KR20210067892A - Jig, processing system and processing method - Google Patents

Abstract

A jig is to improve the analysis accuracy of luminescence intensity. The jig includes a base; a plurality of light sources provided on the base and emitting light of different wavelengths; a control part provided on the base and turning on or off the plurality of light sources based on a given program; a power supply part provided on the base and supplying power to the plurality of light sources and the control part. The jig is provided in a transfer chamber and has a shape capable of being transported by a transport device for transporting a target substrate.

Description

JIG, PROCESSING SYSTEM AND PROCESSING METHOD

The present disclosure relates to a jig, a processing system, and a processing method.

Patent Document 1 discloses a plasma processing apparatus that connects a light emission spectroscopic analyzer to a chamber, and monitors and controls a process by analyzing the spectral intensity generated in the chamber. Patent Document 2 discloses a system in which an optical calibration device including a light source having a continuous spectrum, such as a xenon flash lamp, is installed in a chamber to calibrate the device.

Japanese Patent Laid-Open No. 2011-517097 Japanese Patent Laid-Open No. 2018-091836

The present disclosure provides techniques for improving the analysis accuracy of luminescence intensity.

According to an aspect of the present disclosure, a base, a plurality of light sources provided on the base and emitting light of different wavelengths, and a plurality of light sources provided on the base and turned on or off based on a given program a jig having a shape that is provided on the base and includes a power supply unit for supplying electric power to the plurality of light sources and the control unit, and which is provided in a transfer chamber and has a shape capable of being transported by a transport device for transporting a substrate to be processed; is provided

According to one aspect, it is possible to improve the analysis accuracy of the emission intensity.

BRIEF DESCRIPTION OF THE DRAWINGS It is a cross-sectional schematic diagram which shows an example of the jig which concerns on embodiment.
2 is a diagram illustrating an example of a plasma processing apparatus according to an embodiment.
3 is a diagram illustrating an example of a semiconductor manufacturing apparatus according to an embodiment.
4 is a diagram illustrating an example of a hardware configuration of a processing system including the semiconductor manufacturing apparatus according to the embodiment.
5 is a diagram illustrating an example of a hardware configuration of a processing system including the semiconductor manufacturing apparatus according to the embodiment.
6 is a diagram illustrating an example of an operation of the processing system according to the embodiment.
7 is a diagram illustrating an example of reference data according to an embodiment.
8 is a diagram illustrating an example of an operation of the emission spectroscopy apparatus according to the embodiment.
9 is a diagram illustrating an example of an operation of the processing system according to the embodiment.
10 is a diagram illustrating another example of analysis using the processing system according to the embodiment.
It is a cross-sectional schematic diagram which shows the other example of the jig which concerns on embodiment.

Hereinafter, forms for implementing the present disclosure will be described with reference to the drawings. In each drawing, the same code|symbol is attached|subjected to the same structural part, and overlapping description may be abbreviate|omitted.

[Jig]

First, a jig LW according to an embodiment will be described with reference to FIG. 1 . BRIEF DESCRIPTION OF THE DRAWINGS It is a cross-sectional schematic diagram which shows an example of the jig|tool LW which concerns on embodiment. The jig LW includes a base 11, a control board 12, a plurality of light sources 13a to 13d (the light sources are collectively referred to as "light source 13"), a battery 19, and a plurality of temperature sensors 14a. -14d) (collectively referred to as "temperature sensor 14").

The base 11 is a substrate for evaluation (eg, bareSi) using a disk-shaped wafer as an example, and is distinguished from a processing target substrate (product substrate). However, the base 11 is not limited to a disk shape, and there is no limitation in shape, such as polygonal, elliptical, etc., as long as it can be transported by a transport device that transports the target substrate. In this way, since the jig LW has a shape capable of being transported by a transport device provided in the transport chamber in a processing system to be described later, it can be transported between a given apparatus such as a plasma processing apparatus and the like and the transport chamber without breaking the vacuum. Examples of the material of the substrate include silicon, carbon fiber, quartz glass, silicon carbide, silicon nitride, alumina, and the like. The material of the substrate is preferably a material having conductivity and heat transfer properties.

The control board 12 is a circuit board provided on the base 11 , and includes light sources 13a to 13d , temperature sensors 14a to 14d , a connector 21 , and a control circuit 200 .

The light sources 13a - 13d are disposed on the control board 12 on the base 11 . The light sources 13a to 13d emit light of different wavelengths (ie, different colors), respectively. The four light sources 13a are light sources emitting light of the same wavelength and are arranged side by side. The four light sources 13b are light sources that emit light of the same wavelength and are arranged side by side. The four light sources 13c are light sources that emit light of the same wavelength and are arranged side by side. The four light sources 13d are light sources that emit light of the same wavelength and are arranged side by side.

By arranging four light sources 13 each emitting light of the same wavelength side by side, the amount of light of each wavelength is increased, whereby the emission spectroscopy device 100 installed in the window of the calibration target device or the reference device receives each wavelength through the window. of light can be easily received. However, the number of light sources 13 of each wavelength is not limited to four, and may be plural or more. The light source 13a, the light source 13b, the light source 13c, and the light source 13d are disposed to be spaced apart from each other. In addition, the number of light sources of the same wavelength of each light source 13a to 13d is not limited to a plurality, and may be one as long as the light quantity is sufficient. In this case, the light sources 13a to 13d may be arranged side by side.

The light sources 13a to 13d are preferably disposed along the outermost circumference of the base 11 . This makes it easier for the emission spectroscopy apparatus 100 to receive the light output from the light sources 13a to 13d. However, the arrangement of the plurality of light sources 13a to 13d is not particularly limited as long as they are on the control board 12 .

The light sources 13a to 13d are preferably a Light Emitting Diode (LED) or an Organic Light Emitting Diode (OLED) (see FIG. 4 ).

In the jig LW according to the embodiment, by using an LED or OLED as the light sources 13a to 13d, it is possible to avoid a decrease in the amount of light over time as it is used, so analysis by the emission spectroscopy apparatus 100 A decrease in accuracy can be avoided. In addition, by using LED or OLED, the jig LW can be miniaturized.

Further, the wavelength band of the plurality of light sources 13a to 13d is preferably in the range of 200 nm to 850 nm. The light output from the light sources 13a to 13d is not limited to visible light and may be ultraviolet or infrared. On the other hand, the light source 13 may be capable of outputting light of various wavelengths (colors) by, for example, combination with a white LED.

Each of the light sources 13a to 13d is rotated and transported to a position close to the window of the chamber 100 in which the emission spectroscopy apparatus 100 is installed. By doing in this way, it becomes easy for the emission spectroscopy apparatus 11 to receive each light. On the other hand, in the base 11, a notch 22 is formed in the edge part, and by this cutout, the alignment apparatus mentioned later is comprised so that rotation of the conveyed jig LW can be controlled.

The temperature sensors 14a-14d are arrange|positioned in the vicinity of each light source so that it may correspond one-to-one with respect to the light sources 13a-13d. The temperature sensor 14a measures the ambient temperature of the light source 13a. The temperature sensor 14b measures the ambient temperature of the light source 13b. The temperature sensor 14c measures the ambient temperature of the light source 13c. The temperature sensor 14d measures the ambient temperature of the light source 13d.

The control circuit 200 is disposed on the control board 12 on the base 11 and includes a microcontroller 15, a memory 16, a charging circuit 18, etc. (see Figs. 4 and 5), and a given program The light sources 13a to 13d are turned on or off based on the The control circuit 200 functions as a control unit for controlling each part of the jig LW. The control circuit 200 controls, for example, turning on and turning off each of the light sources 13a to 13d. The control circuit 200 may control communication with other devices.

The connector 21 is a connector for charging a battery by being connected to an external power source. Four batteries 19 are arranged on the base 11 . The battery 19 supplies power to the light sources 13a to 13d and the control circuit 200 . The battery 19 is an example of a power supply unit that supplies power to the plurality of light sources and the control unit. The number of batteries 19 is not limited to four as long as the number can withstand the maximum current value of the light sources 13a to 13d.

The jig LW is provided with an acceleration sensor 17 . The acceleration sensor 17 detects the inclination of the jig LW, the conveyance operation in the apparatus, and the like.

[Plasma processing unit]

The jig LW having such a configuration can be conveyed to a plasma processing apparatus that performs substrate processing such as etching processing, film forming processing, and the like. 2 is a diagram illustrating an example of the plasma processing apparatus 10 according to the embodiment. Plasma processing apparatus 10 provides one example of several plasma generation systems used to excite plasma from a processing gas.

The plasma processing apparatus 10 of FIG. 2 shows a capacitively coupled plasma (CCP) apparatus, in which plasma P is formed between the upper electrode 3 and the cradle ST in the chamber 2 . The cradle ST has a lower electrode 4 and an electrostatic chuck 5 . A substrate to be processed is held on the lower electrode 4 during the process. A window 101 through which light passes is provided in the chamber 2 , and the emission spectrometer 100 is connected to the window 101 through an optical fiber 102 . When the emission intensity of plasma is analyzed by the emission spectroscopy apparatus 100 , the processing target substrate is held on the lower electrode 4 . The RF source 6 and the RF source 7 are coupled to both the upper electrode 3 and the lower electrode 4, and different RF frequencies may be used. In another example, RF source 6 and RF source 7 may be coupled to the same electrode. A direct current (DC) power source may also be coupled to the upper electrode. A gas source 8 is connected to the chamber 2 to supply a process gas. Further, an exhaust device 9 is connected to the chamber 2 to exhaust the inside of the chamber 2 .

The plasma processing apparatus of FIG. 2 includes an EC (equipment controller, 180) including a processor and a memory, and controls each element of the plasma processing apparatus 10 to plasma-process a target substrate.

[Semiconductor manufacturing equipment]

Next, the semiconductor manufacturing apparatus 30 including the plasma processing apparatus 10 is demonstrated with reference to FIG. 3 . 3 is a diagram illustrating an example of the semiconductor manufacturing apparatus 30 according to the embodiment. The semiconductor manufacturing apparatus 30 has four plasma processing apparatuses 10 of the configuration of FIG. 2 , each of which is indicated as plasma processing apparatuses 10a to 10d.

The semiconductor manufacturing apparatus 30 includes chambers 2a to 2d (collectively referred to as "chamber 2") provided in plasma processing apparatuses 10a to 10d, respectively, a transfer chamber VTM, and two load lock chambers LLM. : Load Lock Module), Loader Module (LM: Loader Module), Alignment Device (ORT), 3 Load Ports (LP: Load Port), and MC (Machine Controller, 181) are provided.

Two chambers 2a to 2d are arranged side by side on opposite sides of the transfer chamber VTM to perform predetermined processing on the target substrate. The chambers 2a to 2d and the transfer chamber VTM are connected so as to be able to be opened and closed by the gate valve V. As shown in FIG. The inside of the chambers 2a-2d is pressure-reduced and it becomes a vacuum atmosphere.

Inside the transfer chamber VTM, a transfer apparatus VA that transfers a substrate to be processed is disposed. The transfer device VA holds the target substrate on a pick at the tip of the arm, and transfers the target substrate between the chambers 2a to 2d and the load lock chamber LLM. The transfer device VA can transfer the jig LW between the chambers 2a to 2d and the load lock chamber LLM while holding the jig LW on the tip pick.

The load lock chamber LLM is provided between the transfer chamber VTM and the loader module LM. The load lock chamber LLM switches the atmospheric atmosphere and the vacuum atmosphere, and transfers the processing target substrate between the atmospheric space of the loader module LM and the vacuum space of the transfer chamber VTM.

The inside of the loader module LM is maintained by downflow cleaning, and three load ports LP are provided on the sidewall thereof. Each load port LP is provided with, for example, a Front Opening Unified Pod (FOUP) or an empty FOUP in which 25 target substrates are accommodated. The target substrate is conveyed from the load port LP to the chambers 2a to 2d, and is conveyed from the chambers 2a to 2d to the load port LP after the processing of the target substrate.

Inside the loader module LM, a transport device LA for transporting a substrate to be processed is disposed. The transfer device LA holds the target substrate on a pick at the tip of the arm, and transfers the target substrate between the FOUP and the load lock chamber LLM. The transfer apparatus LA holds the jig LW on the pick at the tip of the arm, and can transfer the jig LW between the chambers 2a to 2d and the load lock chamber LLM.

The loader module LM is equipped with the alignment apparatus ORT which aligns the position of a to-be-processed board|substrate. Alignment apparatus ORT is arrange|positioned at the one end of loader module LM, for example. The alignment apparatus ORT detects the center position, the amount of eccentricity, and the notch position of the substrate to be processed. The arrangement correction of the target substrate based on the detection result is performed by the transfer apparatus LA arranged in the loader module LM. The alignment apparatus ORT detects the center position, the eccentricity amount, and the notch position of the jig LW. The arrangement correction of the jig LW based on the detection result is performed by the conveying apparatus LA arrange|positioned at the loader module LM.

In addition, the number of the chambers 2a-2d, the load lock chamber LLM, the loader module LM, and the load port LP is not limited to the number shown in embodiment, It may be several. In addition, the conveyance of the jig|tool LW can be performed similarly to the conveyance of a to-be-processed board|substrate. The jig LW is provided in the transfer chamber VTM and has a shape capable of being transported by the transport apparatuses LA and VA that transport the target substrate. Thereby, the jig LW can be conveyed between the plasma processing apparatus 10 which is an example of a given apparatus and the conveyance chamber VTM, without breaking a vacuum.

The MC 181 includes a central processing unit (CPU), a read only memory (ROM), a random access memory (RAM), and a hard disk drive (HDD). Meanwhile, the MC 181 may include another storage device such as a solid state drive (SSD).

The CPU controls the processing of the target substrate in the chambers 2a to 2d according to a recipe in which the order of the process, the conditions of the process, and the like are set. Recipes are stored in storage units such as ROM, RAM, and HDD. The storage unit stores a program to be executed for controlling the processing and conveyance of the target substrate. Further, in the storage unit, a program executed for controlling the conveyance process of the jig LW is stored. The CPU controls the conveyance of the jig LW according to a program in which the conveyance order or condition of the jig LW is set.

In each of the chambers 2a to 2d, the light emission spectroscopy apparatus 100a to 100d (hereinafter collectively referred to as "emission spectroscopy analysis") is provided in each chamber through a window 101 for transmitting light through an optical fiber 102. device 100") is installed. When the jig LW is mounted on the cradle ST and the light source 13 provided in the jig LW is turned on, the emission spectroscopy apparatus 100 receives the output light through the window 101 .

In the semiconductor manufacturing apparatus, the jig LW may be disposed in the alignment apparatus ORT in the FOUP. An alignment device may be disposed in a space of a transport system such as a transport chamber VTM or the like, and a jig LW may be disposed in the alignment device. If the light output from the light sources 13a to 13d of the jig LW is sufficient for the analysis of the emission spectroscopy apparatus 100, the light output from each light source 13a to 13d without rotating the jig LW based analysis can be performed. In this case, the alignment device ORT may not be installed.

As an example of the analysis in the emission spectroscopy apparatus 100 , there may be process monitoring such as EPD (End Point Detection). If the window becomes cloudy due to adhesion of reaction products generated during substrate processing, the sensitivity of the emission spectrometer 100 deteriorates. Also, the sensitivity of the emission spectrometer 100 changes depending on the state in which the optical fiber 102 connecting the chamber and the emission spectrometer 100 is wound.

According to the jig LW according to the embodiment, the light emission spectroscopy apparatus 100 can receive light in a state in which the light source 13 is inside the chamber 2 . In addition, the jig LW can be transferred into the chamber 2 while the chamber 2 is kept in a vacuum without opening the chamber 2 to the atmosphere by opening the lid of the chamber 2 . Accordingly, the light emission signal intensity can be stabilized by adjusting the sensitivity of the emission spectroscopy apparatus 100 to an optimal value.

In addition, in the embodiment, the window 101 has a honeycomb-shaped double-glazed window structure. Accordingly, it is possible to suppress the entry of plasma and radicals into the window 101 to minimize the amount of reaction products adhering to the window 101 , thereby suppressing a decrease in the light reception intensity of the emission spectroscopy apparatus 100 .

On the other hand, when a substrate to be processed is being processed in one of the plasma processing apparatuses 10a to 10d, the emission spectroscopy apparatus is installed by placing the jig LW on the cradle ST in the other chamber 2 . Light reception according to (100) can also be performed.

[processing system]

Next, the processing system 1a in the case of acquiring reference data of light emission intensity is demonstrated with reference to FIG. 4 : is a figure which shows an example of the hardware structure of each apparatus in the processing system 1a which includes the whole processing system 1a which concerns on embodiment, and the semiconductor manufacturing apparatus 30a. The processing system 1a includes a semiconductor manufacturing apparatus 30a and a jig LW. The semiconductor manufacturing apparatus 30a is equipped with the chamber 2a, the emission spectroscopy apparatus 100a, a PC (Personal Computer, 400), conveying apparatus VA1, LA1, and the alignment apparatus ORT1.

The emission spectroscopy apparatus 100a includes a measurement unit 103a, a CPU 104a, and a memory 105a. The measurement unit 103a measures light emission intensity data using the light output from the plurality of light sources 13 mounted on the jig LW. The memory 105a stores a program given for analyzing the emission intensity data using the light output from the plurality of light sources 13 of the jig LW. The CPU 104a executes the program stored in the memory 105a, so that the output from the plurality of light sources 13 of the jig LW transferred into the chamber 2a of the plasma processing apparatus 10 serving as a reference is output. Analyze the luminescence intensity data by measuring the light. The measured light emission intensity data is stored in the memory 105a as reference data.

The PC 400 controls the transfer of the jig LW between the chamber 2a of the plasma processing apparatus 10 serving as a reference and the transfer chamber VTM while maintaining the decompression environment of the chamber 2a (process chamber). The PC 400 conveys the jig LW to the alignment apparatus ORT1 and rotates the notch 22 in a designated direction as a reference. The PC 400 mounts the rotated jig LW on the cradle ST. The jig LW lights the plurality of light sources 13a at a position close to the window 101a of the chamber 2a. The measurement unit 103a receives the light of the first wavelength output from the plurality of light sources 13a through the window 101a. The CPU 104a analyzes the light emission intensity of the light of the received first wavelength.

Next, the PC 400 conveys the jig LW to the alignment apparatus ORT1 again, and rotates the notch 22 in a designated direction on the basis of the notch 22 . The PC 400 mounts the rotated jig LW on the cradle ST. The jig LW lights the plurality of light sources 13b at a position close to the window 101a of the chamber 2a. The measurement unit 103a receives the light of the second wavelength output from the plurality of light sources 13b through the window 101a. The CPU 104a analyzes the light emission intensity of the light of the received second wavelength.

Next, the PC 400 conveys the jig LW to the alignment apparatus ORT1 again, and rotates the notch 22 in a designated direction on the basis of the notch 22 . The PC 400 mounts the rotated jig LW on the cradle ST. The jig LW lights the plurality of light sources 13c at a position close to the window 101a of the chamber 2a. The measurement unit 103a receives the light of the third wavelength output from the plurality of light sources 13c through the window 101a. The CPU 104a analyzes the light emission intensity of the light of the received third wavelength.

Next, the PC 400 conveys the jig LW to the alignment apparatus ORT1 again, and rotates the notch 22 in a designated direction on the basis of the notch 22 . The PC 400 mounts the rotated jig LW on the cradle ST. The jig LW lights the plurality of light sources 13d at a position close to the window 101a of the chamber 2a. The measurement unit 103a receives the light of the fourth wavelength output from the plurality of light sources 13d through the window 101a. The CPU 104a analyzes the light emission intensity of the received fourth wavelength light.

On the other hand, the light of the first wavelength from the light source 13a, the light of the fourth wavelength from the light source 13d, the light of the third wavelength from the light source 13c, and the light of the second wavelength from the light source 13b When there is a relationship between the first wavelength, the fourth wavelength, the third wavelength, and the second wavelength, it is preferable to measure in the clockwise direction. For example, the measurement unit 103a may include a light source 13a that outputs light of a first wavelength? A light source 13d that outputs light of a fourth wavelength? It is preferable to measure the light of each wavelength in the order of the light source 13c which outputs the light of the 3rd wavelength - the light source 13b which outputs the light of 2 wavelength. By sequentially measuring the light from the adjacent light sources 13, the amount of rotation when rotating the jig LW in the alignment device ORT1 can be reduced.

The CPU 104a synthesizes light emission intensity data of light of the first to fourth wavelengths, and stores the synthesized light emission intensity data as reference data in the memory 105a.

Next, with reference to FIG. 5, the processing system 1b in the case of correct|amending measured data by comparing the measured data of luminescence intensity with reference data is demonstrated. 5 : is a figure which shows an example of the hardware structure of each apparatus in the processing system 1b which includes the whole processing system 1b which concerns on embodiment, and the semiconductor manufacturing apparatus 30b. The processing system 1b includes a semiconductor manufacturing apparatus 30b and a jig LW. The semiconductor manufacturing apparatus 30b is equipped with the chamber 2b, the emission spectroscopy apparatus 100b, MC181, conveying apparatus VA2, LA2, and the alignment apparatus ORT2.

The emission spectroscopy apparatus 100b includes a measurement unit 103b, a CPU 104b, and a memory 105b. The measuring unit 103b measures light emission intensity data using the light output from the plurality of light sources 13 mounted on the jig LW. The memory 105b stores a given program for analyzing the emission intensity data using the light output from the plurality of light sources 13 of the jig LW. The CPU 104b executes the program stored in the memory 105b, and outputs output from the plurality of light sources 13 of the jig LW transferred into the chamber 2b of the plasma processing apparatus 10 to be calibrated. Analyze the luminescence intensity data by measuring the emitted light. The CPU 104b compares the measured data of the measured light emission intensity with the reference data stored in the memory 105a. The CPU 104b corrects the measurement data based on the comparison result.

The MC 181 is configured such that the jig LW is transferred between the chamber 2b and the transfer chamber VTM of the plasma processing apparatus 10 to be calibrated while maintaining the reduced pressure environment of the chamber 2b (process chamber). , to control MC181 conveys jig LW to alignment apparatus ORT2, and rotates it in the direction designated on the basis of notch 22. The MC 181 mounts the rotated jig LW on the cradle ST. The jig LW lights the plurality of light sources 13a at a position close to the window 101b of the chamber 2b. The measurement unit 103b receives the light of the first wavelength output from the plurality of light sources 13a through the window 101b. The CPU 104b analyzes the light emission intensity of the light of the received first wavelength.

Next, the MC181 conveys the jig LW to the alignment device ORT2 again, and rotates the notch 22 in a designated direction on the basis of the notch 22 . The MC 181 mounts the rotated jig LW on the cradle ST. The jig LW lights the plurality of light sources 13b at a position close to the window 101b of the chamber 2b. The measurement unit 103b receives the light of the second wavelength output from the plurality of light sources 13b through the window 101b. The CPU 104b analyzes the light emission intensity of the received second wavelength light.

Next, the MC181 conveys the jig LW to the alignment apparatus ORT2 again, and rotates the notch 22 in a designated direction on the basis of the notch 22 . The MC 181 mounts the rotated jig LW on the cradle ST. The jig LW lights the plurality of light sources 13c at a position close to the window 101b of the chamber 2b. The measurement unit 103b receives the light of the third wavelength output from the plurality of light sources 13c through the window 101b. The CPU 104b analyzes the light emission intensity of the light of the received third wavelength.

Next, the MC181 conveys the jig LW to the alignment apparatus ORT2 again, and rotates the notch 22 in a designated direction on the basis of the notch 22 . The MC 181 mounts the rotated jig LW on the cradle ST. The jig LW turns on the plurality of light sources 13d at a position close to the window 101b of the chamber 2b. The measurement unit 103a receives the light of the fourth wavelength output from the plurality of light sources 13d through the window 101b. The CPU 104b analyzes the light emission intensity of the received fourth wavelength light.

The CPU 104b synthesizes the emission intensity data of the light of the first to fourth wavelengths, uses the synthesized emission intensity data as reference data, and compares it with reference data stored in the memory 105a.

The CPU 104b corrects the synthesized measurement data of the light emission intensity according to the comparison result. That is, the CPU 104b calculates a difference between the synthesized measurement data of the emission intensity and the reference data, and corrects the synthesized measurement data of the emission intensity so that the measurement data has the same waveform as the reference data.

The server acquires and accumulates corrected emission intensity data (hereinafter, referred to as "correction data") from the emission spectroscopy apparatus 100b. Thereby, the state of the plasma processing apparatus 10, a mechanical error, etc. can be analyzed based on the log data of the accumulated correction data. The server may be a host computer that is connected to the plurality of MCs 181 that control the plurality of semiconductor manufacturing apparatuses 30 and collects correction data from the plurality of MCs 181 .

[Operation of processing system]

Next, an example of the operation|movement of the processing system 1a in the case of obtaining the reference data which concerns on embodiment is demonstrated with reference to FIG. 6 is a diagram illustrating an example of operation of the processing system 1a according to the embodiment. The left side of Fig. 6 shows the processing of the jig LW. The center of FIG. 6 shows the processing of the PC 400 . The right side of FIG. 6 shows the processing of the emission spectroscopy apparatus 100a.

When this process is started, PC400 conveys jig|tool LW1 to alignment apparatus ORT1 using conveying apparatus VA1, LA1 (step S31, S41). Next, the PC 400 rotates the jig LW in the designated rotation direction in the alignment device ORT1 (steps S32 and S42). Next, the PC 400 transfers the jig LW to the chamber 2a of the plasma processing apparatus 10 serving as a reference using the transfer apparatuses VA1 and LA1 (steps S33 and S43 ).

Next, the PC 400 mounts the jig LW on the cradle ST in the chamber 2a by the pick operation of the conveying apparatus VA1 (step S44). At this timing, the PC 400 transmits a measurement start signal to the emission spectroscopy apparatus 100a (step S45). The emission spectroscopy apparatus 100a receives a measurement start signal (step S51).

At the timing at which the processing of step S44 is performed, the jig LW detects that it has been placed (step S34). The jig LW detects that the jig LW is mounted on the cradle ST using the temperature sensor 14 or the acceleration sensor 17 . The acceleration sensor 17 detects an inclination and a lifting operation of the jig LW. The temperature sensor detects the temperature of the cradle ST. The jig LW determines whether it is mounted on the cradle ST by detecting the inclination of the jig LW, the lifting operation, and/or the temperature. The jig LW turns on the light source 13a of the LED at the timing when it detects that it is mounted (step S35). The emission spectroscopy apparatus 100a starts receiving LED light (step S52).

The jig LW turns on the light source 13a and after a predetermined time has elapsed (step S36), turns off the LED light source 13a (step S37). The emission spectroscopy apparatus 100a turns on the light source 13a and, after a predetermined time has elapsed (step S53), stops receiving the LED light (step S54). The emission spectroscopy apparatus 100a stores the emission intensity data in the memory 105a as a result of emission spectroscopy in the target wavelength range (let's say, for example, the first wavelength) (step S56). As a result, the light emission intensity data of the first wavelength is stored in the memory 105a.

The emission spectroscopy apparatus 100a stops receiving the LED light in step S54, and then transmits a measurement stop signal to the PC 400 (step S55). Upon receiving the measurement stop signal (step S46), the PC 400 takes out the jig LW from the chamber 2a by the pick operation of the conveying apparatus VA1 (step S47). In this way, the jig LW is taken out from the chamber 2a (step S38).

The PC 400 repeats the processing in steps S41 to S47, the jig LW repeats the processing in steps S31 to S38, and the emission spectroscopy apparatus 100a repeats the processing in steps S51 to S56. Accordingly, the emission spectroscopic analysis apparatus 100a sequentially performs spectroscopic analysis by measuring the light output from the light source 13b → the light source 13c → the light source 13d. The emission spectroscopy apparatus 100a stores, in the memory 105a, emission intensity data of these wavelengths as a result of emission spectroscopy analysis of a target wavelength range (for example, a second wavelength, a third wavelength, and a fourth wavelength). (step S56). As a result, the memory 105a stores emission intensity data of the second wavelength, the third wavelength, and the fourth wavelength together with the emission intensity data of the first wavelength.

The PC 400 repeats the processing of steps S41 to S47 a predetermined number of times (four times in this specification), and then ends this processing. The jig LW repeats the processing of steps S31 to S38 a predetermined number of times (four times in this specification), and then ends this processing. The emission spectroscopy apparatus 100a repeats the processing of steps S51 to S56 a predetermined number of times (four times in this specification), and then synthesizes the stored emission intensity data (step S57).

Next, the emission spectroscopy apparatus 100a stores the synthesized measurement data of the emission intensity as reference data in the memory 105a (step S58), and ends this process.

7 is a diagram illustrating an example of reference data of light emission intensity according to the embodiment. 7 , emission intensity data having four peaks at different wavelengths is shown as an example of reference data A of emission intensity according to the embodiment.

On the other hand, the predetermined time in step S36 and the predetermined time in step S53 correspond. Instead of the processing of steps S36 and S53, the following processing may be performed. The PC 400 determines whether the jig LW is separated from the cradle ST by the pick operation of the conveying apparatus VA1. When it is determined that the jig LW is separated from the cradle ST, the PC 400 transmits a measurement stop signal to the jig LW and the emission spectroscopy apparatus 100a. The jig LW turns off the LED light source 13a according to the reception of the measurement stop signal. The emission spectroscopy apparatus 100a stops receiving the LED light according to the reception of the measurement stop signal. The jig LW may detect that the jig LW is spaced apart from the cradle ST by using the temperature sensor 14 or the acceleration sensor 17 .

In addition, the jig LW, the PC 400, and the emission spectroscopy apparatus 100a according to the embodiment may perform wireless communication to execute each process of FIG. 6 .

[Operation of Emission Spectroscopy Device]

Next, an example of the operation of the emission spectroscopy apparatus 100a according to the embodiment will be described with reference to FIG. 8 . 8 is a diagram illustrating an example of an operation of the emission spectroscopy apparatus 100a according to the embodiment.

When this process is started, the emission spectroscopy apparatus 100a receives the measurement start signal (refer to step S45 in Fig. 6) transmitted from the PC 400 (step S21). Then, the emission spectroscopy apparatus 100a starts a timer (step S22). Next, the emission spectroscopy apparatus 100a determines whether light emission has been detected through the window 101a of the chamber 2a (step S23). When it is determined that light emission is not detected, the emission spectroscopy apparatus 100a determines whether a set time has elapsed based on the time counted by the timer (step S24). If the emission spectroscopy apparatus 100a determines that the set time has not elapsed, it returns to step S23 and determines whether light emission has been detected. When the emission spectroscopy apparatus 100a detects light emission before the set time elapses, it analyzes light emission in the target wavelength range (step S25) and ends the process. On the other hand, when the set time elapses without detecting light emission, the emission spectroscopy apparatus 100a outputs an error (step S26) and ends the processing. On the other hand, the light emission intensity data of the analysis result is stored in the memory 105a as reference data (refer to step S56 in Fig. 6).

[Operation of processing system]

Next, an example of the operation of the processing system 1b in the case of correcting the measurement data by comparing the reference data and the measurement data according to the embodiment will be described with reference to FIG. 9 . 9 is a diagram illustrating an example of the operation of the processing system 1b according to the embodiment. The left side of Fig. 9 shows the processing of the jig LW. The center of FIG. 9 shows the processing of the MC 181 . The right side of FIG. 9 shows the processing of the emission spectroscopy apparatus 100b. Since the operation of the jig LW in FIG. 9 and the operation of the jig LW in FIG. 6 are the same, the same step numbers are assigned. Since the operation of the MC 181 in FIG. 9 and the operation of the PC 400 in FIG. 6 are the same, the same step numbers are assigned. The operation of the emission spectroscopy apparatus 100b in FIG. 9 and the operation of the emission spectrometry apparatus 100a in FIG. 6 are almost the same, and the same step numbers are assigned to the same processes. The first difference is that in the processing system 1b of FIG. 9, the emission spectroscopy apparatus 100b executes the processing of step S59, whereas in the processing system 1a of FIG. 6, the emission spectroscopy apparatus 100a performs the processing of step S58 to execute the processing of The second difference is that in steps S33 and S44, the chamber 2 to which the jig LW is transported is the chamber 2b of the plasma processing apparatus 10 to be calibrated in FIG. It is the point of the chamber 2a of the plasma processing apparatus 10 serving as a reference. About the same process except for the above differences, description is abbreviate|omitted substantially.

When the present processing is started, the MC 181 repeats the processing in steps S41 to S47, the jig LW repeats the processing in steps S31 to S38, and the emission spectrometer 100b repeats the processing in steps S51 to S56. Repeat. The emission spectroscopy apparatus 100b sequentially measures the light output from the light source 13a → the light source 13b → the light source 13c → the light source 13d, performs spectroscopic analysis in sequence, and stores the emission intensity data of the analysis result in memory. Save to (105b). As a result, the memory 105b stores measurement data of the emission intensity of the first wavelength, the second wavelength, the third wavelength, and the fourth wavelength in the chamber 2b of the plasma processing apparatus 10 to be calibrated.

The MC 181 repeats the processing of steps S41 to S47 a predetermined number of times (four times in this specification), and then ends this processing. The jig LW repeats the processing of steps S31 to S38 a predetermined number of times (four times in this specification), and then ends this processing. The emission spectroscopy apparatus 100b repeats the processes of steps S51 to S56 a predetermined number of times (four times in this specification), and then synthesizes the stored emission intensity data of the first to fourth wavelengths (step S57).

Next, the emission spectroscopy apparatus 100b compares the synthesized emission intensity data of the first to fourth wavelengths with the reference data as measurement data, and corrects the measurement data to match the reference data (step S59), Terminate processing. A dotted line in FIG. 7 is a diagram illustrating an example of the measurement data B according to the embodiment. The emission spectroscopy apparatus 100b calculates a difference between the reference data A and the measurement data B, and corrects the measurement data B so that the measurement data B has the same waveform as the reference data A. By correcting the peak position, luminescence intensity, etc. of the measurement data B in this way, the measurement data B can be corrected to the same waveform as the reference data A.

Meanwhile, the jig LW, the MC 181 , and the emission spectroscopy apparatus 100b according to the embodiment may perform wireless communication and each process of FIG. 9 may be executed.

[Operation of Emission Spectroscopy Device]

The operation of the emission spectroscopy apparatus 100a of FIG. 8 is executed in conjunction with the operation of the PC 400 of FIG. 6 . Similarly, the operation of the emission spectroscopy apparatus 100b is executed in conjunction with the operation of the MC 181 in FIG. 9 . Meanwhile, since the operation of the emission spectroscopy apparatus 100b is the same as that of the emission spectroscopy apparatus 100a shown in FIG. 8 , a description thereof will be omitted.

Since there are individual differences in the LED light source 13, it is necessary to measure the reference data in advance and store it in the memory 105a. The reference data can be created by the information processing device on the jig maker side in the jig manufacturing process, but is not limited thereto. The reference data may be created by an information processing device on the manufacturer side of the semiconductor manufacturing device 30a, or may be created by a user information processing device such as a delivery destination factory of the semiconductor manufacturing device 30a. In addition, as for the reference data, individual reference data may be created for each jig LW, and reference data common to a plurality of jigs LW may be created.

As described above, according to the processing system 1 according to the embodiment and the modified example, the emission spectroscopy apparatus 100 calculates a difference between the synthesized measurement data of luminescence intensity and the reference data, and displays the same waveform as the reference data. Correct the peak and luminescence intensity of the measured data. Thereby, process monitoring and control such as EPD can be performed in consideration of the mechanical error of the plasma processing apparatus 10 .

That is, by correcting the measurement data of the emission intensity with the same waveform as the reference data, the measurement data of the same emission intensity can be displayed even when the LED light is received from the chamber 2 at any timing when the light of the same wavelength is received. have. Accordingly, it is possible to monitor and control a process such as EPD in consideration of a mechanical error of the plasma processing apparatus 10 .

In addition, thereby, it is possible to detect a mechanical error of the plasma processing apparatus 10 based on the measurement data of the light emission intensity. That is, the mechanical error of the plasma processing apparatus 10 can be grasped from the difference between the measurement data of the emission intensity and the reference data, and process monitoring and the like can be performed while the mechanical error of the plasma processing apparatus 10 is known.

The measurement data correction described above may be performed at the time of shipment, may be performed at a timing when the window 101 becomes cloudy due to adhesion of reaction products or the like accompanying substrate processing, may be performed at regular intervals, or may be performed for each measurement data. have.

Meanwhile, the operation of each unit described above is not limited thereto. For example, the operation of the MC 181 may be performed by the EC 180 , or the MC 181 and the EC 180 may cooperate. The operation of the PC 400 may be performed by the MC 181 , the EC 180 , or the MC 181 and the EC 180 in conjunction.

The PC 400 and the emission spectroscopy apparatus 100a place the jig LW on a reference device, and control so as to measure the emission intensity data as reference data using the light output from the plurality of light sources 13 . This is an example of a first information processing device that The MC 181 and the emission spectroscopy apparatus 100b arrange the jig LW in the apparatus to be a calibration target, and control so as to measure emission intensity data using light output from a plurality of light sources. This is an example of a device. The second information processing device controls by acquiring reference data, collating the measured light emission intensity data with the reference data, and correcting the measured light emission intensity data (measured data) according to the verification result.

The first information processing apparatus and the second information processing apparatus may be the same information processing apparatus, or may be different information processing apparatuses. For example, the MC 181 and the emission spectroscopy apparatus 100b may realize the functions of the first information processing apparatus and the second information processing apparatus. Also, the EC 180 and the emission spectroscopy apparatus 100b may realize the functions of the first information processing apparatus and the second information processing apparatus. In addition, the EC 180 , the MC 181 , and the emission spectroscopy apparatus 100b may cooperate to realize the functions of the first information processing apparatus and the second information processing apparatus.

An instruction to transfer the jig LW into the chamber may be given at the timing of receiving a signal notifying that the substrate processing has been completed from the EC 180 controlling the plasma processing apparatus 10 .

The temperature sensors 14a to 14d provided in the jig LW are disposed adjacent to each of the light sources 13a to 13d, respectively. The temperature of the corresponding temperature sensor 14a-14d rises by light emission of each light source 13a-13d. When the measured temperature is equal to or greater than a predetermined threshold, it may be determined that a problem has occurred in at least one of the plurality of light sources, and light emission of the plurality of light sources may be stopped.

In addition, the analysis by the emission spectroscopy apparatus 100: 100a, 100b is not limited to EPD, and can also be used for device diagnosis. As an example of device diagnosis, for example, whether the plasma state is normal may be determined based on a difference between measurement data of emission intensity and reference data, measurement data of emission intensity after correction, and the like. For example, such apparatus diagnosis may be performed after the plasma processing apparatus 10 is maintained or after parts in the plasma processing apparatus 10 are replaced.

FIG. 10 is a diagram showing an example of device diagnosis using the processing system 1 according to the embodiment and modification. A jig LW mounted on the plasma processing apparatus 10 that has generated the helium gas plasma is used, and the light source 13 is turned on. Then, the emission spectroscopy apparatus 100 performed spectroscopic analysis of the helium gas plasma to obtain emission intensity data shown in Fig. 10A. In Fig. 10(b), which shows the enlarged emission intensity of the wavelength in the range of about 250 nm to 330 nm, the solid line is the reference data, and the dotted line is the measurement data after correction. According to this, a peak of He (helium) having a wavelength of 295 nm appears in both the reference data and the measurement data. However, a fine peak of OH at a wavelength of 309 nm is shown in the measurement data compared to the reference data. From such a result, it can be interpreted that such a fine peak of OH in the processing system 1 arises from the unstable factor in the chamber 2a. In this way, from the difference between the reference data and the measurement data, it becomes possible to find a fine peak that does not appear in the ideal light source to which the plasma approximates, and analysis becomes possible. As described above, the analysis is possible according to the point where an important peak exists in the analysis of mechanical errors between the plurality of plasma processing apparatuses 10 and the luminescence intensity data after correction. can be corrected

As described above, according to the jig LW of the embodiment, the accuracy of the emission intensity analysis can be improved. In addition, by correcting the measurement data of the emission intensity with the same waveform as the reference data, process monitoring and control such as EPD can be performed in consideration of the mechanical error of the plasma processing apparatus 10 . In addition, thereby, a mechanical error of the plasma processing apparatus 10 can be detected based on the measurement data of the luminescence intensity, and process monitoring and the like can be performed while the mechanical error of the plasma processing apparatus 10 is known.

[Other example of jig (LW)]

Another example of the jig LW according to the embodiment will be described with reference to FIG. 11 . 11 : is a cross-sectional schematic diagram which shows the other example of the jig|tool LW which concerns on embodiment. What is different from the jig LW shown in FIG. 1 is the number and arrangement of the light sources 13, and since other structures are the same, description of other structures is omitted.

The light sources 13a to 13l of the jig LW shown in FIG. 11 are disposed on the control board 12 on the base 11 . The light sources 13a to 13l emit light of different wavelengths (ie, different colors), respectively. The light source 13a is composed of three LEDs emitting light of the same wavelength and is arranged side by side. Similarly, each of the light sources 13b to 13l is composed of three LEDs emitting light of the same wavelength and is arranged side by side. The light sources 13a to 13l may be OLEDs instead of LEDs.

By arranging three light sources 13a to 13l emitting light of the same wavelength side by side, respectively, the amount of light of each wavelength is increased, whereby the emission spectroscopy apparatus 100 installed in the window of the calibration target device, the reference device, etc. Through this, it is possible to easily receive light of each wavelength. The light source 13a, the light source 13b, and the light source 13c are arranged to be spaced apart from each other. In addition, the light source 13d, the light source 13e, and the light source 13f are arranged to be spaced apart from each other by the battery 19 as a boundary. In addition, the light source 13g, the light source 13h, and the light source 13i are arranged to be spaced apart from each other with the battery 19 as a boundary. In addition, the light source 13j, the light source 13k, and the light source 13l are arranged to be spaced apart from each other by the battery 19 as a boundary. As a result, 36 (=12×3) light sources 13 that output 12 different wavelengths of light are arranged as three light sources each outputting the same wavelength of light.

The light sources 13a to 13l are preferably disposed along the outermost circumference of the base 11 . This makes it easier for the emission spectroscopy apparatus 100 to receive the light output from the light sources 13a to 13l. However, the arrangement of the plurality of light sources 13a to 13l is not particularly limited as long as they are on the control board 12 .

In addition, about the measurement procedure of the three light sources 13a of the same wavelength, it is preferable to measure in the order of the center light source, one of the light sources at both ends, and the other of the light sources at both ends. However, it is also possible to measure by turning on the light in the order of the light source of one end, the light source of the other end, and the light source of the center, or it can be measured by turning on the light in the order of the light source of one end, the light source of the center, and the light source of the other end. The same applies to the measurement procedure of the three light sources 13b to 13i having the same wavelength.

It should be understood that the jig, the processing system, and the processing method according to the embodiments disclosed herein are illustrative in all respects and not restrictive. The above embodiments can be modified and improved in various forms without departing from the appended claims and the gist thereof. The matters described in the plurality of embodiments may have different configurations within the non-contradictory range, and may be combined within the non-contradictory range.

Plasma processing apparatus of the present disclosure is an Atomic Layer Deposition (ALD) apparatus, Capacitively Coupled Plasma (CCP), Inductively Coupled Plasma (ICP), Radial Line Slot Antenna (RLSA), Electron Cyclotron Resonance Plasma (ECR), Helicon Wave Plasma ( HWP) is applicable to any type of device.

This application claims priority based on Patent Application No. 2019-217362 for which it applied to the Japan Patent Office on November 29, 2019 and Patent Application No. 2020-169174 for which it applied on October 6, 2020, see the entire content as used here.

Claims (20)

base and
a plurality of light sources provided on the base and emitting light of different wavelengths;
a control unit provided on the base to turn on or turn off the plurality of light sources based on a given program;
It is provided on the base and includes a power supply unit for supplying power to the plurality of light sources and the control unit,
A jig provided in a transfer chamber and having a shape capable of being transported by a transport device that transports a substrate to be processed. According to claim 1,
A jig in which the base is a wafer. 3. The method of claim 1 or 2,
A jig that is conveyed while maintaining a reduced pressure environment between a given processing chamber and a transfer chamber. 4. The method according to any one of claims 1 to 3,
The plurality of light sources is a jig that is disposed along the outermost perimeter of the base. 5. The method according to any one of claims 1 to 4,
A jig in which a plurality of light sources emitting light of the same wavelength among the plurality of light sources are arranged side by side. 6. The method according to any one of claims 1 to 5,
A jig that is spaced apart between the light sources emitting light of different wavelengths among the plurality of light sources. 7. The method according to any one of claims 1 to 6,
The wavelength band of the plurality of light sources is 200nm ~ 850nm jig. 8. The method according to any one of claims 1 to 7,
The plurality of light sources are LED or OLED jig. 9. The method according to any one of claims 1 to 8,
A jig further comprising a sensor. 10. The method according to any one of claims 1 to 9,
A jig comprising a notch or an orientation flat for orienting the jig. A base, a plurality of light sources provided on the base and emitting light of different wavelengths, a control unit provided on the base and turning on or off the plurality of light sources based on a given program, and provided on the base and a jig including a power supply unit for supplying power to the plurality of light sources and the control unit is placed in a processing chamber of a reference device, and light emission intensity data is measured as reference data using the light output from the plurality of light sources a first information processing device that controls to
and a second information processing device that controls the jig to be placed in a processing chamber of a device to be calibrated and to measure emission intensity data using the light output from the plurality of light sources,
and the second information processing device controls to acquire the reference data, compare the measured luminescence intensity data with the reference data, and correct the measured luminescence intensity data according to a result of the matching. 12. The method of claim 11,
and the first information processing apparatus controls the jig to be conveyed between a processing chamber and a conveyance chamber of the apparatus serving as the reference while maintaining a reduced pressure environment. 13. The method of claim 11 or 12,
and the second information processing apparatus controls the jig to be conveyed between a processing chamber and a transfer chamber of the apparatus to be calibrated while maintaining a reduced pressure environment. 14. The method according to any one of claims 11 to 13,
and the first information processing device and the second information processing device are different information processing devices. 15. The method according to any one of claims 11 to 14,
and the first information processing apparatus and the second information processing apparatus are the same information processing apparatus. A base, a plurality of light sources provided on the base and emitting light of different wavelengths, a control unit provided on the base and turning on or off the plurality of light sources based on a given program, and provided on the base and placing a jig including a power supply unit for supplying power to the plurality of light sources and the control unit in a processing chamber of a device to be calibrated, and measuring luminescence intensity data using the light output from the plurality of light sources and,
The measured luminescence intensity data and the reference data are stored with reference to a storage unit in which the jig is placed in the processing chamber of the apparatus as a reference, and the luminescence intensity data measured using the light output from the plurality of light sources is stored as reference data. a processing method comprising a step of collating and correcting the measured luminescence intensity data according to a comparison result. 17. The method of claim 16,
While rotating the jig at a given angle using an alignment device, switching from a light source emitting light of a certain wavelength to a light source emitting light of a different wavelength from among the plurality of light sources, the light emission intensity data of each of the plurality of light sources A processing method that measures sequentially. 18. The method of claim 16 or 17,
measuring the temperature in the vicinity of the plurality of light sources using a temperature sensor provided in the vicinity of the plurality of light sources;
and stopping light emission of the plurality of light sources when the measured temperature is equal to or greater than a predetermined threshold. 19. The method according to any one of claims 16 to 18,
and conveying the jig between a processing chamber and a transfer chamber of the apparatus to be calibrated while maintaining a reduced pressure environment. 20. The method according to any one of claims 16 to 19,
and conveying the jig between a processing chamber and a transfer chamber of the apparatus serving as the reference while maintaining a reduced pressure environment.

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