later. The total amount of RF power to be applied can be generated and supplied.

In addition, the power supply unit 100, the high-frequency power source 110 and the low-frequency power source 120 are separately provided to supply power corresponding to a corresponding frequency.

On the other hand, by providing the power supply unit 100 as a single unit and distributing RF power to each processing space through the power distribution unit 300, it is possible to prevent an increase in the cost and footprint of the entire system due to the increase in the number of power sources. There is an advantage that efficient substrate processing is possible.

The matching unit 200 is provided between the power supply unit 100 and the process chamber 10 to match the impedance, and various configurations are possible.

The matching unit 200 is provided between the above-described high-frequency power source 110 and the process chamber 10 and is provided between the high-frequency matching unit 210 for matching impedance, and between the low-frequency power source 120 and the process chamber 10 . It may include a low frequency matching unit 220 for matching the impedance.

For example, the matching unit 200 is a circuit for impedance matching for removing the return loss of RF power, and the impedance of the power supply unit 100 and the plurality of processing spaces S1, S2, S3, and S4 are connected. The combined impedance of the forming process chamber 10 and the matching unit 200 may be designed to match.

On the other hand, in this case, the matching unit 200, when the above-described high-frequency power source 110 and low-frequency power source 120 are separately provided, can be connected to each output terminal and installed, respectively, to a single power supply unit 100. may be provided for.

At this time, the matching unit 200, any conventionally disclosed impedance matching configuration used to match the impedance is applicable.

Meanwhile, the substrate processing apparatus according to the present invention may include a first RF sensor 500 that is disposed at the output end of the matching unit 200 and measures an output value of RF power.

The first RF sensor 500 may be disposed at the output terminal of the matching unit 200 to measure the RF power value output through the matching unit 200 , thereby performing impedance matching through the matching unit 200 . can check whether

In this case, the first RF sensor 500 includes a high frequency first RF sensor 510 installed at the output end of the high frequency matching unit 210 and a low frequency first RF sensor 520 installed at the output end of the low frequency matching unit 220 . may include

The power distribution unit 300 is configured to branch and supply RF power applied to the plurality of gas injection units 20 between the matching unit 200 and the process chamber 10 to a plurality of processing spaces S1 and S2. , S3, S4) As a configuration including variable capacitors corresponding to each, various configurations are possible.

The power distribution unit 300 transmits the RF power passing through the high frequency matching unit 210 from the above-described high frequency power supply 110 to each of the plurality of processing spaces S1 , S2 , S3 and S4 in the process chamber 10 . The RF power passing through the high frequency power distribution unit 310 and the low frequency power source 120 to the low frequency matching unit 220 is distributed to each of the plurality of processing spaces S1, S2, S3, and S4 in the process chamber 10. It may include a low-frequency power distribution unit 320 to distribute.

For example, the power distribution unit 300 includes a circuit including variable capacitors to distribute the RF power input through the power supply unit 100 and the matching unit 200, a plurality of processing spaces S1, RF power applied to each of S2, S3, and S4) can be individually controlled and distributed.

That is, the power distribution unit 300 adjusts the capacitance of the variable capacitor provided at the rear end in order to adjust the impedance of the circuit for distribution, so that each of the plurality of processing spaces S1, S2, S3, and S4 is provided. Rather than simply distributing the applied RF power according to the same ratio, it can be individually controlled and distributed according to the size of the RF power of each of the plurality of processing spaces S1, S2, S3, and S4 required.

The variable capacitors are included in the power distribution unit 300 to adjust individual sizes of RF power distributed through the power distribution unit 300 through impedance, and various configurations are possible.

The variable capacitors may be respectively provided at the end of the distribution circuit of the power distribution unit 300 to correspond to the plurality of processing spaces S1, S2, S3, and S4. As it is controlled, each impedance may be adjusted and distributed so as to individually control the distributed RF power.

Meanwhile, in this case, a plurality of second RF sensors 600 corresponding to the plurality of processing spaces S1 , S2 , S3 , and S4 to measure RF power distributed through the power distribution unit 300 may be included.

The plurality of second RF sensors 600 are disposed at the output end of the power distribution unit 300 to measure the magnitude of RF power applied to each of the plurality of processing spaces (S1, S2, S3, S4), Various configurations are possible.

For example, the plurality of second RF sensors 600 are provided with four corresponding to each processing space with respect to the process chamber 10 having four processing spaces, and RF power applied to each processing space. can measure the size of , and through this, it is possible to obtain an RF power value applied to each processing space in an RF power distribution method to be described later.

Meanwhile, in the case of substrates on which substrate processing is performed through a plurality of processing spaces S1, S2, S3, and S4 as described above, even when RF power is equally distributed, the characteristics of each processing space, such as temperature, impedance, etc. Accordingly, there is a problem in that there is a variation in the thickness of the thin film after substrate processing.

That is, even when RF power is equally distributed, uniform substrate processing cannot be performed between the processing spaces due to various variables of the processing spaces, and variations in the thickness of the thin film between the respective substrates may occur.

In order to solve this problem, RF power is individually applied to each of the processing spaces to minimize the thin film thickness deviation between the substrates on which the substrate processing is performed in each of the processing spaces or to maintain the thin film thickness deviation within a preset range. can be controlled

To this end, the control unit 400 controls the distribution of power supplied from the power distribution unit 300 to the plurality of processing spaces S1 , S2 , S3 , and S4 , and various configurations are possible.

For example, the control unit 400 may adjust the amount of RF power distributed and applied to each processing space through the power distribution unit 300 by adjusting the capacitance values of the variable capacitors of the power distribution unit 300 . have.

In this case, the control unit 400 controls the distribution of power through the relationship between the thin film thickness deviation of the substrates on which the substrate processing is performed in the plurality of processing spaces S1, S2, S3, and S4 and the relationship between the variable capacitors. In more detail, the capacitance values of the variable capacitors may be adjusted so that the deviation of the thin film thickness of the substrates on which the substrate processing is performed in the plurality of processing spaces S1, S2, S3, and S4 is minimized or optimized.

In this case, the control unit 400 may calculate a relational expression using variable capacitors as variables for each thin film thickness of a substrate on which substrate processing is performed in the plurality of processing spaces S1 , S2 , S3 , and S4 .

For example, with respect to the process chamber 10 provided with four processing spaces, the control unit 400 determines the thickness of the thin film of the substrate on which the substrate processing is performed through the first processing space S1 in the first processing space ( S1 ). A function expression may be derived using variable capacitors corresponding to S1), the second processing space S2, the third processing space S3, and the fourth processing spaces S4 as variables.

Furthermore, the control unit 400, through the third processing space (S3), a function formula using variable capacitors for the thin film thickness of the substrate on which the substrate processing is performed through the second processing space (S2) as variables in the same way A function expression using variable capacitors as a variable for the thin film thickness of the substrate on which the substrate processing is performed, and a function expression using variable capacitors for the thin film thickness of the substrate on which the substrate processing is performed through the fourth processing space (S4) as variables. can

Through this, the control unit 400 can obtain as many function equations as the number of processing spaces using variable capacitors as variables for the thin film thickness of the substrate on which substrate processing is performed in each processing space, and through the obtained function expressions, in each processing space It is possible to obtain a capacitance value of the variable capacitors that optimizes the deviation between the thin film thicknesses of the substrate within a minimum or preset range.

That is, the controller 400 may control the capacitance values of the variable capacitors so that the deviation of the thin film thickness of each of the substrates calculated through the relational expression is minimized.

On the other hand, as described above, the control unit 400 can obtain a function expression using, as variables, the thin film thicknesses of the substrates on which the substrate processing is performed in each processing space with respect to the variable capacitor corresponding to each processing space. .

Accordingly, the control unit 400 can optimize the RF power distribution by deriving the capacitance value of each variable capacitor to achieve the minimum deviation with respect to the thin film thicknesses of the substrates on which the substrate processing is performed in each processing space.

On the other hand, a detailed description of the substrate processing method for minimizing the thin film thickness variation between the substrates on which substrate processing is performed in the plurality of processing spaces ( S1 , S2 , S3 , S4 ) by optimizing RF power distribution is as follows.

In the substrate processing method according to the present invention, a plurality of processing spaces S1, S1, A substrate processing method of a substrate processing apparatus for distributing RF power to each of S2, S3, and S4, wherein RF power supplied through the power supply unit 100 is applied to the plurality of processing spaces S1, S2, S3, and S4. ) and an RF power distribution step (S200) for branching and supplying; and a substrate processing step ( S300 ) of processing the substrates through plasma respectively formed in the plurality of processing spaces ( S1 , S2 , S3 , S4 ) through the distributed RF power.

In addition, in the substrate processing method according to the present invention, an impedance matching step (S100) of matching the impedance between the process chamber 10 and the power supply unit 100 for supplying RF power before the RF power distribution step (S200) is additionally performed may include

The impedance matching step ( S100 ) is a step of matching the impedance between the process chamber 10 and the power supply unit 100 for supplying RF power before the RF power distribution step ( S200 ), and may be performed by various methods.

In the impedance matching step (S100), as described above, the impedance between the power supply unit 100 and the process chamber 10 may be matched through the matching unit 200, for example, the power supply unit 100 If the impedance is 50Ω, it can be matched to have a matching impedance of 50Ω in the same way.

In this case, the impedance matching step (S100) is a process chamber 10 including a plurality of processing spaces (S1, S2, S3, S4) through a single matching unit 200 connected to a single power supply unit 100. ) can be performed for

In addition, in the impedance matching step ( S100 ), the total amount of RF power before distribution is generated through the power supply unit 100 , and may be supplied to the power distribution unit 300 through the matching unit 200 .

The RF power distribution step (S200) is a step of branching and supplying the RF power supplied through the power supply unit 100 to the plurality of processing spaces (S1, S2, S3, S4), and can be performed by various methods. have.

For example, in the RF power distribution step ( S200 ), in the plurality of processing spaces ( S1 , S2 , S3 , S4 ), sampling is performed to measure the thin film thickness value of each of the substrates on which the substrate processing is performed. a deposition step (S220); Based on the value measured through the sampling and deposition step (S220), a relational expression using the variable capacitors as a variable for each thin film thickness of the substrate on which the substrate processing is performed in the plurality of processing spaces (S1, S2, S3, S4) a relational expression calculation step (S230) for calculating; It may include a setting step (S240) of varying the variable capacitors to minimize the thin film thickness deviation of the substrates processed in the plurality of processing spaces (S1, S2, S3, S4) based on the calculated relational expression.

The reference setting step ( S210 ) is a step of setting a reference for performing the sampling and deposition step ( S220 ), which will be described later, and may be performed by various methods.

For example, in the reference setting step ( S210 ), variable capacitors that are distributed and supplied to the plurality of processing spaces ( S1 , S2 , S3 , and S4 ) may be equally distributed to each other.

That is, in the reference setting step ( S210 ), the capacitance values of the variable capacitors that allow the distributed RF power to be equally distributed may be set as a reference.

In this case, in the reference setting step ( S210 ), the distributed RF power may be identical to each other, and may be regarded as the same when the RF power value is within a preset range in consideration of the measurement error.

On the other hand, in the reference setting step ( S210 ), by setting a case in which the distributed RF power is the same as each other as a reference, the RF power at this time may be set to 0, which is a reference value.

The sampling and deposition step (S220) is a step of measuring a thin film thickness value of each of the substrates on which the substrate processing is performed in the plurality of processing spaces (S1, S2, S3, S4) according to the plurality of variable capacitors. Various methods can depend on

For example, the sampling deposition step ( S220 ) may be performed to obtain sampling data in order to calculate the relationship between the thin film thickness of the substrate and the plurality of variable capacitors through the relational expression calculation step ( S230 ) to be described later.

That is, in the sampling and deposition step ( S220 ), a thin film thickness value according to the values of the plurality of variable capacitors can be obtained by performing deposition by changing the capacitance of the variable capacitors to a preset value in a state in which the reference is set.

On the other hand, in this case, the sampling deposition step (S220) is the first deposition for measuring the thickness of each thin film of the substrates when the capacitance values of the variable capacitors set as a reference through the reference setting step (S210), and the variable capacitors Deposition may be performed a plurality of times in response to the number of the plurality of processing spaces S1, S2, S3, and S4 for measuring the thin film thickness of each of the substrates according to the variable.

More specifically, in the sampling deposition step (S220), the reference setting step (S210) is a variable set based on a value in which RF power is equally distributed to each of the plurality of processing spaces ( S1 , S2 , S3 , S4 ). The thickness of the thin film of the substrate in each of the plurality of processing spaces S1, S2, S3, and S4 can be measured through the first deposition at the capacitor capacitance value.

In addition, thereafter, in the sampling and deposition step (S220), the variable capacitors can be varied to measure the thickness value of each of the substrates accordingly, and the number of the plurality of processing spaces (S1, S2, S3, S4) Correspondingly, it can be performed multiple times.

More specifically, with respect to the process chamber 10 in which four processing spaces are formed, the first processing space S1, the first processing space S1, Thin film thickness values for the substrates in the second processing space S2, the third processing space S3, and the fourth processing space S4 can be obtained, taking into account the number of capacitance variables of the four processing spaces and the four variable capacitors. It is possible to obtain thin film thickness values of the substrates to be processed through each processing space while changing the capacitance value of the variable capacitor four times.

With respect to the process chamber 10 in which four processing spaces are formed through this, the sampling and deposition step S220 is performed a total of four times, whereby four variable capacitors for each of four substrate thickness values of the first processing space S1 are obtained. of the capacitance values of the four variable capacitors for each of the four substrate thickness values of the second processing space S2, and the four variable capacitors for each of the four substrate thickness values of the third processing space S3. The capacitance values and the capacitance values of the four variable capacitors for each of the four substrate thickness values of the fourth processing space S4 can be obtained.

That is, since capacitance values of four variable capacitors exist for one substrate thickness, a function having five variables is derived, so that the sampling and deposition step (S220) is performed once through the initial reference value to derive five parameters. After being executed, it may be performed four times corresponding to the number of processing spaces S1, S2, S3, and S4, and may be performed a plurality of times corresponding to the number of processing spaces.

The relational expression calculation step (S230) is a step of deriving a function that is a relational expression between the thin film thickness of the substrate and the variable capacitors based on the data measured through the sampling and deposition step (S220), and may be performed by various methods.

For example, the relational expression calculation step S230 may derive a function expression using variable capacitors as variables for each thin film thickness of a substrate on which substrate processing is performed in a plurality of processing spaces S1, S2, S3, S4. and multiple regression analysis methods may be used.

More specifically, with respect to the process chamber 10 forming the four processing spaces, a function using the four variable capacitors as variables for the thin film thickness of the substrate on which the substrate processing is performed in the first processing space S1 can be derived. In the same manner, in the second processing space ( S2 ), the third processing space ( S3 ), and the fourth processing space ( S4 ), a function using four variable capacitors as variables for each of the thin film thicknesses of the substrates on which the substrate processing is performed can be derived.

More specifically, the functional formula using the thin film thickness and the capacitance value of the variable capacitor as variables according to the present invention is as follows.

(T1, T2, T3, and T4 are the thin film thicknesses of each substrate in the processing spaces S1, S2, S3, and S4, respectively, and V1, V2, V3, and V4 are variable capacitors corresponding to the processing spaces S1, S2, S3, and S4, respectively. of capacitance value)

Through this, as a variable affecting the thin film thickness of the substrate on which substrate processing is performed in the first processing space S1, not only V1, which is the capacitance value of the variable capacitor corresponding to the first processing space S1, but also the second and third , by using the capacitance values V2, V3, and V4 of the variable capacitors corresponding to the 4 processing spaces S2, S3, and S4 as variables, a more precise relationship between the thin film thickness of the substrate and the capacitance value of the variable capacitor can be derived. .

In order to find out the five coefficient values of this relational expression, the substrate thin film thickness at the reference value through the sampling and deposition step (S220) and the substrate thin film thickness value data according to the capacitance value of the variable capacitor through four additional depositions are obtained. By substituting the obtained data, the coefficient value can be selected and the relational expression can be completed.

Accordingly, a function expression corresponding to the number of processing spaces may be derived, and each function expression may be a function of a thin film thickness of a substrate on which substrate processing is performed in each processing space.

Meanwhile, in the relational expression calculation step ( S230 ), capacitance values of variable capacitors having an optimum thin film thickness deviation may be derived based on the derived function.

In the setting step (S240), based on the function derived through the relational expression calculation step (S230), the capacitance value of the variable capacitors having the optimum thin film thickness deviation between the plurality of processing spaces (S1, S2, S3, S4) As a step of applying the variable capacitors of the power distribution unit 300 through the control unit 400, various methods may be used.

That is, in the setting step (S240), the capacitance value of the variable capacitor in which the thin film thickness deviation of each processing space calculated through the relational expression calculation step (S230) is within the minimum or preset range through the control unit 400, each variable capacitor can be applied to, and through this, it is possible to perform substrate processing by minimizing the deviation in thin film thickness between substrates on which substrate processing is performed in the plurality of processing spaces S1, S2, S3, and S4.

The substrate processing step ( S300 ) is a step of processing the substrates through plasma respectively formed in the plurality of processing spaces ( S1 , S2 , S3 , S4 ) through distributed RF power, and may be performed by various methods. .

On the other hand, the substrate processing step (S300) may be performed after performing the RF power distribution step (S200) once at the time of initial equipment setup. As another example, the RF power distribution step (S200) is continuously performed according to a specific cycle. You may.

Since the above has only been described with respect to some of the preferred embodiments that can be implemented by the present invention, the scope of the present invention, as noted, should not be construed as being limited to the above embodiments, and It will be said that the technical idea and the technical idea accompanying the fundamental are all included in the scope of the present invention.

10: process chamber 100: power supply
200: matching unit 300: power distribution unit
400: control unit 500: first RF sensor
600: second RF sensor

Claims (8)

A process chamber 10 in which a plurality of processing spaces S1, S2, S3, and S4 for processing different substrates are formed, and the plurality of processing spaces S1, S2, S3, and S4 are provided to correspond to the above A plurality of substrate support units 30 on which a substrate is mounted, and the plurality of processing spaces S1, S2, S3, and S4 are provided to correspond to each of the plurality of processing spaces S1, S2, S3, and S4. A substrate processing apparatus comprising a plurality of gas supply units 20 for supplying gas to the ,
a power supply unit 100 for generating RF power for generating plasma;
a matching unit 200 provided between the power supply unit 100 and the process chamber 10 to match impedance;
It is provided between the matching unit 200 and the process chamber 10 to branch and supply the RF power to the plurality of processing spaces S1, S2, S3, and S4, and to adjust the branched RF power. a power distribution unit 300 including variable capacitors provided to correspond to the plurality of processing spaces S1, S2, S3, and S4, respectively;
and a control unit 400 for controlling distribution of power supplied from the power distribution unit 300 to the plurality of processing spaces S1, S2, S3, and S4,
The control unit 400,
In the plurality of processing spaces S1, S2, S3, and S4, the plurality of processing spaces S1, S2, Controlling the variable capacitors to minimize the thickness variation of the substrates processed in S3, S4, respectively, to adjust the RF power distributed and supplied to a plurality of processing spaces (S1, S2, S3, S4) Substrate processing equipment. The method according to claim 1,
The control unit 400,
and calculating a relational expression using each of the variable capacitors as a variable for each thin film thickness of a substrate on which substrate processing is performed in the plurality of processing spaces (S1, S2, S3, S4). 3. The method according to claim 2,
The relation is,

(T1, T2, T3, and T4 are the thin film thicknesses of each substrate in the processing spaces S1, S2, S3, and S4, respectively, and V1, V2, V3, and V4 are variable capacitors corresponding to the processing spaces S1, S2, S3, and S4, respectively. of capacitance value)
Substrate processing apparatus, characterized in that. A plurality of different processing spaces S1, S2, S3, and S4 are formed and plasma is generated in each of the plurality of processing spaces S1, S2, S3, and S4 of the process chamber 10 to perform substrate processing. As a substrate processing method of the substrate processing apparatus according to any one of claims 1 to 3 for distributing and supplying RF power,
an RF power distribution step (S200) of branching and supplying RF power supplied through the power supply unit 100 to the plurality of processing spaces (S1, S2, S3, S4);
A substrate processing step (S300) of processing substrates through plasma respectively formed in the plurality of processing spaces (S1, S2, S3, S4) through the distributed RF power;
The RF power distribution step (S200),
a sampling and deposition step (S220) of performing deposition to measure a thin film thickness value of each of the substrates on which substrate processing is performed in the plurality of processing spaces (S1, S2, S3, S4);
Based on the value measured through the sampling and deposition step (S220), the variable capacitors are used as variables for each thin film thickness of the substrate on which the substrate processing is performed in the plurality of processing spaces ( S1 , S2 , S3 , S4 ) a relational expression calculation step (S230) of calculating a relational expression;
Substrate processing comprising a setting step (S240) of varying the variable capacitors to minimize the thin film thickness deviation of the substrates processed in the plurality of processing spaces (S1, S2, S3, S4) based on the calculated relational expression Way. 5. The method according to claim 4,
Before the sampling and deposition step (S220), the reference setting for setting the capacitance value of the variable capacitors so that the RF power distributed and supplied to the plurality of processing spaces (S1, S2, S3, S4) is equally distributed to each other Substrate processing method comprising the step (S210). 6. The method of claim 5,
The sampling deposition step (S220) is,
The first one-time deposition for measuring the thin film thickness of each of the substrates when the capacitance values of the variable capacitors set as a reference through the reference setting step (S210), and the variable capacitors are varied accordingly for each of the substrates A substrate processing method, characterized in that the deposition is performed a plurality of times corresponding to the number of the plurality of processing spaces (S1, S2, S3, S4) for measuring the thickness of the thin film. 5. The method according to claim 4,
The setting step (S240) is,
Based on the relational expression calculated through the relational expression calculation step S230, the capacitance value of the variable capacitors is calculated so that the thin film thickness deviation of the substrates processed in the plurality of processing spaces S1, S2, S3, and S4 is minimized. Substrate processing method, characterized in that set. 5. The method according to claim 4,
Substrate processing characterized in that it further comprises an impedance matching step (S100) of matching the impedance between the process chamber 10 and the power supply unit 100 for supplying the RF power before the RF power distribution step (S200) Way.

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