KR20200135188A - Structure for quantum dot barrier ribs and preparation method thereof - Google Patents

Abstract

The present invention relates to a structure for a quantum dot barrier rib and a preparation method thereof, and the structure for the quantum dot barrier rib according to the present invention includes a cured film having a uniform film thickness within an appropriate range, in which a reflectance R_SCI measured by a specular component-included (SCI) scheme and a reflectance R_SCE measured by a specular component-excluded (SCE) scheme are reduced, and a ratio between the reflectances (R_SCE/R_SCI) is appropriately controlled, so that physical properties such as a low reflectance and a high light-shielding property are satisfied while maintaining excellent resolution and excellent pattern characteristics. In addition, when the structure for the quantum dot barrier rib is prepared, a multilayer pattern having a uniform film thickness suitable for the quantum dot barrier rib is able to be formed in a single development process, so that the structure for the quantum dot barrier rib is advantageously applied to a quantum dot display. The structure for the quantum dot barrier rib includes a cured film formed of a photosensitive resin composition including: (A) a copolymer; (B) a photopolymerizable compound; (C) a photopolymerization initiator; and (D) a colorant including a black colorant.

Description

Structure for quantum dot bulkhead and its manufacturing method {STRUCTURE FOR QUANTUM DOT BARRIER RIBS AND PREPARATION METHOD THEREOF}

The present invention relates to a structure for a quantum dot partition that satisfies the characteristics of high light-shielding property and low reflectance and a method of manufacturing the same.

Recently, interest in various electronic devices using quantum dots (QD) is increasing.

Quantum dots are nanocrystals of semiconductor materials with a diameter of about 10 nm or less, and are materials that exhibit a quantum confinement effect, and are composed of hundreds of thousands of electrons, but most of the electrons are tightly bound to the atomic nucleus and are not bound. The number of free electrons is limited to about 1 to 100. In this case, the energy level of the electrons is discontinuously limited and exhibits electrical and optical characteristics different from that of a bulk semiconductor forming a continuous band. These quantum dots generate light wavelengths of different lengths for each particle size without changing the type of material, so they can produce a variety of colors, and have the advantage of having higher color purity and light safety than existing luminous bodies.Therefore, current displays, solar cells, biosensors and lighting, etc. It is used in various fields and is attracting attention as a next-generation light emitting device.

1 is a schematic diagram for explaining a general quantum dot device. Referring to FIG. 1, the substrate structure 100 of the quantum dot device includes a transparent substrate 110 and a partition wall 120 formed to partition a region on the transparent transparent substrate 110. In addition, there are different quantum dot solutions, that is, a first quantum dot solution 130, a second quantum dot solution 140, and a third quantum dot solution 150 in each partition area, and the first quantum dot solution 130 and the second quantum dot The solution 140 and the third quantum dot solution 150 are composed of quantum dots having different energy levels. That is, they are configured to have different emission wavelength bands by adjusting the size and material of the quantum dots.

Among them, the partition wall 120 not only has a light shielding function, but also a function of preventing the composition of each color discharged into the partition from being mixed, and thus may be generally formed in the form of a film using a photosensitive resin composition.

The photosensitive resin composition used at this time should be able to prevent a decrease in contrast and color purity due to light leakage between pixels. In recent years, when research on quantum dot devices has become active, there is a need for improved performance such as excellent pattern characteristics, low reflectance and high light-shielding properties. In addition, in order to apply to a quantum dot device, a uniform film and an appropriate film thickness must be implemented to maintain excellent resolution. For example, if the film is not uniform or the film thickness is too low, the quantum dot solution may overflow the partition wall because it is not suitable as a partition wall, and in this case, color mixing or resolution may be deteriorated. In order to solve this problem, when the photosensitive resin composition is thickly applied and cured to control the film thickness, it is difficult to implement uniform coating and there is a problem that stains or contamination may occur.

Japanese Patent Publication No. 6,318,699

Accordingly, the present invention is to provide a structure for a quantum dot partition wall and a method for manufacturing the same, which satisfies high light-shielding property and low reflectance while maintaining excellent resolution and pattern characteristics.

The present invention in order to achieve the above object (A) copolymer; (B) photopolymerizable compounds; (C) photoinitiator; And (D) a colorant containing a black colorant; As a structure for a quantum dot partition wall comprising a cured film formed from a photosensitive resin composition comprising,

The quantum dot barrier structure has a total thickness of 6 µm or more, has an optical density of 0.05/µm to 2.0/µm, and reflectance R _SCI and SCE (Specular Component Included) measured by SCI (Specular Component Included) method at a wavelength of 550 nm. The reflectance R _SCE measured by the Excluded) method satisfies each of the following equations, providing a structure for a quantum dot bulkhead:

(Equation 1) R _SCI ≤ 5.0%

(Equation 2) R _SCE ≤ 0.5%

(Equation 3) 2 ≤ R _SCE / R _SCI ≤ 10.

In order to achieve the above other object, the present invention includes a first cured film formed from a first photosensitive resin composition and a second cured film formed from a second photosensitive resin composition on the first cured film,

The first photosensitive resin composition, the second photosensitive resin composition, or both of them (A) a copolymer; (B) photopolymerizable compounds; (C) photoinitiator; And (D) a colorant including a black colorant, and having a total thickness of 6 μm or more, providing a structure for a quantum dot partition wall.

In addition, in order to achieve the above other object, the present invention comprises the steps of forming a first cured film by coating and curing a first photosensitive resin composition on a substrate; Applying and curing a second photosensitive resin composition on the first cured film to form a second cured film; And exposing and developing a multilayer cured film including the first cured film and the second cured film to form a pattern, and then curing, wherein the first photosensitive resin composition, the second photosensitive resin composition, or both (A) copolymer; (B) photopolymerizable compounds; (C) photoinitiator; And (D) a colorant comprising a black colorant; containing, it provides a method for producing a structure for a quantum dot partition wall.

The structure for quantum dot barrier ribs of the present invention includes a cured film having a uniform film thickness and an appropriate range of film thickness, and the reflectance R measured by the SCI (Specular Component Included) method and measured by the _SCI and SCE (Specular Component Excluded) methods. By reducing the reflectance R _SCE and properly controlling the ratio (R _SCE / R _SCI ) between them, it is possible to simultaneously satisfy the properties of low reflectance and high light-shielding property while maintaining excellent resolution and pattern characteristics.

In addition, when forming the structure for the quantum dot partition wall, since a multilayer pattern having a uniform film thickness suitable for the quantum dot partition wall can be formed through a single development process, it can be usefully applied to a quantum dot display.

1 is a schematic diagram for explaining a general quantum dot device.
2 is a schematic diagram of a structure for a quantum dot partition wall including a two-layer cured film according to an embodiment of the present invention.
3 is a schematic diagram of a structure for a quantum dot partition wall including a three-layer cured film according to an embodiment of the present invention.
4 is a schematic diagram of a structure for a quantum dot partition wall including an n-layer cured film according to an embodiment of the present invention.
5 is a photograph of cross-sections and side surfaces of structures for quantum dot barrier ribs of Examples 1 to 13 measured with an optical microscope.
6 is a photograph of cross-sections and side surfaces of structures for quantum dot barrier ribs of Comparative Examples 1 to 12 measured with an optical microscope.

The present invention is not limited to the contents disclosed below, and may be modified in various forms unless the gist of the invention is changed.

In the present specification, "including" means that other components may be further included unless otherwise specified. In addition, all numbers and expressions representing amounts of components, reaction conditions, and the like described in the present specification are to be understood as being modified by the term "about" in all cases unless otherwise specified.

The structure for quantum dot barrier ribs of the present invention comprises (A) a copolymer; (B) photopolymerizable compounds; (C) photoinitiator; And (D) a colorant containing a black colorant; may include a cured film formed from the photosensitive resin composition containing. At this time, the photosensitive resin composition may optionally further include at least one selected from (E) a surfactant (F) additive and (E) a solvent.

According to one embodiment, the structure for the quantum dot partition wall has a total thickness of 6 µm or more and an optical density of 0.05/µm to 2.0/µm. The optical density is measured by measuring the transmittance at 550 nm using an optical density meter (361T, Xlite), and the optical density (OD, unit:/µm) for a 1 µm thickness of a structure for a quantum dot barrier can be obtained. have.

In addition, the following respective structures for the quantum dot bulkhead reflectance R _SCE as measured by a 360 nm to 740 nm, or 550 nm the reflectivity R _SCI and SCE (Specular Component Excluded) measured by the SCI (Specular Component Included) method at the wavelength of the method Expression can be satisfied.

(Equation 1) R _SCI ≤ 5.0%

(Equation 2) R _SCE ≤ 0.5%

(Equation 3) 2 ≤ R _SCE / R _SCI ≤ 10.

The R _SCI is a measurement of total reflectance including specular reflection that is incident on the surface of an object and reflected at the same angle, and diffuse reflection scattered and reflected in various directions without being specular, and R _SCE is the specular reflection from the total reflectance. Excluding, that is, measuring only diffuse reflection.

Hereinafter, the composition of the photosensitive resin composition will be described in detail for each component.

In the present specification, “(meth)acrylic” means “acrylic” and/or “methacrylic”, and “(meth)acrylate” means “acrylate” and/or “methacrylate”

The weight average molecular weight for each of the following components refers to the weight average molecular weight (g/mol, Da) in terms of polystyrene measured by gel permeation chromatography (GPC, using tetrahydrofuran as an elution solvent).

(A) copolymer

The copolymer (A) used in the present invention is from (a-1) a structural unit derived from an ethylenically unsaturated carboxylic acid, an ethylenically unsaturated carboxylic anhydride, or a combination thereof, (a-2) an ethylenically unsaturated compound containing an aromatic ring Constituent units derived, (a-3) constituent units derived from ethylenically unsaturated compounds containing an epoxy group, and (a-4) different from the above (a-1), (a-2) and (a-3) It may include two or more structural units selected from the group consisting of structural units derived from ethylenically unsaturated compounds.

According to one embodiment, the copolymer (A) may include the constituent units of (a-1) and (a-4).

According to another embodiment, the copolymer (A) may include the constituent units of (a-1), (a-2) and (a-4).

According to another embodiment, the copolymer (A) may include the constituent units of (a-1), (a-3) and (a-4).

According to another embodiment, the copolymer (A) may include the constituent units of (a-1), (a-2) and (a-3).

According to another embodiment, the copolymer (A) may include the constituent units of (a-1), (a-2), (a-3) and (a-4).

The copolymer (A) is an alkali-soluble resin that implements developability, and may also serve as a base for forming a coating film after coating and a structure for implementing a final pattern.

(a-1) structural units derived from ethylenically unsaturated carboxylic acid, ethylenically unsaturated carboxylic anhydride, or a combination thereof

The structural unit (a-1) is derived from an ethylenically unsaturated carboxylic acid, an ethylenically unsaturated carboxylic anhydride, or a combination thereof. The ethylenically unsaturated carboxylic acid and ethylenically unsaturated carboxylic anhydride are polymerizable unsaturated monomers having at least one carboxyl group in the molecule, and as specific examples, unsaturated monocarboxylic acids such as (meth)acrylic acid, crotonic acid, α-chloroacrylic acid, cinnamic acid, etc. ; Unsaturated dicarboxylic acids such as maleic acid, maleic anhydride, fumaric acid, itaconic acid, itaconic anhydride, citraconic acid, citraconic anhydride, and mesaconic acid, and anhydrides thereof; Trivalent or higher unsaturated polycarboxylic acids and anhydrides thereof; Mono [(meth)acryloyloxyalkyl] esters of divalent or higher polycarboxylic acids such as mono[2-(meth)acryloyloxyethyl]succinate and mono[2-(meth)acryloyloxyethyl]phthalate And the like. Constituent units derived from the exemplified compounds may be included in the copolymer alone or in combination of two or more.

The content of the structural unit (a-1) may be 5 to 65 mol%, or 10 to 50 mol%, based on the total number of moles of the constituent units constituting the copolymer (A). When it is within the above range, it may have good developability.

(a-2) Constituent units derived from aromatic ring-containing ethylenically unsaturated compounds

The structural unit (a-2) is derived from an aromatic ring-containing ethylenically unsaturated compound. Specific examples of the aromatic ring-containing ethylenically unsaturated compound include phenyl (meth)acrylate, benzyl (meth)acrylate, 2-phenoxyethyl (meth)acrylate, phenoxydiethylene glycol (meth)acrylate, p- Nonylphenoxypolyethylene glycol (meth)acrylate, p-nonylphenoxypolypropylene glycol (meth)acrylate, tribromophenyl (meth)acrylate; Styrene; Styrene having an alkyl substituent such as methyl styrene, dimethyl styrene, trimethyl styrene, ethyl styrene, diethyl styrene, triethyl styrene, propyl styrene, butyl styrene, hexyl styrene, heptyl styrene and octyl styrene; Styrene having halogens such as fluorostyrene, chlorostyrene, bromostyrene, and iodostyrene; Styrene having an alkoxy substituent such as methoxystyrene, ethoxystyrene, and propoxystyrene; 4-hydroxystyrene, p-hydroxy-α-methylstyrene, acetylstyrene; And vinyl toluene, divinylbenzene, vinylphenol, o-vinylbenzylmethylether, m-vinylbenzylmethylether, p-vinylbenzylmethylether, o-vinylbenzyl glycidyl ether, m-vinylbenzylglycidyl ether, p-vinyl benzyl glycidyl ether, etc. are mentioned. Constituent units derived from the exemplified compounds may be included in the copolymer alone or in combination of two or more. Among these, structural units derived from styrene-based compounds are advantageous in terms of polymerizable properties.

The content of the structural unit (a-2) may be 1 to 50 mol%, or 3 to 40 mol%, based on the total number of moles of the constituent units constituting the copolymer (A). When it is within the above range, it may be more advantageous in terms of chemical resistance.

(a-3) Constituent units derived from ethylenically unsaturated compounds containing an epoxy group

The structural unit (a-3) is derived from an ethylenically unsaturated compound containing an epoxy group. Specific examples of the ethylenically unsaturated compound containing the epoxy group include glycidyl (meth)acrylate, 3,4-epoxybutyl (meth)acrylate, 4,5-epoxypentyl (meth)acrylate, 5,6 -Epoxyhexyl(meth)acrylate, 6,7-epoxyheptyl(meth)acrylate, 2,3-epoxycyclopentyl(meth)acrylate, 3,4-epoxycyclohexyl(meth)acrylate, α-ethyl Glycidyl acrylate, α-n-propylglycidyl acrylate, α-n-butyl glycidyl acrylate, N-(4-(2,3-epoxypropoxy)-3,5-dimethylbenzyl) Acrylamide, N-(4-(2,3-epoxypropoxy)-3,5-dimethylphenylpropyl)acrylamide, 4-hydroxybutyl(meth)acrylate glycidyl ether, 4-hydroxybutylacryl Late glycidyl ether, allyl glycidyl ether, 2-methyl allyl glycidyl ether, etc. are mentioned. Constituent units derived from the exemplified compounds may be included in the copolymer alone or in combination of two or more. Among these, at least one selected from constituent units derived from glycidyl (meth) acrylate, 4-hydroxybutyl acrylate glycidyl ether and 4-hydroxybutyl (meth) acrylate glycidyl ether is copolymerized. And it is more advantageous in terms of improving the strength of the cured film.

The content of the constituent unit (a-3) may be 1 to 40 mol%, or 5 to 20 mol%, based on the total number of moles of the constituent units constituting the copolymer (A). When it is within the above range, it may be more advantageous in terms of residuals during processing and margins during pre-curing.

(a-4) Constituent units derived from ethylenically unsaturated compounds different from (a-1), (a-2) and (a-3) above

Copolymer (A) used in the present invention, in addition to the above (a-1), (a-2) and (a-3), (a-1), (a-2) and (a-3) and May further include structural units derived from different ethylenically unsaturated compounds.

Specific examples of ethylenically unsaturated compounds different from (a-1), (a-2) and (a-3) are methyl (meth) acrylate, ethyl (meth) acrylate, butyl (meth) acrylate , Dimethylaminoethyl (meth)acrylate, isobutyl (meth)acrylate, t-butyl (meth)acrylate, cyclohexyl (meth)acrylate, ethylhexyl (meth)acrylate, tetrahydrofurpril (meth) Acrylate, hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 2-hydroxy-3-chloropropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, glycerol (Meth)acrylate, methyl α-hydroxymethyl acrylate, ethyl α-hydroxymethyl acrylate, propyl α-hydroxymethyl acrylate, butyl α-hydroxymethyl acrylate, 2-methoxyethyl (meth) Acrylate, 3-methoxybutyl (meth)acrylate, ethoxydiethylene glycol (meth)acrylate, methoxytriethylene glycol (meth)acrylate, methoxytripropylene glycol (meth)acrylate, poly(ethylene glycol ) Methyl ether (meth) acrylate, trifluoroethyl (meth) acrylate, trifluoro (meth) acrylate, tetrafluoropropyl (meth) acrylate, hexafluoroisopropyl (meth) acrylate, octa Fluoropentyl (meth)acrylate, heptadecafluorodecyl (meth)acrylate, isobornyl (meth)acrylate, dicyclopentanyl (meth)acrylate, dicyclopentenyl (meth)acrylate, dicyclopentanyl Unsaturated carboxylic acid esters such as oxyethyl (meth)acrylate and dicyclopentenyloxyethyl (meth)acrylate; Tertiary amines containing N-vinyl, such as N-vinylpyrrolidone, N-vinylcarbazole, and N-vinylmorpholine; Unsaturated ethers such as vinyl methyl ether and vinyl ethyl ether; Unsaturated imides, such as N-phenyl maleimide, N-(4-chlorophenyl) maleimide, N-(4-hydroxyphenyl) maleimide, and N-cyclohexyl maleimide, etc. are mentioned. Constituent units derived from the exemplified compounds may be included in the copolymer alone or in combination of two or more.

Further, according to one embodiment, the structural unit (a-4) may include a fluorine-containing compound. For example, it may include at least one selected from trifluoroethyl (meth)acrylate, hexafluoroisopropyl (meth)acrylate, and octafluoropentyl (meth)acrylate.

The content of the structural unit (a-4) may be greater than 0 and 80 mol% or less, or 30 to 70 mol%, based on the total number of moles of the structural units constituting the copolymer (A). When it is within the above range, it may be more advantageous in maintaining the storage stability of the photosensitive resin composition and improving the residual film rate.

According to an embodiment, examples of the copolymer having the structural units (a-1) to (a-4) include (meth)acrylic acid/styrene/methyl(meth)acrylate/glycidyl(meth)acrylate copolymer Copolymer, (meth)acrylic acid/styrene/methyl(meth)acrylate/glycidyl(meth)acrylate/N-phenylmaleimide copolymer, (meth)acrylic acid/styrene/methyl(meth)acrylate/glycidyl (Meth)acrylate/N-cyclohexylmaleimide copolymer, (meth)acrylic acid/styrene/n-butyl (meth)acrylate/glycidyl(meth)acrylate/N-phenylmaleimide copolymer, (meth) ) Acrylic acid/styrene/glycidyl(meth)acrylate/N-phenylmaleimide copolymer and (meth)acrylic acid/styrene/4-hydroxybutylacrylate glycidyl ether/N-phenylmaleimide copolymer, etc. Can be lifted. The copolymer may be contained in one or two or more types in the photosensitive resin composition.

According to one embodiment, examples of the copolymer having the structural units (a-1) and (a-4) include (meth)acrylic acid/methyl (meth)acrylate/trifluoro(meth)acrylate/butyl ( Meth)acrylate copolymer, (meth)acrylic acid/methyl(meth)acrylate/trifluoroethyl(meth)acrylate/butyl(meth)acrylate copolymer, (meth)acrylic acid/methyl(meth)acrylate/ Hexafluoroisopropyl(meth)acrylate/butyl(meth)acrylate copolymer, and (meth)acrylic acid/methyl(meth)acrylate/octafluoropentyl(meth)acrylate/butyl(meth)acrylate copolymer Coalescence, etc. are mentioned.

The weight average molecular weight (Mw) of the copolymer (A) may be 4,000 to 20,000 Da, or may be 6,000 to 15,000 Da. When the weight average molecular weight of the copolymer (A) is within the above range, the improvement of the level difference due to the lower pattern may be advantageous and the pattern development after development may be good.

The content of the copolymer (A) in the total photosensitive resin composition may be 5 to 50% by weight, or 10 to 40% by weight, based on the total weight of the solid content of the photosensitive resin composition (ie, weight excluding the solvent). When it is within the above range, pattern development after development may be good, and properties such as a film residual rate and chemical resistance may be improved.

The copolymer (A) contains a radical polymerization initiator, a solvent, and at least two selected from the group consisting of the structural units (a-1), (a-2), (a-3) and (a-4), and nitrogen It can be prepared by polymerization while slowly stirring after being added.

The radical polymerization initiator is not particularly limited, but 2,2'-azobisisobutyronitrile, 2,2'-azobis(2,4-dimethylvaleronitrile), 2,2'-azobis(4- Azo compounds such as methoxy-2,4-dimethylvaleronitrile), benzoyl peroxide, lauryl peroxide, t-butylperoxypivalate and 1,1-bis(t-butylperoxy)cyclohexane, etc. have. These radical polymerization initiators may be used alone or in combination of two or more.

Any solvent may be used as long as it is used to prepare the copolymer (A), and may be, for example, propylene glycol monomethyl ether acetate (PGMEA).

(B) photopolymerizable compound

The photopolymerizable compound (B) used in the present invention may include a monofunctional or polyfunctional ester compound having one or more ethylenically unsaturated double bonds, and may be a polyfunctional compound having a bifunctional or more particularly in terms of chemical resistance. .

The photopolymerizable compound (B) is dipentaerythritol hexaacrylate, di(trimethylolpropane) tetraacrylate, ethylene glycol di(meth)acrylate, propylene glycol di(meth)acrylate, diethylene glycol di(meth) )Acrylate, triethylene glycol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, polyethylene glycol di(meth)acrylate, polypropylene glycol di(meth)acrylate, glycerin tri(meth)acrylate )Acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tri(meth)acrylate and monoester product of succinic acid, pentaerythritol tetra(meth)acrylate, Dipentaerythritol penta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, monoester product of dipentaerythritol penta(meth)acrylate and succinic acid, pentaerythritol triacrylate hexamethylene diisocyanate ( Reaction product of pentaerythritol triacrylate and hexamethylene diisocyanate), tripentaerythritol hepta (meth)acrylate, tripentaerythritol octa (meth)acrylate, bisphenol A epoxy acrylate, ethylene glycol monomethyl ether acrylate , And may be selected from the group consisting of a mixture thereof, but is not limited thereto.

Commercially available photopolymerizable compounds are (i) as a commercial product of monofunctional (meth)acrylate, Doagosei's Aronix M-101, M-111 and M-114, Nippon Kayaku's KAYARAD T4-110S, T-1420 and T4-120S, and V-158 and V-2311 of Osaka Yuki Chemical High School; (ii) As a commercial product of bifunctional (meth)acrylate, Doagosei's Aaronics M-210, M-240 and M-6200, Nippon Kayaku's KAYARAD HDDA, HX-220 and R-604, Osaka Yuki Gaku High School's V-260, V-312, and V-335 HP; (iii) As a commercial product of trifunctional or higher (meth)acrylate, Doagosei's Aaronics M-309, M-400, M-403, M-405, M-450, M-7100, M-8030, M -8060 and TO-1382, KAYARAD TMPTA, DPHA and DPHA-40H from Nippon Kayaku, V-295, V-300, V-360, V-GPT, V-3PA, V-400 and V-802, etc. are mentioned.

The content of the photopolymerizable compound (B) is 10 to 200 parts by weight, 10 to 150 parts by weight, 15 to 100 parts by weight, or 15 to 90 parts by weight based on 100 parts by weight of the copolymer (A) based on the solid content excluding the solvent. I can. When the content of the photopolymerizable compound is within the above range, excellent pattern developability and coating properties can be obtained while maintaining a constant film residual rate. If the content of the photopolymerizable compound is less than the above range, the development time may be lengthened to affect the process and the residue, and if the content of the photopolymerizable compound is exceeded, the pattern resolution may be excessively increased.

(C) photopolymerization initiator

Any photopolymerization initiator (C) used in the present invention can be used as long as it is a known photopolymerization initiator.

The photoinitiator (C) is an acetophenone compound, a biimidazole compound, a triazine compound, an onium salt compound, a benzoin compound, a benzophenone compound, a polynuclear quinone compound, a thioxanthone compound, a diazo compound, It may be selected from the group consisting of imide sulfonate compounds, oxime compounds, carbazole compounds, sulfonium borate compounds, ketone compounds, and mixtures thereof.

Specifically, the photopolymerization initiator (C) may be an oxime compound, a triazine compound, or a combination thereof or more. More specifically, the photopolymerization initiator may be a combination of an oxime-based and triazine-based compound.

Specific examples of the photopolymerization initiator (C) include 2,2'-azobis (2,4-dimethylvaleronitrile), 2,2'-azobis (4-methoxy-2,4-dimethylvaleronitrile) ), benzoyl peroxide, lauryl peroxide, t-butylperoxypivalate, 1,1-bis(t-butylperoxy)cyclohexane, p-dimethylaminoacetophenone, 2-benzyl-2-(dimethylamino )-1-[4-(4-morpholinyl)phenyl]-1-butanone, 2-hydroxy-2-methyl-1-phenyl-propan-1-one, benzyldimethylketal, benzophenone, benzoinpropyl Ether, diethylthioxanthone, 2,4-bis(trichloromethyl)-6-p-methoxyphenyl-s-triazine, 2-trichloromethyl-5-styryl-1,3,4-oxo Diazole, 9-phenylacridine, 3-methyl-5-amino-((s-triazin-2-yl)amino)-3-phenylcoumarin, 2-(o-chlorophenyl)-4,5- Diphenylimidazolyl dimer, 1-phenyl-1,2-propanedione-2-(o-ethoxycarbonyl)oxime, 1-[4-(phenylthio)phenyl]-octane-1,2-dione -2-(o-benzoyloxime), o-benzoyl-4'-(benzmercapto)benzoyl-hexyl-ketoxime, 2,4,6-trimethylphenylcarbonyl-diphenylphosphonyloxide, hexafluorophos Poro-trialkylphenylsulfonium salt, 2-mercaptobenzimidazole, 2,2'-benzothiazoryldisulfide, 2-[4-(2-phenylethenyl)phenyl]-4,6-bis(trichloromethyl )-1,3,5-triazine, 2-dimethylamino-2-(4-methylbenzyl)-1-(4-morpholin-4-yl-phenyl)-butan-1-one and mixtures thereof However, it is not limited thereto.

For reference, examples of commercially available oxime photopolymerization initiators include OXE-01 (BASF), OXE-02 (BASF), OXE-03 (BASF), N-1919 (ADEKA), NCI-930 (ADEKA), NCI-831 (ADEKA) and SPI-03 (Samyang). Examples of the triazine-based photopolymerization initiator include 2-[4-(2-phenylethenyl)phenyl]-4,6-bis(trichloro). Romethyl)-1,3,5-triazine (Triazine Y, Tronly), etc. are mentioned.

The photopolymerization initiator (C) may be used in an amount of 0.1 to 10 parts by weight, 0.1 to 8 parts by weight, 0.5 to 8 parts by weight, or 0.5 to 6 parts by weight based on 100 parts by weight of the copolymer (A) based on the solid content excluding the solvent. I can.

Specifically, as the photoinitiator, 0.05 to 4 parts by weight of an oxime compound and/or 0.05 to 2 parts by weight of a triazine compound may be used based on 100 parts by weight of the copolymer (A).

More specifically, as the photopolymerization initiator, 0.05 to 3.5 parts by weight of an oxime compound and/or 0.05 to 1.5 parts by weight of a triazine compound may be used based on 100 parts by weight of the copolymer (A). When an oxime compound within the above range is used, development and coating properties may be improved while being highly sensitive. In addition, when a triazine-based compound within the above range is used, a cured film having high sensitivity and excellent chemical resistance and a taper angle during pattern formation can be prepared.

(D) colorant

The photosensitive resin composition of the present invention may contain a colorant (D) to impart light-shielding property, and the colorant (D) may contain a black colorant.

The black colorant may include at least one selected from the group consisting of a black organic colorant and a black inorganic colorant. Specifically, the colorant (D) may include a mixture of a black organic colorant and a black inorganic colorant. In addition, the colorant (D) may include only the black organic colorant or only the black inorganic colorant.

In addition, the colorant (D) may further contain a colorant other than the black.

Specifically, the colorant (D) may include a black organic colorant and a colorant other than black. Alternatively, the colorant (D) may contain a black inorganic colorant and a colorant other than black. Alternatively, the colorant (D) may contain a black organic colorant, a black inorganic colorant, and a colorant other than black. The colorant (D) is preferably a colorant having high color development properties and high heat resistance.

According to one embodiment, the colorant (D) may include a black inorganic colorant and a black organic colorant in a weight ratio of 1 to 50: 50 to 99.

According to one embodiment, the colorant (D) may include a black organic colorant and a colorant other than black in a weight ratio of 60 to 90:10 to 40.

According to one embodiment, the colorant (D) may include a black inorganic colorant and a colorant other than black in a weight ratio of 1 to 40:60 to 99.

According to one embodiment, the colorant (D) may include a black inorganic colorant, a black organic colorant, and a colorant other than black in a weight ratio of 1 to 50: 30 to 80: 5 to 40.

Specific examples of the black organic colorant may be one or more selected from the group consisting of aniline black, lactam black, and perylene black, and specifically, BK-7539 (TOKUSHIKI Co. LTD) including organic black may be used. . In this case, low reflectance, high light-shielding property, optical density, dielectric constant, and the like can be improved.

Specifically, the black organic colorant may lower the energy band gap, and the lower the energy band gap, the lower the degree of light reflection. In addition, the black organic colorant is advantageous in minimizing reflectance since it can absorb all wavelength ranges in the visible light range.

Any known black inorganic colorant and colorant other than black may be used, and may include, for example, compounds classified as pigments in the color index (published by The Society of Dyers and Colorists), , It may also contain a known dye.

Specific examples of the black inorganic colorant include carbon black, titanium black, Cu-Fe-Mn-based oxides, and metal oxides such as synthetic iron black.

The black organic colorant may be included in an amount of 20 to 100% by weight or 40 to 100% by weight based on the total weight of the solid content (ie, excluding the solvent) of the colorant (D). When the black organic colorant satisfies the above range, the pattern development after development is good, and properties such as a residual film rate may be improved. However, when the black organic colorant is less than 20% by weight based on the total weight of the solid content of the colorant (D), the optical density and low reflectance desired in the present invention cannot be obtained.

In addition, the black organic colorant may be included in an amount of 3 to 40 parts by weight or 5 to 30 parts by weight based on 100 parts by weight of the copolymer (A) based on a solid content excluding a solvent. When the black organic colorant satisfies the above range, the pattern development after development is good, and properties such as a residual film rate may be improved.

According to one embodiment, the black inorganic colorant is 0 to 20% by weight or 0 to 10% by weight, specifically 0.01 to 20% by weight or 0.01 to based on the total weight of the solid content of the colorant (D) (ie, excluding the solvent). It may be included in an amount of 10% by weight. If the amount of the black inorganic colorant is too large, the optical density and low reflectance desired in the present invention cannot be obtained.

In addition, the black inorganic colorant may be included in an amount of 0.01 to 10 parts by weight or 0.02 to 5 parts by weight based on 100 parts by weight of the copolymer (A) based on a solid content excluding a solvent. When the black inorganic colorant satisfies the above range, pattern development after development is good, and properties such as a residual film rate may be improved.

In addition, as a specific example of the coloring agent other than the said black, C.I. Pigment Violet 13, 14, 19, 23, 25, 27, 29, 32, 33, 36, 37 and 38; C.I. Pigment Blue 15 (15:3, 15:4, 15:6, etc.), 16, 21, 28, 60, 64, 76, etc. are mentioned. Specifically, the colorant other than black may include at least one colorant selected from the group consisting of a blue colorant and a purple colorant. Among them, C.I pigment blue 15:6 and 60, or C.I. The use of pigment violet 23 is preferable from the viewpoint of reducing reflectance.

According to one embodiment, the blue colorant is 0 to 50% by weight or 0 to 40% by weight, specifically 0.01 to 50% by weight, or 0.01 based on the total weight of the solid content of the colorant (D) (ie, excluding the solvent). It may be included in an amount of to 40% by weight.

In addition, the purple colorant is 0 to 50% by weight or 0 to 40% by weight, specifically 0.01 to 50% by weight, or 0.01 to 40% by weight based on the total weight of the solid content of the colorant (D) (ie, excluding the solvent) May be included in the amount of.

In addition, the blue colorant may be included in an amount of 0.01 to 10 parts by weight or 0.01 to 8 parts by weight based on 100 parts by weight of the copolymer (A) based on the solid content excluding the solvent.

Meanwhile, the purple colorant may be included in an amount of 0.01 to 10 parts by weight or 0.01 to 8 parts by weight based on 100 parts by weight of the copolymer (A) based on the solid content excluding the solvent.

When the blue colorant and the violet colorant are within the above ranges, pattern development after development is good, properties such as residual film ratio and optical density may be improved, and a desired total reflectance characteristic may be obtained. However, when the blue colorant and the violet colorant exceed the above ranges, respectively, the optical density and low reflectance desired in the present invention cannot be satisfied.

The content of the colorant (D) may be 1 to 40 parts by weight, or 2 to 30 parts by weight based on 100 parts by weight of the copolymer (A) based on the solid content excluding the solvent. When the content of the colorant (D) satisfies the above range, the pattern development after development may be good and properties such as a residual film rate may be improved. If the content of the colorant (D) exceeds the above range, the optical density and low reflectance desired in the present invention cannot be achieved.

The colorant (D) used in the present invention may be used in a form in which a dispersant, a dispersion resin (binder), a solvent, and the like are mixed in order to disperse the colorant in the photosensitive resin composition.

Examples of the dispersant may be any one known as a colorant dispersant, and specific examples include cationic surfactants, anionic surfactants, nonionic surfactants, amphoteric surfactants, silicone surfactants, fluorine surfactants, etc. Can be mentioned. Commercially available dispersants include BYK's Disperbyk -182, -183, -184, -185, -2000, -2150, -2155, -2163, -2164, and the like. These can be used alone or in combination of two or more. The dispersant may be used by being added to the colorant by surface-treating the colorant in advance, or may be added together with the colorant when preparing the photosensitive resin composition.

In addition, after mixing the colorant (D) together with a dispersion resin, it can be used to prepare a photosensitive resin composition. The dispersion resin used at this time may be the copolymer (A) described in the present invention, a known copolymer, or a mixture thereof.

That is, the colorant (D) may be in the form of a colored dispersion.

The coloring dispersion is prepared by mixing the coloring agent (D), the dispersion resin, and the dispersing agent at the same time and then milling, or premixing the coloring agent (D) and the dispersing agent as described above, and then mixing and milling the dispersion resin. Can be manufactured. In this case, the milling is performed until the average diameter of the raw materials of the colored dispersion becomes 50 to 250 nm, 50 to 150 nm, or 50 to 110 nm. When it is within the above range, the multilayer structure is not formed in the colored dispersion, so that a more uniform colored dispersion can be obtained.

The colored dispersion of the present invention may be included in an amount of 20 to 70% by weight or 30 to 60% by weight based on the total weight of the solid content of the photosensitive resin composition.

The structure for quantum dot partition walls obtained by using the photosensitive resin composition containing the colorant (D) may be a multilayer cured film including two or more cured films, and the total thickness may be 6 μm or more. In addition, the structure for the quantum dot partition wall may implement an optical density of 0.05 / ㎛ to 2.0 / ㎛. Further, the reflectance R _SCI measured by the SCI (Specular Component Included) method at a wavelength of 360 nm to 740 nm, or 550 nm is 5.0% or less, 4.8% or less, 4.6% or less, 4.0% to 4.8%, or 4.0% to It may be 4.6%, and the reflectance R _SCE measured by the Specular Component Excluded (SCE) method may be 0.5% or less, 0.4% or less, 0.1% to 0.5%, 0.1% to 0.4%, or 0.2% to 0.4% reflectance. . In addition, the ratio between the R _SCI and R _SCE (R _SCE / R _SCI ) may be 2 to 10, 2 to 9, 2 to 8, 3 to 8, 4 to 8, or 4 to 7.5. When within the above range, characteristics of low reflectance and high light-shielding can be satisfied, and light bleeding such as red or green can be prevented. If any one or more of R _SCI , R _SCE and R _SCE / R _SCI is out of the above range, low reflectance and high light-shielding characteristics cannot be simultaneously satisfied.

(E) surfactant

The photosensitive resin composition of the present invention may further include a surfactant (E) for improving coating properties and preventing defects.

The type of the surfactant (E) is not particularly limited, but may be, for example, a fluorine-based surfactant or a silicone-based surfactant.

Commercially available products of the silicone-based surfactant include Dow Corning Toray Silicone's DC3PA, DC7PA, SH11PA, SH21PA, SH8400, GE Toshiba Silicone's TSF-4440, TSF-4300, TSF-4445, TSF-4446, TSF-4460, TSF-4452. And BYK's BYK-333, BYK-307, BYK-3560, BYK UV-3535, BYK-361N, BYK-354 and BYK-399. These can be used alone or in combination of two or more.

Commercially available products of the fluorine-based surfactant include Megaface F-470, F-471, F-475, F-482, F-489, and F-563 manufactured by Dinippon Ink Chemical Co., Ltd. have.

Among the above surfactants, BYK's BYK-333, BYK-307, and DIC's F-563 are preferred from the viewpoint of coating properties of the resin composition.

The content of the surfactant (E) may be used in an amount of 0.01 to 5 parts by weight, 0.1 to 3 parts by weight, or 0.1 to 1 part by weight based on 100 parts by weight of the copolymer (A) based on the solid content excluding the solvent. When the content of the surfactant is within the above range, coating of the photosensitive resin composition may be smooth.

(F) additive

In addition, the photosensitive resin composition of the present invention may further include at least one additive selected from the group consisting of an epoxy compound, a photobase generator, a thiol-based compound, and a compound derived from an epoxy resin within a range that does not degrade physical properties. have.

The epoxy compound may be an unsaturated monomer containing at least one epoxy group, or a homo oligomer or hetero oligomer thereof. Examples of unsaturated monomers containing one or more epoxy groups include glycidyl (meth)acrylate, 4-hydroxybutyl acrylate glycidyl ether, 3,4-epoxybutyl (meth)acrylate, 4,5 -Epoxypentyl (meth)acrylate, 5,6-epoxyhexyl (meth)acrylate, 6,7-epoxyheptyl (meth)acrylate, 2,3-epoxycyclopentyl (meth)acrylate, 3,4- Epoxycyclohexyl (meth)acrylate, α-ethylglycidyl acrylate, α-n-propylglycidyl acrylate, α-n-butyl glycidyl acrylate, N-(4-(2,3- Epoxypropoxy)-3,5-dimethylbenzyl)acrylamide, N-(4-(2,3-epoxypropoxy)-3,5-dimethylphenylpropyl)acrylamide, allylglycidyl ether, 2-methyl Allyl glycidyl ether, o-vinylbenzyl glycidyl ether, m-vinylbenzyl glycidyl ether, p-vinylbenzyl glycidyl ether, or mixtures thereof, specifically, glycidyl (meth)acrylic It can be a rate.

Commercially available products of homo oligomers of unsaturated monomers containing at least one epoxy group include MIPHOTO GHP-03HHP (glycidyl methacrylate, manufactured by Miwon).

The epoxy compound may further include the following structural units.

Specific examples include styrene; Styrene having an alkyl substituent such as methyl styrene, dimethyl styrene, trimethyl styrene, ethyl styrene, diethyl styrene, triethyl styrene, propyl styrene, butyl styrene, hexyl styrene, heptyl styrene and octyl styrene; Styrene having halogens such as fluorostyrene, chlorostyrene, bromostyrene, and iodostyrene; Styrene having an alkoxy substituent such as methoxy styrene, ethoxy styrene, and propoxy styrene; p-hydroxy-α-methylstyrene, acetylstyrene; Aromatic ring-containing ethylenically unsaturated compounds such as divinylbenzene, vinylphenol, o-vinylbenzylmethylether, m-vinylbenzylmethylether, and p-vinylbenzylmethylether; Methyl (meth) acrylate, ethyl (meth) acrylate, butyl (meth) acrylate, dimethylaminoethyl (meth) acrylate, isobutyl (meth) acrylate, t-butyl (meth) acrylate, cyclohexyl ( Meth)acrylate, ethylhexyl (meth)acrylate, tetrahydrofurpril (meth)acrylate, hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 2-hydroxy-3- Chloropropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, glycerol (meth)acrylate, methyl α-hydroxymethylacrylate, ethyl α-hydroxymethylacrylate, propyl α-hydroxymethyl Acrylate, butyl α-hydroxymethyl acrylate, 2-methoxyethyl (meth) acrylate, 3-methoxybutyl (meth) acrylate, ethoxydiethylene glycol (meth) acrylate, methoxytriethylene glycol ( Meth) acrylate, methoxytripropylene glycol (meth) acrylate, poly (ethylene glycol) methyl ether (meth) acrylate, phenyl (meth) acrylate, benzyl (meth) acrylate, 2-phenoxyethyl (meth) )Acrylate, phenoxydiethylene glycol (meth)acrylate, p-nonylphenoxypolyethylene glycol (meth)acrylate, p-nonylphenoxypolypropylene glycol (meth)acrylate, tetrafluoropropyl (meth)acrylate , 1,1,1,3,3,3-hexafluoroisopropyl (meth)acrylate, octafluoropentyl (meth)acrylate, heptadecafluorodecyl (meth)acrylate, tribromophenyl ( Meth)acrylate, isobornyl (meth)acrylate, dicyclopentanyl (meth)acrylate, dicyclopentenyl (meth)acrylate, dicyclopentanyloxyethyl (meth)acrylate, dicyclopentenyloxyethyl ( Unsaturated carboxylic acid esters such as meth)acrylate; Tertiary amines having N-vinyl, such as N-vinylpyrrolidone, N-vinylcarbazole, and N-vinylmorpholine; Unsaturated ethers such as vinyl methyl ether and vinyl ethyl ether; Constituent units derived from unsaturated imides such as N-phenylmaleimide, N-(4-chlorophenyl)maleimide, N-(4-hydroxyphenyl)maleimide, and N-cyclohexylmaleimide. . Constituent units derived from the exemplified compounds may be included in the epoxy compound alone or in combination of two or more.

The epoxy compound may have a weight average molecular weight of 100 to 30,000 Da. Specifically, the epoxy compound may have a weight average molecular weight of 100 to 10,000 Da. When the weight average molecular weight of the epoxy compound is 100 Da or more, the hardness of the cured film may be more excellent, and when the weight average molecular weight of the epoxy compound is less than 30,000 Da, the thickness of the cured film becomes uniform and the step difference is reduced, making it more suitable for planarization.

The epoxy compound may be used in an amount of 0 to 3 parts by weight, 0.01 to 3 parts by weight, or 0.1 to 1 part by weight based on 100 parts by weight of the copolymer (A) on a solid content excluding a solvent. The subsequent pattern development is good, and chemical resistance and planarization can be improved.

In addition, the photobase generator may include a compound having a property of generating a base by irradiation of light (active energy ray). For example, a high-sensitivity compound having a photosensitive region may be included even at a wavelength of 300 nm or more.

The photobase generator may include a crosslinkable compound including a polyamine photobase generator component. In the present invention, by including such a photobase generator, it is possible to cure at a low temperature and/or within a short time when preparing a cured film, and to form a fine pattern. In addition, since the photobase generator generates a base due to irradiation of light (UV), it is not inhibited by oxygen in the air, and is useful for preventing corrosion or denaturation of the cured film.

When the photobase generator is exposed to light, the pendant photobase group of the polyamine photobase generator component is fragmented or photodecomposed to provide an amine group, and the amine group reacts with the amine-reactive group of the multifunctional amine-reactive component. (Meth)acrylate copolymer component can be crosslinked

Depending on the embodiment, the applicable photobase generator is WPBG-018 (Wako, CAS No. 122831-05-7, 9-anthrimethyl-N,N-diethylcarbamate), WPBG-027 (CAS No. 1203424-93-4, (E)-1-piperidino-3-(2-hydroxyphenyl)-2-propen-1-one), WPBG-266 (CAS No. 1632211-89-2, 1 ,2-diisopropyl-3-bis(dimethylamino)methylene]guanidiium 2-(3-benzoylphenyl)propionate) and WPBG-300 (CAS No. 1801263-71-7, 1,2-di Cyclohexyl-4,4,5,5-tetramethylbiguanidiium n-butyltriphenylborate), and the like. The photobase generator may be used alone or in combination of two or more.

The content of the photobase generator may be 0 to 10 parts by weight, specifically 0 to 6 parts by weight, and more specifically 0.01 to 5 parts by weight, based on 100 parts by weight of the copolymer (A) based on the solid content excluding the solvent. In the above range, pattern development after development may be good, and chemical resistance may be excellent.

The thiol-based compound may be used as a free radical or a catalytic additive, and may increase the photocuring conversion rate through UV irradiation or thermal reaction, and may increase the epoxy conversion rate by lowering the reaction energy through thermal reaction. The thiol-based compound has an effect of preventing radical extinction due to oxygen and crosslinking with the photopolymerizable compound (B) to increase the degree of crosslinking, thereby making the structure more compact and improving the degree of curing even at low temperatures.

Examples of the thiol-based compound are compounds having two or more mercapto groups in the molecule, and examples thereof include aliphatic thiol compounds and aromatic thiol compounds.

As the aliphatic thiol compound, for example, methanedithiol, 1,2-ethanedithiol, 1,2-propanedithiol, 1,3-propanedithiol, 1,4-butanedithiol, 1,5-pentane Dithiol, 1,6-hexanedithiol, 1,2-cyclohexanedithiol, 3,4-dimethoxybutane-1,2-dithiol, 2-methylcyclohexane-2,3-dithiol, 1, 2-dimercaptopropylmethylether, 2,3-dimercaptopropylmethylether, bis(2-mercaptoethyl)ether, tetrakis(mercaptomethyl)methane, bis(mercaptomethyl)sulfide, bis(mercapto) Methyl) disulfide, bis (mercaptoethyl) sulfide, bis (mercaptoethyl) disulfide, bis (mercaptomethylthio) methane, bis (2-mercaptoethylthio) methane, 1,2-bis (mer Captomethylthio)ethane, 1,2-bis(2-mercaptoethylthio)ethane, 1,3-bis(mercaptomethylthio)propane, 1,3-bis(2-mercaptoethylthio)propane, 1 ,2,3-tris(mercaptomethylthio)propane, 1,2,3-tris(2-mercaptoethylthio)propane, 1,2,3-tris(3-mercaptopropylthio)propane, 4- Mercaptomethyl-1,8-dimercapto-3,6-dithiaoctane, 5,7-dimercaptomethyl-1,11-dimercapto-3,6,9-trithiaundecane, 4,7-dimer Captomethyl-1,11-dimercapto-3,6,9-trithiaundecane, 4,8-dimercaptomethyl-1,11-dimercapto-3,6,9-trithiaundecane, 1,1 ,3,3-tetrakis(mercaptomethylthio)propane, 4,6-bis(mercaptomethylthio)-1,3-ditian, 2-(2,2-bis(mercaptomethylthio)ethyl) -1,3-dithiethane, tetrakis(mercaptomethylthiomethyl)methane, tetrakis(2-mercaptoethylthiomethyl)methane, bis(2,3-dimercaptopropyl)sulfide, 2,5-bis Mercaptomethyl-1,4-dithian, ethylene glycol bis (2-mercaptoacetate), ethylene glycol bis (3-mercaptopropionate), diethylene glycol bis (2-mercaptoacetate), diethylene glycol Bis (3-mercaptopropionate), 2,3-dimercapto-1-propanol (3-mercaptopropionate), 3-mercapto-1,2-propanediolbis (2-mercaptoacetate) , 3-mercapto-1,2-propanedioldi (3-mercaptopropionate), trimethylolpropane tris (2-mercaptoacetate), ditrimethylolpropane tetrakis (2-mer) Captoacetate), trimethylolpropanetris (3-mercaptopropionate), ditrimethylolpropanetetrakis (3-mercaptopropionate), trimethylolethantris (2-mercaptoacetate), trimethylolethantris (3-mercaptopropionate), pentaerythritol tetrakis (2-mercaptoacetate), dipentaerythritol hexa (2-mercaptoacetate), pentaerythritol di (3-mercaptopropionate), Pentaerythritol tris (3-mercaptopropionate), pentaerythritol tetra (3-mercaptopropionate) (PETMP), dipentaerythritol hexa (3-mercaptopropionate), glycerin di (2) -Mercaptoacetate), glycerin tris (2-mercaptoacetate), glycerin di (3-mercaptopropionate), glycerin tris (3-mercaptopropionate), 1,4-cyclohexanediolbis (2 -Mercaptoacetate), 1,4-cyclohexanediolbis(3-mercaptopropionate), hydroxymethylsulfidebis(2-mercaptoacetate), hydroxymethylsulfidebis(3-mercaptopro) Cypionate), hydroxyethylsulfide (2-mercaptoacetate), hydroxyethylsulfide (3-mercaptopropionate), hydroxymethyldisulfide (2-mercaptoacetate), hydroxymethyldisulfide (3-mercaptopropionate), thioglycolic acid bis (2-mercaptoethyl ester), thiodipropionic acid bis (2-mercaptoethyl ester), N,N',N”-tris (β-mercapto Propylcarbonyloxyethyl) isocyanurate, and the like.

As an aromatic thiol compound, for example, 1,2-dimercaptobenzene, 1,3-dimercaptobenzene, 1,4-dimercaptobenzene, 1,2-bis(mercaptomethyl)benzene, 1,4-bis( Mercaptomethyl)benzene, 1,2-bis(mercaptoethyl)benzene, 1,4-bis(mercaptoethyl)benzene, 1,2,3-trimercaptobenzene, 1,2,4-trimercaptobenzene, 1,3,5-trimercaptobenzene, 1,2,3-tris(mercaptomethyl)benzene, 1,2,4-tris(mercaptomethyl)benzene, 1,3,5-tris(mercaptomethyl) Benzene, 1,2,3-tris(mercaptoethyl)benzene, 1,3,5-tris(mercaptoethyl)benzene, 1,2,4-tris(mercaptoethyl)benzene, 2,5-toluenedity Ol, 3,4-toluenedithiol, 1,4-naphthalenedithiol, 1,5-naphthalenedithiol, 2,6-naphthalenedithiol, 2,7-naphthalenedithiol, 1,2,3,4- Tetramercaptobenzene, 1,2,3,5-tetramercaptobenzene, 1,2,4,5-tetramercaptobenzene, 1,2,3,4-tetrakis(mercaptomethyl)benzene, 1, 2,3,5-tetrakis(mercaptomethyl)benzene, 1,2,4,5-tetrakis(mercaptomethyl)benzene, 1,2,3,4-tetrakis(mercaptoethyl)benzene, 1 ,2,3,5-tetrakis(mercaptoethyl)benzene, 1,2,4,5-tetrakis(mercaptoethyl)benzene, 2,2'-dimercaptobiphenyl, 4,4'-dimercap Tobiphenyl, etc. are mentioned.

The thiol-based compound may be an aliphatic thiol compound, specifically pentaerythritol tetra (3-mercaptopropionate) (PETMP), SIRIUS-501 (SUBARU-501, Osaka Yuki Chemical Industry Co., Ltd.), and glycoluril And glycoluril derivatives (TS-G, SHIKOKU CHEMICALS CORPORATION), and the like.

The content of the thiol-based compound may be 0 to 10 parts by weight, 0 to 6 parts by weight, or 0.01 to 5 parts by weight based on 100 parts by weight of the copolymer (A) based on the solid content excluding the solvent. When the content of the thiol-based compound is within the above range, pattern development after development may be good and chemical resistance may be excellent.

The photosensitive resin composition of the present invention may further include a compound derived from an epoxy resin. The compound derived from the epoxy resin contains at least one double bond, may have a cardo-based skeletal structure, may be a novolak-based resin, and be an acrylic resin containing a double bond in the side chain. May be.

The compound derived from the epoxy resin may be a compound having a weight average molecular weight (Mw) in terms of polystyrene measured by gel permeation chromatography of 3,000 to 18,000 Da, or 5,000 to 10,000 Da. When the content of the compound derived from the epoxy resin is within the above range, the pattern development after development is good, and properties such as chemical resistance and elastic resilience may be improved.

Specifically, the compound derived from the epoxy resin may be a compound having a cardo-based skeleton structure represented by the following Formula 1:

[Formula 1]

In Formula 1,

,

,

또는

이고; L₁은 각각 독립적으로 C_1-10 알킬렌기, C_3-20 시클로알킬렌기 또는 C_1-10 알킬렌옥시기이며; R₁ 내지 R₇은 각각 독립적으로 H, C_1-10 알킬기, C_1-10 알콕시기, C_2-10 알케닐기 또는 C_6-14 아릴기이고; R₈은 H, 메틸기, 에틸기, CH₃CHCl-, CH₃CHOH-, CH₂=CHCH₂- 또는 페닐기이고; n은 0 내지 10의 정수이다.Each X independently

,

,

or

ego; Each L ₁ is independently a C _1-10 alkylene group, a C _3-20 cycloalkylene group, or a C _1-10 alkyleneoxy group; R ₁ to R ₇ are each independently H, C _1-10 alkyl group, C _1-10 alkoxy group, C _2-10 alkenyl group, or C _6-14 aryl group; R ₈ is H, methyl, ethyl, CH ₃ CHCl-, CH ₃ CHOH-, CH ₂ =CHCH ₂ -or a phenyl group; n is an integer from 0 to 10.

Specific examples of the C _1-10 alkylene group include methylene group, ethylene group, propylene group, isopropylene group, butylene group, isobutylene group, sec-butylene group, t-butylene group, pentylene group, isopentylene group, t- Pentylene group, hexylene group, heptylene group, octylene group, isooctylene group, t-octylene group, 2-ethylhexylene group, nonylene group, isononylene group, decylene group, isodecylene group, and the like. Specific examples of the C _3-20 cycloalkylene group include a cyclopropylene group, a cyclobutylene group, a cyclopentylene group, a cyclohexylene group, a cycloheptylene group, a decalinylene group, and an adamantylene group. Specific examples of the C _1-10 alkyleneoxy group include methyleneoxy group, ethyleneoxy group, propyleneoxy group, butyleneoxy group, sec-butyleneoxy group, t-butyleneoxy group, pentyleneoxy group, hexyleneoxy group, heptyl Renoxy group, octyleneoxy group, 2-ethyl-hexyleneoxy group, etc. are mentioned. Specific examples of the C _1-10 alkyl group include methyl group, ethyl group, propyl group, isopropyl group, butyl group, isobutyl group, sec-butyl group, t-butyl group, pentyl group, isopentyl group, t-pentyl group, Hexyl group, heptyl group, octyl group, isooctyl group, t-octyl group, 2-ethylhexyl group, nonyl group, isononyl group, decyl group, isodecyl group, and the like. Specific examples of the C _1-10 alkoxy group include methoxy group, ethoxy group, propoxy group, butyloxy group, sec-butoxy group, t-butoxy group, pentoxy group, hexyloxy group, heptoxy group, octyloxy group, 2 -Ethyl-hexyloxy group, etc. are mentioned. Specific examples of the C _2-10 alkenyl group include a vinyl group, an allyl group, a butenyl group, and a propenyl group. Specific examples of the C _6-14 aryl group include a phenyl group, a tolyl group, a xylyl group, and a naphthyl group.

As an example, a compound derived from an epoxy resin having a cardo-based skeleton structure may be prepared by a synthetic route as shown in Scheme 1 below.

[Scheme 1]

In Scheme 1 above,

Hal is halogen; X, R ₁ , R ₂ and L ₁ are as defined in Formula 1 above.

The compound derived from the epoxy resin having the cardo-based skeleton structure is a compound obtained by reacting the epoxy resin having the cardo-based skeleton structure with an unsaturated basic acid to obtain an epoxy adduct and then reacting it with a polybasic acid anhydride, or It may be a compound obtained by reacting with a monofunctional or polyfunctional epoxy compound. As the unsaturated basic acid, known ones such as acrylic acid, methacrylic acid, crotonic acid, cinnamic acid, and sorbic acid can be used. Examples of the polybasic acid anhydride include succinic anhydride, maleic anhydride, trimellitic anhydride, pyromellitic anhydride, 1,2,4,5-cyclohexanetetracarboxylic dianhydride (1,2,4,5-cyclohexane tetracarboxylic dianhydride), hexa Known things, such as hydrophthalic anhydride, can be used. The monofunctional or polyfunctional epoxy compound is glycidyl methacrylate, methyl glycidyl ether, ethyl glycidyl ether, propyl glycidyl ether, isopropyl glycidyl ether, butyl glycidyl ether, isobutyl glycidyl ether Known things, such as cidyl ether and bisphenol Z glycidyl ether, can be used.

As an example, a compound derived from an epoxy resin having a cardo-based skeleton structure may be prepared by a synthetic route as shown in Scheme 2 below.

[Scheme 2]

In Scheme 2 above,

Each R ₉ is independently H, a C _1-10 alkyl group, a C _1-10 alkoxy group, a C _2-10 alkenyl group, or a C _6-14 aryl group; R ₁₀ and R ₁₁ are each independently a saturated or unsaturated aromatic or aliphatic ring having 6 carbon atoms; n is an integer from 1 to 10; X, R ₁ , R ₂ and L ₁ are as defined in Formula 1 above.

When using a compound derived from an epoxy resin having the cardo-based skeleton structure, the cardo-based skeleton structure further improves the adhesion between the cured product and the substrate, alkali resistance, workability, strength, etc., and when removing the uncured part after development The image can be formed more precisely in the fine pattern.

The content of the compound derived from the epoxy resin is 0 to 50 parts by weight, specifically 0 to 40 parts by weight, more specifically 0.01 to 50 parts by weight, based on 100 parts by weight of the copolymer (A) based on the solid content excluding the solvent. , 0.01 to 40 parts by weight or 0.01 to 30 parts by weight may be. When a compound derived from an epoxy resin is included within the above range, developability and a pattern shape after development may be good.

(G) solvent

The photosensitive resin composition of the present invention may be prepared as a liquid composition in which the above-described components are mixed with a solvent. The solvent (G) has compatibility with the above-described photosensitive resin composition components, but does not react with them, and any known solvent used in the photosensitive resin composition may be used.

Examples of such a solvent (G) include glycol ethers such as ethylene glycol monoethyl ether; Ethylene glycol alkyl ether acetates such as ethyl cellosolve acetate; Esters such as ethyl 2-hydroxypropionate; Diethylene glycols such as diethylene glycol monomethyl ether; Propylene glycol alkyl ether acetates such as propylene glycol monomethyl ether acetate and propylene glycol propyl ether acetate; Alkoxyalkyl acetates, such as 3-methoxybutyl acetate, are mentioned. The solvent (G) may be used alone or in combination of two or more.

The content of the solvent (G) is not particularly limited, but from the viewpoint of coating properties and stability of the final photosensitive resin composition, 50 to 200 parts by weight based on 100 parts by weight of the copolymer (A) based on the solid content excluding the solvent or It may be 80 to 150 parts by weight. When the solvent content is within the above range, it is possible to obtain an effect of smooth coating of the resin composition and a small delay margin that may occur in a working process.

In addition, the photosensitive resin composition of the present invention may further include other additives such as antioxidants and stabilizers within a range that does not deteriorate physical properties.

The photosensitive resin composition including the above components may be mixed by a conventional method and provided as a liquid composition. For example, a colorant is mixed with a dispersion resin, a dispersant, and a solvent in advance, and dispersed using a bead mill or the like until the average particle diameter of the colorant reaches a desired level to prepare a colored dispersion. At this time, some or all of a surfactant and/or a copolymer may be blended. To this colored dispersion, the remainder of the copolymer and surfactant, a photopolymerizable compound and a photopolymerization initiator are added, and if necessary, an additive such as an epoxy compound or an additional solvent is further mixed to a predetermined concentration, and then sufficiently stirred to form a liquid phase. A photosensitive resin composition can be produced.

The present invention can provide a structure for a quantum dot partition wall in the form of a cured film by applying and curing the photosensitive resin composition on a substrate. The structure for the quantum dot partition wall may include a cured film of two or more layers.

Specifically, the present invention includes a first cured film formed from a first photosensitive resin composition and a second cured film formed from a second photosensitive resin composition on the first cured film,

The first photosensitive resin composition, the second photosensitive resin composition, or both of them (A) a copolymer; (B) photopolymerizable compounds; (C) photoinitiator; And (D) a colorant including a black colorant, and having a total thickness of 6 μm or more, a structure for a quantum dot partition wall may be provided.

The first photosensitive resin composition and the second photosensitive resin composition may be the same or different.

Further, according to an embodiment, the first photosensitive resin composition and the second photosensitive resin composition may contain fluorine or may not contain fluorine.

For example, the first photosensitive resin composition may not contain fluorine, and the second photosensitive resin composition may contain fluorine.

In addition, both the first photosensitive resin composition and the second photosensitive resin composition may not contain fluorine.

If the first photosensitive resin composition or the second photosensitive resin composition contains fluorine, the structural unit (a-4) may contain a fluorine-containing compound when preparing the copolymer (A) included in the photosensitive resin composition. have. For example, the (a-4) is trifluoroethyl (meth)acrylate, tetrafluoropropyl (meth)acrylate, pentafluorobenzyl (meth)acrylate, hexafluoroisopropyl (meth) From acrylate, heptadecafluoro-1-nonyl (meth)acrylate, octafluoropentyl (meth)acrylate, 4-trifluoromethyl-4-hydroxy-5,5,5-trifluoro- It may include at least one selected from the group consisting of 2-pentyl (meth)acrylate and trimethoxysilylpropyl methacrylate.

Meanwhile, the structure for a quantum dot partition wall according to an embodiment may be a multilayer cured film composed of two layers including one cured film and a second cured film.

Specifically, the multilayer cured film may include a first cured film formed by coating and curing a first photosensitive resin composition on a substrate; And a second cured layer formed by coating and curing a second photosensitive resin composition on the first cured layer.

In the two-layer multilayer cured film, the first and second cured films may each have a thickness of 10 µm or less, specifically 4 µm to 9 µm, and more specifically 5 µm to 9 µm. In addition, the total thickness of the two-layer multi-layer cured film, that is, the total thickness of the first cured film and the second cured film may be 6 µm to 20 µm, specifically 6 µm to 18 µm, and more specifically 10 µm to 18 µm. .

The structure for a quantum dot partition wall according to another embodiment may be a multilayer cured film composed of three layers including a first cured film, a second cured film, and a third cured film.

In the three-layer multilayer cured film, the thickness of the first cured film, the second cured film, and the third cured film may be 8 µm or less, specifically 2 µm to 8 µm, and more specifically 3 µm to 8 µm. have. In addition, the total thickness of the three-layer multilayer cured film, that is, the total thickness of the first to third cured films may be 6 µm to 24 µm, specifically 9 µm to 24 µm, and more specifically 12 µm to 24 µm. .

The structure for a quantum dot partition wall according to another embodiment may be a multilayer cured film composed of n layers including a first cured film, a second cured film, a third cured film, and an n-th cured film. In this case, n may be 4 or more, specifically 4 to 10, 4 to 8, 4 to 6, or 4 to 5.

In the multilayer cured film consisting of the n-layer, each thickness of the n-th cured film including the first cured film and the second cured film is 8 µm or less, specifically 1.5 µm to 8 µm, more specifically 2 µm to 8 µm Can be In addition, the total thickness of the n-layer multilayer cured film may be 6 µm to 80 µm, specifically 6 µm to 40 µm, and more specifically 6 µm to 30 µm.

The structure for a quantum dot partition wall according to an embodiment of the present invention has a high total film thickness as described above, so that the colorant content can achieve at least superior optical density (high light-shielding property) and low reflectivity than in the prior art.

In the structure for the quantum dot barrier rib, the thickness and optical density of the cured layers of each of the multilayer cured layers may be the same or different. For example, the thickness of the first cured layer may be the same as or different from the thickness of the second cured layer. In addition, the optical density of the first cured film may be the same as or different from the optical density of the second cured film.

The thickness of the cured film can be evaluated as the thickness of the cured film by measuring the height deviation through the vertical motion of the device probe tip using SCAN PLUS, an alpha-step profilometer. The thickness of the multilayer cured film is an initial film thickness, and may mean the thickness at the time of forming the multilayer cured film, that is, the thickness of the film produced after preliminary curing prior to exposure and development steps when manufacturing a structure for a quantum dot partition wall.

When obtaining a single-layer cured film using the photosensitive resin composition, there is a problem that the cured film is inevitably implemented as a thin film. In addition, when a single-layer cured film is used for quantum dot barriers, the thickness is thin, so when the quantum dot solution is dropped, the barrier may overflow, and if it overflows the barrier, color stains due to mixed colors may occur or reliability may decrease. have. In addition, if a single layer is applied with a thick thickness and cured, it is difficult to implement a uniform cured film, and it is difficult to implement a uniform cured film, and it is difficult to use it for a quantum dot partition because stains due to thickness variation are caused or because a quantum dot solution is overflowed by a partition having a lower thickness.

However, the minimum film thickness of the multilayer cured film (structure for quantum dot barrier ribs) according to one embodiment is 6 µm, and also has an advantage of being able to block light from the barrier rib when the quantum dots emit light of various colors by applying a colorant. In addition, it is possible to form a multilayer pattern having a uniform film thickness by controlling the number and thickness of each cured film, and when the quantum dot solution is filled by inkjet method by applying a fluorine-containing cured film to the final n layer, the discharged quantum dot solution It can be prevented from spilling out to this adjacent area.

In the present invention, a structure for a quantum dot partition wall in the form of a multilayer cured film can be manufactured by the following method. When forming a structure for a quantum dot partition wall, a multilayer pattern having a uniform film thickness suitable for a quantum dot partition wall can be formed through a single development process. Do.

Specifically, the method of manufacturing a structure for a quantum dot partition wall of the present invention comprises the steps of forming a first cured film by coating and curing a first photosensitive resin composition on a substrate (S1); Forming a second cured film by applying and curing a second photosensitive resin composition on the first cured film (S2); And exposing and developing a multilayer cured film including the first cured film and the second cured film to form a pattern, and then curing (S3),

The first photosensitive resin composition, the second photosensitive resin composition, or both of them (A) a copolymer; (B) photopolymerizable compounds; (C) photoinitiator; And (D) a colorant including a black colorant.

In more detail, a method of manufacturing a structure for a quantum dot partition wall according to an embodiment may include a step (S1) of forming a first cured film by applying and curing a first photosensitive resin composition on a substrate.

In the step of forming the first cured film, the photosensitive resin composition according to the present invention is subjected to a predetermined pre-treatment on the substrate by using a method such as spin or slit coating, roll coating, screen printing, or applicator method, For example, the first cured film may be formed by applying to a thickness of 4 μm to 8 μm and then curing to remove the solvent.

As the substrate, various inorganic substrates such as a glass substrate, an ITO evaporated substrate, a SiN _x evaporated substrate or a SiON _x evaporated substrate may be used, and any material may be used as long as the substrate can be used to form a structure for quantum dot barrier ribs.

When forming the first cured film, curing may be performed at 70° C. to 140° C. for 100 seconds to 800 seconds. The curing may be performed at one time or may be divided two or more times to be cured.

When the curing is performed at one time, it is performed at 70 to 140° C. for 100 to 800 seconds, specifically at 80 to 130° C. for 150 to 600 seconds, specifically at 90 to 130° C. for 150 to 500 seconds can do.

When the curing is performed by dividing two or more times, for example, after pre-curing at 70° C. to 100° C. for 50 seconds to 400 seconds, specifically at 70° C. to 90° C. for 100 seconds to 300 seconds, and then 80° C. to Curing may be performed at 140° C. for 100 seconds to 500 seconds, specifically at 90° C. to 130° C. for 100 seconds to 300 seconds.

A method of manufacturing a structure for a quantum dot partition wall according to an embodiment may include forming a second cured layer by applying and curing a second photosensitive resin composition on the first cured layer (S2).

In the second cured film forming step, a second photosensitive resin composition is applied to the first cured film obtained in step (S1) to a desired thickness, for example, 4 µm to 8 µm, and then cured to form a solvent. By removing, a second cured film can be formed.

When forming the second cured film, curing may be performed at 70° C. to 140° C. for 100 seconds to 800 seconds. The curing may be performed at one time or may be divided two or more times to be cured.

Specifically, when the curing is performed at once, 70 to 140 °C for 100 seconds to 800 seconds, specifically 80 to 130 °C for 150 seconds to 600 seconds, more specifically 90 to 130 °C for 150 seconds to Can run for 500 seconds.

When the curing is performed by dividing two or more times, for example, after pre-curing at 70° C. to 100° C. for 50 to 400 seconds, specifically at 70° C. to 90° C. for 100 to 300 seconds, and then 80° C. Curing may be performed at 140° C. for 100 seconds to 500 seconds, specifically at 90° C. to 130° C. for 100 seconds to 300 seconds.

The curing conditions of the first cured film and the second cured film may be the same or may be different.

In the method of manufacturing a structure for a quantum dot partition wall according to an embodiment, the multilayer cured film consisting of two layers can be exposed and developed, and in the case of manufacturing a multilayer cured film having three or more layers, one or more layers are formed on the second cured film. After further forming the cured film, exposure and development may be performed. In this case, the photosensitive resin composition used to manufacture one or more cured films formed on the second cured film may be the same as or different from the photosensitive resin composition used in the first cured film and the second cured film. In addition, the optical density of each cured film may vary according to the composition and content of the photosensitive resin composition used in the first cured film and the second cured film.

A method of manufacturing a structure for a quantum dot partition wall according to an embodiment may include exposing and developing a multilayer cured film including the first cured film and the second cured film to form a pattern, and then curing (S3).

In the step (S3), after interposing a mask of a predetermined shape to form a pattern on the obtained multilayer cured film, active rays of 200 nm to 500 nm may be irradiated. As a light source used for irradiation, a low-pressure mercury lamp, a high-pressure mercury lamp, an ultra-high-pressure mercury lamp, a metal halide lamp, an argon gas laser, etc. may be used, and in some cases, X-rays, electron beams, etc. The exposure amount varies depending on the type, blending amount and dry film thickness of each component of the composition, but may be 500 mJ/cm 2 (at 365 nm wavelength) or less when a high-pressure mercury lamp is used.

Following the exposure step, an alkaline aqueous solution such as sodium carbonate, sodium hydroxide, potassium hydroxide, and tetramethylammonium hydroxide is used as a developer to dissolve and remove unnecessary portions, thereby remaining only the exposed portions to form a pattern. After cooling the image pattern obtained by development to room temperature, it is post-bake in a hot air circulation drying furnace to obtain a desired final pattern.

The exposure may be performed by arranging a mask such that the interval between each pattern is 10 µm to 30 µm and irradiating an actinic ray.

The phenomenon may be performed for 50 seconds to 300 seconds, specifically 100 seconds to 300 seconds.

Curing after the pattern formation, that is, the post-curing is performed at 150°C to 300°C for 10 to 60 minutes, specifically at 180°C to 280°C for 20 to 50 minutes, and more specifically at 200°C to 260°C for 20 minutes To 40 minutes.

According to the method of manufacturing a structure for a quantum dot partition wall of the present invention according to an embodiment, it is possible to form a multilayer pattern having a uniform film thickness suitable for a quantum dot partition wall through a single development process.

The present invention provides a structure for a quantum dot partition wall manufactured by the method of manufacturing a sphere for a quantum dot partition wall according to the above embodiment.

The structure for a quantum dot partition wall according to an embodiment may form a pattern at regular intervals as shown in FIGS. 2 to 4 and may be formed of two or more multilayers.

As shown in FIG. 2, the structure 200 for quantum dot barrier ribs according to an embodiment is a multi-layered multilayer comprising a first cured layer 211 and a second cured layer 212 on the substrate 210. It may be a structure 200 for quantum dot barrier ribs.

Specifically, the quantum dot barrier structure 200 includes a first cured film 211 formed by coating and curing a first photosensitive resin composition on a substrate 210; And a second cured film 212 formed by coating and curing a second photosensitive resin composition on the first cured film 211, a pattern formed by exposure and development and post-cured 2 It may be a layered quantum dot barrier structure 200.

As shown in FIG. 3, the structure 300 for quantum dot barrier ribs according to another embodiment comprises three layers including a first cured film 311, a second cured film 312, and a third cured film 313. It may be a structure 300 for a multi-layered quantum dot partition wall.

Specifically, the quantum dot barrier structure 300 may include a first cured film 311 formed by coating and curing a first photosensitive resin composition on a substrate 310; A second cured film 312 formed by coating and curing a second photosensitive resin composition on the first cured film 311; And a third cured film 313 formed by coating and curing a third photosensitive resin composition on the second cured film 312, and a pattern is formed and cured by exposure and development. It may be a structure for a quantum dot partition wall made of a layer (300).

As shown in FIG. 4, the structure 400 for a quantum dot partition wall according to another embodiment includes a first cured film 411, a second cured film 412, a third cured film 413, and an n-th cured film ( It may be a structure 400 for a quantum dot partition wall made of n layers including nn).

Specifically, the quantum dot barrier structure 400 includes a first cured film 411 formed by coating and curing a first photosensitive resin composition on a substrate 410; A second cured film 412 formed by coating and curing a second photosensitive resin composition on the first cured film 411; A third cured film 413 formed by coating and curing a third photosensitive resin composition on the second cured film 412; And an n-th cured film (nn) formed by coating and curing the n-th photosensitive resin composition on the third cured film 413. A multi-layer cured film comprising an n-th cured layer formed by exposure and development It may be a structure 400 for quantum dot barrier ribs. In this case, n may be 4 or more, specifically 4 to 10, 4 to 8, 4 to 6, or 4 to 5.

In the structure for the quantum dot partition wall, the thickness and optical density of each cured film may be the same or may be different.

The quantum dot barrier structure may have an optical density of 0.05/㎛ to 2.0/㎛, 0.05/㎛ to 1.5/㎛, 0.05/㎛ to 1.0/㎛, 0.05/㎛ to 0.5/㎛ or 0.1/㎛ to 0.2/㎛ have. At this time, the optical density is a unit optical density calculated based on a thickness of 1 μm after measuring the transmittance at 550 nm using an optical density meter (361T, Xlite). From this, the structure for the quantum dot partition wall may have a total optical density of 0.5 to 10.0, 1.0 to 6.0, or 1.0 to 4.0. The total optical density is a value obtained by multiplying the unit optical density by the total thickness of a structure for a quantum dot partition wall.

When the optical density and the total optical density are within the above ranges, the resolution of the display screen may be further improved.

The cured film of the structure for the quantum dot partition wall uses an α-step profilometer, SCAN PLUS, to measure the height deviation through the vertical motion of the probe tip of the equipment, and this can be evaluated as the thickness of the cured film. , The final film thickness of the optical density is a measurement of the final film of the structure for quantum dot barrier ribs obtained by exposure and development to form a pattern and then post-curing, and includes the entire multilayer cured film, and the final film thickness is 6 μm to It may be 20 μm.

In addition, the following respective structures for the quantum dot bulkhead reflectance R _SCE as measured by a 360 nm to 740 nm, or 550 nm the reflectivity R _SCI and SCE (Specular Component Excluded) measured by the SCI (Specular Component Included) method at the wavelength of the method Can satisfy the expression:

(Equation 1) R _SCI ≤ 5.0%

(Equation 2) R _SCE ≤ 0.5%

(Equation 3) 2 ≤ R _SCE / R _SCI ≤ 10.

Specifically, R _SCI may be 5.0% or less, 4.8% or less, 4.6% or less, 4.0% to 4.8%, or 4.0% to 4.6%, and R _SCE is 0.5% or less, 0.4% or less, 0.1% to 0.5% , 0.1% to 0.4% or 0.2% to 0.4%, and the ratio (R _SCE / R _SCI ) between them is 2 to 10, 2 to 9, 2 to 8, 3 to 8, 4 to 8 or 4 to 7.5 Since it may be, it is possible to satisfy the characteristics of low reflectance and high light-shielding property, and prevent light bleeding such as red or green.

The structure for quantum dot barrier ribs manufactured as described above can be usefully used for quantum dot displays due to its excellent physical properties.

Hereinafter, the present invention will be described in more detail by the following examples. However, the following examples are for illustrative purposes only, and the scope of the present invention is not limited thereto.

The weight average molecular weight described in the following Synthesis Examples is a polystyrene conversion value measured by gel permeation chromatography (GPC).

Synthesis Example 1: Preparation of Copolymer (A-1)

In a 500 ml round bottom flask equipped with a reflux condenser and a stirrer, 50 mol% of N-phenylmaleimide (PMI), 6 mol% of styrene (Sty), and 4-hydroxybutylacrylate glycidyl ether (4-HBAGE) 100 g of a mixture of 10 mol% and 34 mol% (meth)acrylic acid (MAA), 300 g of propylene glycol monomethyl ether acetate (PGMEA) as a solvent, and 2,2'-azobis (2,4-dimethyl) as a radical polymerization initiator Valeronitrile) 2 g were added. Then, the mixture was raised to 70° C. and stirred for 5 hours to obtain a solution of the copolymer (A-1) having a solid content of 31% by weight. The acid value of the resulting copolymer was 100 mgKOH/g, and the weight average molecular weight (Mw) in terms of polystyrene measured by gel permeation chromatography was 7,000 Da.

Synthesis Example 2: Preparation of Copolymer (A-2)

In a 250 ml round bottom flask equipped with a reflux condenser and a stirrer, 30 mol% of methyl (meth)acrylate, 20 mol% of (meth)acrylic acid, 30 mol% of hexafluoroisopropyl (meth)acrylate, and butyl (meth) A mixture obtained by dissolving 30 g of a monomer mixture having a molar ratio of 20 mol% of acrylate and 2.74 g of V-59 as a radical polymerization initiator in 30 g of propylene glycol methyl ether acetate (PGMEA) as a solvent was heated to 80° C. in a nitrogen atmosphere. It was added dropwise to the contained flask for 4 hours and then polymerized for 20 hours to obtain a copolymer (A-2). The acid value of the resulting copolymer was 85 mgKOH/g, the converted weight average molecular weight (Mw) measured by gel permeation chromatography was 9,053 Da, the solid content was 30.5% by weight, and the polydispersity (Mw/Mn) was It was 2.3.

Synthesis Example 3: Preparation of Copolymer (A-3)

In a 250 ml round bottom flask equipped with a reflux condenser and a stirrer, 30 mol% of methyl (meth)acrylate, 20 mol% of (meth)acrylic acid, 30 mol% of octafluoropentyl (meth)acrylate, and butyl (meth)acrylic A solvent obtained by dissolving 30 g of a monomer mixture having a molar ratio of 20 mol% and 2.74 g of V-59 as a radical polymerization initiator in 30 g of propylene glycol methyl ether acetate (PGMEA) as a solvent was heated to 80 °C under a nitrogen atmosphere. It was added dropwise to the present flask for 4 hours and then polymerized for 20 hours to obtain a copolymer (A-3). The acid value of the resulting copolymer was 66 mgKOH/g, the converted weight average molecular weight (Mw) measured by gel permeation chromatography was 14,968 Da, the solid content was 31.2% by weight, and the polydispersity (Mw/Mn) was It was 2.3.

Synthesis Example 4: Preparation of Copolymer (A-4)

In a 250 ml round bottom flask equipped with a reflux condenser and a stirrer, 30 mol% of methyl (meth)acrylate, 20 mol% of (meth)acrylic acid, 30 mol% of trifluoroethyl (meth)acrylate, and butyl (meth)acrylic A solvent in which 30 g of a monomer mixture having a molar ratio of 20 mol% of the rate and 2.74 g of V-59 as a radical polymerization initiator was dissolved in 30 g of propylene glycol methyl ether acetate (PGMEA) as a solvent was heated to 80 °C under a nitrogen atmosphere. It was added dropwise to the flask for 4 hours and then polymerized for 20 hours to obtain a copolymer (A-4). The acid value of the resulting copolymer was 98 mgKOH/g, the converted weight average molecular weight (Mw) measured by gel permeation chromatography was 7,551 Da, the solid content was 31.6% by weight, and the polydispersity (Mw/Mn) was It was 2.04.

Constituent units used in the preparation of the copolymers of Synthesis Examples 1 to 4 and their contents are shown in Table 1 below.

Preparation Example: Preparation of photosensitive resin composition

The photosensitive resin composition of the following Preparation Example was prepared using the copolymers prepared in Synthesis Example.

Information on the components used in the following Preparation Examples are shown in Table 2 below.

Manufacturing example

<Production of photosensitive resin composition>

Production Example 1-1: First photosensitive resin composition

As a copolymer, 100 parts by weight of the copolymer (A-1) obtained in Synthesis Example 1 (solid content), a 6-functional dipentaerythritol hexaacrylate (DPHA) (B-1, Nippon Kayaku) as a photopolymerizable compound (B) ) 40 parts by weight, 4 functional di(trimethylolpropane) tetraacrylate (B-2, brand name T-1420, Nippon Kayaku) 40 parts by weight, as photopolymerization initiator (C), which is oxime photoinitiator 1 (C-1) 2.0 parts by weight of N-1919, 1.0 parts by weight of SPI-03, which is an oxime photoinitiator 2 (C-2), and (E)-2-(4-styrylphenyl)-4, which is a triazine photoinitiator 3 (C-3) ,6-bis(trichloromethyl)-1,3,5-triazine 0.4 parts by weight, BK-7539 (TOKUSHIKI Co., LTD) 5.1 parts by weight as a black organic colorant (D-2), surfactant (E) As, 0.2 parts by weight of F563 (DIC) and 0.5 parts by weight of an epoxy curing agent (F-1) MIPHOTO GHP03HHP (Miwon) as an additive were uniformly mixed. Propylene glycol monomethyl ether acetate (PGMEA) (G-1) was added as a solvent so that the solid content of the mixture was 25% by weight, and then mixed for 2 hours using a shaker to obtain a liquid photosensitive resin composition.

Preparation Example 1-2: Second photosensitive resin composition

0.6 parts by weight of SPI-03, which is an oxime photoinitiator 2 (C-2) as a photoinitiator (C), and (E)-2-(4-styrylphenyl)-4,6, which is a triazine photoinitiator 3 (C-3) -Bis(trichloromethyl)-1,3,5-triazine 0.4 parts by weight is used, BK-7539 (TOKUSHIKI Co., LTD) 9.5 parts by weight is used as the organic colorant (D-2), and no additives are added. After uniformly mixing, the mixture of propylene glycol monomethyl ether acetate (PGMEA) (G-1) and 3-methoxybutyl acetate (3BMA) (G-2) as solvents so that the solid content of the mixture is 25% by weight. A photosensitive resin composition was obtained in the same manner as in Preparation Example 1-1, except that the mixture was used.

Preparation Examples 2-1 to 25-2

A photosensitive resin composition was obtained in the same manner as in Preparation Example 1-1, except that the kind and/or content of each component was changed as described in Table 3 below.

<Manufacture of structure for quantum dot bulkhead>

Example 1

The photosensitive resin composition prepared in Preparation Example 1-1 was applied as a first photosensitive resin composition on a glass substrate dipped in distilled water and dried using a spin coater, and pre-cured at 90° C. for 150 seconds to obtain 6.0 A coating film having a thickness of µm or more was formed. This coating film was further mid-bake at 130° C. for 300 seconds to remove the solvent to form a first cured film (lower film).

As a second photosensitive resin composition, a second cured film having a thickness of 6.0 µm or more was applied on the first cured film by using the photosensitive resin composition prepared in Preparation Example 1-2, and precured at 90° C. for 150 seconds ( Upper film) was formed to obtain a two-layer multilayer cured film.

Thereafter, a contact method was applied to the multilayer cured film to minimize the gap with the substrate by using a mask manufactured to allow 100% exposure on a 5 cm horizontal and 5 cm vertical portion. Thereafter, using an aligner (model name MA6) emitting a wavelength of 200 nm to 450 nm, after exposure to 150 mJ/cm 2 based on 365 nm for a certain period of time, potassium hydroxide was diluted to 0.04% by weight in an aqueous solution. It was developed at 23° C. until the unexposed part was completely washed away. The formed pattern was post-cured in an oven at 230° C. for 30 minutes to obtain a structure for quantum dot barrier ribs.

Examples 2 to 13

Using the first photosensitive resin composition and the second photosensitive resin composition (Production Examples 2-1 to 13-2) having the components and contents described in Table 3, and varying the development time and film thickness in Tables 4 and 6 Except that, a structure for a quantum dot partition wall including a multilayer cured film was manufactured in the same manner as in Example 1.

Comparative Examples 1 to 11

After forming the first cured film using the photosensitive resin composition (Preparation Examples 14 to 24) having the components and contents described in Table 3, by varying the development time and film thickness in Tables 4 and 6 to obtain a single-layer cured film Except, a structure for a quantum dot partition wall including a single-layer cured film was manufactured in the same manner as in Example 1.

Comparative Example 12

Using the first photosensitive resin composition (Preparation Example 25-1) and the second photosensitive resin composition (Preparation Example 25-2) having the components and contents described in Table 3, and the development time and film thickness in Tables 4 and 6 A structure for a quantum dot partition wall including a multilayer cured film was manufactured in the same manner as in Example 1, except for the difference.

Evaluation Example 1. Development time

When the non-exposed part is completely washed out at 23°C with an aqueous solution in which potassium hydroxide is diluted to 0.04% by weight during the manufacturing process of the cured film of the structure for quantum dot barriers of the examples and comparative examples (the stage O-ring part of the developing equipment is completely visible from the back of the substrate. Time) was measured.

- If the development time is less than 300 seconds ○, if it exceeds 300 seconds, it is evaluated as Ⅹ

Evaluation Example 2. Resolution and critical dimension of line pattern (line CD evaluation)

In order to measure the resolution of the pattern and the critical dimension of the line pattern (CD, critical dimension: line width, unit: µm) for the cured film of the structure for quantum dot partition walls of Examples and Comparative Examples, a micro-optical microscope (STM6-LM, manufacturer OLYMPUS) and Line CD was measured in µm units using an X-scanning electron microscope (SEM, s canning electron microscopy , S4300), and the results are shown in FIGS. 5 and 6.

In addition, the size of the 13 μm line pattern of the photomask was observed to measure the resolution. In other words, The pattern size of the cured line pattern patterned with 13 µm under the optimal exposure condition (150 mJ/cm 2) was measured. The smaller the number, the better the resolution because it is possible to implement a small pattern.

- If the resolution is more than 0 to less than 20 ㎛ ○, if the resolution is more than 20 ㎛ or 0, it is evaluated as Ⅹ

Evaluation Example 3. Thickness of the cured film before and after post-curing

The cured film of the structure for quantum dot bulkheads of Examples and Comparative Examples was measured for height deviation through vertical motion of the device probe tip using an α-step profilometer, SCAN PLUS, and the thickness of the cured film Evaluated as.

The initial film thickness is the measurement of the film produced after pre-curing before the exposure and development steps in the manufacture of the structure for the quantum dot barrier (film thickness before post-curing).

The final film thickness was measured by measuring the final film of the structure for the quantum dot partition wall formed after post-curing after exposure and development during manufacturing the structure for the quantum dot partition wall to form a pattern (film thickness after post-curing).

- If the initial film thickness and the final film thickness are each multi-layer, it is evaluated as ○, and in case of a single layer, it is evaluated as X

Evaluation Example 4. Optical density

The transmittance at 550 nm was measured using an optical density meter (361T, Xlite) for the cured film of the structure for quantum dot barrier ribs of Examples and Comparative Examples, and optical density (OD, unit:) for a thickness of 1 μm. /㎛) and the optical density for the final film thickness were calculated. The total optical density is a value obtained by multiplying the optical density for a thickness of 1 μm by the final film thickness. When the film fell off after post-curing (Comparative Examples 11 and 12), the total optical density was calculated based on the thickness before post-curing.

Total optical density = Optical density for 1 μm thickness (/ μm) X final film thickness (μm)

Evaluation Example 5. Reflectance

R _SCI and R _SCE at 550 nm wavelength were measured using a photoelectric spectrophotometer (CM-3700A) of the cured film of the structure for quantum dot partition walls of Examples and Comparative Examples, and the ratio between these reflectances (R _SCE / R _SCI ) Was calculated.

_-If R _SCI is less than 5.0% ○, if it exceeds 5.0%, it is evaluated as Ⅹ

_-If R _SCE is less than 0.5% ○, if it exceeds 0.5%, it is evaluated as Ⅹ

_-If R _SCE /R _SCI is 2 to 10, it is evaluated as Ⅹ if it is less than 2 or more than 10.

Evaluation Example 6. Contact angle

The contact angle of the cured film of the structure for quantum dot barrier ribs of Examples and Comparative Examples was measured using 2-ethoxy ethanol as a polar solvent using a contact angle measurement (DM300, Kyowa).

-In the case of a cured film not containing a fluorine-containing copolymer, it was found to be 0°, and the cured film containing a fluorine-containing copolymer was found to have a contact angle of 10° to 20°.

The results of the evaluation examples are shown in Tables 4 to 7 below.

Looking at the results of Tables 4 to 7, all the structures for quantum dot partition walls of Examples 1 to 13 prepared from the multilayer cured film using the photosensitive resin composition of Preparation Examples 1-1 to 13-2 have a total thickness of 6 μm to 20 By satisfying the range of µm, it was possible to form a sufficient thickness to be used for the quantum dot partition wall. When the multilayer cured film satisfying the thickness in the above range is used as the quantum dot partition wall, it is possible to prevent the composition of each color from being mixed and deteriorating the resolution since the quantum dot solution does not overflow when the quantum dot solution is dropped.

In addition, the structure for quantum dot barrier ribs of Examples 1 to 13 exhibited 5% or less R _SCI and 0.5% or less R _SCE , and satisfies R _SCE / R _SCI FIGS. 2 to 10 to satisfy low reflectance characteristics. Confirmed. In addition, it was confirmed that the total optical density with respect to the maximum total film thickness after post-curing falls within the scope of the present invention, and thus high light-shielding properties can be realized, and the resolution is at the level of 12 µm to 16 µm.

On the other hand, the structures for quantum dot partition walls of Comparative Examples 1 to 11 prepared from a single-layer cured film using the compositions of Preparation Examples 14 to 24 had a final film thickness of 3 μm to less than 6 μm. When a structure having such a thickness range is used as a quantum dot partition wall, a quantum dot solution may overflow the partition wall, making color distinction difficult and easy to be contaminated, and thus resolution may be degraded.

In particular, the structure for quantum dot barrier ribs of Comparative Examples 3 and 4 had a total optical density of 0.7 and low light blocking, R _SCI exceeded 5%, R _SCE exceeded 0.5%, and R _SCE / R _SCI FIG. 10 Since it exhibited a high reflectance compared to the structure for quantum dot barrier ribs of Examples 1 to 13, it was not possible to achieve the low reflectance and high light-shielding properties desired in the present invention.

Meanwhile, cross-sections and side surfaces of structures for quantum dot barrier ribs of Examples 1 to 13 and Comparative Examples 1 to 12 of FIGS. 5 and 6 are measured with an optical microscope.

As can be seen in FIG. 5, the cured films of the structures for quantum dot barrier ribs of Examples 1 to 13 were observed to have clear and distinct line widths, and uniform and thick film thickness.

On the other hand, as can be seen in Figure 6, it can be confirmed that the cured film of the structure for quantum dot partition wall prepared in Comparative Examples 1 to 12 is not suitable for the quantum dot partition wall because the thickness is thin, especially in the case of Comparative Examples 11 and 12 It can be seen that the pattern is not formed or is not clear due to the dropout. In particular, the structure for quantum dot barrier ribs of Comparative Example 12 was manufactured as a multilayer cured film, but the color content was high, so the film was removed due to the lack of photocurability under the optimal exposure condition (150 mJ/㎠), and the resolution was 0 µm. It was confirmed that the pattern was not clear,

100: substrate structure
110: transparent substrate 120: partition
130: first quantum dot solution 140: second quantum dot solution 150: third quantum dot solution
200, 300, 400: structure for quantum dot bulkhead
210, 310, 410: substrate
211, 311, 411: first cured film
212, 312, 412: second cured film
313, 413: third cured film
nn: nth cured film

Claims (20)

(A) copolymer;
(B) photopolymerizable compounds;
(C) photoinitiator; And
As a structure for quantum dot partition walls comprising a cured film formed from a photosensitive resin composition containing (D) a colorant containing a black colorant,
The quantum dot barrier structure has a total thickness of 6 µm or more and an optical density of 0.05/µm to 2.0/µm,
The reflectance R measured by the SCI (Specular Component Included) method at a wavelength of 550 nm R The reflectance measured by the _SCI and the SCE (Specular Component Excluded) method R _SCE satisfies the following equation, respectively, a structure for a quantum dot partition wall:
(Equation 1) R _SCI ≤ 5.0%
(Equation 2) R _SCE ≤ 0.5%
(Equation 3) 2 ≤ R _SCE / R _SCI ≤ 10. The method of claim 1,
The black colorant comprises at least one selected from the group consisting of a black organic colorant and a black inorganic colorant. The method of claim 2,
The black organic colorant is included in an amount of 3 to 40 parts by weight based on 100 parts by weight of the copolymer (A), a structure for a quantum dot partition wall. The method of claim 2,
The black inorganic colorant is contained in an amount of 0.01 to 10 parts by weight based on 100 parts by weight of the copolymer (A), quantum dot barrier structure. The method of claim 1,
The colorant (D) further comprises a colorant comprising at least one selected from the group consisting of a blue colorant and a purple colorant, a structure for a quantum dot partition wall. The method of claim 5,
The blue colorant and the purple colorant are contained in an amount of 0.01 to 10 parts by weight, respectively, based on 100 parts by weight of the copolymer (A), a structure for a quantum dot partition wall. The method of claim 1,
The colorant (D) is contained in an amount of 1 to 40 parts by weight based on 100 parts by weight of the copolymer (A), a structure for a quantum dot partition wall. The method of claim 1,
The photosensitive resin composition further comprises at least one selected from the group consisting of an epoxy compound, a photobase generator, a thiol-based compound, and a compound derived from an epoxy resin. A first cured film formed from a first photosensitive resin composition and a second cured film formed from a second photosensitive resin composition on the first cured film,
The first photosensitive resin composition, the second photosensitive resin composition, or both of them (A) a copolymer; (B) photopolymerizable compounds; (C) photoinitiator; And (D) a colorant comprising a black colorant; contains,
A structure for quantum dot bulkheads with a total thickness of 6 µm or more. The method of claim 9,
The thickness of each of the first cured film and the second cured film is 10 μm or less, a structure for a quantum dot partition wall. The method of claim 9,
The multilayer cured film has a total thickness of 6 µm to 20 µm, a structure for quantum dot barrier ribs. The method of claim 9,
The structure for the quantum dot partition wall has an optical density of 0.05 / ㎛ to 2.0 / ㎛, the structure for the quantum dot partition wall. Applying and curing the first photosensitive resin composition on a substrate to form a first cured film,
Applying and curing a second photosensitive resin composition on the first cured film to form a second cured film; And
Exposing and developing a multilayer cured film including the first cured film and the second cured film to form a pattern, and then curing,
The first photosensitive resin composition, the second photosensitive resin composition, or both of them (A) a copolymer; (B) photopolymerizable compounds; (C) photoinitiator; And (D) a colorant comprising a black colorant; containing, a method for producing a structure for a quantum dot partition wall. The method of claim 13,
When the first cured film and the second cured film are formed, curing is performed at 70 to 140° C. for 100 seconds to 800 seconds, respectively. The method of claim 14,
When the first cured film and the second cured film are formed, curing is pre-cured at 70 to 100° C. for 50 seconds to 400 seconds, and then cured at 80 to 140° C. for 100 seconds to 500 seconds, quantum dots Method of manufacturing a structure for bulkheads. The method of claim 13,
After the pattern is formed, the curing is performed at 150° C. to 300° C. for 10 to 60 minutes. A method of manufacturing a structure for a quantum dot partition wall. The method of claim 13,
A method of manufacturing a structure for a quantum dot partition wall, wherein the exposure is performed by arranging a mask such that an interval between each pattern is 10 µm to 30 µm and irradiating an active line. The method of claim 13,
The above phenomenon is made for 50 seconds to 300 seconds, a method of manufacturing a structure for a quantum dot partition wall. The method of claim 13,
A method of manufacturing a structure for a quantum dot partition wall, further forming at least one cured film on the second cured film. The method of claim 19,
In the multilayer cured film, the thickness of each cured film is 8 μm or less,
The total thickness of the multi-layer cured film is 6 ㎛ to 20 ㎛, the method of manufacturing a structure for quantum dot barrier ribs.

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