KR20210104853A - 웨이퍼를 조절하기 위한 열조절 시스템이 있는 리소그래피 장치 - Google Patents

웨이퍼를 조절하기 위한 열조절 시스템이 있는 리소그래피 장치 Download PDF

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Publication number
KR20210104853A
KR20210104853A KR1020217022778A KR20217022778A KR20210104853A KR 20210104853 A KR20210104853 A KR 20210104853A KR 1020217022778 A KR1020217022778 A KR 1020217022778A KR 20217022778 A KR20217022778 A KR 20217022778A KR 20210104853 A KR20210104853 A KR 20210104853A
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KR
South Korea
Prior art keywords
substrate
thermal
radiation
temperature
lithographic apparatus
Prior art date
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KR1020217022778A
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English (en)
Korean (ko)
Inventor
덴 브링크 마리너스 아트 반
Original Assignee
에이에스엠엘 네델란즈 비.브이.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 에이에스엠엘 네델란즈 비.브이. filed Critical 에이에스엠엘 네델란즈 비.브이.
Publication of KR20210104853A publication Critical patent/KR20210104853A/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/7005—Production of exposure light, i.e. light sources by multiple sources, e.g. light-emitting diodes [LED] or light source arrays
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70783—Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020217022778A 2018-12-19 2019-11-28 웨이퍼를 조절하기 위한 열조절 시스템이 있는 리소그래피 장치 KR20210104853A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP18213862 2018-12-19
EP18213862.8 2018-12-19
PCT/EP2019/082878 WO2020126389A1 (fr) 2018-12-19 2019-11-28 Appareil lithographique doté d'un système de conditionnement thermique pour conditionner la tranche

Publications (1)

Publication Number Publication Date
KR20210104853A true KR20210104853A (ko) 2021-08-25

Family

ID=64746062

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020217022778A KR20210104853A (ko) 2018-12-19 2019-11-28 웨이퍼를 조절하기 위한 열조절 시스템이 있는 리소그래피 장치

Country Status (6)

Country Link
EP (1) EP3899663A1 (fr)
KR (1) KR20210104853A (fr)
CN (1) CN113330369A (fr)
NL (1) NL2024322A (fr)
TW (1) TW202041974A (fr)
WO (1) WO2020126389A1 (fr)

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1030222B1 (fr) * 1999-02-18 2006-01-04 ASML Netherlands B.V. Appareil de projection lithographique
SG115631A1 (en) 2003-03-11 2005-10-28 Asml Netherlands Bv Lithographic projection assembly, load lock and method for transferring objects
EP1860506B1 (fr) * 2003-10-16 2009-04-08 ASML Netherlands B.V. Méthode de fabrication d'un dispositif
US9366973B2 (en) 2011-02-18 2016-06-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
NL2009533A (en) 2011-10-27 2013-05-07 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
TWI715039B (zh) 2014-06-03 2021-01-01 荷蘭商Ａｓｍｌ荷蘭公司 用於補償一曝光誤差的方法、元件製造方法、基板台、微影裝置、控制系統、用於量測反射率的方法、及用於量測一極紫外線輻射劑量的方法
JP6371473B2 (ja) 2014-09-25 2018-08-08 エーエスエムエル ネザーランズ ビー．ブイ． 照明システム
JP6952606B2 (ja) 2015-04-21 2021-10-20 エーエスエムエル ネザーランズ ビー．ブイ． 冷却装置及びその使用方法並びにリソグラフィ装置
US10394140B2 (en) 2016-09-02 2019-08-27 Asml Netherlands B.V. Lithographic apparatus
US10578949B2 (en) 2017-02-03 2020-03-03 Apple Inc. Asymmetric zones in a Fresnel lens

Also Published As

Publication number Publication date
NL2024322A (en) 2020-07-07
TW202041974A (zh) 2020-11-16
CN113330369A (zh) 2021-08-31
EP3899663A1 (fr) 2021-10-27
WO2020126389A1 (fr) 2020-06-25

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