KR20210085234A - Organic light emitting displays device - Google Patents

Abstract

The present invention provides an organic light emitting display device that includes: a display panel comprising a display part displaying an image and a non-display part surrounding the display part; a first thin film transistor disposed in the sub-pixel of the display part; a first hydrogen getter layer disposed on the first thin film transistor and connected to source/drain electrodes of the first thin film transistor; and a lower electrode disposed on the first hydrogen getter layer and connected to the first hydrogen getter layer; an organic light emitting element including an organic light emitting layer and an upper electrode, and a passivation layer covering the organic light emitting element. Accordingly, it is possible to prevent the threshold voltage of the thin film transistor from being changed due to the diffusion of hydrogen remaining in the passivation layer.

Description

Organic light emitting display device {ORGANIC LIGHT EMITTING DISPLAYS DEVICE}

The present invention relates to an organic light emitting diode display, and more particularly, to an organic light emitting diode display having improved reliability by including a hydrogen getter layer.

The organic light emitting display device is a self-emission type display device, which has superior viewing angle, contrast ratio, etc. compared to a liquid crystal display device (LCD), does not require a separate backlight, can be lightweight and thin, and has advantageous power consumption.

The organic light emitting diode display includes a plurality of pixel regions, in which thin film transistors are formed. Thin film transistors mainly form the active layer with a semiconductor material such as amorphous silicon, but as a display device with a large area and high resolution is recently required, the active layer is made of an oxide semiconductor material with excellent electrical properties such as mobility and off current. The oxide thin film transistor to be formed is being utilized.

On the other hand, since the organic light emitting diode display includes organic light emitting devices formed in a plurality of pixel regions, it is very vulnerable to oxygen and moisture. Accordingly, a passivation layer is formed to cover the organic light emitting elements in order to prevent oxygen, moisture, and the like from penetrating into the organic light emitting elements from the outside. A large amount of hydrogen (H) remaining in the passivation layer is diffused over time. There is a problem in that electrical characteristics of oxide thin film transistors for driving organic light emitting devices are changed by the diffused hydrogen.

As a thin film layer used as a passivation layer for protecting the organic light emitting device from moisture and oxygen, silicon nitride, silicon oxynitride, silicon oxide, aluminum oxide, or the like may be used. The passivation layer may be formed by a thin film deposition process such as plasma chemical vapor deposition (PECVD).

When an insulating material such as silicon nitride or silicon oxynitride is deposited as a passivation layer for protecting an organic light emitting device by a plasma chemical vapor deposition process, the process temperature is limited to 100° C. or less due to a thermal damage problem of the organic light emitting layer. A lot of hydrogen contained in the remains.

The hydrogen remaining in the passivation layer diffuses over time to reduce the oxide semiconductor material constituting the active layer of the oxide thin film transistor. The reduction of the oxide semiconductor material eventually causes a shift in the threshold voltage of the oxide thin film transistor. The shift degree of the threshold voltage is out of the circuit compensation range and affects the image, causing unevenness or luminance deviation. Accordingly, the hydrogen diffusion problem is a major cause of lowering the reliability of the organic light emitting diode display.

Accordingly, the inventors of the present invention have invented a new structure of an organic light emitting diode display capable of preventing a shift in the threshold voltage of an oxide thin film transistor due to hydrogen remaining in the passivation layer.

SUMMARY OF THE INVENTION An object of the present invention is to provide an organic light emitting diode display with improved reliability and maintaining a threshold voltage of an oxide thin film transistor because an oxide semiconductor layer is not reduced by hydrogen remaining in a passivation layer.

The objects of the present invention are not limited to the above-mentioned objects, and other objects and advantages of the present invention not mentioned may be understood by the following description, and will be more clearly understood by the examples of the present invention. Moreover, it will be readily apparent that the objects and advantages of the present invention may be realized by the means and combinations thereof indicated in the claims.

An organic light emitting diode display according to an exemplary embodiment includes a first thin film transistor disposed on a sub-pixel of a display unit of a display panel, the first thin film transistor disposed on the first thin film transistor, and connected to source/drain electrodes of the first thin film transistor. and an organic light emitting device including a first hydrogen getter layer, and a lower electrode disposed on the first hydrogen getter layer and connected to the first hydrogen getter layer, an organic light emitting layer, and an upper electrode. With this structure, it is possible to prevent the threshold voltage of the first thin film transistor from being shifted by hydrogen remaining in the passivation layer covering the organic light emitting diode.

An organic light emitting diode display according to an exemplary embodiment includes a first thin film transistor disposed on a sub-pixel of a display unit of a display panel, the first thin film transistor disposed on the first thin film transistor, and connected to source/drain electrodes of the first thin film transistor. an organic light emitting device including a first hydrogen getter layer, a lower electrode disposed on the first hydrogen getter layer and connected to the first hydrogen getter layer, an organic light emitting layer and an upper electrode, and a gate driver of a non-display unit of a display panel a second thin film transistor disposed on the second thin film transistor; and a second hydrogen getter layer disposed on the second thin film transistor. With this structure, it is possible to prevent the threshold voltage of the first thin film transistor and the threshold voltage of the second thin film transistor from being shifted by hydrogen remaining in the passivation layer covering the organic light emitting diode.

According to the present invention, by forming a hydrogen getter layer between the organic light emitting diode and the oxide thin film transistor, diffusion of residual hydrogen in the passivation layer to the oxide thin film transistor is prevented, thereby preventing a shift in the threshold voltage of the oxide thin film transistor, and organic light emitting display The reliability of the device can be improved.

In addition, according to the present invention, by disposing a hydrogen getter layer between the lower electrode of the organic light emitting diode and the drain electrode of the oxide thin film transistor and electrically connecting to each other, delay and distortion of the signal during driving of the organic light emitting diode are prevented. It is possible to block the diffusion of residual hydrogen while preventing it.

In addition to the above-described effects, the specific effects of the present invention will be described together while describing specific details for carrying out the invention below.

1 is a block diagram schematically illustrating an organic light emitting display device.
FIG. 2 is a plan view schematically illustrating a connection and arrangement relationship of components constituting an organic light emitting diode display.
3 is a schematic cross-sectional view illustrating a sub-pixel disposed in a display unit of an organic light emitting diode display according to an exemplary embodiment.
4 to 6 are schematic cross-sectional views illustrating a portion of a non-display portion of an organic light emitting diode display according to example embodiments.
7 to 10 are schematic plan views illustrating a portion of a non-display portion of an organic light emitting diode display according to example embodiments.

The above-described objects, features and advantages will be described below in detail with reference to the accompanying drawings, and accordingly, those of ordinary skill in the art to which the present invention pertains will be able to easily implement the technical idea of the present invention. In describing the present invention, if it is determined that a detailed description of a known technology related to the present invention may unnecessarily obscure the gist of the present invention, the detailed description will be omitted. Hereinafter, preferred embodiments according to the present invention will be described in detail with reference to the accompanying drawings. In the drawings, the same reference numerals are used to refer to the same or similar components.

In the following, that an arbitrary component is disposed on the "upper (or lower)" of a component or "upper (or below)" of a component means that any component is disposed in contact with the upper surface (or lower surface) of the component. Furthermore, it may mean that other components may be interposed between the component and any component disposed on (or under) the component.

Also, when it is described that a component is "connected", "coupled" or "connected" to another component, the components may be directly connected or connected to each other, but other components are "interposed" between each component. It is to be understood that “or, each component may be “connected,” “coupled,” or “connected” through another component.

According to the present invention, since the oxide semiconductor layer is not reduced by hydrogen remaining in the passivation layer, the threshold voltage of the oxide thin film transistor is maintained, and an organic light emitting diode display with improved reliability can be provided.

An organic light emitting diode display according to an exemplary embodiment includes a display panel including a display unit displaying an image and a non-display unit surrounding the display unit, a first thin film transistor disposed in a sub-pixel of the display unit, and the first thin film transistor a first hydrogen getter layer disposed on and connected to the source/drain electrodes of the first thin film transistor, and a lower electrode disposed on the first hydrogen getter layer and connected to the first hydrogen getter layer; and an organic light emitting device including an organic light emitting layer and an upper electrode, and a passivation layer covering the organic light emitting device.

A thickness of the first hydrogen getter layer may be greater than a thickness of the lower electrode. The first hydrogen getter layer may be formed of a material different from that of the lower electrode. An area of the first hydrogen getter layer may be the same as an area of the lower electrode.

In an organic light emitting diode display according to an embodiment of the present invention, the first planarization layer includes a first contact hole through which the first hydrogen getter layer is connected to the source/drain electrodes, and the lower electrode includes the first hydrogen getter layer. A second planarization layer may further include a second planarization layer including a second contact hole connected to the layer, wherein the second contact hole overlaps at least a portion of the first contact hole.

The organic light emitting diode display according to an embodiment of the present invention may further include a gate driver positioned on at least one side of the display unit and including a second thin film transistor, and a second hydrogen getter layer disposed on the second thin film transistor. can

The second hydrogen getter layer and the first hydrogen getter layer may be disposed on the same layer and formed of the same material. The second hydrogen getter layer may be connected to the source/drain electrodes of the second thin film transistor.

The organic light emitting diode display according to an embodiment of the present invention may further include a ground line disposed on the non-display portion, and the second hydrogen getter layer may be connected to the ground line.

The second hydrogen getter layer may be disposed on the entire area of the gate driver in the form of a single plate. Alternatively, the second hydrogen getter layer may include a plurality of second hydrogen getter layers spaced apart from each other on the gate driver.

A display panel including a display unit displaying an image and a non-display unit surrounding the display unit, a first thin film transistor disposed in a sub-pixel of the display unit, and a first thin film transistor disposed on the first thin film transistor according to an embodiment of the present invention Organic comprising a first hydrogen getter layer connected to the source/drain electrodes of the first thin film transistor, a lower electrode disposed on the first hydrogen getter layer and connected to the first hydrogen getter layer, an organic light emitting layer, and an upper electrode a light emitting device, a second thin film transistor disposed on a gate driver of the non-display unit, a second hydrogen getter layer disposed on the second thin film transistor, and a passivation layer covering the organic light emitting device.

Hereinafter, an organic light emitting diode display according to embodiments of the present invention will be described with reference to the drawings.

1 is a block diagram schematically illustrating an organic light emitting display device. FIG. 2 is a plan view schematically illustrating a connection and arrangement relationship of components constituting an organic light emitting diode display.

However, in the case of FIGS. 1 and 2 , as an exemplary embodiment of the present invention, the connection and arrangement relationship of each component of the organic light emitting display device 100 according to the present invention is not limited thereto.

The organic light emitting diode display 100 may include a display panel 110 , a timing controller 140 , a data driver 120 , and a gate driver 130 .

The display panel 110 may include a display unit DA that displays an image including a pixel (P) array and a non-display unit NDA that does not display an image.

The non-display area NDA may be disposed to surround the periphery of the display area DA. Various wires such as the gate driver 130 , the data drive IC pad part DPA and the ground wire VSSL and the power supply wire may be disposed in the non-display part NDA, and the non-display part NDA corresponds to the bezel part can be

The display unit DA of the display panel 110 includes a plurality of gate lines GL arranged in one direction and a plurality of data lines arranged in one direction to cross the gate lines GL. : DL) may include a plurality of pixel regions. A plurality of pixel areas may be arranged in a matrix form, and a pixel P including a plurality of sub-pixels SP may be disposed in each pixel area. At least one thin film transistor connected to the gate line GL and the data line DL may be disposed in each subpixel SP.

The gate driver 130 controls on/off of the thin film transistors of the pixels in response to a gate control signal applied from the timing controller 140 , and a data voltage Vdata applied from the data driver 120 . This makes it possible to provide a suitable pixel circuit. To this end, the gate driver 130 sequentially outputs gate signals such as a scan signal or an emission signal, and sequentially supplies the gate signals to the gate lines GL. When the gate signal is supplied to the gate line GL, the data voltage may be applied to a sub-pixel of a pixel circuit connected to a specific gate line GL.

The gate driver 130 may include one or more gate driver integrated circuits (Gate Driver ICs), one or both sides of the display panel 110 depending on a driving method or a design method of the display panel 110 . can be located in A plurality of thin film transistors may be disposed in the gate driver 130 .

As shown in FIG. 2 , in the gate driver 130 , a gate driver integrated circuit may be directly formed on the display panel 110 using a gate-driver in panel (GIP) method. The gate driver 130 formed in a gate-driver-in-panel method may be disposed in the non-display area NDA, which is an outer portion of one or both sides of the display area DA.

When the specific gate line GL is opened, the data driver 120 converts the image data received from the timing controller 140 into an analog data voltage, and supplies the data voltage to the data line DL in synchronization with the gate control signal. do.

The data driver 120 may include at least one source driver integrated circuit 121 (Source Driver Integrated Circuit: Source Driver IC). Each of the source driver integrated circuits 121 is connected to a bonding pad of the display panel 110 by a tape automated bonding (TAB) method or a chip-on-glass (COG) method, or the display panel It may be disposed directly or integrated in 110 . In addition, each of the source driver integrated circuits 121 may be implemented in a Chip On Film (COF) method. For example, as shown in FIG. 2 , each source driver integrated circuit 121 is mounted on a flexible film 123 , and one end of the flexible film 123 is at least one control printed circuit board 150 , Control printed circuit board), and the other end is bonded to the data drive IC pad part DPA of the display panel 110 .

Accordingly, the flexible film 123 includes wires connecting the data drive IC pad part DPA of the display panel 110 and the source driver integrated circuit 121 , and the data drive IC pad part DPA and the control printed circuit board. Wires connecting the wires of 150 may be formed.

A plurality of circuits implemented with driving chips may be mounted on the control printed circuit board 150 , and for example, a timing controller 140 may be disposed as shown in FIG. 2 . In addition, a power controller for supplying various voltages or currents to the display panel 110 , the data driver 120 , the gate driver 130 , or controlling various voltages or currents to be supplied is further disposed on the control printed circuit board 150 . can

The timing controller 140 controls the data driver 120 and the gate driver 130 by providing the gate control signal to the gate driver 130 and providing the data control signal to the data driver 120 .

In addition, the timing controller 140 starts scanning according to the timing implemented in each frame, and converts input image data input from the outside to match the data signal format used by the data driver 120 to output the converted image data. and control the data operation at an appropriate time according to the scan.

The ground line VSSL extends along the edge of the display unit DA, is disposed on the non-display unit NDA, and both ends thereof may be connected to the data drive IC pad unit DPA. The ground line VSSL may be disposed adjacent to the gate driver 130 . The ground line VSSL may serve to protect the thin film transistors of the non-display unit NDA and the display unit DA from static electricity introduced from the outside.

3 is a schematic cross-sectional view illustrating one sub-pixel disposed in a display unit of an organic light emitting diode display according to an exemplary embodiment.

Referring to FIG. 3 , the organic light emitting diode display according to the present exemplary embodiment includes a first thin film transistor 210 , a first hydrogen getter layer 245 , an organic light emitting diode 250 , and a bank 270 formed on a substrate 201 . ) and a passivation layer 260 . The organic light emitting diode display according to the present exemplary embodiment may further include a color filter disposed on the passivation layer 260 to correspond to the organic light emitting diode 250 .

The substrate 201 includes the display unit DA on which the pixels P are disposed, the gate driver 130 , the data drive IC pad unit DPA, the ground line VSSL, and the like, described above with reference to FIGS. 1 and 2 . It is a base substrate of the display panel 110 on which the non-display area NDA on which various wirings are disposed is formed. The first substrate 201 may be a plastic substrate or a glass substrate.

On the substrate 201 , a first thin film transistor 210 , a first hydrogen getter layer 245 connected to the first thin film transistor 210 , and a first hydrogen getter layer 245 are connected to the first thin film transistor 210 . The connected organic light emitting device 250 is disposed.

A buffer layer may be formed on the substrate 201 before the first thin film transistor 210 is formed. The buffer layer serves to protect the first thin film transistor 210 and the organic light emitting diode 250 from moisture penetrating through the substrate 201 which is vulnerable to moisture permeation. The buffer layer may be formed of a single layer or multiple layers of an insulating material such as silicon oxide, silicon nitride, or silicon oxynitride (SiON).

The first thin film transistor 210 includes a first active layer 211 , a first gate electrode 212 , a first gate insulating layer 213 , and first source/drain electrodes 214 and 215 . In FIG. 3 , the first thin film transistor 210 exemplarily has a coplanar structure, but is not limited thereto. The first thin film transistor 210 may be formed in various shapes such as an inverted staggered structure.

The first thin film transistor 210 is an oxide thin film transistor, and the first active layer 211 includes indium gallium zinc oxide (IGZO), zinc tin oxide (ZTO), zinc indium oxide (ZIO), zinc gallium oxide (ZGO), etc. of an oxide semiconductor material. Both edges of the first active layer 211 may be doped with impurities.

A first gate insulating layer 213 may be formed on the first active layer 211 . 3 shows that the first gate insulating layer 213 is formed on a partial region of the first active layer 211 , however, the first gate insulating layer 213 is formed on the entire upper surface of the substrate 201 . can be The first gate insulating layer 213 may be formed of, for example, silicon oxide.

A first gate electrode 212 corresponding to at least a partial region of the first active layer 211 is formed on the first gate insulating layer 213 . The first gate electrode 212 includes molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), platinum (Pt), titanium (Ti), nickel (Ni), neodymium (Nd), palladium ( Pd), silver (Ag), tungsten (W), and copper (Cu) may be formed as a single layer or multiple layers made of any one or an alloy thereof.

An interlayer insulating layer 222 may be formed on the first gate electrode 212 . The interlayer insulating layer 222 may cover the first gate electrode 212 , the first active layer 211 , and the first gate insulating layer 213 .

The interlayer insulating layer 222 may be formed of an inorganic insulating material such as silicon oxide, silicon nitride, or silicon oxynitride (SiON), or an organic insulating material such as benzocyclobutene or photo-acryl. can

First source/drain electrodes 214 and 215 made of a conductive material such as metal are formed on the interlayer insulating layer 222 , and contact holes formed in the first gate insulating layer 213 and the interlayer insulating layer 222 . It may be electrically and physically connected to both ends of the first active layer 211 exposed by the . One of the first source/drain electrodes 214 and 215 may be a source electrode and the other may be a drain electrode. The first source/drain electrodes 214 and 215 may include molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), platinum (Pt), titanium (Ti), nickel (Ni), neodymium ( Nd), palladium (Pd), silver (Ag), tungsten (W), and copper (Cu) may be formed as a single layer or multiple layers made of an alloy thereof.

A protective layer 224 for insulating the first thin film transistor 210 may be formed on the first source/drain electrodes 214 and 215 and the interlayer insulating layer 222 . The protective layer 224 may be formed of an inorganic insulating material, for example, silicon oxide, silicon nitride, silicon oxynitride, or a multilayer thereof.

A first planarization layer 230 for flattening a step caused by the first thin film transistor 210 may be formed on the passivation layer 224 . The first planarization layer 230 is made of an organic insulating material such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin. can be formed.

A first hydrogen getter layer 245 may be formed on the first planarization layer 230 . The first hydrogen getter layer 245 may be electrically and physically connected to the first source/drain electrode 214 through the first contact hole 245h penetrating the passivation layer 224 and the first planarization layer 230 . can

The first hydrogen getter layer 245 absorbs hydrogen (H) remaining in the passivation layer 260 , thereby blocking diffusion of hydrogen into the first thin film transistor 210 . It is preferable that the first hydrogen getter layer 245 be thickly formed to faithfully perform a function of absorbing or blocking hydrogen. The thickness of the first hydrogen getter layer 245 may be greater than the thickness of the lower electrode 251 of the organic light emitting diode 250 . For example, the first hydrogen getter layer 245 may have a thickness of several tens of nm to several μm.

The first hydrogen getter layer 245 may be made of a material different from that of the lower electrode 251 . The first hydrogen getter layer 245 includes molybdenum (Mo), molybdenum-titanium alloy (MoTi), titanium (Ti), zirconium (Zr), thorium (Th), vanadium (V), palladium (Pd), nickel (Ni). ), tin (Sn), aluminum (Al), silver (Ag), copper (Cu), chromium (Cr), gold (Au), platinum (Pt), a single layer or multiple It can be formed in layers. The first hydrogen getter layer 245 may be formed of titanium (Ti), a titanium alloy, or a multilayer including titanium. The first hydrogen getter layer 245 may be formed of a multilayer in which copper (Cu) and a molybdenum-titanium (MoTi) alloy are stacked. Here, copper (Cu) may serve to prevent cracks in the molybdenum-titanium (MoTi) alloy.

When the first hydrogen getter layer 245 is thickly formed, cracks or particles may be formed. A second planarization layer 230 for flattening a step caused by the first hydrogen getter layer 245 may be formed on the first planarization layer 230 . The second planarization layer 235 is made of an organic insulating material such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin. can be formed.

An organic light emitting diode 250 and a bank 270 may be formed on the second planarization layer 235 . The organic light emitting device 250 may include a lower electrode 251 , an organic light emitting layer 253 , and an upper electrode 255 . The lower electrode 251 may be an anode electrode, and the upper electrode 255 may be a cathode electrode.

The lower electrode 251 may be formed on the second planarization layer 235 . The lower electrode 251 may be electrically and physically connected to the first hydrogen getter layer 245 through the second contact hole 251h passing through the second planarization layer 235 . The second contact hole 251h may be disposed to overlap at least a portion of the first contact hole 245h. By doing so, even if there is a crack in the first hydrogen getter layer 245 , electrical connection from the first source/drain electrode 214 to the lower electrode 251 can be ensured.

Since the lower electrode 251 , the first hydrogen getter layer 245 , and the first source/drain electrodes 214 are electrically connected, the lower electrode 251 and the first hydrogen electrode 251 are electrically connected to each other when the organic light emitting diode 250 is driven. The getter layer 245 and the first source/drain electrode 214 may have the same or similar potential. Therefore, even when the first hydrogen getter layer 245 is disposed below the lower electrode 251, the parasitic capacitance is minimized, so that delay or distortion of a signal due to the parasitic capacitance does not occur or can be minimized.

If the first hydrogen getter layer 245 is electrically insulated from the lower electrode 251 and the lower electrode 251 is directly connected to the first source/drain electrode 215 , that is, the first hydrogen getter layer When 245 is floating, parasitic capacitance is generated due to a gap between the lower electrode 251 and the first hydrogen getter layer 245 , which may cause delay and distortion of the signal. The delay and distortion of the signal may deteriorate display quality of the organic light emitting diode display. When the first hydrogen getter layer 245 is floating, the magnitude of the parasitic capacitance may also sometimes vary because the potential of the first hydrogen getter layer 245 cannot be controlled, and the degree of signal delay and distortion is reduced. Sometimes it can be different.

The area of the first hydrogen getter layer 245 may be the same as the area of the lower electrode 251 . The larger the area of the first hydrogen getter layer 245 is, the better in terms of hydrogen absorption, but when the area of the lower electrode 251 is too large, the distance between the first hydrogen getter layers 245 between adjacent sub-pixels decreases. It becomes too narrow, and for this reason, signal interference between adjacent sub-pixels may occur. Accordingly, the first hydrogen getter layer 245 is disposed directly under the lower electrode 251 and preferably has the same area as the lower electrode 251 . However, in contrast to this, the area of the first hydrogen getter layer 245 may be larger than the area of the lower electrode 251 in a range in which signal interference between adjacent sub-pixels is not significantly problematic. Alternatively, the area of the first hydrogen getter layer 245 may be smaller than the area of the lower electrode 251 .

The bank 270 may be formed at the boundary of the sub-pixel regions. The bank 270 may be formed to cover the edge of the lower electrode 251 on the second planarization layer 235 to partition the sub-pixel regions. A region in which the bank 270 is formed does not emit light, so it may be defined as a non-emission part, and a region in which the bank 270 is not formed may be defined as a light emitting part.

The bank 270 may be formed of an organic material such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin. .

An organic emission layer 253 may be formed on the lower electrode 251 and the bank 270 . Specifically, the organic emission layer 253 may cover the bank 270 and the lower electrode 251 not covered by the bank 270 .

The organic emission layer 253 may emit any one of red light, green light, blue light, and white light. The organic light emitting layer 253 may be, for example, a white light emitting layer emitting white light. In this case, the organic emission layer 253 may be formed in a tandem structure in which two or more stacks are stacked. Each of the stacks may include a hole transporting layer, at least one light emitting layer, and an electron transporting layer. Also, a charge generation layer may be formed between the stacks. The organic light emitting layer 253 may include, for example, a blue light emitting layer having a peak at a wavelength of 420 nm to 460 nm and a green or yellow green light emitting layer having a peak at a wavelength of 520 nm to 560 nm. The organic emission layer 253 may further include a red emission layer in contact with the green or yellow-green emission layer. The red light emitting layer may have a peak at a wavelength of 620 nm to 640 nm.

In this embodiment, the organic light emitting diode 250 may be implemented in a top emission method in which light is emitted in a direction opposite to the direction toward the substrate 201 , that is, in an upper direction. In this case, the lower electrode 251 may be a reflective electrode. The lower electrode 251 has, for example, a stacked structure of aluminum and titanium (Ti/Al/Ti), a stacked structure of aluminum and indium tin oxide (ITO) (ITO/Al/ITO), an APC alloy, and an APC alloy and It may be formed of a metal material having a high reflectance, such as a stacked structure of ITO (ITO/APC/ITO). The APC alloy is an alloy of silver (Ag), palladium (Pd), and copper (Cu).

An upper electrode 255 may be formed on the organic emission layer 253 . The upper electrode 255 may be a transparent electrode. The upper electrode 255 may be formed of, for example, a transparent conductive oxide such as indium tin oxide (ITO), antimony tin oxide (ATO), or indium zinc oxide (IZO). Also, the upper electrode 255 may be a transflective electrode. The upper electrode 255 may be formed of a thin metal film having light transmissivity. The metal layer may be formed of magnesium (Mg), an alloy of silver (Ag) and magnesium (Mg), or a multilayer thereof. In this case, the luminance of the organic light emitting diode 250 may be increased due to a strong cavity effect.

A passivation layer 260 may be formed on the upper electrode 255 to prevent oxygen or moisture from penetrating into the organic light emitting devices 250 from the outside. The passivation layer 260 may be formed as a multi-layer in which an inorganic layer and an organic layer are alternately stacked, but is not limited thereto.

For example, the passivation layer 260 may include a first inorganic layer 261 , an organic layer 263 , and a second inorganic layer 265 . In this case, the first inorganic layer 261 is formed to cover the upper electrode 255 . The organic layer 263 is formed to cover the first inorganic layer 261 . The organic layer 263 is preferably formed to have a sufficient thickness to prevent particles from penetrating the first inorganic layer 261 and being input to the organic light emitting layer 253 and the upper electrode 255 . The second inorganic layer 265 is formed to cover the organic layer 263 .

Each of the first and second inorganic layers 261 and 265 is made of an inorganic material such as silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxynitride, silicon oxide, aluminum oxide, or titanium oxide. can be formed. The organic layer 263 may be formed of an organic material such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin. . The first and second inorganic layers 261 and 265 may be formed of, for example, silicon nitride or silicon oxynitride by a plasma chemical vapor deposition process.

A color filter may be formed on the passivation layer 260 , and a protective film or a glass substrate covering the color filter may be further disposed.

In order to dispose the hydrogen getter layer on the upper electrode 255 side of the top emission type organic light emitting device 250 , the light emitted from the organic light emitting device 250 must be transmitted, so that the hydrogen getter layer has to be formed thinly. In this case, the function of the hydrogen getter layer to absorb or block hydrogen is inevitably insufficient. In the present embodiment, the first hydrogen getter layer 245 is thickly formed while disposing the first hydrogen getter layer 245 close to the first thin film transistor 210 under the lower electrode 251 of the organic light emitting diode 250 . Therefore, the first hydrogen getter layer 245 can efficiently protect the first thin film transistor 210 from hydrogen remaining in the passivation layer 260 by faithfully performing a function of absorbing or blocking hydrogen. Accordingly, the reliability of the organic light emitting diode display may be improved.

4 to 6 are schematic cross-sectional views illustrating a portion of a non-display portion of an organic light emitting diode display according to example embodiments.

4 to 6 are cross-sectional views of the gate driver 130 and the ground line VSSL disposed in the non-display area NDA of the display panel. Hereinafter, in the description of FIGS. 4 to 6 , descriptions of the same or corresponding components as those shown in FIG. 3 will be omitted.

Referring to FIG. 4 , a second thin film transistor 310 , a second hydrogen getter layer 345 , and a ground line VSSL may be disposed in the non-display area NDA. The second hydrogen getter layer 345 may be disposed on the second thin film transistor 310 to absorb or block hydrogen remaining in the passivation layer 260 .

The second thin film transistor 310 includes a second active layer 311 , a second gate electrode 312 , a second gate insulating layer 313 , and second source/drain electrodes 314 and 315 . One of the second source/drain electrodes 314 and 315 may be a source electrode and the other may be a drain electrode.

The second hydrogen getter layer 345 may be electrically and physically connected to the second source/drain electrode 314 through a through hole 345h penetrating the first planarization layer 230 and the passivation layer 224 . .

The second hydrogen getter layer 345 may be disposed on the same layer as the layer on which the first hydrogen getter layer 245 is disposed, and may be formed of the same material. The second hydrogen getter layer 345 may be formed simultaneously with the first hydrogen getter layer 245 and may have the same thickness.

The ground wiring VSSL may be formed on the same layer as the layer on which the second source/drain electrodes 314 and 315 are disposed, and may be formed of the same material.

Referring to FIG. 5 , unlike FIG. 4 , the second hydrogen getter layer 345 disposed on the second thin film transistor 310 to absorb or block hydrogen remaining in the passivation layer 260 is different from the first planarization layer ( 230 and the passivation layer 224 may be electrically and physically connected to the ground line VSSL through the through hole 345h penetrating the passivation layer 224 .

Referring to FIG. 6 , unlike FIG. 4 , the second hydrogen getter layer 345 disposed on the second thin film transistor 310 to absorb or block hydrogen remaining in the passivation layer 260 is different from the second source/drain. It may not be electrically or physically connected to the electrode 314 and the ground line VSSL. That is, the second hydrogen getter layer 345 may float.

7 to 10 are schematic plan views illustrating a portion of a non-display portion of an organic light emitting diode display according to example embodiments.

Referring to FIG. 7 , a plurality of second hydrogen getter layers 345 spaced apart from each other may be disposed on the gate driver 130 . The plurality of second hydrogen getter layers 345 may be disposed one by one in a one-to-one correspondence with the plurality of second thin film transistors 310 of the gate driver 130 . The second hydrogen getter layer 345 may be connected to the second source/drain electrodes of the second thin film transistors 310 .

Referring to FIG. 8 , the second hydrogen getter layer 345a may be disposed on the entire area of the gate driver 130 in the form of one plate. The second hydrogen getter layer 345a may cover all thin film transistors of the gate driver 130 . The second hydrogen getter layer 345a may be connected to a ground line VSSL disposed adjacent to the gate driver 130 .

Referring to FIG. 9 , a plurality of second hydrogen getter layers 345a ′ may be disposed on the entire area of the gate driver 130 in the form of a plate. One second hydrogen getter layer 345a ′ may cover the plurality of thin film transistors of the gate driver 130 . The plurality of second hydrogen getter layers 345a ′ may be connected to a ground line VSSL disposed adjacent to the gate driver 130 .

Referring to FIG. 10 , the second hydrogen getter layer 345b may be disposed on the entire area of the gate driver 130 in the form of one plate. The second hydrogen getter layer 345b may cover all thin film transistors of the gate driver 130 . The second hydrogen getter layer 345b may not be connected to the ground line VSSL disposed adjacent to the gate driver 130 . The second hydrogen getter layer 345b may be floating.

As described above, the present invention has been described with reference to the illustrated drawings, but the present invention is not limited by the embodiments and drawings disclosed in the present specification, and various methods can be obtained by those skilled in the art within the scope of the present invention. It is obvious that variations can be made. In addition, although the effects of the configuration of the present invention are not explicitly described and described while describing the embodiments of the present invention, it is natural that the effects predictable by the configuration should also be recognized.

100: organic light emitting display device 110: display panel
120: data driver 121: source driver integrated circuit
123: flexible film 130: gate driver
140: timing controller 150: control printed circuit board
201: first substrate 210, 310: thin film transistor
211: active layer 212: gate electrode
213: gate insulating layer 214: drain electrode
215: source electrode 222: interlayer insulating layer
224: protective layer 230: first planarization layer
235: second planarization layer 245, 345: hydrogen getter layer
250: organic light emitting device 251: lower electrode
253: organic light emitting layer 255: upper electrode
260: passivation layer
GL: gate wiring DL: data wiring
DA: display unit NDA: non-display unit
DPA: data drive IC pad part
VSSL: Ground Wire

Claims (20)

a display panel including a display unit displaying an image and a non-display unit surrounding the display unit;
a first thin film transistor disposed on a sub-pixel of the display unit;
a first hydrogen getter layer disposed on the first thin film transistor and connected to source/drain electrodes of the first thin film transistor; and
an organic light emitting device disposed on the first hydrogen getter layer and including a lower electrode connected to the first hydrogen getter layer, an organic light emitting layer, and an upper electrode; and
and a passivation layer covering the organic light emitting diode. According to claim 1,
A thickness of the first hydrogen getter layer is greater than a thickness of the lower electrode. According to claim 1,
The first hydrogen getter layer is formed of a material different from that of the lower electrode. According to claim 1,
The first hydrogen getter layer is formed of titanium, a titanium alloy, or a multilayer including titanium. 5. The method of claim 4,
The first hydrogen getter layer is an organic light emitting diode display including a multilayer in which copper (Cu) and a molybdenum-titanium (MoTi) alloy are stacked. According to claim 1,
An area of the first hydrogen getter layer is the same as an area of the lower electrode. According to claim 1,
a first planarization layer including a first contact hole through which the first hydrogen getter layer is connected to the source/drain electrodes; and
A second planarization layer including a second contact hole through which the lower electrode is connected to the first hydrogen getter layer;
The second contact hole is disposed to overlap at least a portion of the first contact hole. According to claim 1,
a gate driver positioned on at least one side of the display unit and including a second thin film transistor; and
and a second hydrogen getter layer disposed on the second thin film transistor. 9. The method of claim 8,
The second hydrogen getter layer and the first hydrogen getter layer are disposed on the same layer and formed of the same material. 9. The method of claim 8,
The second hydrogen getter layer is connected to the source/drain electrodes of the second thin film transistor. 9. The method of claim 8,
Further comprising a ground wire disposed on the non-display unit,
The second hydrogen getter layer is connected to the ground line. 9. The method of claim 8,
The second hydrogen getter layer is disposed on the entire area of the gate driver in the form of a single plate. 9. The method of claim 8,
and the second hydrogen getter layer includes a plurality of second hydrogen getter layers spaced apart from each other on the gate driver. a display panel including a display unit displaying an image and a non-display unit surrounding the display unit;
a first thin film transistor disposed on a sub-pixel of the display unit;
a first hydrogen getter layer disposed on the first thin film transistor and connected to source/drain electrodes of the first thin film transistor;
an organic light emitting device disposed on the first hydrogen getter layer and including a lower electrode connected to the first hydrogen getter layer, an organic light emitting layer, and an upper electrode;
a second thin film transistor disposed on a gate driver of the non-display unit;
a second hydrogen getter layer disposed on the second thin film transistor; and
and a passivation layer covering the organic light emitting diode. 15. The method of claim 14,
A thickness of the first hydrogen getter layer is greater than a thickness of the lower electrode. 15. The method of claim 14,
The first hydrogen getter layer is formed of a material different from that of the lower electrode. 15. The method of claim 14,
An area of the first hydrogen getter layer is the same as an area of the lower electrode. 15. The method of claim 14,
The second hydrogen getter layer and the first hydrogen getter layer are disposed on the same layer and formed of the same material. 15. The method of claim 14,
The second hydrogen getter layer is connected to the source/drain electrodes of the second thin film transistor. 15. The method of claim 14,
Further comprising a ground wire disposed on the non-display unit,
The second hydrogen getter layer is connected to the ground line.

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