KR20210080348A - 유기-무기 하이브리드 소재의 제조 방법 - Google Patents

유기-무기 하이브리드 소재의 제조 방법 Download PDF

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KR20210080348A
KR20210080348A KR1020217004547A KR20217004547A KR20210080348A KR 20210080348 A KR20210080348 A KR 20210080348A KR 1020217004547 A KR1020217004547 A KR 1020217004547A KR 20217004547 A KR20217004547 A KR 20217004547A KR 20210080348 A KR20210080348 A KR 20210080348A
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metal
reaction chamber
semimetal
purging
polymer substrate
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잇사스네 아즈피타르테
마토 크네즈
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아소시아시온 센트로 데 인베스티가시온 코페라티바 엔 나노시엔시아스 (쎄이쎄 나노구네)
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
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    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45529—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making a layer stack of alternating different compositions or gradient compositions
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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    • C23C16/45525—Atomic layer deposition [ALD]
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