KR20200143796A - Method for synthesizing thioaurones - Google Patents

Method for synthesizing thioaurones Download PDF

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KR20200143796A
KR20200143796A KR1020190071275A KR20190071275A KR20200143796A KR 20200143796 A KR20200143796 A KR 20200143796A KR 1020190071275 A KR1020190071275 A KR 1020190071275A KR 20190071275 A KR20190071275 A KR 20190071275A KR 20200143796 A KR20200143796 A KR 20200143796A
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formula
based compound
benzylthio
thioauron
phenyl
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이재인
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덕성여자대학교 산학협력단
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    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D333/00Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
    • C07D333/50Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom condensed with carbocyclic rings or ring systems
    • C07D333/52Benzo[b]thiophenes; Hydrogenated benzo[b]thiophenes
    • C07D333/62Benzo[b]thiophenes; Hydrogenated benzo[b]thiophenes with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to carbon atoms of the hetero ring
    • C07D333/64Oxygen atoms
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    • Y02P20/00Technologies relating to chemical industry
    • Y02P20/50Improvements relating to the production of bulk chemicals
    • Y02P20/55Design of synthesis routes, e.g. reducing the use of auxiliary or protecting groups

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Abstract

In an embodiment of the present invention, provided is a method for manufacturing a thioauron-based compound comprising the following steps: manufacturing a 2-(benzylthio)benzoic acid compound by conducting a reaction of thiosalicylic acid with a strong basic substance and benzyl halide; manufacturing N-methoxy-N-methyl-2-(benzylthio)benzamide by conducting a reaction of the 2-(benzylthio)benzoic acid compound with N-methoxy-N-methylcarbamoyl chloride; treating the N-methoxy-N-methyl-2-(benzylthio)benzamide with an aryl ethynyl salt to obtain 1-(2-benzylthio)phenyl-3-phenyl-2-propyn-1-one; and treating the 1-(2-benzylthio)phenyl-3-phenyl-2-propyn-1-one with an acid material. According to an embodiment of the present invention, a thioauron derivative having various structures can be manufactured at a high yield.

Description

싸이오아우론계 화합물의 제조방법 {METHOD FOR SYNTHESIZING THIOAURONES}Manufacturing method of thioauron compound {METHOD FOR SYNTHESIZING THIOAURONES}

본 발명은 싸이오아우론계(Thioaurones) 화합물을 합성하는 방법에 관한 것으로, 보다 구체적으로, 간단한 공정과 온화한 조건으로 싸이오살리실산(Thiosalicylic acid)으로부터 싸이오아우론계 화합물을 효율적으로 제조하는 방법에 관한 것이다.The present invention relates to a method for synthesizing a thiaurones compound, and more specifically, to a method for efficiently preparing a thiauron-based compound from thiosalicylic acid in a simple process and mild conditions will be.

싸이오아우론계 화합물은 아우론계(Aurones) 화합물에서 고리를 이루고 있는산소(O)원자가 황(S)원자로 치환된 것으로서, 광스위치(photoswitch) 특성, 암세포에 대한 세포독성 및 지방 친화성이 있으며, 염료에도 쓰여, 그 활용 범위가 넓은 중요한 화합물이다.A thio-auron-based compound is a ring in which an oxygen (O) atom forming a ring in an aurones compound is substituted with a sulfur (S) atom, and has a photoswitch property, cytotoxicity to cancer cells, and fat affinity. It is also used in dyes and is an important compound with a wide range of applications.

일반적으로, 싸이오아우론계 화합물에 대한 기존의 제조방법으로는, 벤조싸이오펜-3-온(Benzothiophen-3-one)과 아릴알데하이드(Arylaldehyde)의 축합반응에 의한 것, α-(아릴싸이오)신나믹산(α-(Arylthio)cinnamic acid)의 프리델-크래프트(Friedel-Craft) 아실화반응에 의한 것 및 2'-메틸싸이오챨콘(2'-Methylthiochalcone)의 분자 내 고리화 반응 등이 알려져 있다.In general, as a conventional manufacturing method for a thioauron-based compound, one by condensation reaction of benzothiophen-3-one and arylaldehyde, α-(arylthio )Cinnamic acid (α-(Arylthio) cinnamic acid) by the Friedel-Craft acylation reaction and the intramolecular cyclization of 2'-methylthiochalcone, etc. are known. have.

최근에는, 아릴알데하이드와 N, N-다이에틸-2-(메틸설퍼닐)아릴아마이드(N, N-diethyl-2-(methylsulfanyl)arylamide)을 LDA(Lithium diisopropylamide) 존재 하에서 싸이오아우론 화합물을 합성하는 방법과 2'-(4-메톡시벤질싸이오)-2-메틸설퍼닐챨콘(2'-(4-methoxybenzylthio)-2-methylsufinylchalcone)의 분자 내 고리화 반응을 통해 싸이오아우론계 화합물을 합성하는 방법이 연구되었다.Recently, arylaldehyde and N, N-diethyl-2-(methylsulfanyl)arylamide (N, N-diethyl-2-(methylsulfanyl)arylamide) were synthesized in the presence of LDA (Lithium diisopropylamide). And the intramolecular cyclization reaction of 2'-(4-methoxybenzylthio)-2-methylsulfurylchalcone) to obtain a thioauron compound. The method of synthesis was studied.

다만, 기존에 알려진 싸이오아우론 제조방법은 고리화 반응 시 위치선택성이 없다는 점, 수득률이 낮다는 점, 반응에 가혹한 조건을 요한다는 점, 최종생성물을 얻기 위한 단계가 복잡하여 효율이 떨어진다는 점과 같은 문제점을 가지고 있다.However, the previously known method for preparing thioauron does not have regioselectivity during cyclization, has low yield, requires harsh conditions for the reaction, and reduces efficiency due to complicated steps to obtain the final product. It has the same problem as

따라서, 본 발명의 목적은 온화한 조건(mild condition)에서 싸이오아우론계 화합물을 효율적으로 합성하는 방법을 제공하는 것이다.Accordingly, it is an object of the present invention to provide a method for efficiently synthesizing a thioauron-based compound under mild conditions.

또한, 본 발명의 또 다른 목적은 위치선택성이 우수하고, 황(S)원자가 보호화된 1-페닐-3-페닐알카인-1-온(1-Phenyl-3-phenylalkyn-1-one)의 고리화 제조방법을 제공하여, 목표 화합물의 수득률을 향상시키기 위함이다. In addition, another object of the present invention is excellent in regioselectivity and the sulfur (S) atom is protected 1-phenyl-3-phenylalkyn-1-one (1-Phenyl-3-phenylalkyn-1-one) It is to improve the yield of the target compound by providing a cyclization production method.

더불어, 반응 단계와 반응시간을 줄여서, 경제성을 향상시키기 위한 것이다.In addition, by reducing the reaction step and reaction time, it is to improve economic efficiency.

이러한 과제를 해결하기 위해, 본 발명의 일 실시예는, 싸이오살리실산을 강염기성 물질 및 벤질할라이드와 반응시켜 2-(벤질싸이오)벤조산 화합물을 제조하는 황(S) 보호기를 부착하는 단계; 상기 2-(벤질싸이오)벤조산 화합물을 N-메톡시-N-메틸카르바모일클로라이드와 반응시켜 N-메톡시-N-메틸-2-(벤질싸이오)벤즈아마이드를 제조하는 벤즈아마이드 생성 단계; 상기 N-메톡시-N-메틸-2-(벤질싸이오)벤즈아마이드를 아릴에틴일염으로 처리하여 1-(2-벤질싸이오)페닐-3-페닐-2-프로핀-1-온을 제조하는 친핵성 아실 치환 단계; 상기 1-(2-벤질싸이오)페닐-3-페닐-2-프로핀-1-온을 산 물질로 처리하는 고리화 단계;를 포함하는 싸이오아우론계 화합물의 제조방법을 제공한다.In order to solve such a problem, an embodiment of the present invention includes the steps of attaching a sulfur (S) protecting group to prepare a 2-(benzylthio)benzoic acid compound by reacting thiosalicylic acid with a strong basic substance and benzyl halide; The 2-(benzylthio)benzoic acid compound is reacted with N-methoxy-N-methylcarbamoyl chloride to produce benzamide to produce N-methoxy-N-methyl-2-(benzylthio)benzamide step; Treating the N-methoxy-N-methyl-2-(benzylthio)benzamide with an arylethynyl salt to give 1-(2-benzylthio)phenyl-3-phenyl-2-propyn-1-one Nucleophilic acyl substitution step to prepare; It provides a method for producing a thioauron-based compound comprising a cyclization step of treating the 1-(2-benzylthio)phenyl-3-phenyl-2-propyn-1-one with an acid material.

상기 싸이오아우론계 화합물은 하기 화학식 1로 표현되고,The thioauron-based compound is represented by the following formula (1),

[화학식 1][Formula 1]

Figure pat00001
Figure pat00001

여기서, R1 내지 R5는 각각 독립적으로 수소, 알킬기, 알콕시기, 및 할라이드로 이루어진 군 중에서 어느 하나이다.Here, R1 to R5 are each independently any one of hydrogen, an alkyl group, an alkoxy group, and a halide.

상기 아릴에틴일염은 하기 화학식 2로 표현되고,The arylethynyl salt is represented by the following formula (2),

[화학식 2][Formula 2]

Figure pat00002
Figure pat00002

여기서, R1 내지 R5는 각각 독립적으로 수소, 알킬기, 알콕시기, 및 할라이드로 이루어진 군 중에서 어느 하나이다.Here, R1 to R5 are each independently any one of hydrogen, an alkyl group, an alkoxy group, and a halide.

싸이오아우론계 화합물의 제조방법은 하기 반응식 1로 표현된다.The method for preparing the thioauron-based compound is represented by Scheme 1 below.

[반응식 1][Scheme 1]

Figure pat00003
Figure pat00003

상기 황(S) 보호기 부착 단계는 하기 반응식 2로 표현된다.The step of attaching the sulfur (S) protecting group is represented by Scheme 2 below.

[반응식 2][Scheme 2]

Figure pat00004
Figure pat00004

상기 벤즈아마이드 생성 단계는 하기 반응식 3으로 표현된다.The step of generating benzamide is represented by Scheme 3 below.

[반응식 3][Scheme 3]

Figure pat00005
Figure pat00005

상기 친핵성 아실 치환 단계는 하기 반응식 4로 표현된다.The nucleophilic acyl substitution step is represented by Scheme 4 below.

[반응식 4][Scheme 4]

Figure pat00006
Figure pat00006

상기 고리화 단계는 하기 반응식 5로 표현된다.The cyclization step is represented by Scheme 5 below.

[반응식 5][Scheme 5]

Figure pat00007
Figure pat00007

상기 강염기성 물질은 pKa가 16 이상인 물질을 포함한다.The strongly basic substance includes a substance having a pKa of 16 or higher.

아울러, 상기 강염기성 물질은 리튬다이아이소프로필아마이드, 나트륨아마이드, 유기계 염기 중에서 어느 하나이다.In addition, the strongly basic material is any one of lithium diisopropylamide, sodium amide, and organic base.

또한, 상기 강염기성 물질은 2당량 이상을 포함한다.In addition, the strongly basic substance contains 2 equivalents or more.

상기 산 물질은 pKa 4이하인 것으로 한다.The acid substance is assumed to have a pKa 4 or less.

여기서, 상기 산 물질은 포름산, 아세트산, 인산 및 트리플루오르아세트산 중에서 어느 하나이다.Here, the acid material is any one of formic acid, acetic acid, phosphoric acid and trifluoroacetic acid.

상기 싸이오아우론계 화합물은 하기 화학식 7 내지 15 중 어느 하나로 표현되는 싸이오아우론계 화합물의 제조방법이다.The thioauron-based compound is a method of preparing a thioauron-based compound represented by any one of the following Chemical Formulas 7 to 15.

[화학식 7][Formula 7]

Figure pat00008
Figure pat00008

[화학식 8][Formula 8]

Figure pat00009
Figure pat00009

[화학식 9][Formula 9]

Figure pat00010
Figure pat00010

[화학식 10][Formula 10]

Figure pat00011
Figure pat00011

[화학식 11][Formula 11]

Figure pat00012
Figure pat00012

[화학식 12][Formula 12]

Figure pat00013
Figure pat00013

[화학식 13][Formula 13]

Figure pat00014
Figure pat00014

[화학식 14][Formula 14]

Figure pat00015
Figure pat00015

[화학식 15][Formula 15]

Figure pat00016
Figure pat00016

본 발명의 일 실시예에 따르면, 위치선택성이 우수하고, 온화한 반응조건에서 싸이오아우론계 화합물을 제조하는 방법을 제공하여 대상 화합물을 효율적으로 합성될 수 있다. 또한, 본 발명의 일 실시예에 따르면, 최종 생성물 합성까지의 반응 단계를 줄일 수 있다. 또한, 본 발명의 일 실시예에 따르면, 싸이오아우론계 화합물의 수득률을 향상시킬 수 있다. 특히, 본 발명의 일 실시예에 따르면, B-벤젠고리(화학식 1에 표시)에 필요한 치환기를 붙일 수 있다.According to an embodiment of the present invention, a target compound can be efficiently synthesized by providing a method for preparing a thioauron-based compound under a mild reaction condition and excellent regioselectivity. In addition, according to an embodiment of the present invention, it is possible to reduce the reaction steps until synthesis of the final product. In addition, according to an embodiment of the present invention, it is possible to improve the yield of the thioauron-based compound. In particular, according to an embodiment of the present invention, a necessary substituent may be attached to the B-benzene ring (shown in Chemical Formula 1).

본 발명의 일 실시예에 따르면, 다양한 구조를 갖는 싸이오아우론 유도체가 높은 수득률로 제조될 수 있다.According to an embodiment of the present invention, thio-auron derivatives having various structures can be prepared in high yield.

본 발명의 이점 및 특징, 그리고 그것들을 달성하는 방법은 후술되어 있는 실시예들을 참조하면 명확해질 것이다. 그러나 본 발명은 이하에서 개시되는 실시예들에 한정되는 것이 아니라 서로 다른 다양한 형태로 구현될 것이며, 실시예들은 단지 본 발명의 개시가 완전하도록 하며, 본 발명이 속하는 기술 분야에서 통상의 지식을 가진 자에게 발명의 범주를 완전하게 알려주기 위해 제공되는 것이다. 본 발명의 범위는 청구항의 범주에 의해 정의될 뿐이다. Advantages and features of the present invention, and a method of achieving them will become apparent with reference to embodiments described below. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various forms different from each other, and the embodiments merely make the disclosure of the present invention complete, and those skilled in the art to which the present invention pertains. It is provided to fully inform the person of the scope of the invention. The scope of the invention is only defined by the scope of the claims.

시간 관계에 대한 설명에 있어서, 예를 들어, '~후에', '~에 이어서', '~다음에', '~전에' 등으로 시간적 선후 관계가 설명되는 경우, '바로' 또는 '직접'이 사용되지 않는 이상 연속적이지 않은 경우도 포함할 수 있다.In the description of the temporal relationship, for example, when the temporal predecessor relationship is described as'after','following','after after','before', etc.,'right' or'direct' It may also include cases that are not continuous unless this is used.

이하, 실시예를 참조하여 본 발명을 상세히 설명한다.Hereinafter, the present invention will be described in detail with reference to Examples.

본 발명의 일 실시예에 따르면, 싸이오살리실산으로부터 4단계 반응에 의해 하기 싸이오아우론계 화합물을 제조할 수 있다.According to an embodiment of the present invention, the following thioauron-based compound may be prepared from thiosalicylic acid by a four-step reaction.

[화학식 1][Formula 1]

Figure pat00017
Figure pat00017

구체적으로, 본 발명의 일 실시예에 따른 싸이오아우론계 화합물의 제조방법은, 싸이오살리실산(thiosalicylic acid)을 강염기성 물질(strong base) 및 벤질할라이드(benzyl halide)와 반응시켜 2-(벤질싸이오)벤조산(2-(benzylthio)benzoic acid) 화합물을 제조하는 황(S) 보호기 부착 단계, 황 보호기 부착 단계에서 제조된 2-(벤질싸이오)벤조산 화합물을 N-메톡시-N-메틸카르바모일클로라이드(N-methoxy-N-methylcarbamoylchloride)와 반응시켜 N-메톡시-N-메틸-2-(벤질싸이오)벤즈아마이드(N-Methoxy-N-methyl-2-(benzylthio)benzamide)를 제조하는 벤즈아마이드 생성 단계, 이전 단계에서 제조된 N-메톡시-N-메틸-2-(벤질싸이오)벤즈아마이드를 아릴에틴일염(arylethynyl salt)으로 처리하여 1-(2-벤질싸이오)페닐-3-페닐-2-프로핀-1-온(1-(2-benzylthio)phenyl-3-phenyl-2-propyn-1-one)을 제조하는 친핵성 아실 치환 단계, 전 단계에서 제조된 1-(2-벤질싸이오)페닐-3-페닐-2-프로핀-1-온을 산 물질로 처리하는 고리화 단계를 포함한다.Specifically, in the method for preparing a thioauron-based compound according to an embodiment of the present invention, a thiosalicylic acid is reacted with a strong base and a benzyl halide to react 2-(benzyl halide). The 2-(benzylthio)benzoic acid compound prepared in the step of attaching a sulfur (S) protecting group and attaching a sulfur protecting group to prepare a thio) benzoic acid (2-(benzylthio) benzoic acid) compound is N-methoxy-N-methyl N-methoxy-N-methyl-2-(benzylthio)benzamide by reacting with N-methoxy-N-methylcarbamoylchloride (N-Methoxy-N-methyl-2-(benzylthio)benzamide) Benzamide production step to prepare, N-methoxy-N-methyl-2-(benzylthio)benzamide prepared in the previous step was treated with an arylethynyl salt to treat 1-(2-benzylthio) ) Phenyl-3-phenyl-2-propyn-1-one (1- (2-benzylthio) phenyl-3-phenyl-2-propyn-1-one) to prepare a nucleophilic acyl substitution step, prepared in the previous step And a cyclization step of treating the resulting 1-(2-benzylthio)phenyl-3-phenyl-2-propyn-1-one with an acid material.

상기 설명한 싸이오아우론계 화합물 제조방법의 모든 단계는 개략적으로 하기 반응식 1과 같이 표현될 수 있다.All steps of the above-described method for preparing a thioauron-based compound can be schematically expressed as in Scheme 1 below.

[반응식 1][Scheme 1]

Figure pat00018
Figure pat00018

먼저 황(S) 보호기 부착 단계는 간략하게 하기 반응식 2로 표현될 수 있고, 예상 가능한 여러 메커니즘 중 하나로 하기 반응식 2-1로 표현될 수도 있을 것이다.First, the step of attaching a sulfur (S) protecting group may be briefly represented by Scheme 2 below, and may be represented by Scheme 2-1 below as one of several predictable mechanisms.

[반응식 2][Scheme 2]

Figure pat00019
Figure pat00019

[반응식 2-1][Scheme 2-1]

Figure pat00020
Figure pat00020

들어가기 전에 앞서 황 보호기 부착 단계는 편의상 A단계라 한다. 구체적으로, A 단계는 다시 세분화하여, 싸이오살리실산(화학식 3)과 2당량의 강염기와 반응시켜 다이에나이온(dianion) 형태의 중간체(화학식 3-1)를 형성하는 A-1단계 및 이에 벤질할라이드(benzyl halide)를 추가하여 2-(벤질싸이오)벤조산(화학식 4)을 제조하는 A-2단계로 구분된다.Before entering, the step of attaching the sulfur protector is referred to as step A for convenience. Specifically, step A is further subdivided and reacted with thiosalicylic acid (Chemical Formula 3) with 2 equivalents of strong base to form an intermediate in the form of dianion (Chemical Formula 3-1) and benzyl halide thereto. It is divided into A-2 step of preparing 2-(benzylthio)benzoic acid (Chemical Formula 4) by adding (benzyl halide).

A 단계에서 추가된 벤질기는 상기 화학식 4와 같이 황(S) 원자와 결합하여, 황 원자가 이후 고리화 단계에서 고리화 반응을 하기 전까지 다른 반응이 일어나는 것을 방지하는 보호기 역할을 한다.The benzyl group added in step A serves as a protecting group to prevent other reactions from occurring until the sulfur atom undergoes a cyclization reaction in the subsequent cyclization step by bonding with the sulfur (S) atom as shown in Formula 4 above.

본 발명의 일 실시예에 따르면, A-1단계에서 사용되는 강염기는 카르복실기 및 싸이올기의 수소 양이온(H+)를 제거할 수 있는 정도의 강염기(pKa가 16 이상인 화합물의 짝염기)이면 어느 것이든 가능하다. 대표적으로, 사용 가능한 염기는 리튬다이아이소프로필아마이드(LDA, Lithium diisopropylamide), 나트륨아마이드(NaNH2)와 같은 유기계 염기성 물질 중 어느 하나가 있다.According to an embodiment of the present invention, any strong base used in step A-1 is a strong base capable of removing the hydrogen cation (H + ) of the carboxyl group and the thiol group (conjugate base of a compound having a pKa of 16 or more). It is possible. Typically, the usable base is any one of organic basic substances such as lithium diisopropylamide (LDA) and sodium amide (NaNH 2 ).

A-2단계의 벤질할라이드 역시, 치환기(X)가 할라이드(halide)계뿐만 아니라, 일반적으로 좋은 이탈기(good leaving group)로 여겨지는 것이면 어떤 것이든 가능하다. 좋은 이탈기에는 염소(Cl), 브롬(Br), 요오드(I), 토실기(TsO-, p-toluenesulfonate), 메실기(MsO-, methanesulfonate), 카르복실기(R-COO-)와 같이 이탈 후에 안정한 이온 또는 화합물을 형성하는 것이 있다.The benzyl halide of step A-2 may also be any substituent (X) as long as it is not only a halide-based, but is generally considered a good leaving group. Good leaving groups include chlorine (Cl), bromine (Br), iodine (I), tosyl groups (TsO-, p-toluenesulfonate), mesyl groups (MsO-, methanesulfonate), carboxyl groups (R-COO-). Some form stable ions or compounds.

벤즈아마이드 생성 단계는 간략하게 하기 반응식 3로 표현될 수 있다.The step of generating benzamide can be briefly represented by Scheme 3 below.

[반응식 3][Scheme 3]

Figure pat00021
Figure pat00021

벤즈아마이드 생성 단계는 편의상 B단계라 한다. 구체적으로, B단계에서는, A단계에서 제조된 2-(벤질싸이오)벤조산(화학식 4)에 N-메톡시-N-메틸카르바모일클로라이드, 트리에틸아민(Triethylamine)을 반응시켜 N-메톡시-N-메틸-2-(벤질싸이오)벤즈아마이드(화학식 5)를 제조한다.The benzamide production step is referred to as B step for convenience. Specifically, in step B, N-methoxy-N-methylcarbamoyl chloride and triethylamine were reacted with 2-(benzylthio)benzoic acid (Chemical Formula 4) prepared in step A to react N-methylamine. Toxic-N-methyl-2-(benzylthio)benzamide (Chemical Formula 5) was prepared.

친핵성 아실 치환 단계는 간략하게 하기 반응식 4로 표현될 수 있고, 예상 가능한 여러 메커니즘 중 하나로 하기 반응식 4-1로 표현될 수도 있을 것이다.The nucleophilic acyl substitution step may be briefly represented by Scheme 4 below, and may be represented by Scheme 4-1 below as one of several predictable mechanisms.

[반응식 4][Scheme 4]

Figure pat00022
Figure pat00022

[반응식 4-1][Reaction Scheme 4-1]

Figure pat00023
Figure pat00023

친핵성 아실 치환 단계는 편의상 C단계라 한다. 구체적으로, C단계에서는, B단계에서 제조된 N-메톡시-N-메틸-2-(벤질싸이오)벤즈아마이드(화학식 5)에 아릴에틴일염(arylethynyl salt)을 첨가하면, 친핵성 아실 치환반응(nucleophilic acyl substitution)이 진행된다. 본 반응은 친전자성이 큰 아실기 탄소에 친핵성이 큰 아릴에틴일염이 첨가되어 중간체(화학식 5-1)를 형성하고, 아민기(-N(OMe)(Me))가 이탈하게 되어 1-(2-벤질싸이오)페닐-3-페닐-2-프로핀-1-온(화학식 6)이 생성된다. 산도가 강한 수소(H)가 없어, 친핵체이면서 강염기인 아릴에틴일염은 산-염기 반응이 아닌, 친핵성 아실 치환반응으로 진행된다. 이때, A단계에서 추가된 황 보호기에 의해 다른 위치에서 반응이 일어나는 것을 방지한다.The nucleophilic acyl substitution step is referred to as step C for convenience. Specifically, in step C, when an arylethynyl salt is added to N-methoxy-N-methyl-2-(benzylthio)benzamide (formula 5) prepared in step B, nucleophilic acyl substitution The reaction (nucleophilic acyl substitution) proceeds. In this reaction, an arylethynyl salt having a large nucleophilicity is added to an acyl group having a large electrophilic carbon to form an intermediate (Chemical Formula 5-1), and an amine group (-N(OMe)(Me)) is released. -(2-Benzylthio)phenyl-3-phenyl-2-propyn-1-one (Formula 6) is produced. Since there is no hydrogen (H) having strong acidity, arylethynyl salt, which is a nucleophile and a strong base, proceeds as a nucleophilic acyl substitution reaction rather than an acid-base reaction. At this time, the reaction at other positions is prevented by the sulfur protecting group added in step A.

본 발명의 일 실시예에 따르면, 아릴에틴일염은 아릴에틴일리튬이 사용될 수 있고, 친핵성이 큰 아릴에틴일염이면 어느 것이든 가능하다. 아릴에틴일염은 하기 화학식 2로 표현된다.According to an exemplary embodiment of the present invention, arylethynyl lithium may be used as the arylethynyl salt, and any arylethynyl salt having high nucleophilicity may be used. The arylethynyl salt is represented by the following formula (2).

[화학식 2][Formula 2]

Figure pat00024
Figure pat00024

이때, 아릴에틴일염의 치환기(R1 내지 R5)는 각각 독립적으로 수소(H), 알킬기(Alkyl group), 알콕시기(Alkoxyl group), 할라이드(halide)로 이루어진 군 중에서 어느 하나이다. 아릴에틴일염의 치환기의 개수, 종류 및 위치에 따라 약간의 차이는 있지만, 전자끄는기(electron-withdrawing group) 또는 전자주는기(electron-donating group) 무관하게 C단계 및 이후 단계에서 원활한 진행이 가능하다. 아릴에틴일염의 치환기 R1 내지 R5는 상기 화학식 1의 치환기 R1 내지 R5와 각각 대응하여 동일하다.At this time, the substituents (R1 to R5) of the arylethynyl salt are each independently hydrogen (H), an alkyl group (Alkyl group), an alkoxy group (Alkoxyl group), a halide (halide) is any one of the group consisting of. Although there are slight differences depending on the number, type and position of the substituents of the arylethynyl salt, smooth progress is possible in step C and subsequent steps regardless of electron-withdrawing group or electron-donating group. Do. Substituents R1 to R5 of the arylethynyl salt are the same as the substituents R1 to R5 of Formula 1, respectively.

고리화 단계는 간략하게 하기 반응식 5로 표현될 수 있다.The cyclization step can be briefly represented by Scheme 5 below.

[반응식 5][Scheme 5]

Figure pat00025
Figure pat00025

고리화 단계는 편의상 D단계라 한다. 구체적으로, D단계에서는, C단계에서 제조된 1-(2-벤질싸이오)페닐-3-페닐-2-프로핀-1-온(화학식 6)에 산 물질/THF (1/1, v/v)를 첨가하면 탈벤질기화(debenzylation) 및 분자 내 고리화 반응(cyclization)이 진행되어, 싸이오아우론계 화합물(화학식 1)이 제조된다.The cyclization step is referred to as D step for convenience. Specifically, in step D, 1-(2-benzylthio)phenyl-3-phenyl-2-propyn-1-one prepared in step C/THF (1/1, v When /v) is added, debenzylation and intramolecular cyclization proceed, thereby preparing a thioauron-based compound (Chemical Formula 1).

황의 보호기인 벤질기는 산의 첨가로 이탈되고(debenzylation), 황은 C≡C 삼중결합과 고리화 반응하여, 고리를 형성한다. 고리 형성 시에는 6-엔도 고리화(6-endo cyclization)보다 5-엑소 고리화(5-exo cyclization)가 위치선택적으로 일어난다.The benzyl group, which is a protecting group of sulfur, is debenzylated by the addition of an acid, and sulfur is cyclized with a C≡C triple bond to form a ring. During ring formation, 5-exo cyclization occurs regioselectively rather than 6-endo cyclization.

또한, B-벤젠고리와 카보닐기(carbonyl group)의 입체적 반발(steric repulsion)이 강하여, 엑소싸이클릭(exo-cyclic) C=C 이중결합(exocyclic double bond)은 (Z)-구조((Z)-form)가 (E)-구조((E)-form)에 비해 더 선호된다.In addition, since the steric repulsion of the B-benzene ring and the carbonyl group is strong, the exo-cyclic C=C double bond is a (Z)-structure ((Z )-form) is more preferred over the (E)-structure ((E)-form).

반응식 5에서, R1, R2, R3, R4 및 R5는 상기 C단계에서 설명한 바와 동일하게, R1 내지 R5는 각각 독립적으로 수소(H), 알킬기(Alkyl group), 알콕시기(Alkoxyl group), 할라이드(halide)로 이루어진 군 중에서 어느 하나이다.In Scheme 5, R1, R2, R3, R4, and R5 are the same as described in step C, and R1 to R5 are each independently hydrogen (H), an alkyl group, an alkoxy group (Alkoxyl group), a halide ( halide).

본 발명의 일 실시예에서 산 물질은 일반적으로 pKa 4이하의 산이면 어느 것이든 가능하다. 대표적으로, 포름산(Formic acid), 아세트산(acetic acid), 인산(H3PO4), 트리플루오르아세트산(trifluoroacetic acid)을 사용할 수 있다.In one embodiment of the present invention, the acid material is generally any acid having pKa 4 or less. Typically, formic acid (Formic acid), acetic acid (acetic acid), phosphoric acid (H 3 PO 4 ), trifluoroacetic acid (trifluoroacetic acid) can be used.

본 발명의 일 실시예에 따른 제조방법으로 제조되는 싸이오아우론계 화합물은 하기 화학식 7 내지 15 중 어느 하나로 표현될 수 있다. 다만, 제시된 화합물은 본 발명에 의한 예들에 불과하고, 본 발명을 제시된 화합물로 한정하는 것은 아니다.The thioauron-based compound prepared by the manufacturing method according to an embodiment of the present invention may be represented by any one of the following Chemical Formulas 7 to 15. However, the presented compounds are only examples according to the present invention, and the present invention is not limited to the presented compounds.

[화학식 7][Formula 7]

Figure pat00026
Figure pat00026

[화학식 8][Formula 8]

Figure pat00027
Figure pat00027

[화학식 9][Formula 9]

Figure pat00028
Figure pat00028

[화학식 10][Formula 10]

Figure pat00029
Figure pat00029

[화학식 11][Formula 11]

Figure pat00030
Figure pat00030

[화학식 12][Formula 12]

Figure pat00031
Figure pat00031

[화학식 13][Formula 13]

Figure pat00032
Figure pat00032

[화학식 14][Formula 14]

Figure pat00033
Figure pat00033

[화학식 15][Formula 15]

Figure pat00034
Figure pat00034

이하 구체적인 제조예를 참조하여 본 발명을 보다 상세히 설명한다.Hereinafter, the present invention will be described in more detail with reference to specific preparation examples.

제조예에서는, THF 용매에서 싸이오살리실산과 2당량의 LDA(Lithium diisopropylamide)를 반응시킨 후 벤질클로라이드(benzyl chloride)를 추가하여 2-(벤질싸이오)벤조산을 합성할 수 있다. 합성된 화합물과 N-메톡시-N-메틸카르바모일클로라이드, 트리에틸아민(Triethylamine)을 반응시켜 N-메톡시-N-메틸-2-(벤질싸이오)벤즈아마이드를 합성할 수 있다. 이에 다시, THF를 용매로, 아릴에틴일리튬(arylethynyllithiums)을 첨가하면, 친핵성 아실 치환반응(nucleophilic acyl substitution)이 일어나 1-(2-벤질싸이오)페닐-3-페닐-2-프로핀-1-온을 합성할 수 있다. 이와 같이 얻어진 화합물을 포름산(Formic acid)/THF (1/1, v/v)로 반응하면 싸이오아우론계 화합물을 온화한 조건에서 높은 수득률로 합성할 수 있다.In the preparation example, 2-(benzylthio)benzoic acid can be synthesized by reacting thiosalicylic acid with 2 equivalents of LDA (Lithium diisopropylamide) in a THF solvent, and then adding benzyl chloride. N-methoxy-N-methyl-2-(benzylthio)benzamide can be synthesized by reacting the synthesized compound with N-methoxy-N-methylcarbamoyl chloride and triethylamine. Then, when THF is used as a solvent and arylethynyllithiums are added, nucleophilic acyl substitution occurs, 1-(2-benzylthio)phenyl-3-phenyl-2-propine. 1-one can be synthesized. When the obtained compound is reacted with formic acid/THF (1/1, v/v), a thioauron-based compound can be synthesized in a high yield under mild conditions.

각 단계를 보다 구체적으로 설명하면 다음과 같다.Each step will be described in more detail as follows.

(1) 황 보호기 부착 단계 (A단계)(1) Step of attaching sulfur protector (Step A)

본 발명의 일 제조예에 따르면, 싸이오살리실산과 2당량의 LDA(Lithium diisopropylamide)와 반응시켜 다이에나이온(dianion) 형태의 중간체를 형성한다. 그리고, 벤질클로라이드(benzyl chloride)를 추가하면 황(S)원자에 벤질기가 첨가된다. 반응이 모두 진행하여 평형상태 도달 후에 1N 염산(HCl)로 마무리하면 2-(벤질싸이오)벤조산을 제조된다. According to a preparation example of the present invention, a dianion-type intermediate is formed by reacting thiosalicylic acid with 2 equivalents of LDA (Lithium diisopropylamide). And, when benzyl chloride is added, a benzyl group is added to the sulfur (S) atom. After all the reaction proceeds and equilibrium is reached, 2-(benzylthio)benzoic acid is prepared by finishing with 1N hydrochloric acid (HCl).

본 단계 반응에서 사용되는 강염기는 LDA외에 다른 것도 사용이 가능하나, 싸이올기 및 카르복실기의 수소를 뗄 수 있을 정도의 충분한 염기도가 필요하다. 따라서, 강염기의 염기도는 pKa가 16 이상인 화합물의 짝염기를 사용하여야 유리하게 진행한다.The strong base used in this step reaction can be used in addition to LDA, but sufficient basicity is required to remove the hydrogen of the thiol group and the carboxyl group. Therefore, the basicity of a strong base proceeds advantageously only when a conjugate base of a compound having a pKa of 16 or more is used.

하기 표 1은 본 단계의 중간체 형성까지의 반응시간을 0 oC, THF(tetrahydrofuran)을 용매로 2당량의 LDA를 사용한 것과 152 oC, DMF을 용매로 탄산칼륨(K2CO3)을 사용한 것을 비교한 것이다.Table 1 below shows the reaction time until the intermediate formation of this step is 0 o C, THF (tetrahydrofuran) was used as a solvent, 2 equivalents of LDA, and 152 o C, DMF was used as a solvent, potassium carbonate (K 2 CO 3 ). It was a comparison.

구분division 염기/용매Base/solvent 반응온도 (oC)Reaction temperature ( o C) 반응시간 (h)Reaction time (h) 조건 1Condition 1 LDA/THFLDA/THF 0 oC0 o C 0.5h0.5h 조건 2Condition 2 K2CO3/DMFK 2 CO 3 /DMF 152 oC152 o C 22h22h

탄산칼륨을 염기로 사용한 것은 반응시간이 22h 소요되는 것에 반해서, LDA를 0.5h에 불과하여 빠른 반응속도를 확인할 수 있다. 또한, 반응온도도 온화한 조건에서 가능하다.Using potassium carbonate as a base takes a reaction time of 22 h, whereas LDA is only 0.5 h, so a fast reaction rate can be confirmed. In addition, the reaction temperature is also possible under mild conditions.

다시, 상온(room temperature)에서 다이에나이온 중간체에 벤질클로라이드를 반응시켜 2-(벤질싸이오)벤조산을 제조하는 것까지 소요된 시간은 4h이고, 최종 수득률은 89%이다.Again, the time taken to prepare 2-(benzylthio)benzoic acid by reacting benzyl chloride with the dianion intermediate at room temperature was 4h, and the final yield was 89%.

(2) 벤즈아마이드 생성 단계(B단계)(2) Benzamide production step (B step)

A단계에서 제조된 2-(벤질싸이오)벤조산에 N-메톡시-N-메틸카르바모일클로라이드, 트리에틸아민(Triethylamine)을 반응시켜 N-메톡시-N-메틸-2-(벤질싸이오)벤즈아마이드를 제조한다. 이때, 4-(다이메틸아미노)피리딘(DMAP, 4-(dimethylamino)pyridine) 0.05당량 포함된 아세토나이트릴(CH3CN)을 용매로 한다. 기존에 2단계의 반응으로 진행되던 것이 B단계에 의하면, 한번의 반응으로 N-메톡시-N-메틸-2-(벤질싸이오)벤즈아마이드를 제조할 수 있다. 반응시간은 상온 조건에서 1h 가량 소요되고, 최종 수득률은 평균 81%이다.N-methoxy-N-methylcarbamoyl chloride and triethylamine were reacted with 2-(benzylthio)benzoic acid prepared in step A to obtain N-methoxy-N-methyl-2-(benzylthio). O) Benzamide is manufactured. In this case, acetonitrile (CH 3 CN) containing 0.05 equivalents of 4-(dimethylamino) pyridine (DMAP, 4-(dimethylamino) pyridine) is used as a solvent. According to step B, which was previously performed as a two-step reaction, N-methoxy-N-methyl-2-(benzylthio)benzamide can be prepared in one reaction. The reaction time takes about 1 h under room temperature conditions, and the final yield is an average of 81%.

(3) 친핵성 아실 치환 단계(C단계)(3) nucleophilic acyl substitution step (step C)

THF을 용매로, 첨가한 아릴에틴일리튬(arylethynyllithiums)에 의해 아마이드(amide)의 치환기가 아실 치환(acyl substitution)되고, 산 처리(work-up)하여 1-(2-벤질싸이오)페닐-3-페닐-2-프로핀-1-온가 만들어진다.The substituent of the amide is acyl substituted by THF as a solvent and added arylethynyllithiums, and 1-(2-benzylthio)phenyl- 3-phenyl-2-propyn-1-one is made.

본 단계 반응은 0 oC 내지 상온에서 진행하여, 산 처리(work-up) 및 실리카겔 칼럼 크로마토그래피(silica gel column chromatography)에 의한 분리까지 1h 안으로 완료된다. 이때, 수득률은 88-94%이다.The reaction in this step proceeds at 0 o C to room temperature, and is completed within 1 h until separation by acid treatment (work-up) and silica gel column chromatography (silica gel column chromatography). At this time, the yield is 88-94%.

(4) 고리화 단계(D단계)(4) Cyclization step (D step)

C단계에서 제조된 1-(2-벤질싸이오)페닐-3-페닐-2-프로핀-1-온에 포름산(Formic acid)/THF (1/1, v/v)를 첨가하여, 싸이오아우론계 화합물이 제조된다. 그리고 포름산 및 벤질포메이트(benzyl formate)는 압력을 감소시켜 증발시킨다.Formic acid/THF (1/1, v/v) was added to 1-(2-benzylthio)phenyl-3-phenyl-2-propyn-1-one prepared in step C. Oauron-based compounds are prepared. And formic acid and benzyl formate are evaporated by reducing the pressure.

포름산과 다른 산들을 사용한 수득률을 비교한 결과, 포름산을 사용하여 65 oC에서 3h 반응을 진행하여 싸이오아우론은 91%로 수득되었고, 트리플루오르아세트산, 85% 인산, 아세트산은 각각 반응시간 1h, 8h, 12h 소요되어, 각각 수득률 86,85,90%이다. 반응온도는 모두 동일하다.As a result of comparing the yield using formic acid and other acids, 3h reaction was carried out at 65 o C using formic acid, yielding 91% of thioauron, trifluoroacetic acid, 85% phosphoric acid, and acetic acid, respectively, reaction time 1h, It took 8h and 12h, yielding 86,85,90%, respectively. All reaction temperatures are the same.

하기 반응식 6 및 7은 D단계에서, 페닐기(phenyl)와 다른 치환기가 있을 때의 반응을 비교한 것이다.Reaction Schemes 6 and 7 below compare the reaction when there is a phenyl group (phenyl) and other substituents in step D.

[반응식 6][Scheme 6]

Figure pat00035
Figure pat00035

[반응식 7][Scheme 7]

Figure pat00036
Figure pat00036

1-(2-벤질싸이오)페닐-3-(n-뷰틸)-2-프로핀-1-온(1-(2-benzylthio)phenyl-3-(n-butyl)-2-propyn-1-one)에 포름산/THF (1/1, v/v)를 첨가한 결과 1-(2-벤질싸이오)페닐-3-페닐-2-프로핀-1-온과는 다르게, 5각 고리가 아닌 6각고리(65%)가 주생성물이 된다. 따라서, 페닐 치환기인 경우에 위치선택성으로 싸이오아우론계 화합물을 합성이 유리한 것을 확인할 수 있다. 따라서, 분자 내 고리화 반응은 먼저 포름산과 1-(2-벤질싸이오)페닐-3-페닐-2-프로핀-1-온가 반응하여, 1-(2-메르캅토페닐)-3-페닐-2-프로핀-1-온(1-(2-mercaptophenyl)-3-phenyl-2-propyn-1-one) 형태의 중간체를 형성하고, 연속적으로 α-탄소 공격에 의해 고리화 반응이 일어나는 것을 알 수 있다. 1-(2-benzylthio)phenyl-3-(n-butyl)-2-propyn-1-one(1-(2-benzylthio)phenyl-3-(n-butyl)-2-propyn-1 As a result of adding formic acid/THF (1/1, v/v) to -one), unlike 1-(2-benzylthio)phenyl-3-phenyl-2-propyn-1-one, a pentagonal ring Hexagonal rings (65%) are the main products. Therefore, in the case of a phenyl substituent, it can be confirmed that it is advantageous to synthesize a thioauron-based compound due to regioselectivity. Therefore, in the intramolecular cyclization reaction, first, formic acid and 1-(2-benzylthio)phenyl-3-phenyl-2-propyn-1-one react, and 1-(2-mercaptophenyl)-3-phenyl -2-propyn-1-one (1-(2-mercaptophenyl)-3-phenyl-2-propyn-1-one) forms an intermediate, and a cyclization reaction occurs by successive α-carbon attack Can be seen.

또한, 본 제조방법에 의한 싸이오아우론계 화합물은 B-벤젠고리와 카보닐기(carbonyl group)의 입체적 반발(steric repulsion)때문에, 엑소싸이클릭 C=C 이중결합(exocyclic double bond)은 (Z)-구조((Z)-form)가 (E)-구조((E)-form)에 비해 더 선호되었다.In addition, because of the steric repulsion of the B-benzene ring and the carbonyl group, the thioauron-based compound according to the present preparation method is an exocyclic C=C double bond (Z) The -structure ((Z)-form) was preferred over the (E)-structure ((E)-form).

이하, 화학식 7 내지 15로 표현되는 화합물은 다음과 같이 합성된다.Hereinafter, the compounds represented by Chemical Formulas 7 to 15 are synthesized as follows.

<합성예 1><Synthesis Example 1>

(Z)-싸이오아우론((Z)-thioaurone)의 제조Preparation of (Z)-thioaurone ((Z)-thioaurone)

(1) 황 보호기 부착 단계(A단계)(1) Step of attaching sulfur protector (Step A)

싸이오살리실산과 2당량의 LDA(Lithium diisopropylamide)와 반응시켜 다이에나이온(dianion) 형태의 중간체를 형성한다. 그리고, 벤질클로라이드(benzyl chloride)를 추가하면 황(S)원자에 벤질기가 첨가된다. 반응이 모두 진행하여 평형상태 도달 후에 1N 염산(HCl)로 마무리하면 2-(벤질싸이오)벤조산을 제조된다.By reacting with thiosalicylic acid and 2 equivalents of LDA (Lithium diisopropylamide), a dianion-type intermediate is formed. And, when benzyl chloride is added, a benzyl group is added to the sulfur (S) atom. After all the reaction proceeds and equilibrium is reached, 2-(benzylthio)benzoic acid is prepared by finishing with 1N hydrochloric acid (HCl).

(2) 벤즈아마이드 생성 단계(B단계)(2) Benzamide production step (B step)

첫 번째 단계에서 제조된 2-(벤질싸이오)벤조산에 N-메톡시-N-메틸카르바모일클로라이드, 트리에틸아민(Triethylamine)을 반응시켜 N-메톡시-N-메틸-2-(벤질싸이오)벤즈아마이드를 제조한다. 이때, 4-(다이메틸아미노)피리딘(DMAP, 4-(dimethylamino)pyridine) 0.05당량 포함된 아세토나이트릴(CH3CN)을 용매로 한다.N-methoxy-N-methyl-2-(benzyl) was reacted with 2-(benzylthio)benzoic acid prepared in the first step with N-methoxy-N-methylcarbamoyl chloride and triethylamine. Thio) benzamide is prepared. In this case, acetonitrile (CH 3 CN) containing 0.05 equivalents of 4-(dimethylamino) pyridine (DMAP, 4-(dimethylamino) pyridine) is used as a solvent.

(3) 친핵성 아실 치환 단계(C단계)(3) nucleophilic acyl substitution step (step C)

THF을 용매로, 0 oC 내지 상온에서 치환기가 모두 수소(H)인 아릴에틴일리튬(arylethynyllithiums)을 첨가하여 1-(2-벤질싸이오)페닐-3-페닐-2-프로핀-1-온이 만들어진다. C단계에서의 수득률은 90%이다.1-(2-benzylthio)phenyl-3-phenyl-2-propine-1 by adding THF as a solvent, and adding arylethynyllithiums whose substituents are all hydrogen (H) at 0 o C to room temperature -On is made. The yield in step C is 90%.

(4) 고리화 단계(D단계)(4) Cyclization step (D step)

THF 용매(5 mL)에 1-(2-벤질싸이오)페닐-3-페닐-2-프로핀-1-온(657mg, 2.0 mmol)에 포름산(5 mL)을 첨가하고, 65 oC로 3 시간 동안 가열한다. 진공펌프를 이용하여 압력을 감소시켜, 용액 및 벤질폼에이트(benzyl formate)(bp 203oC)를 증발시킨다. 결과 잔여물은 25% EtOAc/n-hexane을 용출용매로 사용한 실리카 겔 칼럼 크로마토그래피(silica gel column chromatography)로 재결정되어 황색 고체상의 하기 화학식 7으로 표현되는 싸이오아우론 화합물이 합성되었다. D단계에서의 수득률은 91%이고, 전체 반응에 의한 총 수득률은 59%이다. 화합물에 대한 측정 결과는 다음과 같다. mp 129-130 oC; 1H NMR (300 MHz, CDCl3) δ 7.96(s, 1H), 7.94 (d, J = 7.9 Hz, 1H), 7.71 (d, J = 7.5 Hz, 2H), 7.54-7.60 (m, 1H), 7.40-7.51 (m, 4H), 7.24-7.32 (m, 1H); 13C NMR (75 MHz, CDCl3) δ 188.6, 146.2, 135.3, 134.4, 133.5, 131.0, 130.5, 130.3, 130.1, 129.0, 127.1, 125.6, 123.9; FT-IR (KBr) 1675 (C=O) cm-1; MS m/z (%) 238 (M+, 59), 237 (100).Formic acid (5 mL) was added to 1-(2-benzylthio)phenyl-3-phenyl-2-propyn-1-one (657mg, 2.0 mmol) in THF solvent (5 mL), and then to 65 o C. Heat for 3 hours. By reducing the pressure using a vacuum pump, the solution and benzyl formate (bp 203 o C) are evaporated. The resulting residue was recrystallized by silica gel column chromatography using 25% EtOAc/n-hexane as an elution solvent to synthesize a thioauron compound represented by the following formula (7) as a yellow solid. The yield in step D is 91%, and the total yield by the total reaction is 59%. The measurement results for the compound are as follows. mp 129-130 o C; 1 H NMR (300 MHz, CDCl 3 ) δ 7.96 (s, 1H), 7.94 (d, J = 7.9 Hz, 1H), 7.71 (d, J = 7.5 Hz, 2H), 7.54-7.60 (m, 1H) , 7.40-7.51 (m, 4H), 7.24-7.32 (m, 1H); 13 C NMR (75 MHz, CDCl 3 ) δ 188.6, 146.2, 135.3, 134.4, 133.5, 131.0, 130.5, 130.3, 130.1, 129.0, 127.1, 125.6, 123.9; FT-IR (KBr) 1675 (C=O) cm -1 ; MS m/z (%) 238 (M + , 59), 237 (100).

[화학식 7][Formula 7]

Figure pat00037
Figure pat00037

<합성예 2 내지 9><Synthesis Examples 2 to 9>

C단계에서 사용되는 아릴에틴일리튬의 치화기만 다르게 하여, 합성예 1과 동일한 방법으로 합성예 2 내지 9의 싸이오아우론계 화합물을 제조하였다.Thioauron-based compounds of Synthesis Examples 2 to 9 were prepared in the same manner as in Synthesis Example 1 by differently only the valuation group of the arylethynyllithium used in step C.

<합성예 2><Synthesis Example 2>

(Z)-2'-메틸싸이오아우론((Z)-2'-Methylthioaurone)의 제조Preparation of (Z)-2'-methylthioaurone ((Z)-2'-Methylthioaurone)

(Z)-2'-메틸싸이오아우론은 C단계에 있어서, (2-메틸아릴)에틴일리튬을 첨가한 것으로, 벤젠고리 2번 자리(화학식 2의 치환기 R1)에 메틸기(Me-)가 있다. C단계에서의 수득률은 92%이고, D단계에서의 수득률은 88%으로, 전체 반응에 의한 총 수득률은 58%이다. (Z)-2'-메틸싸이오아우론의 구조식은 하기 화학식 8로 표시된다.(Z)-2'-methylthioauron is (2-methylaryl)ethynyllithium added in step C, and a methyl group (Me-) is added to the second benzene ring (substituent R1 of Formula 2). have. The yield in step C is 92%, the yield in step D is 88%, and the total yield by the whole reaction is 58%. The structural formula of (Z)-2'-methylthioauron is represented by the following formula (8).

[화학식 8][Formula 8]

Figure pat00038
Figure pat00038

<합성예 3><Synthesis Example 3>

(Z)-2'-메톡시싸이오아우론((Z)-2'-Methoxythioaurone)의 제조Preparation of (Z)-2'-Methoxythioaurone ((Z)-2'-Methoxythioaurone)

(Z)-2'-메톡시싸이오아우론은 C단계에 있어서, (2-메톡시아릴)에틴일리튬을 첨가한 것으로, 벤젠고리 2번 자리(화학식 2의 치환기 R1)에 메톡시기(MeO-)가 있다. C단계에서의 수득률은 94%이고, D단계에서의 수득률은 86%으로, 전체 반응에 의한 총 수득률은 58%이다. (Z)-2'-메톡시싸이오아우론의 구조식은 하기 화학식 9로 표시되고, 화합물에 대한 측정 결과는 다음과 같다. mp 152-153 oC; 1H NMR (300 MHz, CDCl3) δ 8.43 (s, 1H), 7.94 (d, J = 7.6 Hz, 1H), 7.77 (d, J = 7.6 Hz, 1H), 7.46-7.58 (m, 2H), 7.35-7.42 (m, 1H), 7.24-7.31 (m, 1H), 7.06 (t, J = 7.5 Hz, 1H), 6.94 (d, J = 8.3 Hz, 1H), 3.91 (s, 3H); 13C NMR (75 MHz, CDCl3) δ 188.6, 159.2, 146.2, 135.1, 131.9, 130.8, 130.2, 129.9, 128.6, 127.0, 125.4, 123.9, 123.5, 120.7, 111.0, 55.6; FT-IR (KBr) 1677 (C=O) cm-1; MS m/z (%) 268 (M+, 25), 237 (100).(Z)-2'-methoxythioauron is obtained by adding (2-methoxyaryl)ethynyllithium in step C, and a methoxy group (MeO) at the second site of the benzene ring (substituent R1 of Formula 2) -). The yield in step C is 94%, the yield in step D is 86%, and the total yield by the whole reaction is 58%. The structural formula of (Z)-2'-methoxythioauron is represented by the following formula (9), and the measurement results for the compound are as follows. mp 152-153 o C; 1 H NMR (300 MHz, CDCl 3 ) δ 8.43 (s, 1H), 7.94 (d, J = 7.6 Hz, 1H), 7.77 (d, J = 7.6 Hz, 1H), 7.46-7.58 (m, 2H) , 7.35-7.42 (m, 1H), 7.24-7.31 (m, 1H), 7.06 (t, J = 7.5 Hz, 1H), 6.94 (d, J = 8.3 Hz, 1H), 3.91 (s, 3H); 13 C NMR (75 MHz, CDCl 3 ) δ 188.6, 159.2, 146.2, 135.1, 131.9, 130.8, 130.2, 129.9, 128.6, 127.0, 125.4, 123.9, 123.5, 120.7, 111.0, 55.6; FT-IR (KBr) 1677 (C=O) cm -1 ; MS m/z (%) 268 (M + , 25), 237 (100).

[화학식 9][Formula 9]

Figure pat00039
Figure pat00039

<합성예 4><Synthesis Example 4>

(Z)-3'-클로로싸이오아우론((Z)-3'-Chlorothioaurone)의 제조Preparation of (Z)-3'-chlorothioaurone ((Z)-3'-Chlorothioaurone)

(Z)-3'-클로로싸이오아우론은 C단계에 있어서, (3-클로로아릴)에틴일리튬을 첨가한 것으로, 벤젠고리 3번 자리(화학식 2의 치환기 R2)에 염소(Cl)가 있다. C단계에서의 수득률은 93%이고, D단계에서의 수득률은 90%으로, 전체 반응에 의한 총 수득률은 60%이다. (Z)-3'-클로로싸이오아우론의 구조식은 하기 화학식 10으로 표시되고, 화합물에 대한 측정 결과는 다음과 같다. mp 161-162 oC; 1H NMR (300 MHz, CDCl3) δ 7.93 (d, J = 7.6 Hz, 1H), 7.85 (s, 1H), 7.67 (s, 1H), 7.54-7.62 (m, 2H), 7.50 (d, J = 7.8 Hz, 1H), 7.34-7.44 (m, 2H), 7.25-7.34 (m, 1H); 13C NMR (75 MHz, CDCl3) δ 188.5, 145.8, 136.1, 135.6, 135.1, 131.6, 130.5, 130.2 (overlapped), 130.0, 129.0, 127.2, 125.9, 124.0; FT-IR (KBr) 1684 (C=O) cm-1; MS m/z (%) 274 (M++2, 27), 273 (46), 272 (M+, 74), 271 (100).(Z)-3'-chlorothioauron is (3-chloroaryl) ethynyllithium added in step C, and there is chlorine (Cl) at the 3rd position of the benzene ring (substituent R2 in Formula 2) . The yield in step C is 93%, the yield in step D is 90%, and the total yield by the whole reaction is 60%. The structural formula of (Z)-3'-chlorothioauron is represented by the following formula (10), and the measurement results for the compound are as follows. mp 161-162 o C; 1H NMR (300 MHz, CDCl 3 ) δ 7.93 (d, J = 7.6 Hz, 1H), 7.85 (s, 1H), 7.67 (s, 1H), 7.54-7.62 (m, 2H), 7.50 (d, J = 7.8 Hz, 1H), 7.34-7.44 (m, 2H), 7.25-7.34 (m, 1H); 13 C NMR (75 MHz, CDCl 3 ) δ 188.5, 145.8, 136.1, 135.6, 135.1, 131.6, 130.5, 130.2 (overlapped), 130.0, 129.0, 127.2, 125.9, 124.0; FT-IR (KBr) 1684 (C=O) cm -1 ; MS m/z (%) 274 (M + +2, 27), 273 (46), 272 (M + , 74), 271 (100).

[화학식 10][Formula 10]

Figure pat00040
Figure pat00040

<합성예 5> <Synthesis Example 5>

(Z)-4'-브로모싸이오아우론((Z)-4'-Bromothioaurone)의 제조Preparation of (Z)-4'-Bromothioaurone ((Z)-4'-Bromothioaurone)

(Z)-4'-브로모싸이오아우론은 C단계에 있어서, (4-브로모아릴)에틴일리튬을 첨가한 것으로, 벤젠고리 4번 자리(화학식 2의 치환기 R3)에 브롬(Br)이 있다. C단계에서의 수득률은 92%이고, D단계에서의 수득률은 92%으로, 전체 반응에 의한 총 수득률은 61%이다. (Z)-4'-브로모싸이오아우론의 구조식은 하기 화학식 11으로 표시되고, 화합물에 대한 측정 결과는 다음과 같다. mp 168-169 oC; 1H NMR (300 MHz, CDCl3) δ 7.93 (d, J = 7.7 Hz, 1H), 7.85 (s, 1H), 7.54-7.62 (m, 5H), 7.47-7.54 (m, 1H), 7.26-7.33 (m, 1H); 13C NMR (75 MHz, CDCl3) δ 188.6, 145.8, 135.5, 133.2, 132.3, 132.2, 132.0, 130.9, 130.3, 127.2, 125.8, 124.6, 124.0; FT-IR (KBr) 1685 (C=O) cm-1; MS m/z (%) 318 (M++2, 62), 316 (M+, 62), 237 (100).(Z)-4'-bromothioauron is obtained by adding (4-bromoaryl)ethynyllithium in step C, and bromine (Br) at position 4 of the benzene ring (substituent R3 in Formula 2) There is this. The yield in step C is 92%, the yield in step D is 92%, and the total yield by the whole reaction is 61%. The structural formula of (Z)-4'-bromothioauron is represented by the following formula (11), and the measurement results for the compound are as follows. mp 168-169 o C; 1 H NMR (300 MHz, CDCl 3 ) δ 7.93 (d, J = 7.7 Hz, 1H), 7.85 (s, 1H), 7.54-7.62 (m, 5H), 7.47-7.54 (m, 1H), 7.26- 7.33 (m, 1H); 13 C NMR (75 MHz, CDCl 3 ) δ 188.6, 145.8, 135.5, 133.2, 132.3, 132.2, 132.0, 130.9, 130.3, 127.2, 125.8, 124.6, 124.0; FT-IR (KBr) 1685 (C=O) cm -1 ; MS m/z (%) 318 (M + +2, 62), 316 (M + , 62), 237 (100).

[화학식 11][Formula 11]

Figure pat00041
Figure pat00041

<합성예 6><Synthesis Example 6>

(Z)-4'-메틸싸이오아우론((Z)-4'-Methylthioaurone)의 제조Preparation of (Z)-4'-methylthioaurone ((Z)-4'-Methylthioaurone)

(Z)-4'-메틸싸이오아우론은 C단계에 있어서, (4-메틸아릴)에틴일리튬을 첨가한 것으로, 벤젠고리 4번 자리(화학식 2의 치환기 R3)에 메틸기(Me-)가 있다. C단계에서의 수득률은 93%이고, D단계에서의 수득률은 83%으로, 전체 반응에 의한 총 수득률은 56%이다. (Z)-4'-메틸싸이오아우론의 구조식은 하기 화학식 12로 표시되고, 화합물에 대한 측정 결과는 다음과 같다. mp 136-137 oC; 1H NMR (300 MHz, CDCl3) δ 7.94 (s, 1H), 7.93 (d, J = 7.4 Hz, 1H), 7.60 (d, J = 8.0 Hz, 2H), 7.46-7.57 (m, 2H), 7.28 (d, J = 7.9 Hz, 2H), 7.27-7.31 (m, 1H), 2.40 (s, 3H); 13C NMR (75 MHz, CDCl3) δ 188.7, 146.1, 140.9, 135.2, 133.8, 131.5, 131.1, 130.6, 129.9, 129.2, 127.0, 125.5, 123.9, 21.6; FT-IR (KBr) 1670 (C=O) cm-1; MS m/z (%) 252 (M+, 60), 237 (100).(Z)-4'-methylthioauron is (4-methylaryl)ethynyllithium added in step C, and a methyl group (Me-) is added to the benzene ring 4 position (substituent R3 in Formula 2). have. The yield in step C is 93%, the yield in step D is 83%, and the total yield by the whole reaction is 56%. The structural formula of (Z)-4'-methylthioauron is represented by the following formula (12), and the measurement results for the compound are as follows. mp 136-137 o C; 1 H NMR (300 MHz, CDCl 3 ) δ 7.94 (s, 1H), 7.93 (d, J = 7.4 Hz, 1H), 7.60 (d, J = 8.0 Hz, 2H), 7.46-7.57 (m, 2H) , 7.28 (d, J = 7.9 Hz, 2H), 7.27-7.31 (m, 1H), 2.40 (s, 3H); 13 C NMR (75 MHz, CDCl 3 ) δ 188.7, 146.1, 140.9, 135.2, 133.8, 131.5, 131.1, 130.6, 129.9, 129.2, 127.0, 125.5, 123.9, 21.6; FT-IR (KBr) 1670 (C=O) cm -1 ; MS m/z (%) 252 (M + , 60), 237 (100).

[화학식 12][Formula 12]

Figure pat00042
Figure pat00042

<합성예 7><Synthesis Example 7>

(Z)-4'-메톡시싸이오아우론((Z)-4'-Methoxythioaurone)의 제조Preparation of (Z)-4'-Methoxythioaurone ((Z)-4'-Methoxythioaurone)

(Z)-4'-메톡시싸이오아우론은 C단계에 있어서, (4-메톡시아릴)에틴일리튬을 첨가한 것으로, 벤젠고리 4번 자리(화학식 2의 치환기 R3)에 메톡시기(MeO-)가 있다. C단계에서의 수득률은 91%이고, D단계에서의 수득률은 85%으로, 전체 반응에 의한 총 수득률은 56%이다. (Z)-3'-클로로싸이오아우론의 구조식은 하기 화학식 13으로 표시된다.(Z)-4'-methoxythioauron is obtained by adding (4-methoxyaryl)ethynyllithium in step C, and the methoxy group (MeO) at the fourth position of the benzene ring (substituent R3 in the formula 2) -). The yield in step C is 91%, the yield in step D is 85%, and the total yield by the entire reaction is 56%. The structural formula of (Z)-3'-chlorothioauron is represented by the following formula (13).

[화학식 13][Formula 13]

Figure pat00043
Figure pat00043

<합성예 8><Synthesis Example 8>

(Z)-4'-메톡시-2'-메틸싸이오아우론((Z)-4'-Methoxy-2'-methylthioaurone)의 제조Preparation of (Z)-4'-methoxy-2'-methylthioaurone ((Z)-4'-Methoxy-2'-methylthioaurone)

(Z)-4'-메톡시-2'-메틸싸이오아우론은 C단계에 있어서, (4-메톡시-2-메틸아릴)에틴일리튬을 첨가한 것으로, 벤젠고리 4번 자리(화학식 2의 치환기 R3)에 메톡시기(MeO-)가 있고, 2번 자리(화학식 2의 치환기 R1)에 메틸기(Me-)가 있다. C단계에서의 수득률은 94%이고, D단계에서의 수득률은 72%으로, 전체 반응에 의한 총 수득률은 49%이다. (Z)-4'-메톡시-2'-메틸싸이오아우론의 구조식은 하기 화학식 14로 표시되고, 화합물에 대한 측정 결과는 다음과 같다. mp 137-138 oC; 1H NMR (300 MHz, CDCl3) δ 8.18 (s, 1H), 7.94 (d, J = 7.6 Hz, 1H), 7.75 (d, J = 8.6 Hz, 1H), 7.46-7.59 (m, 2H), 7.24-7.31 (m, 1H), 6.87 (dd, J = 8.6, 2.6 Hz, 1H), 6.81 (d, J = 2.2 Hz, 1H), 3.85 (s, 3H), 2.50 (s, 3H); 13C NMR (75 MHz, CDCl3) δ 188.5, 161.0, 146.3, 142.3, 134.9, 131.1, 131.0, 130.8, 128.9, 127.0, 125.9, 125.4, 123.9, 116.6, 111.8, 55.4, 20.5; FT-IR (KBr) 1671 (C=O) cm-1; MS m/z (%) 282 (M+, 75), 267 (100).(Z)-4'-methoxy-2'-methylthioauron is obtained by adding (4-methoxy-2-methylaryl)ethynyllithium in step C, and the benzene ring site 4 (Chemical Formula 2) There is a methoxy group (MeO-) in the substituent R3), and a methyl group (Me-) in the 2nd position (substituent R1 in the formula 2). The yield in step C is 94%, the yield in step D is 72%, and the total yield by the whole reaction is 49%. The structural formula of (Z)-4'-methoxy-2'-methylthioauron is represented by the following formula (14), and the measurement results for the compound are as follows. mp 137-138 o C; 1 H NMR (300 MHz, CDCl 3 ) δ 8.18 (s, 1H), 7.94 (d, J = 7.6 Hz, 1H), 7.75 (d, J = 8.6 Hz, 1H), 7.46-7.59 (m, 2H) , 7.24-7.31 (m, 1H), 6.87 (dd, J = 8.6, 2.6 Hz, 1H), 6.81 (d, J = 2.2 Hz, 1H), 3.85 (s, 3H), 2.50 (s, 3H); 13 C NMR (75 MHz, CDCl 3 ) δ 188.5, 161.0, 146.3, 142.3, 134.9, 131.1, 131.0, 130.8, 128.9, 127.0, 125.9, 125.4, 123.9, 116.6, 111.8, 55.4, 20.5; FT-IR (KBr) 1671 (C=O) cm -1 ; MS m/z (%) 282 (M + , 75), 267 (100).

[화학식 14][Formula 14]

Figure pat00044
Figure pat00044

<합성예 9><Synthesis Example 9>

(Z)-3', 5'-다이메톡시싸이오아우론((Z)-3', 5'-Dimethoxymethylthioaurone)의 제조Preparation of (Z)-3', 5'-dimethoxymethylthioaurone ((Z)-3', 5'-Dimethoxymethylthioaurone)

(Z)-3', 5'-다이메톡시싸이오아우론은 C단계에 있어서, (3, 5-다이메톡시아릴)에틴일리튬을 첨가한 것으로, 벤젠고리 3번 및 5번 자리(화학식 2의 치환기 R2 및 R4)에 메톡시기(MeO-)가 있다. C단계에서의 수득률은 88%이고, D단계에서의 수득률은 81%으로, 전체 반응에 의한 총 수득률은 51%이다. (Z)-3', 5'-다이메톡시싸이오아우론의 구조식은 하기 화학식 15로 표시되고, 화합물에 대한 측정 결과는 다음과 같다. mp 167-168 oC; 1H NMR (300 MHz, CDCl3) δ 7.93 (d, J = 7.7 Hz, 1H), 7.87 (s, 1H), 7.55-7.60 (m, 1H), 7.48 (d, J = 7.8 Hz, 1H), 7.25-7.32 (m, 1H), 6.85 (d, J = 2.1 Hz, 2H), 6.53 (t, J = 2.2 Hz, 1H), 3.85 (s, 6H); 13C NMR (75 MHz, CDCl3) δ 188.6, 161.0, 146.1, 136.0, 135.4, 133.7, 130.8, 130.4, 127.1, 125.7, 123.9, 108.7, 102.8, 55.5; FT-IR (KBr) 1675 (C=O) cm-1; MS m/z (%) 298 (M+, 57), 267 (100).(Z)-3', 5'-dimethoxythioauron is (3, 5-dimethoxyaryl) ethynyllithium added in step C, and the benzene ring positions 3 and 5 (chemical formula 2 has a methoxy group (MeO-) in the substituents R2 and R4). The yield in step C is 88%, the yield in step D is 81%, and the total yield by the entire reaction is 51%. The structural formula of (Z)-3', 5'-dimethoxythioauron is represented by the following formula (15), and the measurement results for the compound are as follows. mp 167-168 o C; 1 H NMR (300 MHz, CDCl 3 ) δ 7.93 (d, J = 7.7 Hz, 1H), 7.87 (s, 1H), 7.55-7.60 (m, 1H), 7.48 (d, J = 7.8 Hz, 1H) , 7.25-7.32 (m, 1H), 6.85 (d, J = 2.1 Hz, 2H), 6.53 (t, J = 2.2 Hz, 1H), 3.85 (s, 6H); 13 C NMR (75 MHz, CDCl 3 ) δ 188.6, 161.0, 146.1, 136.0, 135.4, 133.7, 130.8, 130.4, 127.1, 125.7, 123.9, 108.7, 102.8, 55.5; FT-IR (KBr) 1675 (C=O) cm -1 ; MS m/z (%) 298 (M + , 57), 267 (100).

[화학식 15][Formula 15]

Figure pat00045
Figure pat00045

합성예 1 내지 9에 있어서, 사용되는 아릴에틴일리튬, 최종 생성된 싸이오아우론계 화합물, 각 단계 및 총 수득률은 하기 표 2와 같다.In Synthesis Examples 1 to 9, the arylethynyllithium used, the finally produced thioauron-based compound, each step and the total yield are shown in Table 2 below.

구분division 시약reagent 생성물
(Thioaurones)
product
(Thioaurones)
수득률(%)Yield (%)
화학식 6Formula 6 화학식 1Formula 1 합성예 1Synthesis Example 1 아릴에틴일리튬Arylethynyllithium (Z)-싸이오아우론
((Z)-thioaurone)
(Z)-Thioauron
((Z)-thioaurone)
9090 91(59)91(59)
합성예 2Synthesis Example 2 (2-메틸아릴)에틴일리튬Lithium (2-methylaryl)ethynyl (Z)-2'-메틸싸이오아우론
((Z)-2'-Methylthioaurone)
(Z)-2'-methylthioauron
((Z)-2'-Methylthioaurone)
9292 88(58)88(58)
합성예 3Synthesis Example 3 (2-메톡시아릴)에틴일리튬Lithium (2-methoxyaryl)ethynyl (Z)-2'-메톡시싸이오아우론
((Z)-2'-Methoxythioaurone)
(Z)-2'-methoxythioauron
((Z)-2'-Methoxythioaurone)
9494 86(58)86(58)
합성예 4Synthesis Example 4 (3-클로로아릴)에틴일리튬Lithium (3-chloroaryl)ethynyl (Z)-3'-클로로싸이오아우론
((Z)-3'-Chlorothioaurone)
(Z)-3'-chlorothioauron
((Z)-3'-Chlorothioaurone)
9393 90(60)90(60)
합성예 5Synthesis Example 5 (4-브로모아릴)에틴일리튬Lithium (4-bromoaryl)ethynyl (Z)-4'-브로모싸이오아우론
((Z)-4'-Bromothioaurone)
(Z)-4'-bromothioauron
((Z)-4'-Bromothioaurone)
9292 92(61)92(61)
합성예 6Synthesis Example 6 (4-메틸아릴)에틴일리튬Lithium (4-methylaryl)ethynyl (Z)-4'-메틸싸이오아우론
((Z)-4'-Methylthioaurone)
(Z)-4'-methylthioauron
((Z)-4'-Methylthioaurone)
9393 83(56)83(56)
합성예 7Synthesis Example 7 (4-메톡시아릴)에틴일리튬Lithium (4-methoxyaryl)ethynyl (Z)-4'-메톡시싸이오아우론
((Z)-4'-Methoxythioaurone)
(Z)-4'-methoxythioauron
((Z)-4'-Methoxythioaurone)
9191 85(56)85(56)
합성예 8Synthesis Example 8 (4-메톡시-2-메틸아릴)에틴일리튬Lithium (4-methoxy-2-methylaryl)ethynyl (Z)-4'-메톡시-2'-메틸싸이오아우론
((Z)-4'-Methoxy-2'-methylthioaurone)
(Z)-4'-methoxy-2'-methylthioauron
((Z)-4'-Methoxy-2'-methylthioaurone)
9494 72(49)72(49)
합성예 9Synthesis Example 9 (3,5-다이메톡시아릴)에틴일리튬Lithium (3,5-dimethoxyaryl)ethynyl (Z)-3', 5'-다이메톡시싸이오아우론
((Z)-3', 5'-Dimethoxymethylthioaurone)
(Z)-3', 5'-dimethoxythioauron
((Z)-3', 5'-Dimethoxymethylthioaurone)
8888 81(51)81(51)

표 2에서 "아릴에틴일리튬"은 C단계에서 첨가되는 아릴에틴일리튬의 종류를 표시한 것이다. "생성물(Thioaurones)"은 첨가되는 아릴에틴일리튬에 따른 최종 생성물을 표시한 것이다. "수득률"의 화학식 6 및 화학식 1은 C단계 및 D단계에서의 수득률을 뜻하고, 괄호 안의 숫자는 총 수득률을 나타낸다.In Table 2, "arylethynyllithium" indicates the type of arylethynyllithium added in step C. "Thioaurones" refers to the final product depending on the arylethynyllithium added. Formula 6 and Formula 1 of "yield" refer to the yields in steps C and D, and the numbers in parentheses represent the total yield.

표 2에 개시된 바와 같이, B-벤젠고리의 치환기에 따른 세 번째 및 네 번째 단계에서의 수득률의 차이는 치환기의 개수, 종류 및 위치에 큰 영향을 받지 않는다. 특히, 화합물 e((Z)-4'-브로모싸이오아우론)의 경우, 총 수득률 61%로 가장 높은 수치를 보이며, 다른 화합물 역시 평균 56%의 수득률을 보이고, 전체 반응이 상온에서 무리 없이 진행된다.As disclosed in Table 2, the difference in yield in the third and fourth steps according to the substituents of the B-benzene ring is not significantly affected by the number, type and position of the substituents. In particular, in the case of compound e ((Z)-4'-bromothioauron), the highest value was shown with a total yield of 61%, and other compounds also showed an average yield of 56%, and the entire reaction was carried out without difficulty at room temperature. It goes on.

Claims (14)

싸이오살리실산을 강염기성 물질 및 벤질할라이드와 반응시켜 2-(벤질싸이오)벤조산 화합물을 제조하는 황(S) 보호기 부착 단계;
상기 2-(벤질싸이오)벤조산 화합물을 N-메톡시-N-메틸카르바모일클로라이드와 반응시켜 N-메톡시-N-메틸-2-(벤질싸이오)벤즈아마이드를 제조하는 벤즈아마이드 생성 단계;
상기 N-메톡시-N-메틸-2-(벤질싸이오)벤즈아마이드를 아릴에틴일염으로 처리하여 1-(2-벤질싸이오)페닐-3-페닐-2-프로핀-1-온을 제조하는 친핵성 아실 치환 단계;
상기 1-(2-벤질싸이오)페닐-3-페닐-2-프로핀-1-온을 산 물질로 처리하는 고리화 단계;를 포함하는 싸이오아우론계 화합물의 제조방법.
Attaching a sulfur (S) protecting group to prepare a 2-(benzylthio)benzoic acid compound by reacting thiosalicylic acid with a strong basic substance and benzyl halide;
The 2-(benzylthio)benzoic acid compound is reacted with N-methoxy-N-methylcarbamoyl chloride to produce benzamide to produce N-methoxy-N-methyl-2-(benzylthio)benzamide step;
Treating the N-methoxy-N-methyl-2-(benzylthio)benzamide with an arylethynyl salt to give 1-(2-benzylthio)phenyl-3-phenyl-2-propyn-1-one Nucleophilic acyl substitution step to prepare;
A method for producing a thioauron-based compound comprising a cyclization step of treating the 1-(2-benzylthio)phenyl-3-phenyl-2-propyn-1-one with an acid material.
제1항에 있어서,
상기 싸이오아우론계 화합물은 하기 화학식 1로 표현되고,
[화학식 1]
Figure pat00046

여기서, R1 내지 R5은 각각 독립적으로 수소, 알킬기, 알콕시기, 및 할라이드로 이루어진 군 중에서 어느 하나인 싸이오아우론계 화합물의 제조방법.
The method of claim 1,
The thioauron-based compound is represented by the following formula (1),
[Formula 1]
Figure pat00046

Here, R1 to R5 are each independently hydrogen, an alkyl group, an alkoxy group, and any one of the group consisting of a halide.
제1항에 있어서,
상기 아릴에틴일염은 하기 화학식 2로 표현되고,
[화학식 2]
Figure pat00047

여기서, R1 내지 R5은 각각 독립적으로 수소, 알킬기, 알콕시기, 및 할라이드로 이루어진 군 중에서 어느 하나인 싸이오아우론계 화합물의 제조방법.
The method of claim 1,
The arylethynyl salt is represented by the following formula (2),
[Formula 2]
Figure pat00047

Here, R1 to R5 are each independently hydrogen, an alkyl group, an alkoxy group, and any one of the group consisting of a halide.
제1항에 있어서,
하기 반응식 1로 표현되는 싸이오아우론계 화합물의 제조방법.
[반응식 1]
Figure pat00048
The method of claim 1,
A method for preparing a thioauron-based compound represented by the following reaction formula 1.
[Scheme 1]
Figure pat00048
제1항에 있어서,
상기 황(S)원자 보호기 부착 단계는 하기 반응식 2로 표현되는 싸이오아우론계 화합물의 제조방법.
[반응식 2]
Figure pat00049
The method of claim 1,
The step of attaching the sulfur (S) atom protecting group is a method of preparing a thioauron-based compound represented by the following reaction formula 2.
[Scheme 2]
Figure pat00049
제1항에 있어서,
상기 벤즈아마이드 생성 단계는 하기 반응식 3으로 표현되는 싸이오아우론계 화합물의 제조방법.
[반응식 3]
Figure pat00050
The method of claim 1,
The step of producing benzamide is a method of producing a thioauron-based compound represented by the following scheme 3.
[Scheme 3]
Figure pat00050
제1항에 있어서,
상기 친핵성 아실 치환 단계는 하기 반응식 4로 표현되는 싸이오아우론계 화합물의 제조방법.
[반응식 4]
Figure pat00051
The method of claim 1,
The nucleophilic acyl substitution step is a method for producing a thioauron-based compound represented by the following Scheme 4.
[Scheme 4]
Figure pat00051
제1항에 있어서,
상기 고리화 단계는 하기 반응식 5로 표현되는 싸이오아우론계 화합물의 제조방법.
[반응식 5]
Figure pat00052
The method of claim 1,
The cyclization step is a method for producing a thio-auron-based compound represented by Reaction Scheme 5.
[Scheme 5]
Figure pat00052
제1항에 있어서,
상기 강염기성 물질은 pKa가 16 이상인 물질을 포함하는 싸이오아우론계 화합물의 제조방법.
The method of claim 1,
The method for producing a thioauron-based compound, wherein the strongly basic substance includes a substance having a pKa of 16 or more.
제1항에 있어서,
상기 강염기성 물질은 리튬다이아이소프로필아마이드, 나트륨아마이드, 유기계 염기 중 어느 하나인 것을 특징으로 하는 싸이오아우론계 화합물의 제조방법.
The method of claim 1,
The method for producing a thioauron-based compound, wherein the strongly basic material is any one of lithium diisopropylamide, sodium amide, and an organic base.
제1항에 있어서,
상기 강염기성 물질은 2당량 이상을 포함하는 싸이오아우론계 화합물의 제조방법.
The method of claim 1,
The method for producing a thio-auron-based compound containing 2 equivalents or more of the strongly basic substance.
제1항에 있어서,
상기 산 물질은 pKa 4이하인 것으로 하는 싸이오아우론계 화합물의 제조방법.
The method of claim 1,
The method for producing a thio-auron-based compound, wherein the acid material is pKa 4 or less.
제1항에 있어서,
상기 산 물질은 포름산, 아세트산, 인산 및 트리플루오르아세트산 중 어느 하나인 것을 특징으로 하는 싸이오아우론계 화합물의 제조방법.
The method of claim 1,
The acid material is any one of formic acid, acetic acid, phosphoric acid, and trifluoroacetic acid.
제1항에 있어서,
상기 싸이오아우론계 화합물은 하기 화학식 7 내지 15 중 어느 하나로 표현되는 싸이오아우론계 화합물의 제조방법.
[화학식 7]
Figure pat00053

[화학식 8]
Figure pat00054

[화학식 9]
Figure pat00055

[화학식 10]
Figure pat00056

[화학식 11]
Figure pat00057

[화학식 12]
Figure pat00058

[화학식 13]
Figure pat00059

[화학식 14]
Figure pat00060

[화학식 15]
Figure pat00061
The method of claim 1,
The thio-auron-based compound is a method for producing a thio-auron-based compound represented by any one of the following Chemical Formulas 7 to 15.
[Formula 7]
Figure pat00053

[Formula 8]
Figure pat00054

[Formula 9]
Figure pat00055

[Formula 10]
Figure pat00056

[Formula 11]
Figure pat00057

[Formula 12]
Figure pat00058

[Formula 13]
Figure pat00059

[Formula 14]
Figure pat00060

[Formula 15]
Figure pat00061
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002060872A1 (en) * 2001-02-01 2002-08-08 The Australian National University Synthesis for the preparation of compounds for screening as potential tubulin binding agents
KR20060107374A (en) * 2005-04-06 2006-10-13 엥겔하드 리옹 에스.에이. A cosmetic or pharmaceutical depigmentation care composition comprising at least one aurone

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002060872A1 (en) * 2001-02-01 2002-08-08 The Australian National University Synthesis for the preparation of compounds for screening as potential tubulin binding agents
KR20060107374A (en) * 2005-04-06 2006-10-13 엥겔하드 리옹 에스.에이. A cosmetic or pharmaceutical depigmentation care composition comprising at least one aurone

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
비특허1: Synthesis (2002) *

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