KR20210050244A - Method for removing particulates and plasma apparatus using the same - Google Patents

Abstract

The present application relates to a particle removal method and a plasma apparatus using the same. A particle removal method according to an embodiment of the present invention comprises the steps of: performing, by a plasma apparatus, an etching or deposition process on a wafer placed on a lower electrode by generating plasma in a reaction chamber; when the etching or deposition process is completed, applying a voltage pulse to a particle removal member positioned to be spaced apart from the lower electrode by a set interval while gradually erasing an electromagnetic wave output applied to generate the plasma by the plasma apparatus; and removing particles trapped in a sheath region of the plasma by attracting the same in the direction of the particle removal member by using electrical attraction by the voltage pulse.

Description

Method for removing particulates and plasma apparatus using the same

The present application relates to a method for removing particulates capable of preventing contamination on a wafer by removing particulates generated in plasma, and a plasma apparatus using the same.

As the line width of the semiconductor device becomes smaller and more highly integrated, the critical size of particulate matter that affects the operation of the circuit by contamination continues to decrease. Particularly, small particles of submicron or less cannot be removed by means of maintaining external cleanliness or cleaning the container (chamber), and most of them occur during the process and disappear at the end of the process.

In general, particulate contamination generated during the plasma process can be largely divided into two types. One of them is a by-product of the previous process attached to the container wall or a component that is separated from the container wall and the electrode due to corrosion or erosion of various parts, and the other is vapor-grown inside the plasma to form a substrate. It is a contaminating ingredient. Here, it is known that the former is a heterogeneous particle that has a plate shape of several tens of microns or more, and that the latter is a homogeneous particle that has a spherical shape of a sub-micron size. have.

The heterogeneous particles are mainly grown in the form of a thin film on the wall or electrode surface of the container, and then desorbed by charge accumulation.These components are used in periodic wet cleaning of the container or dry by O2 plasma. A significant portion can be removed through methods such as dry cleaning.

On the other hand, the homogeneous components are gaseous particulates, which grow in the gas phase in the plasma, and when they reach a certain size and density, they affect the contamination of the substrate and the process itself, but disappear into the pumping port at the end of the process. Is difficult.

Therefore, substrate contamination and process effects due to these gaseous particulates occur only during the process and disappear after the end of the process, so it cannot be removed by applying the existing cleaning method. There is a problem that it cannot be reduced.

An object of the present application is to provide a method for removing particulates that can prevent contamination of a wafer due to particulates generated during a plasma process, and a plasma apparatus using the same.

The present application is to provide a particle removal method capable of removing particulates generated during a plasma process using a ring-shaped particulate removal member, and a plasma apparatus using the same.

A method of removing particulates from a plasma device according to an embodiment of the present invention includes the steps of: generating plasma in a reaction chamber by the plasma device and performing an etching or deposition process on a wafer placed on a lower electrode; When the etching or deposition process is completed, applying a voltage pulse to a particulate removal member positioned at a predetermined distance from the lower electrode while gradually erasing the electromagnetic wave output applied to generate the plasma by the plasma device; And removing particulates trapped in the sheath region of the plasma by attracting and removing particulates in the direction of the particulate removal member by using an electric attraction caused by the voltage pulse.

Here, the plasma device is a capacitively coupled plasma (CCP) device, further comprising an upper electrode positioned opposite the lower electrode, and at least one electromagnetic wave output is applied to each of the upper electrode and the lower electrode. It can be.

In this case, the applying of the voltage pulse may include canceling the electromagnetic wave output applied to the lower electrode; If there are a plurality of electromagnetic wave outputs applied to the upper electrode, sequentially erasing the electromagnetic wave having a large output; And finally lowering the remaining electromagnetic wave output of the upper electrode to a non-zero minimum output level, and then removing the electromagnetic wave output to zero and applying a voltage pulse to the particulate removal member.

In addition, the plasma device may be an inductively coupled plasma (ICP) device that applies at least one electromagnetic wave output to the lower electrode.

In this case, the applying of the voltage pulse may include sequentially erasing an electromagnetic wave having a larger output when there are a plurality of electromagnetic wave outputs applied to the lower electrode; And finally lowering the remaining electromagnetic wave output of the lower electrode to a non-zero minimum output level, and then removing the electromagnetic wave output to zero and applying a voltage pulse to the particulate removal member.

The particulate removal method according to an embodiment of the present invention may further include cooling the particulate matter removal member so that the particulate matter moves in the direction of the particulate removal member by a thermophoretic force.

In the method of removing particulates according to an embodiment of the present invention, when the plasma is not generated, operating a vacuum pump for discharging the air inside the reaction chamber and applying mechanical vibration to the particulate removal member. It may further include.

Here, the particulate removal member is formed of a ring-shaped conductive material, has a larger diameter than the lower electrode, and may be positioned at a height higher or equal to the lower electrode.

A plasma apparatus according to an embodiment of the present invention relates to a plasma apparatus including a particulate removal function, comprising: a reaction chamber; A gas injection unit for injecting an etching gas or a deposition gas into the reaction chamber; A vacuum pump for discharging the air inside the reaction chamber to the outside; A lower electrode located in the reaction chamber and on which a wafer is placed; A particulate removal member positioned to be spaced apart from the lower electrode by a set distance; A power supply for applying an electromagnetic wave output for converting the etching gas or deposition gas into a plasma state; A pulse applying unit for applying a voltage pulse to the particulate removal member; And a control unit controlling the power supply unit and the pulse applying unit to apply the voltage pulse to the particle removing member while gradually erasing the electromagnetic wave output when the etching or deposition process for the wafer is completed.

In addition, the solution to the above-described problem does not enumerate all the features of the present invention. Various features of the present invention and advantages and effects thereof may be understood in more detail with reference to the following specific embodiments.

In the method of removing particulates and a plasma apparatus using the same according to an embodiment of the present invention, since particulates generated during a plasma process can be removed, contamination of a wafer due to particulates can be prevented.

The particulate removal method and the plasma apparatus using the same according to an embodiment of the present invention can quickly remove particulates generated in the plasma space, and thus, it is possible to eliminate the cause of defects in the device.

However, the effect that can be achieved by the method for removing particulates and the plasma apparatus using the same according to the embodiments of the present invention is not limited to those mentioned above, and other effects not mentioned are to which the present invention belongs from the following description. It will be clearly understood by those of ordinary skill in the art.

1 is a schematic diagram showing a plasma device according to an embodiment of the present invention.
Fig. 2 is a schematic diagram showing an ion attraction force and an electrostatic force applied to fine particles in a plasma.
3 is a schematic diagram showing a particulate removal member according to an embodiment of the present invention.
4 is a schematic diagram showing a capacitively coupled plasma device according to an embodiment of the present invention.
5 is a schematic diagram showing an inductively coupled plasma device according to an embodiment of the present invention.
6 is a flow chart showing a method of removing particulates in a plasma device according to an embodiment of the present invention.

Hereinafter, exemplary embodiments disclosed in the present specification will be described in detail with reference to the accompanying drawings, but identical or similar elements are denoted by the same reference numerals regardless of reference numerals, and redundant descriptions thereof will be omitted. The suffixes "module" and "unit" for constituent elements used in the following description are given or used interchangeably in consideration of only the ease of preparation of the specification, and do not have meanings or roles that are distinguished from each other by themselves.

In addition, in describing the embodiments disclosed in the present specification, when it is determined that a detailed description of related known technologies may obscure the subject matter of the embodiments disclosed in the present specification, the detailed description thereof will be omitted. In addition, the accompanying drawings are for easy understanding of the embodiments disclosed in the present specification, and the technical idea disclosed in the present specification is not limited by the accompanying drawings, and all changes included in the spirit and scope of the present invention It should be understood to include equivalents or substitutes.

1 is a schematic diagram showing a plasma device according to an embodiment of the present invention.

Referring to FIG. 1, the plasma apparatus may include a reaction chamber 11, an upper electrode 12, a lower electrode 13, a particle removing member 14, and the like.

Hereinafter, a plasma device according to an embodiment of the present invention will be described with reference to FIG. 1.

The reaction chamber 11 is a sealed container, and a plasma is formed therein to perform a deposition or etching process on the wafer w. Etching gas or deposition gas may be introduced into the reaction chamber 11 in a vacuum state, and an electromagnetic wave output may be applied to the etching gas or deposition gas to transform the etching gas and deposition gas into a plasma state.

The upper electrode 12 and the lower electrode 13 may be connected by a power supply unit (not shown), and both may be connected to the power supply unit or either side may be connected to the ground. The power supply unit may apply electromagnetic wave output such as RF (Radio Frequency) or microwave wave to each of the upper electrode 12 or the lower electrode 13, and applied to the upper electrode 12 or the lower electrode 13 Plasma may be formed in the reaction chamber 11 by the electromagnetic wave output. Ions excited in a plasma state may physically collide with the surface of the wafer, or may react chemically to be etched or deposited.

On the other hand, as shown in FIG. 2, particles (A) may be generated in the plasma (p), and particles (A) are charged to a floating potential by the surface accumulation of electrons with high mobility. , It has a negative charge. That is, the fine particles A generated in the bulk plasma p are negatively charged on the surface and can move in the direction of movement of the ions by an ion drag force _{(F i).} However, particles reaching the boundary between the plasma (P) and the sheath cannot enter the sheath by a strong electric field, and as shown in FIG. 2, the ion attraction _{force (F i} ) and the electrostatic force (F _e : Electrostatic force) It is mainly gathered at the sheath boundary that achieves this balance.

While plasma (p) is maintained, ion attraction _{force (F i} ) and electrostatic force (F _e ) are known as dominant forces, and the two forces are balanced near the sheath so that the trap of particulates (A) is It is maintained, but when a sudden change in the state of the plasma p occurs due to a change in an external electric field, the balance of the force is broken, and the fine particles A move.

In particular, immediately after the application of the electromagnetic wave output is stopped, the ion attraction _{force (F i} ) and the electrostatic force (F _e ) disappear, and most of the particulates trapped by the gas viscous force _{(F n: gas viscous force or neutral drag force)} This wafer w can be moved downwards where it is located. At this time, a significant number of particulates may fall to the surface of the wafer w and contaminate the wafer w.

Here, in order to prevent contamination of the wafer w, the plasma apparatus according to an embodiment of the present invention may further include a particulate removal member 13. That is, by placing the particulate removal member 13 on the upper end of the lower electrode 13, it is possible to remove particulates falling from the plasma p. Since the fine particles are charged with a negative charge, a positive voltage pulse can be applied to the fine particles removing member 13, and in this case, the fine particles can be pulled out in the direction of the fine particles removing member 13 by electric attraction. That is, since the particles move in the lateral direction of the wafer w, they may be moved away from the wafer w, and may be attached to the surface of the particle removing member 13 according to an exemplary embodiment. Through this, it is possible to prevent the particles from falling onto the surface of the wafer w, and then, by using a pump, the particles can be discharged to the outside together with the air inside the reaction chamber 110.

At this time, the particulate removal member 13 may be formed of a ring-shaped conductive material having a diameter larger than that of the lower electrode 13, as shown in FIG. 3, and It may be positioned at the same height as the lower electrode 13 or at a height spaced apart from the lower electrode 13 on the upper side. Here, since the particulate removal member 13 is formed in a ring shape including an opening, it is possible to minimize an effect on etching or deposition on the wafer w.

Meanwhile, the plasma device can be classified into a capacitively coupled plasma (CCP) device and an inductively coupled plasma (ICP) device, and the present invention is applicable to each plasma device.

Hereinafter, a capacitively coupled plasma device and an inductively coupled plasma device according to an embodiment of the present invention will be described with reference to FIGS. 4 and 5, respectively.

4 is a schematic diagram showing a capacitively coupled plasma device according to an embodiment of the present invention. The capacitively coupled plasma device 100 may be mainly used in semiconductor processes such as dry etching and chemical vapor deposition (CVD).

The capacitively coupled plasma apparatus 100 shown in FIG. 4 may be a flat electrode type plasma apparatus having a diameter of 300 mm (about 12 inches), and the lower electrode 140 and the lower electrode 140 on which the wafer w is placed. All the upper electrodes 150 corresponding to are made of stainless steel and may be made of SUS3404. In addition, the upper electrode 150 may include a shower head made of silicon so that gas is evenly sprayed over the entire electrode surface. Here, a power supply unit 170 may be connected to the upper electrode 150 and the lower electrode 140, respectively, and the power supply unit 170 may apply an electromagnetic wave output of RF to the upper electrode 150 and the lower electrode 140. .

The vacuum pump 130 discharges the internal air in the reaction chamber 110 to the outside, thereby making the inside of the reaction chamber 110 a vacuum state, and the gas injection unit 120 is an etching gas or The deposition gas may be injected through the showerhead of the upper electrode 150. Thereafter, the power supply unit 170 may apply an electromagnetic wave output to the upper electrode 150 and the lower electrode 140 to convert the etching gas or the deposition gas into a plasma (p) state.

Thereafter, in the reaction chamber 110, an etching or deposition process may be performed on the wafer w, and when the etching or deposition process is finished, the power supply 170 stops applying the electromagnetic wave output to generate the plasma p. You can stop spawning. However, if the generation of the plasma p is stopped, fine particles trapped in the sheath area of the plasma p move downward, and thus a problem such as contamination of the wafer w by the fine particles may occur.

Accordingly, when the etching or deposition process for the wafer w is completed, the control unit 190 gradually erases the electromagnetic wave output and applies a voltage pulse to the particulate removal member 160. ) Can be controlled. Through this, it is possible to remove the particles by using the particle removal member 160 before the particles generated by the plasma p reach the wafer (w). Here, the pulse applying unit 180 may perform a function of applying a preset voltage pulse to the particulate removal member 160.

Specifically, the control unit 190 may first cancel the electromagnetic wave output applied to the lower electrode 140 by controlling the power supply unit 170, and when there are a plurality of electromagnetic wave outputs applied to the upper electrode 150, the output is The large electromagnetic waves can be erased sequentially. Thereafter, when the electromagnetic wave output of the smallest output remains, first, the electromagnetic wave output may be lowered to a minimum output level other than zero, and a voltage pulse may be applied to the particulate removal member while erasing the corresponding electromagnetic wave output to zero. That is, the control unit 190 may sufficiently lower the electromagnetic wave output before applying the voltage pulse to the particulate removal member 160, and may apply the voltage pulse when finally completely erasing the electromagnetic wave output to perform particulate removal. .

Additionally, depending on the embodiment, it is possible for the control unit 190 to cool the particulate matter removal member 160 to induce the particulate matter to move in the direction of the particulate removal member 160. That is, it is possible to cool by flowing a cooling medium or the like inside the particulate removal member 160 so that a thermophoretic force acts between the particulates. In this case, the fine particles may receive thermal gradient force in addition to the electrical attraction, thereby attracting the fine particles in the direction of the fine particle removal member 160.

On the other hand, in the case where the wafer w is carried out of the reaction chamber 110 and the plasma p is not generated, the plasma device 100 may apply mechanical vibration to the particulate removal member 160. . In this case, since the particulates attached to the surface of the particulate removal member 160 may fall off, the vacuum pump 130 inside the reaction chamber 110 may be operated to discharge the particulates to the outside of the reaction chamber 110 at the same time. That is, before the particulates fall to the surface of the wafer w to be contaminated, they may be removed from the surface of the particulate removal member 160 in advance and discharged to the outside of the reaction chamber 110.

5 is a schematic diagram showing an inductively coupled plasma device according to an embodiment of the present invention.

The inductively coupled plasma apparatus 200 may install an induction coil above the reaction chamber 210 and generate plasma using an induction magnetic field generated from the induction coil. That is, the induced magnetic field generated by the induction coil may penetrate into the reaction chamber 210, and accordingly, the electric field may be induced in the etching gas or the deposition gas, thereby discharging the plasma p.

The inductively coupled plasma device 200 is capable of relatively low-pressure and high-density discharge because the amount of electrons and ions lost to the wall of the reaction chamber 210 during discharge is small, and due to the advantages of such a low-pressure process, recently Its application range is increasing continuously. However, since the plasma (p) generated in the inductively coupled plasma device 200 has very weak ion energy, a separate electromagnetic wave output is applied to the lower electrode 240 on which the wafer (w) is placed in order to obtain an anisotropic etching profile. By giving, the ions can be accelerated to the wafer w with sufficient energy. Unlike the capacitive-coupled plasma device 100, which is mainly _{used for etching dielectric films such as SiO 2} or Si ₃ N ₄ , the inductively-coupled plasma device 200 has a high gas decomposition and is a low-pressure process. It can be used in a process that is governed by the chemical etching mechanism of metals such as Al.

Specifically, the vacuum pump 230 discharges the internal air in the reaction chamber 210 to the outside, thereby making the inside of the reaction chamber 210 a vacuum state, and the gas injection unit 220 is in the reaction chamber 210 Etching gas or deposition gas can be injected. Thereafter, the induction coil power supply unit (s) supplies power to the induction coil to form an induction magnetic field in the induction coil, and the power supply unit 270 applies electromagnetic wave output to the lower electrode 240 to generate plasma inside the reaction chamber 210. (p) can be created.

When the plasma p is generated, an etching or deposition process may be performed on the wafer w in the reaction chamber 210, and when the etching or deposition process is completed, the control unit 290 removes the fine particles. You can perform an operation for it. That is, the control unit 290 may control the power supply unit 270 and the pulse applying unit 280 to apply a voltage pulse to the particulate removal member 260 while gradually erasing the electromagnetic wave output. Through this, it is possible to remove the fine particles by using the fine particles removing member 260 before the fine particles generated by the plasma (p) reaches the wafer (w).

Specifically, when a plurality of electromagnetic wave outputs being applied to the lower electrode 240 are present, the control unit 290 may sequentially erase the electromagnetic wave having a large output. Thereafter, when the electromagnetic wave output of the smallest output remains, first, the electromagnetic wave output may be lowered to a minimum output level other than zero, and a voltage pulse may be applied to the particulate removal member while erasing the corresponding electromagnetic wave output to zero. That is, the control unit 290 may sufficiently lower the electromagnetic wave output before applying the voltage pulse to the particulate removal member 260, and may apply the voltage pulse when finally completely erasing the electromagnetic wave output to perform particulate removal. .

Additionally, depending on the embodiment, the control unit 290 may cool the particulate matter removal member 260 to induce the particulate matter to move in the direction of the particulate matter removal member 260. In addition, in the case where the wafer (w) is carried out in the reaction chamber (210) and the plasma (p) is not generated, the plasma device 200 applies mechanical vibration to the particulate removal member 260 and reacts at the same time. By operating the vacuum pump 230 inside the chamber 210, particulates may be discharged to the outside of the reaction chamber 210.

6 is a flow chart showing a method of removing particulates in a plasma device according to an embodiment of the present invention.

Referring to FIG. 6, the plasma apparatus may generate plasma in a reaction chamber to perform an etching or deposition process on a wafer placed on the lower electrode (S110). That is, after injecting an etching gas or a deposition gas into the reaction chamber, a plasma can be generated by applying an electromagnetic wave output, and processes such as etching or deposition can be performed by a physical or chemical reaction by ions contained in the plasma. I can.

Here, when the plasma device is a capacitively coupled plasma (CCP) device, it may further include an upper electrode positioned opposite the lower electrode, and at least one electromagnetic wave output is provided to each of the upper electrode and the lower electrode. By applying it, a process such as etching or deposition may be performed.

In addition, when the plasma device is an inductively coupled plasma (ICP) device, an induction coil may be further included in the upper part of the reaction chamber, and at least one electromagnetic wave output is applied to the lower electrode, such as etching or deposition. The process of can be carried out.

When the etching or deposition process is completed, a voltage pulse may be applied to the particulate removal member positioned at a predetermined distance from the lower electrode while gradually erasing the electromagnetic wave output applied to generate the plasma (S120). That is, before applying the voltage pulse, the electromagnetic wave output may be sufficiently lowered in advance, and when the electromagnetic wave output is finally completely erased, the voltage pulse may be applied to remove particulates.

Here, in the case where the plasma device is a capacitively coupled plasma device, the electromagnetic wave output applied to the lower electrode may be first canceled, and then the electromagnetic wave output applied to the upper electrode may be canceled. In this case, if there are a plurality of electromagnetic wave outputs applied to the upper electrode, the electromagnetic wave having a larger output may be sequentially erased, and the electromagnetic wave output of the last remaining upper electrode may be lowered to a minimum output level other than zero. Thereafter, while erasing the electromagnetic wave output to zero, a voltage pulse may be applied to the particulate removal member at the same time.

On the other hand, when the plasma device is an inductively coupled plasma device, after lowering the electromagnetic wave output applied to the lower electrode, a voltage pulse is applied to the particulate removal member, and the electromagnetic wave output to the lower electrode may be eliminated to zero. Here, when there are a plurality of electromagnetic wave outputs applied to the lower electrode, the electromagnetic wave having a larger output is sequentially erased, and finally, the electromagnetic wave output of the lower electrode remaining is lowered to a minimum output level other than 0, and the electromagnetic wave output is reduced. A voltage pulse can be applied to the particulate removal member while erasing with zero.

Additionally, the plasma apparatus may cool the particulate removal member so that the particulates move in the direction of the particulate removal member by a thermophoretic force (S130). That is, it is possible to cool by flowing a cooling medium or the like inside the particulate removal member so that a thermophoretic force acts between the particulate matter and the particulate removal member. In this case, the fine particles may be subjected to thermal gradient force in addition to the electric attraction, and thereby may be attracted to move in the direction of the fine particle removing member. Depending on the embodiment, the step of cooling the particulate removal member (S130) may be performed before the step of applying the voltage pulse (S120), or may be performed at the same time.

In addition, when plasma is not generated, the plasma device may operate the vacuum pump and apply mechanical vibration to the particulate removal member (S140). That is, in the case where the wafer is carried out of the reaction chamber and plasma is not generated, the plasma device can apply mechanical vibration to the particulate removal member. In this case, since the particulates adhering to the surface of the particulate removal member may fall off, the vacuum pump inside the reaction chamber may be operated at the same time to discharge the particulates to the outside of the reaction chamber. Through this, before the particulates fall to the wafer surface to be contaminated, they can be removed from the surface of the particulate removal member and discharged to the outside of the reaction chamber.

The present invention described above can be implemented as a computer-readable code on a medium on which a program is recorded. The computer-readable medium may be one that continuously stores a program executable by a computer, or temporarily stores a program for execution or download. In addition, the medium may be a variety of recording means or storage means in a form in which a single piece of hardware or several pieces of hardware are combined. The medium is not limited to a medium directly connected to a computer system, but may be distributed on a network. Examples of media include magnetic media such as hard disks, floppy disks and magnetic tapes, optical recording media such as CD-ROMs and DVDs, magneto-optical media such as floptical disks, And there may be ones configured to store program instructions, including ROM, RAM, and flash memory. In addition, examples of other media include an app store that distributes applications, a site that supplies or distributes various software, and a recording medium or a storage medium managed by a server. Therefore, the detailed description above should not be construed as restrictive in all respects and should be considered as illustrative. The scope of the present invention should be determined by reasonable interpretation of the appended claims, and all changes within the equivalent scope of the present invention are included in the scope of the present invention.

The present invention is not limited by the above-described embodiments and the accompanying drawings. It will be apparent to those of ordinary skill in the art to which the present invention pertains, that components according to the present invention can be substituted, modified, and changed within the scope of the technical spirit of the present invention.

10: plasma device 11: reaction chamber
12: upper electrode 13: lower electrode
14: particulate removal member 100: capacity-coupled plasma device
200: inductively coupled plasma device 110, 210: reaction chamber
120, 220: gas injection unit 130, 230: vacuum pump
140, 240: lower electrode 150: upper electrode
160, 260: particulate removal member 170, 270: power supply unit
180, 280: pulse applying unit 190, 290: control unit

Claims (9)

In the method for removing particulates in a plasma device,
Generating plasma in the reaction chamber by a plasma device and performing an etching or deposition process on a wafer placed on the lower electrode;
When the etching or deposition process is completed, applying a voltage pulse to a particulate removal member positioned at a predetermined distance from the lower electrode while gradually erasing the electromagnetic wave output applied to generate the plasma by the plasma device; And
And removing particulates trapped in the sheath region of the plasma by attracting and removing particulates in the direction of the particulate removal member using an electric attraction caused by the voltage pulse.
The method of claim 1,
The plasma device is a capacitively coupled plasma (CCP) device, further comprising an upper electrode positioned opposite the lower electrode, and applying at least one electromagnetic wave output to each of the upper electrode and the lower electrode. A method for removing particulates, characterized in that.
The method of claim 2, wherein applying the voltage pulse
Canceling the electromagnetic wave output applied to the lower electrode;
If there are a plurality of electromagnetic wave outputs applied to the upper electrode, sequentially erasing the electromagnetic wave having a large output; And
And finally lowering the remaining electromagnetic wave output of the upper electrode to a non-zero minimum output level, and applying a voltage pulse to the particulate removal member while erasing the electromagnetic wave output to zero.
The method of claim 1,
The plasma device is an inductively coupled plasma (ICP) device, wherein at least one electromagnetic wave output is applied to the lower electrode.
The method of claim 4, wherein applying the voltage pulse
If there are a plurality of electromagnetic wave outputs applied to the lower electrode, sequentially erasing the electromagnetic wave having a large output; And
And finally lowering the remaining electromagnetic wave output of the lower electrode to a non-zero minimum output level, and then applying a voltage pulse to the particulate removing member while erasing the electromagnetic wave output to zero.
The method of claim 1,
And cooling the particulate matter removal member so that the particulate matter moves in the direction of the particulate matter removal member by a thermophoretic force.
The method of claim 1,
If the plasma is not generated, the step of applying a mechanical vibration to the particulate removal member while operating a vacuum pump for discharging the internal air of the reaction chamber, further comprising the step of applying a particulate removal method.
The method of claim 1, wherein the particulate removal member
A method for removing particulate matter, characterized in that it is formed of a ring-shaped conductive material, has a diameter larger than that of the lower electrode, and is located at the same height or higher than that of the lower electrode.
In the plasma apparatus comprising a particulate removal function,
Reaction chamber;
A gas injection unit for injecting an etching gas or a deposition gas into the reaction chamber;
A vacuum pump for discharging the air inside the reaction chamber to the outside;
A lower electrode located in the reaction chamber and on which a wafer is placed;
A particulate removal member positioned to be spaced apart from the lower electrode by a set distance;
A power supply for applying an electromagnetic wave output for converting the etching gas or deposition gas into a plasma state;
A pulse applying unit for applying a voltage pulse to the particulate removal member; And
And a control unit for controlling the power supply unit and the pulse applying unit to apply the voltage pulse to the particle removing member while gradually erasing the electromagnetic wave output when the etching or deposition process for the wafer is completed.

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