KR20210032660A - Plasma apparatus and the method for enhancing surface hydrophilicity of metal implant - Google Patents

Abstract

The present invention provides a plasma apparatus for hydrophilicity of a surface of a dental implant, which can transform the surface of the dental implant into hydrophilic using the dental implant as an electrode. To this end, the plasma apparatus comprises: a plasma reactor in which plasma gas is injected and turned into plasma; a reaction electrode coupled to an outer peripheral surface of the plasma reactor; a support rod for loading and fixing the dental implant into the plasma reactor; and a power supply unit for supplying plasma power to the reaction electrode.

Description

Plasma apparatus and the method for enhancing surface hydrophilicity of metal implant TECHNICAL FIELD

The present invention relates to the hydrophilization of the surface of a dental implant, and more particularly, to a plasma device for hydrophilizing the surface of a tooth implant and a method for hydrophilizing the surface of a tooth implant that uses the tooth implant as an electrode to modify the surface of the dental implant to hydrophilicity. About.

In general, dental implants that are placed in place of teeth are made of materials such as pure titanium.

The above-described dental implant has a disadvantage in that bone tissue formation is slow when blood is not well adhered to the implant during the procedure. Accordingly, materials such as titanium applied to the above-described dental implant have a problem in that the surface roughness value is not constant and the hydrophilicity is low, and the sealing takes a long time or fails in the initial osseointegration formation process.

For this reason, Korean Patent Registration No. 10-1305682 has provided a'surface modification apparatus and surface modification method for biomaterials for bioactive materials' that modify the surface of a dental implant by plasma ionization and then sputter deposition. Patent No. 10-2016-00656978 provides a technology for imparting hydrophilicity to the surface of a dental implant by irradiating ultraviolet rays inside a closed vacuum chamber and converting oxygen gas into plasma.

However, the dental implant surface modification devices of the prior art described above have a problem in that the configuration and structure of the device is complicated, and the adhesion between the dental implant surface modification material and the dental implant may be deteriorated.

Korean Patent Registration No. 10-1305682 Korean Patent Registration No. 10-2016-00656978

Accordingly, an embodiment of the present invention for solving the problems of the prior art described above has a simple structure, makes it possible to easily hydrophilize the dental implant surface, and improves the adhesion of the hydrophilic material to the dental implant surface. It is an object to be solved to provide a plasma device for hydrophilizing the surface of a tooth implant and a method for hydrophilizing the surface of a tooth implant.

In addition, an embodiment of the present invention is a plasma device for hydrophilizing the surface of a tooth implant to simplify the configuration of the plasma device by generating plasma with a single electrode, and to facilitate the plasma process for hydrophilizing the dental implant surface. And it is an object to be solved to provide a method for hydrophilizing the surface of a dental implant.

An embodiment of the present invention for achieving the object of the present invention described above, a plasma reaction tank in which plasma gas is injected to form a plasma; A reaction electrode coupled to the outer circumferential surface of the plasma reactor; A support rod for inserting a tooth implant into the plasma reactor and fixing it in an electrically open state; And a power supply unit for supplying plasma power to the reaction electrode.

The plasma reactor is characterized in that it is a cylindrical quartz tube (Quartz pipe).

The power supply unit is configured such that one electrode is connected to the electrode and the other end is grounded.

The power supply unit is configured to supply AC plasma power of any one of a sine wave, a triangular wave, and a square wave, a square wave, or a pulse wave having a frequency of 1 to 100 kHz and a voltage of 1 to 100 kV.

The support rod is characterized in that it is a ceramic rod.

The support rod is characterized in that it is composed of a ceramic rod made of _{Al 2} O _{3 material.}

The plasma gas is characterized in that the inert gas and oxygen mixed gas is supplied to flow through the inside of the plasma reactor at a flow of 1 to 100 slm.

The plasma reactor and the dental implant are located coaxially.

Another embodiment of the present invention for achieving the object of the present invention described above is a plasma reaction tank in which plasma gas is injected to form a plasma, a reaction electrode coupled to the outer circumferential surface of the plasma reaction tank, and a tooth implant inside the plasma reaction tank. In the method for hydrophilizing the surface of a tooth implant using a plasma device for hydrophilizing the surface of a tooth implant comprising a support rod that is charged and fixed in an electrically open state and a power supply unit for supplying plasma power to the reaction electrode, one of the support rods Fixing the dental implant at the end and then charging the dental implant so that the dental implant is located inside the plasma reactor; Supplying a plasma gas into the plasma reactor; And making the surface of the dental implant hydrophilic by converting the plasma gas, which supplies plasma power to the reaction electrode, by the power supply unit to the reaction electrode. .

The plasma gas supplied in the step of supplying the plasma gas is a mixed gas of inert gas and oxygen, and is supplied to flow through the interior of the plasma reaction tank at a rate of 1 to 100 slm.

In the step of charging the dental implant, the dental implant is fixed to a ceramic material support rod, and is charged and supported in the plasma reaction tank.

In the step of charging the dental implant, the plasma reactor and the dental implant are charged to be positioned coaxially.

In the step of charging the dental implant, the dental implant is _{fixed to an Al 2} O ₃ ceramic support rod, and is charged and supported in the plasma reactor.

The plasma power supplied in the step of hydrophilizing the surface of the dental implant is one of a sine wave, a triangular wave, a polygonal wave such as a square wave, a square wave, or a pulse wave having a frequency of 1 to 100 kHz and a voltage of 1 to 100 kV. It is characterized in that it is an AC plasma power supply.

The supply of the plasma power supplied in the step of hydrophilizing the surface of the dental implant is formed of a cylindrical tubular electrode in which the plasma reaction tank is formed as a cylindrical quartz tube, and the reaction electrode is coupled to the outer periphery of the cylindrical quartz. In the power supply unit, it is an AC plasma power supply that supplies AC plasma power of any one of a sine wave, a triangle wave, a square wave, etc. It is characterized.

The step of hydrophilizing the surface of the dental implant is characterized in that it is performed by holding the dental implant fixed to the support rod and loaded in the plasma for 30 to 60 seconds.

According to embodiments of the present invention, there is provided a plasma device for hydrophilizing the surface of a dental implant that has a simple structure, enables easy hydrophilization of the dental implant surface, and improves adhesion of a hydrophilic material to the dental implant surface. do.

In addition, according to an embodiment of the present invention, since plasma is generated only when a dental implant is inserted in a state in which plasma gas is supplied to the interior of the plasma device and plasma power is applied, repetitive dental implant hydrophilization is remarkably easy. It provides an effect that enables it to be performed.

1 is a cross-sectional view of a plasma apparatus 100 for hydrophilizing a dental implant surface according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view viewed from the direction A after cutting the plasma apparatus 100 of FIG. 1.
3 is a flow chart showing a process of a method for hydrophilizing a dental implant surface according to another embodiment of the present invention.

Hereinafter, the present invention will be described with reference to the accompanying drawings. However, the present invention may be implemented in various different forms, and therefore is not limited to the embodiments described herein. In the drawings, parts irrelevant to the description are omitted in order to clearly describe the present invention, and similar reference numerals are attached to similar parts throughout the specification.

Throughout the specification, when a part is said to be "connected (connected, contacted, bonded)" with another part, it is not only "directly connected", but also "indirectly connected" with another member in the middle. "Including the case. In addition, when a part "includes" a certain component, it means that other components may be further provided, rather than excluding other components, unless specifically stated to the contrary.

The terms used in the present specification are only used to describe specific embodiments, and are not intended to limit the present invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. In the present specification, terms such as "comprise" or "have" are intended to designate the presence of features, numbers, steps, actions, components, parts, or combinations thereof described in the specification, but one or more other features. It is to be understood that the presence or addition of elements or numbers, steps, actions, components, parts, or combinations thereof does not preclude in advance.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a cross-sectional view of a plasma apparatus 100 for hydrophilizing a dental implant surface according to an exemplary embodiment of the present invention, and FIG. 2 is a cross-sectional view of the plasma apparatus 100 of FIG. 1 as viewed from the direction A.

1 and 2, the plasma device 100 for hydrophilizing the surface of a dental implant according to an embodiment of the present invention (hereinafter, referred to as a'plasma device 100'), plasma gas is injected and discharged, and the plasma gas is injected and discharged therein. A tubular plasma reaction vessel 110 in which plasma of plasma gas is formed, a tubular reaction electrode 120 formed as a layer on the outer surface of the plasma reaction vessel 110, and the inside of the plasma reaction vessel 110 It is characterized in that it comprises a support rod 130 for fixing the tooth implant 1 to be surface hydrophilized to be positioned, and a power supply unit 140 for supplying plasma power to the reaction electrode 120.

The plasma reactor 110 is formed in a tubular shape with both ends open, and plasma gas 150 is injected from one open end to become plasma 2 in the inner region, and the plasma gas 150 is passed through the other end. It is formed in a tubular shape so as to form the discharged plasma gas flow and the plasma formation region and the implant surface hydrophilization region. In particular, the plasma reactor 110 may be manufactured and operated in a cylindrical tube shape, but may be variously manufactured in a cylindrical tube shape or a polygonal column tube shape. In addition, the plasma reactor 110 may be made of a quartz pipe having excellent heat resistance and durability.

The plasma gas supplied into the plasma reactor 110 is a mixed gas of oxygen and inert gases such as helium, neon, argon, xenon supplied by a separate plasma gas supply device (not shown in the drawing). It may be supplied at a flow rate of 100 slm and configured to generate a plasma gas flow in the plasma reactor 110.

The plasma gas is an inert gas and oxygen mixed gas having a mixing ratio of 90 vol% or more of inert gas and 10 vol% or less of oxygen gas. This is because the higher the oxygen gas, the greater the amount of ozone generated, so that it may leak out of the device, so that the oxygen gas ratio is preferably 10% by volume or less to prevent this. Therefore, the plasma gas is preferably a mixed gas of 90 vol% to 99.9 vol% of inert gas and 0.1 vol% to 10 vol% of oxygen gas.

The flow rate of the plasma gas is related to the diameter of the plasma device 100. Assuming that the diameter and flow rate of the condition for generating plasma are initially found, if the diameter is increased, the flow rate must be lowered to generate plasma at the same voltage, and the flow rate must be increased when the diameter is decreased. Since the diameter of the plasma device 100 is related to the size of the dental implant 1, if the level is 1 to 100 slm, plasma surface modification for hydrophilizing the surface of the dental implant 1 related to the tooth is all possible.

The reaction electrode 120 is an electrode tube made of a conductive material that provides mechanical strength to the plasma reaction tank 110 while applying high frequency power for generating plasma into the plasma reaction tank 110, and the plasma reaction tank ( 110) may be formed as a tube that is coupled to form a layer on the outer peripheral surface. The reaction electrode 120 may also have a cylindrical tube shape, which may be preferable for manufacturing and operation, but may be manufactured in various shapes according to the shape of the plasma reaction tank 110 in a cylindrical tube shape or a polygonal column tube shape.

The support rod 130 is composed of a rod so as to insert and fix the dental implant 1 into the plasma reaction tank 110. The support rod 130 may be a ceramic rod made of a ceramic material, and in particular, may be formed of a ceramic rod such as _{Al 2} O _{3 having heat resistance, oxidation resistance, and insulation.} The plasma apparatus 100 for hydrophilizing a dental implant surface according to an embodiment of the present invention is manufactured to have a single electrode in which the dental implant 1 is used as one electrode. Therefore, the dental implant 1 must be kept in an electrically open state with the plasma device 100 in the plasma device 100 for hydrophilizing the surface of the dental implant. Therefore, a ceramic material such as _{Al 2} O _{3 that} is well resistant to oxygen plasma is applied to the support rod 130 while supporting the dental implant 1 in an electrically open state inside the plasma device 100 for hydrophilizing the dental implant surface. I did. That is, the support rod 130 of the embodiment of the present invention is not limited to a ceramic material, and is non-conductive to keep the dental implant 1 and the plasma device 100 in an electrically open state inside the plasma device 100. Or, all materials with excellent insulation resistance and resistance to oxygen plasma can be applied.

The power supply unit 140 is configured as a power supply device that supplies plasma power to the reaction electrode. The power supply unit 140 is configured to supply plasma power, which is a high frequency AC power, to the reaction electrode 120 in order to generate the plasma 2 in the inner region of the plasma reaction tank 110. The plasma power source may be an AC power source of 1 to 100 kHz of a sine wave, a triangle wave, a square wave, or a pulse wave. Accordingly, the power supply unit 140 includes a waveform converter, a frequency converter such as a frequency multiplier, and a pulse modulator therein.

As the frequency of the plasma power increases, the plasma density increases, thereby improving the hydrophilic effect. In addition, since the density or life time of oxygen radicals varies according to the waveform of the plasma power, an optimized waveform may be selected and applied according to the size or shape of a dental implant such as titanium. Even in this case, when the frequency is less than 1 kHz, the voltage for generating the plasma is rapidly increased due to the low frequency, and when the frequency is more than 100 kHz, RF matching is considered, and the related circuit is added, resulting in an increase in unit cost. It is preferable to apply a plasma power source having a frequency in the range of 1 kHz to 100 kHz, which is commonly used.

The plasma apparatus 100 according to an embodiment of the present invention includes a support rod driving unit 170 for charging and withdrawing the support rod 130 into the plasma reaction tank 110 and a plasma gas supply unit 170 for supplying the plasma gas 150. ), the driving of the support rod driving unit 160, a plasma gas supply unit 170 supplying plasma gas for hydrophilicizing a tooth implant surface, and a control unit controlling the driving of the plasma power supply unit 130 for supplying plasma power It may be configured to further include (180).

In the plasma apparatus 100 of the present invention having the above-described configuration, the plasma gas 150 is supplied to the inside of the plasma reaction tank 110, and only when the dental implant 1 is charged while the plasma power is applied. A floating potential is formed on the surface of the dental implant 1 to generate a plasma 2.

3 is a flow chart showing a process of a method for hydrophilizing a dental implant surface according to another embodiment of the present invention.

As shown in FIG. 3, in the method of hydrophilizing the surface of a dental implant according to another embodiment of the present invention, a plasma reaction tank 110 in which plasma gas is injected to become plasma, and a reaction electrode 120 coupled to the outer circumferential surface of the plasma reaction tank 110 , A tooth implant surface hydrophilicity comprising a support rod 130 for loading and fixing the dental implant 1 into the plasma reaction tank 110 and a power supply unit 140 for supplying plasma power to the reaction electrode 120 In the method for hydrophilizing the surface of a tooth implant using a plasma apparatus for forming 100, after fixing the tooth implant 1 to one end of the support rod 130, the tooth implant 1 is placed inside the plasma reaction tank 110. Inserting the dental implant 2 so that it is positioned (S10), supplying plasma gas into the plasma reaction tank 110 (S20), and the power supply unit 140 supplies plasma power to the reaction electrode 120 It characterized in that it comprises a step (S30) of making the surface of the dental implant hydrophilic by supplying the plasma gas to plasma.

In the step of charging the dental implant 1 into the plasma reactor 110 (S10), when the dental implant 1 is fixed to the end of the support rod 130, the control unit 180 controls the support rod driving unit 160 The tooth implant 1 is positioned inside the plasma reactor 110 by controlling the end of the support rod 130 to which the tooth implant 1 is fixed is inserted into the plasma reactor 110. At this time, the plasma reactor 110 and the dental implant 1 are charged to be located coaxially so that the potential difference between the plasma reactor 110 and the surface of the dental implant 1 has almost equipotential as a whole.

Next, in the step (S20) of supplying the plasma gas into the plasma reactor 110, the plasma gas supply unit 170 supplies the plasma gas into the plasma reactor 110 under the control of the controller 180. Supply.

Thereafter, in the step of hydrophilizing the surface of the dental implant (S30), under the control of the controller 180, the plasma power supply unit 130 supplies plasma power to the reaction electrode 120, and plasma gas is supplied. The high frequency AC power is applied by the plasma power and the electrode action of the dental implant 1 to generate the plasma gas plasma 2, thereby performing surface modification to hydrophilize the surface of the dental implant 1. At this time, the supplied plasma power may be an AC power source having a frequency of 1 to 100 kHz and a voltage of 1 to 100 kV of a sine wave, a triangular wave, a polygonal wave such as a square wave, a square wave, or a pulse wave.

In this case, when the dental implant 1 is not charged into the plasma reaction tank 110, the plasma gas 150 is not formed as the plasma 2 even when the plasma power is supplied to the reaction electrode 120. In contrast, when the dental implant 1 is charged in the plasma reaction tank 110, when plasma power is applied to the reaction electrode 120, a floating potential is formed on the surface of the dental implant 1 Thus, the plasma gas 150 forms the plasma 2, and oxygen radicals are attached to the dental implant 1 to undergo hydrophilization. In this case, when the plasma 2 of the plasma device 100 supplies the plasma gas 150 to the interior of the plasma reaction tank 110 and the plasma power is applied, the dental implant 1 is charged. It is created only. Accordingly, the present invention provides an effect of allowing repetitive dental implant hydrophilization to be performed remarkably easily.

By holding the dental implant 1 in the plasma 2 of the plasma gas 150 generated as described above for 30 to 60 seconds, the surface of the dental implant 1 is modified to be hydrophilic.

As a result of the experiment, after exposing the dental implant 1 to the plasma for more than 30 seconds, it was confirmed that water was wetted along the surface when the tip of the dental implant 1 was brought into contact with water. Therefore, when the plasma exposure time of the dental implant 1 is 30 seconds or more, it has sufficient hydrophilicity. In addition, since the tooth implant surface hydrophilization treatment of the present invention is used immediately before the implant procedure, and must be hydrophilized within a very short time, the time during which the tooth implant 1 is exposed inside the plasma 2 of the plasma gas 150 It is preferable that it is 60 seconds or less.

Although the technical idea of the present invention described above has been described in detail in the preferred embodiment, it should be noted that the above-described embodiment is for the purpose of explanation and not for the limitation thereof. In addition, those of ordinary skill in the technical field of the present invention will understand that various embodiments are possible within the scope of the technical idea of the present invention. Therefore, the true technical protection scope of the present invention should be determined by the technical spirit of the appended claims.

1: tooth implant
2: plasma
100: plasma device
110: plasma reactor
120: reaction electrode
130: support rod
140: power supply
150: plasma gas

Claims (15)

A plasma reactor in which plasma gas is injected to form a plasma;
A reaction electrode coupled to the outer circumferential surface of the plasma reactor;
A support rod for inserting and fixing a tooth implant into the plasma reactor; And
A plasma apparatus for hydrophilizing a dental implant surface, comprising: a power supply unit for supplying plasma power to the reaction electrode. The method of claim 1, wherein the plasma reaction tank,
Plasma device for hydrophilizing the surface of a dental implant, characterized in that the cylindrical quartz tube. The method of claim 1, wherein the power supply unit,
A plasma apparatus for hydrophilizing a dental implant surface, characterized in that it is configured to supply AC plasma power of any one of a sine wave, a triangle wave, a square wave, or a pulse wave having a frequency of 1 kHz to 100 kHz and a voltage of 1 kV to 100 kV. The method of claim 1, wherein the support bar,
Plasma device for hydrophilizing the surface of a dental implant, characterized in that the ceramic seal. The method of claim 1, wherein the support bar,
Plasma device for hydrophilizing the surface of a dental implant, characterized in that consisting of a ceramic rod made of Al ₂ O _{3 material.} The method of claim 1, wherein the plasma gas,
Plasma apparatus for hydrophilizing a dental implant surface, characterized in that the inert gas and oxygen mixed gas are supplied to flow through the interior of the plasma reactor at a flow of 1 to 100 slm. The method of claim 1, wherein the plasma reaction tank and the support rod,
A plasma apparatus for hydrophilizing a dental implant surface, characterized in that the dental implant charged into the plasma reaction tank and the plasma reaction tank are coaxially disposed. Plasma reaction tank in which plasma gas is injected to form a plasma, reaction electrode coupled to the outer circumferential surface of the plasma reaction tank, a support rod for charging and fixing a tooth implant inside the plasma reaction tank, and a power supply for supplying plasma power to the reaction electrode In the method for hydrophilizing the surface of a tooth implant using a plasma device for hydrophilizing the surface of a tooth implant comprising,
Fixing the dental implant to one end of the support rod and then loading the dental implant so that the dental implant is located inside the plasma reactor;
Supplying a plasma gas into the plasma reactor; And
And hydrophilizing the surface of the dental implant by converting the plasma gas, which supplies plasma power to the reaction electrode, by the power supply unit to the reaction electrode. The method of claim 8, wherein the plasma gas supplied in the step of supplying the plasma gas,
A method for hydrophilizing a dental implant surface, characterized in that the inert gas and oxygen mixed gas are supplied to flow through the plasma reactor at a flow rate of 1 to 100 slm. The method of claim 8, wherein in the step of charging the dental implant,
The dental implant surface hydrophilization method, characterized in that the tooth implant is fixed to a support rod made of ceramic and charged into the interior of the plasma reactor to be supported. The method of claim 8, wherein in the step of charging the dental implant,
The dental implant is _{fixed to an Al 2} O ₃ ceramic support rod, and is charged into and supported by the plasma reactor. The method of claim 8, wherein in the step of charging the dental implant,
The plasma reaction tank and the dental implant is a method of hydrophilizing the surface of a dental implant, characterized in that located coaxially. The method of claim 8, wherein the plasma power supplied in the step of hydrophilizing the surface of the dental implant,
A method for hydrophilizing a dental implant surface, characterized in that the AC plasma power source is any one of a sine wave, a triangle wave, a square wave, or a pulse wave having a frequency of 1 to 100 kHz and a voltage of 1 to 100 kV. The method of claim 8, wherein the supply of the plasma power supplied in the step of hydrophilizing the surface of the dental implant,
The plasma reaction tank is formed of a cylindrical quartz tube, and the reaction electrode is formed of a cylindrical electrode coupled to the outer periphery of the cylindrical quartz, so that the power supply unit has a sine wave having a frequency of 1 kHz to 100 kHz and a voltage of 1 kV to 100 kV. , AC plasma power supply for supplying AC power of any one of a triangular wave, a square wave, or a pulse wave. The method of claim 8, wherein the step of hydrophilizing the surface of the dental implant,
A method for hydrophilizing a dental implant surface, characterized in that it is performed by holding the dental implant fixed to the support rod and charged in the plasma for 30 to 60 seconds.

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