KR20210018248A - Imaging device - Google Patents

Abstract

The present disclosure relates to an imaging device capable of reducing the size and height of the device configuration, suppressing the occurrence of flares and ghosts, and preventing the lens from peeling off. It is set to the thinnest thickness of the lens formed on the solid-state image sensor <the thickness of the glass substrate <the thickest thickness of the lens. The present disclosure can be applied to an imaging device.

Description

Imaging device

The present disclosure relates to an image pickup device, and more particularly, to an image pickup device capable of taking an image while suppressing the occurrence of flare or ghost while realizing the miniaturization and height reduction of the device configuration.

BACKGROUND ART In recent years, in a solid-state imaging device used in a mobile terminal device equipped with a camera, a digital still camera, and the like, high pixel size, miniaturization, and height reduction have been progressing.

As cameras become more pixelated and smaller, the lens and the solid-state imaging device are generally closer to each other on the optical axis, and an infrared cut filter is generally disposed near the lens.

For example, a technique has been proposed to realize miniaturization of the solid-state imaging device by configuring a lens serving as the lowest layer in a lens group consisting of a plurality of lenses on a solid-state imaging device.

Patent Document 1: Japanese Patent Laid-Open No. 2015-061193

However, if the lens of the lowest layer is configured on the solid-state image sensor, it contributes to miniaturization or height reduction of the device configuration, but the distance between the infrared light cut filter and the lens becomes close, resulting in internal diffused reflection due to light reflection. Flare or ghost caused by

The present disclosure has been made in view of such a situation, and in particular, in a solid-state imaging device, it is possible to reduce the size and height of a solid-state image pickup device, while suppressing the occurrence of flares and ghosts.

An imaging device according to an aspect of the present disclosure includes a solid-state imaging device that generates a pixel signal by photoelectric conversion according to an amount of incident light, and a lens comprising a plurality of lenses that focus the incident light on a light-receiving surface of the solid-state imaging device. Including a group, and among the lens groups, a lowermost layer lens constituting a lowermost layer with respect to the incident direction of the incident light is formed at the front end with respect to the direction of receiving the incident light, and the lowermost layer lens is an aspherical concave lens, the The thickness of the glass substrate installed on the solid-state imaging device and to which the lowermost layer lens is attached is thicker than the thinnest thickness of the lowermost layer lens, and the thickest thickness of the lowermost layer lens is thicker than the thickness of the glass substrate installed on the solid-state imaging device. Device.

In one aspect of the present disclosure, a pixel signal is generated by photoelectric conversion according to the amount of incident light by a solid-state imaging device, and the incident light is generated with respect to the light-receiving surface of the solid-state imaging device by a lens group consisting of a plurality of lenses. The focused, concave-shaped lowermost layer lens of the lens group, constituting the lowest layer with respect to the incident direction of the incident light, is configured at the front end with respect to the direction in which the incident light is received, the incident light An effective area for condensing light to the imaging device is set, the thickness of the glass substrate to which the lowermost layer lens is attached is thicker than the thinnest thickness of the lens, and the thickest thickness of the lowermost layer lens is of the glass substrate installed on the solid-state imaging device. Thicker than the thickness.

According to one aspect of the present disclosure, in particular, in a solid-state imaging device, it becomes possible to reduce the size and height of the device configuration and suppress the occurrence of flares and ghosts.

1 is a diagram illustrating a configuration example of a first embodiment of an imaging device of the present disclosure.
FIG. 2 is an external schematic diagram of an integrated configuration unit including a solid-state imaging device in the imaging device of FIG. 1.
3 is a diagram for explaining a substrate configuration of an integrated configuration unit.
4 is a diagram showing an example of a circuit configuration of a laminated substrate.
5 is a diagram showing an equivalent circuit of a pixel.
6 is a diagram showing a detailed structure of a laminated substrate.
FIG. 7 is a diagram illustrating that no ghost or flare caused by internal diffuse reflection occurs in the imaging device of FIG. 1.
FIG. 8 is a diagram for explaining that no ghost or flare due to internal diffuse reflection occurs in an image captured by the imaging device of FIG. 1.
9 is a diagram illustrating a configuration example of a second embodiment of the imaging device of the present disclosure.
FIG. 10 is a diagram explaining that no ghost or flare due to internal diffuse reflection occurs in the imaging device of FIG. 9.
11 is a diagram illustrating a configuration example of a third embodiment of the imaging device of the present disclosure.
12 is a diagram illustrating a configuration example of a fourth embodiment of the imaging device of the present disclosure.
13 is a diagram illustrating a configuration example of a fifth embodiment of the imaging device of the present disclosure.
14 is a diagram illustrating a configuration example of a sixth embodiment of the imaging device of the present disclosure.
15 is a diagram illustrating a configuration example of a seventh embodiment of the imaging device of the present disclosure.
16 is a diagram illustrating a configuration example of an eighth embodiment of the imaging device of the present disclosure.
17 is a diagram illustrating a configuration example of a ninth embodiment of the imaging device of the present disclosure.
18 is a diagram illustrating a configuration example of a tenth embodiment of an imaging device of the present disclosure.
19 is a diagram illustrating a configuration example of an eleventh embodiment of the imaging device of the present disclosure.
20 is a diagram illustrating a configuration example of a twelfth embodiment of the imaging device of the present disclosure.
21 is a diagram illustrating a configuration example of a thirteenth embodiment of the imaging device of the present disclosure.
22 is a diagram illustrating a configuration example of a fourteenth embodiment of the imaging device of the present disclosure.
23 is a diagram for describing a configuration example of a fifteenth embodiment of the imaging device of the present disclosure.
24 is a diagram for describing a modified example of the external shape of the lens in FIG. 23.
FIG. 25 is a diagram for explaining a modified example of the structure of the lens end portion of FIG. 23.
FIG. 26 is a diagram for explaining a modified example of the structure of the lens end portion of FIG. 23.
FIG. 27 is a diagram for explaining a modified example of the structure of the lens end portion of FIG. 23.
FIG. 28 is a diagram illustrating a modified example of the structure of the lens end portion of FIG. 23.
29 is a diagram illustrating a configuration example of a sixteenth embodiment of the imaging device of the present disclosure.
30 is a diagram illustrating a method of manufacturing the imaging device of FIG. 29.
FIG. 31 is a diagram for explaining a modified example of the individualized cross section of the configuration example of FIG. 29.
FIG. 32 is a diagram illustrating a method of manufacturing the imaging device in the upper left portion of FIG. 31.
33 is a diagram illustrating a method of manufacturing the imaging device in the lower left portion of FIG. 31.
FIG. 34 is a diagram illustrating a method of manufacturing the imaging device in the upper right portion of FIG. 31.
FIG. 35 is a diagram illustrating a method of manufacturing the imaging device in the lower right portion of FIG. 31.
FIG. 36 is a diagram for explaining a modified example in which an antireflection film is added in the configuration of FIG. 29.
FIG. 37 is a diagram for explaining a modified example in which an antireflection film is added to the side surface in the configuration of FIG. 29;
38 is a diagram illustrating a configuration example of a seventeenth embodiment of the imaging device of the present disclosure.
39 is a diagram for explaining the thickness condition of a lens capable of capturing a small, lightweight, high-resolution image.
40 is a diagram illustrating a stress distribution applied to an AR coating on a lens under a mounting reflow heat load according to the shape of the lens.
41 is a diagram for describing a modified example of the shape of the lens in FIG. 39.
42 is a view for explaining the shape of the two-stage side-type lens of FIG. 41.
43 is a view for explaining a modified example of the shape of the two-stage side-type lens of FIG. 41.
FIG. 44 is a diagram for explaining a stress distribution applied to AR coating on a lens under a mounting reflow heat load of the two-stage side-type lens of FIG. 41;
FIG. 45 is a diagram for explaining the maximum value of the stress distribution applied to the AR coating on the lens during the mounting reflow heat load of FIG. 44;
46 is a diagram for describing a manufacturing method in the eighteenth embodiment of the imaging device of the present disclosure.
47 is a diagram for describing a modified example of the manufacturing method in FIG. 46.
48 is a diagram illustrating a method of manufacturing a two-stage side-type lens.
49 is a view for explaining a modified example of a method of manufacturing a two-stage side-type lens.
FIG. 50 illustrates adjustment of the angle formed by the average side surface, adjustment of surface roughness, and provision of a hemming bottom portion in the method of manufacturing the two-stage side-type lens of FIG. 49 It is a drawing.
51 is a diagram illustrating a configuration example of the 19th embodiment of the imaging device of the present disclosure.
52 is a diagram for describing an example of the alignment mark in FIG. 51.
53 is a diagram for describing an application example using the alignment mark in FIG. 51.
54 is a diagram illustrating a configuration example of a twentieth embodiment of an imaging device of the present disclosure.
Fig. 55 is a view for explaining the stress distribution applied to the AR coating during mounting reflow heat load in the case where the AR coating is formed on the entire surface and in other cases.
56 is a diagram illustrating a configuration example of a 21st embodiment of the imaging device of the present disclosure.
Fig. 57 is a diagram for explaining an example of forming a light shielding film on a side surface by configuring a lens and a bank to be connected.
58 is a block diagram showing a configuration example of an imaging device as an electronic device to which the camera module of the present disclosure is applied.
59 is a diagram illustrating an example of use of a camera module to which the technology of the present disclosure is applied.
60 is a diagram showing an example of a schematic configuration of an endoscopic surgery system.
61 is a block diagram showing an example of a functional configuration of a camera head and a CCU.
62 is a block diagram showing an example of a schematic configuration of a vehicle control system.
63 is an explanatory diagram showing an example of an installation position of an out-of-vehicle information detection unit and an imaging unit.

Hereinafter, preferred embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. On the other hand, in the present specification and drawings, elements having substantially the same functional configuration are denoted by the same reference numerals, so that redundant descriptions are omitted.

Hereinafter, an embodiment for carrying out the present disclosure (hereinafter referred to as an embodiment) will be described. In addition, explanation is performed in the following order.

1. First embodiment

2. Second embodiment

3. Third embodiment

4. Fourth embodiment

5. Fifth embodiment

6. Sixth embodiment

7. Seventh embodiment

8. Eighth embodiment

9. The ninth embodiment

10. The tenth embodiment

11. The eleventh embodiment

12. Twelveth embodiment

13. The thirteenth embodiment

14. Fourteenth Embodiment

15. The fifteenth embodiment

16. The sixteenth embodiment

17. The seventeenth embodiment

18. The eighteenth embodiment

19. The nineteenth embodiment

20. 20th embodiment

21. The 21st embodiment

22. Examples of application to electronic devices

23. Example of using solid-state imaging device

24. Examples of application to endoscopic surgery system

25. Application example to moving object

<1. First embodiment>

<Configuration example of imaging device>

Referring to Fig. 1, a configuration example of the imaging device according to the first embodiment of the present disclosure which suppresses the occurrence of ghosts and flares while realizing downsizing and height reduction of the device configuration will be described. On the other hand, Fig. 1 is a side cross-sectional view of an imaging device.

The imaging device 1 of FIG. 1 includes a solid-state imaging element 11, a glass substrate 12, an IRCF (infrared light cut filter) 14, a lens group 16, a circuit board 17, and an actuator 18. , A connector 19, and a spacer 20.

The solid-state image sensor 11 is an image sensor made of a so-called CMOS (Complementary Metal Oxide Semiconductor), a CCD (Charge Coupled Device), or the like, and is fixed in an electrically connected state on a circuit board 17. The solid-state imaging device 11 is composed of a plurality of pixels arranged in an array shape, as described later with reference to FIG. 4, and incident light is incident by condensing through the lens group 16 from the upper side of the drawing in pixel units. A pixel signal according to the amount of light is generated, and is output from the connector 19 to the outside through the circuit board 17 as an image signal.

A glass substrate 12 is provided on the upper surface portion of FIG. 1 of the solid-state image sensor 11, and is transparent, that is, bonded by an adhesive (GLUE) 13 having substantially the same refractive index as the glass substrate 12. .

On the upper surface of the glass substrate 12 in FIG. 1, an IRCF 14 that blocks infrared light among incident light is provided, and is transparent, that is, an adhesive (GLUE) 15 having substantially the same refractive index as the glass substrate 12 It is joined by The IRCF 14 is made of, for example, a blue plate glass, and blocks (removes) infrared light.

That is, the solid-state imaging device 11, the glass substrate 12, and the IRCF 14 are laminated and bonded with transparent adhesives 13 and 15 to form an integral structure, and are connected to the circuit board 17. . In addition, the solid-state imaging element 11, the glass substrate 12, and the IRCF 14 surrounded by the dashed-dotted line in the figure are bonded by adhesives 13 and 15 having substantially the same refractive index to form an integrated structure. Hereinafter, it is also simply referred to as the integral component 10.

In addition, the IRCF 14 may be attached on the glass substrate 12 after being divided into pieces in the manufacturing process of the solid-state imaging device 11, and a wafer-like structure comprising a plurality of solid-state imaging devices 11 After attaching the large-sized IRCF 14 to the whole on the glass substrate 12, it may be divided into units of the solid-state image sensor 11, or any method may be employed.

The spacer 20 is formed on the circuit board 17 so as to surround the whole solid-state image sensor 11, the glass substrate 12, and the IRCF 14 integrally formed. Further, an actuator 18 is provided on the spacer 20. The actuator 18 has a cylindrical shape, and has a lens group 16 formed by stacking a plurality of lenses in the cylinder, and is driven in the vertical direction in FIG. 1.

With this configuration, the actuator 18 moves the lens group 16 in an up-down direction in FIG. 1 (a front-rear direction with respect to the optical axis), so that solid-state imaging according to the distance to an object not shown upward in the drawing Autofocus is achieved by adjusting the focus so as to image a subject on the imaging plane of the element 11.

<Appearance schematic>

Next, the configuration of the integrated configuration unit 10 will be described with reference to FIGS. 2 to 6. 2 is a schematic diagram showing the appearance of the integrated configuration unit 10.

The integrated configuration unit 10 shown in Fig. 2 is a semiconductor package in which a solid-state imaging device 11 is packaged, which is formed of a laminated substrate in which a lower substrate 11a and an upper substrate 11b are stacked.

On the lower substrate 11a of the laminated substrate constituting the solid-state imaging device 11, a plurality of solder balls 11e, which are back electrodes for electrically connecting to the circuit board 17 of FIG. 1, are formed.

On the upper surface of the upper substrate 11b, an R (red), G (green), or B (blue) color filter 11c and an on-chip lens 11d are formed. Further, the upper substrate 11b is connected to a non-cavity structure through a glass substrate 12 for protecting the on-chip lens 11d and an adhesive 13 made of a glass seal resin. .

For example, on the upper substrate 11b, as shown in Fig. 3A, a pixel region 21 in which pixel portions for photoelectric conversion are two-dimensionally arranged in an array, and a control circuit 22 for controlling the pixel portion Is formed, and a logic circuit 23 such as a signal processing circuit for processing the pixel signal output from the pixel portion is formed on the lower substrate 11a.

Alternatively, as shown in FIG. 3B, only the pixel region 21 is formed on the upper substrate 11b, and the control circuit 22 and the logic circuit 23 are formed on the lower substrate 11a.

As described above, by forming and stacking both the logic circuit 23 or the control circuit 22 and the logic circuit 23 on the lower substrate 11a different from the upper substrate 11b of the pixel region 21, Compared with the case where the pixel region 21, the control circuit 22, and the logic circuit 23 are arranged in a planar direction on a single semiconductor substrate, the size of the imaging device 1 can be reduced.

Hereinafter, the upper substrate 11b on which the pixel region 21 is formed is referred to as a pixel sensor substrate 11b, and the lower substrate 11a on which the logic circuit 23 is formed is referred to as a logic substrate 11a. Do.

<Configuration example of laminated substrate>

4 shows an example of the circuit configuration of the solid-state imaging device 11.

The solid-state image sensor 11 includes a pixel array unit 33 in which pixels 32 are arranged in a two-dimensional array, a vertical driving circuit 34, a column signal processing circuit 35, a horizontal driving circuit 36, and an output. A circuit 37, a control circuit 38, and an input/output terminal 39 are included.

The pixel 32 includes a photodiode as a photoelectric conversion element and a plurality of pixel transistors. An example of the circuit configuration of the pixel 32 will be described later with reference to FIG. 5.

Also, the pixel 32 may have a shared pixel structure. This pixel sharing structure includes a plurality of photodiodes, a plurality of transfer transistors, one shared floating diffusion (floating diffusion region), and one shared other pixel transistor. That is, in the shared pixel, a photodiode and a transfer transistor constituting a plurality of unit pixels are configured by sharing one other pixel transistor.

The control circuit 38 receives an input clock and data for instructing an operation mode, etc., and further outputs data such as internal information of the solid-state imaging element 11. That is, the control circuit 38 is based on the vertical synchronization signal, the horizontal synchronization signal, and the master clock, the reference of the operation of the vertical driving circuit 34, the column signal processing circuit 35, the horizontal driving circuit 36, etc. It generates a clock signal or a control signal. Then, the control circuit 38 outputs the generated clock signal or control signal to the vertical driving circuit 34, the column signal processing circuit 35, the horizontal driving circuit 36, and the like.

The vertical drive circuit 34 is configured by, for example, a shift register, selects a predetermined pixel drive line 40, and supplies a pulse for driving the pixel 32 to the selected pixel drive line 40. , Drives the pixels 32 in row units. That is, the vertical driving circuit 34 selectively scans each pixel 32 of the pixel array unit 33 in a vertical direction sequentially in row units, and is generated according to the amount of light received in the photoelectric conversion unit of each pixel 32. The pixel signal based on the signal charge is supplied to the column signal processing circuit 35 via the vertical signal line 41.

The column signal processing circuit 35 is arranged for each column of the pixel 32, and performs signal processing such as noise removal for each pixel column on the signal output from the pixel 32 for one row. For example, the column signal processing circuit 5 performs signal processing such as CDS (Correlated Double Sampling) and AD conversion for removing pixel-specific fixed pattern noise.

The horizontal drive circuit 36 is configured by, for example, a shift register, and sequentially outputs horizontal scanning pulses to sequentially select each of the column signal processing circuits 35, and each of the column signal processing circuits 35 The pixel signal is output from the horizontal signal line 42.

The output circuit 37 performs signal processing and outputs signals sequentially supplied from each of the column signal processing circuits 35 through the horizontal signal line 42. The output circuit 37 may perform only buffering, for example, and may perform black level adjustment, column deviation correction, various digital signal processing, and the like. The input/output terminal 39 exchanges signals with the outside.

The solid-state image sensor 11 configured as described above is a CMOS image sensor called a column AD method in which the column signal processing circuit 35 for performing CDS processing and AD conversion processing is arranged for each pixel column.

<Example of circuit configuration of pixels>

5 shows an equivalent circuit of the pixel 32.

The pixel 32 shown in Fig. 5 shows a configuration that realizes an electronic global shutter function.

The pixel 32 is a photodiode 51 as a photoelectric conversion element, a first transfer transistor 52, a memory unit (MEM) 53, a second transfer transistor 54, a floating diffusion region (FD) 55 , A reset transistor 56, an amplifying transistor 57, a selection transistor 58, and an emission transistor 59.

The photodiode 51 is a photoelectric conversion unit that generates and stores electric charge (signal charge) according to the amount of light received. While the anode terminal of the photodiode 51 is grounded, the cathode terminal is connected to the memory unit 53 through the first transfer transistor 52. Further, the cathode terminal of the photodiode 51 is also connected to a discharge transistor 59 for discharging unnecessary charges.

When the first transfer transistor 52 is turned on by the transfer signal TRX, the charge generated by the photodiode 51 is read and transferred to the memory unit 53. The memory unit 53 is a charge holding unit that temporarily holds electric charges until electric charges are transferred to the FD 55.

When the second transfer transistor 54 is turned on by the transfer signal TRG, the second transfer transistor 54 reads out the electric charge held in the memory unit 53 and transfers it to the FD 55.

The FD 55 is a charge holding unit that holds the electric charge read from the memory unit 53 as a signal. When the reset transistor 56 is turned on by the reset signal RST, charges accumulated in the FD 55 are discharged to the constant voltage source VDD, thereby resetting the potential of the FD 55.

The amplifying transistor 57 outputs a pixel signal according to the potential of the FD 55. That is, the amplifying transistor 57 constitutes a load MOS 60 as a constant current source and a source follower circuit, and a pixel signal indicating a level according to the charge accumulated in the FD 55 is selected from the amplifying transistor 57 It is output to the column signal processing circuit 35 (Fig. 4) through the transistor 58. The load MOS 60 is disposed in the column signal processing circuit 35, for example.

The selection transistor 58 is turned on when the pixel 32 is selected by the selection signal SEL, and transmits the pixel signal of the pixel 32 to the column signal processing circuit 35 through the vertical signal line 41. Print.

When the discharge transistor 59 is turned on by the discharge signal OFG, the unnecessary charge accumulated in the photodiode 51 is discharged to the constant voltage source VDD.

The transmission signals TRX and TRG, the reset signal RST, the emission signal OFG, and the selection signal SEL are supplied from the vertical driving circuit 34 through the pixel driving line 40.

The operation of the pixel 32 will be briefly described.

First, before the start of exposure, a high-level discharge signal (OFG) is supplied to the discharge transistor 59, so that the discharge transistor 59 is turned on, and the charges accumulated in the photodiode 51 are transferred to the constant voltage source VDD. As a result, the photodiodes 51 of all the pixels are reset.

After the photodiode 51 is reset, when the emission transistor 59 is turned off by the emission signal OFG at a low level, exposure is started in all pixels of the pixel array unit 33.

When a predetermined exposure time has elapsed, the first transfer transistor 52 is turned on by the transfer signal TRX in all the pixels of the pixel array unit 33, and accumulated in the photodiode 51. The electric charge is transferred to the memory unit 53.

After the first transfer transistor 52 is turned off, the electric charges held in the memory unit 53 of each pixel 32 are read out by the column signal processing circuit 35 in row units and sequentially. In the read operation, the second transfer transistor 54 of the pixel 32 in the read row is turned on by a transfer signal TRG, and the electric charge held in the memory unit 53 is transferred to the FD 55. Then, when the selection transistor 58 is turned on by the selection signal SEL, a signal representing the level according to the charge accumulated in the FD 55 is transferred from the amplifying transistor 57 to the column through the selection transistor 58. It is output to the signal processing circuit 35.

As described above, in the pixel 32 having the pixel circuit of FIG. 5, the exposure time is set the same for all the pixels of the pixel array unit 33, and the charge is temporarily held in the memory unit 53 after exposure is completed. Then, the global shutter method operation (imaging) of sequentially reading electric charges in row units from the memory unit 53 is possible.

On the other hand, the circuit configuration of the pixel 32 is not limited to the configuration shown in Fig. 5, for example, a circuit configuration that does not have the memory unit 53 and performs an operation by a so-called rolling shutter method. You can also hire.

<Example of basic structure of solid-state imaging device>

Next, a detailed structure of the solid-state imaging device 11 will be described with reference to FIG. 6. 6 is an enlarged cross-sectional view of a part of the solid-state imaging device 11.

On the logic substrate 11a, a multilayer wiring layer 82 is formed on the upper side (the pixel sensor substrate 11b side) of the semiconductor substrate 81 (hereinafter referred to as the silicon substrate 81) made of, for example, silicon (Si). Is formed. The control circuit 22 and the logic circuit 23 of FIG. 3 are configured by the multilayer wiring layer 82.

The multilayer wiring layer 82 is formed of a plurality of wiring layers 83a of the uppermost layer closest to the pixel sensor substrate 11b, the interconnection layer 83b in the middle, and the wiring layer 83c of the lowermost layer closest to the silicon substrate 81. It is composed of a wiring layer 83 and an interlayer insulating film 84 formed between each wiring layer 83.

The plurality of wiring layers 83 are formed using, for example, copper (Cu), aluminum (Al), tungsten (W), and the like, and the interlayer insulating film 84 is, for example, a silicon oxide film, a silicon nitride film, or the like. Is formed by In each of the plurality of wiring layers 83 and the interlayer insulating film 84, all layers may be formed of the same material, or two or more materials may be appropriately divided and used depending on the layer.

A silicon through hole 85 penetrating through the silicon substrate 81 is formed at a predetermined position of the silicon substrate 81, and a connection conductor 87 is formed on the inner wall of the silicon through hole 85 through an insulating film 86. By embedding, a through silicon via (TSV) 88 is formed. The insulating film 86 can be formed of, for example, a SiO ₂ film or a SiN film.

On the other hand, in the silicon through-electrode 88 shown in FIG. 6, the insulating film 86 and the connecting conductor 87 are formed along the inner wall surface, and the inside of the silicon through-hole 85 is hollow, but the inner diameter is Accordingly, the entire inside of the silicon through hole 85 is sometimes buried with the connection conductor 87. In other words, even if the inside of the through hole is buried with a conductor, it may be either part of it being hollow. This also applies to the through chip via (TCV) 105 described later.

The connection conductor 87 of the through-silicon electrode 88 is connected to the rewiring 90 formed on the lower surface side of the silicon substrate 81, and the rewiring 90 is connected to the solder ball 11e. The connection conductor 87 and the rewiring 90 can be formed of, for example, copper (Cu), tungsten (W), polysilicon, or the like.

Further, on the lower surface side of the silicon substrate 81, a solder mask (solder resist) 91 is formed so as to cover the rewiring 90 and the insulating film 86 except for the region in which the solder balls 11e are formed. Has been.

On the other hand, on the pixel sensor substrate 11b, on the lower side of the semiconductor substrate 101 (hereinafter referred to as silicon substrate 101) made of silicon (Si) (on the logic substrate 11a side), a multilayer wiring layer 102 Is formed. The multilayer wiring layer 102 constitutes a pixel circuit in the pixel region 21 of FIG. 3.

The multilayer wiring layer 102 is a plurality of wiring layers composed of an uppermost wiring layer 103a closest to the silicon substrate 101, an intermediate wiring layer 103b, and a lowermost wiring layer 103c closest to the logic substrate 11a. It is composed of 103 and an interlayer insulating film 104 formed between each wiring layer 103.

Materials used as the plurality of wiring layers 103 and the interlayer insulating film 104 may be those of the same kind as those of the wiring layer 83 and the interlayer insulating film 84 described above. In addition, the fact that the plurality of wiring layers 103 or the interlayer insulating film 104 may be formed using one or two or more materials appropriately is similar to the wiring layer 83 and the interlayer insulating film 84 described above.

In the example of FIG. 6, the multilayer wiring layer 102 of the pixel sensor substrate 11b is composed of three wiring layers 103, and the multilayer wiring layer 82 of the logic substrate 11a is a four-layer wiring layer 83. ), but the total number of wiring layers is not limited to this, and can be formed with any number of layers.

In the silicon substrate 101, a photodiode 51 formed by PN bonding is formed for each pixel 32.

In addition, although not shown, the multilayer wiring layer 102 and the silicon substrate 101 include a plurality of pixel transistors such as the first transfer transistor 52 and the second transfer transistor 54, and the memory unit MEM ( 53) and the like are also formed.

At predetermined positions on the silicon substrate 101 on which the color filter 11c and the on-chip lens 11d are not formed, a through-silicon electrode 109 connected to the wiring layer 103a of the pixel sensor substrate 11b, A through-chip electrode 105 connected to the wiring layer 83a of the logic substrate 11a is formed.

The through-chip electrode 105 and the through-silicon electrode 109 are connected by a connection wiring 106 formed on the upper surface of the silicon substrate 101. Further, an insulating film 107 is formed between the silicon substrate 101 and each of the silicon through electrode 109 and the chip through electrode 105. Further, a color filter 11c and an on-chip lens 11d are formed on the upper surface of the silicon substrate 101 through a planarization film (insulating film) 108.

As described above, the solid-state imaging device 11 shown in FIG. 2 has a laminated structure in which the multilayer wiring layer 102 side of the logic substrate 11a and the multilayer wiring layer 82 side of the pixel sensor substrate 11b are bonded. have. In FIG. 6, the bonding surfaces on the side of the multilayer wiring layer 102 of the logic substrate 11a and the side of the multilayer wiring layer 82 of the pixel sensor substrate 11b are indicated by broken lines.

In addition, in the solid-state imaging element 11 of the imaging device 1, the wiring layer 103 of the pixel sensor substrate 11b and the wiring layer 83 of the logic substrate 11a are formed of a silicon penetrating electrode 109 and a chip penetrating electrode. It is connected by the two through electrodes of 105, and the wiring layer 83 of the logic board 11a and the solder ball (back electrode) 11e are connected by the silicon through electrode 88 and the rewiring 90. have. Thereby, the plane area of the imaging device 1 can be made small to the minimum.

Furthermore, by making a cavity-free structure between the solid-state imaging element 11 and the glass substrate 12, and bonding with the adhesive 13, it can also be made low in the height direction.

Therefore, according to the imaging device 1 shown in FIG. 1, a more compact semiconductor device (semiconductor package) can be realized.

With the configuration of the imaging device 1 as described above, since the IRCF 14 is installed on the solid-state imaging element 11 and the glass substrate 12, it is possible to suppress the occurrence of flare or ghost due to internal diffuse reflection of light. It becomes possible.

That is, as shown in the left part of FIG. 7, the IRCF 14 is spaced apart from the glass substrate 12 and is configured near the middle between the lens 16 and the glass substrate 12 , As indicated by a solid line, incident light is condensed and incident on the solid-state imaging device (CIS) 11 through the IRCF 14, the glass substrate 12, and the adhesive 13 at the position F0, As shown, reflected light is generated by being reflected at the position F0.

The reflected light reflected at the position F0, as indicated by the dotted line, is partially IRCF disposed at a position spaced apart from the glass substrate 12 through, for example, the adhesive 13 and the glass substrate 12 It is reflected by the rear surface (the lower surface in FIG. 7) R1 of (14), and again incident on the solid-state imaging device 11 at the position F1 through the glass substrate 12 and the adhesive 13.

In addition, the reflected light reflected from the focal point F0, as indicated by the dotted line, is another part, for example, the adhesive 13, the glass substrate 12, and the glass substrate 12 and is disposed at a spaced position. Transmitted through the IRCF 14, reflected from the upper surface (the upper surface in Fig. 7) R2 of the IRCF 14, and through the IRCF 14, the glass substrate 12, and the adhesive 13, the position ( In F2), it is incident on the solid-state image sensor 11 again.

At these positions F1 and F2, light incident again generates flare or ghost caused by internal diffuse reflection. More specifically, as shown by the image P1 in FIG. 8, in the solid-state imaging device 11, when the illumination L is imaged, it appears as a flare or ghost as indicated by the reflected lights R21 and R22. do.

On the other hand, when the IRCF 14 is configured on the glass substrate 12, like the imaging device 1 shown in the right part of FIG. 7, corresponding to the configuration of the imaging device 1 in FIG. 1, a solid line The incident light indicated by is condensed and is incident on the solid-state imaging device 11 through the IRCF 14, the adhesive 15, the glass substrate 12, and the adhesive 13 at a position F0, as indicated by the dotted line. Reflected together. Then, the reflected light is reflected by the lens surface R11 of the lowest layer on the lens group 16 through the adhesive 13, the glass substrate 12, the adhesive 15, and the IRCF 14, but the lens Since the group 16 is a position sufficiently distant from the IRCF 14, it is reflected by the solid-state image sensor 11 to a range in which light cannot be sufficiently received.

Here, the solid-state imaging element 11, the glass substrate 12, and the IRCF 14, surrounded by a dashed-dotted line in the figure, are bonded by adhesives 13 and 15 of substantially the same refractive index to be integrated and integrated. ). In the integrated configuration unit 10, by unifying the refractive index, the occurrence of internal diffuse reflection occurring at the boundary between layers of different refractive indices is suppressed, for example, a position in the vicinity of the position F0 in the left part of FIG. 7 ( Re-entry in F1, F2) is suppressed.

Thereby, when the imaging device 1 of FIG. 1 is imaged with the illumination L, as shown by the image P2 of FIG. 8, the same as the reflected light R21, R22 in the image P1, An image in which the occurrence of flare or ghost caused by internal diffuse reflection is suppressed can be captured.

As a result, with the same configuration as the imaging device 1 of the first embodiment shown in Fig. 1, the device configuration can be reduced in size and height, and the occurrence of flares and ghosts caused by internal diffuse reflection can be suppressed. have.

In addition, the image P1 in FIG. 8 is an image captured by the illumination L at night by the imaging device 1 having the configuration of the left part of FIG. 7, and the image P2 has the configuration of the right part of FIG. 7. It is an image in which the illumination L was imaged at night by the imaging device 1 (of FIG. 1).

In addition, in the above, a configuration in which the focal length can be adjusted according to the distance to the subject by moving the lens group 16 in the vertical direction in FIG. 1 by the actuator 18 and autofocus can be realized has been described as an example. The actuator 18 may not be provided, the focal length by the lens group 16 may not be adjusted, and the lens may function as a so-called single focal lens.

<2. Second embodiment>

In the first embodiment, an example in which the IRCF 14 is attached on the glass substrate 12 attached to the imaging surface side of the solid-state imaging element 11 has been described, but furthermore, the lens of the lowest layer constituting the lens group 16 May be installed on the IRCF 14.

FIG. 9 shows the lens group 16 consisting of a plurality of lenses constituting the imaging device 1 in FIG. 1, which is the lowest layer with respect to the incident direction of light, separated from the lens group 16, and the IRCF ( 14) An example of the configuration of the imaging device 1 configured on the image is shown. On the other hand, in FIG. 5, the same reference numerals are given to the configurations having the same functions as those of the configuration in FIG. 1, and description thereof is omitted as appropriate.

That is, in the imaging device 1 of FIG. 9, the difference from the imaging device 1 of FIG. 1 is from the image plane of the IRCF 14, and further, among the plurality of lenses constituting the lens group 16 This is a point where the lens 131 serving as the lowest layer with respect to the incident direction of light is separated from the lens group 16 and provided. On the other hand, the lens group 16 of FIG. 9 is given the same reference numeral as the lens group 16 of FIG. 1, but since the lens 131 serving as the lowest layer with respect to the incident direction of light is not included, strictly, It is different from the lens group 16 of Fig. 1.

With the configuration of the imaging device 1 as shown in FIG. 9, the IRCF 14 is provided on the glass substrate 12 provided on the solid-state imaging element 11, and further, the lens group 16 on the IRCF 14 Since the lens 131 of the lowest layer constituting) is provided, it becomes possible to suppress the occurrence of flare or ghost due to internal diffuse reflection of light.

That is, as shown in the left part of FIG. 10, the lens 131 serving as the lowest layer with respect to the light incident direction of the lens group 16 is provided on the glass substrate 12, and the IRCF 14 is the lens 131 When it is spaced apart from and configured near the middle between the lens group 16 and the lens 131, incident light indicated by a solid line is condensed, and the IRCF 14, the lens 131, the glass substrate 12, and the adhesive ( After entering the solid-state imaging device 11 through 13) at the position F0, it is reflected from the position F0 as indicated by the dotted line, and reflected light is generated.

The reflected light reflected at the position F0, as indicated by a dotted line, is partially separated from the lens 131 through, for example, the adhesive 13, the glass substrate 12, and the lens 131. It is reflected from the rear surface (the lower surface in Fig. 2) R31 of the IRCF 14 disposed at the position, through the lens 131, the glass substrate 12, and the adhesive 13, at the position F11, It again enters the solid-state image sensor 11.

In addition, the reflected light reflected from the focal point F0, as indicated by the dotted line, is separated from other parts, for example, the adhesive 13, the glass substrate 12, the lens 131, and the lens 131 It transmits through the IRCF 14 disposed in the designated position and is reflected from the upper surface (the upper surface in Fig. 7) R32 of the IRCF 14, the IRCF 14, the lens 131, the glass substrate 12, And, through the adhesive 13, at the position F12, it enters the solid-state imaging device 11 again.

The light incident again at these positions F11 and F12 appears as a flare or ghost in the solid-state image sensor 11. In this regard, the principle and the basic principle that occur when the reflected light R21 and R21 of the illumination L in the image P1 described with reference to FIG. 8 re-incidents at the positions F1 and F2 in FIG. 7. It is the same as that.

On the other hand, as shown in the right part of FIG. 10, similar to the configuration in the imaging device 1 of FIG. 9, when the lowest-most layer lens 131 of the lens group 16 is configured on the IRCF 14, As indicated by the solid line, incident light is condensed, and through the lens 131, IRCF 14, adhesive 15, glass substrate 12, and adhesive 13, at a position F0 of the solid-state image sensor 11 After entering, the lens group 16 at a sufficiently distant position is reflected through the adhesive 13, the glass substrate 12, the adhesive 15, the IRCF 14, and the lens 131 as indicated by the dotted line. Although reflected light is generated by the image surface R41, since the solid-state image sensor 11 is reflected to a range that cannot be substantially light-received, the occurrence of flare or ghost can be suppressed.

That is, since the solid-state imaging device 11, the adhesive 13, the glass substrate 12, and the IRCF 14 are bonded by adhesives 13 and 15 of approximately the same refractive index, they are integrated. In the integrated configuration unit 10 surrounded by a dashed-dotted line in the drawing, which is a configuration, the occurrence of internal diffuse reflection occurring at the boundary between layers of different refractive indices is suppressed by unifying the refractive index. For example, as shown in the left part of FIG. Likewise, incidence of reflected light or the like to the positions F11 and F12 near the position F0 is suppressed.

As a result, with the same configuration as the imaging device 1 of the second embodiment shown in Fig. 10, the device configuration can be reduced in size and height, and the occurrence of flare or ghost caused by internal diffuse reflection can be suppressed. have.

<3. Third embodiment>

In the second embodiment, an example in which the lens 131 of the lowest layer is provided on the IRCF 14 has been described, but the lens 131 of the lowest layer and the IRCF 14 may be bonded to each other by an adhesive.

11 shows an example of the configuration of the imaging device 1 in which the lens 131 of the lowest layer and the IRCF 14 are bonded together with an adhesive. On the other hand, in the imaging device 1 of FIG. 11, a configuration having the same function as that of the configuration of the imaging device 1 of FIG. 9 is denoted by the same reference numerals, and description thereof is omitted as appropriate.

That is, in the imaging device 1 of FIG. 11, the difference from the imaging device 1 of FIG. 9 is that the lowermost layer of the lens 131 and the IRCF 14 are transparent, that is, the adhesive 151 having substantially the same refractive index. It is a point joined by.

In the same configuration as the imaging device 1 of FIG. 11, similarly to the imaging device 1 of FIG. 9, it is possible to suppress the occurrence of flares and ghosts.

In addition, when the flatness of the lens 131 is not large, even if an attempt is made to fix it to the IRCF 14 without using the adhesive 151, the IRCF 14 may be shifted with respect to the optical axis of the lens 131, but the lens ( Since 131 and the IRCF 14 are joined by the adhesive 151, it is possible to fix the IRCF 14 so that there is no shift with respect to the optical axis of the lens 131, even if the flatness of the lens 131 is not large. It becomes possible to suppress the occurrence of distortion of the image caused by the deviation of.

<4. Fourth embodiment>

In the second embodiment, an example in which the lens 131 of the lowest layer is provided on the IRCF 14 with respect to the incident direction of light has been described, but not only the lens 131 of the lowest layer but also the lowest layer of the lens group 16 are configured. A plurality of lens groups may be provided on the IRCF 14.

12 shows an example of the configuration of the imaging device 1 in which a lens group consisting of a plurality of lenses constituting the lowest layer in the incident direction of the lens group 16 is configured on the IRCF 14. On the other hand, in the imaging device 1 of FIG. 12, the same reference numerals are assigned to the configurations having the same functions as the configuration of the imaging device 1 of FIG. 9, and description thereof is omitted as appropriate.

That is, in the imaging device 1 of FIG. 12, the difference from the imaging device 1 of FIG. 9 is that instead of the lens 131, a plurality of the lowermost layers constituting the light incidence direction of the lens group 16 This is a point where a lens group 171 made of lenses is provided on the IRCF 14. On the other hand, in Fig. 12, an example of the lens group 171 comprising two lenses is shown, but the lens group 171 may be constituted by a larger number of lenses.

Also in such a structure, similarly to the imaging device 1 of FIG. 9, it becomes possible to suppress the occurrence of flares and ghosts.

In addition, since the lens group 171 comprising a plurality of lenses constituting the lowest layer among the plurality of lenses constituting the lens group 16 is configured on the IRCF 14, the number of lenses constituting the lens group 16 Since the reduction can be achieved and the lens group 16 can be reduced in weight, it becomes possible to reduce the driving capability of the actuator 18 used for autofocus, thereby realizing the miniaturization and power reduction of the actuator 18. .

On the other hand, the lens 131 in the imaging device 1 of FIG. 11 of the third embodiment may be replaced with a lens group 171 and may be attached to the IRCF 14 with a transparent adhesive 151.

<5. 5th embodiment>

In the second embodiment, in the example of attaching the glass substrate 12 on the solid-state imaging device 11 with the adhesive 13 and attaching the IRCF 14 on the glass substrate 12 with the adhesive 15 Although it has been described, the glass substrate 12, the adhesive 15, and the IRCF 14 are replaced with a structure that combines the functions of the glass substrate 12 and the IRCF 14, and the adhesive 13 You may make it attach on the imaging element 11.

13 shows a glass substrate 12, an adhesive 15, and an IRCF 14 replaced with a configuration having the functions of the glass substrate 12 and the IRCF 14, and solid-state imaging with the adhesive 13 An example of the configuration of the imaging device 1 in which the lens 131 of the lowermost layer is attached to the element 11 and is provided thereon is shown. On the other hand, in the imaging device 1 of FIG. 13, the same reference numerals are given to the configurations having the same functions as the configuration of the imaging device 1 of FIG. 9, and descriptions thereof are omitted as appropriate.

That is, in the imaging device 1 of FIG. 13, the difference from the imaging device 1 of FIG. 9 is the glass substrate 12 and the IRCF 14, the function of the glass substrate 12 and the IRCF 14 Substitute the IRCF glass substrate 14' having the function of, and attach it on the solid-state imaging device 11 by the adhesive 13, and further, to install the lowest layer of the lens 131 on the IRCF 14'. That is one point.

Also in such a structure, similarly to the imaging device 1 of FIG. 9, it becomes possible to suppress the occurrence of flares and ghosts.

That is, at present, in order to reduce the size of the solid-state imaging device 11, the glass substrate 12 referred to as a CSP (Chip Size Package) structure and the solid-state imaging device 11 are adhered, and the glass substrate is a base substrate. As a result, by processing the solid-state imaging device 11 thin, it is possible to realize a small-sized solid-state imaging device. In Fig. 13, the IRCF glass substrate 14' realizes a height reduction by realizing the function of the IRCF 14 as well as the glass substrate 12 with high flatness.

On the other hand, the glass substrate 12, the adhesive 15, and the IRCF in the imaging device 1 of FIGS. 1, 11 and 12 which are 1st Embodiment, 3rd Embodiment, and 4th Embodiment (14) may be substituted with the IRCF glass substrate 14' having the function of the glass substrate 12 and the function of the IRCF 14.

<6. 6th embodiment>

In the fourth embodiment, the glass substrate 12 is attached to the solid-state imaging device 11 of the CSP structure with the adhesive 13, and further, the IRCF 14 is applied on the glass substrate 12 by the adhesive 15. In addition, an example in which a lens group 171 consisting of a plurality of lenses of the lowest layer among a plurality of lenses constituting the lens group 16 is installed on the IRCF 14 has been described, but solid-state imaging of a CSP structure Instead of the element 11, the solid-state imaging element 11 having a chip on board (COB) structure may be used.

Fig. 14 shows the glass substrate 12 and the IRCF 14 in the imaging device 1 of Fig. 12, and the IRCF glass substrate 14' having the function of the glass substrate 12 and the function of the IRCF 14. A configuration example in which the solid-state imaging device 91 of the COB (Chip on Board) structure is used instead of the solid-state imaging device 11 of the CSP structure is shown. On the other hand, in the imaging device 1 of FIG. 14, the same reference numerals are assigned to the configurations having the same functions as the configuration of the imaging device 1 of FIG. 12, and descriptions thereof are omitted as appropriate.

That is, in the imaging device 1 of FIG. 14, the difference from the imaging device 1 of FIG. 12 is the glass substrate 12 and the IRCF 14, the function of the glass substrate 12 and the IRCF 14 It is replaced with the IRCF glass substrate 14' having the function of, and instead of the solid-state imaging device 11 of the CSP structure, the solid-state imaging device 91 of the chip on board (COB) structure is used.

Also in such a configuration, similarly to the imaging device 1 of FIG. 12, it becomes possible to suppress the occurrence of flares and ghosts.

In addition, in recent years, a CSP structure is generally used for miniaturization of the solid-state imaging device 11 along with the miniaturization of the imaging device 1, but the CSP structure is bonded to the glass substrate 12 or the IRCF glass substrate 14'. However, since processing such as wiring the terminal of the solid-state imaging device 11 to the back side of the light-receiving surface becomes complicated, it is expensive compared to the solid-state imaging device 11 having a COB structure. Accordingly, not only the CSP structure, but also the solid-state imaging device 91 having a COB structure connected to the circuit board 17 by a wire bond 92 or the like may be used.

By using the solid-state imaging element 91 of the COB structure, the connection to the circuit board 17 can be made easy, so it becomes possible to simplify the processing and reduce the cost.

On the other hand, the solid-state imaging element 11 of the CSP structure in the imaging device 1 of FIGS. 1, 9, 11, and 13, which is the first to third embodiments, and the fifth embodiment, is a COB It may be changed to the solid-state image sensor 11 having a (Chip on Board) structure.

<7. Seventh embodiment>

In the second embodiment, an example in which the glass substrate 12 is provided on the solid-state imaging device 11 and further, the IRCF 14 is provided on the glass substrate has been described, but on the solid-state imaging device 11 The IRCF 14 may be provided, and further, the glass substrate 12 may be provided on the IRCF 14.

FIG. 15 is a case in which the glass substrate 12 is used, in which the IRCF 14 is provided on the solid-state imaging element 11, and further, the glass substrate 12 is provided on the IRCF 14. The configuration example of (1) is shown.

In the imaging device 1 of FIG. 15, the difference from the imaging device 1 of FIG. 9 is that the glass substrate 12 and the IRCF 14 are interchanged, and the solid-state imaging device 11 is formed by using a transparent adhesive 13. ) On the IRCF 14, and further, the glass substrate 12 on the IRCF 14 with a transparent adhesive 15, and the lens 131 on the glass substrate 12 That is what I did.

Also in such a structure, similarly to the imaging device 1 of FIG. 9, it becomes possible to suppress the occurrence of flares and ghosts.

In addition, the IRCF 14 generally has low flatness due to the influence of temperature or disturbance due to its characteristics, and there is a concern that distortion may occur in the image on the solid-state image sensor 11.

Accordingly, it is common to apply a coating material or the like on both sides of the IRCF 14 to employ a special material designed to retain flatness, but this increases the cost.

In contrast, in the imaging device 1 of Fig. 15, it is possible to secure flatness at low cost by sandwiching the IRCF 14 having low flatness between the solid-state imaging element 11 and the glass substrate 12 having high flatness. Thus, it becomes possible to reduce the distortion of the image.

Therefore, with the imaging device 1 of FIG. 15, it becomes possible to suppress the occurrence of flares and ghosts, and to suppress distortion of an image caused by the characteristics of the IRCF 14. Further, since a coating made of a special material designed to retain flatness is not required, it becomes possible to reduce the cost.

On the other hand, also in the imaging device 1 of FIGS. 1, 11, and 12 as the first embodiment, the third embodiment, and the fourth embodiment, the glass substrate 12 and the IRCF 14 are interchanged with an adhesive ( 13, 15) may be applied.

<8. Eighth embodiment>

In the first embodiment, an example in which the IRCF 14 is used as a configuration for blocking infrared light has been described, but a configuration other than the IRCF 14 may be used as long as it is a configuration capable of blocking infrared light, for example, Instead of the IRCF 14, an infrared ray blocking resin may be applied and used.

16 is an example of the configuration of the imaging device 1 in which an infrared ray blocking resin is used instead of the IRCF 14. On the other hand, in the imaging device 1 of FIG. 16, the same reference numerals are assigned to the configurations having the same functions as those of the imaging device 1 of FIG. 1, and description thereof will be omitted as appropriate.

That is, in the imaging device 1 of FIG. 16, the difference from the imaging device 1 of FIG. 1 is that the infrared light blocking resin 211 is formed instead of the IRCF 14. The infrared light blocking resin 211 is formed by applying, for example.

Also in such a structure, similarly to the imaging device 1 of FIG. 1, it becomes possible to suppress the occurrence of flares and ghosts.

In addition, in recent years, improvement of the resin has been progressed, and it has become common to have an infrared ray blocking effect, and the infrared ray blocking resin 211 is applied to the glass substrate 12 during the production of the CSP-type solid-state imaging device 11 It is known that it can be done.

On the other hand, in place of the IRCF 14 in the imaging device 1 of FIGS. 9, 11, 12, and 15, which is the second to fourth embodiments and the seventh embodiment, an infrared light blocking resin (211) may be used.

<9. 9th embodiment>

In the second embodiment, when the glass substrate 12 is used, an example in which the flat plate is installed in close contact with the solid-state imaging device 11 without cavities, etc. has been described, but the glass substrate 12 and the solid-state imaging device A cavity (cavity) may be provided between the elements 11.

17 shows an example of the configuration of the imaging device 1 in which a cavity (cavity) is provided between the glass substrate 12 and the solid-state imaging element 11. In the imaging device 1 of FIG. 17, the same reference numerals are assigned to the configurations having the same functions as the configuration of the imaging device 1 of FIG. 9, and descriptions thereof are omitted as appropriate.

That is, in the imaging device 1 of FIG. 17, the difference from the imaging device of FIG. 9 is that instead of the glass substrate 12, a glass substrate 231 having a convex portion 231a is provided around it. Point. The surrounding convex portion 231a is in contact with the solid-state imaging element 11, and the convex portion 231a is adhered by a transparent adhesive 232, so that between the imaging surface of the solid-state imaging element 11 and the glass substrate 231 A cavity (cavity) 231b made of an air layer is formed.

Also in such a structure, similarly to the imaging device 1 of FIG. 9, it becomes possible to suppress the occurrence of flares and ghosts.

On the other hand, instead of the glass substrate 12 in the imaging device 1 of FIGS. 1, 11, 12, and 16, which is the first embodiment, the third embodiment, the fourth embodiment, and the eighth embodiment In addition, the glass substrate 231 may be used so that only the convex portion 231a is adhered by the adhesive 232 to form a cavity (cavity) 231b.

<10. 10th embodiment>

In the second embodiment, the lens 131 of the lowest layer of the lens group 16 is configured on the IRCF 14 provided on the glass substrate 12, but instead of the IRCF 14 on the glass substrate 12 It may be constituted by a coating agent for an organic multilayer film having an infrared light blocking function.

Fig. 18 shows an example of the configuration of the imaging device 1 made to be composed of a coating agent of an organic multilayer film having an infrared light blocking function instead of the IRCF 14 on the glass substrate 12.

In the imaging device 1 of FIG. 18, the difference from the imaging device 1 of FIG. 9 is that instead of the IRCF 14 on the glass substrate 12, the coating agent 251 of an organic multilayer film having an infrared light blocking function It is a point to be constructed by.

Also in such a structure, similarly to the imaging device 1 of FIG. 9, it becomes possible to suppress the occurrence of flares and ghosts.

On the other hand, in the first, third, fourth, seventh, and ninth embodiments, the imaging device 1 of FIGS. 1, 6, 7, 10, and 12 In place of the IRCF 14 in the above, a coating agent 251 of an organic multilayer film having an infrared light blocking function may be used.

<11. 11th embodiment>

In the tenth embodiment, instead of the IRCF 14 on the glass substrate 12, the lowermost layer of the lens 131 of the lens group 16 is provided on the coating agent 251 of the organic multilayer film having an infrared light blocking function. Although an example has been described, further, an AR (Anti Reflection) coating may be applied to the lens 131.

FIG. 19 shows a configuration example of the imaging device 1 in which the lens 131 in the imaging device 1 in FIG. 13 is subjected to AR coating.

That is, in the imaging device 1 of FIG. 19, the difference from the imaging device 1 of FIG. 18 is that instead of the lens 131, the lens of the lowest layer of the lens group 16 is formed with an AR coating 271a. This is the point where (271) is installed. The AR coating 271a may employ, for example, vacuum deposition, sputtering, or WET coating.

Also in such a structure, similarly to the imaging device 1 of FIG. 9, it becomes possible to suppress the occurrence of flares and ghosts.

Further, since the AR coating 271a of the lens 271 suppresses internal diffuse reflection of the reflected light from the solid-state image sensor 11, it becomes possible to suppress the occurrence of flares and ghosts with higher precision.

On the other hand, the second, third, fifth, seventh, ninth, and tenth embodiments, which are Figs. 9, 11, 13, 15, 17, and 17. Instead of the lens 131 in the imaging device 1 of 18, the lens 271 coated with the AR coating 271a may be used. In addition, AR coating similar to the AR coating 271a on the surface (the uppermost surface in the drawing) of the lens group 171 in the imaging device 1 of FIGS. 12 and 14, which is the fourth and sixth embodiments. You may do it.

It is preferable that the AR coating 271a is a single layer or a multilayer structure film of the following film. That is, the AR coating 271a is an insulating film containing as a main component, for example, a transparent silicone resin, acrylic resin, epoxy resin, styrene resin, Si (silicon), C (carbon), and H (hydrogen). For example, at least one of SiCH, SiCOH, SiCNH), Si (silicon), N (nitrogen)-based insulating film (e.g., SiON, SiN), silicon hydroxide, alkyl silane, alkoxy silane, polysiloxane, etc. SiO ₂ film, P-SiO film, HDP-SiO film, etc. formed by using a material gas and an oxidizing agent.

<12. 12th embodiment>

In the eleventh embodiment, instead of the lens 131, an example in which the lens 271 coated with an AR (Anti Reflection) coating 271a is used has been described, but if the antireflection function can be realized, other than AR coating The structure of may be used, for example, it may be made into a moth eye structure, which is a minute uneven structure that prevents reflection.

FIG. 20 shows an example of the configuration of the imaging device 1 in which a lens 291 to which an anti-reflection function of a Morse eye structure is added is provided instead of the lens 131 in the imaging device 1 of FIG. 19 have.

That is, in the imaging device 1 of FIG. 20, the difference from the imaging device 1 of FIG. 18 is that instead of the lens 131, the anti-reflection processing unit 291a, which has been subjected to processing to form a Morse eye structure, is provided. This is the point where the lens 291 of the lowermost layer of the lens group 16 is provided.

Also in such a configuration, similarly to the imaging device 1 of FIG. 18, it becomes possible to suppress the occurrence of flares and ghosts.

In addition, internal diffuse reflection of the reflected light from the solid-state image sensor 11 is suppressed by the anti-reflection processing unit 291a on which the lens 291 has been treated to have a Morse eye structure, so that flare and ghost are reduced with higher precision. It becomes possible to suppress occurrence. On the other hand, the antireflection processing unit 291a may have been subjected to antireflection treatment other than the Morse Eye structure, as long as the antireflection function can be realized.

It is preferable that the antireflection processing part 291a is a single layer or a multilayer structure film of the following film. That is, the anti-reflection treatment unit 291a is an insulating film containing, for example, a transparent silicone resin, acrylic resin, epoxy resin, styrene resin, Si (silicon), C (carbon), and H (hydrogen) as main components. (E.g., SiCH, SiCOH, SiCNH), Si (silicon), N (nitrogen) as a main component insulating film (e.g., SiON, SiN), silicon hydroxide, alkyl silane, alkoxy silane, at least any of polysiloxane, etc. These are SiO ₂ films, P-SiO films, HDP-SiO films, and the like formed by using one material gas and an oxidizing agent.

On the other hand, the second, third, fifth, seventh, ninth, and tenth embodiments, which are Figs. 9, 11, 13, 15, 17, and 17. Instead of the lens 131 in the imaging device 1 of 18, the lens 291 to which the anti-reflection processing unit 291a is attached may be used. In addition, even if the surface of the lens group 171 in the imaging device 1 of Figs. 12 and 14, which is the fourth and sixth embodiments, is subjected to antireflection treatment similar to that of the antireflection treatment unit 291a. do.

<13. 13th embodiment>

In the fourth embodiment, an example in which the lowermost layer of the lens 131 of the lens group 16 is installed on the IRCF 14 has been described, but the configuration has an infrared light blocking function and functions similar to those of the lowermost layer of the lens 131 It may be substituted with.

FIG. 21 is the same as the infrared light blocking function and the lens of the lowest layer of the lens group 16 instead of the IRCF 14 and the lens 131 of the lowest layer of the lens group 16 in the imaging device 1 of FIG. 9 A configuration example of the imaging device 1 in which an infrared light blocking lens having the function of is provided is shown.

That is, in the imaging device 1 of FIG. 21, the difference from the imaging device 1 of FIG. 9 is that instead of the lens 131 of the lowest layer of the IRCF 14 and the lens group 16, the infrared light blocking function This is the point in which the infrared light blocking lens 301 is installed.

Also in such a structure, similarly to the imaging device 1 of FIG. 9, it becomes possible to suppress the occurrence of flares and ghosts.

In addition, since the infrared light blocking lens 301 has both an infrared light blocking function and a function as the lowest layer lens 131 of the lens group 16, it is necessary to install the IRCF 14 and the lens 131 separately. Because there is no, it becomes possible to further downsize and reduce the height of the device configuration of the imaging device 1. In addition, instead of the lens group 171 and the IRCF 14 in the imaging device 1 of FIG. 12, which is the fourth embodiment, an infrared light blocking function and a plurality of lenses in the lowest layer of the lens group 16 are used. It may be substituted with an infrared ray blocking lens that has a function as the lens group 171.

<14. Fourteenth embodiment>

It is known that stray light easily enters from the peripheral edge of the light-receiving surface of the solid-state image sensor 11. Accordingly, a black mask may be provided at the periphery of the light-receiving surface of the solid-state image sensor 11 to suppress the intrusion of stray light, thereby suppressing the occurrence of flares or ghosts.

The left part of FIG. 22 is a glass substrate provided with a black mask 321a for shielding light from the peripheral edge of the light-receiving surface of the solid-state imaging device 11 in place of the glass substrate 12 in the imaging device 1 of FIG. 18 An example of the configuration of the imaging device 1 in which 321 is provided is shown.

That is, in the imaging device 1 in the left part of FIG. 22, the difference from the imaging device 1 in FIG. 18 is, instead of the glass substrate 12, as shown in the right part of FIG. This is a point where a glass substrate 321 provided with a black mask 321a made of a light-shielding film is provided on Z2). The black mask 321a is installed on the glass substrate 321 by photolithography or the like. On the other hand, in the center Z1 of the glass substrate 321 in the right part of FIG. 22, a black mask is not provided.

Also in such a structure, similarly to the imaging device 1 of FIG. 9, it becomes possible to suppress the occurrence of flares and ghosts.

In addition, since the black mask 321a is provided on the peripheral edge portion Z2 of the glass substrate 321, the intrusion of stray light from the peripheral edge portion can be suppressed, thereby preventing the occurrence of flare or ghost caused by the stray light. It becomes possible to suppress it.

On the other hand, for the black mask 321a, as long as stray light can be prevented from entering not only the glass substrate 321 but also the solid-state imaging device 11, it may be installed in other configurations, for example, an infrared light blocking function. It may be installed on the coating agent 251 or the lens 131 of an organic multilayer film having, IRCF 14, IRCF glass substrate 14', glass substrate 231, lens group 171, lenses 271, 291 ), infrared light blocking resin 211, infrared light blocking lens 301, or the like. Further, in this case, when it is difficult to install a black mask by photolithography because the flatness of the surface is low, for example, a black mask may be provided on a surface having low flatness by ink jet.

As described above, according to the present disclosure, it becomes possible to reduce flare and ghost caused by internal diffuse reflection of light from the solid-state image pickup device due to downsizing, and without deteriorating the performance of the image pickup device, high pixel, high-definition, and It becomes possible to realize downsizing.

<15. 15th embodiment>

In the above, the examples in which the lenses 131, 271, 291, the lens group 171, or the infrared light blocking lens 301 are adhered or attached to the square-shaped solid-state imaging device 11 Explained.

However, when any one of the square-shaped lenses 131, 271, 291, lens group 171, and infrared light blocking lens 301 is adhered or attached to the solid-state imaging device 11 of approximately the same size, The vicinity of the corner portion is liable to peel off, and the incident light does not enter the solid-state image sensor 11 properly due to peeling of the corner portion of the lens 131, and there is a fear that flare or ghost may occur.

Accordingly, when any one of the rectangular-shaped lenses 131, 271, and 291, the lens group 171, and the infrared light blocking lens 301 is adhered to or attached to the solid-state imaging device 11, the solid-state imaging device ( By setting the external dimension smaller than the external dimension of 11) and further setting the effective area near the center of the lens and setting the non-effective area on the outer circumference, it is effective even if it is difficult to peel off or the end is slightly peeled off. You may make it possible to condense incident light.

That is, when the lens 131 is adhered to or attached to the glass substrate 12 installed on the solid-state imaging device 11, for example, as shown in FIG. 23, the external dimension of the lens 131 is It is made smaller than the glass substrate 12 on the imaging element 11, and the non-effective area 131b is set in the outer peripheral part of the lens 131, and the effective area 131a is set inside it. On the other hand, on the solid-state imaging element 11, you may make it install the glass substrate 231 instead of the glass substrate 12.

In the configuration of FIG. 23, the IRCF 14 and the adhesive 15 in the integrated configuration unit 10 of the imaging device 1 in FIG. 9 are omitted, but are omitted for convenience of explanation. Of course, it may be installed between the lens 131 and the glass substrate 12.

Further, the effective region 131a is an aspherical area among the areas in which the incident light of the lens 131 is incident, and effectively functions to condense the incident light to a photoelectric conversion region of the solid-state imaging device 11. In other words, the effective region 131a is a concentric circle-shaped structure in which an aspherical lens structure is formed, is a region circumscribed to the outer peripheral portion of the lens, and is a region for condensing incident light onto an imaging surface capable of photoelectric conversion of the solid-state imaging element 11.

On the other hand, the non-effective region 131b is a region that does not function as a lens for condensing incident light incident on the lens 131 to a region to be photoelectrically converted in the solid-state image sensor 11.

However, in the non-effective region 131b, it is preferable to have a structure in which a structure functioning as a partially aspherical lens is extended at the boundary with the effective region 131a. In this way, the structure functioning as a lens is provided as the non-effective region 131b extending near the boundary with the effective region 131a, so that the lens 131 is attached to the glass substrate 12 on the solid-state image sensor 11 Even if a positional shift occurs when adhering or adhering, it becomes possible to appropriately condense incident light onto the imaging surface of the solid-state imaging element 11.

On the other hand, in FIG. 23, the size of the glass substrate 12 on the solid-state imaging device 11 is the height (Vs) in the vertical direction (Y direction) × the width (Hs) in the horizontal direction (X direction), and the solid-state imaging device ( 11) On the inside of the glass substrate 12, a lens 131 having a size smaller than the solid-state imaging element 11 (glass substrate 12) and having a size of height (Vn) in the vertical direction x width (Hn) in the horizontal direction. ) Is glued or attached to the central part. Further, on the outer periphery of the lens 131, an ineffective area 131b that does not function as a lens is set, and an effective area having a size of the height Ve in the vertical direction × the width He in the horizontal direction ( 131a) is set.

In other words, in any of the width in the horizontal direction and the height in the vertical direction, the width and length of the effective area 131a of the lens 131 <the width and length of the ineffective area 131b <solid-state imaging device 11 ( It is a relationship between the width and length of the external size of the glass substrate 12 thereon, and the center positions of the lenses 131, the effective regions 131a, and the non-effective regions 131b are approximately the same.

In Fig. 23, a top view seen from the side of the light incident direction when the lens 131 is adhered or attached to the glass substrate 12 on the solid-state imaging device 11 on the upper part of the drawing is shown. An external perspective view when the lens 131 is adhered or attached to the glass substrate 12 on the solid-state imaging device 11 is shown below.

Further, in the lower right part of the figure of FIG. 23, the side surface and glass of the lens 131 at the end of the external perspective view when the lens 131 is adhered or attached to the glass substrate 12 on the solid-state image sensor 11 The boundary B1 with the substrate 12, the boundary B2 outside the invalid region 131b, and the boundary B3 between the outside of the valid region 131a and the inside of the invalid region 131b are shown. Is turned off.

Here, in FIG. 23, an example in which the side end portion of the lens 131 is perpendicular to the glass substrate 12 on the solid-state image sensor 11 is shown. Accordingly, in the top view of FIG. 23, the outer boundary B2 of the ineffective region 131b is formed on the upper surface of the lens 131, and the boundary B1 between the effective region 131a and the ineffective region 131b Since is formed on the lower surface of the lens 131, it has the same size. Thereby, in the upper part of FIG. 23, the outer peripheral part (boundary B1) of the lens 131 and the outer peripheral part (boundary B2) of the non-effective region 131b are expressed as the same external shape.

Due to this configuration, a space is created between the side surface that becomes the outer circumference of the lens 131 and the outer circumference of the glass substrate 12 on the solid-state imaging device 11, so that interference between the side surface of the lens 131 and other objects It becomes possible to suppress and it becomes possible to make it a structure which is difficult to peel off from the glass substrate 12 on the solid-state image sensor 11.

In addition, since the effective region 131a of the lens 131 is set in the non-effective region 131b, it becomes possible to appropriately condense incident light on the imaging surface of the solid-state imaging element 11 even if the peripheral portion is slightly peeled off. Further, when peeling of the lens 131 occurs, interfacial reflection increases and flare and ghost deteriorate. Therefore, by suppressing peeling, it becomes possible to suppress the occurrence of flare and ghost.

Further, in FIG. 23, an example in which the lens 131 is adhered to or adhered to the glass substrate 12 on the solid-state imaging device 11 has been described, but of course, the lenses 271 and 291, and the lens group 171 , And the infrared light blocking lens 301 may be used.

<Modification example of external shape of lens>

In the above, the effective area 131a is set at the center of the lens 131, the ineffective area 131b is set at the outer periphery thereof, and further, the effective area 131a is the solid-state imaging device 11 (above it). As an example in which the size is smaller than the outer circumferential size of the glass substrate 12), an example in which all four corners of the external shape of the lens 131 are formed by acute angles has been described.

However, the size of the lens 131 is set to be smaller than the size of the solid-state imaging device 11 (glass substrate 12 thereon), and an effective area 131a is set at the center of the lens 131, and the outer circumference thereof When the ineffective region 131b is set to, the external shape may be any other shape.

That is, as shown in the upper left part of Fig. 24 (corresponding to Fig. 23), the four corner regions Z301 in the external shape of the lens 131 may be configured to have an acute angle shape. In addition, as shown to the lens 131' in the upper right part of FIG. 24, the area|region Z302 of the four corners may have a polygonal shape which consists of an obtuse angle.

In addition, as shown to the lens 131" in the left-middle part of Fig. 24, the four corner regions Z303 in the external shape may have a circular shape.

Further, as shown in the lens 131"' in the right middle portion of Fig. 24, the four corner regions Z304 in the external shape may have a shape in which a small square portion protrudes from the four corners. One shape may be a shape other than a square, for example, a shape such as a circle, an ellipse, or a polygon.

Further, as shown in the lower left lens 131"" in Fig. 24, the four corner regions Z305 in the external shape may be concave in a rectangular shape.

Further, as shown in the lower right lens 131""' in Fig. 24, the effective area 131a may be made into a square shape, and the outer peripheral portion of the ineffective area 131b may be made into a circular shape.

That is, the corner portion of the lens 131 becomes more likely to be peeled off from the glass substrate 12 as the acute angle increases, and there is a fear that the lens 131 has an adverse effect optically. Thus, as shown in the lenses 131' to 131""' in Fig. 24, by making the corner part a polygonal shape that is obtuse than 90 degrees, a round shape, a concave part, a convex part, etc., the lens ( By making the structure 131 difficult to peel off from the glass substrate 12, it becomes possible to reduce the risk of adversely affecting optically.

<Modified example of the structure of the end of the lens>

In the above, an example in which the end of the lens 131 is formed perpendicular to the imaging surface of the solid-state imaging device 11 has been described. However, if the size of the lens 131 is set to be smaller than the size of the solid-state imaging device 11, the effective area 131a is set in the center of the lens 131, and the ineffective area 131b is set in the outer circumference thereof And may be formed in other shapes.

That is, as shown in the upper left part of Fig. 25, the same configuration as the effective region 131a as an aspherical lens is extended at the boundary with the effective region 131a in the non-effective region 131b, and is not effective. As shown in the end portion Z331 of the region 131b, the end portion may be formed vertically (corresponding to the configuration in Fig. 23).

In addition, as shown in the second upper part from the left of Fig. 25, the same configuration as the effective region 131a as an aspherical lens extends at the boundary between the effective region 131a in the non-effective region 131b. Alternatively, as shown in the end portion Z332 of the ineffective region 131b, the end portion may be formed in a tapered shape.

Further, as shown in the third upper part from the left in Fig. 25, the same configuration as the effective region 131a as an aspherical lens extends at the boundary between the effective region 131a in the non-effective region 131b. Alternatively, as shown in the end portion Z333 of the ineffective region 131b, the end portion may be formed in a round shape.

In addition, as shown in the upper right part of Fig. 25, the same configuration as the effective area 131a as an aspherical lens is extended at the boundary between the effective area 131a in the non-effective area 131b, and is not effective. As shown in the end portion Z334 of the region 131b, the end portion may be formed as a side surface of a multistage structure.

Further, as shown in the lower left of Fig. 25, at the boundary between the effective area 131a in the non-effective area 131b, the same configuration as the effective area 131a as an aspherical lens is extended, and As shown in the end portion Z335 of the region 131b, the end portion has a flat portion in the horizontal direction, and a weir-shaped protrusion protruding from the effective region 131a in a direction opposite to the incident direction of the incident light is formed. May be formed vertically.

In addition, as shown in the second lower part from the left in Fig. 25, the same configuration as the effective region 131a as an aspherical lens extends at the boundary between the effective region 131a in the non-effective region 131b. And, as shown in the end portion Z336 of the ineffective region 131b, a flat portion in the horizontal direction is provided at the end portion, and a weir-shaped protrusion protruding from the effective region 131a in a direction opposite to the incident direction of the incident light After being formed, the side surface of the protrusion may be formed in a tapered shape.

Further, as shown in the third lower part from the left in Fig. 25, the same configuration as the effective region 131a as an aspherical lens extends at the boundary between the effective region 131a in the non-effective region 131b. As shown in the end portion Z337 of the ineffective region 131b, a flat portion in the horizontal direction is provided at the end portion, and a weir-shaped protrusion protruding from the effective region 131a in a direction opposite to the incident direction of the incident light After being formed, the side surfaces of the protrusions may be formed in a round shape.

In addition, as shown in the lower right of Fig. 25, the same configuration as the effective region 131a as an aspherical lens is extended at the boundary between the effective region 131a in the non-effective region 131b, and is not effective. As shown in the end portion Z338 of the region 131b, the end portion has a flat portion in the horizontal direction, and a weir-shaped protrusion protruding from the effective region 131a in a direction opposite to the incident direction of the incident light is formed. The side surface of may be formed in a multistage structure.

On the other hand, at the upper end of FIG. 25, a planar portion in a horizontal direction is provided at the end of the lens 131, and a weir-shaped protrusion protruding in a direction opposite to the incident direction of the incident light than the effective area 131a is not provided. An example is shown, and a structural example in which a protrusion having a flat portion in a horizontal direction is not provided at an end portion of the lens 131 is shown. In addition, the upper and lower ends of FIG. 25 are, in turn, from the left side, an example in which the end of the lens 131 is formed perpendicular to the glass substrate 12, an example in which the end is configured in a tapered shape, an example in which the end is configured in a round shape, And an example in which a plurality of side surfaces are configured in multiple stages is shown.

In addition, as shown in the upper part of Fig. 26, the same configuration as the effective region 131a as an aspherical lens is extended at the boundary between the effective region 131a in the non-effective region 131b, and the non-effective region As shown in the end portion Z351 of (131b), the protrusion is formed perpendicular to the glass substrate 12, and further, a rectangular boundary structure at the boundary with the glass substrate 12 on the solid-state imaging device 11 You may configure it to leave (Es).

Further, as shown in the lower part of Fig. 26, at the boundary between the effective area 131a in the non-effective area 131b, the same configuration as the effective area 131a as an aspherical lens is extended, and the ineffective area As shown in the end portion Z352 of (131b), the protrusion is formed perpendicular to the glass substrate 12, and further, the boundary structure of a round shape at the boundary with the glass substrate 12 on the solid-state imaging device 11 ( Er) may be left behind.

Regarding the rectangular border structure Es and the round border structure Er, by increasing the contact area between the lens 131 and the glass substrate 12, the lens 131 and the glass substrate 12 ) Can be brought into close contact with each other, and as a result, it becomes possible to suppress peeling of the lens 131 from the glass substrate 12.

On the other hand, for the rectangular-shaped boundary structure (Es) and the round-shaped boundary structure (Er), it is used in any case where the end is formed in a tapered shape, in a case where it is formed in a round shape, and in a case where it is formed in a multistage structure. You can do it.

In addition, as shown in Fig. 27, the same configuration as the effective region 131a as an aspherical lens is extended at the boundary with the effective region 131a in the non-effective region 131b, and the non-effective region 131b ), the side surface of the lens 131 is formed perpendicular to the glass substrate 12, and further, on the glass substrate 12 at the outer circumference thereof, at approximately the same height as the lens 131 The refractive film 351 having a predetermined refractive index may be formed.

Thus, for example, when the refractive layer 351 has a refractive index higher than a predetermined refractive index, when there is incident light from the outer periphery of the lens 131 as indicated by the solid arrow at the top of FIG. 27, the lens 131 ) Is reflected outward, and incident light to the side surface of the lens 131 is reduced as indicated by the dotted arrow. As a result, since the intrusion of stray light into the lens 131 is suppressed, the occurrence of flare or ghost is suppressed.

In addition, when the refractive layer 351 has a refractive index lower than a predetermined refractive index, as indicated by the solid arrow at the bottom of FIG. 27, it does not enter the incident surface of the solid-state imaging device 11, but from the side surface of the lens 131. The light to be transmitted outside the lens 131 is transmitted, and reflected light from the side surface of the lens 131 is reduced as indicated by the dotted arrow. As a result, since the intrusion of stray light into the lens 131 is suppressed, it becomes possible to suppress the occurrence of flares and ghosts.

Further, in FIG. 27, an example in which the refractive film 351 has the same height as the lens 131 on the glass substrate 12 and the end portion is formed vertically has been described, but may have a shape other than that.

For example, as shown in the upper left region Z391 in FIG. 28, the refractive film 351 has a tapered shape formed at the end of the glass substrate 12 and is higher than the height of the end of the lens 131. It may be configured to have a thickness.

In addition, for example, as shown in the upper center region Z392 of FIG. 28, the refractive film 351 has a tapered shape at the end and has a thickness higher than the height of the end of the lens 131. The excitation configuration may be employed, and further, a configuration may be employed such that a part of the lens 131 overlaps the non-effective region 131b.

Further, for example, as shown in the upper right region Z393 of FIG. 28, the refractive film 351 is formed in a tapered shape from the height of the end of the lens 131 to the end of the glass substrate 12. It may be configured.

Further, for example, as shown in the lower left region Z394 in FIG. 28, the refractive film 351 has a tapered shape formed at the end of the glass substrate 12 and the height of the end of the lens 131 A configuration having a lower thickness may be used.

Further, for example, as shown in the lower right region Z395 of FIG. 28, the refractive film 351 is concave and rounded toward the glass substrate 12 from the height of the end of the lens 131. It may be a configuration to be formed.

In any of the configurations in Figs. 27 and 28, since the intrusion of stray light into the lens 131 is suppressed, it becomes possible to suppress the occurrence of flares and ghosts.

<16. 16th embodiment>

In the above, an example of reducing flare and ghost by making the lens 131 difficult to peel off from the glass substrate 12 or having a structure that suppresses the intrusion of stray light has been described, but the adhesive generated during processing Flare and ghost may be reduced by setting it as the structure which suppresses the burr.

That is, in the case of a configuration in which the IRCF 14 is formed on the solid-state imaging element 11 and the glass substrate 12 is adhered to the IRCF 14 by an adhesive 15 as shown at the top of FIG. 29 Consider (for example, in the case of the configuration of the seventh embodiment in Fig. 15). On the other hand, the configuration in FIG. 29 corresponds to a configuration other than a lens in the integrated configuration unit 10 in the imaging device 1 in FIG. 15.

In this case, the IRCF 14 needs a film thickness of a predetermined thickness, but in general, it is difficult to increase the viscosity of the material of the IRCF 14, and a desired film thickness cannot be formed at once. However, when overcoating is performed, there is a concern that microvoids and air inflow may occur, resulting in deterioration of optical properties.

In addition, the glass substrate 12 is bonded by the adhesive 15 after the IRCF 14 is formed on the solid-state imaging device 11, but because curing shrinkage of the IRCF 14 causes warping, glass There is a fear that a bonding failure between the substrate 12 and the IRCF 14 may occur. Furthermore, only the glass substrate 12 cannot correct the warpage of the IRCF 14, and warpage occurs as a whole device, and there is a concern that the optical properties are deteriorated.

Further, in particular, in the case where the glass substrate 12 and the IRCF 14 are bonded through the adhesive 15, as shown in the upper range Z411 of FIG. 29, at the time of individualization, the adhesive 15 The resulting resin burr is generated, and there is a concern that the work precision may be reduced during mounting such as a pickup.

Accordingly, as shown in the middle part of Fig. 29, the IRCF 14 is divided into two so as to be IRCFs 14-1 and 14-2, and the adhesive 15 between the IRCFs 14-1 and 14-2 is Bonded by

With this configuration, when the IRCFs 14-1 and 14-2 are formed, it becomes possible to divide and form a thin film, so that a thick film for obtaining desired spectral characteristics is easily formed (divided forming).

In addition, when bonding the glass substrate 12 to the solid-state imaging device 11, the step difference (sensor level difference such as PAD) on the solid-state imaging device 11 can be flattened by the IRCF 14-2 and bonded. It becomes possible to thin the adhesive 15, and as a result, it becomes possible to make the height of the imaging device 1 low.

Furthermore, the warpage is canceled out by the IRCFs 14-1 and 14-2 formed on each of the glass substrate 12 and the solid-state imaging element 11, and it becomes possible to reduce the warpage of the device chip.

Further, the elastic modulus of the glass is higher than that of IRCF (14-1, 14-2). By making the elastic modulus of the IRCFs 14-1 and 14-2 higher than the elastic modulus of the adhesive 15, the top and bottom of the low-elastic adhesive 15 at the time of individualization, the IRCF 14- having a higher elastic modulus than the adhesive 15. 1, 14-2), it is possible to suppress the occurrence of resin burrs during expansion, as shown in the upper range Z412 in FIG. 29.

Further, as shown in the lower part of Fig. 29, IRCFs 14'-1 and 14'-2 having a function as an adhesive may be formed, and they may be directly bonded by making them face each other. By doing so, it is possible to suppress the occurrence of resin burrs of the adhesive 15 generated during individualization.

<Production method>

Next, referring to FIG. 30, with respect to the solid-state imaging device 11 shown in the middle portion of FIG. 29, the glass substrate 12 is interposed with the adhesive 15 by IRCFs 14-1 and 14-2. A manufacturing method of bonding is described.

In the first step, as shown in the upper left portion of FIG. 30, the IRCF 14-1 is applied to the glass substrate 12 and formed. Further, the IRCF 14-2 is applied to the solid-state imaging device 11 and formed. On the other hand, in the upper left part of FIG. 30, after the IRCF 14-1 is applied and formed, the glass substrate 12 is drawn in a state in which the top and bottom are inverted.

In the second step, the adhesive 15 is applied on the IRCF 14-2 as shown in the upper center of Fig. 30.

In the third step, as shown in the upper right portion of FIG. 30, on the adhesive 15 shown in the upper center portion of FIG. 30, the IRCF 14-1 of the glass substrate 12 and the adhesive 15 It is joined so as to face the applied surface.

In the fourth step, as shown in the lower left portion of FIG. 30, an electrode is formed on the back side of the solid-state image sensor 11.

In the fifth step, as shown in the lower center of Fig. 30, the glass substrate 12 is thinned by polishing.

Then, after the fifth step, it is divided into pieces by cutting the ends by a blade or the like, and the IRCFs 14-1 and 14-2 are laminated on the imaging surface, and further, the solid-state imaging device 11 on which the glass substrate 12 is formed. ) Is completed.

By the above process, since the adhesive 15 is sandwiched between the IRCFs 14-1 and 14-2, it becomes possible to suppress the occurrence of burrs due to the individualization.

In addition, for IRCFs 14-1 and 14-2, it is possible to form the required film thickness in half, and the thickness required for overcoating can be reduced, or overcoating is not required. It becomes possible to suppress the occurrence of inflow and reduce deterioration of optical properties.

Furthermore, since the film thickness of each of the IRCFs 14-1 and 14-2 becomes thin, it is possible to reduce warpage due to cure shrinkage, and it is possible to suppress the occurrence of bonding failure between the glass substrate 12 and the IRCF 14. It becomes possible, and it becomes possible to suppress the deterioration of the optical properties caused by warping.

On the other hand, as shown in the lower part of Fig. 29, in the case where the IRCFs 14'-1 and 14'-2 having the function of an adhesive are used, the process of applying the adhesive 15 is only omitted. Description is omitted.

<Modification example of side shape after reorganization>

By the above-described manufacturing method, IRCFs 14-1 and 14-2 are formed, and further, in reorganizing the solid-state imaging device 11 on which the glass substrate 12 is formed, the side cross section of the end is formed by a blade or the like. It is premised that it is cut perpendicular to the imaging plane.

However, by adjusting the shapes of the IRCFs 14-1 and 14-2 formed on the solid-state imaging device 11 and the side cross-sections of the glass substrate 12, the glass substrate 12, the IRCF 14-1, 14-2), and the influence by falling wastes caused by the adhesive 15 may be further reduced.

For example, as shown in the upper left part of Fig. 31, the external shape of the solid-state image sensor 11 in the horizontal direction is the largest, and the glass substrate 12, IRCFs 14-1, 14-2, and an adhesive ( All 15) are equal, and the side cross section may be formed so that it may become smaller than the solid-state image sensor 11.

Further, as shown in the upper right part of Fig. 31, the external shape of the solid-state imaging device 11 in the horizontal direction is the largest, the IRCFs 14-1, 14-2 and the adhesive 15 have the same external shape, and are solid Next to the imaging device 11, a side cross section may be formed so that the outer shape of the glass substrate 12 is the smallest.

In addition, as shown in the lower left part of FIG. 31, the solid-state imaging element 11, the IRCF (14-1, 14-2), the adhesive 15, and the glass substrate 12 in the order of the outer shape in the horizontal direction are large. A side cross section may be formed so that it may become.

In addition, as shown in the lower right part of FIG. 31, the external shape of the solid-state imaging element 11 in the horizontal direction is the largest, and next, the external shape of the glass substrate 12 is large, and IRCFs 14-1, 14- 2) The outer shape of the adhesive 15 and the adhesive 15 may be the same, and a side cross-section may be formed so as to be the smallest.

<Reorganization method of the upper left part of FIG. 31>

Next, with reference to FIG. 32, a method for reorganizing the upper left portion of FIG. 31 will be described.

At the upper end of FIG. 32, a view for explaining a side cross section shown in the upper left portion of FIG. 31 is shown. That is, at the upper end of Fig. 32, the outer shape of the solid-state image sensor 11 in the horizontal direction is the largest, followed by the glass substrate 12, IRCFs 14-1 and 14-2, and the adhesive 15 Are all equally large, and a side cross-section smaller than that of the solid-state imaging device 11 is shown.

Here, with reference to the middle end of Fig. 32, a method of forming a side cross section shown in the upper left portion of Fig. 31 will be described. On the other hand, the middle end of Fig. 32 is an enlarged view of the boundary of the adjacent solid-state imaging elements 11 cut out by individualization as viewed from the side.

In the first step, the glass substrate 12, the IRCF 14-1, and the blades having a predetermined width Wb (for example, about 100 μm) are used at the boundary of the adjacent solid-state image sensor 11. The range Zb consisting of 14-2) and the adhesive 15 is grooved from the surface layer of the IRCF 14-1 to the depth Lc1.

Here, in the central part of FIG. 32, the position from the surface layer of the IRCF 14-1 to the depth Lc is a position up to the wiring layer 11M formed by Cu-Cu bonding or the like as the surface layer of the solid-state imaging device 11 However, it is sufficient to reach the surface layer of the solid-state imaging device 11. Therefore, with respect to the depth Lc1, it may be made to be trenched up to the surface layer of the semiconductor substrate 81 in FIG. 6.

Further, as shown in the center portion of FIG. 32, the blade is grooved at the boundary in a state centered on the center position of the adjacent solid-state imaging device 11 indicated by the dashed-dotted line. In addition, in the figure, the width WLA is a width at which a wiring layer formed at the end of two adjacent solid-state imaging elements 11 is formed. Further, the width Wc of one chip of the solid-state imaging device 11 to the center of the scribe line is the width Wc, and the width Wg to the end of the glass substrate 12 is the width Wg.

Further, the range Zb corresponds to the shape of the blade, the upper portion is the width Wb of the blade, and the lower portion is expressed in a hemispherical shape, but corresponds to the shape of the blade.

In the second step, for example, the Si substrate (semiconductor substrate 81 in FIG. 6) of the solid-state imaging device 11 is grooved through the glass substrate 12 by dry etching, laser dicing, or a blade. By cutting the range Zh having a predetermined width Wd (for example, about 35 µm) thinner than one blade, the solid-state image sensor 11 is divided into pieces. However, in the case of laser dicing, the width Wd is approximately zero. In addition, the cut shape can be adjusted to a desired shape by dry etching, laser dicing, or a blade.

As a result, as shown in the lower part of FIG. 32, the external shape of the solid-state image sensor 11 in the horizontal direction is the largest, and the glass substrate 12, IRCFs 14-1 and 14-2, and the adhesive 15 Are all equal, and the side cross section is formed so that it may become smaller than the solid-state imaging element 11.

On the other hand, in the lower part of FIG. 32, as shown in the range Z431, a part of the horizontal direction near the boundary with the solid-state imaging element 11 of the IRCF 14-2 is in the horizontal direction of the IRCF 14-1. It is drawn wider than the width, and is different from the shape of the side cross section of the glass substrate 12, the IRCF 14-1, 14-2, and the adhesive 15 at the upper end of FIG.

However, it is the result of drawing by deformer of the cutting shape by the blade, and by adjusting the cutting shape by dry etching, laser dicing, or the blade, substantially, the configuration at the lower end of FIG. 32 and the upper end of FIG. 32 The configuration in can be the same.

In addition, the process of cutting the Si substrate (semiconductor substrate 81 in Fig. 6) forming the solid-state imaging device 11 by the range Zh may be performed prior to the grooving operation in the range Zb, At this time, with respect to the state shown in the middle stage of Fig. 32, the operation may be performed in a state in which it is inverted up and down.

Further, since the wiring layer is liable to crack or peel off during blade dicing, the range Zh may be grooved by abrasion processing using a short pulse laser.

<Reorganization method of the upper right part of FIG. 31>

Next, with reference to FIG. 33, a method for reorganizing the upper right portion of FIG. 31 will be described.

At the upper end of Fig. 33, a diagram illustrating a side cross section shown in the upper right portion of Fig. 31 is shown. That is, at the upper end of Fig. 33, the external shape of the solid-state imaging element 11 in the horizontal direction is the largest, the IRCFs 14-1 and 14-2 and the adhesive 15 have the same external shape, and the solid-state imaging element 11 ) Next, a side cross-section formed so that the outer shape of the glass substrate 12 is the smallest is shown.

Here, with reference to the middle end of Fig. 33, a method of forming a side cross section shown in the upper right portion of Fig. 31 will be described. On the other hand, the middle end of FIG. 33 is an enlarged view of the boundary of the adjacent solid-state imaging elements 11 cut out by individualization as viewed from the side.

In the first step, the range consisting of the glass substrate 12, the IRCFs 14-1 and 14-2, and the adhesive 15 by a blade having a predetermined width Wb1 (for example, about 100 μm) (Zb1) is grooved from the surface layer of the IRCF 14-1 to the depth Lc11.

In the second step, a range Zb2 having a depth exceeding 11M of the wiring layer is grooved by a blade having a predetermined width Wb2 (<width Wb1).

In the third process, for example, the Si substrate (semiconductor substrate 81 in Fig. 6) is dry etched, laser diced, or a predetermined width Wd (for example, smaller than the width Wb2) by a blade. For example, the solid-state image sensor 11 is divided into pieces by cutting the range Zh made of (about 35 µm). However, in the case of laser dicing, the width Wd is approximately zero. In addition, the cut shape can be adjusted to a desired shape by dry etching, laser dicing, or a blade.

As a result, as shown in the lower part of FIG. 33, the external shape of the solid-state imaging element 11 in the horizontal direction is the largest, and the external shapes of the IRCFs 14-1 and 14-2 and the adhesive 15 are equivalent, and Next to the imaging device 11, a side cross-section is formed so that the glass substrate 12 is the smallest, and is the largest.

On the other hand, at the lower end of FIG. 33, a part of the horizontal direction of the IRCF 14-1 is drawn equal to the width of the glass substrate 12 in the horizontal direction as shown in the range Z441. Further, as shown in the range Z442, a part of the horizontal direction of the IRCF 14-2 is drawn wider than the width of the IRCF 14-1 in the horizontal direction.

Therefore, the shape of the side cross section of the glass substrate 12, the IRCF 14-1, 14-2, and the adhesive 15 at the lower end of FIG. 33 is different from the shape at the upper end of FIG.

However, as a result of deforming and drawing the cutting shape by the blade, by adjusting the cutting shape by dry etching, laser dicing, or the blade, substantially, the configuration at the lower end of Fig. 32 and the configuration at the upper end of Fig. 32 Can do the same.

In addition, the process of cutting the Si substrate (semiconductor substrate 81 in Fig. 6) forming the solid-state imaging device 11 by the range Zh may be performed prior to the grooving operation in the ranges Zb1 and Zb2. At this time, with respect to the state shown in the middle stage of Fig. 33, the operation may be performed in a state in which the upper and lower sides are inverted.

Further, since the wiring layer is liable to cause cracks and film peeling during blade dicing, the range Zh may be grooved by ablation processing using a short pulse laser.

<Reorganization method of the lower left part of FIG. 31>

Next, with reference to FIG. 34, a method for subdividing the lower left portion of FIG. 31 will be described.

At the upper end of Fig. 34, a diagram illustrating a side cross section shown in the lower left portion of Fig. 31 is shown. That is, in the upper part of FIG. 34, the size of the external shape is the order of the external shape of the solid-state image sensor 11 in the horizontal direction, IRCFs 14-1 and 14-2, the adhesive 15, and the glass substrate 12 A large side cross section is shown.

Here, with reference to the middle end of Fig. 34, a method of forming a side cross section shown in the lower left portion of Fig. 31 will be described. On the other hand, the middle end of Fig. 34 is an enlarged view of the boundary of the adjacent solid-state imaging elements 11 cut out by individualization as viewed from the side.

In the first step, the range consisting of the glass substrate 12, the IRCFs 14-1 and 14-2, and the adhesive 15 by a blade having a predetermined width Wb1 (for example, about 100 μm) (Zb) is grooved from the surface layer of the IRCF 14-2 to the depth Lc21.

In the second step, ablation processing with a laser is performed by a predetermined width Wb2 (<width Wb1), and a range ZL to a depth exceeding 11M of the wiring layer is grooved.

In this step, the IRCFs 14-1 and 14-2 and the adhesive 15 cause heat contraction in the vicinity of the processing surface by absorption of laser light, so that the adhesive 15 is IRCF ( It retreats with respect to the cut surfaces of 14-1 and 14-2) and becomes a concave shape.

In the third step, for example, the Si substrate (semiconductor substrate 81 in Fig. 6) is dry etched, laser diced, or a predetermined width Wd that is thinner than the width Wb2 (e.g. For example, the solid-state image sensor 11 is divided into pieces by cutting the range Zh made of (about 35 µm). However, in the case of laser dicing, the width Wd is approximately zero. In addition, the cut shape can be adjusted to a desired shape by dry etching, laser dicing, or a blade.

As a result, as shown in the lower part of FIG. 34, the external shape of the solid-state imaging element 11 in the horizontal direction is the largest, and next, the external shape of the IRCFs 14-1 and 14-2 is large, and further, The outer shape of the adhesive 15 is large, and a side cross section is formed so that the glass substrate 12 is the smallest. That is, as shown in the range Z452 at the lower end of Fig. 34, the outer shape of the adhesive 15 is smaller than the outer shape of the IRCFs 14-1 and 14-2.

On the other hand, at the lower end of FIG. 34, a part of the horizontal direction of the IRCF 14-2 is drawn wider than the width of the IRCF 14-1 in the horizontal direction, as shown in the range Z453. In addition, as shown in the range Z451, a part of the horizontal direction of the IRCF 14-1 is drawn equal to the width of the glass substrate 12 in the horizontal direction.

Therefore, the shape of the side cross section of the glass substrate 12, the IRCF 14-1, 14-2, and the adhesive 15 at the lower end of FIG. 34 is different from the shape at the upper end of FIG.

However, it is the result of drawing by modifying the cutting shape by the blade, and by adjusting the cutting shape by dry etching, laser dicing, or by means of the blade, substantially, the configuration at the lower end of Fig. 32 and the configuration at the upper end of Fig. 32 are You can do the same.

In addition, the process of cutting the Si substrate (semiconductor substrate 81 in Fig. 6) forming the solid-state image sensor 11 by the range Zh may be performed prior to the grooving operation in the range Zb and ZL. At this time, with respect to the state shown in the middle stage of Fig. 34, the operation may be performed in a state in which the upper and lower sides are inverted.

Further, since the wiring layer is liable to cause cracks and film peeling during blade dicing, the range Zh may be grooved by ablation processing using a short pulse laser.

<Reorganization method of the lower right of FIG. 31>

Next, with reference to FIG. 35, a method for subdividing the lower right of FIG. 31 will be described.

At the upper end of Fig. 35, a diagram illustrating a side cross section shown in the lower right portion of Fig. 31 is shown. That is, at the upper end of FIG. 35, the outer shape of the solid-state imaging element 11 in the horizontal direction is the largest, and next, the outer shape of the glass substrate 12 is large, and the IRCFs 14-1, 14-2 and the adhesive The outer shape of (15) is equivalent and the smallest side cross section is shown.

Here, with reference to the middle end of Fig. 35, a method of forming a side cross section shown in the lower right portion of Fig. 31 will be described. On the other hand, the middle end of FIG. 35 is an enlarged view of the boundary of the adjacent solid-state imaging elements 11 cut out by individualization as viewed from the side.

In the first step, by a so-called stealth (laser) dicing process using a laser, the glass substrate 12 in the range Zs1 in which the width Ld becomes substantially zero is substantially grooved. .

In the second step, ablation processing with a laser is performed by a predetermined width (Wab) to exceed the IRCF (14-1, 14-2), and the wiring layer (11M) in the solid-state imaging device (11). The range ZL to be the depth is grooved.

In this step, ablation processing using a laser is adjusted so that the cut surfaces of the IRCFs 14-1 and 14-2 and the adhesive 15 are the same.

In the third step, by a so-called stealth (laser) dicing process using a laser, the range Zs2 whose width is almost zero is grooved, and the solid-state image sensor 11 is divided into pieces. At this time, the organic matter generated by ablation is discharged to the outside through the stealth dicing groove.

As a result, as shown in the ranges Z461 and Z462 at the lower end of FIG. 35, the external shape of the solid-state imaging element 11 in the horizontal direction is the largest, and next, the external shape of the glass substrate 12 is large, The side cross-sections are formed so that the outer shapes of the IRCFs 14-1 and 14-2 and the adhesive 15 are equal and the smallest.

In addition, the order of the stealth dicing processing for the glass substrate 12 and the stealth dicing processing for the solid-state imaging device 11 may be changed, and at this time, the state shown in the middle of FIG. 35 is vertically reversed. You may allow the work to be carried out in one state.

<Addition of anti-reflection film>

In the above, as shown in the upper left part of Fig. 36, the IRCFs 14-1 and 14-2 are adhered to the solid-state imaging device 11 with the adhesive 15 to form, furthermore, the IRCF 14-1 ) By forming the glass substrate 12 on the glass substrate 12, while suppressing the occurrence of burrs and suppressing the reduction in optical properties, an example has been described, but further, an additional film having an antireflection function may be formed.

That is, for example, as shown in the left middle portion of FIG. 36, an additional film 371 having an antireflection function may be formed on the glass substrate 12.

In addition, for example, as shown in the lower left part of FIG. 36, on the glass substrate 12, the boundary between the glass substrate 12 and the IRCF 14-1, the IRCF 14-1 and the adhesive 15 Additional films 371-1 to 371-4 having an antireflection function may be formed at the boundary and the boundary between the adhesive 15 and the IRCF 14-2.

In addition, as shown in each of the upper right portion, the right middle portion, and the lower right portion in FIG. 36, any one of the additional films 371-2, 371-4, and 371-3 having an antireflection function may be formed, These may be formed in combination.

On the other hand, the additional films 371, 371-1 to 371-4 are formed of, for example, a film having a function equivalent to the above-described AR coating 271a or the anti-reflection treatment unit (Moss eye) 291a. You can do it.

The incident of unnecessary light is prevented by these additional films 371, 371-1 to 371-4, and generation of ghosts and flares is suppressed.

<Addition to the side part>

In the above, on the glass substrate 12, the boundary between the glass substrate 12 and the IRCF 14-1, the boundary between the IRCF 14-1 and the adhesive 15, and the adhesive 15 and the IRCF 14-2 An example in which the additional films 371-1 to 371-4 having an antireflection function are formed on at least one of the boundaries of () has been described, but an additional film that functions as an antireflection film or a light absorbing film may be formed on the side surface. .

That is, as shown in the left part of FIG. 37, the glass substrate 12, the IRCFs 14-1 and 14-2, the adhesive 15, and the whole side cross section of the solid-state imaging device 11 are An additional film 381 functioning as an absorption film or the like may be formed.

In addition, as shown in the right part of Fig. 37, only the side surfaces of the glass substrate 12, IRCFs 14-1 and 14-2, and the adhesive 15, excluding the side surfaces of the solid-state imaging device 11, are reflected. An additional film 381 functioning as an prevention film or a light absorption film or the like may be formed.

In either case, the solid-state imaging element 11, the glass substrate 12, the IRCFs 14-1 and 14-2, and the adhesive 15 are provided with an additional film 381 on the side surfaces thereof, thereby providing the solid-state imaging element 11 Unnecessary incidence of light to) is prevented, and generation of ghosts and flares is suppressed.

<17. 17th embodiment>

In the above, by adjusting the size relationship in the horizontal direction of each of the solid-state imaging element 11, IRCF 14-1, adhesive 15, IRCF 14-2, and glass substrate 12 to be laminated, the falling waste While the example of suppressing the occurrence of flare and ghost has been described, by defining the shape of the lens, a compact, lightweight, high-resolution lens may be realized.

For example, when a glass substrate 12 is formed on the solid-state imaging device 11 and a lens corresponding to the lens 271 on which the AR coating 271a is formed is bonded (for example, in FIG. I think about the integrated configuration part 10 in the imaging device 1). On the other hand, the configuration of the imaging device 1 may be other than FIG. 19, for example, the lens 131 in the integrated configuration unit 10 in the imaging device 1 in FIG. 271) is the same.

That is, as shown in Fig. 38, the concentric concentric lens 401 (corresponding to the lens 271 in Fig. 19) in a concentric circle shape centered on the position of the center of gravity viewed from the image surface, It is assumed that it is formed on the glass substrate 12 on the solid-state image sensor 11. In addition, the lens 401 is formed with an AR coating 402 (a film having a function equivalent to the above-described AR coating 271a or anti-reflection processing unit 291a) on the surface on which light is incident, and a protrusion ( 401a) is assumed to be formed. On the other hand, FIGS. 38 and 39 show a configuration in which the solid-state imaging element 11, the glass substrate 12, and the lens 271 are extracted from the integrated configuration unit 10 in the imaging device 1 of FIG. 19. Is shown.

Here, as shown in Fig. 39, the lens 401 has a bowl shape in which the center of gravity as viewed from the upper surface is centered and has an aspherical concave shape. On the other hand, in Fig. 39, the upper right part in the drawing shows the cross-sectional shape of the lens 401 in the direction indicated by the dotted line at the upper left part in the drawing, and the lower right part in the drawing is the direction indicated by the solid line at the upper left part in the drawing. The cross-sectional shape of the lens 401 in is shown.

In FIG. 39, the range (Ze) of the lens 401 has a common aspherical curved surface structure in the upper right and lower right of FIG. 39, and by this shape, the image pickup surface of the solid-state image sensor 11 is positioned above the figure. An effective region for condensing incident light from is formed.

In addition, since the lens 401 is formed of an aspherical curved surface, the thickness of the lens 401 changes according to a distance from the center position in the incident direction and the vertical direction. More specifically, at the center position, the lens thickness is the thinnest thickness (D), and the lens thickness at the position farthest from the center in the range (Ze) is the thickest thickness (H). In addition, when the thickness of the glass substrate 12 is the thickness (Th), the thickest thickness (H) of the lens 401 is thicker than the thickness (Th) of the glass substrate 12, and the thinnest of the lens 401 The resulting thickness D is thinner than the thickness Th of the glass substrate 12.

That is, when these relationships are put together, the thickness (D, H, Th) is obtained by using the lens 401 and the glass substrate 12 satisfying the relationship of thickness (H)> thickness (Th)> thickness (D). , It becomes possible to realize the imaging device 1 (integrated structure part 10) which is small and lightweight and capable of imaging at high resolution.

In addition, by making the volume (VG) of the glass substrate 12 smaller than the volume (VL) of the lens 401, it becomes possible to form the volume of the lens most efficiently, so it is possible to capture a small, lightweight and high-resolution image. It becomes possible to realize the device 1.

<Stress distribution generated during heating to AR coating>

Further, with the above configuration, stress due to expansion or contraction of the AR coating 402 during a mounting reflow heat load or during a reliability test can be suppressed.

FIG. 40 shows a stress distribution due to expansion or contraction of the AR coating 402 under mounting reflow heat load when the external shape of the lens 401 in FIG. 39 is changed. On the other hand, the stress distribution in FIG. 40 is, based on the center position of the lens 401 shown in the range Zp shown in FIG. 38, in the horizontal direction and in the vertical direction, respectively, 1/2, that is, 1/ of the whole. The distribution in the range of 4 is shown.

In the leftmost part of Fig. 40, the stress distribution generated in the AR coating 402A during mounting reflow heat load in the lens 401A in which the protrusion 401a is not provided is shown.

In the second from the left of Fig. 40, the stress distribution generated in the AR coating 402B under mounting reflow heat load in the lens 401B provided with the protrusion 401a shown in Fig. 39 is shown.

In the third from the left of Fig. 40, the height of the protrusion 401a shown in Fig. 39 is higher than that of Fig. 39, which occurs in the AR coating 402C during mounting reflow heat load. The stress distribution is shown.

In the fourth from the left of Fig. 40, the width of the protrusion 401a shown in Fig. 39 is larger than that of Fig. 39, which occurs in the AR coating 402D during mounting reflow heat load in the lens 401D. The stress distribution is shown.

In the fifth from the left of FIG. 40, the taper provided on the side surface of the outer circumferential portion of the protrusion 401a shown in FIG. 39 is larger than that in the case of FIG. 39, AR coating under mounting reflow heat load in the lens 401E The stress distribution generated in (402E) is shown.

In the rightmost part of Fig. 40, the stress distribution generated in the AR coating 402F under mounting reflow heat load in the lens 401F provided only on the four sides of the outer circumference of the protrusion 401a shown in Fig. 39 is shown. Is turned off.

As shown in Fig. 40, in the stress distribution generated in the AR coating 402A of the lens 401A without the protrusion 401a shown in the leftmost part, a large stress distribution appears on the outer circumferential side of the effective region, but the protrusion 401a For the AR coatings 402B to 402F of the lenses 401B to 401F in which) is formed, there is no stress distribution as large as that shown in the AR coating 402A.

That is, by providing the protrusion 401a in the lens 401, it becomes possible to suppress the occurrence of cracks in the AR coating 402 due to expansion and contraction of the lens 401 during mounting reflow heat load.

<Modified example of lens shape>

In the above, an example of configuring the imaging device 1 which is compact and lightweight and capable of imaging at high resolution by means of the concave lens 401 provided with a protrusion 401a tapered on the outer periphery as shown in FIG. Explained. However, as long as the thickness (D, H, Th) of the lens 401 and the glass substrate 12 satisfies the relationship between thickness (H)> thickness (Th)> thickness (D), the shape of the lens 401 is Other shapes may be used. In addition, it is more preferable if the volumes (VG, VL) satisfy the relationship of the volume (VG) <volume (VL).

For example, as shown in the lens 401G in FIG. 41, the side surface on the outer circumferential side of the protruding portion 401a may be configured to be at right angles to the glass substrate 12, and a configuration may not include a taper. .

In addition, as shown to the lens 401H in FIG. 41, the side surface on the outer circumferential side of the protruding portion 401a may be configured to include a round taper.

Further, as shown in the lens 401I of FIG. 41, the protrusion 401a itself may not be included, and the side surface may be configured to include a linear tapered shape forming a predetermined angle with respect to the glass substrate 12. .

In addition, as shown in the lens 401J of FIG. 41, the protrusion 401a itself is not included, and the side surface is formed at a right angle to the glass substrate 12, so that the tapered shape is not included. You can do it.

Further, as shown in the lens 401K in FIG. 41, the protrusion 401a itself may not be included, and the side surface may be configured to include a tapered shape having a round shape with respect to the glass substrate 12.

In addition, as shown to the lens 401L of FIG. 41, the protrusion 401a itself is not included, and the side surface of the lens may be configured as a two-stage structure having two inflection points. On the other hand, the detailed configuration of the lens 401L will be described later with reference to FIG. 42. In addition, since the side surface of the lens 401L is a two-stage configuration having two inflection points, hereinafter, it is also referred to as a two-stage side-type lens.

Further, as shown to the lens 401M in Fig. 41, the side surface includes the protruding portion 401a, and may be configured as a two-stage configuration having two inflection points on the external side surface.

In addition, as shown in the lens 401N of FIG. 41, the protrusion 401a is included, and the side surface is configured to form a right angle with respect to the glass substrate 12, and further, in the vicinity of the boundary with the glass substrate 12 You may make it add a square-shaped hemming bottom part 401b.

Further, as shown in the lens 401N of FIG. 41, the structure including the protrusion 401a and forming a right angle with respect to the glass substrate 12, further, a round shape near the boundary with the glass substrate 12 The hemming bottom portion 401b' of may be added.

<Detailed configuration of 2-stage side-type lens>

Here, a detailed configuration of the two-stage side-type lens 401L of FIG. 41 will be described with reference to FIG. 42.

42 shows external perspective views when viewed from various directions when the glass substrate 12 is formed on the solid-state image sensor 11 and a two-stage side-type lens 401L is provided thereon. Here, in the upper center portion of Fig. 42, sides LA, LB, LC, and LD are set clockwise from the right side in the diagram of the solid-state image sensor 11.

In addition, the right part of FIG. 42 is the side (LA, LB) of the solid-state imaging device 11 when the solid-state imaging device 11 and the lens 401L are viewed from the direction of the line of sight E1 in the upper center of FIG. The perspective view around the corner is shown. In addition, the lower center part of FIG. 42 is the sides LA and LB of the solid-state image sensor 11 when the solid-state image sensor 11 and the lens 401L are viewed from the direction of the line of sight E2 from the upper center part of FIG. It shows a perspective view around the corner of Further, the left part of FIG. 42 is a corner of the sides LB and LC of the solid-state imaging device 11 when the solid-state imaging device 11 and the lens 401L are viewed from the direction of the line of sight E3 in the center of FIG. It shows a perspective view around the part.

That is, in the two-stage side-type lens 401L, the central portion of the long-sided sides LB and LD (not shown) is the thickness of the lens as viewed from the top surface of the two-stage side-type lens 401L as a concave lens. Since is at a position close to the position of the center of gravity in a circle functioning as the lens that becomes the thinnest, the lens becomes thin, and the ridge line becomes a gentle curved shape as surrounded by a dotted line.

On the other hand, since the central portions of the sides LA and LC that become the short sides are located far from the center of gravity, the lens is formed thick, so that the ridge line becomes a straight line.

<Two inflection points and two-stage side>

In addition, in the cross-sectional shape of the two-stage side-type lens 401L, in the cross-sectional shape, the side surfaces of the non-effective areas provided outside the effective area Ze have a two-stage configuration, and the average of each side surface The surfaces X1 and X2 are formed to be shifted, and the inflection points P1 and P2 in the cross-sectional shape are formed at a position where a step difference occurs due to the two-stage side surfaces.

The inflection points P1 and P2 are sequentially changed in the order of concave and convex from a position close to the solid-state image sensor 11.

In addition, the heights of the inflection points P1 and P2 from the glass substrate 12 are all provided at positions higher than the thinnest thickness Th in the two-stage side-type lens 401L.

Further, the difference (distance between the average planes X1, X2) between the average planes X1 and X2 of the two-stage side surfaces is the thickness of the solid-state image sensor 11 (silicon of the solid-state image sensor 11 in FIG. 6 ). It is preferable to make it larger than the thickness of the substrate 81).

In addition, the difference in the distance between the average surfaces X1 and X2 on the two-stage side surfaces is the area width perpendicular to the incident direction of the incident light in the effective area of the lens 401L (e.g., in the horizontal direction in FIG. It is preferable to set it as 1% or more with respect to the width (He) or the height (Ve) in a vertical direction.

Therefore, if the two-stage side surface and the two inflection points satisfying the above-described conditions are formed, a shape other than the two-stage side-type lens 401L may be used. For example, as shown in the second stage from the top of FIG. 43, the average Inflection points (P11, P12) of a curvature different from the inflection points (P1, P2) at a position higher than the thinnest thickness (Th) of the lens from the glass substrate 12 with a two-stage side surface (X11, X12) This formed two-stage side-type lens 401P may be used.

In addition, for example, as shown in the third row from the top of FIG. 43, a two-stage side surface consisting of an average surface (X21, X22) is provided, and is higher than the thinnest thickness (Th) of the lens from the glass substrate 12. It may be a two-stage side-type lens 401Q in which the inflection points P1 and P2 and the inflection points P21 and P22 having a different curvature than the inflection points P1 and P22 are formed at the position.

Further, for example, as shown in the fourth row from the top of FIG. 43, a two-stage side surface consisting of an average surface (X31, X32) is provided, and is higher than the thinnest thickness (Th) of the lens from the glass substrate 12. The inflection points P31 and P32 are formed at the positions, and the two-stage side-type lens 401R may be formed in which the end of the lens 401 is rounded at the thickest position.

<The stress distribution generated during heating to the AR coating in a lens having two inflection points and two-stage side surfaces>

As described above, in the case of a two-stage side-type lens 401L having two inflection points and two-stage side surfaces, AR due to expansion or contraction of the lens 401L during mounting reflow heat load or reliability test. Stress applied to the coating 402 can be suppressed.

FIG. 44 shows stress distribution due to expansion or contraction of the AR coating 402 under mounting reflow heat load when the external shape of the lens 401 in FIG. 39 is changed. 44, the upper end is the stress distribution of the inner AR coating 402 when the lens 401 is viewed from a diagonal direction, and the lower end is the AR coating 402 on the front side when the lens 401 is viewed from a diagonal direction. ) Is the stress distribution.

In the leftmost part of Fig. 44, the AR coating 402S in the case of mounting reflow heat load in the lens 401S (corresponding to the lens 401A) that is not provided with a protrusion 401a nor is a two-stage side-type lens. The distribution of stress generated in is shown.

In the second from the left of Fig. 44, the stress distribution generated in the AR coating 402T during mounting reflow heat load in the lens 401T corresponding to the two-stage side-type lens 401L shown in Fig. 43 is shown. have.

In the third from the left of Fig. 44, the mounting reflow heat load in the lens 401U in which the protrusion 401a is not provided, but the tapered shape is provided and the corners of each side of the lens are formed into a round shape. The stress distribution generated in the city's AR coating 402U is shown.

In the fourth from the left in Fig. 44, neither the protrusion 401a nor the tapered shape is provided, and the side surface is perpendicular to the glass substrate 12, and the corner portions of each side of the lens are formed in a round shape. The stress distribution generated in the AR coating 402V during mounting reflow thermal load is shown.

In addition, FIG. 45 shows the total maximum value (Worst) in the stress distribution generated in the AR coating in each lens shape of FIG. 44 in order from the left, the maximum value (effective) of the effective area of the lens, and the ridge line. A graph of the maximum value (ridge line) of is shown. In addition, the graph of each maximum value in FIG. 45 shows the maximum value of the stress distribution of the AR coatings 402S to 402V in order from the left.

As shown in Fig. 45, in the case of the AR coating 402S of the lens 401S, the maximum stress of each lens is 1390 MPa in the corner portion Ws (Fig. 44) of the upper surface, and the maximum stress of the lens 401T In the case of the AR coating 402T, it is 1130 MPa in the corner portion Wt of the ridge (Fig. 44), and in the case of the AR coating 402U of the lens 401U, it is 800 MPa in Wu (Fig. 44) on the ridge line, and the lens In the case of (401V) AR coating (402V), it is 1230 MPa in Wv (Fig. 44) on the ridge line.

In addition, the maximum stress of the effective area of each lens is 646 MPa in the case of the AR coating 402S of the lens 401S, and 588 MPa in the case of the AR coating 402T of the lens 401T, as shown in FIG. , In the case of the AR coating 402U of the lens 401U, it is 690 MPa, and in the case of the AR coating 402V of the lens 401V, it is 656 MPa.

Further, the maximum stress of the ridge line of each lens is 1050 MPa in the case of the AR coating 402S of the lens 401S, 950 MPa in the case of the AR coating 402T of the lens 401T, and the AR coating of the lens 401U In the case of (402U), it is 800 MPa, and in the case of the AR coating 402U of the lens 401V, it is 1230 MPa.

According to FIG. 45, it is the AR coating 402S of the lens 401S that has the minimum maximum stress in each region, but according to FIG. 44, the overall stress of the effective area of the AR coating 402T of the lens 401T In terms of distribution, there is no stress distribution around 600 MPa, which exists in a range close to the outer periphery of the AR coating 402U of the lens 401U, and as a whole, the AR coating of the lens 401T (same as the lens 401L) It can be seen that in the external shape made of (402T), the stress distribution generated in the AR coating 402T of the AR coating 402T (same as the AR coating 402L) decreases.

That is, according to Figs. 44 and 45, in the case of a lens 401T (401L) having two inflection points and a side surface of a two-stage configuration under mounting reflow heat load, the AR coating 402T (402L) It can be seen that the expansion or contraction is suppressed, and the stress caused by expansion or contraction is decreasing.

As described above, by employing a two-stage side-type lens 401L having two inflection points and two-stage side surfaces as the lens 401, expansion or contraction due to heat is prevented during mounting reflow heat load or reliability tests. It becomes possible to suppress it.

As a result, it becomes possible to reduce the stress generated in the AR coating 402L, and it becomes possible to suppress the occurrence of cracks and lens peeling off. In addition, since it is possible to suppress the expansion or contraction of the lens itself, the occurrence of distortion is reduced, resulting in deterioration of image quality due to an increase in birefringence due to distortion, and an increase in interfacial reflection caused by a local change in the refractive index. It becomes possible to suppress the occurrence of flare.

<18. 18th embodiment>

In the above, an example of realizing a lens capable of small, lightweight and high-resolution imaging by defining the shape of the lens has been described, but by improving the precision when forming the lens on the solid-state imaging element 11, it is more compact, lightweight, and high-resolution. A lens capable of capturing an image may be realized.

As shown in the upper part of FIG. 46, in a state in which the mold 452 on the substrate 451 is pressed against the glass substrate 12 on the solid-state imaging device 11, the mold 452 and The space between the glass substrates 12 is filled with an ultraviolet light-curing resin 461 made of the material of the lens 401, and exposed by ultraviolet light from the top in the drawing for a predetermined time.

Both the substrate 451 and the mold 452 are made of a material that transmits ultraviolet light.

The molding die 452 is an aspherical convex structure corresponding to the shape of the concave lens 401, and a light shielding film 453 is formed on the outer periphery, and according to the incident angle of ultraviolet light, for example, shown in FIG. A taper may be formed on the side surface of the lens 401 having the angle θ as described above.

The ultraviolet light-curable resin 461, which is a material of the lens 401, is cured by being exposed to ultraviolet light for a predetermined period of time, and is formed as an aspherical concave lens as shown in the lower part of FIG. 46, and the glass substrate 12 Is attached to

After a predetermined time elapses in a state where ultraviolet light is irradiated, the ultraviolet light-curable resin 461 is cured to form the lens 401, and after the lens 401 is formed, the lens 401 on which the mold 452 is formed It is removed from (deformed).

At the boundary between the outer circumferential portion of the lens 401 and the glass substrate 12, a part of the ultraviolet light-curable resin 461 leaches from the molding die 452 to form a leaching portion 461a. However, since ultraviolet light is shielded by the light shielding film 453, the leaching part 461a is a leaching part that is a part of the ultraviolet light-curable resin 461 as shown in the range Zc in the enlarged view Zf. The 461a remains uncured and, after being molded out, is cured by ultraviolet light included in natural light, thereby remaining as the hemming bottom portion 401d.

Thereby, the lens 401 is formed as a concave lens by the molding die 452 and a tapered shape is formed on the side surface at an angle θ defined by the light shielding film 453. Further, on the outer circumferential portion of the lens 401, the hemming bottom portion 401d is formed at the boundary with the glass substrate 12, so that the lens 401 can be more firmly bonded to the glass substrate 12.

As a result, it becomes possible to form a lens with high precision that is small and light and capable of capturing high-resolution images.

On the other hand, in the above, the light shielding film 453 is the outer peripheral portion of the lens 401 on the back side (lower side in the drawing) with respect to the incident direction of the ultraviolet light of the substrate 451 as shown in the upper left portion of FIG. It has been described an example installed in. However, the light shielding film 453 is provided on the outer peripheral portion of the lens 401 on the surface side (the upper side in the drawing) with respect to the incident direction of the ultraviolet light of the substrate 451, as shown in the upper right portion of FIG. You can do it.

In addition, the light-shielding film 453 forms a shaping die 452' larger in the horizontal direction than the shaping die 452 in place of the substrate 451, as shown second from the top of the left in FIG. It may be provided on the outer peripheral portion of the lens 401 on the rear side (lower side in the drawing) with respect to the incident direction of external light.

Furthermore, the light shielding film 453 is on the surface side (upper side in the drawing) with respect to the incident direction of the ultraviolet light of the substrate 451 of the molding die 452', as shown in the second from the upper right of FIG. It may be installed on the outer peripheral portion of the lens 401.

In addition, the light-shielding film 453 forms a molding die 452" in which the substrate 451 and the molding die 452 are integrated, as shown in the third from the top left in FIG. 47, and the incident direction of ultraviolet light In contrast, it may be provided on the outer peripheral portion of the lens 401 on the rear side (lower side in the drawing).

Further, the light shielding film 453 forms a molding die 452" in which the substrate 451 and the molding die 452 are integrated, as shown in the third from the upper right of FIG. 47, and the incident direction of ultraviolet light In contrast, it may be provided on the outer peripheral portion of the lens 401 on the front side (the upper side in the drawing).

In addition, as shown in the lower left of Fig. 47, in addition to the substrate 451 and the molding die 452, a molding mold 452"' provided with a configuration defining a part of the side surface portion is formed, and the molding mold 452" The light shielding film 453 may be formed on the outer circumferential portion of') and on the back side with respect to the incident direction of ultraviolet light.

On the other hand, the configuration of FIGS. 46 and 47 is a configuration in which the IRCF 14 and the adhesive 15 in the integrated configuration unit 10 of the imaging device 1 in FIG. 9 are omitted, but for convenience of description Only, of course, it may be installed between the lens 401 (131) and the glass substrate 12. In addition, hereinafter, the description will be made taking as an example a configuration in which the IRCF 14 and the adhesive 15 are omitted from the configuration in the imaging device 1 in FIG. 9, but in either case, for example, a lens The IRCF 14 and the adhesive 15 may be provided between the 401(131) and the glass substrate 12.

<Method of forming a two-stage side-type lens>

Next, a method of manufacturing a two-stage side-type lens will be described.

About the basic manufacturing method, it is the same as the manufacturing method of a lens other than the above-mentioned two-stage side type.

That is, as shown in the left part of FIG. 48, a molding die 452 corresponding to the side shape of the two-stage side-type lens 401L is prepared with respect to the substrate 451, and the glass substrate on the solid-state imaging device 11 ( 12) An ultraviolet light curing resin 461 is placed on it. On the other hand, in Fig. 48, the configuration of only the right half of the side section of the molding die 452 is shown.

Next, as shown in the center of FIG. 48, by fixing the ultraviolet light-curable resin 461 on which the molding die 452 is placed against the glass substrate 12 so as to be pressed against the glass substrate 12, In a state filled with the external light-curing resin 461, ultraviolet light is irradiated for a predetermined time from above in the drawing.

The ultraviolet light-curable resin 461 is cured by being exposed to ultraviolet light, and a concave two-stage side-type lens 401 corresponding to the molding die 452 is formed.

After the lens 401 is formed by exposure to ultraviolet light for a predetermined time, as shown in the right part of FIG. 48, when the mold 452 is released, a lens 401 made of a two-stage side-type lens is completed. .

In addition, as shown in the left part of FIG. 49, of a part of the portion abutting the glass substrate 12 of the outer peripheral portion of the molding die 452, for example, of the two inflection points in the cross-sectional shape of the side surface, the glass substrate A portion below the height to be the inflection point at the position close to (12) may be cut, and the light shielding film 453 may be provided on the cut surface.

In this case, as shown in the second from the left in FIG. 49, when the ultraviolet light cured resin 461 is filled in the recess of the molding mold 452 and the ultraviolet light is irradiated for a predetermined time from above in the drawing, the light shielding film As for the lower part of 453, the ultraviolet light is shielded, so that the curing is not advanced, and the lens 401 is in an unfinished state. However, the ultraviolet light-curable resin 461 around the effective area in the drawing to which the ultraviolet light is exposed is cured and formed as the lens 401.

When the molding die 452 is released in this state, as shown in the third from the left in FIG. 49, of the lens 401 formed as a two-stage side-type lens, the glass substrate ( The side surface of the portion close to 12) is left as the leached portion 461a of the uncured ultraviolet light-curable resin 461.

Therefore, as shown in the right part of Fig. 49, with respect to the side surface of the uncured ultraviolet light-curable resin 461 in the state of the leaching portion 461a, the angle or surface roughness of the side surface is controlled to separate ultraviolet light. To cure by irradiation.

By doing so, as shown in the upper part of FIG. 50, the angle formed by the side average surfaces (X1, X2) of the lens 401, for example, different angles (θ1, θ2) with respect to the incident direction of the incident light, etc. It becomes possible to set the angle.

Here, when the angles of the side surfaces (X1, X2) are respectively angles (θ1, θ2), when the angle (θ1) <angle (θ2) is configured to suppress the occurrence of side flares, the molding mold 452 ) At the time of release, it becomes possible to suppress peeling of the finished lens 401 from the glass substrate 12.

Moreover, it becomes possible to make the surface roughness (ρ(X1), ρ(X2)) of each side surface X1, X2 into a different structure.

Here, by setting the surface roughness (ρ(X1), ρ(X2)) of each of the side surfaces (X1, X2) to be the surface roughness (ρ(X1)) <the surface roughness (ρ(X2)), the side flare While suppressing the occurrence, it becomes possible to suppress the peeling of the finished lens 401 from the glass substrate 12 at the time of releasing the mold 452.

Further, by adjusting the shape of the leaching portion 461a of the ultraviolet light-curable resin 461, it becomes possible to form the hemming bottom portion 401d as shown in the lower portion of FIG. 50. Thereby, it becomes possible to fix the lens 401 to the glass substrate 12 more firmly.

On the other hand, for the angles (θ1, θ2), surface roughness (ρ(X1), ρ(X2)), and the formation of the hemming bottom portion 401d, even when the light shielding film 453 referenced in FIG. 48 is not used, It is possible to set according to the shape of the molding die 452. However, as shown in FIG. 49, in the case where the shaping mold 452 provided with the light shielding film 453 is used, the leaching portion of the ultraviolet light-cured resin 461 left as an uncured portion in the initial irradiation of ultraviolet light ( Since 461a) can be adjusted later, it becomes possible to increase the degree of freedom of setting the angles θ1 and θ2, the surface roughness ρ(X1), ρ(X2), and the hemming bottom portion 401d.

In either case, it becomes possible to form the lens 401 on the glass substrate 12 of the solid-state imaging device 11 with high precision. In addition, it is possible to adjust the angle of the side surfaces (X1, X2), the surface roughness (ρ(X1), ρ(X2)), and the presence or absence of the hemming bottom part 401d in the two-stage side-type lens 401. Therefore, while suppressing the occurrence of flare and ghost, it becomes possible to form the lens 401 on the glass substrate 12 more firmly.

<19. 19th embodiment>

In the above, an example in which the lens 401 is formed on the glass substrate 12 on the solid-state image sensor 11 with high precision by the molding method has been described, but the lens 401 is formed at an appropriate position on the glass substrate 12 In order to do so, by forming an alignment mark on the glass substrate 12 and positioning it based on the alignment mark, the lens 401 may be formed on the glass substrate 12 with higher precision.

That is, as shown in FIG. 51, an effective area Ze (corresponding to the effective area 131a in FIG. 23) of the lens 401 from the center is provided, and an ineffective area Zn (corresponding to the effective area 131a in FIG. 23) is provided from the center. A region (corresponding to the ineffective region 131b) is provided, a region Zg in which the glass substrate 12 is exposed is provided at the outer circumference thereof, and a scribe line is set at the outermost circumference of the solid-state image sensor 11 ( Zsc) is installed. In Fig. 51, a protrusion 401a is provided in the non-effective region Zn (corresponding to the non-effective region 131b in Fig. 23).

The width of each area is the width of the effective area Ze> the width of the non-effective area Zn> the width of the area Zg where the glass substrate 12 is exposed> the width of the area Zsc in which the scribe line is set. Relationship.

The alignment mark 501 is formed in the region Zg on the glass substrate 12 where the glass substrate 12 is exposed. Therefore, although the size of the alignment mark 501 is smaller than the area Zg, it needs to be a size that can be recognized by an image for alignment.

An alignment mark 501 is formed on the glass substrate 12, for example, at a position where the corner portion of the lens 401 should abut, and based on the image captured by the alignment camera, in the molding mold 452 Alignment may be carried out by adjusting the corner portion of the lens to be the position where the alignment mark 501 is provided.

<Example of alignment mark>

The alignment marks 501 are, for example, alignment marks 501A to 501K as shown in FIG. 52.

That is, the alignment marks 501A to 501C are made of a square, the alignment marks 501D and 501E are made of a circular shape, the alignment marks 501F to 501I are made of polygons, and the alignment marks 501J and 501K are plural. Is made of a linear shape.

<Example of installing the alignment mark on a glass substrate and on a mold>

In addition, a black portion and a gray portion of the alignment marks 501A to 501K are respectively placed at positions corresponding to the outer peripheral portion of the lens 401 on the molding die 452 and the region Zg on the glass substrate 12, respectively. It is also possible to align the positional relationship between the lens 401 and the glass substrate 12 by forming and confirming whether or not there is a corresponding positional relationship based on an image captured by an alignment camera, for example.

That is, in the case of the alignment mark 501A, as shown in FIG. 52, the alignment mark of the gray portion made of a square frame on the molding mold 452 so that the lens 401 and the molding mold 452 have an appropriate positional relationship. A 501' is provided, and an alignment mark 501 made of a square portion that becomes a black portion is formed.

Then, the alignment mark 501 on the glass substrate 12 and the alignment mark 501' on the molding die 452 are imaged by an alignment camera from the arrow direction in FIG. 53, and the alignment mark 501 in a black square shape. ) May be included in the alignment mark 501' made of a gray rectangular frame, and the alignment may be adjusted by adjusting the position of the molding die 452 so that images are overlapped.

In this case, the alignment mark 501 in the black portion and the alignment mark 501' in the gray portion are preferably arranged in the same field of view of the same camera, but the positional relationship of the plurality of cameras is calibrated in advance, and a plurality of cameras Accordingly, alignment may be performed by correspondence of the positional relationship between the alignment marks 501 and 501' provided at corresponding different positions.

In either case, the alignment mark 501 enables the lens 401 to be positioned and formed with high precision on the glass substrate 12 of the solid-state imaging device 11.

<20. 20th embodiment>

In the above, an example in which the lens 401 and the glass substrate 12 on the solid-state imaging device 11 are positioned and formed with high precision by alignment marks has been described. However, the AR coating 402 is applied to the effective area of the lens 401. By forming ), the sensitivity may be improved and very fine (high precision) imaging may be realized.

That is, for example, as shown by the thick line at the top of FIG. 54, the non-effective region (non-effective region 131b of FIG. 23) including the side surface and the flat part of the protrusion 401a on the glass substrate 12 Correspondence), and the entire area of the effective area (corresponding to the effective area 131a in Fig. 23), the AR coating 402-P1 may be formed.

Further, for example, as shown in the second from the top of Fig. 54, the AR coating 402-P2 may be formed only in the effective area within the protrusion 401a on the lens 401. The AR coating 402-P2 is formed only in the area within the protrusion 401a on the lens 401 (effective area (corresponding to the effective area 131a in FIG. 23)), so that the lens 401 It becomes possible to reduce the stress caused by expansion or contraction due to heating, so that the occurrence of cracks in the AR coating 402-P2 can be suppressed.

Further, for example, as shown in the third from the top of Fig. 54, the area inside the protrusion 401a, including the planar portion of the protrusion 401a on the lens 401 (effective area (effective area in Fig. (Corresponding to 131a)), the AR coating 402-P3 may be formed. The AR coating 402-P3 is formed only in the area inside the protrusion 401a, including the protrusion 401a on the lens 401, so that the lens 401 expands or contracts due to heat during mounting reflow heat load, etc. By doing so, it becomes possible to reduce the stress generated in the AR coating 402-P3, and the occurrence of cracks can be suppressed.

Further, for example, as shown in the fourth from the top of Fig. 54, in addition to the flat portion of the protrusion 401a on the lens 401 and a part of the outer circumferential portion thereof, an area inside the protrusion 401a (effective region ( (Corresponding to the effective area 131a in FIG. 23)), the AR coating 402-P4 is formed, and further, in the vicinity of the boundary between the glass substrate 12 and the glass substrate 12 in the glass substrate 12 and the lens 401 The AR coating 402-P5 may be formed in the region. As in the case of AR coating (402-P4 402-P5), a region in which the AR coating is not formed is formed on a part of the side surface of the lens 401, so that the lens 401 expands or contracts due to heat during mounting reflow heat load, etc. By doing so, it becomes possible to reduce the stress generated in the AR coating 402-P2, and the occurrence of cracks can be suppressed.

55 shows the stress distribution generated in the AR coating 402 under mounting reflow heat load by variously changing the area where the AR coating 402 is formed with respect to the lens 401.

Fig. 55 shows the outer shape of the lens 401 and the AR coating 402 when the upper portion is divided into two horizontal and vertical portions of the lens 401, and the lower portion is the AR coating under the corresponding mounting reflow heat load. It is a stress distribution occurring at (402).

In the left part of FIG. 55, the AR coating 402AA is formed over the entire glass substrate 12, the side surface of the lens 401, the protrusion 401a, and the inside of the protrusion 401a. This is the case.

In the second from the left of FIG. 55, for the configuration of the leftmost part of FIG. 55, the AR coating is not formed on the side surfaces of the glass substrate 12 and the lens 401 in the vicinity, and the AR coating is formed in other areas. This is the case with AR coating 402AB.

In the third from the left of FIG. 55, with respect to the configuration of the leftmost part of FIG. 55, no AR coating is formed in the side area of the lens 401, and the surrounding glass substrate 12, the protrusion 401a, and the protrusion This is the case of AR coating 402AC in which AR coating has been applied to the inside of 401a.

The fourth from the left of FIG. 55 is the flatness of the top surface of the protrusion 401a as the side area of the lens 401, the flat part of the protrusion 401a, and the inner side of the protrusion 401a with respect to the configuration of the leftmost part of FIG. This is the case of the AR coating 402AD in which the AR coating is not formed in the area from the portion to the predetermined width A, and AR coating is applied to the glass substrate 12 inside and around the other protrusions 401a. . Here, the width A is, for example, 100 µm.

The fifth from the left of FIG. 55 shows the configuration of the leftmost part of FIG. 55, as the inner side of the protrusion 401a, the flat portion of the upper surface of the protrusion 401a, and the outer side of the protrusion 401a. This is the case of the AR coating 402AE in which the AR coating is formed in an area down to the width A.

The sixth from the left of FIG. 55 is the inner side of the protruding portion 401a, the flat portion of the upper surface of the protruding portion 401a, and the outer side of the protruding portion 401a. This is the case in the case of the AR coating 402AF in which the AR coating is formed in an area below the width 2A.

The seventh from the left of FIG. 55 is the inner side of the protruding portion 401a, the flat portion of the upper surface of the protruding portion 401a, and a side surface of the outer side of the protruding portion 401a. This is the case of the AR coating 402AG in which the AR coating is formed in an area below the width 3A.

The eighth from the left of FIG. 55 is the inner side of the protruding portion 401a, the flat portion of the upper surface of the protruding portion 401a, and the outer side of the protruding portion 401a. This is the case of the AR coating 402AH in which the AR coating is formed in an area down to the width 4A.

By comparison with the leftmost part of FIG. 55, in any case, the AR coating 402 is inside the protrusion 401a of the lens 401 than the AR coating 402AA formed to cover the entire surface of the lens 401 It is shown that the stress generated in the AR coating 402 is smaller when the AR coating in is formed in a state in which the AR coating 402 on the glass substrate 12 is not continuously connected.

As described above, when the AR coating 402 is formed on the lens 401, it becomes possible to suppress the occurrence of flares and ghosts, and it becomes possible to capture a more high-definition image.

In addition, the formed AR coating 402 is effective on the entire surface including the effective area and the non-effective area of the lens 401 including the protrusion 401a and the glass substrate 12 serving as the outer circumference thereof. By installing the area and the area in which the AR coating is not formed on at least a part of the glass substrate 12, it is possible to suppress the occurrence of cracks caused by expansion and contraction due to heating, such as a mounting reflow heat load or a reliability test. It becomes.

On the other hand, although the AR coating 402 has been described herein, other films may be used as long as the structure is formed on the surface of the lens 401, and for example, antireflection films such as Morse Eye are the same.

In addition, in the above, an example of a lens having the protrusion 401a has been described, but even if the lens does not have the protrusion 401a, the entire surface including the effective region and the non-effective region, and the outer circumference thereof On the glass substrate 12, an effective region and a region in which the AR coating is not formed in at least a part other than the glass substrate 12 may be provided. In other words, the AR coating 402 formed on the lens 401 may not be formed in a state that is continuously connected to the AR coating 402 formed on the side surface of the lens and on the glass substrate 12. Therefore, the lens 401 may be, for example, a two-stage side-type lens 401L, and the AR coating 402 formed on the lens 401 is formed on the side of the lens and on the glass substrate 12. When formed so as not to be formed in a state in which the AR coating 402 is continuously connected, the same effect is exhibited.

<21. 21st embodiment>

In the above, by preventing the AR coating 402 formed on the lens 401 from being formed in a state that is continuously connected to the AR coating 402 formed on the glass substrate 12, it is caused by heat during the mounting reflow heat load. An example of reducing the stress generated by the AR coating 402 due to expansion and contraction is described.

However, the light shielding film may be formed so as to cover the protruding portion 401a or the side surface of the lens 401 to suppress the occurrence of side flares.

That is, as shown in the uppermost part of FIG. 56, on the glass substrate 12, the entire range up to the height of the flat portion of the side surface of the lens 401 and the top surface of the protrusion 401a, that is, a range other than the effective area A light shielding film 521 may be formed in the.

56, the entire surface from the top of the glass substrate 12 to the side surface of the lens 401 and the planar portion of the upper surface of the protrusion 401a, that is, the surface other than the effective area The light shielding film 521 may be formed over the entire portion.

Further, as shown third from the top of FIG. 56, the light shielding film 521 may be formed on the side surface of the protruding portion 401a of the lens 401 from above the glass substrate 12.

In addition, as shown in the fourth from the top of FIG. 56, the light shielding film is in the range from the top of the glass substrate 12 to the predetermined height from the glass substrate 12 on the side surface of the protrusion 401a of the lens 401. (521) may be formed.

Further, as shown in the fifth from the top of FIG. 56, the light shielding film 521 may be formed only on the side surface of the protruding portion 401a of the lens 401.

Further, as shown from the top of FIG. 56 to the sixth, the light shielding film 521 may be formed in a range up to the highest positions of the two side surfaces of the two-stage side-type lens 401 on the glass substrate 12.

Further, as shown in the seventh from the top of Fig. 56, the entire surface of the two side surfaces of the two-stage side-type lens 401 on the glass substrate 12 to the highest position, and the outer circumference of the solid-state imaging device 11 The light shielding film 521 may be formed to cover the portion.

In either case, the light-shielding film 521 is formed by partial film formation, by lithography after film formation, by forming a film after forming a resist and lifting off the resist, or by lithography.

Further, a weir for forming a light-shielding film may be formed on the outer circumference of the two-stage side-type lens 401, and a light-shielding film 521 may be formed on the outer circumference of the two-stage lateral lens 401 and inside the weir.

That is, as shown in the top of Fig. 57, a weir 531 having the same height as the lens height is formed on the glass substrate 12 in the outer circumferential portion of the two-stage side-type lens 401, and After forming the light-shielding film 521 by lithography or coating on the outer periphery of the 401 and inside the weir 531, the light-shielding film 521, the lens 401, and the weir are polished by polishing such as CMP (Chemical Mechanical Polishing). You may try to match the height of (531).

In addition, as shown in the second stage of FIG. 57, a weir 531 having the same height as the lens height is formed on the glass substrate 12 in the outer peripheral portion of the two-stage side-type lens 401, The outer circumferential portion of the lens 401 and only by applying the material of the light-shielding film 521 to the inside of the weir 531, the height of the light-shielding film 521, the lens 401, and the weir 531, the light-shielding film 521 You may make it self-alignment with the material of.

Further, as shown in the third row of FIG. 57, a weir 531 having the same height as the lens height is formed on the glass substrate 12 in the outer peripheral portion of the two-stage side-type lens 401, and It is sufficient only to form the light shielding film 521 on the outer periphery of the lens 401 and inside the weir 531 by lithography.

In addition, as shown in the 4th stage of FIG. 57, on the glass substrate 12 in the outer peripheral part of the two-stage side-type lens 401, the boundary between the two-stage side-type lens 401 and the glass substrate 12 After forming a weir 531 to be connected, forming a light shielding film 521 by lithography or coating on the outer circumference of the two-stage side-type lens 401 and inside of the weir 531, chemical mechanical polishing (CMP), etc. The height of the light-shielding film 521, lens 401, and weir 531 may be adjusted by polishing.

In addition, as shown in the fifth stage of Fig. 57, on the glass substrate 12 in the outer peripheral portion of the two-stage side-type lens 401, the boundary between the two-stage side-type lens 401 and the glass substrate 12 is By forming a weir 531 so as to be connected, and applying the material of the light shielding film 521 on the outer periphery of the two-stage side-type lens 401 and inside the weir 531, the light shielding film 521, the lens 401, And the height of the weir 531 may be self-aligned by the material of the light shielding film 521.

Further, as shown in the sixth stage of Fig. 57, on the glass substrate 12 in the outer peripheral portion of the two-stage side-type lens 401, the boundary between the two-stage side-type lens 401 and the glass substrate 12 is The weir 531 may be formed so as to be connected, and the light shielding film 521 may be formed by lithography, which is the outer periphery of the two-stage side-type lens 401 and inside the weir 531.

In either case, since the light-shielding film is formed so as to cover the protruding portion 401a or the side surface of the lens 401, it becomes possible to suppress the occurrence of side flares.

On the other hand, in the above, an example in which a light-shielding film is formed on the outer circumference of the lens 401 has been described, but since light from the outer circumference of the lens 401 cannot penetrate, for example, a light-absorbing film is used instead of the light-shielding film. You may make it form.

<22. Application examples to electronic devices>

The above-described imaging device 1 of FIGS. 1, 4, 6 to 17 is, for example, an imaging device such as a digital still camera or a digital video camera, a mobile phone having an imaging function, or having an imaging function. It can be applied to various electronic devices such as other devices.

58 is a block diagram showing a configuration example of an imaging device as an electronic device to which the present technology is applied.

The imaging device 1001 shown in FIG. 58 includes an optical system 1002, a shutter device 1003, a solid-state imaging device 1004, a drive circuit 1005, a signal processing circuit 1006, a monitor 1007, and a memory. 1008) and can capture still images and moving pictures.

The optical system 1002 is configured with one or a plurality of lenses, guides light (incident light) from a subject to the solid-state imaging device 1004 and makes an image on the light-receiving surface of the solid-state imaging device 1004.

The shutter device 1003 is disposed between the optical system 1002 and the solid-state imaging element 1004, and controls the light irradiation period and the light-shielding period to the solid-state imaging element 1004 under control of the driving circuit 1005.

The solid-state imaging device 1004 is constituted by a package including the above-described solid-state imaging device. The solid-state imaging device 1004 accumulates signal charges for a predetermined period in accordance with the light formed on the light-receiving surface through the optical system 1002 and the shutter device 1003. The signal charges accumulated in the solid-state image sensor 1004 are transmitted in accordance with a driving signal (timing signal) supplied from the driving circuit 1005.

The drive circuit 1005 outputs a drive signal that controls the transfer operation of the solid-state image sensor 1004 and the shutter operation of the shutter device 1003, and drives the solid-state image sensor 1004 and the shutter device 1003.

The signal processing circuit 1006 performs various signal processing on the signal charges output from the solid-state imaging element 1004. An image (image data) obtained by signal processing by the signal processing circuit 1006 is supplied to the monitor 1007 and displayed, or is supplied to the memory 1008 and stored (recorded).

In the imaging device 1001 configured as described above, instead of the optical system 1002 and the solid-state imaging device 1004 described above, the imaging device 1 in any one of FIGS. 1, 9, 11 to 22 is provided. By applying, it becomes possible to suppress ghosts and flares caused by internal diffuse reflection while realizing downsizing and height reduction of the device configuration.

<23. Example of use of solid-state imaging device>

59 is a diagram showing an example of use in which the above-described imaging device 1 is used.

The above-described imaging device 1 can be used in various cases for sensing light such as visible light, infrared light, ultraviolet light, and X-ray as follows, for example.

·A device that captures images provided for appreciation, such as a digital camera or a portable device having a camera function

For safe driving such as automatic stop or recognition of the driver's condition, in-vehicle sensors for photographing the front, rear, surroundings, and inside of the vehicle, surveillance cameras for monitoring the driving vehicle or road, and distance between vehicles ( A device provided for traffic, such as a range sensor that performs a measurement

A device provided to home appliances such as TVs, refrigerators, air conditioners, etc. to capture a user's gesture and operate the device according to the gesture

Devices provided for medical or healthcare purposes, such as an endoscope or a device for photographing blood vessels by receiving infrared light

Devices provided for security such as security cameras for security purposes or cameras for person authentication

A device provided for cosmetic purposes, such as a skin measuring device for photographing the skin or a microscope for photographing the scalp

Devices provided for sports such as action cameras and wearable cameras for sports purposes, etc.

Devices provided for agriculture, such as cameras for monitoring the condition of fields or crops

<24. Examples of application to endoscopic surgery system>

The technology (this technology) according to the present disclosure can be applied to various products. For example, the technology according to the present disclosure may be applied to an endoscopic surgery system.

60 is a diagram illustrating an example of a schematic configuration of an endoscopic surgery system to which a technology (the present technology) related to the present disclosure may be applied.

In FIG. 60, a state in which the operator (doctor) 11131 is performing surgery on the patient 11132 on the patient bed 11133 using the endoscopic surgery system 11000 is shown. As shown, the endoscopic surgery system 11000 includes an endoscope 11100, other treatment tools 11110 such as a relief tube 11111 and an energy treatment device 11112, and a support arm that supports the endoscope 11100. It consists of a device 11120 and a cart 11200 equipped with various devices for surgery using an endoscope.

The endoscope 11100 includes a barrel 11101 into which an area of a predetermined length from the tip is inserted into the body cavity of the patient 11132, and a camera head 11102 connected to the base end of the barrel 11101. In the illustrated example, the endoscope 11100 configured as a so-called rigid mirror having a rigid barrel 11101 is shown, but the endoscope 11100 may be configured as a so-called ductile mirror having a flexible barrel.

An opening through which an objective lens is fitted is provided at the tip of the barrel 11101. A light source device 11203 is connected to the endoscope 11100, and light generated by the light source device 11203 is guided to the tip end of the barrel by a light guide extending into the interior of the barrel 11101, It is irradiated toward the object to be observed in the body cavity of the patient 11132 through the objective lens. In addition, the endoscope 11100 may be a direct microscope, or may be a stereoscope or a sideoscope.

An optical system and an imaging device are provided inside the camera head 11102, and reflected light (observation light) from an object to be observed is condensed by the optical system to the imaging device. Observation light is photoelectrically converted by the imaging device to generate an electric signal corresponding to the observation light, that is, an image signal corresponding to an observation image. The image signal is transmitted as RAW data to a camera control unit (CCU) 11201.

The CCU 11201 is constituted by a CPU (Central Processing Unit), a Graphics Processing Unit (GPU), or the like, and controls operations of the endoscope 11100 and the display device 11202 as a whole. Further, the CCU 11201 receives an image signal from the camera head 11102 and displays an image based on the image signal, for example, development processing (demosaic processing). Various image processing is performed.

The display device 11202 displays an image based on the image signal subjected to image processing by the CCU 11201 under control from the CCU 11201.

The light source device 11203 is constituted by a light source such as an LED (Light Emitting Diode), and supplies irradiation light when photographing a treatment unit or the like to the endoscope 11100.

The input device 11204 is an input interface to the endoscopic surgery system 11000. Through the input device 11204, the user can input various types of information and input instructions to the endoscopic surgery system 11000. For example, the user inputs an instruction to change the imaging conditions (type of irradiation light, magnification, focal length, etc.) by the endoscope 11100.

The treatment tool control device 11205 controls the driving of the energy treatment tool 11112 for cauterization of tissue, incision, or sealing of blood vessels. Relief device 11206, for the purpose of securing the field of view by the endoscope 11100 and securing the operator's work space, in order to swell the body cavity of the patient 11132, the gas into the body cavity through the relief tube 11111 Send The recorder 11207 is a device capable of recording various types of information related to surgery. The printer 11208 is a device capable of printing various types of information related to surgery in various formats such as text, images, or graphs.

Further, the light source device 11203 that supplies irradiation light to the endoscope 11100 when photographing a treatment unit can be configured from, for example, a white light source constituted by an LED, a laser light source, or a combination thereof. When a white light source is formed by a combination of RGB laser light sources, since the output intensity and output timing of each color (each wavelength) can be controlled with high accuracy, the white balance of the captured image can be adjusted in the light source device 11203 You can do it. Further, in this case, by irradiating the laser light from each of the RGB laser light sources to the object to be observed in time division, and controlling the driving of the imaging element of the camera head 11102 in synchronization with the irradiation timing, an image corresponding to each RGB is obtained. It is also possible to capture images in time division. According to this method, a color image can be obtained without installing a color filter in the image pickup device.

Further, the driving of the light source device 11203 may be controlled so that the intensity of the output light is changed every predetermined time. In synchronization with the timing of the change in the intensity of the light, by controlling the driving of the imaging element of the camera head 11102 to acquire an image by time division, and synthesizing the image, an image of a high dynamic range without so-called black defects and excessive exposure is obtained. Can be generated.

Further, the light source device 11203 may be configured to be able to supply light in a predetermined wavelength band corresponding to observation of special light. In special light observation, for example, by using the wavelength dependence of the absorption of light in the body tissue, by irradiating light in a narrow band compared to the irradiation light (i.e., white light) in normal observation, blood vessels in the mucous membrane surface layer A so-called narrow band imaging, in which a predetermined tissue such as the back is photographed with high contrast, is performed. Alternatively, in special light observation, fluorescence observation to obtain an image by fluorescence generated by irradiating excitation light may be performed. In fluorescence observation, the body tissue is irradiated with excitation light and fluorescence from the body tissue is observed (autofluorescence observation), or a reagent such as indocyanine green (ICG) is injected locally into the body tissue and the reagent is injected into the body tissue. It is possible to obtain a fluorescent image by irradiating excitation light corresponding to the fluorescent wavelength of. The light source device 11203 may be configured to be capable of supplying narrow-band light and/or excitation light corresponding to such special light observation.

61 is a block diagram showing an example of a functional configuration of the camera head 11102 and CCU 11201 shown in FIG. 60.

The camera head 11102 includes a lens unit 11401, an image pickup unit 11402, a drive unit 11403, a communication unit 11404, and a camera head control unit 11405. The CCU 11201 includes a communication unit 11411, an image processing unit 11412, and a control unit 11413. The camera head 11102 and the CCU 11201 are connected to each other so that communication is possible by a transmission cable 11400.

The lens unit 11401 is an optical system provided at a connection portion with the barrel 11101. The observation light received from the tip of the barrel 11101 is guided to the camera head 11102 and enters the lens unit 1141. The lens unit 11401 is configured by combining a plurality of lenses including a zoom lens and a focus lens.

The imaging unit 11402 is constituted by an imaging element. The number of imaging elements constituting the imaging unit 11402 may be one (so-called single plate type) or a plurality (so-called multiple plate type). When the imaging unit 11402 is configured in a multi-plate type, for example, image signals corresponding to each of RGB are generated by each imaging element, and a color image may be obtained by combining them. Alternatively, the imaging unit 11402 may be configured to have a pair of imaging elements for respectively acquiring right-eye and left-eye image signals corresponding to 3D (Dimensional) display. By performing the 3D display, the operator 11131 can more accurately grasp the depth of the living tissue in the treatment unit inward. In addition, when the imaging unit 11402 is configured in a multi-plate type, a plurality of lens units 11401 may be installed corresponding to each imaging element.

In addition, the imaging unit 11402 does not necessarily need to be provided on the camera head 11102. For example, the imaging unit 11402 may be provided inside the barrel 11101, just behind the objective lens.

The driving unit 11403 is constituted by an actuator and, under control from the camera head control unit 11405, moves the zoom lens and the focus lens of the lens unit 11401 along the optical axis by a predetermined distance. Thereby, the magnification and focus of the captured image by the imaging unit 11402 can be appropriately adjusted.

The communication unit 11404 is configured by a communication device for transmitting and receiving various types of information between the CCU 11201 and the CCU 11201. The communication unit 11404 transmits the image signal obtained from the imaging unit 11402 as RAW data to the CCU 11201 via the transmission cable 11400.

Further, the communication unit 11404 receives a control signal for controlling the driving of the camera head 11102 from the CCU 11201 and supplies it to the camera head control unit 11405. The control signal includes, for example, information that specifies the frame rate of the captured image, information that specifies the exposure value at the time of imaging, and/or information that specifies the magnification and focus of the captured image, etc. Includes information on conditions.

In addition, imaging conditions such as the frame rate, exposure value, magnification, and focus may be appropriately designated by the user, or may be automatically set by the control unit 11413 of the CCU 11201 based on the acquired image signal. In the latter case, a so-called AE (Auto Exposure) function, AF (Auto Focus) function, and AWB (Auto White Balance) function are mounted in the endoscope 11100.

The camera head control unit 11405 controls driving of the camera head 11102 based on a control signal from the CCU 11201 received through the communication unit 11404.

The communication unit 11411 is configured by a communication device for transmitting and receiving various types of information between the camera head 11102 and the camera head 11102. The communication unit 11411 receives an image signal transmitted from the camera head 11102 through a transmission cable 11400.

Further, the communication unit 11411 transmits a control signal for controlling the driving of the camera head 11102 to the camera head 11102. Image signals and control signals can be transmitted by electric communication or optical communication.

The image processing unit 1112 performs various image processing on the image signal which is RAW data transmitted from the camera head 11102.

The control unit 11413 performs various types of controls related to imaging of a treatment unit or the like by the endoscope 11100 and display of a captured image obtained by imaging of the treatment unit or the like. For example, the control unit 11413 generates a control signal for controlling driving of the camera head 11102.

Further, the control unit 11413 causes the display device 11202 to display an image captured by the treatment unit or the like on the basis of the image signal subjected to the image processing by the image processing unit 11412. At this time, the control unit 11413 may recognize various objects in the captured image using various image recognition techniques. For example, the control unit 11413 detects the shape or color of the edge of the object included in the captured image, thereby detecting treatment tools such as forceps, specific living parts, bleeding, mist when using the energy treatment tool 11112 (mist) etc. can be recognized. When displaying a captured image on the display device 11202, the control unit 1141 may use the recognition result to superimpose and display various types of surgery support information on the image of the treatment unit. The surgical support information is superimposed and presented to the operator 11131, thereby reducing the burden on the operator 11131 and enabling the operator 11131 to reliably proceed with the operation.

The transmission cable 11400 that connects the camera head 11102 and the CCU 11201 is an electric signal cable for communication of electric signals, an optical fiber for optical communication, or a composite cable thereof.

Here, in the illustrated example, communication was performed by wire using the transmission cable 11400, but communication between the camera head 11102 and the CCU 11201 may be performed wirelessly.

In the above, an example of an endoscopic surgery system to which the technology according to the present disclosure can be applied has been described. The technology according to the present disclosure is applied to, for example, the endoscope 11100, the camera head 11102 (the imaging unit 11402), the CCU 11201 (the image processing unit 11412), among the configurations described above. I can. Specifically, for example, the imaging device 1 of FIGS. 1, 9, and 11 to 22 can be applied to the lens unit 11401 and the imaging unit 10402. By applying the technology according to the present disclosure to the lens unit 11401 and the imaging unit 10402, it becomes possible to reduce the size of the device configuration and reduce the height, while suppressing the occurrence of flare or ghost caused by internal diffuse reflection. .

On the other hand, here, as an example, an endoscopic surgery system has been described, but the technology according to the present disclosure may be applied to other, for example, a microscopic surgery system.

<25. Application example to moving object>

The technology (this technology) related to the present disclosure can be applied to various products. For example, the technology related to the present disclosure may be realized as a device mounted on any type of moving object such as a vehicle, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, a personal mobility, an airplane, a drone, a ship, and a robot.

62 is a block diagram showing a schematic configuration example of a vehicle control system that is an example of a moving object control system to which the technology related to the present disclosure can be applied.

The vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001. In the example shown in Fig. 62, the vehicle control system 12000 includes a drive system control unit 12010, a body control unit 12020, an out-of-vehicle information detection unit 12030, an in-vehicle information detection unit 12040, and an integrated control unit ( 12050). Further, as a functional configuration of the integrated control unit 12050, a microcomputer 12051, an audio image output unit 12052, and an on-vehicle network I/F (Interface) 12053 are shown.

The drive system control unit 12010 controls the operation of devices related to the drive system of the vehicle according to various programs. For example, the drive system control unit 12010 may include a driving force generating device for generating a driving force of a vehicle such as an internal combustion engine or a driving motor, a driving force transmitting mechanism for transmitting driving force to a wheel, and a steering mechanism for adjusting the steering angle of the vehicle. , And a braking device that generates a braking force of the vehicle.

The body control unit 12020 controls the operation of various devices installed in the vehicle body according to various programs. For example, the body control unit 12020 is a keyless entry system, a smart key system, a power window device, or a control device for various lamps such as a head lamp, a back lamp, a brake lamp, a flasher or a fog lamp. Functions. In this case, a radio wave transmitted from a portable device replacing a key or signals of various switches may be input to the body control unit 12020. The body control unit 12020 receives inputs of these radio waves or signals, and controls a door lock device, a power window device, a lamp, and the like of the vehicle.

The out-of-vehicle information detection unit 12030 detects external information of a vehicle equipped with the vehicle control system 12000. For example, the imaging unit 12031 is connected to the out-of-vehicle information detection unit 12030. The out-of-vehicle information detection unit 12030 causes the image pickup unit 12031 to capture an image outside the vehicle, and receives the captured image. The out-of-vehicle information detection unit 12030 may perform object detection processing or distance detection processing, such as a person, a vehicle, an obstacle, a sign, or a character on a road, based on the received image.

The image pickup unit 12031 is an optical sensor that receives light and outputs an electric signal according to the received amount of the light. The imaging unit 12031 may output an electric signal as an image, or may output it as information of a distance range. Further, the light received by the imaging unit 12031 may be visible light or invisible light such as infrared light.

The in-vehicle information detection unit 12040 detects information in the vehicle. To the in-vehicle information detection unit 12040, for example, a driver state detection unit 12041 that detects a driver's state is connected. The driver state detection unit 12041 includes, for example, a camera that captures an image of a driver. The in-vehicle information detection unit 12040 may calculate the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041, or may determine whether the driver is asleep.

The microcomputer 12051 calculates a control target value of a driving force generating device, a steering mechanism, or a braking device based on the in-vehicle information acquired from the out-of-vehicle information detection unit 12030 or the in-vehicle information detection unit 12040, A control command may be output to the drive system control unit 12010. For example, the microcomputer 12051 includes an ADAS (Advanced Driver) including collision avoidance or shock mitigation of a vehicle, following driving based on an inter-vehicle distance, maintaining a vehicle speed, a collision warning of a vehicle, or a lane departure warning of a vehicle. Assistance System) can perform cooperative control for the purpose of realizing the function.

In addition, the microcomputer 12051 controls a driving force generating device, a steering mechanism, or a braking device, etc., based on the information around the vehicle obtained from the outside information detection unit 12030 or the in-vehicle information detection unit 12040, It is possible to perform cooperative control for the purpose of autonomous driving or the like that runs autonomously without operation.

Further, the microcomputer 12051 can output a control command to the body system control unit 12020 based on the information outside the vehicle acquired by the outside information detection unit 12030. For example, the microcomputer 12051 controls the headlamp according to the position of the preceding vehicle or the opposite vehicle detected by the out-of-vehicle information detection unit 12030 to prevent glare, such as switching a high beam to a low beam. It is possible to perform cooperative control for the purpose of doing so.

The audio image output unit 12052 transmits an output signal of at least one of an audio and an image to an output device capable of visually or aurally notifying information to the occupant of the vehicle or the outside of the vehicle. In the example of FIG. 62, an audio speaker 12061, a display unit 12062, and an instrument panel 12063 are exemplified as output devices. The display unit 12062 may include, for example, at least one of an on-board display and a head-up display.

63 is a diagram illustrating an example of an installation position of the imaging unit 12031.

In FIG. 63, the vehicle 12100 includes image pickup units 12101, 12102, 12103, 12104 and 12105 as the image pickup unit 12031.

The imaging units 12101, 12102, 12103, 12104, and 12105 are provided at positions such as the front nose of the vehicle 12100, the side mirrors, the rear bumper, the back door, and the upper part of the front glass in the vehicle interior. The image pickup unit 12101 provided in the front nose and the image pickup unit 12105 provided above the front glass in the vehicle interior mainly acquire an image in front of the vehicle 12100. The image pickup units 12102 and 12103 provided in the side mirrors mainly acquire images on the side of the vehicle 12100. The imaging unit 12104 provided in the rear bumper or the back door mainly acquires an image of the rear of the vehicle 12100. The front image acquired by the imaging units 12101 and 12105 is mainly used for detection of a preceding vehicle or pedestrian, an obstacle, a signal, a traffic sign, or a lane.

In addition, in FIG. 63, an example of the shooting range of the image pickup units 12101 to 12104 is shown. The imaging range 12111 represents the imaging range of the imaging unit 12101 provided in the front nose. The imaging ranges 12112 and 12113 represent the imaging ranges of the imaging units 12102 and 12103 installed on the side mirrors, respectively, and the imaging range 12114 is the imaging range of the imaging unit 12104 installed on the rear bumper or the back door. Show. For example, by superimposing image data captured by the image pickup units 12101 to 12104, it is possible to obtain a bird's eye view of the vehicle 12100 viewed from above.

At least one of the imaging units 12101 to 12104 may have a function of acquiring distance information. For example, at least one of the image pickup units 12101 to 12104 may be a stereo camera comprising a plurality of image pickup devices, or may be an image pickup device having pixels for phase difference detection.

For example, the microcomputer 12051, based on the distance information obtained from the imaging units 12101 to 12104, the distance to each three-dimensional object within the imaging range 12111 to 12114, and the temporal change of this distance (vehicle (Relative speed to (12100)), in particular, to the nearest three-dimensional object on the path of the vehicle 12100, a predetermined speed in the approximately same direction as the vehicle 12100 (for example, 0 km/h or more) A three-dimensional object traveling by can be extracted as a preceding vehicle. In addition, the microcomputer 12051 sets the inter-vehicle distance to be secured in advance between the preceding vehicle, and provides automatic brake control (including tracking stop control) and automatic acceleration control (including tracking start control), and the like. Can be done. In this way, it is possible to perform cooperative control for the purpose of autonomous driving or the like that runs autonomously without being operated by the driver.

For example, the microcomputer 12051 classifies the three-dimensional object data on the three-dimensional object into other three-dimensional objects such as two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, and telephone poles based on distance information obtained from the image pickup units 12101 to 12104. It can be extracted and used for automatic avoidance of obstacles. For example, the microcomputer 12051 identifies obstacles around the vehicle 12100 as an obstacle that can be visually recognized by a driver of the vehicle 12100 and an obstacle that is difficult to visually recognize. Further, the microcomputer 12051 determines a collision risk indicating a collision risk with each obstacle, and when the collision risk is higher than a set value and there is a possibility of collision, through the audio speaker 12061 or the display unit 12062 Driving assistance for collision avoidance can be provided by outputting an alarm to the driver or performing forced deceleration or avoidance steering through the drive system control unit 12010.

At least one of the imaging units 12101 to 12104 may be an infrared camera that detects infrared rays. For example, the microcomputer 12051 can recognize a pedestrian by determining whether or not a pedestrian exists in the image captured by the imaging units 12101 to 12104. The recognition of such a pedestrian is, for example, a procedure of extracting feature points in a captured image of the imaging units 12101 to 12104 as an infrared camera, and pattern matching processing on a series of feature points representing the outline of an object to determine whether it is a pedestrian or not. Is done by a procedure to determine When the microcomputer 12051 determines that a pedestrian exists in the image captured by the imaging units 12101 to 12104 and recognizes the pedestrian, the audio image output unit 12052 creates a rectangular outline for emphasis on the recognized pedestrian. The display unit 12062 is controlled so as to overlap display. Further, the audio image output unit 12052 may control the display unit 12062 to display an icon indicating a pedestrian or the like at a desired position.

In the above, an example of a vehicle control system to which the technology according to the present disclosure can be applied has been described. The technology according to the present disclosure can be applied to, for example, the imaging unit 12031 among the configurations described above. Specifically, for example, the imaging device 1 of FIGS. 1, 9, and 11 to 22 can be applied to the imaging unit 12031. By applying the technology according to the present disclosure to the imaging unit 12031, it becomes possible to reduce the size and height of the device configuration, and to suppress the occurrence of flares and ghosts caused by internal diffuse reflection.

On the other hand, the present disclosure can also take the following configuration.

<1> a solid-state imaging device that generates a pixel signal by photoelectric conversion according to the amount of incident light,

And a lens group comprising a plurality of lenses for focusing the incident light with respect to the light-receiving surface of the solid-state image sensor,

A lowermost layer lens constituting a lowermost layer with respect to the incident direction of the incident light among the lens groups is configured at the front end with respect to the direction in which the incident light is received,

The lowermost layer lens is an aspherical concave lens,

The thickness of the glass substrate installed on the solid-state image sensor and to which the lowermost layer lens is attached is thicker than the thinnest thickness of the lowermost layer lens, and the thickest thickness of the lowermost layer lens is thicker than the thickness of the glass substrate installed on the solid state image sensor. Imaging device.

<2> The imaging device according to <1>, wherein the volume of the lowermost layer lens is larger than the volume of the glass substrate.

<3> In the lowermost layer lens, an effective region for condensing the incident light to the solid-state image sensor is set,

The imaging device according to <1> or <2>, wherein the lowermost layer lens side surface serving as the outer peripheral portion of the effective region is formed in multiple stages.

<4> The effective area is disposed substantially at the center of the width of the lowermost layer lens in the vertical direction to the incident light, and at the outer periphery of the effective area, the incident light is not necessarily condensed to the solid-state image sensor. Is set,

The imaging device according to <3>, wherein the side surfaces of the lens of the lowermost layer serving as the non-effective regions are formed in multiple stages.

<5> In the cross-sectional shape passing through the center of the lowermost layer lens and passing through approximately the center of the short side or the long side of the lens, an inflection point is formed at a position corresponding to the side surface of the lowermost layer lens formed in the multiple stages. The described imaging device.

<6> The imaging device according to <5>, wherein the inflection point is formed at a position higher than a height at which the height from the glass substrate becomes the thinnest thickness of the lowermost layer lens.

<7> The imaging device according to <3>, wherein the difference in the average interplanar distance between the side surfaces of the lowermost layer lenses formed in multiple stages is greater than the thickness of the silicon substrate constituting the solid-state imaging device.

<8> In <3>, the difference in the average interplanar distance between the side surfaces of the lowermost layer lenses formed in multiple stages is greater than 1% with respect to the width of the area perpendicular to the incident direction of the incident light of the effective area of the lowermost layer lens. The described imaging device.

<9> The cross-sectional shape parallel to the incidence direction of the incident light on the outer circumferential side of the lowermost layer lens is at least any one of a vertical side, a tapered shape, a round shape, and a multistage side shape, in any one of <1> to <8>. The described imaging device.

<10> In any one of <1> to <9>, on the outer circumferential side surface of the lowermost layer lens, the thickness from the glass substrate is thicker than that of the lowermost layer lens, and a weir shaped protrusion having a flat portion is formed. The described imaging device.

1: imaging device
10: integrated component
11: (CPS structure) solid-state image sensor
11a: lower substrate (logic substrate)
11b: upper substrate (pixel sensor substrate)
11c: color filter
11d: on-chip lens
12: glass substrate
13: adhesive
14: IRCF (infrared light cut filter)
14': IRCF glass substrate
15: adhesive
16: lens group
17: circuit board
18: actuator
19: connector
20: spacer
21: pixel area
22: control circuit
23: logic circuit
32: pixel
51: photodiode
81: silicon substrate
83: wiring layer
86: insulating film
88: through silicon electrode
91: solder mask
101: silicon substrate
103: wiring layer
105: through-chip electrode
106: wiring for connection
109: silicon through electrode
131: lens
151: adhesive
171: lens group
191: (COB structure) solid-state image sensor
192: wire bond
211: infrared light blocking resin
231: glass substrate
231a: convex portion
231b: cavity (cavity)
251: coating agent having an infrared light blocking function
271: lens
271a: AR coating
291: lens
291a: anti-reflection processing unit
301: infrared light blocking lens
321: glass substrate
351: refractive film
371, 371-1 to 371-4, 381: additional film
401, 401A to 401U, 401AA to 401AH: lens
401a protrusion
40lb, 40lb': Hemming bottom
401d: hemming bottom portion
402, 402A to 402U, 402AA to 402AH, 402-P1 to 402-P5: AR coating
451: substrate
452, 452', 452", 452"': molded type
453: shading screen
461: ultraviolet light curing resin
461a: leachate
501, 501', 501A to 501K: alignment mark
521: shading screen
531: Weir

Claims (10)

A solid-state imaging device that generates a pixel signal by photoelectric conversion according to the amount of incident light,
And a lens group comprising a plurality of lenses for focusing the incident light with respect to the light-receiving surface of the solid-state image sensor,
A lowermost layer lens constituting a lowermost layer with respect to the incident direction of the incident light among the lens groups is configured at the front end with respect to the direction in which the incident light is received,
The lowermost layer lens is an aspherical concave lens,
The thickness of the glass substrate installed on the solid-state image sensor and to which the lowermost layer lens is attached is thicker than the thinnest thickness of the lowermost layer lens, and the thickest thickness of the lowermost layer lens is thicker than the thickness of the glass substrate installed on the solid state image sensor. , Imaging device. The method of claim 1,
An imaging device, wherein a volume of the lowermost layer lens is larger than a volume of the glass substrate. The method of claim 1,
In the lowermost layer lens, an effective area for condensing the incident light to the solid-state image sensor is set,
An imaging device in which side surfaces of the lens of the lowermost layer serving as the outer peripheral portion of the effective area are formed in multiple stages. The method of claim 3,
The effective area is disposed substantially in the center with respect to the width of the lowermost layer lens in the vertical direction with respect to the incident light, and in the outer periphery of the effective area, an ineffective area that does not necessarily condense the incident light to the solid-state image sensor is set. ,
The imaging device, wherein side surfaces of the lens of the lowermost layer serving as the non-effective regions are formed in multiple stages. The method of claim 4,
In a cross-sectional shape passing through the center of the lowermost layer lens and passing through approximately the center of the short side or the long side of the lowermost layer lens, an inflection point is formed at a position corresponding to a side surface of the lowermost layer lens formed in the multiple stages. The method of claim 5,
The inflection point is formed at a position higher than a height at which the height from the glass substrate becomes the thinnest thickness of the lowermost layer lens. The method of claim 3,
An imaging device, wherein a difference in distances between average surfaces of the side surfaces of the lowermost layer lenses formed in the multiple stages is greater than a thickness of a silicon substrate constituting the solid-state imaging device. The method of claim 3,
An image pickup device, wherein a difference in distance between average surfaces of the side surfaces of the lowermost layer lenses formed in the multiple stages is greater than 1% with respect to a width of an area perpendicular to the incident direction of the incident light of the effective area of the lowermost layer lens. The method of claim 1,
An image pickup device in which a cross-sectional shape parallel to the incident direction of the incident light at the outer peripheral side of the lowermost layer lens is at least one of a vertical side, a tapered shape, a round shape, and a multistage side shape. The method of claim 1,
An imaging device, wherein a bank-shaped protrusion having a flat portion is formed on an outer circumferential side surface of the lowermost layer lens from the glass substrate than the thickest thickness of the lowermost layer lens.

Images