KR20210091647A - 비휘발성 메모리에 대한 자동 증분 기입 카운트 - Google Patents
비휘발성 메모리에 대한 자동 증분 기입 카운트 Download PDFInfo
- Publication number
- KR20210091647A KR20210091647A KR1020200118221A KR20200118221A KR20210091647A KR 20210091647 A KR20210091647 A KR 20210091647A KR 1020200118221 A KR1020200118221 A KR 1020200118221A KR 20200118221 A KR20200118221 A KR 20200118221A KR 20210091647 A KR20210091647 A KR 20210091647A
- Authority
- KR
- South Korea
- Prior art keywords
- memory
- write
- data
- write count
- memory arrays
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
- G06F11/1044—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices with specific ECC/EDC distribution
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
-
- G—PHYSICS
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- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/0703—Error or fault processing not based on redundancy, i.e. by taking additional measures to deal with the error or fault not making use of redundancy in operation, in hardware, or in data representation
- G06F11/0751—Error or fault detection not based on redundancy
- G06F11/0754—Error or fault detection not based on redundancy by exceeding limits
- G06F11/076—Error or fault detection not based on redundancy by exceeding limits by exceeding a count or rate limit, e.g. word- or bit count limit
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- G06F11/0766—Error or fault reporting or storing
- G06F11/0772—Means for error signaling, e.g. using interrupts, exception flags, dedicated error registers
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- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
- G06F11/1048—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices using arrangements adapted for a specific error detection or correction feature
-
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- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1076—Parity data used in redundant arrays of independent storages, e.g. in RAID systems
-
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- G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
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- G06F3/0619—Improving the reliability of storage systems in relation to data integrity, e.g. data losses, bit errors
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- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
- G06F3/0638—Organizing or formatting or addressing of data
- G06F3/064—Management of blocks
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- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
- G06F3/0655—Vertical data movement, i.e. input-output transfer; data movement between one or more hosts and one or more storage devices
- G06F3/0656—Data buffering arrangements
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- G06F—ELECTRIC DIGITAL DATA PROCESSING
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- G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
- G06F3/0655—Vertical data movement, i.e. input-output transfer; data movement between one or more hosts and one or more storage devices
- G06F3/0659—Command handling arrangements, e.g. command buffers, queues, command scheduling
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- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
- G06F3/0671—In-line storage system
- G06F3/0683—Plurality of storage devices
- G06F3/0688—Non-volatile semiconductor memory arrays
-
- G—PHYSICS
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- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F9/00—Arrangements for program control, e.g. control units
- G06F9/06—Arrangements for program control, e.g. control units using stored programs, i.e. using an internal store of processing equipment to receive or retain programs
- G06F9/30—Arrangements for executing machine instructions, e.g. instruction decode
- G06F9/30098—Register arrangements
-
- G—PHYSICS
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- G06F9/00—Arrangements for program control, e.g. control units
- G06F9/06—Arrangements for program control, e.g. control units using stored programs, i.e. using an internal store of processing equipment to receive or retain programs
- G06F9/46—Multiprogramming arrangements
- G06F9/54—Interprogram communication
- G06F9/542—Event management; Broadcasting; Multicasting; Notifications
-
- G—PHYSICS
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- G06F9/00—Arrangements for program control, e.g. control units
- G06F9/06—Arrangements for program control, e.g. control units using stored programs, i.e. using an internal store of processing equipment to receive or retain programs
- G06F9/46—Multiprogramming arrangements
- G06F9/54—Interprogram communication
- G06F9/546—Message passing systems or structures, e.g. queues
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
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- G—PHYSICS
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- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
- G11C16/3495—Circuits or methods to detect or delay wearout of nonvolatile EPROM or EEPROM memory devices, e.g. by counting numbers of erase or reprogram cycles, by using multiple memory areas serially or cyclically
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
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- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/004—Error avoidance
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/30—Monitoring
- G06F11/3003—Monitoring arrangements specially adapted to the computing system or computing system component being monitored
- G06F11/3034—Monitoring arrangements specially adapted to the computing system or computing system component being monitored where the computing system component is a storage system, e.g. DASD based or network based
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/30—Monitoring
- G06F11/3003—Monitoring arrangements specially adapted to the computing system or computing system component being monitored
- G06F11/3037—Monitoring arrangements specially adapted to the computing system or computing system component being monitored where the computing system component is a memory, e.g. virtual memory, cache
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/30—Monitoring
- G06F11/34—Recording or statistical evaluation of computer activity, e.g. of down time, of input/output operation ; Recording or statistical evaluation of user activity, e.g. usability assessment
-
- G—PHYSICS
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- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2201/00—Indexing scheme relating to error detection, to error correction, and to monitoring
- G06F2201/88—Monitoring involving counting
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
- G11C2013/0076—Write operation performed depending on read result
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/22—Control and timing of internal memory operations
- G11C2207/2263—Write conditionally, e.g. only if new data and old data differ
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Human Computer Interaction (AREA)
- Software Systems (AREA)
- Quality & Reliability (AREA)
- Computer Security & Cryptography (AREA)
- Multimedia (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Memory System (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16/742,332 US11200113B2 (en) | 2020-01-14 | 2020-01-14 | Auto-increment write count for nonvolatile memory |
| US16/742,332 | 2020-01-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20210091647A true KR20210091647A (ko) | 2021-07-22 |
Family
ID=70550520
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020200118221A Pending KR20210091647A (ko) | 2020-01-14 | 2020-09-15 | 비휘발성 메모리에 대한 자동 증분 기입 카운트 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US11200113B2 (https=) |
| EP (1) | EP3852109B1 (https=) |
| JP (1) | JP7687768B2 (https=) |
| KR (1) | KR20210091647A (https=) |
| CN (1) | CN113129949A (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7401193B2 (ja) * | 2019-04-17 | 2023-12-19 | キヤノン株式会社 | 情報処理装置及びその制御方法並びにプログラム |
| US11403195B2 (en) * | 2019-08-07 | 2022-08-02 | Micron Technology, Inc. | Application of dynamic trim strategy in a die-protection memory sub-system |
| US11561729B2 (en) | 2020-08-19 | 2023-01-24 | Micron Technology, Inc. | Write determination counter |
| US11373705B2 (en) * | 2020-11-23 | 2022-06-28 | Micron Technology, Inc. | Dynamically boosting read voltage for a memory device |
| US11971815B2 (en) * | 2021-08-31 | 2024-04-30 | Micron Technology, Inc. | Write budget control of time-shift buffer for streaming devices |
| KR102937735B1 (ko) | 2023-04-29 | 2026-03-10 | 양쯔 메모리 테크놀로지스 씨오., 엘티디. | 쓰기 방해 관리를 수행하는 메모리 제어기 및 메모리 시스템 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4394413B2 (ja) * | 2003-10-24 | 2010-01-06 | 株式会社日立製作所 | 情報記憶装置及び情報処理システム |
| US7631138B2 (en) * | 2003-12-30 | 2009-12-08 | Sandisk Corporation | Adaptive mode switching of flash memory address mapping based on host usage characteristics |
| US9153337B2 (en) | 2006-12-11 | 2015-10-06 | Marvell World Trade Ltd. | Fatigue management system and method for hybrid nonvolatile solid state memory system |
| KR101411499B1 (ko) * | 2008-05-19 | 2014-07-01 | 삼성전자주식회사 | 가변 저항 메모리 장치 및 그것의 관리 방법 |
| US7830726B2 (en) | 2008-09-30 | 2010-11-09 | Seagate Technology Llc | Data storage using read-mask-write operation |
| JP2012027649A (ja) * | 2010-07-22 | 2012-02-09 | Toshiba Corp | データ記憶装置及びデータ読み出し方法 |
| US9176800B2 (en) * | 2011-08-31 | 2015-11-03 | Micron Technology, Inc. | Memory refresh methods and apparatuses |
| JP2013246533A (ja) * | 2012-05-24 | 2013-12-09 | Sony Corp | 電子機器、メモリ管理システムおよびメモリ管理方法 |
| KR20140008702A (ko) | 2012-07-11 | 2014-01-22 | 삼성전자주식회사 | 불휘발성 메모리 장치 및 그것의 쓰기 방법 |
| US9424946B2 (en) * | 2013-02-08 | 2016-08-23 | Seagate Technology Llc | Non-volatile buffering to enable sloppy writes and fast write verification |
| US9430375B2 (en) * | 2013-12-30 | 2016-08-30 | International Business Machines Corporation | Techniques for storing data in bandwidth optimized or coding rate optimized code words based on data access frequency |
| KR102244618B1 (ko) * | 2014-02-21 | 2021-04-26 | 삼성전자 주식회사 | 플래시 메모리 시스템 및 플래시 메모리 시스템의 제어 방법 |
| US10127964B2 (en) * | 2014-07-03 | 2018-11-13 | Yale University | Circuitry for ferroelectric FET-based dynamic random access memory and non-volatile memory |
| JP6421042B2 (ja) * | 2015-01-16 | 2018-11-07 | ルネサスエレクトロニクス株式会社 | 情報処理装置 |
| US9524790B1 (en) * | 2015-08-02 | 2016-12-20 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Flash memory cells wear reduction |
| US10592114B2 (en) * | 2016-03-03 | 2020-03-17 | Samsung Electronics Co., Ltd. | Coordinated in-module RAS features for synchronous DDR compatible memory |
| US10031845B2 (en) | 2016-04-01 | 2018-07-24 | Intel Corporation | Method and apparatus for processing sequential writes to a block group of physical blocks in a memory device |
| US10019198B2 (en) | 2016-04-01 | 2018-07-10 | Intel Corporation | Method and apparatus for processing sequential writes to portions of an addressable unit |
| JP2018120346A (ja) * | 2017-01-24 | 2018-08-02 | 日本電気株式会社 | 情報処理システムおよび情報処理システムの制御方法 |
| US11099760B2 (en) * | 2017-12-14 | 2021-08-24 | Intel Corporation | Background data refresh using a system timestamp in storage devices |
| US10719248B2 (en) * | 2018-04-20 | 2020-07-21 | Micron Technology, Inc. | Apparatuses and methods for counter update operations |
| TW202001565A (zh) * | 2018-06-21 | 2020-01-01 | 慧榮科技股份有限公司 | 管理快閃記憶體模組的方法及相關的快閃記憶體控制器及電子裝置 |
| US10672452B2 (en) * | 2018-09-21 | 2020-06-02 | Micron Technology, Inc. | Temperature informed memory refresh |
| US10825534B2 (en) * | 2018-10-26 | 2020-11-03 | Intel Corporation | Per row activation count values embedded in storage cell array storage cells |
-
2020
- 2020-01-14 US US16/742,332 patent/US11200113B2/en not_active Expired - Fee Related
- 2020-09-07 JP JP2020150180A patent/JP7687768B2/ja active Active
- 2020-09-15 KR KR1020200118221A patent/KR20210091647A/ko active Pending
- 2020-09-21 CN CN202010997363.2A patent/CN113129949A/zh active Pending
- 2020-09-22 EP EP20197332.8A patent/EP3852109B1/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| EP3852109B1 (en) | 2025-04-30 |
| JP7687768B2 (ja) | 2025-06-03 |
| JP2021111333A (ja) | 2021-08-02 |
| US20200151052A1 (en) | 2020-05-14 |
| CN113129949A (zh) | 2021-07-16 |
| US11200113B2 (en) | 2021-12-14 |
| EP3852109A1 (en) | 2021-07-21 |
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