KR20210059131A - Laser crystalling apparatus - Google Patents

Abstract

A laser crystallization apparatus according to an embodiment comprises: a laser generator for outputting a first laser beam and a second laser beam; a homogenizer for receiving the first laser beam and the second laser beam output from the laser generator and equalizing the same; an optical system that receives the first laser beam and the second laser beam that have passed through the homogenizer and converts them into light; and a substrate receiving unit accommodating a substrate to which the light-converted first laser beam and the second laser beam are irradiated, wherein the first laser beam and the second laser beam have a major axis and a minor axis, and the first laser beam and the second laser beam may be input to the homogenizer to have different incident angles in the major axis direction.

Description

Laser crystallization device {LASER CRYSTALLING APPARATUS}

The present disclosure relates to a laser crystallization apparatus, and more particularly, to a laser crystallization apparatus for crystallizing an amorphous silicon thin film into a polycrystalline silicon thin film.

In general, amorphous silicon (a-Si) has a disadvantage in that the mobility and aperture ratio of electrons, which are charge carriers, are low, and are not compatible with the CMOS process. On the other hand, polycrystalline silicon (Poly-Si) makes it possible to construct on a substrate a driving circuit necessary for writing an image signal to a pixel, which was not possible in an amorphous silicon thin film transistor (a-Si TFT). Accordingly, in a polysilicon thin film device, since connection between a plurality of terminals and a driver IC is unnecessary, productivity and reliability can be increased, and the thickness of the panel can be reduced.

Methods of manufacturing such a polysilicon thin film transistor under low temperature conditions include solid phase crystallization (SPC), metal induced crystallization (MILC), and metal induced lateral crystallization (MILC). , Excimer Laser Annealing (ELA), and the like. In particular, in a manufacturing process of an organic light emitting display device (OLED) or a liquid crystal display device (LCD), an excimer laser heat treatment method (ELA), which crystallizes using a laser beam having high energy, is used.

In this way, when a target substrate is scanned using a laser crystallization device and crystallization is performed on the target thin film, if there is a defect in the lens passing before the linear laser beam is applied to the substrate, the lens defect area and the Unevenness of the laser beam between other areas may cause scan mura stains and the like.

Embodiments are to provide a laser crystallization apparatus capable of reducing the influence of the defect due to the lens of the laser crystallization apparatus.

The laser crystallization apparatus according to the embodiment includes a laser generating unit that outputs a first laser beam and a second laser beam, a homogeneous unit receiving and homogenizing the first and second laser beams output from the laser generating unit, An optical system for light conversion by receiving the first laser beam and the second laser beam passing through the homogeneous portion, and a substrate receiving unit for receiving a substrate to which the light-converted first and second laser beams are irradiated And the first laser beam and the second laser beam have a major axis and a minor axis, and the first laser beam and the second laser beam are input to the homogeneous unit so as to have different incident angles in the major axis direction. .

A first position at which the first laser beam passing through the first portion of the optical system is irradiated onto the substrate and a second position at which the second laser beam passing through the first portion of the optical system is irradiated onto the substrate are mutually can be different.

The first laser beam and the second laser beam may be scanned in a direction parallel to the short axis, and the homogeneous portion and the optical system may not vibrate along the long axis.

The laser generator comprises a first light emitting unit that outputs a laser beam, a first collimator that receives the laser beam and outputs a light beam in a form of parallel light, and splits the laser beam diffused from the first collimator. A splitter may be included, and the laser beam may be split into the first laser beam and the second laser beam so as to have different incidence angles through the splitter.

The laser generator is a first light emitting unit that outputs the first laser beam, a first collimating unit to which the first laser beam is input and diffused, a second light emitting unit to output the second laser beam, and the second laser beam It includes a second collimating unit that is input and diffused, and an output direction of the first laser beam output from the first light-emitting unit and an output direction of the second laser beam output from the second light-emitting unit may be different from each other. .

The laser generating unit is a first light emitting unit that outputs the first laser beam, a first collimating unit to which the first laser beam is input and diffused, and the laser generating unit is a second light emitting unit to output the second laser beam, the The first laser beam output from the first light emitting unit, including a second collimating unit to which a second laser beam is input and diffused, and a mirror for changing a direction of the second laser beam diffused from the second collimating unit The output direction of and the output direction of the second laser beam output from the second light emitting unit may be the same.

The first laser beam and the second laser beam generated by the laser generator may be input to the same position of the homogeneous part in the long axis direction.

The first laser beam and the second laser beam generated by the laser generator may be input to different positions of the homogeneous part in the long axis direction.

According to embodiments, it is possible to prevent spots due to non-uniformity of the laser beam by reducing the influence of the defect of the lens of the laser crystallization apparatus.

1 is a view for conceptually explaining an arrangement of a laser crystallization apparatus and a substrate according to an embodiment.
2 is a simplified diagram showing a laser crystallization apparatus according to an embodiment.
3 is a view for explaining the intensity of a laser beam passing through the laser crystallization apparatus according to the embodiment.
4 is a view for explaining the influence of the intensity of a laser beam passing through a conventional laser crystallization apparatus.
5 is a view for explaining the intensity of a laser beam passing through the laser crystallization apparatus according to the embodiment.
6 is a conceptual diagram illustrating a laser beam generator of a laser crystallization apparatus according to an embodiment.
7 is a conceptual diagram illustrating a laser beam generator of a laser crystallization apparatus according to another exemplary embodiment.
8 is a conceptual diagram illustrating a laser beam generator of a laser crystallization apparatus according to another exemplary embodiment.
9 is a conceptual diagram illustrating a laser beam generator of a laser crystallization apparatus according to another exemplary embodiment.
10 is a conceptual diagram illustrating a laser beam generator of a laser crystallization apparatus according to another embodiment.
11 is a conceptual diagram illustrating a laser beam generator of a laser crystallization apparatus according to another exemplary embodiment.

Hereinafter, various embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those of ordinary skill in the art may easily implement the present invention. The present invention may be implemented in various different forms and is not limited to the embodiments described herein.

In order to clearly describe the present invention, parts irrelevant to the description have been omitted, and the same reference numerals are attached to the same or similar components throughout the specification.

In addition, the size and thickness of each component shown in the drawings are arbitrarily shown for convenience of description, so the present invention is not necessarily limited to the illustrated bar. In the drawings, the thicknesses are enlarged in order to clearly express various layers and regions. In addition, in the drawings, for convenience of description, the thicknesses of some layers and regions are exaggerated.

In addition, when a part such as a layer, film, region, plate, etc. is said to be "on" or "on" another part, this includes not only "directly over" another part, but also a case where another part is in the middle. . Conversely, when one part is "directly above" another part, it means that there is no other part in the middle. In addition, to be "on" or "on" the reference part means that it is located above or below the reference part, and does not necessarily mean that it is located "above" or "on" in the direction opposite to the gravitational force. .

In addition, throughout the specification, when a certain part "includes" a certain component, it means that other components may be further included rather than excluding other components unless otherwise stated.

In addition, throughout the specification, when referred to as "on a plane", it means when the object portion is viewed from above, and when referred to as "on a cross-section", it means when the object portion is viewed from the side when a vertically cut cross-section is viewed from the side.

Referring to FIG. 1, the arrangement of the laser crystallization apparatus and the substrate to which the laser beam is irradiated will be conceptually described. 1 is a view for conceptually explaining an arrangement of a laser crystallization apparatus and a substrate according to an embodiment.

Referring to FIG. 1, a laser crystallization apparatus 20 facing the surface of a substrate 10 mounted on a substrate receiving portion 1 is disposed, and a laser beam ( 30) is investigated. The surface of the substrate 10 has a first direction (x) and a second direction (y) perpendicular to the first direction. The laser beam 30 irradiated onto the substrate 10 is a linear shape having a short axis extending in a first direction (x) and a long axis extending in a second direction (y), and the laser crystallization apparatus 20 is a first direction (x). ), the laser beam 30 is irradiated onto the substrate 10 while moving at a constant speed along the short axis direction.

Then, a laser crystallization apparatus according to an embodiment will be described with reference to FIG. 2. 2 is a simplified diagram showing a laser crystallization apparatus according to an embodiment.

Referring to FIG. 2, the laser crystallization apparatus according to the embodiment includes a laser generating unit 110, a homogenizer 120, and a homogenizing unit 120 receiving and homogenizing a laser beam output from the laser generating unit 110. ), and an optical system 130 for irradiating the substrate 10 by altering the light that has passed through it. Although not shown, it includes a substrate receiving portion for accommodating the substrate 10.

The laser generator 110 outputs a pulsed laser beam, and outputs a laser beam of a specific wavelength in the form of a shot having a specific frequency. The laser generator 110 may output an excimer laser having a frequency of several hundred hertz (Hz) or a solid state laser having a frequency of several tens of kilohertz (kHz).

The homogenizer 120 makes the spatial distribution of the incident laser beam uniform.

The optical system 130 transforms the laser beam that has passed through the homogeneous portion 120 and outputs it to the substrate 10 in the form of a linear laser beam. The optical system 130 may include a plurality of large-area lenses.

The linear laser beam irradiated onto the substrate 10 has a long axis parallel to a second direction y that is perpendicular to a first direction x, which is a scanning direction in which the laser beam is scanned on the substrate.

As shown in FIG. 2, the laser generator 110 of the laser crystallization apparatus according to the embodiment includes two or more laser beams having different incident angles based on the second direction y, which is the major axis direction of the output laser beam. The laser beams 1000I and 2000I are output and input to the homogenizer 120. The laser beams 1000I and 2000I generated by the laser generating unit 110 and input to the homogeneous unit 120 include a first laser beam 1000I and a second laser beam 2000I. The first laser beam 1000I is incident in a first incident direction perpendicular to the second direction (y), and the second laser beam 2000I is incident in a second incident direction forming a first angle θ1 with the first incident direction. Is incident in the direction.

The first laser beam 1000I and the second laser beam 2000I are respectively incident on the homogeneous portion 120 and are uniform in their spatial distribution, and then incident on the optical system 130 to form a third linear laser beam. The laser beam 1000o and the fourth laser beam 2000o are output to the substrate 10.

The first laser beam 1000I and the second laser beam 2000I are input to have different incidence angles, thereby allowing them to pass through different positions of the optical system 130 and to pass through the optical system 130. The 3 laser beam 1000o and the fourth laser beam 2000o are output to different positions on the surface of the substrate 10.

In the illustrated embodiment, the first laser beam 1000I and the second laser beam 2000I are shown to be input to the same position of the homogeneous portion 120 so as to have different incidence angles, but the present invention is not limited thereto. The first laser beam 1000I and the second laser beam 2000I not only have different incident angles, but may be input through different positions. In addition, in the illustrated embodiment, although it is illustrated as including two laser beams having different incidence angles, the present invention is not limited thereto, and two or more laser beams having different incidence angles may be included.

Then, the laser beam generated by the laser crystallization apparatus according to the embodiment will be described in more detail with reference to FIGS. 3 to 5. 3 is a view for explaining the intensity of the laser beam passing through the laser crystallization apparatus according to an embodiment, FIG. 4 is a view for explaining the effect of the intensity of the laser beam passing through the conventional laser crystallization apparatus, FIG. 5 Is a view for explaining the intensity of the laser beam passing through the laser crystallization apparatus according to the embodiment.

First, referring to FIG. 3, it is assumed that there is a defect portion D such as formed on a surface of a part of the optical system 130 or including particles having a specific color therein. As described above with reference to FIG. 2, the laser crystallization apparatus according to the embodiment includes a first direction having a different incident angle based on a second direction y, which is a major axis direction of a laser beam output to the surface of the substrate 10. The laser beam 1000I and the second laser beam 2000I are output and input to the homogeneous unit 120, uniformized through the homogeneous unit 120, and then incident on the optical system 130. At this time, the third laser beam 1000o and the fourth laser beam 2000o passing through the defect portion D of the optical system 130 are radiated to different positions. The intensity of the third laser beam 1000o along the second direction y is shown as the first waveform 1000P, the intensity of the fourth laser beam 2000o is shown as the second waveform 2000P, and the third The intensity according to the overlapping of the laser beam 1000o and the fourth laser beam 2000o is conceptually expressed as a third waveform 3000P. As described above, when there is a defect portion (D) in the optical system 130, the intensity of the laser beam passing through the defect portion (D) decreases. Accordingly, according to the first waveform 1000P, the intensity of the third laser beam 1000o decreases at the first position 10a, and according to the second waveform 2000P, the fourth laser beam 2000o is At 2 position 20a its strength decreases. In addition, the first position 10a and the second position 20a may be adjacent to each other, but their positions are different from each other.

If the incident angle of the first laser beam 1000I and the second laser beam 2000I is the same laser beam, the third laser beam 1000o and the fourth laser beam passing through the defect D in the optical system 130 The position at which the intensity of (2000o) decreases becomes the same. Accordingly, as shown in FIG. 4, a spot S formed long along the scanning direction occurs at a position of the substrate 10 corresponding to the defect portion D of the optical system 130.

However, according to the laser crystallization apparatus according to the embodiment, the first laser beam 1000I having different incidence angles and the first laser beam 1000I having different incidence angles based on the second direction y that is the long axis direction of the laser beam output to the surface of the substrate 10 Since the second laser beam 2000I is output and supplied to the optical system 130, the third laser beam 1000o and the fourth laser beam passing through the optical system 130 by the defect portion D of the optical system 130 The position at which the intensity of (2000o) decreases is different. More specifically, as in the third waveform 3000P of FIG. 3, by overlapping the third laser beam 1000o and the fourth laser beam 2000o, the intensity of the laser beam output to the substrate 10 decreases. The positions are distributed to the third region 10b and the fourth region 20b, and the width of decrease in the intensity of the laser beam output to the substrate 10 is also reduced.

As described above, according to the laser crystallization apparatus according to the embodiment, the first laser beam 1000I having different incidence angles and the first laser beam 1000I having different incidence angles based on the second direction y that is the long axis direction of the laser beam output to the surface of the substrate 10 Since the second laser beam 2000I is output and supplied to the optical system 130, the third laser beam 1000o and the fourth laser beam passing through the optical system 130 by the defect portion D of the optical system 130 The positions at which the intensity of (2000o) decreases are different from each other, and the size at which the intensity of the laser beam is decreased by the defect portion D of the optical system 130 is also reduced. Accordingly, it is possible to prevent the occurrence of scan spots or the like that may be caused by the defective portion D of the optical system 130.

The homogeneous portion 120 and the optical system 130 of the laser crystallization apparatus according to the embodiment do not vibrate based on the second direction y, which is the long axis direction of the laser beam output to the surface of the substrate 10.

In order to supply a uniform laser beam by vibrating the homogeneous portion 120 or the optical system 130 of the laser crystallization apparatus, it must vibrate according to the frequency of the laser beam input to the laser crystallization apparatus. Therefore, when the frequency of the laser beam input to the laser crystallization apparatus increases, it is difficult to vibrate the homogeneous portion 120 or the optical system 130 of the laser crystallization apparatus according to the frequency of the laser beam.

The laser crystallization apparatus according to the embodiment includes a first laser beam 1000I and a second laser beam having different incident angles based on a second direction y, which is a major axis direction of a laser beam output to the surface of the substrate 10. By outputting (2000I) and inputting it to the homogeneous section 120, the homogenizing section 120 and the optical system 130 are not vibrated based on the second direction y, which is the major axis direction of the laser beam, and are not vibrated on the substrate 10. A uniform laser beam may be supplied depending on the location.

As described above with reference to FIG. 2, the laser crystallization apparatus according to the embodiment includes a first direction having a different incident angle based on a second direction y, which is a major axis direction of a laser beam output to the surface of the substrate 10. The laser beam 1000I and the second laser beam 2000I are output and input to the homogeneous unit 120, uniformized through the homogeneous unit 120, and then linearized through the optical system 130. In this case, the third laser beam 1000o and the fourth laser beam 2000o passing through the optical system 130 may generate interference fringes due to optical interference. As shown in FIG. 5, the intensity of the third laser beam 1000o along the second direction y is shown as a first waveform 1000P, and the intensity of the fourth laser beam 2000o is shown as the second waveform ( 2000P), and the intensity according to the overlapping of the third laser beam 1000o and the fourth laser beam 2000o is conceptually expressed as a third waveform 3000P. Referring to FIG. 5, the intensity change due to interference of the first waveform 1000P with respect to the third laser beam 1000o has a first amplitude (a), and the second waveform with respect to the fourth laser beam 2000o ( 2000P) has a second amplitude (b). As described above, the third laser beam 1000o and the fourth laser beam 2000o passing through the optical system 130 after being incident at different incidence angles are radiated to different positions, and the third waveform ( 3000P), since the third laser beam 1000o and the fourth laser beam 2000o overlap each other and are output to the substrate 10, the intensity change due to the interference of the third waveform 3000P is the third amplitude ( With c), the third amplitude (c) becomes smaller than the first amplitude (a) and the second amplitude (b).

As described above, according to the laser crystallization apparatus according to the embodiment, the first laser beam 1000I having different incidence angles and the first laser beam 1000I having different incidence angles based on the second direction y that is the long axis direction of the laser beam output to the surface of the substrate 10 Since the second laser beam 2000I is output and supplied to the optical system 130, the third laser beam 1000o and the fourth laser beam 2000o that have passed through the optical system 130 are overlapped with each other to be applied to the substrate 10. The output, the amplitude of the change in the intensity of the laser beam due to the interference becomes small, the influence of the change in the intensity of the laser beam due to the interference is reduced, so that the laser beam of uniform intensity can be supplied according to the position.

As described above, according to the laser crystallization apparatus according to the embodiment, the first laser beam having different incident angles ( 1000I) and a second laser beam 2000I.

Then, the laser beam supply of the laser crystallization apparatus according to the embodiment will be described with reference to FIGS. 6 to 11. 6 is a conceptual diagram showing a laser beam generator of a laser crystallization apparatus according to an embodiment, FIG. 7 is a conceptual diagram showing a laser beam generator of a laser crystallization apparatus according to another embodiment, and FIG. FIG. 9 is a conceptual diagram illustrating a laser beam generation unit of a laser crystallization apparatus according to another exemplary embodiment, FIG. 9 is a conceptual diagram showing a laser beam generation unit of a laser crystallization apparatus according to another exemplary embodiment, and FIG. 10 is a laser diagram of a laser crystallization apparatus according to another exemplary embodiment. A conceptual diagram illustrating a beam generator, and FIG. 11 is a conceptual diagram illustrating a laser beam generator of a laser crystallization apparatus according to another exemplary embodiment.

Referring to FIG. 6, the laser generating unit 110 of the laser crystallization apparatus according to an embodiment is arranged in a line on the light emitting unit 11 and the light emitting unit 11 to generate a parallel light beam emitted from the light emitting unit 11. It includes a collimator 12, a divider 13 and a mirror 14 that are output in a form. After the laser beam emitted from the light emitting unit 11 is output from the collimating unit 12 and output in the first direction through the splitter 13, the first laser beam 1000I is output in a direction different from the first direction. It is divided into a second laser beam 2000I reflected from the first mirror 14 and output in a second direction. For example, the first laser beam 1000I is incident in a first incident direction perpendicular to the second direction (y), and the second laser beam 2000I has a first incident direction and a first angle θ1. It may be incident in the formed second incident direction. According to the embodiment shown in FIG. 6, the first laser beam 1000I and the second laser beam 2000I are respectively incident on the homogeneous portion 120 and are incident on the same position of the homogeneous portion 120.

Referring to FIG. 7, the laser generation unit 110 of the laser crystallization apparatus according to another embodiment is arranged in a line on the light emitting unit 11 and the light emitting unit 11 to parallel the laser beam emitted from the light emitting unit 11. It includes a collimating unit 12, a divider 13, and a mirror 14 for outputting in the form of light. Unlike the embodiment shown in FIG. 6, the laser generation unit 110 of the laser crystallization apparatus according to the present embodiment includes a first laser beam 1000I incident on the homogeneous unit 120 so as to have different incidence angles. A second laser beam 2000I is generated, and the first laser beam 1000I and the second laser beam 2000I are incident at different positions of the homogeneous portion 120.

The first light emitting unit 11a and the first collimating unit 12a of the laser generating unit 110 of the laser crystallization apparatus according to the exemplary embodiment illustrated in FIGS. 6 and 7 emit laser beams in parallel directions.

Next, referring to FIG. 8, the laser generation unit 110 of the laser crystallization apparatus according to an exemplary embodiment is arranged in a line on the first light-emitting part 11a and the first light-emitting part 11a to form a first light-emitting part 11a. ), the first collimating part 12a, the second light-emitting part 11b, and the second light-emitting part 11b, which output the laser beam emitted in the form of parallel light, are arranged in a row to emit light from the second light-emitting part 11b. It includes a second collimating unit 12b that outputs the laser beam in the form of parallel light. The laser beam emitted from the first light emitting unit 11a forms a first laser beam 1000I output from the first collimating unit 12a and input in the first direction, and the laser emitted from the second light emitting unit 11b The beam is output from the second collimator 12b to form a second laser beam 2000I that is input to have an incident angle different from the first direction. For example, the first laser beam 1000I is incident in a first incident direction perpendicular to the second direction (y), and the second laser beam 2000I has a first incident direction and a first angle θ1. It may be incident in the formed second incident direction. According to the embodiment shown in FIG. 8, the first laser beam 1000I and the second laser beam 2000I are respectively incident on the homogeneous portion 120 and are incident on the same position of the homogeneous portion 120.

The first light emitting portion 11a and the first collimating portion 12a emit laser beams in different directions.

Referring to FIG. 9, the laser generation unit 110 of the laser crystallization apparatus according to another embodiment is, like the laser generation unit 110 of the laser crystallization apparatus according to the embodiment shown in FIG. 8, a first light-emitting unit. (11a), a first collimating part 12a, a second light-emitting part 11b, which are arranged in a line on the first light-emitting part 11a to output the laser beam emitted from the first light-emitting part 11a in the form of parallel light, It includes a second collimating portion 12b arranged in a line on the second light emitting portion 11b to output the laser beam emitted from the second light emitting portion 11b in the form of parallel light. However, unlike the laser generation unit 110 of the laser crystallization apparatus according to the embodiment shown in FIG. 8, the laser generation unit 110 of the laser crystallization apparatus according to the present embodiment The laser generating unit 110 generates a first laser beam 1000I and a second laser beam 2000I respectively incident on the homogeneous unit 120 so as to have different incidence angles, and the first laser beam 1000I and The second laser beam 2000I is incident on a different position of the homogeneous portion 120.

Next, referring to FIG. 10, the laser generator 110 of the laser crystallization apparatus according to an exemplary embodiment is arranged in a line on the first light emitting part 11a and the first light emitting part 11a to form a first light emitting part 11a. The first collimating part 12a, the second light-emitting part 11b, and the second light-emitting part 11b are arranged in a row to diffuse the laser beam emitted from the second light-emitting part 11b to diffuse the laser beam emitted from the second light-emitting part 11b. It includes a second collimating unit 12b, a first mirror 15a and a second mirror 15b reflecting light output to the second collimating unit 12b. The laser beam emitted from the first light emitting part 11a is output in the form of parallel light from the first collimating part 12a to form a first laser beam 1000I input in the first direction, and the second light emitting part 11b The laser beam emitted from the second collimator 12b is output in the form of parallel light, is reflected by the first mirror 15a and the second mirror 15b, and is input to have a different incident angle from the first direction. It forms a beam 2000I. For example, the first laser beam 1000I is incident in a first incident direction perpendicular to the second direction (y), and the second laser beam 2000I has a first incident direction and a first angle θ1. It may be incident in the formed second incident direction. According to the embodiment shown in FIG. 10, the first laser beam 1000I and the second laser beam 2000I are respectively incident on the homogeneous portion 120 and are incident on the same position of the homogeneous portion 120. In addition, the first light emitting portion 11a and the first collimating portion 12a emit laser light in the same direction, but the first laser beam 1000I and the second laser beam 2000I have different incident angles. .

Referring to FIG. 11, the laser generation unit 110 of the laser crystallization apparatus according to another embodiment includes a first light emitting unit, like the laser generation unit 110 of the laser crystallization apparatus according to the embodiment shown in FIG. 10. (11a), a first collimating part 12a, a second light-emitting part 11b, which are arranged in a line on the first light-emitting part 11a to output the laser beam emitted from the first light-emitting part 11a in the form of parallel light, The second collimating unit 12b and the light output to the second collimating unit 12b are arranged in a row on the second light-emitting unit 11b to output the laser beam emitted from the second light-emitting unit 11b in the form of parallel light. It includes a first mirror 15a and a second mirror 15b to reflect. However, unlike the laser generation unit 110 of the laser crystallization apparatus according to the embodiment shown in FIG. 10, the laser generation unit 110 of the laser crystallization apparatus according to the present embodiment has a homogeneous unit ( A first laser beam 1000I and a second laser beam 2000I respectively incident on 120) are generated, and the first laser beam 1000I and the second laser beam 2000I are moved to different positions of the homogeneous part 120. It is entered.

According to the embodiments shown in FIGS. 6 to 11, the laser generator 110 of the laser crystallization apparatus generates the first laser beam 1000I and the second laser beam 2000I so as to have different incident angles. However, the present invention is not limited thereto, and two or more beams having different incident angles may be generated. In addition, two or more light emitting units may be included.

As described above, in the laser crystallization apparatus according to the embodiments, the first laser beam 1000I and the first laser beam 1000I having different incidence angles based on the second direction y, which is the major axis direction of the laser beam output on the surface of the substrate 10 2 By outputting the laser beam 2000I and supplying it to the optical system 130, it is possible to prevent the occurrence of scan spots that may be caused by the defect portion D of the optical system 130, and the homogeneous portion 120 and the optical system ( A uniform laser beam may be supplied to the substrate 10 according to the position while 130 does not vibrate based on the second direction y, which is the major axis direction of the laser beam.

Although the embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements by those skilled in the art using the basic concept of the present invention defined in the following claims are also provided. It belongs to the scope of rights.

10: substrate 1000I, 2000I, 1000o, 2000o: laser beam
110: laser generating unit 120: homogeneous unit
130: optical systems 11, 11a, 11b: light emitting portion
12, 12a, 12b: collimator 13: divider
14, 15a, 15b: mirror D: defective part

Claims (13)

A laser generator for outputting a first laser beam and a second laser beam,
A homogeneous unit that receives the first laser beam and the second laser beam output from the laser generation unit and uniformizes it,
An optical system that receives the first laser beam and the second laser beam passing through the homogeneous portion and converts light into light,
And a substrate receiving unit for receiving a substrate to which the light-converted first laser beam and the second laser beam are irradiated,
The first laser beam and the second laser beam have a major axis and a minor axis, and the first laser beam and the second laser beam have different incident angles in the major axis direction. .
In claim 1,
A first position at which the first laser beam passing through the first portion of the optical system is irradiated onto the substrate and a second position at which the second laser beam passing through the first portion of the optical system is irradiated onto the substrate are mutually Another laser crystallization device.
In paragraph 2,
The first laser beam and the second laser beam are scanned in a direction parallel to the minor axis, and the homogeneous portion and the optical system do not vibrate along the major axis.
In paragraph 3,
The laser generator includes a first light emitting unit for outputting a laser beam, a first collimating unit to which the laser beam is input, and a splitter for dividing the laser beam output from the first collimating unit, and the laser beam is the splitter. The laser crystallization apparatus is divided into the first laser beam and the second laser beam so as to have different incidence angles through.
In claim 4,
The divided first laser beam and the second laser beam are input to the same position of the homogeneous portion in the longitudinal direction of the laser crystallization apparatus.
In claim 4,
The divided first laser beam and the second laser beam are input to different positions of the homogeneous portion in the longitudinal direction of the laser crystallization apparatus.
In paragraph 3,
The laser generator is a first light emitting unit that outputs the first laser beam, a first collimating unit to which the first laser beam is input, a second light emitting unit to output the second laser beam, and the second laser beam is input Including a second collimating part which
A laser crystallization apparatus in which an output direction of the first laser beam output from the first light-emitting unit and an output direction of the second laser beam output from the second light-emitting unit are different from each other.
In clause 7,
The first laser beam and the second laser beam generated by the laser generating unit are input to the same position of the homogeneous unit in the long axis direction.
In clause 7,
The first laser beam and the second laser beam generated by the laser generating unit are input to different positions of the homogeneous unit in the long axis direction.
In paragraph 3,
The laser generator comprises a first light emitting unit that outputs the first laser beam, a first collimator to which the first laser beam is input,
The laser generator includes a second light emitting unit that outputs the second laser beam, a second collimating unit to which the second laser beam is input, and a mirror for changing the direction of the second laser beam output from the second collimating unit. Including,
A laser crystallization apparatus in which an output direction of the first laser beam output from the first light-emitting unit and an output direction of the second laser beam output from the second light-emitting unit are the same.
In claim 10,
The first laser beam and the second laser beam generated by the laser generating unit are input to the same position of the homogeneous unit in the long axis direction.
In claim 10,
The first laser beam and the second laser beam generated by the laser generating unit are input to different positions of the homogeneous unit in the long axis direction.
In claim 1,
The first laser beam and the second laser beam are scanned in a direction parallel to the minor axis, and the homogeneous portion and the optical system do not vibrate along the major axis.

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