KR20210102567A - Apparatus for processing substrate - Google Patents

Abstract

Provided is a device for processing a substrate. The device for processing the substrate comprises: a power providing part providing RF power; a process chamber that provides a processing space for a substrate; a plasma generating part configured to excite a process gas introduced into the process space into plasma by using the RF power; and a moving part that moves a position of the plasma generating part with respect to the process chamber. Therefore, an objective of the present invention is to provide the device for processing the substrate that implements a uniform plasma distribution.

Description

Substrate processing apparatus {Apparatus for processing substrate}

The present invention relates to a substrate processing apparatus.

When manufacturing a semiconductor device or a display device, various processes such as photography, etching, ashing, ion implantation, thin film deposition, and cleaning are performed. Here, the photographic process includes coating, exposure, and developing processes. A photoresist is applied on a substrate (ie, a coating process), a circuit pattern is exposed on the substrate on which a photosensitive film is formed (ie, an exposure process), and an exposed area of the substrate is selectively developed (ie, a developing process).

In general, plasma may be used to etch a thin film formed on a wafer or a substrate in a semiconductor manufacturing process. The thin film may be etched by causing plasma to collide with the wafer or substrate by an electric field formed inside the process chamber.

SUMMARY OF THE INVENTION An object of the present invention is to provide a substrate processing apparatus that implements a uniform plasma distribution.

The problems of the present invention are not limited to the problems mentioned above, and other problems not mentioned will be clearly understood by those skilled in the art from the following description.

One aspect of the substrate processing apparatus of the present invention for achieving the above object includes a power providing unit providing RF power, a process chamber providing a processing space for a substrate, and using the RF power to and a plasma generator configured to excite the process gas introduced into the process space into plasma, and a moving part configured to move a position of the plasma generator with respect to the process chamber.

The plasma generating unit is provided in the form of a plate having a wide surface on one side facing the processing space.

The substrate processing apparatus may further include a first isolation part disposed between the plasma generator and the process chamber and coupled to the process chamber to isolate the plasma generator from the process chamber, wherein the plasma generator may include the second isolation part. 1 It is movable with respect to the containment unit.

The plasma generator includes a locking protrusion, and the first isolation unit includes a locking groove for accommodating the locking protrusion, and the diameter of the locking groove is larger than the diameter of the locking projection.

The moving unit includes a path providing unit providing a movement path of the plasma generating unit, and a driving unit having one side coupled to the plasma generating unit and capable of generating a driving force to move along the path providing unit.

Both ends of the path providing unit are coupled to the process chamber, and a movement path of the driving unit is disposed parallel to a wide surface of the plasma generating unit.

The driving unit includes a servo motor, a step motor or a magnetic motor.

The path providing unit includes a plurality of guide rails crossing each other.

A plurality of driving units provided on the plurality of mutually intersecting guide rails are independently movable along the corresponding guide rails.

The first isolation part includes a support part for supporting the plasma generator, and the support part includes an inclined part whose height is changed as it progresses outward from the center of the plasma generator.

The details of other embodiments are included in the detailed description and drawings.

1 is a view showing a substrate processing apparatus according to an embodiment of the present invention.
FIG. 2 is a perspective view of the plasma generator shown in FIG. 1 .
FIG. 3 is a perspective view of the first isolation unit shown in FIG. 1 ;
4 and 5 are diagrams illustrating a coupling relationship between the plasma generating unit and the first isolation unit shown in FIGS. 2 and 3 .
FIG. 6 is a top view of the substrate processing apparatus shown in FIG. 1 .
7 and 8 are diagrams for explaining the movement of the plasma generating unit by the moving unit shown in FIG. 6 .
FIG. 9 is a view showing that an inclined portion is formed on the support portion of the first isolation unit shown in FIG. 1 .
FIG. 10 is a view for explaining the movement of the plasma generating unit along the first isolation unit of FIG. 9 .

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. Advantages and features of the present invention, and a method for achieving them will become apparent with reference to the embodiments described below in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments published below, but may be implemented in various different forms, only these embodiments make the publication of the present invention complete, and common knowledge in the technical field to which the present invention pertains It is provided to fully inform the possessor of the scope of the invention, and the present invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout.

Reference to an element or layer “on” or “on” another element or layer includes not only directly on the other element or layer, but also with intervening other layers or elements. include all On the other hand, reference to an element "directly on" or "immediately on" indicates that no intervening element or layer is interposed.

Spatially relative terms "below", "beneath", "lower", "above", "upper", etc. It can be used to easily describe a correlation between an element or components and other elements or components. Spatially relative terms should be understood as terms including different orientations of the device during use or operation in addition to the orientation shown in the drawings. For example, if an element shown in the figures is turned over, an element described as "beneath" or "beneath" another element may be placed "above" the other element. Accordingly, the exemplary term “below” may include both directions below and above. The device may also be oriented in other orientations, and thus spatially relative terms may be interpreted according to orientation.

Although first, second, etc. are used to describe various elements, components, and/or sections, it should be understood that these elements, components, and/or sections are not limited by these terms. These terms are only used to distinguish one element, component, or sections from another. Accordingly, it goes without saying that the first element, the first element, or the first section mentioned below may be the second element, the second element, or the second section within the spirit of the present invention.

The terminology used herein is for the purpose of describing the embodiments and is not intended to limit the present invention. As used herein, the singular also includes the plural unless specifically stated otherwise in the phrase. As used herein, "comprises" and/or "comprising" refers to the presence of one or more other components, steps, operations and/or elements mentioned. or addition is not excluded.

Unless otherwise defined, all terms (including technical and scientific terms) used herein may be used with the meaning commonly understood by those of ordinary skill in the art to which the present invention belongs. In addition, terms defined in a commonly used dictionary are not to be interpreted ideally or excessively unless clearly defined in particular.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. A description will be omitted.

1 is a view showing a substrate processing apparatus according to an embodiment of the present invention.

Referring to FIG. 1 , the substrate processing apparatus 10 includes a process chamber 100 , a substrate support unit 200 , an isolation unit 300 , a showerhead 400 , a power supply unit 500 , and a plasma generation unit 600 . and a moving unit 700 .

The process chamber 100 may provide a process processing space 101 for processing the substrate W . The process for the substrate W may be etching or deposition, but is not limited thereto. A substrate support 200 may be provided in the process chamber 100 . The substrate support 200 may be disposed under the process processing space 101 to support the substrate W. The substrate support 200 may be an electrostatic chuck for fixing the substrate W with an electrostatic force, but the substrate support 200 of the present invention is not limited to the electrostatic chuck.

The isolation unit 300 serves to isolate the showerhead 400 and the plasma generating unit 600 from the process chamber 100 . The isolation unit 300 may include a first isolation unit 310 and a second isolation unit 320 .

The first isolation unit 310 is disposed between the plasma generating unit 600 and the process chamber 100 , and is coupled to the process chamber 100 to isolate the plasma generating unit 600 from the process chamber 100 . play a role The second isolation part 320 is disposed between the showerhead 400 and the process chamber 100 , is coupled to the process chamber 100 , and serves to isolate the showerhead 400 from the process chamber 100 . carry out

The first isolation unit 310 prevents contact between the plasma generator 600 and the process chamber 100 , and the second isolation unit 320 prevents contact between the showerhead 400 and the process chamber 100 . can be prevented. For example, an electrical contact between the plasma generator 600 and the process chamber 100 and an electrical contact between the showerhead 400 and the process chamber 100 may be prevented. Also, the second isolation unit 320 may partially surround the showerhead 400 . Due to this, it is possible to prevent the gas or plasma included in the processing space 101 from coming into contact with the showerhead 400 .

The showerhead 400 serves to inject a process gas for a process on the substrate W to the substrate W. The showerhead 400 may be disposed above the processing space 101 . The showerhead 400 may have an accommodation space for temporarily accommodating the process gas. The process gas introduced into the showerhead 400 may be injected after being accommodated in the accommodation space.

The showerhead 400 may include an injection hole 410 through which the process gas is injected. The process gas may be introduced into the process processing space 101 through the injection hole 410 . The process gas sprayed from the showerhead 400 is sprayed downward to reach the substrate W.

The power providing unit 500 serves to provide RF power. RF power may be provided to the plasma generator 600 . The power providing unit 500 may include at least one power source. The plurality of power sources may produce RF power of different frequencies. For example, the first power source may produce RF power of 400 kHz, the second power source may produce RF power of 9.8 MHz, and the third power source may produce RF power of 60 MHz. RF power generated by at least one power source among the plurality of power sources may be provided to the plasma generator 600 . The plasma generator 600 may receive RF power generated by one power source or RF power generated by a plurality of power sources.

As described above, a process gas may be injected into the process space 101 of the process chamber 100 for the process of the substrate W. The plasma generator 600 serves to excite the process gas introduced into the process space 101 into plasma by using RF power. The plasma generating unit 600 may be provided in the form of a plate having a wide side facing the process processing space 101 . The plasma generating unit 600 may be coupled to the first isolation unit 310 . Direct contact between the plasma generator 600 and the process chamber 100 may be prevented by the first isolation part 310 .

The plasma generator 600 may be provided in a form including, for example, an antenna coil (not shown). The plasma generator 600 may receive RF power to generate an electromagnetic field. The process gas may be excited into a plasma state by the electromagnetic field.

Meanwhile, as the plasma generating unit 600 is provided in a form including an antenna coil, the plasma generating unit 600 may generate plasma in an Inductively Coupled Plasma (ICP) method. However, the plasma generation method of the plasma generator 600 of the present invention is not limited to the inductively coupled plasma method, and may be a capacitively coupled plasma (CCP) method or a microwave plasma method.

Plasma may be used to process the substrate (W). For example, positive ions of plasma collide with the substrate W to perform an etching process on the substrate W.

In order to improve the yield of the process for the entire area of the substrate W, it is preferable that the plasma is uniformly distributed. If the plasma is not uniformly distributed over the substrate W, normal processing may be performed on a certain portion of the substrate W, but the normal processing may not be performed on other portions. A moving unit 700 may be provided for uniform distribution of plasma.

The moving unit 700 may move the position of the plasma generating unit 600 with respect to the process chamber 100 . Specifically, the plasma generating unit 600 may move with respect to the first isolation unit 310 . As the plasma generating unit 600 moves by the moving unit 700 , a uniform distribution of plasma may be implemented in the process processing space 101 .

The plasma generator 600 is manufactured such that a uniform electromagnetic field is formed over the entire area of the substrate W based on the center of the substrate W for uniform distribution of plasma with respect to the substrate W. However, a uniform electromagnetic field may not be formed on the substrate W due to a processing error or hardware asymmetry in the manufacturing process. The moving unit 700 may move the plasma generating unit 600 to compensate for the non-uniform plasma distribution. Even if the electromagnetic field by the plasma generating unit 600 is not uniformly formed on the substrate W at the initial position, the position of the plasma generating unit 600 is changed so that the plasma distribution is controlled and uniform plasma is applied to the substrate W distribution can be formed.

The moving unit 700 includes a path providing unit 710 and a driving unit 720 . The path providing unit 710 may provide a movement path of the plasma generating unit 600 . To this end, the path providing unit 710 may be provided in the form of a long bar on one side. Both ends of the path providing unit 710 may be coupled to the process chamber 100 , and a movement path of the driving unit 720 may be disposed parallel to a wide surface of the plasma generating unit 600 .

The driving unit 720 may generate a driving force to move along the path providing unit 710 . To this end, the driving unit 720 may be movably coupled to the path providing unit 710 .

As the driving unit 720 moves along the path providing unit 710 , the plasma generating unit 600 moves along the path providing unit 710 . As described above, the path providing unit 710 may be disposed such that the movement path of the driving unit 720 is parallel to the wide surface of the plasma generating unit 600 . Accordingly, as the driving unit 720 moves along the path providing unit 710 , the plasma generating unit 600 may move in a direction parallel to its wide surface.

One side of the driving unit 720 may be coupled to the plasma generating unit 600 . A connection unit 721 may be provided between the driving unit 720 and the plasma generating unit 600 for coupling between the driving unit 720 and the plasma generating unit 600 . One side of the connecting unit 721 may be connected to the driving unit 720 , and the other end of the connecting unit 721 may be connected to the plasma generating unit 600 . The connection unit 721 may be rotatably connected to at least one of the driving unit 720 and the plasma generating unit 600 . For example, the connection part 721 may rotate based on a rotation axis perpendicular to the wide surface of the plasma generator 600 . As will be described later, the plasma generating unit 600 may rotate with respect to the process chamber 100 by the movement of the driving unit 720 . Due to the rotation of the connecting unit 721 , the driving unit 720 rotates the plasma generating unit. It is possible to maintain the bond with (600).

The driving unit 720 may move along the path providing unit 710 by a length according to the control command. To this end, the driving unit 720 may be a servo motor or a stepper motor. When the driving unit 720 is a servo motor, an encoder (not shown) for controlling it may be provided.

Alternatively, in the present invention, the driving unit 720 may be a magnetic motor. For example, the driving motor may be a linear motor. When the driving unit 720 is a magnetic motor, the path providing unit 710 may be provided as a magnetic force track that alternately provides magnetic forces of different polarities in the longitudinal direction. The driving motor may move by providing a magnetic force that changes to the path providing unit 710 to generate a force parallel to the length direction of the path providing unit 710 . When the driving unit 720 is a magnetic motor, the generation of particles is reduced because the driving unit 720 moves along the path providing unit 710 in a state in which direct contact between the driving unit 720 and the path providing unit 710 is blocked. .

Although it has been described above that the driving unit 720 is a servo motor, a step motor, or a magnetic motor, this is exemplary and the driving unit 720 according to an embodiment of the present invention may be implemented in various forms. For example, the driving unit 720 may move along the path providing unit 710 using hydraulic pressure.

FIG. 2 is a perspective view of the plasma generating unit shown in FIG. 1 , FIG. 3 is a perspective view of the first isolation unit shown in FIG. 1 , and FIGS. 4 and 5 are the plasma generating unit and the first isolation shown in FIGS. 2 and 3 . It is a diagram showing the coupling relationship between parts.

Referring to FIG. 2 , the plasma generator 600 may be provided in the form of a plate.

2 shows the plasma generating unit 600 having the shape of a circular plate, according to some embodiments of the present invention, the plasma generating unit 600 may be variously determined according to the shape of the substrate W to be processed. . However, as will be described later, the plasma generating unit 600 may rotate with respect to the process chamber 100 . In this case, the plasma generating unit 600 may be provided in the form of a circular plate. Hereinafter, the plasma generating unit 600 of the circular plate will be mainly described.

The plasma generator 600 may include a locking protrusion 610 . The locking protrusion 610 may be formed to protrude outward from the surface of the plasma generator 600 . The locking protrusion 610 may be formed along the edge of the plasma generator 600 .

Referring to FIG. 3 , the first isolation part 310 may be provided in the form of a ring.

3 shows the first isolation unit 310 having the shape of a circular ring, according to some embodiments of the present invention, the first isolation unit 310 may be variously determined according to the shape of the plasma generating unit 600 . can However, as will be described later, the plasma generating unit 600 may rotate with respect to the process chamber 100 . In this case, the first isolation unit 310 may be provided in the form of a circular ring. Hereinafter, the first isolation portion 310 of the circular ring will be mainly described.

The first isolation part 310 may include a support part 311 . The support part 311 may be formed to protrude inward from the body of the first isolation part 310 . The support 311 may support the plasma generator. The outer edge of the plasma generator is supported by the support 311 so that the position can be fixed.

A locking groove 312 may be formed in the support part 311 of the first isolation part 310 . The locking groove 312 may accommodate the locking protrusion 610 of the plasma generator 600 .

4 and 5, by inserting the locking protrusion 610 of the plasma generator 600 into the locking groove 312 of the first isolation part 310, the plasma generator 600 and the first isolation part ( 310) may be combined.

The diameter of the locking groove 312 may be larger than the diameter of the locking protrusion 610 . As the diameter of the locking groove 312 is larger than that of the locking protrusion 610 , the plasma generator 600 may be movably coupled to the first isolation part 310 . That is, the plasma generating unit 600 may move with respect to the first isolation unit 310 . For movement of the plasma generating unit 600 with respect to the first isolation unit 310 , the outer edge of the plasma generating unit 600 and the inner edge of the first isolation unit 310 may be spaced apart by a predetermined distance D. .

FIG. 6 is a top view of the substrate processing apparatus illustrated in FIG. 1 , and FIGS. 7 and 8 are diagrams for explaining movement of the plasma generating unit by the moving unit illustrated in FIG. 6 .

Referring to FIG. 6 , the path providing unit 710 may include a plurality of guide rails crossing each other.

The plurality of guide rails intersecting each other may form a right angle in the longitudinal direction of each of the guide rails, for example, when viewed from above of the substrate processing apparatus 10 .

In addition, the path providing unit 710 may include a plurality of guide rails parallel to each other. That is, the path providing unit 710 may include a plurality of guide rails parallel to one direction and a plurality of guide rails parallel to the other direction. 6 illustrates a path providing unit 710 including two guide rails parallel to the horizontal direction and two guide rails parallel to the lengthwise direction. However, according to some embodiments of the present invention, the path providing unit 710 may be configured including one guide rail parallel to the horizontal direction and one guide rail parallel to the vertical direction, and guide rails in each direction may be configured. The path providing unit 710 may be configured by including three or more. Hereinafter, the configuration of the path providing unit 710 including two guide rails in each direction will be mainly described. In addition, two guide rails extending in a horizontal direction are referred to as a horizontal rail group, and two guide rails extending in a vertical direction are referred to as a vertical rail group.

The driving unit 720 may be provided for each guide rail. That is, the driving unit 720 may move along a corresponding guide rail. In particular, the plurality of driving units 720 provided on the plurality of guide rails crossing each other may move independently along the corresponding guide rails. For example, the two driving units 720 provided in the horizontal rail group may move by the same distance in the same direction or by different distances in different directions.

Referring to FIG. 7 , the driving unit 720 included in each rail group may move in the same direction by the same distance.

7 illustrates that the driving unit 720 included in the horizontal rail group moves to the right, and the driving unit 720 included in the vertical rail group moves upward. As the driving unit 720 moves, the plasma generating unit 600 coupled to the driving unit 720 may move. That is, the plasma generating unit 600 may move in the upper right direction with respect to the first isolation unit 310 .

As the driving unit 720 included in each rail group moves in the same direction, the plasma generating unit 600 may perform a two-dimensional movement parallel to a wide surface.

Referring to FIG. 8 , the driving unit 720 included in each rail group may move in different directions.

8 illustrates that the two driving units 720 included in the horizontal rail group move left and right, respectively, and the two driving units 720 included in the vertical rail group move upward and downward, respectively.

As the driving unit 720 included in each rail group moves in different directions, the plasma generating unit 600 may rotate.

As the plasma generator 600 moves or rotates with respect to the first isolation part 310 , the position or arrangement of the plasma generator 600 with respect to the process chamber 100 may be changed. When the position or arrangement of the plasma generator 600 is changed, the distribution of plasma formed in the process processing space 101 may be changed. That is, as the position and arrangement of the plasma generator 600 are appropriately determined, the distribution of plasma formed in the process processing space 101 may be uniformly formed.

9 is a view illustrating that an inclined portion is formed in the support portion of the first isolation unit shown in FIG. 1 , and FIG. 10 is a view for explaining the movement of the plasma generator along the first isolation unit of FIG. 9 .

Referring to FIG. 9 , the support part 311 may include an inclined part 313 .

The height of the inclined part 313 may be changed as it progresses outward from the center of the plasma generator 600 . For example, the height of the inclined part 313 may increase as it progresses outward from the center of the plasma generating part 600 .

Referring to FIG. 10 , the outer edge of the plasma generating unit 600 may be supported by the inclined unit 313 .

As the plasma generating unit 600 moves while the outer edge of the plasma generating unit 600 is supported by the inclined unit 313 , the posture of the plasma generating unit 600 may be changed. When the posture of the plasma generating unit 600 is changed, the electric field formed by the plasma generating unit 600 may be changed, thereby controlling the distribution of plasma in the processing space 101 .

Although embodiments of the present invention have been described with reference to the above and the accompanying drawings, those of ordinary skill in the art to which the present invention pertains can practice the present invention in other specific forms without changing its technical spirit or essential features. You will understand that there is Therefore, it should be understood that the embodiments described above are illustrative in all respects and not restrictive.

10: substrate processing apparatus 100: process chamber
200: substrate support 300: isolation unit
310: first isolation part 311: support part
312: catch groove 313: inclined portion
320: second isolation unit 400: shower head
500: power providing unit 600: plasma generating unit
610: locking protrusion 700: moving part
710: path providing unit 720: driving unit

Claims (10)

a power providing unit providing RF power;
a process chamber providing a processing space for the substrate;
a plasma generator configured to excite the process gas introduced into the process space into plasma by using the RF power; and
and a moving unit configured to move a position of the plasma generating unit with respect to the process chamber. The method of claim 1,
A substrate processing apparatus in which the plasma generator is provided in the form of a plate in which a wide surface of one side faces the processing space. The method of claim 1,
a first isolation part disposed between the plasma generator and the process chamber, coupled to the process chamber, and isolating the plasma generator from the process chamber;
The plasma generating unit is movable with respect to the first isolation unit. 4. The method of claim 3,
The plasma generating unit includes a locking protrusion,
The first isolation portion includes a locking groove for accommodating the locking projection,
A substrate processing apparatus in which a diameter of the locking groove is larger than a diameter of the locking protrusion. The method of claim 1,
The moving unit,
a path providing unit providing a movement path of the plasma generating unit; and
and a driving unit coupled to the plasma generating unit at one side thereof and movable along the path providing unit by generating a driving force. 6. The method of claim 5,
Both ends of the path providing unit are coupled to the process chamber, and a movement path of the driving unit is disposed parallel to a wide surface of the plasma generating unit. 6. The method of claim 5,
The driving unit may include a servo motor, a step motor, or a magnetic force motor. 6. The method of claim 5,
The path providing unit includes a plurality of guide rails intersecting each other. 9. The method of claim 8,
A plurality of driving units provided on the plurality of intersecting guide rails are independently movable along the corresponding guide rails. 4. The method of claim 3,
The first isolation part includes a support part for supporting the plasma generator,
The support portion includes an inclined portion whose height is changed as it progresses outward from the center of the plasma generator.

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