KR20210089916A - Ceramic Metal Heterojunction Arc Chamber for Power switch and Manufacturing Method Thereof - Google Patents

Abstract

By being formed by bonding a ceramic and a metal by applying a brazing filler paste without performing a plating process, the present invention comprises: one or more metal components; and a ceramic chamber wherein a junction part of the metal component is formed, and wherein a ceramicized metal layer and a wettable metal layer are sequentially formed at the junction part. After bonding the metal components to the ceramic chamber by inserting a brazing filler metal mixture between the junction part of the ceramic chamber, provided is a ceramic metal heterojunction arc chamber that allows the junction parts of the ceramic chamber and the metal components to be ceramic metal heterojunctions by a brazing junction part formed by performing a brazing heat treatment.

Description

Ceramic Metal Heterojunction Arc Chamber for Power Switch and Manufacturing Method Thereof

The present invention relates to a ceramic metal heterojunction arc chamber for a power switch, and more particularly, a ceramic metal heterojunction arc chamber for a power switch in which a ceramic and a metal are joined by applying a brazing filler paste without performing a plating process, and the same It's about the production method.

The arc chamber ass'y, a major component of power switches such as relays for power switchgear, functions to prevent or extinguish the arc that occurs during switching for opening and closing power in power lines or electric vehicles. .

The arc chamber for a power switch performing the above-described function in the prior art is a heat treatment at 1,400 ~ 1,500 ℃ in _{a H 2} /N _{2 mixed gas atmosphere for metallization of the ceramic bonding surface after MoMn paste is applied to the ceramic chamber.} After performing a metalizing process (metalizing), performing a pretreatment including pickling, water washing and washing, Ni plating is performed, a post treatment including water washing and washing is performed, followed by drying Ni plating, and stabilizing the plating layer And heat treatment is performed at 750 ~ 850℃ in a H ₂ /N ₂ mixed gas atmosphere to strengthen adhesion, and after assembling the parts in a brazing jig, after assembling the parts, for the ceramic-metal bonding by melting the filler metal H ₂ /N ₂ It is manufactured by performing a brazing heat treatment at 700 ~ 900 ℃ in a mixed gas atmosphere.

At this time, in the ceramic-metal heterojunction, the metallic material and the ceramic material have a metallic bond from a crystallographic point of view. However, in the ceramic material, because ions such as oxygen, sulfur, nitrogen and metal ions are covalently bonded, physically show markedly different characteristics.

In general, metal materials are oxidized with excellent electrical conductivity and ductile workability, but ceramic materials generally exhibit non-conductivity, have no ductile workability, and have excellent oxidation resistance. Because of the properties of these materials, the superior properties are maximized by brazing these two materials as described above.

Conventional brazing bonding methods between metal materials and ceramic materials are published in Ceramist, Vol. 4, No. 6, December 2006, 30 -36. As shown in Table 1, a metallization process in which a MoMn thin film is formed on the ceramic surface by applying a paste containing MoMn to the ceramic surface and then heat-treating it at a high temperature of 1,400° C. , a heat treatment process to improve the adhesion between the MoMn thin film and the Ni thin film, and a bonding process (brazing process) in which a brazing filler metal is inserted between the ceramic and the metal coated with the MoMn/Ni thin film and heat-treated. The ceramic and metal are joined together.

At this time, the brazing filler metal is an Ag-Cu alloy, and in Binary Alloy Phase Diagrams, American Society for Metals), 1986, the eutectic composition of Ag and Cu is Ag, 71.9 wt% and Cu, 28.1 wt% It is disclosed, Korean Patent Registration No. 10-0513303 discloses a method for manufacturing a brazing filler metal having an Ag content of 70 - 75 wt% and a Cu content of 28 - 30 wt%.

Since the ceramic material and the metal material are joined through a relatively long production process, there is a problem in that the production cost is high and the defect rate is high. In addition, when the arc chamber applied to the power circuit breaker is made of a ceramic metal heterojunction material, when the barrel plating process is performed during the brazing process of the ceramic metal heterojunction material, the ceramics collide with each other and cracks such as edge chipping occur. Occurs. In particular, the Ni plating process is not eco-friendly, such as the production process itself using strong acids to discharge poisonous wastewater, and the defect rate is relatively high, so it is important to eliminate this process.

As such, as a method for excluding the Ni plating process from the ceramic/metal brazing bonding process, a method of replacing the non-environmental Ni plating method with an environmentally friendly sputtering or vacuum deposition method may be considered. However, this method is not reasonable because it requires the use of relatively expensive vacuum sputtering or vacuum deposition, and the process cost is also known to be higher than that of the plating method.

Republic of Korea Patent No. 20136954

Ceramist, Vol. 4, No. 6, December 2006, 30 ~ 36 Binary Alloy Phase Diagrams, American Society for Metals), 1986

Therefore, the present invention is to solve the problems of the prior art described above, and in a ceramic-metal brazing bonding process for manufacturing an arc chamber for a power switch, by allowing a metal to be directly brazed to a ceramic coated with a MoMn metal thin film. It is a technical task to solve the problem of simplifying the manufacturing process by not performing the Ni plating and continuous heat treatment process, and to provide an economical ceramic metal heterojunction arc chamber for power switch and its manufacturing method by lowering the manufacturing cost and defect rate. .

One embodiment of the present invention to achieve the above-described technical problem, one or more parts; and a ceramic chamber in which a joint of the parts is formed, and a ceramized metal layer and a wettability metal layer are sequentially formed in the joint, wherein a brazing filler metal mixture is inserted between the parts and the joint of the ceramic chamber to After bonding to the ceramic chamber, there is provided a ceramic-metal heterojunction arc chamber, characterized in that the junctions of the ceramic chamber and the metal parts are hetero-bonded to the ceramic metal by a brazing joint formed by performing a brazing heat treatment.

The ceramic metallization layer is characterized in that it is a MoMn layer formed by applying a MoMn paste, which is a ceramic metallization metal, and then performing heat treatment.

The wettability metal layer is formed by applying a Ni paste as a wettability metal paste on the ceramic metallization layer and then heat-treating it.

The brazing joint may include: the ceramic metallization layer; the wettability metal layer; and a brazing filler metal pellet layer formed between the wettability metal layer and the metal parts by brazing heat treatment of the brazing filler metal mixture.

The brazing filler metal mixture, based on the total weight of Ag 68 to 75 wt%, Cu 22 to 30 wt%, the balance is characterized in that it comprises a Ni-Sn-P mixture and inevitable impurities.

In the Ni-Sn-P mixture, the Ni is 0.05 to 3 wt% based on the total weight, the Sn is 2 to 5 wt% based on the total weight, and the P is 0.005 to 0.3 wt% based on the total weight. .

The brazing filler metal mixture is 68 to 75 wt% of Ag, 22 to 30 wt% of Cu, 1 to 4 wt% of Ti, and the balance is composed of a Zn-Zr-Si mixture and unavoidable impurities with respect to the total weight of the brazing filler metal mixture do it with

In the Zn-Zr-Si mixture, the Zr is 0.5 to 2 wt% based on the total weight, the Zn is 1 to 4 wt% based on the total weight, and the Si is 0.5 to 2 wt% based on the total weight.

Another embodiment of the present invention to achieve the above-described technical problem, one or more metal parts and the junctions to which the metal parts are bonded are formed, the junction is sequentially formed with a ceramized metal layer and a wettability metal layer is formed in a ceramic chamber A method of manufacturing a ceramic metal heterojunction arc chamber comprising: a ceramic metallization layer forming step of forming a ceramic metallization layer by applying a ceramic metallization metal paste to a junction surface of the ceramic chamber and then performing heat treatment; forming a wettability metal layer by applying a wettability metal paste on an upper portion of the ceramic metallization layer and performing heat treatment to form a wettability metal layer; and inserting a brazing filler metal mixture into the ceramic chamber joint in which the wettability metal layer is formed to bond the metal parts; and a brazing heat treatment step in which the junctions of the ceramic chamber and the metal parts are hetero-bonded to a ceramic metal by a brazing junction formed by performing a bracing heat treatment. do.

The ceramic metallization layer forming step is characterized in that the ceramization metal layer is formed by applying a MoMn paste, which is a ceramic metallization metal, and then performing heat treatment.

In the forming of the wettability metal layer, a Ni paste as a wettability metal paste is applied on the ceramic metallization layer and then heat-treated to form the wettability metal layer.

The brazing joint formed in the brazing heat treatment step may include: the ceramic metallization layer; the wettability metal layer; and a brazing filler metal pellet layer formed between the wettability metal layer and the fixed contact terminal by brazing heat treatment of the brazing filler metal mixture.

The brazing filler metal mixture of the brazing heat treatment step, with respect to the total weight of Ag 68 to 75 wt%, Cu 22 to 30 wt%, the balance is characterized in that it comprises a Ni-Sn-P mixture and unavoidable impurities .

In the Ni-Sn-P mixture, the Ni is 0.05 to 3 wt% based on the total weight, the Sn is 2 to 5 wt% based on the total weight, and the P is 0.005 to 0.3 wt% based on the total weight. .

The brazing filler metal mixture of the brazing heat treatment step contains 68 to 75 wt% of Ag, 22 to 30 wt% of Cu, 1 to 4 wt% of Ti, and the balance of the Zn-Zr-Si mixture and unavoidable impurities, based on the total weight of the brazing filler metal mixture. It is characterized in that it is configured.

In the Zn-Zr-Si mixture, the Zr is 0.5 to 2 wt% based on the total weight, the Zn is 1 to 4 wt% based on the total weight, and the Si is 0.5 to 2 wt% based on the total weight.

The above-described ceramic metal heterojunction arc chamber for a power switch according to an embodiment of the present invention and a method for manufacturing the same, by enabling direct brazing bonding of metal to a ceramic coated with a MoMn metal thin film, Ni plating and subsequent heat treatment process It provides the effect of economically manufacturing a ceramic metal heterojunction arc chamber for a power switch by lowering the manufacturing cost and defect rate by simplifying the process by not performing pre-treatment and post-treatment operations for plating. .

In addition, in order to perform the plating process in the prior art, the Ni plating thickness deviation occurs depending on the management status of the plating solution and the plating bead, etc., and pre-treatment and post-treatment work are performed, so the ceramic metal heterojunction arc chamber for the power switch is manufactured Although the process was difficult, the ceramic metal heterojunction arc chamber for a power switch according to an embodiment of the present invention and a method for manufacturing the same have the effect of improving it to significantly facilitate the manufacture of the ceramic metal heterojunction arc chamber to provide.

In addition, in the method for manufacturing a ceramic metal heterojunction arc chamber for a power switch according to an embodiment of the present invention, the plating process is not performed, so that the ceramics collide with each other during barrel plating of the plating process to prevent cracks such as edge chipping Therefore, it provides the effect of significantly improving productivity by minimizing the occurrence of defects.

1 is a cross-sectional view of a ceramic metal heterojunction arc chamber 1 for a power switch according to an embodiment of the present invention.
2 is a SEM photograph of a cross-section of a ceramic metal heterojunction (A) between the fixed contact terminal 30 and the ceramic chamber 20 of FIG. 1 .
3 is a SEM photograph of a cross-section of a ceramic metal heterojunction (B) between the sealing cap 10 and the ceramic chamber 20 of FIG. 1 .
Figure 4 is a flowchart of a method of manufacturing a ceramic metal heterojunction chamber for a power switch according to an embodiment of the present invention.
5 is a SEM photograph of a ceramic-metal (oxygen-free copper rod) heterojunction of Example 1 of Experimental Example 1.
6 is a SEM photograph of the ceramic-metal heterojunction of the specimen of Comparative Example 1.

In the following description of the present invention, if it is determined that a detailed description of a related known function or configuration may unnecessarily obscure the gist of the present invention, the detailed description thereof will be omitted.

Since the embodiment according to the concept of the present invention may have various changes and may have various forms, specific embodiments will be illustrated in the drawings and described in detail in the present specification or application. However, this is not intended to limit the embodiment according to the concept of the present invention to a specific disclosed form, and it should be understood that the present invention includes all changes, equivalents, or substitutes included in the spirit and scope of the present invention.

When a component is referred to as being “connected” or “connected” to another component, it is understood that the other component may be directly connected or connected to the other component, but other components may exist in between. it should be On the other hand, when it is mentioned that a certain element is "directly connected" or "directly connected" to another element, it should be understood that the other element does not exist in the middle. Other expressions describing the relationship between elements, such as "between" and "immediately between" or "neighboring to" and "directly adjacent to", should be interpreted similarly.

The terms used herein are used only to describe specific embodiments, and are not intended to limit the present invention. The singular expression includes the plural expression unless the context clearly dictates otherwise. In this specification, terms such as "comprises" or "have" are intended to designate that the described features, numbers, steps, operations, components, parts, or combinations thereof exist, and include one or more other features or numbers. , it is to be understood that it does not preclude the possibility of the presence or addition of steps, operations, components, parts, or combinations thereof.

Hereinafter, embodiments of the present invention will be described in more detail with reference to the accompanying drawings.

In the description of one embodiment of the present invention, the sealing cap 10 and the fixed contact terminals 30 as examples of the metal parts constituting the ceramic metal heterojunction arc chamber for the power circuit breaker of the present invention will be described.

1 is a cross-sectional view of a ceramic metal heterojunction arc chamber 1 (hereinafter referred to as “arc chamber 1”) for a power switch according to an embodiment of the present invention, and FIG. 2 is a fixed contact terminal 30 of FIG. 1 . It is a SEM photograph of the cross section of the ceramic metal heterojunction (A) between the and the ceramic chamber 20, and FIG. 3 is a SEM photograph of the cross section of the ceramic metal heterojunction (B) between the sealing cap 10 and the ceramic chamber 20 of FIG. It's a photo.

1 to 3 , the arc chamber 1 is a sealing cup 10 and one or more fixed contact terminals 30 as examples of metal parts, and one or more fixed contact terminal insertion holes as examples of metal parts. 27 and the sealing cup coupling hole 29 are formed, and the ceramized metal layer 41 and the wettability metal layer 43 are sequentially formed on the surfaces of the first and second joint portions 21 and 23 of the ceramic chamber. The formed ceramic chamber 20 and the metal parts are formed by a brazing heat treatment performed after inserting a brazing filler metal mixture into the ceramic chamber by inserting a brazing filler metal mixture between the joint portions of the ceramic chamber 20 and forming the ceramic chamber. It characterized in that it is configured to include a brazing joint 40 for heterojunction of the joint parts and the metal parts to a ceramic metal.

Here, the ceramic metallization layer 41 may be a MoMn layer formed by applying a MoMn paste, which is a ceramic metallization metal, followed by heat treatment.

In addition, the wettability metal layer 43 may be a Ni layer formed by heat-treating a Ni paste as a wettability metal paste on the ceramic metallization layer.

And between the sealing cup junction part 11 of the sealing cup 10 and the fixed contact terminal junction part 31 of the fixed contact terminal 30, respectively, and the first junction part 21 and the second junction part 23 of the ceramic chamber A brazing joint portion 40 for joining the metal parts to the ceramic chamber 20 is formed.

The brazing joint 40 is formed by a brazing heat treatment of a ceramic metallization layer 41, a wettability metal layer 43 and a brazing filler metal mixture, whereby the wettability metal layer 43 and the metal parts are a sealing cup 10 and It may be configured to include a brazing filler metal pellet layer 45 formed between the surfaces of the junctions of the fixed contact terminals 30 .

In this case, the brazing filler metal mixture may include 68 to 75 wt% of Ag, 22 to 30 wt% of Cu, and the remainder including a Ni-Sn-P mixture and unavoidable impurities, based on the total weight. In the Ni-Sn-P mixture, the Ni is 0.05 to 3wt% based on the total weight, the Sn is 2 to 5wt% based on the total weight, and the P has a composition ratio of 0.005 to 0.3wt% based on the total weight can be mixed.

The brazing filler metal having the above-described composition has a low melting point and a process structure having a small grain size upon solidification, and thus has excellent mechanical properties.

The Ni has a face-centered cubic structure and is the same as Ag and Cu, forms an alloy easily, and has a low coefficient of thermal expansion of 13.4 μm/(mK). In addition, the melting point is high at 1,453 ℃, but when it is alloyed with Ag and Cu, the melting point is lowered, it does not show toxicity, and the price is not so high. In particular, Ni has excellent chemical bonding in that it forms a Ni layer on the MoMn thin film in the existing production process shown in Table 1, and the metals to be deposited are mainly Invar and oxygen-free copper, and these and Ni are easily alloyed. have

The content of Ni is 0.05 wt% to 3 wt% with respect to the total weight, and when the content is less than this, the effect of addition is small, and when the content is higher than this, the melting point is high, which is not preferable.

Next, the Sn has a low melting point of 232° C. and has good fluidity and wettability when dissolved to facilitate brazing bonding.

The content of Sn is 2 wt% to 5 wt% based on the total weight, and when the content is less than this, the effect of addition is small, and when the content is higher than this, there is a disadvantage in that the mechanical strength is relatively lowered.

The P is a non-metal element with a very low melting point of 115 ° C., so it is not suitable as a constituent element. However, it acts as a strong reducing agent with a Pauling coefficient of 2,58 and when added in small amounts, reduces the oxide on the surface of the metal to be deposited or the MoMn film It performs the function of helping the welding by making it have a clean surface.

The content of P is preferably 0.005 wt % to 0.3 wt % with respect to the total weight, and when the content is less than this, the effect of addition is small, and when the content is higher than this, the alloy becomes brittle and difficult to process. not,

In contrast, the brazing filler metal mixture contains 68 to 75 wt% of Ag, 22 to 30 wt% of Cu, 1 to 4 wt% of Ti, and the balance of the brazing filler metal mixture, based on the total weight, including a Zn-Zr-Si mixture and unavoidable impurities. could be In the Zn-Zr-Si mixture, the Zr is 0.5 to 2 wt% based on the total weight, the Zn is 1 to 4 wt% based on the total weight, and the Si is mixed to have a composition ratio of 0.5 to 2 wt% based on the total weight. can be

The brazing filler metal having the above-described composition has a low melting point and a process structure having a small grain size upon solidification, and thus has excellent mechanical properties.

Zr has a hexagonal crystal structure similar to Ti, and has a Pauling scale indicating activity of 1.33, which is lower than 1.54 of Ti, and thus has a higher activity, and thus has a high reactivity with ceramics and metals.

The content of Zr is 0.5wt% to 2wt% with respect to the total weight, and when the content is less than this, the effect of addition is small, and when the content is higher than this, there is a disadvantage in that workability is deteriorated, which is not preferable.

Next, the Zn has a hexagonal crystal structure like Ti, has a fouling coefficient of 1.65, shows some reactivity, and has a melting point as low as 419° C., so that when added, it functions to lower the deposition temperature.

The content of Zn is 1 wt% to 4 wt%, and when the content is less than this, the effect of addition is small, and when the content is higher than this, there is a disadvantage in that the bonding strength is lowered, which is not preferable.

The Si has a face-centered cubic structure and has a high melting point of 1,414° C., but forms an alloy with Ag and Cu, and has a low coefficient of thermal expansion of 2.6 μm/(mK). In addition, it does not show toxicity and the price is not very high.

The Si content is 0.5 to 2 wt%, and when the content is less than this, the effect of addition is small, and when the content is higher than this, there is a disadvantage in that workability is deteriorated, which is not preferable.

The metal to be brazed to the ceramic chamber may be oxygen-free copper or Invar. If the alloy composition of the above-described brazing filler metal is deviated, the melting point becomes too high, which is not economical.

In one embodiment of the present invention, the brazing filler metal mixture is formed by adding an Ag-Cu alloy or Ag-Cu-Ti alloy and the Ni-Sn-P or Zr-Zn-Si and an appropriate element as a brazing filler metal. It can also be machined from a component alloy sheet.

4 is a flowchart of a method of manufacturing a ceramic metal heterojunction chamber for a power switch according to an embodiment of the present invention.

As shown in FIG. 4, in the method for manufacturing a ceramic metal heterojunction chamber for a power switch of an embodiment of the present invention, one or more metal parts and junctions to which the metal parts are joined are formed, and the ceramized metal layer and wettability are sequentially formed at the junction. A method for manufacturing a ceramic metal heterojunction arc chamber including a ceramic chamber in which a metal layer is formed, the method comprising: forming a ceramic metallization layer (S10), forming a wettability metal layer (S20), assembling a metal part (S30) and brazing It is characterized in that it is configured to include a heat treatment step (S40).

Specifically, in the step of forming the ceramic metal layer ( S10 ), a ceramic metallization metal paste is applied to the surfaces of the first and second joint portions 21 and 24 of the ceramic chamber 20 and then heat-treated to form the ceramic metallization layer 41 . ) to form As an example of the ceramic metallization layer forming step (S10), a MoMn paste as a ceramic metal paste is applied to the surfaces of the first and second joint portions 21 and 24 of the ceramic chamber 20, and then the ceramic joint surface is metallized. For H ₂ /N _{2 It} may be a step of forming a MoMn layer formed by a metalizing process (metalizing) to perform a heat treatment at 1,400 ~ 1,500 ℃ in a mixed gas atmosphere.

The wettability metal layer forming step ( S20 ) is a step of forming the wettability metal layer 43 by applying a wettability metal paste on the ceramic metallization layer 41 and performing heat treatment. As an example of the wettability metal layer forming step (S20), a Ni paste formed by mixing Ni, an example of a wettability metal, with organic additives is applied on the ceramic metallization layer 41, and then the organic additive is degreased to obtain adhesion. In order to strengthen the H ₂ /N ₂ by performing a heat treatment at 750 ~ 850 °C in a mixed gas atmosphere, it may be a step of forming a Ni layer, which is an example of the wettability metal layer 43 .

In the metal component assembly step (S30), the sealing cup 10, the fixed contact terminal 30, etc. are combined by injecting a brazing filler metal mixture into the ceramic chamber junction in which the wettability metal layer is formed in the brazing jig. It may be a step to

Next, in the brazing heat treatment step ( S40 ), the junction parts 21 and 23 of the ceramic chamber 20 and the metal parts are heterogeneously joined to the ceramic metal by the brazing junction parts 40 formed by performing the brazing heat treatment. may be a step. In this case, the brazing heat treatment may be performed at 700 to 900° C. in _{a H 2} /N ₂ mixed gas atmosphere for ceramic-metal heterojunction bonding between ceramics by melting of the brazing filler metal.

<Experimental Example 1>

The present invention will be described in detail with examples. In this embodiment, only alumina ceramics coated with a MoMn thin film are posted, but other types of ceramics that can be coated with a MoMn thin film, for example, silica, magnesia, zirconia, and alloys thereof can also be applied to On the other hand, as a comparative example, a conventional Ag-Cu alloy to which Ni is not added, that is, a brazing filler metal having a composition in which Ag is 72 wt% and Cu is the remaining amount was prepared and used.

Example 1.

The alloy was melted/cast using an induction furnace with a composition containing 0.05 wt% of Ni, 5 wt% of Sn, 0.005 wt% of P, 68 wt% of Ag, and the remaining amount of Cu. Ar was blown to reduce oxidation during melting. The melted ingot was cold rolled to a thickness of 2 mm using a cold rolling mill. The cold-rolled sheet was heat-treated for 30 minutes in a hydrothermal treatment furnace heated to 600°C. The heat-treated rolled plate was rolled to a thickness of 0.1 mm using a precision rolling mill to prepare a brazing filler alloy plate. The rolled plate was cut to a size of 1 cm x 1 cm in a wire shade method to prepare a final filler plate.

Prepare a 1 cm x 1 cm x 5 cm alumina rod (71) and 1 cm x 1 cm x 5 cm processed anaerobic copper (81), coated with a MoMn thin film on the 1 cm x 1 cm surface, and prepare MoMn The thin film-coated surface was placed in contact with the oxygen-free copper 81, and a brazing filler alloy plate having a size of 10 cm x 10 cm x 0.1 mm prepared above was inserted therebetween. In this state, it was charged in hydrothermal treatment and then welded at 850°C for 5 minutes.

For the weld-treated specimens, the breaking strength was measured using a four-point breaking strength measurement method, and the results are shown in Table 1.

Example 2.

The alloy was melted/cast using an induction furnace with a composition in which Ni was 1 wt%, Sn was 4 wt%, P was 0.015 wt%, Ag was 70 wt%, and Cu was the remaining amount. Then, a final brazing filler alloy plate was prepared in the same manner as in Example 1.

In the same manner as in Example 1, prepare an alumina rod 81 coated with a MoMn thin film and an Invar processed to a size of 1 cm x 1 cm x 5 cm, and contact the MoMn thin film-coated surface with the Invar alloy rod. After mounting, the previously prepared 10 cm x 10 cm x 0.1 mm brazing filler alloy plate was inserted between them. In this state, it was charged in hydrothermal treatment and then welded at 850°C for 5 minutes.

For the weld-treated specimens, the breaking strength was measured using a four-point breaking strength measurement method, and the results are shown in Table 1.

In addition, the cross section of the weld-treated specimen was observed using a scanning electron microscope.

Example 3.

The alloy was melted/cast using an induction furnace with a composition in which Ni was 3wt%, Sn was 2wt%, P was 0.03wt%, Ag was 75wt%, and Cu was the remaining amount. Then, a final brazing filler alloy plate was prepared in the same manner as in Example 1.

In the same manner as in Example 1, an alumina rod 81 coated with a MoMn thin film and an oxygen-free copper processed to a size of 1 cm x 1 cm x 5 cm were prepared, and the MoMn thin film-coated surface was placed in contact with the oxygen-free copper rod. Then, a brazing filler alloy plate having a size of 10 cm x 10 cm x 0.1 mm prepared above was inserted in between. In this state, it was charged in hydrothermal treatment and then welded at 850°C for 5 minutes.

For the weld-treated specimens, the breaking strength was measured using a four-point breaking strength measurement method, and the results are shown in Table 1.

Example 4.

The alloy was melted/cast using an induction furnace with a composition in which Ni was 1 wt%, Sn was 4 wt%, P was 0.015 wt%, Ag was 70 wt%, and Cu was the remaining amount. Then, a final brazing filler alloy plate was prepared in the same manner as in Example 1.

In the same way as in Example 1, an alumina rod coated with a MoMn thin film and SUS 304 processed to a size of 1 cm x 1 cm x 5 cm were prepared, and the MoMn thin film coated surface was placed in contact with an Invar alloy rod. In the meantime, a brazing filler alloy plate having a size of 10 cm x 10 cm x 0.1 mm prepared above was inserted. In this state, it was charged in hydrothermal treatment and then welded at 850°C for 5 minutes.

For the weld-treated specimens, the breaking strength was measured using a four-point breaking strength measurement method, and the results are shown in Table 1.

Comparative Example 1.

The alloy was melted/cast using an induction furnace with a composition in which Ag was 72 wt% and Cu was the remaining amount. Then, a final brazing filler alloy plate was prepared in the same manner as in Example 1.

In the same way as in Example 1, an alumina rod coated with a MoMn thin film and an Invar alloy rod processed to a size of 1 cm x 1 cm x 5 cm were prepared, mounted so that the MoMn thin film coated surface and Invar were in contact, and then in between. The prepared 10 cm x 10 cm x 0.1 mm size of the brazing filler alloy plate was inserted. In this state, it was charged in hydrothermal treatment and then welded at 850°C for 5 minutes.

For the weld-treated specimens, the breaking strength was measured using a four-point breaking strength measurement method, and the results are shown in Table 1.

Psalm number Breaking strength at 4 points (kgf/cm ² ) Example 1 352 Example 2 367 Example 3 378 Example 4 365 comparative example 121

In addition, the cross section of the weld-treated specimen was observed using a scanning electron microscope.

<Experimental Example 2>

The present invention will be described in detail with examples. In this embodiment, only alumina ceramics coated with a MoMn thin film are posted, but other types of ceramics that can be coated with a MoMn thin film, for example, silica, magnesia, zirconia, and alloys thereof can also be applied to

On the other hand, as a comparative example, an active metal brazing agent having the composition of Ag 47wt%, Sn 5wt%, In 7wt%, Ti 3wt%, and the remainder copper published in Republic of Korea Patent No. 10-0138444 was prepared, thereby performing brazing bonding between the ceramic and metal. A filler metal that can be prepared was prepared.

Example 5.

The alloy was melted/cast using a vacuum induction furnace with a composition in which Ti was 4wt%, Zr was 1wt%, Zn was 2wt%, Si was 1wt%, Ag was 68wt%, and Cu was the remaining amount. The melted ingot was cold rolled to a thickness of 2 mm using a cold rolling mill. The cold-rolled sheet was heat-treated for 30 minutes in a hydrogen heat treatment furnace heated to 600 °C. The heat-treated rolled plate was rolled to a thickness of 0.1 mm using a precision rolling mill to prepare a filler alloy plate for brazing. This rolled plate was cut to a size of 1 cm x 1 cm in a wire shade method to prepare a final filler alloy plate.

Prepare an alumina rod with a size of 1 cm x 1 cm x 5 cm and an anaerobic copper (81) (oxygen-free copper rod) processed to a size of 1 cm x 1 cm x 5 cm, and bring the alumina rod (71) into contact with the anaerobic anaerobic copper (81). After mounting, the filler alloy plate having the size of 10 cm x 10 cm x 0.1 mm prepared earlier was inserted between them.

For the weld-treated specimens, the breaking strength was measured using a four-point breaking strength measurement method, and the results are shown in Table 2.

Example 6.

The alloy was melted/cast using a vacuum induction furnace with a composition in which Ti was 2wt%, Zr was 2wt%, Zn was 1wt%, Si was 0.5wt%, Ag was 70wt%, and Cu was the remaining amount. Then, a final filler alloy plate was prepared in the same manner as in Example 5.

In the same manner as in Example 5, an alumina rod and Invar processed to a size of 1 cm x 1 cm x 5 cm were prepared, and the alumina rod and Invar alloy rod were placed in contact with each other, and in between, the previously prepared 10 cm x 10 cm x A filler alloy plate having a size of 0.1 mm was inserted. In this state, it was charged in vacuum heat treatment, and then ^{welding was performed at a vacuum degree of 5 x 10 -5} torr, 850 °C for 5 minutes.

For the weld-treated specimens, the breaking strength was measured using the 4-point breaking strength measurement method, and the results are shown in Table 2.

Example 7.

The alloy was melted/cast using a vacuum induction furnace with a composition of 1 wt% Ti, 0.5 wt% Zr, 4 wt% Zn, 2 wt% Si, 75 wt% Ag, and the remaining amount of Cu. Then, a final filler alloy plate was prepared in the same manner as in Example 5.

In the same manner as in Example 5, an alumina rod and Invar processed to a size of 1 cm x 1 cm x 5 cm were prepared, and the alumina rod and Invar alloy rod were placed in contact with each other, and in between, the previously prepared 10 cm x 10 cm x A filler alloy plate having a size of 0.1 mm was inserted. In this state, it was charged in vacuum heat treatment and then ^{welding was performed at a vacuum degree of 5 x 10 -5} torr, 850 °C for 5 minutes.

For the weld-treated specimens, the breaking strength was measured using a four-point breaking strength measurement method, and the results are shown in Table 2.

Example 8.

The alloy was melted/cast using a vacuum induction furnace with a composition in which Ti was 3wt%, Zr was 1wt%, Zn was 2wt%, Si was 1wt%, Ag was 70wt%, and Cu was the remaining amount. Then, a final filler alloy plate was prepared in the same manner as in Example 5.

In the same manner as in Example 5, an alumina rod and Invar processed to a size of 1 cm x 1 cm x 5 cm were prepared, and the alumina rod and Invar alloy rod were placed in contact with each other, and in between, the previously prepared 10 cm x 10 cm x A filler alloy plate having a size of 0.1 mm was inserted. In this state, it was charged in vacuum heat treatment and then ^{welding was performed at a vacuum degree of 5 x 10 -5} torr, 850 °C for 5 minutes.

For the weld-treated specimens, the breaking strength was measured using a four-point breaking strength measurement method, and the results are shown in Table 2.

Comparative Example 2.

The alloy was melted/cast using a vacuum induction furnace with the composition of Ag 47wt%, Sn 5wt%, In 7wt%, Ti 3wt%, and the remainder copper. Then, a final filler alloy plate was prepared in the same manner as in Example 5.

In the same manner as in Example 5, an alumina rod having a size of 1 cm x 1 cm x 5 cm and an Invar alloy rod processed to a size of 1 cm x 1 cm x 5 cm were prepared and placed in contact with the alumina rod and Invar. Then, the filler alloy plate with the size of 10 cm x 10 cm x 0.1 mm prepared above was inserted between them. In this state, it was charged in vacuum heat treatment, and then welding was performed at a vacuum degree of 5 x 10-5 torr, 850 °C for 5 minutes.

For the weld-treated specimens, the breaking strength was measured using a four-point breaking strength measurement method, and the results are shown in Table 2.

Psalm number Breaking strength at 4 points (kgf/cm ² ) Example 5 343 Example 6 362 Example 7 345 Example 8 365 Comparative Example 2 221

In addition, the cross section of the weld-treated specimen was observed using a scanning electron microscope.

5 is an SEM photograph of the ceramic-metal (oxygen-free copper rod) heterojunction of Example 1 of Experimental Example 1, and FIG. 6 is an SEM photograph of the ceramic-metal heterojunction of the specimen of Comparative Example 1.

Comparing the microstructure of the above embodiment and the comparative example, in the case of Example 2, as shown in FIG. 2, the filler metal is filled between the MoMn thin film coated on the ceramic alumina rod 81 and the oxygen-free copper rod 71, AgCuNiSnP-based filler metal pellets. 45 was formed, and a ceramic metallization layer 41, which was a reactive layer (MoMn film (MoMn metallizing layer)) having an average thickness of 7.9 μm, was formed on the surface of the ceramic alumina rod 71 in contact with the filler metal, and the reaction A Ni layer 43 was formed on top of the layer. However, in Comparative Example 1 to which the AgCu-based filler metal is applied, it can be seen that the AgCu-based filler metal pellets 61 are incompletely filled. As a result, it was confirmed that the Example in which Ni, Sn and P were added also increased the breaking strength compared to the Comparative Example in which they were not added.

In addition, with respect to the arc chamber (1) manufactured according to the present invention, the degree of vacuum in the vacuum chamber is ×10 ^-2 torr or less, and the leakage test is performed by applying He gas and securing 10-8 atm cc/min or less of the increase rate of He gas. A He gas leak test was performed, and there was no leakage as a result of the He gas leak test, and the leak performance, bonding strength, and wettability of filler metal all showed the same level as the arc chamber manufactured by performing conventional Ni plating.

In the description of the embodiment of the present invention, an alumina ceramic has been described as an example of the ceramic, but the ceramic to which the present invention is applied may be other types of ceramic, for example, silica, magnesia, zirconia, and alloys thereof.

Although the technical spirit of the present invention described above has been specifically described in the preferred embodiment, it should be noted that the embodiment is for the description and not the limitation. In addition, those of ordinary skill in the technical field of the present invention will understand that various embodiments are possible within the scope of the technical spirit of the present invention. Therefore, the true technical protection scope of the present invention should be determined by the technical spirit of the appended claims.

1: arc chamber
10: sealing cup
11: Sealing cup joint
20: ceramic chamber
21: first junction
23: second junction
27: fixed contact terminal insertion hole
29: sealing cup coupling hole
30: fixed contact terminal
31: fixed contact terminal junction
40: brazing joint
41: ceramic metallization layer (MoMn layer)
43: Ni layer (wetting metal layer)
45: brazing filler metal pellet layer (AgCuZrZnSi-based or AgCuNiSnP-based filler metal pellet layer)
60: AgCu brazing joint
61: AgCu filler metal pellets
63: Ni layer
65: MoMn film (MoMn metallizing layer)
71: anaerobic copper
81: alumina rod

Claims (12)

one or more metal parts; and
a ceramic chamber in which a junction of the metal parts is formed, and a ceramized metal layer and a wettable metal layer are sequentially formed in the junction;
After the metal parts are bonded to the ceramic chamber by inserting a brazing filler metal mixture between the junction parts of the ceramic chamber, the junction parts of the ceramic chamber and the metal parts are connected by a brazing joint formed by performing a brazing heat treatment. Ceramic metal heterojunction arc chamber, characterized in that the ceramic metal heterojunction. According to claim 1, wherein the ceramic metallization layer,
A ceramic metal heterojunction arc chamber, characterized in that it is a MoMn layer formed by applying a MoMn paste, which is a ceramic metallization metal, and then performing heat treatment. The method of claim 1, wherein the wettable metal layer comprises:
A ceramic metal heterojunction arc chamber, characterized in that it is formed by heat-treating after coating a Ni paste as a wettability metal paste on the ceramic metallization layer. According to claim 1, wherein the brazing joint,
the ceramic metallization layer;
the wettability metal layer; and
and a brazing filler metal pellet layer formed between the wettability metal layer and the metal parts by brazing heat treatment of the brazing filler metal mixture. According to claim 1, wherein the brazing filler metal mixture,
Ag is 68 to 75 wt%, Cu is 22 to 30 wt% based on the total weight, and the balance contains a Ni-Sn-P mixture and inevitable impurities,
In the Ni-Sn-P mixture, the Ni is 0.05 to 3wt% based on the total weight, the Sn is 2 to 5wt% based on the total weight, and the P is 0.005 to 0.3wt% based on the total weight, characterized in that Ceramic metal heterojunction arc chamber. According to claim 1, wherein the brazing filler metal mixture,
Based on the total weight, Ag is 68 to 75 wt%, Cu is 22 to 30 wt%, Ti is 1 to 4 wt%, and the balance contains a Zn-Zr-Si mixture and unavoidable impurities,
In the Zn-Zr-Si mixture, the Zr is 0.5 to 2wt% based on the total weight, the Zn is 1 to 4wt% based on the total weight, and the Si is 0.5 to 2wt% based on the total weight Ceramic, characterized in that Metal Heterojunction Arc Chamber. A method of manufacturing a ceramic metal heterojunction arc chamber comprising a ceramic chamber in which one or more metal parts and joints to which the metal parts are joined are formed, and a ceramized metal layer and a wettability metal layer are sequentially formed in the joint,
a ceramic metallization layer forming step of forming a ceramic metallization layer by applying a ceramic metallization metal paste to the surface of the junction part of the ceramic chamber and then performing heat treatment;
forming a wettability metal layer by applying a wettability metal paste on an upper portion of the ceramic metallization layer and performing heat treatment to form a wettability metal layer; and
a metal part assembly step of inserting a brazing filler metal mixture into the ceramic chamber joint in which the wettability metal layer is formed to bond the metal parts; and
The ceramic metal heterojunction arc chamber manufacturing method, characterized in that it comprises a brazing heat treatment step in which the junctions of the ceramic chamber and the metal parts are heterojunctioned to a ceramic metal by a brazing junction formed by performing a brazing heat treatment. The method of claim 7, wherein the forming of the ceramic metallization layer comprises:
A method of manufacturing a ceramic metal heterojunction arc chamber, characterized in that a ceramized metal layer, which is a MoMn layer formed by applying a MoMn paste, which is a ceramic metallized metal, is applied and then heat treatment is performed. The method of claim 7, wherein the step of forming the wettability metal layer comprises:
A method of fabricating a ceramic metal heterojunction arc chamber, characterized in that the wettability metal layer is formed by applying a Ni paste as a wettability metal paste on the ceramic metallization layer and then heat-treating it. According to claim 7, The brazing joint formed in the brazing heat treatment step,
the ceramic metallization layer;
the wettability metal layer; and
Ceramic metal heterojunction arc chamber manufacturing method, characterized in that it comprises a brazing filler metal pellet layer formed between the wettability metal layer and the fixed contact terminal by the brazing heat treatment of the brazing filler metal mixture. 8. The method of claim 7,
The brazing filler metal mixture of the brazing heat treatment step contains 68 to 75 wt% of Ag, 22 to 30 wt% of Cu, and the remainder of the total weight, the Ni-Sn-P mixture and unavoidable impurities,
In the Ni-Sn-P mixture, the Ni is 0.05 to 3wt% based on the total weight, the Sn is 2 to 5wt% based on the total weight, and the P is 0.005 to 0.3wt% based on the total weight, characterized in that A method of fabricating a ceramic metal heterojunction arc chamber. 8. The method of claim 7,
The brazing filler metal mixture of the brazing heat treatment step contains 68 to 75 wt% of Ag, 22 to 30 wt% of Cu, 1 to 4 wt% of Ti, and the balance of the Zn-Zr-Si mixture and unavoidable impurities, based on the total weight of the brazing filler metal mixture. and,
In the Zn-Zr-Si mixture, the Zr is 0.5 to 2wt% based on the total weight, the Zn is 1 to 4wt% based on the total weight, and the Si is 0.5 to 2wt% based on the total weight Ceramic, characterized in that A method of fabricating a metal heterojunction arc chamber.

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